Light-emitting device manufacturing apparatus

Abstract

Provided is a light-emitting device manufacturing apparatus capable of continuously carrying out the steps from formation to sealing of a light-emitting element. This light-emitting device manufacturing apparatus is capable of forming a minute organic EL device having high luminance and high reliability, said manufacturing apparatus being capable of continuously carrying out a film formation step for forming an organic EL device, a lithography step, an etching step, and a sealing step by means of the formation of a protective layer in said order. In addition, the manufacturing apparatus is of an in-line type in which devices are arranged in the order of the manufacturing steps of the light-emitting device, and is capable of carrying out the manufacturing with high throughput.

Description

Light-emitting device manufacturing equipment

[0001] One embodiment of the present invention relates to an apparatus and a method for manufacturing a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, and an operation method thereof or a manufacturing method thereof.

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers. Furthermore, stationary display devices such as televisions and monitors are also required to have higher definitions in line with the trend toward higher resolutions. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices applicable to the display panel include liquid crystal display devices, light-emitting devices equipped with light-emitting elements such as organic EL (Electro Luminescence) elements or light-emitting diodes (LEDs: Light Emitting Diodes), and electronic paper that displays using an electrophoresis method.

[0005] For example, an organic EL element has a structure in which a layer containing a light-emitting organic compound is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in liquid crystal display devices and the like, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1.

[0006] JP 2002-324673 A

[0007] Known organic EL display devices capable of full color display include a configuration in which a white light-emitting element is combined with a color filter, and a configuration in which RGB light-emitting elements are formed on the same surface.

[0008] The latter configuration is ideal in terms of power consumption, and currently, in the manufacture of small and medium-sized panels, the luminescent materials are painted separately using metal masks, etc. However, because the process using metal masks has low alignment accuracy, the area occupied by the luminescent element within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks pose challenges in increasing pixel density or light emission intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting element using a lithography process or other method. However, the reliability of the materials that make up the light-emitting element deteriorates when impurities (such as water, oxygen, and hydrogen) enter the atmosphere. Therefore, multiple processes must be performed under a controlled atmosphere.

[0010] Alternatively, when light-emitting devices are produced using a vacuum deposition method that uses a metal mask, multiple lines of manufacturing equipment are required. For example, because the metal mask needs to be cleaned periodically, at least two or more lines of manufacturing equipment must be prepared, and one manufacturing equipment must be used for production while the other is under maintenance. Therefore, when considering mass production, multiple lines of manufacturing equipment are required. Therefore, there is a problem in that the initial investment for introducing the manufacturing equipment is very large.

[0011] In addition, small, high-resolution displays are desired for AR and VR applications. Displays for AR and VR applications are preferably narrow-framed because they are installed in devices such as glasses or goggles with small volumes. Therefore, it is preferable to provide drivers for pixel circuits below the pixel circuits.

[0012] Therefore, one object of one embodiment of the present invention is to provide a manufacturing apparatus for a light-emitting device that can continuously perform steps from forming a light-emitting element to sealing without exposure to the atmosphere, or to provide a manufacturing apparatus for a light-emitting device that can form a light-emitting element without using a metal mask, or to provide a manufacturing method for a light-emitting device.

[0013] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0014] One aspect of the present invention relates to an apparatus for manufacturing a light-emitting device.

[0015] A first aspect of the present invention has first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster is connected to the second cluster via the first load lock chamber, the second cluster is connected to the third cluster via the second load lock chamber, the third cluster is connected to the fourth cluster via the third load lock chamber, the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, and the fifth cluster is connected to the sixth cluster via the sixth load lock chamber. The sixth cluster is connected to the seventh cluster through the sixth load lock chamber, the seventh cluster is connected to the eighth cluster through the seventh load lock chamber, the eighth cluster is connected to the ninth cluster through the eighth load lock chamber, the ninth cluster is connected to the tenth cluster through the ninth load lock chamber, and the tenth cluster is connected to the eleventh cluster through the tenth load lock chamber, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster are controlled to a reduced pressure, the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster are controlled to an inert gas atmosphere, the first cluster, the fourth cluster, and the seventh cluster each have a first conveying device and a plurality of film forming devices, the third cluster, the sixth cluster, and the ninth cluster each have a second conveying device, an etching device, and an ashing device, the second cluster, the fifth cluster, and the eighth cluster each have a third conveying device and a plurality of devices for performing a lithography process, the tenth cluster has a fourth conveying device and an etching device, and the eleventh cluster has a fifth conveying device and a plurality of film forming devices, the first conveying device has a portion for fixing a substrate, and by rotating the portion, the substrate can be flipped.

[0016] A second aspect of the present invention has first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster is connected to the second cluster via the first load lock chamber, the second cluster is connected to the third cluster via the second load lock chamber, the third cluster is connected to the fourth cluster via the third load lock chamber, the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, the fifth cluster is connected to the sixth cluster via the fifth load lock chamber, and the sixth cluster is connected to the seventh cluster via the seventh load lock chamber. The seventh cluster is connected to the eighth cluster via the seventh load lock chamber, the eighth cluster is connected to the ninth cluster via the eighth load lock chamber, the ninth cluster is connected to the tenth cluster via the ninth load lock chamber, the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber, and the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster are controlled to a reduced pressure. The second cluster, the fifth cluster, the eighth cluster, and the tenth cluster are controlled to an inert gas atmosphere, the first cluster, the fourth cluster, and the seventh cluster each have a first transfer device, a substrate transfer device, and a plurality of film forming devices, the third cluster, the sixth cluster, and the ninth cluster each have a second transfer device, an etching device, and an ashing device, and the second cluster, the fifth cluster, and the eighth cluster each have a third transfer device and a plurality of devices for performing a lithography process. The tenth cluster has a fourth transport device and an etching device, the eleventh cluster has a fifth transport device and multiple film forming devices, the substrate transfer device has a stage, a sixth transport device and a seventh transport device, a mask jig can be placed on the stage, the first transport device can transport the mask jig with a substrate attached, the sixth transport device can invert the substrate and attach it to the mask jig, and the seventh transport device is a manufacturing device that can remove the substrate attached to the mask jig and invert it.

[0017] In a second aspect of the present invention, the substrate transfer device is provided with a camera, and the sixth transport device is provided with a substrate rotation mechanism, and the camera and substrate rotation mechanism can be used to align the substrate and attach it to the mask jig.

[0018] In the second aspect of the present invention, a plurality of substrates can be mounted on the mask jig.

[0019] In the first and second aspects of the present invention, there is provided a twelfth cluster and an eleventh load lock chamber, the twelfth cluster is connected to the first cluster via the eleventh load lock chamber, the twelfth cluster is controlled to have an inert gas atmosphere, and the twelfth cluster can have a cleaning device and a baking device.

[0020] Additionally, the twelfth cluster may include a load chamber, and the eleventh cluster may include an unload chamber.

[0021] The system may further include a thirteenth cluster, a fourteenth cluster, a twelfth load lock chamber, and a thirteenth load lock chamber, wherein the thirteenth cluster is connected to the third cluster via the third load lock chamber, the thirteenth cluster is connected to the fourth cluster via the twelfth load lock chamber, the fourteenth cluster is connected to the sixth cluster via the sixth load lock chamber, and the fourteenth cluster is connected to the seventh cluster via the thirteenth load lock chamber, the thirteenth cluster and the fourteenth cluster are controlled to an inert gas atmosphere, and the thirteenth cluster and the fourteenth cluster may include a cleaning device and a baking device.

[0022] The film forming apparatus is preferably one or more selected from a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.

[0023] The etching apparatuses included in the third cluster, the sixth cluster, and the ninth cluster are preferably dry etching apparatuses.

[0024] The etching device in the tenth cluster is preferably a wet etching device.

[0025] The multiple devices that perform the lithography process may include a coating device, an exposure device, a developing device, and a baking device, or may include a coating device and a nanoimprint device.

[0026] The substrate may be a silicon wafer. Each film forming apparatus is provided with an alignment mechanism and a mask jig, and the alignment mechanism can bring the substrate and the mask jig into close contact with each other.

[0027] By using one embodiment of the present invention, it is possible to provide a manufacturing apparatus for a light-emitting device that can continuously perform steps from formation of a light-emitting element to sealing without exposure to the atmosphere, or a manufacturing apparatus for a light-emitting device that can form a light-emitting element without using a metal mask, or a manufacturing method for a light-emitting device.

[0028] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0029] FIG. 1 is a block diagram illustrating a manufacturing apparatus. FIG. 2 is a diagram illustrating a manufacturing apparatus. FIG. 3 is a diagram illustrating a manufacturing apparatus. FIG. 4 is a diagram illustrating a manufacturing apparatus. FIG. 5 is a diagram illustrating a manufacturing apparatus. FIG. 6 is a block diagram illustrating a manufacturing apparatus. FIG. 7 is a diagram illustrating a manufacturing apparatus. FIG. 8 is a diagram illustrating a manufacturing apparatus. FIG. 9 is a block diagram illustrating a manufacturing apparatus. FIG. 10 is a diagram illustrating a manufacturing apparatus. FIG. 11 is a diagram illustrating a manufacturing apparatus. FIGS. 12A to 12C are diagrams illustrating substrate transportation. FIGS. 13A to 13C are diagrams illustrating substrate transportation. FIG. 14A is a diagram illustrating a vacuum process apparatus. FIG. 14B is a diagram illustrating substrate loading into a vacuum process apparatus. FIGS. 15A to 15C are diagrams illustrating an example of the number of display devices per substrate. FIG. 16 is a block diagram illustrating a manufacturing apparatus. FIG. 17 is a diagram illustrating a manufacturing apparatus. FIG. 18 is a diagram illustrating a manufacturing apparatus. FIG. 19 is a diagram illustrating a manufacturing apparatus. FIG. 20 is a diagram illustrating a manufacturing apparatus. FIG. 21 is a block diagram illustrating a manufacturing apparatus. FIG. 22 is a diagram illustrating a manufacturing apparatus. FIG. 23 is a diagram illustrating a manufacturing apparatus. FIGS. 24A to 24C are diagrams illustrating substrate transportation. FIGS. 25A to 25C are diagrams illustrating substrate transportation. FIGS. 26A and 26B are diagrams illustrating substrate transportation. FIG. 27A is a diagram illustrating a cross section of a transportation apparatus and a mask jig. FIG. 27B is a diagram illustrating a cross section of a mask jig. FIGS. 27C and 27D are diagrams illustrating a mask jig. FIG. 28A is a diagram illustrating a vacuum process apparatus. FIG. 28B is a diagram illustrating a cooling plate. FIG. 28C is a diagram illustrating a cross section of a cooling plate. FIG. 29 is a diagram illustrating a display device. FIGS. 30A to 30C are diagrams illustrating a display device. FIGS. 31A to 31D are diagrams illustrating a method for manufacturing a display device. FIGS. 32A to 32D are diagrams illustrating a method for manufacturing a display device. FIGS. 33A to 33E are diagrams illustrating a method for manufacturing a display device. 34 and 35 are diagrams illustrating a manufacturing apparatus.

[0030] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. In addition, hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0031] Embodiment 1 In this embodiment, a manufacturing apparatus for a light-emitting device according to one embodiment of the present invention will be described with reference to the drawings.

[0032] One aspect of the present invention is a manufacturing apparatus used to form a display device having light-emitting elements (also called light-emitting devices) such as organic EL elements. To miniaturize the organic EL elements or increase the area occupied by pixels, a lithography process is preferably used. However, the intrusion of impurities such as water, oxygen, and hydrogen into the organic EL elements can impair their reliability. Therefore, it is necessary to take measures such as controlling the atmosphere to a low dew point from the manufacturing stage so that the surface and side surfaces of the patterned organic layer are not exposed to the atmosphere.

[0033] The manufacturing apparatus of one embodiment of the present invention can continuously perform the film formation process, lithography process, etching process, and sealing process for forming an organic EL element without exposure to the atmosphere. Therefore, it is possible to form a fine, high-brightness, and highly reliable organic EL element. Furthermore, it is an in-line type in which the apparatus is arranged in the order of the light-emitting device processes, allowing for high-throughput manufacturing.

[0034] Furthermore, a silicon wafer can be used as a support substrate for forming the organic EL elements. A silicon wafer on which a driving circuit, a pixel circuit, and the like are already formed can be used as the support substrate, and the organic EL elements can be formed on these circuits. Therefore, a display device with a narrow frame suitable for AR or VR can be formed. The silicon wafer preferably has a diameter of 8 inches or more (e.g., 12 inches).

[0035] <Configuration Example 1> Figure 1 is a block diagram illustrating a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The manufacturing apparatus has multiple clusters arranged in the order of processes. In this specification, a group of devices that share a transport device or the like is referred to as a cluster. A substrate on which a light-emitting device is to be formed moves through the clusters in order and undergoes each process.

[0036] 1 is an example of a manufacturing apparatus having clusters C1 to C14. Clusters C1 to C14 are connected in order, and a substrate 60a input into cluster C1 can be taken out from cluster C14 as a substrate 60b on which a light-emitting device is formed.

[0037] Here, clusters C1, C3, C5, C7, C9, C11, and C13 have equipment groups for performing processes under controlled atmosphere, and clusters C2, C4, C6, C10, C12, and C14 have equipment groups for performing vacuum processes (reduced pressure processes).

[0038] Clusters C1, C5, and C9 mainly include equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly include equipment for forming organic compounds contained in light-emitting devices. Clusters C3, C7, and C11 mainly include equipment for performing lithography processes. Clusters C4, C8, and C12 mainly include equipment for performing etching and ashing processes. Cluster C13 mainly includes equipment for etching processes and cleaning substrates. Cluster C14 mainly includes equipment for forming organic compounds contained in light-emitting devices and equipment for forming protective films that seal light-emitting devices.

[0039] Next, the clusters C1 to C14 will be described in detail with reference to FIGS.

[0040] <Clusters C1 to C4> Figure 2 is a top view illustrating clusters C1 to C4. Cluster C1 is connected to cluster C2 via load lock chamber B1. Cluster C2 is connected to cluster C3 via load lock chamber B2. Cluster C3 is connected to cluster C4 via load lock chamber B3. Cluster C4 is connected to cluster C5 (see Figure 3) via load lock chamber B4.

