Inspection method, correction amount calculation method, and inspection apparatus

Abstract

To provide a technique capable of bringing a probe and a substrate into precise contact.SOLUTION: An inspection method includes the processes of: before executing electric inspection, calculating three-dimensional correction quantities in moving a mount base mounted with a substrate in three dimensions; and during the execution of the electric inspection, moving the mount base based upon the calculated three-dimensional correction quantities. The process of calculating the three-dimensional correction quantities includes: acquiring information on a contact state in which a plurality of probes comes into contact with the substrate while elevating the mount base; and calculating the three-dimensional correction quantities based upon the acquired information on the contact state.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present disclosure relates to an inspection method, a correction amount calculation method, and an inspection apparatus.

Background Art

[0002] Patent Document 1 discloses a probe apparatus (inspection apparatus) that has a main chuck for placing a wafer and performs electrical inspection of the wafer by moving the main chuck in three-dimensional directions (X direction, Y direction, Z direction) and the θ direction.

[0003] In this type of inspection apparatus, when over-driving in the electrical inspection of a wafer, the mounting table and the wafer tilt due to the load applied from the probes of the probe card. For this reason, the inspection apparatus obtains the three-dimensional direction movement correction amount of the mounting table at the time of over-driving based on the information of the mounting table, the information of the wafer, and the information of the probe card, and performs a process of moving the mounting table according to this movement correction amount.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique capable of accurately bringing a probe into contact with a substrate.

Means for Solving the Problems

[0006] According to one aspect of the present disclosure, an inspection method for performing an electrical inspection by bringing a substrate into contact with a plurality of probes, comprising the steps of: calculating a three-dimensional correction amount when moving a mounting table on which the substrate is placed in a three-dimensional direction before performing the electrical inspection; and moving the mounting table based on the calculated three-dimensional correction amount when performing the electrical inspection, wherein the step of calculating the three-dimensional correction amount is Multiple areas are set on the mounting surface of the aforementioned mounting platform, While the mounting platform is being raised, information about the contact state of the multiple probes in contact with the substrate is collected. This includes information such as: the starting position of conductivity for each of the multiple vertices in the area where the multiple probes are in contact with the substrate when the multiple probes make contact with the substrate and conductivity begins; and the ending position of conductivity for each of the multiple vertices in the area where the multiple probes are in contact with the substrate when conductivity between the multiple probes and the substrate is completed after the acquisition of the starting position of conductivity. Obtain, obtain Based on the conductivity start position and conductivity end position for each of the plurality of tops, the area in contact with the plurality of probes An inspection method is provided for calculating the correction amount in the three-dimensional direction. [Effects of the Invention]

[0007] According to one aspect of this disclosure, the probe and the substrate can be brought into contact with high precision. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic longitudinal cross-sectional view showing an inspection apparatus according to the first embodiment. [Figure 2] This is a schematic side view showing the contact operation when the mounting platform is moved. [Figure 3] This graph shows the change in the contact state between the probe card and the wafer when the mounting platform is moved in the Z-axis direction. [Figure 4] This is a block diagram showing the functional block that performs correction amount calculation processing and 3D contact correction. [Figure 5] This is a flowchart showing the inspection method according to the first embodiment. [Figure 6] This diagram shows a schematic plan view of the mounting platform for the inspection device according to the second embodiment, and an explanatory diagram showing the correction amount in the three-dimensional direction of the area. [Figure 7] This is an explanatory diagram showing the patterns of division into multiple areas in the correction amount calculation process. [Figure 8] This is a flowchart showing the inspection method (correction amount calculation method) according to the second embodiment. [Figure 9] This is a schematic longitudinal cross-sectional view showing an inspection apparatus according to the third embodiment. [Figure 10] This graph shows the change in each Z coordinate and the number of needle marks. [Figure 11] This is a flowchart of the correction amount calculation process according to the third embodiment. [Modes for carrying out the invention]

[0009] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0010] [First Embodiment] Figure 1 is a schematic longitudinal cross-sectional view showing the inspection apparatus 1 according to the first embodiment. As shown in Figure 1, the inspection apparatus 1 according to the first embodiment is an apparatus for inspecting the electrical characteristics of multiple semiconductor devices formed on a wafer (substrate) W, which is an example of a device under test (DUT). Note that the substrate is not limited to wafer W, but may also be a carrier on which semiconductor devices are arranged, a glass substrate, a single chip, an electronic circuit board, etc.

[0011] The inspection device 1 comprises a housing 10, a loader 20 positioned adjacent to the housing 10, and a tester 30 positioned above the housing 10. The housing 10 is formed in the shape of a rectangular parallelepiped (box) and has an inspection space 11 inside for inspecting wafers W. The inspection device 1 houses a stage 40 on which wafers W are placed within this inspection space 11. The lower side of the tester 30 is positioned within the inspection space 11, and the tester 30 holds a probe card 32 via an interface 31.

[0012] The loader 20 removes the wafer W from the transport container FOUP (not shown) and places it on the stage 40, which moves within the housing 10. The loader 20 also removes the inspected wafer W from the stage 40 and places it back into the FOUP.

[0013] The tester 30 has a test board (not shown) inside that reproduces the circuit configuration of the wafer W on which the semiconductor device is provided, and is connected to the controller 80 of the inspection apparatus 1. The test board determines the quality of the semiconductor device based on the signals from the semiconductor devices on the wafer W and performs appropriate control. The tester 30 can reproduce the circuit configurations of multiple types of wafers W, for example, by switching between multiple test boards.

[0014] The probe card 32 held by the tester 30 includes a large number of needle-shaped probes 33 (probing needles) arranged corresponding to the pads and solder bumps of each semiconductor device on the wafer W. In the inspection by the tester 30 according to the present embodiment, for example, a probe card 32 having several hundred to several tens of thousands of probes 33 is applied. Each probe 33 supplies power to the semiconductor device from the tester 30 via the interface 31 in a state of contacting the wafer W, or transmits the signal from the semiconductor device to the tester 30 via the interface 31.

[0015] The inspection apparatus 1 relatively moves the wafer W held on the stage 40 with respect to the probe card 32 connected to the test head of the tester 30, and presses each probe 33 against the pads of the semiconductor devices on the wafer W to cause the tester 30 to perform a test. By sequentially repeating this test process while shifting the position on the wafer W by moving the stage 40 in the X-axis direction, Y-axis direction, and Z-axis direction, the inspection apparatus 1 fully inspects the semiconductor devices on the wafer W.

[0016] The stage 40 is provided movably inside the housing 10 and conveys the wafer W or the probe card 32 in the inspection space 11. For example, the stage 40 conveys the wafer W from the loader 20 to the position opposite the probe card 32 and raises the wafer W toward the probe card 32, thereby enabling the inspection of the wafer W. After the inspection, the stage 40 lowers the inspected wafer W from the probe card 32 and further conveys the wafer W toward the loader 20.

[0017] Specifically, the stage 40 includes a movable section 41 (X-axis moving mechanism 42, Y-axis moving mechanism 43, Z-axis moving mechanism 44) that can move in the X-axis, Y-axis, and Z-axis directions, a mounting base 45, and a stage control unit 49. The housing 10 also includes a frame structure 12 that supports the movable section 41 and mounting base 45 of the stage 40 and the stage control unit 49 in two stages, upper and lower. For example, the frame structure 12 has an upper base 12a that supports the movable section 41, a lower base 12b that supports the stage control unit 49, and a plurality of support columns 12c provided at the four corners of the lower base 12b that support the upper base 12a.

[0018] The X-axis movement mechanism 42 of the moving section 41 includes a plurality of guide rails 42a fixed to the upper surface of the upper base 12a and extending along the X-axis direction, and an X-axis movable body 42b positioned between each guide rail 42a. The X-axis movable body 42b has an X-axis operating unit (motor, gear mechanism, etc.) (not shown) inside, and this X-axis operating unit is connected to the stage control unit 49. The X-axis movable body 42b reciprocates in the X-axis direction based on power supplied from a motor driver (not shown) of the stage control unit 49.

