Magnetic multilayer films and magnetoresistive elements

Abstract

Provided are: a laminated film which enables a writing current to flow, and can achieve a high-density and / or high-speed memory; and a magnetoresistive effect element using the same. A magnetic laminated film 10 comprises: a first ferromagnetic layer 12; an interlayer coupling nonmagnetic layer 10a provided on the first ferromagnetic layer 12; and a second ferromagnetic layer 16 provided on the interlayer coupling nonmagnetic layer 10a, wherein the interlayer coupling nonmagnetic layer 10a has a three-layer structure having a first nonmagnetic layer 13, an interlayer coupling layer 14, and a second nonmagnetic layer 15. The interlayer coupling layer 14 is selected from metals or alloys containing at least Ir, Ru, and Rh. The first nonmagnetic layer 13 and the second nonmagnetic layer 15 are each selected from Pt-containing metals or alloys.

Description

[Technical Field]

[0001] This invention relates to a magnetic multilayer film and a magnetoresistive element. [Background technology]

[0002] For spintronic integrated circuits to be realized, information writing is crucial. In spintronics, one method for electrically reversing magnetization is to utilize spin injection magnetization reversal. This method involves passing an electric current through a magnetic tunnel junction (MTJ), which consists of a recording layer with reversible magnetization, a barrier layer made of an insulator, and a reference layer with a fixed magnetization direction, thereby reversing the magnetization of the recording layer. On the other hand, in recent years, a method utilizing spin orbit torque (SOT) induced magnetization reversal has emerged for electrically reversing magnetization, and MRAM (Magnetic Random Access Memory) elements using this method are attracting attention.

[0003] SOT-MRAM elements are constructed by providing an MTJ (Metal Transistor Junction) containing a recording layer, barrier layer, and reference layer in a heavy metal layer. By passing an electric current through the heavy metal layer, a spin current is induced by spin-orbit interaction. The polarized spins caused by this spin current flow into the recording layer, reversing the magnetization of the recording layer. This causes the direction of magnetization in the recording layer to switch between being parallel to and antiparallel to the direction of magnetization in the reference layer, thereby recording data (Patent Documents 1 to 3).

[0004] On the other hand, the following report has been made on the magnetoresistance effect of a tunnel junction using an antiferromagnet (Non-Patent Document 1), which is configured by providing an antiferromagnet on one side of a barrier layer and a non-magnetic metal on the opposite side. The ferromagnetic moment of NiFe is reversed by an external magnetic field, which induces the rotation of the antiferromagnetic moment of IrMn exchange-coupled with NiFe. The tunneling anisotropic magnetoresistance (TAMR) associated with the rotation of the moment of IrMn has been detected.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Non-Patent Documents

[0006]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] Regarding MRAM using a ferromagnetic material, when it comes to a miniaturized region smaller than the 1Xnm rule, the influence of the leakage magnetic field cannot be ignored, and various malfunctions are expected to occur.

[0008] Therefore, an object of the present invention is to provide a magnetic laminated film capable of passing a write current and realizing a high-density and / or high-speed memory, and a magnetoresistive effect element using the same.

Means for Solving the Problems

[0009] The concept of this invention is as follows: [1] A first ferromagnetic layer and An antiferromagnetic coupling layer provided on the first ferromagnetic layer, A second ferromagnetic layer provided on the antiferromagnetic coupling layer, Includes, A magnetic multilayer film in which the antiferromagnetic coupling layer comprises a first non-magnetic layer and an interlayer-coupled non-magnetic layer. [2] The magnetic laminated film according to [1], wherein the antiferromagnetic coupling layer comprises the first nonmagnetic layer, the interlayer-coupled nonmagnetic layer provided on the first nonmagnetic layer, and the second nonmagnetic layer provided on the interlayer-coupled nonmagnetic layer. [3] The magnetic multilayer film according to [1] or [2], wherein the first non-magnetic layer is made of a metal or alloy containing Pt. [4] The magnetic multilayer film according to any one of [1] to [3], wherein the interlayer bonding nonmagnetic layer is made of a metal or alloy containing at least one of Ir, Rh, or Ru. [5] The magnetic multilayer film according to any one of [1] to [4], wherein the magnetization of the first ferromagnetic layer and the second ferromagnetic layer are reversed by a spin orbit torque caused by an electric current. [6] A magnetic multilayer film according to any one of [1] to [5], wherein a third non-magnetic layer is provided on the surface of the first ferromagnetic layer opposite to the antiferromagnetic coupling layer and / or on the surface of the second ferromagnetic layer opposite to the antiferromagnetic coupling layer, and the third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. [7] A magnetic multilayer film according to any one of the above items [1] to [6], A recording layer provided on the magnetic laminate film, comprising a ferromagnetic layer or an antiferromagnetic layer, A barrier layer made of an insulating material and provided on the recording layer, A reference layer provided on the barrier layer, It is equipped with, The first ferromagnetic layer or the second ferromagnetic layer of the magnetic multilayer film and the ferromagnetic layer or the antiferromagnetic layer in the recording layer are coupled by an exchange interaction. A magnetoresistive element in which, by passing an electric current in a direction intersecting the stacking direction of the magnetic laminate, the magnetization in the first ferromagnetic layer and the second ferromagnetic layer are reversed, and the magnetization of the recording layer is reversed. [8] The magnetoresistive element according to [7], wherein the reference layer is made of a non-magnetic layer. [9] The magnetoresistive element according to [7], wherein the reference layer comprises a magnetic layer with fixed magnetization.

[10] The magnetic laminate is configured such that a third non-magnetic layer is provided on the recording layer side or the side opposite to the recording layer of the magnetic laminate, The third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. A magnetoresistive element as described in any one of the above paragraphs [7] to [9].

[11] The magnetic laminate is configured such that a third non-magnetic layer is provided on the recording layer side of the magnetic laminate, and a fourth non-magnetic layer is provided on the side of the magnetic laminate opposite to the recording layer. The third non-magnetic layer and the fourth non-magnetic layer are made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. A magnetoresistive element as described in any one of the above paragraphs [7] to [9].

[12] A conductive layer comprising a first ferromagnetic layer, an antiferromagnetic coupling layer provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the antiferromagnetic coupling layer, wherein the antiferromagnetic coupling layer comprises a conductive layer comprising a first non-magnetic layer and an interlayer coupling non-magnetic layer, The conductive layer provided on the aforementioned conductive layer Record Layers, A barrier layer provided on the recording layer, A reference layer provided on the barrier layer, Equipped with, The conductive layer comprises a third non-magnetic layer provided on the side of the recording layer or on the side opposite to the recording layer, and the third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn, thus forming a magnetoresistive element.

[13] The magnetoresistive element according to

[12] , wherein the ferromagnetic layer of the first ferromagnetic layer and the second ferromagnetic layer in contact with the third non-magnetic layer has a magnetization tilted in the direction of current application to the conductive layer.

[14] The first ferromagnetic layer, An antiferromagnetic coupling layer provided on the first ferromagnetic layer, A second ferromagnetic layer provided on the antiferromagnetic coupling layer, Includes, The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled. The antiferromagnetic coupling layer is composed of a first nonmagnetic layer and an interlayer coupling nonmagnetic layer, The first non-magnetic layer is made of a metal or alloy containing Pt, A magnetic multilayer film in which the interlayer bonding nonmagnetic layer is made of a metal or alloy containing at least one of Ir, Rh, or Ru.

[15] The first ferromagnetic layer, An antiferromagnetic coupling layer provided on the first ferromagnetic layer, A second ferromagnetic layer provided on the antiferromagnetic coupling layer, Includes, The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled. The antiferromagnetic coupling layer comprises a first non-magnetic layer, an interlayer-coupled non-magnetic layer provided on the first non-magnetic layer, and a second non-magnetic layer provided on the interlayer-coupled non-magnetic layer. The first non-magnetic layer and the second non-magnetic layer are made of a metal or alloy containing Pt. A magnetic multilayer film in which the interlayer bonding nonmagnetic layer is made of a metal or alloy containing at least one of Ir, Rh, or Ru.

[16] The magnetic multilayer film according to

[14] or

[15] , wherein a third non-magnetic layer is provided on the surface of the first ferromagnetic layer opposite to the antiferromagnetic coupling layer and / or on the surface of the second ferromagnetic layer opposite to the antiferromagnetic coupling layer, and the third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. [Effects of the Invention]

[0010] According to the present invention, it is possible to provide a magnetic multilayer film that can conduct writing current and realize high-density and / or high-speed memory, and a magnetoresistive element using the same. [Brief explanation of the drawing]

[0011] [Figure 1A] Figure 1A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to a first embodiment of the present invention. [Figure 1B] Figure 1B is a cross-sectional view along line AA in Figure 1A. [Figure 2A] Figure 2A is a diagram illustrating the state in which data "0" is written to the recording layer by passing an electric current through a magnetic multilayer film according to the first embodiment of the present invention. [Figure 2B] Figure 2B is a diagram illustrating the state in which data "1" is written to the recording layer by applying a current in the reverse direction to a magnetic multilayer film according to the first embodiment of the present invention. [Figure 3A] Figure 3A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to a second embodiment of the present invention. [Figure 3B] Figure 3B is a cross-sectional view along line BB in Figure 3A. [Figure 3C] Figure 3C is a cross-sectional view of a magnetic multilayer film and magnetoresistive element according to a second embodiment of the present invention, from another perspective. [Figure 3D] Figure 3D is another cross-sectional view of a magnetic multilayer film and magnetoresistive element according to a second embodiment of the present invention. [Figure 4A]Figure 4A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to a third embodiment of the present invention. [Figure 4B] Figure 4B is a cross-sectional view along the CC line in Figure 4A. [Figure 5A] Figure 5A is a diagram illustrating the state in which data "0" is written to the recording layer by passing an electric current through a magnetic laminate film according to the third embodiment of the present invention. [Figure 5B] Figure 5B is a diagram illustrating the state in which data "1" is written to the recording layer by applying a current in the reverse direction to a magnetic laminate film according to the third embodiment of the present invention. [Figure 6A] Figure 6A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to a fourth embodiment of the present invention. [Figure 6B] Figure 6B is a cross-sectional view along the DD line in Figure 6A. [Figure 6C] Figure 6C is a cross-sectional view of a magnetic multilayer film and magnetoresistive element according to a fourth embodiment of the present invention, from another perspective. [Figure 6D] Figure 6D is another cross-sectional view of a magnetic multilayer film and magnetoresistive element according to a fourth embodiment of the present invention. [Figure 7] Figure 7 shows the magnetization curve of the sample from Demonstration Example 1. [Figure 8] Figure 8 shows the magnetization curve of the sample from demonstration example 2. [Figure 9] Figure 9 shows the magnetization curve of the sample from demonstration example 3. [Figure 10] Figure 10 is a graph showing the dependence of the interlayer bonding force Jex (mJ / m2) on the total thickness (nm) of the non-magnetic layer. [Figure 11] Figure 11 shows the magnetization curve of the sample from demonstration example 5. [Figure 12] Figure 12 shows the magnetization curve of the sample from demonstration example 6. [Figure 13] Figure 13 shows the magnetization curve of the sample from demonstration example 7. [Figure 14] Figure 14 shows the magnetization curve of the sample from demonstration example 8. [Figure 15]Figure 15 is a graph showing the dependence of the interlayer bonding force Jex (mJ / m2) on the total thickness (nm) of the non-magnetic layer. [Figure 16] Figure 16 shows the dependence of the interlaminar bonding force Jex on the Ir thickness. [Figure 17] Figure 17 shows the dependence of the interlayer bonding force Jex on the Ru thickness. [Figure 18] Figure 18 is a schematic diagram showing the hole bar and measurement system prepared as sample 29. [Figure 19A] Figure 19A is a cross-sectional view of the prepared sample 29. [Figure 19B] Figure 19B is a cross-sectional view of the sample of Comparative Example 2 that was prepared. [Figure 20] Figure 20 shows the pulse current dependence of the Hall resistance Rxy(Ω) of the sample in Sample 29 and Comparative Example 2. [Figure 21A] Figure 21A shows the dependence of spin generation efficiency on Ir layer thickness for samples 30 to 34. [Figure 21B] Figure 21B shows the dependence of spin generation efficiency on interlayer coupling force Jex(mJ / m2) for samples 30 to 34. [Figure 22A] Figure 22A shows the dependence of spin generation efficiency on Pt layer thickness for samples 35 to 39. [Figure 22B] Figure 22B shows the dependence of spin generation efficiency on interlayer coupling force Jex(mJ / m2) for samples 35 to 39. [Figure 23A] Figure 23A is a plan view of a magnetoresistive element according to the fifth embodiment. [Figure 23B] Figure 23B is a cross-sectional view along the EE line in Figure 23A. [Figure 24] Figure 24 is a cross-sectional view of a magnetoresistive element according to the sixth embodiment. [Figure 25] Figure 25 is a cross-sectional view of a magnetoresistive element according to the seventh embodiment. [Figure 26] Figure 26 is a cross-sectional view of demonstration example 10. [Figure 27]Figure 27 is an electron microscope image of the hole bar prepared in demonstration example 10. [Figure 28A] Figure 28A shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 10, when a pulse current I was applied for 200 μs and a constant external magnetic field Hex was applied for 49 mT and 39 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. [Figure 28B] Figure 28B shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 10, when a pulse current I was applied for 200 μs and a constant external magnetic field Hex was applied for 28.5 mT and 18 mT respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. [Figure 28C] Figure 28C shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 10, when a pulse current I was applied for 200 μs, a constant external magnetic field Hex was applied at 8 mT and 0 mT respectively, and in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. [Figure 28D] Figure 28D shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 10, when a pulse current I was applied for 200 μs and a constant external magnetic field Hex was applied at -6.5 mT and -16.5 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. [Figure 28E] Figure 28E shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 10, when a pulse current I was applied for 200 μs and a constant external magnetic field Hex was applied at -27 mT and -37 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. [Figure 28F] Figure 28F shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 10, when a pulse current I was applied for 200 μs and a constant external magnetic field Hex was applied at -48 mT and -58 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. [Figure 29]Figure 29 shows the dependence of the Hall resistance Rxy(Ohm) on the number of repetitions when pulse current is alternately applied in the ± direction in the absence of a magnetic field in demonstration example 10. [Figure 30] Figure 30 shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 11, when a pulse current I was applied for 200 μs and no constant external magnetic field Hex was applied during the measurement. [Figure 31] Figure 31 shows the dependence of the Hall resistance Rxy(Ohm) on the number of repetitions when pulse current is alternately applied in the ± direction in the absence of a magnetic field in demonstration example 11. [Figure 32] Figure 32 is a cross-sectional view of demonstration example 12. [Figure 33] Figure 33 shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 12. [Figure 34] Figure 34 shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 13. [Figure 35] Figure 35 shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 14. [Figure 36] Figure 36 shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 15. [Figure 37] Figure 37 shows the pulse current dependence of the Hall resistance Rxy(Ω) in demonstration example 16. [Figure 38] Figure 38 shows the dependence of the Hall resistance Rxy(Ohm) on the number of repetitions when pulse current is alternately applied in the ± direction in the absence of a magnetic field, in demonstration example 16. [Figure 39] Figure 39 shows the pulse current dependence of the Hall resistance Rxy(Ω) in Comparative Example 3. [Figure 40] Figure 40 is a cross-sectional view of Comparative Example 4. [Figure 41A] Figure 41A shows the pulse current dependence of the Hall resistance Rxy(Ω) in Comparative Example 4, obtained when a pulse current I was applied for 200 μs during measurement and a constant external magnetic field Hex29 mT was applied in the direction of the pulse current I (φ=0 degree direction in Figure 18). [Figure 41B] Figure 41B shows the pulse current dependence of the Hall resistance Rxy(Ω) in Comparative Example 4, when a pulse current I was applied for 200 μs during measurement and no constant external magnetic field Hex was applied. [Figure 41C] Figure 41C shows the pulse current dependence of the Hall resistance Rxy(Ω) in Comparative Example 4, obtained when a pulse current I was applied for 200 μs during measurement and a constant external magnetic field Hex-27 mT was applied in the direction of the pulse current I (φ=0 degree direction in Figure 18). [Modes for carrying out the invention]

[0012] Embodiments of the present invention will be described in detail below with reference to the drawings. The matters described in the embodiments of the present invention can be appropriately modified without changing the scope of the present invention.

