Solid-state quantum sensor module and sensor device

Abstract

The present disclosure provides a solid-state quantum sensor module comprising: a substrate that has a first main surface and a second main surface positioned on the opposite side from the first main surface; a solid-state element positioned on the first main surface side of the substrate and having a color center; a light guide plate positioned between the substrate and the solid-state element; a microwave field transmission antenna; a light source that is positioned on the first main surface side of the substrate and emits light containing a first wavelength in which the color center is excited from a ground state to an excited state; and a photodetector that is positioned on the first main surface side of the substrate and detects photoluminescence which contains a second wavelength and which is emitted from the solid-state element. The solid-state element overlaps with the microwave field transmission antenna when viewed along the normal direction of the first main surface of the substrate, and the photodetector does not overlap with the microwave field transmission antenna when viewed along the normal direction of the first main surface of the substrate.

Description

Technical Field

[0001] The present disclosure relates to a solid-state quantum sensor module and a sensor device.

Background Art

[0002] In the crystal structure of diamond, a composite defect (NV center (Nitrogen Vacancy center)) composed of a nitrogen atom that enters in a form replacing the position of a carbon atom in the crystal lattice and a vacancy existing at a position adjacent to the nitrogen atom is known. In addition to the NV center, the diamond crystal structure is also known to have composite defects called silicon-vacancy centers (SiV centers), tin-vacancy centers (SnV centers), etc. These composite defects including the NV center are called color centers.

[0003] When an electron is trapped in the NV center (hereinafter referred to as "NV - "), it forms a state called a spin triplet and behaves as a single spin. The single spin of NV - changes in response to an external magnetic field, and since the measurement of this spin state is also possible at room temperature, diamond containing the NV center can be used as a material for magnetic field sensor devices, electric field sensor devices, etc.

[0004] Patent Document 1 discloses a sensor including an element having a color center to be excited, a pair of predetermined color center excitation antennas provided sandwiching the element, and a feeder that supplies a frequency-variable high-frequency current to the pair of color center excitation antennas.

[0005] Further, Patent Document 2 discloses a magnetometer including a substrate, an electron spin defect layer including a plurality of lattice point defects arranged on the substrate, a microwave field transmitter, a light source, an optical resonator cavity arranged so as to recycle the light passing through the electron spin defect layer including at least a part of the electron spin defect layer, a photodetector that detects the photoluminescence emitted from the electron spin defect layer, and a magnet arranged adjacent to the electron spin defect layer. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2022-98572 [Patent Document 2] Special Publication No. 2022-550046 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] A sensor device using a solid-state element with a color center includes, for example, a diamond element with an NV center, a microwave field transmitting antenna, a light source emitting green light to excite the diamond element from its ground state to an excited state, and a photodetector for observing red fluorescence intensity. Conventional sensor devices often do not integrate the photodetector on the substrate, and miniaturization is required. On the other hand, integrating the photodetector on the substrate for miniaturization may result in adverse effects from noise from the microwave field transmitting antenna.

[0008] This disclosure has been made in view of the above circumstances, and its main purpose is to provide a solid-state quantum sensor module that can be miniaturized and that can reduce the influence of microwave noise on the photodetector. [Means for solving the problem]

[0009] One embodiment of the present disclosure provides a solid-state quantum sensor module comprising: a substrate having a first main surface and a second main surface located opposite the first main surface; a solid-state element having a color center located on the side of the substrate to the first main surface; a light guide plate located between the substrate and the solid-state element; a microwave field transmitting antenna; a light source located on the side of the substrate to the first main surface that emits light including a first wavelength that excites the color center from a ground state to an excited state; and a photodetector located on the side of the substrate to the first main surface that detects photoluminescence including a second wavelength emitted from the solid-state element, wherein the solid-state element overlaps with the microwave field transmitting antenna when viewed along the direction normal to the first main surface of the substrate, and the photodetector does not overlap with the microwave field transmitting antenna when viewed along the direction normal to the first main surface of the substrate.

[0010] Other embodiments of this disclosure provide a sensor device comprising the solid-state quantum sensor module described above. [Effects of the Invention]

[0011] This disclosure provides a solid-state quantum sensor module that enables miniaturization of the sensor device and reduces the influence of microwave noise on the photodetector. [Brief explanation of the drawing]

[0012] [Figure 1] These are schematic top view and schematic cross-sectional view showing an example of a solid-state quantum sensor module in the first embodiment of this disclosure. [Figure 2] This diagram schematically shows the structure of a diamond element with an NV center. [Figure 3] This is a diagram illustrating the principle of a diamond quantum sensor. [Figure 4] This is a photodetected magnetic resonance spectrum obtained with a diamond quantum sensor. [Figure 5] This is a schematic plan view illustrating a solid-state element in a first embodiment of the present disclosure. [Figure 6]This is a schematic plan view illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 7] These are schematic cross-sectional views and schematic top views of a solid element illustrating a solid quantum sensor module in the first embodiment of this disclosure. [Figure 8] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 9] These are schematic cross-sectional views and schematic top views of a solid element illustrating a solid quantum sensor module in the first embodiment of this disclosure. [Figure 10] This is a schematic top view illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 11] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 12] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 13] These diagrams illustrate a solid-state quantum sensor module according to a first embodiment of this disclosure, including schematic cross-sectional views, exploded views, and schematic top views of a light guide plate and substrate. [Figure 14] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a first embodiment of the present disclosure. [Figure 15] These are schematic top view, schematic cross-sectional view, and exploded cross-sectional view illustrating a solid-state quantum sensor module in a second embodiment of this disclosure. [Figure 16] These are schematic cross-sectional views and schematic top views of a solid element illustrating a solid quantum sensor module in a second embodiment of the present disclosure. [Figure 17] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a second embodiment of the present disclosure. [Figure 18] These are schematic cross-sectional views and schematic top views of a solid element illustrating a solid quantum sensor module in a second embodiment of the present disclosure. [Figure 19] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a second embodiment of the present disclosure. [Figure 20] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a second embodiment of the present disclosure. [Figure 21] These are schematic top view and schematic cross-sectional view showing an example of a sensor element structure used in the third embodiment of this disclosure. [Figure 22] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a third embodiment of the present disclosure. [Figure 23] This is a schematic cross-sectional view showing an example of a sensor element structure in a third embodiment of the present disclosure. [Figure 24] This is a schematic cross-sectional view showing an example of a sensor element structure in a third embodiment of the present disclosure. [Figure 25] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a third embodiment of the present disclosure. [Figure 26] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a third embodiment of the present disclosure. [Figure 27] These diagrams illustrate a solid-state quantum sensor module according to a third embodiment of this disclosure, including schematic cross-sectional views, exploded cross-sectional views, and schematic top views of a light guide plate and substrate. [Figure 28] These are schematic and exploded cross-sectional views illustrating a solid-state quantum sensor module in a third embodiment of this disclosure. [Figure 29] This is a schematic cross-sectional view illustrating a solid-state quantum sensor module in a third embodiment of the present disclosure. [Modes for carrying out the invention]

[0013] Embodiments of this disclosure will be described below with reference to drawings and other figures. However, this disclosure can be implemented in many different ways and should not be interpreted as being limited to the embodiments described below. In addition, in order to make the explanation clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part compared to the actual form, but these are merely examples and should not limit the interpretation of this disclosure. Furthermore, in this specification and each figure, elements similar to those described above with respect to previously shown figures will be denoted by the same reference numerals, and detailed explanations may be omitted as appropriate.

[0014] In this specification, when describing a configuration in which one component is placed on top of another component, unless otherwise specified, the terms "on top" or "below" include both cases: one where the other component is placed directly above or below the component in contact with it, and another where the other component is placed above or below the component via yet another component. Furthermore, when describing a configuration in this specification in which one component is placed on the surface of another component, unless otherwise specified, the terms "on the surface" or "on the surface" include both cases: one where the other component is placed directly above or below the component in contact with it, and another where the other component is placed above or below the component via yet another component.

[0015] A. Solid-state quantum sensor module The inventors of this application have found that it is possible to miniaturize a solid-state quantum sensor module by integrating the light source and photodetector on the first main surface side of the substrate.

[0016] Figure 1(a) is a schematic top view showing an example of a solid-state quantum sensor module according to the first embodiment of this disclosure, and Figure 1(b) is a schematic cross-sectional view AA of Figure 1(a). Note that the pattern shape of the microwave field transmitting antenna is omitted in Figure 1(b). Figure 15(a) is a schematic top view showing an example of a solid-state quantum sensor module according to the second embodiment of this disclosure, Figure 15(b) is a schematic cross-sectional view AA of Figure 15(a), and Figure 15(c) is an exploded cross-sectional view of Figure 15(b).

[0017] As shown in Figures 1(a), 1(b), and 15(a) to 15(c), the solid-state quantum sensor modules 1A and 1B of this disclosure can be miniaturized because the light source 5 and the photodetector 7 can be integrated on the first main surface S1 of the substrate 2. Furthermore, according to this disclosure, the normal direction D of the first main surface S1 of the substrate 2 N By including a light guide plate 6 located between the substrate 2 and the solid element 4, the light (excitation light) containing the first wavelength emitted from the light source 5 can be efficiently guided to the solid element 4. According to the solid quantum sensor module of this disclosure, the normal direction D of the first main surface S1 of the substrate 2 N When viewed along this line, the photodetector 7 does not overlap with the microwave field transmitting antenna 3, thereby reducing the influence of microwave noise on the photodetector 7. Furthermore, the solid element 4 is aligned with the normal direction D of the first main surface S1 of the substrate 2. N When viewed along this line, the position overlaps with the microwave field transmitting antenna 3, allowing microwaves to be efficiently irradiated from the microwave field transmitting antenna to the color center. Below, the normal direction D of the first main surface S1 of the substrate 2. N Simply the normal direction D N It is also said that.

[0018] The solid-state quantum sensor module of this disclosure will be described in detail below, divided into a first embodiment and a second embodiment depending on the position of the light source. Furthermore, a solid-state quantum sensor module using a sensor element structure having solid elements will be described as a third embodiment.

[0019] A-1. First Embodiment The solid-state quantum sensor module 1A of the first embodiment shown in Figures 1(a) and 1(b) comprises a substrate 2 having a first main surface S1 and a second main surface S2 located on the opposite side of the first main surface S1, a solid element 4 having a color center located on the side of the substrate 2 toward the first main surface S1, and a normal direction D NA light guide plate 6 positioned between the substrate 2 and the solid-state element 4, a microwave field transmission antenna 3, a light source 5 positioned on the first main surface S1 side of the substrate 2 that emits light including a first wavelength for exciting the color center from the ground state to the excited state, and a photodetector 7 positioned on the first main surface S1 side of the substrate 2 that detects the photoluminescence including a second wavelength emitted from the solid-state element 4. Further, the solid-state element 4 is located in a position overlapping the microwave field transmission antenna 3 when viewed along the normal direction D N of the first main surface S1 of the substrate 2. Also, the photodetector 7 is located in a position not overlapping the microwave field transmission antenna 3 when viewed along the normal direction D N of the first main surface S1 of the substrate 2. Furthermore, in the present embodiment, the light source 5 is located in a position not overlapping the microwave field transmission antenna 3 when viewed along the normal direction D N of the first main surface S1 of the substrate 2.

