Steering Wheel

Abstract

Provided is a display device having a novel configuration. The present invention comprises a plurality of display panels, a fixing member having a curved surface, and a casing for storing the fixing member. The display panel has a display portion having a pixel circuit, a non-display portion provided so as to surround the display portion, and a gate driver circuit and source driver circuit for driving the pixel circuit. The gate driver circuit is provided at a position overlapping with the display portion. The source driver circuit is provided at a position overlapping with the non-display portion. The plurality of display panels are fixed along the curved surface of the fixing member.

Description

display device

[0001] One embodiment of the present invention relates to a display device, an electronic device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof.

[0003] In this specification, the term "semiconductor device" refers to any device that can function by utilizing semiconductor characteristics, and electro-optical devices, semiconductor circuits, and electronic devices are all included in the category of semiconductor devices.

[0004] Display devices have become increasingly commoditized as a result of recent technological innovations, and in order to gain a competitive edge in this environment, products with higher added value are required.

[0005] For example, research and development is underway on display devices that combine multiple display panels to have display surfaces with excellent design and complex shapes. Patent Document 1 discloses the configuration of a light-emitting device in which multiple display panels are arranged along a framework to form a developable surface between curved portions.

[0006] JP 2015-207556 A

[0007] In order to create a product with higher added value, it is desirable that it is not only stylish but also durable. In particular, in the case of a display device with a display surface having a complex shape, bending can cause display defects, which can impair convenience or reliability.

[0008] An object of one embodiment of the present invention is to provide a novel display device with excellent convenience or reliability, or a novel semiconductor device with excellent convenience or reliability, or a novel display device, a novel semiconductor device, or the like.

[0009] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0010] One embodiment of the present invention is a display device that includes a plurality of display panels, a fixing member having a curved surface, and a housing that houses the fixing member, the display panels including a display portion having pixel circuits and a gate driver circuit that drives the pixel circuits, the gate driver circuit being provided in a position that overlaps with the display portion, and the plurality of display panels being fixed along the curved surface of the fixing member.

[0011] One embodiment of the present invention is a display device including a plurality of display panels, a fixing member having a curved surface, and a housing in which the fixing member is housed, wherein the display panels include a display portion having pixel circuits, a non-display portion surrounding the display portion, and a gate driver circuit and a source driver circuit that drive the pixel circuits, wherein the gate driver circuit is provided in a position overlapping with the display portion, the source driver circuit is provided in a position overlapping with the non-display portion, and the plurality of display panels are fixed along the curved surface of the fixing member.

[0012] One embodiment of the present invention is a display device including a plurality of display panels, a fixing member having a curved surface, and a housing in which the fixing member is housed, wherein the display panels include a display portion having pixel circuits, a non-display portion surrounding the display portion, and a gate driver circuit and a source driver circuit that drive the pixel circuits, wherein the gate driver circuit is provided in a position overlapping with the display portion, the source driver circuit is provided in a position overlapping with the non-display portion, and the plurality of display panels are fixed along the curved surface of the fixing member so as to have an area overlapping with the non-display portion.

[0013] One aspect of the present invention is a display device having a first display panel, a plurality of second display panels, a truncated cone-shaped fixing member having a flat surface and a curved surface, and a housing in which the fixing member is housed, wherein the first display panel and the second display panel each have a display unit having pixel circuits and a gate driver circuit that drives the pixel circuits, the gate driver circuit being provided at a position overlapping the display unit, the first display panel being fixed along the flat surface of the fixing member, and the plurality of second display panels being fixed along the curved surface of the fixing member.

[0014] One aspect of the present invention is a display device having a first display panel, a plurality of second display panels, a truncated cone-shaped fixing member having a flat surface and a curved surface, and a housing in which the fixing member is housed, wherein the first display panel and the second display panel each have a display portion having pixel circuits, a non-display portion arranged to surround the display portion, and a gate driver circuit and a source driver circuit that drive the pixel circuits, wherein the gate driver circuit is arranged in a position overlapping with the display portion, and the source driver circuit is arranged in a position overlapping with the non-display portion, wherein the first display panel is fixed along the flat surface of the fixing member, and the plurality of second display panels are fixed along the curved surface of the fixing member.

[0015] One aspect of the present invention is a display device having a first display panel, a plurality of second display panels, a truncated cone-shaped fixing member having a flat surface and a curved surface, and a housing in which the fixing member is housed, wherein the first display panel and the second display panel each have a display portion having pixel circuits, a non-display portion arranged to surround the display portion, and a gate driver circuit and a source driver circuit that drive the pixel circuits, wherein the gate driver circuit is arranged in a position overlapping with the display portion, and the source driver circuit is arranged in a position overlapping with the non-display portion, the first display panel is fixed along the flat surface of the fixing member, and the first display panel and the plurality of second display panels are fixed along the curved surface of the fixing member so as to have an area overlapping with the non-display portion.

[0016] One embodiment of the present invention is a display device that includes a display panel having a cutout portion and a bent portion, a rectangular pyramidal-shaped fixing member, and a housing that houses the fixing member, the display panel including a display portion having pixel circuits and a gate driver circuit that drives the pixel circuits, the gate driver circuit being provided in a position that overlaps with the display portion, the display panel including the cutout portion disposed at a corner of an upper surface of the fixing member, and the bent portion being bent along an edge of the upper surface of the fixing member.

[0017] Other aspects of the present invention will be described in the following embodiments and in the drawings.

[0018] According to one embodiment of the present invention, a novel display device with excellent convenience or reliability can be provided. Alternatively, a novel semiconductor device with excellent convenience or reliability can be provided. Alternatively, a novel display device, a novel semiconductor device, or the like can be provided.

[0019] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0020] FIGS. 1A to 1C are diagrams illustrating an example of the configuration of a display device. FIGS. 2A to 2E are diagrams illustrating an example of the configuration of a display device. FIGS. 3A and 3B are diagrams illustrating an example of the configuration of a display device. FIGS. 4A to 4E are diagrams illustrating an example of the configuration of a display device. FIGS. 5A to 5D are diagrams illustrating an example of the configuration of a display device. FIG. 6 is a diagram illustrating an example of the configuration of a display device. FIGS. 7A and 7B are diagrams illustrating an example of the configuration of a display device. FIGS. 8A and 8B are diagrams illustrating an example of the configuration of a display device. FIGS. 9A to 9C are diagrams illustrating an example of the configuration of a display device. FIGS. 10A and 10B are diagrams illustrating an example of the configuration of a display device. FIGS. 11A to 11E are diagrams illustrating an example of the configuration of a display device. FIGS. 12A to 12E are diagrams illustrating an example of the configuration of a display device. FIGS. 13A to 13F are diagrams illustrating an example of the configuration of a display device. FIGS. 14A and 14B are diagrams illustrating an example of the configuration of a display device. FIGS. 15A and 15B are diagrams illustrating an example of the configuration of a display device. Fig. 16A to Fig. 16D are diagrams for explaining a configuration example of a display device. Fig. 17A to Fig. 17C are diagrams for explaining a configuration example of a display device. Fig. 18A to Fig. 18D are diagrams for explaining a configuration example of a display device. Fig. 19A to Fig. 19F are diagrams for explaining a configuration example of a display device. Fig. 20A to Fig. 20F are diagrams for explaining a configuration example of a display device. Fig. 21A and Fig. 21B are diagrams for explaining a configuration example of a display device. Fig. 22 is a diagram for explaining a configuration example of a display device. Fig. 23A to Fig. 23F are diagrams for explaining a configuration example of a display device.

[0021] The following describes an embodiment of the present invention. However, one embodiment of the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, one embodiment of the present invention should not be interpreted as being limited to the description of the embodiment shown below.

[0022] In this specification, the ordinal numbers "first," "second," and "third" are used to avoid confusion between components. Therefore, they do not limit the number of components. Furthermore, they do not limit the order of the components. For example, a component referred to as "first" in one embodiment of this specification may be a component referred to as "second" in another embodiment or in the claims. For example, a component referred to as "first" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0023] In the drawings, the same elements or elements having similar functions, elements made of the same material, or elements formed at the same time may be given the same reference numerals, and repeated description thereof may be omitted.

[0024] In this specification, for example, the power supply potential VDD may be abbreviated as potential VDD, VDD, etc. This also applies to other components (for example, signals, voltages, circuits, elements, electrodes, wiring, etc.).

[0025] Furthermore, when the same reference numeral is used for multiple elements, particularly when it is necessary to distinguish between them, an identification symbol such as "_1", "_2", "_n", or "_m, n" may be added to the reference numeral. For example, the second wiring GL is referred to as wiring GL_2.

[0026] Embodiment Mode 1 In this embodiment mode, a configuration of a display device that has a display surface with excellent design and is durable against impacts and has excellent convenience and reliability will be described.

[0027] Fig. 1A is a perspective view illustrating a display device 10A of one embodiment of the present invention, Fig. 1B is an exploded schematic view of the display device 10A illustrated in Fig. 1A, and Fig. 1C is a schematic view illustrating a structural example of a display panel 11p included in the display device 10A.

[0028] 1A includes a housing 30 that houses a display panel 11 that is made up of a plurality of display panels 11p. The display panel 11 has a developable surface that is created by connecting the plurality of display panels 11p together.

[0029] 1A shows an example in which a hemispherical display portion is formed by connecting multiple display panels 11p. With this configuration, the display device 10A can be configured to have a display surface with excellent design. Note that, although FIG. 1A shows an example in which eight display panels 11p are connected together, the present invention is not limited to this.

[0030] 1B includes a display panel 11 including a plurality of display panels 11p, a fixing member 20 having a curved surface 21, and a housing 30. Each of the display panels 11p is attached with an FPC 12 (Flexible Printed Circuit) housed in the housing 30.

[0031] The fixing member 20 to which the multiple display panels 11p are fixed has a curved surface 21 corresponding to the developable surface created by connecting the multiple display panels 11p. The fixing member 20 can be made of a plastic material such as fiber-reinforced plastic (FRP), which allows for lightweight construction and allows for the formation of a curved surface with excellent design. The fixing member 20 can be made of a plastic substrate such as polyimide (PI), aramid, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), or silicone resin. The curved surface 21 preferably has high impact resistance to prevent the display panel 11p from deforming when touched.

[0032] The housing 30 is configured to accommodate non-display portions of the display panels 11p, such as the FPC 12, with the plurality of display panels 11p fixed along the curved surface 21 of the fixing member 20. This configuration allows for a display device with a curved display surface. The hollow portion of the housing 30 can accommodate, for example, an airbag.

[0033] Although not shown in FIG. 1 , a protective substrate for protecting the display panel 11 may be provided on the display panel 11. The protective substrate not only protects the surface of the display panel 11 but also increases the mechanical strength of the display device. The protective substrate is made of a material that is translucent at least in the area that overlaps with the display area. The protective substrate may also have light-blocking properties so that areas other than the area that overlaps with the display area are not visible. The protective substrate may be made of the same material as the fixing member 20. The configuration in which the protective substrate is provided on the display panel 11 has the effect of making the seams between the multiple display panels 11p less noticeable.

[0034] The display panel 11 shown in Fig. 1C illustrates a state in which a plurality of display panels 11p are connected together. In addition to the FPC 12 shown in Fig. 1B, Fig. 1C also illustrates a source driver circuit 13, a display section 14, and a non-display section 15. Note that Fig. 1B illustrates, as an example, a COG (Chip On Glass) system in which an IC chip of the source driver circuit 13 is provided on a substrate, but a COF (Chip on Film) system may also be used.

[0035] It is preferable that the plurality of display panels 11p be configured to be separately divided, as this configuration can alleviate stress at the joints between the display panels 11p when the plurality of display panels 11p are combined to form a hemispherical surface.

[0036] Fig. 2A illustrates the details of the display panel 11p shown in Fig. 1C. In Fig. 2A, in addition to the FPC 12, source driver circuit 13, display section 14, and non-display section 15 shown in Fig. 1B, pixels 16, and gate driver circuit 17 are also illustrated.

[0037] The display section 14, in which the pixels 16 are provided, is provided with a display device such as a light-emitting device and a pixel circuit for controlling the display by the display device. The non-display section 15 is provided so as to surround the display section 14, and is provided with an FPC 12 and a source driver circuit 13.

[0038] The display device and pixel circuits provided in the display unit 14 are provided on a substrate. The substrate on which the display device and pixel circuits are provided is non-rectangular and flexible. When the hemispherical display surface shown in FIG. 1A is configured using the display panel 11p, a non-rectangular and flexible substrate is preferred in order to provide the desired display surface that matches the curved surface 21 of the fixing member 20, with the bent region 17AR and non-bent region 13AR shown in FIG. 2A.

[0039] Examples of materials for such substrates include polyester resins such as PET and PEN, polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, PC resins, PES resins, polyamide resins (nylon, aramid, etc.), polysiloxane resins, cycloolefin resins, polystyrene resins, polyamideimide resins, polyurethane resins, polyvinyl chloride resins, polyvinylidene chloride resins, polypropylene resins, PTFE resins, and ABS resins. Materials with low linear expansion coefficients are particularly preferred, and examples of suitable materials include polyamideimide resins, polyimide resins, polyamide resins, and PET. Substrates with resin-impregnated fibers and substrates with a lower linear expansion coefficient obtained by mixing inorganic fillers into the resin can also be used. These substrate materials are preferred because, unlike glass and other materials, they reduce the risk of fragments scattering upon impact.

[0040] The flexible substrate may be constructed by laminating a layer using the above-mentioned material with at least one of a hard coat layer (e.g., a silicon nitride layer) that protects the surface of the device from scratches, a layer made of a material that can disperse pressure (e.g., an aramid resin layer), etc.