[0013] [First Embodiment] Figure 1A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to the first embodiment of the present invention, and Figure 1B is a cross-sectional view along line AA. As shown in Figures 1A and 1B, the magnetic multilayer film 10 according to the first embodiment of the present invention is composed of a base layer 11 provided on a substrate (not shown), a first ferromagnetic layer 12 provided on the base layer 11, a first non-magnetic layer 13 provided on the first ferromagnetic layer 12, an interlayer bonding layer 14 provided on the first non-magnetic layer 13, a second non-magnetic layer 15 provided on the interlayer bonding layer 14, and a second ferromagnetic layer 16 provided on the second non-magnetic layer 15. That is, the magnetic multilayer film 10 is configured as follows. The first non-magnetic layer 13 and the second non-magnetic layer 15 are in contact with the corresponding upper and lower surfaces of the interlayer coupling layer 14, sandwiching the interlayer coupling layer 14. The first ferromagnetic layer 12 and the second ferromagnetic layer 16 are in contact with the corresponding lower surface of the first non-magnetic layer 13 and the upper surface of the second non-magnetic layer 15, sandwiching the first non-magnetic layer 13, the interlayer coupling layer 14, and the second non-magnetic layer 15. The first ferromagnetic layer 12 is provided in contact with the lower surface of the first non-magnetic layer 13, and the second ferromagnetic layer 16 is provided in contact with the upper surface of the second non-magnetic layer 15. In the illustrated example, a recording layer 17 made of a magnetization-reversible material is formed on the second ferromagnetic layer 16. In the first embodiment, the antiferromagnetic coupling layer 10a is composed of the first non-magnetic layer 13, the interlayer coupling layer 14, and the second non-magnetic layer 15. The interlayer coupling layer 14 may also be called an interlayer coupling nonmagnetic layer. The antiferromagnetic coupling layer 10a comprises a first nonmagnetic layer 13, an interlayer coupling nonmagnetic layer (interlayer coupling layer 14) provided on the first nonmagnetic layer 13, and a second nonmagnetic layer 15 provided on the interlayer coupling nonmagnetic layer.

[0014] Figure 2A is a diagram illustrating the state in which data "0" is written to the recording layer 17 by passing an electric current through the magnetic multilayer film 10 according to the first embodiment of the present invention. As shown in Figure 2A, before passing an electric current in the -x direction, the magnetization of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 are in opposite directions. When an electric current is passed through the magnetic multilayer film 10 in the -x direction, a spin current (flow of spin motion) is generated by the spin Hall effect due to spin interaction, and the spins that are in opposite directions flow in the corresponding directions in the ±z direction of each magnetic multilayer film 10. The spin current flowing through the magnetic multilayer film 10 separates the spins that are oriented in one direction from the spins that are oriented in the other direction, and the spins accumulate at the interface between the first ferromagnetic layer 12 and the first non-magnetic layer 13, and at the interface between the second non-magnetic layer 15 and the second ferromagnetic layer 16, and are absorbed by the first ferromagnetic layer 12 and the second ferromagnetic layer 16, respectively. Therefore, as shown in Figure 2A, the magnetizations M1 and M2 of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 are reversed compared to before the current I was applied. In this way, by applying a current in the -x direction to the magnetic multilayer film 10, a spin-orbit torque is generated by the current, causing the magnetizations of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 to reverse.

[0015] In the first embodiment of the present invention, the magnetic multilayer film 10 has an interlayer coupling layer 14 sandwiching the first non-magnetic layer 13 and the second non-magnetic layer 15. Compared to the case where there is no interlayer coupling layer, the spin torque is larger, and the magnetization of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 can be reversed. According to the first embodiment of the present invention, the magnetic multilayer film 10 shown in Figure 2A has two ferromagnetic layers that are antiferromagnetically coupled, so the thermal stability constant Δ can be increased. In addition, in conventional SOT elements, since there was no first ferromagnetic layer 12 at the bottom, only the spin current accumulated at the interface between the second ferromagnetic layer 16 and the second non-magnetic layer 15 was utilized for magnetization reversal. In the laminated structure according to the first embodiment of the present invention, both the spin current accumulated at the interface between the second ferromagnetic layer 16 and the second non-magnetic layer 15, which is generated when an electric current pulse is applied, and the spin current accumulated at the interface between the first ferromagnetic layer 12 and the first non-magnetic layer 13 can be utilized, making it possible to double the energy efficiency of the reversal.

[0016] If, for example, the magnetic multilayer film 10 lacks the first non-magnetic layer 13 and the second non-magnetic layer 15, and the interlayer coupling layer 14 is directly sandwiched between the first ferromagnetic layer 12 and the second ferromagnetic layer 16, then even if the interlayer coupling layer 14 is made of Ru or Ir and antiferromagnetic coupling is achieved, it is extremely difficult to achieve magnetization reversal due to the spin Hall effect because the spin Hall angles of Ru and Ir are very small. However, in this structure, the large spin Hall effect of the first non-magnetic layer 13 and the second non-magnetic layer 15 can be utilized, so the spin reversal current can be significantly reduced compared to when the first non-magnetic layer 13 and the second non-magnetic layer 15 are absent.

[0017] Figure 2B is a diagram illustrating the state in which data "1" is written to the recording layer 17 by passing an electric current in the reverse direction through the magnetic multilayer film 10 according to the first embodiment of the present invention. As shown in Figure 2B, before passing an electric current in the reverse direction in the +x direction, the magnetization of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 are in opposite directions. When an electric current is passed through the magnetic multilayer film 10 in the +x direction, a spin current (flow of spin motion) is generated by the spin Hall effect due to spin interaction, and the spins which are in opposite directions flow in the corresponding directions in the ±z direction of each magnetic multilayer film 10 (here, in the opposite direction compared to the case in Figure 2A), and the spin current flowing through the magnetic multilayer film 10 separates the spins that are oriented in one direction from the spins that are oriented in the other direction, and these separate and flow towards the first ferromagnetic layer 12 and the second ferromagnetic layer 16, respectively. Therefore, as shown in Figure 2B, the magnetizations M1 and M2 of the first ferromagnetic layer 12 and the second ferromagnetic layer 16, respectively, are reversed compared to before the current was passed in the +x direction. In this way, by passing a current in the +x direction through the magnetic multilayer film 10, a spin-orbit torque is generated by the current, causing the magnetizations of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 to reverse.

[0018] Here, just as antiferromagnetic coupling is maintained in the magnetic multilayer film of the first ferromagnetic layer / interlayer bonding layer / second ferromagnetic layer, antiferromagnetic coupling is also maintained when the interlayer bonding layer 14 is sandwiched between the first non-magnetic layer 13 and the second non-magnetic layer 15 to form the magnetic multilayer film 10, as in the first embodiment of the present invention. This will be explained in the demonstration example described later.

[0019] Figures 2A and 2B illustrate the case of in-plane magnetization, but the same principle applies to the case of perpendicular magnetization.

[0020] The explanation continues using a magnetoresistive element 1 as an example of one application of the magnetic multilayer film 10. The magnetic multilayer film 10 has a surface on which a read-only antiferromagnetic layer, which serves as a recording layer 17, is provided on a second ferromagnetic layer 16, and the recording layer 17 having reversible magnetization is provided. The read-only antiferromagnetic layer is preferably an Ir-Mn alloy, Fe-Mn alloy, etc. A barrier layer (also called a tunnel barrier layer) 18 is provided in contact with the recording layer 17. The barrier layer 18 is made of an insulating material such as MgO, Al2O3, AlN, MgAlO, etc., and is preferably epitaxially grown on the above Ir-Mn alloy, Fe-Mn alloy. A non-magnetic layer 19 is provided on the barrier layer 18 as a reference layer. The non-magnetic layer 19 is not particularly limited, but Pt, Al, Cu, etc. are preferred. A magnetoresistance element 1 utilizing the tunneling anisotropic magnetoresistance (TAMR) effect is constructed by stacking a recording layer 17, a barrier layer 18, and a non-magnetic layer 19. Here, the read antiferromagnetic layer, which serves as the recording layer 17, and the second ferromagnetic layer 16 are coupled by exchange coupling. Due to the reversal of magnetization in the second ferromagnetic layer 16, the antiferromagnetic moment in the read antiferromagnetic layer rotates, resulting in a significant difference in resistance.

[0021] A first terminal T1 and a second terminal T2 are provided on either the uppermost or lowermost surface of the magnetic multilayer film 10, and the first terminal T1 and the second terminal T2 are spaced apart in a direction perpendicular to the stacking direction of the magnetic multilayer film 10. A write current flows between the first terminal T1 and the second terminal T2. A cap layer 20 is provided on the non-magnetic layer 19 to provide a third terminal T3, and a read current can be passed through the third terminal T3. In Figure 1B, one end of transistor Tr1 is connected to the first terminal T1, and the second terminal T2 is grounded, and transistor Tr1 is turned ON to apply a write voltage V w By applying this voltage, current flows in the x direction. One end of transistor Tr3 is connected to the second terminal T2, and when transistor Tr3 is turned ON, the read voltage V Read By applying this voltage, current flows from the third terminal T3 to the second terminal T2.

[0022] Here, the read-only antiferromagnetic layer, which serves as the recording layer 17, and the second ferromagnetic layer 16 are coupled by exchange coupling. The reversal of magnetization in the second ferromagnetic layer 16 causes the antiferromagnetic moment in the read-only antiferromagnetic layer to rotate. As the direction of this antiferromagnetic moment changes, the resistance changes significantly, enabling reading from the recording layer 17.

[0023] Therefore, by passing current through the third terminal T3, the magnitude of the read current differs, and thus the read current of the recording layer 17 is different. strength It is possible to determine whether the data recorded on the magnetic layer is "0" or "1".

[0024] Next, the specific materials of the magnetic multilayer film 10 will be described. The interlayer bonding layer 14 is made of a metal or alloy containing at least one of Ir, Rh, or Ru. If it contains Ir, it is preferable to have a thickness in the range of 0.4 nm to 0.7 nm. If it contains Ru, it is preferable to have a thickness in the range of 0.6 nm to 0.9 nm. The interlayer bonding layer 14 is preferably made of a metal or alloy having an fcc structure containing at least one of Ir or Rh. It is particularly preferable that the interlayer bonding layer 14 is made of a metal or alloy having an fcc structure containing any of Ir, Ir-Os alloy, Rh, Ir-Rh alloy, Ir-Re alloy, or Ir-Ru alloy.

[0025] The first non-magnetic layer 13 and the second non-magnetic layer 15 are made of a metal or alloy containing Pt. Preferably, the first non-magnetic layer 13 and the second non-magnetic layer 15 are made of a metal or alloy having an fcc structure containing Pt. Particularly preferred are the first non-magnetic layer 13 and the second non-magnetic layer 15 to be selected from any of the following metals or alloys having an fcc structure: Pt, Pt-Au alloy, Pt-Ir alloy, Pt-Cu alloy, and Pt-Cr alloy. The first non-magnetic layer 13 and the second non-magnetic layer 15 may also be a Pt-Pd alloy, a Pt-Hf alloy, or a Pt-Al alloy.

[0026] In the magnetic multilayer film 10 according to the first embodiment of the present invention, even though the interlayer bonding layer 14 is sandwiched between the first non-magnetic layer 13 and the second non-magnetic layer 15, the first ferromagnetic layer 12 and the second ferromagnetic layer 16 are antiferromagnetically coupled. Therefore, the magnetic multilayer film 10 itself does not generate a leakage magnetic field and has good thermal stability. To form a more complete antiferromagnetic coupling, it is preferable that the first ferromagnetic layer 12 and the second ferromagnetic layer 16 have equal thickness.

[0027] As described above, using such a magnetic multilayer film 10 as the write control layer for the magnetoresistive element 1 using SOT further improves the writing efficiency. In addition, using such a magnetic multilayer film 10 in which antiferromagnetic coupling is maintained improves the writing speed.

[0028] In the magnetoresistive element 1 according to the first embodiment of the present invention, a reading layer 17 is provided on the second ferromagnetic layer 16, which is coupled by exchange interaction. strength Magnetic layer and readout reverse strength The device is constructed with a barrier layer 18 provided on the magnetic layer and a fixed layer consisting of a non-magnetic layer 19. The recording layer 17 is coupled to the magnetization of the second ferromagnetic layer 16 by exchange interaction, so no leakage magnetic field is generated. Therefore, the magnetoresistive element 1 itself does not generate a leakage magnetic field. Furthermore, since thermal stability is determined by the volume of the magnetic material in the magnetic multilayer film 10, it can be seen that the thermal stability is much better than that of a readout element including the recording layer 17, barrier layer 18, non-magnetic layer 19 as a reference layer, cap layer 20, and terminal T3, as shown in Figure 1B, because the volume of the magnetic material is contained within the entire lower electrode.

