Display apparatus

Abstract

Provided is a display apparatus that exhibits improved detection sensitivity of imaging function and has high display quality. This display apparatus comprises: a light reception device; a first light emission device that has a first lower electrode having a first tapered shape at an end part thereof, and a first organic compound layer having a shape conforming to the first tapered shape; a second light emission device that has a second lower electrode having a second tapered shape at an end part thereof, and a second organic compound layer having a shape conforming to the second tapered shape; a common electrode included in the first light emission device and the second light emission device; an insulation layer positioned between the first light emission device and the second light emission device, and between the second light emission device and the light reception device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring has a region positioned on the common electrode and overlapping the insulation layer.

Description

display device

[0001] One aspect of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the present invention disclosed in this specification and the like includes a semiconductor device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device, or an input / output device, and manufacturing methods thereof can also be given as examples.

[0003] In recent years, information terminal devices such as smartphones have been equipped with functions such as not only displaying images but also capturing images of fingerprints for authentication purposes. To provide the imaging function, a configuration has been proposed in which a light-receiving element and a light-emitting device are provided on the same substrate (see Patent Document 1).

[0004] Furthermore, display devices used in information terminal devices are required to have a high aperture ratio. To improve the aperture ratio, display devices with a top emission structure have been proposed (see Patent Document 2).

[0005] As a method for manufacturing an organic EL element that can be used in a display device, a method for manufacturing an organic optoelectronic device using standard UV photolithography has been disclosed (see Non-Patent Document 1).

[0006] International Publication No. 2021 / 038392 Japanese Patent Application Laid-Open No. 2012-182127

[0007] B. Lamprecht et al. , “Organic optoelectronic device fabrication using standard UV photolithography” phys. stat. sol. (RRL) 2, No. 1, p. 16-18 (2008)

[0008] In the above-mentioned Patent Document 1, a light-shielding layer provided on the opposing substrate is used as a countermeasure against stray light. However, the light-shielding layer provided on the opposing substrate may not be able to sufficiently suppress stray light, making it difficult to provide an imaging function with high detection sensitivity.

[0009] As disclosed in the above-mentioned Patent Document 2, a display device with a top-emission structure extracts light from a light-emitting device through a common electrode, so the common electrode must be transparent. However, using a transparent conductive material increases the resistance of the common electrode, which can cause a voltage drop. If a voltage drop occurs, the potential distribution within the display surface becomes uneven, resulting in a decrease in display quality.

[0010] With the method of Non-Patent Document 1, it is difficult to achieve high resolution in a display device.

[0011] In view of the above, an object of one embodiment of the present invention is to provide a display device having high detection sensitivity of an imaging function and a manufacturing method thereof.Another object of one embodiment of the present invention is to provide a display device having high display quality and a manufacturing method thereof.Another object of one embodiment of the present invention is to provide a high-resolution display device and a manufacturing method thereof.

[0012] Note that the description of these problems does not preclude the existence of other problems. Furthermore, these problems are considered to be independent of each other, and one embodiment of the present invention only needs to solve one of these problems, not all of them. Furthermore, problems other than these can be extracted from the description of the specification, drawings, and claims.

[0013] In view of the above-described problems, one embodiment of the present invention is a display device including: a first light-emitting device having a first lower electrode whose end portion has a first tapered shape and a first organic compound layer whose shape follows the first tapered shape; a second light-emitting device having a second lower electrode whose end portion has a second tapered shape and a second organic compound layer whose shape follows the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer positioned between the first light-emitting device and the second light-emitting device; and an auxiliary wiring electrically connected to the common electrode, wherein the auxiliary wiring is positioned over the common electrode and has a region overlapping with the insulating layer.

[0014] One embodiment of the present invention is a display device including: a light-receiving device; a first light-emitting device including a first lower electrode having an end portion with a first tapered shape and a first organic compound layer having a shape following the first tapered shape; a second light-emitting device including a second lower electrode having an end portion with a second tapered shape and a second organic compound layer having a shape following the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; insulating layers positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode, wherein the auxiliary wiring is positioned over the common electrode and has a region overlapping with the insulating layer.

[0015] One embodiment of the present invention is a display device including: a light-receiving device; a first light-emitting device including a first lower electrode having an end portion with a first tapered shape and a first organic compound layer having a shape following the first tapered shape; a second light-emitting device including a second lower electrode having an end portion with a second tapered shape and a second organic compound layer having a shape following the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; insulating layers positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode, wherein the auxiliary wiring is positioned over the common electrode and has a region provided to surround the light-receiving device.

[0016] One embodiment of the present invention is a display device including: a light-receiving device; a first light-emitting device including a first lower electrode whose end portion has a first tapered shape and a first organic compound layer whose shape follows the first tapered shape; a second light-emitting device including a second lower electrode whose end portion has a second tapered shape and a second organic compound layer whose shape follows the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; insulating layers positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode, wherein the auxiliary wiring is positioned over the common electrode and has a region provided between the first light-emitting device and the light-receiving device.

[0017] In one aspect of the present invention, the insulating layer preferably has a shape in which the center portion is raised higher than the end portions.

[0018] In one aspect of the present invention, the insulating layer preferably has a flat top profile.

[0019] According to one embodiment of the present invention, a display device having high detection sensitivity of an imaging function can be provided. According to another embodiment of the present invention, a display device having high display quality can be provided. According to another embodiment of the present invention, a high-resolution display device can be provided. Furthermore, according to another embodiment of the present invention, a manufacturing method of the display device or the like can be provided.

[0020] Note that the description of these effects does not preclude the existence of other effects. Furthermore, these effects are considered to be independent of each other, and one embodiment of the present invention may achieve any one of these effects, but need not achieve all of them. Furthermore, effects other than these may be extracted from the description in the specification, drawings, and claims.

[0021] FIGS. 1A to 1E are top views of a pixel portion. FIGS. 2A to 2C are cross-sectional views of the pixel portion. FIG. 3A is a top view of a pixel portion and a connecting portion, FIG. 3B is a cross-sectional view of the pixel portion, and FIG. 3C is a cross-sectional view of the connecting portion. FIGS. 4A to 4C are cross-sectional views of the pixel portion. FIGS. 5A to 5C are cross-sectional views of the pixel portion. FIGS. 6A and 6B are cross-sectional views of the pixel portion. FIGS. 7A to 7C are top views of the pixel portion, and FIG. 7D is a circuit diagram. FIGS. 8A to 8C are cross-sectional views for illustrating a method for manufacturing a display device. FIGS. 9A to 9C are cross-sectional views for illustrating a method for manufacturing a display device. FIGS. 10A to 10C are cross-sectional views for illustrating a method for manufacturing a display device. FIGS. 11A to 11C are cross-sectional views for illustrating a method for manufacturing a display device. FIGS. 12A to 12C are cross-sectional views for illustrating a method for manufacturing a display device. FIGS. 13A to 13C are cross-sectional views for illustrating a method for manufacturing a display device. FIG. 14 is a cross-sectional view for illustrating a method for manufacturing a display device. 15A to 15D are top views of a pixel portion. FIG. 16A is a top view of a pixel portion and a connecting portion, FIG. 16B is a cross-sectional view of the pixel portion, and FIG. 16C is a cross-sectional view of the connecting portion. FIGS. 17A to 17E are top views of a pixel portion. FIGS. 18A to 18E are top views of a pixel portion. FIGS. 19A to 19C are cross-sectional views for illustrating a manufacturing method of a display device. FIGS. 20A to 20C are cross-sectional views for illustrating a manufacturing method of a display device. FIGS. 21A and 21B are cross-sectional views for illustrating a manufacturing method of a display device. FIGS. 22A and 22B are cross-sectional views for illustrating a manufacturing method of a display device. FIG. 23A is a top view of a display device, and FIGS. 23B and 23C are perspective views of the display device. FIGS. 24A and 24B are perspective views of the display device. FIG. 25A is a block diagram of a display device, and FIGS. 25B to 25D are circuit diagrams. FIGS. 26A to 26D are cross-sectional views of transistors. Figures 27A to 27D are diagrams of electronic devices. Figures 28A and 28B are diagrams of electronic devices. Figures 29A and 29B are diagrams of electronic devices. Figures 30A and 30B are diagrams of electronic devices.

[0022] In this specification, the configuration may be classified by function and explained using block diagrams that are independent of each other, but in reality it is difficult to separate the configuration by function, and one configuration may be involved in multiple functions.

