Common Copixel OLED Device

Abstract

Embodiments described herein relate to subpixel circuits for displays such as organic light-emitting diode (OLED) displays. In one embodiment, a device is provided. The device includes a substrate; two external pixel defining layer (PDL) structures disposed on the substrate; an overhanging opening defined by an upper extension of a superstructure disposed on a body structure and extending laterally over the body structure, wherein each body structure is disposed on the upper surface of each external PDL structure, and the overhanging opening defines at least two subpixels, including a first subpixel and a second subpixel; and at least one internal PDL structure disposed on the substrate, wherein the first subpixel and the second subpixel are connected on the upper surface of the internal PDL structure, and the first organic light-emitting diode (OLED) material of the first subpixel is connected to the second OLED material of the second subpixel on the upper surface of the internal PDL structure.

Description

Technical Field

[0001] Cross - reference to Related Applications This application claims priority to U.S. Provisional Patent Application No. 63 / 460,500, filed on April 19, 2023, which is incorporated herein by reference.

[0002] Embodiments described herein generally relate to displays. More particularly, the embodiments described herein relate to sub - pixel circuits and displays such as organic light - emitting diode (OLED) displays.

Background Art

[0003] Input devices including display devices may be used in various electronic systems. An organic light - emitting diode (OLED) is a light - emitting diode (LED) in which a light - emitting electroluminescent layer is a film of an organic compound that emits light in response to an electric current. An OLED device is classified as a bottom - emission device when the emitted light passes through a transparent or semi - transparent bottom electrode and the substrate on which the panel is fabricated. The top - emission device is classified based on whether the light emitted from the OLED device exits through a lid added after the manufacture of the device. OLEDs are currently used to fabricate display devices for many electronic devices. Today's electronic device manufacturers are pushing to provide higher resolutions than just a few years ago while shrinking the size of these display devices.

[0004] An encapsulation layer is used in OLED devices. During etching, residues may remain on the OLED device. This residue may cause dark spots in the OLED device. Therefore, what is needed in the art is a sub - pixel circuit.

Summary of the Invention

[0005] In one embodiment, a device is provided. The device includes a substrate; two external pixel defining layer (PDL) structures disposed on the substrate; an overhanging opening defined by an upper extension of a superstructure disposed on a body structure and extending laterally across the body structure, wherein each body structure is disposed on the upper surface of each external PDL structure, and the overhanging opening defines at least two subpixels, including a first subpixel and a second subpixel; and at least one internal PDL structure disposed on the substrate, wherein the first subpixel and the second subpixel are connected on the upper surface of the internal PDL structure, and the first organic light-emitting diode (OLED) material of the first subpixel is connected to the second OLED material of the second subpixel on the upper surface of the internal PDL structure.

[0006] In another embodiment, a device is provided. The device includes a substrate and first and second pixel definition layers (PDLs) formed on the substrate and defining at least two subpixels with space between them, each of which includes first and second overhang structures; an anode formed on the substrate for each subpixel; an OLED material formed on each anode of the subpixel; and a cathode formed on the OLED material. The cathode extends beneath each of the overhang structures so as to contact both the first sidewall of the first overhang structure and the second sidewall of the second overhang structure, thereby allowing a current to flow from the cathode to at least one of the first and second sidewalls during OLED emission.

[0007] In another embodiment, a device is provided. The device includes a substrate; an external pixel definition layer (PDL) structure disposed on the substrate and defining subpixels of the device; a plurality of overhang openings, each overhang opening defined by a plurality of upper extensions of a plurality of upper structures disposed on a plurality of body structures and extending laterally across the plurality of body structures, each body structure disposed on the upper surface of each external PDL structure, and each overhang opening of the plurality of overhang openings defines at least two subpixels, including a plurality of first subpixels and a plurality of second subpixels; and an internal PDL structure disposed on the substrate and further defining the first subpixels and second subpixels of the device, the first subpixels and the second subpixels being connected on the upper surface of the internal PDL structure, and the first organic light-emitting diode (OLED) material of the first subpixel being connected to the second OLED material of the second subpixel on the upper surface of the internal PDL structure. The first subpixel includes a first anode, a first OLED material positioned above the first anode, below the upper extension, and above a first portion of the upper surface of the internal PDL structure, a first cathode in contact with the first side wall of the main structure and positioned above the first OLED material and the first portion of the upper surface of the internal PDL structure, and a first encapsulation layer positioned above the first cathode, the first side wall of the main structure, and the first portion of the upper surface of the internal PDL structure. The second subpixel includes a second anode, a second OLED material positioned above the second anode, below the upper extension, and above a second portion of the upper surface of the internal PDL structure, a second cathode in contact with the second side wall of the main structure and positioned above the second OLED material and the second portion of the upper surface of the internal PDL structure, and a second encapsulation layer positioned above the second cathode, the second side wall of the main structure, and the second portion of the upper surface of the internal PDL structure. The first cathode is connected to the second cathode on the upper surface of the internal PDL structure.

