Method for manufacturing organic light-emitting diodes

Abstract

An electron beam etching method for reducing pixel size of organic light emitting diodes is provided, which reduces pixel size to hundreds of nanometers. [Solution] By introducing an electron beam lithography process, the existing deposition method through a fine metal mask in the manufacture of organic light-emitting diode display screens is abandoned, and an insulating electron beam resist is used as a fixed mask, thereby avoiding the thermal expansion and cold contraction of materials and positioning errors when moving or replacing the fine metal mask. The process includes step (4) of etching a blind hole structure in the electron beam resist, step (5) of increasing the surface work function of a conductive anode on a substrate, and step (6) of depositing each organic functional layer of the organic light-emitting diode and a conductive cathode on the electron beam resist with the blind hole structure to produce organic light-emitting diodes with pixel sizes of several hundred nanometers.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing an organic light-emitting diode. How to make

Background Art

[0002] An organic light-emitting diode is an electroluminescent device formed by laminating an organic thin-film structure. As the third-generation display technology after cathode-ray tube displays and liquid crystal displays, it has advantages such as being all-solid-state, self-emitting, low power consumption, high contrast, high brightness, high resolution, large area, wide viewing angle, short response time, ultra-thin, and flexible, and thus has become a research hotspot in the display field. The realization of the development of the ultra-high-definition video industry greatly depends on display technology, and ultra-high resolution is required for the display of ultra-high-definition videos.

[0003] Currently, in the industry, the manufacturing of organic light-emitting diode display screens mostly uses a vapor deposition method through a fine metal mask, that is, a movable fine metal mask is used to separate vapor deposition materials to form the red, green, and blue primary color pixels of an organic light-emitting diode. However, due to the shadow effect of the evaporation coating, the aperture size and positional accuracy of the fine metal mask, the thermal expansion and contraction of materials, and the positioning error when moving / exchanging the fine metal mask (all at the micron level), etc., the size of the organic light-emitting diode is difficult to be further reduced after being reduced to several microns. There is literature on reducing an organic light-emitting diode to about 1 micron by an electron beam etching process, but a more complex structure is introduced, and the advantage of the minimum line width of the electron beam etching process being small cannot be fully exerted, and furthermore, the pixel size of the organic light-emitting diode cannot be reduced to several hundred nanometers.

[0004] ​To address this problem, in the scientific journal Science, Vol. 370, No. 6515, pp. 459-463, 2020, the pixel size of an organic light-emitting diode (LED) was reduced to 1.2 microns × 1.2 microns using electron beam etching and reactive ion etching processes, achieving ultra-high pixel density (>10,000 pixels / inch), eliminating reliance on fine metal masks, and significantly reducing the shadow effect of evaporation coatings. However, because this process introduces a nano-patterned metasurface reflector (Fabry-Perot resonator), further reduction of the size of the organic light-emitting diode by electron beam etching is limited to a certain extent. [Overview of the project] [Problems that the invention aims to solve]

[0005] The object of this invention is to provide an electron beam etching method for reducing the pixel size of an organic light-emitting diode (OLED) by simplifying the structure of the OLED and reducing its pixel size to several hundred nanometers, while using an electron beam etching method and improving the steps of the etching process. [Means for solving the problem]

[0006] The present invention Step (1) involves cleaning the circuit board (6), Step (2) involves sputtering a conductive anode (5) onto the substrate (6), Step (3) involves spin-coating the conductive anode (5) with an insulating electron beam resist (7) as a fixed mask, By electron beam exposure and development, a blind hole structure is formed in the electron beam resist (7) that exposes the surface of the conductive anode (5). Furthermore, the overall thickness of the electron beam resist (7) is reduced. Step (4), Step (5) of increasing the surface work function of the conductive anode (5) on the substrate (6), The step (6) includes sequentially depositing a hole transport layer (4), an emissive layer / electron transport layer (3), and a cathode (2) of an organic light-emitting diode onto the electron beam resist (7) on which the blind hole structure is formed and onto the conductive anode (5) within the blind hole structure to manufacture an organic light-emitting diode. fruit, In step (6), the total thickness of the hole transport layer (4), the light-emitting layer and electron transport layer (3), and the cathode (2) laminated on the electron beam resist (7) and the conductive anode (5) in the blind hole structure exceeds the thickness of the electron beam resist (7) which was reduced in step (4). The present invention provides a method for manufacturing an organic light-emitting diode characterized by the above.