[0041] The flexible substrate can be processed or cut into a non-rectangular shape. The pixel circuits and display devices may be formed directly on the flexible substrate, or may be formed by forming transistors or light-emitting devices on a glass substrate or the like, peeling them off from the glass substrate, and then bonding them to the flexible substrate using an adhesive layer. There are various types of peeling or transposition methods, but they are not particularly limited, and known techniques may be used as appropriate. For the adhesive layer, various curing adhesives such as photo-curing adhesives (e.g., ultraviolet curing adhesives), reactive curing adhesives, thermosetting adhesives, and anaerobic adhesives may be used. Alternatively, an adhesive sheet or the like may be used.

[0042] The display devices and pixel circuits provided in the display unit 14 are arranged in a matrix. In this embodiment, organic EL elements, which are light-emitting devices, are used as the display devices.

[0043] Quantum dots can also be used as a color conversion (wavelength conversion) material for organic EL elements. Quantum dots are semiconductor nanocrystals with a diameter of several nanometers, and their size is 1×10 ３ Pieces to 1 x 10 ６ Quantum dots are composed of approximately 1000 atoms. Electrons, holes, and excitons are confined inside quantum dots, resulting in discrete energy states and a size-dependent energy shift. Even quantum dots made of the same material emit different wavelengths depending on their size, so the wavelength can be easily adjusted by changing the size of the quantum dots used.

[0044] The display unit 14 may also have a touch panel function, which allows the user to operate it by touching it with their hand, waving their hand over it, or using gestures.

[0045] When a light-emitting device such as an organic EL element is made into a device with a fine metal mask (FMM) structure, it can be difficult to create different levels of definition within the surface. Here, the FMM structure will be explained below.

[0046] To fabricate an FMM structure, a metal mask (also referred to as an FMM) with openings is set opposite the substrate so that the EL material can be deposited in the desired area during EL deposition. Then, EL deposition is performed through the FMM, depositing the EL material in the desired area. As the substrate size increases during EL deposition, the FMM size and weight also increase. Furthermore, heat and other factors may be applied to the FMM during EL deposition, which may cause deformation of the FMM. Alternatively, a method may be used in which a certain tension is applied to the FMM during EL deposition, so the weight and strength of the FMM are important parameters.

[0047] Therefore, when using an FMM to change the in-plane resolution of the display panel 11p, it is necessary to change the design of the FMM. However, when changing the design of the FMM, it is necessary to take into account deformation of the FMM, making it very difficult to change the in-plane resolution of the display panel. On the other hand, the display panel of one embodiment of the present invention is fabricated using an MML (metal maskless) structure, which provides an excellent advantage in that it is easy to change the in-plane resolution of the display panel. In other words, the display panel of one embodiment of the present invention (e.g., a non-rectangular flexible display panel) and the MML structure are highly compatible. In other words, flexible display panels and the MML structure have a high affinity.

[0048] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0049] The non-display section 15 is a region where pixels 16 are not provided, and a source driver circuit is provided in a position overlapping the non-display section 15. The source driver circuit 13 is provided in a non-bending region 13AR of the non-display section 15. The gate driver circuit 17 can be provided in a position overlapping the display section 14 by configuring it to include transistors manufactured in the same process as the pixel circuits of the pixels 16. An example configuration of the gate driver circuit 17 will be described later. By configuring the gate driver circuit 17 with transistors manufactured in the same process as the pixel circuits, the gate driver circuit 17 can be made less susceptible to damage even when placed in the bending region 17AR. Furthermore, since the gate driver circuit 17 can be placed in the display section 14, it can drive each pixel even in a non-rectangular display section, resulting in a display device with excellent design.

[0050] 2B to 2E, a configuration example of the pixel 16 shown in Fig. 2A will be described. The pixel 16 has a plurality of sub-pixels. The sub-pixels function as light-emitting devices that function as display devices or light-receiving devices that function as photoelectric conversion elements.

[0051] In this specification, the smallest unit within a single "pixel" that performs independent operation is defined as a "sub-pixel" for convenience in the explanation, but "pixel" may be replaced with "region" and "sub-pixel" may be replaced with "pixel".

[0052] In the display device of this embodiment, the pixel 16 may be configured to have multiple types of sub-pixels having light-emitting devices that emit different colors. For example, the pixel 16PIX shown in FIG. 2B may be configured to have three types of sub-pixels. The three sub-pixels include sub-pixels 16R, 16G, and 16B of three colors: red (R), green (G), and blue (B). Note that the sub-pixels may be configured to support four or more colors.

[0053] Sub-pixel 16R has a light-emitting device that emits red light, sub-pixel 16G has a light-emitting device that emits green light, and sub-pixel 16B has a light-emitting device that emits blue light.

[0054] The arrangement of the sub-pixels is not particularly limited, and various methods can be applied, such as a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0055] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. The top surface shape of the sub-pixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0056] Furthermore, in a display device having a light-emitting device and a light-receiving device in a pixel, for example, pixel 16PIX shown in FIG. 2C can be configured to have a sub-pixel 16PS having a light-receiving function in addition to three types of sub-pixels (sub-pixels 16R, 16G, and 16B). Because the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source, and the remaining sub-pixels can display the image. Note that pixel 16PIX may also have a sub-pixel having a light-emitting device that emits infrared light.

[0057] The subpixel 16PS has a light-receiving device. Although there are no particular limitations on the wavelength of light detected by the subpixel 16PS, it is preferable that the light-receiving device of the subpixel 16PS has sensitivity to light emitted by the light-emitting device of the subpixel R, subpixel G, or subpixel B.

[0058] The light receiving area of ​​the subpixel 16PS may be configured to be smaller than the light emitting areas of the other subpixels. The smaller the light receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve the resolution. Therefore, by using the subpixel 16PS, high-definition or high-resolution imaging can be performed. For example, the subpixel 16PS can be used to perform imaging for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0059] The subpixel 16PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the subpixel 16PS preferably detects infrared light, which enables touch detection even in dark places.

[0060] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). The touch sensor can detect an object when the display device and the object are in direct contact with each other. The near-touch sensor can detect an object even if the object does not touch the display device. For example, it is preferable that the display device be configured to detect the object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0061] In order to capture high-resolution images, it is preferable that the sub-pixels 16PS are provided in all pixels of the display device. On the other hand, when used in a touch sensor or near-touch sensor, the sub-pixels 16PS do not require high accuracy compared to when capturing images of fingerprints, etc., so they may be provided in only some of the pixels of the display device. By making the number of sub-pixels 16PS in the display device smaller than the number of sub-pixels 16R, etc., the detection speed can be increased.

[0062] FIG. 2D shows an example of a pixel circuit 16el applicable to the sub-pixels 16R, 16G, and 16B having a light-emitting device, and FIG. 2E shows an example of a pixel circuit 16ps applicable to the sub-pixel 16PS having a light-receiving device.

[0063] 2D includes a light-emitting device EL, a transistor M11, a transistor M12, and a capacitance element C11. In this example, a light-emitting diode is used as the light-emitting device EL. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0064] The transistor M11 has a gate electrically connected to a wiring GL, one of a source or a drain electrically connected to a wiring SL, and the other of the source or the drain electrically connected to one electrode of the capacitor C11 and the gate of the transistor M12. One of the source or the drain of the transistor M12 is electrically connected to a wiring EAL, and the other is electrically connected to the anode of the light-emitting device EL and the other electrode of the capacitor C11. The cathode of the light-emitting device EL is electrically connected to a wiring ACL.

[0065] A constant potential is supplied to the wiring EAL and the wiring ACL. The anode side of the light-emitting device EL can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M11 is controlled by a signal supplied to the wiring GL and functions as a selection transistor for controlling the selection state of the pixel circuit 16el. The transistor M12 functions as a drive transistor for controlling the current flowing through the light-emitting device EL in accordance with the potential supplied to its gate. Note that although the pixel circuit 16el has two transistors in the above description, the pixel circuit 16el may have three or more transistors.

[0066] 2E includes a light receiving device PS, a transistor M15, a transistor M16, a transistor M17, a transistor M18, and a capacitance element C21. Here, an example is shown in which a photodiode is used as the light receiving device PS.

[0067] The light-receiving device PS has an anode electrically connected to the wiring ACL and a cathode electrically connected to one of the source and drain of the transistor M15. The transistor M15 has a gate electrically connected to the wiring TX and the other of the source and drain electrically connected to one electrode of the capacitor C21, one of the source and drain of the transistor M16, and the gate of the transistor M17. The transistor M16 has a gate electrically connected to the wiring RS and the other of the source and drain electrically connected to the wiring V11. The transistor M17 has one of the source and drain electrically connected to the wiring V13 and the other of the source and drain electrically connected to one of the source and drain of the transistor M18. The transistor M18 has a gate electrically connected to the wiring SE and the other of the source and drain electrically connected to the wiring WX. The other electrode of the capacitor C21 is electrically connected to the wiring V12.

[0068] When the light receiving device PS is provided, by arranging a plurality of gate driver circuits 17 shown in FIG. 2A, it becomes possible to sequentially select each transistor included in the light receiving device PS.

[0069] A constant potential is supplied to the wiring V11, the wiring V12, and the wiring V13. When the light-receiving device PS is driven with a forward bias, a potential lower than the potential of the wiring ACL is supplied to the wiring V11. The transistor M16 is controlled by a signal supplied to the wiring RS and has a function of resetting the potential of a node connected to the gate of the transistor M17 to the potential supplied to the wiring V11. The transistor M15 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PS. The transistor M17 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M18 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out an output according to the potential of the node to an external circuit connected to the wiring WX.

[0070] Although the transistors are shown as n-channel transistors in FIGS. 2D and 2E, p-channel transistors can also be used.

[0071] The transistors included in the pixel circuits 16el and the transistors included in the pixel circuits 16ps are preferably formed side by side on the same substrate, and in particular, the transistors included in the pixel circuits 16el and the transistors included in the pixel circuits 16ps are preferably mixed and periodically arranged in one region.

[0072] It is also preferable to provide one or more layers including one or both of a transistor and a capacitor at a position overlapping the light receiving device PS or the light emitting device EL, thereby reducing the effective area occupied by each pixel circuit and realizing a high-definition light receiving section or display section.

[0073] Here, it is preferable to use transistors that use metal oxide (oxide semiconductor) in the semiconductor layer in which a channel is formed for the transistors M11 and M12 included in the pixel circuit 16el and the transistors M15 to M18 included in the pixel circuit 16ps.

[0074] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use a transistor including an oxide semiconductor for the transistor M11, the transistor M15, and the transistor M16, which are connected in series with the capacitor C11 or the capacitor C21. Furthermore, by using a transistor including an oxide semiconductor for other transistors as well, manufacturing costs can be reduced. However, one embodiment of the present invention is not limited thereto. A transistor using silicon for a semiconductor layer (hereinafter also referred to as a Si transistor) may also be used.

[0075] Note that the off-state current of an OS transistor per 1 μm of channel width at room temperature is 1 aA (1×10−１８ A) Below, 1zA (1×10 −２１ A) or less, or 1yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0076] Note that a display device according to one embodiment of the present invention can have a structure including an OS transistor and a light-emitting element with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting elements (also referred to as lateral leakage current, side leakage current, or the like). Furthermore, with this structure, when an image is displayed on the display device, a viewer can observe one or more of image clarity, image sharpness, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting elements are extremely low can provide a display with extremely low light leakage that may occur during black display (also referred to as true black display).

[0077] Furthermore, in order to increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, a high voltage can be applied between the source and drain of the OS transistor, thereby increasing the amount of current flowing through the light-emitting device and increasing the light emission luminance of the light-emitting device.

[0078] Furthermore, when the transistor operates in the saturation region, the OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely determined by changing the gate-source voltage, and the amount of current flowing through the light-emitting device can be precisely controlled. This allows for precise control of the light emission luminance of the light-emitting device (the number of gray levels in the pixel circuit can be increased).

[0079] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can flow a constant current (saturation current) that is more stable than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable constant current can be flowed through a light-emitting device, for example, even when the current-voltage characteristics of a light-emitting device containing an EL material vary. In other words, when an OS transistor operates in a saturation region, the source-drain current hardly changes even when the source-drain voltage increases, and thus the light-emitting luminance of the light-emitting device can be stabilized.

[0080] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "suppression of floating black," "increase in light emission luminance," "multiple gray levels," "suppression of variations in light-emitting devices," and the like. Therefore, a display device including the pixel circuit can display clear and smooth images, and as a result, one or more of image clarity, image sharpness, and a high contrast ratio can be observed. Furthermore, by configuring the driving transistor included in the pixel circuit to have an extremely low off-state current, black display in the display device can be achieved with extremely little light leakage (true black display).

[0081] Alternatively, the transistors M11, M12, and M15 to M18 may be transistors using silicon as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0082] Alternatively, a structure may be adopted in which one or more of the transistors M11, M12, and M15 to M18 are transistors including an oxide semiconductor (OS transistors), and the remaining transistors are transistors including silicon (Si transistors). Note that the Si transistors may be transistors including low-temperature polysilicon (LTPS) (hereinafter referred to as LTPS transistors). A structure in which an OS transistor and an LTPS transistor are used in combination may be referred to as LTPO. The LTPO structure allows the use of an LTPS transistor with high mobility and an OS transistor with low off-state current, thereby providing a display panel with high display quality.

[0083] 3A and 3B show an example of a pulse output circuit and a timing chart applicable to the gate driver circuit 17 described in Fig. 2A. The pulse output circuit and the timing chart described in Fig. 3A and 3B are also effective for a gate driver circuit that drives the light-receiving device PS.

[0084] 3A shows an example of a circuit configuration of a pulse output circuit 17S applicable to the gate driver circuit 17. The pulse output circuit 17S shown in FIG. 3A includes transistors M21 to M24 and a capacitor C31. The transistors and capacitors included in the pulse output circuit 17S are provided in a region surrounded by the region where the pixel circuit 16el or the pixel circuit 16ps is provided (in FIG. 3A , wirings SL_M to SL_M+5 and wirings GL_N-1 to SL_N+1) (N and M are both natural numbers). Note that a wiring VSSL is a wiring that applies a voltage VSS.