[0008] In another embodiment, a subpixel circuit is provided. The subpixel circuit includes a substrate; an external pixel definition layer (PDL) structure disposed on the substrate and defining subpixels; an internal PDL structure disposed on the substrate and defining subpixels; and an overhang opening disposed on a main structure and defined by an upper extension of a superstructure extending laterally over the main structure, wherein the main structure is disposed on the upper surface of the external PDL structure, and the overhang opening defines at least two subpixels, including a first subpixel and a second subpixel, the first subpixel and the second subpixel having an internal PDL structure between them. The first subpixel includes a first anode, a first organic light-emitting diode (OLED) material positioned above the first anode, below the upper extension, and on a first portion of the upper surface of the internal PDL structure, a first cathode in contact with the first side wall of the main body structure and positioned above the first OLED material and the first portion of the upper surface of the internal PDL structure, and a first encapsulation layer positioned above the first cathode, the first side wall of the main body structure, and the first portion of the upper surface of the internal PDL structure. The second subpixel includes a second anode, a second OLED material positioned above the second anode, below the upper extension, and above a second portion of the upper surface of the internal PDL structure, a second cathode in contact with the second side wall of the main structure and positioned above the second OLED material and the second portion of the upper surface of the internal PDL structure, and a second encapsulation layer positioned above the second cathode, the second side wall of the main structure, and the second portion of the upper surface of the internal PDL structure, wherein the first cathode is connected to the second cathode above the upper surface of the internal PDL structure, and the first and second cathodes are in contact with both the first and second side walls of the main structure.

[0009] To enable a more detailed understanding of the above-mentioned features of this disclosure, a more specific description of this disclosure, which has been briefly summarized above, can be obtained by referring to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only exemplary embodiments and should not be considered limiting in scope, as other equally valid embodiments may be recognized. [Brief explanation of the drawing]

[0010] [Figure 1A] This is a schematic top cross-sectional view of a subpixel circuit according to an embodiment. [Figure 1B] This is a schematic top cross-sectional view of a subpixel circuit according to an embodiment. [Figure 1C] This is a schematic cross-sectional view of a subpixel circuit according to an embodiment. [Figure 1D] This is a schematic cross-sectional view of a subpixel circuit according to an embodiment. [Modes for carrying out the invention]

[0011] For ease of understanding, the same reference numerals are used to indicate identical elements common to the drawings, where possible. Elements and features of one embodiment are intended to be usefully incorporated into other embodiments without further detail.

[0012] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits and methods for forming subpixel circuits used in displays such as organic light-emitting diode (OLED) displays.