[0029] Therefore, on at least one magnetic laminated film 10, a readout layer is provided as a recording layer 17. strength By arranging multiple stacks of fixed layers consisting of a magnetic layer, a barrier layer 18, and a non-magnetic layer 19, erroneous writing and reading due to leakage magnetic fields are reduced as much as possible, even when integrated as a magnetic memory device such as MRAM.

[0030] In the magnetic multilayer film 10 and magnetoresistive element 1 according to the first embodiment, the first ferromagnetic layer 12 and the second ferromagnetic layer 16 may be either in-plane magnetized or perpendicularly magnetized. In the case of in-plane magnetization, as shown in Figure 2A, the easy magnetization axis is not limited to a direction perpendicular to the direction of the current I, and the easy magnetization axis may be in the x direction, the y direction, or the xy direction tilted in the x and y directions within the xy plane. That is, it may be type Y where the easy magnetization axis and spin are parallel / antiparallel, or type X, type Z, etc., where the easy magnetization direction and spin are orthogonal.

[0031] [Second Embodiment] Figure 3A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to a second embodiment of the present invention, and Figure 3B is a cross-sectional view along line BB. The magnetic multilayer film 10 according to the second embodiment of the present invention has the same configuration as the first embodiment, and therefore produces the same effects as the first embodiment. A detailed explanation is omitted to avoid redundancy.

[0032] In the second embodiment, a recording layer 28, which includes a ferromagnetic layer, is provided on a second ferromagnetic layer 16 with a non-magnetic layer 27 in between, thereby separating the crystal structures of the recording layer 28 and the second ferromagnetic layer 16. The ferromagnetic layer as the recording layer 28 is composed of CoFeBo, FeB, CoB, etc. A barrier layer 29 is provided so as to be in contact with the reference layer 30. The non-magnetic layer 31 is provided on the opposite side of the reference layer 30 from the barrier layer 29, separating the crystal structures of the layers above and below the non-magnetic layer 31. One or more elements are selected from W, Ta, Mo, Hf, etc. for the non-magnetic layer 27 and the non-magnetic layer 31.

[0033] Furthermore, on the side opposite the reference layer 30, across the non-magnetic layer 31, for example, in the case of a perpendicular magnetization film, (Co / Pt) m / Ir / (Co / Pt) n In the case of an in-plane magnetized film, a fixing layer 32 made of CoFe / Ru / CoFe / IrMn is provided, fixing and pinning the magnetization direction of the ferromagnetic layer in the reference layer 30. In such cases, the ferromagnetic layer and the fixing layer together may be called the reference layer. The above m and n are arbitrary natural numbers. A cap layer 33 is provided on the opposite side of the fixing layer 32 from the non-magnetic layer 31, and a third terminal T3 is attached to the cap layer 33. The third terminal T3 is connected to a transistor Tr3.

[0034] In the magnetoresistive element 2 according to the second embodiment of the present invention, a ferromagnetic layer is provided on a second ferromagnetic layer 16 as a recording layer 28 coupled by exchange interaction, a barrier layer 29 is provided on the recording layer 28, and a reference layer 30 is provided, making it a so-called MTJ element.

[0035] A first terminal T1 and a second terminal T2 are provided on either the uppermost or lowermost surface of the magnetic multilayer film 10, and the first terminal T1 and the second terminal T2 are spaced apart in a direction perpendicular to the stacking direction of the magnetic multilayer film 10. A writing current flows between the first terminal T1 and the second terminal T2.

[0036] In the magnetic multilayer film 10 according to the second embodiment, data can be written by passing a current between the first terminal T1 and the second terminal T2, as in the first embodiment, so no explanation is given. When reading data, by passing a current through the third terminal T3, it is possible to determine whether the magnetization of the recording layer 28 is parallel or antiparallel to the magnetization of the reference layer 30 from the magnitude of the currents flowing through the recording layer 28, barrier layer 29, and reference layer 30 that constitute the MTJ element, and the data can be read.

[0037] In the magnetic multilayer film 10 according to the second embodiment of the present invention, even though the interlayer coupling layer 14 is sandwiched between the first non-magnetic layer 13 and the second non-magnetic layer 15, the first ferromagnetic layer 12 and the second ferromagnetic layer 16 are antiferromagnetically coupled. Therefore, the magnetic multilayer film 10 itself does not generate a leakage magnetic field. Because there are two ferromagnetic layers and they are antiferromagnetically coupled, the thermal stability constant Δ can be increased. Furthermore, in conventional SOT elements, since there was no first ferromagnetic layer 12 at the bottom, only the spin current accumulated at the interface between the second ferromagnetic layer 16 and the second non-magnetic layer 15 was utilized for magnetization reversal. In this element structure, not only the spin current accumulated at the interface between the second ferromagnetic layer 16 and the second non-magnetic layer 15 generated when a current pulse is applied, but also the spin current accumulated at the interface between the first ferromagnetic layer 12 and the first non-magnetic layer 13 can be utilized, making it possible to double the energy efficiency of the reversal. Furthermore, this structure utilizes the large spin Hall effect of the first non-magnetic layer 13 and the second non-magnetic layer 15, thereby significantly reducing the spin reversal current compared to when the first non-magnetic layer 13 and the second non-magnetic layer 15 are absent. To form a more complete antiferromagnetic coupling, it is preferable that the first ferromagnetic layer 12 and the second ferromagnetic layer 16 have equal thickness.

[0038] By using such a magnetic multilayer film 10 as the write control layer for the magnetoresistive element 2 using SOT, the writing efficiency is further improved. By using such a magnetic multilayer film 10 in which antiferromagnetic coupling is maintained, the writing speed is improved.

[0039] In the magnetoresistive element 2 according to the second embodiment of the present invention, a ferromagnetic layer as a recording layer 28 coupled by exchange interaction on a second ferromagnetic layer 16, a barrier layer 29 provided on the recording layer 28, and a reference layer 30 are configured as a so-called MTJ element. Figure 3C is a cross-sectional view of the magnetic multilayer film 10 and magnetoresistive element 2 according to the second embodiment of the present invention from another viewpoint. As shown in Figure 3C, as a structure that further eliminates leakage magnetic fields, it is preferable to make the layers up to the recording layer 28 the magnetic multilayer film 10, and to cancel out the magnetization values ​​of the first ferromagnetic layer 12 and the second ferromagnetic layer 16 / non-magnetic layer 27 / recording layer 28. Figure 3D is a cross-sectional view of the magnetic multilayer film 10 and magnetoresistive element 2 according to the second embodiment of the present invention. As shown in Figure 3D, the entire recording layer structure of Co layer 34 / Ir layer 35 / Co layer 36 / non-magnetic layer 27 / recording layer 28, which has an antiferromagnetic coupling structure, may be made into a recording layer 28A. The Co layers 34 and 36 may be ferromagnetic layers other than Co. The Ir layer 35 is not limited to the interlayer bonding layer material; for example, a Ru layer may also be used. The reference layer 30 and the fixing layer 32 can be made to not generate a leakage magnetic field by adjusting the thickness of the films that constitute them. Therefore, the magnetoresistive element 2 itself does not generate a leakage magnetic field.

[0040] Therefore, by arranging multiple so-called MTJ elements, each having a ferromagnetic layer as a recording layer 28, a barrier layer 29 provided on the recording layer 28, and a reference layer 30, on at least one magnetic multilayer film 10, erroneous writing and reading due to leakage magnetic fields can be reduced as much as possible even when integrated as a magnetic memory device such as MRAM.

[0041] In the magnetic multilayer film 10 and magnetoresistive element 2 according to the second embodiment, the first ferromagnetic layer 12, the second ferromagnetic layer 16, the recording layer 28, and the reference layer 30 may be either in-plane magnetized or perpendicularly magnetized. In the case of in-plane magnetization, the direction of magnetization is not limited to the direction perpendicular to the direction of the current I, but may be in the x-direction, the y-direction, or even within the xy-plane. That is, it may be type Y where the easy magnetization axis and spin are parallel / antiparallel, or type X, type Z, etc., where the easy magnetization direction and spin are orthogonal.

[0042] [Third Embodiment] Figure 4A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to a third embodiment of the present invention, and Figure 4B is a cross-sectional view along the CC line. As shown in Figures 4A and 4B, the magnetic multilayer film 40 according to the third embodiment of the present invention is composed of a base layer 41 provided on a substrate (not shown), a first ferromagnetic layer 42 provided on the base layer 41, an interlayer bonding layer 43 provided on the first ferromagnetic layer 42, a first non-magnetic layer 44 provided on the interlayer bonding layer 43, and a second ferromagnetic layer 45 provided on the first non-magnetic layer 44. That is, the magnetic multilayer film 40 is configured as follows. The interlayer coupling layer 43 and the first non-magnetic layer 44 are in contact with each other, the first ferromagnetic layer 42 is in contact with the lower surface of the interlayer coupling layer 43, and the second ferromagnetic layer 45 is in contact with the upper surface of the first non-magnetic layer 44, with the first ferromagnetic layer 42 and the second ferromagnetic layer 45 sandwiching the interlayer coupling layer 43 and the first non-magnetic layer 44, with the first ferromagnetic layer 42 being in contact with the lower surface of the interlayer coupling layer 43 and the second ferromagnetic layer 45 being in contact with the upper surface of the first non-magnetic layer 44. In other words, the non-magnetic layer is a single layer rather than two layers, as in the magnetic multilayer film 10 according to the first embodiment. In the illustrated example, a recording layer 17 made of a magnetization-reversible material is formed on the second ferromagnetic layer 45. In the third embodiment, the interlayer coupling layer 43 and the first non-magnetic layer 44 constitute an antiferromagnetic coupling layer 40a. The interlayer bonding layer 43 may also be called the interlayer bonding nonmagnetic layer. The interlayer bonding layer 43 and the first nonmagnetic layer 44 may be reversed vertically. The first nonmagnetic layer 44 may also simply be called the nonmagnetic layer 44.

[0043] Figure 5A is a diagram illustrating the state in which data "0" is written to the recording layer 17 by passing an electric current through the magnetic multilayer film 40 according to the third embodiment of the present invention. As shown in Figure 5A, before passing an electric current in the -x direction, the magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 are in opposite directions. When an electric current is passed through the magnetic multilayer film 40 in the -x direction, a spin current (flow of spin motion) is generated by the spin Hall effect due to spin interaction, and the spins that are in opposite directions flow in the corresponding directions in the ±z direction of each magnetic multilayer film 40, and the spin current flowing through the magnetic multilayer film 40 separates the spins that are oriented in one direction from the spins that are oriented in the other direction, and these spins accumulate at the interface between the first ferromagnetic layer 42 and the interlayer coupling layer 43, and at the interface between the first non-magnetic layer 44 and the second ferromagnetic layer 45, and are absorbed by the second ferromagnetic layer 45. Therefore, as shown in Figure 5A, the first ferromagnetic layer 42 , second ferromagnetic layer 45 The magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 are reversed in direction compared to before the current was passed in the -x direction. In this way, by passing a current in the -x direction through the magnetic multilayer film 40, a spin-orbit torque is generated by the current, and the magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 are reversed.

[0044] In the magnetic multilayer film 40 according to the third embodiment of the present invention, the second ferromagnetic layer 45 is in contact with the first non-magnetic layer 44 which has a large spin Hall angle. As a result, the spin torque is increased compared to the case where the first non-magnetic layer 44 is not provided, and the magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 can be reversed simultaneously.

[0045] If, for example, the magnetic multilayer film 40 does not have a first non-magnetic layer 44, and the interlayer coupling layer 43 is directly sandwiched between the first ferromagnetic layer 42 and the second ferromagnetic layer 45, then even if the interlayer coupling layer 43 is made of Ru or Ir and antiferromagnetic coupling is achieved, it is extremely difficult to achieve magnetization reversal due to the spin Hall effect because the spin Hall angles of Ru and Ir are very small.

[0046] Figure 5B is a diagram illustrating the state in which data "1" is written to the recording layer 17 by passing an electric current in the reverse direction through the magnetic multilayer film 40 according to the third embodiment of the present invention. As shown in Figure 5B, before passing an electric current in the reverse direction in the +x direction, the magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 are in opposite directions. When an electric current is passed through the magnetic multilayer film 40 in the +x direction, a spin current (flow of spin motion) is generated by the spin Hall effect due to spin interaction, and the spins that are in opposite directions flow in the corresponding directions in the ±z direction of each magnetic multilayer film 40 (here, in the opposite direction compared to the case in Figure 5A). The spin current flowing through the magnetic multilayer film 40 separates the spins that are oriented in one direction from the spins that are oriented in the other direction, and these separate and flow upward and downward. They accumulate at the interface between the first ferromagnetic layer 42 and the interlayer coupling layer 43, and at the interface between the first non-magnetic layer 44 and the second ferromagnetic layer 45, and are absorbed by the first ferromagnetic layer 42 and the second ferromagnetic layer 45. Therefore, as shown in Figure 5B, the magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 are reversed compared to before the current was applied in the +x direction. In this way, by applying a current in the +x direction to the magnetic multilayer film 40, a spin-orbit torque is generated by the current, causing the magnetization of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 to reverse.

[0047] Here, compared to the case where antiferromagnetic coupling is maintained in the magnetic multilayer film of the first ferromagnetic layer / interlayer bonding layer / second ferromagnetic layer, antiferromagnetic coupling is maintained even when the magnetic multilayer film 40 is configured such that the interlayer bonding layer 43 and the first non-magnetic layer 44 are in contact with each other, as in the third embodiment of the present invention. This will be explained in the demonstration example described later. This is because the antiferromagnetic coupling generated by the RKKY interaction due to the spanning vector qs in the

[0111] direction of the Fermi surface of Ir is the same fcc structure in Pt, and therefore the topological structure of the Fermi surface is equivalent, and thus the RKKY interaction is maintained.

[0048] Figures 5A and 5B illustrate the case of in-plane magnetization, but the same applies to the case of perpendicular magnetization. In the case of in-plane magnetization, the direction of magnetization is not limited to the direction perpendicular to the direction of the current I, but can be in the x direction, the y direction, or even within the xy plane. That is, it can be type Y, where the easy magnetization axis and spin are parallel / antiparallel, or type X, type Z, etc., where the easy magnetization direction and spin are orthogonal.