[0007] Preferably, in the specific procedure of step (1) above, first, the substrate is thoroughly cleaned, then the substrate is immersed in ultrapure water, acetone, isopropanol, and ultrapure water in that order for 15 min to 20 min each, the substrate is cleaned in an ultrasonic bath while immersed, and finally the substrate is dried by blowing it with compressed gas.

[0008] Preferably, the substrate in step (1) is a transparent insulating substrate.

[0009] Preferably, the conductive anode in step (2) is indium tin oxide (ITO).

[0010] Preferably, in the specific procedure of step (2) above, first, the pre-cleaned substrate is placed in the chamber of the magnetron sputtering coating apparatus, the surface to be sputtered of the substrate is placed downwards and fixed to the sample tray, the ITO target material to be sputtered is placed at the sputtering source position of the magnetron sputtering coating apparatus, next, the mechanical pump is started to pre-evacuate and the vacuum level in the sample chamber is controlled to 10 Pa or less, and then the molecular pump is started to raise the chamber to 1 × 10 -5The chamber is evacuated to above Pa, and finally, the AC sputtering source is started, the rotation speed of the sample tray on which the substrate is placed is set to 20 r / min, and ITO with a thickness of 50 nm to 200 nm is deposited on the substrate at a sputtering speed of 0.1 nm / s, and this is used as the conductive anode for the organic light-emitting diode. After the conductive anode material ITO is deposited, high-purity nitrogen gas is filled into the sample chamber of the magnetron sputtering coating apparatus, and the substrate is removed after it reaches atmospheric pressure.

[0011] Preferably, the electron beam resist in step (3) is PMMA 950.

[0012] Preferably, in the specific procedure of step (3) above, first, a substrate having a conductive anode is placed in a spin coater with the surface to be spin-coated facing upwards, a mechanical pump is started to firmly adsorb and fix the sample, then an appropriate amount of PMMA 950 solution is dropped onto the substrate having a conductive anode, and it is spin-coated sequentially at a rotation speed of 500 r / min for 5s, then at a rotation speed of 5000 r / min for 45s to 60s to uniformly deposit the PMMA 950 solution on the substrate, and finally, the substrate is heated on a heating plate at 180°C for 60s to sufficiently release the anisole solvent in the PMMA 950, and after the PMMA 950 is dried and cured, an electron beam resist with a smooth surface and strong adhesion to the substrate is obtained.

[0013] Preferably, in the specific procedure of step (4), first, the sample prepared in step (3) is placed in a chamber using an electron microscope, with the surface to be observed and etched facing upward, fixed to the sample stage, evacuated sequentially with a mechanical pump and then a molecular pump, and focused so that the electron beam resist can be clearly observed. Next, using an electron beam exposure apparatus matched to the electron microscope, a precisely focused high-energy electron beam of 15kV to 30kV is used to expose the PMMA 950 with a circular array pattern of different diameters. After that, high-purity nitrogen gas is filled into the chamber of the electron microscope, and after reaching atmospheric pressure, the sample is removed. Subsequently, the sample after electron beam exposure is immersed in a special developer for 45s to 60s, then in isopropanol for 15s to 20s, dried by blowing with compressed air, heated on a heating stage at 100°C for 30s to 60s, and finally, the thickness of the electron beam resist is reduced to 40nm to 80nm using a plasma asher to obtain an electron beam resist having a predetermined thickness and a blind hole structure.

[0014] Preferably, in the specific procedure of step (5) above, first, the sample with a blind hole structure is placed in the chamber of the plasma cleaning machine, the mechanical pump is turned on to expel air to a pressure of 350 Pa, then oxygen gas is injected to raise the pressure to 550 Pa, the plasma cleaning machine is turned on and cleaning is performed continuously for 300 s, high-purity nitrogen gas is filled into the chamber of the ion cleaning machine, and the sample is removed after atmospheric pressure is reached.

