Heat treatment apparatus, heat treatment method, and computer storage medium

Abstract

To prevent the occurrence of a defect in a substrate due to a substance generated in a treatment space during heat treatment.SOLUTION: A heat treatment device heating a substrate formed with a coating film comprises: a treatment container that forms a treatment space for accommodating the substrate; a heating unit that heats the substrate accommodated in the treatment space; a gas supply unit that supplies inert gas to the treatment space; an exhaust unit that exhausts air from the treatment space; and a control unit. The control unit performs control to execute: (A) a step of exhausting air from the treatment space without supplying the inert gas to the treatment space until a cross-linking reaction caused by a reaction with oxygen in the coating film advances to a predetermined degree, and heating the substrate in the atmosphere of the inert gas; and (B) a step of, after the (A) step, supplying the inert gas to the treatment space and exhausting air from the treatment space, and heating the substrate in the atmosphere with a lower oxygen concentration than in the (A) step.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a heat treatment apparatus, a heat treatment method, and a computer storage medium.

Background Art

[0002] The heat treatment apparatus disclosed in Patent Document 1 heats a substrate on which a coating film is formed in a processing container, and includes a mounting portion provided in the processing container for mounting the substrate, and a heating portion for heating the substrate mounted on the mounting portion. Further, in Patent Document 1, the processing container has a lid portion constituting a ceiling portion, and an exhaust chamber is formed between an upper surface portion and a lower surface portion of the lid portion. An outer peripheral exhaust port communicating with the exhaust chamber is formed in a peripheral portion of the lower surface portion of the lid portion. A central exhaust port is formed in a central portion of the lower surface portion of the lid surface portion. One end side of a central exhaust pipe provided so as to penetrate the exhaust chamber is connected to the central exhaust port.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure suppresses the occurrence of defects on the substrate due to substances generated in the processing space during the heat treatment.

Means for Solving the Problems

[0005] One aspect of the present disclosure is Contains materials that exhibit crosslinking reactions with oxygen. a heat treatment apparatus for heating a substrate on which a coating film is formed, including a processing container forming a processing space for accommodating the substrate, a heating portion for heating the substrate accommodated in the processing space, and a gas supply portion for supplying an inert gas to the processing space. Another gas supply unit that supplies oxygen-containing gas into the processing container,The system comprises an exhaust unit for exhausting the processing space and a control unit, wherein the control unit refrains from supplying inert gas to the processing space until the crosslinking reaction by reaction with oxygen in the coated film reaches a predetermined degree of progress. , supply of oxygen-containing gas to the processing space and (B) The control system is configured to perform the following steps: (A) exhaust the processing space and heat the substrate in an atmosphere of oxygen-containing gas; and (B) after step (A), supply an inert gas to the processing space and exhaust the processing space, and heat the substrate in an atmosphere with a lower oxygen concentration than in step (A). The (B) step further comprises a modification unit for changing the volume of the processing space, and the (B) step includes (C) a step of making the volume of the processing space smaller than that of the (A) step and replacing the oxygen-containing gas in the processing space with an inert gas, and (D) a step of heating the substrate in an inert gas atmosphere. cormorant. [Effects of the Invention]

[0006] According to this disclosure, it is possible to suppress the occurrence of defects in the substrate caused by substances generated in the processing space during the heat treatment. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic diagram illustrating the configuration of the heat treatment apparatus according to this embodiment, viewed from the side. [Figure 2] This is an explanatory diagram illustrating the challenges of a comparative example of wafer processing performed using a heat treatment apparatus. [Figure 3] This figure shows examples of the temperature history of the wafer W and the oxygen concentration history in the processing space during the heat treatment included in the wafer processing according to this embodiment. [Figure 4] This is an explanatory diagram of the wafer processing operation according to this embodiment. [Figure 5] This figure shows the height of the lid member relative to the bottom member in each step of another example of wafer processing according to this embodiment. [Figure 6] This figure shows the height of the wafer W relative to the heating plate at the start of the heating process in another example of the wafer processing according to this embodiment. [Figure 7] This figure shows the temperature history of wafer W during the heat treatment in this example. [Figure 8] This figure shows the exhaust configuration of the processing space in another example of wafer processing according to this embodiment. [Figure 9]This figure shows the state of the processing space during the process of completing the heat treatment in another example of wafer processing according to this embodiment. [Figure 10] This is an explanatory diagram of the data used to determine whether the heat treatment has reached a predetermined stage. [Modes for carrying out the invention]

[0008] In the manufacturing process of semiconductor devices, various processing solutions, such as a processing solution for forming a SOC film used as a hard mask, may be applied to the surface of a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). After the application of these processing solutions, i.e., after the formation of the coated film, a heat treatment is performed in which the substrate is heated in a processing container of a heat treatment apparatus.

[0009] Depending on the type of coating film, heating can cause a crosslinking reaction within the coating film, leading to its hardening and the generation of defect-causing substances. These defect-causing substances are those that adhere to the substrate and cause defects. To recover these defect-causing substances, the heat treatment apparatus exhausts the treatment chamber. However, during the heat treatment, these defect-causing substances combine with oxygen in the treatment chamber to generate another, larger defect-causing substance, and even with exhausting the treatment chamber, it may not be possible to completely recover this other defect-causing substance.

[0010] Therefore, the technology described herein suppresses the occurrence of defects on the substrate caused by substances generated inside the processing container (specifically, within the processing space formed by the processing container) during the heat treatment.

[0011] Hereinafter, the heat treatment apparatus and heat treatment method according to this embodiment will be described with reference to the drawings. In this specification and drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted.

[0012] <Heat treatment equipment> Figure 1 is a schematic diagram illustrating the configuration of the heat treatment apparatus according to this embodiment, viewed from the side.

[0013] As shown in FIG. 1, the heat treatment apparatus 1 has a processing container 2 that forms a processing space S for accommodating a wafer W as a substrate. This processing container 2 has a bottom member 3 having a hot plate 11 and a lid member 4 that includes a ceiling portion 4a facing the placement surface 11a of the bottom member 3 described later and forms the processing space S between the bottom member 3. Further, the processing container 2 is provided in a housing (not shown).

[0014] The bottom member 3 is supported on a base 5 of the housing (not shown) via a support member 6. The bottom member 3 includes a support base 12 formed of a flat cylindrical body having a recess formed inside the peripheral edge portion 12a. A hot plate 11 is provided in the recess of the support base 12.

[0015] The upper surface 11a of the hot plate 11 is a placement surface on which the wafer W is placed. A plurality of gap pins (not shown) for supporting the lower surface of the wafer W may be provided on the upper surface 11a (hereinafter, the placement surface 11a) of the hot plate 11. Further, a heater 13 as a heating unit for heating the wafer W is provided in the hot plate 11. The heater 13 can heat the wafer W by heating the placement surface 11a. Specifically, the heater 13 can heat the wafer W placed on the placement surface 11a and the wafer W located at a position separated from the placement surface 11a by heating the placement surface 11a. The heater 13 is controlled by a control unit 100 described later.

[0016] The ceiling portion 4a of the lid member 4 is formed in a disk shape having a diameter larger than that of the bottom member 3. Further, the lid member 4 has a side wall portion 4b that closes the periphery of the gap between the bottom member 3 and the ceiling portion 4a and forms the processing space S. The side wall portion 4b is formed in an annular shape in plan view.