[0019] Similarly, the Y-axis movement mechanism 43 includes a plurality of guide rails 43a fixed to the upper surface of the X-axis movable body 42b and extending along the Y-axis direction, and a Y-axis movable body 43b positioned between each guide rail 43a. The Y-axis movable body 43b also has an internal Y-axis operating unit (motor, gear mechanism, etc.) (not shown), which is connected to the stage control unit 49. The Y-axis movable body 43b reciprocates in the Y-axis direction based on power supplied from a motor driver (not shown) of the stage control unit 49.

[0020] The Z-axis movement mechanism 44 includes a fixed body 44a installed on the Y-axis movable body 43b, and a Z-axis movable body 44b that moves up and down along the Z-axis direction relative to the fixed body 44a, with a mounting table 45 held on the upper part of the Z-axis movable body 44b. The Z-axis movable body 44b has a Z-axis operating unit (motor, gear mechanism, etc.) (not shown) inside, and this Z-axis operating unit is connected to the stage control unit 49. The Z-axis movable body 44b is displaced in the Z-axis direction (vertical direction) based on power supplied from a motor driver (not shown) of the stage control unit 49, and consequently moves the wafer W held on the mounting table 45 up and down. In addition to moving the mounting table 45 in the X-axis direction, Y-axis direction, and Z-axis direction, the movement unit 41 may also be configured to rotate the mounting table 45 around an axis (θ direction).

[0021] On the other hand, the mounting table 45 is a device on which the wafer W is directly placed and is transported by the moving unit 41. This mounting table 45 has a bottom plate 46 that engages with the Z-axis moving mechanism 44, a support block 47 stacked on top of the bottom plate 46, and a chuck top 48 stacked on top of the support block 47.

[0022] The support block 47 supports the chuck top 48 at an appropriate height. The inspection apparatus 1 may also include a temperature control module (not shown) inside the support block 47 for adjusting the temperature of the wafer W held on the mounting table 45. The chuck top 48 is formed in a substantially disc shape with a diameter larger than that of the wafer W. The upper surface of the chuck top 48 is a mounting surface 48s on which the wafer W is placed.

[0023] Furthermore, it is preferable that the mounting base 45 is equipped with a mechanism appropriate to the holding means for holding the wafer W on the mounting surface 48s. For example, when the wafer W is vacuum-suctioned, the holding means may have suction passages for suction in the support block 47 or chuck top 48, and may also be equipped with piping and a suction pump connected to the suction passages at appropriate locations.

[0024] The stage control unit 49 is connected to the controller 80 and controls the operation of the stage 40 based on commands from the controller 80. The stage control unit 49 includes, for example, an integrated control unit that controls the operation of the entire stage 40, a PLC or motor driver that controls the operation of the moving unit 41, a lighting control unit, a power supply unit, etc. (not shown).

[0025] The controller 80 of the inspection device 1 includes a main control unit 81 that controls the entire inspection device 1, and a user interface 85 connected to the main control unit 81. The main control unit 81 is composed of a computer, a control circuit board, and the like.

[0026] For example, the main control unit 81 includes a processor 82, memory 83, an input / output interface (not shown), and electronic circuits. The processor 82 is a combination of one or more of the following: a CPU, ASIC, FPGA, or a circuit consisting of multiple discrete semiconductors. The memory 83 includes volatile memory and non-volatile memory (e.g., compact disc, DVD, hard disk, flash memory, etc.) and stores a program for operating the inspection device 1 and a recipe describing the inspection contents.

[0027] On the other hand, the user interface 85 can be a keyboard for the user to input commands, etc., or a display that visualizes and displays the operating status of the inspection device 1. Alternatively, the user interface 85 may be a touch panel, mouse, microphone, speaker, or other device.

[0028] The controller 80 controls each component of the inspection apparatus 1 to perform inspection of the wafer W. During the inspection of the wafer W, the inspection apparatus 1 moves the mounting table 45 of the stage 40 and performs a contact operation to bring the wafer W into contact with the multiple probes 33 of the probe card 32. In this embodiment, the inspection apparatus 1 performs 3D contact correction in this contact operation to correct the amount of movement of the mounting table 45 in the X-axis, Y-axis, and Z-axis directions in response to the load applied to the mounting table 45 from the multiple probes 33.

[0029] Figure 2 is a schematic side view showing the contact operation when the mounting platform 45 is moved, where (A) is the operation without 3D contact correction and (B) is the operation with 3D contact correction. Next, the principle of 3D contact correction of the inspection device will be explained with reference to Figure 2.

[0030] As shown in Figure 2(A), the mounting table 45 (stage 40) on which the wafer W is placed in the inspection apparatus 1 comes into contact with hundreds to tens of thousands of probes 33 while the mounting table 45 is being raised upward in the Z-axis direction for inspection. As a result, the wafer W is subjected to a high load from each probe 33, and the contact points of each probe 33 tilt downward in the Z-axis direction (downward in the vertical direction). In particular, when each probe 33 inspects the outer circumference of the wafer W, a high load is applied to the outer circumference of the mounting table 45, causing the tilt of the mounting table 45 to become more pronounced. For example, the outer circumference of the mounting table 45 is displaced downward in the Z-axis direction due to the high load. Note that the tilt of the mounting table 45 includes not only the tilt of the entire mounting table 45, but also a state in which the area around the contact points (a part of the mounting table 45) is distorted relative to other parts.

[0031] Furthermore, the inclination of the mounting table 45 affects the position and size of the needle marks left by each probe 33 on the wafer W placed on the mounting surface 48s. Specifically, probe 33a, which makes contact with the central side of the mounting table 45, contacts the approximate center position of the target semiconductor device pad Pd1, and can apply strong contact pressure, resulting in a larger needle mark size. On the other hand, probe 33b, which is located further outward on the wafer W than probe 33a, contacts a position shifted radially inward from the approximate center position of the target semiconductor device pad Pd2 on the wafer W. Also, the contact pressure of probe 33b is lower than that of probe 33a, so its needle mark size is smaller than that of probe 33a. Furthermore, probe 33c, which is located further outward on the wafer W than probe 33b, contacts a position shifted even further radially inward from the approximate center position of the target semiconductor device pad Pd3 on the wafer W. Furthermore, since the contact pressure of probe 33c is even lower than that of probe 33a, the size of the needle mark it leaves becomes even smaller than that of probe 33a.

[0032] The main control unit 81 of the controller 80 of the inspection device 1 performs 3D contact correction for the tilt of the mounting table 45. In 3D contact correction when the mounting table 45 is raised, the main control unit 81 controls the movement unit 41 of the stage 40 to displace the mounting table 45 so that it is in a coordinate position (X-axis, Y-axis, and Z-axis) with the corrected 3D correction amount added. Alternatively, the 3D contact correction may be performed by the stage control unit 49, which actually controls the movement of the stage 40.

[0033] For example, in 3D contact correction, the controller 80 moves the mounting table 45 radially outward in the X and Y directions while raising the mounting table 45 upward in the Z direction. As a result, the wafer W placed on the mounting table 45 is displaced to move closer to each probe 33 without changing the orientation of the mounting table 45. Consequently, probe 33c comes into contact with the approximate center of the target semiconductor device pad Pd3. The needle mark size of probe 33c also becomes larger than before correction. Furthermore, probe 33b also bends slightly due to the contact pressure from the wafer W and comes into contact with the approximate center of the target semiconductor device pad Pd2. Therefore, the needle mark size of probe 33b also becomes larger than before correction. In addition, probe 33a bends even more due to the contact pressure from the wafer W, but maintains a contact state that keeps the approximate center position and needle mark size of the semiconductor device pad Pd1. Thus, 3D contact correction can stabilize the contact state of each probe 33.

