Indication device

Abstract

To provide a display device that can prevent external moisture from penetrating while placing an optical electronic device inside a display area.SOLUTION: Embodiments of the disclosure relate to a display device and, more specifically, may provide a display device capable of effectively preventing external moisture from penetrating into a display area through a camera hole by including the display area included in a light emitting element, the camera hole positioned in the display area, and a first non-display area positioned between the display area and the camera hole and including a moisture-preventing structure positioned in the first non-display area.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The embodiments of this disclosure relate to a display device. [Background technology]

[0002] With technological advancements, display devices can provide not only image display functions but also imaging functions and various sensing functions. Therefore, display devices must be equipped with optical electronic devices (also called light receivers or sensors), such as cameras and sensing sensors.

[0003] Since optical electronic devices must receive light from the front of the display device, they must be installed in a location where light reception is advantageous. Therefore, the camera (camera lens) and sensing sensor may be exposed on the front of the display device. This may result in a wider bezel on the display panel or the formation of a notch in the display area of ​​the display panel, where the camera or sensing sensor is installed.

[0004] When a wide bezel or notch is positioned in front of the display panel, a problem may arise in which the display area for displaying images on the display panel is reduced. [Overview of the project] [Problems that the invention aims to solve]

[0005] In the field of display device technology, research is being conducted on technologies for incorporating optical electronic devices such as cameras and sensing sensors without reducing the area of ​​the display panel's display area. Therefore, the inventors of this disclosure have invented a display device in which the optical electronic device is located inside the display area, rather than in the bezel area surrounding the display area, while still allowing the optical electronic device to receive light normally. However, such a display device had the problem that the area where the optical electronic device is located is vulnerable to the penetration of external moisture. Therefore, the inventors of this disclosure have now invented a display device that can prevent the penetration of external moisture while still positioning the optical electronic device inside the display area.

[0006] Embodiments of this disclosure can provide a display device that includes a camera hole located within a display area and a first non-display area located between the display area and the camera hole, and includes a moisture-proof structure disposed in the first non-display area.

[0007] The embodiments of this disclosure can provide a display device that includes a moisture-proof structure and can effectively prevent external moisture from penetrating. [Means for solving the problem]

[0008] Embodiments of this disclosure can provide a display device comprising a substrate, a dam, a discontinuity, a plurality of insulating films, and a moisture-proof structure. The substrate may include a display area, a camera hole, and a first non-display area. The display area may contain a plurality of light-emitting elements, including a light-emitting layer. The camera hole may be located within the display area. The first non-display area may be located between the display area and the camera hole. The dam may be located within the first non-display area. The discontinuity may be located within the first non-display area. The plurality of insulating films may be arranged on the substrate and located beneath the plurality of light-emitting elements. The moisture-proof structure may be located within the first non-display area. The moisture-proof structure may include one undercut area among the plurality of insulating films.

[0009] Embodiments of this disclosure can provide a display device that includes a display area and a non-display area adjacent to the display area, a camera hole spaced apart from the display area on a plane and positioned adjacent to the non-display area, a light-emitting element positioned to overlap with the display area on a plane, a dam structure positioned in the non-display area, and a first moisture-proof structure positioned adjacent to the dam structure, comprising a plurality of metal layers.

[0010] In the display device according to the embodiment of the present disclosure, an auxiliary metal layer may be further provided, which is located below a plurality of metal layers of the first moisture-proof structure.

[0011] According to the embodiments of this disclosure, a display device can be provided that prevents external moisture from penetrating and causing defects by including a moisture-proof structure arranged in the first non-display area.

[0012] According to the embodiments of this disclosure, a display device that enables low-power operation can be provided by preventing external moisture from penetrating and reducing the lifespan of the light-emitting element or causing defects in the light-emitting element. [Brief explanation of the drawing]

[0013] [Figure 1] This is an exemplary plan view of a display device according to an embodiment of the present disclosure. [Figure 2] This is an exemplary system configuration diagram of a display device according to an embodiment of the present disclosure. [Figure 3] This document shows an exemplary configuration diagram of a display device according to an embodiment of the present disclosure and an exemplary equivalent circuit diagram of a subpixel. [Figure 4] This is an illustrative diagram showing an enlarged view of area A in Figure 1. [Figure 5] This is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 6] This is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 7] This is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 8] Figures 5 to 7 show exemplary cross-sectional views of moisture-proof structures. [Figure 9] Figures 5 to 7 show exemplary cross-sectional views of moisture-proof structures. [Figure 10] This is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 11] This is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 12] Figures 10 and 11 show exemplary cross-sectional views of a moisture-proofing structure. [Figure 13] This is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 14]It is an exemplary cross-sectional view of the moisture barrier structure shown in FIG. 13. [Figure 15] It is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 16] It is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 17] It is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 18] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 19] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 20] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 21] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 22] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 23] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 24] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 25] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 26] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 27] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 28] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 29] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIGS. 15 to 17. [Figure 30] It is an exemplary cross-sectional view of a display device according to an embodiment of the present disclosure. [Figure 31] It is an exemplary cross-sectional view of the moisture barrier structure shown in FIG. 30. [Figure 32] Figure 30 is an illustrative cross-sectional view of a moisture-proofing structure. [Figure 33] Figure 30 is an illustrative cross-sectional view of a moisture-proofing structure. [Figure 34] Figure 30 is an illustrative cross-sectional view of a moisture-proofing structure. [Figure 35] Figure 30 is an illustrative cross-sectional view of a moisture-proofing structure. [Figure 36] Figure 30 is an illustrative cross-sectional view of a moisture-proofing structure. [Modes for carrying out the invention]

[0014] Some embodiments of this disclosure will be described in detail below with reference to illustrative drawings. In assigning reference numerals to components in each drawing, the same reference numerals may be used for the same component, even if they appear in different drawings, as far as possible. In describing this disclosure, if a specific description of a relevant known configuration or function is deemed to obscure the gist of this disclosure, such detailed description may be omitted. Where "includes," "has," "performs," ​​etc., as used herein, other parts may be added unless "only" is used. Where a component is expressed singularly, it may include multiple components unless otherwise explicitly stated.

[0015] In addition, terms such as 1, 2, A, B, (a), and B may be used to describe the components of this disclosure. These terms are used to distinguish a component from other components, and the terms do not limit the nature, order, procedure, or number of the components.

[0016] In descriptions of the positional relationships of components, when it is stated that two or more components are "linked," "joined," or "connected," it should be understood that while two or more components can directly "link," "join," or "connect," they can also be "linked," "joined," or "connected" through the "intermediation" of another component. Here, the other component may be included in one or more of the two or more components that are "linked," "joined," or "connected" to each other.

[0017] In descriptions of temporal relationships concerning constituent elements, operating methods, or manufacturing methods, if the temporal sequence or flow of relationships is described using phrases such as "after," "following," "after," or "before," it can include non-continuous cases unless "immediately" or "directly" is used.

[0018] In describing the components of this disclosure, the shapes, sizes, numerical values ​​(e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, and number of components shown in the accompanying drawings are merely illustrative examples and the disclosure is not limited thereto.

[0019] The numerical values, including the size and thickness of each component shown in the drawings, are provided for illustrative purposes only and are not limited to the sizes and thicknesses of the components shown in this disclosure. It should be noted that relative numerical values, including the relative sizes, positions, and thicknesses of components shown in the various drawings attached to this disclosure, are also part of this disclosure.

[0020] On the other hand, when referring to numerical values ​​or corresponding information (e.g., levels) for components, it can be interpreted that these numerical values ​​or corresponding information include a range of errors that may arise due to various factors (e.g., process factors, internal or external shocks, noise, etc.), even without further explicit mention.

[0021] Various embodiments of this disclosure will be described in detail below with reference to the attached drawings.

[0022] Figure 1 is a plan view of a display device 100 according to an embodiment of the present disclosure.

[0023] Referring to Figure 1, the display device 100 may include a display area DA and a non-display area NDA. The non-display area NDA may include a second non-display area NDA2 surrounding the display area DA. The display area DA is an area for displaying an image and may be located on a plurality of light-emitting elements. The second non-display area NDA2 may be a bezel area located on the outer edge of the display area DA of the display device 100. The second non-display area NDA2 may contain drive circuits such as data drive circuits and gate drive circuits for driving the plurality of light-emitting elements located on the display area DA, and may also contain signal lines such as data lines and gate lines.

[0024] The display device 100 may include a display area DA, a camera hole CH located within the display area DA, and a first non-display area NDA1 located between the display area DA and the camera hole CH. Various optical electronic devices provided in the display device 100 can be located in the camera hole CH. For example, a camera may be located beneath the substrate of the display device 100, but may be positioned overlapping the camera hole CH on a plane. In the embodiment of the present disclosure, the display device 100 can maximize the display area DA by reducing the area of ​​the second non-display area NDA2, which is a bezel area, because the camera hole CH is located within the display area DA.

[0025] The camera hole CH may be a single hole as shown in Figure 1, but is not limited to this and can be arranged in various ways. For example, one or two holes may be arranged inside the display area DA, with a camera in the first hole and a distance sensing sensor, face recognition sensor, or additional camera in the second hole.

[0026] The first non-display area NDA1 can surround the camera hole CH. For example, the first non-display area NDA1 can be located on the periphery of the camera hole CH and can surround all or part of the periphery of the camera hole CH. Signal lines for transmitting signals to light-emitting elements located in the display area DA can be located in the first non-display area NDA1. The first non-display area NDA1 can be called the bezel area of ​​the camera hole CH, for example, it can be called the variable bezel area.

[0027] Figure 2 is a system configuration diagram of the display device 100 according to an embodiment of the present disclosure. In the following description of the embodiment shown in Figure 2, unless otherwise specified, the explanation is the same as that given with reference to Figure 1 above.

[0028] Referring to Figure 2, the display device 100 may include a display panel 110 and a display driver circuit as components for displaying images.

[0029] The display driving circuit is a circuit for driving the display panel 110 and may include a data driving circuit DDC, a gate driving circuit GDC, and a display controller D-CTR.

[0030] The display panel 110 may include a display area DA on which an image is displayed and a second non-display area NDA2 on which no image is displayed. The second non-display area NDA2 may be the outer area of ​​the display area DA, or it may be called the bezel area. All or part of the second non-display area NDA2 may be an area visible from the front of the display device 100, or it may be a curved area that is not visible from the front of the display device 100.

[0031] The display panel 110 may include a camera hole CH located within the display area DA and a first non-display area NDA1 located between the display area DA and the camera hole CH.

[0032] The display panel 110 may include a substrate SUB and a plurality of subpixels SP arranged on the substrate SUB. Furthermore, the display panel 110 may include various types of signal lines to drive the plurality of subpixels SP.

[0033] The display device 100 according to the embodiments of this disclosure may be a liquid crystal display device or the like, or it may be a self-emissive display device in which the display panel 110 emits light itself. When the display device 100 according to the embodiments of this disclosure is a self-emissive display device, each of the plurality of subpixels SP may include an element-emitting element. For example, the display device 100 according to the embodiments of this disclosure may be an organic light-emitting display device in which the element-emitting element is an organic light-emitting diode (OLED). As another example, the display device 100 according to the embodiments of this disclosure may be an inorganic light-emitting display device in which the element-emitting element is an inorganic-based light-emitting diode. As yet another example, the display device 100 according to the embodiments of this disclosure may be a quantum dot display device in which the element-emitting element is a quantum dot, which is a semiconductor crystal that emits light itself.

[0034] The structure of each of the multiple subpixels SP may differ depending on the type of display device 100. For example, if the display device 100 is a self-emissive display device in which the subpixels SP emit light themselves, each subpixel SP may include a light-emitting element that emits light itself, one or more transistors, and one or more capacitors.

[0035] For example, various types of signal lines may include multiple data lines DL that transmit data signals (also known as data voltages or video signals) and multiple gate lines GL that transmit gate signals (also known as scan signals).

[0036] Multiple data lines DL and multiple gate lines GL can intersect each other. Each of the multiple data lines DL can be arranged extending in a first direction. Each of the multiple gate lines GL can be arranged extending in a second direction, where the first direction is the column direction and the second direction is the row direction, or the first direction is the row direction and the second direction is the column direction.

[0037] The data drive circuit (DDC) is a circuit for driving multiple data lines (DL) and can output data signals to multiple data lines (DL). The gate drive circuit (GDC) is a circuit for driving multiple gate lines (GL) and can output gate signals to multiple gate lines (GL).

[0038] The display controller D-CTR is a device for controlling a data drive circuit DDC and a gate drive circuit GDC, and can control the drive timing for multiple data lines DL and the drive timing for multiple gate lines GL.

[0039] The display controller D-CTR can supply a data drive control signal DCS to the data drive circuit DDC to control it, and can supply a gate drive control signal GCS to the gate drive circuit GDC to control it.

[0040] The display controller D-CTR can receive input video data from the host system H-SYS and supply video data Data to the data drive circuit DDC based on the input video data.

[0041] The data drive circuit (DDC) receives digital video data (Data) from the display controller (D-CTR), converts the received video data (Data) into analog data signals, and outputs them to multiple data lines (DL).

[0042] The gate drive circuit GDC is supplied with a first gate voltage corresponding to the turn-on level voltage and a second gate voltage corresponding to the turn-off level voltage, along with various gate drive control signals GCS, and generates a gate signal, which can then be supplied to multiple gate lines GL.

[0043] For example, the data drive circuit (DDC) can be connected to the display panel 110 using the Tape Automated Bonding (TAB) method, to the bonding pads of the display panel 110 using the Chip On Glass (COG) or Chip On Panel (COP) method, or to the display panel 110 by being implemented using the Chip On Film (COF) method.

[0044] The gate drive circuit (GDC) can be connected to the display panel 110 by tape automated bonding (TAB), by chip-on-glass (COG) or chip-on-panel (COP) bonding pads on the display panel 110, or by chip-on-film (COF) bonding. Alternatively, the gate drive circuit (GDC) may be formed in the second non-display area (NDA2) of the display panel 110 as a gate-in-panel (GIP) type. The gate drive circuit (GDC) can be placed on or connected to the substrate. That is, if the gate drive circuit (GDC) is of the GIP type, it can be placed in the second non-display area (NDA2) of the substrate. If the gate drive circuit (GDC) is of the chip-on-glass (COG) type, chip-on-film (COF) type, etc., it can be connected to the substrate.

[0045] On the other hand, at least one of the data drive circuit DDC and gate drive circuit GDC may be placed in the display area DA of the display panel 110. For example, at least one of the data drive circuit DDC and gate drive circuit GDC may be placed so as not to overlap with the subpixel SP, or it may be placed so as to partially or completely overlap with the subpixel SP.

[0046] The data drive circuit (DDC) can also be connected to one side of the display panel 110 (for example, the top or bottom). Depending on the drive method, panel design, etc., the data drive circuit (DDC) can also be connected to both sides of the display panel 110 (for example, the top and bottom), or to two or more of the four sides of the display panel 110.

[0047] The gate drive circuit GDC can also be connected to one side of the display panel 110 (for example, the left or right side). Depending on the drive method, panel design, etc., the gate drive circuit GDC can be connected to both sides of the display panel 110 (for example, the left and right sides), or to two or more of the four sides of the display panel 110.

[0048] The display controller D-CTR may be implemented as a separate component from the data drive circuit DDC, or it may be implemented as an integrated circuit by being integrated together with the data drive circuit DDC.

[0049] The display controller D-CTR may be a timing controller used in conventional display technology, a control device that can perform other control functions in addition to timing control, a control device different from a timing controller, or a circuit within a control device. The display controller D-CTR may be implemented using various circuits and electronic components such as an IC (Integrated Circuit), FPGA (Field Programmable Gate Array), ASIC (Application Specific Integrated Circuit), or processor.

[0050] The display controller D-CTR can be mounted on a printed circuit board, flexible printed circuit board, etc., and can be electrically connected to the data drive circuit DDC and gate drive circuit GDC via the printed circuit board, flexible printed circuit board, etc.

[0051] The display controller D-CTR can send and receive signals with the data drive circuit DDC according to one or more predetermined interfaces. For example, the interfaces may include LVDS (Low Voltage Differential Signaling) interface, EPI (Embedded Clock Point-Point Interface) interface, SPI (Serial Peripheral Interface), etc.