[0049] As one application of the magnetic multilayer film 40, we will continue the explanation using the magnetoresistive element 3 as an example. In the third embodiment, the magnetic multilayer film 40 is placed on the second ferromagnetic layer 45 as a recording layer 17 for readout strength A recording layer 17 having a magnetic layer and a reversible magnetization is provided on a surface on which a magnetic layer is provided. The readout antiferromagnetic layer is preferably an Ir-Mn alloy, Fe-Mn alloy, etc. A barrier layer (also called a tunnel barrier layer) 18 is provided in contact with the recording layer 17. The barrier layer 18 is preferably an insulating material such as MgO, Al2O3, AlN, or MgAlO. A non-magnetic layer 19 is provided on the barrier layer 18 as a reference layer. There are no particular restrictions on the non-magnetic layer 19, but Pt, Cu, Al, etc. are preferred. By laminating the recording layer 17, the barrier layer 18 and the non-magnetic layer 19, a magnetoresistance effect element 3 using the tunnelling anisotropic magnetoresistance (TAMR) effect is constructed. Here, the read-only antiferromagnetic layer, which serves as the recording layer 17, and the second ferromagnetic layer 45 are coupled by exchange coupling. Due to the reversal of magnetization in the second ferromagnetic layer 45, the antiferromagnetic moment in the read-only antiferromagnetic layer rotates, resulting in a significant difference in resistance.

[0050] A first terminal T1 and a second terminal T2 are provided on either the uppermost or lowermost surface of the magnetic multilayer film 40, and the first terminal T1 and the second terminal T2 are spaced apart in a direction perpendicular to the stacking direction of the magnetic multilayer film 40. A write current flows between the first terminal T1 and the second terminal T2. A cap layer 20 is provided on the non-magnetic layer 19, and a third terminal T3 is provided therein, allowing a read current to flow through the third terminal T3.

[0051] Next, the specific materials of the magnetic multilayer film 40 will be described. The interlayer bonding layer 43 is made of a metal or alloy containing at least one of Ir, Rh, or Ru. If it contains Ir, it is preferable to have a thickness in the range of 0.4 nm to 0.7 nm. If it contains Ru, it is preferable to have a thickness in the range of 0.6 nm to 0.9 nm. It is preferable that the interlayer bonding layer 43 is made of a metal or alloy having an fcc structure containing at least one of Ir or Rh. It is particularly preferable that the interlayer bonding layer 43 is made of a metal or alloy having an fcc structure containing any of Ir, Ir-Os alloy, Rh, Ir-Rh alloy, Ir-Re alloy, or Ir-Ru alloy.

[0052] The first non-magnetic layer 44 is made of a metal or alloy containing Pt. Preferably, the first non-magnetic layer 44 is made of a metal or alloy having an fcc structure containing Pt. Particularly preferred is that the first non-magnetic layer 44 is selected from metals and alloys having an fcc structure, such as Pt, Pt-Au alloy, Pt-Ir alloy, Pt-Cu alloy, or Pt-Cr alloy. The first non-magnetic layer 44 may also be a Pt-Pd alloy, Pt-Hf alloy, or Pt-Al alloy.

[0053] In the magnetic multilayer film 40 according to the third embodiment of the present invention, the first non-magnetic layer 44 and the interlayer coupling layer 43 are arranged to be in contact with each other, thereby antiferromagnetic coupling between the first ferromagnetic layer 42 and the second ferromagnetic layer 45. As a result, the magnetic multilayer film 40 itself does not generate a leakage magnetic field. Because there are two ferromagnetic layers and they are antiferromagnetically coupled, the thermal stability constant Δ can be increased. Furthermore, in conventional SOT elements, since there was no first ferromagnetic layer 42 at the bottom, only the spin current accumulated at the interface between the second ferromagnetic layer 45 and the first non-magnetic layer 44 was utilized for magnetization reversal. In this element structure, not only the spin current accumulated at the interface between the second ferromagnetic layer 45 and the first non-magnetic layer 44 when a current pulse is applied, but also the spin current accumulated at the interface between the first ferromagnetic layer 42 and the interlayer coupling layer 43 can be utilized, making it possible to double the energy efficiency of the reversal. Furthermore, this structure utilizes the large spin Hall effect of the first non-magnetic layer 44, which significantly reduces the spin reversal current compared to when the first non-magnetic layer 44 is absent. To form a more complete antiferromagnetic coupling, it is preferable that the first ferromagnetic layer 42 and the second ferromagnetic layer 45 have equal thickness.

[0054] By using such a magnetic multilayer film 40 as the write control layer for the magnetoresistive element 3 using SOT, the writing efficiency is further improved. By using such a magnetic multilayer film 40 in which antiferromagnetic coupling is maintained, the writing speed is improved.

[0055] In the magnetoresistive element 3 according to the third embodiment of the present invention, a reading layer 17 is provided on the second ferromagnetic layer 45, which is coupled by exchange interaction. strength Magnetic layer and readout reverse strength The magnetoresistive element 3 is composed of a barrier layer 18 and a non-magnetic layer 19 provided on the magnetic layer. The recording layer 17 is coupled to the magnetization of the second ferromagnetic layer 45 by exchange interaction. Therefore, since the magnetoresistive element 3 itself is composed entirely of non-magnetic materials, no leakage magnetic field is generated.

[0056] Therefore, on at least one magnetic laminated film 40, a readout layer is provided as a recording layer 17. strength By arranging multiple stacks of fixed layers consisting of a magnetic layer, a barrier layer 18, and a non-magnetic layer 19, erroneous writing and reading due to leakage magnetic fields are reduced as much as possible, even when integrated as a magnetic memory device such as MRAM.

[0057] In the magnetic multilayer film 40 and magnetoresistive element 3 according to the third embodiment, the first ferromagnetic layer 42 and the second ferromagnetic layer 45 may be either in-plane magnetized or perpendicularly magnetized. In the case of in-plane magnetization, the direction of magnetization is not limited to a direction perpendicular to the direction of the current I, but may be in the x direction, the y direction, or even within the xy plane. That is, it may be type Y where the easy magnetization axis and spin are parallel / antiparallel, or type X, type Z, etc., where the easy magnetization direction and spin are orthogonal.

[0058] [Fourth Embodiment] Figure 6A is a plan view of a magnetic multilayer film and a magnetoresistive element using the same according to the fourth embodiment of the present invention, and Figure 6B is a cross-sectional view along the DD line. The magnetic multilayer film 40 according to the fourth embodiment of the present invention has the same configuration as the third embodiment. Therefore, in the magnetic multilayer film 40 according to the fourth embodiment of the present invention, the interlayer coupling layer 43 and the first non-magnetic layer 44 are provided in contact with each other, thereby antiferromagnetic coupling of the first ferromagnetic layer 42 and the second ferromagnetic layer 45. As a result, the magnetic multilayer film 40 itself does not generate a leakage magnetic field. Thus, it has good thermal stability. In order to form a more complete antiferromagnetic coupling, it is preferable that the first ferromagnetic layer 42 and the second ferromagnetic layer 45 have the same thickness. By using such a magnetic multilayer film 40 as the write control layer of the magnetoresistive element 4 using SOT, the writing efficiency is further improved. By using such a magnetic multilayer film 40 in which antiferromagnetic coupling is maintained, the writing speed is improved. A detailed explanation is the same as in the third embodiment and is therefore omitted.

[0059] In the fourth embodiment, the non-magnetic layer 27, recording layer 28, barrier layer 29, reference layer 30, non-magnetic layer 31, fixing layer 32, cap layer 33, and third terminal T3 provided on the magnetic multilayer film 40 are configured the same as in the second embodiment, as are the first terminal T1, second terminal T2, third terminal T3, and each transistor Tr1, Tr2, Tr3, and thus the same effects as in the second embodiment are produced. It is configured as a so-called MTJ element having a ferromagnetic layer as a recording layer 28 coupled by exchange interaction on the second ferromagnetic layer 45, a barrier layer 29 provided on the recording layer 28, and a reference layer 30. Since the recording layer 28 is coupled with the magnetization of the second ferromagnetic layer 45 by exchange interaction, it is possible to have a structure that does not generate a leakage magnetic field. Figure 6C is a cross-sectional view of the magnetic multilayer film 40 and magnetoresistive element 4 according to the fourth embodiment of the present invention from another viewpoint. As shown in Figure 6C, a structure that further eliminates leakage magnetic fields is preferably made of magnetic multilayer films 40 up to the recording layer 28, and the magnetization values ​​of the first ferromagnetic layer 42 and the second ferromagnetic layer 45 / non-magnetic layer 27 / recording layer 28 are canceled out. Figure 6D is another cross-sectional view of the magnetic multilayer film 40 and magnetoresistive element 4 according to the fourth embodiment of the present invention. As shown in Figure 6D, the entire recording layer structure of Co layer 34 / Ir layer 35 / Co layer 36 / non-magnetic layer 27 / recording layer 28, which has an antiferromagnetic coupling structure, may be made into recording layer 28A. The Co layers 34 and 36 may be ferromagnetic layers other than Co, and the Ir layer 35 may be made of interlayer coupling material such as a Ru layer. The reference layer 30 and the fixed layer 32 can be made to not generate leakage magnetic fields by adjusting the thickness of the films that constitute them. Therefore, the magnetoresistive element 4 itself does not generate leakage magnetic fields. Therefore, by arranging multiple so-called MTJ elements, each having a ferromagnetic layer as a recording layer 28, a barrier layer 29 provided on the recording layer 28, and a reference layer 30, on at least one magnetic multilayer film 40, erroneous writing and reading due to leakage magnetic fields can be reduced as much as possible even when integrated as a magnetic memory device such as MRAM. A detailed explanation is the same as in the second embodiment and will be omitted. In the magnetic multilayer film 40 and magnetoresistive element 4 according to the fourth embodiment, the first ferromagnetic layer 42, the second ferromagnetic layer 45, the recording layer 28, and the reference layer 30 may be either in-plane magnetized or perpendicularly magnetized.In the case of in-plane magnetization, the direction of magnetization is not limited to the direction perpendicular to the direction of the current I, but can be in the x-direction, the y-direction, or even within the xy-plane. That is, it can be type Y, where the easy magnetization axis and spin are parallel / antiparallel, or type X, type Z, etc., where the easy magnetization direction and spin are orthogonal.

[0060] [Other embodiments] The magnetic multilayer films 10 and 40 according to the embodiment of the present invention are not merely for use in magnetoresistive elements 1, 2, 3, and 4 using SOT, but can also be used in various elements and devices such as spintronic elements as materials and configurations that do not generate leakage magnetic fields due to antiferromagnetic coupling.

[0061] [Example of demonstration] As Demonstration Example 1, (Co1.3 / Pt0.8 / Ir0.5 / Pt0.8)2 / Co1.3 was formed on the underlying layer, and the magnetization was measured by changing the external magnetic field. Here, the number after the element symbol indicates the thickness in nanometers of the layer composed of that element; for example, Co1.3 means a Co layer of 1.3 nm. Figure 7 shows the magnetization curve of the sample from Demonstration Example 1, with the horizontal axis representing the external magnetic field H(Oe) and the vertical axis representing M / Ms. One magnetization curve represents the case when a perpendicular magnetic field is applied, and the other magnetization curve represents the case when an in-plane magnetic field is applied. When a perpendicular magnetic field was applied, it was found that antiferromagnetic coupling occurred at zero magnetic field.

[0062] As a second demonstration example, (Co1.3 / Pt1.0 / Ir0.5 / Pt1.0)2 / Co1.3 was formed on the underlying layer, and the magnetization was measured by changing the external magnetic field. Figure 8 shows the magnetization curve of the sample from demonstration example 2, with the horizontal axis representing the external magnetic field H(Oe) and the vertical axis representing the magnetization M / Ms. One magnetization curve represents the case when a perpendicular magnetic field is applied, and the other magnetization curve represents the case when an in-plane magnetic field is applied. When a perpendicular magnetic field was applied, it was found that antiferromagnetic coupling occurred at zero magnetic field.

[0063] As Demonstration Example 3, Co1.1 / Pt0.8 / Ir0.5 / Pt0.8 / Co1.1 was formed on the underlying layer, and the external magnetic field was changed to measure the magnetization. Fig. 9 is the magnetization curve of the sample of Demonstration Example 3, where the horizontal axis is the external magnetic field H (Oe) and the vertical axis is M / Ms. One of the magnetization curves is the case where the external magnetic field applies a perpendicular magnetic field, and the other magnetization curve is the case where the external magnetic field applies an in-plane magnetic field. When the perpendicular magnetic field was applied, it was found that there was an antiferromagnetic coupling.

[0064] As described above, by sandwiching an antiferromagnetic coupling layer composed of a Pt layer, an Ir layer, and a Pt layer between the upper and lower Co layers, it was found that the magnetization of one Co layer is opposite to the direction of the magnetization of the other Co layer.

[0065] Therefore, as Demonstration Example 4, a Pt layer was inserted into the Co layer / Ir layer / Co layer to investigate how the antiferromagnetic coupling of Ir changes. The thickness t_Ir of the Ir layer was set to 0.5 nm, 0.55 nm, and 1.4 nm, and the sum of the thicknesses of the Pt layer and the Ir layer, that is, the total film thickness of the non-magnetic layer, was adjusted in the range of 0.5 to 2.5 nm. There are cases where the non-magnetic layer is Ir / Pt, Pt / Ir / Pt, and only the Ir layer. The case of only the Ir layer is carried out as a comparative example. Also, when Pt layers are provided above and below the Ir layer, the thicknesses of the upper and lower Pt layers were made the same.

[0066] In each sample, the interlayer coupling force J ex (mJ / m 2 ) was measured. Table 1 summarizes the results.

[0067]

Table 1

[0068] Fig. 10 is a graph showing the dependence of the total film thickness t ex (nm) of the non-magnetic layer on the interlayer coupling force J 2 (mJ / m total (nm). From Fig. 10, by inserting a Pt layer into the Co / Ir / Co stack, the interlayer coupling force J indicating the magnitude of the antiferromagnetic coupling of Irex It was found that the concentration decreased monotonically as the non-magnetic layer thickness increased. Furthermore, it was confirmed that antiferromagnetic coupling occurred even when the total thickness of the Pt / Ir / Pt layer was 2.5 nm, and that antiferromagnetic coupled films could be continuously fabricated over a wide range of thicknesses from 1.5 to 2.5 nm. This indicates that RKKY interactions propagate in Pt, but RKKY oscillations do not occur.

[0069] As Demonstration Example 5, (Co1.3 / Pt0.6 / Ru0.7 / Pt0.6)2 / Co1.3 was formed on the underlying layer, and the magnetization was measured by changing the external magnetic field. Figure 11 shows the magnetization curve of the sample from Demonstration Example 5, with the horizontal axis representing the external magnetic field H(Oe) and the vertical axis representing M / Ms. Ms is the saturation magnetization. One magnetization curve represents the case when a perpendicular magnetic field is applied, and the other magnetization curve represents the case when an in-plane magnetic field is applied. When a perpendicular magnetic field was applied, it was found that antiferromagnetic coupling occurred at zero magnetic field.