[0041] <Atmospheric Pressure Process Equipment A> Cluster C1 and cluster C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly performs processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 also has a load chamber LD.

[0042] The number of atmospheric pressure process devices A in each cluster may be one or more depending on the purpose. The atmospheric pressure process devices A are not limited to processes under atmospheric pressure, and may be controlled to a pressure slightly negative or positive than atmospheric pressure. Furthermore, when multiple atmospheric pressure process devices A are provided, the atmospheric pressures may be different for each device.

[0043] The transfer chambers TF1 and TF3 and the atmospheric pressure process device A are connected to valves for introducing an inert gas (IG), allowing for control of the inert gas atmosphere. The inert gas may be nitrogen or a noble gas such as argon or helium. It is also preferable that the inert gas has a low dew point (for example, minus 50°C or less). By performing the process in an inert gas atmosphere with a low dew point, it is possible to prevent the incorporation of impurities and form highly reliable organic EL elements.

[0044] The atmospheric pressure process equipment A of the cluster C1 may be a cleaning equipment, a baking equipment, etc. For example, a spin cleaning equipment, a hot plate type baking equipment, etc. The baking equipment may be a vacuum baking equipment.

[0045] The atmospheric pressure process equipment A of cluster C3 can be an equipment for performing a lithography process. For example, when performing a photolithography process, a resin (photoresist) coating equipment, an exposure equipment, a developing equipment, a baking equipment, etc. can be applied. When performing a lithography process using nanoimprinting, a resin (UV curable resin, etc.) coating equipment, a nanoimprinting equipment, etc. can be applied. In addition, depending on the application, a cleaning equipment, a wet etching equipment, a coating equipment, a resist stripping equipment, etc. can also be applied to the atmospheric pressure process equipment A.

[0046] Cluster C1 shows an example in which atmospheric pressure process equipment A1 and A2 are each connected to transfer chamber TF1 via a gate valve. Cluster C3 shows an example in which atmospheric pressure process equipment A3 to A7 are each connected to transfer chamber TF3 via a gate valve. The provision of gate valves enables air pressure control, inert gas species control, and cross-contamination prevention.

[0047] The transfer chamber TF1 is connected to the load chamber LD via a gate valve. It is also connected to the load lock chamber B1 via another gate valve. A transfer device 70a is provided in the transfer chamber TF1. The transfer device 70a can transfer a substrate from the load chamber LD to the atmospheric pressure process equipment A. It can also transfer a substrate removed from the atmospheric pressure process equipment A to the load lock chamber B1.

[0048] Transfer chamber TF3 is connected to load lock chamber B2 via a gate valve, and also to load lock chamber B3 via another gate valve. Transfer chamber TF3 is provided with a transfer device 70b. Transfer device 70b can transfer substrates from load lock chamber B2 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B3.

[0049] <Vacuum Process Apparatus V> Cluster C2 and cluster C4 have vacuum process apparatus V. Cluster C2 has a transfer chamber TF2 and vacuum process apparatus V (vacuum process apparatus V1 to V4). Cluster C4 has a transfer chamber TF4 and vacuum process apparatus V (vacuum process apparatus V5 and V6).

[0050] The number of vacuum process devices V in each cluster may be one or more depending on the purpose. A vacuum pump VP is connected to the vacuum process device V, and a gate valve is provided between each vacuum process device V and the transfer chamber TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process device V.

[0051] The vacuum process refers to a process carried out in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only a process under high vacuum, but also a process in which a process gas is introduced and pressure is controlled under reduced pressure.

[0052] The transfer chambers TF2 and TF4 are also provided with independent vacuum pumps VP, which can prevent cross-contamination during the process carried out in the vacuum process device V.

[0053] The vacuum process equipment V of the cluster C2 may be, for example, a deposition equipment such as an evaporation equipment, a sputtering equipment, a CVD (Chemical Vapor Deposition) equipment, or an ALD (Atomic Layer Deposition) equipment. The CVD equipment may be, for example, a thermal CVD equipment using heat, or a PECVD (Plasma Enhanced CVD) equipment using plasma. The ALD equipment may be, for example, a thermal ALD equipment using heat, or a PEALD (Plasma Enhanced ALD) equipment using plasma-excited reactants.

[0054] The vacuum process equipment V included in the cluster C4 may be, for example, a dry etching equipment or an ashing equipment.

[0055] Transfer chamber TF2 is connected to load lock chamber B1 via a gate valve, and to load lock chamber B2 via another gate valve. A transfer device 71a is provided in transfer chamber TF2. The transfer device 71a can invert a substrate placed in load lock chamber B1 and transfer it to the vacuum process device V. The transfer device 71a can also invert a substrate removed from the vacuum process device V and transfer it to load lock chamber B2.

[0056] The transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve, and also to the load lock chamber B4 via another gate valve. A transfer device 70c is provided in the transfer chamber TF4. The transfer device 70c can transfer the wafer from the load lock chamber B3 to the vacuum process device V and then back to the load lock chamber B4.

[0057] The load-lock chambers B1, B2, B3, and B4 are each equipped with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load-lock chambers B1, B2, B3, and B4 can be controlled to have a reduced pressure or an inert gas atmosphere. For example, when transferring a substrate from cluster C2 to cluster C3, the load-lock chamber B2 can be depressurized, the substrate can be transferred from cluster C2, and the inert gas atmosphere can be restored in the load-lock chamber B2 before the substrate is transferred to cluster C3.

[0058] The transport devices 70a, 70b, and 70c each have a mechanism for transporting a substrate placed on a hand unit. Since the transport devices 70b and 70c are operated under normal pressure, the hand unit may be provided with a vacuum suction mechanism or the like. The transport device 71a has a mechanism for transporting a substrate by fixing it to the hand unit. Since the transport device 71a is operated under reduced pressure, an electrostatic suction mechanism or the like can be used as a fixing method.

[0059] As described above, since the transport devices 70a, 70b, and 70c have different configurations from the transport device 71a, the load lock chambers B1 and B2 are provided with stages 80a and 80b that can place substrates on pins. The load lock chambers B3 and B4 are provided with stages 81a and 81b that can place substrates on their surfaces. These are merely examples, and stages with other configurations may also be used. Details of the transfer of substrates in the load lock chamber B1 will be described later.

[0060] <Clusters C5 to C8> Figure 3 is a top view illustrating clusters C5 to C8. Cluster C5 is connected to cluster C6 via load lock chamber B5. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C9 (see Figure 4) via load lock chamber B8.

[0061] The basic configurations of clusters C5 to C8 are the same as those of clusters C1 to C4, with cluster C5 corresponding to cluster C1, cluster C6 corresponding to cluster C2, cluster C7 corresponding to cluster C3, and cluster C8 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B4 in cluster C5.

[0062] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0063] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0064] Cluster C5 and cluster C7 each have atmospheric pressure process equipment A. Cluster C5 has a transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly performs processes under atmospheric pressure. Cluster C7 has a transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0065] Transfer chamber TF5 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B5 via another gate valve. Transfer chamber TF5 is provided with a transfer device 70d. Transfer device 70d can transfer substrates from load lock chamber B4 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B5.

[0066] Transfer chamber TF7 is also connected to load lock chamber B6 via a gate valve. It is also connected to load lock chamber B7 via another gate valve. A transfer device 70e is provided in transfer chamber TF7. Transfer device 70d can transfer substrates from load lock chamber B6 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B7.

[0067] Cluster C6 and cluster C8 each have a vacuum process device V. Cluster C6 has a transfer chamber TF6 and vacuum process devices V (vacuum process devices V7 to V10). Cluster C8 has a transfer chamber TF8 and vacuum process devices V (vacuum process devices V11 and V12).

[0068] Transfer chamber TF6 is connected to load lock chamber B5 via a gate valve, and also to load lock chamber B6 via another gate valve. Transfer chamber TF6 is provided with a transfer device 71b. Transfer device 71b can invert a substrate placed in load lock chamber B5 and transfer it to vacuum process device V. It can also invert a substrate removed from vacuum process device V and transfer it to load lock chamber B6.

[0069] Transfer chamber TF8 is connected to load lock chamber B7 via a gate valve, and also to load lock chamber B8 via another gate valve. Transfer chamber TF8 is provided with a transfer device 70f. Transfer device 70f can transfer substrates from load lock chamber B7 to vacuum process device V. It can also unload substrates removed from vacuum process device V into load lock chamber B8.

[0070] Load lock chambers B5 and B6 are provided with stages 80c and 80d on which a substrate can be placed on pins, while load lock chambers B7 and B8 are provided with stages 81c and 81d on which a substrate can be placed.

[0071] <Clusters C9 to C12> Figure 4 is a top view illustrating clusters C9 to C12. Cluster C9 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 via load lock chamber B10. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 (see Figure 5) via load lock chamber B12.

[0072] The basic configurations of clusters C9 to C12 are similar to those of clusters C1 to C4, with cluster C9 corresponding to cluster C1, cluster C10 corresponding to cluster C2, cluster C11 corresponding to cluster C3, and cluster C12 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B8 in cluster C9.

[0073] Furthermore, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0074] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0075] Cluster C9 and cluster C11 each have atmospheric pressure process equipment A. Cluster C9 has a transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly performs processes under atmospheric pressure. Cluster C11 has a transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0076] Transfer chamber TF9 is connected to load lock chamber B8 via a gate valve. It is also connected to load lock chamber B9 via another gate valve. A transfer device 70g is provided in transfer chamber TF9. The transfer device 70g can transfer substrates from load lock chamber B8 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B9.

[0077] The transfer chamber TF11 is also connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transfer device 70h is provided in the transfer chamber TF11. The transfer device 70h can transfer a substrate from the load lock chamber B10 to the atmospheric pressure process equipment A. The transfer device 70h can also transfer a substrate removed from the atmospheric pressure process equipment A to the load lock chamber B11.

[0078] Cluster C10 and cluster C12 each have a vacuum process device V. Cluster C10 has a transfer chamber TF10 and vacuum process devices V (vacuum process devices V13 to V16). Cluster C12 has a transfer chamber TF12 and vacuum process devices V (vacuum process devices V17 and V18).

[0079] The transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. A transfer device 71c is provided in the transfer chamber TF10. The transfer device 71c can invert a substrate placed in the load lock chamber B9 and transfer it to the vacuum process device V. It can also invert a substrate removed from the vacuum process device V and transfer it to the load lock chamber B10.

[0080] The transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve, and also to the load lock chamber B12 via another gate valve. A transfer device 70i is provided in the transfer chamber TF12. The transfer device 70i can transfer a substrate from the load lock chamber B11 to the vacuum process device V and then unload it into the load lock chamber B12.

[0081] Load lock chambers B9 and B10 are provided with stages 80e and 80f on which a substrate can be placed on pins, while load lock chambers B11 and B12 are provided with stages 81e and 81f on which a substrate can be placed.

[0082] 5 is a top view illustrating clusters C13 and C14. Cluster C13 is connected to cluster C14 via load lock chamber B13. Descriptions common to clusters C1, C2, etc. will be omitted.

[0083] Cluster C13 has atmospheric pressure process equipment A. Cluster C13 has transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22, A23) that mainly performs processes under atmospheric pressure.

[0084] The atmospheric pressure process equipment A of the cluster C13 may be an etching equipment, a baking equipment, or the like. For example, it may be a wet etching equipment, a hot plate type baking equipment, or the like. The baking equipment may be a vacuum baking equipment.

[0085] The transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer a substrate from the load lock chamber B12 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B13.

[0086] As the vacuum process equipment V of the cluster C14, for example, a deposition equipment such as a vapor deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, and an opposing substrate bonding equipment can be applied.

[0087] The load lock chamber B13 is provided with a vacuum pump VP and a valve for introducing an inert gas, so that the load lock chamber B13 can be controlled to a reduced pressure or an inert gas atmosphere.

[0088] The transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve, and also to the unload chamber ULD via another gate valve. A transfer device 70k is provided in the transfer chamber TF14. The transfer device 70k can transfer a substrate from the load lock chamber B13 to the vacuum process device V. The transfer device 70k can also unload a substrate removed from the vacuum process device V into the unload chamber ULD.

[0089] By using the manufacturing apparatus configured as described above, a highly reliable light emitting device sealed with a protective film can be formed.

[0090] For example, successive steps can be performed in an atmosphere-controlled apparatus, from forming organic EL elements emitting light of a first color in clusters C1 to C4, forming organic EL elements emitting light of a second color in clusters C5 to C8, forming organic EL elements emitting light of a third color in clusters C9 to C12, removing unnecessary elements in cluster C13, and forming a protective film in cluster C14. Details of these steps will be described later.

[0091] <Configuration Example 2> Figure 6 is a block diagram illustrating a light-emitting device manufacturing apparatus different from that shown in Figure 1. The manufacturing apparatus shown in Figure 6 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14, and is configured by omitting clusters C5 and C9 from the manufacturing apparatus shown in Figure 1. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and substrate 60a introduced into cluster C1 can be removed from cluster C14 as substrate 60b on which a light-emitting device is formed.

[0092] In the manufacturing equipment shown in FIG. 1 , clusters C5 and C9 have a cleaning device and a baking device. The processes preceding the cleaning process are etching (dry etching) and ashing. If residual gas components, residues, deposits, etc. from these processes do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, there is no need to consider residual moisture on the substrate, and therefore the baking process can also be omitted. Therefore, in some cases, the configuration of FIG. 6 may be adopted, in which clusters C5 and C9 are omitted from the manufacturing equipment shown in FIG. 1 . By omitting clusters C5 and C9, the total number of clusters and the number of load-lock chambers can be reduced.

[0093] <Clusters C1 to C4> The configuration of clusters C1 to C4 can be the same as the configuration shown in Fig. 2. However, the load lock chamber B4 is connected to cluster C6.

[0094] <Clusters C6, C7, C8, C10> Figure 7 is a top view illustrating clusters C6, C7, C8, and C10. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 (see Figure 8) via load lock chamber B10.

[0095] The following describes the configuration of connections between the clusters. For details of the clusters and the load lock chambers, please refer to the descriptions of the clusters C6, C7, C8, and C10 and the load lock chambers B4, B7, B9, and B10.