[0017] The lid member 4 moves up and down by a lifting mechanism 20. The lifting mechanism 20 has a drive source such as a motor that generates the driving force for raising and lowering the lid member 4, that is, the driving force for adjusting the height of the lid member 4 relative to the bottom member 3, and is provided, for example, on the base 5. This lifting mechanism 20 is controlled by a control unit 100, which will be described later. The lifting mechanism 20 can form a processing space S by lowering the lid member 4. The lifting mechanism 20 can also open the processing space S by raising the lid member 4. Furthermore, the lifting mechanism 20 can change the volume of the processing space S by raising and lowering the lid member 4, that is, by adjusting the height of the lid member 4 relative to the bottom member 3. Thus, the lifting mechanism 20 constitutes an adjustment mechanism for adjusting the height of the lid member 4 relative to the bottom member 3, and also constitutes a modification unit for changing the volume of the processing space S.

[0018] Furthermore, a shower head 30 is provided on the ceiling portion 4a of the lid member 4. The showerhead 30 supplies an oxygen-containing gas, i.e., an oxygen-containing gas, downward from the ceiling portion 4a. The oxygen-containing gas supplied by the showerhead 30 is, for example, dry air. Furthermore, the showerhead 30 supplies an oxygen-free inert gas downward from the ceiling 4a. The inert gas supplied by the showerhead 30 is, for example, nitrogen gas.

[0019] The shower head 30 has a plurality of discharge holes 31 and a gas distribution space 32.

[0020] Each discharge hole 31 is formed on the lower surface of the shower head 30. The discharge holes 31 are arranged substantially uniformly, for example, in the central part of the lower surface of the shower head 30, excluding the exhaust port 41 which will be described later. The plurality of discharge holes 31 include a first discharge hole located above the peripheral edge of the wafer W on the heating plate 11, and a second discharge hole located above the central part of the wafer W on the heating plate 11.

[0021] The gas distribution space 32 distributes the oxygen-containing gas or inert gas introduced into the showerhead 30 and supplies it to each discharge port 31. The shower head 30 is connected to an introduction pipe 33 for introducing an oxygen-containing gas or an inert gas into the shower head 30.

[0022] A gas source 35 for storing oxygen-containing gas is connected to the inlet pipe 33 via a supply pipe 34. The supply pipe 34 is equipped with a group of supply equipment 36, including on-off valves and flow control valves for controlling the flow of oxygen-containing gas. Furthermore, a gas source 38 for storing inert gas is connected to the inlet pipe 33 via a supply pipe 37. The supply pipe 37 is equipped with a group of supply equipment 39, including on-off valves and flow control valves for controlling the flow of inert gas. The supply devices 36 and 39 are controlled by the control unit 100, which will be described later.

[0023] In the heating apparatus 1, a gas supply unit is configured to supply inert gas to the processing space S by shower head 30, introduction pipe 33, supply pipe 37, and supply equipment group 39, and another gas supply unit is configured to supply oxygen-containing gas to the processing space S by shower head 30, introduction pipe 33, supply pipe 34, and supply equipment group 36.

[0024] Furthermore, the heat treatment apparatus 1 is provided with a central exhaust section 40 and a peripheral exhaust section 50. These central exhaust section 40 and peripheral exhaust section 50 constitute an exhaust section that exhausts the processing space S.

[0025] The central exhaust unit 40 exhausts the processing space S from a position above the mounting surface 11a, corresponding to a position near the center of the wafer W on the mounting surface 11a (the central position in the example shown in the figure). The central exhaust unit 40 has an exhaust port 41. The exhaust port 41 is located near the center of the lower surface of the shower head 30 (the central position in the example shown in the figure) and opens downwards. The central exhaust unit 40 exhausts the processing space S through this exhaust port 41.

[0026] Furthermore, the central exhaust section 40 has a central exhaust passage 42 formed to extend upward from the exhaust port 41. An exhaust device 44, such as a vacuum pump, is connected to the central exhaust passage 42 via an exhaust pipe 43. The exhaust pipe 43 is equipped with an exhaust equipment group 45 that includes valves for adjusting the exhaust volume. The exhaust device 44 and the exhaust equipment group 45 are controlled by a control unit 100, which will be described later.

[0027] The peripheral exhaust section 50 exhausts the processing space S from a position above the mounting surface 11a, near the peripheral edge of the wafer W on the mounting surface 11a (in the example shown, slightly outside the peripheral edge of the wafer W). The peripheral exhaust section 50 has an exhaust port 51. The exhaust port 51 opens downward from the lower surface of the ceiling section 4a, surrounding the outer circumference of the shower head 30. The exhaust port 51 may consist of multiple exhaust holes arranged along the outer circumference of the shower head 30. The peripheral exhaust section 50 exhausts the processing space S through this exhaust port 51.

[0028] Furthermore, the peripheral exhaust section 50 has a peripheral exhaust passage 52 that leads to the exhaust port 51. An exhaust device 54, such as a vacuum pump, is connected to the peripheral exhaust passage 52 via an exhaust pipe 53. The exhaust pipe 53 is equipped with an exhaust device group 55 that includes valves for adjusting the exhaust volume. The exhaust device 54 and the exhaust device group 55 are controlled by a control unit 100, which will be described later.

[0029] Furthermore, the ceiling section 4a is configured to be heated. For example, the ceiling section 4a has a built-in heater (not shown) that heats the ceiling section 4a. This heater is controlled by the control unit 100 described later, and the ceiling section 4a (specifically, for example, the shower head 30) is adjusted to a predetermined temperature.

[0030] Furthermore, the heating apparatus 1 is provided with a lifting mechanism 60 for raising and lowering the wafer W below the bottom member 3. The lifting mechanism 60 has lifting pins 61 that serve as transfer members for transferring the wafer W to and from a transfer mechanism (not shown) located outside the processing container 2, and these pins are provided so as to penetrate the support base 12 and the heating plate 11. For example, at least three lifting pins 61 are provided at equal intervals in the circumferential direction of the heating plate 11.

[0031] The lifting pin 61 is raised and lowered by a lifting mechanism 62 and is configured to protrude above the heating plate 11 when raised. The lifting mechanism 62 has a drive source such as a motor that generates the driving force for raising and lowering the lifting pin 61, and is provided, for example, on the base 5. By raising and lowering the lifting pin 61, the height of the wafer W supported by the lifting pin 61 relative to the heating plate 11 can be adjusted. This lifting mechanism 62 is controlled by a control unit 100, which will be described later. In this way, the lifting mechanism 60 constitutes an adjustment mechanism for adjusting the height of the wafer W relative to the heating plate 11.

[0032] The heat treatment apparatus 1 described above includes a control unit 100. The control unit 100 is a computer equipped with, for example, a processor such as a CPU and memory, and has a storage unit 101. The storage unit 101 stores, for example, a program that controls various operations of the heat treatment apparatus 1, which will be described later. The program may have been recorded on a storage medium H that is readable by the computer and installed from the storage medium H to the control unit 100. The storage medium H may be for temporary or permanent storage. In addition, part or all of the program may be implemented on dedicated hardware (circuit board).

[0033] <Comparative Examples of Wafer Processing> Next, regarding wafer processing including heat treatment performed using the heat treatment apparatus 1, before describing an example according to this embodiment, a comparative example will be described. Figure 2 is an explanatory diagram illustrating the problems of the comparative example of the wafer processing described above.

[0034] First, the lid member 4 is raised. Then, the wafer W on which the SOC film is formed as a coating film is moved above the heating plate 11 by a transport mechanism (not shown). After that, the lifting pin 61 is raised, and the wafer W is transferred to the lifting pin 61. The height of the wafer W relative to the heating plate 11 when this transfer is completed is called the transfer height.

