Method for manufacturing a junction-type solid-state image sensor and a translucent substrate.

Abstract

To provide a transparent substrate included in a bonded solid-state image sensor that reduces manufacturing effort and cost.SOLUTION: A transparent substrate 60 used in a bonded solid-state image sensor includes transparent conductive films 50a and 50b that connect from a front surface to an image acquisition region 60D on a back surface.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a translucent substrate, a bonded solid-state imaging device, and a method for manufacturing a translucent substrate.

Background Art

[0002] Conventionally, a first amorphous selenium film is formed on a CMOS (Complementary Metal Oxide Semiconductor) circuit board, a second amorphous selenium film is formed on a translucent substrate, and these amorphous selenium films are heated and pressed to be bonded, thereby achieving an image acquisition and charge multiplication operation. A bonded solid-state imaging device is known (see, for example, Non-Patent Document 1).

[0003] As such a bonded solid-state imaging device, for example, as shown in FIG. 7, by including a translucent substrate having a tapered end and a transparent conductive film along the shape of the translucent substrate, a device that facilitates the connection between the power source and the transparent conductive film is known.

Prior Art Documents

Non-Patent Documents

[0004]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, conventional bonded solid-state imaging devices have a problem in that processing of the translucent substrate is laborious and costly.

[0006] In view of such circumstances, an object of the present invention is to provide a translucent substrate included in a bonded solid-state imaging device that reduces manufacturing labor and cost. [Means for solving the problem]

[0007] an embodiment Condensed solid-state image sensor teeth, The system comprises, in this order: a signal readout circuit board, an electron injection blocking reinforcement layer, a photoelectric conversion film, a hole injection blocking reinforcement layer, and a light-transmitting substrate. Condensed solid-state image sensor in There is, An image acquisition area on the back surface of the translucent substrate in contact with the hole injection inhibition reinforcement layer, the side surface of the translucent substrate, and a portion of the surface of the translucent substrate are provided in connection with the image acquisition area on the back surface of the translucent substrate. Equipped with a transparent conductive film The transparent conductive film is connected to a power supply for supplying voltage to the photoelectric conversion film. It is characterized by the following:

[0008] Furthermore, according to one embodiment Condensed solid-state image sensor In this invention, the transparent conductive film is characterized in that it is formed from one of the following materials: indium tin oxide, zinc tin oxide, tin oxide, gold, aluminum, copper, molybdenum, and zinc.

[0009] Furthermore, according to one embodiment Condensed solid-state image sensor In this invention, the translucent substrate is characterized by being made of one of the following materials: single-crystal sapphire, quartz, optical glass, beryllium, acrylic, and plastic.

[0010] Furthermore, according to one embodiment Condensed solid-state image sensor In this invention, the translucent substrate is characterized by being rectangular, square, trapezoidal, polygonal, circular, or flexible.

[0011] moreover, Bonded Solid State Image Sensor According to One Embodiment In this case, the resistance between the front and back surfaces of the transparent conductive film is 5 MΩ or less. It is characterized by the following:

[0012] A method for manufacturing a light-transmitting substrate according to one embodiment is: The system comprises, in this order: a signal readout circuit board, an electron injection blocking reinforcement layer, a photoelectric conversion film, a hole injection blocking reinforcement layer, and a translucent substrate. Used in junction solid-state image sensors , the above A method for manufacturing a light-transmitting substrate, comprising the steps of: applying a first sputtering to the surface, side, and back surface of the light-transmitting substrate to form a first transparent conductive film that extends from the surface to the back surface; applying a second sputtering to the first transparent conductive film to form a second transparent conductive film that extends from the surface to the back surface; and applying a third sputtering to an image acquisition region on the back surface to form a third transparent conductive film that partially overlaps with the second transparent conductive film.

[0013] Furthermore, in the method for manufacturing a translucent substrate according to one embodiment, one of the front surface and the back surface of the first transparent conductive film is formed thicker than the other, and one of the front surface and the back surface of the second transparent conductive film is formed thicker than the other.

Advantages of the Invention

[0014] According to the present invention, it is possible to provide a translucent substrate included in a bonded solid-state imaging device that reduces manufacturing labor and costs.