[0015] Preferably, in the specific procedure of step (6), first, the sample obtained in step (5) is placed in the sample chamber of the evaporation coating apparatus, with the surface to be deposited facing downwards, and the sample is fixed to the sample tray. The hole transport layer material, the light-emitting layer / electron transport layer material, and the cathode material are placed in the respective deposition sources of the evaporation coating apparatus. Next, the mechanical pump is started to pre-evacuate the sample, controlling the vacuum level in the sample chamber to 10 Pa or less. Then, the molecular pump is started to evacuate the chamber to 5 × 10 -4The system is evacuated to above Pa, and finally, the materials on the evaporation source are heated sequentially to deposit hole transport layer material (10nm-60nm), light-emitting layer material (30nm-60nm), electron transport layer material (10nm-60nm), and cathode material (50nm-200nm) in sequence. Here, the rotation speed of the sample tray on which the substrate is placed is 20 r / min, the deposition rates of the hole transport layer material, light-emitting layer material, and electron transport layer material are all 0.1 nm / s, and the deposition rate of the cathode material is 1 nm / s. After the cathode material is deposited, high-purity nitrogen gas is filled into the sample chamber of the evaporation coating apparatus, and the sample is removed after it reaches atmospheric pressure. [Effects of the Invention]

[0016] (1) The minimum pixel size of organic light-emitting diodes can be reduced to several hundred nanometers.

[0017] (2) By introducing the electron beam lithography process method, the deposition method via fine metal masks currently used in the industry for manufacturing organic light-emitting diode display screens is discarded. Instead of the movable fine metal mask used in conventional methods, an insulating electron beam resist is used as a fixed mask, significantly reducing the shadow effect of the evaporated coating, errors caused by the aperture size and positional accuracy of the fine metal mask, and avoiding errors due to thermal expansion and contraction of the material, as well as positioning errors when moving / replacing the fine metal mask, all of which are at the micron level.

[0018] (3) Simplify the complex structures introduced in the electron beam etching process and maximize the advantage of the small minimum line width of the electron beam etching process. [Brief explanation of the drawing]

[0019] [Figure 1] This is a process flowchart of the present invention. [Figure 2]It is a comparison diagram of an improved electron beam lithography process, a deposition process through a fine metal mask, and a typical electron beam lithography process of the present invention. [Figure 3] It is a structural diagram of an organic light-emitting diode manufactured by the present invention. [Figure 4] It is a diagram of a 16×15 blind hole array with a diameter of 800 nm on an electron beam resist after being magnified 1000 times with an optical microscope of the present invention. [Figure 5] It is a diagram of a 6×3 blind hole array with a diameter of 800 nm on an electron beam resist after being magnified 1900 times with a scanning electron microscope of the present invention. [Figure 6] It is a diagram of a 3×3 blind hole array with a diameter of 800 nm on an electron beam resist after being magnified 3300 times with a scanning electron microscope of the present invention. [Figure 7] It is a structural diagram of a single blind hole with a diameter of 800 nm on an electron beam resist after being magnified 40000 times with a scanning electron microscope of the present invention. [Figure 8] It is a diagram of a 2×3 blind hole array with a diameter of 800 nm on an electron beam resist and a diagram of the thickness of electron beam lithography with an atomic force microscope of the present invention. [Figure 9] It is a light emission diagram of an organic light-emitting diode with 16×15 pixels having a diameter of 800 nm of the present invention after being magnified 1000 times under an optical microscope. [Figure 10] It is a spectrum diagram in a spectrometer test of an organic light-emitting diode with 16×15 pixels having a diameter of 800 nm of the present invention.

Embodiments for Carrying Out the Invention

[0020] Hereinafter, the technical solution of the present invention will be further described with reference to the drawings.