[0023] In this specification and the like, the names of the source and drain of a transistor are interchangeable depending on the polarity of the transistor and the level of the potential applied to each terminal. Generally, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In addition, in a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In practice, the names of the source and the drain may be interchangeable depending on the above-mentioned potential relationship. However, in this specification and the like, when describing the connection relationship of a transistor, the source and the drain are fixed for convenience.

[0024] In this specification, the source of a transistor refers to a source region that is part of a semiconductor layer that functions as an active layer, or a source electrode connected to the source region. Similarly, the drain of a transistor refers to a drain region that is part of the semiconductor layer, or a drain electrode connected to the drain region. Furthermore, the gate of a transistor refers to a gate electrode.

[0025] In this specification, a state in which transistors are connected in series means, for example, a state in which only one of the source or drain of a first transistor is connected to only one of the source or drain of a second transistor, and a state in which transistors are connected in parallel means a state in which one of the source or drain of a first transistor is connected to one of the source or drain of a second transistor, and the other of the source or drain of the first transistor is connected to the other of the source or drain of the second transistor.

[0026] In this specification, connection may be referred to as electrical connection, and includes a state in which a current, voltage, or potential can be supplied or transmitted. Therefore, it also includes a state in which things are connected to each other via elements such as wiring, resistors, diodes, and transistors. Electrical connection also includes a state in which things are directly connected to each other without using elements such as wiring, resistors, diodes, and transistors.

[0027] In this specification and the like, the source and drain of a transistor are sometimes described using a first electrode and a second electrode; however, when one of the first electrode and the second electrode is the source, the other is the drain.

[0028] In this specification and the like, a conductive layer may have multiple functions such as wiring or an electrode.

[0029] In this specification and the like, a light-emitting device may be referred to as a light-emitting element. A light-emitting device has a structure in which an organic compound layer is sandwiched between a pair of electrodes. One of the pair of electrodes is an anode, the other of the pair of electrodes is a cathode, and at least one of the organic compound layers is a light-emitting layer.

[0030] In this specification and the like, a light-emitting device having an organic compound layer formed using a metal mask (MM) may be referred to as a light-emitting device having a metal mask structure.

[0031] In this specification and the like, the metal mask may be referred to as a fine metal mask (FMM, high-definition metal mask) in accordance with the miniaturization of the openings.

[0032] In this specification and the like, a light-emitting device having an organic compound layer formed without using a metal mask or a fine metal mask may be referred to as a light-emitting device having a metal maskless (MML) structure.

[0033] In this specification and the like, light-emitting devices that emit red, green, blue, etc. may be referred to as a red light-emitting device, a green light-emitting device, and a blue light-emitting device, respectively.

[0034] In this specification, a structure in which light-emitting layers are fabricated separately for each color light-emitting device may be referred to as an SBS (Side By Side) structure. For example, a full-color display device can be provided by fabricating a red light-emitting device, a green light-emitting device, and a blue light-emitting device using the SBS structure.

[0035] In this specification and the like, a light-emitting device that emits white light may be referred to as a white light-emitting device. Note that a white light-emitting device can provide a full-color display device by combining it with a colored layer (for example, a color filter or a color conversion layer).

[0036] Light-emitting devices can be broadly classified into a single structure and a tandem structure. A single structure has one light-emitting unit between a pair of electrodes. The light-emitting unit is a laminate including one or more light-emitting layers.

[0037] To obtain a white light-emitting device using a single structure, it is sufficient that the light-emitting unit has two or more light-emitting layers, and the light emitted from the two or more light-emitting layers is recognized as white. The two or more light-emitting layers may be in contact with each other in the light-emitting unit. Furthermore, even in a light-emitting unit having three or more light-emitting layers, a white light-emitting device can be obtained by providing light emitted from the light-emitting layers with a complementary color relationship. The three or more light-emitting layers may be in contact with each other in the light-emitting unit.

[0038] A tandem structure is a structure having two or more light-emitting units between a pair of electrodes. Each of the two or more light-emitting units refers to a laminate including one or more light-emitting layers. In a tandem structure, it is preferable to provide an intermediate layer such as a charge generation layer between the multiple light-emitting units. Note that the charge generation layer has the function of injecting holes into the light-emitting unit formed in contact with the charge generation layer and the function of injecting electrons into the other light-emitting unit when a voltage is applied between the cathode and the anode. For example, a tandem structure is preferably a structure having a first light-emitting unit, a charge generation layer, and a second light-emitting unit between a pair of electrodes, and it is preferable that the charge generation layer injects holes into the first light-emitting unit and injects electrons into the second light-emitting unit.

[0039] To obtain a white light-emitting device using a tandem structure, light from the light-emitting layers of two or more light-emitting units can be combined to produce white light. Note that the combination of light-emitting layers that produces white light should satisfy a complementary color relationship, as in the case of a single structure.

[0040] Furthermore, when the above-described white light-emitting devices (single structure and tandem structure) are compared with light-emitting devices having an SBS structure, the light-emitting devices having an SBS structure can reduce power consumption compared to the white light-emitting devices (single structure and tandem structure). When it is desired to reduce power consumption, it is preferable to use a light-emitting device having an SBS structure. On the other hand, the white light-emitting devices (single structure and tandem structure) are preferable because the manufacturing process is simpler than that of light-emitting devices having an SBS structure, thereby enabling lower manufacturing costs or higher manufacturing yields.

[0041] In this specification and the like, a display panel having a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) attached to a substrate, or a display panel having an IC mounted on a substrate by a chip-on-glass (COG) method or the like, may be referred to as a display module. A display module is one aspect of a display device.

[0042] Next, embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0043] Embodiment 1 In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described.

[0044] <Auxiliary Wiring> A display device according to one embodiment of the present invention preferably includes an auxiliary wiring in a pixel portion. In this specification and the like, the term "auxiliary wiring" refers to a layer having an auxiliary function for a main electrode. In addition, in this specification and the like, an example of the "auxiliary function" is a function to suppress a voltage drop that may occur in the main electrode.

[0045] In this specification, an example of a "main electrode" is one of a pair of electrodes of a light-emitting device provided in a pixel portion. Since one of the pair of electrodes of the light-emitting device functions as either a cathode or an anode of the light-emitting device, the conductive material used for one of the pair of electrodes of the light-emitting device has a work function suitable for a cathode or an anode. Therefore, the conductive material used for one of the pair of electrodes of the light-emitting device may have a high resistivity.

[0046] Furthermore, the light-emitting device has an upper electrode as one of a pair of electrodes, and this upper electrode is continuous and not separated between multiple light-emitting devices. This continuous electrode is referred to as a "common electrode" in this specification, and as display devices become larger, the area that the common electrode must be formed on increases, making it more likely that a difference will occur between the voltage applied to the edge of the common electrode and the voltage applied to the center of the common electrode. A specific example of a "voltage drop" in the explanation of the auxiliary wiring above is the difference in voltage, and a specific example of a "main electrode" is the common electrode.

[0047] In order to suppress the "voltage drop," in a display device according to one embodiment of the present invention, the auxiliary wiring is electrically connected to the common electrode. By electrically connecting the auxiliary wiring to the common electrode, the voltage drop is suppressed more than when the auxiliary wiring is not electrically connected to the common electrode. Therefore, the auxiliary function of the auxiliary wiring can be said to be a function of suppressing the voltage drop that may occur in the common electrode.

[0048] Although the auxiliary wiring may be referred to as an auxiliary electrode according to its shape, in this specification and the like, the auxiliary wiring may have any shape as long as it has a function of suppressing a voltage drop that may occur in the common electrode. Note that in this specification and the like, one embodiment of the present invention will be described using the auxiliary wiring.

[0049] Examples of conductive materials used for the auxiliary wiring include metals such as aluminum, copper, silver, gold, platinum, chromium, and molybdenum. Alloys of the above metals can also be used as the conductive material. The above metals and metal alloys are preferable because they have low resistivity. Specifically, metals and metal alloys can have lower conductivity than conductive materials used for the common electrode. Using such conductive materials, the auxiliary wiring can have a single-layer structure or a multilayer structure. In the case of a multilayer structure, the above-described conductive material may be used in at least one layer. The above-described conductive materials are metals and metal alloys, and are non-transparent conductive materials. However, even when used as auxiliary wiring, the performance of the display device is not degraded. In other words, unlike the common electrode, the auxiliary wiring has a high degree of freedom in terms of arrangement and shape, and can therefore be arranged or shaped in a way that does not degrade the performance of the display device. The method for manufacturing the auxiliary wiring using the above-described conductive materials is not limited in any way.