Brief Description of the Drawings

[0015] [Figure 1] It is a schematic cross-sectional view showing an example of the configuration of a bonded solid-state imaging device according to this embodiment. [Figure 2A] It is a schematic diagram showing an example of the configuration of a translucent substrate according to this embodiment. [Figure 2B] It is a schematic cross-sectional view showing an example of the configuration of a translucent substrate according to this embodiment. [Figure 3] It is an external photograph showing an example of the configuration of a translucent substrate according to this embodiment. [Figure 4A] It is a schematic diagram and a schematic cross-sectional view showing an example of the method for manufacturing a translucent substrate according to this embodiment. [Figure 4B] It is a schematic diagram and a schematic cross-sectional view showing an example of the method for manufacturing a translucent substrate according to this embodiment. [Figure 4C] It is a schematic diagram and a schematic cross-sectional view showing an example of the method for manufacturing a translucent substrate according to this embodiment. [Figure 4D] It is a schematic diagram and a schematic cross-sectional view showing an example of the method for manufacturing a translucent substrate according to this embodiment. [Figure 5A] It is a diagram showing an example of the state of sputtering according to this embodiment. [Figure 5B] It is a diagram showing an example of the state of sputtering according to this embodiment. [Figure 6A] It is a diagram showing an example of the resistance value in the transparent conductive film according to this embodiment. [Figure 6B]This figure shows an example of a measurement location for the resistance value in the transparent conductive film according to this embodiment. [Figure 7] This is a schematic cross-sectional view showing an example of the configuration of a conventional fused solid-state image sensor. [Modes for carrying out the invention]

[0016] Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. In principle, identical components will be given the same reference numeral, and redundant explanations will be omitted. For the sake of clarity, the aspect ratios of each component in the drawings are exaggerated from their actual proportions.

[0017] In this specification, "front surface" means the side of the translucent substrate on the light incidence side as depicted in the drawings, and "back surface" means the side of the translucent substrate on the non-light incidence side as depicted in the drawings. However, the terms "front" and "back" are merely defined for convenience and should not be interpreted restrictively.

[0018] <Condensed Solid State Image Sensor> An example of the configuration of the fused solid-state image sensor 100 according to this embodiment will be described with reference to Figures 1, 2A, 2B, and 3.

[0019] The junction-type solid-state image sensor 100 comprises, in this order, a signal readout circuit board 10, an electron injection blocking reinforcement layer 20, a photoelectric conversion film 30, a hole injection blocking reinforcement layer 40, and a translucent substrate 60 having transparent conductive films 50a and 50b.

[0020] The junctional solid-state image sensor 100 is electrically connected to the package 1 via bonding wires 2. The package 1 may be a known package applicable in the art. The bonding wires 2 may be made of a conductive material such as gold (Au).

[0021] The signal readout circuit board 10 is, for example, a substrate on which a CMOS structure is formed on a silicon substrate. The signal readout circuit board 10 includes a pixel region 10D on which a plurality of pixel electrodes are provided. The plurality of pixel electrodes are provided in correspondence with each pixel and are electrically connected, for example, to the negative electrode of the power supply 3. The signal readout circuit reads out the charge generated and multiplied in the photoelectric conversion film 30 by the incidence of light L via the plurality of pixel electrodes.

[0022] The pixel electrodes are formed from metal films such as gold (Au), copper (Cu), aluminum (Al), tungsten (W), or molybdenum (Mo). The pixel electrodes are formed by known semiconductor manufacturing processes, such as by vacuum deposition or sputtering, followed by patterning by dry etching. The thickness of the pixel electrodes is limited to a thickness that provides the required conductivity, preferably between 200 nm and 1 μm. An insulating film, such as silicon oxide (SiO2), may be provided between the pixel electrodes.

[0023] The electron injection blocking reinforcement layer 20 has the function of blocking electron injection from multiple pixel electrodes to the photoelectric conversion film 30, and also the function of insulating each of the multiple pixel electrodes. The electron injection blocking reinforcement layer 20 is provided between the signal readout circuit board 10 and the photoelectric conversion film 30. By providing the electron injection blocking reinforcement layer 20, the generation of dark current in the junction solid-state image sensor 100 can be suppressed.