[0013] Figure 1A is a schematic top cross-sectional view of the subpixel circuit 100. The subpixel circuit 100 in Figure 1A has a semi-linear architecture 101 of the first formation 160A. The semi-linear architecture 101 combines subpixel grouping with a local contact architecture. The local contact architecture has direct contact between each subpixel 124 and an overhang structure 110 that forms an overhang aperture 140. This direct contact prevents a voltage drop across the subpixel 124. In a dot architecture, each individual subpixel 124 is defined by a single overhang aperture 140 and has local contact, i.e., direct contact with the overhang structure 110. In a line architecture, an entire row or column of subpixels 124 is defined by a single overhang aperture 140. The semi-linear architecture 101 has at least two subpixels 124 in each overhang aperture 140. In some embodiments, each pixel on the device has a semi-linear architecture 101, as shown in the subpixel circuit 100. In other embodiments, the device has some pixels with a semi-linear architecture 101 and some pixels with a dot architecture. Pixels in the dot architecture have a single subpixel 124 in an overhang aperture 140. A first formation 160A has a first subpixel 124A and a second subpixel 124B defined by a single overhang aperture 140. The overhang aperture 140 is defined by a plurality of superstructures 110B shown in Figures 1C and 1D. The first subpixel 124A and the second subpixel 124B are defined by a pixel definition layer (PDL) structure 120. A PDL structure 120 adjacent to a superstructure 110B is an external PDL structure 120A. The PDL structure 120 that separates two subpixels within a single overhang aperture 140, for example, a first subpixel 124A and a second subpixel 124B, is the internal PDL structure 120B, as shown in Figure 1D.The internal PDL structure 120B is located in the space between at least two subpixels, such as the first subpixel 124A and the second subpixel 124B.

[0014] Residue 135, as shown in Figure 1A, may remain on the sidewall of the overhang structure 110. Residue 135 may be generated during the patterning process of previously formed pixels. For example, after depositing OLED material 104 or encapsulation layer 106 on the first subpixel 124A after the formation of the second subpixel 124B, or after removing the OLED material 104 or encapsulation layer 106 from the first subpixel 124. These prior processes may result in residue 135 on subsequent subpixels 124, such as the first subpixel 124A, after the formation of the second subpixel 124B. Residue 135 may interfere with the performance of the subpixel 124. Residue 135 may interfere with the cathode connection 130 with the sidewall, as shown in Figures 1C and 1D. Residue 135 may weaken or interrupt the cathode connection 130. Residue 135 is further described in Figure 1C. In a dot architecture, residue 135 causes subpixel 124 to malfunction, resulting in a dark spot. In a semi-linear architecture, a cathode connection 130 of the second subpixel 124B provides a connection to the first subpixel 124A. This connection eliminates the dark spot and maintains local contact. Residue 135 may only be present in some cases and only on some sidewalls. Residue 135 is unnecessary for implementing the subpixel circuit 100 described herein. Current flows from the anode to the OLED material 104 and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110 during OLED emission, and in some embodiments, current can flow to both the first sidewall 111A and the second sidewall 111B during OLED emission. The overhang structure 110 can provide electrical communication with at least one busbar to complete the electrical connection.

[0015] Figure 1B is a schematic top cross-sectional view of the subpixel circuit 100. The subpixel circuit 100 in Figure 1B has a semi-linear architecture 101 of a second formation 160B. The second formation 160B includes at least three rows 165. Each row 165 includes at least two subpixels 124. The subpixels 124 in each row 165 are configured to emit light of the same color. At least two rows 165 are configured to display light of different colors. The second formation 160B has at least two subpixels 124 in each overhang aperture 140. As shown in Figure 1B, the second formation 160B may have a first subpixel 124A, a second subpixel 124B, and a third subpixel 124C defined by a single overhang aperture 140. The overhang aperture 140 is defined by a plurality of superstructures 110B. The first subpixel 124A, the second subpixel 124B, and the third subpixel 124C are defined by the PDL structure 120. The PDL structure 120 adjacent to the superstructure 110B is the external PDL structure 120A. The PDL structure 120 separating the first subpixel 124A, the second subpixel 124B, and the third subpixel 124C is the internal PDL structure 120B. In some embodiments, different formations may be used in which a single overhang opening 140 defines at least two subpixels 124.

[0016] Figure 1C is a schematic cross-sectional view of the subpixel circuit 100 across the section line 1C-1C. Figure 1C shows a first subpixel 124A and a fourth subpixel 124D from adjacent overhang openings 140. The first subpixel 124A has residue 135, but the fourth subpixel 124D does not. Residue 135 may be present only in some cases and only on some sidewalls. Residue 135 is unnecessary for implementing the subpixel circuit 100 described herein. Current flows from the anode to the OLED material 104 and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110 during OLED emission, and in some embodiments, current may flow to both the first sidewall 111A and the second sidewall 111B during OLED emission. The overhang structure 110 can provide electrical communication with at least one busbar to complete the electrical connection. Current flows to the busbar from at least one of the first sidewall 111A and the second sidewall 111B during OLED light emission.