[0050] Needless to say, a light-transmitting conductive material may be used as the conductive material for the auxiliary wiring. Specifically, examples of the light-transmitting conductive material include an oxide containing indium and tin (indium tin oxide, also referred to as In—Sn oxide, or ITO), an oxide containing indium, silicon, and tin (In—Si—Sn oxide, also referred to as ITSO), an oxide containing indium and zinc (indium zinc oxide, also referred to as In—Zn oxide), and an oxide containing indium, tungsten, and zinc (In—W—Zn oxide). Using such a conductive material, the auxiliary wiring can have a single-layer structure or a stacked-layer structure. When a stacked-layer structure is used, the above-described conductive material may be used for at least one layer. Since the above-described conductive material is a light-transmitting conductive material, the performance of the display device is not degraded even when the auxiliary wiring is used. As described above, unlike the common electrode, the auxiliary wiring has a high degree of freedom in terms of arrangement and shape. Therefore, even when a light-transmitting conductive material is used, the auxiliary wiring may be arranged or shaped in a manner that does not degrade the performance of the display device. The method for producing the auxiliary wiring using the conductive material is not limited in any way.

[0051] The auxiliary wiring may be made of an organic material such as a conductive polymer, or an inorganic material such as carbon black. Conductive polymers and carbon black can exhibit conductivity. Using an organic material such as a conductive polymer can increase the height of the auxiliary wiring in a cross-sectional view. Using such materials, the auxiliary wiring can have a single-layer structure or a multilayer structure. When a multilayer structure is used, the above-mentioned material may be used for at least one layer. There are no particular limitations on the method for manufacturing the auxiliary wiring using the above-mentioned materials.

[0052] It is preferable that the resistivity of the conductive material used for the auxiliary wiring be lower than the resistivity of the conductive material used for the common electrode. However, because there is a high degree of freedom in the arrangement or shape of the auxiliary wiring, the voltage drop can be sufficiently suppressed by increasing the thickness of the auxiliary wiring in a cross-sectional view, i.e., by increasing its height. Also, the voltage drop can be sufficiently suppressed by increasing the area of ​​the auxiliary wiring in a top view (hereinafter referred to as a plan view). In these cases, the above resistivity relationship does not need to be satisfied.

[0053] <Top-Emission Structure> A display device according to one embodiment of the present invention preferably has a top-emission structure. In a top-emission structure, the electrode located on the light-emitting side of a pair of electrodes of a light-emitting device must be light-transmitting. In this specification and the like, "light-transmitting" refers to the passage of at least visible light (light with a wavelength of 400 nm or more and less than 750 nm) and preferably has a transmittance of 40% or more. Furthermore, using the electrode as a common electrode simplifies the manufacturing method and improves the yield of the display device, which is preferable. Taking these factors into consideration, a light-transmitting common electrode can be obtained by using Structure A, in which the common electrode is formed using a light-transmitting conductive material, or Structure B, in which a thin film of a non-light-transmitting conductive material is used as the common electrode. However, as in Structure A, a light-transmitting conductive material may have high resistivity, which may cause a voltage drop. Furthermore, a thin film, as in Structure B, may also increase the resistance of the common electrode, which may cause a voltage drop. A voltage drop in the common electrode may result in an uneven potential distribution within the pixel portion of the display device, i.e., within the display surface, resulting in variations in the luminance of the light-emitting device. The variation in luminance leads to a decrease in display quality. In this manner, when the display device according to one embodiment of the present invention has a top-emission structure, the auxiliary wiring according to one embodiment of the present invention exhibits a significant effect.

[0054] Note that even when the display device according to one embodiment of the present invention has a bottom emission structure, it goes without saying that the effect of suppressing a voltage drop can be achieved by including an auxiliary wiring electrically connected to the common electrode.

[0055] <Imaging Function> A display device according to one embodiment of the present invention can have an imaging function by including a light-receiving device (also referred to as a light-receiving element) in a pixel portion. A structure in which the light-receiving device is provided in the pixel portion can reduce the number of components and achieve cost reduction or size reduction of the display device, which is preferable compared to a structure in which the light-receiving device is provided outside the display device.

[0056] To increase the detection sensitivity in the imaging function, it is preferable to have a configuration in which only detection light is received. As described above, when a light-receiving device is provided in the pixel section, the distance between the light-receiving device and the light-emitting device is shorter than when the light-receiving device is provided externally, and the light-receiving device may receive part of the light emitted from the light-emitting device. Note that the part of light refers to light reflected or scattered at the interfaces of each layer through which the light emitted from the light-emitting device passes, and this is referred to as "stray light" in this specification.

[0057] In a display device according to one embodiment of the present invention, the auxiliary wiring can prevent the light-receiving device from receiving stray light. In this specification and the like, this is sometimes referred to as "stray light suppression." Examples of structures that enhance the effect of stray light suppression using the auxiliary wiring include structure C in which the auxiliary wiring is positioned between the light-receiving device and the light-emitting device, and structure D in which the auxiliary wiring is positioned so as to surround the light-receiving device. As an example of the shape of the auxiliary wiring that further enhances the effect of stray light suppression, an auxiliary wiring having a large height in cross-sectional view is preferably used. Furthermore, to further enhance stray light suppression, a material that is conductive and can reflect or absorb stray light is preferably used for the auxiliary wiring. To reflect stray light, a metal material is preferably used for the auxiliary wiring. To absorb stray light, a material that exhibits a black color, such as carbon black, is preferably used for the auxiliary wiring.

[0058] In this specification and the like, when it is sufficient for the display device to only have the effect of suppressing stray light and there is no need to suppress voltage drop, the auxiliary wiring described above is called a "light shield," and an insulating material can be used. The light shield can be positioned between the light receiving device and the light emitting device, as in configuration C, or can be positioned so as to surround the light receiving device, as in configuration D. The light shield should also have a large height in cross section. Furthermore, the light shield should be made of a material that reflects or absorbs stray light.

[0059] Based on the above description, a specific example of the display device according to one embodiment of the present invention will be described.

[0060] 1A to 1E are top views of a pixel portion 103 of a display device. In each of FIGS. 1A to 1E, an X direction and a Y direction intersecting the X direction are shown, and the configuration of the pixel portion 103 will be described using these directions.

[0061] The pixel unit 103 is located in the display region and includes a plurality of pixels 150. The display device may include a protection circuit and / or a drive circuit in addition to the pixel unit 103. The pixel 150 includes at least sub-pixels 110R, 110G, and 110B. The sub-pixels 110R, 110G, and 110B correspond to the light-emitting regions of the respective light-emitting devices. For example, the sub-pixel 110R corresponds to the light-emitting region of a red (sometimes referred to as R) light-emitting device, the sub-pixel 110G corresponds to the light-emitting region of a green (sometimes referred to as G) light-emitting device, and the sub-pixel 110B corresponds to the light-emitting region of a blue (sometimes referred to as B) light-emitting device.

[0062] Note that the light-emitting colors of the display device of one embodiment of the present invention are not limited to the above; for example, the display device may have a white light-emitting region in addition to red, green, and blue light-emitting regions.

[0063] The sub-pixels 110R, 110G, and 110B may be arranged in a matrix (referred to as a matrix array). A matrix array is a regular array, and multiple sub-pixels 110R, 110G, and 110B are arranged throughout the pixel unit 103 according to the regular array shown in the pixel 150.

[0064] A display device according to an embodiment of the present invention can display full color by including at least the subpixels 110R, 110G, and 110B. Furthermore, in this embodiment, the display device also includes a light receiving section 110S. Therefore, in this specification, a group of the subpixels 110R, 110G, and 110B plus the light receiving section 110S is referred to as a pixel 150. In other words, in this specification, a pixel is used as the "smallest unit enabling full color display," and therefore the pixel includes at least subpixels corresponding to each color, and may further include at least a light receiving section in addition to the subpixels. However, the light receiving section 110S does not need to be provided in every pixel 150. For example, the light receiving section 110S may be provided in a ratio such that one light receiving section is provided for each plurality of pixels 150. Therefore, a pixel 150 may not include a light receiving section 110S. By providing light receiving sections provided in a ratio such that one light receiving section is provided for each plurality of pixels 150, the display device according to an embodiment of the present invention can have an imaging function.