[0034] In the 3D contact correction described above, the amount of correction in the three-dimensional directions (X-axis, Y-axis, and Z-axis) is important for each probe 33 to make accurate contact with each semiconductor device. In conventional 3D contact correction, the amount of correction for 3D contact correction was uniquely set according to, for example, the model of the inspection device 1, the type of probe card 32, or the type of wafer W. However, the amount of correction in the three-dimensional direction is set in the units of several microns or several nanometers, and differences arise due to individual differences in the equipment. Differences also arise depending on the orientation of the probe card 32 when it is attached to the tester 30, or the flatness of the probe card 32 itself. Furthermore, differences arise depending on the type of wafer W being inspected. Therefore, the amount of correction in the three-dimensional direction for 3D contact correction needs to be set to an appropriate value for each device, probe card 32, or wafer W.

[0035] To compensate for individual differences in the device, probe card 32, or wafer type W, the inspection device 1 automatically performs a correction amount calculation process to calculate a correction amount in the three-dimensional direction after the probe card 32 is attached. In this correction amount calculation process, the inspection device 1 uses the wafer W itself that is actually being inspected. This makes it possible for the inspection device 1 to obtain a correction amount in the three-dimensional direction that takes into account individual differences in the device, individual differences in the probe card 32 after attachment, and differences in the type of wafer W that the probe card 32 contacts.

[0036] In the correction amount calculation process, the inspection device 1 acquires the position of the mounting table 45 at the start of conductivity for each probe 33 and the position of the mounting table 45 at the completion of conductivity for each probe 33, and further calculates a correction amount in the three-dimensional direction based on the positions at the start and completion of conductivity. The method for calculating this correction amount will be explained in more detail below.

[0037] Figure 3 is a graph showing the change in the contact state of the wafer W with the probes 33 of the probe card 32 when the mounting table 45 is moved in the Z-axis direction. The horizontal axis of this graph represents the amount of movement of the mounting table 45 in the Z-axis direction, and the values ​​are exemplified in microns. On the other hand, the vertical axis of this graph represents the number of conductions of each probe 33 with respect to the wafer W, and this graph shows an example in which a probe card 32 with 1000 probes 33 is applied.

[0038] Furthermore, "Conditioning Start" on the vertical axis of the graph refers to the timing when the first probe 33 of the multiple probes 33 makes contact with the wafer W as the mounting platform 45 rises, and "Conditioning Start Position" is the Z coordinate (vertical position) in the Z-axis direction at that time. "Conditioning End" on the vertical axis of the graph refers to the timing when all of the multiple probes 33 have completed contact with the wafer W as the mounting platform 45 rises, and "Conditioning End Position" is the Z coordinate in the Z-axis direction at that time.

[0039] In Figure 3, the thin solid line represents the contact state of the wafer W with the probe 33 when using probe card A, and the thick solid line represents the contact state of the wafer W with the probe 33 when using probe card B. Specifically, when the mounting platform 45 is raised, probe card A makes contact with the first probe 33 at a low Z coordinate in the Z-axis direction of the mounting platform 45. Then, as the mounting platform 45 rises after conductivity begins, the number of contacts of each probe 33 gradually increases, and the number of contacts becomes constant at the conductivity termination position where all probes 33 have made contact. On the other hand, probe card B makes contact with the first probe 33 at a position where the Z coordinate in the Z-axis direction of the mounting platform 45 is higher than the Z coordinate in the Z-axis direction of probe card A. Then, as the mounting platform 45 rises after conductivity begins, the number of contacts of each probe 33 increases rapidly, and the number of contacts becomes constant at the conductivity termination position where all probes have made contact. The conductivity termination position for probe card A and probe card B is the same. Note that if the configuration of probe card 32 (number of probes 33) or the mounting state of probe card 32 is different, the continuity termination position of probe card A and the continuity termination position of probe card B will be different from each other.

[0040] In other words, in Figure 3, the Z-axis movement range of probe card A, from when the first probe 33 contacts the wafer W until all probes 33 contact the wafer W (hereinafter referred to as the conductive movement range), is longer than the conductive movement range of probe card B. Possible reasons for this longer conductive movement range include tilting of the mounting table 45, poor posture or flatness of probe card A, or poor flatness of wafer W. Furthermore, if probe card A and probe card B are mounted on the same inspection device 1 and detection is performed on the same wafer W, it can be assumed that the posture or flatness of probe card A is worse than that of probe card B. However, regardless of the cause of the length of the conductive movement range, it can be seen that by extracting the conductive movement range after mounting probe card 32, a three-dimensional correction amount that absorbs individual differences in the device and probe card 32, as well as the type of wafer W, can be calculated.

[0041] Therefore, the main control unit 81 performs a correction amount calculation process (correction amount calculation method) to calculate the correction amount in the three-dimensional direction from the time the probe card 32 is attached until the electrical inspection of the wafer W is performed. Then, the main control unit 81 uses the correction amount in the three-dimensional direction obtained from the correction amount calculation process to perform 3D contact correction in the contact operation during the electrical inspection of the wafer W. The main control unit 81 constructs a functional block that performs the correction amount calculation process and 3D contact correction as shown in Figure 4 by having the processor 82 execute a program recorded in the memory 83.

[0042] Figure 4 is a block diagram showing the functional blocks that perform the correction amount calculation process and 3D contact correction. Specifically, the main control unit 81 contains a probe card information acquisition unit 90, a start determination unit 91, a test control unit 92, a movement command unit 93, a conduction position acquisition unit 94, a correction amount setting unit 95, a memory area 98, and the like.

[0043] When a probe card 32 is attached to the test device 1, the probe card information acquisition unit 90 acquires the attachment information of the probe card 32 from the tester 30, stores it in the memory 83, and outputs it to the start determination unit 91. The attachment information includes, for example, the identification information of the probe card 32, the number of probes 33, the power required to activate the probes 33 when continuity begins, the power required to activate the probes 33 when continuity is completed, and the attachment time.

[0044] When the start determination unit 91 obtains mounting information from the probe card information acquisition unit 90, it determines whether or not to perform the correction amount calculation process. For example, when the start determination unit 91 recognizes that the probe card 32 has been replaced and that the wafer W has been set on the loader 20 (or mounting table 45), it determines to start the correction amount calculation process. The correction amount calculation process may also be configured to be started based on the user's operation of the user interface 85. Once the start of the correction amount calculation process is determined, the start determination unit 91 outputs a start command to the test control unit 92, the conduction position acquisition unit 94, etc.

[0045] The test control unit 92 controls the operation of the wafer W during electrical testing. In the correction amount calculation process, the test control unit 92 controls the operation of the stage 40 to bring each probe 33 of the probe card 32 into contact with the wafer W placed on the mounting table 45, similar to the electrical testing of the wafer W, and measures the conductivity timing. In the correction amount calculation process, the contact operation of the mounting table 45 is performed without 3D contact correction, and the wafer W is brought into contact with each probe 33.

[0046] The movement command unit 93 receives control commands output by the test control unit 92 and outputs movement commands to the stage 40 (stage control unit 49). For example, in the correction amount calculation process, the mounting table 45 is moved horizontally (X-axis and Y-axis directions) and vertically (Z-axis direction) up and down so that each probe 33 of the probe card 32 contacts the center position of the wafer W on the mounting table 45. Meanwhile, in the electrical inspection of the wafer W, the movement command unit 93 moves the stage 40 using the three-dimensional correction amounts stored in the memory area 98.

[0047] The conduction position acquisition unit 94 acquires information on the conduction positions where the wafer W contacts each probe 33 from the tester 30 based on the start command for the correction amount calculation process from the start determination unit 91. As described above, the information on the conduction positions includes the start position of conduction when the first probe 33 of the probes 33 contacts the wafer W, and the end position of conduction when all of the probes 33 contact the wafer W (see also Figure 3). The tester 30 detects the conduction timing by supplying power to each probe 33 during the correction amount calculation process, and when it receives the conduction timing, it outputs that conduction timing to the main control unit 81. When the conduction position acquisition unit 94 receives the conduction timing information from the tester 30, it requests the Z coordinate in the Z-axis direction from the stage control unit 49. The stage control unit 49 maintains the 3D coordinate position by feedforward control when the mounting table 45 moves (or acquires it by feedback control from the moving unit 41), and transmits that information to the conduction position acquisition unit 94 based on the request.