[0017] The subpixel circuit 100 includes a substrate 102. A metal-containing layer 103 is disposed on the substrate 102. The metal-containing layer 103 is defined by adjacent PDL structures 120 disposed on the substrate 102. In some embodiments, the metal-containing layer 103 is pre-patterned on the substrate 102, and the substrate is a pre-patterned indium tin oxide (ITO) glass substrate. The metal-containing layer 103 is configured to act as the anode for each subpixel 124. The metal-containing layer 103 includes, but is not limited to, chromium, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials. In some embodiments, the metal-containing layer 103 is a stack including an ITO layer disposed on top of a silver layer disposed on top of an ITO layer.

[0018] The PDL structure 120 is placed on the substrate 102. The PDL structure 120 includes either an organic material, an organic material with an inorganic coating on top, or an inorganic material. Examples of the organic material for the PDL structure 120 include, but are not limited to, polyimide. Examples of the inorganic material for the PDL structure 120 include, but are not limited to, silicon oxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (Si2N2O), magnesium fluoride (MgF2), or a combination thereof. Adjacent PDL structures 120 define each subpixel 124 of the subpixel circuit 100. Internal PDL structures 120B define each subpixel 124 inside a single overhang aperture 140. External PDL structures 120A define subpixels 124 with respect to the subpixels 124 in adjacent overhang apertures 140.

[0019] Each subpixel 124 has an organic light-emitting diode (OLED) material 104 configured to emit white, red, green, blue, or other colored light when energized. Subpixels 124 within the same overhang aperture 140 have the same OLED material. In some embodiments, such as shown in Figure 1C, a first subpixel 124A has a first OLED material 104A configured to emit red light. A fourth subpixel 124D has a fourth OLED material 104D configured to emit blue light.

[0020] The overhang structure 110 is positioned on the upper surface 121 of the external PDL structure 120A. The overhang structure 110 is permanent to the subpixel circuit. The overhang structure 110 further defines the subpixels 124 of the subpixel circuit 100 through the overhang opening 140. The overhang structure 110 includes at least a superstructure 110B positioned on the main structure 110A. In one embodiment, the superstructure 110B is positioned on the main structure 110A. The main structure 110A is positioned on the upper surface 121 of the PDL structure 120. In one embodiment, the main structure 110A is positioned on the upper surface 121 of the PDL structure 120. Each overhang structure 110 includes an adjacent overhang 109. The adjacent overhang 109 is defined by the upper extension 109A of the superstructure 110B, which extends laterally beyond the side wall 111 of the main structure 110A.

[0021] The superstructure 110B includes either a non-conductive material, an inorganic material, or a metal-containing material. The main body structure 110A includes either an inorganic material or a metal-containing material. Non-conductive materials include, but are not limited to, inorganic silicon-containing materials. For example, silicon-containing materials include silicon oxides or nitrides, or combinations thereof. Metal-containing materials include at least one of the following metals or metal alloys: titanium (Ti), aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or combinations thereof. The inorganic materials of the main body structure 110A and the superstructure 110B include silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), amorphous silicon, or combinations thereof.

[0022] In one embodiment, the superstructure 110B includes a non-conductive inorganic material, and the main body structure 110A includes a conductive inorganic material or a metal-containing material. In another embodiment, the superstructure 110B includes a conductive inorganic material or a metal-containing material, and the main body structure 110A includes a conductive inorganic material or a metal-containing material.

[0023] The adjacent overhang 109 is defined by the upper extension 109A of the upper structure 110B. At least the bottom surface 107 of the upper structure 110B is wider than the upper surface 108 of the main body structure 110A, thereby forming the upper extension 109A of the overhang 109. The upper structure 110B is disposed on the upper surface 108 of the main body structure 110A. The upper extension 109A of the upper structure 110B forms the overhang 109 and enables the upper structure 110B to be in the shadow of the main body structure 110A.