[0085] 3B illustrates, as signals and voltages applied to each transistor or wiring, a gate clock signal CK_A, a gate clock signal CK_B, an output signal applied to wiring GL_N, a gate start pulse GSP (or an output signal of the previous pulse output circuit) applied to wiring GL_N-1, and an output signal of the next pulse output circuit 17S applied to wiring GL_N+1. In addition, in FIG. 3A, a node connected to the transistors M21, M22, and M23 and the capacitance element C31 is illustrated as netA.

[0086] Fig. 3B is a timing chart for explaining the operation of the pulse output circuit 17S shown in Fig. 3A. In Fig. 3B, the symbols attached to the wiring or signals in Fig. 3A will be replaced with the signals explained in Fig. 3B.

[0087] At time T1 in Figure 3B, CK_A is low and CK_B is high, at which time GL_N-1 is set to high, raising the voltage of netA. Next, at time T2, GL_N-1 is set to low, causing netA to float. At time T2, CK_A is set to high and CK_B is set to low, causing the voltage of netA, which is floating, to rise due to the capacitive coupling of capacitive element C31. As a result, transistor M23 is conductive, and GL_N is set to high. At time T3, GL_N+1 is set to high, causing netA to fall to low, and CK_B is set to high, causing GL_N to fall to low.

[0088] 4A to 4D are diagrams for explaining modified examples in which a plurality of display panels are combined to form a display panel having a display surface with excellent design.

[0089] As described above, the plurality of display panels 11 shown in Fig. 4A have display sections 14 and non-display sections 15. Fig. 4B is a front view of a configuration in which the plurality of display panels 11 shown in Fig. 4A are arranged to form a hemispherical display surface. Fig. 4C is a schematic cross-sectional view of Fig. 4B taken along a plane perpendicular to the z-direction (dotted line Z3-Z4).

[0090] 4C , in the display device of one embodiment of the present invention, when non-display portions 15 of adjacent display panels are overlapped, the area of ​​the region that appears as non-display portion 15 on the hemispherical display surface can be reduced, and therefore vertical or horizontal stripes that are visible around non-display portion 15 can be suppressed.

[0091] Furthermore, it is preferable to cover the display surface of the display panel 11 with a resin layer in order to adjust for changes in refractive index caused by overlapping non-display sections 15. This configuration will be described with reference to the cross-sectional structure shown in Fig. 4D. Fig. 4D illustrates display panels 11a, 11b, and 11c as display panels configured by overlapping non-display sections 15.

[0092] As shown in FIG. 4D , a configuration can be adopted in which a light-transmitting resin layer 331 is provided to cover the upper surfaces of the display panels 11a to 11c. Covering the upper surfaces of the display panels 11a to 11c with the resin layer 331 can increase the mechanical strength of the display panels. Furthermore, forming the resin layer 331 so that the surface is flat can improve the display quality of images displayed in the display area. For example, a highly flat resin layer 331 can be formed using a coating device such as a slit coater, curtain coater, gravure coater, roll coater, or spin coater.

[0093] Furthermore, the difference in refractive index n between the resin layer 331 and the substrate used on the display surface side of the display panels 11a to 11c is preferably 20% or less, more preferably 10% or less, and even more preferably 5% or less. By using the resin layer 331 having such a refractive index, the difference in refractive index between the display panels 11a to 11c and the resin layer is reduced, allowing light to be extracted to the outside efficiently. Furthermore, by providing the resin layer 331 having such a refractive index so as to cover the step portions between adjacent display panels, the step portions are less likely to be visible as vertical or horizontal stripes, thereby improving the display quality of images displayed in the display area of ​​the display panel.

[0094] The material used for the resin layer 331 is preferably a resin with high light transmittance, and for example, organic resins such as epoxy resin, aramid resin, acrylic resin, polyimide resin, polyamide resin, and polyamideimide resin can be used.

[0095] It is also preferable to provide a protective substrate 300a on the display panels 11a to 11c via a resin layer 331. The protective substrate 300a not only protects the surface of the display device but also increases the mechanical strength of the display device. The protective substrate 300a is made of a material that is translucent at least in the area that overlaps with the display area. The protective substrate 300a may also have a light-blocking property so that areas other than the area that overlaps with the display area are not visible.

[0096] The protective substrate 300a may have a function as a touch panel. In addition, when the display panels 11a to 11c are flexible and bendable, it is preferable that the protective substrate 300a is also flexible.

[0097] Furthermore, it is preferable that the difference in refractive index n between the protective substrate 300a and the substrate used on the display surface side of the display panels 11a to 11c or the resin layer 331 is 20% or less, preferably 10% or less, and more preferably 5% or less. Note that the refractive index refers to the value for visible light, specifically light with a wavelength of 400 nm or more and 750 nm or less, and refers to the average refractive index for light having a wavelength in this range. The average refractive index is the sum of the measured refractive index values ​​for each light having a wavelength in the above range divided by the number of measurement points. Note that the refractive index of air is 1.

[0098] The protective substrate 300a may be a film-like plastic substrate such as polyimide (PI), aramid, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), silicone resin, etc. The protective substrate 300a is preferably flexible.

[0099] 4D , a resin layer 333 may be provided on the surface opposite the display surface of each of the display panels 11a to 11c, with a protective substrate 300b sandwiched between the resin layer 333. By sandwiching the display panels 11a to 11c between two protective substrates, the mechanical strength of the display device can be further increased. Furthermore, by making the resin layers 331 and 333 the same thickness and using materials of the same thickness for the protective substrates 300a and 300b, multiple display panels can be positioned in the center of the stack. For example, when bending a stack including display panels, positioning the display panels in the center in the thickness direction reduces the lateral stress acting on the display panels as they are bent, thereby preventing damage.

[0100] 4D illustrates a configuration in which the non-display portions 15 of different display panels are overlapped to reduce the area of ​​the non-display portions 15, but other configurations are also possible. For example, the display portions 14 and the non-display portions 15 may be arranged so as to overlap, as illustrated in FIG. 4E. In this case, the non-display portions 15 are translucent, so that the image on the display portions 14 can be viewed even if the display portions 14 are covered by a step portion. This makes it possible to make vertical or horizontal stripes in the non-display portions 15 less visible.

[0101] As described above, the structure of one embodiment of the present invention can provide a display device with high display quality. Alternatively, the structure of one embodiment of the present invention can provide a display device with excellent convenience or reliability. Alternatively, the structure of one embodiment of the present invention can increase the degree of freedom in designing the display device, thereby improving the designability of the display device.

[0102] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0103] (Embodiment 2) In this embodiment, a configuration of a display device having excellent convenience and reliability, which has a configuration that is durable against impacts and the like, in addition to a configuration that provides a display surface with excellent design, will be described, which is different from that of Embodiment 1. Note that detailed description of the same as that of Embodiment 1 will be omitted, as the description is incorporated herein by reference.

[0104] Fig. 5A is a perspective view illustrating a display device 10B of one embodiment of the present invention. Fig. 5B is an exploded schematic view of the display device 10B illustrated in Fig. 5A. Fig. 5C is a schematic view illustrating a structural example of a display panel 11a included in the display device 10B. Fig. 5D is a schematic view illustrating a structural example of a display panel 11q included in the display device 10B.

[0105] 5A includes a housing 30 that houses a display panel 11 that includes a display panel 11a and a plurality of display panels 11b. The display panel 11 has a developable surface that is created by connecting the display panel 11a and the plurality of display panels 11b together.

[0106] 5A illustrates an example in which a display panel 11a and a plurality of display panels 11b are joined together to form a truncated cone-shaped display unit. This configuration allows the display device 10B to have a display surface with excellent design.

[0107] 5B includes a display panel 11 having a display panel 11q composed of a display panel 11a and a plurality of display panels 11b, a fixing member 20 having a curved surface 22 and a flat surface 23, and a housing 30. An FPC 12 (Flexible Printed Circuit) housed in the housing 30 is attached to each of the display panel 11a and the plurality of display panels 11b.

[0108] The fixing member 20 to which the multiple display panels 11p are fixed has a truncated cone shape formed by a curved surface 22 corresponding to the developable surface created by connecting the multiple display panels 11b together, and a flat surface 23 on which the display panel 11a is attached.

[0109] The housing 30 has a configuration in which the display panel 11a is fixed to the flat surface 23 of the fixing member 20, and a plurality of display panels 11b are fixed along the curved surface 22 of the fixing member, and in which the non-display portion of the display panel 11, such as the FPC 12, is housed. With this configuration, a display device having a display surface that has both flat and curved surfaces can be obtained.

[0110] The display panel 11a shown in Fig. 5C is a circular display panel. In Fig. 5C, in addition to the FPC 12 shown in Fig. 5B, a source driver circuit 13, a display section 14, a non-display section 15, pixels 16, and a gate driver circuit 17 are illustrated.

[0111] The source driver circuit 13, display section 14, non-display section 15, pixels 16, and gate driver circuit 17 of the display panel 11a are described in the same manner as in FIG. 2A of embodiment 1. The gate driver circuit 17 is configured using transistors fabricated in the same process as the pixel circuits, which makes it difficult for the gate driver circuit 17 to be damaged even when placed in the display section 14. Furthermore, since the gate driver circuit 17 can be placed in the display section 14, it is possible to drive each pixel even in a non-rectangular display section, thereby making it possible to provide a display device with excellent design.

[0112] 5D illustrates a display panel 11q in which multiple display panels 11b are connected. Preferably, the multiple display panels 11b are configured to be separated into separate pieces. This configuration can alleviate stress at the connection portions between the display panels 11b when the multiple display panels 11b are combined to form the display panel 11q.

[0113] Fig. 6 illustrates details of the display panel 11b shown in Fig. 5D. In Fig. 6, in addition to the FPC 12 shown in Fig. 5B, the source driver circuit 13, the display section 14, the non-display section 15, the pixels 16, and the gate driver circuit 17 are also illustrated.

[0114] The source driver circuit 13, display unit 14, non-display unit 15, pixels 16, and gate driver circuit 17 of the display panel 11b are described in the same manner as in FIG. 2A of embodiment 1. The gate driver circuit 17 is configured using transistors that are manufactured in the same process as the pixel circuits, making it difficult for the gate driver circuit 17 to be damaged even when placed in the display unit 14. Furthermore, since the gate driver circuit 17 can be placed in the display unit 14, it is possible to drive each pixel even in a non-rectangular display unit, resulting in a display device with excellent design.

[0115] As described above, the structure of one embodiment of the present invention can provide a display device with high display quality. Alternatively, the structure of one embodiment of the present invention can provide a display device with excellent convenience or reliability. Alternatively, the structure of one embodiment of the present invention can increase the degree of freedom in designing the display device, thereby improving the designability of the display device.

[0116] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0117] (Embodiment 3) In this embodiment, a configuration of a display device that is excellent in convenience and reliability, which has a configuration that is durable against impacts and the like, in addition to a configuration that provides a display surface with excellent design, will be described, which is different from that of Embodiments 1 and 2. Note that detailed description of the same description as in Embodiments 1 and 2 will be omitted, as the description is incorporated herein by reference.

[0118] 7A is a perspective view illustrating a display device 10C according to one embodiment of the present invention, and FIG. 7B is an exploded schematic view of the display device 10C shown in FIG.

[0119] 7A includes a housing 30 housing a display panel 11 made up of display panels 11f. The display panel 11 has a developable surface in the shape of a truncated quadrangular pyramid, which is created by folding and joining the display panels 11f. The display device 10C also includes a protective substrate 40 for blocking the display at the corners of the truncated quadrangular pyramid.

[0120] 7A illustrates an example in which a display panel 11f is formed by folding and joining display panels 11f to form a display portion in the shape of a truncated quadrangular pyramid. This configuration allows the display device 10C to have a display surface with excellent design.

[0121] 7B includes a protective substrate 40 for blocking the display at the corners of the truncated pyramid shape, a display panel 11 formed by folding and joining display panels 11f, a fixing member 20 for fixing the truncated pyramid shape display, and a housing 30. A plurality of FPCs (Flexible Printed Circuits) 12 housed in the housing 30 are attached to the display panel 11f.

[0122] The fixing member 20 to which the display panel 11 is fixed has a truncated pyramidal shape that is made by folding and joining the display panels 11f.

[0123] The housing 30 is configured to accommodate non-display portions of the display panel 11 such as the FPC 12 with the display panel 11f fixed to the fixing member 20 in the shape of a truncated quadrangular pyramid.

[0124] 8A illustrates the display panel 11f shown in FIG. 7B. In FIG. 8A, the source driver circuit 13, the display section 14, the non-display section 15, the pixels 16, the gate driver circuit 17, the bent section 18, and the cutout section 19 are illustrated.

[0125] The source driver circuit 13, display unit 14, non-display unit 15, pixels 16, and gate driver circuit 17 of the display panel 11f are described in the same manner as in FIG. 2A of embodiment 1. The gate driver circuit 17 is configured using transistors that are manufactured in the same process as the pixel circuits, making it difficult for the gate driver circuit 17 to be damaged even when placed in the display unit 14. Furthermore, since the gate driver circuit 17 can be placed in the display unit 14, it is possible to drive each pixel even in a non-rectangular display unit, resulting in a display device with excellent design.

[0126] The display panel 11f can be formed into a truncated quadrangular pyramid-shaped display panel 11f as shown in Fig. 8B by folding the folding portion 18 along the edge of the upper surface of the fixing member 20 with the cutout portion 19 disposed at the corner of the upper surface of the fixing member 20 and connecting the edges in the folded area. Also, the plurality of source driver circuits 13 provided in the non-display portion 15 shown in Fig. 8A are connected to the FPC 12 as shown in Fig. 8B. Furthermore, the cutout portion 19 shown in Fig. 8A can be provided to alleviate stress at the corners when the display panel 11f is folded and connected to form a truncated quadrangular pyramid.