[0048] The correction amount setting unit 95 calculates a correction amount in the three-dimensional direction based on the continuity position information received from the continuity position acquisition unit 94. For this purpose, the correction amount setting unit 95 internally includes a continuity movement range calculation unit 96 and a 3D correction amount calculation unit 97.

[0049] The conduction movement range calculation unit 96 calculates the conduction movement range based on the conduction start position and conduction end position included in the conduction position information. For example, the conduction movement range can be easily obtained by subtracting the conduction start position from the conduction end position.

[0050] The 3D correction amount calculation unit 97 calculates a correction amount in the three-dimensional direction based on the position of the contact area where each probe 33 makes contact and the conduction movement range calculated by the conduction movement range calculation unit 96. For example, the correction amount in the three-dimensional direction is calculated individually as movement correction amount in the X-axis direction, movement correction amount in the Y-axis direction, and movement correction amount in the Z-axis direction, and each movement correction amount is calculated to be a larger value as the conduction movement range increases. The correction amount setting unit 95 then stores the calculated three-dimensional correction amounts in the storage area 98. This completes the correction amount calculation process after the replacement of the probe card 32.

[0051] The inspection apparatus 1 according to the first embodiment is basically configured as described above, and the inspection method of the inspection apparatus 1 will be described below with reference to Figure 5. Figure 5 is a flowchart showing the inspection method according to the first embodiment, where (A) shows the processing flow of the correction amount calculation process (correction amount calculation method), and (B) shows the processing flow of the test process (contact operation for electrical inspection of wafer W).

[0052] The inspection device 1 performs an installation operation to attach the probe card 32 to the tester 30 for inspection of the wafer W. When the probe card 32 is attached, the probe card information acquisition unit 90 of the main control unit 81 acquires the installation information of the probe card 32 (step S1).

[0053] The start determination unit 91 monitors the attachment of the probe card 32 and the setting of the wafer W onto the loader 20, and determines the start of the correction amount calculation process in order to obtain a correction amount in the three-dimensional direction corresponding to the attached probe card 32 (step S2).

[0054] When the correction amount calculation process is started, the test control unit 92 moves the stage 40 to transport the wafer W placed on the mounting table 45 (step S3). At this time, the stage 40 moves the mounting table 45 horizontally so that the center position of the wafer W is opposite to the center position of each probe 33 of the probe card 32. Then, the stage 40 raises the mounting table 45 along the vertical direction (Z axis direction) to bring the wafer W into contact with each probe 33.

[0055] As the mounting platform 45 rises, the continuity position acquisition unit 94 acquires the continuity start position, where the first probe 33 of the probes 33 makes contact with the wafer W, from the tester 30 and the stage control unit 49 (step S4). After the continuity starts, the test control unit 92 continues to raise the mounting platform 45. Then, the continuity position acquisition unit 94 acquires the continuity end position, where all probes 33 make contact with the wafer W, from the tester 30 and the stage control unit 49 (step S5).

[0056] Once the continuity position acquisition unit 94 has finished acquiring the continuity position, the continuity movement range calculation unit 96 of the correction amount setting unit 95 calculates the continuity movement range based on the acquired continuity start position and continuity end position (step S6).

[0057] Next, the 3D correction amount calculation unit 97 of the correction amount setting unit 95 calculates the correction amount in the three-dimensional direction based on the calculated conductive movement range, and appropriately stores the correction amount in the three-dimensional direction in the storage area 98 of the memory 83 (step S7). As described above, the correction amount in the three-dimensional direction is calculated as the movement correction amount for the X-axis direction, Y-axis direction, and Z-axis direction, respectively.

[0058] Finally, the main control unit 81 performs a termination process to finish the correction amount calculation process (step S8). For example, in the termination process, based on the control of the test control unit 92, the operation of the tester 30 is stopped, and the stage 40 is moved to return the wafer W on the mounting table 45 to the loader 20.

[0059] As described above, the inspection device 1 can obtain an appropriate three-dimensional correction amount by performing a correction amount calculation process before inspecting the wafer W. This three-dimensional correction amount is determined according to individual differences in the device, individual differences in the probe card 32 attached to the tester 30 (including orientation, flatness, etc.), or the type of wafer W. Therefore, the inspection device 1 can perform 3D contact correction with high precision during the actual electrical inspection (test process) of the wafer W.

[0060] Specifically, as shown in Figure 5(B), the main control unit 81 starts inspecting the wafer W when it receives a test operation from the user via the user interface 85 to perform an electrical inspection of the wafer W (step S11).

[0061] In the electrical inspection of the wafer W, the test control unit 92 transfers the wafer W from the loader 20 to the mounting table 45, then moves the stage 40 to transport the wafer W placed on the mounting table 45 (step S12). At this time, the stage 40 moves the mounting table 45 horizontally to bring the contact position of the wafer W opposite to each probe 33, and then raises the mounting table 45 along the vertical direction (Z-axis direction).

[0062] As the mounting platform 45 rises, the first probe 33 of the probes 33 makes contact with the wafer W, initiating conductivity between the tester 30 and the wafer W (step S13). The test control unit 92 performs 3D contact correction on the contact operation of the mounting platform 45 in response to this initiation of conductivity (step S14).

[0063] In 3D contact correction, the movement command unit 93 reads the correction amount in the three-dimensional direction stored in the memory area 98 through a correction amount calculation process (step S15). Then, the movement command unit 93 calculates the target movement amount in the three-dimensional direction of the mounting platform 45 by adding the correction amount in the three-dimensional direction to the movement amount received from the test control unit 92, and moves the stage 40 according to each target movement amount (step S16).

[0064] Furthermore, during 3D contact correction, the test control unit 92 determines whether the movement of the stage 40 has finished (step S17). If the stage 40 is still moving (step S17: NO), the 3D contact correction continues. On the other hand, if the movement of the stage 40 has finished (step S17: YES), the process proceeds to step S18.

[0065] In step S18, the test control unit 92 starts the inspection of the wafer W using the tester 30. Because the inspection device 1 has performed the 3D contact correction described above, each probe 33 makes accurate contact with each target semiconductor device on the wafer W. As a result, the inspection device 1 can stably perform electrical inspection of the wafer W using the tester 30.

[0066] It should be noted that the inspection apparatus 1, correction amount calculation method, and inspection method described herein are not limited to the embodiments described above, and various modifications are possible. For example, the timing of the correction amount calculation method is not limited as long as it is performed before the electrical inspection of the wafer W, and it does not have to be immediately after the replacement of the probe card 32.

[0067] [Second Embodiment] Figure 6 is a schematic plan view showing the mounting table 45 of the inspection device 1A according to the second embodiment, and an explanatory diagram showing the correction amount in the three-dimensional direction of area A. As shown in Figure 6, the inspection device 1A according to the second embodiment differs from the inspection device 1 according to the first embodiment in that it acquires the correction amount in the three-dimensional direction for each of the multiple areas A.

[0068] Multiple areas A constitute divided surfaces on the mounting surface 48s of the mounting base 45. To form a surface, each area A is formed to have three vertices P. In the example in Figure 6, each area A is set as a triangle divided into eight sections at 45° intervals from the center of the mounting surface 48s, with a common vertex P0 at the center and individual vertices P1 to P8 on the outer periphery. Note that the shape of each area A is not limited to a triangle, but may be a polygon with four or more vertices P.

[0069] The top P of each area A can be set arbitrarily and can be set according to the probe card 32 attached to the tester 30 and the wafer W to be inspected. The controller 80 may automatically set multiple tops P based on the information from the probe card 32, and by setting these multiple tops P, each area A can be set accordingly. For example, in a configuration as shown in Figure 6, where top P0 is set at the center of the mounting surface 48s and other tops P1, P2, ... are set on the outer circumference of the mounting surface 48s, it is preferable that the other tops P1, P2, ... be set outside the center of the radius of the mounting surface 48s.