[0024] The electron injection blocking reinforcement layer 20 is preferably made of a material capable of blocking electron injection from multiple pixel electrodes to the photoelectric conversion film 30. Examples of such materials include molybdenum trioxide (MoO3), nickel oxide (NiO), and gallium oxide (Ga2O3). The electron injection blocking reinforcement layer 20 is preferably 10 nm or thicker. This allows for efficient blocking of electron injection from multiple pixel electrodes to the photoelectric conversion film 30.

[0025] The photoelectric conversion film 30 is a photoelectric conversion unit in the junction-type solid-state image sensor 100, and generates and multiplies electric charge upon irradiation with light L. The photoelectric conversion film 30 is provided between the electron injection blocking reinforcement layer 20 and the hole injection blocking reinforcement layer 40.

[0026] The photoelectric conversion film 30 may be, for example, a crystalline selenium film. If the thickness of the photoelectric conversion film 30 is 0.1 μm or more, preferably 0.3 μm or more, a junction-type solid-state image sensor 100 that can obtain sufficient sensitivity across the entire visible light range can be realized. Furthermore, if the thickness of the photoelectric conversion film 30 is 5 μm or less, preferably 1 μm or less, it can be formed efficiently, which is preferable from the viewpoint of productivity. If the withstand voltage of the signal readout circuit board 10 is high, the thickness of the photoelectric conversion film 30 can be increased, thereby obtaining a higher magnification ratio.

[0027] The hole injection blocking reinforcement layer 40 has the function of blocking hole injection (leakage current) from the transparent conductive film 50 to the photoelectric conversion film 30. The hole injection blocking reinforcement layer 40 is provided between the transparent conductive film 50 and the photoelectric conversion film 30.

[0028] The hole injection blocking reinforcement layer 40 is preferably formed of a material capable of blocking hole injection from the transparent conductive film 50 to the photoelectric conversion film 30. Examples of such materials include gallium oxide (Ga2O3). The hole injection blocking reinforcement layer 40 is preferably 10 nm or thicker. By satisfying this range, hole injection (leakage current) from the transparent conductive film 50 to the photoelectric conversion film 30 can be efficiently blocked, thereby suppressing the generation of dark current.

[0029] The translucent substrate 60 is preferably formed from a material that is translucent across the entire visible light spectrum. Examples of such materials include single-crystal sapphire, quartz, optical glass, beryllium, acrylic, plastic, optical fiber (FOP), and silicon. In particular, when the translucent substrate 60 is formed from single-crystal sapphire, it is easier to arrange the crystal structure of the photoelectric conversion film 30 made of crystalline selenium, and furthermore, when the transparent conductive film 50 and the hole injection inhibition reinforcement layer 40 are subjected to high-temperature treatment, the crystallization of the transparent conductive film 50 and the hole injection inhibition reinforcement layer 40 can be promoted.

[0030] The translucent substrate 60 is not particularly limited in shape, but may be rectangular, square, trapezoidal, polygonal, circular, or flexible.

[0031] The translucent substrate 60 is not particularly limited in thickness, but is preferably thicker than 0.03 mm and thinner than 30.0 mm. The translucent substrate 60 may be, for example, a thin substrate with a thickness of 1.1 mm.

[0032] As shown in Figures 2A and 2B, the translucent substrate 60 includes a transparent conductive film 50 that connects from the front surface to the image acquisition area 60D on the back surface. The transparent conductive film 50 is electrically connected, for example, to the positive electrode of the power supply 3. By including the transparent conductive film 50 in the translucent substrate 60, the power supply 3 and the transparent conductive film 50 in the image acquisition area 60D can be easily connected without grinding the translucent substrate 60 itself. Furthermore, by including the transparent conductive film 50 in the translucent substrate 60, the power supply 3 and the transparent conductive film 50 can be easily connected even if the translucent substrate 60 is an extremely thin substrate (for example, a thin substrate with a thickness of 1.1 mm).