[0127] In the display panel 11f, the arrangement of the source driver circuit 13 is not limited to the configuration shown in Fig. 8A. For example, as shown in Fig. 9A, the source driver circuit 13 may be arranged in one location. In addition, the configuration of the cutout portion 19 shown in Fig. 8A is not limited to a circular shape, and may be an acute-angled shape shown in Fig. 9B or a slit shape shown in Fig. 9C.

[0128] As described above, the structure of one embodiment of the present invention can provide a display device with high display quality. Alternatively, the structure of one embodiment of the present invention can provide a display device with excellent convenience or reliability. Alternatively, the structure of one embodiment of the present invention can increase the degree of freedom in designing the display device, thereby improving the designability of the display device.

[0129] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0130] Fourth Embodiment In this embodiment, a detailed configuration of the display unit 14 in the first embodiment will be described below.

[0131] 10A shows a top view of the display unit 14. The display unit 14 has a pixel unit in which a plurality of pixels 16 are arranged in a matrix, and a connection unit 140 outside the pixel unit. The regions between the pixels and the connection unit 140 are not light-emitting regions, but are included in the display unit 14.

[0132] A stripe arrangement is applied to the pixel 16 shown in Fig. 10A. The pixel 16 shown in Fig. 10A is composed of three subpixels, 16a, 16b, and 16c. The subpixels 16a, 16b, and 16c each have a light-emitting device that emits light of a different color. Examples of the subpixels 16a, 16b, and 16c include three subpixels of red (R), green (G), and blue (B), and three subpixels of yellow (Y), cyan (C), and magenta (M).

[0133] 10A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0134] 10A shows an example in which the connection portion 140 is located below the pixel portion when viewed from above, but this is not particularly limited. The connection portion 140 may be provided in at least one location on the upper, right, left, or lower side of the pixel portion when viewed from above. The connection portion 140 may be singular or plural.

[0135] FIG. 10B shows a cross-sectional view taken along the dashed dotted line X1-X2 in FIG. 10A.

[0136] 10B , display unit 14 includes light-emitting devices 130a, 130b, and 130c provided on transistor-containing layer 101, and insulating layers 131 and 132 provided to cover these light-emitting devices. Substrate 120 is bonded to insulating layer 132 with resin layer 122. In addition, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the regions between adjacent light-emitting devices.

[0137] The display region of one embodiment of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0138] The transistor-containing layer 101 may have, for example, a stacked structure in which a plurality of transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The transistor-containing layer 101 may have a recess between adjacent light-emitting devices. For example, a recess may be provided in an insulating layer located on the outermost surface of the transistor-containing layer 101. A configuration example of the transistor-containing layer 101 will be described later.

[0139] The light emitting devices 130a, 130b, and 130c each emit light of a different color, and preferably emit light of three colors, for example, red (R), green (G), and blue (B).

[0140] As the light-emitting devices 130a, 130b, and 130c, it is preferable to use an EL device such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Alternatively, it is also possible to use a light-emitting device such as an inorganic light-emitting diode (including LED, mini LED, micro LED, etc.). Examples of light-emitting materials that the EL device has include fluorescent materials (fluorescent materials), phosphorescent materials (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Note that, as the TADF material, a material that is in thermal equilibrium between a singlet excited state and a triplet excited state may be used. Such TADF materials have a short emission lifetime (excitation lifetime), and therefore can suppress a decrease in efficiency in a high-brightness region of a light-emitting device.

[0141] A light-emitting device has an EL layer between a pair of electrodes, one of which may be referred to as a pixel electrode and the other as a common electrode in this specification and the like.

[0142] A light-emitting device has a pair of electrodes, one of which functions as an anode and the other as a cathode. In the following, an example will be described in which the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0143] The light-emitting device 130a has a pixel electrode 111a on the transistor-containing layer 101, an island-shaped first organic layer 113a on the pixel electrode 111a, a fifth organic layer 114 on the island-shaped first organic layer 113a, and a common electrode 115 on the fifth organic layer 114. In the light-emitting device 130a, the first organic layer 113a and the fifth organic layer 114 can be collectively referred to as an EL layer.

[0144] The structure of the light emitting device of this embodiment is not particularly limited, and may be a single structure or a tandem structure. An example of the structure of the light emitting device will be described later in the seventh embodiment.

[0145] The light-emitting device 130b has a pixel electrode 111b on the transistor-containing layer 101, an island-shaped second organic layer 113b on the pixel electrode 111b, a fifth organic layer 114 on the island-shaped second organic layer 113b, and a common electrode 115 on the fifth organic layer 114. In the light-emitting device 130b, the second organic layer 113b and the fifth organic layer 114 can be collectively referred to as an EL layer.

[0146] The light-emitting device 130c has a pixel electrode 111c on the transistor-containing layer 101, an island-shaped third organic layer 113c on the pixel electrode 111c, a fifth organic layer 114 on the island-shaped third organic layer 113c, and a common electrode 115 on the fifth organic layer 114. In the light-emitting device 130c, the third organic layer 113c and the fifth organic layer 114 can be collectively referred to as an EL layer.

[0147] The light-emitting devices of each color share the same film as a common electrode. The common electrode shared by the light-emitting devices of each color is electrically connected to a conductive layer provided in the connection portion 140. As a result, the same potential is supplied to the common electrode of the light-emitting devices of each color.

[0148] Of the pixel electrode and the common electrode, the electrode from which light is extracted is preferably made of a conductive film that transmits visible light, and the electrode from which light is not extracted is preferably made of a conductive film that reflects visible light.

[0149] The pair of electrodes (pixel electrode and common electrode) of the light-emitting device can be formed from a material such as a metal, an alloy, an electrically conductive compound, or a mixture thereof. Specific examples include indium tin oxide (In-Sn oxide, also referred to as ITO), In-Si-Sn oxide (also referred to as ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Other examples of the metals that can be used include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals. Other examples of the metals that can be used include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), rare earth metals such as europium (Eu), and ytterbium (Yb), as well as alloys containing appropriate combinations of these metals, graphene, and the like.

[0150] The light-emitting device preferably has a micro-optical resonator (microcavity) structure. Therefore, one of a pair of electrodes of the light-emitting device preferably has a transmissive and reflective electrode for visible light, and the other preferably has a reflective electrode for visible light. By having the light-emitting device have a microcavity structure, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby intensifying the light emitted from the light-emitting device.

[0151] The semi-transmitting / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0152] The light transmittance of the transparent electrode is 40% or more. For example, it is preferable to use an electrode with a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes is 1×10 −２ Preferably, it is Ωcm or less.

[0153] The first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c are each provided in an island shape. The first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c each have a light-emitting layer. It is preferable that the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c each have a light-emitting layer that emits light of a different color.

[0154] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0155] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0156] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0157] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0158] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0159] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0160] The first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c may further include, as a layer other than the light-emitting layer, a layer containing a substance having a high hole-injection property, a substance having a high hole-transport property, a hole-blocking material, a substance having a high electron-transport property, a substance having a high electron-injection property, an electron-blocking material, or a bipolar substance (a substance having a high electron-transport property and a high hole-transport property).

[0161] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0162] For example, the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c may each have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. The hole injection layer, the hole transport layer, the hole blocking layer, the electron blocking layer, the electron transport layer, and the electron injection layer may be referred to as functional layers.

[0163] The EL layer may include one or more layers commonly formed for each color, such as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as the fifth organic layer 114. All layers of the EL layer may be formed separately for each color. In other words, the EL layer does not need to include a layer commonly formed for each color.

[0164] Each of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c preferably includes a light-emitting layer and a carrier transport layer on the light-emitting layer. This prevents the light-emitting layer from being exposed to the outermost surface during the manufacturing process of the display unit 14, thereby reducing damage to the light-emitting layer. This improves the reliability of the light-emitting device.

[0165] The hole injection layer is a functional layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0166] The hole transport layer is a functional layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer containing a hole transport material. Examples of the hole transport material include 10 −６ cm ２A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0167] The electron transport layer is a functional layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer containing an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0168] The electron injection layer is a functional layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0169] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ, where X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0170] Alternatively, an electron transporting material may be used for the electron injection layer. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the electron transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0171] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0172] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition temperature (Tg) and is superior in heat resistance compared to BPhen.

[0173] In the case of fabricating a light-emitting device with a tandem structure, an intermediate layer is provided between two light-emitting units, which has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0174] For example, a material applicable to an electron injection layer, such as lithium, can be suitably used for the intermediate layer. For example, a material applicable to a hole injection layer can be suitably used for the intermediate layer. For example, a layer containing a hole transport material and an acceptor material (electron acceptor material) can be used for the intermediate layer. For example, a layer containing an electron transport material and a donor material can be used for the intermediate layer. By forming an intermediate layer having such a layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0175] The side surfaces of the pixel electrodes 111a, 111b, and 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c are covered with the insulating layer 125 and the insulating layer 127. This prevents the fifth organic layer 114 (or the common electrode 115) from coming into contact with any of the side surfaces of the pixel electrodes 111a, 111b, and 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, thereby preventing a short circuit in the light-emitting device.

[0176] The insulating layer 125 preferably covers at least the side surfaces of the pixel electrodes 111a, 111b, and 111c. Furthermore, the insulating layer 125 preferably covers the side surfaces of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c. The insulating layer 125 may be configured to be in contact with the side surfaces of the pixel electrodes 111a, 111b, and 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c.

[0177] The insulating layer 127 is provided on the insulating layer 125 so as to fill recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with the side surfaces of the pixel electrodes 111a, 111b, and 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, with the insulating layer 125 interposed therebetween.

[0178] Note that either the insulating layer 125 or the insulating layer 127 does not necessarily have to be provided. For example, when the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the side surfaces of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c. The insulating layer 127 can be provided on the protective layer 121 so as to fill the spaces between the EL layers of the light-emitting devices.

[0179] The fifth organic layer 114 and the common electrode 115 are provided on the first organic layer 113a, the second organic layer 113b, the third organic layer 113c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step occurs between a region where the pixel electrode and the EL layer are provided and a region where the pixel electrode and the EL layer are not provided (a region between light-emitting devices). The display region of one embodiment of the present invention includes the insulating layer 125 and the insulating layer 127, which can flatten the step and improve the coverage of the fifth organic layer 114 and the common electrode 115. Therefore, poor connection due to step disconnection can be suppressed. Alternatively, the step can be suppressed from locally thinning the common electrode 115, resulting in an increase in electrical resistance.

[0180] In order to improve the flatness of the surfaces on which the fifth organic layer 114 and the common electrode 115 are formed, it is preferable that the heights of the upper surfaces of the insulating layers 125 and 127 are equal to or approximately equal to the height of the upper surface of at least one of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c. The upper surface of the insulating layer 127 preferably has a flat shape, and may have protrusions or recesses.

[0181] The insulating layer 125 has regions in contact with the side surfaces of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c, and functions as a protective insulating layer for the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c. By providing the insulating layer 125, it is possible to prevent impurities (oxygen, moisture, etc.) from entering the inside from the side surfaces of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c, thereby making it possible to provide a highly reliable display region.

[0182] If the width (thickness) of the insulating layer 125 in the region in contact with the side surfaces of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c is large in a cross-sectional view, the distance between the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c may become large, resulting in a low aperture ratio. Also, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing impurities from penetrating into the interior from the side surfaces of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c may become small. The width (thickness) of the insulating layer 125 in the region in contact with the side surfaces of the first organic layer 113 a, the second organic layer 113 b, and the third organic layer 113 c is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, even more preferably 5 nm to 150 nm, even more preferably 5 nm to 100 nm, even more preferably 10 nm to 100 nm, and even more preferably 10 nm to 50 nm. By setting the width (thickness) of the insulating layer 125 within the above range, a display region having a high aperture ratio and high reliability can be obtained.

[0183] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an insulating oxide film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by the ALD method as the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent function of protecting the EL layer.

[0184] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0185] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0186] The insulating layer 127 provided on the insulating layer 125 has the function of planarizing recesses formed in the insulating layer 125 between adjacent light-emitting devices. In other words, the insulating layer 127 has the effect of improving the flatness of the surface on which the common electrode 115 is formed. An insulating layer containing an organic material can be suitably used as the insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 127. Alternatively, a photosensitive resin can be used as the insulating layer 127. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0187] The difference in height between the upper surface of the insulating layer 127 and the upper surface of any one of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the insulating layer 127. Alternatively, for example, the insulating layer 127 may be provided so that the upper surface of any one of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c is higher than the upper surface of the insulating layer 127. Alternatively, for example, the insulating layer 127 may be provided so that the upper surface of the insulating layer 127 is higher than the upper surface of the light-emitting layer of the first organic layer 113a, the second organic layer 113b, or the third organic layer 113c.

[0188] It is preferable to provide insulating layers 131 and 132 on the light-emitting devices 130a, 130b, and 130c. By providing the insulating layers 131 and 132, the reliability of the light-emitting devices can be improved.

[0189] There is no limitation on the conductivity of the insulating layers 131 and 132. The insulating layers 131 and 132 can be formed using at least one of an insulating film, a semiconductor film, and a conductive film.

[0190] The insulating layers 131 and 132 have inorganic films, which can prevent oxidation of the common electrode 115 and prevent impurities (moisture, oxygen, etc.) from entering the light-emitting devices 130a, 130b, and 130c, thereby suppressing deterioration of the light-emitting devices and improving the reliability of the display area.

[0191] The insulating layers 131 and 132 can be made of inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film.

[0192] Each of the insulating layers 131 and 132 preferably includes an insulating nitride film or an insulating nitride oxide film, and more preferably includes an insulating nitride film.

[0193] Alternatively, an inorganic film containing In—Sn oxide (also referred to as ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like can be used for the insulating layers 131 and 132. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0194] When light emitted from the light-emitting device is extracted through the insulating layers 131 and 132, it is preferable that the insulating layers 131 and 132 have high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0195] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the insulating layers 131 and 132. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0196] Furthermore, the insulating layers 131 and 132 may include an organic film. For example, the insulating layer 132 may include both an organic film and an inorganic film.

