Blanking aperture array system and multi-charged particle beam lithography system

Abstract

To suppress an operation failure of a circuit element by a scattered electron and a bremsstrahlung X-ray.SOLUTION: A blanking aperture array system comprises: a blanking aperture array substrate in which a plurality of beam passage holes passing to which each beam of a multi electric charge beam passes to a downstream side from an upstream side is formed, a blanker is provided in accordance with each beam passage hole; and an X-ray shield that is arranged to the upstream side of the blanking aperture array substrate, and an open that the multi electric charge particle beam passes is formed at a center part. A cell part containing the beam passage hole and the blanker is provided to the center part of the blanking aperture array substrate, and a circuit part containing a circuit element applying a voltage to the blanker is arranged to a peripheral edge of the cell part. The circuit part is arranged so that the shortest distance with an end of a beam passage hole of the outermost peripheral side of the plurality of beam passage holes becomes a distance or larger based a scattering level of an electron in the blanking aperture array substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a blanking aperture array system and a multi-charged particle beam lithography apparatus. [Background technology]

[0002] With the increasing integration of semiconductor integrated circuits (LSIs), the design dimensions of semiconductor devices (MOSFETs: metal-oxide-semiconductor field-effect transistors) continue to be miniaturized in accordance with Moore's Law. Lithography, which is responsible for this miniaturization, is an extremely important technology for generating patterns in the semiconductor manufacturing process. To form the desired circuit pattern of an LSI on a wafer, the mainstream method is to use a reduction projection exposure system to reduce and transfer a high-precision original pattern (mask, or reticle, especially in the case of steppers and scanners) formed on quartz to a resist (photosensitive resin) coated on the wafer. Currently, EUV scanners using extreme ultraviolet (EUV) light sources are also being employed in the formation of state-of-the-art fine patterns. In EUV exposure, an EUV mask is used, which is patterned by a multilayer film that reflects EUV on quartz and an absorber formed on top of it. Both masks are manufactured using electron beam lithography equipment, which applies electron beams that inherently have excellent resolution.

[0003] Multibeam lithography systems can significantly improve throughput compared to single-beam systems because they can irradiate many beams at once. In a multibeam lithography system using a blanking aperture array substrate, for example, an electron beam emitted from a single electron source is passed through a molded aperture array substrate with multiple apertures to form multiple beams. The multiple beams pass through their respective blankers in the blanking aperture array substrate. The blanking aperture array substrate has electrode pairs (blankers) for individually deflecting the beams and apertures for beam passage between them. By fixing one electrode pair at ground potential and switching the other between ground potential and other potentials, the passing electron beams are individually blanked. The electron beams deflected by the blankers are shielded by limiting apertures, and the undeflected electron beams are irradiated onto the sample. The blanking aperture array substrate is equipped with circuits for independently controlling the electrode potential of each blanker.

[0004] When an electron beam is irradiated onto a molded aperture array substrate with apertures for forming a multi-beam, bremsstrahlung X-rays are generated. Furthermore, when forming a multi-beam on the molded aperture array substrate, some of the electron beam is scattered at the edges of the apertures, becoming scattered electrons. If these bremsstrahlung X-rays and scattered electrons irradiate a blanking aperture array substrate, the electrical characteristics of MOSFETs included in the circuit elements may deteriorate due to the total ionizing dose (TID) effect, potentially causing malfunctions in the circuit elements. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2013-093566 [Patent Document 2] Japanese Patent Application Publication No. 11-317357 [Patent Document 3] Japanese Patent Publication No. 2017-079259 [Overview of the project] [Problems that the invention aims to solve]

[0006] The present invention aims to provide a blanking aperture array system and a multi-charged particle beam lithography apparatus that suppress malfunctions of circuit elements caused by scattered electrons and bremsstrahlung X-rays. [Means for solving the problem]

[0007] A blanking aperture array system according to one aspect of the present invention comprises a blanking aperture array substrate having a plurality of beam passage holes formed therein through which each beam of a multi-charged particle beam passes from upstream to downstream, and a blanker for blanking the beams corresponding to each beam passage hole, and an X-ray shield disposed upstream of the blanking aperture array substrate and having an opening formed in the center through which the multi-charged particle beam passes, wherein the cell portion including the beam passage holes and the blankers is provided in the center of the blanking aperture array substrate, and a circuit portion including circuit elements for applying voltage to each blanker is disposed around the periphery of the cell portion, and the circuit portion is arranged such that the shortest distance from the edge of the outermost beam passage hole among the plurality of beam passage holes is greater than or equal to the distance based on the range of electrons within the blanking aperture array substrate.

