Method for adjusting a plasma processing chamber

Abstract

A method for processing one or more substrates in a plasma processing chamber is provided, wherein a plurality of cycles are provided, each cycle including providing a precoat, processing at least one substrate in the plasma processing chamber, and cleaning the plasma processing chamber. The providing precoat includes one or more cycles of depositing a silicon-containing precoat layer and depositing a carbon-containing precoat layer.

Description

Technical Field

[0001] <Cross - Reference to Related Applications> This application claims the benefit of priority of U.S. Patent Application No. 62 / 991,236, filed on March 18, 2020, which is incorporated herein by reference for all purposes.

Background Art

[0002] This disclosure relates to a method of forming semiconductor devices on a semiconductor substrate. More specifically, this disclosure relates to the conditioning of a substrate processing chamber.

[0003] In the formation of semiconductor devices, a plasma processing chamber may be used to process a substrate. Residues accumulate within the plasma processing chamber. The residues can be removed by a cleaning process during the processing of each substrate. Further, components of the plasma processing chamber may be corroded by plasma processing. A coating may be used to protect the components from corrosion.

Summary of the Invention

[0004] To achieve the foregoing objectives and in accordance with the purposes of this disclosure, a method for processing one or more substrates within a plasma processing chamber is provided. A plurality of cycles are provided, each cycle including providing a pre - coat process, processing at least one substrate within the plasma processing chamber, and cleaning the plasma processing chamber. Providing the pre - coat process includes cycles of depositing one or more silicon - containing pre - coat layers and cycles of depositing carbon - containing pre - coat layers.

[0005] In another embodiment, a method is provided for preparing a semiconductor processing chamber for processing a substrate, wherein the preparation is performed before the substrate is placed in the semiconductor processing chamber. A precoat process is provided, which comprises one or more cycles of depositing a silicon-containing precoat layer and depositing a carbon-containing precoat layer.

[0006] These and other features of the Disclosure are described in more detail in the following detailed description of the Disclosure and in conjunction with the following drawings. [Brief explanation of the drawing]

[0007] In the drawings attached to this disclosure, the information is provided for illustrative purposes only, not for limitation. In the drawings, similar reference numerals refer to similar elements.

[0008] [Figure 1] Figure 1 is a high-level flowchart of an embodiment.

[0009] [Figure 2A] Figure 2A is a schematic cross-sectional view of a portion of the components processed according to the embodiment. [Figure 2B] Figure 2B is a schematic cross-sectional view of a portion of the components processed according to the embodiment. [Figure 2C] Figure 2C is a schematic cross-sectional view of a portion of the components processed according to the embodiment. [Figure 2D] Figure 2D is a schematic cross-sectional view of a portion of the components processed according to the embodiment.

[0010] [Figure 3] Figure 3 is a schematic diagram of an etching chamber that may be used in the embodiment.

[0011] [Figure 4] Figure 4 is a schematic diagram of a computer system that may be used when carrying out an embodiment. [Modes for carrying out the invention]

[0012] This disclosure will be described in detail with reference to several embodiments shown in the accompanying drawings. Many specific details are described below to provide a complete understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure is implementable even without some or all of these specific details. In other examples, well-known processes and / or structures are not described in detail so as not to unnecessarily obscure this disclosure.

[0013] Figure 1 is a high-level flowchart of an embodiment for processing a substrate. In an exemplary embodiment, to improve the processing uniformity of the substrate, a precoat is formed in the plasma processing chamber before the substrate is placed in the plasma processing chamber (step 104). The precoat is formed by one or more cycles of precoating, which involves depositing a silicon-containing precoat (step 108) and depositing a carbon-containing precoat (step 112). After one or more cycles, the precoat formation is completed (step 104).

[0014] In an exemplary recipe for depositing a silicon-containing precoat (step 108), a silicon deposition gas consisting of 100 sccm of SiCl4, 200 sccm of O2, and 300 sccm of Ar is flowed into a plasma processing chamber. The silicon deposition gas is converted into plasma by supplying 1000 watts, 13.6 megahertz (MHz) TCP power. A transformer-coupled capacitance adjustment (TCCT) matching is supplied. The chamber pressure is set to 10 mTorr. As a result, a silicon oxide-based precoat layer is deposited by depositing the silicon-containing precoat (step 108).