[0033] The transparent conductive film 50a is provided in a portion of the surface of the translucent substrate 60, on one side of the translucent substrate 60, and in a portion of the back surface of the translucent substrate 60, as shown in Figure 2B. The portion of the surface of the translucent substrate 60 is not particularly limited, but it should be at least a portion with a vertical length of 1 mm or more and a horizontal length of 1 mm or more. The portion of the back surface of the translucent substrate 60 is not particularly limited, but it should be at least a portion with a vertical length of 1 mm or more and a horizontal length of 1 mm or more. It is desirable that the film thickness of the transparent conductive film 50a on the surface of the translucent substrate 60 and the film thickness on the back surface of the translucent substrate 60 be equal.

[0034] The transparent conductive film 50b, for example as shown in Figure 2B, partially overlaps with a portion of the transparent conductive film 50a on the back surface of the translucent substrate 60, and is provided in the image acquisition region 60D on the back surface of the translucent substrate 60. By providing the transparent conductive film 50b so as to be connected to the transparent conductive film 50a, voltage supply from the power supply 3 to the photoelectric conversion film 30 via the transparent conductive film 50 becomes easier, and furthermore, sufficient conductivity in the transparent conductive film 50 can be ensured so as not to adversely affect image acquisition by the junction solid-state image sensor 100 in response to light X.

[0035] The image acquisition area 60D may be set such that, for example, its vertical length is longer than the film deposition surface of the photoelectric conversion film 30, and its horizontal length is shorter than the film deposition surface of the photoelectric conversion film 30. For example, the image acquisition area 60D may have a vertical length of 13.95 mm and a horizontal length of 25.0 mm. By forming the transparent conductive film 50b in the image acquisition area 60D set in this way, the generation of leakage current to the signal readout circuit board 10 can be prevented.

[0036] The transparent conductive film 50 is preferably formed from a material that is translucent and has excellent conductivity. Examples of such materials include ITO (indium tin oxide), IZO (zinc tin oxide), AZO (aluminum-doped zinc oxide), SnO2 (tin oxide), FTO (fluorine-doped tin oxide), Au (gold), Al (aluminum), Cu (copper), Mo (molybdenum), and Zn (zinc). The thickness of the transparent conductive film 50 is not particularly limited, but considering the light transmittance and resistance, it is preferably between 5 nm and 50 nm.

[0037] The junction-type solid-state image sensor 100 may be configured such that wiring is attached between the N portion of the transparent conductive film 50 and the voltage supply unit 11 using a conductive paste or the like, thereby electrically connecting the transparent conductive film 50 and the voltage supply unit 11, and image acquisition is realized by the signal output 7. Alternatively, power may be supplied from the power supply 3 to the N portion of the transparent conductive film 50, and image acquisition is realized by the signal output 7.

[0038] Figure 3 is an external photograph showing an example of the configuration of the translucent substrate 60 according to this embodiment.

[0039] The translucent substrate 60 may, for example, have a vertical length of 13.0 mm, a horizontal length of 20.0 mm, and a thickness of 0.1 mm. The transparent conductive film 50a may, for example, have a vertical length of 1.0 mm, a horizontal length of 20.0 mm, and a cross-sectional thickness of 0.1 mm. The transparent conductive film 50b may, for example, have a vertical length of 11.3 mm and a horizontal length of 18.1 mm. However, the transparent conductive film 50a must be in electrical contact with the transparent conductive film 50b at some point on the light-transmitting substrate 60. The sizes of the translucent substrate 60 and the transparent conductive film 50b can be appropriately set depending on the solid-state image sensor being fabricated.

[0040] As shown in Figure 3, it is actually possible to manufacture a translucent substrate 60 having a transparent conductive film 50 that connects from the front surface to the image acquisition area 60D on the back surface. This makes it possible to easily connect the power supply 3 and the transparent conductive film 50 without having to spend time and money processing the translucent substrate, such as tapering the edges of the translucent substrate as in the conventional method.

[0041] The bonded solid-state image sensor 100 according to this embodiment includes a transparent conductive film 50 on the translucent substrate 60 that connects from the front surface to the image acquisition area 60D on the back surface. This makes it possible to realize a translucent substrate 60 for the bonded solid-state image sensor 100 that reduces manufacturing effort and cost. Furthermore, it is possible to realize a particularly useful translucent substrate 60 when the translucent substrate is an extremely thin substrate and tapering the substrate itself is difficult.