[0070] As Demonstration Example 6, (Co1.3 / Pt0.8 / Ru0.7 / Pt0.8)2 / Co1.3 was formed on the underlying layer, and the magnetization was measured by changing the external magnetic field. Figure 12 shows the magnetization curve of the sample from Demonstration Example 6, with the horizontal axis representing the external magnetic field H(Oe) and the vertical axis representing M / Ms. Ms is the saturation magnetization. One magnetization curve represents the case when a perpendicular magnetic field is applied, and the other magnetization curve represents the case when an in-plane magnetic field is applied. When a perpendicular magnetic field was applied, it was found that antiferromagnetic coupling occurred at zero magnetic field.

[0071] As Demonstration Example 7, (Co1.3 / Pt0.7 / Ru0.7 / Pt0.7)2 / Co1.3 was formed on the underlying layer, and the magnetization was measured by changing the external magnetic field. Figure 13 shows the magnetization curve of the sample from Demonstration Example 7, with the horizontal axis representing the external magnetic field H(Oe) and the vertical axis representing M / Ms. Ms is the saturation magnetization. One of the magnetization curves represents the case when a perpendicular magnetic field is applied, and the other represents the case when an in-plane magnetic field is applied. When a perpendicular magnetic field was applied, it was found that antiferromagnetic coupling occurred at zero magnetic field.

[0072] As demonstration example 8, Co1.3 / Pt0.6 / Ru0.7 / Pt0.6 / Co1.3 was formed on the underlying layer, and the magnetization was measured by changing the external magnetic field. Figure 14 shows the magnetization curve of the sample from demonstration example 8, with the horizontal axis representing the external magnetic field H(Oe) and the vertical axis representing M / Ms. Ms is the saturation magnetization. One magnetization curve represents the case when a perpendicular magnetic field is applied, and the other magnetization curve represents the case when an in-plane magnetic field is applied. When a perpendicular magnetic field was applied, it was found that antiferromagnetic coupling occurred at zero magnetic field.

[0073] As shown above, by sandwiching an antiferromagnetic coupling layer consisting of a Pt layer, a Ru layer, and another Pt layer between the upper and lower Co layers, it was found that the magnetization of one Co layer is in the opposite direction to the magnetization of the other Co layer.

[0074] Therefore, as demonstration example 9, we investigated how the antiferromagnetic coupling of Ru changes when a Pt layer is inserted into a Co / Ru / Co layer. The thickness of the Ru layer t_Ru was set to 0.4 nm, 0.7 nm, and 0.8 nm, and the sum of the thicknesses of the Pt layer and the Ru layer, i.e., the total thickness of the non-magnetic layer, was adjusted in the range of 0.4 to 2.3 nm. The non-magnetic layer could be Ru / Pt, Pt / Ru / Pt, or a Ru layer only. The case with only a Ru layer was performed as a comparative example. In addition, when Pt layers were provided above and below the Ru layer, the thickness of the upper and lower Pt layers was made the same.

[0075] In each sample, the interlayer bonding force J ex (mJ / m 2 ) was measured. Table 2 This summarizes the results.

[0076] [Table 2]

[0077] Figure 15 shows the interlayer bonding force J. ex (mJ / m 2 ) Total thickness of the non-magnetic layer t totalThis graph shows the (nm) dependence. Figure 15 shows that by inserting a Pt layer into a Co / Ru / Co stack, the interlayer bonding force J, which indicates the magnitude of the antiferromagnetic coupling of Ru, is reduced. ex It was found that the amount of magnetic flux decreased monotonically as the thickness of the non-magnetic layer increased. Furthermore, it was confirmed that antiferromagnetic coupling occurred even when the total thickness of the Pt / Ru / Pt layer was 2.3 nm. Also, Pt / Ru It was revealed that antiferromagnetic coupled films can be continuously fabricated in Pt with a total film thickness ranging from 1.3 to 2.3 nm. Furthermore, it was shown that while RKKY interactions propagate in Pt, RKKY oscillations do not occur.

[0078] Figure 16 shows the interlayer bonding force J. ex This is the Ir thickness dependence. The horizontal axis is the Ir thickness (nm), and the vertical axis is the interlayer bonding force J. ex The black dots represent (Co / Pt). 4.5 / Ir / (Co / Pt) 4.5 The diamond plot relates to (Co / Pt / Ir)² / Co. The thickness of the Ir layer in each plot is t. Ir The intervals are 0.1 nm, such as 0.4 nm, 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1.0 nm, 1.1 nm, 1.2 nm, 1.3 nm, 1.4 nm, 1.5 nm, and 1.6 nm, with 0.55 nm also included in the rhombus plot. Interlayer bonding force J exIt was found that antiferromagnetic coupling is maintained even when a Pt layer is inserted as a non-magnetic layer between the interlayer coupling layer and the ferromagnetic layer. This suggests that because Ir and Pt have the same fcc structure, their topological properties of the Fermi surface are the same, and the RKKY interaction propagated. Furthermore, since no shift in the length and position of the antiferromagnetic oscillation period was observed, it became clear that there are no oscillations associated with the RKKY interaction in Pt. This is the reason why antiferromagnetic coupling was observed over a wide range of Pt / Ir / Pt total thicknesses from 1.5 nm to 2.5 nm, as mentioned above. It was found that the large spin Hall angle of Pt can be utilized up to a thick film thickness of 1.0 nm, which significantly improves the spin reversal efficiency. It was found that the thickness of the Ir layer is preferably in the range of 0.4 nm to 0.7 nm and 1.3 nm to 1.6 nm.

[0079] Figure 17 shows the interlayer bonding force J. ex This is the Ru thickness dependence. The horizontal axis is the Ru thickness (nm), and the vertical axis is the interlayer bonding force J. ex The black circle plot represents (Co / Pt / Ru)2 / Co, and the diamond plot represents (Co / Pt) 4.5 / Ru / (Co / Pt) 4.5 Regarding the thickness of the Ru layer t in each plot. Ru The thicknesses are 0.4nm, 0.5nm, 0.6nm, 0.7nm, 0.8nm, 0.9nm, 1.0nm, 1.1nm, 1.2nm, 1.4nm, 1.5nm, 1.6nm, 1.7nm, 1.8nm, 1.9nm, 2.0nm, 2.1nm, and 2.2nm. It was found that the vibrations caused by the interlayer interaction between Ru, corresponding to the period Λ1 of the antiferromagnetic distance, are eliminated by sandwiching Pt. Also, the thickness of Ru is related to the interlayer bonding force J. ex It was found that selecting the thickness that results in the second peak is sufficient. The Ru layer thickness was found to be preferably in the range of 0.6 nm to 0.9 nm and 1.7 nm to 2.2 nm.

[0080] Figure 18 is a schematic diagram showing the hole bar and measurement system fabricated as sample 29. Figure 19A is a cross-sectional view of the fabricated sample 29. As shown in Figure 19A, sample 29 consists of a Si substrate 101 with a thermal oxide film, a 2.0 nm thick Ta layer 102 on the thermal oxide film, a 2.0 nm thick Ir layer 103 on the Ta layer 102, a 1.1 nm thick Co layer 104 on the Ir layer 103, a 0.8 nm thick Pt layer 105 on the Co layer 104, and a thick layer on the Pt layer 105. It is composed of a 0.5 nm thick Ir layer 106, a 0.8 nm thick Pt layer 107 provided on the Ir layer 106, a 1.1 nm thick Co layer 108 provided on the Pt layer 107, a 0.5 nm thick Ir layer 109 provided on the Co layer 108, a 1.5 nm thick MgO layer 110 provided on the Ir layer 109, and a 1.0 nm thick Ta layer 111 provided on the MgO layer 110.

[0081] Figure 19B is a cross-sectional view of the sample prepared in Comparative Example 2. Another comparative sample, as shown in Figure 19B, consisted of a Si substrate 121 with a thermal oxide film, a 3.0 nm thick Ta layer 122 on the thermal oxide film, a 7.2 nm thick Pt layer 123 on the Ta layer 122, a 1.3 nm thick Co layer 124 on the Pt layer 123, a 0.6 nm thick Ir layer 125 on the Co layer 124, a 0.6 nm thick Pt layer 126 on the Ir layer 125, and a 3.0 nm thick Ta layer 127 on the Pt layer 126.

[0082] Sample 29 and Comparative Example 2 were processed into Hole bars as shown in Figure 18 using photolithography and Ar ion milling. A pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I.

[0083] Figure 20 shows the pulse current dependence of the Hall resistance Rxy (Ω) of the samples in Sample 29 and Comparative Example 2. The horizontal axis represents the pulse current I (mA), and the vertical axis represents the Hall resistance Rxy (Ω). The results were obtained when a pulse current I was applied for 200 μs and a constant external magnetic field Hex of -26 mT was applied in the direction of the pulse current I (φ=0 degree direction in Figure 18). An increase in Hall resistance Rxy was observed at a certain current value when the pulse current was applied in the + direction, and a decrease in Hall resistance Rxy was observed at a certain current value when the pulse current was applied in the - direction, indicating that the magnetic moment of the Co layer 104 was undergoing magnetization reversal with the pulse current.

[0084] By comparing the absolute values ​​of the reversal currents for Sample 29 and the comparison sample, it was found that the writing current (reversal current) when using the Co / Pt / Ir / Pt / Co antiferromagnetic coupling film was halved compared to the writing current (reversal current) when using only the Pt layer. This resulted in a reduction of approximately 1 / 4 of the energy during writing.

[0085] As samples 30 to 34, a measurement system was constructed by fabricating a hole bar similar to those in Figures 18 and 19A. As shown in Figure 19A, samples 30 to 34 consisted of a Si substrate 101 with a thermal oxide film, a 2.0 nm thick Ta layer 102 on the thermal oxide film, a 2.0 nm thick Ir layer 103 on the Ta layer 102, a 1.1 nm thick Co layer 104 on the Ir layer 103, a 0.6 nm thick Pt layer 105 on the Co layer 104, and a layer on the Pt layer 105. The sample was composed of an Ir layer 106 of a predetermined thickness, a Pt layer 107 with a thickness of 0.6 nm provided on the Ir layer 106, a Co layer 108 with a thickness of 1.1 nm provided on the Pt layer 107, an Ir layer 109 with a thickness of 0.5 nm provided on the Co layer 108, an MgO layer 110 with a thickness of 1.5 nm provided on the Ir layer 109, and a Ta layer 111 with a thickness of 1.0 nm provided on the MgO layer 110. The thickness of the Ir layer 106 was 0.5 nm for sample 30, 0.52 nm for sample 31, 0.56 nm for sample 32, 0.58 nm for sample 33, and 0.6 nm for sample 34.

[0086] Figure 21A shows the dependence of spin generation efficiency on Ir layer thickness for samples 30 to 34, and Figure 21B shows the dependence of spin generation efficiency on interlayer coupling force J for samples 30 to 34. ex (mJ / m 2 This figure shows the dependence. In Figure 21A, the horizontal axis is Ir thickness t_Ir (nm), and in Figure 21B, the horizontal axis is interlayer bonding force J ex (mJ / m 2 ) and the vertical axis in Figures 21A and 21B represents the spin generation efficiency θ. SH (%). Figures 21A and 21B also show, as comparative examples, the results for a multilayer film of (Pt 1.0 nm / Ir 0.8 nm)4 and a Pt layer with a thickness of 7.2 nm, instead of Pt layer 105 / Ir layer 106 / Pt layer 107. When the thickness of the Ir layer decreases from 0.6 nm to 0.5 nm, the spin generation efficiency θ SH (%) increases. θ SH (%) is inversely proportional to the writing current (reverse current) and power consumption, so J ex (mJ / m 2 Using the maximum value obtained in this study, it became clear that the reversal current could be reduced to approximately 1 / 5 and the power consumption to approximately 1 / 25 compared to the Pt / Co sample (Comparison Sample 2) in Figure 20. From these results, the interlayer bonding force J ex (mJ / m 2 It was found that the larger the value, the lower the power consumption can be.

[0087] When an Ir layer is used as the interlayer bonding layer, the interlayer bonding force J is within the above range for the thickness of the Ir layer. ex (mJ / m 2 It was found that the larger the ), the greater the spin generation efficiency (spin Hall angle). In comparison with the comparative example of a multilayer film of (Pt1.0nm / Ir0.8nm)4 and a Pt layer with a thickness of 7.2nm, Synthetic In the AF structure, the thickness of the Ir layer is preferably 0.4 nm to 0.6 nm, and more preferably 0.50 nm to 0.58 nm.

[0088] As samples 35 to 39, a measurement system was constructed by fabricating a hole bar similar to those in Figures 18 and 19A. As shown in Figure 19A, samples 35 to 39 consisted of a Si substrate 101 with a thermal oxide film, a 2.0 nm thick Ta layer 102 on the thermal oxide film, a 2.0 nm thick Ir layer 103 on the Ta layer 102, a 1.1 nm thick Co layer 104 on the Ir layer 103, a Pt layer 105 of a predetermined thickness on the Co layer 104, and a layer provided on the Pt layer 105. The sample was composed of an Ir layer 106 with a thickness of 0.5 nm, a Pt layer 107 of a predetermined thickness provided on the Ir layer 106, a Co layer 108 with a thickness of 1.1 nm provided on the Pt layer 107, an Ir layer 109 with a thickness of 0.5 nm provided on the Co layer 108, an MgO layer 110 with a thickness of 1.5 nm provided on the Ir layer 109, and a Ta layer 111 with a thickness of 1.0 nm provided on the MgO layer 110. The thicknesses of the Pt layer 105 and Pt layer 107 were 0.8 nm in sample 35, 0.7 nm in sample 36, 0.6 nm in sample 37, 0.5 nm in sample 38, and 0.4 nm in sample 39.

[0089] Figure 22A shows the dependence of spin generation efficiency on Pt layer thickness for samples 35 to 39, and Figure 22B shows the dependence of spin generation efficiency on interlayer coupling force J for samples 35 to 39. ex (mJ / m 2 This figure shows the dependency. In Figure 22A, the horizontal axis is the total thickness t_Pt (nm) of Pt layer 145 and Pt layer 147, and in Figure 22B, the horizontal axis is the interlayer bonding force J ex (mJ / m 2 ) and the vertical axis in Figures 22A and 22B represents the spin generation efficiency θ. SH (%). Figures 22A and 22B show the Pt layer. 105 / Ir layer 106 / Pt layer 107 of else As a comparative example, the results for a multilayer film of (Pt 1.0 nm / Ir 0.8 nm) and a Pt layer with a thickness of 7.2 nm are also shown. When the thickness of the Pt layer increases from 0.8 nm to approximately 1.3 nm, the spin generation efficiency θ SH(%) increases, and as the thickness of the Pt layer increases from approximately 1.3 nm to 1.6 nm, the spin generation efficiency θ increases. SH (%) decreases. In other words, the Pt layer thickness is such that the spin Hall angle and spin generation efficiency are maximized.