[0015] In an exemplary recipe for depositing a carbon-containing precoat (step 112), a carbon deposition gas containing 150 sccm of fluoromethane (CH3F) and 150 sccm of fluoroform (CHF3) is flowed into a plasma processing chamber. The carbon deposition gas is converted into plasma by supplying 1600 watts, 13.6 MHz transformer-coupled plasma (TCP) power. A transformer-coupled capacity adjustment (TCCT) matching of 0.5 is supplied. The chamber pressure is set to 10 mTorr. In other embodiments, the carbon deposition gas may contain other hydrocarbons, carbon fluorides, or hydrofluorocarbons.

[0016] Figure 2A is a cross-sectional view of component 200, including a component body 204 that forms part of a plasma processing chamber in an embodiment. In this embodiment, the component body 204 is made of aluminum. The aluminum may be an aluminum alloy. In other embodiments, the component body may be made of another material, such as stainless steel. A yttrium oxide coating 208 is present on the surface of the component body 204 and provides a protective coating. A silicon-containing precoat layer 212 is on the yttrium oxide coating 208. A carbon-containing precoat layer 216 is on the silicon-containing precoat layer 212. In other embodiments, there are two additional layers on the yttrium oxide coating 208: a silicon-containing precoat layer 212 and a carbon-containing precoat layer 216.

[0017] After forming the silicon-containing precoat layer 212 and the carbon-containing precoat layer 216 on the component body 204 which forms part of the plasma processing chamber, the substrate is placed in the plasma processing chamber (step 116). The substrate may be a silicon wafer. After placing the substrate in the plasma processing chamber, the substrate is processed (step 120). The processing may be an etching process. The etching process may etch a dielectric layer or a conductive layer. In such a process, an etching gas may be supplied. The etching gas is formed in the plasma. In this embodiment, the silicon-containing layer is etched. The carbon-containing precoat layer 216 is resistant to etching of the silicon-containing layer. The carbon-containing precoat layer 216 protects the yttrium oxide coating 208. On the other hand, in the absence of the carbon-containing precoat layer 216, the silicon-containing precoat layer 212 will be etched more rapidly in etching of the silicon-containing layer on the substrate, exposing the yttrium oxide coating 208 to etching of the silicon-containing layer.

[0018] Figure 2B is a cross-sectional view of component 200 after the silicon-containing layer has been etched. A portion of the carbon-containing precoat layer 216 has been etched away. However, since the carbon-containing precoat layer 216 is etch-resistant to the etching of the silicon-containing layer, a portion of the carbon-containing precoat layer 216 remains.

[0019] In this embodiment, the silicon-containing layer on the substrate is etched, followed by the etching or removal of the carbon-containing layer on the substrate. In this embodiment, the carbon-containing layer is an amorphous carbon mask used to pattern the silicon-containing layer during etching. In the absence of the silicon-containing precoat layer 212, the yttrium oxide coating 208 would be damaged during etching or removal of the carbon-containing layer on the substrate.

[0020] FIG. 2C is a cross-sectional view of component 200 after the carbon-containing layer has been etched or peeled off. The carbon-containing precoat layer 216 has been removed, and a part of the silicon-containing precoat layer 212 has been etched away. However, since the silicon-containing precoat layer 212 is resistant to etching during the etching or peeling of the carbon-containing layer, a part of the silicon-containing precoat layer 212 remains.

[0021] After processing the substrate (step 120), the substrate is removed from the plasma processing chamber (step 124). After removing the substrate, the interior of the plasma processing chamber is cleaned (step 128). In this embodiment, since the substrate is removed (step 124) and a new substrate is not installed in the plasma processing chamber, the cleaning process is a waferless cleaning.