[0035] Next, as shown in Figure 2(A), the lid member 4 is lowered to form the processing space S, and the lifting pin 61 is lowered to place the wafer W on the mounting surface 11a of the heating plate 11, thereby initiating the heating process.

[0036] During the heat treatment, oxygen-containing gas is supplied from the showerhead 30. The material in the SOC film undergoes a crosslinking reaction with the oxygen in the treatment space S and other areas due to the heat, resulting in hardening of the SOC film, or etching resistance. Furthermore, during the heat treatment, exhaust is performed by the central exhaust section 40 and the peripheral exhaust section 50. This is to recover defect-causing substances released from the SOC film into the processing space S.

[0037] After a predetermined time has elapsed since the wafer W was placed on the mounting surface 11a, the lifting pin 61 rises, lifting the wafer W away from the mounting surface 11a and moving it to the transfer height, and the lid member 4 rises, ending the heating process. Subsequently, the wafer W is moved from above the heating plate 11 by a transport mechanism (not shown). This completes the wafer processing according to the comparative example.

[0038] The wafer processing method used in this comparative example has the following challenges. In other words, when the temperature of the hot plate 11 on which the wafer W is placed is high, for example, 200°C to 450°C, relatively large defect-causing material P1 is scattered from the SOC film due to rapid temperature changes, etc., in the initial stages of the heating process, including immediately after placement, as shown in Figure 2(A). This scattering of defect-causing material P1 subsides as the heating process progresses. However, as the heating process progresses, the defect-causing material P1 scattered in the initial stages combines with fine particles P2 from the material vaporized from the SOC film on the wafer W after the initial stages of the heating process and with oxygen in the processing space S, as shown in Figure 2(B), to form another defect-causing material P3 with a large mass. This defect-causing material P3 is not only large in mass, but is also generated in large quantities. Therefore, exhaust by the central exhaust section 40 and the peripheral exhaust section 50 is not sufficient to recover the defect-causing substance P3. As shown in Figure 2(C), the defect-causing substance P3 may fill the processing space S at the end of the heating process and remain attached to the entire surface of the wafer W after the wafer processing is complete.

[0039] <Example of wafer processing 1> Next, an example of wafer processing, including heat treatment performed using the heat treatment apparatus 1, according to this embodiment will be described. Figure 3 shows an example of the temperature history of the wafer W and the oxygen concentration history in the processing space S during the heat treatment included in the wafer processing according to this embodiment. Figure 4 is an explanatory diagram of the operation of the wafer processing according to this embodiment. Furthermore, all wafer processing according to the embodiment illustrated below is performed under the control of the control unit 100.

[0040] (Step S1: Wafer W is brought in) First, the wafer W is brought into the heating apparatus 1. Specifically, after the lid member 4 is raised, the wafer W on which the SOC film has been formed as a coating film is moved above the hot plate 11 by a transport mechanism (not shown). Then, the lifting pin 61 is raised, and the wafer W is handed over to the lifting pin 61 and raised to the handover height. The handover height is, for example, 30 mm to 50 mm. At this time, the heater 13 is controlled so that the temperature of the mounting surface 11a of the heating plate 11 is, for example, 200 to 450°C. During wafer processing, the heater 13 is controlled so that the temperature of the mounting surface 11a of the heating plate 11 remains constant. In addition, a heater (not shown) for the ceiling portion 4a is controlled so that the temperature of the ceiling portion 4a (specifically the shower head 30) remains constant at a predetermined temperature during wafer processing.

[0041] (Step S2: Start of heat treatment) Next, the wafer W is placed on the mounting surface 11a of the heating plate 11, and the heating process is started. Specifically, the lid member 4 is lowered to form the processing space S. Furthermore, the lifting pin 61 is lowered, and the wafer W is placed on the mounting surface 11a of the heating plate 11. Once the wafer W is placed and the processing space S is formed, the heating process begins. During the heating process, the height of the lid member 4 relative to the bottom member 3, i.e., the volume of the processing space S, remains constant.

[0042] (Step S3: Heating in an oxygen-containing gas atmosphere) Next, oxygen-containing gas is supplied to the processing space S and the processing space S is evacuated. The wafer W is heated in an oxygen-containing gas atmosphere, and any defect-causing substances generated in the processing space S during heating are recovered.

[0043] Specifically, after the wafer W is placed on the mounting surface 11a of the heating plate 11, oxygen-containing gas is supplied from the showerhead 30 to the processing space S. When the wafer W heated by the heating plate 11 exceeds a certain temperature, the material in the SOC film on the wafer W undergoes a crosslinking reaction with oxygen in the processing space S and other heat. In addition to supplying oxygen-containing gas to the processing space S, exhaust is performed by the central exhaust section 40 and the peripheral exhaust section 50. This is to recover defect-causing substances in the processing space S, such as defect-causing substances generated from the SOC film during heating.

[0044] Furthermore, at least one of the following may be performed before the start of the heat treatment: discharge of oxygen-containing gas from the shower head 30, exhaust from the central exhaust section 40, or exhaust from the peripheral exhaust section 50.

[0045] Step S3 is carried out until the crosslinking reaction with oxygen in the SOC film on the wafer W reaches a predetermined degree of progress. Specifically, as shown in Figure 3, step S3 is carried out until the temperature of the wafer W reaches a predetermined temperature Ts that is equal to or higher than the temperature at which the crosslinking reaction in the SOC film is completed.

[0046] The determination of whether the crosslinking reaction with oxygen in the SOC film has progressed to a predetermined degree, that is, whether the temperature of the wafer W has reached a predetermined temperature Ts, is performed, for example, based on whether the time elapsed since the wafer W was placed on the hot plate 11 has exceeded a predetermined time T1. When the predetermined time T1 has exceeded the predetermined time, the control unit 100 determines that the predetermined degree of progress has been reached, that is, that the temperature has reached a predetermined temperature Ts. The "predetermined time T1" used in this determination varies depending on the type of SOC film and is set in advance based on user input via an input unit such as a keyboard or touch panel (not shown), and is stored in the storage unit 101.

[0047] (Step S4: Heating in a low-oxygen atmosphere) Then, after the crosslinking reaction in the SOC film has progressed to a predetermined degree, an inert gas is supplied to the processing space S and the processing space S is evacuated. From step S3, the wafer W is heated in a low-oxygen atmosphere, and any defect-causing substances generated in the processing space S during heating are recovered.

[0048] Step S4 includes, for example, the following steps S4a and S4b.

[0049] (Step S4a: Replacement with inert gas) In this step, the oxygen-containing gas in the processing space S is replaced with an inert gas. Specifically, for example, while exhaust from the central exhaust unit 40 and exhaust from the peripheral exhaust unit 50 are maintained, the supply equipment groups 36 and 39 are controlled, and the gas supplied from the showerhead 30 to the processing space S is switched from an oxygen-containing gas to an inert gas. After the switch, once a predetermined time T2 has elapsed, the oxygen-containing gas in the processing space S is replaced with the inert gas.

[0050] (Step S4b: Heating in an inert gas atmosphere) In this step, which follows step S4a, the wafer W is heated in an inert gas atmosphere. Specifically, for example, following step S4a, an inert gas is supplied from the showerhead 30 to the processing space S, exhaust is performed by the central exhaust unit 40 and the peripheral exhaust unit 50, the wafer W is heated by the hot plate 11 in an inert gas atmosphere, and defect-causing substances generated in the processing space S during heating are recovered.