[0065] In this specification and the like, when describing matters common to the subpixels 110R, 110G, and 110B, they will be referred to as the subpixel 110. The subpixel 110 includes a light-emitting device that emits one light color and a switching element that controls the light-emitting device. The display device can perform full-color display by emitting light from the light-emitting device controlled by the switching element. To perform full-color display, the subpixels 110R, 110G, and 110B may each have a colored layer, such as a color filter or a color conversion layer. In the top views shown in Figures 1A to 1E, the colored layers may be considered to overlap the regions labeled RGB.

[0066] The light receiving unit 110S has a light receiving device. The light receiving unit 110S also has a switching element that controls the light receiving device. The light receiving device controlled by the switching element has the function of receiving light from a light source and can convert the received light into an electrical signal. Therefore, the light receiving device may be referred to as a photoelectric conversion device. Visible light or infrared light can be used as the light source of the light receiving device. In the case of visible light, the wavelength of the light is not particularly limited, and examples include light with wavelengths such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. It is preferable that the light receiving device be able to receive one or more lights selected from the light described above as visible light.

[0067] Furthermore, it is preferable that the light emitted from each sub-pixel be used as a light source so that the light receiving device can receive the light emitted from each sub-pixel. In this case, it is preferable that a new light source is not required. One type of light emitted from each sub-pixel is green (typical wavelength: 480 nm to 560 nm), and this green color is preferable because it corresponds to a wavelength at which the light receiving device has high detection sensitivity.

[0068] The arrangement of the auxiliary wiring 151 and the like will be described using Fig. 1A. The pixel 150 in Fig. 1A has a subpixel 110R, a subpixel 110B adjacent to the subpixel 110R in the X direction, a subpixel 110G adjacent to the subpixel 110R in the Y direction, and a light receiving portion 110S adjacent to the subpixel 110B in the Y direction.

[0069] The auxiliary wiring 151 shown in FIG. 1A is provided in a region that does not overlap with the subpixels 110R, 110G, and 110B, and the light receiving portion 110S, and has a lattice shape in a plan view. The lattice is a pattern that combines a plurality of parallel vertical lines and a plurality of parallel horizontal lines. The auxiliary wiring 151 in FIG. 1A has regions of horizontal lines that extend along the X direction, and these regions are parallel to each other, and also has regions of vertical lines that extend along the Y direction, and these regions are parallel to each other.

[0070] 1A is located between the subpixels 110R and 110G as a region extending along the X direction, and these regions are arranged in parallel with a gap of the subpixels. The auxiliary wiring 151 shown in FIG. 1A is located between the subpixels 110R and 110B as a region extending along the Y direction, and these regions are arranged in parallel with a gap of the subpixels.

[0071] 1A is electrically connected to the auxiliary wiring 151 shown in FIG. 1A, thereby suppressing a voltage drop caused by the common electrode. Furthermore, the auxiliary wiring 151 shown in FIG. 1A is arranged so as to surround the light receiving unit 110S, thereby suppressing stray light. Note that if only the stray light suppression effect is to be achieved, the auxiliary wiring may be replaced with a light shielding body, and the arrangement of the light shielding body can be understood by referring to FIG. 1A.

[0072] Next, auxiliary wiring having a different arrangement from that in FIG. 1A will be described using FIG. 1B. FIG. 1B shows a pixel 150 having the same arrangement as that in FIG. 1A. The auxiliary wiring 151 shown in FIG. 1B is provided so as to surround, in order, the sub-pixels 110R and the light receiving section 110S, which are arranged diagonally in the pixel section 103. The auxiliary wiring 151 shown in FIG. 1B has a region extending along the X direction and a region extending along the Y direction, and these regions can be interpreted in the same way as in FIG. 1A based on FIG. 1B. However, the auxiliary wiring in FIG. 1B has a smaller region than the auxiliary wiring in FIG. 1A.

[0073] 1B is electrically connected to the auxiliary wiring 151 shown in FIG. 1B, thereby suppressing a voltage drop caused by the common electrode. Furthermore, the auxiliary wiring 151 shown in FIG. 1B is arranged so as to surround the light receiving unit 110S, thereby suppressing stray light. Note that if only the stray light suppression effect is to be achieved, the auxiliary wiring may be replaced with a light shielding body, and the arrangement of the light shielding body can be understood by referring to FIG. 1B.

[0074] Next, auxiliary wiring having a different arrangement from those in FIGS. 1A and 1B will be described using FIG. 1C. FIG. 1C shows pixels 150 arranged in the same manner as in FIG. 1A. The auxiliary wiring 151 shown in FIG. 1C is arranged to surround at least the light receiving section 110S. The auxiliary wiring 151 shown in FIG. 1C has a region extending along the X direction and a region extending along the Y direction, and these regions can be interpreted in the same way as in FIG. 1A based on FIG. 1C. However, the auxiliary wiring in FIG. 1C has a smaller region than the auxiliary wiring in FIG. 1A.

[0075] 1C is electrically connected to the auxiliary wiring 151 shown in FIG. 1C, thereby suppressing a voltage drop caused by the common electrode. Furthermore, the auxiliary wiring 151 shown in FIG. 1C is arranged so as to surround the light receiving unit 110S, thereby suppressing stray light. Note that if only the stray light suppression effect is to be achieved, the auxiliary wiring may be replaced with a light shielding body, and the arrangement of the light shielding body can be understood by referring to FIG. 1C.

[0076] Next, auxiliary wiring having a different arrangement from those in FIGS. 1A to 1C will be described using FIG. 1D. FIG. 1D shows a pixel 150 having the same arrangement as that in FIG. 1A. The auxiliary wiring 151 shown in FIG. 1D is provided at least between the light receiving section 110S and the subpixel 110G. The auxiliary wiring 151 shown in FIG. 1D has a region extending along the Y direction, and this region can be read from the drawing in the same way as in FIG. 1A. However, the auxiliary wiring in FIG. 1D has a smaller region than the auxiliary wiring in FIG. 1A.

[0077] 1D is electrically connected to the auxiliary wiring 151 shown in Fig. 1D, thereby suppressing a voltage drop caused by the common electrode. Furthermore, the auxiliary wiring 151 shown in Fig. 1D is disposed between the light receiving unit 110S and the subpixel 110G, thereby achieving a stray light suppression effect. Note that, when only the stray light suppression effect is to be achieved, the auxiliary wiring may be replaced with a light shielding body, and the placement of the light shielding body can also be understood by referring to Fig. 1D.

[0078] Next, auxiliary wiring having a different arrangement from those in FIGS. 1A to 1D will be described using FIG. 1E. FIG. 1E shows a pixel 150 having the same arrangement as that in FIG. 1A. The auxiliary wiring 151 shown in FIG. 1E is provided at least between the light receiving section 110S and the subpixel 110B. The auxiliary wiring 151 shown in FIG. 1E has an area extending along the X direction, and this area can be read from the drawing in the same way as in FIG. 1A. However, the auxiliary wiring in FIG. 1E has a smaller area than the auxiliary wiring in FIG. 1A.

[0079] 1E, the common electrode (not shown) is electrically connected to the auxiliary wiring 151 shown in Fig. 1E, thereby suppressing the voltage drop caused by the common electrode. Furthermore, the auxiliary wiring 151 shown in Fig. 1E is disposed between the light receiving unit 110S and the subpixel 110B, thereby achieving a stray light suppression effect. Note that, when only the stray light suppression effect is to be achieved, the auxiliary wiring may be replaced with a light shielding body, and the placement of the light shielding body can also be understood by referring to Fig. 1E.

[0080] 1A to 1E are commonly arranged in a position that does not reduce the aperture ratio or the like and is located at least near the light receiving section 110S. The auxiliary wiring 151 shown in FIGS. 1A to 1E can suppress both voltage drop and stray light.

[0081] 1A to 1E , the auxiliary wiring 151 is not limited to the arrangement shown in Fig. 1A to 1E because the aperture ratio and the like are not reduced even when the auxiliary wiring 151 overlaps with the subpixel and the light-receiving portion 110S. However, since it is difficult to suppress stray light when a conductive material having light transmission is used for the auxiliary wiring 151, in order to simultaneously suppress both the voltage drop and the stray light, a conductive material having light transmission and the auxiliary wiring 151 shown in Fig. 1A to 1E may be combined and used as an auxiliary wiring having a stacked structure.