[0008] A multi-charged particle beam lithography apparatus according to an aspect of the present invention includes a charged particle beam source that emits a charged particle beam, a shaping aperture array substrate having a plurality of first apertures formed therein, and a part of the charged particle beam passing through the plurality of first apertures from the upstream side to the downstream side to form a multi-charged particle beam, a blanking aperture array substrate having a plurality of beam passage holes formed therein through which each beam of the multi-charged particle beam passes from the upstream side to the downstream side, and a blanker for performing blanking deflection of each beam provided corresponding to each beam passage hole, an X-ray shield disposed on the upstream side or the downstream side of the blanking aperture array substrate and having a second aperture formed at the center through which the multi-charged particle beam passes. A cell unit including the beam passage holes and the blankers is provided at the center of the blanking aperture array substrate, and a circuit unit including circuit elements for applying voltages to the blankers is disposed on the periphery of the cell unit. The circuit unit is such that the shortest distance from the end of the outermost peripheral beam passage hole among the plurality of beam passage holes is not less than a distance based on the flight range of scattered electrons in the blanking aperture array substrate.

Advantages of the Invention

[0009] According to the present invention, it is possible to suppress the circuit elements on the blanking aperture array substrate from malfunctioning due to scattered electrons or bremsstrahlung X-rays.

Brief Description of the Drawings

[0010] [Figure 1] It is a schematic diagram of a multi-charged particle beam lithography apparatus according to an embodiment of the present invention. [Figure 2] It is a plan view of a shaping aperture array substrate. [Figure 3] It is a schematic configuration diagram of a blanking aperture array system. [Figure 4] It is a plan view of a blanking aperture array substrate. [Figure 5] It is a partially enlarged view of a blanking aperture array system. [Figure 6]It is a partially enlarged view of a blanking aperture array system. [Figure 7] It is a partially enlarged view of a blanking aperture array system. [Figure 8] It is a schematic configuration of a shaping aperture array substrate according to a modification example. [Figure 9] It is a schematic configuration diagram of a blanking aperture array system according to a modification example. [Figure 10] It is a schematic configuration diagram of a blanking aperture array system according to a modification example. [Figure 11] It is a schematic configuration diagram of a blanking aperture array system according to a modification example.

Mode for Carrying Out the Invention

[0011] Hereinafter, embodiments of the present invention will be described based on the drawings. In the embodiments, as an example of a charged particle beam, a configuration using an electron beam will be described. However, the charged particle beam is not limited to an electron beam, and an ion beam or the like may also be used.

[0012] FIG. 1 is a schematic configuration diagram of a drawing apparatus according to an embodiment. The drawing apparatus 100 shown in FIG. 1 is an example of a multi-charged particle beam drawing apparatus. The drawing apparatus 100 includes an electron column 102 and a drawing chamber 103. In the electron column 102, an electron source 111, an illumination lens 112, a shaping aperture array substrate 10, a blanking aperture array system 1, a reduction lens 115, a limiting aperture member 116, a projection lens 117, and a deflector 118 are arranged.

[0013] The blanking aperture array system 1 has a blanking aperture array substrate 30, a mounting substrate 40, and an X-ray shield 50. The blanking aperture array substrate 30 is mounted on the back surface side (lower surface side) of the mounting substrate 40. In the present embodiment, the upstream side in the traveling direction of the electron beam (multi-beam MB) is referred to as the front surface side or the upper surface side, and the downstream side in the traveling direction is referred to as the back surface side or the lower surface side.

