Blanking aperture array system and multi-charged particle beam lithography system

Abstract

To prevent malfunction of circuit elements caused by scattered electrons and X-rays.SOLUTION: A blanking aperture array system includes a blanking aperture array substrate on which a blanker corresponding to each beam of the multi-beams is provided, a first radiation shield, and a second radiation shield. A circuit portion for applying a voltage to the blanker is disposed on the peripheral side of the cell portion including the blanker. The first radiation shield covers the upper side of the circuit portion, is disposed on the upper surface of the blanking aperture array substrate, and has a first plate extending from the peripheral edge of the first opening for passing the multi-beams. The second radiation shield covers the lower side of the circuit portion, hangs down from the lower surface of the blanking aperture array substrate, and has a lower peripheral wall portion surrounding the cell portion, and a lower plate extending from the peripheral edge of the lower opening for passing the multi-beams.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a blanking aperture array system and a multi-charged particle beam lithography apparatus.

Background Art

[0002] With the increasing integration of semiconductor integrated circuits (LSIs), the design dimensions of semiconductor devices (MOSFETs: metal-oxide-semiconductor field-effect transistors) are still being miniaturized in accordance with Moore's law. Lithography, which is responsible for this miniaturization, is an extremely important technology for generating patterns in the semiconductor manufacturing process. To form a desired circuit pattern of an LSI on a wafer, a method of reducing and transferring a high-precision original pattern (mask, or especially those used in steppers and scanners are also called reticles) formed on quartz onto a resist (photosensitive resin) coated on the wafer using a reduction projection exposure apparatus has become the mainstream. Currently, in the formation of the most advanced fine patterns, an EUV scanner using extreme ultraviolet (EUV) as a light source is also adopted. In EUV lithography, a multilayer film that reflects EUV on quartz and an EUV mask in which an absorber formed thereon is patterned are used. All masks are essentially manufactured using an electron beam lithography apparatus that applies an electron beam with excellent resolution.

[0003] Multibeam lithography systems can significantly improve throughput compared to single-beam systems because they can irradiate many beams at once. In a multibeam lithography system using a blanking aperture array substrate, for example, an electron beam emitted from a single electron source is passed through a molded aperture array substrate with multiple apertures to form multiple beams. The multiple beams pass through their respective blankers in the blanking aperture array substrate. The blanking aperture array substrate has electrode pairs (blankers) for individually deflecting the beams and apertures for beam passage between them. By fixing one electrode pair at ground potential and switching the other between ground potential and other potentials, the passing electron beams are individually blanked. The electron beams deflected by the blankers are shielded by limiting apertures, and the undeflected electron beams are irradiated onto the sample. The blanking aperture array substrate is equipped with circuits for independently controlling the electrode potential of each blanker.

[0004] When an electron beam is irradiated onto a molded aperture array substrate with apertures for forming a multi-beam, bremsstrahlung X-rays are generated. Furthermore, when forming a multi-beam on the molded aperture array substrate, some of the electron beam is scattered at the edges of the apertures, becoming scattered electrons. If these bremsstrahlung X-rays and scattered electrons irradiate a blanking aperture array substrate, the electrical characteristics of MOSFETs included in the circuit elements may deteriorate due to the total ionizing dose (TID) effect, potentially causing malfunctions in the circuit elements. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2020-178055 [Patent Document 2] Japanese Patent Application Publication No. 11-317357 [Patent Document 3] Japanese Patent Publication No. 2019-033285 [Overview of the project] [Problems that the invention aims to solve]

[0006] The present invention aims to provide a blanking aperture array system and a multi-charged particle beam lithography apparatus that suppress malfunctions of circuit elements caused by scattered electrons and bremsstrahlung X-rays. [Means for solving the problem]