[0020] In the solid-state quantum sensor module 1A of the present embodiment, since the light source 5 is located in a position not overlapping the microwave field transmission antenna 3 when viewed along the normal direction D N noise of the microwave with respect to the light source 5 can be reduced, and it becomes a solid-state quantum sensor module capable of high-precision sensing.

[0021] In the solid-state quantum sensor module 1A of the present embodiment, the microwave field transmission antenna 3 preferably lies in a region overlapping the light guide plate 6 and is on the substrate 2 side rather than the light guide plate 6 when viewed along the normal direction D N of the first main surface S1 of the substrate 2. In this case, from the substrate 2 side, the microwave field transmission antenna 3, the light guide plate ⑥, and the solid-state element 4 are arranged in this order. By having such a stacked structure, light including the first wavelength can be introduced from the light guide plate 6 to the solid-state element 4 more efficiently. Further, since the microwave field transmission antenna 3 is installed adjacent to the substrate 2, the connection with the penetrating through electrode layer 14 becomes simple. Hereinafter, each component of the solid-state quantum sensor module of the present embodiment will be described in detail.

[0022] ​​ 1. Solid-state devices As shown in Figures 1(a) and 1(b), the solid element 4 having a color center in this embodiment is located on the side of the first main surface S1 of the substrate 2. Furthermore, the normal direction D of the first main surface S1 of the substrate 2 N When viewed along the normal direction D, the solid element 4 is located in a position that overlaps with the microwave field transmitting antenna 3. N When viewed along this line, the solid element 4 overlaps with the microwave field transmitting antenna 3. This refers to the direction D, which is the normal direction of the first main surface S1 of the substrate 2. N When viewed along the normal direction D, at least a portion of the solid element 4 overlaps with the microwave field transmitting antenna 3. Furthermore, the solid element 4 is aligned with the normal direction D. N In this configuration, the light guide plate 6 is located on the side opposite to the substrate 2. Furthermore, the solid element 4 is positioned in the normal direction D N In this configuration, it is preferable that the microwave field transmitting antenna 3 is located on the side opposite to the substrate 2.

[0023] As shown in Figures 1(a) and 1(b), the normal direction D N When viewed along this line, it is preferable that at least a portion of the solid element 4 is positioned to overlap with the light guide plate 6.

[0024] Solid-state devices with color centers are those in which electrons or holes are trapped in point defects within a solid ionic crystal. Examples of materials used for solid-state devices with color centers include diamond and silicon carbide (SiC), with diamond being preferred due to its excellent spin coherence properties at room temperature. Examples of color centers include diamond color centers and silicon carbide (SiC) color centers. Examples of diamond color centers include nitrogen-vacancy centers (NV centers) and silicon-vacancy centers, with NV centers being preferred.

[0025] The operating mechanism of a magnetic sensor using a diamond crystal as the solid element and an NV center as the color center is described in detail below. Figure 2 is a schematic diagram showing the structure of a diamond element with an NV center. As shown in Figure 2, an NV center is a composite impurity defect consisting of a nitrogen atom that has entered a carbon substitution position in the diamond lattice and a vacancy where an adjacent carbon atom has been removed. This NV center is in a neutral charge state NV 0 It captures one electron and becomes a -1 valent NV - Therefore, the magnetic quantum number m S This forms an electron spin triplet state with values ​​of -1, 0, and +1.

[0026] Figure 3 shows NV - This is a diagram illustrating the principle of a diamond quantum sensor that measures magnetic field strength, etc., using the principle of photodetection magnetic resonance, and is equipped with a diamond element having [specific characteristics]. When the diamond element is irradiated with green light GL (wavelength approximately 532 nm) without active microwave irradiation, m s Electrons excited from the =0 state emit red fluorescence RL at a longer wavelength (approximately 637 nm), thus returning to their original m s Relax to the state of =0 (path A).

[0027] On the other hand, when this crystal is irradiated with microwaves near 2.87 GHz, electron spin resonance causes electrons to move from a state of ms=0 to m s m can be excited to a state of ±1. s When the above green light is shone on the state of =±1, some electrons emit red fluorescence (pathway B), while some electrons undergo a non-radiative transition m s By relaxing to the =0 state (path C), it does not contribute to emission. Therefore, when electrons in the NV center are excited from an energy level where electron spin resonance occurs, the brightness of the red fluorescence RL decreases.

[0028] m s The state of =±1 is degenerate under no magnetic field, but in the presence of a magnetic field, it undergoes Zeeman splitting and splits into two levels. Taking advantage of this characteristic, electrons are m s m sBy sweeping microwaves that excite the system to a state of ±1, it becomes possible to accurately measure resonance levels using electron spin resonance (ESR). For example, NV - When a magnetic field is applied, a photodetection magnetic resonance spectrum is obtained in which there are two brightness reduction points of the red fluorescence RL, as shown in Figure 4(a). Influenced by the external magnetic field, m s When the ±1 range widens, the energy difference between the two peaks (here, the frequency difference Δf = f2 - f1) widens (Figure 4(b)). Thus, the frequency split Δf (=f2 - f1) of the microwave MW corresponding to the two brightness reduction points increases proportionally to the external magnetic field. Therefore, the external magnetic field can be measured from the red emission intensity.

[0029] Figures 5(a), 5(b), 5(c), and 5(d) are schematic plan views showing an example of a solid-state element in this embodiment, and also show the microwave field transmitting antenna 3. As shown in Figures 5(a), 5(b), and 5(c), the solid-state element 4 preferably has a light-emitting region 41 and a connection region 42 which is the region between the light-emitting region 41 and the photodetector. Also, as shown in Figure 5(d), the solid-state element 4 may have other regions 43 other than the light-emitting region 41 and the connection region 42. The light-emitting region 41 is in the normal direction D N This is the region that overlaps with the region of the microwave field transmitting antenna 3 when viewed along this line. The region of the microwave field transmitting antenna 3 refers to the region including the conductive pattern, for example, in the case of a loop antenna formed in a planar shape as described later.

[0030] The solid element of this embodiment may be flat, as shown in Figure 5(a). In this case, it is preferable that it is flat, extending in the direction D1 from the light source 5 toward the photodetector 7. Also, as shown in Figures 5(b), 5(c), and 5(d), it is preferable that the solid element 4 has one or more line patterns 4p extending in the direction D1 from the light source 5 toward the photodetector 7. In particular, it is preferable that the solid element 4 has multiple line patterns 4p. Hereinafter, the structure of each line pattern 4p of the solid element 4 in this embodiment will also be referred to as the first photonic cavity structure. In particular, it is preferable that the light-emitting region 41 of the solid element has the above first photonic cavity structure. By having such a first photonic cavity structure, photoluminescence including the second wavelength can be efficiently supplied to the photodetector due to the refractive index difference with air. Furthermore, the combination of the solid element 4 having the first photonic cavity structure and the light guide plate 6 allows light to be efficiently emitted and emitted in the horizontal direction, and in the normal direction D N When viewed along this line, the light source 5 and the photodetector 7 can be positioned at a distance from the microwave field transmitting antenna 3.

[0031] As shown in Figures 5(b), 5(c), and 5(d), the solid element 4 preferably has a pattern group C composed of a plurality of line patterns 4p.

[0032] Figures 6(a) and 6(b) are schematic plan views showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 6(a), the solid element 4 in this embodiment may have multiple pattern groups C. In this case, as shown in Figure 6(a), the solid element 4 may have multiple connection regions 42 that connect to each pattern group C, and the solid-state quantum sensor module 1A may have multiple photodetectors 7.

[0033] As shown in Figure 6(a), each pattern group C has multiple line patterns 4p, so if a defect occurs during the manufacturing process, it may be difficult to recover the photoluminescence. As shown in Figure 6(b), the solid element 4 in this embodiment may be divided into multiple independent pattern groups C by a bus cavity B. By having such a bus cavity B in the solid element 4, the loss of photoluminescence due to defects in the line patterns can be reduced.

[0034] The one or more line patterns (first photonic cavity structure) and bus cavities described above can be formed by conventionally known methods, for example, by etching a flat solid element (diamond).

[0035] Figure 7(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Figure 7(b) is a schematic top view of the solid element 4 in Figure 7(a). As shown in Figures 7(a) and 7(b), in this embodiment, it is preferable that each line pattern 4p of the solid element 4 has a photonic mirror structure. By having a photonic mirror structure, the intensity of photoluminescence including the second wavelength can be amplified, enabling highly sensitive sensing. A photonic mirror structure is not particularly limited as long as it is a structure that controls the transmission and reflection of light by periodically installing multiple dielectrics, etc., and can confine light and amplify it by causing resonance. Examples of such structures are disclosed in, for example, the Handbook of Quantum Interactions of Light and Matter (NTS Corporation) and Introduction to Photonic Crystals (Morikita Publishing Co., Ltd.).

[0036] As an example, specifically as shown in Figure 7(b), it is preferable to arrange a group of air gaps O1 consisting of n1 periodically located air gaps (n1 is an integer of 5 or more) on the light source 5 side of the solid element 4 (line pattern 4p) in the D1 direction, and to arrange a group of air gaps O2 consisting of n2 periodically located air gaps (n2 is an integer of 2 or more and less than n1) on the photodetector 7 side of the line pattern 4p of the solid element 4 in the D1 direction. By arranging the air gaps in this way, the air gap group O1 on the light source side and the air gap group O2 on the photodetector side reflect light containing a second wavelength, causing the light to resonate and be amplified at the space d between these air gap groups. Furthermore, by making the number of air gaps n2 in the air gap group on the photodetector side of the solid element smaller than the number of air gaps n1 in the air gap group on the light source side of the solid element, the air gap group on the photodetector side acts like a semi-transparent mirror, making it easier for light to propagate toward the photodetector. It is preferable that the air gap groups O1 and O2 are formed such that at least the space d between the air gap groups is located in the light-emitting region 41. The void group O1 and void group O2 may be formed in the light-emitting region 41. The void group O2 may be formed in the connection region 42. The void group O1 may be formed in a region other than the light-emitting region 41 and the connection region 42 (region 43 in Figure 5(d)).

[0037] The optical distance d between such gap groups is preferably, for example, n3 times (the second wavelength λ² / 2) (where n3 is an integer). This is because resonance of light containing the second wavelength is more likely to occur. Note that optical distance is the value obtained by multiplying the physical distance by the refractive index of the medium.