[0014] The X-ray shield 50 is placed between the mounting substrate 40 and the blanking aperture array substrate 30. The X-ray absorption rate of the X-ray shield plate 0 increases as its atomic number increases. Therefore, it is preferable that the X-ray shield 50 is made of a heavy metal, such as tungsten, gold, tantalum, or lead.

[0015] Apertures 42 and 52 are formed in the center of the mounting substrate 40 and the X-ray shield 50, respectively, for the passage of the electron beam (multi-beam MB). The aperture 52 of the X-ray shield 50 and the aperture 42 of the mounting substrate 40 are aligned.

[0016] An XY stage 105 is placed inside the drawing chamber 103. On the XY stage 105 are samples 101, such as mask blanks coated with resist and not yet drawn on, which will be the substrates to be drawn on during drawing. Samples 101 may also include exposure masks used in the manufacturing of semiconductor devices, or semiconductor substrates (silicon wafers) on which semiconductor devices are manufactured.

[0017] As shown in Figure 2, the molded aperture array substrate 10 has m rows x n rows (m, n ≥ 2) of apertures 12 formed at a predetermined arrangement pitch. Each aperture 12 is formed as a rectangle of the same dimensions and shape. The shape of the apertures 12 may also be circular. A multi-beam MB is formed when a portion of the electron beam B passes through each of these multiple apertures 12.

[0018] As shown in Figure 3, the blanking aperture array substrate 30 has through holes 32 formed in it, corresponding to the positions of each aperture 12 of the molded aperture array substrate 10, allowing each multi-beam MB to pass through. A blanker 34, consisting of a pair of electrodes, is placed in each through hole 32. One electrode of the blanker 34 is fixed at ground potential, and the other is switched to a potential other than ground potential. The electron beam passing through each through hole 32 is independently deflected by the voltage (electric field) applied to the blanker 34.

[0019] In this way, multiple blankers 34 perform blanking deflection of the corresponding beams among the multi-beam MBs that have passed through multiple apertures 12 of the molded aperture array substrate 10.

[0020] As shown in Figure 4, multiple blankers 34 are provided in the central cell portion C of the blanking aperture array substrate 30. Furthermore, a circuit portion 36, including an LSI circuit for controlling voltage application to the blankers 34, is formed outside (towards the periphery) of the blanking aperture array substrate 30, relative to the cell portion C.

[0021] The circuit section 36 has a MOSFET and the like, is connected to the mounting board 40 by wire bonding, generates a signal corresponding to data transferred from the outside, and applies a voltage to the blanker 34 via wiring (not shown) arranged in the blanking aperture array board 30.

[0022] The cell section C is aligned with the aperture 52 of the X-ray shield 50 and the aperture 42 of the mounting substrate 40.

[0023] The electron beam B emitted from the electron source 111 (emitting section) illuminates the entire molded aperture array substrate 10 almost vertically by the illumination lens 112. Multiple electron beams (multi-beam MB) are formed as the electron beam B passes through multiple apertures 12 in the molded aperture array substrate 10. The multi-beam MB passes through the aperture 42 of the mounting substrate 40 and the aperture 52 of the X-ray shield 50, and then through the corresponding through holes 32 in the cell section C of the blanking aperture array substrate 30.

[0024] The multi-beam MB that has passed through the blanking aperture array substrate 30 is reduced by the reduction lens 115 and moves toward the central aperture of the limiting aperture member 116. Here, the electron beam that has been slightly deflected by the blanker 34 is moved away from the central aperture of the limiting aperture member 116 and is shielded by the limiting aperture member 116. On the other hand, the electron beam that has not been deflected by the blanker 34 passes through the central aperture of the limiting aperture member 116. Beam blanking control is performed by controlling the electric field by applying a voltage to the blanker 34, i.e., by on / off operation, and the on / off state of each beam on the sample 101 is controlled.

[0025] In this way, the limiting aperture member 116 shields each beam that has been deflected by the multiple blankers 34 to the beam-off state. The time from when the beam turns on to when it turns off becomes the exposure time for one beam irradiation of the resist on the sample 101.