[0007] A blanking aperture array system according to one aspect of the present invention comprises: a blanking aperture array substrate having a plurality of beam passage holes formed therein through which each beam of a multi-charged particle beam passes from upstream to downstream, and each beam passage hole having a blanker that performs blanking deflection of each beam; a first radiation shield disposed on the upstream side of the blanking aperture array substrate; and a second radiation shield disposed on the downstream side of the blanking aperture array substrate, wherein the cell portion including the beam passage holes and the blankers is provided in the central part of the blanking aperture array substrate, and the circuit portion including circuit elements that apply voltage to each blanker is disposed on the peripheral side of the blanking aperture array substrate from the cell portion, and the first radiation shield covers the top of the circuit portion and is disposed on the upper surface of the blanking aperture array substrate, and is provided with a first aperture for the passage of the multi-charged particle beam, and a first plate extending from the periphery of the first aperture And, positioned above the first plate, a second aperture for the passage of the multi-charged particle beam is provided, and a second plate extending from the periphery of the second aperture, It has, A first peripheral wall portion rises from the periphery of the first opening of the first plate, and a second peripheral wall portion hangs down from the periphery of the second opening of the second plate, with the upper part of the first peripheral wall portion and the lower part of the second peripheral wall portion connected in a nested manner. The second radiation shield covers the lower part of the circuit section, has a lower opening for the passage of the multi-charged particle beam, hangs down from the lower surface of the blanking aperture array substrate, has a lower peripheral wall that surrounds the cell section, and has a lower plate that extends from the periphery of the lower opening.

[0008] A multi-charged particle beam lithography apparatus according to one aspect of the present invention comprises a charged particle beam source that emits a charged particle beam, and a plurality of apertures formed ,beforeA molded aperture array substrate that forms a multi-charged particle beam by having a portion of the charged particle beam pass through a plurality of apertures from upstream to downstream; a blanking aperture array substrate having a plurality of beam passage holes through which each beam of the multi-charged particle beam passes from upstream to downstream, and each beam passage hole is provided with a blanker that performs blanking deflection of each beam; a first radiation shield disposed on the upstream side of the blanking aperture array substrate; and a second radiation shield disposed on the downstream side of the blanking aperture array substrate, wherein the cell portion including the beam passage holes and the blankers is provided in the central part of the blanking aperture array substrate, and a circuit portion including circuit elements that apply voltage to each blanker is disposed on the peripheral side of the blanking aperture array substrate from the cell portion, and the first radiation shield covers the top of the circuit portion and is disposed on the upper surface of the blanking aperture array substrate, and is provided with a first aperture for the passage of the multi-charged particle beam, and a first plate extending from the periphery of the first aperture. And, positioned above the first plate, a second aperture for the passage of the multi-charged particle beam is provided, and a second plate extending from the periphery of the second aperture, It has, A first peripheral wall portion rises from the periphery of the first opening of the first plate, and a second peripheral wall portion hangs down from the periphery of the second opening of the second plate, with the upper part of the first peripheral wall portion and the lower part of the second peripheral wall portion connected in a nested manner. The second radiation shield covers the lower part of the circuit section, has a lower opening for the passage of the multi-charged particle beam, hangs down from the lower surface of the blanking aperture array substrate, has a lower peripheral wall that surrounds the cell section, and has a lower plate that extends from the periphery of the lower opening. [Effects of the Invention]

[0009] According to the present invention, it is possible to suppress malfunctions of circuit elements on a blanking aperture array substrate caused by scattered electrons and bremsstrahlung X-rays. [Brief explanation of the drawing]

[0010] [Figure 1] This is a schematic diagram of a multi-charged particle beam lithography apparatus according to an embodiment of the present invention. [Figure 2] This is a plan view of a molded aperture array substrate. [Figure 3] This is a schematic diagram of a blanking aperture array system. [Figure 4] It is a plan view of a blanking aperture array substrate. [Figure 5] It is a cross-sectional perspective view of a first radiation shield. [Figure 6] FIGS. 6A, 6B, and 6C are diagrams showing an example of a nested structure. [Figure 7] It is a schematic configuration diagram of a blanking aperture array system according to a modification. [Figure 8] It is a partially enlarged view of a blanking aperture array system. [Figure 9] It is a partially enlarged view of a blanking aperture array system. [Figure 10] It is a partially enlarged view of a blanking aperture array system. [Figure 11] It is a schematic configuration diagram of a blanking aperture array system according to a modification. [Figure 12] It is a cross-sectional perspective view of a second radiation shield.