[0090] When a Pt layer is used as a non-magnetic layer sandwiching the interlayer coupling layer, the spin generation efficiency is higher when the thickness of the Pt layer is in the above range compared to a multilayer film with a thickness of (Pt1.0nm / Ir0.8nm)4 or a Pt layer with a thickness of 7.2nm. The thickness of the Pt layers 105 and 107 is preferably 0.4nm or more and 0.8nm or less, more preferably about 0.5nm or more and about 0.8nm or less, and particularly preferably 0.55nm or more and 0.75nm or less.

[0091] [Fifth Embodiment] The conductive layer 50 as a magnetic multilayer film according to the fifth embodiment has a third non-magnetic layer 61 on the side opposite to the antiferromagnetic coupling layers 10a, 40a of the second ferromagnetic layers 16, 45 in the magnetic multilayer films 10, 40 according to the first to fourth embodiments, and the third non-magnetic layer 61 is composed of a layer made of a metal or alloy (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) containing at least one of W, Cu, Ta, or Mn. The magnetoresistive element 5 according to the fifth embodiment has a third non-magnetic layer (for example, the third non-magnetic layer 61 shown in Figure 23B) provided on the recording layer 17, 28, 28A side, which is the side opposite to the antiferromagnetic coupling layers 10a, 40a of the second ferromagnetic layers 16, 45 in the magnetic multilayer films 10, 40 according to the magnetoresistive elements 1 to 4 according to the first to fourth embodiments. Therefore, to avoid redundant explanations, the matters described in the first to fourth embodiments, such as the material and thickness of each layer, will be omitted, and the following explanation will be representative of the case where the embodiment shown in Figure 1B is applied. A description of the case where the embodiment is applied to the second to fourth embodiments will not be necessary for those skilled in the art.

[0092] Figure 23A is a plan view of the magnetoresistive element according to the fifth embodiment, and Figure 23B is a cross-sectional view along the EE line in Figure 23A. The magnetoresistive element 5 according to the fifth embodiment is composed of a base layer 51 provided on a substrate (not shown), a first ferromagnetic layer 52 provided on the base layer 51, a first non-magnetic layer 53 provided on the first ferromagnetic layer 52, an interlayer coupling layer 54 provided on the first non-magnetic layer 53, a second non-magnetic layer 55 provided on the interlayer coupling layer 54, and a second ferromagnetic layer 56 provided on the second non-magnetic layer 55. That is, the conductive layer 50 is configured as follows. The first non-magnetic layer 53 and the second non-magnetic layer 55 are in contact with the corresponding upper and lower surfaces of the interlayer bonding layer 54, forming an antiferromagnetic bonding layer 50a with the interlayer bonding layer 54 in between. The first ferromagnetic layer 52 is in contact with the lower surface of the first non-magnetic layer 53, and the second ferromagnetic layer 56 is in contact with the upper surface of the second non-magnetic layer 55. Thus, the first ferromagnetic layer 52 and the second ferromagnetic layer 56 sandwich the first non-magnetic layer 53, the interlayer bonding layer 54, and the second non-magnetic layer 55. The third non-magnetic layer 61 is located on the second ferromagnetic layer 56, and the third non-magnetic layer 61 is composed of a layer made of a metal or alloy (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) containing at least one of W, Cu, Ta, or Mn.

[0093] In the illustrated configuration, the third non-magnetic layer 61 may be in contact with the upper surface of the second ferromagnetic layer 56 and the lower surface of the recording layer 57. The second ferromagnetic layer 56 in contact with the third non-magnetic layer 61 has a magnetization that is tilted with respect to the current direction of the conductive layer 50, that is, it has a component in the z direction. The third non-magnetic layer 61 preferably has a thickness of 0.3 nm to 2.0 nm after the magnetoresistive element 5 is formed (junction separation). If W, Cu, Ta, and Mn do not remain on the second ferromagnetic layer 56 after junction separation, the magnetization reversal in the absence of a magnetic field shown below will not be observed. If it is too thick, the magnetic interaction between the recording layer 57 and the second ferromagnetic layer 56 will weaken, and when the first ferromagnetic layer 52 and the second ferromagnetic layer 56 undergo SOT magnetization reversal, the recording layer 57 of the magnetoresistive element 5 will also not undergo magnetization reversal.

[0094] As shown in the figure, a recording layer 57 made of a magnetization-reversible material is formed on the third non-magnetic layer 61, and a barrier layer 58 is provided in contact with the recording layer 57. A non-magnetic layer 59 serving as a reference layer is provided on the barrier layer 58. The stacking of the recording layer 57, barrier layer 58, and non-magnetic layer 59 constitutes a magnetoresistive element 5 using the tunnel anisotropic magnetoresistance effect, similar to the first embodiment.

[0095] In the fifth embodiment, the second non-magnetic layer (a layer made of a metal or alloy containing Pt) 55 and the third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61 located above and below the second ferromagnetic layer 56 are different. For example, the Co layer as the second ferromagnetic layer 56 is sandwiched between the second non-magnetic layer (a layer made of a metal or alloy containing Pt) 55 and the third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61. Consequently, even without applying an external magnetic field, if the first ferromagnetic layer 52 and the second ferromagnetic layer 56 are magnetized to have perpendicular components, the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 can be reversed even with zero external magnetic field by passing an electric current through the conductive layer 50. This is thought to be due to the interaction between the magnetic field 66 generated at the interface between the second ferromagnetic layer 56 and the second non-magnetic layer 55, and the magnetic field 67 generated at the interface between the second ferromagnetic layer 56 and the third non-magnetic layer 61. Since the magnetic fields interacting with Co / Pt have opposite signs, when the layers are stacked in the order of the second non-magnetic layer 55, the second ferromagnetic layer 56, and the third non-magnetic layer 61, the magnetic fields are applied in the same direction as indicated by symbols 66 and 67, causing the spin of the second ferromagnetic layer 56 to tilt in the X direction. This magnetic field is the DM interaction magnetic field (H) arising from the Dzyaloshinskii-Moriya (DM) interaction. DMI ) is thought to be H DMI That is the case.

[0096] As described above, in the fifth embodiment, in the magnetoresistive element 1 according to the first embodiment, the third non-magnetic layer 61 is provided on the recording layer 17 (recording layer 57 in Figure 23B) side so as to face the magnetic laminated film 10, for example, between the second ferromagnetic layer 16 and the recording layer 17 (between the second ferromagnetic layer 56 and the recording layer 57 in Figure 23B).

[0097] In the fifth embodiment, in the magnetoresistive element 2 according to the second embodiment, the third non-magnetic layer 61 is provided on the recording layer 28, 28A side so as to face the magnetic laminate 10, for example, between the second ferromagnetic layer 16 and the non-magnetic layer 27 shown in Figures 3B and 3C, or between the second ferromagnetic layer 16 and the recording layer 28A shown in Figure 3D.

[0098] In the fifth embodiment, the magnetoresistive element 3 according to the third embodiment is provided on the recording layer 17 side, for example, between the second ferromagnetic layer 45 shown in Figure 4B and the recording layer 17, so as to face the magnetic laminated film 40.

[0099] In the fifth embodiment, the magnetoresistive element 4 according to the fourth embodiment is provided on the recording layer 28, 28A side so as to face the magnetic laminate 40, for example between the second ferromagnetic layer 45 and the non-magnetic layer 27 shown in Figures 6B and 6C, or between the second ferromagnetic layer 45 and the recording layer 28A shown in Figure 6D.

[0100] [Sixth Embodiment] The conductive layer 50 as a magnetic multilayer film according to the sixth embodiment has a third non-magnetic layer 61 on the side opposite to the antiferromagnetic coupling layers 10a, 40a of the first ferromagnetic layers 12, 42 in the magnetic multilayer films 10, 40 according to the first to fourth embodiments, and the third non-magnetic layer 61 is composed of a layer made of a metal or alloy (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) containing at least one of W, Cu, Ta, or Mn. The magnetoresistive element 6 according to the sixth embodiment has a third non-magnetic layer (for example, the third non-magnetic layer 61 shown in Figure 24) on the side opposite to the recording layer, which is the side opposite to the antiferromagnetic coupling layers 10a, 40a of the first ferromagnetic layers 12, 42 in the magnetic multilayer films 10, 40 according to the magnetoresistive elements 1 to 4 according to the first to fourth embodiments. Therefore, to avoid redundant explanations, the matters described in the first to fourth embodiments, such as the material and thickness of each layer, will be omitted, and the following explanation will be representative of the case where the embodiment shown in Figure 1B is applied. A description of the case where the embodiment is applied to the second to fourth embodiments will not be necessary for those skilled in the art.

[0101] Figure 24 is a cross-sectional view of a magnetoresistive element according to the sixth embodiment. The plan view is the same as in Figure 23A and is therefore omitted. In the sixth embodiment as well, the first non-magnetic layer 53 and the second non-magnetic layer 55 are in contact with the corresponding upper and lower surfaces of the interlayer bonding layer 54, forming an antiferromagnetic coupling layer 50a with the interlayer bonding layer 54 in between. The conductive layer 50 is configured such that a third non-magnetic layer 61 is provided on the lower surface of the first ferromagnetic layer 52, which is the surface opposite to the antiferromagnetic coupling layer 50a. The third non-magnetic layer 61 is a layer made of a metal or alloy (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) containing any of W, Cu, Ta, or Mn. In the illustrated form, the third non-magnetic layer 61 may be in contact with the upper surface of the base layer 51 and the lower surface of the first ferromagnetic layer 52. Furthermore, the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 is tilted with respect to the current direction of the conductive layer 50, that is, it has a component in the z direction. When the third non-magnetic layer 61 is provided in contact with the lower surface of the first ferromagnetic layer 52, there is no particular limit on the thickness, but in order to maintain antiferromagnetic coupling, it is essential that the first ferromagnetic layer 52, the first non-magnetic layer 53, the second non-magnetic layer 55, and the second ferromagnetic layer 56 maintain fcc(111) orientation. In this sense, the use of Cu is most preferable in this case. The third non-magnetic layer 61 preferably has a thickness of 0.3 nm or more and 2.0 nm or less.

[0102] In the sixth embodiment, the first non-magnetic layer (a layer made of a metal or alloy containing Pt) 53 and the third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61 above and below the first ferromagnetic layer 52 are different. For example, the Co layer as the first ferromagnetic layer 52 is sandwiched between the first non-magnetic layer (a layer made of a metal or alloy containing Pt) 53 and the third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61. Consequently, even without applying an external magnetic field, if the first ferromagnetic layer 52 and the second ferromagnetic layer 56 are magnetized to have perpendicular components, the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 can be reversed even with zero external magnetic field by passing an electric current through the conductive layer 50. This is thought to be due to the interaction between the magnetic field 66 generated at the interface between the first ferromagnetic layer 52 and the first non-magnetic layer 53, and the magnetic field 67 generated at the interface between the first ferromagnetic layer 52 and the third non-magnetic layer 61. Since the magnetic fields interacting with Co / Pt have opposite signs, when the layers are stacked in the order of the third non-magnetic layer 61, the first ferromagnetic layer 52, and the first non-magnetic layer 53, the magnetic fields are applied in the same direction as indicated by symbols 66 and 67, causing the spin of the second ferromagnetic layer 56 to tilt in the X direction. This magnetic field is thought to be a DM interaction magnetic field (HDMI) arising from the Dzyaloshinskii-Moriya (DM) interaction, with magnetic fields 66 and 67 being H DMI That is the case.

[0103] As described above, the sixth embodiment is a magnetoresistive element 1 according to the first embodiment, wherein the third non-magnetic layer 61 faces the magnetic laminated film 10, and is located on the opposite side of the recording layer 17 (recording layer 57 in Figure 24), for example, between the base layer 11 shown in Figure 1B and the first ferromagnetic layer 12 (in Figure 24) Substrate layer 51 and first ferromagnetic layer 52 It is provided between the two.

[0104] In the sixth embodiment, in the magnetoresistive element 2 according to the second embodiment, the third non-magnetic layer 61 is provided on the opposite side of the recording layer 17 so as to face the magnetic laminated film 10, for example, between the underlayer 11 and the first ferromagnetic layer 12 as shown in Figures 3B, 3C, and 3D.

[0105] In the sixth embodiment, the magnetoresistive element 3 according to the third embodiment is provided on the opposite side of the recording layer 17, for example, between the underlayer 41 and the first ferromagnetic layer 42 shown in Figure 4B, so as to face the magnetic laminated film 40.

[0106] In the sixth embodiment, the magnetoresistive element 4 according to the fourth embodiment is provided on the recording layer 28,28A side such that the third non-magnetic layer 61 faces the magnetic laminate 40, for example, between the second ferromagnetic layer 45 and the non-magnetic layer 27 as shown in Figures 6B and 6C, or between the second ferromagnetic layer 45 and the recording layer 28A as shown in Figure 6D.

[0107] [Seventh Embodiment] The conductive layer 50 as a magnetic multilayer film according to the seventh embodiment has a third non-magnetic layer 61 on the side opposite to the antiferromagnetic coupling layers 10a, 40a of the first ferromagnetic layers 12, 42 in the magnetic multilayer films 10, 40 according to the first to fourth embodiments, and a fourth non-magnetic layer 62 on the side opposite to the antiferromagnetic coupling layers 10a, 40a of the second ferromagnetic layers 16, 45, and the third non-magnetic layer 61 and the fourth non-magnetic layer 62 are composed of layers made of a metal or alloy (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) containing at least one of W, Cu, Ta, or Mn. The magnetoresistive element 7 according to the seventh embodiment has a third non-magnetic layer (for example, the third non-magnetic layer 61 shown in Figure 25) on the side opposite to the recording layer on the side opposite to the antiferromagnetic coupling layers 10a and 40a of the first ferromagnetic layers 12 and 42 of the magnetic multilayer films 10 and 40 of the magnetoresistive elements 1 to 4 according to the first to fourth embodiments, and a fourth non-magnetic layer (for example, the fourth non-magnetic layer 62 shown in Figure 25) on the side opposite to the antiferromagnetic coupling layers 10a and 40a of the second ferromagnetic layers 16 and 45. Therefore, to avoid redundant explanations, the matters described in the first to fourth embodiments, such as the material and thickness of each layer, will be omitted, and the following description will be representative of the case where it is applied to the form shown in Figure 1B. A description of the case where it is applied to the second to fourth embodiments will not be necessary for those skilled in the art.