[0022] In this embodiment, since the carbon-containing precoat layer 216 has been completely etched away, the remaining silicon-containing precoat layer 212 is removed by cleaning the plasma processing chamber (step 128). In this embodiment, in order to remove the remaining silicon-containing precoat layer 212, a silicon-containing precoat layer stripping gas is flowed into the plasma processing chamber. In this embodiment, in order to strip and remove silicon oxide, the silicon-containing precoat layer stripping gas contains 30 sccm to 500 sccm of nitrogen trifluoride (NF3) and 0 sccm to 200 sccm of argon (Ar). Plasma is generated from the silicon-containing precoat layer stripping gas. In this embodiment, this plasma formation is realized by supplying an excitation high-frequency (RF) of 2000 watts and a frequency of 13.6 megahertz (MHz). The plasma is maintained until the remaining silicon-containing precoat layer 212 is removed. FIG. 2D is a cross-sectional view of component 200 after the remaining silicon-containing precoat layer 212 has been removed.

[0023] By cleaning the plasma processing chamber (step 128), foreign substances deposited during substrate processing (step 120) are removed, and all remaining precoats are stripped. After cleaning the plasma processing chamber (step 128), the process returns to the step of providing a precoat (step 104) (step 132), and the cycle is repeated. The above cycle is repeated multiple times as necessary or desired.

[0024] This embodiment enables a thinner precoat. When using only a silicon-containing precoat, for example, a single layer of silicon oxide precoat, a thick precoat is required in the etching process for etching silicon oxynitride (SiON). This is because the SiON etching process significantly etches the silicon-containing precoat. The thicker the SiON layer is etched, the more a thicker single layer of silicon-containing precoat coating is required. If a single layer of silicon oxide precoat is too thick, more time is required to deposit a thicker precoat and more time is required to remove that thicker precoat, resulting in a decrease in throughput. Furthermore, as the silicon oxide precoat becomes thicker, the structural stability decreases, increasing the chance of the silicon oxide precoat peeling off during processing and increasing wafer defects. Additionally, if the coating of a single layer of silicon oxide precoat is too thick, the substrate may be unnecessarily dechucked during processing. Unnecessary dechucking can generate particles that may dirty the substrate. The particles can be generated when the substrate hits the edge ring. Furthermore, unnecessary dechucking may also stop the process if the misalignment caused by dechucking is large enough to cause misalignment of the substrate on the transfer arm.

[0025] This embodiment provides two thin precoats of different materials, one containing silicon and the other containing carbon. As described above, the carbon-containing precoat layer 216 provides improved etching resistance when etching the silicon, and the silicon-containing precoat layer 212 provides improved etching resistance when etching or stripping the carbon-containing layer. As a result, a thinner overall precoat is required. In this embodiment, since all the carbon-containing precoat layers 216 are removed, only the thin silicon-containing precoat layer 212 needs to be washed off (step 128), allowing for a rapid cleaning process.

[0026] On the other hand, the thin silicon-containing precoat layer 212 and carbon-containing precoat layer 216 provide sufficient protection, so the yttrium oxide coating 208 is protected and not exposed to the plasma. By preventing the yttrium oxide coating 208 from being exposed to the plasma, the silicon-containing precoat layer 212 and carbon-containing precoat layer 216 prevent defects caused by particles generated by the interaction between the yttrium oxide coating 208 and the plasma. Furthermore, the silicon-containing precoat layer 212 and carbon-containing precoat layer 216 improve wafer-to-wafer reproducibility by ensuring that the chamber conditions are the same for each substrate being processed. In addition, the silicon-containing precoat layer 212 and carbon-containing precoat layer 216 reduce defects by covering foreign matter in the plasma processing chamber.

[0027] In another embodiment, when providing a precoat (step 104), a carbon-containing precoat is deposited first (step 112), followed by a silicon-containing precoat (step 108). In such an embodiment, during substrate processing (step 120), the organic layer on the substrate is first etched, patterned, or peeled off. Next, the silicon-containing layer on the substrate is etched. The silicon-containing precoat provides protection when the organic layer on the substrate is etched, patterned, or peeled off. The silicon-containing precoat is etched off, and the carbon-containing precoat provides protection when the silicon-containing layer on the substrate is etched.