[0070] Then, in the correction amount calculation process, the main control unit 81 detects the conductive movement range in the Z-axis direction in each of the eight areas A by making each probe 33 of the probe card 32 into contact with each of the eight areas A. The contact points of each probe 33 in each area A are not particularly limited and can be anywhere inside each area A. In Figure 6, point C is shown as an example of the point where the center of each probe 33 makes contact in area A1, and this contact point C is set at the centroid position within the plane enclosed by the vertices P0, P1, and P2 that constitute area A1.

[0071] The conduction position acquisition unit 94 of the main control unit 81 acquires the conduction start position C0 and the conduction end position C1 of the contact point C during the correction amount calculation process. The correction amount setting unit 95 calculates the coordinates in the Z-axis direction of each vertex P based on the acquired conduction start position C0, and also calculates the coordinates in the Z-axis direction of each vertex P based on the acquired conduction end position C1. As an example, as shown in the right figure of Figure 6, the correction amount setting unit 95 calculates the conduction start position P0-z0 of vertex P0, the conduction start position P1-z0 of vertex P1, and the conduction start position P2-z0 of vertex P2 based on the conduction start position C0 of area A1. Furthermore, the correction amount setting unit 95 calculates the conduction end position P0-z1 of vertex P0, the conduction end position P1-z1 of vertex P1, and the conduction end position P2-z1 of vertex P2 based on the conduction end position C1 of area A1.

[0072] Once each conductive position is calculated, the correction amount setting unit 95 calculates the conductive movement range for each of the three vertices P that make up each area A. Using the right diagram of Figure 6 as an example, in area A1, the conductive movement range of vertex P0, the conductive movement range of vertex P1, and the conductive movement range of vertex P2 are calculated. Based on these conductive movement ranges, the correction amount setting unit 95 can calculate the three-dimensional correction amount for the entire surface of area A1, and stores the calculated three-dimensional correction amount for area A1 in the storage area 98.

[0073] The main control unit 81 then calculates the correction amounts for all three dimensions of each area A during the correction amount calculation process and stores them in the storage area 98. This allows the inspection device 1 to read the correction amounts for each three dimensions of each area A from the storage area 98 when each probe 33 contacts the wafer W during the electrical inspection (test process) of the wafer W. For example, when the center (contact point C) of each probe 33 contacts area A1 of the wafer W, the correction amount for the entire surface of area A1 in three dimensions is read and 3D contact correction is performed. This enables the main control unit 81 to perform 3D contact correction with an appropriate correction amount according to the inclination of the probe card 32 and mounting table 45 for each area A.

[0074] Note that the setting of each area A that divides the mounting surface 48s is not limited to the pattern shown in Figure 6, and various patterns are possible. Below, with reference to Figure 7, several examples of the division patterns of each area A will be given. Figure 7 is an explanatory diagram showing multiple division patterns of area A in the correction amount calculation process, where (A) is the first modified example, (B) is the second modified example, (C) is the third modified example, and (D) is the fourth modified example.

[0075] As shown in the first modified example in Figure 7(A), the inspection device 1A may be divided into four areas A at 90° intervals with the center of the mounting surface 48s as the base point during the correction amount calculation process. By dividing each area A in this way, the inspection device 1A can improve the efficiency of the process even when performing the correction amount calculation process for all of the multiple areas A, and it becomes possible to perform good 3D contact correction based on the correction amount in the three-dimensional direction for each of the multiple areas A.

[0076] Furthermore, as shown in the second modified example in Figure 7(B), the inspection device 1A may be divided into three areas A at 120° intervals with the center of the mounting surface 48s as the base point during the correction amount calculation process. This allows the inspection device 1 to process even more efficiently.

[0077] Furthermore, as shown in the third modified example in Figure 7C, the inspection device 1A may be configured to set multiple random vertices P on the mounting surface 48s during the correction amount calculation process, and to form multiple triangular areas A by connecting the vertices P that are close to each other. Even if multiple random areas A are formed in this way, the correction amount in the three-dimensional direction for each area A can be calculated by detecting the conductive movement range for each area A.

[0078] In short, each area A that divides the mounting surface 48s only needs to constitute a part of the surface of the mounting surface 48s, and can be set in various patterns. If there are many areas A that divide the mounting surface 48s, each area A will have a correction amount in the three-dimensional direction, and the accuracy of 3D contact correction can be further improved. Conversely, if there are few areas A that divide the mounting surface 48s, the correction amount calculation process can be made more efficient. The main control unit 81 can be configured to automatically set the division pattern of area A (multiple vertices P) based on the information of the probe card 32. For example, the main control unit 81 may increase the number of divisions of area A when the number of probes 33 or the contact range of each probe 33 is small, and decrease the number of divisions of area A when the number of probes 33 or the contact range of each probe 33 is large.

[0079] However, as shown in the fourth modified example in Figure 7(D), the inspection device 1A performs the correction amount calculation process in one-point mode (as in the first embodiment described above) instead of the multi-point mode correction amount calculation process when the triangle formed by each vertex P has an angle of 150° or more. In other words, when the angle of one vertex P is 150° or more, as shown in Figure 7(D), even if the contact point C is within area A1, it may not accurately reflect the three-dimensional correction amount of area A1. For example, in Figure 7(D), the contact point C is near vertex P1, but the three-dimensional correction amount calculated based on this contact point C does not reflect the three-dimensional correction amount near vertex P2.

[0080] Therefore, when automatically setting each vertex P according to the probe card 32, it is preferable for the main control unit 81 to appropriately select a single-point mode and a multi-point mode based on the position of each vertex P. As an example, as shown by the dotted line in Figure 4, the main control unit 81 includes a mode setting unit 99 within the start determination unit 91, and the mode setting unit 99 sets a plurality of vertex P that divide the mounting surface 48s and a plurality of areas A based on each vertex P. The mode setting unit 99 then selects the correction amount calculation process for single-point mode if there is a vertex P among the vertex P that has an angle of 150° or more.

[0081] The inspection apparatus 1A according to the second embodiment is basically configured as described above, and the processing flow of the inspection method (correction amount calculation method) according to the second embodiment will be explained below with reference to Figure 8. Figure 8 is a flowchart of the correction amount calculation method according to the second embodiment.

[0082] In the second embodiment, the probe card information acquisition unit 90 of the main control unit 81 acquires the installation information of the probe card 32 when the probe card 32 is installed (step S21).

[0083] The mode setting unit 99 of the start determination unit 91 generates each peak P and each area A to divide the mounting surface 48s based on the mounting information of the probe card 32 (step S22). Then, the mode setting unit 99 determines whether to implement multi-point mode or single-point mode based on the generated peak P and each area A (step S23). At this time, as described above, if there is an area A with a peak P of 150° or more, the mode setting unit 99 determines not to implement multi-point mode (step S23: NO) and implements single-point mode as shown in Figure 5. On the other hand, if there is no area with a peak P of 150° or more, the mode setting unit 99 determines to implement multi-point mode (step S23: YES) and proceeds to step S24.

[0084] In step S24, the start determination unit 91 monitors the setting of the wafer W onto the loader 20 and determines the start of the correction amount calculation process in order to obtain a correction amount in the three-dimensional direction corresponding to the attached probe card 32.

[0085] When the correction amount calculation process is started, the test control unit 92 moves the stage 40 to transport the wafer W placed on the mounting table 45 (step S25). At this time, the stage 40 moves the mounting table 45 horizontally so that a predetermined area A appropriately faces the center position (contact point C) of each probe 33 of the probe card 32. Subsequently, the stage 40 raises the mounting table 45 along the vertical direction (Z axis direction) to bring the wafer W in the predetermined area A into contact with each probe 33.

[0086] As the mounting platform 45 rises, the continuity position acquisition unit 94 acquires the continuity start position, where the first probe 33 of the probes 33 makes contact with the wafer W, from the tester 30 and the stage control unit 49 (step S26). After the continuity starts, the test control unit 92 continues to raise the mounting platform 45. Then, the continuity position acquisition unit 94 acquires the continuity end position, where all probes 33 make contact with the wafer W, from the tester 30 and the stage control unit 49 (step S27).