[0052] The display device 100 according to the embodiment of this disclosure may include, in addition to an image display function, a touch sensor and a touch sensing circuit that senses the touch sensor to detect whether a touch has occurred by a touch object such as a finger or pen, and to detect the touch position, in order to further provide a touch sensing function.

[0053] The touch sensing circuit may include a touch drive circuit TDC that drives and senses a touch sensor to generate and output touch sensing data, and a touch controller T-CTR that can detect touch occurrences and determine the touch position using the touch sensing data.

[0054] A touch sensor may include multiple touch electrodes. The touch sensor may further include multiple touch lines for electrically connecting the multiple touch electrodes to a touch driver circuit (TDC).

[0055] The touch sensor can exist outside the display panel 110 in the form of a touch panel, or it can exist inside the display panel 110. When the touch sensor exists outside the display panel 110 in the form of a touch panel, the touch sensor is referred to as an external type. When the touch sensor is an external type, the touch panel and the display panel 110 can be manufactured separately and joined during the assembly process. An external type touch panel may include a touch panel substrate and multiple touch electrodes on the touch panel substrate.

[0056] If the touch sensor is located inside the display panel 110, it may be formed on the substrate SUB along with the signal lines and electrodes related to display driving during the manufacturing process of the display panel 110.

[0057] The touch drive circuit TDC can supply a touch drive signal to at least one of multiple touch electrodes and sense at least one of the multiple touch electrodes to generate touch sensing data.

[0058] The touch sensing circuit can perform touch sensing using either a self-capacitance sensing method or a mutual-capacitance sensing method.

[0059] When a touch sensing circuit performs touch sensing using a self-capacitance sensing method, the touch sensing circuit can perform touch sensing based on the capacitance between each touch electrode and the touch object (e.g., finger, pen, etc.). According to the self-capacitance sensing method, each of the multiple touch electrodes can act as both a driving touch electrode and a sensing touch electrode. The touch driving circuit TDC can drive all or some of the multiple touch electrodes and sense all or some of the multiple touch electrodes.

[0060] When a touch sensing circuit performs touch sensing using a mutual capacitance sensing method, it can perform touch sensing based on the capacitance between touch electrodes. In the mutual capacitance sensing method, multiple touch electrodes are divided into driving touch electrodes and sensing touch electrodes. The touch driving circuit TDC can drive the driving touch electrodes and sense the sensing touch electrodes.

[0061] The touch drive circuit TDC and touch controller T-CTR included in the touch sensing circuit may be implemented in separate devices or in a single device. Furthermore, the touch drive circuit TDC and data drive circuit DDC may be implemented in separate devices or in a single device.

[0062] The display device 100 may further include a power supply circuit that supplies various power sources to the display driving circuit and / or touch sensing circuit.

[0063] The display device 100 according to the embodiments of this disclosure may be a mobile device such as a smartphone or tablet, or it may be a monitor or television (TV) of various sizes, and is not limited thereto, and may be any type or size of display capable of displaying information or images.

[0064] Figure 3 is a configuration diagram and an equivalent circuit diagram of a subpixel of the display device 100 according to an embodiment of the present disclosure. In describing the embodiment shown in Figure 3 in the following description, unless otherwise specified, the same information is provided for in reference to Figures 1 and 2 above.

[0065] Referring to Figure 3, multiple subpixels SP may be arranged in the display area DA of the display device. The multiple subpixels SP are arranged in the display area DA, but do not necessarily have to be arranged in the first non-display area and the camera hole.

[0066] Each of the multiple subpixels SP may include a light-emitting element ED and a subpixel circuit configured to drive the light-emitting element ED.

[0067] The subpixel circuit section may include a drive transistor T1 for driving the light-emitting element ED, a scan transistor T2 for transmitting the data voltage VDATA to the first node N1 of the drive transistor T1, and a storage capacitor Cst for maintaining a constant voltage for one frame.

[0068] The drive transistor T1 may include a first node N1 to which a data voltage is applied, a second node N2 electrically connected to the light-emitting element ED, and a third node N3 to which the drive voltage VDD is applied from the drive voltage line DVL. In the drive transistor T1, the first node N1 is the gate node, the second node N2 may be the source node or the drain node, and the third node N3 may be the drain node or the source node. For the sake of explanation, in the following, we will take the case where the first node N1 is the gate node, the second node N2 may be the source node, and the third node N3 is the drain node as an example.

[0069] The light-emitting element ED may include an anode electrode AE, a light-emitting layer EL, and a cathode electrode CE. The anode electrode AE ​​may be a pixel electrode placed in each subpixel SP and can be electrically connected to the second node N2 of the drive transistor T1 of each subpixel SP. The cathode electrode CE may be a common electrode placed in common by multiple subpixels SP and may have a base voltage VSS applied to it.

[0070] For example, the anode electrode AE ​​may be a pixel electrode, and the cathode electrode CE may be a common electrode. Conversely, the anode electrode AE ​​may be a common electrode, and the cathode electrode CE may be a pixel electrode. For the sake of explanation, in the following, we will assume that the anode electrode AE ​​is a pixel electrode and the cathode electrode CE is a common electrode.

[0071] The light-emitting element ED may have a predetermined light-emitting region, which can be defined as the region where the anode electrode AE, the light-emitting layer EL, and the cathode electrode CE overlap.

[0072] For example, the light-emitting element ED may be an organic light-emitting diode (OLED), an inorganic light-emitting diode, or a quantum dot light-emitting element. If the light-emitting element ED is an organic light-emitting diode, the light-emitting layer EL in the light-emitting element ED may include an organic light-emitting layer EL containing organic material.

[0073] The scan transistor T2 is controlled to turn on and off by the scan signal SCAN, which is a gate signal applied via the gate line GL, and can be electrically connected between the first node N1 of the drive transistor T1 and the data line DL.

[0074] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the drive transistor T1.

[0075] As shown in Figure 3, the subpixel circuit section may have a 2T (Transistor) 1C (Capacitor) structure including two transistors DT and ST and one capacitor Cst, and may optionally include one or more transistors or one or more capacitors.

[0076] The storage capacitor Cst may be an external capacitor intentionally designed outside the drive transistor T1, rather than a parasitic capacitor (e.g., Cgs, Cgd) which is an internal capacitor that can exist between the first node N1 and the second node N2 of the drive transistor T1. The drive transistor T1 and the scan transistor T2 may each be either an n-type or p-type transistor.

[0077] Since the circuit elements within each subpixel SP (particularly the light-emitting elements ED, which are embodied in organic light-emitting diodes (OLEDs) containing organic materials) are vulnerable to external moisture and oxygen, a sealing layer ENCAP may be placed on the display panel 110 to prevent external moisture and oxygen from penetrating the circuit elements (particularly the light-emitting elements ED). The sealing layer ENCAP can be placed so as to cover the light-emitting elements ED.

[0078] Figure 4 is an enlarged view of area A in Figure 1. Area A in Figure 1 is an area within the display area DA, and may include the camera hole CH and its surrounding area. In the following description, when explaining the embodiment shown in Figure 4, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 3 above.

[0079] Referring to Figure 4, the camera hole CH can be located within the display area DA. For example, the camera hole CH may be an island-like structure located within the display area DA, and the display area DA can surround the camera hole CH.

[0080] The first non-display area NDA1 can surround the camera hole CH. For example, the first non-display area NDA1 can be located between the display area DA and the camera hole CH. The first non-display area NDA1 may be a non-display area located within the display area DA, and may also be a non-display area located around the camera hole CH.

[0081] A dam DAM or dam structure DAM may be located in the first non-display area NDA1. A dam DAM may refer to a structure for controlling the flow of one of several insulating films included in the display device. For example, a dam DAM may be a structure for controlling the flow of an organic insulating film located above a light-emitting element located on top of a substrate. More specifically, the insulating film may be an organic film that is part of a sealing layer that seals multiple light-emitting elements. Figure 4 shows an embodiment in which there is only one dam DAM in the first non-display area NDA1, but the disclosure is not limited to these embodiments and embodiments of the disclosure in which two or more dams are located in the first non-display area NDA1 are also included.

[0082] The dam (DAM) can be positioned to surround the camera hole CH. For example, the dam (DAM) may have a closed curve shape that completely surrounds the camera hole CH. By positioning the dam (DAM) to surround the camera hole CH, the flow of the organic film, which is part of the sealing layer, can be effectively controlled at the boundary around the camera hole CH.

[0083] The discontinuation region STA may be located in the first non-display region NDA1. The discontinuation region STA may also mean a region where multiple discontinuation regions are located. The discontinuation region is a structure for blocking external moisture from penetrating from the camera hole CH to the display region DA, and may refer to a structure for blocking the moisture penetration path by cutting the cathode electrode formed by the organic layer of the light-emitting element and / or by full-surface deposition on the substrate.

[0084] The discontinuity region STA may include an inner discontinuity region ISTA and an outer discontinuity region OSTA. The inner discontinuity region ISTA may be a discontinuity region located inside the dam DAM with respect to the display region DA. The inner discontinuity region ISTA may be a region where multiple discontinuities are located inside the dam DAM with respect to the display region DA. The outer discontinuity region OSTA may be a discontinuity region located outside the dam DAM with respect to the display region DA. The outer discontinuity region OSTA may be a region where multiple discontinuities are located outside the dam DAM with respect to the display region DA.

[0085] A moisture-proof structure may be located in the isolation region STA. By positioning the moisture-proof structure in the isolation region STA, it is possible to effectively prevent external moisture from penetrating the light-emitting element located in the display region DA through the camera hole CH. The moisture-proof structure may be located in the outer isolation region OSTA and / or the inner isolation region ISTA. In this disclosure, the moisture-proof structure located in the outer isolation region OSTA may be referred to as the outer moisture-proof structure, and the moisture-proof structure located in the inner isolation region ISTA may be referred to as the inner moisture-proof structure.

[0086] The variable bezel region VBA may refer to the region within the first non-display region NDA1 that surrounds the inner discontinuity region ISTA and is adjacent to the display region DA. Signal lines for transmitting signals to multiple light-emitting elements located in the display region DA may be located in the variable bezel region VBA.

[0087] Figure 5 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, Figure 5 is a cross-sectional view of portion AB of Figure 4. In describing the embodiment shown in Figure 5 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 4 above.

[0088] Referring to Figure 5, the display device can include a transistor forming part, a light emitting element forming part, and an encapsulation part when viewed from a vertical structure.

[0089] The transistor forming part may include a substrate SUB, a first buffer layer BUF1 on the substrate SUB, and various transistors, storage capacitors, and various electrodes and signal wiring formed on the first buffer layer BUF1.

[0090] The substrate SUB may contain an insulating material. For example, the substrate SUB may contain glass or plastic. The substrate SUB may have a single-layer structure or a multi-layer structure. For example, the substrate SUB may have a multi-layer structure. The substrate SUB may include a first substrate SUB1 and a second substrate SUB2, and may include an interlayer film IPD between the first substrate SUB1 and the second substrate SUB2. The first substrate SUB1 and the second substrate SUB2 may contain the same material. For example, the first substrate SUB1 and the second substrate SUB2 may be polyimide (PI) substrates. The interlayer film IPD may be silicon nitride (SiN x ) or silicon oxide (SiO x The interlayer film IPD may be a single-layer or multi-layer inorganic film. By placing the interlayer film IPD between the first substrate SUB1 and the second substrate SUB2, moisture components can be prevented from passing through the lower first substrate SUB1 and penetrating into the transistors, thereby improving the reliability of the display device.

[0091] The first buffer layer BUF1 may be a single layer or a multilayer layer. If the first buffer layer BUF1 is a multilayer layer, it may include a multi-buffer layer MBUF and an active buffer layer ABUF.

[0092] Various transistors, storage capacitors, and various electrodes and signal wiring may be formed on the first buffer layer BUF1. For example, transistors formed on the first buffer layer BUF1 may be made of the same material and located on the same layer. Alternatively, transistors formed on the first buffer layer BUF1 may be made of different materials and located on different layers.

[0093] A first active layer ACT1 may be located on the first buffer layer. The first active layer ACT1 is a layer that constitutes a transistor and may include a channel region that overlaps with the first gate electrode GAT1, a first source connection region located on one side of the channel region, and a first drain connection region located on the other side. The first active layer ACT1 may refer to the active layer of a transistor, or it may refer to a semiconductor layer formed from the same material. Therefore, the first active layer ACT1 can constitute a transistor, or other circuit elements and signal lines.

[0094] A first gate insulating film GI1 may be located on the first active layer ACT1. A first gate electrode GAT1 may be located on the first gate insulating film GI1. The first gate electrode GAT1 may refer to the gate electrode of a transistor, or to a metal layer formed from the same material. Thus, the first gate electrode GAT1 can constitute a transistor, or other circuit elements and signal lines. The first gate electrode GAT1 may contain conductive material. For example, the first gate electrode GAT1 may consist of a single layer or multiple layers of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the first gate electrode GAT1 may consist of a Mo / Ti bilayer.

[0095] A first interlayer insulating film ILD1 may be located on the first gate electrode GAT1. The first interlayer insulating layer ILD1 is silicon nitride (SiNx ) or silicon oxide (SiO x This may consist of a single layer or multiple layers thereof, but is not limited to this.

[0096] The second buffer layer BUF2 can be placed on the first interlayer insulating film ILD1. The second buffer layer BUF2 is silicon nitride (SiN x ) or silicon oxide (SiO x This may consist of a single layer or multiple layers thereof, but is not limited to this.

[0097] A second active layer ACT2 may be located on the second buffer layer BUF2. The second active layer ACT2 may refer to the active layer of a transistor, or it may refer to a semiconductor layer formed from the same material. Therefore, the second active layer ACT2 can constitute a transistor, or other circuit elements and signal lines.

[0098] A second gate insulating film GI2 may be located on the second active layer ACT2. The second gate insulating film GI2 is silicon nitride (SiN x ) or silicon oxide (SiO x This may consist of a single layer or multiple layers thereof, but is not limited to this.

[0099] A second gate electrode GAT2 may be located on the second gate insulating film GI2. The second gate electrode GAT2 may refer to the gate electrode of a transistor, or it may refer to a metal layer formed from the same material. Thus, the second gate electrode GAT2 can constitute a transistor, or other circuit elements and signal lines. The second gate electrode GAT2 may contain a conductive material. For example, the second gate electrode GAT2 may consist of a single layer or multiple layers of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the second gate electrode GAT2 may consist of a Mo / Ti bilayer.

[0100] A second interlayer insulating film ILD2 may be located on the second gate electrode GAT2. A first source-drain electrode SD1 may be located on the second interlayer insulating film ILD2. The first source-drain electrode SD1 may refer to the source-drain electrodes of a transistor, or it may refer to a metal layer formed from the same material. Thus, the first source-drain electrode SD1 can constitute a transistor, or other circuit elements and signal lines. The first source-drain electrode SD1 may contain a conductive material. For example, the first source-drain electrode SD1 may consist of a single layer or multiple layers of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the first source-drain electrode SD1 may consist of a Ti / Al / Ti triple layer.

[0101] A first planarization layer PLN1 may be located on the first source-drain electrode SD1.

[0102] A second source-drain electrode SD2 may be located on the first planarization layer PLN1. The second source-drain electrode SD2 may refer to an electrode for electrically connecting the first source-drain electrode SD1 and the light-emitting element ED, or it may refer to a metal layer formed from the same material. Thus, the second source-drain electrode SD2 can constitute an electrode for electrically connecting the transistor and the light-emitting element, or it can constitute other circuit elements and signal lines. The second source-drain electrode SD2 may contain conductive material. For example, the second source-drain electrode SD2 may consist of a single layer or multiple layers of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the second source-drain electrode SD2 may consist of a Ti / Al / Ti triple layer.

[0103] Referring to Figure 5, the storage capacitor Cst can be formed by a first capacitor electrode CAPE1 and a second capacitor electrode CAPE2. In some cases, the storage capacitor Cst can also be formed by three or more capacitor electrodes, and may be in a configuration in which two or more capacitors are connected in parallel.