[0026] The multi-beams that have passed through the limiting aperture member 116 are focused onto the sample 101 by the projection lens 117, and the shape of the aperture 12 of the molded aperture array substrate 10 (image of the object surface) is projected onto the sample 101 (image surface) at a desired reduction ratio. The entire multi-beam is deflected in the same direction by the deflector 118 and irradiated to the respective irradiation positions on the sample 101 for each beam. When the XY stage 105 is moving continuously, the deflector 118 controls the beam irradiation positions so that they follow the movement of the XY stage 105.

[0027] Here, when forming a multi-beam MB on the molded aperture array substrate 10, a portion of the electron beam B is scattered at the edge of the aperture 12, becoming scattered electrons, and another portion is reflected by the sidewall of the aperture (through hole), becoming backscattered electrons (hereinafter, both backscattered and scattered electrons will be referred to as scattered electrons or simply electrons). These scattered electrons enter the interior of the blanking aperture array substrate 30 from the edge of the through hole 32, travel while losing energy, and stop. The straight-line distance from the point of incidence to the point of stopping at this time is the electron's range d. elcThis is the result. At this time, bremsstrahlung X-rays and characteristic X-rays (hereinafter collectively referred to as bremsstrahlung X-rays or simply X-rays) are generated within the blanking aperture array substrate 30, but the damage (effect) that scattered electrons directly inflict on the transistor due to the TID effect is about 5 to 6 orders of magnitude greater than that of bremsstrahlung X-rays.

[0028] Therefore, in this embodiment, as shown in Figure 5, the retraction distance of the circuit portion 36 from the end of the through hole 32 is set to the electron range d elc That concludes this section.

[0029] On the other hand, when electron beam B is irradiated onto the molded aperture array substrate 10, bremsstrahlung X-rays are similarly generated. Some of these bremsstrahlung X-rays are absorbed and attenuated by the X-ray shield 50. Furthermore, photoelectrons generated when bremsstrahlung X-rays generated on the molded aperture array substrate 10 irradiate the blanking aperture array substrate 30 behave similarly to the scattered electrons described above.

[0030] When scattered electrons, including X-rays and photoelectrons, that were not absorbed by the X-ray shield 50 irradiate the circuit portion 36 of the blanking aperture array substrate 30, the electrical characteristics of the transistor may deteriorate due to the TID effect, potentially causing malfunction.

[0031] Therefore, in this embodiment, as shown in Figure 6, the circuit portion 36 of the blanking aperture array substrate 30 is positioned to be moved outward (towards the periphery) from the end (aperture end 52a) of the aperture 52 of the X-ray shield 50, thereby suppressing the effects of bremsstrahlung X-rays and scattered electrons including photoelectrons.

[0032] The X-rays travel almost linearly through the blanking aperture array substrate 30, generating photoelectrons and stopping (photoelectric effect). Therefore, the distance (retraction distance d) between the aperture end 52a and the circuit section 36. evc ) is the distance d that the X-rays penetrate (invade), as shown in equation (1) below. x and the electron's range d elcIt is preferably larger than the sum with. Thereby, even when X-rays enter the blanking aperture array substrate 30 and these X-rays generate photoelectrons within the blanking aperture array substrate 30, the influence on the circuit portion 36 can be suppressed. d evc >d x +d elc ···(1)

[0033] The distance d that X-rays penetrate x is the thickness d of the X-ray shield 50 to obtain a desired attenuation amount s and the depth d from the upper surface of the blanking aperture array substrate 30 to the circuit portion 36 b can be expressed by the following formula (2) using the minimum penetration angle θ of X-rays. The minimum penetration angle θ is geometrically determined by the positional relationship between the shaping aperture array substrate 10 and the blanking aperture array substrate 30. For example, from the uppermost left end of the shaping aperture array substrate 10 irradiated with an electron beam (the farthest point where bremsstrahlung X-rays are generated), it is the angle of the straight line drawn toward the opening 52a at the lower right end of the X-ray shield 50 directly above the blanking aperture array substrate 30, and a desired X-ray attenuation amount is obtained until reaching the blanking aperture array substrate 30 。 d x =d s cosθ + d b cotθ ···(2)

[0034] Here, the thickness of the gate oxide film of the MOSFET constituting the circuit portion 36 is about several nm and is formed on the outermost surface of the blanking aperture array substrate 30 having a thickness of several hundred μm. Therefore, the depth d from the upper surface of the blanking aperture array substrate 30 to the circuit portion 36 b can be regarded as the thickness of the blanking aperture array substrate 30.