[0096] Transfer chamber TF6 of cluster C6 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B6 via another gate valve. Transfer chamber TF6 is provided with a transfer device 71b. Transfer device 71b can invert a substrate placed in load lock chamber B4 and transfer it to vacuum process device V. It can also invert a substrate removed from vacuum process device V and transfer it to load lock chamber B6.

[0097] The transfer chamber TF7 of the cluster C7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transfer device 70e is provided in the transfer chamber TF7. The transfer device 70e can transfer a substrate from the load lock chamber B6 to the atmospheric pressure process equipment A. It can also transfer a substrate removed from the atmospheric pressure process equipment A to the load lock chamber B7.

[0098] The transfer chamber TF8 of the cluster C8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transfer device 70f is provided in the transfer chamber TF8. The transfer device 70f can transfer a substrate from the load lock chamber B7 to the vacuum process device V. It can also unload the substrate taken out of the vacuum process device V into the load lock chamber B9.

[0099] The transfer chamber TF10 of the cluster C10 is connected to the load lock chamber B9 via a gate valve. It is also connected to the load lock chamber B10 via another gate valve. A transfer device 71c is provided in the transfer chamber TF10. The transfer device 71c can invert a substrate placed in the load lock chamber B9 and transfer it to the vacuum process device V. It can also invert a substrate removed from the vacuum process device V and transfer it to the load lock chamber B10.

[0100] <Clusters C11, C12, C13, C14> Figure 8 is a top view illustrating clusters C11, C12, C13, and C14. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 via load lock chamber B12. Cluster C13 is connected to cluster C14 via load lock chamber B13.

[0101] The following describes the configuration of connections between the clusters. For details of the clusters and the load lock chambers, please refer to the descriptions of the clusters C11, C12, C13, and C14 and the load lock chambers B11, B12, and B13.

[0102] The transfer chamber TF11 of the cluster C11 is connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transfer device 70h is provided in the transfer chamber TF6. The transfer device 70h can transfer a substrate from the load lock chamber B10 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B11.

[0103] The transfer chamber TF12 of the cluster C12 is connected to the load lock chamber B11 via a gate valve. It is also connected to the load lock chamber B12 via another gate valve. A transfer device 70i is provided in the transfer chamber TF12. The transfer device 70i can transfer a substrate from the load lock chamber B11 to the vacuum process device V. It can also transfer a substrate removed from the vacuum process device V to the load lock chamber B12.

[0104] The transfer chamber TF13 of the cluster C13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer a substrate from the load lock chamber B12 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B13.

[0105] The transfer chamber TF14 of the cluster C14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve. A transfer device 70k is provided in the transfer chamber TF13. The transfer device 70k can transfer a substrate from the load lock chamber B13 to the vacuum process device V. It can also unload the substrate taken out of the vacuum process device V into the unload chamber ULD.

[0106] <Configuration Example 3> Fig. 9 is a block diagram showing a modification of the light-emitting device manufacturing apparatus shown in Fig. 6. In the manufacturing apparatus shown in Fig. 9, clusters C4 and C6 are grouped together as one cluster, and clusters C8 and C10 are grouped together as one cluster. The names of these integrated clusters are cluster C4+C6 and cluster C8+C10.

[0107] 6, cluster C4 is connected to cluster C6 via load lock chamber B4, that is, substrates are transported from cluster C4 to cluster C6 for processing.

[0108] Here, cluster C4 and cluster C6 are both clusters that have vacuum process apparatus V. Although there is an upper limit to the number of vacuum process apparatuses that can be connected to a transfer chamber, clusters C4 and C6 can be integrated as long as the number of vacuum process apparatus V that they have is equal to or less than the upper limit. The same is true for cluster C8 and cluster C10. By integrating cluster C4 and cluster C6, the total number of clusters and the number of load lock chambers can be reduced.

[0109] <Clusters C1, C2, C3, C4+C6> Figure 10 is a top view illustrating clusters C1, C2, C3, and C4+C6. The connection configuration of clusters C1 to C3 is the same as the configuration shown in Figure 2. Cluster C3 is connected to cluster C4+C6 via load lock chamber B5. Cluster C4+C6 is connected to cluster C7 (see Figure 11) via load lock chamber B6.

[0110] Cluster C4+C6 includes a transfer chamber TF46 and a vacuum process device V. As the vacuum process device V (vacuum process devices V5 to V10), for example, a deposition device, a sputtering device, a CVD device, an ALD device, an etching device, an ashing device, or the like can be applied.

[0111] The load lock chambers B5 and B6 are provided with a vacuum pump VP and a valve for introducing an inert gas, so that the load lock chambers B5 and B6 can be controlled to a reduced pressure or an inert gas atmosphere.

[0112] Transfer chamber TF46 is connected to load lock chamber B5 via a gate valve, and to load lock chamber B6 via another gate valve. Transfer chamber TF46 is provided with a transfer device 71b. Transfer device 71b can transfer substrates from load lock chamber B5 to vacuum process device V. It can also unload substrates removed from vacuum process device V into load lock chamber B6.

[0113] <Clusters C7, C8+C10, C11, C12> Figure 11 is a top view illustrating clusters C7, C8+C10, C11, and C12. The connection configuration of clusters C11 and C12 is the same as the configuration shown in Figure 4. Cluster C7 is connected to cluster C8+C10 via load lock chamber B9. Cluster C8+C10 is connected to cluster C11 via load lock chamber B10.

[0114] Cluster C8+C10 has a transfer chamber TF810 and a vacuum process apparatus V. As the vacuum process apparatus V (vacuum process apparatuses V11 to V16), for example, a deposition apparatus, a sputtering apparatus, a CVD apparatus, an ALD apparatus, an etching apparatus, an ashing apparatus, etc. can be applied.

[0115] The load lock chambers B9 and B10 are provided with a vacuum pump VP and a valve for introducing an inert gas, so that the load lock chambers B9 and B10 can be controlled to a reduced pressure or an inert gas atmosphere.

[0116] The transfer chamber TF810 is connected to the load lock chamber B9 via a gate valve, and also to the load lock chamber B10 via another gate valve. A transfer device 71c is provided in the transfer chamber TF810. The transfer device 71c can transfer a substrate from the load lock chamber B9 to the vacuum process device V. The transfer device 71c can also transfer a substrate removed from the vacuum process device V to the load lock chamber B10.

[0117] <Clusters C13 and C14> The configuration of clusters C13 and C14 can be the same as the configuration shown in FIG.

[0118] <Substrate Transport Operation> Next, the operation of transporting a substrate from cluster C1 to cluster C2 will be described with reference to the drawings. Note that the substrate transport operation between another cluster having a similar configuration to cluster C1 and another cluster having a similar configuration to cluster C2 can also be similar to the following description.

[0119] 12A is a diagram showing the transfer device 70a of the cluster C1, the stage 80a of the load lock chamber B1, and the transfer device 71a of the cluster C2. For clarity, the chamber walls, gate valves, etc. are omitted from the illustration.

[0120] The transfer device 70a has an elevating mechanism 91, an arm 92, and a hand unit 93. The hand unit 93 has a flat surface with a notch, on which a substrate can be placed. Since the cluster C1 is a cluster that includes the atmospheric pressure process device A, the hand unit 93 may be provided with a vacuum suction mechanism or the like. Alternatively, an electrostatic suction mechanism may be provided.

[0121] The transfer device 71a has an elevating mechanism 94, an arm 95, and a substrate fixing part 96. The substrate fixing part 96 has a flat surface for holding the substrate 60, and is sized smaller than the width of the notch in the hand part 93 of the transfer device 70a. Because the cluster C1 is a cluster that includes the vacuum process device V, it is preferable to provide the substrate fixing part 96 with an electrostatic adsorption mechanism. The transfer device 71a also has a substrate inversion mechanism, which will be described later.

[0122] The stage 80a has pins 82 on which the substrate 60 is placed. A first length connecting the two pins 82 (the length not including the diameter of the pins 82) is set to be larger than the width of the substrate fixing portion 96. A second length connecting the two pins 82 (the length including the diameter of the pins 82) is set to be smaller than the width of the notch of the hand unit 93. Note that a configuration without pins is also possible as long as the substrate 60 is stably fixed and does not interfere with the substrate fixing portion 96 on the back side of the substrate 60. Note that a lifting mechanism may be provided on the stage 80a.

[0123] First, the substrate 60 held by the hand portion 93 of the transport device 70a is transported to the stage 80a (see FIG. 12B), and is lowered by the lifting mechanism 91 to place the substrate 60 on the pins 82 (see FIG. 12C).

[0124] Next, the substrate fixing portion 96 of the transport device 71a is inserted between the pins 82 of the stage 80a with the substrate fixing portion 96 facing upward, and the arm 95 is raised to fix the back surface of the substrate 60 to the substrate fixing portion 96 (see FIG. 13A).

[0125] Next, the arm 95 is further raised, and the substrate 60 is carried into the cluster C1 through the extension / contraction and rotation of the arm 95 (see FIG. 13B).

[0126] Then, the substrate 60 is inverted while being fixed to the substrate fixing part 96 by a rotation mechanism 97 provided between the substrate fixing part 96 and the arm 95 (see FIG. 13C ). The inverted substrate 60 can be carried into a film forming apparatus or the like in which a substrate is placed face down.

[0127] 14A is a diagram illustrating a vacuum process apparatus V in which a substrate is placed face-down, and illustrates a film forming apparatus 30. For clarity, the diagram is a see-through view of the chamber wall, and the gate valve is omitted.

[0128] The film forming apparatus 30 includes a film forming material supply unit 31, a mask jig 32, and a substrate alignment unit 33. If the film forming apparatus 30 is an evaporation apparatus, the film forming material supply unit 31 is a location where an evaporation source is installed. If the film forming apparatus 30 is a sputtering apparatus, the film forming material supply unit 31 is a location where a target (cathode) is installed.

[0129] 14B, the substrate 60 can be carried in an inverted state into the substrate alignment section 33. A mask jig 32 is installed below the substrate alignment section 33. Circuits and the like are provided in advance on the surface of the substrate 60, and the substrate 60 and the mask jig 32 are brought into close contact with each other to prevent film formation in unnecessary areas. At this time, the substrate alignment section 33 adjusts the positions of the portions of the substrate 60 where film formation is required and the openings 35 of the mask jig 32.

[0130] Since structures such as light-emitting elements are formed in the openings 35, the size of the openings 35 may be adjusted depending on the purpose. For example, the size of the openings 35 can be determined depending on the size of the exposure region described below.

[0131] 15A to 15C show an example of the number of display devices that can be produced per substrate (e.g., a silicon wafer) with a diameter φ of 12 inches. In FIGS. 15A to 15C, estimates are made assuming that external connection terminals are taken out from the backside using through-electrodes. This allows the display area to be widened. Pads may also be provided within the exposure area. In this case, although the display area becomes smaller, it has the effect of reducing the manufacturing cost related to the configuration for taking out the external connection terminals.

[0132] 15A to 15C each show an example in which the aspect ratio of the display area is 4:3.

[0133] FIG. 15A shows an example in which a sealing region is provided inside the exposure region (32 mm x 24 mm) of an exposure device. In the example of FIG. 15A, the width of the sealing region is 1.5 mm in the vertical direction and 2.0 mm in the horizontal direction. In this case, the size of the display region is 28 mm x 21 mm (aspect ratio 4:3), with a diagonal of approximately 1.38 inches. The number of display devices per substrate is 72. If the width of the sealing region is 2.0 mm in the vertical direction and 2.65 mm in the horizontal direction, the size of the display region is 26.7 mm x 20 mm (aspect ratio 4:3), with a diagonal of approximately 1.32 inches. If the width of the sealing region is 3.0 mm in the vertical direction and 4.0 mm in the horizontal direction, the size of the display region is 24 mm x 18 mm (aspect ratio 4:3), with a diagonal of approximately 1.18 inches. In both cases, the number of display devices that can be taken per substrate is 72.

[0134] Figures 15B and 15C show examples in which a sealing region is provided outside the exposure region (32 mm x 24 mm) of the exposure device. In this case, a gap is left for the sealing region during exposure. A marker region is provided inside the exposure region. Figure 15B shows an example in which the width of the marker region is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing region is 2.0 mm. In this case, the size of the display region of the display device is approximately 1.51 inches diagonally. The number of display devices per substrate is 56. Note that if the width of the marker region is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display region is approximately 1.45 inches diagonally. Figure 15C shows an example in which the width of the marker region is 0.5 mm in the vertical direction and 0.7 mm in the horizontal direction, and the width of the sealing region is 3.0 mm. In this case, the size of the display area of ​​the display device is approximately 1.51 inches diagonally, which is the same as the configuration in Fig. 15B. The number of display devices that can be obtained per substrate is 49, which is approximately 13% lower than the number of display devices that can be obtained with the configuration in Fig. 15B.

[0135] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0136] In this embodiment, a manufacturing apparatus different from that of the embodiment 1 will be described with reference to the drawings. The manufacturing apparatus described in this embodiment differs from the manufacturing apparatus described in the embodiment 1 in that some of the film formation devices are batch-type. Note that elements common to the embodiment 1 will be described using the same reference numerals.

[0137] 16 is a block diagram illustrating a light-emitting device manufacturing apparatus according to one embodiment of the present invention. The manufacturing apparatus has multiple clusters arranged in the order of processes. In this specification, a group of devices that share a transport device or the like is referred to as a cluster. A substrate on which a light-emitting device is to be formed moves through the clusters in order and undergoes each process.

[0138] 16 is an example of a manufacturing apparatus having clusters C1 to C14. Clusters C1 to C14 are connected in order, and a substrate 60a input into cluster C1 can be taken out from cluster C14 as a substrate 60b on which a light-emitting device is formed.

[0139] Here, clusters C1, C3, C5, C7, C9, C11, and C13 have equipment groups for performing processes under controlled atmosphere, and clusters C2, C4, C6, C10, C12, and C14 have equipment groups for performing vacuum processes (reduced pressure processes).