[0021] As shown in FIGS. 1 and 2, the electron beam etching method for reducing the pixel size of the organic light-emitting diode of the present invention to several hundred nanometers includes the following steps (1) to (6).

[0022] (1) Cleaning -- Cleaning of circuit board 6 The substrate used is a transparent insulating substrate with a thickness of approximately 150 microns, preferably a thin glass substrate (6 in Figure 3).

[0023] First, thoroughly wash the substrate 6 with detergent water to remove oil stains, dust, and other impurities. Next, immerse the substrate 6 in ultrapure water, acetone, isopropanol, and ultrapure water in that order for 15 to 20 minutes each, cleaning the substrate with an ultrasonic bath during immersion. Finally, dry the substrate 6 by blowing it with compressed gas.

[0024] (2) Sputtering -- The conductive anode 5 is sputtered onto the substrate 6. The conductive anode 5 is made of indium tin oxide (ITO) (5 in Figure 3).

[0025] First, the pre-cleaned substrate 6 is placed inside the chamber of the magnetron sputtering coating apparatus, with the surface to be sputtered facing downwards, and fixed to the sample tray. The ITO target material to be sputtered is placed at the sputtering source position of the magnetron sputtering coating apparatus. Next, the mechanical pump is started to pre-evacuate the sample chamber and control the vacuum level to 10 Pa or less. Then the molecular pump is started to raise the chamber to 1 × 10⁻⁶ -5 The chamber is evacuated to above Pa. Finally, the AC sputtering source is started, the rotation speed of the sample tray on which the substrate is fixed is controlled to 20 r / min, and ITO with a thickness of 50 nm to 200 nm is deposited on the substrate at a sputtering speed of 0.1 nm / s, and this becomes the conductive anode 5 of the organic light-emitting diode. After the conductive anode material ITO is deposited, high-purity nitrogen gas is filled into the sample chamber of the magnetron sputtering coating apparatus, and the sample is removed after the sample chamber reaches atmospheric pressure.

[0026] (3) Spin coating -- The electron beam resist 7 is spin coated onto the conductive anode 5. The electron beam resist 7 uses PMMA 950 (7 in Figure 3), which is an insulator and is used as a fixed mask in place of the movable fine metal mask (1 in Figure 3) in the deposition process via a fine metal mask.

[0027] First, the substrate 6, which has been sputtered with ITO, is placed in the spin coater using tweezers, with the side to be spin-coated with photoresist facing upwards. The mechanical pump is then started to firmly adsorb and fix it in place. Next, an appropriate amount of PMMA 950 is dropped onto the ITO-sputtered substrate 6 using a dropper with a rubber tip. Spin-coating is then performed sequentially at a rotation speed of 500 r / min for 5 seconds, followed by spin-coating at a rotation speed of 5000 r / min for 45 to 60 seconds to uniformly deposit a PMMA 950 film on the substrate 6. Finally, the substrate 6 is heated on a heating plate at 180°C for 60 seconds to allow the anisole solvent in the PMMA 950 to be fully released. After the PMMA 950 has dried and cured, a fixed mask with a smooth surface and strong adhesion to the substrate 6 is obtained.

[0028] (4) Etching -- Blind hole structures are etched into the electron beam resist 7, and the required blind hole structures for separating each pixel are etched into the electron beam resist 7 using an electron beam lithography process as a fixed mask.