[0082] <Example of Cross-Sectional Structure of Auxiliary Wiring> Next, the cross-sectional structure of the auxiliary wiring 151 and the like will be described. Figures 2A to 2C show cross-sectional views corresponding to the dashed dotted line A1-A2 shown in Figure 1A. Note that the cross-sectional structure of the auxiliary wiring 151 shown in Figures 2A to 2C can also be applied to the cross-sectional structures of the auxiliary wiring 151 and the like shown in Figures 1B to 1E.

[0083] As shown in Fig. 2A , a light-emitting device is located on a substrate 101. For example, a light-emitting device 11R corresponding to a sub-pixel 110R is located on the substrate 101. Specifically, a lower electrode 111R of the light-emitting device 11R is located on the substrate 101, an organic compound layer 112R of the light-emitting device 11R is located on the lower electrode 111R, and a common electrode 113 is located on the organic compound layer 112R. The light-emitting device 11R can emit light toward the common electrode 113, that is, in the direction indicated by the arrow in Fig. 2A .

[0084] Similarly, the light-emitting device 11G is located corresponding to the subpixel 110G. Specifically, a lower electrode 111G of the light-emitting device 11G is located on the substrate 101, an organic compound layer 112G of the light-emitting device 11G is located on the lower electrode 111G, and a common electrode 113 is located on the organic compound layer 112G. The light-emitting device 11G can emit light toward the common electrode 113, that is, in the direction indicated by the arrow in FIG. 2A .

[0085] 2A , the light-emitting device 11B is located corresponding to the subpixel 110B. Specifically, a lower electrode 111B of the light-emitting device 11B is located on the substrate 101, an organic compound layer 112B of the light-emitting device 11B is located on the lower electrode 111B, and a common electrode 113 is located on the organic compound layer 112B. The light-emitting device 11B can emit light toward the common electrode 113.

[0086] When describing matters common to the light-emitting device 11R, the light-emitting device 11G, and the light-emitting device 11B, they may be referred to as the light-emitting device 11.

[0087] When describing matters common to the organic compound layer 112R, the organic compound layer 112G, and the organic compound layer 112B, they may be referred to as the organic compound layer 112.

[0088] 2A, a light-receiving device 11S is located corresponding to the light-receiving section 110S. Specifically, a lower electrode 111S of the light-receiving device 11S is located on the substrate 101, an active layer 112S of the light-receiving device 11S is located on the lower electrode 111S, and a common electrode 113 is located on the active layer 112S. The light-receiving device 11S can receive light as indicated by the arrow in FIG. 2A.

[0089] The common electrode 113 is a common layer shared by each light-emitting device. In FIG. 2A, the light-receiving device 11S also has the common electrode 113.

[0090] When the lower electrode 111R, the lower electrode 111G, the lower electrode 111B, and the lower electrode 111S are not to be distinguished from one another, they may be referred to as the lower electrodes 111.

[0091] When a top emission structure is applied to a display device according to one embodiment of the present invention, it is desirable that the common electrode 113 have high visible light transmittance. Specifically, the common electrode 113 is required to transmit 40% or more of visible light.

[0092] Note that the lower electrode 111 may transmit 40% or more of visible light. In this case, the display device according to one embodiment of the present invention becomes a bottom emission type. Even in a bottom emission type display device, a voltage drop can be suppressed by providing an auxiliary wiring.

[0093] Furthermore, when a material that transmits 40% or more of visible light is applied to the lower electrode 111 together with the common electrode 113, the display device according to one embodiment of the present invention becomes a dual-emission display device that emits light in both directions, that is, above and below the substrate 101. A dual-emission display device can be referred to as a transparent display. Even in a dual-emission display device, voltage drop can be suppressed by providing auxiliary wiring.

[0094] In a top emission structure, stray light from the light emitting device is often caused by scattering or reflection in layers above the common electrode 113. Therefore, in order to suppress stray light, it is preferable to provide auxiliary wiring 151 on the common electrode 113, as shown in Fig. 2A. As explained in Fig. 1A and other figures, in order to obtain the effect of not reducing the aperture ratio of the display device, the auxiliary wiring 151 is located on the common electrode 113 in an area that does not overlap with the light emitting device and the light receiving device.

[0095] 2A , an insulating layer 126 is preferably positioned between each light-emitting device and between the light-emitting device and the light-receiving device. In this case, the auxiliary wiring 151 may be positioned so as to overlap the insulating layer 126. The insulating layer 126 can separate the organic compound layers of each light-emitting device, thereby suppressing crosstalk between the light-emitting devices.

[0096] 2A, the top surface of the insulating layer 126 is shown to be approximately aligned or aligned with the top surface of the organic compound layer 112. When such a positional relationship is satisfied, the common electrode 113 is not cut, which is preferable.

[0097] 2A, in order to prevent the common electrode 113 from being cut, the top surface of the insulating layer 126 may be located above the top surface of the organic compound layer 112. In this case, it is preferable that the end portion of the insulating layer 126 gradually becomes thinner toward the center of the organic compound layer 112. A shape in which the thickness gradually becomes thinner is sometimes referred to as a tapered shape.

[0098] 2A, it is more preferable that the center of the insulating layer 126 is located above the ends of the insulating layer 126 and that the center has a region that is raised higher than the ends. If the common electrode 113 is provided on such an insulating layer 126, the common electrode 113 is prevented from being cut off.

[0099] In FIG. 2A, the auxiliary wiring 151 has a region in contact with the upper surface of the common electrode 113, and if the auxiliary wiring 151 can ensure electrical connection with the common electrode 113, the voltage drop can be suppressed.

[0100] <Light-Receiving Device> The light-receiving device 11S shown in FIG. 2A can detect light emitted from each light-emitting device 11. In this case, the detection light is visible light. The sensitivity of the light-receiving device 11S is high and is preferably achieved by using green visible light (typical wavelength: 480 nm to 560 nm). Therefore, it is preferable to arrange the light-receiving device 11S adjacent to the light-emitting device 11G. On the other hand, if light from the light-emitting device 11G becomes stray light and is received by the light-receiving device 11S, the detection sensitivity decreases. Therefore, it is preferable to position the auxiliary wiring 151 at least in the region between the light-receiving device 11S and the light-emitting device 11G, which is the light-emitting device that emits the detection light. The auxiliary wiring 151 can suppress voltage drops due to the common electrode 113 while also suppressing stray light.

[0101] Next, an auxiliary wiring having a cross-sectional structure different from that of FIG. 2A will be described with reference to FIG. 2B . FIG. 2B shows an auxiliary wiring 151 having a stacked structure. The first auxiliary wiring 151a corresponding to the lower layer of the stacked structure can be provided in the same manner as the auxiliary wiring 151 of FIG. 2A . The second auxiliary wiring 151b located on the first auxiliary wiring 151a may be made of a light-transmitting conductive material. The second auxiliary wiring 151b may be provided so as to have a region overlapping with the light-emitting device. Because the light-transmitting conductive material may have high resistivity, the film thickness of the second auxiliary wiring 151b may be thicker than that of the first auxiliary wiring 151a. The auxiliary wiring 151 having a stacked structure suppresses a voltage drop caused by the common electrode 113 while suppressing stray light.

[0102] In FIG. 2B, the configuration other than the auxiliary wiring having a laminated structure is the same as that in FIG. 2A.

[0103] Next, an auxiliary wiring having a cross-sectional structure different from those of FIGS. 2A and 2B will be described with reference to FIG. 2C. FIG. 2C shows an auxiliary wiring 151 having a layered structure, which is layered in a different order from the auxiliary wiring 151 of FIG. 2B. Specifically, in FIG. 2C, the first auxiliary wiring 151a is located above the second auxiliary wiring 151b. The materials of the first auxiliary wiring 151a and the second auxiliary wiring 151b are the same as those of FIG. 2B. The auxiliary wiring 151 having a layered structure can suppress the reception of stray light while suppressing a voltage drop in the common electrode 113.

[0104] In FIG. 2C, the configuration other than the auxiliary wiring having a laminated structure is the same as that in FIG. 2A.

[0105] 2A to 2C, the auxiliary wiring 151 has a cross-sectional structure as shown in FIG. 2A to 2C, which can suppress a voltage drop caused by the common electrode 113 and improve display quality. Furthermore, the auxiliary wiring 151 has an area located above the common electrode 113, which can suppress stray light and increase the detection sensitivity of the light-receiving device. Furthermore, the organic compound layer can be cut by the insulating layer 126, which can suppress crosstalk and the like. Furthermore, the organic compound layer can be microfabricated, which can provide a high-definition display device.