BEST MODE FOR CARRYING OUT THE INVENTION

[0011] Hereinafter, embodiments of the present invention will be described based on the drawings. In the embodiments, as an example of a charged particle beam, a configuration using an electron beam will be described. However, the charged particle beam is not limited to an electron beam, and an ion beam or the like may be used.

[0012] FIG. 1 is a schematic configuration diagram of a drawing apparatus according to an embodiment. The drawing apparatus 100 shown in FIG. 1 is an example of a multi-charged particle beam drawing apparatus. The drawing apparatus 100 includes an electron column 102 and a drawing chamber 103. Inside the electron column 102, an electron source 111, an illumination lens 112, a shaping aperture array substrate 10, a blanking aperture array system 1, a reduction lens 115, a limiting aperture member 116, a projection lens 117, and a deflector 118 are arranged.

[0013] The blanking aperture array system 1 has a blanking aperture array substrate 30, a mounting substrate 40, and a radiation shield 50. The blanking aperture array substrate 30 is mounted on the back side (lower surface side) of the mounting substrate 40. In the present embodiment, the upstream side in the traveling direction of the electron beam (multi-beam MB) is referred to as the front side or upper surface side, and the downstream side in the traveling direction is referred to as the back side or lower surface side.

[0014] An opening for the electron beam (multi-beam MB) to pass through is formed in the central portion of the mounting substrate 40. The radiation shield 50 will be described later.

[0015] An XY stage 105 is arranged in the drawing room 103. On the XY stage 105, a sample 101 such as a mask blank on which a resist is applied and nothing is drawn yet, which becomes a drawing target substrate during drawing, is arranged. The sample 101 includes an exposure mask for manufacturing a semiconductor device, or a semiconductor substrate (silicon wafer) on which a semiconductor device is manufactured.

[0016] As shown in FIG. 2, in the shaping aperture array substrate 10, openings 12 of m rows × n columns (m, n ≥ 2) are formed at a predetermined arrangement pitch. Each of the openings 12 is formed as a rectangle having the same dimensional shape. The shape of the opening 12 may be circular. By a part of the electron beam B passing through each of these plurality of openings 12, a multi-beam MB is formed.

[0017] As shown in FIG. 3, in the blanking aperture array substrate 30, through holes 32 are formed so that each multi-beam MB can pass through in accordance with the arrangement positions of the openings 12 of the shaping aperture array substrate 10. In each through hole 32, a blanker 34 composed of a pair of two electrodes is arranged. One of the electrodes of the blanker 34 is fixed at the ground potential, and the other is switched to a potential different from the ground potential. The electron beams passing through each through hole 32 are independently deflected by the voltage (electric field) applied to the blanker 34.

[0018] In this way, multiple blankers 34 perform blanking deflection of the corresponding beams among the multi-beam MBs that have passed through multiple apertures 12 of the molded aperture array substrate 10.

[0019] As shown in Figure 4, multiple blankers 34 are provided in the central cell section C of the blanking aperture array substrate 30. The blanking aperture array substrate 30 is rectangular in plan view, and circuit sections 36 are provided on both sides of the cell section C in the longitudinal direction (first direction, left-right direction in the figure). The circuit section 36 includes an LSI circuit that controls the voltage application to the blankers 34.

[0020] The circuit section 36, located on the lower side of the blanking aperture array substrate 30, includes a MOSFET and is connected to the mounting substrate 40 by wire bonding. It generates a signal corresponding to data transferred from an external source and applies a voltage to the blanker 34 via wiring (not shown) arranged within the blanking aperture array substrate 30. The circuit section 36 is provided with input / output pads (not shown) to which wires are connected.

[0021] The cell portion C is aligned with the opening in the mounting substrate 40.

[0022] The electron beam B emitted from the electron source 111 (emission unit) illuminates the entire molded aperture array substrate 10 almost vertically by the illumination lens 112. Multiple electron beams (multi-beam MB) are formed as the electron beam B passes through multiple apertures 12 in the molded aperture array substrate 10. The multi-beam MBs pass through their respective through holes 32 in the cell section C of the blanking aperture array substrate 30.