[0140] Clusters C1, C5, and C9 mainly include equipment for cleaning and baking substrates. Clusters C2, C6, and C10 mainly include equipment for forming organic compounds contained in light-emitting devices. Clusters C3, C7, and C11 mainly include equipment for performing lithography processes. Clusters C4, C8, and C12 mainly include equipment for performing etching and ashing processes. Cluster C13 mainly includes equipment for etching processes and cleaning substrates. Cluster C14 mainly includes equipment for forming organic compounds contained in light-emitting devices and equipment for forming protective films that seal light-emitting devices.

[0141] Next, details of clusters C1 to C14 will be described with reference to the top views of FIGS.

[0142] <Clusters C1 to C4> Clusters C1 to C4 will be described using Figures 17 and 18. Cluster C1 is connected to cluster C2 via load lock chamber B1. Cluster C2 is connected to cluster C3 via load lock chamber B2. Cluster C3 is connected to cluster C4 via load lock chamber B3. Cluster C4 is connected to cluster C5 via load lock chamber B4.

[0143] <Atmospheric Pressure Process Equipment A> Cluster C1 and cluster C3 each have atmospheric pressure process equipment A. Cluster C1 has a transfer chamber TF1 and atmospheric pressure process equipment A (atmospheric pressure process equipment A1, A2) that mainly performs processes under atmospheric pressure. Cluster C3 has a transfer chamber TF3 and atmospheric pressure process equipment A (atmospheric pressure process equipment A3 to A7). Cluster C1 also has a load chamber LD.

[0144] The number of atmospheric pressure process devices A in clusters C1 and C3 may be one or more depending on the purpose. The atmospheric pressure process devices A are not limited to processes under atmospheric pressure, and may be controlled to a pressure slightly negative or positive relative to atmospheric pressure. Furthermore, when multiple atmospheric pressure process devices A are provided, the atmospheric pressures may be different for each device.

[0145] The transfer chambers TF1 and TF3 and the atmospheric pressure process device A are connected to valves for introducing an inert gas (IG), allowing for control of the inert gas atmosphere. The inert gas may be nitrogen or a noble gas such as argon or helium. It is also preferable that the inert gas has a low dew point (for example, minus 50°C or less). By performing the process in an inert gas atmosphere with a low dew point, it is possible to prevent the incorporation of impurities and form highly reliable organic EL elements.

[0146] The atmospheric pressure process equipment A of the cluster C1 may be a cleaning equipment, a baking equipment, etc. For example, a spin cleaning equipment, a hot plate type baking equipment, etc. The baking equipment may be a vacuum baking equipment.

[0147] The atmospheric pressure process equipment A of cluster C3 can be an equipment for performing a lithography process. For example, when performing a photolithography process, a resin (photoresist) coating equipment, an exposure equipment, a developing equipment, a baking equipment, etc. can be applied. When performing a lithography process using nanoimprinting, a resin (UV curable resin, etc.) coating equipment, a nanoimprinting equipment, etc. can be applied. In addition, depending on the application, a cleaning equipment, a wet etching equipment, a coating equipment, a resist stripping equipment, etc. can also be applied to the atmospheric pressure process equipment A.

[0148] Cluster C1 shows an example in which atmospheric pressure process equipment A1 and A2 are each connected to transfer chamber TF1 via a gate valve. Cluster C3 shows an example in which atmospheric pressure process equipment A3 to A7 are each connected to transfer chamber TF3 via a gate valve. The provision of gate valves enables air pressure control, inert gas species control, and cross-contamination prevention.

[0149] The transfer chamber TF1 is connected to the load chamber LD via a gate valve. It is also connected to the load lock chamber B1 via another gate valve. A transfer device 70a is provided in the transfer chamber TF1. The transfer device 70a can transfer a substrate from the load chamber LD to the atmospheric pressure process equipment A. It can also transfer a substrate removed from the atmospheric pressure process equipment A to the load lock chamber B1.

[0150] Transfer chamber TF3 is connected to load lock chamber B2 via a gate valve, and also to load lock chamber B3 via another gate valve. Transfer chamber TF3 is provided with a transfer device 70b. Transfer device 70b can transfer substrates from load lock chamber B2 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B3.

[0151] <Vacuum Process Apparatus V> Cluster C2 and cluster C4 have vacuum process apparatus V. Cluster C2 has a transfer chamber TF2 and vacuum process apparatus V (vacuum process apparatus V1 to V4). Cluster C4 has a transfer chamber TF4 and vacuum process apparatus V (vacuum process apparatus V5 and V6).

[0152] The number of vacuum process devices V in clusters C2 and C4 may be one or more depending on the purpose. A vacuum pump VP is connected to each vacuum process device V, and a gate valve is provided between each vacuum process device V and the transfer chamber TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process device V.

[0153] The vacuum process refers to a process carried out in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only a process under high vacuum, but also a process in which a process gas is introduced and pressure is controlled under reduced pressure.

[0154] The transfer chambers TF2 and TF4 are also provided with independent vacuum pumps VP, which can prevent cross-contamination during the process carried out in the vacuum process device V.

[0155] The vacuum process equipment V of the cluster C2 may be, for example, a deposition equipment such as an evaporation equipment, a sputtering equipment, a CVD (Chemical Vapor Deposition) equipment, or an ALD (Atomic Layer Deposition) equipment. The CVD equipment may be, for example, a thermal CVD equipment using heat, or a PECVD (Plasma Enhanced CVD) equipment using plasma. The ALD equipment may be, for example, a thermal ALD equipment using heat, or a PEALD (Plasma Enhanced ALD) equipment using plasma-excited reactants.

[0156] The vacuum process equipment V included in the cluster C4 may be, for example, a dry etching equipment or an ashing equipment.

[0157] The transfer chamber TF2 is connected to the load lock chamber B1 via a gate valve and to the load lock chamber B2 via another gate valve. A transfer device 71a and a substrate transfer device 52a are provided in the transfer chamber TF2.

[0158] The substrate transfer device 52a has a stage 83a and transport devices 72a and 72b. A mask jig 61 can be placed on the stage 83a. Multiple substrates can be attached to the mask jig 61, and the transport device 71a can transport the substrates attached to the mask jig 61 to each vacuum process device V. In addition, the stage 83a can be moved in the X direction, Y direction, and θ direction.

[0159] The transport device 72a can invert a substrate placed in the load lock chamber B1 and mount it on the mask jig 61. The transport device 72b can invert a substrate removed from the mask jig 61 and transport it to the load lock chamber B2. These operations will be described in detail later.

[0160] It should be noted that multiple types of mask jigs can be used as the mask jig 61. The mask jigs can be stored in each vacuum process apparatus V and can be carried in and out by the transport apparatus 71a. Alternatively, a storage cabinet for the mask jigs 61 may be provided at the location where the vacuum process apparatus V is provided.

[0161] As described above, cluster C2 has a large-scale configuration because the vacuum process equipment V of cluster C2 is of a batch type in which substrates mounted on mask jigs 61 are carried in and processed. On the other hand, clusters C1, C3, and C4 are of a single-wafer type, and therefore are of a small-scale configuration.

[0162] The transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve, and also to the load lock chamber B4 via another gate valve. A transfer device 70c is provided in the transfer chamber TF4. The transfer device 70c can transfer the wafer from the load lock chamber B3 to the vacuum process device V and then back to the load lock chamber B4.

[0163] The load-lock chambers B1, B2, B3, and B4 are each equipped with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load-lock chambers B1, B2, B3, and B4 can be controlled to have a reduced pressure or an inert gas atmosphere. For example, when transferring a substrate from cluster C2 to cluster C3, the load-lock chamber B2 can be depressurized, the substrate can be transferred from cluster C2, and the inert gas atmosphere can be restored in the load-lock chamber B2 before the substrate is transferred to cluster C3.

[0164] The transport devices 70a, 70b, 70c and the transport device 71a each have a mechanism for transporting a substrate placed on a hand unit. The transport devices 70b and 70c operate under normal pressure, and therefore may be provided with a vacuum suction mechanism or the like in the hand unit. The transport devices 72a and 72b each have a mechanism for transporting a substrate fixed to the hand unit. The transport devices 72a and 72b operate under reduced pressure, and therefore, an electrostatic suction mechanism or the like can be used as a fixing method.

[0165] As described above, since the transport devices 70a, 70b, and 70c have different configurations from the transport devices 72a and 72b, the load lock chambers B1 and B2 are provided with stages 80a and 80b that can place substrates on pins. The load lock chambers B3 and B4 are provided with stages 81a and 81b that can place substrates on their surfaces. These are merely examples, and stages with other configurations may also be used. Details of the transfer of substrates in the load lock chamber B1 will be described later.

[0166] <Clusters C5 to C8> Clusters C5 to C8 will be described using Figures 18 and 19. Cluster C5 is connected to cluster C6 via load lock chamber B5. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C9 (see Figure 19) via load lock chamber B8.

[0167] The basic configurations of clusters C5 to C8 are the same as those of clusters C1 to C4, with cluster C5 corresponding to cluster C1, cluster C6 corresponding to cluster C2, cluster C7 corresponding to cluster C3, and cluster C8 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B4 in cluster C5.

[0168] Furthermore, load lock chamber B5 corresponds to load lock chamber B1, load lock chamber B6 corresponds to load lock chamber B2, load lock chamber B7 corresponds to load lock chamber B3, and load lock chamber B8 corresponds to load lock chamber B4.

[0169] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0170] Cluster C5 and cluster C7 each have atmospheric pressure process equipment A. Cluster C5 has a transfer chamber TF5 and atmospheric pressure process equipment A (atmospheric pressure process equipment A8, A9) that mainly performs processes under atmospheric pressure. Cluster C7 has a transfer chamber TF7 and atmospheric pressure process equipment A (atmospheric pressure process equipment A10 to A14).

[0171] Transfer chamber TF5 is connected to load lock chamber B4 via a gate valve. It is also connected to load lock chamber B5 via another gate valve. A transfer device 70d is provided in transfer chamber TF5. Transfer device 70d can transfer a substrate from load lock chamber B4 to atmospheric pressure process device A. It can also transfer a substrate removed from atmospheric pressure process device A to load lock chamber B5. Clusters C6 and C8 each have a vacuum process device V. Cluster C6 has transfer chamber TF6 and vacuum process device V (vacuum process devices V7 to V10). Cluster C8 has transfer chamber TF8 and vacuum process device V (vacuum process devices V11 and V12).

[0173] The transfer chamber TF6 is connected to the load lock chamber B5 via a gate valve and to the load lock chamber B6 via another gate valve. A transfer device 71b and a substrate transfer device 52b are provided in the transfer chamber TF6.

[0174] The substrate transfer device 52b has a stage 83b and transport devices 72c and 72d. A mask jig 61 can be placed on the stage 83b. The transport device 71b can transport the substrate attached to the mask jig 61 to each vacuum process device V. In addition, the stage 83b can be moved in the X direction, Y direction, and θ direction.

[0175] Transfer chamber TF7 is also connected to load lock chamber B6 via a gate valve. It is also connected to load lock chamber B7 via another gate valve. A transfer device 70e is provided in transfer chamber TF7. Transfer device 70d can transfer substrates from load lock chamber B6 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B7.

[0176] The transport device 72c can invert a substrate placed in the load lock chamber B5 and mount it on the mask jig 61. Furthermore, the transport device 72d can invert a substrate removed from the mask jig 61 and transport it to the load lock chamber B6.

[0177] Transfer chamber TF8 is connected to load lock chamber B7 via a gate valve, and also to load lock chamber B8 via another gate valve. Transfer chamber TF8 is provided with a transfer device 70f. Transfer device 70f can transfer substrates from load lock chamber B7 to vacuum process device V. It can also unload substrates removed from vacuum process device V into load lock chamber B8.

[0178] Load lock chambers B5 and B6 are provided with stages 80c and 80d on which a substrate can be placed on pins, while load lock chambers B7 and B8 are provided with stages 81c and 81d on which a substrate can be placed.

[0179] <Clusters C9 to C12> Clusters C9 to C12 will be described using Figures 19 and 20. Cluster C9 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 via load lock chamber B10. Cluster C11 is connected to cluster C12 via load lock chamber B11. Cluster C12 is connected to cluster C13 (see Figure 20) via load lock chamber B12.

[0180] The basic configurations of clusters C9 to C12 are similar to those of clusters C1 to C4, with cluster C9 corresponding to cluster C1, cluster C10 corresponding to cluster C2, cluster C11 corresponding to cluster C3, and cluster C12 corresponding to cluster C4. Note that the load chamber LD in cluster C1 is replaced with a load lock chamber B8 in cluster C9.

[0181] Furthermore, load lock chamber B9 corresponds to load lock chamber B1, load lock chamber B10 corresponds to load lock chamber B2, load lock chamber B11 corresponds to load lock chamber B3, and load lock chamber B12 corresponds to load lock chamber B4.

[0182] Only the configuration will be described below, and for details of the clusters and load lock chambers, please refer to the descriptions of clusters C1 to C4 and load lock chambers B1 to B4.

[0183] Cluster C9 and cluster C11 each have atmospheric pressure process equipment A. Cluster C9 has a transfer chamber TF9 and atmospheric pressure process equipment A (atmospheric pressure process equipment A15, A16) that mainly performs processes under atmospheric pressure. Cluster C11 has a transfer chamber TF11 and atmospheric pressure process equipment A (atmospheric pressure process equipment A17 to A21).

[0184] Transfer chamber TF9 is connected to load lock chamber B8 via a gate valve. It is also connected to load lock chamber B9 via another gate valve. A transfer device 70g is provided in transfer chamber TF9. The transfer device 70g can transfer substrates from load lock chamber B8 to atmospheric pressure process equipment A. It can also transfer substrates removed from atmospheric pressure process equipment A to load lock chamber B9.

[0185] The transfer chamber TF11 is also connected to the load lock chamber B10 via a gate valve. It is also connected to the load lock chamber B11 via another gate valve. A transfer device 70h is provided in the transfer chamber TF11. The transfer device 70h can transfer a substrate from the load lock chamber B10 to the atmospheric pressure process equipment A. The transfer device 70h can also transfer a substrate removed from the atmospheric pressure process equipment A to the load lock chamber B11.

[0186] Cluster C10 and cluster C12 each have a vacuum process device V. Cluster C10 has a transfer chamber TF10 and vacuum process devices V (vacuum process devices V13 to V16). Cluster C12 has a transfer chamber TF12 and vacuum process devices V (vacuum process devices V17 and V18).