[0106] [Specific Example] A display device according to one embodiment of the present invention will be described using an SBS structure that allows light-emitting devices that emit different colors of light to be fabricated.

[0107] Specific Example 1 A specific example 1 of a display device according to one embodiment of the present invention will be described with reference to FIGS. 3A to 3C . The display device 100 includes a pixel portion 103 and a connection portion 140. The pixel portion 103 includes a plurality of pixels 150. The pixel 150 includes a plurality of subpixels 110. For example, the subpixel 110R includes a light-emitting device 11R that exhibits red light, the subpixel 110G includes a light-emitting device 11G that exhibits green light, and the subpixel 110B includes a light-emitting device 11B that exhibits blue light. The pixel 150 further includes a light-receiving portion 110S, and the light-receiving portion 110S includes a light-receiving device 11S.

[0108] 3A, the regions corresponding to the light-emitting device 11R, the light-emitting device 11G, the light-emitting device 11B, and the light-receiving device 11S are denoted by the symbols R, G, B, and S. The arrangement in Fig. 3A is similar to the arrangement shown in Fig. 1A etc., and is a regular arrangement.

[0109] As the light-emitting device 11R, the light-emitting device 11G, and the light-emitting device 11B, it is preferable to use an element such as an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode). Examples of the light-emitting material contained in the light-emitting device include a material that emits fluorescence (fluorescent material), a material that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a material that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF material).

[0110] Furthermore, the connection portion 140 shown in FIG. 3A is a region having a connection electrode 111C electrically connected to the common electrode 113. The common electrode 113 may extend beyond the edge of the pixel portion 103 to the connection portion 140. In FIG. 3A, the common electrode 113 extending to the connection portion 140 is indicated by a dotted line. The connection electrode 111C is given a potential to be supplied to the common electrode 113. If a voltage drop occurs due to the common electrode 113, the value of the potential will vary. The display device of this embodiment preferably has an auxiliary wiring 151 in at least the pixel 150, which prevents the value of the potential from varying. The auxiliary wiring 151 can be provided in the connection portion 140 in addition to the pixel portion 103.

[0111] The connection electrode 111C can be provided along the outer periphery of the pixel unit 103. For example, the connection electrode 111C may be provided along one side of the outer periphery of the pixel unit 103, or the connection electrode 111C may be provided over two or more sides of the outer periphery of the pixel unit 103. That is, when the top surface shape of the pixel unit 103 is rectangular, the top surface shape of the connection electrode 111C can be a strip shape along one side of the outer periphery, an L-shape along two sides of the outer periphery, a U-shape along three sides of the outer periphery, a square shape along four sides of the outer periphery, or the like.

[0112] 3B and 3C are cross-sectional views corresponding to dashed dotted lines A1-A2 and A3-A4 in Fig. 3A, respectively. Fig. 3B shows cross-sectional views of the light-emitting device 11R, the light-emitting device 11G, and the light-receiving device 11S, and Fig. 3C shows a cross-sectional view of the connection electrode 111C.

[0113] The light-emitting device 11R has a lower electrode 111R, an organic compound layer 112R, a common layer 114, and a common electrode 113. The light-emitting device 11G has a lower electrode 111G, an organic compound layer 112G, a common layer 114, and a common electrode 113. The light-emitting device 11B has a lower electrode 111B, an organic compound layer 112B, a common layer 114, and a common electrode 113. An example of a functional layer that can be used for the common layer 114 is an electron injection layer. The lower electrode is an electrode electrically connected to a transistor and may be referred to as a pixel electrode. The lower electrode functions as either an anode or a cathode of the light-emitting device and may be referred to as an anode or a cathode.

[0114] The organic compound layer 112R contains a light-emitting organic compound that emits light having an intensity in at least the red wavelength range. The organic compound layer 112G contains a light-emitting organic compound that emits light having an intensity in at least the green wavelength range. The organic compound layer 112B contains a light-emitting organic compound that emits light having an intensity in at least the blue wavelength range. A layer containing a light-emitting organic compound can be referred to as a light-emitting layer.

[0115] The organic compound layer 112 and the common layer 114 can each independently have one or more layers selected from an electron injection layer, an electron transport layer, a light-emitting layer, a hole injection layer, and a hole transport layer. The electron injection layer, the electron transport layer, the light-emitting layer, the hole injection layer, and the hole transport layer are sometimes referred to as functional layers. "Having two or more layers" includes a combination of two or more different functional layers, and a combination of two or more layers of the same functional layer made of different materials. Specific materials that can be used for the functional layers will be described later.

[0116] In this embodiment mode, the organic compound layer 112 has a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order from the lower electrode 111 side, and the common layer 114 has an electron injection layer.

[0117] The functional layer does not necessarily have to contain an organic compound as long as it can perform its function. For example, an electron injection layer or the like can be made of an inorganic compound or a film containing only inorganic substances.

[0118] The lower electrode 111R, the lower electrode 111G, and the lower electrode 111B are provided for each light-emitting device. The common electrode 113 and the common layer 114 are provided as a continuous layer common to each light-emitting device. A conductive film having reflectivity is used for each lower electrode, and a conductive film having transparency to visible light is used for the common electrode 113, thereby making it possible to realize a display device with a top-emission structure.

[0119] The end of the lower electrode 111 preferably has a tapered shape. In this specification and the like, the term "tapered shape" refers to a shape in which at least a part of the side surface of a structure is inclined with respect to the substrate surface or the surface on which the structure is formed. For example, if a region in which the angle (also referred to as the taper angle) between the inclined side surface and the substrate surface is less than 90° can be confirmed, the structure can be said to have a tapered shape. Note that even if the inclined side surface of the structure is substantially planar with a slight curvature or substantially planar with a slight unevenness, it can also be called a tapered shape.

[0120] The end of the organic compound layer 112 is preferably located in a region beyond the end of the lower electrode 111, and when the end of the lower electrode 111 has a tapered shape, the organic compound layer 112 has a shape that conforms to the tapered shape. Tapered side surfaces of the lower electrode 111 improve coverage of the organic compound layer and the like. Furthermore, tapered side surfaces of the lower electrode 111 are preferable because they facilitate removal of foreign matter (for example, dust or particles) during the manufacturing process by a process such as cleaning.

[0121] The organic compound layer 112 is processed by photolithography. Therefore, the angle between the end of the organic compound layer 112 and the substrate surface or the surface on which the organic compound layer 112 is formed is close to 90 degrees, and the end of the organic compound layer 112 may not have a tapered shape. It is preferable that the end of such an organic compound layer 112 is located in a region beyond the end of the lower electrode 111.

[0122] It is preferable to dispose an insulating layer 126 between organic compound layers whose ends are not tapered, specifically between two adjacent light-emitting devices. The insulating layer 126 is provided so as to fill the gap between at least two adjacent organic compound layers 112. More preferably, the insulating layer 126 has a region that overlaps with the end of the organic compound layer 112. When a part of the insulating layer 126 is positioned so as to overlap the organic compound layer 112, it is possible to reduce the difference in height between the top of the insulating layer 126 and the light-emitting device after the insulating layer 126 is formed. Since the insulating layer 126 may be easily peeled off, it is preferable that this difference be small.

[0123] In a cross-sectional view, the upper portion of the insulating layer 126 has a convex shape, preferably a smooth convex shape. A convex upper portion can also be described as a shape in which the center of the insulating layer 126 is higher than the ends.

[0124] By providing the common layer 114 and the common electrode 113 to cover the insulating layer 126 whose central portion is raised higher than the end portions, it is possible to prevent at least the common layer 114 and the common electrode 113 from being cut off.

[0125] Furthermore, before the insulating layer 126 is formed, an insulating layer 125 may be provided in contact with a side surface of the organic compound layer 112. The insulating layer 125 is located between the insulating layer 126 and the organic compound layer 112 and functions as a protective film for preventing the insulating layer 126 from contacting the organic compound layer 112. If the organic compound layer 112 and the insulating layer 126 come into contact with each other, the organic compound layer 112 may be dissolved by an organic solvent or the like used in forming or processing the insulating layer 126. Therefore, by providing the insulating layer 125 between the organic compound layer 112 and the insulating layer 126 as shown in this embodiment, the organic compound layer 112 can be protected.