[0028] In this embodiment, to clean the chamber (step 128), since the silicon-containing precoat is removed during the etching of the silicon-containing layer on the substrate, only the remaining carbon-containing precoat needs to be removed. To clean the carbon-containing precoat, the cleaning gas contains 40-200 sccm of oxygen (O2). Plasma is generated from the cleaning gas by supplying an excitation RF at 1000 watts and a frequency of 13.6 MHz. In this embodiment, no bias is applied. The cleaning process is then terminated.

[0029] In this embodiment, the substrate can be processed such that the organic layer is processed first, followed by the silicon-containing layer. In other embodiments, the substrate may have two or more alternating carbon-containing and silicon-containing layers. In such embodiments, providing the precoat (step 104) includes at least two cycles of depositing a silicon-containing precoat (step 108) and depositing a carbon-containing precoat (step 112).

[0030] In various embodiments, the silicon-containing precoat layer 212 contains silicon oxide but does not contain carbon. In various embodiments, the carbon-containing precoat layer 216 contains at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride, and does not contain silicon. In various embodiments, the blank wafer may be placed in the plasma processing chamber before cleaning the chamber (step 128) so that the blank wafer covers and protects the chuck during the cleaning of the chamber (step 128). In other embodiments, the blank wafer may remain in the plasma processing chamber during the provision of the precoat (step 104).

[0031] Figure 3 is a schematic diagram of an example of a plasma processing system 300 that may be used in an embodiment. The plasma processing system 300 may be used to process a substrate 301 according to one embodiment. The plasma processing system 300 includes a plasma reactor 302 having a plasma processing chamber 304 surrounded by chamber walls 362. A plasma power supply 306, tuned by a plasma matching network 308, powers a TCP coil 310 located near a power window 312, and generates plasma 314 in the plasma processing chamber 304 by supplying inductively coupled power. The TCP coil (upper power supply) 310 may be configured to generate a uniform diffusion profile within the plasma processing chamber 304. For example, the TCP coil 310 may be configured to generate a toroidal distribution in the plasma 314. The power window 312 is installed to separate the TCP coil 310 from the plasma processing chamber 304, while allowing energy to pass from the TCP coil 310 to the plasma processing chamber 304. The wafer bias voltage power supply 316, adjusted by the bias matching network 318, powers the electrode 320 and sets the bias voltage on the substrate 301. The electrode 320 provides a chuck for the substrate 301 and functions as an electrostatic chuck. The substrate temperature controller 366 is controllably connected to the Peltier heater / cooler 368. Controller 324 controls the plasma power supply 306, the substrate temperature controller 366, and the wafer bias voltage power supply 316.

[0032] The plasma power supply 306 and the wafer bias voltage power supply 316 may be configured to operate at specific high frequencies such as 13.56 MHz, 27 MHz, 2 MHz, 1 MHz, 400 kHz, or a combination thereof. The plasma power supply 306 and the wafer bias voltage power supply 316 may be appropriately sized to supply power within a range to achieve the desired processing performance. For example, in one embodiment, the plasma power supply 306 may supply power in the range of 50 to 5000 W, and the wafer bias voltage power supply 316 may supply a bias voltage in the range of 20 to 2000 V. Furthermore, the TCP coil 310 and / or electrode 320 may include two or more sub-coils or sub-electrodes. The two or more sub-coils or sub-electrodes may be powered by one power supply or by multiple power supplies.

[0033] As shown in Figure 3, the plasma processing system 300 further includes a gas source 330. The gas source 330 supplies gas or remote plasma to a nozzle-shaped supply port 336. Process gas and by-products are removed from the plasma processing chamber 304 via a pressure control valve 342 and a pump 344. The pressure control valve 342 and pump 344 also function to maintain a specific pressure within the plasma processing chamber 304. The gas source 330 is controlled by a controller 324. Embodiments can be carried out using Kiyo®, manufactured by Lam Research, Inc. (Fremont, California).

[0034] Figure 4 is a high-level block diagram showing a computer system 400. The computer system 400 is suitable for implementing the controller 324 used in the embodiment. The computer system can take many physical forms, ranging from integrated circuits, printed circuit boards, and small portable devices to massive supercomputers. The computer system 400 may include one or more processors 402, and may further include an electronic display device 404 (for displaying graphics, text, and other data), main memory 406 (e.g., random access memory (RAM)), storage device 408 (e.g., hard disk drive), removable storage device 410 (e.g., optical disc drive), user interface device 412 (e.g., keyboard, touchscreen, keypad, mouse, or other pointing device), and communication interface 414 (e.g., wireless network interface). The communication interface 414 enables the transfer of software and data between the computer system 400 and external devices via links. The system may also include a communication infrastructure 416 (e.g., communication bus, crossover bar, or network) connected to the aforementioned devices / modules.