[0029] First, the sample is placed in the chamber of the scanning electron microscope JSM-7900F, with the surface to be observed and etched facing upwards, and fixed to the sample stage. The sample is then evacuated using a mechanical pump and then a molecular pump, and the focus is adjusted to allow clear observation of the electron beam resist 7. Next, using an electron beam exposure apparatus matched to the scanning electron microscope, a precisely focused high-energy electron beam of 15kV to 30kV is used to expose the PMMA 950 with a circular array pattern of 800nm ​​in diameter. After that, the chamber of the electron microscope JSM-7900F is filled with high-purity nitrogen gas, and the sample is removed after reaching atmospheric pressure. Subsequently, the electron beam exposed sample is immersed for 45s to 60s in a special developer with a ratio of methyl isobutyl ketone to isopropanol of 1:3, then immersed in isopropanol for 15s to 20s, dried by blowing with compressed air, and heated on a heating stage at 100°C for 30s to 60s to obtain a fixed mask sample with a blind hole structure. The sample was observed under an optical microscope at 1000x magnification. As shown in Figure 4, due to the magnification and diffraction limit of the optical microscope, the blind hole structure appears as black dots under the optical microscope. For clearer observation, the sample with the blind hole structure was returned to a scanning electron microscope and observed. Images magnified at 1900x, 3300x, and 40000x are shown in Figures 5, 6, and 7. It can be clearly seen that the circular hole array structure with a diameter of 800 nm becomes increasingly clear as the magnification increases. To characterize the height of the circular blind hole structure (thickness of PMMA 950), the sample with the blind hole structure was observed under an atomic force microscope, and the image is shown in Figure 8. It can be clearly seen that the height of the circular blind hole structure is approximately 140 nm to 150 nm. To ensure that the sum of the thicknesses of each organic functional layer and the conductive cathode to be deposited later is greater than the thickness of the fixing mask, the thickness of the fixing mask is ultimately reduced to 40 nm to 80 nm using a plasma asher to obtain a sample of a fixing mask having a predetermined thickness and a blind hole structure.

[0030] As can be seen from the comparison of the three methods in Figure 2, the improved electron beam lithography process in the present invention ((1)→(2)→(3.2)→(4.2)→(5.2)→(6.2) in Figure 2) differs from the deposition process via a fine metal mask ((1)→(2)→(3.1)→(4.1)→(5.1) in Figure 2). In the deposition process via a fine metal mask, the gap between the fine metal mask and the substrate is large and movable, resulting in large errors (all at the micron level) due to shadow effects, errors caused by the aperture size and positional accuracy of the fine metal mask, thermal expansion and contraction of the material, and positioning errors when moving / replacing the fine metal mask. In contrast, the fixed mask and substrate in the improved electron beam lithography process are in close contact without any gaps, significantly reducing the shadow effect of the evaporation coating, errors caused by the aperture size and positional accuracy of the fine metal mask, and avoiding errors caused by thermal expansion and contraction of the material and positioning errors when moving / replacing the fine metal mask. Therefore, the pixel size of the organic light-emitting diode can be reduced to several hundred nanometers.

[0031] At the same time, the improved electron beam lithography process in the present invention simplifies the complex structure introduced in a typical electron beam etching process (Figure 2 (1)→(2)→(3.2)→(4.2)→(5.3)→(6.3)) and fully utilizes the advantage of a small minimum line width for electron beam etching.

[0032] (5) Increase the surface work function of the conductive anode 5 on the substrate. First, the sample with a blind hole structure is placed in the plasma cleaning machine chamber, and the mechanical pump is turned on to expel air to a pressure of 350 Pa. Next, oxygen gas is injected to raise the pressure to 550 Pa, and the plasma cleaning machine is turned on to clean continuously for 300 seconds. High-purity nitrogen gas is then filled into the ion cleaning machine chamber, and the sample is removed after it reaches atmospheric pressure.

[0033] (6) Evaporation -- The hole transport layer 4, the light-emitting layer / electron transport layer 3, and the cathode 2 of the organic light-emitting diode are deposited onto the substrate 6 to manufacture an organic light-emitting diode with a pixel diameter of 800 nm. The sum of the thicknesses of each organic functional layer and the cathode must be greater than the thickness of the fixed mask.

[0034] First, place the sample in the sample chamber of the evaporation coating apparatus, positioning it with the surface to be deposited facing downwards, and secure it to the sample tray. Place the four hole transport layer materials, three light-emitting layer / electron transport layer materials, and two cathode materials into the respective deposition sources of the evaporation coating apparatus. Next, start the mechanical pump to pre-evaporate and control the vacuum level in the sample chamber to 10 Pa or less. Then, start the molecular pump to raise the chamber to 5 × 10⁻⁶ -4 The system is evacuated to a pressure of Pa or higher. Finally, the materials on the evaporation source are heated sequentially to deposit the hole transport layer material (4 in Figure 3) with a wavelength of 10 nm to 60 nm, the light-emitting layer and electron transport layer material (3 in Figure 3) with a wavelength of 30 nm to 60 nm, and the cathode material (2 in Figure 3) with a wavelength of 50 nm to 200 nm.