[0108] Figure 25 is a cross-sectional view of a magnetoresistive element according to the seventh embodiment. The plan view is the same as in Figure 23A and is therefore omitted. In the seventh embodiment, the conductive layer 50 is configured such that an antiferromagnetic coupling layer 50a is formed by a first non-magnetic layer 53, an interlayer coupling layer 54, and a second non-magnetic layer 55. The first ferromagnetic layer 52 has a third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61 on the lower surface opposite to the antiferromagnetic coupling layer 50a, and the second ferromagnetic layer 56 has a fourth non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 62 on the upper surface opposite to the antiferromagnetic coupling layer 50a. Furthermore, the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 is tilted with respect to the current direction of the conductive layer 50, that is, it has a component in the z direction. The fourth non-magnetic layer (a layer made of any metal or alloy of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 62 preferably has a thickness of 0.3 nm to 2.0 nm after the magnetoresistive element 7 is formed (junction separation). If W, Cu, Ta, or Mn does not remain on the second ferromagnetic layer 56 after junction separation, the magnetization reversal in the absence of a magnetic field shown below will not be observed. Also, if it is too thick, the magnetic interaction between the recording layer 57 and the second ferromagnetic layer 56 will weaken, and when the first ferromagnetic layer 52 and the second ferromagnetic layer 56 undergo SOT magnetization reversal, the recording layer 57 of the magnetoresistive element 7 will also not undergo magnetization reversal. The third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61 has no particular thickness limit, but in order to maintain antiferromagnetic coupling, it is essential that the first ferromagnetic layer 52, the first non-magnetic layer 53, the second non-magnetic layer 55, and the second ferromagnetic layer 56 maintain fcc(111) orientation. In this sense, using Cu is most preferable in this case. The third non-magnetic layer 61 and the fourth non-magnetic layer 62 are made of different materials. The third non-magnetic layer 61 preferably has a thickness of 0.3 nm or more and 2.0 nm or less.

[0109] In the seventh embodiment, the first non-magnetic layer (a layer made of a metal or alloy containing Pt) 53 located above and below the first ferromagnetic layer 52 is different from the third non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 61 located above and below the first ferromagnetic layer 52. The second non-magnetic layer (a layer made of a metal or alloy containing Pt) 55 located above and below the second ferromagnetic layer 56 is different from the fourth non-magnetic layer (a layer made of a metal or alloy containing any of W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy)) 62 located above and below the second ferromagnetic layer 56. Therefore, as described in the fifth and sixth embodiments, even without applying an external magnetic field, and even if the first ferromagnetic layer 52 and the second ferromagnetic layer 56 are magnetized to have perpendicular components, the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 can be reversed even with zero external magnetic field by passing an electric current through the conductive layer 50.

[0110] The seventh embodiment is a magnetoresistive element 2 according to the second embodiment, in which the third non-magnetic layer 61 is provided on the opposite side of the recording layer 17 so as to face the magnetic multilayer film 10, for example between the base layer 11 and the first ferromagnetic layer 12 as shown in Figures 3B, 3C, and 3D, and the fourth non-magnetic layer 62 is provided on the recording layer 28, 28A side so as to face the magnetic multilayer film 10, for example between the second ferromagnetic layer 16 and the non-magnetic layer 27 as shown in Figures 3B and 3C, or between the second ferromagnetic layer 16 and the recording layer 28A as shown in Figure 3D.

[0111] The seventh embodiment is a magnetoresistive element 3 according to the third embodiment, in which the third non-magnetic layer 61 is provided on the opposite side of the recording layer 17 so as to face the magnetic laminated film 40, for example between the base layer 41 and the first ferromagnetic layer 42 as shown in Figure 4B, and the fourth non-magnetic layer 62 is provided on the recording layer 28, 28A side so as to face the magnetic laminated film 40, for example between the second ferromagnetic layer 45 and the recording layer 17 as shown in Figure 4B.

[0112] The seventh embodiment is a magnetoresistive element 4 according to the fourth embodiment, in which the third non-magnetic layer 61 is provided on the opposite side of the recording layer 28 so as to face the magnetic multilayer film 40, for example between the base layer 41 and the first ferromagnetic layer 42 as shown in Figure 6B, and the fourth non-magnetic layer 62 is provided on the recording layer 28, 28A side so as to face the magnetic multilayer film 40, for example between the second ferromagnetic layer 45 and the non-magnetic layer 27 as shown in Figures 6B and 6C, or between the second ferromagnetic layer 45 and the recording layer 28A as shown in Figure 6D.

[0113] In the fifth to seventh embodiments, in the magnetoresistive element 1 of the first to fourth embodiments, a third non-magnetic layer 61 and a fourth non-magnetic layer 62 made of a metal or alloy containing W, Cu, Ta, or Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) are interposed between the first ferromagnetic layers 12, 42 and the magnetic multilayer films 10, 40, or between the second ferromagnetic layers 16, 45 and the magnetic multilayer films 10, 40, or both. The third non-magnetic layer 61 and the fourth non-magnetic layer 62 can also be referred to as a magnetic multilayer film.

[0114] As demonstration example 10, a hole bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. Figure 26 is a cross-sectional view of demonstration example 10. In demonstration example 10, as shown in Figure 26, a Si substrate 141 with a thermal oxide film is provided, a 2.0 nm thick Ta layer 142 is provided on the thermal oxide film, a 2.0 nm thick Ir layer 143 is provided on the Ta layer 142, a 1.1 nm thick Co layer 144 is provided on the Ir layer 143, a 0.6 nm thick Pt layer 145 is provided on the Co layer 144, a 0.5 nm thick Ir layer 146 is provided on the Pt layer 145, a 0.6 nm thick Pt layer 147 is provided on the Ir layer 146, a 1.1 nm thick Co layer 148 is provided on the Pt layer 147, a 1.5 nm thick W layer 149 is provided on the Co layer 148, a 1.5 nm thick MgO layer 150 is provided on the W layer 149, and an MgO layer 150 It was constructed with a 1.0 nm thick Ta layer 151 placed on top. Figure 27 is an electron microscope image of the hole bar fabricated in demonstration example 10, with a magnified image of the center of the image on the right.

[0115] In Demonstration Example 10, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figures 28A to 28F show the pulsed current dependence of the Hall resistance Rxy(Ω) in Demonstration Example 10. The horizontal axis represents the pulsed current I(A), and the vertical axis represents the Hall resistance Rxy(Ω). Figure 28A shows the results when a pulse current I was applied for 200 μs and a constant external magnetic field Hex of 49 mT and 39 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18). Figure 28B shows the results when a pulse current I was applied for 200 μs and a constant external magnetic field Hex of 28.5 mT and 18 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18). Figure 28C shows the results when a pulse current I was applied for 200 μs and a constant external magnetic field Hex of 8 mT and 0 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18). Figure 28D shows the results when a pulse current I is applied for 200 μs and a constant external magnetic field Hex of -6.5 mT and -16.5 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18). Figure 28E shows the results when a pulse current I is applied for 200 μs and a constant external magnetic field Hex of -27 mT and -37 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement. Figure 28F shows the results when a pulse current I is applied for 200 μs and a constant external magnetic field Hex of -48 mT and -58 mT, respectively, in the direction of the pulse current I (φ=0 degree direction in Figure 18) during the measurement.

[0116] When external magnetic fields of 49mT, 39mT, 28.5mT, 18mT, 8mT, 0mT, -6.5mT, -16.5mT, and -27mT were applied, an increase in Hall resistance Rxy was observed at a certain current value when a pulse current was applied in the + direction, and a decrease in Hall resistance Rxy was observed at a certain current value when a pulse current was applied in the - direction. This indicates that the magnetic moments of Co layers 124 and 128 are reversed by pulse current. In particular, note that the magnetic moments of Co layers 144 and 148 are reversed by pulse current even without the application of an external magnetic field.

[0117] When external magnetic fields of -37mT, -48mT, and -58mT were applied, a decrease in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the + direction, and an increase in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the - direction. This indicates that the magnetic moments of Co layers 144 and 148 are reversed by the pulsed current.

[0118] Furthermore, from these findings, the DM interaction magnetic field (H DMI It was found that a voltage of -27mT to -37mT was being generated.

[0119] Figure 29 shows the dependence of the Hall resistance Rxy(Ohm) on the number of repetitions when pulsed current is alternately applied in the ± direction in the absence of a magnetic field in demonstration example 10. From Figure 29, it can be seen that stable magnetization reversal occurs even when pulsed current is repeatedly applied in the ± direction.

[0120] As demonstration example 11, a hole bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. In demonstration example 11, as shown in Figure 26, a Si substrate 141 with a thermal oxide film was provided, a 2.0 nm thick Ta layer 142 provided on the thermal oxide film, a 2.0 nm thick Ir layer 143 provided on the Ta layer 142, a 1.1 nm thick Co layer 144 provided on the Ir layer 143, a 0.6 nm thick Pt layer 145 provided on the Co layer 144, and a thickness provided on the Pt layer 145 It is composed of a 0.5 nm thick Ir layer 146, a 0.6 nm thick Pt layer 147 provided on the Ir layer 146, a 1.1 nm thick Co layer 148 provided on the Pt layer 147, a 1.0 nm thick Cu layer 149 provided on the Co layer 148, a 1.5 nm thick MgO layer 150 provided on the Cu layer 149, and a 1.0 nm thick Ta layer 151 provided on the MgO layer 150.

[0121] In Demonstration Example 11, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figure 30 shows the results of the pulsed current dependence of the Hall resistance Rxy(Ω) in Demonstration Example 11, when a pulsed current I was applied for 200 μs and no constant external magnetic field Hex was applied during the measurement. The horizontal axis represents the pulsed current I(mA), and the vertical axis represents the Hall resistance Rxy(Ω).

[0122] Even without applying an external magnetic field, a decrease in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the + direction, and an increase in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the - direction. This indicates that the magnetic moment of Co layers 144 and 148 is reversed by the pulsed current.

[0123] Figure 31 shows the dependence of the Hall resistance Rxy(Ohm) on the number of repetitions when pulsed current is alternately applied in the ± direction in no magnetic field in demonstration example 11. From Figure 31, it can be seen that stable magnetization reversal occurs even when pulsed current is repeatedly applied in the ± direction.

[0124] As demonstration example 12, a hole bar was fabricated and a measurement system was constructed in the same manner as in Figure 18. In demonstration example 12, as shown in Figure 32, a Si substrate 161 with a thermal oxide film was provided, a 2.0 nm thick Ta layer 162 provided on the thermal oxide film, a 2.0 nm thick Ir layer 163 provided on the Ta layer 162, a 1.0 mm thick Cu layer 164 provided on the Ir layer 163, a 1.1 nm thick Co layer 165 provided on the Cu layer 164, and a 0.6 nm thick Pt layer 166 provided on the Co layer 165. The structure consists of a 0.55 nm thick Ir layer 167 provided on a Pt layer 166, a 0.6 nm thick Pt layer 168 provided on the Ir layer 167, a 1.1 nm thick Co layer 169 provided on the Pt layer 168, a 1.0 nm thick W layer 170 provided on the Co layer 169, a 1.5 nm thick MgO layer 171 provided on the W layer 170, and a 1.0 nm thick Ta layer 172 provided on the MgO layer 171.

[0125] In Demonstration Example 12, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figure 33 shows the pulsed current dependence of the Hall resistance Rxy(Ω) in Demonstration Example 12. The horizontal axis is the pulsed current I(A), and the vertical axis is the Hall resistance Rxy(Ω). During the measurement, the pulsed current I was applied for 200 μs, and no constant external magnetic field Hex was applied. 33 From this, it was observed that when a pulsed current was applied in the + direction, an increase in Hall resistance Rxy was observed at a certain current value, and when a pulsed current was applied in the - direction, a decrease in Hall resistance Rxy was observed at a certain current value. This indicates that the magnetic moment of Co layers 165 and 169 is reversed by the pulsed current.

[0126] As demonstration example 13, a hole bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. In demonstration example 13, as shown in Figure 26, a Si substrate 141 with a thermal oxide film was provided, a 2.0 nm thick Ta layer 142 provided on the thermal oxide film, a 2.0 nm thick Ir layer 143 provided on the Ta layer 142, a 1.1 nm thick Co layer 144 provided on the Ir layer 143, a 0.6 nm thick Pt layer 145 provided on the Co layer 144, and a thickness provided on the Pt layer 145 It is composed of a 0.55 nm thick Ir layer 146, a 0.6 nm thick Pt layer 147 provided on the Ir layer 146, a 1.1 nm thick Co layer 148 provided on the Pt layer 147, a 0.7 nm thick W layer 149 provided on the Co layer 148, a 1.5 nm thick MgO layer 150 provided on the W layer 149, and a 1.0 nm thick Ta layer 151 provided on the MgO layer 150.

[0127] In Demonstration Example 13, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figure 34 shows the pulsed current dependence of the Hall resistance Rxy(Ω) in Demonstration Example 13. The horizontal axis is the pulsed current I(A), and the vertical axis is the Hall resistance Rxy(Ω). During the measurement, a pulsed current I was applied for 200 μs, and no constant external magnetic field Hex was applied. From Figure 34, it was observed that when the pulsed current was applied in the + direction, an increase in the Hall resistance Rxy was observed at a certain current value, and when it was applied in the - direction, a decrease in the Hall resistance Rxy was observed at a certain current value. This indicates that the magnetic moment of Co layers 144 and 148 is reversed by the pulsed current.

[0128] As Demonstration Example 14, a Hol bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. In Demonstration Example 14, the configuration was the same as in Demonstration Example 13, and the thickness of the W layer 149 was set to 0.3 nm. In Demonstration Example 14, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy (Ω) on the pulsed current I was measured. Note that Rxy (Ω) = V / I. Figure 35 shows the pulsed current dependence of the Hall resistance Rxy (Ω) in Demonstration Example 14. The horizontal axis is the pulsed current I (A), and the vertical axis is the Hall resistance Rxy (Ω). During the measurement, a pulsed current I was applied for 200 μs, and no constant external magnetic field Hex was applied. From Figure 35, it was observed that when a pulsed current was applied in the + direction, an increase in Hall resistance Rxy was observed at a certain current value, and when a pulsed current was applied in the - direction, a decrease in Hall resistance Rxy was observed at a certain current value. This indicates that the magnetic moment of Co layers 144 and 148 is reversed by the pulsed current.