[0104] The first capacitor electrode CAPE1 and the second capacitor electrode CAPE2 can each be placed in various metal layers arranged within the display panel 110. For example, the first capacitor electrode CAPE1 may contain the same first gate metal as the first gate electrode GAT1 on the first gate insulating film GI1 and be placed in the first gate metal layer. For example, the second capacitor electrode CAPE2 may contain the same metal as the metal pattern TM on the first interlayer insulating layer ILD1 and be placed in the metal pattern layer.

[0105] Referring to Figure 5, the metal pattern TM may further be included. For example, the metal pattern TM may be placed between the first interlayer insulating layer ILD1 and the second buffer layer BUF2. For example, the metal pattern TM may contain the same metal as the second capacitor electrode CAPE2 on the first interlayer insulating layer ILD1 and be placed within the metal pattern layer. The metal pattern TM may contain conductive material. For example, the metal pattern TM may contain, but is not limited to, a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the metal pattern TM may consist of a single layer of Mo, a single layer of MoTi alloy, or a Mo / Ti double layer. The metal pattern TM may be placed in the display area DA and / or the non-display area NDA. The metal pattern TM can be used as a shielding metal.

[0106] A second planarization layer PLN2 may be located on the second source-drain electrode SD2.

[0107] An anode electrode AE ​​may be located on the second planarization layer PLN2. The anode electrode AE ​​may also be a pixel electrode. The anode electrode AE ​​can constitute a light-emitting element ED. Although not shown in Figure 5, a cathode electrode may be located on the light-emitting layer EL. In such an example, the anode electrode AE ​​may be a pixel electrode, and the cathode electrode may be a common electrode. The common cathode electrode may be deposited over the entire display area DA.

[0108] A bank may be located on the anode electrode AE. The bank may be positioned so as to cover a portion of the anode electrode AE. A portion of the bank corresponding to the light-emitting region EA of a subpixel may be open.

[0109] A portion of the anode electrode AE ​​can be exposed to the opening (open portion) of the bank. The light-emitting layer EL can be located on the side of the bank and in the opening (open portion) of the bank. All or part of the light-emitting layer EL can be located between adjacent banks.

[0110] At the opening of the bank, the light-emitting layer EL can come into contact with the anode electrode AE. A cathode electrode may be placed on the light-emitting layer EL. A light-emitting element ED may be formed by the anode electrode AE, the light-emitting layer EL, and the cathode electrode. The light-emitting layer EL may include an organic film.

[0111] A sealing layer ENCAP may be placed on the aforementioned light-emitting element ED. The sealing layer ENCAP can have a single-layer structure or a multilayer structure. For example, as shown in Figure 5, the sealing layer ENCAP may include a first sealing layer PAS1, a second sealing layer PCL, and a third sealing layer PAS2.

[0112] For example, the first sealing layer PAS1 and the third sealing layer PAS2 may be inorganic films, and the second sealing layer PCL may be an organic film. Among the first sealing layer PAS1, the second sealing layer PCL, and the third sealing layer PAS2, the second sealing layer PCL may be the thickest. Thereby, the second sealing layer PCL can serve as a planarization layer. The first sealing layer PAS1 is also referred to as the first inorganic sealing layer, the second sealing layer PCL is also referred to as the organic sealing layer, and the third sealing layer PAS2 is also referred to as the second inorganic sealing layer.

[0113] The first sealing layer PAS1 is disposed on the cathode electrode and can be disposed most adjacent to the light-emitting element ED. The first sealing layer PAS1 can be formed from an inorganic insulating material capable of low-temperature evaporation. For example, the first sealing layer PAS1 may be silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiON), or aluminum oxide (Al2O3), etc. Since the first sealing layer PAS1 is evaporated in a low-temperature atmosphere, during the evaporation process, the first sealing layer PAS1 can prevent the light-emitting layer EL containing organic substances vulnerable to a high-temperature atmosphere from being damaged.

[0114] The second sealing layer PCL can be formed with an area smaller than that of the first sealing layer PAS1. In this case, the second sealing layer PCL can be formed so as to expose both ends of the first sealing layer PAS1. The second sealing layer PCL serves as a buffer to relieve the stress between layers due to the warp of the display device 100 and can also serve to enhance the planarization performance. For example, the second sealing layer PCL may be an acrylic resin, an epoxy resin, a polyimide, a polyethylene, or a silicon oxycarbon (SiOC), etc., and can be formed from an organic insulating material. For example, the second sealing layer PCL can also be formed via an inkjet method.

[0115] The third sealing layer PAS2 can be formed on the substrate SUB on which the second sealing layer PCL is formed, so as to cover the upper and side surfaces of the second sealing layer PCL and the first sealing layer PAS1, respectively. The third sealing layer PAS2 can minimize or block the penetration of external moisture and oxygen into the first sealing layer PAS1 and the second sealing layer PCL. For example, the third sealing layer PAS2 is made of silicon nitride (SiN x ), silicon oxide (SiO x ), are formed from inorganic insulating materials such as silicon oxide nitride (SiON) or aluminum oxide (Al2O3).

[0116] Referring to Figure 5, the light-emitting element ED can be positioned on a plane so as to overlap with the light-emitting region EA. The light-emitting element ED may include an anode electrode AE, a light-emitting layer EL, and a cathode electrode CE. The light-emitting layer EL may have multiple parts. For example, the light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other. For example, the first part FPEL of the light-emitting layer EL can be positioned on a plane so as to overlap with the light-emitting region EA. This is shown in Figures 6, 7, 10, 11, and 13.

[0117] Furthermore, the cathode electrode CE can have multiple parts. For example, the cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other. Alternatively, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other. For example, the first part FPCE of the cathode electrode CE can be positioned so as to overlap with the light-emitting region EA on a plane. This is shown in Figures 6, 7, 10, 11, and 13.

[0118] Referring to Figure 5, if the touch sensor TS is of a type that is built into the display panel, the touch sensor TS may be placed on the sealing layer ENCAP. The structure of the touch sensor is described in detail below.

[0119] A touch buffer film T-BUF may be placed on the sealing layer ENCAP. A touch sensor TS may be placed on the touch buffer film T-BUF.

[0120] The touch sensor TS may include a touch sensor metal TSM and a bridge metal BRG located in different layers from each other.

[0121] A touch interlayer insulating film (T-ILD) may be placed between the touch sensor metal (TSM) and the bridge metal (BRG).

[0122] For example, the configuration may include a first touch sensor metal TSM, a second touch sensor metal TSM, and a third touch sensor metal TSM, arranged adjacent to each other. When the third touch sensor metal TSM is located between the first and second touch sensor metal TSMs, and the first and second touch sensor metal TSMs must be electrically connected to each other, the first and second touch sensor metal TSMs can be electrically connected to each other via a bridge metal BRG located in a different layer. The bridge metal BRG can be insulated from the third touch sensor metal TSM by a touch interlayer insulating film T-ILD.

[0123] When a touch sensor TS is formed on a display panel, chemicals used in the process (such as developer or etching solution) or moisture from an external source may be generated. By placing the touch sensor TS on a touch buffer film T-BUF, it is possible to prevent chemicals or moisture from penetrating the light-emitting layer EL, which contains organic matter, during the manufacturing process of the touch sensor TS. As a result, the touch buffer film T-BUF can prevent damage to the light-emitting layer EL, which is vulnerable to chemicals or moisture.

[0124] The touch buffer film T-BUF can be formed at a low temperature (e.g., 100°C) or lower to prevent damage to the light-emitting layer EL, which contains organic materials that are vulnerable to high temperatures, and is formed from an organic insulating material having a low dielectric constant of 1 to 3. For example, the touch buffer film T-BUF can be formed from acrylic, epoxy, or siloxane-based materials. Warping of the display device may damage the sealing layer ENCAP, and the touch sensor metal located on the touch buffer film T-BUF may break. Even if the display device 100 warps, the touch buffer film T-BUF, which has planarization properties and is made of an organic insulating material, can prevent damage to the sealing layer ENCAP and / or breakage of the metal TSM,BRG constituting the touch sensor TS.

[0125] Referring to Figure 5, touch lines TL1 and TL2 can be arranged to electrically connect the touch electrode TE and the touchpad. Touch lines TL1 and TL2 can consist of at least one of a sensor metal TSM and a bridge metal BRG.

[0126] If the display panel 110 is of a type that incorporates a touch sensor, the touch lines TL1 and TL2 can extend along the inclined surface of the outer casing of the sealing layer ENCAP and extend beyond the top of the dam DAM to the non-display area NDA.

[0127] The protective layer PAC may be positioned to cover the touch sensor TS. The protective layer PAC may also be an organic insulating film.

[0128] The display device is located on a substrate SUB and may include a plurality of insulating films located beneath a plurality of light-emitting elements ED. In this disclosure, the plurality of insulating films located on the substrate SUB and beneath a plurality of light-emitting elements ED may refer to a first buffer layer BUF1 to a second planarization layer PLN2 and insulating films located between them.

[0129] The display device may include a moisture-proof structure MPS. The moisture-proof structure MPS may be located in the first non-display area NDA1. In the embodiment shown in Figure 5, the moisture-proof structure MPS may be located in the outer discontinuity area OSTA. In this disclosure, the moisture-proof structure MPS located in the outer discontinuity area OSTA may be referred to as the outer moisture-proof structure.

[0130] The moisture-proof structure MPS may include at least one undercut region of a plurality of insulating films. The moisture-proof structure MPS of the display device according to the embodiment shown in Figure 5 may include an undercut region located in an inorganic insulating film that is placed on a substrate SUB and is located beneath a plurality of light-emitting elements ED. The fact that the undercut region is located in an inorganic insulating film means that the undercut region was formed by etching the inorganic insulating film. For example, the inorganic insulating film described above may be one or more of the multi-buffer layer MBUF, active buffer layer ABUF, first gate insulating film GI1, first interlayer insulating film ILD1, second buffer layer BUF2, second gate insulating film GI2, and second interlayer insulating film ILD2. The display device according to the embodiment shown in Figure 5 includes a moisture-proof structure MPS in which the active buffer layer ABUF, first gate insulating film GI1, first interlayer insulating film ILD1, second buffer layer BUF2, second gate insulating film GI2, and second interlayer insulating film ILD2 include an undercut region.

[0131] The first non-display region NDA1 may include a variable bezel region VBA, an inner discontinuity region ISTA, a dam region DAMA, and an outer discontinuity region OSTA. The dam region DAMA may be the region where a dam DAM is located to control the flow of the second sealing layer PCL. Thus, the dam DAM may be located in the first non-display region NDA1. The dam DAM may include one or more insulating films, for example, a second planarization layer PLN2 and a bank BANK located on the second planarization layer PLN2.

[0132] The isolation section ST may be located in the first non-display area NDA1. By positioning the isolation section ST in the first non-display area NDA1, it is possible to prevent external moisture from penetrating the display area DA from the camera hole CH. The isolation section ST may also refer to a structure for blocking the moisture permeability path by isolating the light-emitting layer EL and cathode electrode CE, which are formed by full-surface deposition on the display area DA and the first non-display area NDA1 of the display device. The isolation section ST may also refer to a structure in which the light-emitting layer EL and cathode electrode CE are isolated by a step formed by the second source-drain electrode SD2. For example, the isolation section ST may include the second source-drain electrode SD2 and the light-emitting layer EL, and may additionally include the cathode electrode CE. In such an example, the second source-drain electrode SD2 may be a triple-layer structure including a first layer, a second layer located on the first layer, and a third layer located on the second layer, and the second layer may have a recessed structure between the first and third layers.

[0133] The isolation section ST may include an inner isolation section IST and an outer isolation section OST. The inner isolation section IST may be located between the display area DA and the dam DAM. That is, the inner isolation section IST may refer to an isolation section located in the inner isolation section region ISTA. The outer isolation section OST may be located between the dam DAM and the camera hole CH. That is, the outer isolation section OST may refer to an isolation section located in the outer isolation section region OSTA. By providing isolation sections ST on the inside and outside of the dam DAM, it is possible to more effectively prevent external moisture from penetrating from the camera hole CH to the display area DA.

[0134] The variable bezel region VBA is located in the first non-display region NDA1 and may be located between the display region DA and the inner disconnection region ISTA. The variable bezel region VBA may contain signal lines for transmitting signals to multiple light-emitting elements located in the display region DA. For example, the variable bezel region VBA may contain a first gate electrode GAT1, a second gate electrode GAT2, a first source-drain electrode SD1, and a second source-drain electrode SD2. More specifically, the variable bezel region VBA may contain multiple gate lines.

[0135] Figure 6 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, Figure 6 is a cross-sectional view of portion AB shown in Figure 4. In describing the embodiment shown in Figure 6 below, unless otherwise specified, the same explanations as those given above with reference to Figures 1 to 5 will be provided.

[0136] The display device according to the embodiment shown in Figure 6 differs from the display device according to the embodiment shown in Figure 5, which includes an external moisture-proofing structure, in that it includes an internal moisture-proofing structure. That is, the moisture-proofing structure MPS of the display device according to the embodiment shown in Figure 6 is an internal moisture-proofing structure located in the internal discontinuity region ISTA.

[0137] The display device according to the embodiments of this disclosure may include two or more moisture-proof structures.

[0138] Figure 7 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, Figure 7 is a cross-sectional view of portion AB shown in Figure 4. In describing the embodiment shown in Figure 7 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 6 above.

[0139] The display device according to the embodiment shown in Figure 7 differs from the display device according to the embodiment shown in Figure 5, which does not include an internal moisture-proofing structure but includes an external moisture-proofing structure, in that it includes both an external and an internal moisture-proofing structure. That is, the display device according to the embodiment shown in Figure 6 has one or more moisture-proofing structures MPS, and can include an internal moisture-proofing structure located in the internal discontinuity region ISTA and an external moisture-proofing structure located in the external discontinuity region OSTA.

[0140] In the display device according to the embodiment of this disclosure, the light-emitting layer EL can be positioned extending from the display area DA to the boundary of the camera hole CH. That is, the light-emitting layer EL can be formed by depositing it over the entire area of ​​the display area DA. The light-emitting layer EL may be interrupted by a moisture-proof structure MPS. By interrupting the light-emitting layer EL with the moisture-proof structure MPS, it is possible to prevent external moisture that has penetrated through the camera hole CH from penetrating into the display area DA through the light-emitting layer EL.

[0141] The moisture-proof structure MPS may include an undercut region. The undercut region can be located on the substrate SUB and formed in the inorganic insulating film beneath multiple light-emitting elements ED.

[0142] Referring to Figure 7, the moisture-blocking structure MPS may include a first moisture-blocking structure FMPS and a second moisture-blocking structure SMPS. As shown in the figure, the first moisture-blocking structure FMPS can be positioned on a plane between the dam structure DAM and the camera hole CH. The dam structure DAM can be positioned on a plane between the first moisture-blocking structure FMPS and the second moisture-blocking structure SMPS. In addition, various structures for moisture blocking can be positioned between the first moisture-blocking structure FMPS and the dam structure DAM. Various structures for moisture blocking can also be positioned between the second moisture-blocking structure SMPS and the dam structure DAM.

[0143] As described above, the display device according to the embodiment of this disclosure may include one or more moisture-proof structures located in the first non-display area. The moisture-proof structures that may be included in the embodiment of this disclosure will be described in more detail below.

[0144] Figure 8 is a cross-sectional view of the moisture-proofing structure of the display device 100 according to an embodiment of the present disclosure. In describing the embodiment shown in Figure 8 in the following description, unless otherwise specified, the same explanations are given with reference to Figures 1 to 7 above.

[0145] Referring to Figure 8, the moisture-proof structure can include at least one undercut region UCA of multiple insulating films. In the embodiment shown in Figure 8, the undercut region UCA can be formed in the active buffer layer ABUF or the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted by the undercut region UCA.

[0146] The moisture-proof structure MPS may include a metal layer MTL located on the undercut region UCA. The metal layer MTL may be, for example, a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL.

[0147] A metal layer MTL can be composed of, for example, three layers. If the metal layer MTL is a triple layer, it may include a first layer M1, a second layer M2 located on the first layer M1, and a third layer M3 located on the second layer M2.