[0126] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, by using an inorganic insulating film such as a metal oxide film, an aluminum oxide film, or a silicon oxide film formed by an ALD method as the insulating layer 125, an insulating layer 125 with few pinholes and excellent protection of the organic compound layer can be formed.

[0127] In this specification and the like, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0128] The insulating layer 125 can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, or the like. The insulating layer 125 is preferably formed by an ALD method, which has good coverage.

[0129] An insulating layer containing an organic material can be suitably used as the insulating layer 126. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, or the like can be used as the insulating layer 126. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the insulating layer 126.

[0130] Furthermore, a photosensitive resin can be used for the insulating layer 126. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0131] For the insulating layer 126, a photosensitive starting material is preferably diluted with a diluent by 2 to 10 times, preferably by 2 to 4 times. When the undiluted starting material is used, the thickness of the insulating layer 126 is 0.8 μm to 1.2 μm. When the starting material is diluted 2 times with a diluent, the thickness of the insulating layer 126 is 0.4 μm to 0.6 μm. When the starting material is diluted 3 times with a diluent, the thickness of the insulating layer 126 is 0.5 μm to 0.7 μm. Using a diluted starting material reduces the thickness and suppresses the amount of outgassing from the insulating layer 126. When the viscosity of the starting material is 3 cP to 10 cP, preferably 5 cP to 7 cP, the thickness of the insulating layer 126 can be reduced.

[0132] When a photosensitive material is used for the insulating layer 126, a processed insulating layer 126 can be formed by exposure and development. The surface of the processed insulating layer 126 may have a rounded or uneven shape. Etching may be performed to adjust the surface height of the processed insulating layer 126. The surface height can be adjusted by processing the insulating layer 126 by ashing using oxygen plasma.

[0133] The insulating layer 126 preferably contains a material that absorbs visible light. When a material that absorbs visible light is used, the insulating layer 126, in combination with the auxiliary electrode, can exhibit a stray light suppression effect. For example, the insulating layer 126 itself may be made of a material that absorbs visible light, or the insulating layer 126 may contain a pigment that absorbs visible light. For example, the insulating layer 126 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0134] The upper part of the insulating layer 126 preferably has a portion higher than the height of the upper surface of the organic compound layer 112. This allows the insulating layer 126 to absorb even light emitted obliquely upward from the light-emitting device 11, and in combination with the auxiliary electrode, can exhibit a stray light suppression effect.

[0135] The insulating layer 126 can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating. In particular, it is preferable to form the organic insulating film that becomes the insulating layer 126 by spin coating.

[0136] After the insulating layer 126 is formed, heat treatment is preferably performed in the air at a temperature of 85° C. to 120° C. for 45 minutes to 100 minutes. This allows dehydration or degassing of the insulating layer 126.

[0137] Furthermore, a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) may be provided between the insulating layer 125 and the insulating layer 126. For example, the reflective film can be formed after the insulating layer 125 is formed. The reflective film can be configured to reflect light emitted from the light-emitting layer. This can improve the light extraction efficiency.

[0138] 3B , an insulating layer 128 may be provided between the insulating layer 125 and the top surface of the organic compound layer 112. The insulating layer 128 is formed by leaving a part of a protective layer (also referred to as a sacrificial layer) for protecting the organic compound layer 112 when the organic compound layer 112 is etched. The insulating layer 128 may be formed using a material that can be used for the insulating layer 125. In particular, it is preferable to use the same material for the insulating layer 128 and the insulating layer 125 because this facilitates processing. For example, the insulating layer 128 and the insulating layer 125 may both include an aluminum oxide film, a hafnium oxide film, or a silicon oxide film.

[0139] The insulating layer 125, the insulating layer 126, and the insulating layer 128 are all insulating layers located between light-emitting devices, and may be collectively referred to as an "insulating laminate" in this specification. Because the common layer 114 and the common electrode 113 are provided on the insulating laminate, it is preferable that the ends of the insulating laminate have a tapered shape so that the common layer 114 and the common electrode 113 are not disconnected. To have a tapered end of the insulating laminate, the end of the insulating layer 125 may have a tapered shape, the end of the insulating layer 126 may have a tapered shape, the end of the insulating layer 128 may have a tapered shape, or the ends of the insulating layer 125, the insulating layer 126, and the insulating layer 128 may all have a tapered shape. When a tapered shape is formed using multiple insulating layers, it is preferable that the tapered shapes of the ends of each insulating layer are continuously formed.

[0140] Furthermore, the insulating laminate preferably has a rounded top surface at its center. In other words, the insulating laminate has a shape that is higher than the edges. To achieve this shape, the insulating layer 126 located at the top of the insulating laminate is preferably formed using an organic material.

[0141] Furthermore, the edge of the insulating laminate may have various shapes. For example, the insulating layer 125 located below the insulating laminate may protrude from the insulating layer 126. In this case, a portion of the upper part of the insulating layer 125 may be removed when the insulating layer 126 is processed. Removing the portion of the upper part of the insulating layer 125 protruding from the insulating layer 126 has the effect of preventing discontinuities in the common layer 114 and the common electrode 113.

[0142] The insulating layer 128 may protrude from the insulating layer 126. In this case, a portion of the upper part of the insulating layer 128 may be removed when the insulating layer 126 is processed. Removing the portion of the upper part of the insulating layer 128 protruding from the insulating layer 126 has the effect of preventing the common layer 114 and the common electrode 113 from being disconnected.

[0143] When the insulating layer 128 protrudes from the insulating layer 126 , the end of the insulating layer 125 located below the insulating layer 128 may coincide or approximately coincide with the end of the insulating layer 128 .

[0144] Auxiliary wiring 151 is provided on common electrode 113. The thickness of auxiliary wiring 151 (the distance marked with Ha in FIG. 3B ) will be described. The thickness (Ha) of auxiliary wiring 151 is preferably equal to or less than half the distance from the lower surface of auxiliary wiring 151 to substrate 170 (the distance marked with Hb in FIG. 3B ). In this case, the effects of suppressing stray light and voltage drop can be sufficiently exhibited.

[0145] The common electrode 113 and the auxiliary wiring 151 are attached to the substrate 170 by an adhesive layer 171. Various curing adhesives can be used for the adhesive layer 171, such as a photo-curing adhesive such as an ultraviolet curing adhesive, a reaction-curing adhesive, a thermosetting adhesive, or an anaerobic adhesive. Alternatively, an adhesive sheet or the like may be used for the adhesive layer 171.

[0146] 3C , an opening is provided in the insulating layer 125 and the insulating layer 126 above the connection electrode 111C. The connection electrode 111C and the common electrode 113 are electrically connected through the opening. The opening for electrically connecting the connection electrode 111C and the common electrode 113 may be provided in any of the insulating layers.

[0147] 3C shows the connection portion 140 having a region where the connection electrode 111C contacts the common electrode 113, but the common layer 114 may be provided on the connection electrode 111C, and the common electrode 113 may be provided on the common layer 114. When a carrier injection layer such as an electron injection layer is used for the common layer 114, the resistivity of the material used for the common layer 114 is sufficiently low, so that the connection electrode 111C can be electrically connected to the common electrode 113 via the common layer 114. This allows the common electrode 113 and the common layer 114 to be formed using the same mask (also called an area mask, a rough metal mask, or the like, to distinguish it from a fine metal mask), thereby reducing manufacturing costs.

[0148] In the following, a configuration example of a display device that is partially different from the above will be described. Note that in the following, parts that overlap with those in the above specific example 1 will be given the same reference numerals, and repeated explanations may not be provided.

[0149] [Specific Example 2] A specific example 2 of the display device of one embodiment of the present invention will be described with reference to FIG. 4A.

[0150] 4A differs from FIG. 3B and the like in that the insulating layer 126 has a flat region in its upper shape. The configuration of the end of the insulating layer 126 is the same as that of FIG. 3B. The shape of the insulating layer 126 can be varied depending on the material or manufacturing conditions used for the insulating layer 126. A common layer 114 and a common electrode 113 are provided to cover the upper surface of the insulating layer 126, which has a flat upper shape.

[0151] An auxiliary wiring 151 is provided on the insulating layer 126 via the common electrode 113 and the like. The upper surface of the common electrode 113, which is the surface on which the auxiliary wiring 151 is to be formed, is shaped to conform to the upper surface of the insulating layer 126. In FIG. 4A , the upper shape of the insulating layer 126 has a flat region, which increases the flatness of the surface on which the auxiliary wiring 151 is to be formed, making it easier to form the auxiliary wiring 151. The auxiliary wiring 151 on the flat surface on which it is to be formed can have a shape in which the width is greater than the height, which can sufficiently suppress voltage drop. The other configurations are the same as those in FIG. 3B and the like. The auxiliary wiring 151 can suppress voltage drop while also achieving a stray light suppression effect.