[0042] <Method for manufacturing a light-transmitting substrate> Referring to Figures 4A to 5B, an example of a method for manufacturing the light-transmitting substrate 60 used in the bonded solid-state image sensor 100 according to this embodiment will be described.

[0043] A method for manufacturing a translucent substrate 60 used in a junction-type solid-state image sensor 100 includes the steps of: (S101) applying a first sputtering to the surface, sides, and back surface of the translucent substrate 60 to form a first transparent conductive film (transparent conductive film 50a') that connects from the surface to the back surface; (S102) applying a second sputtering to the first transparent conductive film to form a second transparent conductive film (transparent conductive film 50a) that connects from the surface to the back surface; and (S103) applying a third sputtering to the image acquisition area 60D on the back surface to form a third transparent conductive film (transparent conductive film 50b) that partially overlaps with the second transparent conductive film.

[0044] The details of each process will be explained sequentially below. Note that the same reference number is assigned to the same component, and the descriptions of the material, film thickness, etc. of each component are as previously stated, so redundant explanations will be omitted.

[0045] In step S101, the worker loosens the fixing screws 303a and 303b to load the translucent substrate 60 into the fixing jig 302 provided on the turntable 301, and then tightens the fixing screws 303a and 303b to fix the translucent substrate 60 to the fixing jig 302 (see Figure 5A). By adjusting the fixing screws 303a and 303b, the translucent substrate 60 can be loaded into or fixed to the fixing jig 302 even if the thickness of the translucent substrate 60 changes, and the substrate is then placed on the turntable 301. The translucent substrate 60 may be, for example, a single-crystal sapphire substrate with a vertical length of 13.0 mm, a horizontal length of 20.0 mm, and a thickness of 0.1 mm, as shown in Figure 3.

[0046] The turntable 301 is not particularly limited in size or shape, but for example, it may be circular with a radius of 200 mm. The turntable 301 rotates in the direction of the arrow shown in Figure 5B.

[0047] The fixing jig 302 is preferably made of a material such as Teflon®, plastic, acrylic, stainless steel, or aluminum. If the fixing jig 302 is made of Teflon, for example, it is possible to suppress scratches or chips on the translucent substrate 60.

[0048] Next, the operator places the ITO target 304, which will serve as the material source, in a circular region with a diameter a (e.g., 76.2 mm) offset by a distance b (e.g., 85.0 mm) from the center of the turntable 301, and places the translucent substrate 60 on a track with a radius c (e.g., 60 mm) that is off-center from the center of the circular region (see Figure 5B). Since the ITO target 304 has a magnet installed on its bottom, by placing the translucent substrate 60 on such a track, more ITO can be attached to the translucent substrate 60 on the inner circumference side of the turntable 301 than to the translucent substrate 60 on the outer circumference side of the turntable 301. In other words, by simply orienting the side surface of the translucent substrate 60 towards the ITO target 304 without tilting the translucent substrate 60, the ITO target 304 can be attached to the surface or back surface of the translucent substrate 60 such that the thickness of the ITO film formed on the translucent substrate 60 on the inner circumference side of the turntable 301 is thicker than the thickness of the ITO film formed on the outer circumference side of the turntable 301, as well as on the side surface of the translucent substrate 60.

[0049] Next, the operator uses a sputtering device to perform a first sputtering operation on the front, side, and back surfaces of the translucent substrate 60. This forms a transparent conductive film 50a' that connects from the front surface to the back surface (see Figure 4B).

[0050] For example, the film deposition conditions are: oxygen gas partial pressure: 7.6 × 10⁻⁶ -3 Pa, partial pressure of argon gas: 6.0 × 10⁻⁶ -1 The deposition time may be Pa and 12 minutes. The thickness of the transparent conductive film 50a' on the surface of the translucent substrate 60 is greater than the thickness on the back surface of the translucent substrate 60. Also, the thickness of the transparent conductive film 50a' on the side surface of the translucent substrate 60 is, for example, about 30 nm.

[0051] In step S102, the worker rotates the fixing jig 302 supporting the translucent substrate 60 by 180 degrees, and then performs a second sputtering on the transparent conductive film 50a' using a sputtering device. This forms a transparent conductive film 50a that connects from the front surface to the back surface (see Figure 4C).