[0035] The information transmitted via the communication interface 414 may be in the form of electronic, electromagnetic, or optical signals, or other signal forms that can be transmitted and received by the communication interface 414 via a communication link that can be implemented using wires or cables, optical fibers, telephone lines, mobile phone links, radio frequency links, and / or other communication channels. Such a communication interface is intended to allow one or more processors 402 to receive information from or output information to the network while the above method steps are being carried out. Furthermore, embodiments of the method can be executed by processors alone or in combination with remote processors that share part of the processing over a network such as the Internet.

[0036] The term “non-temporary computer-readable medium” is generally used to refer to media such as main memory, auxiliary memory, removable storage devices, and storage devices, including hard disks, flash memory, disk drive memory, CD-ROMs, and other forms of persistent memory, and should not be interpreted to include temporary objects such as carriers or signals. Examples of computer code include machine code, such as that generated by a compiler, and files containing higher-level code executed by a computer using an interpreter. Computer-readable medium may also be computer code transmitted by computer data signals, which represent a set of instructions embodied in a carrier and can be executed by a processor.

[0037] In this embodiment, the precoat may be formed on the chamber wall 362, power window 312, supply port 336, electrostatic chuck, and liner within the plasma reactor 302.

[0038] While this disclosure has described several embodiments, there are many variations, modifications, substitutions, and alternative equivalents that fall within the scope of this disclosure. It should also be noted that there are many alternative ways of carrying out the methods and apparatus of this disclosure. Therefore, the following appended claims are intended to be interpreted as encompassing all such variations, modifications, substitutions, and alternative equivalents that fall within the true spirit and scope of this disclosure. Furthermore, this disclosure can be implemented in the following forms. [Form 1] A method for processing one or more substrates in a plasma processing chamber, wherein the method includes a plurality of cycles, each cycle being (a) Depositing a silicon-containing precoat layer, Deposition of a carbon-containing precoat layer To provide a precoat treatment that includes one or more cycles of, (b) Processing at least one substrate in the plasma processing chamber, (c) Cleaning the plasma processing chamber Methods that include... [Form 2] A method according to Embodiment 1, wherein the silicon-containing precoat layer is a silicon oxide-based precoat layer. [Form 3] A method according to Embodiment 1, wherein the silicon-containing precoat layer does not contain carbon. [Form 4] A method according to Embodiment 1, wherein the carbon-containing precoat layer does not contain silicon. [Form 5] A method according to Embodiment 1, wherein the carbon-containing precoat layer comprises at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride. [Form 6] A method according to Embodiment 1, wherein the carbon-containing precoat layer is deposited Discharging carbon-containing sediment gas containing at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride, Forming the aforementioned carbon-containing deposited gas in the plasma, To stop the flow of the carbon-containing sedimentary gas and Methods that include... [Form 7] A method according to Embodiment 1, wherein the silicon-containing precoat layer is deposited Flowing silicon-containing sedimentary gas, Forming the aforementioned silicon-containing deposited gas in the plasma, To stop the flow of the silicon-containing sediment gas and Methods that include... [Form 8] A method according to Embodiment 7, wherein the silicon-containing sedimentary gas comprises a silicon-containing component and an oxygen-containing component. [Form 9] A method according to Embodiment 1, wherein the carbon-containing precoat layer is deposited before the silicon-containing precoat layer is deposited. [Form 10] A method according to Embodiment 1, wherein the carbon-containing precoat layer is deposited after the silicon-containing precoat layer is deposited. [Form 11] A method according to Embodiment 1, wherein the deposition of the carbon-containing precoat layer and the deposition of the silicon-containing precoat layer are not performed simultaneously. [Form 12] The method according to Embodiment 1, wherein the precoat treatment is Depositing a silicon-containing precoat layer, Depositing a carbon-containing precoat layer and A method that includes at least two cycles of the process. [Form 13] A method according