[0051] (Step S5: End of heat treatment) When a predetermined time T3 has elapsed since step S4b has started, the lifting pin 61 rises, separating the wafer W from the mounting surface 11a, and the lid member 4 rises, opening the processing space S, thus ending the heating process. Specifically, after a predetermined time T3 has elapsed since step S4b began, for example, the supply of inert gas from the showerhead 30 to the processing space S is stopped, and while exhaust by the central exhaust unit 40 and the peripheral exhaust unit 50 is maintained, the lifting pin 61 and the lid member 4 are simultaneously raised. As a result, the wafer W is raised to the transfer height and the processing space S is opened.

[0052] (Step S6: Removal of wafer W) Subsequently, the wafer W is removed from the heating apparatus 1. Specifically, the lifting pin 61 is lowered, the wafer W is handed over to a transport mechanism (not shown), and the wafer W is moved from above the heating plate 11 by the transport mechanism. This completes the wafer processing for this example.

[0053] In the wafer processing described in this example, relatively large defect-causing substances P1 are scattered from the SOC film due to rapid temperature changes during the initial stages of the heating process, including immediately after the wafer W is placed on it (see Figure 2(A)). However, in the wafer processing described in this example, after the crosslinking reaction by oxygen in the SOC film has progressed to a predetermined degree (specifically, after the crosslinking reaction is completed), the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas. Therefore, the defect-causing substances P1 scattered in the initial stages do not combine with the aforementioned fine particles P2 and oxygen in the processing space S, as shown in Figure 4(A), and thus do not change into another defect-causing substance P3 (see Figure 2(B)) which has a larger mass. Instead, a portion of the defect-causing substance P1 volatilizes and shrinks due to heat (in Figure 4(A), P4 is the shrunk defect-causing substance). The shrunk defect-causing substance P4 can be easily recovered by exhaust from the central exhaust section 40 and the peripheral exhaust section 50, as shown in Figure 4(B). Therefore, it is possible to suppress the accumulation of the above-mentioned defect-causing substance P3 (see Figure 2(B)) and other defect-causing substances in the processing space S at the end of the heat treatment, and to suppress the retention of defect-causing substances on the entire surface of the wafer W after the wafer processing is complete.

[0054] <Main effects of this embodiment> As described above, the wafer processing example according to this embodiment includes a step (a) in which the processing space S is evacuated without supplying an inert gas until the crosslinking reaction by reaction with oxygen in the coated film on the wafer W progresses to a predetermined degree, and the wafer is heated in an atmosphere of oxygen-containing gas; and a step (b) in which, after step (a), an inert gas is supplied to the processing space S and the processing space is evacuated, and the wafer W is heated in an atmosphere with a lower oxygen concentration than in step (a). Therefore, it is possible to suppress the combination of defect-causing substance P1 scattered from the coated film in the initial stage of the heating process with oxygen in the processing space S to form another defect-causing substance P3 with a larger mass. Accordingly, according to this embodiment, it is possible to suppress the occurrence of defects on the wafer W caused by substances generated in the processing space S during the heating process.

[0055] Furthermore, in the wafer processing example according to this embodiment, step (a) is carried out until the temperature of the wafer W reaches a predetermined temperature Ts that is equal to or higher than the temperature at which the crosslinking reaction in the coated film on the wafer W is completed. Therefore, it is possible to suppress insufficient hardness of the coated film.

[0056] <Example 2 of wafer processing> Figure 5 shows the height of the lid member 4 relative to the bottom member 3 in each step of another example of wafer processing according to this embodiment. In the above example, the height of the lid member 4 relative to the bottom member 3, i.e., the volume of the processing space S, remained constant during the heat treatment. Alternatively, in the inert gas replacement step S4a, the volume of the processing space S may be reduced compared to the heating step in step S3 in an oxygen-containing gas atmosphere. In this case, in the heating step in step S4b in an inert gas atmosphere, the volume of the processing space S may be increased compared to the inert gas replacement step S4a.

[0057] Specifically, as shown in Figure 5(A), the heating step in step S3 in an oxygen-containing gas atmosphere may be performed with the height of the lid member 4 relative to the bottom member 3 set to a first height H1, and as shown in Figure 5(B), the replacement step in step S4a with an inert gas may be performed with the height of the lid member 4 relative to the bottom member 3 set to a second height H2, which is lower than the first height H1. Alternatively, in this case, the heating step in step S4b in an inert gas atmosphere may be performed with the height of the lid member 4 relative to the bottom member 3 set to a third height H3, which is higher than the second height H2. The third height H3 may be the same as or different from the first height H1.

[0058] As in this example, by reducing the volume of the processing space S in the substitution step S4a, the time required to replace the atmosphere in the processing space S with an inert gas can be shortened. As a result, the generation of the aforementioned large-mass defect-causing substance P3 can be suppressed.

[0059] Furthermore, in the heating process in an inert gas atmosphere in step S4b, by increasing the volume of the processing space S as described above, that is, by increasing the height of the lid member 4 relative to the bottom member 3, the airflow directly above the wafer W can be made more uniform across the wafer surface. In addition, it is possible to suppress the adhesion and contamination of the lid member 4 (specifically the shower head 30) by defect-causing substances.

[0060] In the heating step S4b in an inert gas atmosphere, if the volume of the processing space S is larger than in the inert gas replacement step S4a, as described above, the flow rate of the inert gas supplied to the processing space S may be increased in step S4a and relatively decreased in step S4b. This makes it possible to reduce the amount of inert gas consumed throughout the entire heating process while shortening the time required to replace the atmosphere in the processing space S with inert gas in step S4a.

[0061] <Example 3 of wafer processing> In the above example, during the heat treatment, exhaust was performed by both the central exhaust unit 40 and the peripheral exhaust unit 50; that is, both the central exhaust unit 40 and the peripheral exhaust unit 50 were turned ON. Alternatively, during the heat treatment, only the exhaust by the peripheral exhaust unit 50 may be kept ON at all times, and the exhaust by the central exhaust unit 40 may be turned OFF during the heating process in the oxygen-containing gas atmosphere in step S3, and turned ON from the heating process in the low-oxygen concentration atmosphere in step S4. This can suppress the following: In the first half of the heat treatment, when the fluidity of the coated film is high, the exhaust by the central exhaust unit 40 causes the coated film to thicken in the center of the wafer W, and as a result, it is possible to suppress the thickening of the coated film in the center of the wafer W even after the heat treatment.

[0062] Furthermore, if the exhaust from the central exhaust unit 40 is turned ON from the heating process in a low oxygen concentration atmosphere in step S4, it may also be turned ON from the replacement process with inert gas in step S4a. This makes it possible to shorten the time required to replace the atmosphere in the processing space S with inert gas in step S4a.

[0063] If the exhaust from the central exhaust unit 40 is turned ON from the inert gas replacement step S4a, and the volume of the processing space S is changed as in Example 2 above, the following may be done. In other words, during the inert gas replacement process in step S4a, when the height of the lid member 4 relative to the bottom member 3 is at the second height H2, the exhaust from the central exhaust unit 40 is turned ON. Subsequently, during the period when the height of the lid member 4 relative to the bottom member 3 is increased from the second height H2 to the third height H3, that is, during the period when the volume of the processing space S is increased, the exhaust from the central exhaust unit 40 may be turned OFF at least initially. This makes it possible to suppress the temperature drop of the processing space S due to adiabatic expansion during the period when the volume of the processing space S is increased, and as a result, it is possible to suppress the generation of defect-causing substances due to the temperature drop of the processing space S.

[0064] <Example 4 of wafer processing> Figure 6 shows the height of the wafer W relative to the heating plate 11 at the start of the heating process in another example of the wafer processing according to this embodiment. Figure 7 shows the temperature history of the wafer W during the heating process in this example. In the above example, in step S2, the wafer W was placed on the mounting surface 11a of the heating plate 11 and the heating process was started. Alternatively, in step S2, as shown in Figure 6, the height of the wafer W relative to the heating plate 11 may be set to a predetermined height, i.e., a first height H11, which is a predetermined distance from the heating plate 11, and the heating process may be started.

