Composition for removing photoresist from a substrate and use of the composition

Abstract

The disclosed and claimed subject matter relates to photoresist stripper solutions that include (i) one or more inorganic bases; (ii) two or more organic solvents; (iii) one or more corrosion inhibitors, and may optionally include (iv) one or more second solvents.

Description

Technical Field

[0001] Generally, the disclosed and claimed subject matter relates to compositions having the ability to effectively remove photoresist from a substrate, and methods for using such compositions. The disclosed compositions need not substantially contain DMSO, NMP, and TMAH, and are preferably stripping agent solutions for photoresist removal that can be compatible with metals and passivating materials, such as polyimide.

Background Art

[0002] Photoresist strippers for the removal of thick photoresists used in wafer level packaging typically include different combinations of solvents, amines, quaternary ammonium hydroxides, inorganic hydroxides, co-solvents, corrosion inhibitors, and other additives. Many products for this application include DMSO or NMP as a solvent, and an amine or a quaternary ammonium hydroxide or both. Tetramethylammonium hydroxide (TMAH) is the most commonly used quaternary ammonium hydroxide due to its lower cost and good performance compared to other quaternary hydroxides. However, there are well-known potential health effects associated with TMAH. Alternatives to TMAH-containing stripper compositions are desired.

[0003] Inorganic bases, particularly alkali metal hydroxides, offer advantageous properties when used in photoresist strippers without the potential health risks associated with TMAHs. Inorganic bases have low cost and good thermal stability, resulting in photoresists with longer bath life compared to photoresist strippers using TMAHs. However, one problem with alkali metal hydroxides is their tendency to react with carbon dioxide from the atmosphere to form carbonates. While carbonates are water-soluble, they are typically not very soluble in organic solvents. Thus, photoresist strippers using alkali metal hydroxides typically have the problem of precipitation or sludge due to the formation of carbonate crystals that are insoluble in the organic solvent of the stripper; this can cause tool clogging and raise safety concerns regarding tool operation. Removing precipitated carbonates may require extra cleaning of process tools using water to dissolve and / or rinse them off, increasing maintenance costs. Therefore, solving the sludge problem in organic solvent-based strippers using inorganic bases, particularly alkali metal hydroxides, is important.

[0004] Many stripping solutions exist for removing photoresist (for example, U.S. Patent Application Publication No. 2019 / 0317409 describes a stripping solution for removing photoresist from a substrate comprising a primary solvent, a secondary solvent, an inorganic base, an amine, and a corrosion inhibitor). Improved stripping solution compositions are needed due to the increasing demand from wafer manufacturers for enhanced performance. When various materials are used in the substrate for various functions, the stripping agent may come into contact with these materials; therefore, it must have the ability to remove photoresist while being compatible with materials on the substrate that should not be removed. Furthermore, given recent constraints on solvents used in stripping formulations, such as those concerning N-methyl-2-pyrrolidone (NMP) and dimethyl sulfoxide (DMSO), there is a need for new formulations with more environmentally friendly solvents. [Overview of the Initiative]

[0005] overview This summary section does not identify all embodiments and / or incremental novel aspects of the subject matter disclosed and claimed. Rather, this summary merely provides a preliminary discussion of different embodiments and corresponding points that are novel to the prior art and known art. For further details and / or possible overall picture of the subject matter disclosed and claimed and embodiments, please refer to the detailed description section and corresponding drawings of this disclosure discussed further below.

[0006] The subject matter of the disclosure and claims relates to a photoresist stripping solution for effectively removing or peeling off positive or negative photoresists, photoresists after an etching process, or etching residues derived from a substrate. The disclosed and claimed photoresist stripping solution has the ability to retain liquid when exposed to temperatures below normal room temperature, which are typically encountered during transport, storage, and use in some manufacturing facilities, and has a particularly high load capacity for resist material.

[0007] The disclosed and claimed photoresist stripping solution contains an inorganic hydroxide that results in reduced carbonate crystal formation and extended bath life. The disclosed and claimed photoresist stripping solution does not contain NMP and DMSO and is particularly useful for removing both positive and negative liquid photoresists. The disclosed and claimed photoresist stripping solution does not harm materials present on the substrate, particularly on metals, on silicon, and on passivation materials such as polyimide.

[0008] The disclosed and claimed photoresist stripping solution is: (i) one or more inorganic bases; (ii) Two or more organic solvents; and (iii) One or more corrosion inhibitors This includes. In a further embodiment, the solution comprises (iv) one or more secondary solvents. In a further embodiment of this embodiment, the solution essentially consists of (i), (ii), and (iii). In a further embodiment of this embodiment, the solution essentially consists of (i), (ii), (iii), and (iv). In another further embodiment of this embodiment, the solution consists of (i), (ii), and (iii). In another further embodiment of this embodiment, the solution consists of (i), (ii), (iii), and (iv).

[0009] In one other embodiment, the solution comprises (i) one or more inorganic bases selected from NaOH, KOH and combinations thereof. In one embodiment of this embodiment, (i) one or more inorganic bases comprises NaOH. In one other embodiment of this embodiment, (i) one or more inorganic bases comprises KOH. In one other embodiment of this embodiment, (i) one or more inorganic bases comprises a combination of NaOH and KOH.

[0010] In one other embodiment, the solution comprises (ii) two or more organic solvents, wherein (a) the first solvent is selected from glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohols and combinations thereof, and (b) the second solvent is a polyol solvent (i.e., a polyhydroxy-containing solvent). In one aspect of this embodiment, (ii) the two or more organic solvents comprise a glycol ether solvent. In one aspect of this embodiment, (ii) the two or more organic solvents comprise an ether alcohol solvent. In one aspect of this embodiment, (ii) the two or more organic solvents comprise an aromatic ring-containing alcohol. In one aspect of this embodiment, (ii) the two or more organic solvents comprise a glycol ether solvent and an ether alcohol solvent. In one aspect of this embodiment, (ii) the two or more organic solvents comprise a glycol ether solvent and an aromatic ring-containing alcohol. In one aspect of this embodiment, (ii) the two or more organic solvents comprise an ether alcohol solvent and an aromatic ring-containing alcohol.

[0011] In one exemplary embodiment of the subject matter of the disclosure and claims, the photoresist stripping solution is: (i) One or more inorganic bases containing approximately 0.5 wt% to 5 wt% potassium hydroxide; (ii) two or more organic solvents comprising a. approximately 30 wt% to 90 wt% triethylene glycol monomethyl ether and b. approximately 5 wt% to 30 wt% diethylene glycol; and (iii) One or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 5 wt% Includes.

[0012] In one exemplary embodiment of the subject matter of the disclosure and claims, the photoresist stripping solution is: (i) One or more inorganic bases containing approximately 0.5% to 5% potassium hydroxide; (ii) two or more organic solvents comprising a. approximately 30 wt% to 90 wt% triethylene glycol monomethyl ether and b. approximately 5 wt% to 30 wt% diethylene glycol; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 5 wt%; and (iv) One or more secondary solvents containing approximately 5 wt% to 30 wt% of the polyol solvent. Includes.

[0013] In one other embodiment, the subject matter of disclosure and claims relates to a method for removing photoresist and associated polymer materials from a substrate using the disclosed and claimed photoresist stripping solution. In one embodiment of this embodiment, the photoresist is removed from the substrate by contacting the substrate having photoresist on it with one or more photoresist stripping solutions for a time sufficient to remove a desired amount of photoresist, removing the substrate from the stripping solution, rinsing the stripping solution from the substrate with DI water or a solvent, and drying the substrate.

[0014] Furthermore, the subject matter of the disclosure and patent claims is toward the use and synthesis of the disclosed and patent claims chemical formulations.

[0015] In one other embodiment, the subject matter disclosed and claimed is directed to an electronic device manufactured by the novel method disclosed.

[0016] Other features and advantages of the disclosed and claimed subject matter, along with example solutions illustrating the principle of the disclosed and claimed subject matter, will become apparent from the following more detailed description.