to Embodiment 1, wherein the processing of at least one substrate in the plasma processing chamber is performed by processing at least two substrates in the plasma processing chamber. [Form 14] A method according to Embodiment 1, wherein the plasma processing chamber includes a metal body. [Form 15] A method according to Embodiment 14, wherein the plasma processing chamber includes a protective coating on the metal body. [Form 16] A method according to Embodiment 1, wherein the plasma processing chamber comprises a stainless steel or aluminum body. [Form 17] A method according to Embodiment 1, wherein the plasma processing chamber includes an aluminum body. [Form 18] A method according to Embodiment 17, wherein the plasma processing chamber further comprises a protective coating on the aluminum body. [Form 19] A method according to Embodiment 18, wherein the protective coating comprises yttrium oxide. [Form 20] A method for adjusting a semiconductor processing chamber for processing a substrate, wherein the adjustment is performed before the substrate is placed in the semiconductor processing chamber, and the method is The provision includes providing a pre-coat treatment, wherein the pre-coat treatment is Depositing a silicon-containing precoat layer, Deposition of a carbon-containing precoat layer A method comprising one or more cycles of the process. [Form 21] A method according to Embodiment 20, wherein the silicon-containing precoat layer is a silicon oxide-based precoat layer. [Form 22] A method according to Embodiment 20, wherein the silicon-containing precoat layer is carbon-free. [Form 23] A method according to Embodiment 20, wherein the carbon-containing precoat layer is silicon-free. [Form 24] A method according to Embodiment 20, wherein the carbon-containing precoat layer is deposited Discharging carbon-containing sediment gas containing at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride, Forming the aforementioned carbon-containing deposited gas in the plasma, To stop the flow of the carbon-containing sedimentary gas and Methods that include... [Form 25] A method according to Embodiment 20, wherein the silicon-containing precoat layer is deposited Flowing silicon-containing sedimentary gas, Forming the aforementioned silicon-containing deposited gas in the plasma, To stop the flow of the silicon-containing sediment gas and Methods that include... [Form 26] A method according to Embodiment 20, wherein the semiconductor processing chamber includes a metal body. [Form 27] A method according to Embodiment 26, wherein the semiconductor processing chamber includes a protective coating on the metal body. [Form 28] A method according to Embodiment 20, wherein the semiconductor processing chamber comprises a stainless steel or aluminum body. [Form 29] A method according to Embodiment 20, wherein the semiconductor processing chamber includes an aluminum body. [Form 30] A method according to Embodiment 29, wherein the semiconductor processing chamber further includes a protective coating on the aluminum body. [Form 31] A method according to Embodiment 30, wherein the protective coating comprises yttrium oxide.

Claims

1. A method for processing one or more substrates in a plasma processing chamber, wherein the method includes a plurality of cycles, each cycle being (a) Depositing a silicon-containing precoat layer, The method involves depositing a carbon-containing precoat layer on the silicon-containing precoat layer, wherein the deposit of the carbon-containing precoat layer occurs after the deposit of the silicon-containing precoat layer. To provide a precoat treatment that includes one or more cycles of, (b) Processing at least one substrate in the plasma processing chamber, (c) Cleaning the plasma processing chamber and A method comprising the above, wherein the carbon-containing precoat layer does not contain silicon.

2. A method according to claim 1, wherein the silicon-containing precoat layer is a silicon oxide-based precoat layer.

3. A method according to claim 1, wherein the silicon-containing precoat layer does not contain carbon.

4. A method according to claim 1, wherein the carbon-containing precoat layer comprises at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride.

5. The method according to claim 1, wherein the carbon-containing precoat layer is deposited Discharging a carbon-containing deposit gas containing at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride, Forming the aforementioned carbon-containing deposited gas in the plasma, To stop the flow of the carbon-containing sedimentary gas and Methods that include...

6. The method according to claim 1, wherein the silicon-containing precoat layer is deposited Flowing silicon-containing sedimentary gas, Forming the aforementioned silicon-containing deposited gas in the plasma, To stop the flow of the silicon-containing sediment gas and Methods that include...