[0024] The OLED material 104 is disposed under the overhang 109 and on the metal-containing layer 103 and the PDL structure 120. The cathode 105 is disposed on the OLED material 104 and extends under the overhang 109. The cathode 105 contacts the side wall 111 of the main body structure 110A to form a cathode connection 130. Current flows from the cathode 105 to the side wall 111. The cathode connection 130 causes light emission when the sub-pixel 124 is activated. Weakening the cathode connection 130 reduces the light emitted by the sub-pixel 124. The sub-pixel 124 cannot be activated when the cathode connection 130 is interrupted. The first sub-pixel 124A has a first cathode 105A. The fourth sub-pixel 124D has a fourth cathode 105D. The cathode 105 includes a conductive material such as a metal or a metal alloy. For example, the cathode 105 includes, but is not limited to, silver, magnesium, chromium, titanium, aluminum, ITO, or combinations thereof. In some embodiments, the material of the cathode 105 is different from the materials of the main body structure 110A and the upper structure 110B.

[0025] Each subpixel 124 includes an encapsulation layer 106. The encapsulation layer 106 may be a local passivation layer or equivalent. The encapsulation layer 106 of each subpixel 124 is located on the cathode 105 (and OLED material 104), and the encapsulation layer 106 extends below at least a portion of the overhang structure 110 and over at least a portion of the respective side walls 111 of adjacent overhang structures 110. In one embodiment, the encapsulation layer 106 is located on the side walls 111 of the main structure 110A, the bottom surface 107 of the superstructure 110B, the side walls 113 of the superstructure 110B, and a portion of the top surface 115 of the superstructure 110B of the overhang structure 110. In one embodiment, the encapsulation layer 106 has a gap 150. Each of the gaps 150 is defined by a first portion 151, a second portion 152, and a third portion 153, with the first portion 151 in contact with the third portion 153 of the encapsulation layer 106. The first portion 151 of the encapsulation layer 106 is positioned above the cathode 105. The second portion 152 of the encapsulation layer 106 is positioned above the side wall 111 of the main structure 110A. The third portion 153 of the encapsulation layer 106 is positioned below the lower surface 117 of the upper extension 109A of the superstructure 110B. The first portion 151 of the encapsulation layer 106 may be in contact with the third portion 153 of the encapsulation layer 106.

[0026] The residue 135 may be formed from previous patterning of other OLED materials 104 and the encapsulation layer 106. In some embodiments, the residue 135 may be formed within the subpixel 124 by other processes. In some subpixels 124, as shown in the first subpixel 124A, the residue 135 interferes with the cathode connection 130. The residue 135 is between the first cathode 105A and the sidewall 111 of the body structure 110A. The cathode connection 130 can activate the subpixel 124. When the cathode connection 130 is blocked by the residue 135, the subpixel 124 cannot be activated. If all cathode connections 130 in the subpixel 124 are blocked by the residue 135, a dark spot is caused without the subpixel 124 being activated. The residue 135 may be present only in some cases and only on some sidewalls. The residue 135 is unnecessary for implementing the subpixel circuit 100 described herein. During OLED emission, current flows from the anode to the OLED material 104 and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110, and in some embodiments, during OLED emission, it can flow to both the first sidewall 111A and the second sidewall 111B. The overhang structure 110 can provide electrical communication with at least one busbar to complete the electrical connection. During OLED emission, current flows from at least one of the first sidewall 111A and the second sidewall 111B to the busbar.

[0027] The fourth subpixel 124D has no residue 135. Without residue 135, the cathode connection 130 can function properly. The fourth cathode 105D is connected to the side wall 111 of the main body structure 110A. There is no dark spot in the fourth subpixel 124D. Residue 135 may be present only in some cases and only on some side walls. Residue 135 is unnecessary for implementing the subpixel circuit 100 described herein. Current flows from the anode to the OLED material 104 and from the cathode 105 to at least one of the first side wall 111A and the second side wall 111B of the overhang structure 110 during OLED emission, and in some embodiments, current can flow to both the first side wall 111A and the second side wall 111B during OLED emission.