[0017] The embodiments disclosed and claimed provide one or more of the following advantages: less solid precipitation during use; the ability of the composition to remain liquid at temperatures lower than normal room temperature and at temperatures often encountered during transport and storage; the composition having a flash point significantly higher than normal processing temperatures; the photoresist stripper having good cleaning ability; high loading capacity; reduced crystallization and precipitation of alkali metal carbonates or other alkali metal compounds even when the stripper solution contains alkali metal hydroxides; compatibility with passivation materials such as metals, silicon, and polyimides; and extended bath life.

[0018] The order in which the different processes described herein are discussed is provided for clarity. In general, the processes disclosed herein can be carried out in any suitable order. Furthermore, each of the different features, techniques, configurations, etc., disclosed herein may be discussed in different parts of this disclosure, but each of these concepts can be implemented independently of or in appropriate combinations with one another. Thus, the subject matter disclosed and claimed can be embodied and considered in many different ways.

[0019] definition To facilitate understanding of the claimed subject matter, specific terms will be used hereafter to refer to and describe the embodiments shown. However, this is not intended to limit the claimed subject matter, and modifications, further alterations, and further uses of the claimed principle exemplified in the claims are intended, where such modifications would ordinarily come to mind for those skilled in the art relating to this disclosure.

[0020] All references cited herein, including publications, patent applications, and patents, are incorporated herein by reference to the same extent as each reference is individually and specifically indicated and as is provided herein.

[0021] The use of the terms “a,” “an,” and “the” and similar reference terms in the context of describing the subject matter disclosed and claimed (particularly in the claims below) is construed to cover both singular and plural unless otherwise indicated herein or unless clearly contrary to the context. The terms “comprising,” “having,” “including,” and “containing” are construed as open-ended terms unless otherwise indicated herein (i.e., “including, but not limited to”). Unless otherwise indicated herein, the descriptions of ranges of values ​​are intended simply as abbreviations for each individual value within that range, and each individual value is incorporated herein as it is separately described herein. All methods described herein can be performed in any suitable order unless otherwise indicated herein or unless clearly contrary to the context. The use of any and all examples or exemplary words given herein (for example, “such as”) is intended simply to facilitate the understanding of the subject matter disclosed and claimed, and is not intended to limit the scope of the subject matter disclosed and claimed unless otherwise stated herein. No term in this specification should be construed as meaning that any element not described in any claim is essential for the disclosure and for the practice of the claimed subject matter.

[0022] Preferred embodiments of the disclosed and claimed subject matter are described herein, including the best mode known to the inventors for carrying out the disclosed and claimed subject matter. Variations of those preferred embodiments will become apparent to those skilled in the art upon reading the following description. The inventors expect those skilled in the art to employ such variations appropriately, and intend the disclosed and claimed subject matter to be practiced otherwise than as specifically described herein. Accordingly, this disclosure and the claimed subject matter include all modifications and equivalents of the subject matter recited in the claims appended hereto when permitted by applicable law. Further, unless otherwise stated herein or clearly contradicted by context, any combination of the above-described elements in all possible variations thereof is included in the disclosed and claimed subject matter.

[0023] For ease of reference, the term "microelectronic device" or "semiconductor substrate" corresponds to semiconductor wafers, flat panel displays, phase change memory devices, solar panels and other products comprising solar substrates, photovoltaic cells and microelectromechanical systems (MEMS) manufactured for use in microelectronics, integrated circuits or computer chip applications. The term "microelectronic device" is not meant to be limited by any means of manufacture, and is understood to include any substrate that ultimately becomes a microelectronic device or microelectronic assembly. Microelectronic devices and semiconductor substrates may include low-k dielectric materials, barrier materials and metals such as Al, Cu, SnAg alloys, W, Ti, TiN, one or more passivation layers such as polyimide or polybenzoxazole, and Si and other materials thereon.

[0024] As defined herein, a "low-k dielectric material" corresponds to any material used as a dielectric material in a stacked microelectronic device and having a dielectric constant of less than about 3.5. Preferably, the low-k dielectric material includes low-polarity materials such as silicon-containing organic polymers, silicon-containing hybrid organic / inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), silicon dioxide, and carbon-doped oxide (CDO) glass. It is recognized that low-k dielectric materials can have variable density and variable porosity.

[0025] As defined herein, the term "barrier material" corresponds to any material used in the art to seal metal wiring, such as copper interconnects, to minimize the diffusion of that metal, such as copper, into the dielectric material. Preferred barrier layer materials include tantalum, titanium, titanium tungsten, ruthenium, hafnium, and other refractory metals, as well as their nitrides and silicides.

[0026] As used herein, "practically free" is defined as being less than approximately 1 wt%, more preferably less than approximately 0.5 wt%, and most preferably less than approximately 0.2 wt%. "Substantially free" further includes approximately 0.0 wt%. The term "free" means 0.0 wt%. In some embodiments, when describing a composition that is substantially free of water, it is intended to mean that water may be added as an impurity with the components; however, the amount of water added with the components should be less than approximately 0.1 wt%; however, during manufacture and use, water may be absorbed from the atmosphere. In other embodiments, being substantially free of water may refer to a composition in which water is not present in amounts exceeding approximately 1 wt%. In other embodiments, being substantially free of water may refer to a composition in which water is not present in amounts exceeding approximately 3 wt%. In other embodiments, water may be added as part of the raw materials, and the level of water may be greater than 2 wt% and less than 5%.

[0027] The term "approximately" or "about" when used in conjunction with a measurable numerical variable refers to the value of the specified variable and all values ​​of the variable that fall within the wider of either the experimental error range of the specified value (e.g., within the 95% confidence interval for the mean) or a certain percentage range of the specified value (e.g., ±10%, ±5%).

[0028] In all such compositions where the specific components of the composition are discussed in terms of a range of wt% including a lower limit of 0, such components may or may not be present in various specific embodiments of the composition, and if such components are present, they may be present at a concentration as low as 0.001 wt% relative to the total weight of the composition in which they are used. Unless otherwise stated, all specified wt% of a composition are relative to the total weight of the composition. Furthermore, unless otherwise stated, all wt% are “neat” and mean that they do not include the aqueous solution in which they exist when added to the composition. Any reference to “at least one” can be replaced with “one or more.” “At least one” and / or “one or more” include “at least two” or “two or more” and “at least three” and “three or more,” etc.

[0029] The composition comprises an inorganic base; two or more organic solvents; one or more corrosion inhibitors; and one or more optional secondary solvents.

[0030] In further embodiments, the composition is of various concentrations (i) Inorganic hydroxides; (ii) Two or more glycol ethers, ether alcohol solvents or aromatic alcohols; and (iii) one or more corrosion inhibitors; and (iv) Optionally, one or more secondary solvents of polyols Essentially, this becomes. In such embodiments, the combined amounts of (i), (ii), (iii), and (iv) are not equal to 100 wt%, and may include other components (e.g., further solvents including water, general additives, and / or impurities) that do not significantly alter the effectiveness of the cleaning composition.

[0031] In one other embodiment, the composition is of various concentrations (i) Inorganic hydroxides; (ii) Two or more ether alcohol solvents or aromatic alcohols; and (iii) One or more corrosion inhibitors This consists of (i), (ii), and (iii). In such embodiments, the combined amount of (i), (ii), and (iii) is approximately equal to 100 wt%, but other small and / or trace amounts of impurities may be included, present in amounts that do not significantly alter the effectiveness of the composition. For example, in one such embodiment, the cleaning composition may contain 2 wt% or less of impurities. In another embodiment, the cleaning composition may contain 1 wt% or less of impurities. In a further embodiment, the cleaning composition may contain 0.05 wt% or less of impurities.