[0065] Specifically, the lid member 4 is lowered to form the processing space S. Furthermore, simultaneously with or after the lid member 4 descends, the lifting pin 61 is lowered, and the height of the wafer W relative to the heating plate 11 is set to a first height H11, which is different from and lower than the transfer height Hd. When the height of the wafer W relative to the heating plate 11 is set to the first height H11 and the processing space S is formed, the heating process begins. The first height H11 is, for example, 2 mm to 10 mm, and is set in advance and stored in the storage unit 101.

[0066] In this example, during heating in an oxygen-containing gas atmosphere in step S3, for example, the wafer W is first heated to a first height H1 (step S3a). Specifically, the height of the wafer W relative to the heating plate 11 is maintained at a first height H11, and oxygen-containing gas is supplied from the showerhead 30 to the processing space S.

[0067] Step S3a is carried out until the heat treatment reaches a predetermined degree of progress. Specifically, as shown in Figure 7, step S3a is carried out until the temperature of the wafer W reaches a predetermined temperature Tt that is slightly lower than the temperature at which the crosslinking reaction with oxygen in the SOC film begins.

[0068] The determination of whether the heating process has progressed to a predetermined degree, that is, whether the temperature of the wafer W has reached a predetermined temperature Tt, is made, for example, based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to a first height H11 has exceeded a predetermined time T11. The control unit 100 determines that the process has progressed to a predetermined degree, that is, that the temperature has reached a predetermined temperature Tt, when the predetermined time T11 has exceeded. The "predetermined time T11" used in this determination varies depending on the type of SOC film and is set in advance based on user input via an input unit such as a keyboard or touch panel (not shown), and stored in the storage unit 101. The total time T12 of the heating time in step S3b and the heating time in step S4 described later is, for example, 30 seconds to 120 seconds, and the heating time in step S3a, that is, the predetermined time T11, is, for example, 0.5 to 1.5 times the total time T12.

[0069] Then, after the heat treatment has progressed to a predetermined stage, the wafer W is lowered. Specifically, the lifting pin 61 is lowered, and the wafer W is placed on the mounting surface 11a of the heating plate 11.

[0070] Next, the wafer W is heated while placed on the heating plate 11 (step S3b). Specifically, the wafer W is maintained in a state where it is placed on the hot plate 11, and oxygen-containing gas is supplied from the shower head 30 to the processing space S.

[0071] After step S3b, heating in a low-oxygen atmosphere as in step S4 is performed.

[0072] In the wafer processing described in this example, the wafer W is heated to a first height H11 and then placed on a hot plate 11. Therefore, the temperature change of the wafer W immediately after the start of the heating process and the temperature change of the wafer W immediately after being placed on the hot plate 11 are relatively gradual. Consequently, the wafer processing described in this example can suppress the scattering of defect-causing substance P1 due to rapid temperature changes in the initial stages of the heating process. Thus, the generation of another defect-causing substance P3, which has a larger mass and can be produced by the reaction of the defect-causing substance P1 with oxygen, can also be suppressed.

[0073] In this example, both the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 may be turned ON in both step S3a and step S3b.

[0074] Alternatively, the exhaust from the peripheral exhaust unit 50 may be kept ON during wafer processing, while the exhaust from the central exhaust unit 40 may be kept OFF until the end of step S3a, and then switched from OFF to ON in step S3b. This makes it possible to suppress the thickening of the coating film in the central part of the wafer W after heat treatment.

[0075] Specifically, the timing at which the exhaust from the central exhaust unit 40 is switched from OFF to ON is, for example, immediately after the start of heating in step S3a (i.e., immediately after the wafer W is placed on the hot plate 11). Alternatively, this timing may be after a predetermined time T13 has elapsed since the start of heating in step S3a (i.e., since the wafer W was placed on the hot plate 11). This is because, depending on the type of coating film and the heating time at the first height H1, heating at the first height H1 alone may not be sufficient to reduce the fluidity of the coating film to a degree that is unaffected by the exhaust from the central exhaust unit 40. The predetermined time T13 is, for example, 2 seconds or more and 10 seconds or less.

[0076] <Wafer Processing Example 5> In the wafer processing example 4 described above, heating in an oxygen-containing gas atmosphere in step S3 was started with the wafer W at a first height H11, which is a predetermined distance from the heating plate 11, and the wafer W was placed on the heating plate 11 during the heating process. Alternatively, the entire heating process in an oxygen-containing gas atmosphere in step S3 may be performed with the wafer W at the first height H11, and the wafer W may be placed on the heating plate 11 during the subsequent step S4, which is included in heating in a low oxygen concentration atmosphere, and involves replacing the oxygen-containing gas in the processing space S with an inert gas. This wafer processing method also suppresses the scattering of defect-causing substance P1 due to rapid temperature changes in the initial stages of the heating process. As a result, the generation of another defect-causing substance P3, which has a larger mass and can be produced by the reaction of the defect-causing substance P1 with oxygen, can also be suppressed.

[0077] In this example, both the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 may be turned ON in both step S3 and step S4.

[0078] Alternatively, the exhaust from the peripheral exhaust section 50 may be kept ON from step S3, while the exhaust from the central exhaust section 40 may be kept OFF in step S3 and switched from OFF to ON in step S4. This makes it possible to suppress the thickening of the coating film in the central part of the wafer W after the heat treatment.

[0079] In the wafer processing examples 4 and 5 described above, the wafer W was heated to a first height H1 and then heated while placed on the heating plate 11. The height of the wafer W relative to the heating plate 11 after heating to the first height H1 is not limited to the height at which it is placed on the heating plate 11, but can be any height that brings it closer to the heating plate 11 than the first height H1. Furthermore, in the wafer processing examples 1 to 3 described above, the wafer W was heated while placed on the heating plate 11. Alternatively, the wafer W may be heated while separated from the heating plate 11.

[0080] (Example 6 of wafer processing) Figure 8 shows the exhaust configuration of the processing space S in another example of wafer processing according to this embodiment. In the above example, in the step S5 process to complete the heat treatment, the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 were kept ON while the lid member 4 was raised, opening the processing space S. Alternatively, in the step S5 process to complete the heat treatment, as shown in Figure 8, the exhaust from the central exhaust section 40 may be kept ON while the exhaust from the peripheral exhaust section 50 is turned OFF, and then, after a predetermined time T14 has elapsed, the lid member 4 may be raised, opening the processing space S. This prevents the defect-causing substance from leaking out of the processing container 2 through the gap between the bottom member 3 and the lid member 4 when the processing space S is opened.

[0081] (Example 7 of wafer processing) Figure 9 shows the state of the processing space S at the end of the heating process in step S5 in another example of wafer processing according to this embodiment. In the wafer processing example 1 described above, in the step S5 process to complete the heating process, the lifting pin 61 is raised, i.e., the wafer W is raised and the lid member 4 is raised, while the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 are kept ON. The wafer W is raised and the processing space S is opened. Alternatively, in the step S6 process to complete the heating process, as shown in Figure 9, first, only the lifting pin 61 is raised while the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 are kept ON. The height of the wafer W relative to the heating plate 11 is set to the second height H12, and the processing space S is left formed. Then, after a predetermined time T15 has elapsed, the lifting pin 61 is raised again and the lid member 4 is raised simultaneously, the wafer W is raised to the transfer height Hd and the processing space S is opened. Note that the first height H11 and the second height H12 may be the same or different.