[0023] The multi-beam MB that has passed through the blanking aperture array substrate 30 is reduced by the reduction lens 115 and moves toward the central aperture of the limiting aperture member 116. Here, the electron beam that has been slightly deflected by the blanker 34 is moved away from the central aperture of the limiting aperture member 116 and is shielded by the limiting aperture member 116. On the other hand, the electron beam that has not been deflected by the blanker 34 passes through the central aperture of the limiting aperture member 116. Beam blanking control is performed by controlling the electric field by applying a voltage to the blanker 34, i.e., by on / off operation, and the on / off state of each beam on the sample 101 is controlled.

[0024] In this way, the limiting aperture member 116 shields each beam that has been deflected by the multiple blankers 34 to the beam-off state. The time from when the beam turns on to when it turns off becomes the exposure time for one beam irradiation on the resist on the sample 101.

[0025] The multi-beams that have passed through the limiting aperture member 116 are focused onto the sample 101 by the projection lens 117, and the shape of the aperture 12 of the molded aperture array substrate 10 (image of the object surface) is projected onto the sample 101 (image surface) at a desired reduction ratio. The entire multi-beam is deflected in the same direction by the deflector 118 and irradiated to the respective irradiation positions on the sample 101 for each beam. When the XY stage 105 is moving continuously, the deflector 118 controls the beam irradiation positions so that they follow the movement of the XY stage 105.

[0026] Here, when forming a multi-beam MB on the molded aperture array substrate 10, a portion of the electron beam B strikes the molded aperture array substrate 10, generating X-rays. Additionally, when scattered electrons from a portion of the electron beam B scattered at the edge of the aperture 12, or reflected electrons from the sidewall of the aperture 12, strike the blanking aperture array substrate 30 or other components within the lithography device, X-rays are generated from the points of impact. If such X-rays irradiate the circuit portion 36 of the blanking aperture array substrate 30, the electrical characteristics of the transistors may deteriorate due to the TID effect, potentially causing malfunctions.

[0027] Therefore, in this embodiment, the circuit portion 36 of the blanking aperture array substrate 30 is covered with a radiation shield 50 made of a material with high X-ray absorption to suppress the effects of X-rays. The higher the atomic number of the radiation shield 50, the higher the X-ray absorption. For this reason, the radiation shield 50 is preferably made of a heavy metal, such as tungsten, gold, tantalum, or lead. The radiation shield 50 preferably has a thickness that attenuates the X-rays generated in the drawing device to about 1 / 1000 to 1 / 10000 or less.

[0028] As shown in Figure 3, the radiation shield 50 includes a first radiation shield 51 positioned on the upper side of the blanking aperture array substrate 30 and a second radiation shield 55 positioned on the lower side of the blanking aperture array substrate 30.

[0029] The first radiation shield 51 includes a first plate 52 placed between the mounting substrate 40 and the blanking aperture array substrate 30, and a second plate 53 placed on the mounting substrate 40.

[0030] As shown in Figures 3 and 5, the first plate 52 has a rectangular opening 52a (first opening) for multi-beam passage. The second plate 53 has a rectangular opening 53a (second opening) for multi-beam passage. The first plate 52 and the second plate 53 are arranged so that the multi-beam passes through the openings 52a and 53a to the cell section C. Figure 5 is a cross-sectional perspective view of the first radiation shield 51. The first plate 52 extends from the periphery of the opening 52a so as to be parallel to the upper surface of the blanking aperture array substrate 30. The second plate 53 extends from the periphery of the opening 53a so as to be parallel to the upper surface of the blanking aperture array substrate 30.

[0031] The lower surface of the first plate 52 is in close contact with the upper surface of the blanking aperture array substrate 30. For example, the lower surface of the first plate 52 and the upper surface of the blanking aperture array substrate 30 are bonded together with a conductive adhesive such as silver paste.

[0032] The first plate 52 has a peripheral wall portion 52b (first peripheral wall portion) that rises from the periphery of the opening 52a. The upper surface of the first plate 52 on the peripheral side of the peripheral wall portion 52b is in close contact with the lower surface of the mounting substrate 40. The upper surface of the first plate 52 and the lower surface of the mounting substrate 40 are bonded together with a conductive adhesive such as silver paste. In the wiring direction of the wire bonding (left-right direction in the figure), the outer end of the first plate 52 is located outside the outer end of the blanking aperture array substrate 30 and inside the connection point between the wire bonding and the mounting substrate 40.