[0035] The flight range d of electrons elcThis is, for example, approximately the Grün range Rg, which represents the distance an electron travels within the blanking aperture array substrate 30 until it loses all its energy. Considering a sufficient margin, it can be considered, for example, twice the Grün range Rg.

[0036] Alignment error ε between the X-ray shield 50 and the blanking aperture array substrate 30 al Considering this, the evacuation distance d evc It is preferable that the following equation (3) is satisfied. d evc >d s cosθ+d b cotθ+2Rg+ε al ...(3)

[0037] For example, if the minimum penetration angle θ of the X-ray is 26.5°, and the thickness d of the X-ray shield 50 is... s The thickness is 1000 μm, and the depth d is from the top surface of the blanking aperture array substrate 30 to the circuit area. b 130 μm, Grün range Rg (in silicon at 50 keV electrons) 17 μm, alignment error ε al If we set to 100 μm, then from equation (3), the evacuation distance d evc It can be determined that the value should be 1.3 mm or more.

[0038] As shown in Figure 7, the blanker 34 and the circuit section 36 may be arranged on the upper (surface) side of the blanking aperture array substrate 30, with a retraction distance d evc This can be similarly determined from equation (3).

[0039] In this case, the X-ray shield 50 covers the circuit portion 36 of the blanking aperture array substrate 30. This protects the circuit portion 36 from scattered electrons generated in the molded aperture array substrate 10. The X-ray shield 50 can also function as a scattered electron shield by tightly sealing the blanking aperture array substrate 30 and the circuit portion 36 with a conductive shielding material such as silver paste between the cell portion C and the circuit portion 36 to prevent scattered electrons from entering through the gaps. .

[0040] Evacuation distance d evc The upper limit is not particularly limited, but the evacuation distance d evc The longer the distance, the greater the signal propagation delay from cell section C to blanka 34, so the evacuation distance d evc It is preferable that the gap be 100 mm or less, and considering that the maximum exposure area of ​​the exposure device is 33 mm and the error of bonding, it is more preferable that it be 66 mm or less, even more preferable that it be 33 mm or less, and even more preferable that it be 16.5 mm or less.

[0041] The above-mentioned retraction distance d is located outward from the open end 52a in the horizontal direction (direction perpendicular to the beam propagation direction). evc By leaving a gap and providing the circuit section 36, the influence of scattered electrons and bremsstrahlung X-rays on the circuit elements can be suppressed, preventing malfunctions.

[0042] As shown in Figure 8, an X-ray shield 20 may be provided on the lower surface of the molded aperture array substrate 10. For example, the X-ray shield 20 is fixed to the molded aperture array substrate 10 with silver paste. The X-ray shield 20 has apertures 22 for electron beam passage formed in accordance with the arrangement positions of each aperture 12 of the molded aperture array substrate 10. The pitch of the apertures 22 (the distance from the center of one aperture 22 to the center of an adjacent aperture 22) is the same as the pitch of the apertures 12.

[0043] The diameter of aperture 22 is the same as or larger than the diameter of aperture 12, and aperture 22 and aperture 12 are in communication with each other. To prevent the X-ray shield 20 from blocking aperture 12, it is preferable to make the diameter of aperture 22 larger than the diameter of aperture 12, taking into account the alignment accuracy between aperture 12 and aperture 22. Furthermore, if the X-ray shield 20 is thick and the beam travels at an angle, it is preferable to change the pitch of aperture 22 in the thickness direction to take this into consideration.

[0044] The X-ray shield 20 can use the same material as the X-ray shield 50.

[0045] The X-ray shield 20 attenuates the bremsstrahlung X-rays generated when the electron beam is stopped by the molded aperture array substrate 10, thereby suppressing damage to the elements provided in the circuit section 36 of the blanking aperture array substrate 30. At this time, the thickness (effective thickness) required to obtain the desired amount of X-ray attenuation can be determined by known methods, such as the method described in Japanese Patent Application Publication No. 2019-36580.