[0087] After acquisition, the conductivity movement range calculation unit 96 calculates the conductivity start position and conductivity end position of each vertex P in a predetermined area A, and further calculates the conductivity movement range of each vertex P based on the conductivity start position and conductivity end position of each vertex P (step S28). Subsequently, the 3D correction amount calculation unit 97 calculates the correction amount in the three-dimensional direction of the predetermined area A based on the calculated conductivity movement range of each vertex P, and stores the three-dimensional correction amount in an appropriate storage area 98 of the memory 83 (step S29).

[0088] Subsequently, the main control unit 81 determines whether the calculation of the three-dimensional correction amount in the predetermined area A has been performed for all area A (step S30). If there is an area A for which the three-dimensional correction amount has not been calculated (step S30: NO), the area A for which the calculation is performed is changed, and the process returns to step S25. Then, steps S25 to S29 are repeated in the same manner to calculate the three-dimensional correction amount for each area A.

[0089] On the other hand, if the correction amount for all areas in the three-dimensional direction has been calculated (step S30: YES), the process proceeds to step S31. In step S31, the main control unit 81 terminates the correction amount calculation process for the multi-point mode by performing a termination process to end the correction amount calculation process.

[0090] In the subsequent test process for electrically inspecting the wafer W, the test control unit 92 and the movement command unit 93 read out the three-dimensional correction amount for each of the corresponding multiple areas A from the storage area 98 based on the contact point C of each probe 33 when moving the stage 40 in the Z-axis direction. The inspection device 1 then performs 3D contact correction based on the three-dimensional correction amount for the corresponding area A. This allows the movement of the stage 40 to be corrected with high precision for each area A, making it possible to make contact with each probe 33 with the target semiconductor device on the wafer W more accurately.

[0091] [Third Embodiment] Figure 9 is a schematic cross-sectional view showing inspection apparatus 1B according to the third embodiment. As shown in Figure 9, inspection apparatus 1B according to the third embodiment differs from inspection apparatuses 1 and 1A in that, in the correction amount calculation process, it utilizes the needle marks formed on each pad Pd by overdrive as information on the contact state between each probe 33 and the wafer W. That is, the controller 80 of inspection apparatus 1B calculates a correction amount in the three-dimensional direction based on the needle marks formed on each pad Pd and the Z coordinate of the stage 40.

[0092] Specifically, the inspection apparatus 1B includes a camera 50 for imaging the wafer W and a camera moving unit 51 for moving the camera 50, all located within the inspection space 11 where the stage 40 is positioned. For example, the camera 50 is installed above the inspection space 11 with its optical lens facing downward in the vertical direction. The camera 50 is held by the camera moving unit 51 so as to be movable relative to the stage 40, and can be moved to an imaging position above the wafer W placed on the mounting table 45 in the vertical direction. The camera moving unit 51 has a drive source (not shown), a drive transmission unit, a plurality of rolling elements, and rails, and moves the camera 50 to an appropriate horizontal coordinate position based on a command from the controller 80. Note that the relative movement between the wafer W and the camera 50 is not limited to the operation of the camera moving unit 51; the wafer W may also be positioned at the imaging position of the camera 50 by the operation of the stage 40.

[0093] In the correction amount calculation process, the controller 80 raises the wafer W until each probe 33 makes contact with each pad Pd, and then the camera 50 captures an image of the contacted chips on the wafer W. The captured information includes the needle marks created when each probe 33 makes contact with each pad Pd of each semiconductor device on the wafer W. The needle marks on each pad Pd are formed in different states (needle mark size, needle mark position, etc.) for each of the multiple probes 33 as the wafer W is overdriven in the Z-axis direction. For example, the needle mark made when a given probe 33 makes contact with an opposing pad Pd for the first time will be different from the needle mark made when the same probe 33 makes contact with the same opposing pad Pd for the second time. Therefore, the controller 80 can easily extract the needle marks of each pad Pd captured this time by performing appropriate image processing on the acquired image information (for example, taking the difference between the image of each pad Pd from the previous time (or when there were no needle marks)).

[0094] Therefore, in the correction amount calculation process, the controller 80 moves the wafer W in the Z-axis direction and performs a pinhole formation operation multiple times, changing the Z coordinate, to bring each probe 33 into contact with each pad Pd and form pinholes. The camera 50 also takes images for each pinhole formation operation. This provides imaging information for multiple Z coordinates, and the controller 80 can count the number of pinholes on each pad Pd in ​​each piece of imaging information. The number of pinholes extracted from the imaging information for each Z coordinate represents the number of times each probe 33 is in contact with each pad Pd. Thus, the controller 80 can obtain contact state information linked to each Z coordinate and the number of pinholes, making it possible to understand the orientation and flatness of the probe card 32 in more detail.

[0095] Figure 10 is a graph showing an example of the change in each Z coordinate and the number of needle marks. For example, the controller 80 sets the movement rate in the conduction movement range in the Z axis direction, with the conduction start position being 0% of the Z coordinate and the conduction end position being 100% of the Z coordinate. Then, it sets the Z coordinates to be imaged by the camera 50 at points where the movement rate of the conduction movement range is divided into multiple equal parts (for example, 25%, 50%, 75%). In other words, the controller 80 extracts the number of needle marks when the conduction movement range is moved 25% from the conduction start position, the number of needle marks when the conduction movement range is moved 50% from the conduction start position, and the number of needle marks when the conduction movement range is moved 75% from the conduction start position. It should be noted that the number and position of Z coordinates from which the number of needle marks is extracted can be set arbitrarily.

[0096] The change in the number of needle marks along the Z-axis differs depending on the shape of each probe 33. For example, the probe card 32A, which has probes 33 with flat lower ends, shows a linear increase in the number of needle marks as the Z-coordinate increases. Specifically, at 25% of the Z-coordinate, the ratio of the number of needle marks to the total number of probes (hereinafter referred to as the needle mark ratio) is 25%, at 50% of the Z-coordinate, the needle mark ratio is 50%, and at 75% of the Z-coordinate, the needle mark ratio is 75%.

[0097] On the other hand, probe card 32B, having probes 33 that are shorter on the outer edge and longer on the inside, shows a change where the number of needle marks increases sharply at first, and then the increase in the number of needle marks becomes more gradual. Specifically, the percentage of needle marks is 50% at a Z coordinate of 25%, 80% at a Z coordinate of 50%, and 95% at a Z coordinate of 75%. Similarly, probe card 32C, having probes 33 that are longer on the outer edge and shorter on the inside, shows a change where the number of needle marks increases gradually at first, and then the number of needle marks increases sharply. Specifically, the percentage of needle marks is 5% at a Z coordinate of 25%, 30% at a Z coordinate of 50%, and 90% at a Z coordinate of 75%.

[0098] The controller 80 can calculate the three-dimensional correction amount more appropriately by recognizing the change in the number of needle marks (needle mark ratio) as shown in Figure 10 during the correction amount calculation process. For example, the controller 80 increases the three-dimensional correction amount of the stage 40 in the initial stages of movement in the Z-axis direction where the number of needle marks increases rapidly (e.g., when the Z coordinate is in the range of 0% to 50%), as in the probe card 32B. Conversely, the controller 80 decreases the three-dimensional correction amount of the stage 40 in the later stages of movement in the Z-axis direction (e.g., when the Z coordinate is in the range of 50% to 100%). This allows the inspection device 1B to make contact with each probe 33 of the probe card 32B with each pad Pd with greater accuracy. Conversely, the controller 80 decreases the three-dimensional correction amount of the stage 40 in the initial stages of movement in the Z-axis direction where the number of needle marks increases gradually (e.g., when the Z coordinate is in the range of 0% to 50%), as in the probe card 32C. Furthermore, the controller 80 increases the amount of three-dimensional correction for the stage 40 during the later stages of movement in the Z-axis direction (for example, when the Z coordinate is in the range of 50% to 100%). This allows the inspection device 1B to make each probe 33 of the probe card 32C contact each pad Pd with greater precision.