[0038] The distance between air gaps within the void group and the size of the gaps are appropriately set, within the optical distance of half the wavelength of the controlled light (second wavelength λ2 / 2), based on simulations and other methods using the controlled light wavelength (second wavelength λ2) and the physical properties of the photonic cavity material (i.e., solid element material), such as dielectric constant and transmittance.

[0039] One method for forming a void is to stack metal layers on a solid element (e.g., diamond), pattern the metal layers, and then use the resulting metal pattern as a mask to perform dry etching with an oxygen plasma or the like. The metal pattern stacked as a mask may be removed after void formation by wet etching or the like.

[0040] Figure 8 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 8, it is preferable that the end 4E on the photodetector side of the solid element 4 in this embodiment has curvature. Here, "the end on the photodetector side has curvature" means that the end 4E on the photodetector side is curved in a convex shape toward the photodetector in a direction perpendicular to the normal direction. This is because the light emitted from the solid element can be focused into light by a convex lens, making it easier to introduce light containing the second wavelength into the photodetector 7.

[0041] Figure 9(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Figure 9(b) is a schematic top view of the solid-state element in Figure 9(a). As shown in Figure 9, it is preferable that the solid-state element 4 in this embodiment has a plurality of color centers (NV in Figure 9) arranged at predetermined intervals along the direction D1 toward the photodetector. It is even more preferable that each line pattern 4p of the solid-state element 4 has a plurality of color centers (NV) arranged at predetermined intervals. By having a plurality of color centers arranged at predetermined intervals, it is possible to suppress destructive interference of light containing the second wavelength and amplify the amount of light emitted. The predetermined interval (optical distance) is preferably n4 times the second wavelength λ2. The above n4 is preferably 0.6 to 1.4, and more preferably 0.8 to 1.2. It is preferable that the plurality of color centers arranged at predetermined intervals are located in the light-emitting region 41. The plurality of color centers arranged at predetermined intervals may be located in the connection region 42. As shown in Figure 9, it is preferable that the multiple color centers, which are positioned side by side at predetermined intervals, are placed between the void group O1 and void group O2 described above.

[0042] Conventional methods can be used to arrange color centers at predetermined intervals. To artificially form NV centers in diamond, for example, vacancies are introduced into the diamond simultaneously with nitrogen atoms. One method for introducing nitrogen atoms is to use ion implantation after preparing the diamond. With ion implantation, improvements in ion beam focusing technology and ion quantity controllability allow nitrogen atoms to be introduced into the diamond at desired locations and in desired quantities. In ion implantation, ions accelerated to tens to thousands of kV are usually irradiated, so vacancies are introduced simultaneously with nitrogen. Alternatively, a method is used in which nitrogen is introduced during diamond synthesis, and the resulting nitrogen-doped diamond is then irradiated with a controlled electron beam.

[0043] In this embodiment, the thickness of the solid element is not particularly limited and may be 50 nm or more, 100 nm or more, or 150 nm or more. On the other hand, the above thickness may be, for example, 1000 μm or less, 100 μm or less, or 1 μm or less.

[0044] 2. Microwave field transmitting antenna The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to provide a microwave field to the solid element. As shown in Figure 1(b), the normal direction D N When viewed along this line, the microwave field transmitting antenna 3 is positioned to overlap with at least a portion of the solid element 4. Furthermore, the microwave field transmitting antenna 3 is positioned in the normal direction D NIn this embodiment, it is preferable that the solid element 4 is located on the substrate 2 side. In this embodiment, the microwave field transmitting antenna 3 may be located on the surface of the substrate 2, located within the substrate 2, or located between the substrate 2 and the light guide plate 6. The microwave field transmitting antenna 3 includes, for example, a metal layer. The material of the metal layer is not particularly limited as long as it has excellent conductivity, and may be an alloy in addition to metals such as gold, silver, copper, iron, nickel, and chromium. The metal layer may have a pattern shape. Examples of the shape of the metal layer of the microwave field transmitting antenna 3 in this embodiment include a loop shape, a patch shape called a microstrip antenna, a stripe shape, etc. Furthermore, a transparent antenna, which will be detailed in the second embodiment, can also be used as the microwave field transmitting antenna in this embodiment.

[0045] In this embodiment, it is preferable to have a metal layer shape that transmits microwaves mainly in a vertical direction so that the photodetector and light source are not directly exposed to microwaves. Examples of such shapes include loop antennas and microstrip antennas formed in a planar shape.

[0046] The solid-state quantum sensor module in this embodiment may include a microwave field control circuit that supplies a microwave source signal to a microwave field transmitting antenna. The microwave field control circuit may be electrically connected to the microwave field transmitting antenna. The microwave frequency of the microwave source signal is, for example, about 2 GHz or more and about 4 GHz or less.

[0047] 3.Light source The solid-state quantum sensor module in this embodiment includes a light source located on the first main surface side of the substrate, which emits light containing a first wavelength that excites the color center in the solid element from the ground state to an excited state. As shown in Figures 1(a) and 1(b), in this embodiment, the light source 5 is positioned to emit light containing the first wavelength in the in-plane direction of the light guide plate 6, and in the normal direction D N When viewed along this line, it is positioned so as not to overlap with the microwave field transmitting antenna 3.

[0048] The light emitted from the light source includes a first wavelength that excites one or more color centers in the solid element from the ground state to an excited state. The first wavelength is different from the second wavelength emitted by the color centers, which will be described later. The first wavelength may be, for example, about 532 nm to excite the color centers in the solid element.

[0049] Examples of light sources include light-emitting diodes and lasers.

[0050] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate located between the substrate and the solid element, which guides light containing a first wavelength emitted from the light source to the solid element. In this embodiment, the light guide plate may be an optical waveguide that propagates light in the planar direction of the light guide plate, or it may be a diffuser plate that diffuses light in the vertical direction.

[0051] (1) Optical waveguide As shown in Figures 1(a) and 1(b), in this embodiment, the light guide plate 6 is preferably an optical waveguide 60 having a core layer 61 and a cladding layer 62 with a refractive index different from that of the core layer 61. The cladding layer may have a first cladding layer having a recess for the core layer and a second cladding layer that seals the core layer located in the recess of the first cladding layer. The refractive index of the cladding layer is preferably lower than that of the core layer, and light entering the core layer propagates while undergoing total internal reflection inward at the boundary with the cladding layer.

[0052] Preferably, both the core layer and the cladding layer contain cured products of a curable resin composition that hardens with heat or light. Examples of cured products of curable resin compositions include cured products of ionizing radiation-curable resin compositions and cured products of thermosetting resin compositions. Examples of ionizing radiation-curable resin compositions include ultraviolet-curable resin compositions and electron beam-curable resin compositions. Examples of materials for ultraviolet-curable resin compositions include polymerizable oligomers or monomers having acryloyl groups such as urethane acrylate, oligoester acrylate, trimethylolpropane triacrylate, neopentyl glycol diacrylate, epoxy acrylate, polyester acrylate, polyether acrylate, and melamine acrylate, or formulations of these oligomers or monomers with monofunctional or polyfunctional monomers containing polymerizable vinyl groups such as acrylic acid, acrylamide, acrylonitrile, and styrene, to which a photopolymerization initiator, sensitizer, or desired additive is added.

[0053] The optical waveguide may include a resin substrate that supports the core layer and cladding layer. The resin substrate film can be made of, for example, polyethylene terephthalate (PET) or polycarbonate (PC). While the resin substrate is necessary during the manufacturing process of the optical waveguide, it may be removed before actual use.

[0054] Figure 10 is a schematic top view of the solid-state quantum sensor module in this embodiment. In Figure 10, the solid-state element 4 is omitted. As shown in Figure 10, the core layer 61 preferably has a branched structure in which it has one linear main core portion 61a and branches into two or more branched core portions (61b, 61c, 61d, 61e, 61f) at a branching point along the way. The branched core portions are arranged at predetermined intervals, and the cladding layer 62 preferably encloses the five arranged branched core portions together.

[0055] It is preferable that the optical waveguide has the branched core portion in a region that overlaps with the light-emitting region of the solid element described above. This is because it allows for efficient introduction of light of the first wavelength into the solid element.

[0056] (2) Diffuser The diffuser plate is not particularly limited as long as it is a material commonly used as a diffuser plate, but for example, one made from styrene methacrylate copolymer, methyl styrene methacrylate copolymer, acrylonitrile styrene copolymer, polycarbonate (PC), polyethylene terephthalate (PET), polystyrene, etc. can be used.

[0057] Furthermore, the diffuser plate used in the present invention may contain particles. Examples include inorganic particles such as silica and alumina, acrylic resin, styrene resin, fluororesin particles such as polytetrafluoroethylene and polyfluorovinylidene, and silicone resin particles. These particles may be used individually or in combination of two or more. From the viewpoint of scattering properties, the average particle size is preferably in the range of 0.8 μm to 10 μm. The particle content may be adjusted as appropriate.

[0058] (3) Others The light guide plate in this embodiment may have both the function of an optical waveguide and the function of a diffuser plate. For example, in the normal direction D N When viewed along this line, light containing the first wavelength propagates from the light source to the light source side end of the light-emitting region of the solid element via the optical waveguide, and by using a diffuser plate in the region overlapping with the light-emitting region, it becomes easier to introduce light to the solid element located above.

[0059] 5. Photodetector The solid-state quantum sensor module in this embodiment includes a photodetector located on the first main surface side of the substrate, which detects photoluminescence including a second wavelength emitted from the solid element. The photoluminescence may include one or more wavelengths of light corresponding to the emission wavelength of the color center (for example, a wavelength of about 637 nm) as the second wavelength.

[0060] As shown in Figure 1(b), it is preferable that the photodetector 7 is positioned so that its detection surface faces the end portion 4E of the solid element 4. Alternatively, the photodetector 7 and the solid element 4 may be in direct contact.

[0061] 6. Circuit board The solid-state quantum sensor module in this embodiment includes a substrate. The substrate is a component that supports the aforementioned components such as the light source, photodetector, solid element, light guide plate, and microwave field transmitting antenna.

[0062] The substrate material may be, for example, an organic material, an inorganic material, or a composite material containing both organic and inorganic materials. In this embodiment, it is preferable that the substrate is made of a material containing an inorganic material, and it is particularly preferable that it is made of an inorganic material.

[0063] As for the substrate material, for example, in the case of an inorganic material substrate, examples include substrates made of inorganic materials such as glass substrates, ceramic substrates, resin substrates, silicon substrates, quartz substrates, and sapphire substrates. In this embodiment, the substrate is preferably a glass substrate or a silicon substrate. When the substrate is a glass substrate, examples of the glass used include soda-lime glass, alkali-free glass, and quartz glass. When the substrate is a resin substrate, examples of the resin used include polyimide. When the substrate is a composite material substrate, examples include a glass epoxy substrate.