[0028] Figure 1D is a schematic cross-sectional view of a subpixel circuit 100 crossing the cross-sectional line 1D-1D. Figure 1D shows a first subpixel 124A and a second subpixel 124B from a single overhang aperture 140. The first OLED material 104A of the first subpixel and the second OLED material 104B of the second subpixel 124B are the same. In Figure 1D, the first OLED material 104A and the second OLED material 104B are configured to emit red light when energized. In other embodiments, the first OLED material 104A and the second OLED material 104B are configured to emit white, green, blue, or other colored light when energized. The first subpixel 124A has residue 135, but the second subpixel 124B does not. As shown in Figure 1C with the first subpixel 124A, the second subpixel 124B comprises a substrate 102, a metal-containing layer 103, an OLED material 104, a cathode 105, and an encapsulation layer 106. In some embodiments, the cathode 105 includes a first cathode 105A of the first subpixel 124A and a second cathode 105B of the second subpixel 124B. The first cathode 105A is connected to the second cathode 105B on the upper surface of the internal PDL structure 120B. In other embodiments, the cathode 105 may be a continuous layer. The cathode 105 extends from the first sidewall 111A through the first subpixel 124A to the upper surface of the internal PDL structure 120B. The cathode 105 then extends through the second subpixel 124B to the second sidewall 111B.

[0029] According to the semi-linear architecture 101, the second subpixel 124B is defined by an overhang structure 110 and a one-sided external PDL structure 120A. On the other hand, the second subpixel 124B is separated from the first subpixel 124A by an internal PDL structure 120B. The first OLED material 104A of the first subpixel 124A is connected to the second OLED material 104B of the second subpixel 124B. The first cathode 105A of the first subpixel 124A is connected to the second cathode 105B of the second subpixel 124B on the upper surface of the internal PDL structure 120B. The connection between the first cathode 105A and the second cathode 105B allows the first cathode 105A to be connected to the second side wall 111B of the main structure 110A of the second subpixel 124B via the second cathode 105B. This connection allows the second cathode 105B to be connected to the first side wall 111A of the main structure 110A of the first subpixel 124A via the first cathode 105A. If the cathode connection 130 is interrupted at the first side wall 111A, current flows from the first cathode 105A through the second cathode 105B to the second side wall 111B during OLED emission. The first subpixel 124A is activated even when the cathode connection 130 is interrupted at the first side wall 111A. If the cathode connection 130 is interrupted by the second side wall 111B, current flows from the second cathode 105B through the first cathode 105A to the first side wall 111A during OLED emission. The second subpixel 124B is activated even when the cathode connection 130 is interrupted by the second side wall 111B.

[0030] As shown in Figure 1D, the first subpixel 124A has residue 135 that interrupts the cathode connection 130. As explained in Figure 1C, if the cathode connection 130 is interrupted, the subpixel 124 cannot be activated. The first subpixel 124A can be activated by the cathode connection 130 at the second side wall 111B of the main structure 110A of the second subpixel 124B. The first cathode 105A is connected to the second cathode 105B on the internal PDL structure 120B. The second cathode 105B is connected to the second side wall 111B of the main structure 110A of the second subpixel 124B. Similarly, if the cathode connection 130 of the first subpixel 124A weakens at the first side wall 111A of the main structure 110A of the first subpixel 124A, the cathode connection 130 at the second side wall 111B of the main structure 110A of the second subpixel 124B can reinforce the cathode connection 130 of the first subpixel 124A.

[0031] In summary, embodiments described herein relate to a subpixel circuit 100 that can be used in displays such as OLED displays. The subpixel circuit 100 has a semi-linear architecture 101. The semi-linear architecture 101 combines subpixel grouping with a local contact architecture. The semi-linear architecture 101 has at least two subpixels 124, for example, a first subpixel 124A and a second subpixel 124B, in each overhang aperture 140. By having two subpixels 124 in a single overhang aperture 140, one subpixel 124 with residue 135 can be activated by the cathode 105 of the paired subpixels 124. This prevents dark spots while simultaneously maintaining the advantages of local contact from a dot architecture. The local contact architecture allows current to be driven from the cathode 105 for each subpixel 124. Since each cathode 105 is connected to the main structure 110A, there is no voltage loss throughout the subpixel 124, which can improve device performance. Residue 135 may be present only in some cases and only on some sidewalls. Residue 135 is unnecessary for implementing the subpixel circuit 100 described herein. Current flows from the anode to the OLED material 104 and from the cathode 105 to at least one of the first sidewall 111A and the second sidewall 111B of the overhang structure 110 during OLED emission, and in some embodiments, current can flow to both the first sidewall 111A and the second sidewall 111B during OLED emission. If the cathode connection 130 is interrupted at the first sidewall 111A, current flows from the first cathode 105A through the second cathode 105B to the second sidewall 111B during OLED emission. The first subpixel 124A is activated even when the cathode connection 130 is interrupted by the first sidewall 111A. If the cathode connection 130 is interrupted by the second sidewall 111B, current flows from the second cathode 105B through the first cathode 105A to the first sidewall 111A during OLED emission.The second subpixel 124B is activated even when the cathode connection 130 is interrupted by the second sidewall 111B. The overhang structure 110 can complete the electrical connection by providing electrical communication with at least one busbar. Current flows from at least one of the first sidewall 111A and the second sidewall 111B to the busbar during OLED emission.