[0035] The sample tray on which the substrate is placed rotates at 20 r / min. The deposition rates of the hole transport layer material, light-emitting layer material, and electron transport layer material are all 0.1 nm / s, while the deposition rate of the cathode material is 1 nm / s. After the conductive cathode material is deposited, high-purity nitrogen gas is filled into the sample chamber of the evaporation coating apparatus, and the substrate is removed after it reaches atmospheric pressure.

[0036] The cathode and anode electrodes of an 800nm ​​pixel diameter organic light-emitting diode are drawn out using conductive silver paste and copper wire, and the 800nm ​​organic light-emitting diode is immediately tested without packaging.

[0037] 1. Luminescence Test -- A voltage of 10V was applied to two electrodes, and the luminescence image, magnified 1000 times with an optical microscope using an organic light-emitting diode with a pixel diameter of 800nm, is shown in Figure 9. 2. Spectral Test -- The emission spectrum of an organic light-emitting diode with a pixel diameter of 800 nm was tested under an Ocean Optics QE65pro spectrometer, and the spectral diagram is shown in Figure 10. [Explanation of Symbols]

[0038] 2, cathode 3. Light-emitting layer and electron transport layer 4. Hole transport layer 5. Conductive anode 6. Circuit board 7. Electron beam resist.

Claims

1. Step (1) involves cleaning the circuit board (6), Step (2) involves sputtering a conductive anode (5) onto the substrate (6), Step (3) involves spin-coating the conductive anode (5) with an insulating electron beam resist (7) as a fixed mask, Step (4) involves forming a blind hole structure in the electron beam resist (7) that exposes the surface of the conductive anode (5) by electron beam exposure and development, and further reducing the overall thickness of the electron beam resist (7). The step (5) of increasing the surface work function of the conductive anode (5) on the substrate (6), The process includes step (6) of sequentially depositing a hole transport layer (4), an emissive layer / electron transport layer (3), and a cathode (2) of an organic light-emitting diode onto the electron beam resist (7) on which the blind hole structure is formed and onto the conductive anode (5) within the blind hole structure, thereby manufacturing an organic light-emitting diode. A method for manufacturing an organic light-emitting diode, characterized in that, in step (6), the total thickness of the hole transport layer (4), the light-emitting layer and electron transport layer (3), and the cathode (2) laminated on the electron beam resist (7) and the conductive anode (5) in the blind hole structure exceeds the thickness of the electron beam resist (7) whose thickness was reduced in step (4).

2. The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that, in the specific procedure of step (1) above, the substrate (6) is immersed in ultrapure water, acetone, isopropanol, and ultrapure water in order for 15 min to 20 min each, the substrate (6) is cleaned in an ultrasonic bath during immersion, and finally the substrate (6) is dried by blowing it with compressed gas.

3. The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that the substrate (6) in step (1) is a transparent insulating substrate.

4. The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that the conductive anode (5) in step (2) is indium tin ITO oxide.

5. In the specific procedure of step (2) above, first, the pre-cleaned substrate (6) is placed in the chamber of the magnetron sputtering coating apparatus, the surface to be sputtered of the substrate (6) is placed downwards and fixed to the tray, the ITO target material to be sputtered is placed at the sputtering source position of the magnetron sputtering coating apparatus, next, the mechanical pump is started to pre-evacuate and the vacuum level in the chamber is controlled to 10 Pa or less, and then the molecular pump is started to raise the chamber to 1 × 10 -5 The method for manufacturing an organic light-emitting diode according to claim 4, characterized in that the pressure is evacuated to Pa or higher, an AC sputtering source is started, the rotation speed of the tray on which the substrate (6) is placed is set to 20 r / min, and ITO with a thickness of 50 nm to 200 nm is deposited on the substrate (6) at a sputtering speed of 0.1 nm / s, and this is used as the conductive anode (5) of the organic light-emitting diode, and after the conductive anode material ITO is deposited, high-purity nitrogen gas is filled into the chamber of the magnetron sputtering coating apparatus, and the substrate (6) is removed after the pressure reaches atmospheric pressure.