[0148] The first layer M1 and the third layer M3 are metal layers of the same material, while the second layer M2 may be a metal layer of a different material from the first layer M1 and the third layer M3. For example, the first layer M1 and the third layer M3 may contain titanium (Ti), and the second layer M2 may contain aluminum (Al). For example, the metal layer MTL may be a multilayer with a Ti / Al / Ti structure. By selecting such materials for the first to third layers M1, the second layer M2 can be made of a material with better conductivity, and the first and third layers M1 and M3 can be made of materials that can protect the second layer M2 during the manufacturing process.

[0149] The second layer M2 may have a recessed shape compared to the first layer M1 and the third layer M3. In other words, the second layer M2 may have a recessed shape compared to the first layer M1 and the third layer M3 due to further etching. Therefore, the first layer M1 and the third layer M3 may have a protruding shape compared to the second layer M2. Also, the first layer M1 may have a protruding shape compared to the third layer M3. Here, recessed or protruding means recessed or protruding in a direction parallel to the substrate SUB, and can mean protruding or recessed with respect to the undercut region UCA. Because the first layer M1, the second layer M2, and the third layer M3 have the aforementioned shapes, the light-emitting layer EL can be effectively interrupted by the moisture-proof structure MPS. In particular, the light-emitting layer EL can be interrupted at least twice by the moisture-proof structure MPS. For example, the light-emitting layer EL can be interrupted in the undercut region UCA and on the side of the metal layer MTL. More specifically, the light-emitting layer EL can be interrupted between the first layer M1 and the second layer M2. Also, the light-emitting layer EL can be interrupted between the second layer M2 and the third layer M3. Furthermore, the light-emitting layer EL can be interrupted between the first layer M1 and the third layer M3.

[0150] The second layer M2 may have a shape in which its interface with the first layer M1 protrudes further than its interface with the third layer M3. Such a shape can be formed by etching the second layer M2 more extensively than the first layer M1 and the third layer M3.

[0151] The undercut region UCA can refer to the region undercut with respect to the metal layer MTL. In particular, it may refer to the undercut region below the first layer M1.

[0152] The moisture-permeable barrier structure MPS shown in Figure 8 can be formed as follows.

[0153] First, multiple insulating films can be formed on the substrate SUB. The multiple insulating films may be one or more of the following: a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. Metal layers MTL may be patterned and formed on the multiple insulating films. The metal layers MTL can be arranged in the order of a first layer M1, a second layer M2, and a third layer M3.

[0154] A second planarization layer PLN2 may be formed so as to cover a portion of the metal layer MTL. In this case, during the development process of the second planarization layer PLN2, a portion of the exposed second layer M2 of the metal layer MTL may be etched.

[0155] After the anode electrode material is deposited on the second planarization layer PLN2, a wet etching process can be carried out to form the anode electrode. In this case, during the wet etching process, the exposed second layer M2 of the metal layer MTL may be further etched.

[0156] A dry etching process may be carried out to pattern some of the insulating films among multiple insulating films. During the dry etching process, some insulating films located below the metal layer MTL may be etched to the inside of the metal layer MTL, forming an undercut region. For example, the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the active buffer layer ABUF, all located below the metal layer MTL, may be etched to the inside of the metal layer MTL, forming an undercut region.

[0157] A bank may be formed so as to cover a portion of the anode electrode AE. In this case, during the development process of the bank, the exposed second layer M2 of the metal layer MTL may be further etched. Through dry etching, wet etching, and development processes, etc., the metal layer MTL may form a structure in which the second layer M2 is recessed between the first layer M1 and the third layer M3, and an undercut region UCA may be formed at the bottom of the metal layer MTL.

[0158] The light-emitting layer EL and the cathode electrode CE may be formed sequentially. In this case, the light-emitting layer EL can be disconnected from the side of the metal layer MTL by the undercut region UCA.

[0159] Referring to Figure 8, the light-emitting layer EL can have multiple parts. As described above, the light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The light-emitting layer EL may further include a fourth part FRPEL. As shown in the figure, the first part FPEL, the second part SPEL, the third part TPEL, and the fourth part FRPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, the third part TPEL, and the fourth part FRPEL of the light-emitting layer EL are separated from each other.

[0160] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in a first direction (e.g., lateral direction) than a portion of the insulating film in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a portion of the insulating film such as the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 in order to form an undercut region UCA.

[0161] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface of the insulating film including the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0162] The fourth portion of the light-emitting layer EL, FRPEL, can be located on the metal layer MTL. The third layer M3 of the metal layer MTL can extend in the first direction (e.g., the lateral direction) beyond a portion of the second layer M2 of the metal layer MTL. For example, the fourth portion of the light-emitting layer EL, FRPEL, can be located on an extended portion of the third layer M3 of the metal layer MTL. Both the fourth portion FRPEL and the second portion SPEL of the light-emitting layer EL can be said to be located on the first layer M1 of the metal layer MTL, but the fourth portion FRPEL is located directly on the third layer M3 of the metal layer MTL, and the second portion SPEL is located directly on the first layer M1 of the metal layer MTL.

[0163] Furthermore, the cathode electrode CE may have multiple parts. As described above, the cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE may further include a fourth part FRPCE. As shown in the figure, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be separated from each other. Alternatively, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be said to be separate from each other.

[0164] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on the second portion SPEL of the light-emitting layer EL.

[0165] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0166] The fourth portion FRPCE of the cathode electrode CE can be located on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE can be located on the fourth portion FRPEL of the light-emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light-emitting layer EL may be separated from the second layer M2 of the metal layer MTL. Both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can be said to be located on the first layer M1 of the metal layer MTL. Furthermore, the fourth portion FRPCE of the cathode electrode CE can be in direct contact with the fourth portion FRPEL of the light-emitting layer EL, and the second portion SPCE of the cathode electrode CE can be in direct contact with the second portion SPEL of the light-emitting layer EL. Such a configuration is also shown in Figure 9, and its explanation is omitted.

[0167] Figure 9 is a cross-sectional view of the moisture-proofing structure of the display device 100 according to an embodiment of the present disclosure. In describing the embodiment shown in Figure 9 in the following description, unless otherwise specified, the same information is provided for in reference to Figures 1 to 8 above.

[0168] Referring to Figure 9, the moisture-proof structure MPS can include at least one undercut region UCA of multiple insulating films. In the embodiment shown in Figure 9, the undercut region UCA can be formed in the second buffer layer BUF2 or the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted by the undercut region UCA.

[0169] The moisture-proof structure MPS shown in Figure 9 may differ from the moisture-proof structure MPS shown in Figure 8 in terms of the shape of the undercut region UCA. The moisture-proof structure MPS shown in Figure 9 may include a stepped portion STP in the undercut region UCA.

[0170] The stepped portion STP can refer to a step formed in the undercut region UCA where some of the insulating film is not etched to the lower inside of the metal layer MTL. For example, if the second interlayer insulating film ILD2 and the second gate insulating film GI2 are etched to the lower inside of the metal layer MTL, but the second buffer layer BUF2, the first interlayer insulating film ILD1 and the first gate insulating film GI1 are not etched to the lower inside of the metal layer MTL, the stepped portion STP can consist of the second buffer layer BUF2, the first interlayer insulating film ILD1 and the first gate insulating film GI1.

[0171] In some embodiments, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the sides of the second gate insulating film GI2, the second buffer layer BUF2, and the second interlayer insulating film ILD2, and can cover the upper surface of the second buffer layer BUF2. Furthermore, the third portion TPEL of the light-emitting layer EL can cover the sides of the second buffer layer BUF2, the first gate insulating film GI1, and the first interlayer insulating film ILD1. In addition, the third portion TPEL of the light-emitting layer EL can cover the sides of the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0172] The moisture-permeable barrier structure MPS shown in Figure 9 can be formed as follows.

[0173] First, multiple insulating films may be formed on the substrate SUB. The multiple insulating films may be one or more of the following: a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. Some of the multiple insulating films may be etched adjacent to the region where the moisture-proof structure MPS will be formed later. For example, the second gate insulating film GI2 and the second interlayer insulating film ILD2 may be etched to correspond to the region where the metal layer MTL will be patterned and formed later, exposing the second buffer layer BUF2. In this case, the exposed second buffer layer BUF2 may also be partially etched. Specifically, by positioning a mask with openings formed on the multiple insulating films and proceeding with a dry etching process, the second gate insulating film GI2 and the second interlayer insulating film ILD2 are etched, and the second buffer layer BUF2 can be exposed. Such an etching process can be called a first dry etching process. The openings formed in the mask can be positioned to correspond to the areas where the metal layer MTL will be patterned later.

[0174] Multiple insulating films may be patterned and formed on top of each other. The metal layers MTL can be arranged in the order of a first layer M1, a second layer M2, and a third layer M3.

[0175] A second planarization layer PLN2 may be formed so as to cover a portion of the metal layer MTL. In this case, during the development process of the second planarization layer PLN2, a portion of the exposed second layer M2 of the metal layer MTL may be etched.

[0176] After the anode electrode material is deposited on the second planarization layer PLN2, a wet etching process may be carried out to form the anode electrode. In this case, during the wet etching process, the exposed second layer M2 of the metal layer MTL may be further etched.

[0177] A dry etching process may be carried out to pattern some of the insulating films among multiple insulating films. During the dry etching process, some of the insulating films located below the metal layer MTL may be etched inward to the bottom of the metal layer MTL, forming an undercut region, and some of the exposed insulating films may be etched. Such an etching process can be called a secondary dry etching process. The isotropic conditions of the dry etching process can be used during the secondary dry etching process. For example, if the secondary dry etching process is performed using the metal layer MTL as a mask, the second interlayer insulating film ILD2 and the second gate insulating film GI2 located below the metal layer MTL are etched inward to the bottom of the metal layer MTL, forming an undercut region. At the same time, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 are etched in the direction of the substrate SUB to form a stepped shape. In this case, the active buffer layer ABUF may also be partially etched in the direction of the substrate SUB.

[0178] In other words, if the process of etching multiple insulating films arranged in the region where the moisture-permeable barrier structure MPS is located is divided into a first dry etching process and a second dry etching process, an undercut region and a stepped shape may be formed simultaneously in the lower part of the metal layer MTL.

[0179] A bank may be formed so as to cover a portion of the anode electrode AE. In this case, during the development process of the bank, the exposed second layer M2 of the metal layer MTL may be further etched. Through dry etching, wet etching, and development processes, the metal layer MTL may form a structure in which the second layer M2 is recessed between the first layer M1 and the third layer M3, and an undercut region UCA and a stepped portion STP may be formed at the bottom of the metal layer MTL.

[0180] The light-emitting layer EL and the cathode electrode CE may be formed sequentially. In this case, the light-emitting layer EL can be disconnected from the side of the metal layer MTL by the undercut region UCA.

[0181] Figure 10 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, Figure 10 is a cross-sectional view of portion AB shown in Figure 4.

[0182] In the following explanation, when describing the embodiment shown in Figure 10, unless otherwise specified, the explanation is the same as that given in Figures 1 to 9 above.

[0183] Unlike the display devices shown in Figures 5 to 7, the display device according to the embodiment shown in Figure 10 may include an undercut region of an organic insulating film in its moisture-permeable structure. More specifically, the moisture-permeable structure of the display device according to the embodiment shown in Figure 10 may include an inner moisture-permeable structure and may include an undercut region of an organic insulating film.

[0184] The moisture-proof structure MPS may include an undercut region. The undercut region can be located on the substrate SUB and formed in the organic insulating film beneath multiple light-emitting elements ED.

[0185] Figure 11 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, Figure 11 is a cross-sectional view of portion AB shown in Figure 4.

[0186] In describing the embodiment shown in Figure 11 in the following explanation, unless otherwise specified, the explanation is the same as that given in Figures 1 to 10 above.

[0187] Unlike the display device shown in Figure 10, which includes an inner moisture-proofing structure but does not include an outer moisture-proofing structure, the display device shown in Figure 11 may include an outer moisture-proofing structure but not an inner moisture-proofing structure. Furthermore, the display device shown in Figure 11, like the display device shown in Figure 10, may include an undercut region of the organic insulating film in its moisture-proofing structure.

[0188] The moisture-proof structure MPS may include an undercut region. The undercut region can be located on the substrate SUB and formed in the organic insulating film beneath multiple light-emitting elements ED.

[0189] The embodiments shown in Figures 10 and 11 provide a display device equipped with a moisture-proof structure that includes an undercut region of the so-called organic insulating film. Furthermore, the embodiment shown in Figure 10 includes an inner moisture-proof structure, and the embodiment shown in Figure 11 includes an outer moisture-proof structure. However, the embodiments of this disclosure are not limited to such display devices, and embodiments that include an inner moisture-proof structure and / or an outer moisture-proof structure, in which the moisture-proof structure includes an undercut region of the organic insulating film, also fall under the definition of embodiments of this disclosure.

[0190] Figure 12 is a cross-sectional view of the moisture-proofing structure of the display device 100 shown in Figures 10 and 11. In describing the embodiment shown in Figure 12 in the following description, unless otherwise specified, the explanation is the same as that given above with reference to Figures 1 to 11.

[0191] The moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA can be formed on an organic insulating film located beneath a plurality of light-emitting elements on a substrate. Formation of the undercut region UCA on the organic insulating film means that at least one or more organic insulating films are etched to form the undercut region UCA. The organic insulating film on which the undercut region UCA is formed may be, for example, one or more of the first planarization layer PLN1 and the second planarization layer. Figure 12 shows an embodiment in which the moisture-proof structure MPS includes the first planarization layer PLN1 and the undercut region UCA is formed on the first planarization layer PLN1, but the embodiments of this disclosure are not limited to such embodiments. For example, embodiments of this disclosure may include embodiments in which the moisture-proof structure includes one or more of the first planarization layer PLN1 and the second planarization layer, and the undercut region is formed on one or more of the first planarization layer PLN1 and the second planarization layer.

[0192] The moisture-proof structure MPS may include a metal layer MTL located on the undercut region UCA. The metal layer MTL may be, for example, a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL.

[0193] A metal layer MTL can be composed of, for example, three layers. If the metal layer MTL is a triple layer, it may include a first layer M1, a second layer M2 located on the first layer M1, and a third layer M3 located on the second layer M2.

[0194] The second layer M2 may have a shape that is recessed compared to the first layer M1 and the third layer M3. In other words, the second layer M2 may have a shape that is recessed compared to the first layer M1 and the third layer M3 due to further etching. Therefore, the first layer M1 and the third layer M3 may have a shape that protrudes compared to the second layer M2. Here, recessed or protruding means recessed or protruding in a direction parallel to the substrate SUB, and can mean protruding or recessed with respect to the undercut region UCA. With the first layer M1, the second layer M2 and the third layer M3 having the aforementioned shapes, the light-emitting layer EL can be effectively interrupted by the moisture-proof structure MPS. In particular, the light-emitting layer EL can be interrupted at least twice by the moisture-proof structure MPS. For example, the light-emitting layer EL can be interrupted at the undercut region UCA and at the side of the metal layer MTL. More specifically, the light-emitting layer EL can be interrupted between the first layer M1 and the second layer M2.

[0195] The second layer M2 may have a shape in which its interface with the first layer M1 protrudes further than its interface with the third layer M3. Such a shape can be formed by etching the second layer M2 more extensively than the first layer M1 and the third layer M3.

[0196] The undercut region UCA can refer to the region undercut with respect to the metal layer MTL. In particular, it may refer to the undercut region below the first layer M1.

[0197] Referring to Figure 12, the light-emitting layer EL can have multiple parts. The light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL may be positioned on a plane so as to overlap with the light-emitting region EA. As shown in the figure, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other.

[0198] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in the first direction (e.g., the lateral direction) than a portion of the insulating film, such as the first planarization layer PLN1, in order to form an undercut region UCA.

[0199] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can cover various surfaces (e.g., sides and top) of an insulating film such as the first planarization layer PLN1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0200] Furthermore, the cathode electrode CE may have multiple parts. The cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The first part FPCE of the cathode electrode CE may be positioned so as to overlap with the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other. Alternatively, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other.

[0201] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on the second portion SPEL of the light-emitting layer EL and on the third layer M3 of the metal layer MTL. As shown in Figure 12, the second portion SPCE of the cathode electrode CE does not have to be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0202] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0203] Figure 13 is a cross-sectional view of the display device 100 according to an embodiment of the present disclosure. More specifically, Figure 13 is a cross-sectional view of portion AB shown in Figure 4.