[0197] The insulating layer 131 and the insulating layer 132 may be formed by different film formation methods. Specifically, the insulating layer 131 may be formed by an atomic layer deposition (ALD) method, and the insulating layer 132 may be formed by a sputtering method.

[0198] The upper end portions of the pixel electrodes 111a, 111b, and 111c are not covered with an insulating layer, which allows the distance between adjacent light-emitting devices to be extremely narrow, thereby enabling a high-definition or high-resolution display area.

[0199] The display unit 14 of the present embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, between EL layers, or between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of the first organic layer 113 a and the side surface of the second organic layer 113 b, or the distance between the side surface of the second organic layer 113 b and the side surface of the third organic layer 113 c, has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0200] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of the substrate 120 may also be provided with an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, etc.

[0201] The substrate 120 may be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 may be made of glass having a thickness sufficient to provide flexibility.

[0202] When a circularly polarizing plate is superimposed on a display area, it is preferable to use a substrate with high optical isotropy as a substrate included in the display device. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0203] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0204] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic resin films.

[0205] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0206] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets or the like may also be used.

[0207] Materials that can be used for the gate, source, and drain of a transistor as well as conductive layers such as various wirings and electrodes that constitute a display panel include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0208] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These materials can also be used for conductive layers such as various wirings and electrodes constituting a display panel, and for conductive layers (conductive layers functioning as pixel electrodes or common electrodes) in light-emitting devices.

[0209] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0210] [Pixel Layout] Next, pixel layouts different from that shown in Fig. 10A will be described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of the arrangement of sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0211] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0212] An S-stripe arrangement is applied to the pixel 16 shown in Fig. 11A. The pixel 16 shown in Fig. 11A is composed of three subpixels, 16a, 16b, and 16c. For example, as shown in Fig. 12A, the subpixel 16a may be a blue subpixel B, the subpixel 16b may be a red subpixel R, and the subpixel 16c may be a green subpixel G.

[0213] The pixel 16 shown in FIG. 11B includes a subpixel 16a having a generally trapezoidal top surface shape with rounded corners, a subpixel 16b having a generally triangular top surface shape with rounded corners, and a subpixel 16c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 16a has a larger light-emitting area than the subpixel 16b. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size can be. For example, as shown in FIG. 12B, the subpixel 16a may be a green subpixel G, the subpixel 16b may be a red subpixel R, and the subpixel 16c may be a blue subpixel B.

[0214] The pixels 26a and 26b shown in Fig. 11C are arranged in a Pentile arrangement. Fig. 11C shows an example in which a pixel 26a having subpixels 16a and 16b and a pixel 26b having subpixels 16b and 16c are arranged alternately. For example, as shown in Fig. 12C, the subpixel 16a may be a red subpixel R, the subpixel 16b may be a green subpixel G, and the subpixel 16c may be a blue subpixel B.

[0215] 11D and 11E are arranged in a delta configuration. Pixel 26a has two subpixels (subpixels 16a and 16b) in the top row (first row) and one subpixel (subpixel 16c) in the bottom row (second row). Pixel 26b has one subpixel (subpixel 16c) in the top row (first row) and two subpixels (subpixels 16a and 16b) in the bottom row (second row). For example, as shown in FIG. 12D , subpixel 16a may be a red subpixel R, subpixel 16b may be a green subpixel G, and subpixel 16c may be a blue subpixel B.

[0216] FIG. 11D shows an example in which each subpixel has a substantially rectangular top surface shape with rounded corners, and FIG. 11E shows an example in which each subpixel has a circular top surface shape.

[0217] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0218] Furthermore, in a manufacturing method of a display panel according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0219] In order to form the top surface of the EL layer into a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0220] In addition, even in the pixel 16 to which the stripe arrangement shown in FIG. 10A is applied, for example, as shown in FIG. 12E, the subpixel 16a can be a red subpixel R, the subpixel 16b can be a green subpixel G, and the subpixel 16c can be a blue subpixel B.

[0221] In one embodiment of the present invention, an organic EL device is used as the light-emitting device.

[0222] In the display portion 14 of one embodiment of the present invention, light-emitting devices are arranged in a matrix in a pixel portion, and an image can be displayed in the pixel portion.

[0223] The display unit 14 of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 0.1 Hz to 240 Hz) depending on content displayed on the display unit 14, thereby reducing power consumption.

[0224] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0225] Embodiment 5 In this embodiment, a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device) that can be used for a display device that is one embodiment of the present invention will be described.

[0226] [Light-Emitting Device] Light-emitting devices can be broadly divided into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission with a single structure, two or more light-emitting layers may be selected so that the light emitted from each of the two or more light-emitting layers has a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a configuration in which the entire light-emitting device emits white light can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0227] A tandem-structure device preferably has two or more light-emitting units between a pair of electrodes, with each light-emitting unit preferably including one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the luminance per given current can be increased, and the device can be made more reliable than a single-structure light-emitting device. To obtain white light emission in a tandem structure, the device can be configured to combine light from the light-emitting layers of multiple light-emitting units to obtain white light. The combination of light-emitting colors that can produce white light is the same as in the single-structure configuration. In a tandem-structure device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0228] Furthermore, when the above-described white light-emitting device (single structure or tandem structure) is compared with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can reduce power consumption compared to the white light-emitting device. When it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the manufacturing process of a white light-emitting device is simpler than that of a light-emitting device having an SBS structure, and therefore the manufacturing cost can be reduced or the manufacturing yield can be increased, making it preferable.

[0229] 13A , the light-emitting device has an EL layer 790 between a pair of electrodes (a lower electrode 791 and an upper electrode 792). The EL layer 790 can be composed of multiple layers, such as a layer 720, a light-emitting layer 711, and a layer 730. The layer 720 can have, for example, a layer containing a substance with high electron injection properties (electron injection layer) and a layer containing a substance with high electron transport properties (electron transport layer). The light-emitting layer 711 contains, for example, a light-emitting compound. The layer 730 can have, for example, a layer containing a substance with high hole injection properties (hole injection layer) and a layer containing a substance with high hole transport properties (hole transport layer).

[0230] A structure having the layer 720, the light-emitting layer 711, and the layer 730 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 13A is referred to as a single structure in this specification.

[0231] 13B shows a modified example of the EL layer 790 of the light-emitting device shown in Fig. 13A. Specifically, the light-emitting device shown in Fig. 13B has a layer 730-1 on a lower electrode 791, a layer 730-2 on the layer 730-1, a light-emitting layer 711 on the layer 730-2, a layer 720-1 on the light-emitting layer 711, a layer 720-2 on the layer 720-1, and an upper electrode 792 on the layer 720-2. For example, when the lower electrode 791 is an anode and the upper electrode 792 is a cathode, the layer 730-1 functions as a hole injection layer, the layer 730-2 functions as a hole transport layer, the layer 720-1 functions as an electron transport layer, and the layer 720-2 functions as an electron injection layer. Alternatively, when the lower electrode 791 is used as a cathode and the upper electrode 792 is used as an anode, the layer 730-1 functions as an electron injection layer, the layer 730-2 functions as an electron transport layer, the layer 720-1 functions as a hole transport layer, and the layer 720-2 functions as a hole injection layer. By using such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 711 and increase the efficiency of carrier recombination in the light-emitting layer 711.

[0232] As shown in FIGS. 13C and 13D, a configuration in which a plurality of light-emitting layers (light-emitting layers 711, 712, and 713) are provided between the layer 720 and the layer 730 is also a variation of the single structure.

[0233] 13E and 13F, a configuration in which a plurality of light-emitting units (EL layer 790a, EL layer 790b) are connected in series via an intermediate layer (charge generating layer) 740 is referred to as a tandem structure in this specification. Note that, although the configuration shown in FIGS. 13E and 13F is referred to as a tandem structure in this specification and the like, this is not limiting, and for example, the tandem structure may also be referred to as a stack structure. Note that by using a tandem structure, a light-emitting device capable of emitting light with high brightness can be obtained.

[0234] In FIG. 13C, the light-emitting layer 711, the light-emitting layer 712, and the light-emitting layer 713 may be made of the same light-emitting material.

[0235] Furthermore, different light-emitting materials may be used for the light-emitting layer 711, the light-emitting layer 712, and the light-emitting layer 713. When the light emitted from the light-emitting layer 711, the light-emitting layer 712, and the light-emitting layer 713 has a complementary color relationship, white light can be obtained. Fig. 13D shows an example in which a colored layer 785 that functions as a color filter is provided. When white light passes through the color filter, light of a desired color can be obtained.

[0236] 13E, the same light-emitting material may be used for the light-emitting layer 711 and the light-emitting layer 712. Alternatively, light-emitting materials that emit different light may be used for the light-emitting layer 711 and the light-emitting layer 712. When the light emitted by the light-emitting layer 711 and the light emitted by the light-emitting layer 712 are complementary colors, white light emission is obtained. FIG. 13F shows an example in which a colored layer 785 is further provided.

[0237] 13C, 13D, 13E, and 13F, the layer 720 and the layer 730 may have a laminated structure consisting of two or more layers, as shown in FIG. 13B.

[0238] 13D, the same light-emitting material may be used for the light-emitting layers 711, 712, and 713. Similarly, in FIG. 13F, the same light-emitting material may be used for the light-emitting layers 711 and 712. In this case, by applying a color conversion layer instead of the colored layer 785, light of a desired color different from the light-emitting material can be obtained. For example, by using a blue light-emitting material for each light-emitting layer and transmitting blue light through the color conversion layer, light with a longer wavelength than blue (e.g., red, green, etc.) can be obtained. For the color conversion layer, a fluorescent material, a phosphorescent material, or quantum dots can be used.

[0239] A structure that produces different luminescent colors (here, blue (B), green (G), and red (R)) for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0240] The light-emitting device can emit light of red, green, blue, cyan, magenta, yellow, or white, depending on the material of the EL layer 790. Furthermore, the color purity can be further improved by providing the light-emitting device with a microcavity structure.

[0241] A light-emitting device that emits white light preferably has a configuration in which two or more types of light-emitting materials are contained in the light-emitting layer. To obtain white light emission, light-emitting materials can be selected such that the respective emissions of the two or more light-emitting materials have a complementary color relationship. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer complementary to each other, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0242] The light-emitting layer preferably contains two or more light-emitting materials that emit light of R (red), G (green), B (blue), Y (yellow), O (orange), etc. Alternatively, it is preferable that the light-emitting layer contains two or more light-emitting materials, and the light emitted by each of the light-emitting materials contains spectral components of two or more colors of R, G, and B.

[0243] 14A shows a schematic cross-sectional view of light emitting device 750R, light emitting device 750G, light emitting device 750B, and light receiving element 760. Light emitting device 750R, light emitting device 750G, light emitting device 750B, and light receiving element 760 have upper electrode 792 as a common layer.

[0244] The light-emitting device 750R includes a pixel electrode 791R, a layer 751, a layer 752, a light-emitting layer 753R, a layer 754, a layer 755, and an upper electrode 792. The light-emitting device 750G includes a pixel electrode 791G and a light-emitting layer 753G. The light-emitting device 750B includes a pixel electrode 791B and a light-emitting layer 753B.

[0245] The layer 751 includes, for example, a layer containing a substance with high hole-injection properties (hole-injection layer), the layer 752 includes, for example, a layer containing a substance with high hole-transport properties (hole-transport layer), the layer 754 includes, for example, a layer containing a substance with high electron-transport properties (electron-transport layer), and the layer 755 includes, for example, a layer containing a substance with high electron-injection properties (electron-injection layer).

[0246] Alternatively, a structure in which the layer 751 has an electron-injecting layer, the layer 752 has an electron-transporting layer, the layer 754 has a hole-transporting layer, and the layer 755 has a hole-injecting layer may be used.

[0247] 14A illustrates the layer 751 and the layer 752 separately, but the present invention is not limited to this. For example, when the layer 751 has a function of both a hole-injection layer and a hole-transport layer, or when the layer 751 has a function of both an electron-injection layer and an electron-transport layer, the layer 752 may be omitted.

[0248] The light-emitting layer 753R of the light-emitting device 750R contains a light-emitting material that emits red light, the light-emitting layer 753G of the light-emitting device 750G contains a light-emitting material that emits green light, and the light-emitting layer 753B of the light-emitting device 750B contains a light-emitting material that emits blue light. The light-emitting devices 750G and 750B have a configuration in which the light-emitting layer 753R of the light-emitting device 750R is replaced with the light-emitting layer 753G and the light-emitting layer 753B, respectively, and are otherwise similar in configuration to the light-emitting device 750R.

[0249] The layers 751, 752, 754, and 755 may have the same configuration (material, film thickness, etc.) in the light-emitting devices of each color, or may have different configurations.

[0250] The light-receiving element 760 has a pixel electrode 791PD, a layer 761, a layer 762, a layer 763, and an upper electrode 792. The light-receiving element 760 may have a configuration without a hole injection layer and an electron injection layer.

[0251] The layer 762 includes an active layer (also called a photoelectric conversion layer). The layer 762 has a function of absorbing light in a specific wavelength band and generating carriers (electrons and holes).

[0252] The layer 761 and the layer 763 each include, for example, either a hole transport layer or an electron transport layer. When the layer 761 includes a hole transport layer, the layer 763 includes an electron transport layer. On the other hand, when the layer 761 includes an electron transport layer, the layer 763 includes a hole transport layer.

[0253] In addition, the light receiving element 760 may have the pixel electrode 791PD as the anode and the upper electrode 792 as the cathode, or the pixel electrode 791PD as the cathode and the upper electrode 792 as the anode.

[0254] 14B is a modified example of FIG. 14A. In FIG. 14B, the layer 755 is provided in common between the light-emitting elements and between the light-receiving elements, similar to the upper electrode 792. In this case, the layer 755 can be called a common layer. By providing one or more common layers between the light-emitting elements and between the light-receiving elements in this way, the manufacturing process can be simplified, and therefore the manufacturing cost can be reduced.