7. A method according to claim 6, wherein the silicon-containing sedimentary gas comprises a silicon-containing component and an oxygen-containing component.

8. A method according to claim 1, wherein the deposition of the carbon-containing precoat layer and the deposition of the silicon-containing precoat layer are not performed simultaneously.

9. The method according to claim 1, wherein the precoat treatment is Depositing a silicon-containing precoat layer, Depositing a carbon-containing precoat layer and A method that includes at least two cycles of the process.

10. A method according to claim 1, wherein the processing of at least one substrate in the plasma processing chamber is performed by processing at least two substrates in the plasma processing chamber.

11. A method according to claim 1, wherein the plasma processing chamber includes a metal body.

12. A method according to claim 11, wherein the plasma processing chamber includes a protective coating on the metal body.

13. A method according to claim 1, wherein the plasma processing chamber comprises a stainless steel or aluminum body.

14. A method for processing one or more substrates in a plasma processing chamber, wherein the method comprises a plurality of cycles, each cycle being (a) Depositing a silicon-containing precoat layer, The method involves depositing a carbon-containing precoat layer on the silicon-containing precoat layer, wherein the deposit of the carbon-containing precoat layer occurs after the deposit of the silicon-containing precoat layer. To provide a precoat treatment that includes one or more cycles of, (b) Processing at least one substrate in the plasma processing chamber, (c) Cleaning the plasma processing chamber and Includes, The plasma processing chamber includes an aluminum body, The plasma processing chamber further includes a protective coating on the aluminum body, A method comprising the protective coating containing yttrium oxide.

15. A method for adjusting a semiconductor processing chamber for processing a substrate, wherein the adjustment is performed before the substrate is placed in the semiconductor processing chamber, and the method is The provision includes providing a pre-coat treatment, wherein the pre-coat treatment is Depositing a silicon-containing precoat layer, The method involves depositing a carbon-containing precoat layer on the silicon-containing precoat layer, wherein the deposit of the carbon-containing precoat layer occurs after the deposit of the silicon-containing precoat layer. Includes one or more cycles of, A method wherein the carbon-containing precoat layer does not contain silicon.

16. A method according to claim 15, wherein the silicon-containing precoat layer is a silicon oxide-based precoat layer.

17. A method according to claim 15, wherein the silicon-containing precoat layer is carbon-free.

18. The method according to claim 15, wherein the carbon-containing precoat layer is deposited Discharging a carbon-containing deposit gas containing at least one of hydrofluorocarbons, hydrocarbons, or carbon fluoride, Forming the aforementioned carbon-containing deposited gas in the plasma, To stop the flow of the carbon-containing sedimentary gas and Methods that include...

19. The method according to claim 15, wherein the silicon-containing precoat layer is deposited Flowing silicon-containing sedimentary gas, Forming the aforementioned silicon-containing deposited gas in the plasma, To stop the flow of the silicon-containing sediment gas and Methods that include...

20. A method according to claim 15, wherein the semiconductor processing chamber includes a metal body.

21. A method according to claim 20, wherein the semiconductor processing chamber includes a protective coating on the metal body.

22. A method according to claim 15, wherein the semiconductor processing chamber comprises a stainless steel or aluminum body.

23. A method according to claim 15, wherein the semiconductor processing chamber includes an aluminum body.

24. A method according to claim 23, wherein the semiconductor processing chamber further comprises a protective coating on the aluminum body.

25. A method for adjusting a semiconductor processing chamber for processing a substrate, wherein the adjustment is performed before the substrate is placed in the semiconductor processing chamber, and the method is The provision includes providing a pre-coat treatment, wherein the pre-coat treatment is Depositing a silicon-containing precoat layer, The method involves depositing a carbon-containing precoat layer on the silicon-containing precoat layer, wherein the deposit of the carbon-containing precoat layer occurs after the deposit of the silicon-containing precoat layer. Includes one or more cycles of, The semiconductor processing chamber includes an aluminum body, The semiconductor processing chamber further includes a protective coating on the aluminum body, A method comprising the protective coating containing yttrium oxide.

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