[0187] The transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve and to the load lock chamber B10 via another gate valve. A transfer device 71c and a substrate transfer device 52c are provided in the transfer chamber TF10.

[0188] The substrate transfer device 52c has a stage 83c and transport devices 72e and 72f. A mask jig 61 can be placed on the stage 83c. The transport device 71c can transport the substrate attached to the mask jig 61 to each vacuum process device V. The stage 83c can be moved in the X, Y, and θ directions.

[0189] The transport device 72e can invert a substrate placed in the load lock chamber B9 and mount it on the mask jig 61. Furthermore, the transport device 72f can invert a substrate removed from the mask jig 61 and transport it to the load lock chamber B10.

[0190] The transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve, and also to the load lock chamber B12 via another gate valve. A transfer device 70i is provided in the transfer chamber TF12. The transfer device 70i can transfer a substrate from the load lock chamber B11 to the vacuum process device V and then unload it into the load lock chamber B12.

[0191] Load lock chambers B9 and B10 are provided with stages 80e and 80f on which a substrate can be placed on pins, while load lock chambers B11 and B12 are provided with stages 81e and 81f on which a substrate can be placed.

[0192] <Clusters C13, C14> Clusters C13 and C14 will be described with reference to Fig. 20. Cluster C13 is connected to cluster C14 via load lock chamber B13. Descriptions common to clusters C1, C2, etc. will be omitted.

[0193] Cluster C13 has atmospheric pressure process equipment A. Cluster C13 has transfer chamber TF13 and atmospheric pressure process equipment A (atmospheric pressure process equipment A22, A23) that mainly performs processes under atmospheric pressure.

[0194] The atmospheric pressure process equipment A of the cluster C13 may be an etching equipment, a baking equipment, or the like. For example, it may be a wet etching equipment, a hot plate type baking equipment, or the like. The baking equipment may be a vacuum baking equipment.

[0195] The transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. It is also connected to the load lock chamber B13 via another gate valve. A transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer a substrate from the load lock chamber B12 to the atmospheric pressure process equipment A. It can also transfer a substrate taken out of the atmospheric pressure process equipment A to the load lock chamber B13.

[0196] As the vacuum process equipment V of the cluster C14, for example, a deposition equipment such as a vapor deposition equipment, a sputtering equipment, a CVD equipment, an ALD equipment, and an opposing substrate bonding equipment can be applied.

[0197] The load lock chamber B13 is provided with a vacuum pump VP and a valve for introducing an inert gas, so that the load lock chamber B13 can be controlled to a reduced pressure or an inert gas atmosphere.

[0198] The transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve, and also to the unload chamber ULD via another gate valve. A transfer device 70k is provided in the transfer chamber TF14. The transfer device 70k can transfer a substrate from the load lock chamber B13 to the vacuum process device V. The transfer device 70k can also unload a substrate removed from the vacuum process device V into the unload chamber ULD.

[0199] By using the manufacturing apparatus configured as described above, a highly reliable light emitting device sealed with a protective film can be formed.

[0200] For example, successive steps can be performed in an atmosphere-controlled apparatus, from forming organic EL elements emitting light of a first color in clusters C1 to C4, forming organic EL elements emitting light of a second color in clusters C5 to C8, forming organic EL elements emitting light of a third color in clusters C9 to C12, removing unnecessary elements in cluster C13, and forming a protective film in cluster C14. Details of these steps will be described later.

[0201] <Configuration Example 2> Fig. 21 is a block diagram illustrating a light-emitting device manufacturing apparatus different from that shown in Fig. 16. The manufacturing apparatus shown in Fig. 21 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14, and has a configuration in which clusters C5 and C9 are omitted from the manufacturing apparatus shown in Fig. 16. Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and substrate 60a input into cluster C1 can be taken out from cluster C14 as substrate 60b on which a light-emitting device is formed.

[0202] In the manufacturing equipment shown in FIG. 16 , clusters C5 and C9 have a cleaning device and a baking device. The processes preceding the cleaning process are etching (dry etching) and ashing. If residual gas components, residues, deposits, etc. from these processes do not adversely affect subsequent processes, the cleaning process can be omitted. Furthermore, if the cleaning process is omitted, there is no need to consider residual moisture on the substrate, and therefore the baking process can also be omitted. Therefore, in some cases, the configuration of FIG. 21 may be adopted, in which clusters C5 and C9 are omitted from the manufacturing equipment shown in FIG. 16 . By omitting clusters C5 and C9, the total number of clusters and the number of load-lock chambers can be reduced.

[0203] <Clusters C1 to C4> The configurations of clusters C1 to C4 can be similar to those shown in Figures 17 and 18. Cluster C4 is connected to cluster C6 via load lock chamber B5. If there is a distance between transfer chamber TF4 and transfer chamber TF6 in load lock chamber B5, stage 80c may be configured to move freely along rails 87, as shown in Figure 22. Note that the configuration in which the stage moves freely along rails can also be applied to the other stages in configuration example 2, but a description thereof will be omitted.

[0204] <Clusters C6, C7, C8, C10> Clusters C6, C7, C8, and C10 will be described using Figures 22 and 23. Cluster C6 is connected to cluster C7 via load lock chamber B6. Cluster C7 is connected to cluster C8 via load lock chamber B7. Cluster C8 is connected to cluster C10 via load lock chamber B9. Cluster C10 is connected to cluster C11 (see Figure 20) via load lock chamber B10.

[0205] The following describes the configuration of connections between the clusters. For details of the clusters and the load lock chambers, please refer to the descriptions of the clusters C6, C7, C8, and C10 and the load lock chambers B5, B7, B9, and B10.

[0206] The transfer chamber TF6 of the cluster C6 is connected to the load lock chamber B5 via a gate valve and to the load lock chamber B6 via another gate valve. The transfer chamber TF6 is provided with a transport device 71b and a substrate transfer device 52b.

[0207] The substrate transfer device 52b has a stage 83b and transport devices 72c and 72d. A mask jig 61 can be placed on the stage 83b. The transport device 71b can transport the substrate attached to the mask jig 61 to each vacuum process device V. In addition, the stage 83b can be moved in the X direction, Y direction, and θ direction.

[0208] The transport device 72c can invert a substrate placed in the load lock chamber B5 and mount it on the mask jig 61. The transport device 72b can invert a substrate removed from the mask jig 61 and transport it to the load lock chamber B6.

[0209] The transfer chamber TF7 of the cluster C7 is connected to the load lock chamber B6 via a gate valve. It is also connected to the load lock chamber B7 via another gate valve. A transfer device 70e is provided in the transfer chamber TF7. The transfer device 70e can transfer a substrate from the load lock chamber B6 to the atmospheric pressure process equipment A. It can also transfer a substrate removed from the atmospheric pressure process equipment A to the load lock chamber B7.

[0210] The transfer chamber TF8 of the cluster C8 is connected to the load lock chamber B7 via a gate valve. It is also connected to the load lock chamber B9 via another gate valve. A transfer device 70f is provided in the transfer chamber TF8. The transfer device 70f can transfer a substrate from the load lock chamber B7 to the vacuum process device V. It can also unload the substrate taken out of the vacuum process device V into the load lock chamber B9.

[0211] The transfer chamber TF10 of the cluster C10 is connected to the load lock chamber B9 via a gate valve and to the load lock chamber B10 via another gate valve. The transfer chamber TF10 is provided with a transport device 71c and a substrate transfer device 52c.

[0212] The substrate transfer device 52c has a stage 83c and transport devices 72e and 72f. A mask jig 61 can be placed on the stage 83c. The transport device 71c can transport the substrate attached to the mask jig 61 to each vacuum process device V. The stage 83c can be moved in the X, Y, and θ directions.

[0213] The transport device 72e can invert a substrate placed in the load lock chamber B9 and mount it on the mask jig 61. Furthermore, the transport device 72f can invert a substrate removed from the mask jig 61 and transport it to the load lock chamber B10.

[0214] <Clusters C11, C12, C13, C14> The configuration of clusters C11 to C14 can be the same as the configuration shown in FIG.

[0215] <Substrate Transport Operation> For the operation of transporting a substrate from cluster C1 to cluster C2, the explanation of the first embodiment with reference to FIGS. 12 and 13 can be referred to.

[0216] 24A is a diagram illustrating the substrate transfer device 52a of cluster C2. The substrate transfer device 52a has a transport device 72a, a stage 83a, and a transport device 72b. For clarity, the chamber walls, gate valves, and the like are omitted from the illustration. The operations of the substrate transfer devices 52b and 52c, which have the same configuration as the substrate transfer device 52a, can be similar to those described below.

[0217] The transport device 72a has the same configuration as described above, and the transport device 72b has the same configuration.

[0218] The stage 83a is fixed on a plurality of moving mechanisms. The moving mechanisms can be, for example, a combination of an X-axis moving mechanism 84x, a Y-axis moving mechanism 84y, and a θ-axis moving mechanism 84θ, as shown in FIG. 24A . The Y-axis moving mechanism 84y is fixed to the X-axis moving mechanism 84x, the θ-axis moving mechanism 84θ is fixed to the Y-axis moving mechanism 84y, and the stage 83a is fixed to the θ-axis moving mechanism 84θ, so that the stage 83a can be moved within a certain range in the X-axis, Y-axis, and θ-axis directions.

[0219] By adjusting the range of movement of this stage 83a and the extension and contraction of the arms of the transport devices 72a and 72b, the substrate 60 can be attached to the upper countersunk portion 62 of the mask jig 61 placed on the stage 83a. In addition to the upper countersunk portion 62, the mask jig 61 also has an opening and a lower countersunk portion. These will be described in detail later.

[0220] The transport device 72a has a substrate rotation mechanism 98 that rotates the substrate fixing portion 96. Circuits and the like are pre-formed on the surface of the substrate 60, and the substrate 60 and the mask jig 61 are brought into close contact with each other to prevent deposition in unnecessary areas. Therefore, when the substrate 60 is attached to the mask jig 61, the substrate rotation mechanism 98 aligns the pattern pre-formed on the substrate 60 with the opening of the mask jig 61 in the θ direction (see FIG. 24B). The camera 86 used for this alignment can be provided on the stage 83a (see FIG. 26B).

[0221] The size of the mask jig 61 and the number of substrates 60 to be mounted can be determined depending on the purpose. If the arm length of the transport device 72a is not sufficient, the stage 83a can be rotated by the θ-axis movement mechanism 84θ to move the mounting position of the substrates 60 closer to the transport device 72a (see FIGS. 24C and 25A). Note that if the arm length of the transport device 72a is sufficiently long, the θ-axis movement mechanism 84θ does not need to be provided. Furthermore, the X-axis movement mechanism 84x and the Y-axis movement mechanism 84y can be omitted.

[0222] After the desired number of substrates 60 are placed on the mask jig 61 by the transfer device 72a, a film formation process is carried out in cluster C2. The mask jig 61 is then returned to the stage 83a. After the film formation process, the substrates 60 are removed from the mask jig 61 by the transfer device 72b (see FIG. 25B). Furthermore, since the next process is a lithography process in cluster C3, which has the transfer device 70b, the substrates are inverted by the transfer device 72b (see FIG. 25C).

[0223] In cluster C2, a transfer device 71a is used for transfer to a vacuum process device V where a film formation step is performed (see FIG. 26A).

[0224] The transport device 71a has an elevation mechanism, an arm, and a hand unit. The stage 83a is also provided with pusher pins 85. After the mask jig 61 is raised by the pusher pins 85, the hand unit of the transport device 71a is inserted between the stage 83a and the mask jig 61, and the mask jig 61 can be placed on the hand unit by lowering the pusher pins 85 or raising the hand unit (see FIG. 26B ).

[0225] In addition to the pusher pins 85, a camera 86 is also provided on the stage 83a. The camera 86 is provided at a position overlapping with the opening of the mask jig 61. Therefore, the alignment operation can be performed while checking the opening of the mask jig 61 and the pattern provided on the substrate 60 with the camera 86.

[0226] 27A shows a perspective cross-sectional view of the mask jig 61 taken along line A1-A2 (see FIG. 26B) when the mask jig 61 is placed on the hand portion of the transport device 71a. Also, FIG. 27B shows a cross-sectional view of only the mask jig 61.

[0227] The mask jig 61 has an upper countersunk portion 62 for mounting the substrate 60, a lower countersunk portion 64, and an opening 63. By providing the lower countersunk portion 64, the hand portion of the transport device 71a comes into contact with the outside of the lower countersunk portion 64, and does not come into contact with the vicinity of the opening 63. Therefore, a constant distance can be maintained between the hand portion and the surface of the substrate 60 (the surface on which a film is formed), thereby suppressing contamination of the substrate 60 and adhesion of dust caused by the hand portion.

[0228] Up to this point, an example has been used in which the mask jig 61 can mount four substrates 60 at equal intervals, but as shown in Fig. 27C, it may be configured so that the substrates 60 can be mounted in a staggered arrangement. Alternatively, as shown in Fig. 27D, it may be configured so that even more substrates 60 can be mounted. By using a staggered arrangement, the size of the mask jig 61 can be reduced, which in turn allows the size of the film formation device and the like to be reduced, thereby reducing the overall area of ​​the manufacturing device.

[0229] 28A is a diagram for explaining a vacuum process apparatus V in which a mask jig 61 is installed, and here, a film forming apparatus 40 is shown as an example. For clarity of the drawing, the view is a see-through view of the chamber wall, and the gate valve is omitted.

[0230] The film forming apparatus 40 has a film forming material supply unit 42 and rails 41 for placing a mask jig 61. If the film forming apparatus 40 is an evaporation apparatus, the film forming material supply unit 42 is a portion where an evaporation source is placed. If the film forming apparatus 40 is a sputtering apparatus, the film forming material supply unit 42 is a portion where a target (cathode) is placed.

[0231] The rail 41 is fixed inside the chamber, and the mask jig 61 can be stably installed by placing the notched portion of the mask jig 61 on the rail 41. The rail 41 is also provided at a position where the film forming material supply unit 42 and the mask jig 61 face each other.