[0064] As shown in Figure 1(b), the substrate 2 is in the normal direction D N The substrate may have through holes that penetrate through to the substrate. A through electrode layer 14 is arranged on the inner wall of the through hole. Furthermore, a conductive layer 15 may be provided on the second main surface S2 side of the substrate 2. For example, the conductive layer 15 of the substrate 2 may be electrically connected to the light source 5, the photodetector 7 and the microwave field transmitting antenna 3 by a through electrode layer 14 formed in the through hole of the substrate 2.

[0065] The materials for the through-electrode layer and the conductive layer are not particularly limited as long as they are conductive materials, but examples include elemental metals, alloys, and metallic compounds. Examples of metallic elements contained in the metallic material include chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, arsenic, ruthenium, rhodium, palladium, silver, cadmium, indium, tin, antimony, osmium, iridium, platinum, gold, mercury, thallium, lead, bismuth, molybdenum, titanium, tungsten, tantalum, and aluminum. Among these, elemental metals such as copper, gold, silver, platinum, rhodium, tin, aluminum, nickel, and chromium, or alloys containing at least one of these metallic elements, are preferred.

[0066] 7. Other (1) Reflective layer Figures 11(a) and 11(b) are schematic cross-sectional views showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 11(a), the solid-state quantum sensor module 1A in this embodiment preferably includes a first reflective layer 8a that reflects light containing the first wavelength on the side of the solid element 4 opposite to the side facing the light guide plate 6. Furthermore, it is preferable to include a second reflective layer 8b that reflects light containing the first wavelength on the side of the microwave field transmitting antenna 3 opposite to the side facing the light guide plate 6. In particular, if the light guide plate 6 is the diffuser plate described above, it is preferable to arrange the first reflective layer 8a and the second reflective layer 8b. If the substrate 2 is a glass substrate, the second reflective layer 8b may be located on the second main surface S2 side of the substrate 2, as shown in Figure 11(b). By arranging such reflective layers, it is possible to suppress the leakage of light containing the first wavelength without it being introduced into the solid element.

[0067] The reflective layer is not particularly limited as long as it is a layer that reflects light containing the first wavelength, but examples include metal vapor-deposited films. The thickness of the reflective layer is not particularly limited as long as it is a thickness that yields the desired reflectivity for light containing the first wavelength, and can be set as appropriate.

[0068] (2) First wavelength selective filter and second optical wavelength selective filter Figure 12 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 12, the solid-state quantum sensor module 1A of this embodiment preferably includes a first wavelength selective filter 9a within the light guide plate 6 that selectively transmits light including a first wavelength. This suppresses light of undesirable wavelengths other than light including the first wavelength, thereby improving the efficiency and sensitivity of sensing. The first wavelength selective filter may be located between the light guide plate 6 and the light source 5.

[0069] As shown in Figure 12, the solid-state quantum sensor module 1A of this embodiment preferably includes a second optical wavelength selective filter 9b within the solid element 4 that selectively transmits light including a second wavelength. This suppresses light of undesirable wavelengths other than the second wavelength, thereby improving the efficiency and sensitivity of sensing. The second optical wavelength selective filter may be located between the solid element 4 and the photodetector 7.

[0070] The first wavelength selective filter and the second wavelength selective filter are not particularly limited as long as they selectively transmit light containing a first wavelength and light containing a second wavelength, respectively, and known filters can be used. For example, the first wavelength selective filter is configured to transmit light containing a first wavelength (e.g., green light) and reflect light other than light containing a first wavelength, and the second wavelength selective filter is configured to transmit light containing a second wavelength (e.g., red light) and reflect light other than light containing a second wavelength. The first wavelength selective filter and the second wavelength selective filter have, for example, a multilayer film. Selective transmission means that the transmittance of light in a specific wavelength range including the target wavelength is higher than the transmittance of light outside the specific wavelength range. The first wavelength selective filter preferably has a transmittance of 70% or more in the wavelength band of the first wavelength ± 50 nm, and more preferably 80% or more. The second wavelength selective filter preferably has a transmittance of 70% or more in the wavelength band of the second wavelength ± 50 nm, and more preferably 80% or more.

[0071] (3) Shielding part In this embodiment, the solid-state quantum sensor module preferably has a shielding portion that shields microwaves emitted from the microwave field transmitting antenna. The shielding portion is preferably positioned to surround the microwave field transmitting antenna. The shielding portion is preferably located in at least one of the substrate and the light guide plate. By having a shielding portion, it is possible to suppress the direct exposure of electronic components such as photodetectors and light sources to noise from microwaves emitted from the microwave field transmitting antenna.

[0072] The shielding portion is made of, for example, a metal material. Any material capable of shielding microwaves can be used as the metal material; for example, aluminum, chromium, copper, silver, titanium, gold, and other metal materials can be used.

[0073] Figure 13(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Figure 13(b) is an exploded view of the solid-state quantum sensor module shown in Figure 13(a). Figure 13(c) is a top view of the light guide plate 6 shown in Figure 13(b), and Figure 13(d) shows the substrate 2 and antenna 3 shown in Figure 13(b) in the normal direction D N This is a top view as seen along the line.

[0074] The solid-state quantum sensor module shown in Figures 13(a) to 13(d) has a first shielding portion 10a within the substrate 2 and a second shielding portion 10b within the light guide plate 6. By having shielding portions both within the substrate and the light guide plate in this way, the shielding effect can be improved.

[0075] (4) Photonic wire bonding Figure 14(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 14(a), in this embodiment, the photodetector 7 and the solid element 4 may be connected by a polymer waveguide 11 (photonic wire bond, PWB). The shape of the polymer waveguide is preferable because it can be manufactured by a 3D printer or the like to match the actual position of the components, thus eliminating the need for high-precision alignment of the connected optical components. Conventionally known materials can be used as the material for the polymer waveguide.

[0076] (5) Light-blocking wall Figure 14(b) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 14(b), the solid-state quantum sensor module 1A preferably includes a light-shielding wall 12 that blocks light from the outside. By including a light-shielding wall, highly sensitive sensing becomes possible. The material of the light-shielding wall is preferably a non-magnetic material that has light-shielding properties. A non-magnetic material is a material that is difficult to magnetize. Examples of such materials include metallic materials such as aluminum, copper, and stainless steel, as well as carbon and chromium oxide.

[0077] (6) Reference photodetector In this embodiment, the solid-state quantum sensor module preferably includes a reference photodetector for detecting light containing a first wavelength. By including a reference photodetector, it becomes possible to measure while controlling the intensity of light containing the first wavelength from the light source to a constant level, thereby enabling high-precision sensing.

[0078] (7) Heater element As shown in Figure 14(b), the solid-state quantum sensor module 1A in this embodiment preferably includes a heater element 13 in a position surrounded by the light-shielding wall 12 and the substrate 2. The heater element 13 is preferably located on the first main surface side of the substrate 2. By controlling the temperature environment inside the light-shielding wall 12 to a constant level with the heater element 13, shifts in the photodetection magnetic resonance spectrum due to the temperature environment can be suppressed, enabling highly accurate sensing.

[0079] (8) Permanent magnets The solid-state quantum sensor module in this embodiment may include a permanent magnet. The permanent magnet may be located adjacent to the solid element. The permanent magnet induces the Zeeman effect, m s It is designed to release the degeneracy of the ±1 spin sub-levels.

[0080] (9) Other components The solid-state quantum sensor module in this embodiment may have various electronic components such as integrated circuits (ICs) including amplifiers and A / D converters.

[0081] A-2. Second Embodiment The solid-state quantum sensor module 1B of the second embodiment shown in Figures 15(a), 15(b), and 15(c) comprises a substrate 2 having a first main surface S1 and a second main surface S2 located on the opposite side of the first main surface S1, a solid-state element 4 having a color center located on the side of the substrate 2 toward the first main surface S1, and a normal direction D N The solid element 4 comprises a light guide plate 6 located between the substrate 2 and the solid element 4, a microwave field transmitting antenna 3, a light source 5 located on the first main surface S1 side of the substrate and emitting light including a first wavelength that excites the color center from the ground state to an excited state, and a photodetector 7 located on the first main surface S1 side of the substrate and detecting photoluminescence including a second wavelength emitted from the solid element 4. The solid element 4 is located in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it overlaps with the microwave field transmitting antenna 3. Furthermore, the photodetector 7 is aligned in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it is located in a position that does not overlap with the microwave field transmitting antenna 3. Furthermore, in this embodiment, the microwave field transmitting antenna 3 is a transparent antenna capable of transmitting light including the first wavelength, and the light source 5 is in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it overlaps with the microwave field transmitting antenna 3, and in the region where the light source 5 and the microwave field transmitting antenna 3 overlap, the normal direction D NIn this configuration, the light guide plate 6 is positioned between the light source 5 and the microwave field transmitting antenna 3.

[0082] According to this embodiment, since the light source, light guide plate, and microwave field transmitting antenna are stacked, the solid-state quantum sensor module can be further miniaturized. Furthermore, because the light emitted from the light source propagates in the thickness direction, the light from the light source can be efficiently introduced into the solid element.

[0083] Furthermore, in the region where the light source 5 and the microwave field transmitting antenna 3 overlap, it is preferable that the solid-state quantum sensor module 1B of the second embodiment has the light source 5, light guide plate 6, microwave field transmitting antenna 3, and solid element 4 in this order from the substrate 2 side. This allows microwaves to be irradiated to the color center more efficiently from the microwave field transmitting antenna. The various components of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0084] 1. Solid-state devices As shown in Figures 15(a), 15(b), and 15(c), the solid element 4 in this embodiment is located on the first main surface S1 side of the substrate 2 and on the side of the light guide plate 6 opposite to the substrate 2 side. Furthermore, the solid element 4 is located in the normal direction D N In this configuration, it is preferable that the microwave field transmitting antenna 3 is located on the side opposite to the side facing the substrate 2. Furthermore, the solid element 4 is located in the normal direction D N In this configuration, the light source 5 is located on the side opposite to the side facing the substrate 2. The solid-state quantum sensor module 1B of this embodiment is located in the normal direction D N In the region where the light source 5 and the microwave field transmitting antenna 3 overlap when viewed from this direction, the substrate 2, light source 5, light guide plate 6, microwave field transmitting antenna 3 and solid element 4 are aligned in the normal direction D N It is preferable to have them in this order.

[0085] The material, shape, and other characteristics of the solid element in this embodiment can be the same as those of the solid element in the first embodiment.

[0086] For example, as shown in Figures 16(a) and 16(b), in this embodiment, it is preferable that each line pattern 4p of the solid element 4 has a photonic mirror structure.