[0032] With respect to wt%, when relating to the composition of the compositions of the present invention as described herein, it is understood that in no case the wt% of all components, including non-essential components such as impurities, shall not exceed 100 wt% in total. In compositions "essentially consisting of" the described components, such components may total 100 wt% of the composition or less than 100 wt%. If the components total less than 100 wt%, such composition may contain some small amounts of non-essential contaminants or impurities. For example, in one such embodiment, the composition may contain 2 wt% or less of impurities. In one other embodiment, the rinse may contain 1 wt% or less of impurities. In a further embodiment, the composition may contain 0.05 wt% or less of impurities. In one other such embodiment, the components may form at least 90 wt%, more preferably at least 95 wt%, more preferably at least 99 wt%, more preferably at least 99.5 wt%, and most preferably at least 99.8 wt%, and may include other components that do not affect the performance of the cleaning composition. Otherwise, if there are no significant non-essential impurity components, the composition of all essential components will be essentially 100 wt% in total. [Modes for carrying out the invention]

[0033] Detailed explanation Both the general description above and the detailed description below are illustrative and descriptive, and are not intended to limit the subject matter claimed. The purpose, features, advantages and ideas of the subject matter disclosed will be apparent to those skilled in the art from the descriptions provided herein, and the subject matter disclosed will be immediately implementable by those skilled in the art based on the descriptions provided herein. Any description of “preferred embodiments” and / or examples showing preferred forms for carrying out the subject matter disclosed is included for illustrative purposes only and is not intended to limit the scope of the claims.

[0034] It will also be apparent to those skilled in the art that various modifications can be made to how the disclosed subject matter is implemented based on the embodiments described herein, without departing from the spirit and scope of the disclosed subject matter.

[0035] As stated above, the subject of disclosure is: (i) one or more inorganic bases; (ii) Two or more organic solvents, wherein (a) the first solvent is selected from glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohols and combinations thereof, and (b) the second solvent is a polyol solvent; and (iii) One or more corrosion inhibitors The present invention relates to a photoresist stripping agent solution that contains, essentially consists of, or comprises (iv) one or more secondary solvents.

[0036] In a solution containing or essentially consisting of the listed components, the wt% of components (i), (ii), (iii), or the total wt% of (i), (ii), (iii), and (iv) is 100 wt% or less. In a solution consisting of the listed components, the wt% of components (i), (ii), (iii), or the total wt% of (i), (ii), (iii), and (iv) is equal to 100 wt%.

[0037] In one exemplary embodiment, the photoresist stripping agent solution is (i) one or more undiluted inorganic bases in an amount of approximately 0.5 wt% to 5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents It contains such that the total wt% of components (i), (ii), (iii), and (iv) is 100 wt% or less. In a further embodiment of this embodiment, one or more undiluted inorganic bases contain KOH.

[0038] In one exemplary embodiment, the photoresist stripping agent solution is (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to 2.5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents It contains, and the total wt% of components (i), (ii), (iii), and (iv) is 100 wt% or less. In a further embodiment of this embodiment, one or more undiluted inorganic bases contain KOH.

[0039] In one exemplary embodiment, the photoresist stripping agent solution is (i) one or more undiluted inorganic bases in an amount of approximately 0.5 wt% to 5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents Essentially, the wt% of the total of components (i), (ii), (iii), and (iv) is 100 wt% or less. In a further embodiment of this embodiment, one or more undiluted inorganic bases contain KOH.

[0040] In one exemplary embodiment, the photoresist stripping agent solution is (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to 2.5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents Essentially, the wt% of the total of components (i), (ii), (iii), and (iv) is 100 wt% or less. In a further embodiment of this embodiment, one or more undiluted inorganic bases contain KOH.

[0041] In one exemplary embodiment, the photoresist stripping agent solution is (i) one or more undiluted inorganic bases in an amount of approximately 0.5 wt% to 5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents It consists of the above, and the total wt% of components (i), (ii), (iii), and (iv) is equal to 100 wt. In a further embodiment of this embodiment, one or more undiluted inorganic bases contain KOH.

[0042] In one exemplary embodiment, the photoresist stripping agent solution is (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to 2.5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents It consists of, and the total wt% of components (i), (ii), (iii), and (iv) is equal to 100 wt%. In a further embodiment of this embodiment, one or more undiluted inorganic bases contain KOH.

[0043] In particular, photoresist stripping solutions can be used to remove polymer resist materials present in single-layer or certain types of two-layer resists. For example, typically, a two-layer resist has either a first inorganic layer covered by a second polymer layer, or two polymer layers.

[0044] Photoresist stripping agent solution components (i) Inorganic bases As described above, the subject matter disclosed and claimed comprises one or more inorganic bases. Preferably, one or more inorganic bases comprise at least one alkali metal hydroxide, or a mixture of different alkali metal hydroxides. Suitable inorganic bases include, but are not limited to, sodium hydroxide, potassium hydroxide, lithium hydroxide, rubidium hydroxide, and cesium hydroxide. In some embodiments, sodium hydroxide is preferably included. In such embodiments, sodium hydroxide is used as an aqueous solution, for example, a 48 wt% aqueous solution. In other such embodiments, sodium hydroxide is used as a solid, for example, as 85 wt% or 90 wt% flakes.

[0045] Metal hydroxides may be present in any undiluted amount within the range of about 0.1% to about 5%, or about 0.1 wt% to about 4 wt%, or about 0.9 wt% to about 4 wt%, or about 0.1 wt% to about 0.8 wt%, or about 0.4 wt% to about 0.5 wt%, or about 0.1 wt% to about 0.2 wt%, relative to the total weight of the composition. More preferably, metal hydroxides are present in an amount of 3.5 wt% or less. In a particular preferred composition, metal hydroxides are present in an amount of about 1.0 wt% to about 2.5 wt%. In a particular preferred composition, metal hydroxides are present in an amount of about 1.5 wt% to about 2.25 wt%.

[0046] In one embodiment, the solution contains about 1.0 wt% to about 2.5 wt% of undiluted KOH. In a further embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.25 wt% of undiluted KOH. In one other embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.1 wt% of undiluted KOH. In one other embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.05 wt% of undiluted KOH. In one other embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.0 wt% of undiluted KOH. In one other embodiment of this embodiment, the solution contains about 1 wt% of undiluted KOH. In one other embodiment of this embodiment, the solution contains about 1.25 wt% of undiluted KOH. In one other aspect of this embodiment, the solution contains about 1.5 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 1.75 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 1.8 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 1.9 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.0 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.05 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.1 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.15 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.2 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.25 wt% undiluted KOH. In one other aspect of this embodiment, the solution contains about 2.3 wt% undiluted KOH.

[0047] In one embodiment, the solution contains about 1.0 wt% to about 2.5 wt% of undiluted NaOH. In a further embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.25 wt% of undiluted NaOH. In one other embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.1 wt% of undiluted NaOH. In one other embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.05 wt% of undiluted NaOH. In one other embodiment of this embodiment, the solution contains about 1.75 wt% to about 2.0 wt% of undiluted NaOH. In one other embodiment of this embodiment, the solution contains about 1 wt% of undiluted NaOH. In one other embodiment of this embodiment, the solution contains about 1.25 wt% of undiluted NaOH. In one other aspect of this embodiment, the solution contains about 1.5 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 1.75 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 1.8 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 1.9 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.0 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.05 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.1 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.15 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.2 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.25 wt% undiluted NaOH. In one other aspect of this embodiment, the solution contains about 2.3 wt% undiluted NaOH.

[0048] (ii) Organic solvents The solutions disclosed and claimed comprise two or more organic solvents (i.e., a first solvent and a second solvent), wherein (a) the first solvent is selected from glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohols and combinations thereof, and (b) the second solvent is a polyol solvent. The two solvents are distinct from each other.

[0049] In one embodiment, the solution comprises two or more organic solvents in an amount of about 90 wt% to about 97 wt%. In a further embodiment of this embodiment, the solution comprises two or more organic solvents in an amount of about 94 wt% to about 97 wt%. In a further embodiment of this embodiment, the two or more organic solvents comprise (a) a first solvent in an amount of about 60 wt% to about 80 wt% and (b) a second solvent in an amount of about 10 wt% to about 30 wt%. In a further embodiment of this embodiment, the two or more organic solvents comprise (a) a first solvent in an amount of about 68 wt% to about 77 wt% and (b) a second solvent in an amount of about 11 wt% to about 28 wt%.