[0255] Here, the layer 755 functions as an electron injection layer or a hole injection layer for the light-emitting device 750. At this time, the layer 755 functions as an electron transport layer or a hole transport layer for the light-receiving element 760. Therefore, the layer 763 functioning as an electron transport layer or a hole transport layer does not need to be provided in the light-receiving element 760 shown in FIG. 14B.

[0256] [Light-Emitting Device] Here, a specific example of the configuration of the light-emitting device will be described.

[0257] The light-emitting device has at least a light-emitting layer. The light-emitting device may further have, as a layer other than the light-emitting layer, a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, an electron-blocking material, a substance with high electron-injection properties, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like.

[0258] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0259] For example, a light emitting device can include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0260] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0261] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. Examples of the hole transporting material include 10 −６ cm ２ A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0262] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0263] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0264] The electron injection layer may be formed of, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ２ ), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO ｘ ), alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. The electron injection layer may have a stacked structure of two or more layers. For example, the stacked structure may have a structure in which lithium fluoride is used in the first layer and ytterbium is provided in the second layer.

[0265] Alternatively, the electron injection layer may be formed using a material having electron transport properties. For example, a compound having an unshared electron pair and an electron-deficient heteroaromatic ring may be used as the material having electron transport properties. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring may be used.

[0266] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) of -3.6 eV to -2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by CV (cyclic voltammetry), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0267] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition temperature (Tg) and is superior in heat resistance compared to BPhen.

[0268] The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0269] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0270] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0271] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0272] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0273] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0274] [Light-receiving device] The active layer of the light-receiving device includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor in the active layer is shown. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (e.g., vacuum deposition), allowing the use of a common manufacturing device.

[0275] The n-type semiconductor material of the active layer is fullerene (e.g., C ６０ , C ７０Examples of suitable electron-accepting organic semiconductor materials include fullerene derivatives and other electron-accepting organic semiconductor materials. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads across a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as light-receiving devices. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０ Other fullerene derivatives include [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), and 1',1",4',4"-Tetrahydro-di[1,4]methanenaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA).

[0276] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0277] Examples of the p-type semiconductor material of the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0278] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0279] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0280] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0281] For example, the active layer is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0282] The light-receiving device may further include, as a layer other than the active layer, a layer containing a substance with high hole-transporting properties, a substance with high electron-transporting properties, a bipolar substance (a substance with high electron-transporting properties and high hole-transporting properties), etc. Furthermore, without being limited to the above, the light-receiving device may further include a layer containing a substance with high hole-injecting properties, a hole-blocking material, a material with high electron-injecting properties, an electron-blocking material, etc.

[0283] The light-receiving device may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device may be formed by a method such as vapor deposition (including vacuum deposition), transfer, printing, inkjet printing, or coating.

[0284] For example, the hole transport material or the electron blocking material may be a polymer compound such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), or an inorganic compound such as molybdenum oxide or copper iodide (CuI). The electron transport material or the hole blocking material may be an inorganic compound such as zinc oxide (ZnO), or an organic compound such as polyethyleneimine ethoxylate (PEIE). The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0285] Furthermore, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviation: PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used in the active layer. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0286] The active layer may also contain a mixture of three or more materials. For example, in order to broaden the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0287] This concludes the description of the light receiving device.

[0288] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0289] Embodiment 6 In this embodiment, a structural example of a light-emitting device or a display device that can be used as a light-emitting and receiving device according to one embodiment of the present invention will be described.

[0290] One embodiment of the present invention is a display device including a light-emitting element (also referred to as a light-emitting device) and a light-receiving element (also referred to as a light-receiving device). For example, a full-color display device can be realized by including three types of light-emitting elements that respectively emit red (R), green (G), and blue (B) light.

[0291] In one embodiment of the present invention, EL layers and an EL layer and an active layer are processed into fine patterns by photolithography without using a shadow mask such as a metal mask. This makes it possible to realize a display device with high definition and a large aperture ratio, which have been difficult to achieve until now. Furthermore, because the EL layers can be separately formed, a display device with extremely vivid images, high contrast, and high display quality can be realized.

[0292] While it is difficult to achieve a gap of less than 10 μm between EL layers of different colors or between an EL layer and an active layer using, for example, a metal mask, the above-described method allows the gap to be narrowed to 3 μm or less, 2 μm or less, or even 1 μm or less. For example, by using an exposure device for LSIs, the gap can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting elements or between a light-emitting element and a light-receiving element, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, and even less than 100%.

[0293] Furthermore, the patterns of the EL layer and active layer themselves can be made much smaller than when a metal mask is used. Furthermore, for example, when a metal mask is used to separately form an EL layer, thickness variations occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as the light-emitting region relative to the overall area of ​​the pattern. On the other hand, with the above-described fabrication method, a pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as the light-emitting region. Therefore, the above-described fabrication method can achieve both high definition and a high aperture ratio.

[0294] Organic films formed using FMM (Fine Metal Mask) often have an extremely small taper angle (e.g., greater than 0 degrees and less than 30 degrees), with the thickness decreasing toward the edge. Therefore, organic films formed using FMM have a continuous connection between their side and top surfaces, making it difficult to clearly identify the side surfaces. On the other hand, one embodiment of the present invention has an EL layer processed without using FMM, resulting in clear side surfaces. In particular, one embodiment of the present invention preferably has a portion of the EL layer with a taper angle of 30 degrees or more and 120 degrees or less, preferably 60 degrees or more and 120 degrees or less.

[0295] In this specification, the term "tapered end of an object" refers to a cross-sectional shape in which the angle between the side surface (surface) and the surface to be formed (bottom surface) in the end region is greater than 0 degrees and less than 90 degrees, and the thickness increases continuously from the end. The taper angle refers to the angle between the bottom surface (surface to be formed) and the side surface (surface) at the end of the object.

[0296] A more specific example will be described below.

[0297] 15A shows a schematic top view of the display unit 14. The display unit 14 has a plurality of red light-emitting elements 90R, green light-emitting elements 90G, blue light-emitting elements 90B, and light-receiving elements 90S. In FIG. 4A, in order to easily distinguish between the light-emitting elements, the light-emitting regions of the light-emitting elements (and the light-receiving regions of the light-receiving elements) are labeled with R, G, B, and S.

[0298] The light-emitting elements 90R, 90G, 90B, and the light-receiving elements 90S are arranged in a matrix. Fig. 15A shows a configuration in which two elements are alternately arranged in one direction. Note that the arrangement of the light-emitting elements is not limited to this, and arrangements such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, and a zigzag arrangement may also be used, or a pentile arrangement, a diamond arrangement, or the like may also be used.

[0299] 15A also shows a connection electrode 111C that is electrically connected to the common electrode 113. The connection electrode 111C is given a potential (e.g., an anode potential or a cathode potential) to be supplied to the common electrode 113. The connection electrode 111C is provided outside the display area where the light-emitting elements 90R and the like are arranged. Also in FIG. 15A, the common electrode 113 is shown by a dashed line.

[0300] The connection electrode 111C can be provided along the periphery of the display area. For example, it may be provided along one side of the periphery of the display area, or it may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped, L-shaped, U-shaped (square bracket-shaped), square-shaped, or the like.

[0301] Fig. 15B is a schematic cross-sectional view corresponding to dashed dotted lines A1-A2 and C1-C2 in Fig. 15A, showing the light-emitting element 90B, the light-emitting element 90R, the light-receiving element 90S, and the connection electrode 111C.

[0302] The light-emitting element 90G, which is not shown in the schematic cross-sectional view, can have the same configuration as the light-emitting element 90B or the light-emitting element 90R, and the same description can be applied hereinafter.

[0303] The light-emitting element 90B has a pixel electrode 111, an organic layer 112B, an organic layer 114, and a common electrode 113. The light-emitting element 90R has a pixel electrode 111, an organic layer 112R, an organic layer 114, and a common electrode 113. The light-receiving element 90S has a pixel electrode 111, a common electrode 115, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are provided in common to the light-emitting element 90B, the light-emitting element 90R, and the light-receiving element 90S. The organic layer 114 can also be referred to as a common layer.

[0304] The organic layer 112R contains a light-emitting organic compound that emits light having an intensity in at least the red wavelength range. The organic layer 112B contains a light-emitting organic compound that emits light having an intensity in at least the blue wavelength range. The common electrode 115 contains a photoelectric conversion material that is sensitive to visible light or infrared light. The organic layer 112R and the organic layer 112B can each be referred to as an EL layer.

[0305] The organic layer 112R, the organic layer 112B, and the common electrode 115 may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. The organic layer 114 may not have a light-emitting layer. For example, the organic layer 114 has one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0306] Here, it is preferable that the uppermost layer in the stacked structure of organic layer 112R, organic layer 112B, and common electrode 115, i.e., the layer in contact with organic layer 114, is a layer other than the light-emitting layer. For example, it is preferable that an electron injection layer, electron transport layer, hole injection layer, hole transport layer, or a layer other than these is provided to cover the light-emitting layer, and that layer is in contact with organic layer 114. In this way, when fabricating each light-emitting element, the reliability of the light-emitting element can be improved by protecting the upper surface of the light-emitting layer with another layer.

[0307] The pixel electrode 111 is provided for each element. The common electrode 113 and the organic layer 114 are provided as a continuous layer common to each light-emitting element. A conductive film that is translucent to visible light is used for either the pixel electrode or the common electrode 113, and a conductive film that is reflective is used for the other. By making each pixel electrode translucent and the common electrode 113 reflective, a bottom-emission display device can be obtained. Conversely, by making each pixel electrode reflective and the common electrode 113 translucent, a top-emission display device can be obtained. Incidentally, by making both the pixel electrodes and the common electrode 113 translucent, a dual-emission display device can also be obtained.

[0308] An insulating layer 131 is provided to cover the end of the pixel electrode 111. The end of the insulating layer 131 is preferably tapered. In this specification and the like, a tapered end of an object means that the angle formed between the surface and the surface on which the object is formed in the end region is greater than 0 degrees and less than 90 degrees, and the object has a cross-sectional shape in which the thickness increases continuously from the end.

[0309] Furthermore, by using an organic resin for the insulating layer 131, the surface can be made gently curved, which improves the coverage of the film formed on the insulating layer 131.

[0310] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0311] Alternatively, an inorganic insulating material may be used for the insulating layer 131. Examples of inorganic insulating materials that can be used for the insulating layer 131 include oxide or nitride films such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and hafnium oxide. Alternatively, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, and the like may be used.

[0312] As shown in Figure 15B, a gap is provided between the two organic layers between light-emitting elements of different colors and between the light-emitting element and the light-receiving element. In this manner, it is preferable that the organic layer 112R, the organic layer 112B, and the common electrode 115 are arranged so as not to contact each other. This effectively prevents current from flowing through two adjacent organic layers, which would otherwise cause unintended light emission. This allows for increased contrast and a display device with high display quality.

[0313] The organic layer 112R, the organic layer 112B, and the common electrode 115 preferably have a taper angle of 30 degrees or more. The organic layer 112R, the organic layer 112G, and the organic layer 112B preferably have an angle between the side surface (surface) and the bottom surface (surface to be formed) at the end of the organic layer 112R, the organic layer 112G, and the organic layer 112B of 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 120 degrees or less. Alternatively, the organic layer 112R, the organic layer 112G, and the organic layer 112B preferably each have a taper angle of 90 degrees or nearly so (for example, 80 degrees or more and 100 degrees or less).

[0314] A protective layer 121 is provided on the common electrode 113. The protective layer 121 has a function of preventing impurities such as water from diffusing from above into each light-emitting element.

[0315] The protective layer 121 may have, for example, a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film. Alternatively, the protective layer 121 may be made of a semiconductor material such as indium gallium oxide or indium gallium zinc oxide.

[0316] Furthermore, a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121. For example, a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable. Furthermore, it is preferable that the organic insulating film functions as a planarizing film. This allows the upper surface of the organic insulating film to be flat, thereby improving the coverage of the inorganic insulating film thereon and enhancing the barrier properties. Furthermore, since the upper surface of the protective layer 121 is flat, when a structure (e.g., a color filter, a touch sensor electrode, a lens array, etc.) is provided above the protective layer 121, the influence of uneven shapes caused by the structure below can be reduced, which is preferable.

[0317] In the connection portion 130, a common electrode 113 is provided in contact with the connection electrode 111C, and a protective layer 121 is provided to cover the common electrode 113. Also, an insulating layer 131 is provided to cover the end of the connection electrode 111C.

[0318] A description will be given below of a structural example of a display device that is partially different from that shown in Fig. 15B. Specifically, an example in which the insulating layer 131 is not provided will be shown.

[0319] 16A to 16C show an example in which the side surface of the pixel electrode 111 and the side surface of the organic layer 112R, the organic layer 112B, or the common electrode 115 are substantially aligned.

[0320] 16A , the organic layer 114 is provided to cover the top and side surfaces of the organic layer 112R, the organic layer 112B, and the common electrode 115. The organic layer 114 can prevent the pixel electrode 111 and the common electrode 113 from coming into contact with each other and causing an electrical short circuit.

[0321] 16B shows an example in which an insulating layer 125 is provided in contact with the organic layer 112R, the organic layer 112G, and the organic layer 112B, as well as the side surface of the pixel electrode 111. The insulating layer 125 can effectively suppress an electrical short between the pixel electrode 111 and the common electrode 113, and a leakage current between them.

[0322] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the organic layer can be formed.

[0323] In this specification and elsewhere, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0324] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. The insulating layer 125 is preferably formed by an ALD method because it has good coverage.

[0325] 16C , a resin layer 126 is provided between two adjacent light-emitting elements or between a light-emitting element and a light-receiving element so as to fill the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 126 can flatten the surfaces on which the organic layer 114, common electrode 113, etc. are formed, thereby preventing the common electrode 113 from being broken due to insufficient coverage of the step between adjacent light-emitting elements.