[0204] In the following description, when explaining the embodiment shown in Figure 13, unless otherwise specified, the information is the same as that provided for the display device described above with reference to Figures 1 to 12.

[0205] The display device according to the embodiment shown in Figure 13 differs from the display devices shown in Figures 5 to 7 in that no discontinuities are located in the outer discontinuity region OSTA and the inner discontinuity region ISTA, and all of them are occupied by moisture-proof structures MPS. Furthermore, the structure of the moisture-proof structures MPS also differs from the display devices shown in Figures 5 to 7 in some respects. Although the display device according to the embodiment shown in Figure 10 shows an embodiment in which no discontinuities are located in the outer discontinuity region OSTA and the inner discontinuity region ISTA, embodiments that include one or more moisture-proof structures MPS shown in Figure 10 in the first non-display region NDA1, while also including discontinuities ST as shown in Figures 5 to 7, can also be included in the embodiments of this disclosure.

[0206] Figure 14 is a cross-sectional view of the moisture-proof structure MPS shown in Figure 13. In the following explanation, when describing the moisture-proof structure MPS shown in Figure 12, unless otherwise specified, the explanation is the same as the explanation of the moisture-proof structure described above with reference to Figures 1 to 13.

[0207] Referring to Figure 14, the moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be located on a substrate and situated on an organic insulating film beneath a plurality of light-emitting elements. The location of the undercut region UCA on the organic insulating film means that at least one or more organic insulating films are etched to form the undercut region UCA. The organic insulating film on which the undercut region UCA is formed may be, for example, one or more of the first planarization layer PLN1 and the second planarization layer. Figure 14 shows an embodiment in which the moisture-proof structure MPS includes a first planarization layer PLN1 and the undercut region UCA is formed on the first planarization layer PLN1; however, embodiments of this disclosure are not limited to such embodiments. For example, embodiments of this disclosure may include embodiments in which the moisture-proof structure includes one or more of the first planarization layer PLN1 and the second planarization layer, and the undercut region is formed on one or more of the first planarization layer PLN1 and the second planarization layer.

[0208] The moisture-proof structure MPS may include at least one recess CONC of a plurality of insulating films. For example, the recess CONC may be located in an inorganic insulating film that is positioned on a substrate SUB and beneath a plurality of light-emitting elements. The position of the recess CONC in an inorganic insulating film means that at least one or more inorganic insulating films are etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film located on a substrate SUB and beneath the light-emitting elements. For example, the inorganic insulating film may be one or more of the first buffer layer BUF1 and the second interlayer insulating film ILD2, and the insulating film located between the two layers. Figure 14 shows an embodiment in which the second gate insulating film GI2 or the second interlayer insulating film ILD2 includes a recess CONC, but the embodiments of this disclosure are not limited to such embodiments.

[0209] The undercut region UCA of the organic insulating film can be located within the recess CONC. The undercut region UCA of the organic insulating film can expose a portion of the inorganic insulating film. For example, the undercut region UCA of the organic insulating film can expose the second buffer layer BUF2, and the light-emitting layer EL can be located on the exposed second buffer layer BUF2.

[0210] The moisture-proof structure MPS may include a metal layer MTL located on the undercut region UCA. The metal layer MTL may be, for example, a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL.

[0211] A metal layer MTL can be composed of, for example, three layers. If the metal layer MTL is a triple layer, it may include a first layer M1, a second layer M2 located on the first layer M1, and a third layer M3 located on the second layer M2.

[0212] The second layer M2 may have a shape that is recessed compared to the first layer M1 and the third layer M3. In other words, the second layer M2 may have a shape that is recessed compared to the first layer M1 and the third layer M3 due to further etching. Therefore, the first layer M1 and the third layer M3 may have a shape that protrudes compared to the second layer M2. Here, recessed or protruding means recessed or protruding in a direction parallel to the substrate SUB, and can mean protruding or recessed with respect to the undercut region UCA. With the first layer M1, the second layer M2 and the third layer M3 having the aforementioned shapes, the light-emitting layer EL can be effectively interrupted by the moisture-proof structure MPS. In particular, the light-emitting layer EL can be interrupted at least twice by the moisture-proof structure MPS. For example, the light-emitting layer EL can be interrupted at the undercut region UCA and at the side of the metal layer MTL. More specifically, the light-emitting layer EL can be interrupted between the first layer M1 and the second layer M2.

[0213] The second layer M2 may have a shape in which its interface with the first layer M1 protrudes further than its interface with the third layer M3. Such a shape can be formed by etching the second layer M2 more extensively than the first layer M1 and the third layer M3.

[0214] The moisture-permeable barrier structure MPS shown in Figure 14 can be formed as follows.

[0215] First, multiple insulating films may be formed on the substrate SUB. The multiple insulating films may be one or more of the following: a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. A dry etching process may be carried out to form recesses CONC in the multiple insulating films. For example, the recesses CONC may be formed by etching the second interlayer insulating film ILD2 and the second gate insulating film GI2. The recesses CONC can be formed by additional etching of the insulating film formed below the second gate insulating film GI2.

[0216] A planarization layer may be formed on the recess CONC and the second interlayer insulating film ILD2. The planarization layer may be an organic insulating film. The planarization layer can be exposed using a halftone mask and developed to fill the recess CONC with the planarization layer, which is an organic insulating film. The planarization layer may be a first planarization layer PLN1 or a second planarization layer. The halftone mask may include full-tone regions and halftone regions. For example, in forming the moisture-proof structure MPS shown in Figure 14, the planarization layer may be a first planarization layer PLN1. The halftone mask may also include halftone regions formed in the region corresponding to the recess CONC.

[0217] A metal layer MTL may be patterned and formed on the first planarization layer PLN1 and a plurality of insulating films. The metal layer MTL can be arranged in the order of a first layer M1, a second layer M2, and a third layer M3. A dry etching process may be carried out on the metal layer MTL to partially etch the exposed second layer M2 of the metal layer MTL.

[0218] A second planarization layer and a bank may be formed on multiple insulating films, respectively. The ashing process may be carried out so that the second planarization layer is formed, and the developing process may be carried out so that the bank is formed.

[0219] Through the ashing and developing processes, a portion of the first planarization layer PLN1 formed in the recess CONC may be etched, creating an undercut region. For example, the first planarization layer PLN1 may be etched so that an undercut region is formed on the lower inner side of the metal layer MTL, exposing the second buffer layer BUF2.

[0220] Through processes such as dry etching, ashing, and development, the metal layer MTL may take on a structure in which the second layer M2 is recessed between the first layer M1 and the third layer M3, and an undercut region UCA may be formed at the bottom of the metal layer MTL within the recess CONC.

[0221] The light-emitting layer EL and the cathode electrode CE may be formed sequentially. In this case, the light-emitting layer EL can be disconnected from the side of the metal layer MTL by the undercut region UCA.

[0222] A first sealing layer PAS1 and a second sealing layer PAS2 may be formed on the light-emitting layer EL and the cathode electrode CE.

[0223] Referring to Figure 14, the light-emitting layer EL can have multiple parts. The light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL may be positioned on a plane so as to overlap with the light-emitting region EA. As shown in the figure, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other.

[0224] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in the first direction (e.g., the lateral direction) than a portion of the insulating film such as the second interlayer insulating film ILD2 and the second gate insulating film GI2 in order to form an undercut region UCA.

[0225] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, yet on a plane, the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0226] Furthermore, the cathode electrode CE may have multiple parts. The cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The first part FPCE of the cathode electrode CE may be positioned so as to overlap with the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other. Alternatively, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other.

[0227] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on a portion of the light-emitting layer EL that is separated from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE can also be located on the third layer M3 of the metal layer MTL. As shown in Figure 14, the second portion SPCE of the cathode electrode CE does not have to be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0228] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0229] Figure 15 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 15 is an exemplary cross-sectional view of portion AB of Figure 4. In describing the embodiment shown in Figure 15 in the following description, unless otherwise specified, the same applies as described above with reference to Figures 1 to 14.

[0230] Referring to Figure 15, the display device 100 may include a moisture-proof structure MPS. The moisture-proof structure MPS can be placed in the outer isolation region OSTA. For example, the moisture-proof structure MPS can be placed between the camera hole CH and the dam structure DAM. The moisture-proof structure MPS shown in Figure 15 may also be an outer moisture-proof structure.

[0231] The moisture-proof structure MPS may include at least one undercut region UCA among a plurality of insulating films. The moisture-proof structure MPS may include undercut regions located in inorganic insulating films below a plurality of light-emitting elements EDs. The display device 100 shown in Figure 15 may have the same configuration as the display device 100 shown in Figure 5, except that the moisture-proof structure MPS has an auxiliary metal layer (AML) placed between the inorganic insulating films where the undercut region UCA is located.

[0232] Referring to Figure 15, the moisture-proof structure MPS may include an auxiliary metal layer AML in or below the undercut region UCA. The auxiliary metal layer AML can serve as an etching prevention layer ESL in the process of etching the metal layer when forming the moisture-proof structure MPS. In this disclosure, the auxiliary metal layer AML and the etching prevention layer ESL may be used interchangeably.

[0233] The auxiliary metal layer AML may contain metallic materials. For example, the auxiliary metal layer AML may contain, but is not limited to, a single or multiple layer of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. The auxiliary metal layer AML may contain the same material as the first gate electrode GAT1, the second gate electrode GAT2, or the metal pattern TM. For example, the auxiliary metal layer AML may consist of a Mo / Ti bilayer or a single layer of Mo.

[0234] Figure 16 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 16 is an exemplary cross-sectional view of portion AB of Figure 4. In describing the embodiment shown in Figure 16 in the following description, unless otherwise specified, the same applies as described above with reference to Figures 1 to 15.

[0235] Referring to Figure 16, the display device 100 may include a moisture-proof structure MPS. The moisture-proof structure MPS can be placed in the inner isolation region ISTA. For example, the moisture-proof structure MPS can be placed between the display region DA and the dam structure DAM. The moisture-proof structure MPS shown in Figure 16 may be an inner moisture-proof structure.

[0236] The display device 100 shown in Figure 16 may have the same configuration as the display device 100 shown in Figure 6, except that the auxiliary metal layer AML is placed between the inorganic insulating film in which the moisture-permeable structure MPS is located in the undercut region UCA.

[0237] Figure 17 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 17 is an exemplary cross-sectional view of portion AB of Figure 4. In describing the embodiment shown in Figure 17 in the following description, unless otherwise specified, the same applies as described above with reference to Figures 1 to 16.

[0238] Referring to Figure 17, the display device 100 may include two or more moisture-proof structures MPS. The moisture-proof structures MPS can be located in the outer isolation region OSTA and the inner isolation region ISTA. For example, the moisture-proof structures MPS can be located between the display region DA and the dam structure DAM, while being located between the camera hole CH and the dam structure on a plane. The moisture-proof structures MPS shown in Figure 17 may also consist of an outer moisture-proof structure and an inner moisture-proof structure. The outer moisture-proof structure may also be called the first moisture-proof structure FMPS, and the inner moisture-proof structure may also be called the second moisture-proof structure SMPS.

[0239] Referring to Figure 17, the first moisture-proof structure FMPS can be positioned on a plane between the camera hole CH and the dam structure DAM. The dam structure DAM can be positioned between the first moisture-proof structure FMPS and the second moisture-proof structure SMPS. The second moisture-proof structure SMPS can be positioned on a plane between the display area DA and the dam structure DAM.

[0240] The display device 100 shown in Figure 17 may have the same configuration as the display device 100 shown in Figure 7, except that the auxiliary metal layer AML is placed between the inorganic insulating film in which the moisture-permeable structure MPS is located in the undercut region UCA.

[0241] Figure 18 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 18 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 17 above.

[0242] Referring to Figure 18, the moisture-proof structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in Figure 18, the undercut region UCA can be formed between the first buffer layer BUF1 and the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted by the undercut region UCA. The plurality of insulating films shown in Figure 18 may have the same configuration as the plurality of insulating films shown in Figure 8, so a repeated explanation is omitted.

[0243] The moisture-proof structure MPS may include a metal layer MTL located on the undercut region UCA. The metal layer MTL may have the same structure as, for example, the second source-drain electrode. The light-emitting layer EL can be disconnected on the side of the metal layer MTL. The metal layer MTL shown in Figure 18 may have the same configuration as the metal layer MTL shown in Figure 8, so a repeated explanation is omitted.

[0244] The moisture-proof structure MPS may include an etching-preventing layer ESL located below or in the undercut region UCA. The etching-preventing layer ESL may also be called an auxiliary metal layer AML. Referring to Figure 18, the etching-preventing layer ESL can be positioned between multiple insulating films located below the metal layer MTL. For example, the etching-preventing layer ESL can be positioned between a second gate insulating film GI2 and a second interlayer insulating film ILD2 located below the metal layer MTL. The etching-preventing layer ESL may extend further in the first direction (e.g., the lateral direction) than the portion of the insulating film forming the undercut region UCA. For example, the etching-preventing layer ESL may extend further on the second gate insulating film GI2 than a portion of the insulating film such as the second interlayer insulating film ILD2.

[0245] The etching prevention layer (ESL) may contain metallic materials. For example, the etching prevention layer (ESL) may contain, but is not limited to, a single or multiple layer of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the etching prevention layer (ESL) may contain the same material as the second gate electrode (GAT2). For example, the etching prevention layer (ESL) may consist of a Mo / Ti bilayer or a Mo single layer.

[0246] The etching prevention layer (ESL) can prevent over-etching of some of the insulating films located at the bottom during etching processes that involve patterning metallic materials such as the anode electrode (AE) or metal layer (MTL) or multiple insulating films in the process of forming the moisture-proof structure (MPS). For example, in the embodiment shown in Figure 18, an undercut region (UCA) may be formed in which a portion of the second interlayer insulating film (ILD2) placed on the etching prevention layer (ESL) is etched, but the etching prevention layer (ESL) itself is not etched.

[0247] Referring to Figure 18, the light-emitting layer EL can have multiple parts. As described above, the light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The light-emitting layer EL may further include a fourth part FRPEL. As shown in the figure, the first part FPEL, the second part SPEL, the third part TPEL, and the fourth part FRPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, the third part TPEL, and the fourth part FRPEL of the light-emitting layer EL are separated from each other.

[0248] Here, the second portion of the light-emitting layer EL, SPEL, can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in the first direction (e.g., the lateral direction) than a portion of the insulating film in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a portion of the insulating film, such as the second interlayer insulating film ILD2, in order to form an undercut region UCA.

[0249] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the upper surface of the etching prevention layer ESL while covering the side surface SSX of the insulating film including the second interlayer insulating film ILD2. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other in a planar view. For example, the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other in a planar view.

[0250] The fourth portion of the light-emitting layer EL, FRPEL, can be located on the metal layer MTL. The third layer M3 of the metal layer MTL can extend further in the first direction (e.g., the lateral direction) than a portion of the second layer M2 of the metal layer MTL. For example, the fourth portion of the light-emitting layer EL, FRPEL, can be located on an extended portion of the third layer M3 of the metal layer MTL. It can be said that both the fourth portion FRPEL and the second portion SPEL of the light-emitting layer EL are located on the first layer M1 of the metal layer MTL, but the fourth portion FRPEL is located directly on the third layer M3 of the metal layer MTL, and the second portion SPEL is located directly on the first layer M1 of the metal layer MTL.

[0251] Furthermore, the cathode electrode CE may have multiple parts. As described above, the cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE may further include a fourth part FRPCE. As shown in the figure, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be separated from each other. Alternatively, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be said to be separate from each other.

[0252] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on the second portion SPEL of the light-emitting layer EL.

[0253] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can be separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other in a planar view. For example, in a planar view, the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other.

[0254] The fourth portion of the cathode electrode CE, FRPCE, can be located on the metal layer MTL. For example, the fourth portion of the cathode electrode CE, FRPCE, can be located on the fourth portion of the light-emitting layer EL, FRPEL. Both the fourth portion of the cathode electrode CE, FRPCE, and the fourth portion of the light-emitting layer EL, FRPEL, may be separated from the second layer M2 of the metal layer MTL. Both the fourth portion of the cathode electrode CE, FRPCE, and the second portion, SPCE, can be located on the first layer M1 of the metal layer MTL. Furthermore, the fourth portion of the cathode electrode CE, FRPCE, can be in direct contact with the fourth portion FRPEL of the light-emitting layer EL, and the second portion, SPCE, can be in direct contact with the second portion SPEL of the light-emitting layer EL. Such configurations are also shown in Figures 19 to 23, and repeated explanations of the same configurations will be omitted.