[0050] First solvent In some embodiments, the first solvent is selected from ether alcohols, aromatic ring-containing alcohol solvents, or mixtures thereof. One type of ether alcohol solvent may be a glycol ether. Suitable glycol ether solvents include, but are not limited to, diethylene glycol butyl ether (DB), diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol propyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether, propylene glycol propyl ether, dipropylene glycol propyl ether, propylene glycol phenyl ether, propylene glycol n-butyl ether, dipropylene glycol n-butyl ether, ethylene glycol propyl ether, ethylene glycol butyl ether, ethylene glycol phenyl ether, tripropylene glycol methyl ether, dipropylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether (TEGME), triethylene glycol monomethyl ether, triethylene glycol monopropyl ether, and triethylene glycol monobutyl ether. Other suitable types of ether alcohol solvents are not glycol ethers (i.e., other alcohols having an ether group). Examples include 3-methoxy-3-methyl-1-butanol (MMB), furfuryl alcohol, and tetrahydrofurfuryl alcohol.

[0051] Suitable aromatic ring-containing alcohol solvents include substituted benzenes, such as benzyl alcohol, benzyl ethanol, and benzyl propanol.

[0052] In one embodiment, the first solvent comprises triethylene glycol monomethyl ether (TEGME). In a further embodiment of this embodiment, the first solvent is about 60 wt% to about 80 wt% triethylene glycol monomethyl ether (TEGME). In a further embodiment of this embodiment, the first solvent is about 68 wt% to about 77 wt% triethylene glycol monomethyl ether (TEGME).

[0053] second solvent As described above, the second solvent is different from the first solvent and is a polyol solvent. In some embodiments, the second solvent includes one or more of ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), dipropylene glycol, glycerol, and propylene glycol (PG), but is not limited to the following. In a further embodiment of this embodiment, the second solvent includes about 10 wt% to about 30 wt% of ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), dipropylene glycol, glycerol, and propylene glycol (PG). In a further embodiment of this embodiment, the second solvent includes about 10 wt% to about 30 wt% of diethylene glycol (DEG) and propylene glycol (PG). In a further embodiment of this embodiment, the second solvent includes about 11 wt% to about 28 wt% of diethylene glycol (DEG) and propylene glycol (PG).

[0054] In one embodiment, the two or more organic solvents comprise (a) a first solvent comprising about 60 wt% to about 80 wt% of one or more ether alcohols, aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent comprising about 10 wt% to about 30 wt% of one or more polyol solvents. In a further embodiment of this embodiment, the two or more organic solvents comprise (a) a first solvent comprising about 68 wt% to about 77 wt% of one or more ether alcohols, aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent comprising about 11 wt% to about 28 wt% of one or more polyol solvents.

[0055] In one embodiment, the two or more solvents include (a) a first solvent containing about 60 wt% to about 80 wt% of triethylene glycol monomethyl ether (TEGME), and (b) a second solvent containing about 10 wt% to about 30 wt% of one or more polyol solvents.

[0056] In one embodiment, two or more organic solvents include (a) a first solvent in an amount of about 60 wt% to about 80 wt%, which is one or more ether alcohols, aromatic ring-containing alcohols, or mixtures thereof, and (b) a second solvent in an amount of about 10 wt% to about 30 wt%, which is one or more ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), glycerol, propylene glycol (PG), and mixtures thereof.

[0057] In one embodiment, the two or more organic solvents include (a) a first solvent containing about 68 wt% to about 77 wt% of triethylene glycol monomethyl ether (TEGME), and (b) a second solvent containing about 11 wt% to about 28 wt% of ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), glycerol, propylene glycol (PG), and mixtures thereof. In a further embodiment of this embodiment, the two or more organic solvents include (a) a first solvent containing about 68 wt% to about 77 wt% of triethylene glycol monomethyl ether (TEGME), and (b) a second solvent containing about 11 wt% to about 28 wt% of diethylene glycol (DEG) and propylene glycol (PG).

[0058] In other embodiments, two or more organic solvents are included in amounts of about 50 wt% to about 90 wt% or 55 wt% to about 90 wt% based on the weight of the composition. Other embodiments of which are disclosed and claimed include about 60 wt% to about 88 wt% or 65% to 85% glycol ether solvent and / or aromatic alcohol. The two or more organic solvents, individually or in total, may be within the range defined by the following list of weight percent: 50, 55, 58, 60, 62, 65, 67, 70, 72, 75, 77, 80, 82, 85, 88, and 90.

[0059] In some embodiments, the solution does not contain or is essentially free of the amide-containing solvent. Essentially free means that the amount is less than 1 percent, less than 0.1 wt%, less than 0.01 wt%, or less than 0.001 wt%, or not present, where free means undetectable or zero.

[0060] In other embodiments, the solution may not contain or be essentially free of sulfur-containing solvents. In a further embodiment of this embodiment, the composition may not contain or be essentially free of dimethyl sulfoxide (DMSO) and n-methyl-2-pyrrolidone (NMP). Essentially free means in amounts of less than 1 percent, less than 0.1 wt%, less than 0.01 wt%, or less than 0.001 wt%, or not present, where free means undetectable or 0.

[0061] (iii) Corrosion inhibitors The solutions to be disclosed and claimed comprise one or more corrosion inhibitors. Suitable corrosion inhibitors include, but are not limited to, aromatic hydroxyl compounds and aromatic polyhydroxyl compounds, e.g., catechol and resorcinol; alkylcatechols, e.g., methylcatechol, ethylcatechol and t-butylcatechol, phenol and pyrogallol; aromatic triazoles, e.g., benzotriazole; alkylbenzotriazoles and aminobenzotriazoles, e.g., 1-aminobenzotriazole; thiazoles, e.g., 2-aminobenzothiazole (ABT); sugar alcohols, e.g., glycerol, xylitol and sorbitol; metal salts, e.g., copper(II) nitrate; copper(II) bromide; copper(II) chlorate; copper(II) chloride; copper(II) fluorosilicate; copper(II) formate; copper(II) selenate; copper(II) sulfate; carboxylic acids, e.g., sebacic acid, formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, maleic acid, fumarole The present invention includes organic corrosion inhibitors comprising: lactic acid, benzoic acid, phthalic acid, 1,2,3-benzenetricarboxylic acid, glycolic acid, lactic acid, malic acid, citric acid, acetic anhydride, phthalic anhydride, maleic anhydride, succinic anhydride, salicylic acid, gallic acid, and gallic acid esters, such as methyl gallate and propyl gallate; organic salts of carboxylic acids containing the above organic compounds; and chelate compounds, such as phosphonic acid-based chelate compounds (including 1,2-propanediaminetetramethylene phosphonic acid and hydroxyethane phosphonic acid), carboxylic acid-based chelate compounds (such as ethylenediaminetetraacetic acid and its sodium and ammonium salts, dihydroxyethylglycine and nitrilotriacetic acid), amine-based chelate compounds (such as bipyridine, tetraphenylporphyrin and phenanthroline), and oxime-based chelate compounds (such as dimethylglyoxime and diphenylglyoxime). In other embodiments, one or more corrosion inhibitors may consist only of one or more copper salts, such as copper(II) nitrate; copper(II) bromide; copper(II) chlorate; copper(II) chloride; copper(II) fluorosilicate; copper(II) formate; copper(II) selenite and / or copper(II) sulfate.In yet another embodiment, the composition may comprise the above-mentioned organic corrosion inhibitor and / or chelating compound and one or more copper salts. In yet another embodiment, one or more corrosion inhibitors may be copper(II) nitrate (e.g., NADA / 1N is about 26.3% copper(II) nitrate hemi(pentahydrate - non-oxidizing agent)), copper(II) bromide; copper(II) chlorate; copper(II) chloride; copper(II) fluorosilicate; copper(II) formate; copper(II) selenite; copper(II) sulfate; and / or resorcinol. In yet another embodiment, the corrosion inhibitor may comprise copper(II) nitrate and resorcinol.

