Semiconductor equipment

By alternately arranging IGBT and FWD regions with varying widths and maintaining a specific width ratio, the semiconductor device addresses uneven heat dissipation, preventing central region overheating and enhancing operational reliability.

JP7882187B2Active Publication Date: 2026-06-30DENSO CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
DENSO CORP
Filing Date
2023-08-09
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

In semiconductor devices with IGBT and FWD regions, regions at the edges dissipate heat more easily, leading to uneven temperature distribution with the central regions becoming hotter, potentially causing damage.

Method used

The IGBT and FWD regions are alternately arranged with varying widths, where the central regions have narrower widths compared to the edge regions, and the ratio of widths is maintained between 1.5 to 4.5, to prevent excessive heating.

Benefits of technology

This configuration effectively suppresses temperature rise in central regions, enhancing heat dissipation and preventing damage, thereby increasing the semiconductor device's operational reliability and current capacity.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To prevent an area located on the central part side of a cell region from reaching high temperature.SOLUTION: A semiconductor device induces a semiconductor substrate 30 having a cell region 10 and an outer peripheral region 20 surrounding the cell region 10, IGBT regions 11 formed in the cell region 10 and each having an IGBT element, and FWD regions 12 formed in the cell region 10 and each having an FWD element. In one direction along the surface of the semiconductor substrate 30, the IGBT regions 11 and the FED regions 12 are formed alternately. The number of IGBT regions 11 is three or more, and when length along the one direction is defined as width, the width of one of the IGBT regions located on the central side in the one direction is narrower than the width of one of the IGBT located on an end side in the one direction.SELECTED DRAWING: Figure 1
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