[0082] The second height H12 is set in advance, similar to the first height H11, and stored in the memory unit 101. Furthermore, the second height H12 may be calculated and determined in advance by the control unit 100 and stored in the storage unit 101, as follows. That is, the control unit 100 may obtain the detection result of the amount of warpage of the wafer W to be processed from an external detection device (not shown), and based on the above detection result, the second height H12 may be calculated and determined in advance and stored in the storage unit 101. The above external detection device is, for example, a known device that images the wafer W from the side and detects the amount of warpage of the wafer W from the imaging result.

[0083] For example, the control unit 100 calculates and determines the second height H12 from the detected amount of warpage of the wafer W to be processed, as follows. In other words, the control unit 100 calculates the sum of the acquired wafer W curvature Wp and the default value H120 of the second height H12 stored in the storage unit 101, and the result is determined to be the actual second height H12 (=Wp+H120). As a result, the height H13 of the peripheral edge of the wafer W relative to the lower end of the peripheral edge of the lid member 4 becomes constant regardless of the amount of curvature of the wafer W. If the height H13 of the peripheral edge of the wafer W relative to the lower end of the peripheral edge of the lid member 4 is different, the airflow that flows under the peripheral edge of the lid member 4 and onto the surface of the wafer W will also be different when the lifting pin 61 and the lid member 4 rise simultaneously and the processing space S is opened. Specifically, when the lifting pin 61 and the lid member 4 rise simultaneously and the processing space S is opened, if the height H13 is large, the airflow that flows onto the surface of the wafer W will be small, and if the height H13 is small, the airflow that flows onto the surface of the wafer W will be large. Therefore, by keeping the height H13 of the peripheral edge of the wafer W relative to the lower end of the peripheral edge of the lid member 4 constant regardless of the amount of warping of the wafer W, the airflow that flows onto the surface of the wafer W when the processing space S is opened will also be approximately constant. As a result, the influence of the amount of warping of the wafer W on the heat treatment results can be suppressed.

[0084] Furthermore, in this example, the exhaust configuration of the processing space S in the step S5 heat treatment completion step may be the same as in Example 6 of the wafer processing described above. That is, in the step S5 heat treatment completion step, of the exhaust by the central exhaust section 40 and the exhaust by the peripheral exhaust section 50, the exhaust by the peripheral exhaust section 50 may be turned OFF before the lid member 4 is raised, and then after a predetermined time T14 has elapsed, the lid member 4 is raised and the processing space S is opened.

[0085] (modified version) In the wafer processing example 4 described above, the determination of whether the heating process had progressed to a predetermined degree, that is, whether the temperature of the wafer W had reached a predetermined temperature Tt, was performed based on a predetermined time T11 that was set in advance based on user input via an input unit such as a keyboard or touch panel (not shown).

[0086] The method for determining whether the heat treatment has progressed to a predetermined degree, that is, the method for determining whether the temperature of the wafer W has reached a predetermined temperature Tt, is not limited to this. For example, data D1 showing a relationship R as shown in Figure 10 is stored in the storage unit 101 in advance. The relationship R is the relationship between the temperature of the wafer W and the heating time when the wafer W is heated with the heating plate 11 set to the current set temperature and the height of the wafer W relative to the heating plate 11 set to a preset first height H11. In addition, the predetermined temperature (i.e., the target temperature to be reached by heating at the first height H11) Tt is received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. Then, a determination of whether or not the temperature of the wafer W has reached the predetermined temperature Tt may be made based on the data D1 stored in the storage unit 101. Specifically, first, the control unit 100 may calculate and determine the time T21 required to reach the predetermined temperature Tt based on the data D1 stored in the storage unit 101 and the predetermined temperature Tt. Furthermore, the control unit 100 may determine whether the temperature of the wafer W has reached a predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to a first height H11 has exceeded the above time T21.

[0087] The time T21 required to reach the predetermined temperature Tt, which is determined as information used to determine whether or not the temperature of the wafer W has reached a predetermined temperature Tt, may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) not shown.

[0088] Furthermore, data D2, which shows the relationship R between the temperature of the wafer W and the heating time when the wafer W is heated with the height of the wafer W relative to the heating plate 11 set to a first height H11, for each set temperature of the heating plate 11 and for each height of the wafer W relative to the heating plate 11, may be stored in the storage unit 101 in advance. Then, the determination of whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be performed based on the data D2 stored in the storage unit 101.

[0089] For example, the temperature of the heating plate 11, the predetermined temperature Tt, and the setting value of the first height H11 are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 calculates and determines the time T21 required to reach the predetermined temperature Tt based on this information and the data D2. The control unit 100 then determines whether the temperature of the wafer W has reached the predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to the first height H1 has exceeded the time T21.

[0090] Furthermore, when the wafer W is heated with a height of H11 relative to the heating plate 11, the relationship R between the temperature of the wafer W and the heating time is affected not only by the temperature of the heating plate 11 and the height of the wafer W relative to the heating plate 11, but also by the set temperature of the lid member 4 (specifically, the shower head 30). Therefore, data D3 showing the above relationship R for each temperature of the heating plate 11, each height of the wafer W relative to the heating plate 11, and each temperature of the lid member 4 may be stored in the storage unit 101 in advance. Then, the determination of whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be performed based on the above data D3 stored in the storage unit 101.

[0091] For example, the temperature of the lid member 4, the temperature of the heating plate 11, the predetermined temperature Tt, and the setting value of the first height H11 are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 calculates and determines the time T21 required to reach the predetermined temperature Tt based on this information and the data D2. The control unit 100 then determines whether the temperature of the wafer W has reached the predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to the first height H1 has exceeded the time T21.

[0092] Similar to the example using data D1, in the example using data D2 or data D3, the time T21 required to reach the predetermined temperature Tt, which is determined as information used to determine whether or not the temperature of the wafer W has reached the predetermined temperature Tt, may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) not shown.

[0093] Furthermore, based on the above data D2, candidate information to be used to determine whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be determined. For example, the temperature of the heating plate 11, the set value of the predetermined temperature Tt, and the allowable range of the time T21 required to reach the predetermined temperature Tt are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 then determines candidate combinations of the time T21 and the first height H1 based on this information and the data D2. The determined candidates may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) (not shown).

[0094] Similarly, based on the data D3 described above, candidate information to be used to determine whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be determined. For example, the temperature of the lid member 4, the temperature of the heating plate 11, the set value of the predetermined temperature Tt, and the allowable range of the time T21 required to reach the predetermined temperature Tt are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 then determines candidate combinations of the time T21 and the first height H1 based on this information and the data D2. The determined candidates may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) (not shown).

[0095] Furthermore, the candidate combinations of time T21 and height H1 determined based on the above data D2 or data D3 may be narrowed down based on the detection result of the amount of warpage of the wafer W to be processed, as follows. In other words, if the shape of the wafer W is convex in side view (a shape in which the central part protrudes upward) and the amount of warping of the wafer W is large, the distance to the heating plate 11 at the peripheral edge of the wafer W becomes shorter, resulting in a larger amount of heating, which may impair the in-plane uniformity of the film thickness. For this reason, for example, if the wafer W follows a convex shape in side view and its amount of warping is 500 μm or more, the control unit 100 may narrow down the candidate combinations of time T21 and first height H1 to only those in which the first height H1 is 3 mm or more. The detection result for the amount of warpage of the wafer W to be processed is obtained, for example, from an external detection device (not shown). In addition, information other than the amount of warpage of the wafer W, which is necessary for narrowing down the above combination candidates, is stored in advance in, for example, the storage unit 101.