[0033] The second plate 53 has a peripheral wall portion 53b (second peripheral wall portion) that hangs down from the periphery of the opening 53a. The lower surface of the second plate 52 on the peripheral side of the peripheral wall portion 53b is in contact with the upper surface of the mounting substrate 40. The second plate 53 is fixed to the mounting substrate 40 or other components of the drawing device using fastening members such as screws.

[0034] Notches are provided in the upper part of the peripheral wall portion 52b of the first plate 52 and in the lower part of the peripheral wall portion 53b of the second plate 53. The respective protrusions and recesses interlock and fit together, connecting the peripheral wall portions 52b and 53b. When connected, it is preferable that the inner circumferential surfaces and outer circumferential surfaces of the peripheral wall portions 52b and 53b are flush with each other.

[0035] As shown in Figures 3 and 12, the second radiation shield 55 has a peripheral wall portion 56 (third peripheral wall portion) that hangs down from the lower surface of the blanking aperture array substrate 30 and surrounds the cell portion C, and a third plate 57 (lower plate). Figure 12 is a cross-sectional perspective view of the second radiation shield 55.

[0036] The peripheral wall portion 56 is located in a region inside the circuit portion 36 and outside the cell portion C. The upper end of the peripheral wall portion 56 is in close contact with the lower surface of the blanking aperture array substrate 30. For example, the upper end surface 56a of the peripheral wall portion 56 and the lower surface of the blanking aperture array substrate 30 are bonded together with a conductive adhesive such as silver paste.

[0037] The third plate 57 has a rectangular opening 57a (lower opening) for multi-beam passage. The third plate 57 is separated from the lower surface of the blanking aperture array substrate 30 and extends from the periphery of the opening 57a so as to be parallel to the lower surface of the blanking aperture array substrate 30. The third plate 57 has a peripheral wall portion 57b (fourth peripheral wall portion) that rises from the periphery of the opening 57a.

[0038] The upper part of the peripheral wall portion 57b of the third plate 57 and the lower part of the peripheral wall portion 56 are provided with notches, and the respective protrusions and recesses interlock and fit together to connect the peripheral wall portion 57b and the peripheral wall portion 56. When connected, it is preferable that the inner circumferential surfaces and outer circumferential surfaces of the peripheral wall portion 57b and the peripheral wall portion 56 are flush with each other. The peripheral wall portion 56 and the peripheral wall portion 57b constitute the lower peripheral wall portion located below the blanking aperture array substrate 30.

[0039] As shown in Figure 4, when circuit sections 36 are provided on both sides of the blanking aperture array substrate 30 in the longitudinal direction (first direction, left-right direction in the figure) with the cell section C in between, the lower peripheral wall section is arranged in both the region R1 between the cell section C and the circuit section 36 and the region R2 between the cell section C and the end of the blanking aperture array substrate 30 in the short direction (second direction, up-down direction in the figure). The circuit section 36 provided on the lower surface side of the blanking aperture array substrate 30 is located in the space formed by the lower peripheral wall section and the third plate 57.

[0040] A cap member 60 is placed on the outer circumferential surfaces of the peripheral wall portion 57b and the peripheral wall portion 56 so as to close the gap between the upper part of the peripheral wall portion 57b and the lower part of the peripheral wall portion 56. The cap member 60 is made of copper, titanium, tungsten, or the like. The cap member 60 is fixed to other components of the drawing device using fasteners such as screws. The third plate 57 is fixed to the cap member 60 using fasteners such as screws.

[0041] The position of the outer edge of the third plate 57 in the wiring direction of the wire bonding (left-right direction in the diagram) is approximately the same as the position of the outer edge of the second plate 53, and is located outside the connection point between the wire bonding and the mounted substrate 40. In addition, the third plate 57 and the second plate 53 have approximately the same thickness.