[0255] Figure 19 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In the following description, when explaining the embodiment shown in Figure 18, unless otherwise specified, the explanation is the same as that given above with reference to Figures 1 to 18.

[0256] Referring to Figure 19, the moisture-proof structure MPS can include multiple insulating films, undercut regions (UCAs), metal layers (MTLs), and etching-resistant layers (ESLs). The multiple insulating films, undercut regions (UCAs), and metal layers (MTLs) shown in Figure 19 may have the same configuration as those shown in Figure 18, so a repeated explanation is omitted.

[0257] Referring to Figure 19, the etching prevention layer ESL can be positioned between the second gate insulating film GI2 and the second interlayer insulating film ILD2, which are located below the metal layer MTL. The etching prevention layer ESL extends further in the first direction (e.g., the lateral direction) than the portion of the insulating film that forms the undercut region UCA, but the extended portion can have a relatively thin thickness. That is, in the etching process, the portion extending beyond the portion of the insulating film may be etched, and the upper part of the etching prevention layer ESL may be etched, forming an etching prevention residual film ESRL. The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer, and the etching prevention residual film ESRL may be a Ti residual film in the Mo / Ti bilayer or a Mo residual film in the Mo single layer.

[0258] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface SSX of the insulating film including the second interlayer insulating film ILD2, as well as the side surface of the etching prevention layer ESL and the top surface of the etching prevention residual film ESRL. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other in a planar view. For example, in a planar view, the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0259] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE can be separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other in a planar view. For example, in a planar view, the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other.

[0260] Figure 20 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 20 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 19 above.

[0261] Referring to Figure 20, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions (UCAs), metal layers (MTLs), and etching-preventing layers (ESLs). The multiple insulating films and metal layers (MTLs) shown in Figure 20 may have the same configuration as the multiple insulating films and metal layers (MTLs) shown in Figure 18, so a repeated explanation is omitted.

[0262] Referring to Figure 20, the undercut region UCA can be formed in a region containing an insulating film including an active buffer layer ABUF or a second interlayer insulating film ILD2 and an etching prevention layer ESL. For example, the etching prevention layer ESL can be located between the second gate insulating film GI2 and the second interlayer insulating film ILD2, which are located below the metal layer MTL. The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. Unlike the etching prevention layer ESL shown in Figure 18 or Figure 19, the etching prevention layer ESL can be located between insulating films without extending in a first direction (e.g., the lateral direction). That is, in the etching process, the etching prevention layer ESL may be over-etched and removed together with the insulating film located below the etching prevention layer ESL.

[0263] Referring to Figure 20, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the side surface of the insulating film including the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0264] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0265] FIG. 21 is an exemplary cross-sectional view of the moisture permeation prevention structure MPS shown in FIGS. 15 to 17. In the following description, in explaining the embodiment shown in FIG. 21, unless otherwise specified, it is the same as that described with reference to FIGS. 1 to 20 above.

[0266] Referring to FIG. 21, the moisture permeation prevention structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in FIG. 21, the undercut region UCA can be formed in the second gate insulating film GI2 to the second interlayer insulating film ILD2. The light emitting layer EL can be interrupted by the undercut region UCA. Since the plurality of insulating films shown in FIG. 21 can have the same configuration as the plurality of insulating films shown in FIG. 18, repeated description is omitted.

[0267] The moisture permeation prevention structure MPS shown in FIG. 21 may be different from the moisture permeation prevention structure MPS shown in FIG. 18 in terms of the shape of the undercut region UCA. The moisture permeation prevention structure MPS shown in FIG. 21 can include a step portion STP in the undercut region UCA.

[0268] The step portion STP can mean a step formed in the undercut region UCA where a part of the insulating film and the etching prevention layer ESL are not etched inside the lower part of the metal layer MTL. For example, when the second interlayer insulating film ILD2 is etched inside the lower part of the metal layer MTL, and insulating films such as the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 and the etching prevention layer ESL are not etched inside the lower part of the metal layer MTL, the step portion STP may be composed of the etching prevention layer ESL, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0269] The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may be composed of a Mo / Ti double layer or a Mo single layer.

[0270] Referring to Figure 21, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the side surface SSX of the second interlayer insulating film ILD2, the top and side surfaces of the etching prevention layer ESL, and the side surfaces of the second gate insulating film GI2, the second buffer layer BUF2, and the first interlayer insulating film ILD1. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0271] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0272] Figure 22 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 22 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 21 above.

[0273] Referring to Figure 22, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, stepped sections STP, and etching prevention layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 22 may have the same configuration as the multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 21, so a repeated explanation is omitted.

[0274] Referring to Figure 22, the etching prevention layer ESL is positioned to extend further in the first direction (e.g., the lateral direction) than the portion of the insulating film that forms the undercut region UCA on the stepped portion STP, but the extended portion can have a relatively thin thickness. That is, the portion extending beyond the portion of the insulating film may be etched during the etching process, forming an etching prevention residual film ESRL. The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer, and the etching prevention residual film ESRL may be a Ti residual film in the Mo / Ti bilayer or a Mo residual film in the Mo single layer.

[0275] Referring to Figure 22, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the side surface SSX of the second interlayer insulating film ILD2 and the side surface SSY of the etching prevention layer ESL, and the top and side surfaces of the etching prevention residual film ESRL. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0276] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0277] Figure 23 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In the following description, when explaining the embodiment shown in Figure 23, unless otherwise specified, the explanation is the same as that given above with reference to Figures 1 to 22.

[0278] Referring to Figure 23, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, stepped sections STP, and etching prevention layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 23 may have the same configuration as the multiple insulating films and metal layers MTL shown in Figure 21, so a repeated explanation is omitted.

[0279] Referring to Figure 23, the undercut region UCA can be formed in a region containing insulating films, including the second gate insulating film GI2 and the second interlayer insulating film ILD2, and an etching prevention layer ESL. For example, the etching prevention layer ESL can be located between the second gate insulating film GI2 and the second interlayer insulating film ILD2, which are located below the metal layer MTL. The etching prevention layer ESL can contain the same material as the second gate electrode GAT2. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. Unlike the etching prevention layer ESL shown in Figure 21 or Figure 22, the etching prevention layer ESL can be located between insulating films without extending in a first direction (e.g., lateral direction) on the stepped portion STP. That is, in the etching process, the etching prevention layer ESL may be over-etched, and a portion of the etching prevention layer ESL may be etched and removed.

[0280] Referring to Figure 23, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the side SSX of the second interlayer insulating film ILD2 and the side SSY of the etching prevention layer ESL, and the top surface UPZ and side SSZ of the second gate insulating film GI2. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0281] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0282] Figure 24 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 24 in the following description, unless otherwise specified, the explanation is the same as that given in Figures 1 to 23 above.

[0283] Referring to Figure 24, the moisture-proof structure MPS can include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in Figure 24, the undercut region UCA can be formed between the first buffer layer BUF1 and the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted by the undercut region UCA. The plurality of insulating films shown in Figure 24 may have the same configuration as the plurality of insulating films shown in Figure 18, so a repeated explanation is omitted.

[0284] The moisture-proof structure MPS may include a metal layer MTL located on the undercut region UCA. The metal layer MTL may have the same structure as, for example, the second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL. The metal layer MTL shown in Figure 18 may have the same configuration as the metal layer MTL shown in Figure 18, so a repeated explanation is omitted.

[0285] The moisture-proof structure MPS may include an etching-preventing layer ESL located below or in the undercut region UCA. The etching-preventing layer ESL may also be called an auxiliary metal layer AML. Referring to Figure 24, the etching-preventing layer ESL can be positioned between multiple insulating films located below the metal layer MTL. For example, the etching-preventing layer ESL can be positioned between a first interlayer insulating film ILD1 and a second buffer layer BUF2 located below the metal layer MTL. The etching-preventing layer ESL may extend further in the first direction (e.g., the lateral direction) than the portion of the insulating film forming the undercut region UCA. For example, the etching-preventing layer ESL may extend further on the first interlayer insulating film ILD1 than a portion of the insulating films such as the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2.

[0286] The etching prevention layer (ESL) may contain metallic materials. For example, the etching prevention layer (ESL) may contain, but is not limited to, a single or multiple layer of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. For example, the etching prevention layer (ESL) may contain the same material as the metallic pattern (TM). For example, the etching prevention layer (ESL) may consist of a Mo / Ti double layer or a Mo single layer.

[0287] The etching prevention layer (ESL) can prevent over-etching of some of the insulating films located at the bottom during etching processes that pattern metallic materials such as the anode electrode (AE) and the metal layer (MTL) or multiple insulating films in the process of forming the moisture-proof structure (MPS). For example, in the embodiment shown in Figure 24, a portion of the second buffer layer (BUF2), the second gate insulating film (GI2), and the second interlayer insulating film (ILD2) placed on the etching prevention layer (ESL) are etched, but the etching prevention layer (ESL) is not etched, thus forming an undercut region (UCA).

[0288] Referring to FIG. 24, the light-emitting layer EL can have a plurality of portions. As described above, the light-emitting layer EL can include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The light-emitting layer EL can further include a fourth portion FRPEL. As shown in the drawing, the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light-emitting layer EL are separated from each other.

[0289] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend in the first direction (e.g., the side surface direction) more than a part of the insulating film in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a part of the insulating film such as the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2 in order to form an undercut region UCA.

[0290] The third portion TPEL of the light-emitting layer EL can be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the upper surface of the etching prevention layer ESL while covering the side surface of the insulating film including the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2. The third portion TPEL of the light-emitting layer EL can overlap with the second portion SPEL of the light-emitting layer EL on the plane while being separated from the second portion SPEL of the light-emitting layer EL.

[0291] The fourth portion of the light-emitting layer EL, FRPEL, can be located on the metal layer MTL. The third layer M3 of the metal layer MTL can extend in the first direction (e.g., the lateral direction) beyond a portion of the second layer M2 of the metal layer MTL. For example, the fourth portion of the light-emitting layer EL, FRPEL, can be located on an extended portion of the third layer M3 of the metal layer MTL. Both the fourth portion FRPEL and the second portion SPEL of the light-emitting layer EL can be said to be located on the first layer M1 of the metal layer MTL, but the fourth portion FRPEL of the light-emitting layer EL is located directly on the third layer M3 of the metal layer MTL, and the second portion SPEL of the light-emitting layer EL is located directly on the first layer M1 of the metal layer MTL.

[0292] Furthermore, the cathode electrode CE may have multiple parts. As described above, the cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE may further include a fourth part FRPCE. As shown in the figure, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be separated from each other. Alternatively, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be said to be separate from each other.

[0293] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on the second portion SPEL of the light-emitting layer EL.

[0294] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0295] The fourth portion FRPCE of the cathode electrode CE can be located on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE can be located on the fourth portion FRPEL of the light-emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light-emitting layer EL may be separated from the second layer M2 of the metal layer MTL. Both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can be said to be located on the first layer M1 of the metal layer MTL. Furthermore, the fourth portion FRPCE of the cathode electrode CE can be in direct contact with the fourth portion FRPEL of the light-emitting layer EL, and the second portion SPCE of the cathode electrode CE can be in direct contact with the second portion SPEL of the light-emitting layer EL. Such configurations are also shown in Figures 25 to 29, and repeated explanations of the same configurations will be omitted.

[0296] Figure 25 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 25 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 24 above.

[0297] Referring to Figure 25, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions (UCAs), metal layers (MTL), and etching-preventing layers (ESL). The multiple insulating films, undercut regions (UCAs), and metal layers (MTL) shown in Figure 25 may have the same configuration as those shown in Figure 24, so a repeated explanation is omitted.

[0298] Referring to Figure 25, the etching prevention layer ESL can be positioned between the first interlayer insulating film ILD1 and the second buffer layer BUF2, located below the metal layer MTL. The etching prevention layer ESL extends further in the first direction (e.g., the lateral direction) than the portion of the insulating film that forms the undercut region UCA, but the extended portion can have a relatively thin thickness. That is, in the etching process, the portion extending beyond the portion of the insulating film may be etched, and the upper part of the etching prevention layer ESL may be etched, forming an etching prevention residual film ESRL. The etching prevention layer ESL can contain the same material as the metal pattern TM. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer, and the etching prevention residual film ESRL may be a Ti residual film in the Mo / Ti bilayer or a Mo residual film in the Mo single layer.

[0299] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the sides of the etching prevention layer ESL and the top surface of the etching prevention residual film ESRL, while covering the sides of the insulating film including the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0300] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0301] Figure 26 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 20 in the following explanation, unless otherwise specified, the explanation is the same as that given above with reference to Figures 1 to 25.

[0302] Referring to Figure 26, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions (UCAs), metal layers (MTLs), and etching-preventing layers (ESLs). The multiple insulating films and metal layers (MTLs) shown in Figure 26 may have the same configuration as those shown in Figure 24, so a repeated explanation is omitted.

[0303] Referring to Figure 26, the undercut region UCA can be formed in a region containing an insulating film including an active buffer layer ABUF or a second interlayer insulating film ILD2 and an etching prevention layer ESL. For example, the etching prevention layer ESL can be located between the first interlayer insulating film ILD1 and the second buffer layer BUF2, which are located below the metal layer MTL. The etching prevention layer ESL can contain the same material as the metal pattern TM. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. Unlike the etching prevention layer ESL shown in Figure 24 or Figure 25, the etching prevention layer ESL can be located between insulating films without extending in a first direction (e.g., the lateral direction). That is, in the etching process, the etching prevention layer ESL may be over-etched and removed together with the insulating film located below the etching prevention layer ESL.

[0304] Referring to Figure 26, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the sides of the second buffer layer BUF2 and the etching prevention layer ESL, and can cover the sides of the insulating film including the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1, as well as the top surface of the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0305] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0306] Figure 27 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 27 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 26 above.

[0307] Referring to Figure 27, the moisture-proof structure MPS can include at least one undercut region UCA among the multiple insulating films. In the embodiment shown in Figure 27, the undercut region UCA can be formed in the first interlayer insulating film ILD1 or the second interlayer insulating film ILD2. The light-emitting layer EL can be interrupted by the undercut region UCA. The multiple insulating films shown in Figure 27 may have the same configuration as the multiple insulating films shown in Figure 24, so a repeated explanation is omitted.

[0308] The moisture-proof structure MPS shown in Figure 27 may differ from the moisture-proof structure MPS shown in Figure 24 in terms of the shape of the undercut region UCA. The moisture-proof structure MPS shown in Figure 27 may include a stepped portion STP in the undercut region UCA.

[0309] The stepped portion STP can refer to a step formed in the undercut region UCA where some insulating film and the etching prevention layer ESL are not etched to the lower inward side of the metal layer MTL. For example, if the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 are etched to the lower inward side of the metal layer MTL, and insulating films such as the first interlayer insulating film ILD1 and the first gate insulating film GI1, and the etching prevention layer ESL are not etched to the lower inward side of the metal layer MTL, then the stepped portion STP can consist of the etching prevention layer ESL, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0310] The etching prevention layer (ESL) may contain the same material as the metal pattern (TM). For example, the etching prevention layer (ESL) may consist of a Mo / Ti bilayer or a Mo single layer.

[0311] Referring to Figure 27, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the sides of the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2, as well as the top and sides of the etching prevention layer ESL. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0312] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0313] Figure 28 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 28 in the following description, unless otherwise specified, the explanation is the same as that given above with reference to Figures 1 to 27.

[0314] Referring to Figure 28, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, stepped sections STP, and etching prevention layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 28 may have the same configuration as the multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 24, so a repeated explanation is omitted.