[0062] In other embodiments, the corrosion inhibitor may include an aliphatic or aromatic polyhydroxyl compound, which is ethylene glycol; 1,2-propanediol (propylene glycol); 1,3-propanediol; 1,2,3-propanediol; 1,2-butanediol; 1,3-propanediol; 2,3-butanediol; 1,4-butanediol; 1,2,3-butanetriol; 1,2,4-butanetriol; 1,2-pentanediol; 1, 3-pentanediol; 1,4-pentanediol; 2,3-pentanediol; 2,4-pentanediol; 3,4-pentanediol; 1,2,3-pentanetriol; 1,2,4-pentanetriol; 1,2,5-pentanetriol; 1,3,5-pentanetriol; etohexadiol; p-methane-3,8-polyhydroxyl compound; 2-methyl-2,4-pentanediol; 2,2-dimethyl-1,3-propanediol; glycerin; trimethylolpropane; xylitol Arabitol; 1,2-or 1,3-cyclopentanediol; 2,3-norbornanediol; 1,8-octanediol; 1,2-cyclohexanedimethanol; 1,3-cyclohexanedimethanol; 1,4-cyclohexanedimethanol; 2,2,4-trimethyl-1,3-pentanediol; hydroxypivalylhydroxypivalate; 2-methyl-1,3-propanediol; 2-butyl-2-ethyl-1,3-propanediol; 2-ethyl-2-isobutyl-1,3-propanediol This includes pandiols; 1,6-hexanediol; 2,2,4,4-tetramethyl-1,6-hexanediol; 1,10-decanediol; 1,4-benzenedimethanol; hydrogenated bisphenol A; 1,1,1-trimethylolpropane; 1,1,1-trimethylolethane; pentaerythritol; erythritol; treitol; dipentaerythritol; sorbitol; mannitol; resorcinol; catechol, etc., and combinations of two or more of the aforementioned polyhydroxyl compounds.

[0063] In some embodiments, one or more corrosion inhibitors are present in the solution at levels of about 0.005 wt% to about 10 wt%. In one embodiment, the solution contains about 0.25 wt% to about 5 wt% or 0.1 wt% to about 4 wt% or 0.25 wt% to about 2 wt%. One or more corrosion inhibitors may be present in any amount defined by endpoints selected from the following wt%: 0.005, 0.02, 0.08, 0.1, 0.2, 0.25, 0.3, 0.4, 0.5, 0.7, 0.9, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10. The first and second corrosion inhibitors can be used in the composition. The subject matter of this disclosure and claims includes a method of treating a semiconductor substrate with the composition to remove a photoresist without damaging a passivation layer, such as PI and PBO, or any film, layer, metal or other structure on the substrate. The preferred temperature for processing semiconductor substrates is approximately 70°C. For many applications, temperatures of approximately 45°C to 90°C or approximately 50°C to 75°C are useful. Lower contact temperatures are appropriate in certain applications where the substrate is sensitive or where longer removal times are required. For example, in the case of reprocessing substrates, it may be appropriate to maintain the stripping solution at a temperature of at least 20°C for a longer period to remove the photoresist and avoid damage to the substrate.

[0064] In some embodiments, one or more corrosion inhibitors comprise one or more of BZT, sorbitol, resorcinol, sebaciic acid, glycerol, and copper(II) nitrate. In some embodiments, these corrosion inhibitors are present (either individually or in combination) in amounts of about 0.01 wt% to about 2 wt%. In some embodiments, the corrosion inhibitors are present (either individually or in combination) in amounts of about 0.2 wt% to about 1 wt%. In some embodiments, these corrosion inhibitors are present (either individually or in combination) in amounts of about 0.5 wt%.

[0065] In some embodiments, one or more corrosion inhibitors include BZT. In one embodiment of this embodiment, the solution contains about 0.5 wt% to about 1 wt% of BZT. In another embodiment of this embodiment, the solution contains about 0.5 wt% of BZT. In yet another embodiment of this embodiment, the solution contains about 1.0 wt% of BZT.

[0066] In some embodiments, one or more corrosion inhibitors include sorbitol. In one embodiment of this embodiment, the solution contains about 0.2 wt% to about 1 wt% of sorbitol. In another embodiment of this embodiment, the solution contains about 0.2 wt% of sorbitol. In another embodiment of this embodiment, the solution contains about 0.5 wt% of sorbitol. In another embodiment of this embodiment, the solution contains about 1.0 wt% of sorbitol.

[0067] In some embodiments, one or more corrosion inhibitors include resorcinol. In one embodiment of this embodiment, the solution contains about 0.2 wt% to about 1 wt% of resorcinol. In another embodiment of this embodiment, the solution contains about 0.2 wt% of resorcinol. In another embodiment of this embodiment, the solution contains about 0.5 wt% of resorcinol. In another embodiment of this embodiment, the solution contains about 1.0 wt% of resorcinol.

[0068] In some embodiments, one or more corrosion inhibitors contain glycerol. In one embodiment of this embodiment, the solution contains about 0.2 wt% to about 1 wt% glycerol. In another embodiment of this embodiment, the solution contains about 0.2 wt% glycerol. In another embodiment of this embodiment, the solution contains about 0.5 wt% glycerol. In another embodiment of this embodiment, the solution contains about 1.0 wt% glycerol.

[0069] In some embodiments, one or more corrosion inhibitors include sebacic acid. In one embodiment of this embodiment, the solution contains about 0.2 wt% to about 1 wt% sebacic acid. In another embodiment of this embodiment, the solution contains about 0.2 wt% sebacic acid. In another embodiment of this embodiment, it contains about 0.5 wt% sebacic acid. In another embodiment of this embodiment, the solution contains about 1.0 wt% sebacic acid.

[0070] In some embodiments, one or more corrosive well-filling agents contain copper nitrate. In one other embodiment of this embodiment, the solution contains about 0.005 wt% to about 0.5 wt% copper nitrate. In one other embodiment of this embodiment, the solution contains about 0.01 wt% copper nitrate. In one other embodiment of this embodiment, the solution contains about 0.2 wt% copper nitrate. In one other embodiment of this embodiment, the solution contains 0.5 wt% copper nitrate.

[0071] (iv) Secondary solvent (optional) In some embodiments, a secondary solvent may be included in addition to the solvent described above. Alternatively, in some embodiments, the stripping agent solution may not contain a secondary solvent, or may not contain a secondary solvent at all.

[0072] In some embodiments, the secondary solvent includes water or an alcohol containing one hydroxyl group.

[0073] The secondary organic solvent may be a linear or branched aliphatic or aromatic alcohol. Examples of secondary alcohols include methanol, ethanol, propanol, isopropyl alcohol, butanol, tert-butyl alcohol, tert-amyl alcohol, 3-methyl-3-pentanol, 1-octanol, 1-decanol, 1-undecanol, 1-dodecanol, 1-tridecanol, 1-tetradecanol, 1-pentadecanol, 1-hexadecanol, 9-hexadecen-1-ol, 1-heptadecanol, 1-octadecanol, 1-nonadecanol, 1-eicosanol, 1-heneicosanol, 1-docosanol, 13-docosen-1-ol, 1-tetracosanol, 1-hexacosanol, 1-heptacosanol, 1-octacosanol, 1-triacontanol, 1-dotriacontanol, 1-tetratriacontanol, and cetearyl alcohol.

[0074] When used, the secondary organic solvent may be present in the composition in amounts of about 0.02% to about 50%, or about 0.08% to about 38%, or about 0.1% to about 35%, or about 0.2% to about 33%, or about 0.3% to about 20%, or about 1% to about 15%. In an alternative embodiment, the secondary solvent may be present in any amount defined by endpoints selected from the following wt%: 0.02, 0.08, 0.1, 0.2, 0.3, 0.4, 0.5, 0.7, 0.9, 1, 3, 5, 8, 10, 12, 15, 17, 20, 23, 25, 28, 30, 32, 35, 37, 40, 43, 45, 47, and 50.

[0075] Other optional components or components not considered In some embodiments, the disclosed and claimed solutions are substantially free of, or do not contain, one or more of the following in any combination: nitrogen-containing solvents, bischoline salts, tricholine salts, oxoammonium compounds, hydroxylamines and their derivatives, hydrogen peroxide, oxidizing agents, surfactants, and combinations thereof (these terms are defined above).