[0326] An insulating layer containing an organic material can be suitably used as the resin layer 126. For example, the resin layer 126 can be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Alternatively, the resin layer 126 can be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the resin layer 126 can be made of a photosensitive resin. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0327] Furthermore, by using a colored material (for example, a material containing a black pigment) for the resin layer 126, the layer may be given the function of blocking stray light from adjacent pixels and suppressing color mixing.

[0328] 16D, an insulating layer 125 and a resin layer 126 are provided on the insulating layer 125. The insulating layer 125 prevents the organic layer 112R and the like from coming into contact with the resin layer 126, thereby preventing impurities such as moisture contained in the resin layer 126 from diffusing into the organic layer 112R and the like, thereby making it possible to provide a highly reliable display device.

[0329] In addition, a reflective film (e.g., a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 125 and the resin layer 126, and a mechanism for improving the light extraction efficiency may be provided by reflecting the light emitted from the light-emitting layer with the reflective film.

[0330] 17A to 17C show an example in which the width of the pixel electrode 111 is larger than the width of the organic layer 112R, the organic layer 112B, or the common electrode 115. The organic layer 112R and the like are provided inside the end of the pixel electrode 111.

[0331] 17A shows an example in which an insulating layer 125 is provided. The insulating layer 125 is provided to cover the side surfaces of the organic layers of the light-emitting elements or light-receiving elements and part of the upper surface and side surfaces of the pixel electrodes 111.

[0332] 17B shows an example in which a resin layer 126 is provided. The resin layer 126 is located between two adjacent light-emitting elements or between a light-emitting element and a light-receiving element, and is provided so as to cover the side surfaces of the organic layer and the top and side surfaces of the pixel electrode 111.

[0333] 17C shows an example in which both an insulating layer 125 and a resin layer 126 are provided. The insulating layer 125 is provided between the organic layer 112R etc. and the resin layer 126.

[0334] 18A to 18E show examples in which the width of the pixel electrode 111 is smaller than the width of the organic layer 112R, the organic layer 112B, or the common electrode 115. The organic layer 112R and the like extend outward beyond the edge of the pixel electrode 111.

[0335] 18B shows an example having an insulating layer 125. The insulating layer 125 is provided in contact with the side surfaces of the organic layers of two adjacent light-emitting elements. Note that the insulating layer 125 may be provided to cover not only the side surfaces of the organic layer 112R etc. but also part of the upper surface.

[0336] 18C shows an example having a resin layer 126. The resin layer 126 is located between two adjacent light-emitting elements and is provided so as to cover part of the side and upper surfaces of the organic layer 112R, etc. Note that the resin layer 126 may be configured to contact the side surfaces of the organic layer 112R, etc., but not cover the upper surfaces.

[0337] 18D shows an example in which both the insulating layer 125 and the resin layer 126 are provided. The insulating layer 125 is provided between the organic layer 112R etc. and the resin layer 126.

[0338] Here, an example of the structure of the resin layer 126 will be described.

[0339] The flatter the upper surface of the resin layer 126, the better. However, depending on the irregularities of the surface on which the resin layer 126 is formed, the conditions under which the resin layer 126 is formed, and the like, the surface of the resin layer 126 may have a concave or convex shape.

[0340] 19A to 20F show enlarged views of an end portion of a pixel electrode 111R of a light emitting element 90R, an end portion of a pixel electrode 111G of a light emitting element 90G, and their vicinity. An organic layer 112G is provided on the pixel electrode 111G.

[0341] 19A, 19B, and 19C show enlarged views of the resin layer 126 and its vicinity when the upper surface of the resin layer 126 is flat. Fig. 19A shows an example where the width of the organic layer 112R etc. is larger than that of the pixel electrode 111. Fig. 19B shows an example where these widths are approximately the same. Fig. 19C shows an example where the width of the organic layer 112R etc. is smaller than that of the pixel electrode 111.

[0342] 19A , since the organic layer 112R is provided to cover the end of the pixel electrode 111, it is preferable that the end of the pixel electrode 111 has a tapered shape. This improves the step coverage of the organic layer 112R, resulting in a highly reliable display device.

[0343] 19D, 19E, and 19F show examples in which the upper surface of the resin layer 126 is concave. In this case, concave portions that reflect the concave upper surface of the resin layer 126 are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121.

[0344] 20A, 20B, and 20C show an example in which the upper surface of the resin layer 126 is convex. In this case, convex portions that reflect the convex upper surface of the resin layer 126 are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121.

[0345] 20D, 20E, and 20F show examples in which part of resin layer 126 covers the upper end and part of the upper surface of organic layer 112R and the upper end and part of the upper surface of organic layer 112G. In this case, insulating layer 125 is provided between resin layer 126 and the upper surface of organic layer 112R or organic layer 112G.

[0346] 20D, 20E, and 20F show an example in which a part of the upper surface of the resin layer 126 is concave. In this case, the organic layer 114, the common electrode 113, and the protective layer 121 are formed with concave and convex shapes that reflect the shape of the resin layer 126.

[0347] The above is a description of the configuration example of the resin layer.

[0348] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0349] In this embodiment, a structural example of a display device that can be used as a light-emitting and receiving device of one embodiment of the present invention will be described. Here, a display device that can display an image will be described, but the display device can also be used as a light-emitting and receiving device by using a light-emitting element as a light source.

[0350] Fig. 21A shows a schematic cross-sectional view of the display device 400. Fig. 21A shows an example of a cross section of the display device 400, when a part of a region including the FPC 472, a part of the display unit 462, and a part of a region including a connection portion are cut away. Fig. 21A shows an example of a cross section of the display unit 462, particularly when a region including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L) is cut away.

[0351] The display device 400 shown in FIG. 21A includes the transistor 260, the transistor 258, the light-emitting element 430b, the light-receiving element 440, and the like between a substrate 453 and a substrate 454.

[0352] The light-emitting element 430b and the light-receiving element 440 can be any of the light-emitting elements or light-receiving elements exemplified above.

[0353] Here, when a pixel of a display device has three types of subpixels having light-emitting elements that emit different colors, the three subpixels include subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). When a pixel of a display device has four subpixels, the four subpixels include subpixels of four colors: R, G, B, and white (W), or subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0354] The light receiving element 440 may be a photoelectric conversion element sensitive to light in the red, green, or blue wavelength range, or a photoelectric conversion element sensitive to light in the infrared wavelength range.

[0355] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided to overlap the light-emitting element 430b and the light-receiving element 440, respectively, and a solid sealing structure is applied to the display device 400. A light-shielding layer 417 is provided on the substrate 454.

[0356] The light-emitting element 430b and the light-receiving element 440 each have a conductive layer 411a, a conductive layer 411b, and a conductive layer 411c as pixel electrodes. The conductive layer 411b is reflective to visible light and functions as a reflective electrode. The conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0357] A conductive layer 411a included in the light-emitting element 430b is connected to a conductive layer 272b included in the transistor 260 through an opening provided in the insulating layer 264. The transistor 260 has a function of controlling driving of the light-emitting element. On the other hand, the conductive layer 411a included in the light-receiving element 440 is electrically connected to a conductive layer 272b included in the transistor 258. The transistor 258 has a function of controlling the timing of exposure using the light-receiving element 440, etc.

[0358] An EL layer 412G or a photoelectric conversion layer 412S is provided to cover the pixel electrode. An insulating layer 421 is provided in contact with the side surface of the EL layer 412G and the side surface of the photoelectric conversion layer 412S, and a resin layer 422 is provided to fill the recessed portion of the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided to cover the EL layer 412G and the photoelectric conversion layer 412S. By providing the protective layer 416 to cover the light-emitting element, impurities such as water can be prevented from entering the light-emitting element, thereby improving the reliability of the light-emitting element.

[0359] Light G emitted by the light-emitting element 430b is emitted toward the substrate 454. The light-receiving element 440 receives light L incident thereon through the substrate 454 and converts it into an electrical signal. The substrate 454 is preferably made of a material that is highly transparent to visible light.

[0360] The transistor 260 and the transistor 258 are both formed over a substrate 453. These transistors can be manufactured using the same material and through the same process.

[0361] Note that the transistor 260 and the transistor 258 may be fabricated to have different structures. For example, transistors may be fabricated with or without a back gate, or transistors may be fabricated with different materials and / or thicknesses of semiconductors, gate electrodes, gate insulating layers, source electrodes, and drain electrodes.

[0362] The substrate 453 and the insulating layer 262 are bonded together by an adhesive layer 455 .

[0363] In a method for manufacturing the display device 400, first, a formation substrate provided with the insulating layer 262, the transistors, the light-emitting elements, the light-receiving elements, and the like is bonded to a substrate 454 provided with a light-shielding layer 417 with an adhesive layer 442. Then, the formation substrate is peeled off, and a substrate 453 is attached to the exposed surface, so that the components formed on the formation substrate are transferred to the substrate 453. The substrate 453 and the substrate 454 each preferably have flexibility. This can increase the flexibility of the display device 400.

[0364] A connection portion 254 is provided in a region of the substrate 453 where the substrate 454 does not overlap. In the connection portion 254, the wiring 465 is electrically connected to the FPC 472 via a conductive layer 466 and a connection layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and the FPC 472 to be electrically connected via the connection layer 292.

[0365] The transistor 260 and the transistor 258 each include a conductive layer 271 functioning as a gate, an insulating layer 261 functioning as a gate insulating layer, a semiconductor layer 281 including a channel formation region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 functioning as a gate insulating layer, a conductive layer 273 functioning as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel formation region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel formation region 281i.

[0366] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n through an opening provided in the insulating layer 265. One of the conductive layer 272a and the conductive layer 272b functions as a source, and the other functions as a drain.

[0367] 21A shows an example in which the top surface and side surfaces of the semiconductor layer are covered with an insulating layer 275. The conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and the insulating layer 265, respectively.

[0368] 21B , the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281 but does not overlap with the low-resistance region 281n. For example, the insulating layer 275 is processed using the conductive layer 273 as a mask, thereby manufacturing the structure shown in FIG. 21B . In FIG. 21B , the insulating layer 265 is provided to cover the insulating layer 275 and the conductive layer 273, and the conductive layer 272a and the conductive layer 272b are connected to the low-resistance region 281n through openings in the insulating layer 265. Furthermore, an insulating layer 268 may be provided to cover the transistor.

[0369] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0370] The transistor 260 and the transistor 258 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0371] The crystallinity of a semiconductor material used for a semiconductor layer of a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0372] The semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0373] The band gap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more. Use of a metal oxide with a wide band gap can reduce the off-state current of the OS transistor.

[0374] The metal oxide preferably contains at least indium or zinc, and more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (wherein M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and more preferably gallium. Note that a metal oxide containing indium, M, and zinc may be referred to as In-M-Zn oxide hereinafter.

[0375] In particular, an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer of the transistor. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO) may be used for the semiconductor layer of the transistor. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (IAGZO) may be used for the semiconductor layer.

[0376] Furthermore, when the metal oxide is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of metal elements in such an In-M-Zn oxide may be a composition of In:M:Zn=1:1:1 or nearby, In:M:Zn=1:1:1.2 or nearby, In:M:Zn=1:3:2 or nearby, In:M:Zn=1:3:4 or nearby, In:M:Zn=2:1:3 or nearby, In:M:Zn=3:1:2 or nearby, In:M:Zn=4:2: Examples of suitable compositions include a composition in the range of In:M:Zn = 4:2:4.1 or a similar composition, a composition in the range of In:M:Zn = 5:1:3 or a similar composition, a composition in the range of In:M:Zn = 5:1:6 or a similar composition, a composition in the range of In:M:Zn = 5:1:7 or a similar composition, a composition in the range of In:M:Zn = 5:1:8 or a similar composition, a composition in the range of In:M:Zn = 6:1:6 or a similar composition, and a composition in the range of In:M:Zn = 5:2:5 or a similar composition. Note that a composition in the range includes a range of ±30% of the desired atomic ratio. Increasing the atomic ratio of indium in the metal oxide can increase the on-state current or field-effect mobility of the transistor.

[0377] For example, when describing a composition having an atomic ratio of In:Ga:Zn = 4:2:3 or thereabout, this includes a case where, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 5:1:6 or thereabout, this includes a case where, when the atomic ratio of In is 5, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 1:1:1 or thereabout, this includes a case where, when the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and 2 or less, and the atomic ratio of Zn is more than 0.1 and 2 or less.

[0378] Furthermore, the atomic ratio of In in the In-M-Zn oxide may be less than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxide include a composition of In:M:Zn = 1:3:2 or thereabouts, a composition of In:M:Zn = 1:3:3 or thereabouts, and a composition of In:M:Zn = 1:3:4 or thereabouts. Increasing the atomic ratio of M in the metal oxide can increase the band gap of the In-M-Zn oxide and improve its resistance to a negative bias stress test due to light irradiation. Specifically, the amount of change in threshold voltage or the amount of change in shift voltage (Vsh) measured in a negative bias temperature illumination stress (NBTIS) test of a transistor can be reduced. The shift voltage (Vsh) is defined as the Vg at which the tangent to the maximum slope of the drain current (Id)-gate voltage (Vg) curve of the transistor intersects with the line of Id=1 pA.

[0379] Alternatively, the semiconductor layer of the transistor may contain silicon, such as amorphous silicon or crystalline silicon (such as low-temperature polysilicon or single-crystal silicon).

[0380] Alternatively, the semiconductor layer of the transistor may include a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystal structure. A layered crystal structure is a structure in which layers formed by covalent bonds or ionic bonds are stacked via bonds weaker than covalent bonds or ionic bonds, such as van der Waals forces. A layered material has high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-state current can be provided.