[0315] Referring to Figure 28, the etching prevention layer ESL extends further in the first direction (e.g., the lateral direction) than the portion of the insulating film that forms the undercut region UCA on the stepped portion STP, but the extended portion can have a relatively thin thickness. That is, in the etching process, the portion extending beyond the portion of the insulating film may be etched, and an etching prevention residual film ESRL may be formed. The etching prevention layer ESL can contain the same material as the metal pattern TM. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer, and the etching prevention residual film ESRL may be a Ti residual film in the Mo / Ti bilayer or a Mo residual film in the Mo single layer.

[0316] Referring to Figure 28, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the side surface SS1 of the second interlayer insulating film ILD2, the side surface SS2 of the second gate insulating film GI2, the side surface SS3 of the second buffer layer BUF2, and the side surface SS4 of the etching prevention layer ESL, and can cover the top surface USS and side surface SSS of the etching prevention residual film ESRL. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0317] Although Figure 28 does not explicitly show a configuration in which the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP while covering the side surface SS1 of the second interlayer insulating film ILD2, in other embodiments the third portion TPEL of the light-emitting layer EL can cover the side surface SS1 of the second interlayer insulating film ILD2.

[0318] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0319] Figure 29 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figures 15 to 17. In describing the embodiment shown in Figure 29 in the following description, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 28 above.

[0320] Referring to Figure 29, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, stepped sections STP, and etching prevention layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 29 may have the same configuration as the multiple insulating films and metal layers MTL shown in Figure 24, so a repeated explanation is omitted.

[0321] Referring to Figure 29, the undercut region UCA can be formed in a region containing an insulating film including a second interlayer insulating film ILD2, a second gate insulating film GI2, a second buffer layer BUF2, and an etching prevention layer ESL. For example, the etching prevention layer ESL can be located between the first interlayer insulating film ILD1 and the second buffer layer BUF2, which are located below the metal layer MTL. The etching prevention layer ESL can contain the same material as the metal pattern TM. For example, the etching prevention layer ESL may consist of a Mo / Ti bilayer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. Unlike the etching prevention layer ESL shown in Figure 27 or Figure 28, the etching prevention layer ESL is not located extending in a first direction (e.g., lateral direction) on the stepped portion STP, but can be located between the insulating films. That is, in the etching process, the etching prevention layer ESL may be over-etched, and a portion of the etching prevention layer ESL may be etched and removed.

[0322] Referring to Figure 29, the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP and can cover the sides of the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, and the etching prevention layer ESL, and can cover the top and sides of the first interlayer insulating film ILD1. The third portion TPEL of the light-emitting layer EL is separated from the second portion SPEL of the light-emitting layer EL, yet the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0323] Although Figure 29 does not explicitly show a configuration in which the third portion TPEL of the light-emitting layer EL is positioned on the stepped portion STP while covering the side surface SS1 of the second interlayer insulating film ILD2, in other embodiments the third portion TPEL of the light-emitting layer EL can cover the side surface SS1 of the second interlayer insulating film ILD2.

[0324] The third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0325] Figure 30 is an exemplary cross-sectional view of a display device 100 according to an embodiment of the present disclosure. In describing the embodiment shown in Figure 30 in the following description, unless otherwise specified, the same applies as described above with reference to Figures 1 to 29.

[0326] The display device 100 according to the embodiment shown in Figure 30 differs from the display devices shown in Figures 15 to 17 in that there are no discontinuities located in the outer discontinuity region OSTA and the inner discontinuity region ISTA, and the moisture-permeable barrier structure MPS is located in all of them. Furthermore, the structure of the moisture-permeable barrier structure MPS also differs from the display devices shown in Figures 15 to 17 in some respects.

[0327] Referring to Figure 30, the display device 100 may include a moisture-proof structure MPS. The moisture-proof structure MPS can be placed in the outer isolation region OSTA and the inner isolation region ISTA. For example, the moisture-proof structure MPS can be placed between the display region DA and the dam structure DAM, while being positioned between the camera hole CH and the dam structure on a plane.

[0328] The moisture-proof structure MPS may include at least one undercut region UCA among a plurality of insulating films. The moisture-proof structure MPS may include undercut regions located in the insulating films below a plurality of light-emitting elements EDs. The display device 100 shown in Figure 30 may have the same configuration as the display device 100 shown in Figure 13, except that the moisture-proof structure MPS has an auxiliary metal layer (AML) placed between the insulating films where the undercut region UCA is located.

[0329] Referring to Figure 30, the moisture-proof structure MPS may include an auxiliary metal layer AML in or below the undercut region UCA. The auxiliary metal layer AML can serve as an etching prevention layer ESL in the process of etching the metal layer when forming the moisture-proof structure MPS. In this disclosure, the auxiliary metal layer AML and the etching prevention layer ESL may be used interchangeably.

[0330] The auxiliary metal layer AML may contain metallic materials. For example, the auxiliary metal layer AML may contain, but is not limited to, a single layer or multiple layers of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. The auxiliary metal layer AML may contain the same material as the first gate electrode GAT1, the second gate electrode GAT2, or the metal pattern TM. For example, the auxiliary metal layer AML may consist of a Mo / Ti bilayer or a single layer of Mo.

[0331] Figure 31 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figure 30. In the following description, when explaining the embodiment shown in Figure 31, unless otherwise specified, the same information is provided for in reference to Figures 1 through 30 above.

[0332] Referring to Figure 31, the moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be located on an organic insulating film that is placed on a substrate SUB and is located beneath a plurality of light-emitting elements. The fact that the undercut region UCA is located on an organic insulating film means that at least one or more organic insulating films are etched to form the undercut region UCA. The organic insulating film on which the undercut region UCA is formed may be, for example, one or more of the first planarization layer PLN1 and the second planarization layer PLN2. Figure 31 shows an embodiment in which the moisture-proof structure MPS includes a first planarization layer PLN1 and the undercut region UCA is formed on the first planarization layer PLN1, but the embodiments of this disclosure are not limited to such embodiments. For example, embodiments of this disclosure may include embodiments in which the moisture-proof structure MPS includes one or more of the first planarization layer PLN1 and the second planarization layer PLN2, and the undercut region UCA is formed on one or more of the first planarization layer PLN1 and the second planarization layer PLN2.

[0333] The moisture-proof structure MPS may include at least one recess CONC among a plurality of insulating films. For example, the recess CONC may be located in an inorganic insulating film that is placed on a substrate SUB and is located beneath a plurality of light-emitting elements. The location of the recess CONC on an inorganic insulating film may mean that at least one or more of the inorganic insulating films are etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film located on a substrate SUB and beneath the light-emitting elements. For example, the inorganic insulating film may be one or more of the first buffer layer BUF1 and the second interlayer insulating film ILD2 and the insulating film located between the two layers. Figure 31 shows an embodiment in which the second interlayer insulating film ILD2 includes a recess CONC, but the embodiments of this disclosure are not limited to such embodiments.

[0334] The undercut region UCA of the organic insulating film can be located within the recess CONC. The undercut region UCA of the organic insulating film may expose a portion of the etching prevention layer ESL placed on the inorganic insulating film. For example, the undercut region UCA of the organic insulating film may expose the etching prevention layer ESL, and the light-emitting layer EL can be located on the exposed etching prevention layer ESL.

[0335] The moisture-proof structure MPS may include a metal layer MTL located on the undercut region UCA. The metal layer MTL may have the same structure as, for example, the second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL. The metal layer MTL shown in Figure 31 may have the same configuration as the metal layer MTL shown in Figure 14, so a repeated explanation is omitted.

[0336] The moisture-proof structure MPS may include an etching-preventing layer ESL located below or within an undercut region UCA. The etching-preventing layer ESL may also be an auxiliary metal layer AML. Referring to Figure 31, the etching-preventing layer ESL can be positioned between multiple insulating films located below the metal layer MTL. The etching-preventing layer ESL can be fixed and positioned within a recess CONC. For example, the etching-preventing layer ESL may be partially positioned between a second gate insulating film GI2 and a second interlayer insulating film ILD2 located below the metal layer MTL, and extend to be fixed within the recess CONC. An organic insulating film may be positioned on a portion of the etching-preventing layer ESL positioned within the recess CONC. For example, the etching-preventing layer ESL may be exposed by an undercut region UCA of the organic insulating film, and an emissive layer EL may be positioned on the exposed etching-preventing layer ESL.

[0337] The etching prevention layer (ESL) may contain metallic materials. For example, the etching prevention layer (ESL) may contain, but is not limited to, a single or multiple layer of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. The etching prevention layer (ESL) may contain the same material as the second gate electrode (GAT2). For example, the etching prevention layer (ESL) may consist of a Mo / Ti bilayer or a single layer of Mo.

[0338] The etching prevention layer ESL can prevent over-etching of a portion of the insulating film located at the bottom during the etching process in which metallic materials such as the anode electrode AE ​​and the metal layer MTL are patterned, or multiple insulating films are patterned to form a recess CONC, in the process of forming a moisture-proof structure MPS. For example, in the embodiment shown in Figure 31, an undercut region UCA may be formed in which a portion of the second interlayer insulating film ILD2 placed on the etching prevention layer ESL is etched, but the etching prevention layer ESL is not etched.

[0339] Referring to Figure 31, the light-emitting layer EL can have multiple parts. The light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL can be positioned so as to overlap with the light-emitting region EA on a plane. As shown in the figure, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other.

[0340] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend in a first direction (e.g., the lateral direction) beyond a portion of the insulating film, such as the second interlayer insulating film ILD2, in order to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend even further than a portion of the insulating film, such as the second interlayer insulating film ILD2, in order to form an undercut region UCA.

[0341] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the etching prevention layer ESL located within the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0342] Furthermore, the cathode electrode CE may have multiple parts. The cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE may be positioned such that the first part FPCE overlaps with the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other. Alternatively, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other.

[0343] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on a portion of the light-emitting layer EL that is separated from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE can also be located on the third layer M3 of the metal layer MTL. As shown in Figure 31, the second portion SPCE of the cathode electrode CE does not have to be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0344] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0345] Figure 32 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figure 30. In describing the embodiment shown in Figure 32 in the following description, unless otherwise specified, the explanation is the same as that given in Figures 1 to 31 above.

[0346] Referring to Figure 32, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etching-preventing layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 32 may have the same configuration as the multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 31, so a repeated explanation is omitted.

[0347] Referring to Figure 32, the etching prevention layer ESL can be positioned between multiple insulating films located below the metal layer MTL. The etching prevention layer ESL can be fixed and positioned within a recess CONC. For example, a portion of the etching prevention layer ESL can be positioned between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL, and it can extend to be fixed within the recess CONC. The portion of the etching prevention layer ESL that extends to be fixed within the recess CONC can have a relatively thin thickness. That is, in the etching process, a portion of the upper part of the etching prevention layer ESL fixed within the recess CONC may be etched, forming an etching prevention residual film ESRL. In this case, the etching prevention residual film ESRL may be a Ti residual film in a Mo / Ti bilayer or a Mo residual film in a Mo single layer. The organic insulating film can be positioned on a portion of the etching prevention residual film ESRL positioned within the recess CONC. For example, the etching prevention residual film ESRL may be exposed by an undercut region UCA of the organic insulating film, and the light-emitting layer EL may be positioned on the exposed etching prevention residual film ESRL.

[0348] Referring to Figure 32, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the etching-preventive residual film ESRL located within the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0349] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0350] Figure 33 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figure 30. In the following description, when explaining the embodiment shown in Figure 33, unless otherwise specified, the explanation is the same as that given with reference to Figures 1 to 32 above.

[0351] Referring to Figure 33, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etching-preventing layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 33 may have the same configuration as the multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 31, so a repeated explanation is omitted.

[0352] Referring to Figure 33, the etching prevention layer ESL can be placed between multiple insulating films located below the metal layer MTL. For example, part of the etching prevention layer ESL can be placed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. Unlike the etching prevention layer ESL shown in Figure 31 or Figure 32, the etching prevention layer ESL does not fix to the recess CONC but can be placed between insulating films. For example, in the etching process, the etching prevention layer ESL may be over-etched and a portion of the etching prevention layer ESL may be etched and removed. That is, the etching prevention layer ESL may not be placed in the recess CONC. The organic insulating film can be placed on a portion of the second gate insulating film GI2 located in the recess CONC. For example, the second gate insulating film GI2 may be exposed by an undercut region UCA of the organic insulating film, and the light-emitting layer EL may be located on the exposed second gate insulating film GI2.

[0353] Referring to Figure 33, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the second buffer layer BUF2 located within the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, yet on a plane, the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0354] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0355] Figure 34 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figure 30. In the following description of the embodiment shown in Figure 34, unless otherwise specified, the explanation is the same as that given in Figures 1 to 33 above.

[0356] Referring to Figure 34, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etching-preventing layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 34 may have the same configuration as those shown in Figure 34, so repeated explanations are omitted.

[0357] The moisture-proof structure MPS may include at least one recess CONC among a plurality of insulating films. For example, the recess CONC may be located on an inorganic insulating film that is positioned beneath a plurality of light-emitting elements on a substrate SUB. The position of the recess CONC on an inorganic insulating film may mean that at least one or more of the inorganic insulating films are etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film located on a substrate SUB and beneath the light-emitting elements. For example, the inorganic insulating film may be one or more of the first buffer layer BUF1 and the second interlayer insulating film ILD2 and the insulating film located between the two layers. Figure 34 shows an embodiment in which the second interlayer insulating film ILD2, the second gate insulating film GI2 and the second buffer layer BUF2 include a recess CONC, but the embodiments of this disclosure are not limited to such embodiments.

[0358] The moisture-proof structure MPS may include an etching-preventing layer ESL located in or below an undercut region UCA. The etching-preventing layer ESL may also be an auxiliary metal layer AML. Referring to Figure 34, the etching-preventing layer ESL can be positioned between multiple insulating films located below the metal layer MTL. The etching-preventing layer ESL can be fixed and positioned within a recess CONC. For example, the etching-preventing layer ESL may be partially positioned between a first interlayer insulating film ILD1 and a second buffer layer BUF2 located below the metal layer MTL, and extend to be fixed within the recess CONC. An organic insulating film may be positioned on a portion of the etching-preventing layer ESL positioned within the recess CONC. For example, the etching-preventing layer ESL may be exposed by an undercut region UCA of the organic insulating film, and an emissive layer EL may be positioned on the exposed etching-preventing layer ESL.

[0359] The etching prevention layer (ESL) may contain metallic materials. For example, the etching prevention layer (ESL) may contain, but is not limited to, a single or multiple layer of any of the following: molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof. The etching prevention layer (ESL) may contain the same materials as the metallic pattern (TM). For example, the etching prevention layer (ESL) may consist of a Mo / Ti double layer or a single layer of Mo.

[0360] The etching prevention layer ESL can prevent over-etching of some of the insulating films located at the bottom during the etching process in which metallic materials such as the anode electrode AE ​​and the metal layer MTL are patterned, or multiple insulating films are patterned to form a recess CONC, in the process of forming a moisture-proof structure MPS. For example, in the embodiment shown in Figure 34, a portion of the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2, which are placed on the etching prevention layer ESL, are etched, but an undercut region UCA can be formed in which the etching prevention layer ESL is not etched.

[0361] Referring to Figure 34, the light-emitting layer EL can have multiple parts. The light-emitting layer EL may include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL may be positioned to overlap with the light-emitting region EA on a plane. As shown in the figure, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be separated from each other. It can also be said that the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL are separated from each other.

[0362] Here, the second portion SPEL of the light-emitting layer EL can be located on the first layer M1 of the metal layer MTL. The first layer M1 of the metal layer MTL can extend further in the first direction (e.g., the lateral direction) than a portion of the insulating film such as the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 in order to form an undercut region UCA.

[0363] The third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the etching prevention layer ESL located within the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0364] Furthermore, the cathode electrode CE may have multiple parts. The cathode electrode CE may include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE may be positioned such that the first part FPCE overlaps with the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other. Alternatively, it can be said that the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE are separated from each other.

[0365] Here, the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be located on a portion of the light-emitting layer EL that is separated from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE can also be located on the third layer M3 of the metal layer MTL. As shown in Figure 34, the second portion SPCE of the cathode electrode CE does not have to be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0366] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0367] Figure 35 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figure 30. In describing the embodiment shown in Figure 35 in the following description, unless otherwise specified, the explanation is the same as that given in Figures 1 to 34 above.