[0052] For example, the film deposition conditions are: oxygen gas partial pressure: 7.6 × 10⁻⁶ -3 Pa, partial pressure of argon gas: 6.0 × 10⁻⁶ -1 The film deposition time may be Pa and 12 minutes. The thickness of the transparent conductive film 50a on the surface of the translucent substrate 60 is equal to the thickness of the transparent conductive film on the back surface of the translucent substrate 60. The thickness of the transparent conductive film 50a on the side surface of the translucent substrate 60 is, for example, about 60 nm.

[0053] In step S103, the operator uses a sputtering device to perform a third sputtering operation on the image acquisition area 60D on the back surface of the translucent substrate 60. This forms a transparent conductive film 50b that partially overlaps with the transparent conductive film 50a (see Figure 4D).

[0054] For example, the film deposition conditions are: oxygen gas partial pressure: 7.6 × 10⁻⁶ -3 Pa, partial pressure of argon gas: 6.0 × 10⁻⁶ -1 The film deposition time may be Pa and 1 minute. The thickness of the transparent conductive film 50b on the back surface of the translucent substrate 60 is, for example, about 10 nm.

[0055] By manufacturing a translucent substrate 60 having a transparent conductive film 50 that connects from the front surface to the image acquisition area 60D on the back surface using the manufacturing method described above, a junction-type solid-state image sensor 100 can be realized that facilitates the connection between the power supply 3 and the transparent conductive film 50 while reducing manufacturing effort and cost. In steps S101 and S102, the surface on which the thick transparent conductive film is formed first may be either the front surface or the back surface.

[0056] <Verification> Referring to Figures 6A and 6B, an example of measurement results for the resistance values ​​of transparent conductive films 50a', 50a, and 50b will be described.

[0057] A probe (tip diameter φ=0.2mm) was used to measure the resistance value with a tester when the distance between two measurement points was 2mm. A smaller resistance value indicates better conductivity of the transparent conductive film, while a larger resistance value indicates poor conductivity.

[0058] The resistance of the transparent conductive film 50a' on the back surface, i.e., the resistance at measurement point AB, was 1.5 kΩ. The resistance of the transparent conductive film 50a' on the surface, i.e., the resistance at measurement point CD, was 2.0 MΩ. The resistance of the transparent conductive film 50a' on the side surface, i.e., the resistance at measurement point EF, was 1.2 kΩ. The resistance of the transparent conductive film 50a' between the back and front surfaces, i.e., the resistance at measurement point GH, was 500 kΩ.

[0059] The resistance of the transparent conductive film 50a on the back surface, i.e., the resistance at measurement point AB, was 1.5 kΩ. The resistance of the transparent conductive film 50a on the surface, i.e., the resistance at measurement point CD, was 3.5 kΩ. The resistance of the transparent conductive film 50a on the side surface, i.e., the resistance at measurement point EF, was 600Ω. The resistance of the transparent conductive film 50a between the back and front surfaces, i.e., the resistance at measurement point GH, was 3 kΩ.

[0060] The resistance of the transparent conductive film 50b between the back and front surfaces, i.e., the resistance at measurement point GH, was 3 kΩ.

[0061] The measurement results showed that the resistance value at measurement point GH after three sputtering passes was 5 MΩ or less. This indicates that the video output of the junction-type solid-state image sensor 100 is not problematic. Furthermore, the resistance values ​​at measurement points AB, CD, EF, and GH after each sputtering pass were all 3 MΩ or less. This indicates that the junction-type solid-state image sensor 100 is expected to operate well.

[0062] <Manufacturing method for bonded solid-state image sensors> An example of a manufacturing method for the bonded solid-state image sensor 100 according to this embodiment will be briefly described.