6. The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that the electron beam resist (7) in step (3) is polymethyl methacrylate (PMMA).

7. In the specific steps of step (3) above, first, the substrate (6) having the conductive anode (5) is placed in a spin coater with the surface to be spin-coated facing upward, a mechanical pump is started to fix the substrate (6) by vacuum adsorption, then an appropriate amount of polymethyl methacrylate (PMMA) solution is dropped onto the substrate (6) having the conductive anode (5), and the mixture is spin-coated sequentially at a rotation speed of 500 r / min for 5 s, then at a rotation speed of 5000 r / min for 45 s to 60 s to uniformly deposit the PMMA solution on the conductive anode (5), and finally, the substrate (6) is heated on a heating plate at 180°C for 60 s to dry and cure the PMMA, thereby obtaining an electron beam resist (7) with a smooth surface that adheres to the substrate (6), as described in claim 6.

8. In the specific procedure of step (4) above, first, the substrate (6) on which the electron beam resist was formed in step (3) is placed in a chamber using an electron microscope, with the surface to be observed and etched facing upwards, fixed to the stage, evacuated sequentially with a mechanical pump and then a molecular pump, and focused, then using an electron beam exposure apparatus matched to the electron microscope, a focused high-energy electron beam of 15kV to 30kV is used to expose the electron beam resist (7) with a circular array pattern of different diameters, and thereafter, high-purity electrons are placed in the chamber of the electron microscope. The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that nitrogen gas is filled at a certain temperature, the substrate (6) is removed after reaching atmospheric pressure, the substrate (6) after electron beam exposure is then immersed in a special developer for 45 to 60 seconds, then in isopropanol for 15 to 20 seconds, dried by blowing compressed air, heated on a heating stage at 100°C for 30 to 60 seconds, and finally the thickness of the electron beam resist (7) is reduced to 40 nm to 80 nm using a plasma asher to obtain an electron beam resist (7) having a predetermined thickness and a blind hole structure.

9. The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that, in the specific procedure of step (5) above, first, the substrate (6) having the electron beam resist on which the blind hole structure is formed is placed in the chamber of a plasma cleaning machine, the mechanical pump is turned on to discharge air to a pressure of 350 Pa, then oxygen gas is injected to raise the pressure to 550 Pa, the plasma cleaning machine is turned on and cleaning is performed continuously for 300 s, high-purity nitrogen gas is filled into the chamber of the ion cleaning machine, and the substrate (6) is removed after the pressure reaches atmospheric pressure.

10. In the specific procedure of step (6) above, first, the substrate (6) processed in step (5) is placed in the chamber of the evaporation coating apparatus, with the surface to be deposited facing downwards, and the substrate (6) is fixed to the tray. The hole transport layer (4) material, the light-emitting layer / electron transport layer (3) material, and the cathode (2) material are placed in the respective deposition sources of the evaporation coating apparatus. Next, the mechanical pump is started to pre-evacuate the chamber and control the vacuum level in the chamber to 10 Pa or less. Then, the molecular pump is started to evacuate the chamber to 5 × 10 -4 The method for manufacturing an organic light-emitting diode according to claim 1, characterized in that the pressure is evacuated to Pa or higher, the materials on the evaporation source are heated sequentially, and a hole transport layer (4) material of 10 nm to 60 nm, an emissive layer and electron transport layer (3) material of 30 nm to 60 nm, and a cathode (2) material of 50 nm to 200 nm are deposited sequentially, and after the cathode (2) material is deposited, high-purity nitrogen gas is filled into the chamber of the evaporation coating apparatus, and the substrate (6) is removed after the atmospheric pressure is reached.

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