[0232] A cooling plate 43 shown in FIG. 28B may be placed on the mask jig 61. The cooling plate 43 is provided with an inlet 44 and an outlet 45 for gas to cool the substrate 60. FIG. 28C is a cutaway view of the cooling plate 43. The substrate 60 comes into contact with a sealant 46 (e.g., an O-ring) provided on the cooling plate 43. Therefore, a closed space is formed between the substrate 60 and the cooling plate, with the sealant 46 as a side wall.

[0233] A cooling gas (such as an inert gas) is introduced into the closed space through the inlet 44, and the cooling gas that has transferred heat from the substrate 60 can be discharged through the outlet 45. Note that a conductance valve is provided in one or both of the inlet 44 and the outlet 45, and the cooling gas is introduced and discharged while maintaining a constant pressure in the closed space, thereby enabling the substrate 60 to be cooled uniformly.

[0234] 28B shows an example in which one valve is provided for each of the inlet 44 and outlet 45 of two systems, but one valve may be provided for each of the inlet 44 and outlet 45 of one system. The number of inlets 44 and outlets 45 is not limited and may be determined taking into consideration the cooling capacity and uniformity of cooling.

[0235] Since organic compounds, which are constituent materials of organic EL elements and the like, deteriorate at high temperatures, it is preferable that processes after forming the organic compounds be carried out at 80°C or less, and preferably 70°C or less. In a sputtering device, the substrate 60 is exposed to plasma, and therefore the substrate 60 may be heated to 100°C or more. For this reason, it is preferable to cool the substrate 60 using the cooling plate 43 described above. Note that although the term "cooling" is used above, it may also be expressed as "adjusting the temperature of the substrate to a certain temperature or below."

[0236] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0237] Embodiment 3 In this embodiment, a specific example of a light-emitting element (organic EL element) manufactured using an apparatus for manufacturing a light-emitting device according to one embodiment of the present invention will be described.

[0238] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0239] In this specification and the like, a structure in which different light-emitting layers are formed or different light-emitting layers are painted for each color light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. In this specification and the like, a light-emitting device that can emit white light may be referred to as a white light-emitting device. In addition, a white light-emitting device can be made into a light-emitting device that displays full color by combining it with a colored layer (for example, a color filter).

[0240] Furthermore, light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, two or more light-emitting layers may be selected so that the emission colors of the two or more light-emitting layers are complementary to each other. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0241] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, light from the light-emitting layers of the light-emitting units may be combined to obtain white light emission. The configuration for obtaining white light emission is the same as that of the single-structure device. In a tandem-structure device, it is preferable to provide an intermediate layer such as a charge-generating layer between the light-emitting units.

[0242] Furthermore, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. If it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0243] Note that a tandem-structure device may have a configuration (BB, GG, RR, etc.) in which light is emitted from multiple layers. A tandem structure, which allows light emission from multiple layers, requires a high voltage for light emission, but the current required to achieve the same emission intensity as a single structure is smaller. Therefore, a tandem structure can reduce the current stress per light-emitting unit and extend the device life.

[0244] 29 shows a schematic top view of a display device 100 manufactured using a manufacturing apparatus for a light-emitting device of one embodiment of the present invention. The display device 100 includes a plurality of light-emitting elements 110R that exhibit red light, a plurality of light-emitting elements 110G that exhibit green light, and a plurality of light-emitting elements 110B that exhibit blue light. In FIG. 29, the light-emitting elements are labeled with R, G, and B within their light-emitting regions to easily distinguish them from one another.

[0245] The light emitting elements 110R, 110G, and 110B are arranged in a matrix. Fig. 29 shows a so-called stripe arrangement in which light emitting elements of the same color are arranged in one direction. Note that the arrangement of the light emitting elements is not limited to this, and arrangements such as a delta arrangement or a zigzag arrangement may also be used, or a pentile arrangement may also be used.

[0246] As the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it is preferable to use an EL element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of light-emitting materials that the EL elements have include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials).

[0247] 30A is a schematic cross-sectional view corresponding to the dashed dotted line A1-A2 in FIG. 29. FIG.

[0248] 30A shows cross sections of the light emitting elements 110R, 110G, and 110B. The light emitting elements 110R, 110G, and 110B are each provided on a pixel circuit, and have a pixel electrode 111 and a common electrode 113.

[0249] The light-emitting element 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113. The EL layer 112R contains a light-emitting organic compound that emits light having a peak in at least the red wavelength range. The EL layer 112G of the light-emitting element 110G contains a light-emitting organic compound that emits light having a peak in at least the green wavelength range. The EL layer 112B of the light-emitting element 110B contains a light-emitting organic compound that emits light having a peak in at least the blue wavelength range. Note that a structure in which the EL layer 112R, the EL layer 112G, and the EL layer 112B each emit light of a different color may be referred to as an SBS (Side By Side) structure.

[0250] The EL layer 112R, the EL layer 112G, and the EL layer 112B may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer in addition to a layer containing a light-emitting organic compound (light-emitting layer).

[0251] The pixel electrode 111 is provided for each light-emitting element. The common electrode 113 is provided as a continuous layer common to each light-emitting element. A conductive film that is transparent to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film that is reflective to visible light is used for the other. By making the pixel electrode 111 transparent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making the pixel electrode 111 reflective and the common electrode 113 transparent, a top-emission display device can be obtained. Note that by making both the pixel electrode 111 and the common electrode 113 transparent, a dual-emission display device can also be obtained. In this embodiment, an example of fabricating a top-emission display device will be described.

[0252] An insulating layer 131 is provided to cover the edge of the pixel electrode 111. The edge of the insulating layer 131 is preferably tapered.

[0253] The EL layer 112R, the EL layer 112G, and the EL layer 112B each have a region in contact with the upper surface of the pixel electrode 111 and a region in contact with the surface of the insulating layer 131. In addition, the ends of the EL layer 112R, the EL layer 112G, and the EL layer 112B are located on the insulating layer 131.

[0254] As shown in Figure 30A, a gap is provided between two EL layers between light-emitting elements of different colors. In this manner, it is preferable that the EL layers 112R, 112G, and 112B are arranged so that they do not contact each other. This effectively prevents current from flowing through two adjacent EL layers, which would otherwise cause unintended light emission. This allows for increased contrast and a display device with high display quality to be realized.

[0255] A protective layer 121 is provided on the common electrode 113 to cover the light-emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities from diffusing from above into each light-emitting element. Alternatively, the protective layer 121 has a function of capturing (also called gettering) impurities (typically, impurities such as water and hydrogen) that may enter each light-emitting element.

[0256] The protective layer 121 may have, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0257] The pixel electrode 111 is electrically connected to one of the source and drain of the transistor 116. The transistor 116 can be, for example, a transistor having a metal oxide in a channel formation region (hereinafter referred to as an OS transistor). The OS transistor has higher mobility and excellent electrical characteristics than an amorphous silicon transistor. Furthermore, the OS transistor does not require the crystallization process that is required in the manufacturing process of polycrystalline silicon, and can be formed through a wiring process or the like. Therefore, the OS transistor can be formed on the transistor 115 having silicon in a channel formation region (hereinafter referred to as a Si transistor) formed on the substrate 60 without using a bonding process or the like.

[0258] Here, the transistor 116 is a transistor that forms a pixel circuit. The transistor 115 is a transistor that forms a driver circuit of the pixel circuit. That is, since the pixel circuit can be formed on the driver circuit, a display device with a narrow frame can be formed.

[0259] As a semiconductor material for an OS transistor, a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used.

[0260] Because of the large energy gap of the semiconductor layer, OS transistors exhibit extremely low off-state current of several yA / μm (current value per μm of channel width). Furthermore, OS transistors have characteristics different from Si transistors, such as the absence of impact ionization, avalanche breakdown, and short-channel effects, and can form highly reliable circuits with high breakdown voltage. Furthermore, OS transistors are less susceptible to variations in electrical characteristics due to non-uniformity in crystallinity, which is a problem in Si transistors.

[0261] A semiconductor layer included in an OS transistor can be, for example, a film represented by an In-M-Zn-based oxide containing indium, zinc, and M (one or more metals such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). The In-M-Zn-based oxide can be typically formed by a sputtering method. Alternatively, it may be formed by an atomic layer deposition (ALD) method.

[0262] The atomic ratio of the metal elements in a sputtering target used to form an In-M-Zn-based oxide by a sputtering method preferably satisfies In≧M and Zn≧M. Preferred atomic ratios of the metal elements in such a sputtering target are In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, etc. The atomic ratios of the semiconductor layer to be formed each include a variation of plus or minus 40% of the atomic ratio of the metal elements contained in the sputtering target.

[0263] The semiconductor layer is made of an oxide semiconductor having a low carrier density. １７ / cm ３ Below 1 × 10, preferably １５ / cm ３ More preferably, 1×10 １３ / cm ３or less, more preferably 1 × 10 １１ / cm ３ More preferably, 1×10 １０ / cm ３ is less than 1×10 −９ / cm ３ An oxide semiconductor having a carrier density above or equal to this can be used. Such an oxide semiconductor is called a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. The oxide semiconductor has a low density of defect states and stable characteristics.

[0264] Note that the present invention is not limited to these, and an oxide semiconductor having an appropriate composition may be used depending on the semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, etc.) of the transistor. In order to obtain the required semiconductor characteristics of the transistor, it is preferable to appropriately set the carrier density, impurity concentration, defect density, atomic ratio of metal element to oxygen, interatomic distance, density, and the like of the semiconductor layer.

[0265] 30A illustrates a configuration in which the light-emitting layers of the R, G, and B light-emitting elements are different from one another, but the present invention is not limited to this. For example, as shown in FIG. 30B , a color system may be used in which an EL layer 112W that emits white light is provided, and colored layers 114R (red), 114G (green), and 114B (blue) are provided so as to overlap the EL layer 112W to form light-emitting elements 110R, 110G, and 110B.

[0266] The EL layer 112W may have a tandem structure in which EL layers that emit R, G, and B light are connected in series, for example. Alternatively, a structure in which light-emitting layers that emit R, G, and B light may be connected in series may be used. The colored layers 114R, 114G, and 114B may be, for example, red, green, and blue color filters.

[0267] Alternatively, as shown in FIG. 30C, a pixel circuit may be formed using a transistor 117 included in a substrate 60, and one of the source or drain of the transistor 117 may be electrically connected to the pixel electrode 111.

[0268] <Manufacturing Method Example> An example of a manufacturing method for a light-emitting device that can be manufactured using a manufacturing apparatus according to one embodiment of the present invention will be described below. Here, the light-emitting device included in the display device 100 shown in the above configuration example will be described as an example.

[0269] 31A to 33E are schematic cross-sectional views illustrating steps in a method for fabricating a light-emitting device, which will be described below. Note that the transistor 116, which is a component of the pixel circuit shown in FIG. 30A, and the transistor 115, which is a component of the driver circuit, are omitted in FIG.

[0270] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a display device can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, an atomic layer deposition (ALD) method, or the like. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method. A manufacturing apparatus according to one embodiment of the present invention can include an apparatus for forming a thin film by the above method.

[0271] Furthermore, methods such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating can be used to form thin films (insulating films, semiconductor films, conductive films, etc.) that constitute display devices and to apply resins and the like used in lithography processes. A manufacturing apparatus according to one embodiment of the present invention can include a device for forming thin films by the above-described methods. Furthermore, a manufacturing apparatus according to one embodiment of the present invention can include a device for applying resins by the above-described methods.

[0272] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed using a nanoimprint method. Furthermore, a method of directly forming island-shaped thin films by a film formation method using a masking mask may be used in combination.

[0273] There are two typical methods for processing thin films using photolithography. One is a method in which a resist mask is formed on the thin film to be processed, the thin film is processed by etching or the like, and the resist mask is then removed. The other is a method in which a photosensitive thin film is formed, and then the thin film is exposed to light and developed to be processed into the desired shape.

[0274] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, ArF laser light, etc. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0275] The thin film can be etched by dry etching, wet etching, etc. The manufacturing apparatus according to one embodiment of the present invention can include an apparatus for processing the thin film by the above-described method.

[0276] <Preparation of Substrate 60> A substrate having heat resistance sufficient to withstand at least the subsequent heat treatment can be used as the substrate 60. When an insulating substrate is used as the substrate 60, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0277] In particular, it is preferable to use a substrate in which a semiconductor circuit including semiconductor elements such as transistors is formed on the semiconductor substrate or insulating substrate as the substrate 60. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0278] <Formation of pixel circuits and pixel electrodes 111> Next, a plurality of pixel circuits are formed on the substrate 60, and a pixel electrode 111 is formed in each pixel circuit. First, a conductive film that will become the pixel electrode 111 is formed, a resist mask is formed by photolithography, and unnecessary portions of the conductive film are removed by etching. After that, the resist mask is removed, thereby forming the pixel electrode 111.

[0279] It is preferable to use a material (such as silver or aluminum) that has as high a reflectance as possible over the entire wavelength range of visible light as the pixel electrode 111. The pixel electrode 111 formed from such a material can be said to be an electrode having light reflectivity. This not only increases the light extraction efficiency of the light-emitting element, but also improves color reproducibility.

[0280] <Formation of Insulating Layer 131> Next, the insulating layer 131 is formed to cover the edges of the pixel electrode 111 (see FIG. 31A ). An organic insulating film or an inorganic insulating film can be used as the insulating layer 131. The insulating layer 131 preferably has tapered edges to improve the step coverage of the EL film that will be formed later. In particular, when an organic insulating film is used, it is preferable to use a photosensitive material, as this makes it easier to control the shape of the edges by adjusting the exposure and development conditions.

[0281] <Formation of EL Film 112Rf> Subsequently, an EL film 112Rf, which will later become the EL layer 112R, is formed on the pixel electrode 111 and the insulating layer 131.

[0282] The EL film 112Rf includes a film containing at least a red-light-emitting organic compound. Alternatively, the EL film 112Rf may have a laminated structure including an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer. The EL film 112Rf can be formed by, for example, a vapor deposition method or a sputtering method. However, the method is not limited to these, and the above-described film formation methods can be used as appropriate.

[0283] <Formation of Protective Film 125Rf> Subsequently, a protective film 125Rf, which will later become the protective layer 125R, is formed on the EL film 112Rf (see FIG. 31B).