[0063] First, on the signal readout circuit board 10 (for example, 25.0 mm vertically x 31.2 mm horizontally) assembled in package 1, for example, a substrate rotation type resistance heating deposition method (vacuum level: 1.0 x 10) is used. -5 A first amorphous selenium film with a thickness of 150 nm is formed by sputtering (Pa). Then, as described above, a hole injection inhibition strengthening layer 40 consisting of a gallium oxide film with a thickness of 20 nm is formed on a translucent substrate 60 having a transparent conductive film 50 (50a, 50b) formed by sputtering three times, first sputtering, second sputtering, and third sputtering, for example, by sputtering, pulsed laser deposition, or vacuum deposition, and the transparent conductive film 50 and the gallium oxide film are subjected to high-temperature treatment at 800 degrees Celsius for 60 minutes in an oxygen atmosphere to grow crystals. Then, on the gallium oxide film, for example, a substrate rotation resistance heating deposition method (vacuum degree: 1.0 × 10⁻⁶) is used. -5 A second amorphous selenium film with a thickness of 150 nm is formed by Pa). Then, these amorphous selenium films are bonded by heating and pressurizing, and crystallized to form a photoelectric conversion film 30 made of crystalline selenium. For details of the bonding process between the first amorphous selenium film and the second amorphous selenium film, please refer to Non-Patent Document 1.

[0064] <Variation> In this embodiment, the application of the translucent substrate 60 to a junction-type solid-state image sensor 100 was described as an example, but the applications of the translucent substrate 60 are not limited to this. For example, the translucent substrate 60 may be applied to image tubes, cold cathode image sensors, vacuum tubes, and other vacuum devices.

[0065] Although the embodiments described above are representative examples, it will be apparent to those skilled in the art that many modifications and substitutions are possible within the spirit and scope of this disclosure. Therefore, the present invention should not be construed as being limited by the embodiments described above, and various modifications or changes are possible without departing from the claims. [Explanation of Symbols]

[0066] 1 package 2 Bonding wires 3 Power supply 7. Signal Output 10 Signal readout circuit board 11 Voltage supply unit 20 Electron injection blocking reinforcement layer 30 Photoelectric conversion film 40 Hole injection inhibition reinforcement layer 50,50a´,50a,50b Transparent conductive film 60 Translucent substrate 60D Image Acquisition Area 100 junction type solid-state image sensors

Claims

1. A junction-type solid-state image sensor comprising, in this order, a signal readout circuit board, an electron injection blocking enhancement layer, a photoelectric conversion film, a hole injection blocking enhancement layer, and a light-transmitting substrate, The translucent substrate comprises a transparent conductive film provided in connection with an image acquisition area on the back surface of the translucent substrate that is in contact with the hole injection inhibition reinforcement layer, the side surface of the translucent substrate, and a portion of the surface of the translucent substrate. The transparent conductive film is connected to a power supply for supplying voltage to the photoelectric conversion film. Condensed solid-state image sensor.

2. The transparent conductive film is Formed from one of the following materials: indium tin oxide, zinc tin oxide, tin oxide, gold, aluminum, copper, molybdenum, and zinc. The junctional solid-state image sensor according to claim 1.

3. The light-transmitting substrate is It is made from one of the following materials: single-crystal sapphire, quartz, optical glass, beryllium, acrylic, and plastic. The junctional solid-state image sensor according to claim 1 or 2.

4. The light-transmitting substrate is It can be rectangular, square, trapezoidal, polygonal, circular, or flexible. The junctional solid-state image sensor according to claim 1 or 2.

5. The resistance between the front and back surfaces of the transparent conductive film is 5 MΩ or less. The junctional solid-state image sensor according to claim 1 or 2.

6. A method for manufacturing a translucent substrate used in a junction solid-state image sensor comprising, in this order, a signal readout circuit board, an electron injection blocking reinforcement layer, a photoelectric conversion film, a hole injection blocking reinforcement layer, and a translucent substrate, A step of applying a first sputtering to the surface, side, and back surface of the translucent substrate to form a first transparent conductive film that extends from the surface to the back surface, A step of performing a second sputtering on the first transparent conductive film to form a second transparent conductive film that connects from the surface to the back surface, A step of performing a third sputtering on the image acquisition area on the back surface to form a third transparent conductive film in which a portion overlaps with the second transparent conductive film, A method for manufacturing a light-transmitting substrate containing [the specified material].

7. The first transparent conductive film is formed such that one of its front surface and back surface is thicker than the other. The second transparent conductive film is formed such that the other surface is thicker than the other surface. A method for manufacturing a light-transmitting substrate according to claim 6.

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