[0087] As shown in Figure 17, in this embodiment, it is preferable that the end portion 4E on the photodetector side of the solid element 4 has curvature.

[0088] As shown in Figures 18(a) and 18(b), it is preferable that the solid element 4 in this embodiment has a plurality of color centers (NV in Figure 18) that are arranged at predetermined intervals along the direction D1 toward the photodetector. It is even more preferable that each line pattern 4p of the solid element 4 has a plurality of color centers (NV in Figure 18) that are arranged at predetermined intervals along the direction D1 toward the photodetector.

[0089] 2. Microwave field transmitting antenna The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to provide a microwave field to the solid element. As shown in Figure 15, the microwave field transmitting antenna 3 in this embodiment is directed in the normal direction D N In this configuration, it is preferable that the microwave field transmitting antenna 3 is located on the substrate 2 side of the solid element 4. In this embodiment, the microwave field transmitting antenna 3 may be located between the light source 5 and the solid element 4.

[0090] In this embodiment, the microwave field transmitting antenna is preferably a transparent antenna capable of transmitting light including a first wavelength. Such a transparent antenna, for example, has a transparent substrate and a metal layer made of metal nanowires. This results in an antenna that has both a light-opaque conductive part and a light-transmitting window made of metal nanowires. The material of the metal nanowires is not particularly limited as long as it has excellent conductivity, and may be metals such as gold, silver, copper, iron, nickel, and chromium, as well as alloys.

[0091] There are no particular restrictions on the pattern shape of the metal layer of the transparent antenna; for example, it may be striped, mesh-like, or a random network pattern, but the aperture ratio is preferably 80% or more from the viewpoint of transparency. The aperture ratio is the ratio of the area of ​​the light-transmitting window to the total area (the sum of the area of ​​the light-opaque conductive part made of metal nanowires and the light-transmitting window part).

[0092] The solid-state quantum sensor module in this embodiment may include a microwave field control circuit. The microwave field control circuit is the same as in the first embodiment.

[0093] 3.Light source The solid-state quantum sensor module in this embodiment includes a light source that emits light containing a first wavelength that excites the color center in the solid element 4 from the ground state to an excited state. As shown in Figure 15, in this embodiment, the light source 5 is positioned so as to emit light containing the first wavelength toward the light guide plate 6, and is positioned opposite the microwave field transmitting antenna 3 across the light guide plate 6. That is, in the normal direction D N In this configuration, the light guide plate 6 is positioned between the light source 5 and the microwave field transmitting antenna 3. Other features of the light source are the same as those of the first embodiment.

[0094] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate that guides light containing a first wavelength emitted from a light source to a solid element. In this embodiment, the light guide plate is preferably a diffuser plate because it is required to guide light to a solid element located above it. Also in this embodiment, as shown in Figure 15(c), the light guide plate 6 may have a recess in which the light source 5 can be placed. Other features of the diffuser plate are the same as those described in the first embodiment.

[0095] 5. Photodetector The solid-state quantum sensor module in this embodiment includes a photodetector located on the first main surface side of the substrate, which detects photoluminescence including a second wavelength emitted from the solid-state element. Other features of the photodetector are the same as those in the first embodiment.

[0096] 6. Circuit board The solid-state quantum sensor module in this embodiment includes a substrate. The substrate is a component that supports the components such as the light source, photodetector, solid element, light guide plate, and microwave field transmitting antenna described above. The substrate is the same as the substrate described in the first embodiment.

[0097] 7. Other (1) Reflective layer Figure 19 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 19, the solid-state quantum sensor module 1B of this embodiment preferably includes a first reflective layer 8a on the side of the solid element 4 opposite to the side facing the light guide plate 6, which reflects light containing a first wavelength. By arranging such a reflective layer, leakage of light containing the first wavelength from the solid element can be suppressed. Other features of the reflective layer are the same as those described in the first embodiment.

[0098] (2) Second wavelength selective filter As shown in Figure 19, the solid-state quantum sensor module 1B of this embodiment preferably includes a second optical wavelength selective filter 9b within the solid-state element 4 that selectively transmits light including a second wavelength. The second optical wavelength selective filter 9b may be located between the solid-state element 4 and the photodetector 7.

[0099] The second wavelength selective filter described above is not particularly limited as long as it selectively transmits light including the second wavelength, and the same type as the second wavelength selective filter described in the first embodiment can be used.

[0100] (3) Photonic wire bonding Figure 20(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 20(a), in this embodiment, the photodetector 7 and the solid-state element 4 may be connected by a polymer waveguide 11 (photonic wire bond, PWB). The same polymer waveguide as in the first embodiment can be used.

[0101] (4) Light-shielding wall and heater element Figure 20(b) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 20(b), the solid-state quantum sensor module 1B preferably includes a light-shielding wall 12 that blocks light from the outside. As shown in Figure 20(b), the solid-state quantum sensor module 1B in this embodiment preferably includes a heater element 13 in a position surrounded by the light-shielding wall 12 and the substrate 2. The same light-shielding wall and heater element as in the first embodiment can be used.

[0102] (5) Others The solid-state quantum sensor module in this embodiment may have other components such as a reference photodetector and a permanent magnet. The same reference photodetector and permanent magnet as in the first embodiment can be used.

[0103] A-3. Third Embodiment The solid-state quantum sensor module in this embodiment is configured to include a sensor element structure having a solid-state element, instead of the solid-state elements of the first and second embodiments described above.

[0104] Figure 21(a) is a schematic top view showing an example of a sensor element structure in this embodiment, and Figure 21(b) is a schematic cross-sectional view of AA in Figure 21(a). As shown in Figures 21(a) and 21(b), the sensor element structure 50 comprises a first optical functional layer 52, a solid element 53 having a color center, and a second optical functional layer 54, with the thickness direction D TIn this order, the sensor element structure 50 is arranged such that the first optical functional layer 52 faces the substrate 2 side. Thickness direction D of the sensor element structure 50 T This is typically the normal direction D of the first main surface S1 of the substrate 2. N This matches.

[0105] The solid element 53 is excited from the ground state to an excited state by excitation light containing light of a first wavelength, and emits photoluminescence containing light of a second wavelength. The first optical functional layer 52 reflects the light of the second wavelength emitted from the solid element 53, and the second optical functional layer 54 transmits and reflects the light of the second wavelength. Furthermore, in this disclosure, the solid element 53 has a thickness in the D T It has multiple element portions 53p that are isolated from each other by grooves X extending in a certain direction. Hereinafter, the structure of each element portion 53p of the solid element 53 in this embodiment will also be referred to as the second photonic cavity structure.

[0106] With the sensor element structure of this disclosure, the solid element has a predetermined second photonic cavity structure, which allows photoluminescence, including light of a second wavelength emitted from the solid element, to efficiently proceed to the second optical functional layer. Furthermore, by positioning the solid element between a first optical functional layer that reflects light of a second wavelength and a second optical functional layer that transmits and reflects light of a second wavelength, the second wavelength light can be resonated and amplified between the first and second optical functional layers, and can also be easily emitted from the second optical functional layer. Therefore, the sensor element structure can improve the intensity of the emitted photoluminescence.

[0107] Therefore, the solid-state quantum sensor module of this disclosure, by comprising the sensor element structure described above, becomes a solid-state quantum sensor module capable of highly sensitive sensing. Hereinafter, an embodiment of the solid-state quantum sensor module of the first embodiment described above, in which the sensor element structure described above is used instead of a solid element, will be described in detail as the first embodiment, and an embodiment of the solid-state quantum sensor module of the second embodiment described above, in which the sensor element structure described above is used instead of a solid element, will be described in detail as the second embodiment.

[0108] A-3-1. First aspect Figure 22 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module of the first embodiment in the third embodiment of this disclosure. Note that in Figure 22 and the schematic cross-sectional view of the solid-state quantum sensor module described later, the groove X of the sensor element structure 50 is omitted. The solid-state quantum sensor module 1C of this disclosure comprises a substrate 2 having a first main surface S1 and a second main surface S2 located on the opposite side of the first main surface S1; a sensor element structure 50 including a solid element 53 located on the first main surface S1 side of the substrate 2; a light guide plate 6 located between the substrate 2 and the sensor element structure 50; a microwave field transmitting antenna 3; a light source 5 located on the first main surface S1 side of the substrate 2 that emits excitation light including a first wavelength that excites the color center in the solid element 53 from the ground state to an excited state toward the light guide plate 6; and a photodetector 7 located on the first main surface S1 side of the substrate 2 that detects photoluminescence including light of a second wavelength.

[0109] Furthermore, similar to the first embodiment, the solid element 53 is oriented in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it overlaps with the microwave field transmitting antenna 3. Furthermore, the photodetector 7 is aligned in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, the light source 5 is located in a position that does not overlap with the microwave field transmitting antenna 3. Furthermore, in this embodiment, the light source 5 is located in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it is located in a position that does not overlap with the microwave field transmitting antenna 3 mentioned above.

[0110] The configurations of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0111] 1. Sensor element structure As shown in Figure 22, in the solid-state quantum sensor module 1C of this embodiment, the sensor element structure 50 is arranged such that the first optical functional layer 52 faces the substrate 2. The sensor element structure 50 is located on the first main surface S1 side of the substrate 2 and on the side opposite to the substrate 2 side of the light guide plate 6. The sensor element structure 50 is also located in the normal direction D N In this case, it is preferable that the microwave field transmitting antenna 3 is located on the side opposite to the side facing the substrate 2. As shown in Figure 22, the normal direction D N When viewed along the normal direction D, it is preferable that at least a portion of the sensor element structure 50 is positioned to overlap with the light guide plate 6. N When viewed in this manner, the sensor element structure 50 may have at least one solid element 53 that overlaps with the microwave field transmitting antenna 3, and may also be in a position where all elements overlap.

[0112] (1) Solid element The type of solid-state element is the same as that of the first embodiment described above, so its explanation is omitted here.

[0113] In this disclosure, the solid element 53 has a thickness direction D T In this configuration, by being positioned between the first optical functional layer 52 and the second optical functional layer 54, light can be resonated and amplified between the first optical functional layer and the second optical functional layer.

[0114] The thickness T0 (optical distance) of such a solid element is preferably, for example, n1 times (the second wavelength λ² / 2) (where n1 is an integer). The optical distance is the value obtained by multiplying the physical distance by the refractive index of the medium. This is because resonance of light of the second wavelength is likely to occur. n1 is 1 or greater and is appropriately set by simulation or the like based on the physical properties of the second photonic cavity material (i.e., the material of the solid element), such as the dielectric constant and transmittance.

[0115] In this disclosure, the solid element has a thickness direction D T It has multiple element portions 53p that are isolated from each other by grooves X extending in a certain direction. By having such multiple element portions 53p, photoluminescence including light of a second wavelength can be efficiently propagated toward the second optical functional layer due to the refractive index difference with the grooves X (air).