[0046] A pre-aperture array substrate 14 may be integrally provided with the molded aperture array substrate 10 on its upper surface. The pre-aperture array substrate 14 has beam-passing apertures 16 formed in it, corresponding to the positions of each aperture 12 in the molded aperture array substrate 10. The diameter of the apertures 16 is larger than the diameter of the apertures 12, and the apertures 16 and 12 are in communication with each other. The molded aperture array substrate 10 and the pre-aperture array substrate 14 are, for example, made by forming apertures in a silicon substrate.

[0047] As shown in Figure 9, a scattered electron shield 70 may be provided on the lower (back) side of the blanking aperture array substrate 30. An opening 72 is formed in the center of the scattered electron shield 70, allowing the multibeam that has passed through the cell portion C of the blanking aperture array substrate 30 to pass through.

[0048] The material for the scattered electron shield 70 can be, for example, silicon, if the influence of bremsstrahlung X-rays generated by scattered electrons downstream of the blanking aperture array substrate 30 is negligibly small. In this case, the components constituting the scattered electron shield must be thicker than the electron range. Furthermore, to also shield against X-rays, for example, gold or tungsten can be used. In this case, the components constituting the X-ray shield must be thick enough to obtain the desired X-ray attenuation.

[0049] The scattered electron shield 70 covers the circuit portion 36 of the blanking aperture array substrate 30. This protects the circuit portion 36 from scattered electrons generated by structures below the blanking aperture array substrate 30. On the other hand, electrons scattered by the blankers (electrodes) of the cell portion C of the blanking aperture array substrate 30 have a wide angular distribution and can penetrate even through gaps as small as several tens of microns. Therefore, it is preferable to adhere the scattered electron shield 70 to the blanking aperture array substrate 30 between the cell portion C and the circuit portion 36 using a conductive shielding material such as silver paste.

[0050] As shown in Figure 10, a scattered electron shield 60 made of a material thicker than the range of scattered electrons may be provided on the upper surface of the blanking aperture array substrate 30 and within the opening 52 of the X-ray shield 50. The scattered electron shield 60 has an opening 62 that matches the through hole 32 of the cell portion C of the blanking aperture array substrate 30. By providing the scattered electron shield 60, the number of scattered electrons reaching the blanking aperture array substrate 30 can be reduced.

[0051] The material for the scattered electron shield 60 can be, like that of the scattered electron shield 70, for example, silicon, gold, or tungsten. As mentioned above, if gold or tungsten is used, X-rays can also be shielded.

[0052] As shown in Figure 11, a crosstalk shield 80 may be provided in close proximity to the blanker 34 of the blanking aperture array substrate 30. The crosstalk shield 80 has an opening 81 that matches the through hole 32 of the cell portion C of the blanking aperture array substrate 30, and suppresses crosstalk between adjacent electrodes. By constructing this crosstalk shield 80 with a material thicker than the range of scattered electrons, the circuit portion 36 can be protected from scattered electrons generated by structures below the blanking aperture array substrate 30.

[0053] The material for the crosstalk shield 80 can be the same as for the scattered electron shield 70, for example, silicon, gold, or tungsten. As mentioned above, if gold or tungsten is used, X-rays can also be shielded.

[0054] All of the scattered electron shields 60, 70, and crosstalk shield 80 may be provided, or one or two of them may be provided.

[0055] As a countermeasure against bremsstrahlung X-rays generated by scattered electrons irradiated onto the sidewall of the through hole 32, LSIs with high radiation resistance may be used for the elements of the circuit section 36. LSIs with high radiation resistance are, for example, MOSFETs designed for use under normal environmental conditions, with a thinner gate oxide film or a higher impurity concentration in the well.