[0096] Furthermore, the first height H1 may be adjusted based on the detection result of the amount of warpage of the wafer W to be processed, as follows: A base value for the first height H1 may be set, and for example, if the wafer W is convex in side view and its amount of warpage is 500 μm or more, a value greater than the base value for the first height H1 may be applied, and in other cases, the base value may be applied to the first height H1.

[0097] In the above method, the height of the lid member 4 relative to the bottom member 3 was adjusted by raising or lowering the lid member 4, but it may also be adjusted by raising or lowering the lid member 4. In the above method, the height of the wafer W relative to the heating plate 11 was adjusted by raising or lowering the wafer W, but it may also be adjusted by raising or lowering the heating plate 11.

[0098] Although SOC films were given as an example of coated films above, the technology described herein can also be used for other coated films containing materials that exhibit a crosslinking reaction with oxygen (for example, anti-reflective films formed as a layer beneath a resist film).

[0099] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims, the subsequent appendices, or their spirit. For example, the constituent elements of the embodiments described above can be combined in any way that does not impair the effects described above. In addition, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, along with or in lieu of the effects described above.

[0100] Furthermore, the following configurations also fall within the technical scope of this disclosure. [Additional note 1] A heating apparatus for heating a substrate on which a coated film has been formed, A processing container that forms a processing space for housing the substrate, A heating unit for heating the substrate housed in the processing space, A gas supply unit that supplies an inert gas to the processing space, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of heating the substrate in an oxygen-containing gas atmosphere while evacuating the processing space without supplying an inert gas to the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (B) A heating apparatus that controls the process to perform the following steps after step (A): supplying an inert gas to the processing space and exhausting the processing space, and heating the substrate in an atmosphere with a lower oxygen concentration than in step (A). [Additional note 2] The system further includes a modification unit for changing the volume of the processing space, The aforementioned step (B) is, (C) A step of reducing the volume of the processing space to be smaller than that of step (A) and replacing the oxygen-containing gas in the processing space with an inert gas. (D) The heating apparatus according to Appendix 1, comprising the step of heating a substrate in an inert gas atmosphere. [Additional note 3] The heat treatment apparatus according to Appendix 2, wherein the volume of the processing space is greater in step (D) than in step (C). [Additional note 4] The heating apparatus according to Appendix 3, wherein the flow rate of the inert gas supplied to the processing space is greater in step (C) than in step (D). [Additional note 5] The aforementioned processing container is A base member including a mounting surface on which a substrate is placed, and the heating section, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The heat treatment apparatus according to Appendix 2, wherein the modified part changes the volume of the processing space by adjusting the height of the lid member relative to the bottom member. [Additional note 6] The aforementioned processing container is A base member including a mounting surface on which a substrate is placed, and the heating section, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The heat treatment apparatus according to appendix 3 or 4, wherein the modified part changes the volume of the processing space by adjusting the height of the lid member relative to the bottom member. [Additional note 7] The control unit, With the height of the lid member relative to the bottom member set to a first height, perform step (A). The height of the lid member relative to the bottom member is lowered from the first height to the second height, and step (C) is performed. The heating apparatus according to appendix 6, which controls the process to perform step (D) by raising the height of the lid member relative to the bottom member from the second height to the third height. [Additional note 8] The heating apparatus according to any one of claims 1 to 7, further comprising another gas supply unit for supplying oxygen-containing gas into the processing container. [Additional note 9] A heating plate having a mounting surface on which a substrate housed in the processing space is placed, and the heating section, The system further includes an adjustment mechanism for adjusting the height of the substrate relative to the heating plate, The control unit, (E) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (F) A heat treatment apparatus according to any one of the appendices 1 to 8, wherein when the heat treatment has progressed to the predetermined degree, the apparatus controls the process to further perform the step of lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate. [Additional Note 10] The heat treatment apparatus according to Appendix 9, wherein the control unit controls the execution of step (F) during step (A). [Additional Note 11] The heat treatment apparatus according to Appendix 9, wherein the control unit controls the execution of step (F) during the step of replacing the oxygen-containing gas in the processing space with an inert gas, which is included in step (B). [Additional Note 12] The aforementioned exhaust section is A central exhaust section for exhausting the processing space is located above the aforementioned mounting surface, at a position corresponding to a position closer to the center of the substrate on the aforementioned mounting surface, It has a peripheral exhaust section that exhausts the processing space from a position above the mounting surface, corresponding to a position near the peripheral edge of the substrate on the mounting surface described above, The control unit, The exhaust from the central exhaust unit is kept OFF in step (E), and switched ON in step (F). A heat treatment apparatus according to any one of the appendices 9 to 11, which controls the exhaust from the peripheral exhaust section to remain ON from step (E) onwards. [Additional Note 13] The aforementioned processing container is The bottom member including the aforementioned heating plate, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The system further includes another adjustment mechanism for adjusting the height of the lid member relative to the bottom member, The control unit, (G) The heat treatment apparatus according to Appendix 12, wherein, at the end of the heat treatment, the exhaust from the central exhaust unit is kept ON, the exhaust from the peripheral exhaust unit is turned OFF, and then, after a predetermined time has elapsed, the height of the lid member relative to the bottom member is increased to open the processing space. [Additional Note 14] A heat treatment method for heating a substrate on which a coated film has been formed, (a) until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, the processing space containing the substrate is evacuated without supplying an inert gas to the processing space, and the substrate is heated in an atmosphere of oxygen-containing gas; (b) A heat treatment method comprising the steps of supplying an inert gas to the processing space and exhausting the processing space after step (a), and heating the substrate in an atmosphere with a lower oxygen concentration than in step (a). [Additional Note 15] A readable computer storage medium containing a program that operates on a computer of a control unit that controls a heat treatment apparatus, which causes the heat treatment apparatus to perform a heat treatment method for heating a substrate on which a coated film has been formed, The aforementioned heat treatment method is (a) until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, the processing space containing the substrate is evacuated without supplying an inert gas to the processing space, and the substrate is heated in an atmosphere of oxygen-containing gas; (b) A computer storage medium comprising the steps of supplying an inert gas to the processing space and exhausting the processing space after step (a), and heating the substrate in an atmosphere with a lower oxygen concentration than in step (a). [Explanation of Symbols]

[0101] 1 Heat treatment apparatus 2 Processing container 13 Heater 30 shower heads 33 Introductory tube 34 Supply pipe 36 Supply equipment group 40 Central exhaust section 50 Peripheral exhaust section 100 Control Unit S processing space W wafer

Claims

1. A heating apparatus for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, A processing container that forms a processing space for housing the substrate, A heating unit for heating the substrate housed in the processing space, A gas supply unit that supplies an inert gas to the processing space, Another gas supply unit that supplies oxygen-containing gas into the processing container, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of heating the substrate in an oxygen-containing atmosphere by supplying oxygen-containing gas to the processing space and exhausting the processing space without supplying inert gas to the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (B) After step (A), the system is controlled to perform a step of supplying an inert gas to the processing space and exhausting the processing space, and heating the substrate in an atmosphere with a lower oxygen concentration than in step (A). The system further includes a modification unit for changing the volume of the processing space, The aforementioned step (B) is, (C) A step of reducing the volume of the processing space to that of step (A) and replacing the oxygen-containing gas in the processing space with an inert gas, (D) A heating apparatus comprising the step of heating a substrate in an inert gas atmosphere.

2. The heat treatment apparatus according to claim 1, wherein the volume of the processing space is greater in step (D) than in step (C).