[0116] In this disclosure, the shape and position of the grooves are not particularly limited, as long as it is possible to isolate the solid element into multiple element sections. As shown in Figure 21(b), the grooves X may be formed, for example, from the surface on the second optical functional layer 54 side to the interface between the solid element 53 and the first optical functional layer 52. On the other hand, grooves X may also be formed in the first optical functional layer. As shown in Figure 21(a), in plan view, the grooves X are preferably lattice-shaped.

[0117] The planar shape of the element portion 53p is not particularly limited, but examples include rectangular, polygonal, and circular shapes. The size of the element portion in plan view is, for example, 50 nm or more, and preferably 100 nm or more. On the other hand, the size of the element portion is, for example, 100 μm or less, and preferably 10 μm or less. The size of the element portion refers to the longest length of the element portion, which corresponds to W in the case of Figure 21(a).

[0118] Figure 23 is a schematic cross-sectional view showing an example of the sensor element structure of this disclosure. As shown in Figure 23, the element portion 53p is in the thickness direction D T Direction D perpendicular to the L It extends in the thickness direction D T It is preferable to have multiple color center layers (NV in Figure 23) positioned side by side with a predetermined interval T1 along the line.

[0119] By having multiple color center layers positioned at predetermined intervals, it is possible to suppress destructive interference of light of the second wavelength and amplify the amount of light emitted. The predetermined interval T1 (optical distance) is preferably n2 times the second wavelength λ2 (where n2 is a positive number). The value of n2 is preferably 0.6 or more and 1.4 or less, and more preferably 0.8 or more and 1.2 or less.

[0120] The number of color center layers included in each element section 53p may be, for example, two or more, five or more, or ten or more. On the other hand, it may be, for example, 1000 or less, 500 or less, or 100 or less.

[0121] Conventional methods can be used to arrange color centers at predetermined intervals. To artificially form NV centers in diamond, for example, vacancies are introduced into the diamond simultaneously with nitrogen atoms. One method for introducing nitrogen atoms is to use ion implantation after preparing the diamond. With ion implantation, improvements in ion beam focusing technology and ion quantity controllability allow nitrogen atoms to be introduced into the diamond in the desired arrangement and quantity. In ion implantation, ions accelerated to tens to thousands of kV are usually irradiated, so vacancies are introduced simultaneously with nitrogen. Alternatively, a method is used in which nitrogen is introduced during diamond synthesis, and the resulting nitrogen-doped diamond is then irradiated with a controlled electron beam.

[0122] (2) First optical functional layer In this embodiment, the first optical functional layer is a layer that reflects light of a second wavelength. Furthermore, it is preferable that the first optical functional layer transmits light of a first wavelength that excites the color center in the solid element from the ground state to the excited state.

[0123] The first optical functional layer preferably has a reflectance of 70% or more, and more preferably 90% or more, for light of the second wavelength. On the other hand, the reflectance of light of the second wavelength may be, for example, 99.9% or less, and may also be 95% or less. Furthermore, the transmittance of light of the first wavelength is preferably 50% or more, and more preferably 70% or more.

[0124] In such cases, the first optical functional layer is preferably a multilayer film in which multiple types of materials with different refractive indices are alternately stacked to form a distributed Bragg reflector (DBR). As shown in Figure 21(b), the first optical functional layer 52 is preferably a multilayer film in which a low refractive index layer 52a and a high refractive index layer 52b are alternately stacked.

[0125] Examples of layers included in a multilayer film include combinations of any of the following materials: SiO2, TiO2, ZrO2, MgO, Ta2O5, Al2O3, MgF2, and CaF2. Among these, it is preferable to have an SiO2 layer as a low refractive index layer and a TiO2 layer as a high refractive index layer. The reflectivity can be controlled by adjusting the types and number of layers included in the multilayer film (the number of pairs of low and high refractive index layers). The thickness (optical distance) of each layer in the multilayer film is preferably equal to the second wavelength λ² / 4.

[0126] (3) Second optical functional layer In this embodiment, the second optical functional layer is a layer that transmits and reflects light of a second wavelength λ2. Examples of such a second optical functional layer include those of the same type as the multilayer film of the first optical functional layer described above. It is preferable that the number of layers included in the multilayer film of the second optical functional layer (number of pairs of low refractive index layers and high refractive index layers) is less than the number of layers included in the multilayer film of the first optical functional layer (number of pairs of low refractive index layers and high refractive index layers). This is because the reflectance of the second optical functional layer can be made smaller than the reflectance of the first optical functional layer.

[0127] The second optical functional layer preferably has a reflectance of 10% or more, and more preferably 30% or more, for light of the second wavelength. On the other hand, it is preferably 50% or less, and more preferably 40% or less. Furthermore, the transmittance of light of the second wavelength preferably has a transmittance of 50% or more, and more preferably 70% or more. On the other hand, it is preferably 90% or less, and more preferably 80% or less.

[0128] (4) Thickness adjustment layer As described above, the thickness T0 (optical distance) of the solid element in this embodiment is preferably n1 times (the second wavelength λ2 / 2) (where n1 is an integer). On the other hand, if the thickness of the solid element is less than the above thickness, as shown in Figure 24, the sensor element structure 50 of this disclosure preferably includes a thickness adjustment layer 55 in at least one of the spaces between the solid element 53 and the first optical functional layer 52, and between the solid element 53 and the second optical functional layer 54.

[0129] The thickness (optical distance) of the thickness adjustment layer 55 is preferably such that the total thickness with the thickness of the solid element is n1 times (n1 is an integer) the second wavelength λ2 / 2.

[0130] The refractive index of the thickness adjustment layer is preferably close to that of the solid element. The ratio of the refractive index n5 of the thickness adjustment layer to the refractive index n0 of the solid element (n5 / n0) is, for example, 1.5 or less, and preferably 1.3 or less. On the other hand, it may be, for example, 0.65 or more, and possibly 0.75 or more.

[0131] The thickness adjustment layer having the above refractive index is preferably composed of, for example, TiO2, In2O3, SnO2, Ta2O5, Nb2O5, Ti3O5, TiO, etc.

[0132] (5) Manufacturing method The method for manufacturing the sensor element structure is not particularly limited, but for example, it includes a solid element preparation step of preparing the solid element, a placement step of arranging the first optical adjustment layer on one side of the solid element and the second optical adjustment layer on the other side, and a groove formation step of forming a groove from the second optical adjustment layer side to at least the interface between the solid element and the first optical adjustment layer.

[0133] The solid-state device preparation process can be carried out by conventionally known methods.

[0134] One possible arrangement process is to laminate and arrange the first optical adjustment layer and the second optical adjustment layer on a solid element by sputtering or the like. The arrangement of the first optical adjustment layer and the arrangement of the second optical adjustment layer may be performed in either order.

[0135] The groove formation process can be carried out by conventionally known methods, for example, grooves can be formed in the second optical adjustment layer and the solid element by dry etching such as reactive ion etching.

[0136] 2.Light source The light source is the same as the light source in the first embodiment described above.

[0137] 3. Microwave field transmitting antenna The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to provide a microwave field to the solid element. As shown in Figure 22, the microwave field transmitting antenna 3 is located on the substrate 2 side of the sensor element structure 50.

[0138] Other features of the microwave field transmitting antenna are the same as those described in the first embodiment.

[0139] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate located between the substrate and the sensor element structure, which guides excitation light, including light of a first wavelength emitted from a light source, to the solid element. In this embodiment, the light guide plate may be an optical waveguide that propagates light in the planar direction of the light guide plate, or it may be a diffuser plate that diffuses light in the vertical direction.

[0140] The optical waveguide and diffuser plate are the same as those described in the first embodiment.

[0141] The light guide plate in this embodiment may have both the function of an optical waveguide and the function of a diffuser plate. For example, in the normal direction D N When viewed along this line, light containing the first wavelength propagates through the optical waveguide from the end of the light source to the end of the sensor element structure, and by using a diffuser plate in the region overlapping with the sensor element structure, it becomes easier to introduce light to the sensor element structure located above.

[0142] 5. Photodetector As shown in Figure 22, the solid-state quantum sensor module in this embodiment includes a photodetector 7 located on the first main surface S1 side of the substrate 2, which detects photoluminescence including light of a second wavelength emitted from the sensor element structure 50. The photoluminescence may include one or more wavelengths of light corresponding to the emission wavelength of the NV center (for example, a wavelength of about 637 nm) as the second wavelength.

[0143] As shown in Figure 22, the photodetector 7 is in the normal direction D N When viewed along this line, the photodetector 7 is positioned so as not to overlap with the microwave field transmitting antenna 3. Preferably, the photodetector 7 has a detection surface on at least its upper surface.

[0144] 6. Reflective mirror As shown in Figure 22, the solid-state quantum sensor module 1C in this embodiment preferably includes a reflective mirror 16 that reflects photoluminescence emitted from the sensor element structure 50 and directs it toward the detector 7. The reflective mirror may be a component made of a metal or a nonmetal, or a component having a reflective layer made of a metal or a nonmetal. The metal or nonmetal material is preferably a nonmagnetic material, and for example, aluminum (Al), tin (Sn), silver (Ag), gold (Au), titanium (Ti), chromium (Cr), or alloys thereof, or oxides, nitrides, or oxidized nitrides thereof can be used.

[0145] The position of the reflective mirror is not particularly limited, as long as it is at least capable of reflecting the photoluminescence emitted from the sensor element structure and directing it toward the detector. Since the photoluminescence is emitted upward from the sensor element structure, it is preferable that the reflective mirror be positioned at least above the sensor element structure. Furthermore, as shown in Figure 22, it is preferable that it be positioned on the first surface S1 of the substrate 2 so as to cover the sensor element structure 50.

[0146] The reflective mirror may be capable of blocking external light. That is, the reflective mirror may function as a light-shielding wall, as described later. In this case, the solid-state quantum sensor module in this embodiment may have a heater element, as described later, at a position surrounded by the reflective mirror and the substrate.

[0147] 7. Circuit board The substrate is the same as that described in the first embodiment.

[0148] 8. Other (1) Reflective layer Figures 25(a) and 25(b) are schematic cross-sectional views showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 25(a), the solid-state quantum sensor module 1C in this embodiment preferably includes a reflective layer 19 that reflects light of a first wavelength on the side of the microwave field transmitting antenna 3 opposite to the side of the light guide plate 6. In particular, if the light guide plate 6 is the diffuser plate described above, it is preferable to arrange the reflective layer 19. If the substrate 2 is a glass substrate, the reflective layer 19 may be located on the side of the second main surface S2 of the substrate 2, as shown in Figure 25(b). By arranging such a reflective layer, it is possible to suppress the leakage of light of the first wavelength without it being introduced into the solid element.