[0042] In this way, by covering the area above and below the circuit section 36 of the blanking aperture array substrate 30 with radiation shields 50 (first plate 52, second plate 53, third plate 57), and by arranging radiation shields 50 (peripheral wall sections 52b, 53b, 56, 57b) between the area where the circuit section 36 is formed and the multi-beam passing area, the circuit section 36 can be protected from X-rays, preventing malfunctions of the circuit elements and extending the lifespan of the blanking aperture array substrate 30.

[0043] In the above embodiment, the first radiation shield 51 is composed of a first plate 52 and a second plate 53, and the second radiation shield 55 is composed of a peripheral wall portion 56 and a third plate 57. Therefore, when the blanking aperture array substrate 30 is replaced, the first plate 52 and peripheral wall portion 56, which are bonded to the blanking aperture array substrate 30, are replaced together, but the second plate 53 and third plate 57 can be separated and reused, thus reducing costs.

[0044] The connection between the peripheral wall portion 52b and the peripheral wall portion 53b is a nested structure with notches, so that the gap between the peripheral wall portion 52b and the peripheral wall portion 53b becomes stepped (zigzag), preventing X-rays from entering the circuit portion 36. The shape of the nested structure is not limited to that shown in Figure 3, and as shown in Figures 6A, 6B, and 6C, the number and inclination of the stepped sections may differ. The same applies to the shape of the nested structure formed by the peripheral wall portion 57b and the peripheral wall portion 56.

[0045] As shown in Figure 7, a metal fourth plate 62 may be placed between the mounting substrate 40 and the second plate 53. The second plate 53 is fixed to the fourth plate 62 using fasteners such as screws. The fourth plate 62 may be fixed to the cap member 60 with screws at a position separated from the cell portion C. At this time, the mounting substrate 40 may also be fixed to the fourth plate 62 by fastening together. From a cost standpoint, it is preferable to use a non-magnetic metal that is cheaper than tungsten, such as lead or titanium, as the material for the fourth plate 62.

[0046] Alternatively, a fifth plate 58 made of the same material as the third plate 57 may be attached to the lower surface of the third plate 57 to increase the thickness of the second radiation shield 55. The fifth plate 58 has multi-beam passing openings of the same size as the third plate 57, and the fifth plate 58 is attached to the third plate 57 by aligning the openings. The method of attaching the fifth plate 58 to the third plate 57 is not limited and may be done by screw fastening or by bonding with a conductive adhesive.

[0047] From a manufacturing and assembly standpoint, it is preferable to have a laminated structure of the third plate 57 and the fifth plate 58 rather than increasing the thickness of the third plate 57.

[0048] In the wiring direction of the wire bonding (left-right direction in the diagram), the outer end of the fifth plate 58 is located further out than the outer end of the third plate 57.

[0049] As shown in Figure 8, a down piece 53c may be provided outside the blanking aperture array substrate 30, extending downward from the lower surface of the second plate 53 of the first radiation shield 51, and an up piece 58c may be provided extending upward from the upper surface of the fifth plate 58 of the second radiation shield 55. The down piece 53c and the up piece 58c may close the space between the second plate 53 and the fifth plate 58, preventing the intrusion of scattered electrons. Notches may be provided at the lower end of the down piece 53c and the upper end of the up piece 58c, respectively, to form a nested structure by combining the notches. Alternatively, the lower end of the down piece 53c and the upper end of the up piece 58c may be brought into contact and fastened with screws.

[0050] As shown in Figure 9, a non-magnetic metal body 70 may be placed outside the blanking aperture array substrate 30, between the lower surface of the second plate 53 of the first radiation shield 51 and the upper surface of the fifth plate 58 of the second radiation shield 55, to prevent the intrusion of scattered electrons. From a cost perspective, it is preferable to use a non-magnetic metal such as lead or titanium, which is less expensive than tungsten, for the non-magnetic metal body 70.

[0051] As shown in Figure 10, a non-magnetic metal plate 72 may be provided on the upper surface of the second plate 53 of the first radiation shield 51, extending outward from the second plate 53. Similarly, a non-magnetic metal plate 74 may be provided on the lower surface of the fifth plate 58 of the second radiation shield 55, extending outward from the fifth plate 58. By providing the non-magnetic metal plates 72 and 74, the intrusion of scattered electrons can be prevented. From a cost perspective, it is preferable to use non-magnetic metals such as lead or titanium, which are less expensive than tungsten, for the non-magnetic metal plates 72 and 74.