[0129] As Demonstration Example 15, a Hol bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. In Demonstration Example 15, the configuration was the same as in Figure 26, except that in Demonstration Example 13 a W layer 149 with a thickness of 0.7 nm was used, while in Demonstration Example 15 a Ta layer 149 with a thickness of 1.0 nm was used. In Demonstration Example 15, a pulsed current I was applied in the y direction and the Hall voltage V was measured. The dependence of the Hall resistance Rxy (Ω) on the pulsed current I was measured. Note that Rxy (Ω) = V / I. Figure 36 is a diagram showing the pulsed current dependence of the Hall resistance Rxy (Ω) in Demonstration Example 15. The horizontal axis is the pulsed current I (A), and the vertical axis is the Hall resistance Rxy (Ω). During the measurement, a pulsed current I was applied for 200 μs, and no constant external magnetic field Hex was applied. From Figure 36, it was observed that when a pulsed current was applied in the + direction, a decrease in Hall resistance Rxy was observed at a certain current value, and when a pulsed current was applied in the - direction, an increase in Hall resistance Rxy was observed at a certain current value. This indicates that the magnetic moment of Co layers 144 and 148 is reversed by the pulsed current.

[0130] As demonstration example 16, a hole bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. In demonstration example 16, in the configuration shown in Figure 26, while demonstration example 13 used a W layer 129 with a thickness of 0.7 nm, demonstration example 16 used an Ir layer with a thickness of 2.0 nm. 22 Mn 78 The experiment was similar except for the use of layer 129. In demonstration example 16, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figure 37 shows the pulsed current dependence of the Hall resistance Rxy(Ω) in demonstration example 16. The horizontal axis is the pulsed current I(A), and the vertical axis is the Hall resistance Rxy(Ω). During the measurement, a pulsed current I was applied for 200 μs, and no constant external magnetic field Hex was applied. From Figure 37, it was observed that when the pulsed current was applied in the + direction, an increase in the Hall resistance Rxy was observed at a certain current value, and when it was applied in the - direction, a decrease in the Hall resistance Rxy was observed at a certain current value. This indicates that the magnetic moment of Co layers 144 and 148 is reversed by the pulsed current.

[0131] Figure 38 shows the dependence of the Hall resistance Rxy(Ohm) on the number of repetitions when pulsed current is alternately applied in the ± direction in no magnetic field, in demonstration example 16. From Figure 38, it can be seen that, similar to Figure 31, stable magnetization reversal occurs even when pulsed current is repeatedly applied in the ± direction.

[0132] As Comparative Example 3, a Hall bar was fabricated and a measurement system was constructed in the same manner as in Figures 18 and 26. In Comparative Example 3, the configuration was the same as in Figure 26, except that the Mo layer 149 had a thickness of 1.0 nm and the Ir layer 126 had a thickness of 0.5 nm. In Comparative Example 3, a pulsed current I was applied in the y direction and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figure 39 shows the pulsed current dependence of the Hall resistance Rxy(Ω) in Comparative Example 3. The horizontal axis is the pulsed current I(A) and the vertical axis is the Hall resistance Rxy(Ω). During the measurement, a pulsed current I was applied for 200 μs and no constant external magnetic field Hex was applied. From Figure 39, it could not be observed that the magnetic moments of the Co layers 144 and 148 were reversed by the pulsed current. At the Pt / Co / Mo interface, the effective DM (Dzyaloshinskii-Moriya,DM) interaction magnetic field (H DMI It was revealed that the same phenomenon as at the Pt / Co / Ir interface does not occur.

[0133] As Comparative Example 4, a hole bar was fabricated and a measurement system was constructed in the same manner as in Figure 18. Figure 40 is a cross-sectional view of Comparative Example 4. Comparative Example 4 consisted of a Si substrate 181 with a thermal oxide film, a 3 nm thick Ta layer 182 on the thermal oxide film, a laminate 183 (total film thickness 7.2 nm) on the Ta layer 182 consisting of a 1.0 nm thick Pt layer and a 0.8 nm thick Ir layer, a 1.3 nm thick Co layer 184 on the laminate 183, a 1.5 nm thick W layer 185 on the Co layer 184, a 1.5 nm thick MgO layer 186 on the W layer 185, and a 1.0 nm thick Ta layer 187 on the MgO layer 186.

[0134] In Comparative Example 4, a pulsed current I was applied in the y direction, and the Hall voltage V was measured. The dependence of the Hall resistance Rxy(Ω) on the pulsed current I was measured. Note that Rxy(Ω) = V / I. Figures 41A to 41C show the pulsed current dependence of the Hall resistance Rxy(Ω) in Comparative Example 4. The horizontal axis is the pulsed current I(A), and the vertical axis is the Hall resistance Rxy(Ω). Figure 41A shows the results when a pulsed current I was applied for 200 μs and a constant external magnetic field Hex 29 mT was applied in the direction of the pulsed current I (φ=0 degree direction in Figure 18). Figure 41B shows the results when a pulsed current I was applied for 200 μs and no constant external magnetic field Hex was applied. Figure 41C shows the results when a pulsed current I was applied for 200 μs and a constant external magnetic field Hex -27 mT was applied in the direction of the pulsed current I (φ=0 degree direction in Figure 18).

[0135] When an external magnetic field of 29 mT was applied, a decrease in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the + direction, and an increase in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the - direction. This indicates that the magnetic moment of Co layer 184 is reversed by the pulsed current.

[0136] When an external magnetic field of -27mT was applied, an increase in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the positive direction, and a decrease in Hall resistance Rxy was observed at a certain current value when a pulsed current was applied in the negative direction. This indicates that the magnetic moment of Co layer 184 is reversed by the pulsed current.

[0137] However, when no external magnetic field was applied, no magnetization reversal of the Co layer 184 was observed. In the case of a single layer of Co, unlike the structure shown in Figures 23B to 25, the effective DM interaction magnetic field (H DMI This is thought to be due to insufficient size.

[0138] From the above examples and comparative examples, in Figure 23B, a third non-magnetic layer 61 made of at least one of the metals or alloys of W, Cu, Ta, and Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) is provided on the side of the second ferromagnetic layer 56 opposite to the antiferromagnetic coupling layer 50a; in Figure 24, a third non-magnetic layer 61 made of at least one of the metals or alloys of W, Cu, Ta, and Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) is provided on the side of the first ferromagnetic layer 52 opposite to the antiferromagnetic coupling layer 50a; and in Figure 25, the antiferromagnetic coupling layer 50 It was found that by providing a third non-magnetic layer 61 made of at least one of the metals or alloys of W, Cu, Ta, and Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) on the side opposite to a, and a fourth non-magnetic layer 62 made of at least one of the metals or alloys of W, Cu, Ta, and Mn (W alloy, Cu alloy, Ta alloy, Mn alloy, MnIr alloy, TaW alloy) on the side opposite to the antiferromagnetic coupling layer 50a of the second ferromagnetic layer 56, the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 can be reversed by applying a pulsed current without applying an external magnetic field.

[0139] If the second ferromagnetic layer 56 is provided on the recording layer side of the first ferromagnetic layer 52, the third non-magnetic layer 61 may be provided on the opposite side of the first ferromagnetic layer 52 from the recording layer or on the recording layer side of the second ferromagnetic layer 56, or the third non-magnetic layer 61 may be provided on the opposite side of the first ferromagnetic layer 52 from the recording layer and the fourth non-magnetic layer 62 may be provided on the recording layer side of the second ferromagnetic layer 56.

[0140] In this case, it is preferable that the ferromagnetic layers of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 that are in contact with the third non-magnetic layer and the fourth non-magnetic layer have a magnetization tilted in the direction of current application to the conductive layer 50. This is because the magnetization of the first ferromagnetic layer 52 and the second ferromagnetic layer 56 can be reversed even without applying an external magnetic field.

[0141] Furthermore, interdiffusion layers may exist between the first ferromagnetic layer (e.g., a Co layer) 52 and the third non-magnetic layer (a layer of metal or alloy containing any of W, Cu, Ta, or Mn) 61, as shown in Figures 24 and 25; between the second ferromagnetic layer (e.g., a Co layer) 56 and the third non-magnetic layer (a layer of metal or alloy containing any of W, Cu, Ta, or Mn) 61, as shown in Figure 23B; and between the second ferromagnetic layer (e.g., a Co layer) 56 and the fourth non-magnetic layer (a layer of metal or alloy containing any of W, Cu, Ta, or Mn) 62, as shown in Figure 25. The thickness of the interdiffusion layer is 0.2 nm to 0.35 nm.

[0142] This invention addresses the conventional notion that antiferromagnetic materials are unsuitable for applications because they cannot be controlled by a magnetic field. However, recent advancements in SOT technology have made it possible to control the spin of antiferromagnetic materials. Furthermore, in the embodiments of this invention, unlike CuMnAs systems, crystals are not required, and unlike Pt / NiO / Pt systems, there is no need to separately pass current through the upper and lower Pt layers to inject spin into the NiO layer from above and below using the spin Hall effect. As a result, a three-terminal structure can be adopted in which a writing current is passed through first and second terminals spaced apart on the magnetic multilayer film, and a third terminal is provided on the recording layer / barrier layer / fixed layer between the first and second terminals on the magnetic multilayer film, allowing a read current to be passed through this third terminal. [Explanation of symbols]

[0143] 1,2,3,4,5,6,7: Magnetoresistive elements 10,40: Magnetic multilayer film 10a,40a,50a: Antiferromagnetic coupling layer 11,41: Base layer 12,42,52: First ferromagnetic layer 13,44,53: First non-magnetic layer (non-magnetic layer) 14,43,54: Interlayer coupling layer (interlayer coupling nonmagnetic layer) 15,55: Second non-magnetic layer 16,45,56: Second ferromagnetic layer 17: Recording layer 18: Barrier layer 19: Non-magnetic layer 20: Cap layer 27: Non-magnetic layer 28,28A: Recording layer 29: Barrier layer 30: Reference layer 31: Non-magnetic layer 32: Fixed layer 33: Cap layer 34,36:Co layer 35: Ir layer 50: Conductive layer 61: Third non-magnetic layer 62: Fourth non-magnetic layer

Claims

1. Magnetic multilayer film and, A recording layer provided on the magnetic laminate film, comprising a ferromagnetic layer or an antiferromagnetic layer, A barrier layer made of an insulating material and provided on the recording layer, A reference layer provided on the barrier layer, It is equipped with, The magnetic multilayer film includes a first ferromagnetic layer, an antiferromagnetic coupling layer provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the antiferromagnetic coupling layer, wherein the antiferromagnetic coupling layer is composed of a first non-magnetic layer and an interlayer-coupled non-magnetic layer. The first ferromagnetic layer or the second ferromagnetic layer of the magnetic multilayer film and the ferromagnetic layer or the antiferromagnetic layer in the recording layer are coupled by an exchange interaction. A magnetoresistive element in which, by passing an electric current in a direction intersecting the stacking direction of the magnetic laminate, the magnetization in the first ferromagnetic layer and the second ferromagnetic layer are reversed, and the magnetization of the recording layer is reversed.

2. The magnetoresistive element according to claim 1, wherein the reference layer is a non-magnetic layer.

3. The magnetoresistive element according to claim 1, wherein the reference layer comprises a magnetic layer with fixed magnetization.

4. The magnetic laminate is configured by providing a third non-magnetic layer on the recording layer side or the side opposite to the recording layer of the magnetic laminate. The third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. The magnetoresistive element according to claim 1.

5. The magnetic laminate is configured by providing a third non-magnetic layer on the recording layer side or the side opposite to the recording layer of the magnetic laminate, The third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. The magnetoresistive element according to claim 2.

6. The magnetic laminate is configured by providing a third non-magnetic layer on the recording layer side or the side opposite to the recording layer of the magnetic laminate, The third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. The magnetoresistive element according to claim 3.

7. The magnetic laminate is configured such that a third non-magnetic layer is provided on the recording layer side of the magnetic laminate, and a fourth non-magnetic layer is provided on the side of the magnetic laminate opposite to the recording layer. The third non-magnetic layer and the fourth non-magnetic layer are made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. The magnetoresistive element according to claim 1.

8. The magnetic laminate is configured such that a third non-magnetic layer is provided on the recording layer side of the magnetic laminate, and a fourth non-magnetic layer is provided on the side of the magnetic laminate opposite to the recording layer. The third non-magnetic layer and the fourth non-magnetic layer are made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. The magnetoresistive element according to claim 2.

9. The magnetic laminate is configured such that a third non-magnetic layer is provided on the recording layer side of the magnetic laminate, and a fourth non-magnetic layer is provided on the side of the magnetic laminate opposite to the recording layer. The third non-magnetic layer and the fourth non-magnetic layer are made of a metal or alloy containing at least one of W, Cu, Ta, and Mn. The magnetoresistive element according to claim 3.

10. A conductive layer comprising a first ferromagnetic layer, an antiferromagnetic coupling layer provided on the first ferromagnetic layer, and a second ferromagnetic layer provided on the antiferromagnetic coupling layer, wherein the antiferromagnetic coupling layer comprises a conductive layer including a first non-magnetic layer and an interlayer coupling non-magnetic layer. A recording layer provided on the conductive layer, A barrier layer provided on the recording layer, A reference layer provided on the barrier layer, Equipped with, The conductive layer comprises a third non-magnetic layer provided on the side of the recording layer or on the side opposite to the recording layer, and the third non-magnetic layer is made of a metal or alloy containing at least one of W, Cu, Ta, and Mn, thus forming a magnetoresistive element.

11. The magnetoresistive element according to claim 10, wherein the ferromagnetic layer of the first ferromagnetic layer and the second ferromagnetic layer in contact with the third non-magnetic layer has a magnetization tilted in the direction of current application to the conductive layer.

12. The magnetoresistive element according to any one of claims 1 to 11, wherein the antiferromagnetic coupling layer comprises the first nonmagnetic layer, the interlayer coupling nonmagnetic layer provided on the first nonmagnetic layer, and the second nonmagnetic layer provided on the interlayer coupling nonmagnetic layer.

13. The magnetoresistive element according to any one of claims 1 to 11, wherein the first non-magnetic layer is made of a metal or alloy containing Pt.

14. The magnetoresistive element according to any one of claims 1 to 11, wherein the interlayer bonding nonmagnetic layer is made of a metal or alloy containing at least one of Ir, Rh, or Ru.

15. A magnetoresistive element according to any one of claims 1 to 11, wherein the magnetization of the first ferromagnetic layer and the second ferromagnetic layer are reversed by a spin orbit torque caused by an electric current.