3. The heating apparatus according to claim 2, wherein the flow rate of the inert gas supplied to the processing space is greater in step (C) than in step (D).

4. The aforementioned processing container is A base member including a mounting surface on which a substrate is placed, and the heating section, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The heat treatment apparatus according to claim 1, wherein the modification part changes the volume of the processing space by adjusting the height of the lid member relative to the bottom member.

5. The aforementioned processing container is A base member including a mounting surface on which a substrate is placed, and the heating section, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The heat treatment apparatus according to claim 2 or 3, wherein the modification part changes the volume of the processing space by adjusting the height of the lid member relative to the bottom member.

6. The control unit, With the height of the lid member relative to the bottom member set to the first height, perform step (A). The height of the lid member relative to the bottom member is lowered from the first height to the second height, and step (C) is performed. The heating apparatus according to claim 5, wherein control is performed to increase the height of the lid member relative to the bottom member from the second height to the third height and to execute the (D) step.

7. A heating plate having a mounting surface on which a substrate housed in the processing space is placed, and the heating section, The system further includes an adjustment mechanism for adjusting the height of the substrate relative to the heating plate, The control unit, (E) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (F) The heating apparatus according to claim 1, further controlled to perform the step of lowering the height of the substrate relative to the heating plate to a predetermined height when the heating treatment has progressed to a predetermined degree, so that the substrate is placed on or close to the heating plate.

8. The heat treatment apparatus according to claim 7, wherein the control unit controls the process to execute the (F) process in the middle of the (A) process.

9. The heating apparatus according to claim 7, wherein the control unit controls the process to execute the (F) process during the (C) process.

10. The aforementioned exhaust section is A central exhaust section for exhausting the processing space is located above the aforementioned mounting surface, at a position corresponding to a position closer to the center of the substrate on the aforementioned mounting surface, It has a peripheral exhaust section that exhausts the processing space from a position above the mounting surface, corresponding to a position near the peripheral edge of the substrate on the mounting surface described above, The control unit, The exhaust from the central exhaust unit is kept OFF in step (E), and switched ON in step (F). The heating apparatus according to any one of claims 7 to 9, wherein control is performed to maintain the exhaust from the peripheral exhaust section in the ON state from step (E) onwards.

11. The aforementioned processing container is The bottom member including the aforementioned heating plate, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The system further includes another adjustment mechanism for adjusting the height of the lid member relative to the bottom member, The control unit, (G) The heat treatment apparatus according to claim 10, wherein, at the end of the heat treatment, the control is performed to further carry out the step of increasing the height of the lid member relative to the bottom member and opening the processing space, while keeping the exhaust from the central exhaust unit ON, and then, after a predetermined time has elapsed.

12. A heating apparatus for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, A processing container that forms a processing space for housing the substrate, A heating unit for heating the substrate housed in the processing space, A gas supply unit that supplies an inert gas to the processing space, Another gas supply unit that supplies oxygen-containing gas into the processing container, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of heating the substrate in an oxygen-containing atmosphere by supplying oxygen-containing gas to the processing space and exhausting the processing space without supplying inert gas to the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (B) After step (A), the system is controlled to perform a step of supplying an inert gas to the processing space and exhausting the processing space, and heating the substrate in an atmosphere with a lower oxygen concentration than in step (A). A heating plate having a mounting surface on which a substrate housed in the processing space is placed, and the heating section, The system further includes an adjustment mechanism for adjusting the height of the substrate relative to the heating plate, The control unit, (E) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (F) A heat treatment apparatus that controls the process to further perform the step of lowering the height of the substrate relative to the heating plate to a predetermined height when the heat treatment has progressed to a predetermined degree, so that the substrate is placed on or close to the heating plate.

13. A heat treatment method for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, (a) A step of heating the substrate in an atmosphere of oxygen-containing gas, without supplying an inert gas to the processing space containing the substrate, while supplying an oxygen-containing gas to the processing space and exhausting the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (b) After step (a), the process includes supplying an inert gas to the processing space and exhausting the processing space, and heating the substrate in an atmosphere with a lower oxygen concentration than in step (a), The above step (b) is, (c) A step of reducing the volume of the processing space to that of step (a) and replacing the oxygen-containing gas in the processing space with an inert gas. (d) A heat treatment method comprising the step of heating a substrate in an inert gas atmosphere.

14. A heat treatment method for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, (a) A step of heating the substrate in an atmosphere of oxygen-containing gas, without supplying an inert gas to the processing space containing the substrate, while supplying an oxygen-containing gas to the processing space and exhausting the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (b) After step (a), supply an inert gas to the processing space and exhaust the processing space, and heat the substrate in an atmosphere with a lower oxygen concentration than in step (a), (e) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (f) A heat treatment method comprising the step of lowering the height of the substrate relative to the heating plate to a predetermined height when the heat treatment has progressed to a predetermined degree, so that the substrate is placed on or close to the heating plate.

15. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a heat treatment apparatus, which causes the heat treatment apparatus to perform a heat treatment method for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, The aforementioned heat treatment method is (a) A step of heating the substrate in an atmosphere of oxygen-containing gas, without supplying an inert gas to the processing space containing the substrate, while supplying an oxygen-containing gas to the processing space and exhausting the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (b) After step (a), the process includes supplying an inert gas to the processing space and exhausting the processing space, and heating the substrate in an atmosphere with a lower oxygen concentration than in step (a), The above step (b) is, (c) A step of reducing the volume of the processing space to that of step (a) and replacing the oxygen-containing gas in the processing space with an inert gas. (d) A computer storage medium comprising the step of heating a substrate in an inert gas atmosphere.

16. A readable computer storage medium storing a program that operates on a computer of a control unit that controls a heat treatment apparatus, which causes the heat treatment apparatus to perform a heat treatment method for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, The aforementioned heat treatment method is (a) A step of heating the substrate in an atmosphere of oxygen-containing gas, without supplying an inert gas to the processing space containing the substrate, while supplying an oxygen-containing gas to the processing space and exhausting the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (b) After step (a), supply an inert gas to the processing space and exhaust the processing space, and heat the substrate in an atmosphere with a lower oxygen concentration than in step (a), (e) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (f) A computer storage medium comprising the step of lowering the height of the substrate relative to the heating plate to a predetermined height when the heating treatment has progressed to a predetermined degree, so that the substrate is placed on or close to the heating plate.

17. A heating apparatus for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, A processing container that forms a processing space for housing the substrate, A heating unit for heating the substrate housed in the processing space, A gas supply unit that supplies an oxygen-free inert gas to the processing space, Another gas supply unit that supplies oxygen-containing gas into the processing container, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of heating the substrate in an oxygen-containing atmosphere by supplying oxygen-containing gas to the processing space and exhausting the processing space without supplying inert gas to the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (B) A heating apparatus that controls the process to perform the following steps after step (A): supplying an inert gas to the processing space and exhausting the processing space without supplying an oxygen-containing gas to the processing space, and heating the substrate in an inert gas atmosphere.

18. A heat treatment method for heating a substrate on which a coating film containing a material that exhibits a crosslinking reaction with oxygen has been formed, (a) A step of heating the substrate in an atmosphere of oxygen-containing gas, without supplying an oxygen-free inert gas to the processing space containing the substrate, while supplying an oxygen-containing gas to the processing space and exhausting the processing space until the crosslinking reaction by reaction with oxygen in the coated film progresses to a predetermined degree, (b) A heat treatment method comprising the step of supplying an inert gas to the processing space and exhausting the processing space after the step of (a), without supplying an oxygen-containing gas to the processing space, and heating the substrate in an inert gas atmosphere.

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