[0052] A flat, second radiation shield 55 may be placed in close contact with the underside of the blanking aperture array substrate 30. In this case, data transfer wires are connected to the side of the blanking aperture array substrate 30.

[0053] In the above embodiment, the peripheral wall portion 56 and the third plate 57 were described as separate components, with the cap member 60 placed on the outer circumferential surfaces of the peripheral wall portion 57b and the peripheral wall portion 56. However, as shown in Figure 11, they may be integrated. That is, the upper end surface of the peripheral wall portion 57b rising from the third plate 57 may be in close contact with the lower surface of the blanking aperture array substrate 30. In such a configuration, the cap member 60 can be omitted. This is also applicable to the configuration shown in Figure 7.

[0054] It should be noted that the present invention is not limited to the embodiments described above, and the components can be modified and implemented in practice without departing from the spirit of the invention. Furthermore, various inventions can be formed by appropriately combining the multiple components disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiments. Moreover, components from different embodiments may be appropriately combined. [Explanation of symbols]

[0055] 10 Molded aperture array substrate 30 Blanking aperture array substrates 34 Blanka 36 Circuit section 40 Implemented circuit boards 50 Radiation Shield 100 Drawing device 101 samples 102 Electronic Microscope Tube 103 Drawing room 111 Electron source

Claims

1. A blanking aperture array substrate is provided, in which multiple beam passage holes are formed through which each beam of a multi-charged particle beam passes from upstream to downstream, and a blanker is provided corresponding to each beam passage hole to perform blanking deflection of each beam. A first radiation shield positioned upstream of the blanking aperture array substrate, A second radiation shield is positioned downstream of the blanking aperture array substrate, Equipped with, The cell portion, including the beam passage hole and the blanker, is provided in the central part of the blanking aperture array substrate, and the circuit portion, including circuit elements for applying voltage to each blanker, is arranged on the peripheral side of the blanking aperture array substrate from the cell portion. The first radiation shield covers the circuit section above and is positioned on the upper surface of the blanking aperture array substrate. It has a first plate extending from the periphery of the first aperture, which is provided with a first aperture for the passage of the multi-charged particle beam, and is positioned above the first plate. It has a second aperture for the passage of the multi-charged particle beam, which is provided with a second plate extending from the periphery of the second aperture. The first peripheral wall portion rises from the peripheral edge of the first opening of the first plate, The second peripheral wall portion hangs down from the peripheral edge of the second opening of the second plate, The upper part of the first peripheral wall and the lower part of the second peripheral wall are connected in a nested manner. The blanking aperture array system comprises a second radiation shield covering the lower part of the circuit section, having a lower opening for the passage of the multi-charged particle beam, a lower peripheral wall that hangs down from the lower surface of the blanking aperture array substrate and surrounds the cell section, and a lower plate extending from the periphery of the lower opening.

2. The lower peripheral wall portion surrounding the cell portion is arranged in the region between the cell portion and the circuit portion of the blanking aperture array substrate, and in the region between the cell portion and the edge of the blanking aperture array substrate, respectively. The blanking aperture array system according to claim 1, wherein the circuit portion provided on the lower surface side of the blanking aperture array substrate is located within the space formed by the lower peripheral wall portion and the lower plate.

3. The blanking aperture array system according to claim 1, wherein the lower plate is connected to the lower part of the lower peripheral wall and is arranged at a distance from the lower surface of the blanking aperture array substrate.

4. The aforementioned lower peripheral wall portion is, A third peripheral wall portion hangs down from the lower surface of the blanking aperture array substrate and surrounds the cell portion, A fourth peripheral wall portion rising from the peripheral edge of the lower opening of the lower plate, It has, The blanking aperture array system according to claim 3, wherein the lower part of the third peripheral wall and the upper part of the fourth peripheral wall are connected in a nested manner.