[0368] Referring to Figure 35, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etching-preventing layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 35 may have the same configuration as the multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 34, so a repeated explanation is omitted.

[0369] Referring to Figure 35, the etching prevention layer ESL can be positioned between multiple insulating films located below the metal layer MTL. The etching prevention layer ESL can be fixed and positioned within a recess CONC. For example, a portion of the etching prevention layer ESL can be positioned between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL, and it can extend to be fixed within the recess CONC. The portion of the etching prevention layer ESL that extends to be fixed within the recess CONC can have a relatively thin thickness. That is, in the etching process, a portion of the upper part of the etching prevention layer ESL fixed within the recess CONC may be etched, forming an etching prevention residual film ESRL. In this case, the etching prevention residual film ESRL may be a Ti residual film in a Mo / Ti bilayer or a Mo residual film in a Mo single layer. The organic insulating film can be positioned on a portion of the etching prevention residual film ESRL positioned within the recess CONC. For example, the etching prevention residual film ESRL may be exposed by an undercut region UCA of the organic insulating film, and the light-emitting layer EL may be positioned on the exposed etching prevention residual film ESRL.

[0370] Referring to Figure 35, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the etching-preventive residual film ESRL located within the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, while the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0371] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0372] Figure 36 is an exemplary cross-sectional view of the moisture-permeable barrier structure MPS shown in Figure 30. In describing the embodiment shown in Figure 36 in the following description, unless otherwise specified, the explanation is the same as that given in Figures 1 to 35 above.

[0373] Referring to Figure 36, the moisture-permeable barrier structure MPS can include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etching-preventing layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 36 may have the same configuration as the multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 34, so a repeated explanation is omitted.

[0374] Referring to Figure 36, the etching prevention layer ESL can be placed between multiple insulating films located below the metal layer MTL. For example, part of the etching prevention layer ESL may be placed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL. Unlike the etching prevention layer ESL shown in Figure 34 or Figure 35, the etching prevention layer ESL does not fix to the recess CONC but can be placed between insulating films. For example, in the etching process, the etching prevention layer ESL may be over-etched, and part of the etching prevention layer ESL may be etched and removed. That is, the etching prevention layer ESL may not be placed in the recess CONC. An organic insulating film may be placed on part of the first interlayer insulating film ILD1 placed in the recess CONC. For example, the first interlayer insulating film ILD1 may be exposed by an undercut region UCA of the organic insulating film, and the light-emitting layer EL may be located on the exposed first interlayer insulating film ILD1.

[0375] Referring to Figure 36, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be located below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be fixed to the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the second buffer layer BUF2 located within the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, yet on a plane, the third portion TPEL and the second portion SPEL of the light-emitting layer EL can overlap each other.

[0376] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be located on the third portion TPEL of the light-emitting layer EL. The third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, yet the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0377] By including such a moisture-proof structure MPS in the display device, the light-emitting layer EL may be interrupted two or more times by the moisture-proof structure MPS. Therefore, it is possible to effectively prevent external moisture from penetrating through the camera hole and causing malfunctions.

[0378] A brief description of the embodiments of this disclosure described above is as follows:

[0379] Embodiments of the present disclosure can provide a display device including a substrate including a display area on which a plurality of light-emitting elements including a light-emitting layer are located, a camera hole located within the display area, and a first non-display area located between the display area and the camera hole, a dam located in the first non-display area, a plurality of insulating films disposed on the substrate and located below the plurality of light-emitting elements, and a moisture-permeable prevention structure disposed in the first non-display area and including at least one undercut area of ​​the plurality of insulating films.

[0380] In the display device according to the embodiment of this disclosure, the light-emitting layer extends from the display area to the boundary of the camera hole, and the light-emitting layer can be interrupted in the undercut area.

[0381] A display device according to an embodiment of the present disclosure may include a discontinuation portion located in a first non-display area.

[0382] In the display device according to the embodiment of the present disclosure, the discontinuity portion may include an inner discontinuity portion located between the display area and the dam and an outer discontinuity portion located between the dam and the camera hole.

[0383] In the display device according to the embodiments of this disclosure, the moisture-proof structure may include an internal moisture-proof structure located between the display area and the dam.

[0384] In the display device according to the embodiments of this disclosure, the moisture-proof structure may include an external moisture-proof structure located between the dam and the camera hole.

[0385] In the display device according to the embodiment of the present disclosure, the light-emitting layer extends from the display area to the boundary of the camera hole, the moisture-proof structure includes a metal layer located on the undercut area, and the light-emitting layer can be interrupted on the side of the metal layer.

[0386] In the display device according to the embodiments of this disclosure, the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer, wherein the second layer may have a shape that is recessed from the first and third layers.

[0387] In the display device according to the embodiments of this disclosure, the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer, and the first layer may have a shape that protrudes from the third layer.

[0388] In the display device according to the embodiments of this disclosure, the metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer, wherein the first layer and the third layer are made of the same material, and the second layer may be made of a different material from the first layer and the third layer.

[0389] In the display device according to the embodiments of this disclosure, the moisture-proof structure may include a stepped portion located in an undercut region and below the metal layer.

[0390] In the display device according to the embodiment of the present disclosure, the undercut region may be located in an inorganic insulating film that is placed on a substrate and is located below a plurality of light-emitting elements.

[0391] In the display device according to the embodiment of the present disclosure, the undercut region may be located in an organic insulating film that is placed on a substrate and is located below a plurality of light-emitting elements.

[0392] In the display device according to the embodiments of the present disclosure, the moisture-proof structure includes at least one recess of a plurality of insulating films, and the undercut region can be located within the recess.

[0393] In the display device according to the embodiments of the present disclosure, the moisture-preventing structure includes at least one recess of a plurality of insulating films, and the undercut region may be located in an organic insulating film that is placed on a substrate and is located beneath a plurality of light-emitting elements.

[0394] In the display device according to the embodiment of the present disclosure, the moisture-preventing structure includes at least one recess of a plurality of insulating films, the recess being located on a substrate and situated in an inorganic insulating film beneath a plurality of light-emitting elements.

[0395] In the display device according to the embodiment of the present disclosure, the moisture-proof structure includes a metal layer located on an undercut region, and may further include an auxiliary metal layer positioned below the metal layer and separated from it.

[0396] In the display device according to the embodiments of the present disclosure, the moisture-preventing structure includes at least one recess among a plurality of insulating films, and may further include an auxiliary metal layer disposed below the recess.

[0397] Embodiments of this disclosure can provide a display device that includes a display area, a non-display area adjacent to the display area, a camera hole positioned on a plane, separated from the display area and adjacent to the non-display area, a light-emitting element positioned on a plane so as to overlap with the display area, a dam structure positioned in the non-display area, and a plurality of metal layers, and includes a moisture-proof structure positioned adjacent to the dam structure.

[0398] In embodiments of this disclosure, the moisture-proof structure may include undercut regions adjacent to multiple metal layers.

[0399] In embodiments of this disclosure, the display device may further include a plurality of insulating layers beneath a plurality of metal layers.

[0400] In the embodiments of this disclosure, the plurality of metal layers may include a first metal layer and a second metal layer.

[0401] In the embodiments of this disclosure, the plurality of insulating layers may include a first insulating layer.

[0402] In embodiments of the present disclosure, the first metal layer may extend in a first direction beyond a portion of the first insulating layer to form an undercut.

[0403] In embodiments of this disclosure, the light-emitting element may include a light-emitting layer and a first electrode on the light-emitting layer.

[0404] In embodiments of the present disclosure, the light-emitting layer may include a first portion, a second portion, and a third portion. The first portion, the second portion, and the third portion may be separated from each other.

[0405] In the embodiments of this disclosure, the first portion of the light-emitting layer may overlap with the light-emitting region on a plane, and the second portion of the light-emitting layer may be on the first metal layer.

[0406] In embodiments of this disclosure, the third portion of the light-emitting layer can be positioned below the undercut region.

[0407] In the embodiments of this disclosure, the third portion and the second portion of the light-emitting layer can overlap each other on a plane, and the first portion of the light-emitting layer does not have to overlap with the second and third portions of the light-emitting layer on a plane.

[0408] In embodiments of the present disclosure, the light-emitting element may include a light-emitting layer and a first electrode on the light-emitting layer. The first electrode may include a first portion, a second portion, and a third portion.

[0409] In the embodiments of this disclosure, the first, second, and third portions of the first electrode may be separated from each other. The first portion of the first electrode layer may overlap with the light-emitting region on a plane, and the second portion of the first electrode may be on the first metal layer.

[0410] In embodiments of this disclosure, the light-emitting element may include a light-emitting layer and a first electrode on the light-emitting layer.

[0411] In the embodiments of this disclosure, the first electrode includes a first portion, a second portion, and a third portion, and the first, second, and third portions of the first electrode may be separated from each other.

[0412] In the embodiments of this disclosure, a first portion of the first electrode layer can overlap with the light-emitting region on a plane, and a third portion of the first electrode can be positioned below the undercut region.

[0413] In the embodiments of this disclosure, the third portion and the second portion of the light-emitting layer can overlap each other on a plane, and the first portion of the light-emitting layer does not have to overlap with the second and third portions of the light-emitting layer on a plane.

[0414] In the embodiments of this disclosure, the moisture-proof structure can be positioned on a plane between the dam structure and the camera hole.

[0415] In the embodiments of this disclosure, the dam structure can be positioned on a plane between the moisture-proof structure and the camera hole.

[0416] In embodiments of this disclosure, the moisture-proof structure may include a first moisture-proof structure and a second moisture-proof structure. The first moisture-proof structure may be positioned on a plane between the dam structure and the camera hole, and the dam structure may be positioned on a plane between the first moisture-proof structure and the second moisture-proof structure.

[0417] In the display device according to the embodiment of the present disclosure, an auxiliary metal layer may be further provided, which is located below a plurality of metal layers of the first moisture-proof structure.

[0418] In the display device according to the embodiment of the present disclosure, a second moisture-proof structure is arranged adjacent to the first moisture-proof structure, and an auxiliary metal layer is arranged between the first moisture-proof structure and the second moisture-proof structure.

[0419] In the display device according to the embodiment of the present disclosure, the auxiliary metal layer can be arranged on a plane so as to overlap with the first moisture-proof structure and the second moisture-proof structure.

[0420] A display device according to an embodiment of the present disclosure may further include a second moisture-proof structure arranged adjacent to and separated from a first moisture-proof structure on a plane, and a first auxiliary metal layer and a second auxiliary metal layer arranged separated from the first auxiliary metal layer. On a plane, the first auxiliary metal layer may be arranged overlapping with the first moisture-proof structure, and the second auxiliary metal layer may be arranged overlapping with the second moisture-proof structure.

[0421] A display device according to an embodiment of the present disclosure may further include at least one insulating layer disposed between a plurality of metal layers and an auxiliary metal layer. On a plane, the auxiliary metal layer may be arranged in contact with and overlapping with at least one insulating layer.

[0422] A display device according to an embodiment of the present disclosure may further include a thin-film transistor electrically connected to a light-emitting element and including a gate electrode. The auxiliary metal layer and the gate electrode may be made of the same material.

[0423] A display device according to an embodiment of the present disclosure may further include a thin-film transistor electrically connected to a light-emitting element and a metal pattern disposed separately below the active layer and the active layer. The auxiliary metal layer and the metal pattern may be made of the same material.

[0424] The above description is merely illustrative of the technical concept of this disclosure, and any person with ordinary skill in the art to which this disclosure belongs can make various modifications and variations without departing from the essential characteristics of this disclosure. Furthermore, the embodiments disclosed in this disclosure are for illustrative purposes only and not to limit the technical concept of this disclosure, and the scope of the technical concept of this disclosure is not limited by such embodiments.

Claims

1. A substrate including a display area on which a plurality of light-emitting elements, including a light-emitting layer, are located, a camera hole located within the display area, and a first non-display area located between the display area and the camera hole. The dam located in the first hidden area, A plurality of insulating films arranged on the substrate and located below the plurality of light-emitting elements, and A moisture-proof structure arranged in the first non-display region and including an undercut region of at least one insulating film among the plurality of insulating films, Includes, The moisture-proof structure includes a metal layer located on the undercut region. The undercut region is formed by the fact that the side surface of the at least one insulating film located beneath the metal layer is located inward from the side surface of the metal layer. The metal layer includes a first layer, a second layer located on the first layer, and a third layer located on the second layer. A display device having a shape in which the first layer protrudes from the third layer.

2. The light-emitting layer extends from the display area to the boundary of the camera hole, The display device according to claim 1, wherein the light-emitting layer is interrupted in the undercut region.

3. The invention further includes a discontinuity located in the first non-display region, The aforementioned discontinued portion is An inner discontinuity located between the display area and the dam, and The display device according to claim 1, further comprising an outer discontinuity located between the dam and the camera hole.

4. The display device according to claim 1, wherein the moisture-proof structure includes an inner moisture-proof structure located between the display area and the dam.

5. The display device according to claim 1, wherein the moisture-proof structure includes an outer moisture-proof structure located between the dam and the camera hole.

6. The light-emitting layer extends from the display area to the boundary of the camera hole, The display device according to claim 1, wherein the light-emitting layer is interrupted at the side surface of the metal layer.

7. The display device according to claim 1, wherein the first layer and the third layer are made of the same material, and the second layer is made of a different material from the first layer and the third layer.

8. The display device according to claim 1, wherein the moisture-proof structure includes a stepped portion located in the undercut region and below the metal layer.

9. The undercut region is located in the insulating film that is placed on the substrate and positioned beneath the plurality of light-emitting elements. The display device according to claim 1, wherein the insulating film is either an inorganic insulating film or an organic insulating film.

10. The moisture-proof structure includes at least one recess of the insulating film among the plurality of insulating films, The display device according to claim 1, wherein the undercut region is located within the recess.

11. The moisture-proof structure includes at least one recess of the insulating film among the plurality of insulating films, The undercut region is located in the insulating film that is placed on the substrate and positioned beneath the plurality of light-emitting elements. The display device according to claim 1, wherein the insulating film is either an inorganic insulating film or an organic insulating film.

12. Further containing an auxiliary metal layer, The moisture-proof structure includes at least one recess among the plurality of insulating films, The display device according to claim 1, wherein the auxiliary metal layer is disposed below the recess.

13. A display area and a non-display area adjacent to the display area, A camera hole located on a plane, separated from the display area and adjacent to the non-display area, A light-emitting element is arranged on a plane so as to overlap with the display area. The dam structure located in the aforementioned non-display area, and A first moisture-proof structure adjacent to the dam structure, comprising multiple metal layers, The first moisture-proof structure includes an undercut region of at least one insulating film among a plurality of insulating films arranged on a substrate including the display region and the non-display region. The undercut region is formed by the fact that the side surface of at least one insulating film located beneath the plurality of metal layers is located inward from the side surfaces of the plurality of metal layers. The plurality of metal layers include a first layer, a second layer located on the first layer, and a third layer located on the second layer. A display device having a shape in which the first layer protrudes from the third layer.

14. The display device according to claim 13, further comprising an auxiliary metal layer disposed beneath a plurality of metal layers of the first moisture-proof structure.

15. A second moisture-permeable structure adjacent to the first moisture-permeable structure, and The display device according to claim 13, further comprising an auxiliary metal layer disposed between the first moisture-proof structure and the second moisture-proof structure.

16. The display device according to claim 15, wherein the auxiliary metal layer overlaps with both the first moisture-proof structure and the second moisture-proof structure on a plane.

17. A second moisture-proof structure adjacent to and separated from the first moisture-proof structure on a plane, and It further includes a first auxiliary metal layer and a second auxiliary metal layer separated from the first auxiliary metal layer, The display device according to claim 13, wherein the first auxiliary metal layer overlaps with the first moisture-proof structure on a plane, and the second auxiliary metal layer overlaps with the second moisture-proof structure.

18. The present invention further includes at least one insulating film disposed between the plurality of metal layers and the auxiliary metal layer, The display device according to claim 14, wherein the auxiliary metal layer is in contact with and overlaps with the at least one insulating film on a plane.

19. The light-emitting element is electrically connected to the thin-film transistor which further includes a gate electrode, The display device according to claim 18, wherein the auxiliary metal layer and the gate electrode are made of the same material.

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