[0076] In some embodiments, the compositions disclosed herein are formulated to be substantially free of, or not free of, at least one of the following chemical compounds: alkylthiols and organosilanes.

[0077] In some embodiments, the disclosed and claimed solutions are formulated to be substantially free of or free of one or more halide-containing compounds, for example: substantially free of or free of one or more fluorine, bromine, chlorine, or iodine-containing compounds.

[0078] In some embodiments, the disclosed and claimed solutions are substantially free of, or do not contain, sulfonic acid and / or phosphonic acid and / or sulfuric acid and / or nitric acid and / or hydrochloric acid.

[0079] In some embodiments, the disclosed and claimed solutions are substantially free of, or do not contain, ethyldiamine, sodium-containing compounds, and / or calcium-containing compounds, and / or manganese-containing compounds, or magnesium-containing compounds, and / or chromium-containing compounds, and / or sulfur-containing compounds, and / or silane-containing compounds, and / or phosphorus-containing compounds.

[0080] In some embodiments, the disclosed and claimed solutions are substantially free of surfactants or do not contain surfactants.

[0081] In some embodiments, the disclosed and claimed solutions are substantially free of, or do not contain, amphoteric salts, and / or cationic surfactants, and / or anionic surfactants, and / or zwitter surfactants, and / or nonionic surfactants.

[0082] In some embodiments, the disclosed and claimed solutions are substantially free of or do not contain imidazole and / or anhydrous.

[0083] In some embodiments, the disclosed and claimed solutions are substantially free of or do not contain pyrrolidone and / or acetamide.

[0084] In some embodiments, the disclosed and claimed solutions are substantially free of or do not contain any amines and alkanolamines.

[0085] In some embodiments, the disclosed and claimed solutions are substantially free of, or do not contain, peroxide compounds, and / or peroxides, and / or persulfides, and / or percarbonates, as well as their acids and salts.

[0086] In some embodiments, the disclosed and claimed solutions are substantially free of, or do not contain, iodates and / or perboric acid and / or percarbonates and / or peracids and / or cerium compounds and / or cyanides and / or periodic acid and / or ammonium molybdate and / or ammonia and / or abrasives.

[0087] How to use The disclosed and claimed subject matter further includes a method for removing, whole or partially, one or more photoresists or similar materials from a substrate using one or more disclosed and claimed photoresist stripping solutions. As described above, polymer resist materials present in a single layer or certain types of two-layer resists can be removed using the disclosed and claimed photoresist stripping solutions. By using the method described below, a single layer of polymer resist can be effectively removed from a standard wafer having a single polymer layer. Furthermore, this method can be used to remove a single polymer layer from a wafer having two layers comprising a first inorganic layer and a second or outer polymer layer. Finally, two polymer layers can be effectively removed from a wafer having two layers comprising two polymer layers.

[0088] In one embodiment of this configuration, a process or method for removing a photoresist or similar material from a substrate is: (i) A step of contacting the substrate with one or more photoresist stripping solutions for a time sufficient to remove a desired amount of photoresist or similar material; (ii) The process of removing the substrate from the release agent solution; (iii) A step of rinsing off the release agent solution from the substrate using DI water or solvent; and (iv) Optionally, a step to dry the substrate. Includes.

[0089] In one embodiment, step (i) includes immersing a substrate in one or more photoresist stripping solutions, and optionally stirring the substrate to facilitate the removal of the photoresist. Such stirring can be carried out by mechanical stirring, by circulation, or by bubbling an inert gas through the composition.

[0090] In one embodiment, step (ii) includes rinsing the rinsed substrate with water or alcohol. In one embodiment of this embodiment, DI water is water in a preferred form. In one other embodiment of this embodiment, isopropanol (IPA) is a preferred solvent. In one other embodiment of this embodiment, components subject to oxidation are rinsed or may be rinsed under an inert atmosphere.

[0091] By utilizing the above methods (and variations thereof), the disclosed and claimed photoresist stripping solutions can be used to remove thick positive or negative photoresists, and thin positive or negative photoresists. In advanced packaging applications for semiconductor devices, the thick photoresist may be a resist of about 5 μm to about 100 μm or more, or about 15 μm to 100 μm, or about 20 μm to about 100 μm. In other cases, a chemical solution can be used to remove a photoresist of about 1 μm to about 100 μm or more, or about 2 μm to 100 μm, or about 3 μm to 100 μm. [Examples]

[0092] Hereafter, more specific embodiments and experimental results of this disclosure will be referenced to provide support for such embodiments. Examples are given below to better illustrate the subject matter disclosed and should not be construed as limiting the subject matter disclosed.

[0093] It will be apparent to those skilled in the art that various modifications and alterations can be made to the disclosed subject matter and specific examples given herein without departing from the spirit and scope of the disclosed subject matter. Accordingly, the subject matter of this disclosure, including the explanations provided by the following examples, is intended to cover modifications and alterations to the disclosed subject matter that fall within the scope of the claims and their equivalents.

[0094] Materials and methods All materials used in this patent application were purchased from and / or available from Sigma Aldrich and used in the as-delivered formulations.

[0095] Cleaning performance and polyimide (PI) compatibility were tested using optical and scanning electron microscopes. Cu and Al etching rates were determined by measuring the film thickness using a four-point probe RESMAP before and after treatment of the formulation.

[0096] The following abbreviations will be used in the various compositions listed in the table below. [Table 1] Low-temperature curing PI is a polyimide passivation layer (or insulating layer) that cures at approximately 250°C or less.

[0097] In the example, various stripping compositions (examples and comparative examples) containing the formulations identified in the following table were tested for their ability to remove photoresist from semiconductor wafer samples. The coupon-sized semiconductor wafer samples were plated silicon wafers with Cu pillars and Sn / Ag solder caps, on which a certain thickness of spin-on photoresist was present. Photoresist removal was performed using an immersion process in a beaker. The photoresist on the test coupon was a negative-type spin-on photoresist. Other test coupons had a polyimide (PI) passivation layer on which they were present. Unless otherwise noted, all material amounts in the table are recorded in wt% values ​​where necessary and reflect the "undiluted" values. Any remaining weight in the formulation is due to water present in the raw materials.

[0098] Table 1 lists the etching rates, PI compatibility, and photoresist removal efficiency of Cu and Al. The test results recorded in Table 1 concern the removal of photoresist from patterned coupons and the compatibility with separate coupons having a PI passivation layer under specific processing conditions (temperature and time). Table 1. Comparative Example Formulations [Table 2] Table 2. Example formulations [Table 3] Table 3. Example formulations [Table 4]

[0099] Analysis of the example formulations Analysis 1: Corrosion inhibitor and etching rate Tables 4 and 5 describe (i) comparative stripping solutions and (ii) solutions disclosed and claimed, for which Cu and Al etching rates were measured using immersion treatment. Tests were performed using blanket Cu and Al wafers. For the immersion treatment, three coupon-sized samples of semiconductor wafers were treated in a beaker. 100 grams of stripping composition were placed in the beaker and heated to the target temperature. When the stripping composition was at the target temperature, the three coupons were placed in holders in the beaker and gently stirred with a stirring bar. The temperature was maintained at the treatment temperature shown in the table throughout the treatment. After a total treatment time of 25 minutes, the coupons were removed from the beaker, rinsed with DI water and IPA, and dried with a nitrogen stream.