[0099] The inspection device 1B according to the third embodiment is basically configured as described above, and the processing flow of the correction amount calculation process of this inspection device 1B will be explained below with reference to Figure 11. Figure 11 is a flowchart of the correction amount calculation process according to the third embodiment.

[0100] In the correction amount calculation process, the controller 80 first sets the percentage of needle marks at the 25% Z coordinate (step S31). Based on this setting, the controller 80 moves the stage 40 on which the wafer W is placed to bring each probe 33 and each pad Pd into contact and overdrive them (step S32). Then, when the stage 40 reaches the 25% Z coordinate position, the controller 80 lowers the stage 40 to separate each pad Pd from each probe 33.

[0101] Subsequently, the controller 80 moves the camera 50 to the imaging position on the wafer W and images the wafer W (step S33). When the controller 80 acquires the imaging information from the camera 50, it extracts the number of needle marks at 25% of the Z coordinates (needle mark ratio) from the imaging information and stores it in the memory 83 (step S34).

[0102] Similarly, the controller 80 is set to acquire the percentage of needle marks at 50% of the Z coordinates (step S35), and moves the stage 40 to make contact with and overdrive each probe 33 and each pad Pd (step S36). The controller 80 then images the wafer W with the camera 50 (step S37), extracts the number of needle marks at 50% of the Z coordinates (needle mark percentage) from the imaging information, and stores it in the memory 83 (step S38).

[0103] Furthermore, the controller 80 is set to acquire the percentage of needle marks at 75% of the Z coordinates (step S39), and moves the stage 40 to make contact with and overdrive each probe 33 and each pad Pd (step S40). The controller 80 then images the wafer W with the camera 50 (step S41), extracts the number of needle marks at 75% of the Z coordinates (needle mark percentage) from the imaging information, and stores it in the memory 83 (step S42).

[0104] As described above, the inspection device 1B can easily obtain the needle mark ratio for each Z coordinate in the correction amount calculation process. The controller 80 then performs appropriate calculation processing (such as linear interpolation) based on each Z coordinate and the needle mark ratio to obtain a function or map information that shows the change in the needle mark ratio when overdriven from the conduction start position to the conduction end position. Furthermore, by calculating a correction amount in the three-dimensional direction based on this function or map information, the controller 80 can effectively correct the movement of the stage 40 in the test process that actually performs electrical inspection of the wafer W.

[0105] The technical ideas and effects of this disclosure, as described in the embodiments above, are described below.

[0106] A first aspect of the present invention is an inspection method for performing electrical inspection by bringing a substrate (wafer W) into contact with a plurality of probes 33, comprising the steps of: calculating a three-dimensional correction amount when moving a mounting table 45 on which the substrate is placed in the three-dimensional direction before performing the electrical inspection; and moving the mounting table 45 based on the calculated three-dimensional correction amount when performing the electrical inspection, wherein the step of calculating the three-dimensional correction amount involves acquiring information on the contact state in which the plurality of probes 33 are in contact with the substrate while the mounting table 45 is being raised, and calculating the three-dimensional correction amount based on the acquired contact state information.

[0107] As described above, the inspection method allows for appropriate correction of the movement of the mounting table 45 when performing electrical testing by using a three-dimensional correction amount calculated before the test. In particular, the inspection method uses information on the contact state when multiple probes 33 of the probe card 32 attached to the inspection device 1 come into contact with the substrate. Therefore, it is possible to calculate a three-dimensional correction amount that includes individual differences in the device and probe card 32, as well as the type of substrate. Consequently, the inspection method enables accurate contact between the substrate placed on the mounting table 45 and the multiple probes 33 during actual electrical testing (test processing), allowing for stable electrical testing.

[0108] Furthermore, the contact state information includes the conduction start position when multiple probes 33 make contact with the substrate (wafer W) and conduction begins, and the conduction end position when conduction between the multiple probes 33 and the substrate is completed after the conduction start position has been acquired. In this way, the inspection method can easily and accurately calculate the correction amount in the three-dimensional direction by using the information of the conduction start position and the conduction end position.

[0109] Furthermore, in calculating the correction amount in the three-dimensional direction, the conduction movement range between the conduction start position and the conduction end position is calculated, and the correction amount in the three-dimensional direction is calculated based on the conduction movement range. As a result, the inspection method can obtain the correction amount in the three-dimensional direction with high accuracy using the conduction movement range when multiple probes 33 are in contact.

[0110] Furthermore, in calculating the correction amount in the three-dimensional direction, the larger the conductive movement range, the larger the correction amount in the three-dimensional direction. As a result, the inspection method allows for more stable contact between the substrate (wafer W) and the multiple probes 33 by moving the mounting stage 45 based on the correction amount in the three-dimensional direction.

[0111] Furthermore, the process of calculating the correction amount in the three-dimensional direction involves setting multiple areas A on the mounting surface 48s of the mounting table 45, obtaining the continuity start position by obtaining the continuity start position for each of the multiple vertices P in the area A where multiple probes 33 are in contact, obtaining the continuity end position by obtaining the continuity end position for each of the multiple vertices P in the area A where multiple probes 33 are in contact, and calculating the correction amount in the three-dimensional direction by calculating the correction amount in the three-dimensional direction for the area A where multiple probes 22 are in contact based on the continuity start position and continuity end position for each of the multiple vertices P. This allows the inspection method to prepare a correction amount in the three-dimensional direction for each of the multiple areas A, making it possible to change the correction amount in the three-dimensional direction according to the area A where multiple probes 33 are in contact during actual electrical inspection. As a result, 3D contact correction can be performed in more detail according to the contact positions of the multiple probes 33.

[0112] Furthermore, the angles of the multiple vertices P that make up area A are 150° or less. This makes it possible to suppress large discrepancies between the contact positions where the multiple probes 33 make contact and the correction amount in the three-dimensional direction of each area A when multiple areas A are set up.

[0113] Furthermore, the multiple areas A are formed in a triangular pattern, aligned along the circumferential direction of the mounting base 45, with the center of the mounting base 45 as the starting point. In this way, the formation of multiple areas A along the circumferential direction of the mounting base 45 allows for obtaining an appropriate correction amount in each circumferential area A for the load applied to the outer periphery of the mounting base 45 from the multiple probes 33.

[0114] Furthermore, the continuity start position is the vertical position at the moment when the first probe 33 among the multiple probes 33 becomes conductive. This allows the inspection method to easily and reliably obtain the continuity start position based on the power change of each probe 33.

[0115] Furthermore, the continuity termination position is the vertical position at the moment when all of the probes 33 are conducting. This allows the inspection method to easily and reliably determine the continuity termination position based on the assumption that the power of each probe 33 is constant.

[0116] Furthermore, the contact state information is imaging information obtained by capturing the needle marks of multiple pads Pd formed by the contact between multiple probes 33 and multiple pads Pd on the substrate (wafer W). By utilizing the needle marks of multiple pads Pd in ​​this way, the inspection method can recognize in detail the contact state between each probe 33 and each pad Pd during movement in the Z-axis direction, and can calculate a more accurate three-dimensional correction amount.

[0117] Furthermore, in calculating the correction amount in the three-dimensional direction, an index of the number of needle marks at multiple coordinates in the vertical direction is obtained, and the correction amount in the three-dimensional direction is calculated based on this index of the number of needle marks. By using an index of the number of needle marks at multiple coordinates in this way, the inspection method can easily obtain the contact state between each probe 33 and each pad Pd and calculate the correction amount in the three-dimensional direction.

[0118] Furthermore, a second aspect of this disclosure is a method for calculating a correction amount to correct the amount of movement of a mounting table 45 on which a substrate (wafer W) is placed when performing an electrical inspection by bringing the substrate (wafer W) into contact with a plurality of probes 33, wherein information on the contact state of the plurality of probes 33 in contact with the substrate is acquired while the mounting table 45 is rising, and a correction amount in the three-dimensional direction is calculated based on the acquired contact state information.