[0032] While the above applies to embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure can be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. It is a device, circuit board and Two external pixel definition layer (PDL) structures are arranged on the substrate, An overhanging opening is defined by an upper extension of a superstructure that is positioned on the main body structure and extends laterally beyond the main body structure, wherein each main body structure is positioned on the upper surface of each external PDL structure, and the overhanging opening defines at least two subpixels, including a first subpixel and a second subpixel. At least one internal PDL structure disposed on the substrate, wherein the first subpixel and the second subpixel are connected on the upper surface of the internal PDL structure, and the first organic light-emitting diode (OLED) material of the first subpixel is connected to the second OLED material of the second subpixel on the upper surface of the internal PDL structure, A device equipped with the following features.

2. The device according to claim 1, wherein the cathode is disposed on the first OLED material and the second OLED material, and the cathode is in contact with the first side wall of the first body structure and the second side wall of the second body structure.

3. The first subpixel described above is The first anode and, The first OLED material is positioned above the first anode, below the upper extension, and above the first portion of the upper surface of the internal PDL structure, A first cathode is in contact with the first side wall of the main body structure and is positioned on the first OLED material and the first portion of the upper surface of the internal PDL structure, The first cathode, the first side wall of the main body structure, and the first encapsulation layer disposed on the first portion of the upper surface of the internal PDL structure, The device according to claim 1, comprising:

4. The second subpixel is, The second anode and, The second OLED material is positioned above the second anode, below the upper extension, and above the second portion of the upper surface of the internal PDL structure, A second cathode is in contact with the second side wall of the main body structure and is positioned on the second OLED material and the second portion of the upper surface of the internal PDL structure, The second cathode, the second side wall of the main body structure, and the second encapsulation layer disposed on the second portion of the upper surface of the internal PDL structure, The device according to claim 3, comprising:

5. The device according to claim 4, wherein the first cathode is connected to the second cathode on the upper surface of the internal PDL structure.

6. The device according to claim 5, wherein, during OLED emission, current flows from the first cathode through the second cathode to the second side wall.

7. The device according to claim 5, wherein, during OLED emission, current flows from the second cathode through the first cathode to the first side wall.

8. It is a device, circuit board and First and second pixel definition layers (PDLs) formed on the substrate, defining at least two subpixels with space between them, Each of the first and second PDLs includes a first and second overhang structure thereon, Anode formed on the substrate for each subpixel, An OLED material formed on each of the anodes of the subpixels, A cathode formed on the OLED material, wherein the cathode extends beneath the first and second overhang structures so as to contact both the first sidewall of the first overhang structure and the second sidewall of the second overhang structure, thereby allowing current to flow from the cathode to at least one of the first and second sidewalls during OLED emission. A device equipped with the following features.

9. The device according to claim 8, wherein, during OLED emission, the current flows from at least one of the first side wall and the second side wall to the busbar.

10. The device according to claim 8, wherein the cathode includes a first cathode of a first subpixel and a second cathode of a second subpixel.

11. The device according to claim 10, wherein the first cathode is connected to the second cathode on the upper surface of an internal PDL structure located in the space between the two subpixels.

12. The device according to claim 11, wherein, during OLED emission, current flows from the first cathode through the second cathode to the second side wall.