[0381] Examples of the layered material include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogen (an element belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides that can be used as semiconductor layers of transistors include molybdenum sulfide (typically MoS ２ ), molybdenum selenide (typically MoSe ２ ), molybdenum telluride (typically MoTe ２ ), tungsten sulfide (typically WS ２ ), tungsten selenide (typically WSe ２ ), tungsten tellurium (typically WTe ２ ), hafnium sulfide (typically HfS ２ ), hafnium selenide (typically HfSe ２ ), zirconium sulfide (typically ZrS ２ ), zirconium selenide (typically ZrSe ２ ) etc.

[0382] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0383] It is preferable to use an inorganic insulating film for each of the insulating layers 261, 262, 265, 268, and 275. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above-described inorganic insulating films may be stacked.

[0384] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This makes it possible to prevent impurities from entering from the edge of the display device 400 through the organic insulating film. Alternatively, the organic insulating film may be formed so that the edge of the organic insulating film is located inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0385] An organic insulating film is suitable for the insulating layer 264 that functions as a planarizing layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0386] It is preferable to provide a light-shielding layer 417 on the surface of substrate 454 facing substrate 453. Various optical members can be arranged on the outside of substrate 454. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. The outside of substrate 454 may also be arranged with an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, an impact absorbing layer, or the like.

[0387] 21A shows a connection portion 278. The common electrode 413 and a wiring are electrically connected at the connection portion 278. In FIG. 21A, an example is shown in which the same layered structure as that of the pixel electrode is applied to the wiring.

[0388] The substrate 453 and the substrate 454 can each be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting element is extracted. When a flexible material is used for the substrate 453 and the substrate 454, the flexibility of the display device can be increased. Alternatively, a polarizing plate may be used for the substrate 453 or the substrate 454.

[0389] The substrates 453 and 454 may each be made of a polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), a polyacrylonitrile resin, an acrylic resin, a polyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, a polyethersulfone (PES) resin, a polyamide resin (nylon, aramid, etc.), a polysiloxane resin, a cycloolefin resin, a polystyrene resin, a polyamideimide resin, a polyurethane resin, a polyvinyl chloride resin, a polyvinylidene chloride resin, a polypropylene resin, a polytetrafluoroethylene (PTFE) resin, an ABS resin, or a cellulose nanofiber. One or both of the substrates 453 and 454 may be made of glass having a thickness sufficient to provide flexibility.

[0390] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0391] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0392] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic resin films.

[0393] Furthermore, when a film is used as a substrate, the film may absorb water, causing deformation such as wrinkles in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0394] The adhesive layer can be made of various curable adhesives, such as photocurable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets, etc., may also be used.

[0395] The connection layer 292 may be made of an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0396] Materials that can be used for conductive layers such as the gate, source, and drain of a transistor, as well as various wirings and electrodes that constitute a display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys containing these metals as main components, etc. Films containing these materials can be used as a single layer or a stacked layer structure.

[0397] Examples of light-transmitting conductive materials include conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metal materials, can be used. Alternatively, nitrides of such metal materials (e.g., titanium nitride) can be used. When using metal materials or alloy materials (or their nitrides), it is preferable to thin them sufficiently to ensure light-transmitting properties. A stacked film of the above materials can also be used as the conductive layer. For example, a stacked film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, and for conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting elements.

[0398] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0399] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0400] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0401] Embodiment 8 In this embodiment, an example in which a display device of one embodiment of the present invention is installed in a vehicle will be described with reference to FIGS. 22 and 23. FIG.

[0402] The display device shown in the first embodiment can be suitably used as the light emitting / receiving unit of the display device 61A shown in FIG. 22. The vehicle control device has a hemispherical shape and is fitted into a dashboard or the like for fixing. FIG. 22 also shows an example in which a display device 61B, which has a shape like a cylinder with a hemisphere of the same diameter mounted on one flat surface, is provided on the rear seat side. The display devices 61A and 61B can be configured to receive power or a video signal from below. The display devices 61A and 61B can also be used as interior lights.

[0403] 22 shows an example of a vehicle such as an electric car, but the present invention is not particularly limited to such vehicles, and display panels having a curved surface, typically a spherical or hemispherical shape, can be mounted on agricultural machinery, mopeds including electrically assisted bicycles, motorcycles, electric wheelchairs, electric carts, small or large ships, submarines, aircraft such as fixed-wing aircraft or rotary-wing aircraft, etc. Display panels having a curved surface, typically a spherical or hemispherical shape, can also be mounted on transportation vehicles such as buses, passenger planes, helicopters, and spacecraft.

[0404] The display device described in Embodiment Mode 1 can be used for the steering wheels shown in FIGS. 23A to 23F.

[0405] 23A has a configuration in which the display device 10A described in embodiment 1 is fitted in the center of the steering wheel 41A. The inclusion of the display device 10A allows the steering wheel 41A to be a steering wheel with excellent design.

[0406] 23B also illustrates an expanded view of each component of the display device 10A in the steering wheel 41A shown in FIG. 23A . As shown in FIG. 23B , the display device 10A of one embodiment of the present invention can have a configuration in which the display panel 11 is fixed in contact with the surface of the fixing member 20. Therefore, the driver can operate the display panel 11 and damage to the display panel 11 can be suppressed, resulting in a steering wheel having a highly convenient and reliable display device. Furthermore, an airbag can be housed in the housing 30. In this case, the display panel 11 also pops out when the airbag is deployed. However, since the display panel 11 has a non-rectangular flexible substrate, safety can be enhanced compared to a display panel having a glass substrate. Furthermore, since the display panel 11 is a combination of multiple display panels, the display panel 11 can be configured to disperse and fly apart when the airbag is deployed, thereby further enhancing safety.

[0407] 23C has a configuration in which the display device 10B described in Embodiment 1 is fitted in the center of the steering wheel 41B. The inclusion of the display device 10B allows the steering wheel 41B to be a steering wheel with excellent design.

[0408] 23D also illustrates an expanded view of each component of the display device 10B in the steering wheel 41B illustrated in FIG. 23C . As illustrated in FIG. 23D , the display device 10B of one embodiment of the present invention can have a configuration in which the display panels 11a and 11b are fixed in contact with the surface of the fixing member 20. This allows the driver to operate the display panels 11a and 11b, and damage to the display panels 11a and 11b can be suppressed, resulting in a steering wheel having a display device with excellent convenience and reliability. Furthermore, an airbag can be housed in the housing 30. In this case, the display panels 11a and 11b also pop out when the airbag is deployed. However, because the display panels 11a and 11b have non-rectangular flexible substrates, the display panels 11a and 11b can be configured to be safer than display panels having glass substrates. Furthermore, because the display panels 11a and 11b are configured by combining multiple display panels, the display panels 11a and 11b can be configured to disperse and fly apart when the airbag is deployed, resulting in a configuration with even higher safety.

[0409] 23E has a configuration in which the display device 10C described in Embodiment 1 is fitted in the center of the steering wheel 41C. The inclusion of the display device 10C allows the steering wheel 41C to be a steering wheel with excellent design.

[0410] 23F also illustrates an expanded view of each component of the display device 10C in the steering wheel 41C illustrated in FIG. 23E . As illustrated in FIG. 23F , the display device 10C of one embodiment of the present invention may have a configuration in which the display panel 11f is fixed in contact with the surface of the fixing member 20. This allows the driver to operate the display panel 11f and prevents damage to the display panel 11f, resulting in a steering wheel having a highly convenient and reliable display device. Furthermore, an airbag can be housed in the housing 30. In this case, the display panel 11f will also pop out when the airbag is deployed. However, since the display panel 11f has a non-rectangular flexible substrate, safety can be enhanced compared to display panels having glass substrates. Furthermore, since the display panel 11f is covered with the protective substrate 40, safety can be enhanced.

[0411] As described above, the structure of one embodiment of the present invention increases the degree of freedom in designing the display device, and the design, convenience, and reliability of the display device can be improved. In addition, the display device of one embodiment of the present invention can be suitably used when it is installed in a vehicle or the like.

[0412] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0413] <Additional Notes Regarding the Description of the Present Specification, etc.> The following additional notes are provided regarding the above-described embodiments and the explanations of the respective configurations in the embodiments.

[0414] The configurations shown in each embodiment can be combined with the configurations shown in other embodiments as appropriate to form one aspect of the present invention. In addition, when multiple configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate.

[0415] In addition, the content (or even a part of the content) described in one embodiment can be applied to, combined with, or replaced with another content (or even a part of the content) described in that embodiment, and / or the content (or even a part of the content) described in one or more other embodiments.

[0416] The contents described in the embodiments refer to the contents described in each embodiment using various figures or the contents described using text in the specification.

[0417] Furthermore, a figure (or even a part thereof) described in one embodiment can be combined with another part of that figure, another figure (or even a part thereof) described in that embodiment, and / or a figure (or even a part thereof) described in one or more other embodiments to form even more figures.

[0418] In addition, in the block diagrams in this specification, components are classified by function and shown as independent blocks. However, in actual circuits, it is difficult to separate components by function, and there may be cases where one circuit is involved in multiple functions, or where one function is involved across multiple circuits. Therefore, the blocks in the block diagrams are not limited to the components described in the specification, but may be rephrased appropriately depending on the situation.

[0419] In addition, in the drawings, the size, layer thickness, or region is shown at an arbitrary size for convenience of explanation. Therefore, it is not necessarily limited to the scale. Note that the drawings are shown schematically for clarity, and are not limited to the shapes or values ​​shown in the drawings. For example, it is possible to include variations in signal, voltage, or current due to noise, or variations in signal, voltage, or current due to timing deviations.

[0420] In this specification and the like, when describing the connection relationship of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. This is because the source and drain of a transistor vary depending on the structure or operating conditions of the transistor. Note that the source and drain of a transistor can be appropriately referred to as source (drain) terminal, source (drain) electrode, or the like depending on the situation.

[0421] Furthermore, the terms "electrode" and "wiring" used in this specification and elsewhere do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, the terms "electrode" and "wiring" also include cases where multiple "electrodes" and "wirings" are integrally formed.

[0422] Furthermore, in this specification and the like, the terms voltage and potential can be interchanged as appropriate. Voltage refers to the potential difference from a reference potential. For example, if the reference potential is a ground voltage (earth voltage), then voltage can be interchanged with potential. Ground potential does not necessarily mean 0 V. Note that potential is relative, and the potential applied to wiring, etc. may change depending on the reference potential.

[0423] In this specification and the like, terms such as "film" and "layer" can be interchangeable depending on the circumstances. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0424] In this specification, a switch refers to a device that has a function of controlling whether a current flows by being in a conductive state (on state) or a non-conductive state (off state), or a device that has a function of selecting and switching a path for a current to flow.

[0425] In this specification, the channel length refers to, for example, in a top view of a transistor, a region where a semiconductor (or a portion in the semiconductor through which current flows when the transistor is on) and a gate overlap, or a distance between a source and a drain in a region where a channel is formed.

[0426] In this specification, the channel width refers to, for example, the length of the region where the semiconductor (or the portion in the semiconductor through which current flows when the transistor is on) and the gate electrode overlap, or the length of the portion where the source and drain face each other in the region where the channel is formed.

[0427] In this specification, "A and B are connected" includes not only a direct connection between A and B, but also an electrical connection between A and B. Here, "A and B are electrically connected" means that when an object having some kind of electrical effect exists between A and B, transmission of an electrical signal between A and B is possible.

[0428] 10A: display device, 10B: display device, 10C: display device, 11a: display panel, 11b: display panel, 11c: display panel, 11f: display panel, 11p: display panel, 11q: display panel, 11: display panel, 12: FPC, 13: source driver circuit, 14: display section, 15: non-display section, 16: pixel, 17: gate driver circuit, 18: bent section, 19: notch section, 20: fixing member, 21: curved surface, 22: curved surface, 23: flat surface, 30: housing, 40: protective substrate

Claims

1. A steering wheel having a display device and an airbag, the display device includes a fixing member having a curved surface, a plurality of display panels that are flexible and fixed to the fixing member along the curved surface, and a housing having a function of accommodating the airbag and FPCs that each of the plurality of display panels has; Each of the plurality of display panels includes a display unit and a gate driver circuit; At least one transistor included in the gate driver circuit is disposed in a region surrounded by a plurality of pixel circuits included in the display unit. Steering wheel.

2. A steering wheel having a display device and an airbag, the display device includes a fixing member having a curved surface, a plurality of display panels that are flexible and fixed to the fixing member along the curved surface, and a housing having a function of accommodating the airbag and FPCs that each of the plurality of display panels has; Each of the plurality of display panels includes a display unit, a gate driver circuit, and a source driver circuit; a transistor included in the source driver circuit is not disposed in an area surrounded by a plurality of pixel circuits included in the display unit; At least one transistor included in the gate driver circuit is disposed in a region surrounded by a plurality of pixel circuits included in the display unit. Steering wheel.

3. A steering wheel having a display device and an airbag, the display device includes a fixing member having a flat surface and a curved surface, a first display panel that is flexible and fixed to the fixing member along the flat surface, a plurality of second display panels that are flexible and fixed to the fixing member along the curved surfaces, and a housing that has a function of housing the airbag and FPCs that each of the plurality of display panels has; each of the first display panel and the plurality of second display panels includes a display unit and a gate driver circuit; At least one transistor included in the gate driver circuit is disposed in a region surrounded by a plurality of pixel circuits included in the display unit. Steering wheel.

4. A steering wheel having a display device and an airbag, the display device includes a fixing member having a flat surface and a curved surface, a first display panel that is flexible and fixed to the fixing member along the flat surface, a plurality of second display panels that are flexible and fixed to the fixing member along the curved surfaces, and a housing that has a function of housing the airbag and FPCs that each of the plurality of display panels has; each of the first display panel and the plurality of second display panels includes a display unit, a gate driver circuit, and a source driver circuit; a transistor included in the source driver circuit is not disposed in an area surrounded by a plurality of pixel circuits included in the display unit; At least one transistor included in the gate driver circuit is disposed in a region surrounded by a plurality of pixel circuits included in the display unit. Steering wheel.

5. In any one of claims 1 to 4, The fixing member comprises plastic. Steering wheel.