[0149] The reflective layer is not particularly limited as long as it is a layer that reflects light containing the first wavelength, but examples include metal vapor-deposited films. The thickness of the reflective layer is not particularly limited as long as it is a thickness that yields the desired reflectivity for light containing the first wavelength, and can be set as appropriate.

[0150] (2) Wavelength Selective Filter Figure 26 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this disclosure. As shown in Figure 26, the solid-state quantum sensor module 1C of this embodiment preferably includes a wavelength-selective filter 20 that selectively transmits light of a first wavelength within the light guide plate 6. The wavelength-selective filter may be located between the light guide plate 6 and the light source 5.

[0151] The wavelength-selective filter is not particularly limited as long as it selectively transmits light of a first wavelength; known filters can be used.

[0152] (3) Shielding part In this embodiment, the solid-state quantum sensor module preferably includes a shielding portion that shields microwaves emitted from a microwave field transmitting antenna. The shielding portion is preferably positioned to surround the microwave field transmitting antenna. The shielding portion is preferably located in at least one of the substrate and the light guide plate. By providing the shielding portion, it is possible to suppress direct exposure of electronic components such as photodetectors and light sources to noise from microwaves emitted from the microwave field transmitting antenna. The material of the shielding portion in the first embodiment can be used as the material of the shielding portion.

[0153] Figure 27(a) is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. Figure 27(b) is an exploded view of the solid-state quantum sensor module shown in Figure 27(a). Figure 27(c) is a top view of the light guide plate 6 shown in Figure 27(b), and Figure 27(d) shows the substrate 2 and microwave field transmitting antenna 3 shown in Figure 27(b) in the normal direction D N This is a top view as seen along the line.

[0154] The solid-state quantum sensor module shown in Figures 27(a) to 27(d) has a first shielding portion 21a within the substrate 2 and a second shielding portion 21b within the light guide plate 6. By providing shielding portions both within the substrate and the light guide plate in this way, the shielding effect can be improved.

[0155] (4) Other components The solid-state quantum sensor module preferably comprises one or more of the following: a light-shielding wall to block external light, a reference photodetector to detect light containing a first wavelength, a heater element, and a permanent magnet. The light-shielding wall, reference photodetector, heater element, and permanent magnet are the same as those described in the first embodiment. Furthermore, the solid-state quantum sensor module in this embodiment may have various electronic components such as integrated circuits (ICs) such as amplifiers and A / D converters.

[0156] A-3-2. Second aspect Figure 28 is a schematic cross-sectional view showing a second aspect of a solid-state quantum sensor module in a third embodiment of the present disclosure. The solid-state quantum sensor module 1C of the present disclosure comprises a substrate 2 having a first main surface S1 and a second main surface S2 located on the opposite side of the first main surface S1; a sensor element structure 50 including a solid element 53 located on the first main surface S1 side of the substrate 2; a light guide plate 6 located between the substrate 2 and the sensor element structure 50; a microwave field transmitting antenna 3; a light source 5 located on the first main surface S1 side of the substrate 2 that emits excitation light including a first wavelength that excites the color center of the solid element 53 from the ground state to an excited state toward the light guide plate 6; and a photodetector 7 located on the first main surface S1 side of the substrate 2 that detects photoluminescence including light of a second wavelength.

[0157] Furthermore, similar to the second embodiment, the solid element 53 is oriented in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it overlaps with the microwave field transmitting antenna 3. Furthermore, the photodetector 7 is aligned in the direction D normal to the first main surface S1 of the substrate 2. N When viewed along this line, it is located in a position that does not overlap with the microwave field transmitting antenna 3. Furthermore, similar to the second embodiment, the microwave field transmitting antenna 3 is a transparent antenna capable of transmitting light including the first wavelength, and the normal direction D N In this configuration, the light guide plate 6 is positioned between the light source 5 and the microwave field transmitting antenna 3.

[0158] According to this embodiment, the light source, light guide plate, and microwave field transmitting antenna are arranged in a stacked configuration, thereby enabling further miniaturization of the solid-state quantum sensor module. Furthermore, light from the light source can be efficiently introduced into the sensor element structure. The various components of the solid-state quantum sensor module according to this embodiment will be described in detail below.

[0159] The configurations of the solid-state quantum sensor module of this embodiment will be described in detail below.

[0160] 1. Sensor element structure As shown in Figure 28, in this embodiment, the sensor element structure 50 is located on the first main surface S1 side of the substrate 2 and on the side of the light guide plate 6 opposite to the substrate 2 side. Also, the sensor element structure 50 is located in the normal direction D N In this configuration, the microwave field transmitting antenna 3 is positioned on the side opposite to the side facing the substrate 2. Furthermore, the sensor element structure 50 is positioned in the normal direction D N In this configuration, the light source 5 is located on the side opposite to the side facing the substrate 2. The solid-state quantum sensor module 1C of this embodiment is located in the normal direction D N In this configuration, it is preferable to have the substrate 2, light source 5, light guide plate 6, microwave field transmitting antenna 3, and sensor element structure 50 in this order.

[0161] Other features of the sensor element structure in this embodiment are the same as those of the sensor element structure in the first embodiment described above, so their explanation is omitted here.

[0162] 2. Microwave field transmitting antenna The solid-state quantum sensor module in this embodiment includes a microwave field transmitting antenna to provide a microwave field to the solid element. As shown in Figure 28, the microwave field transmitting antenna 3 in this embodiment is positioned on the substrate 2 side of the sensor element structure 50. In this embodiment, the microwave field transmitting antenna 3 may be positioned between the light source 5 and the sensor element structure 50.

[0163] In this embodiment, the microwave field transmitting antenna is preferably a transparent antenna capable of transmitting light of a first wavelength. Such a transparent antenna comprises, for example, a transparent substrate and a metal layer made of metal nanowires. This results in an antenna having both a light-opaque conductive portion and a light-transmitting window portion made of metal nanowires. The material and pattern shape of the metal nanowires are the same as those described in the second embodiment.

[0164] The solid-state quantum sensor module in this embodiment may include a microwave field control circuit. The microwave field control circuit is the same as in the first embodiment.

[0165] 3.Light source The solid-state quantum sensor module in this embodiment includes a light source that emits excitation light containing light of a first wavelength that excites the color center in the solid element from the ground state to an excited state. As shown in Figure 28(a), in this embodiment, the light source 5 is positioned opposite the microwave field transmitting antenna 3 across the light guide plate 6. That is, in the normal direction D N In this configuration, the light guide plate 6 is positioned between the light source 5 and the microwave field transmitting antenna 3. Other features of the light source are the same as those of the first embodiment.

[0166] 4.Light guide plate The solid-state quantum sensor module in this embodiment includes a light guide plate that guides excitation light, including light of a first wavelength emitted from a light source, to the sensor element structure. In this embodiment, the light guide plate is preferably a diffuser plate because it is required to guide light to the sensor element structure located above it. Also in this embodiment, as shown in Figure 28(b), the light guide plate 6 may have a recess in which the light source 5 can be placed. Other features of the diffuser plate are the same as those described in the first embodiment.

[0167] 5. Photodetector The solid-state quantum sensor module in this embodiment is disposed on the first main surface side of the substrate and includes a photodetector that detects photoluminescence including light of a second wavelength. Other features of the photodetector are the same as those in the first embodiment.

[0168] 6. Reflective mirror As shown in Figure 28(a), the solid-state quantum sensor module 1C in this embodiment preferably includes a reflective mirror 16 that reflects the photoluminescence emitted from the sensor element structure 50 and propagates it toward the detector. The reflective mirror is the same as the substrate described in the first embodiment.

[0169] 7. Circuit board The solid-state quantum sensor module in this embodiment includes a substrate. The substrate is a component that supports the components such as the light source, photodetector, sensor element structure, light guide plate, and microwave field transmitting antenna described above. The substrate is the same as the substrate described in the first embodiment.

[0170] 8. Other (1) Reflective layer Figure 29 is a schematic cross-sectional view showing an example of a solid-state quantum sensor module in this embodiment. As shown in Figure 29, the solid-state quantum sensor module 1C in this embodiment preferably includes a reflective layer 19 on the side of the light guide plate 6 opposite to the side facing the sensor element structure 50, which reflects light including a first wavelength. By providing such a reflective layer, leakage of light including the first wavelength from the light guide plate 6 can be suppressed. Other features of the reflective layer are the same as those described in the first embodiment.

[0171] (2) Light-shielding wall and heater element In this embodiment, the solid-state quantum sensor module preferably includes a light-shielding wall to block external light. Furthermore, in this embodiment, the solid-state quantum sensor module preferably includes a heater element in a position enclosed by the light-shielding wall and the substrate. The same light-shielding wall and heater element as in the first embodiment can be used.

[0172] (3) Others The solid-state quantum sensor module in this embodiment may include other components such as a reference photodetector and a permanent magnet. The same reference photodetector and permanent magnet as in the first embodiment can be used.

[0173] B. Sensor device This disclosure provides a sensor device equipped with the solid-state quantum sensor module described above. Because the sensor device in this disclosure is equipped with the solid-state quantum sensor module described above, it is possible to miniaturize it.

[0174] 1. Solid-state quantum sensor module The solid-state quantum sensor modules in this disclosure are the solid-state quantum sensor modules of the first, second, and third embodiments described above.

[0175] 2. Others The sensor device in this disclosure preferably comprises a control unit that controls a light source, a microwave field transmitting antenna, and a photodetector. It may also have a data processing unit that processes the optical measurement signal obtained by the photodetector.

[0176] 3.Applications In this disclosure, the sensor device is preferably a measuring device that measures a magnetic field. On the other hand, by interacting the color-centered electron spin with the object to be measured, it is possible to investigate not only the magnetic field but also various information about the object to be measured. The electron spin state of the color center changes due to various factors such as the electric field from the object to be measured, the temperature of the object to be measured, and mechanical quantities such as mechanical stress (pressure) applied to the object to be measured. Therefore, by appropriately processing the data of the electron spin state after interaction that has been detected, it is also possible to investigate the electric field, temperature, and mechanical quantities of the object to be measured.

[0177] This disclosure is not limited to the embodiments described above. The embodiments described above are illustrative, and any configuration that is substantially identical to the technical idea described in the claims of this disclosure and achieves similar effects is included within the technical scope of this disclosure.

[0178] In other words, the present disclosure provides the following inventions.

[0179] [1] A substrate having a first main surface and a second main surface located on the opposite side of the first main surface, A solid element having a color center located on the first main surface side of the substrate, A light guide plate located between the substrate and the solid element, Microwave field transmission antenna and A light source located on the first main surface side of the substrate, which emits light containing a first wavelength that excites the color center from the ground state to an excited state, The substrate comprises a photodetector located on the first main surface side and detecting photoluminescence including a second wavelength emitted from the solid element, The solid element, when viewed along the direction normal to the first main surface of the substrate, overlaps with the microwave field transmitting antenna. The photodetector is a solid-state quantum sensor module that does not overlap with the microwave field transmitting antenna when viewed along the normal direction to the first main surface of the substrate.