5. The blanking aperture array system according to claim 1, wherein the lower surface of the first plate and the upper surface of the blanking aperture array substrate are in close contact.

6. The lower surface of the first plate and the upper surface of the blanking aperture array substrate are bonded together with an adhesive. The blanking aperture array system according to claim 4, wherein the upper surface of the third peripheral wall and the lower surface of the blanking aperture array substrate are bonded together with an adhesive.

7. The system further comprises a mounting substrate disposed between the first plate and the second plate, The blanking aperture array system according to claim 1, wherein the circuit section is provided on the lower side of the blanking aperture array substrate and connected to the mounting substrate by wire bonding.

8. A blanking aperture array substrate is provided, in which multiple beam passage holes are formed through which each beam of a multi-charged particle beam passes from upstream to downstream, and a blanker is provided corresponding to each beam passage hole to perform blanking deflection of each beam. A first radiation shield positioned upstream of the blanking aperture array substrate, A second radiation shield is positioned downstream of the blanking aperture array substrate, Equipped with, The cell portion, including the beam passage hole and the blanker, is provided in the central part of the blanking aperture array substrate, and the circuit portion, including circuit elements for applying voltage to each blanker, is arranged on the peripheral side of the blanking aperture array substrate from the cell portion. The first radiation shield covers the circuit section above, is positioned on the upper surface of the blanking aperture array substrate, has a first aperture for the passage of the multi-charged particle beam, and has a first plate extending from the periphery of the first aperture. The second radiation shield covers the lower part of the circuit section, has a lower opening for the passage of the multi-charged particle beam, hangs down from the lower surface of the blanking aperture array substrate, has a lower peripheral wall that surrounds the cell section, and has a lower plate that extends from the periphery of the lower opening. The lower plate is connected to the lower part of the lower peripheral wall and is positioned away from the lower surface of the blanking aperture array substrate. The aforementioned lower peripheral wall portion is, A third peripheral wall portion hangs down from the lower surface of the blanking aperture array substrate and surrounds the cell portion, A fourth peripheral wall portion rising from the peripheral edge of the lower opening of the lower plate, It has, The lower part of the third peripheral wall and the upper part of the fourth peripheral wall are connected in a nested manner. A blanking aperture array system in which notches are provided in the lower part of the third peripheral wall and the upper part of the fourth peripheral wall, and the third peripheral wall and the fourth peripheral wall are connected by interlocking and fitting their respective protrusions and recesses.

9. A charged particle beam source that emits a charged particle beam, A molded aperture array substrate having multiple openings formed therein, and a portion of the charged particle beam passing through each of the multiple openings from upstream to downstream to form a multi-charged particle beam, A blanking aperture array substrate is provided, having a plurality of beam passage holes formed through which each beam of the multi-charged particle beam passes from upstream to downstream, and each beam passage hole is provided with a blanker that performs blanking deflection of each beam. A first radiation shield positioned upstream of the blanking aperture array substrate, A second radiation shield is positioned downstream of the blanking aperture array substrate, Equipped with, The cell portion, including the beam passage hole and the blanker, is provided in the central part of the blanking aperture array substrate, and the circuit portion, including circuit elements for applying voltage to each blanker, is arranged on the peripheral side of the blanking aperture array substrate from the cell portion. The first radiation shield covers the circuit section above and is positioned on the upper surface of the blanking aperture array substrate. It has a first plate extending from the periphery of the first aperture, which is provided with a first aperture for the passage of the multi-charged particle beam, and is positioned above the first plate. It has a second aperture for the passage of the multi-charged particle beam, which is provided with a second plate extending from the periphery of the second aperture. The first peripheral wall portion rises from the peripheral edge of the first opening of the first plate, The second peripheral wall portion hangs down from the peripheral edge of the second opening of the second plate, The upper part of the first peripheral wall and the lower part of the second peripheral wall are connected in a nested manner. The multi-charged particle beam lithography apparatus comprises a second radiation shield which covers the lower part of the circuit section, has a lower opening for the passage of the multi-charged particle beam, hangs down from the lower surface of the blanking aperture array substrate and has a lower peripheral wall that surrounds the cell section, and a lower plate that extends from the periphery of the lower opening.

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