[0284] The protective layer 125R is a temporary protective layer used to prevent deterioration and loss of the EL layer 112R during the manufacturing process of the organic EL element, and is also called a sacrificial layer. The protective film 125Rf is preferably formed using a film formation method that provides high barrier properties against moisture and other factors and is less likely to damage organic compounds during film formation. It is also preferably formed from a material that allows the use of an etchant that is less likely to damage organic compounds during the etching process. For example, inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, and inorganic insulating films can be used.

[0285] <Formation of Resist Mask 143a> Subsequently, a resist mask 143a is formed on the pixel electrode 111 corresponding to the light-emitting element 110R (see FIG. 31C). The resist mask 143a can be formed by a lithography process.

[0286] <Formation of EL Layer 112R and Protective Layer 125R> Next, the protective film 125Rf and the EL film 112Rf are etched using the resist mask 143a to form the protective layer 125R and the EL layer 112R in an island shape (see FIG. 31D). Dry etching or wet etching can be used for the etching process. The resist mask 143a is then removed by ashing or using a resist remover.

[0287] <Formation of EL Film 112Gf> Subsequently, an EL film 112Gf, which will later become the EL layer 112G, is formed on the exposed pixel electrodes 111 and insulating layer 131, and on the protective layer 125R.

[0288] The EL film 112Gf includes a film containing at least a green light-emitting organic compound. Alternatively, the EL film 112Gf may have a laminated structure including an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.

[0289] <Formation of Protective Film 125Gf> Next, a protective film 125Gf, which will later become the protective layer 125G, is formed on the EL film 112Gf (see FIG. 32A). The protective film 125Gf can be formed from the same material as the protective film 125Rf.

[0290] <Formation of Resist Mask 143b> Next, a resist mask 143b is formed on the pixel electrode 111 corresponding to the light-emitting element 110G (see FIG. 32B). The resist mask 143b can be formed by a lithography process.

[0291] <Formation of EL Layer 112G and Protective Layer 125G> Next, the protective film 125Gf and the EL film 112Gf are etched using the resist mask 143b to form the protective layer 125G and the EL layer 112G in an island shape (see FIG. 32C). Dry etching or wet etching can be used for the etching process. The resist mask 143b is then removed by ashing or using a resist remover.

[0292] <Formation of EL Film 112Bf> Subsequently, the EL film 112Bf, which will later become the EL layer 112B, is formed on the exposed pixel electrodes 111 and insulating layer 131, and on the protective layers 125R and 125G.

[0293] The EL film 112Bf includes a film containing at least a blue light-emitting organic compound. Alternatively, the EL film 112Bf may have a stacked structure of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.

[0294] <Formation of Protective Film 125Bf> Next, a protective film 125Bf, which will later become the protective layer 125B, is formed on the EL film 112Bf (see FIG. 32D). The protective film 125Bf can be made of the same material as the protective film 125Rf.

[0295] <Formation of Resist Mask 143c> Subsequently, a resist mask 143c is formed on the pixel electrode 111 corresponding to the light-emitting element 110B (see FIG. 33A). The resist mask 143b can be formed by a lithography process.

[0296] <Formation of EL Layer 112B and Protective Layer 125B> Next, the protective film 125Bf and the EL film 112Bf are etched using the resist mask 143c to form the protective layer 125B and the EL layer 112G in an island shape (see FIG. 33B). Dry etching or wet etching can be used for the etching process. The resist mask 143b is then removed by ashing or using a resist remover (see FIG. 33C).

[0297] <Removal of Protective Layers 125R, 125G, and 125B> Next, the protective layers 125R, 125G, and 125B are removed (see FIG. 33D). The protective layers are preferably removed by wet etching using an etchant suitable for the material of the protective layers.

[0298] <Formation of Common Electrode> Next, a conductive layer that will become the common electrode 113 of the organic EL element is formed on the EL layers 112R, 112G, and 112B exposed in the previous step, and on the insulating layer 131. The common electrode 113 can be a single film or a laminated film of either a thin metal film (e.g., an alloy of silver and magnesium) that transmits light emitted from the light-emitting layer or a light-transmitting conductive film (e.g., indium tin oxide or an oxide containing one or more of indium, gallium, zinc, etc.). The common electrode 113 made of such a film can be referred to as an electrode having light transparency. A vapor deposition apparatus and / or a sputtering apparatus can be used in the process of forming the conductive layer that will become the common electrode 113.

[0299] In order to improve reliability, a layer having any of the functions of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer may be provided as a common layer on the EL layers 112R, 112G, and 112B before the formation of the common electrode 113.

[0300] By providing a light-reflective electrode as the pixel electrode 111 and a light-transmitting electrode as the common electrode 113, light emitted from the light-emitting layer can be emitted to the outside through the common electrode 113. In other words, a top-emission light-emitting element is formed.

[0301] <Protective Layer Formation> Subsequently, a protective layer 121 is formed on the common electrode 113 (see FIG. 33E). In the step of forming the protective layer, a sputtering device, a CVD device, an ALD device, or the like can be used.

[0302] 34 shows an example of a manufacturing apparatus that can be used for the above-described manufacturing steps from the formation of the EL film 112Rf to the formation of the protective layer 121. The basic configuration of the manufacturing apparatus shown in FIG. 34 is the same as that of the manufacturing apparatus shown in FIG.

[0303] Clusters C1 to C14 will be described in detail below. Fig. 34 is a perspective view showing the entire manufacturing apparatus, omitting the illustration of utilities, gate valves, etc. For clarity, the interiors of transfer chambers TF1 to TF14 and load lock chambers B1 to B13 are shown as visualized.

[0304] <Cluster C1> Cluster C1 has a load chamber LD and atmospheric pressure process devices A1 and A2. The atmospheric pressure process device A1 can be a cleaning device, and the atmospheric pressure process device A2 can be a baking device. In cluster C1, a cleaning step is performed before the EL film 112Rf is formed.

[0305] <Cluster C2> Cluster C2 includes vacuum process equipment V1 to V4. The vacuum process equipment V1 to V4 are vapor deposition equipment for forming the EL film 112Rf and film formation equipment (e.g., vapor deposition equipment, ALD equipment, etc.) for forming the protective film 125Rf. For example, the vacuum process equipment V1 can be used as an equipment for forming an organic compound layer that will become the light-emitting layer (R). Furthermore, the vacuum process equipment V2 and V3 can be assigned as equipment for forming organic compound layers such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. Furthermore, the vacuum process equipment V4 can be assigned as an equipment for forming the protective film 125Rf.

[0306] <Cluster C3> Cluster C3 has atmospheric pressure process equipment A3 to A7. The atmospheric pressure process equipment A3 to A7 can be equipment used in a lithography process. For example, the atmospheric pressure process equipment A3 can be a resin (photoresist) application equipment, the atmospheric pressure process equipment A4 can be a pre-bake equipment, the atmospheric pressure process equipment A5 can be an exposure equipment, the atmospheric pressure process equipment A6 can be a development equipment, and the atmospheric pressure process equipment A7 can be a post-bake equipment. Alternatively, the atmospheric pressure process equipment A5 can be a nanoimprint equipment.

[0307] <Cluster C4> Cluster C4 has vacuum process equipment V5 and V6. The vacuum process equipment V5 can be a dry etching equipment that forms the EL layer 112R. The vacuum process equipment V6 can be an ashing equipment that removes the resist mask.

[0308] <Cluster C5> Cluster C5 has atmospheric pressure process equipment A8 and A9. The atmospheric pressure process equipment A8 can be a cleaning equipment, and the atmospheric pressure process equipment A9 can be a baking equipment. In cluster C5, a cleaning step is performed before the EL film 112Gf is formed.

[0309] <Cluster C6> Cluster C6 includes vacuum process equipment V7 to V10. The vacuum process equipment V7 to V10 are evaporation equipment for forming the EL film 112Gf and film formation equipment (e.g., sputtering equipment) for forming the protective film 125Gf. For example, the vacuum process equipment V7 can be used as an equipment for forming an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process equipment V8 and V9 can be assigned to equipment for forming organic compound layers such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. Furthermore, the vacuum process equipment V10 can be assigned to an equipment for forming the protective film 125Gf.

[0310] <Cluster C7> Cluster C7 has atmospheric pressure process equipment A10 to A14. The atmospheric pressure process equipment A10 to A14 may be equipment used for lithography processes. The equipment allocation may be the same as for cluster C3.

[0311] <Cluster C8> Cluster C8 has vacuum process equipment V11 and V12. The vacuum process equipment V11 can be a dry etching equipment that forms the EL layer 112G. The vacuum process equipment V12 can be an ashing equipment that removes the resist mask.

[0312] <Cluster C9> Cluster C9 has atmospheric pressure process equipment A15 and A16. The atmospheric pressure process equipment A15 can be a cleaning equipment, and the atmospheric pressure process equipment A16 can be a baking equipment. In cluster C9, a cleaning step is performed before the EL film 112Bf is formed.

[0313] <Cluster C10> Cluster C10 includes vacuum process equipment V13 to V16. The vacuum process equipment V13 to V16 are evaporation equipment for forming the EL film 112Bf and film formation equipment (e.g., sputtering equipment) for forming the protective film 125Bf. For example, the vacuum process equipment V13 can be used as an equipment for forming an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process equipment V14 and V15 can be assigned as equipment for forming organic compound layers such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. Furthermore, the vacuum process equipment V16 can be assigned as an equipment for forming the protective film 125Bf.

[0314] <Cluster C11> The cluster C11 includes atmospheric pressure process equipment A17 to A21. The atmospheric pressure process equipment A17 to A21 may be equipment used in a lithography process. The equipment may be allocated in the same manner as in the cluster C3.

[0315] <Cluster C12> Cluster C12 has vacuum process equipment V17 and V18. The vacuum process equipment V17 can be a dry etching equipment that forms the EL layer 112B. The vacuum process equipment V18 can be an ashing equipment that removes the resist mask.

[0316] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 and A23. The atmospheric pressure process equipment A22 can be a wet etching equipment, and the atmospheric pressure process equipment A23 can be a baking equipment. In cluster C9, the etching process of the protective layers 125R, 125G, and 125B is performed.

[0317] <Cluster C14> Cluster C14 includes vacuum process apparatuses V19 to V21 and an unloading chamber ULD. The vacuum process apparatus V19 can be assigned to an apparatus (e.g., a vapor deposition apparatus) for forming any of the organic compound layers: electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. The vacuum process apparatus V20 can be a film formation apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. The vacuum process apparatus V21 can be a film formation apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, a separate vacuum process apparatus V can be provided, and multiple different film formation apparatuses (e.g., vapor deposition apparatuses, ALD apparatuses, etc.) can be provided to form the common electrode 113 and the protective layer 121 as stacked films.

[0318] 34, the processing equipment, and the elements corresponding to the above-described manufacturing method are summarized in Table 1. Note that the description of the load lock chamber and the loading and unloading of substrates into and from each device is omitted.

[0319]

[0320] The manufacturing apparatus according to one embodiment of the present invention has a function of automatically carrying out steps No. 1 to No. 47 shown in Table 1.

[0321] <Manufacturing Apparatus Example 2> An example of a manufacturing apparatus different from Manufacturing Apparatus Example 1 is shown in Fig. 35. The basic configuration of the manufacturing apparatus shown in Fig. 35 is the same as the configuration of the manufacturing apparatus shown in Fig. 34.

[0322] Clusters C1 to C14 will be specifically described below. Fig. 35 is a perspective view showing the entire manufacturing apparatus, omitting the illustration of utilities, gate valves, etc. For clarity, the interiors of transfer chambers TF1 to TF14 and load lock chambers B1 to B13 are shown as visualized.

[0323] <Cluster C1> Cluster C1 has a load chamber LD and atmospheric pressure process devices A1 and A2. The atmospheric pressure process device A1 can be a cleaning device, and the atmospheric pressure process device A2 can be a baking device. In cluster C1, a cleaning step is performed before the EL film 112Rf is formed.

[0324] <Cluster C2> Cluster C2 includes a substrate transfer device 52a and vacuum process devices V1 to V4. The vacuum process devices V1 to V4 are vapor deposition devices for forming the EL film 112Rf and film formation devices (e.g., vapor deposition devices, ALD devices, etc.) for forming the protective film 125Rf. For example, the vacuum process device V1 can be used as a device for forming an organic compound layer that will become the light-emitting layer (R). The vacuum process devices V2 and V3 can be assigned to devices for forming organic compound layers such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. The vacuum process device V4 can be assigned to a device for forming the protective film 125Rf.

[0325] <Cluster C3> Cluster C3 has atmospheric pressure process equipment A3 to A7. The atmospheric pressure process equipment A3 to A7 can be equipment used in a lithography process. For example, the atmospheric pressure process equipment A3 can be a resin (photoresist) application equipment, the atmospheric pressure process equipment A4 can be a pre-bake equipment, the atmospheric pressure process equipment A5 can be an exposure equipment, the atmospheric pressure process equipment A6 can be a development equipment, and the atmospheric pressure process equipment A7 can be a post-bake equipment. Alternatively, the atmospheric pressure process equipment A5 can be a nanoimprint equipment.

[0326] <Cluster C4> Cluster C4 has vacuum process equipment V5 and V6. The vacuum process equipment V5 can be a dry etching equipment that forms the EL layer 112R. The vacuum process equipment V6 can be an ashing equipment that removes the resist mask.

[0327] <Cluster C5> Cluster C5 has atmospheric pressure process equipment A8 and A9. The atmospheric pressure process equipment A8 can be a cleaning equipment, and the atmospheric pressure process equipment A9 can be a baking equipment. In cluster C5, a cleaning step is performed before the EL film 112Gf is formed.

[0328] <Cluster C6> Cluster C6 includes a substrate transfer device 52b and vacuum process devices V7 to V10. The vacuum process devices V7 to V10 are evaporation devices for forming the EL film 112Gf and film formation devices (e.g., sputtering devices) for forming the protective film 125Gf. For example, the vacuum process device V7 can be used as a device for forming an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process devices V8 and V9 can be assigned to devices for forming organic compound layers such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. Furthermore, the vacuum process device V10 can be assigned to a device for forming the protective film 125Gf.

[0329] <Cluster C7> Cluster C7 has atmospheric pressure process equipment A10 to A14. The atmospheric pressure process equipment A10 to A14 may be equipment used for lithography processes. The equipment allocation may be the same as for cluster C3.