[0180] [2] The solid-state quantum sensor module according to [1], wherein the light source does not overlap with the microwave field transmitting antenna when viewed along the direction normal to the first main surface of the substrate.

[0181] [3] The microwave field transmitting antenna is located on the substrate side in the normal direction of the first main surface of the substrate in a region that overlaps with the light guide plate when viewed along the normal direction of the first main surface of the substrate, and is closer to the substrate than the light guide plate in the normal direction, as described in [2].

[0182] [4] The microwave field transmitting antenna is a transparent antenna capable of transmitting light including the first wavelength, and the light source, when viewed along the direction normal to the first main surface of the substrate, overlaps with the microwave field transmitting antenna. The solid-state quantum sensor module according to [1], wherein the light guide plate is positioned between the light source and the microwave field transmitting antenna in the normal direction in the region where the light source and the microwave field transmitting antenna overlap.

[0183] [5] The solid-state quantum sensor module according to [4], wherein in the region where the light source and the microwave field transmitting antenna overlap, the light source, the light guide plate, the microwave field transmitting antenna, and the solid element are arranged in this order from the substrate side.

[0184] [6] A solid-state quantum sensor module according to any one of [1] to [5], wherein the solid element has a line pattern extending toward the photodetector.

[0185] [7] The solid-state quantum sensor module according to [6], wherein the solid element has a pattern group composed of a plurality of line patterns.

[0186] [8] The solid-state quantum sensor module according to [6] or [7], wherein the line pattern in the solid element has a photonic mirror structure.

[0187] [9] The solid quantum sensor module according to any one of [1] to [8], wherein the end of the solid element on the photodetector side has curvature.

[0188]

[10] A solid-state quantum sensor module according to any one of [6] to [8], wherein the line pattern in the solid element has a plurality of color centers that are arranged at predetermined intervals along the direction toward the photodetector.

[0189]

[11] A solid-state quantum sensor module according to any one of [1] to

[10] , wherein the photodetector and the solid element are connected by photonic wire bonding.

[0190]

[12] The solid-state quantum sensor module according to [7], wherein the solid element has a plurality of the pattern groups.

[0191]

[13] The solid-state quantum sensor module according to any one of [1] to

[12] , wherein the solid element is a diamond having NV centers.

[0192]

[14] The solid-state quantum sensor module according to [3], comprising a reflective layer that reflects light including the first wavelength, located on at least one of the sides of the solid element opposite to the side of the light guide plate and the side of the microwave field transmitting antenna opposite to the side of the light guide plate.

[0193]

[15] The solid-state quantum sensor module according to [4], comprising a reflective layer located on the side of the solid element opposite to the side of the solid element located on the light guide plate side, which reflects light including the first wavelength.

[0194]

[16] The solid-state quantum sensor module according to any one of [1] to

[15] , further comprising a first optical wavelength selective filter that selectively transmits light including the first wavelength, either within the light guide plate or between the light guide plate and the light source.

[0195]

[17] The solid-state quantum sensor module according to any one of [1] to

[16] , further comprising a second optical wavelength selective filter that selectively transmits light including the second wavelength, either within the solid element or between the solid element and the photodetector.

[0196]

[18] The solid-state quantum sensor module has a sensor element structure including the solid element, The sensor element structure comprises, from the substrate side, a first optical functional layer, the solid element, and a second optical functional layer, in this order in the thickness direction. The solid element has a plurality of element portions that are isolated from each other by grooves extending in the thickness direction, The first optical functional layer reflects light of the second wavelength, The solid-state quantum sensor module according to any one of [1] to

[17] , wherein the second optical functional layer transmits and reflects light of the second wavelength.

[0197]

[19] A solid-state quantum sensor module according to any one of [1] to

[18] , wherein at least one of the substrate and the light guide plate has a shielding portion that shields microwaves emitted from the microwave field transmitting antenna.

[0198]

[20] A sensor device comprising a solid-state quantum sensor module as described in any of [1] to

[19] . [Explanation of Symbols]

[0199] 1A, 1B, 1C… Solid-state quantum sensor modules 2… Circuit board 3. Microwave field transmitting antenna 4. Solid-state elements 4p… Line pattern 5 … light source 6 … Light guide plate 7… Photodetector 8a,8b,19… Reflective layer 9a, 9b, 20… Wavelength Selective Filters 10a,10b,21a,21b… Shielding part 11… Polymer waveguide 12… Light-blocking wall 14...Through electrode layer 15… Conductive layer 16… Reflective mirror 41… Luminous region 42… Connection area 50... Sensor element structure 52...first optical functional layer 52a... Low refractive index layer 52b... High refractive index layer 53… Solid-state elements 54…Second optical functional layer 55… Thickness adjustment layer 60… Optical waveguide 61… Core Layer 62… Clad layer B... Bass cavity C... Pattern group O1,O2… void group

Claims

1. A substrate having a first main surface and a second main surface located on the opposite side of the first main surface, A solid element having a color center located on the first main surface side of the substrate, A light guide plate positioned between the substrate and the solid element, which guides light containing a first wavelength to the solid element, Microwave field transmission antenna and A light source located on the first main surface side of the substrate, which emits light including a first wavelength that excites the color center from the ground state to an excited state, The substrate comprises a photodetector located on the first main surface side and detecting photoluminescence including a second wavelength emitted from the solid element, The solid element, when viewed along the direction normal to the first main surface of the substrate, overlaps with the microwave field transmitting antenna. The photodetector, when viewed along the direction normal to the first main surface of the substrate, does not overlap with the microwave field transmitting antenna. The solid element has a line pattern extending in the direction toward the photodetector, A solid-state quantum sensor module in which the solid element has a pattern group composed of a plurality of line patterns.

2. A substrate having a first main surface and a second main surface located on the opposite side of the first main surface, A solid element having a color center located on the first main surface side of the substrate, A light guide plate positioned between the substrate and the solid element, which guides light containing a first wavelength to the solid element, Microwave field transmission antenna and A light source located on the first main surface side of the substrate, which emits light including a first wavelength that excites the color center from the ground state to an excited state, The substrate comprises a photodetector located on the first main surface side and detecting photoluminescence including a second wavelength emitted from the solid element, The solid element, when viewed along the direction normal to the first main surface of the substrate, overlaps with the microwave field transmitting antenna. The photodetector, when viewed along the direction normal to the first main surface of the substrate, does not overlap with the microwave field transmitting antenna. The solid element has a line pattern extending in the direction toward the photodetector, A solid-state quantum sensor module in which the line pattern in the solid element has a photonic mirror structure.

3. The solid-state quantum sensor module according to claim 1, wherein the light source does not overlap with the microwave field transmitting antenna when viewed along the normal direction to the first main surface of the substrate.

4. The solid-state quantum sensor module according to claim 3, wherein the microwave field transmitting antenna is located on the substrate side in the normal direction of the light guide plate, in a region that overlaps with the light guide plate when viewed along the normal direction of the first main surface of the substrate.

5. The microwave field transmitting antenna is a transparent antenna capable of transmitting light including the first wavelength, and the light source, when viewed along the direction normal to the first main surface of the substrate, overlaps with the microwave field transmitting antenna. The solid-state quantum sensor module according to claim 1, wherein in the region where the light source and the microwave field transmitting antenna overlap, the light guide plate is positioned between the light source and the microwave field transmitting antenna in the normal direction.

6. The solid-state quantum sensor module according to claim 5, wherein in the region where the light source and the microwave field transmitting antenna overlap, the light source, the light guide plate, the microwave field transmitting antenna, and the solid element are arranged in this order from the substrate side.

7. The solid-state quantum sensor module according to claim 1, wherein the end of the solid element on the photodetector side has curvature.

8. The solid-state quantum sensor module according to claim 1, wherein the line pattern in the solid element has a plurality of color centers that are arranged at predetermined intervals along the direction toward the photodetector.

9. The solid-state quantum sensor module according to claim 1, wherein the photodetector and the solid element are connected by photonic wire bonding.

10. The solid-state quantum sensor module according to claim 1, wherein the solid element has a plurality of the pattern groups.

11. The solid-state quantum sensor module according to claim 1, wherein the solid element is a diamond having an NV center.

12. The solid-state quantum sensor module according to claim 4, comprising a reflective layer located on at least one of the sides of the solid element opposite to the side facing the light guide plate and the side of the microwave field transmitting antenna opposite to the side facing the light guide plate, which reflects light including the first wavelength.

13. The solid-state quantum sensor module according to claim 5, comprising a reflective layer located on the side of the solid element opposite to the side of the solid element located on the light guide plate side, which reflects light including the first wavelength.

14. The solid-state quantum sensor module according to claim 1, further comprising a first optical wavelength selective filter that selectively transmits light including the first wavelength, either within the light guide plate or between the light guide plate and the light source.

15. The solid-state quantum sensor module according to claim 1, further comprising a second optical wavelength selective filter that selectively transmits light including the second wavelength, either within the solid element or between the solid element and the photodetector.

16. A substrate having a first main surface and a second main surface located on the opposite side of the first main surface, A solid element having a color center located on the first main surface side of the substrate, A light guide plate positioned between the substrate and the solid element, which guides light containing a first wavelength to the solid element, Microwave field transmission antenna and A light source located on the first main surface side of the substrate, which emits light including a first wavelength that excites the color center from the ground state to an excited state, The substrate comprises a photodetector located on the first main surface side and detecting photoluminescence including a second wavelength emitted from the solid element, The solid element, when viewed along the direction normal to the first main surface of the substrate, overlaps with the microwave field transmitting antenna. The photodetector is a solid-state quantum sensor module that, when viewed along the normal direction to the first main surface of the substrate, does not overlap with the microwave field transmitting antenna, The solid-state quantum sensor module has a sensor element structure including the solid element, The solid-state quantum sensor module includes a reflective mirror that reflects the photoluminescence emitted from the sensor element structure and directs it toward the detector. The sensor element structure comprises, from the substrate side, a first optical functional layer, the solid element, and a second optical functional layer, in this order in the thickness direction. The solid element has a plurality of element portions that are isolated from each other by grooves extending in the thickness direction, The first optical functional layer reflects light of the second wavelength, The second optical functional layer is a solid-state quantum sensor module that transmits and reflects light of the second wavelength.

17. The solid-state quantum sensor module according to claim 1, wherein at least one of the substrate and the light guide plate has a shielding portion that shields microwaves emitted from the microwave field transmitting antenna.

18. A sensor device comprising a solid-state quantum sensor module according to any one of claims 1 to 17.

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