13. The device according to claim 11, wherein, during OLED emission, current flows from the second cathode through the first cathode to the first side wall.

14. It is a device, circuit board and An external pixel definition layer (PDL) structure is disposed on the substrate and defines the subpixels of the device, A plurality of overhang openings, each overhang opening is positioned on a plurality of main body structures and defined by a plurality of upper extensions of a plurality of upper structures that extend laterally beyond the plurality of main body structures, each main body structure is positioned on the upper surface of each external PDL structure, and each of the plurality of overhang openings defines at least two subpixels, including a plurality of first subpixels and a plurality of second subpixels, An internal PDL structure disposed on the substrate and further defining the first subpixel and the second subpixel of the device, wherein the first subpixel and the second subpixel are connected on the upper surface of the internal PDL structure, and the first organic light-emitting diode (OLED) material of the first subpixel is connected to the second OLED material of the second subpixel on the upper surface of the internal PDL structure, Equipped with, The first subpixel described above is The first anode and, The first OLED material is positioned above the first anode, below the upper extension, and above the first portion of the upper surface of the internal PDL structure, A first cathode is in contact with the first side wall of the main body structure and is positioned on the first OLED material and the first portion of the upper surface of the internal PDL structure, The first cathode, the first side wall of the main body structure, and the first encapsulation layer disposed on the first portion of the upper surface of the internal PDL structure, Equipped with, The second subpixel is, The second anode and, The second OLED material is positioned above the second anode, below the upper extension, and above the second portion of the upper surface of the internal PDL structure, A second cathode is in contact with the second side wall of the main body structure and is positioned on the second OLED material and the second portion of the upper surface of the internal PDL structure, The second cathode, the second side wall of the main body structure, and the second encapsulation layer disposed on the second portion of the upper surface of the internal PDL structure, Equipped with, The first cathode is connected to the second cathode on the upper surface of the internal PDL structure. device.

15. The device according to claim 14, wherein the first cathode is connected to the second side wall via the second cathode, and the second cathode is connected to the first side wall via the first cathode.

16. The device according to claim 15, wherein, during OLED emission, current flows from the first cathode through the second cathode to the second side wall.

17. The device according to claim 15, wherein, during OLED emission, current flows from the second cathode through the first cathode to the first side wall.

18. It is a subpixel circuit, circuit board and An external pixel definition layer (PDL) structure is disposed on the aforementioned substrate and defines subpixels, An internal PDL structure is placed on the aforementioned substrate and defines subpixels, An overhanging opening is defined by an upper extension of a superstructure that is positioned on a main body structure and extends laterally beyond the main body structure, wherein the main body structure is positioned on the upper surface of an external PDL structure, and the overhanging opening defines at least two subpixels, including a first subpixel and a second subpixel, and the first subpixel and the second subpixel have an internal PDL structure between them. Equipped with, The first subpixel described above is The first anode and, A first organic light-emitting diode (OLED) material is disposed above the first anode, below the upper extension, and above the first portion of the upper surface of the internal PDL structure, A first cathode is in contact with the first side wall of the main body structure and is positioned on the first OLED material and the first portion of the upper surface of the internal PDL structure, The first cathode, the first side wall of the main body structure, and the first encapsulation layer disposed on the first portion of the upper surface of the internal PDL structure, Equipped with, The second subpixel is, The second anode and, A second OLED material is positioned above the second anode, below the upper extension, and above the second portion of the upper surface of the internal PDL structure, A second cathode is in contact with the second side wall of the main body structure and is positioned on the second OLED material and the second portion of the upper surface of the internal PDL structure, A second encapsulation layer disposed on the second cathode, the second side wall of the main body structure, and the second portion of the upper surface of the internal PDL structure, wherein the first cathode is connected to the second cathode on the upper surface of the internal PDL structure, and the first cathode and the second cathode are in contact with both the first side wall and the second side wall of the main body structure, Equipped with, Subpixel circuit.

19. The subpixel circuit according to claim 18, wherein, during OLED emission, current flows from the first cathode through the second cathode to the second side wall.

20. The subpixel circuit according to claim 18, wherein, during OLED emission, current flows from the second cathode through the first cathode to the first side wall.

Images