[0119] Furthermore, a third aspect of this disclosure is an inspection apparatus 1 for performing electrical inspection of a substrate (wafer W), comprising: a plurality of probes 33 that contact the substrate to perform electrical inspection; a mounting table 45 on which the substrate is placed; and a control unit (main control unit 81) that controls the operation of the mounting table 45. The control unit performs a process to calculate a three-dimensional correction amount when moving the mounting table 45 in a three-dimensional direction before performing the electrical inspection, and a process to move the mounting table 45 based on the calculated three-dimensional correction amount when performing the electrical inspection. In the process of calculating the three-dimensional correction amount, while the mounting table 45 is being raised, information on the contact state of the plurality of probes 33 in contact with the substrate is acquired, and the three-dimensional correction amount is calculated based on the acquired contact state information.

[0120] In the second and third embodiments described above, the probe and the substrate can be made to make contact with high precision by obtaining a correction amount that includes individual differences in the device, probe card, and substrate.

[0121] The inspection method, correction amount calculation method, and inspection apparatus 1 according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways and combined in a non-consistent manner. [Explanation of Symbols]

[0122] 1. Inspection device 33 probes 45 Mounting platform 81 Main Control Unit W wafer

Claims

1. An inspection method that performs electrical testing by bringing multiple probes into contact with a substrate, Before performing the aforementioned electrical inspection, a step is made to calculate the amount of correction in the three-dimensional direction when moving the mounting table on which the substrate is placed in the three-dimensional direction, The process includes moving the aforementioned mounting stand based on the calculated correction amount in the three-dimensional direction during the electrical inspection, The process of calculating the correction amount in the three-dimensional direction is as follows: Multiple areas are set on the mounting surface of the aforementioned mounting platform, While the mounting platform is being raised, information is acquired regarding the contact state of the plurality of probes in contact with the substrate, including the starting position of conductivity for each of the plurality of vertices in the area where the plurality of probes are in contact with the substrate when the plurality of probes make contact with the substrate and conductivity begins, and the ending position of conductivity for each of the plurality of vertices in the area where the plurality of probes are in contact with the substrate when conductivity between the plurality of probes and the substrate is completed after the acquisition of the starting position of conductivity. Based on the acquired conductivity start position and conductivity end position for each of the multiple vertices, the correction amount in the three-dimensional direction of the area in contact with the multiple probes is calculated. Testing method.

2. In calculating the correction amount in the three-dimensional direction, the conduction movement range between the conduction start position and the conduction end position is calculated, and the correction amount in the three-dimensional direction is calculated based on the conduction movement range. The inspection method according to claim 1.

3. In calculating the correction amount in the three-dimensional direction, the larger the conductive movement range, the larger the correction amount in the three-dimensional direction. The inspection method according to claim 2.

4. The angles of the multiple vertices constituting the area are 150° or less. The inspection method according to claim 1.

5. The aforementioned multiple areas are formed in the shape of triangles arranged along the circumferential direction of the mounting base, with the center of the mounting base described above as the starting point. The inspection method according to claim 1.

6. The aforementioned conductivity start position is the vertical position at the time when the first probe among the plurality of probes becomes conductive. The inspection method according to any one of claims 1 to 3.

7. The aforementioned conductivity termination position is the vertical position at the moment when all of the multiple probes are conductive. The inspection method according to any one of claims 1 to 3.

8. An inspection method for performing electrical testing by bringing a substrate into contact with a plurality of probes, Before performing the aforementioned electrical inspection, a step is made to calculate the amount of correction in the three-dimensional direction when moving the mounting table on which the substrate is placed in the three-dimensional direction, The process includes moving the aforementioned mounting stand based on the calculated correction amount in the three-dimensional direction during the electrical inspection, The process of calculating the correction amount in the three-dimensional direction is as follows: As information on the contact state in which the plurality of probes contact the substrate, imaging information is obtained by imaging the needle marks of the plurality of pads formed by the contact between the plurality of probes and the plurality of pads on the substrate while the aforementioned stand is being raised. Using the acquired imaging information, an index of the number of needle marks at multiple coordinates in the vertical direction is obtained, and the correction amount in the three-dimensional direction is calculated based on the index of the number of needle marks. Testing method.

9. A method for calculating a correction amount to correct the three-dimensional movement of a mounting platform on which a substrate is placed when performing electrical testing by making contact between multiple probes and the substrate, Multiple areas are set on the mounting surface of the aforementioned mounting platform, While the mounting platform is being raised, information is acquired regarding the contact state of the plurality of probes in contact with the substrate, including the starting position of conductivity for each of the plurality of vertices in the area where the plurality of probes are in contact with the substrate when the plurality of probes make contact with the substrate and conductivity begins, and the ending position of conductivity for each of the plurality of vertices in the area where the plurality of probes are in contact with the substrate when conductivity between the plurality of probes and the substrate is completed after the acquisition of the starting position of conductivity. Based on the acquired conductivity start position and conductivity end position for each of the multiple vertices, the correction amount in the three-dimensional direction of the area in contact with the multiple probes is calculated. Correction amount calculation method.

10. A method for calculating a correction amount to correct the amount of movement in the three-dimensional direction of a mounting platform on which a substrate is placed when performing an electrical inspection by bringing the substrate into contact with multiple probes, As information on the contact state in which the plurality of probes contact the substrate, imaging information is obtained by imaging the needle marks of the plurality of pads formed by the contact between the plurality of probes and the plurality of pads on the substrate while the aforementioned stand is being raised. Using the acquired imaging information, an index of the number of needle marks at multiple coordinates in the vertical direction is obtained, and the correction amount in the three-dimensional direction is calculated based on the index of the number of needle marks. Correction amount calculation method.

11. An inspection device for performing electrical testing of a circuit board, Multiple probes that contact the substrate to perform the electrical test, A mounting platform on which the aforementioned substrate is placed, Includes a control unit that controls the operation of the mounting platform, The control unit, Before performing the aforementioned electrical inspection, a process is performed to calculate the three-dimensional correction amount when moving the aforementioned mounting stand in the three-dimensional direction, During the electrical inspection, the process of moving the aforementioned mounting stand based on the calculated correction amount in the three-dimensional direction is performed. In the process of calculating the correction amount in the three-dimensional direction, Multiple areas are set on the mounting surface of the aforementioned mounting platform, While the mounting platform is being raised, information is acquired regarding the contact state of the plurality of probes in contact with the substrate, including the starting position of conductivity for each of the plurality of vertices in the area where the plurality of probes are in contact with the substrate when the plurality of probes make contact with the substrate and conductivity begins, and the ending position of conductivity for each of the plurality of vertices in the area where the plurality of probes are in contact with the substrate when conductivity between the plurality of probes and the substrate is completed after the acquisition of the starting position of conductivity. Based on the acquired conductivity start position and conductivity end position for each of the multiple vertices, the correction amount in the three-dimensional direction of the area in contact with the multiple probes is calculated. Inspection device.

12. An inspection apparatus for performing electrical testing of a substrate, Multiple probes that contact the substrate to perform the electrical test, A mounting platform on which the aforementioned substrate is placed, Includes a control unit that controls the operation of the mounting platform, The control unit, Before performing the aforementioned electrical inspection, a process is performed to calculate the three-dimensional correction amount when moving the aforementioned mounting stand in the three-dimensional direction, During the electrical inspection, the process of moving the aforementioned mounting stand based on the calculated correction amount in the three-dimensional direction is performed. In the process of calculating the correction amount in the three-dimensional direction, As information on the contact state in which the plurality of probes contact the substrate, imaging information is obtained by imaging the needle marks of the plurality of pads formed by the contact between the plurality of probes and the plurality of pads on the substrate while the aforementioned stand is being raised. Using the acquired imaging information, an index of the number of needle marks at multiple coordinates in the vertical direction is obtained, and the correction amount in the three-dimensional direction is calculated based on the index of the number of needle marks. Inspection device.

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