[0330] <Cluster C8> Cluster C8 has vacuum process equipment V11 and V12. The vacuum process equipment V11 can be a dry etching equipment that forms the EL layer 112G. The vacuum process equipment V12 can be an ashing equipment that removes the resist mask.

[0331] <Cluster C9> Cluster C9 has atmospheric pressure process equipment A15 and A16. The atmospheric pressure process equipment A15 can be a cleaning equipment, and the atmospheric pressure process equipment A16 can be a baking equipment. In cluster C9, a cleaning step is performed before the EL film 112Bf is formed.

[0332] <Cluster C10> Cluster C10 includes a substrate transfer device 52c and vacuum process devices V13 to V16. The vacuum process devices V13 to V16 are evaporation devices for forming the EL film 112Bf and film formation devices (e.g., sputtering devices) for forming the protective film 125Bf. For example, the vacuum process device V13 can be used as a device for forming an organic compound layer that will become the light-emitting layer (G). Furthermore, the vacuum process devices V14 and V15 can be assigned to devices for forming organic compound layers such as an electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. Furthermore, the vacuum process device V16 can be assigned to a device for forming the protective film 125Bf.

[0333] <Cluster C11> The cluster C11 includes atmospheric pressure process equipment A17 to A21. The atmospheric pressure process equipment A17 to A21 may be equipment used in a lithography process. The equipment may be allocated in the same manner as in the cluster C3.

[0334] <Cluster C12> Cluster C12 has vacuum process equipment V17 and V18. The vacuum process equipment V17 can be a dry etching equipment that forms the EL layer 112B. The vacuum process equipment V18 can be an ashing equipment that removes the resist mask.

[0335] <Cluster C13> Cluster C13 includes atmospheric pressure process equipment A22 and A23. The atmospheric pressure process equipment A22 can be a wet etching equipment, and the atmospheric pressure process equipment A23 can be a baking equipment. In cluster C9, the etching process of the protective layers 125R, 125G, and 125B is performed.

[0336] <Cluster C14> Cluster C14 includes vacuum process apparatuses V19 to V21 and an unloading chamber ULD. The vacuum process apparatus V19 can be assigned to an apparatus (e.g., a vapor deposition apparatus) for forming any of the organic compound layers: electron injection layer, electron transport layer, charge generation layer, hole transport layer, and hole injection layer. The vacuum process apparatus V20 can be a film formation apparatus (e.g., a sputtering apparatus) for forming the common electrode 113. The vacuum process apparatus V21 can be a film formation apparatus (e.g., a sputtering apparatus) for forming the protective layer 121. Alternatively, a separate vacuum process apparatus V can be provided, and multiple different film formation apparatuses (e.g., vapor deposition apparatuses, ALD apparatuses, etc.) can be provided to form the common electrode 113 and the protective layer 121 as stacked films.

[0337] 22, the processing equipment, and the elements corresponding to the above-described manufacturing method are summarized in Table 2. Note that the description of the load lock chamber and the loading and unloading of the substrate into and from each device is omitted.

[0338]

[0339] The manufacturing apparatus according to one embodiment of the present invention has a function of automatically carrying out steps No. 1 to No. 53 shown in Table 2.

[0340] This embodiment mode can be implemented in appropriate combination with any of the structures described in the other embodiment modes.

[0341] A10: atmospheric pressure process device, A14: atmospheric pressure process device, A15: atmospheric pressure process device, A16: atmospheric pressure process device, A17: atmospheric pressure process device, A21: atmospheric pressure process device, A22: atmospheric pressure process device, A23: atmospheric pressure process device, B10: load lock chamber, B11: load lock chamber, B12: load lock chamber, B13: load lock chamber, C10: cluster, C11: cluster, C12: cluster, C13: cluster, C14: cluster, LD: load chamber, TF: transfer chamber, TF10: transfer chamber, TF11: transfer chamber, TF1 2: transfer chamber, TF13: transfer chamber, TF14: transfer chamber, TF46: transfer chamber, TF810: transfer chamber, ULD: unload chamber, V10: vacuum process device, V11: vacuum process device, V12: vacuum process device, V13: vacuum process device, V14: vacuum process device, V15: vacuum process device, V16: vacuum process device, V17: vacuum process device, V18: vacuum process device, V19: vacuum process device, V20: vacuum process device, V21: vacuum process device, VP: vacuum pump, 30: Film forming device, 31: film forming material supply unit, 32: mask jig, 33: substrate alignment unit, 35: opening, 40: film forming device, 41: rail, 42: film forming material supply unit, 43: cooling plate, 44: inlet, 45: outlet, 46: sealant, 52a: substrate transfer device, 52b: substrate transfer device, 52c: substrate transfer device, 60a: substrate, 60b: substrate, 60: substrate, 61: mask jig, 62: counterbore portion, 63: opening, 64: counterbore portion, 70a: transport device, 70b: transport device, 70c: transport device, 70d: transport device, 70e: transport device, 70f: transport device, 70g: transport device, 7 0h: conveying device, 70i: conveying device, 70j: conveying device, 70k: conveying device, 71a: conveying device, 71b: conveying device, 71c: conveying device, 72a: conveying device, 72b: conveying device, 72c: conveying device, 72d: conveying device, 72e: conveying device, 72f: conveying device, 80a: stage, 80b: stage, 80c: stage, 80d: stage, 80e: stage, 80f: stage, 81a: stage, 81b: stage, 81c: stage, 81d: stage, 81e: stage, 81f: stage, 82: pin, 83a: stage, 83b: stage,83c: stage, 84x: X-axis moving mechanism, 84y: Y-axis moving mechanism, 85: pusher pin, 86: camera, 87: rail, 91: lifting mechanism, 92: arm, 93: hand part, 94: lifting mechanism, 95: arm, 96: substrate fixing part, 97: rotation mechanism, 98: substrate rotation mechanism, 100: display device, 110B: light-emitting element, 110G: light-emitting element, 110R: light-emitting element, 111: pixel electrode, 112B: EL layer, 112Bf: EL film, 112G: EL layer, 112Gf: EL film, 1 12R: EL layer, 112Rf: EL film, 112W: EL layer, 113: common electrode, 114B: colored layer, 114G: colored layer, 114R: colored layer, 115: transistor, 116: transistor, 117: transistor, 121: protective layer, 125B: protective layer, 125Bf: protective film, 125G: protective layer, 125Gf: protective film, 125R: protective layer, 125Rf: protective film, 131: insulating layer, 143a: resist mask, 143b: resist mask, 143c: resist mask,

[0342]

Claims

1. The system includes a first cluster to an eleventh cluster and a first load lock chamber to a tenth load lock chamber, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the fourth cluster via the third load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the seventh cluster via the sixth load lock chamber; the seventh cluster is connected to the eighth cluster via the seventh load lock chamber; the eighth cluster is connected to the ninth cluster via the eighth load lock chamber; the ninth cluster is connected to the tenth cluster via the ninth load lock chamber; the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber; each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to a reduced pressure; Each of the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster is controlled to have an inert gas atmosphere; each of the first cluster, the fourth cluster, and the seventh cluster includes a first transfer device and a plurality of film forming devices; each of the third cluster, the sixth cluster, and the ninth cluster includes a second transport device, an etching device, and an ashing device; Each of the second cluster, the fifth cluster, and the eighth cluster includes a third transport device and a plurality of devices that perform a lithography process; the tenth cluster includes a fourth transport device and an etching device; the eleventh cluster includes a fifth transfer device and a plurality of film forming devices; the first transport device has a portion for fixing a substrate; By rotating the portion, the substrate is inverted. Light-emitting device manufacturing equipment.

2. A system comprising first to thirteenth clusters and first to twelfth load lock chambers, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the twelfth cluster via the third load lock chamber; the twelfth cluster is connected to the fourth cluster via the eleventh load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the thirteenth cluster via the sixth load lock chamber; the thirteenth cluster is connected to the seventh cluster via the twelfth load lock chamber; the seventh cluster is connected to the eighth cluster via the seventh load lock chamber; the eighth cluster is connected to the ninth cluster via the eighth load lock chamber; the ninth cluster is connected to the tenth cluster via the ninth load lock chamber; the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber; each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to a reduced pressure; each of the second cluster, the fifth cluster, the eighth cluster, the tenth cluster, the twelfth cluster, and the thirteenth cluster is controlled to have an inert gas atmosphere; each of the first cluster, the fourth cluster, and the seventh cluster includes a first transfer device and a plurality of film forming devices; each of the third cluster, the sixth cluster, and the ninth cluster includes a second transport device, an etching device, and an ashing device; Each of the second cluster, the fifth cluster, and the eighth cluster includes a third transport device and a plurality of devices that perform a lithography process; the tenth cluster includes a fourth transport device and an etching device; the eleventh cluster includes a fifth transfer device and a plurality of film forming devices; Each of the twelfth cluster and the thirteenth cluster includes a cleaning apparatus and a baking apparatus; the first transport device has a portion for fixing a substrate; By rotating the portion, the substrate is inverted. Light-emitting device manufacturing equipment.

3. The system includes a first cluster through a twelfth cluster and a first load lock chamber through a tenth load lock chamber, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the fourth cluster via the third load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the seventh cluster via the sixth load lock chamber; the seventh cluster is connected to the eighth cluster via the seventh load lock chamber; the eighth cluster is connected to the ninth cluster via the eighth load lock chamber; the ninth cluster is connected to the tenth cluster via the ninth load lock chamber; the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber; each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to a reduced pressure; Each of the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster is controlled to have an inert gas atmosphere; Each of the first cluster, the fourth cluster, and the seventh cluster includes a first transport device, a substrate transfer device, and a plurality of film forming devices; each of the third cluster, the sixth cluster, and the ninth cluster includes a second transport device, an etching device, and an ashing device; Each of the second cluster, the fifth cluster, and the eighth cluster includes a third transport device and a plurality of devices that perform a lithography process; the tenth cluster includes a fourth transport device and an etching device; the eleventh cluster includes a fifth transfer device and a plurality of film forming devices; the substrate transfer device has a stage, a sixth transport device, and a seventh transport device; A mask jig can be placed on the stage, the first transport device has a function of transporting the mask jig on which a substrate is mounted, the sixth transport device has a function of inverting and mounting the substrate on the mask jig; the seventh transport device has a function of removing and inverting the substrate mounted on the mask jig; Light-emitting device manufacturing equipment.

4. A system comprising first to thirteenth clusters and first to twelfth load lock chambers, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the twelfth cluster via the third load lock chamber; the twelfth cluster is connected to the fourth cluster via the eleventh load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the thirteenth cluster via the sixth load lock chamber; the thirteenth cluster is connected to the seventh cluster via the twelfth load lock chamber; the seventh cluster is connected to the eighth cluster via the seventh load lock chamber; the eighth cluster is connected to the ninth cluster via the eighth load lock chamber; the ninth cluster is connected to the tenth cluster via the ninth load lock chamber; the tenth cluster is connected to the eleventh cluster via the tenth load lock chamber; each of the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster is controlled to a reduced pressure; each of the second cluster, the fifth cluster, the eighth cluster, the tenth cluster, the twelfth cluster, and the thirteenth cluster is controlled to have an inert gas atmosphere; Each of the first cluster, the fourth cluster, and the seventh cluster includes a first transport device, a substrate transfer device, and a plurality of film forming devices; each of the third cluster, the sixth cluster, and the ninth cluster includes a second transport device, an etching device, and an ashing device; Each of the second cluster, the fifth cluster, and the eighth cluster includes a third transport device and a plurality of devices that perform a lithography process; the tenth cluster includes a fourth transport device and an etching device; the eleventh cluster includes a fifth transfer device and a plurality of film forming devices; Each of the twelfth cluster and the thirteenth cluster includes a cleaning apparatus and a baking apparatus; the substrate transfer device has a stage, a sixth transport device, and a seventh transport device; A mask jig can be placed on the stage, the first transport device has a function of transporting the mask jig on which a substrate is mounted, the sixth transport device has a function of inverting and mounting the substrate on the mask jig; the seventh transport device has a function of removing and inverting the substrate mounted on the mask jig; Light-emitting device manufacturing equipment.

5. In claim 3 or claim 4, The substrate transfer device is provided with a camera, the sixth transport device is provided with a substrate rotating mechanism, aligning the substrate using the camera and the substrate rotation mechanism and mounting the substrate on the mask jig; Light-emitting device manufacturing equipment.

6. In any one of claims 3 to 5, A plurality of the substrates can be mounted on the mask jig. Light-emitting device manufacturing equipment.

7. In any one of claims 1 to 6, a fourteenth cluster; and a thirteenth load lock chamber; the fourteenth cluster is connected to the first cluster via the thirteenth load lock chamber; The fourteenth cluster is controlled to have an inert gas atmosphere; The fourteenth cluster includes a cleaning apparatus and a baking apparatus. Light-emitting device manufacturing equipment.

8. In claim 7, the fourteenth cluster includes a load chamber; The eleventh cluster has an unload chamber. Light-emitting device manufacturing equipment.

9. In any one of claims 1 to 8, The plurality of film forming apparatuses are one or more of an evaporation apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus. Light-emitting device manufacturing equipment.

10. In any one of claims 1 to 9, the etching apparatus included in each of the third cluster, the sixth cluster, and the ninth cluster is a dry etching apparatus; Light-emitting device manufacturing equipment.

11. In any one of claims 1 to 10, The etching apparatus in the tenth cluster is a wet etching apparatus. Light-emitting device manufacturing equipment.

12. In any one of claims 1 to 11, The apparatus includes a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus as a plurality of apparatuses for performing the lithography process. Light-emitting device manufacturing equipment.

13. In any one of claims 1 to 11, The plurality of apparatuses for performing the lithography process include a coating apparatus and a nanoimprint apparatus. Light-emitting device manufacturing equipment.

14. In any one of claims 1 to 13, The substrate is a silicon wafer. Light-emitting device manufacturing equipment.

15. In any one of claims 1 to 14, Each of the plurality of film forming apparatuses is provided with an alignment mechanism and a mask jig; the alignment mechanism has a function of bringing the substrate and the mask jig into close contact with each other; Light-emitting device manufacturing equipment.