[0056] It should be noted that the present invention is not limited to the embodiments described above, and the components can be modified and implemented in practice without departing from the spirit of the invention. Furthermore, various inventions can be formed by appropriately combining the multiple components disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiments. Moreover, components from different embodiments may be appropriately combined. [Explanation of symbols]

[0057] 10 Molded aperture array substrate 20 X-ray shielding 30 Blanking aperture array substrates 34 Blanka 36 Circuit section 40 Implemented circuit boards 50 X-ray shielding 100 drawing device 101 samples 102 Electronic Microscope Tube 103 Drawing room 111 Electron source

Claims

1. A blanking aperture array substrate is provided, in which multiple beam passage holes are formed through which each beam of a multi-charged particle beam passes from upstream to downstream, and a blanker is provided corresponding to each beam passage hole to perform blanking deflection of each beam. An X-ray shield is positioned upstream of the blanking aperture array substrate, with an opening formed in its center through which the multi-charged particle beam passes; Equipped with, The cell portion, including the beam passage hole and the blanker, is provided in the central part of the blanking aperture array substrate, and a circuit portion, including circuit elements for applying voltage to each of the blankers, is arranged around the periphery of the cell portion. The blanking aperture array system is configured such that the shortest distance between the circuit section and the edge of the outermost beam passage hole among the plurality of beam passage holes is greater than or equal to the distance based on the range of electrons within the blanking aperture array substrate.

2. The blanking aperture array system according to claim 1, wherein the circuit section is arranged such that the shortest distance from the opening end of the aperture of the X-ray shield is greater than or equal to a distance based on the sum of the penetration distance of the X-rays and the range of the photoelectrons generated by the X-rays.

3. The blanking aperture array system according to claim 1 or 2, comprising a scattered electron shield disposed upstream or downstream of the blanking aperture array substrate and composed of a material thicker than the range of electrons.

4. The blanking aperture array system according to claim 3, wherein the scattered electron shield is in close contact between the cell portion and the circuit portion of the blanking aperture array substrate and covers the circuit portion.

5. The blanking aperture array system according to claim 3, wherein the scattering electron shield is composed of a member having a thickness that obtains a desired amount of X-ray attenuation.

6. The blanking aperture array system according to claim 1 or 2, wherein the X-ray shield is in close contact between the cell portion and the circuit portion of the blanking aperture array substrate and covers the circuit portion.

7. A charged particle beam source that emits a charged particle beam, A molded aperture array substrate having multiple first apertures formed therein, wherein a portion of the charged particle beam passes through each of the multiple first apertures from upstream to downstream to form a multi-charged particle beam, A blanking aperture array substrate is provided, having a plurality of beam passage holes formed through which each beam of the multi-charged particle beam passes from upstream to downstream, and each beam passage hole is provided with a blanker that performs blanking deflection of each beam. An X-ray shield is positioned upstream or downstream of the blanking aperture array substrate, with a second aperture formed in the center through which the multi-charged particle beam passes; Equipped with, The cell portion, including the beam passage hole and the blanker, is provided in the central part of the blanking aperture array substrate, and a circuit portion, including circuit elements for applying voltage to each of the blankers, is arranged around the periphery of the cell portion. The circuit section is a multi-charged particle beam lithography apparatus in which the shortest distance to the edge of the outermost beam passage hole among the plurality of beam passage holes is greater than or equal to the distance based on the range of scattered electrons within the blanking aperture array substrate.

8. The multi-charged particle beam lithography apparatus according to claim 7, wherein the shortest distance between the circuit section and the opening end of the aperture of the X-ray shield is greater than or equal to a distance based on the sum of the penetration distance of the X-rays and the range of the photoelectrons generated by the X-rays.

9. The multi-charged particle beam lithography apparatus according to claim 7 or 8, comprising a scattered electron shield disposed upstream or downstream of the blanking aperture array substrate and composed of a material thicker than the electron range.

10. The multi-charged particle beam lithography apparatus according to claim 9, wherein the scattering electron shield is in close contact between the cell portion and the circuit portion of the blanking aperture array substrate and covers the circuit portion.

11. The multi-charged particle beam lithography apparatus according to claim 9, wherein the scattering electron shield is composed of a member having a thickness that obtains a desired amount of X-ray attenuation.

12. The multi-charged particle beam lithography apparatus according to claim 7 or 8, wherein the X-ray shield is in close contact between the cell portion and the circuit portion of the blanking aperture array substrate and covers the circuit portion.

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