[0100] Using RESMAP, the thickness of the Cu or Al layer was measured before and after treatment for each coupon, and the changes in thickness and etching rate were calculated. In Tables 4 and 5, a single corrosion inhibitor or a combination of two corrosion inhibitors was investigated by monitoring the Cu etching rate and the aluminum etching rate. All corrosion inhibitors listed in Tables 4 and 5 reduced Cu etching to varying degrees compared to no corrosion inhibitor (Comparative Example 2) (compounds 1-17). The solutions disclosed and claimed in Tables 4 and 5, with the exception of compound 4-7, significantly reduced the Al etching rate compared to Comparative Examples 1 and 2. Table 4. Effect of corrosion inhibitors on Cu and Al etching rates [Table 5] Table 5. Effect of corrosion inhibitors on Cu and Al etching rates [Table 6]

[0101] Analysis 2: Resist cleaning performance Table 6 describes various (i) comparative stripping solutions and (ii) solutions disclosed and claimed, tested using a semiconductor wafer having a 65 μm thickness negative-type spin-on photoresist plated with Cu pillars and Sn / Ag solder caps, and an immersion treatment. For the immersion treatment, a sample of coupon-sized semiconductor wafer was treated in a beaker. 100 grams of stripping solution were placed in the beaker and heated to a target temperature of 80°C. When the stripping solution was at the target temperature, the coupon was placed in a holder in the beaker and gently stirred with a stirring bar. The coupon was kept in contact with the solution during the washing process, while maintaining the temperature at the treatment temperature. After one set of treatments, the coupon was removed from the beaker, rinsed with DI water and IPA, and dried with a nitrogen stream.

[0102] Resist removal was defined as "clean" if all resist was removed from the wafer coupon surface; "mostly clean" if at least 95% of the resist was removed from the surface; and "partially clean" if approximately 80% of the resist was removed. All formulations were able to completely remove positive-type photoresist at 80°C for 50 minutes, with the exception of Examples 8, 12, and 16, where the coupon was mostly clean after 50 minutes. Table 6: Resist removal performance [Table 7]

[0103] Analysis 4: Polyimide compatibility Table 7 describes the results for (i) comparative stripping solutions and (ii) solutions disclosed and claimed, evaluated using low-temperature cured polyimide (PI) films. These tests were performed using semiconductor wafers patterned with cured PI films. For the immersion treatment, coupon-sized semiconductor wafer samples were treated in a beaker. 100 grams of stripping solution were added to the beaker and heated to the target temperature. When the stripping solution was at the treatment temperature, the coupon was placed in a holder in the beaker and gently stirred with a stirring bar. The temperature was maintained at the treatment temperature throughout the treatment. After a total treatment time of 90 minutes, the coupon was removed from the beaker, rinsed with DI water and IPA, and dried with a nitrogen stream.

[0104] The pattern of the PI film was monitored using an optical microscope and a scanning electron microscope before and after processing for each coupon tested. Note that cracks or visible damage on the film surface indicate poor PI compatibility. All examples disclosed and claimed, with the exception of Example 13, showed good compatibility after 90 minutes, while Comparative Example 1 showed PI attack. Table 7: PI compatibility [Table 8]

[0105] Although the subject matter of the disclosure and claims is described and illustrated to some extent, the disclosure is for illustrative purposes only, and it is understood that a person skilled in the art can make many changes to the conditions and order of processes without departing from the intent and scope of the subject matter of the disclosure and claims.

[0106] Therefore, a person skilled in the art may make various modifications, and equivalents may be substituted for their elements without departing from the scope of the disclosed and claimed subject matter. In addition, many modifications can be made to adapt certain conditions or materials to the teachings of the disclosed and claimed subject matter without departing from the essential scope of the disclosed and claimed subject matter. Furthermore, all numerical values ​​specified in the detailed description are to be interpreted as explicitly specifying both exact and approximate values. The following embodiments can be cited as examples of the present invention. (Note 1) (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to 2.5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents A photoresist stripping agent solution comprising the above, wherein the sum of constituent components (i), (ii), (iii), and (iv) is 100 wt% or less. (Note 2) (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to 2.5 wt%; (ii) Two or more different organic solvents comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents A photoresist stripping agent solution comprising essentially the components (i), (ii), (iii), and (iv), with the sum of these components being 100 wt% or less. (Note 3) (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to 2.5 wt%; (ii) Two or more different organic solvents comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent containing one or more polyol solvents; (iii) one or more corrosion inhibitors in an amount of approximately 0.01 wt% to approximately 2 wt%; and (iv) Optionally, one or more secondary solvents A photoresist stripping agent solution comprising the following components, wherein the sum of components (i), (ii), (iii), and (iv) is equal to 100 wt%. (Note 4) The photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases include KOH. (Note 5) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.75 wt% to approximately 2.25 wt% of undiluted KOH. (Note 6) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.75 wt% to approximately 2.1 wt% of undiluted KOH. (Note 7) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.75 wt% to approximately 2.05 wt% of undiluted KOH. (Note 8) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.75 wt% to approximately 2.0 wt% of undiluted KOH. (Note 9) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1 wt% undiluted KOH. (Note 10) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.25 wt% undiluted KOH. (Note 11) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.5 wt% undiluted KOH. (Note 12) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.75 wt% undiluted KOH. (Note 13) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.8 wt% undiluted KOH. (Note 14) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 1.9 wt% undiluted KOH. (Note 15) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 2.0 wt% undiluted KOH. (Note 16) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 2.05 wt% undiluted KOH. (Note 17) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases contain approximately 2.1 wt% undiluted KOH. (Note 18) A photoresist stripping solution according to any one of the appendices 1 to 3, wherein the one or more undiluted inorganic bases include one or more of sodium hydroxide, potassium hydroxide, lithium hydroxide, rubidium hydroxide, and cesium hydroxide. (Note 19) A photoresist stripping agent solution according to any one of the appendices 1 to 3, comprising approximately 94 wt% to approximately 97 wt% of the two or more organic solvents. (Note 20) The photoresist stripping solution according to any one of the appendices 1 to 3, wherein the two or more organic solvents comprise (a) a first solvent containing about 60 wt% to about 80 wt% of one or more ether alcohols, aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent containing about 10 wt% to about 30 wt% of one or more polyol solvents, wherein the first solvent and the second solvent are different from each other. (Note 21) The photoresist stripping solution according to any one of the appendices 1 to 3, wherein the two or more organic solvents comprise (a) a first solvent comprising about 68 wt% to about 77% of one or more ether alcohols, aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent comprising about 11 wt% to about 28 wt% of one or more polyol solvents, wherein the first solvent and the second solvent are different from each other. (Note 22) The photoresist stripping solution according to any one of the appendices 1 to 3, wherein the two or more organic solvents comprise (a) a first solvent containing about 60 wt% to about 80 wt% of triethylene glycol monomethyl ether (TEGME) and (b) a second solvent containing about 10 wt% to about 30 wt% of one or more polyol solvents, wherein the first solvent and the second solvent are different from each other. (Note 23) The photoresist stripping solution according to any one of the appendices 1 to 3, wherein the two or more organic solvents comprise (a) a first solvent containing about 60 wt% to about 80 wt% of one or more ether alcohols, aromatic ring-containing alcohols, or mixtures thereof, and (b) a second solvent containing about 10 wt% to about 30 wt% of one or more ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), glycerol, propylene glycol (PG), and mixtures thereof, wherein the first solvent and the second solvent are different from each other. (Note 24) The photoresist stripping solution according to any one of the appendices 1 to 3, wherein the two or more organic solvents comprise (a) a first solvent containing about 68 wt% to about 77 wt% of triethylene glycol monomethyl ether (TEGME), and (b) a second solvent containing about 11 wt% to about 28 wt% of ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), glycerol, propylene glycol (PG), and mixtures thereof, wherein the first solvent and the second solvent are different from each other. (Note 25) The photoresist stripping solution according to any one of the appendices 1 to 3, wherein the two or more organic solvents comprise (a) a first solvent containing about 68 wt% to about 77 wt% of triethylene glycol monomethyl ether (TEGME) and (b) a second solvent containing about 11 wt% to about 28 wt% of diethylene glycol (DEG) and propylene glycol (PG), and the first solvent and the second solvent are different from each other. (Note 26) A photoresist stripping solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors include one or more of BZT, sorbitol, resorcinol, sebaciic acid, glycerol, and copper(II) nitrate. (Note 27) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.5 wt% to approximately 1 wt% of BZT. (Note 28) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.5 wt% BZT. (Note 29) The photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 1 wt% BZT. (Note 30) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 0.2 wt% to about 1 wt% of sorbitol. (Note 31) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors comprises about 0.2 wt% sorbitol. (Note 32) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors comprises about 0.5 wt% sorbitol. (Note 33) The photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 1 wt% sorbitol. (Note 34) The photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.2 wt% to approximately 1 wt% of resorcinol. (Note 35) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.2 wt% resorcinol. (Note 36) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.5 wt% resorcinol. (Note 37) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 1 wt% resorcinol. (Note 38) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 0.2 wt% to about 1 wt% glycerol. (Note 39) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 0.2 wt% glycerol. (Note 40) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 0.5 wt% glycerol. (Note 41) The photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain about 1 wt% glycerol. (Note 42) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.2 wt% to approximately 1 wt% sebacic acid. (Note 43) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.2 wt% sebaciac acid. (Note 44) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.5 wt% sebaciic acid. (Note 45) The photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 1 wt% sebaciic acid. (Note 46) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.005 wt% to approximately 1 wt% copper nitrate. (Note 47) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.01 wt% copper nitrate. (Note 48) A photoresist stripping agent solution according to any one of the appendices 1 to 3, wherein the one or more corrosion inhibitors contain approximately 0.2 wt% copper nitrate. (Note 49) A photoresist stripping agent solution according to any one of the appendices 1 to 3, comprising one or more of the aforementioned corrosion inhibitors in an amount of approximately 1 wt%. (Note 50) A photoresist stripping agent solution according to any one of the appendices 1 to 3, which does not contain an amide-containing solvent. (Note 51) A photoresist stripping agent solution according to any one of the appendices 1 to 3, which does not contain a sulfur-containing solvent. (Note 52) A photoresist stripping agent solution according to any one of the appendices 1 to 3, which does not contain dimethyl sulfoxide (DMSO). (Note 53) A photoresist stripping agent solution according to any one of the appendices 1 to 3, which does not contain n-methyl-2-pyrrolidone (NMP). (Note 54) A photoresist stripping agent solution according to any one of the appendices 1 to 3, which does not contain dimethyl sulfoxide (DMSO) and n-methyl-2-pyrrolidone (NMP). (Note 55) A photoresist stripping solution according to any one of the appendices 1 to 3, further comprising water or one or more alcohols containing one hydroxyl group. (Note 56) A photoresist stripping agent solution according to any one of the appendices 1 to 3, further comprising a secondary solvent containing water. (Note 57) Methanol, ethanol, propanol, isopropyl alcohol, butanol, tert-butyl alcohol, tert-amyl alcohol, 3-methyl-3-pentanol, 1-octanol, 1-decanol, 1-undecanol, 1-dodecanol, 1-tridecanol, 1-tetradecanol, 1-pentadecanol, 1-hexadecanol, 9-hexadecen-1-ol, 1-heptadecanol, 1-octadecanol, 1-nonadecanol, 1-e A photoresist stripping solution according to any one of the appendices 1 to 3, further comprising a secondary solvent containing an alcohol containing one hydroxyl group, selected from the group consisting of eicosanol, 1-heneicosanol, 1-docosanol, 13-docosen-1-ol, 1-tetracosanol, 1-hexacosanol, 1-heptacosanol, 1-octacosanol, 1-triacontanol, 1-dotriacontanol, 1-tetratriacontanol, and cetearyl alcohol. (Note 58) A photoresist stripping agent solution according to any one of the appendices 1 to 3, further comprising 1 wt% to approximately 15 wt% of a secondary solvent. (Note 59) A photoresist stripping solution according to any one of the appendices 1 to 3, comprising approximately 2.03 wt% KOH, approximately 12.75 wt% propylene glycol, approximately 69.5 wt% triethylene glycol monomethyl ether, approximately 15 wt% diethylene glycol, and approximately 0.5 wt% sorbitol. (Note 60) A method for removing a photoresist or similar material from a substrate, (i) A step of contacting the substrate with one or more photoresist stripping solutions described in any one of the appendices 1 to 59 for a time sufficient to remove a desired amount of the photoresist or similar material; (ii) A step of removing the substrate from the release agent solution; (iii) A step of rinsing off the release agent solution from the substrate using DI water or a solvent; (iv) Optionally, a step of drying the substrate. Methods that include...

Claims

1. (i) one or more undiluted inorganic bases in an amount of approximately 1.0 wt% to approximately 2.5 wt%; (ii) Two or more different organic solvents in an amount of about 90 wt% to about 97 wt%, comprising (a) a first solvent containing one or more glycol ether solvents, ether alcohol solvents, and aromatic ring-containing alcohol solvents, or a mixture thereof, and (b) a second solvent containing one or more polyol solvents; (iii) 0.25 wt% to 2 wt% of one or more corrosion inhibitors; and (iv) Optionally, one or more secondary solvents A photoresist stripping agent solution containing the above, wherein the sum of components (i), (ii), (iii), and (iv) is 100 wt% or less, and which does not contain amines.

2. The photoresist stripping agent solution according to claim 1, wherein the one or more undiluted inorganic bases contain about 1.75 wt% to about 2.25 wt% of undiluted KOH.

3. The photoresist stripping solution according to claim 1, wherein the one or more undiluted inorganic bases include one or more of sodium hydroxide, potassium hydroxide, lithium hydroxide, rubidium hydroxide, and cesium hydroxide.

4. The photoresist stripping solution according to claim 1, wherein the two or more organic solvents comprise (a) a first solvent comprising about 60 wt% to about 80 wt% of one or more ether alcohols, aromatic ring-containing alcohol solvents, or mixtures thereof, and (b) a second solvent comprising about 10 wt% to about 30 wt% of one or more polyol solvents, wherein the first solvent and the second solvent are different from each other.

5. The photoresist stripping solution according to claim 1, wherein the two or more organic solvents comprise (a) a first solvent containing about 60 wt% to about 80 wt% of triethylene glycol monomethyl ether (TEGME), and (b) a second solvent containing about 10 wt% to about 30 wt% of one or more of ethylene glycol (EG), diethylene glycol (DEG), triethylene glycol (TEG), glycerol, propylene glycol (PG), and mixtures thereof, wherein the first solvent and the second solvent are different from each other.

6. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors include one or more of BZT, sorbitol, resorcinol, sebaciac acid, glycerol, and copper(II) nitrate.

7. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors contain about 0.5 wt% to about 1 wt% of BZT.

8. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors comprise about 0.2 wt% to about 1 wt% of sorbitol.

9. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors contain about 0.2 wt% to about 1 wt% of resorcinol.

10. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors contain about 0.2 wt% to about 1 wt% glycerol.

11. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors contain about 0.2 wt% to about 1 wt% sebaciic acid.

12. The photoresist stripping agent solution according to claim 1, wherein the one or more corrosion inhibitors contain about 0.005 wt% to about 1 wt% copper nitrate.

13. A photoresist stripping agent solution according to claim 1, which does not contain an amide-containing solvent.

14. A photoresist stripping agent solution according to claim 1, which does not contain a sulfur-containing solvent.

15. A photoresist stripping agent solution according to claim 1, which does not contain dimethyl sulfoxide (DMSO).

16. A photoresist stripping agent solution according to claim 1, which does not contain n-methyl-2-pyrrolidone (NMP).

17. The photoresist stripping agent solution according to claim 1, which does not contain dimethyl sulfoxide (DMSO) and n-methyl-2-pyrrolidone (NMP).

18. The photoresist stripping agent solution according to claim 1, further comprising a secondary solvent containing water.

19. A photoresist stripping agent solution according to claim 1, comprising approximately 2.03 wt% or more of KOH, approximately 12.75 wt% of propylene glycol, approximately 69.5 wt% of triethylene glycol monomethyl ether, approximately 15 wt% of diethylene glycol, and approximately 0.5 wt% of sorbitol.

20. A method for removing a photoresist or similar material from a substrate, (i) A step of contacting the substrate with one or more of the photoresist stripping solutions according to claim 1 for a time sufficient to remove a desired amount of the photoresist or similar material; (ii) A step of removing the substrate from the photoresist stripping solution; (iii) A step of rinsing off the photoresist stripping agent solution from the substrate using DI water or a solvent; (iv) Optionally, a step of drying the substrate. Methods that include...

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