[0152] Specific Example 3 A specific example 3 of the display device of one embodiment of the present invention will be described with reference to FIG. 4B.

[0153] In FIG. 4B , an auxiliary wiring 151 having a stacked structure is provided. Specifically, a second auxiliary wiring 151b is provided on a first auxiliary wiring 151a. The first auxiliary wiring 151a can be provided in the same manner as the auxiliary wiring 151 in FIG. 4A . The second auxiliary wiring 151b has a light-transmitting conductive material and can be provided so as to have a region overlapping with the light-emitting device. The film thickness of the second auxiliary wiring 151b may be larger than the film thickness of the first auxiliary wiring 151a. The other configurations are the same as those in FIG. 4A and the like. The auxiliary wiring 151 having a stacked structure can suppress voltage drop and also exhibit a stray light suppression effect.

[0154] Specific Example 4 A specific example 4 of the display device of one embodiment of the present invention will be described with reference to FIG. 4C.

[0155] In FIG. 4C , an auxiliary wiring 151 having a stacked structure is provided. Specifically, the stacking order differs from that of the auxiliary wiring 151 in FIG. 4B , with the first auxiliary wiring 151a being provided on the second auxiliary wiring 151b. The second auxiliary wiring 151b includes a light-transmitting conductive material and can be provided so as to have an area overlapping with the light-emitting device. The first auxiliary wiring 151a can be provided in the same manner as the auxiliary wiring 151 in FIG. 4A . The film thickness of the second auxiliary wiring 151b may be larger than the film thickness of the first auxiliary wiring 151a. The other configurations are the same as those in FIG. 4A and the like. The auxiliary wiring 151 having a stacked structure can suppress voltage drop while also achieving a stray light suppression effect.

[0156] Specific Example 5 A specific example 5 of the display device of one embodiment of the present invention will be described with reference to FIG. 5A.

[0157] 5A, a light-shielding layer 152 is provided on a substrate 170. It is preferable that the auxiliary wiring 151 has a region in contact with the light-shielding layer 152. The other configurations are the same as those in FIG. 3B etc. The auxiliary wiring 151 can suppress voltage drop and also exert a stray light suppression effect.

[0158] Specific Example 6 A specific example 6 of the display device of one embodiment of the present invention will be described with reference to FIG. 5B.

[0159] 5B, a colored layer 173R that transmits red light and a colored layer 173G that transmits green light are provided on the substrate 170. Although the light-emitting device 11B is omitted in FIG. 5B, a colored layer 173B that transmits blue light is provided in a position overlapping with the light-emitting device 11B. However, it is preferable not to provide a colored layer in the region overlapping with the light-receiving device 11S.

[0160] The end of the colored layer 173R may have an area overlapping with the end of the colored layer 173G. The end of the colored layer 173G may have an area overlapping with the end of the colored layer 173B. These overlapping areas can function as light-blocking areas.

[0161] When describing matters common to the colored layer 173R, the colored layer 173G, and the colored layer 173B, they may be referred to as the colored layer 173.

[0162] It is preferable that the auxiliary wiring 151 has a region in contact with the colored layer 173. The other configurations are the same as those in Fig. 3B etc. The auxiliary wiring 151 can suppress voltage drop and also exert the effect of suppressing stray light.

[0163] Specific Example 7 A specific example 7 of the display device of one embodiment of the present invention will be described with reference to FIG. 5C.

[0164] 5C, a colored layer 173R and a colored layer 173G are provided on a substrate 170, and a light-shielding layer 152 is provided in the region where they overlap. The auxiliary wiring 151 preferably has a region in contact with the colored layer 173. The other configurations are the same as those in FIG. 3B and the like. The auxiliary wiring 151 can suppress voltage drop while also achieving the effect of suppressing stray light.

[0165] [Modification] In the specific example, a display device according to one embodiment of the present invention has been described using an SBS structure in which light-emitting devices that emit different colors of light are fabricated. In the modification, an example of a display device that can display full color by combining multiple light-emitting devices that emit white light with a colored layer will be described. A color filter or a color conversion layer can be used for the colored layer. Furthermore, the white-light-emitting device preferably has a tandem structure, but may also have a single structure.

[0166] [Modification 1] The display device shown in FIG. 6A differs from the display device shown in FIG. 5B mainly in that it has a white light-emitting device.

[0167] The display device shown in Fig. 6A has a plurality of light-emitting devices 11W. Each light-emitting device 11W has an organic compound layer 112W that emits white light. In addition, a colored layer 173R and a colored layer 173G are provided on a substrate 170. Although not shown in Fig. 6A, a colored layer 173B is also provided. The white light emitted from the light-emitting device 11W is colored by the colored layer 173R, the colored layer 173G, or the colored layer 173B absorbing light in a predetermined wavelength range, and is then emitted to the outside through the substrate 170, enabling full-color display.

[0168] 6B shows an example in which a light-shielding layer 152 is applied to the configuration shown in FIG. 6A above. The light-shielding layer 152 is provided on the substrate 170 side, similar to the colored layer 173. It is preferable that the colored layer 173 has a region overlapping with the light-shielding layer 152. FIG. 6B shows an example in which the colored layer 173 has a portion located between the light-shielding layers 152.

[0169] The above is a description of the modified example.

[0170] The display devices described in the specific examples and the modified examples have in common a structure in which at least the organic compound layer is cut. This structure suppresses crosstalk due to leakage current, enabling images with extremely high display quality to be displayed. Furthermore, both a high aperture ratio and high definition can be achieved. Therefore, the display device of one embodiment of the present invention can be used in an ultra-small display (microdisplay) for a head-mounted display. Note that the display device of one embodiment of the present invention can be applied to a wide range of displays, from ultra-small displays of less than 1 inch to ultra-large displays of more than 100 inches.

[0171] [Light-emitting device] Next, materials that can be used for the light-emitting device will be described.

[0172] In a light-emitting device, it is preferable to use a light-transmitting conductive film for the electrode on the side from which light is extracted, and a conductive film that reflects visible light for the electrode on the side from which light is not extracted. Alternatively, a conductive film that transmits visible light may be used together with a conductive film that reflects visible light for the electrode on the side from which light is not extracted. In this case, it is preferable to dispose the electrode between the conductive film that reflects visible light and the organic compound layer. That is, it is sufficient if light emitted from the light-emitting device is reflected by the conductive film that reflects visible light and can be extracted from the display device.

[0173] Materials for forming electrodes of light-emitting devices can include metals, alloys, electrically conductive compounds, and mixtures thereof. Specific examples include indium tin oxide, In-Si-Sn oxide, indium zinc oxide, In-W-Zn oxide, aluminum-containing alloys (also referred to as aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (also referred to as Al-Ni-La alloys), alloys of silver and magnesium (also referred to as MgAg), and alloys of silver, palladium, and copper (also referred to as Ag-Pd-Cu, APC). Other metals that can be used include aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, neodymium, and alloys containing these metals in combination. Other examples that can be used include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium) that are not listed above, rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0174] Of the above materials, those capable of emitting holes can be used as the anode, and those capable of emitting electrons can be used as the cathode.

[0175] It is preferable that a micro-optical resonator (microcavity) structure is applied to the light-emitting device. Therefore, it is preferable that one of a pair of electrodes of the light-emitting device has an electrode that is transparent and reflective to visible light (semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (reflective electrode). By having the light-emitting device have a microcavity structure, light emission can be resonated between the pair of electrodes, narrowing the line of light emitted from the light-emitting device and further strengthening it.

[0176] When a micro-optical resonator (microcavity) structure is applied, the distance between a pair of electrodes is different from each other in the red, green, and blue light-emitting devices.

[0177] The semi-transmitting / semi-reflective electrode can be a reflective electrode thinned to a thickness that allows some visible light to pass through, or a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also called a transparent electrode).

[0178] The transparent electrode has a light transmittance of 40% or more. For example, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for a light-emitting device. The visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.

[0179] The organic compound layer of the light-emitting device has at least a light-emitting layer. The light-emitting layer is a layer containing a light-emitting material (also called a light-emitting substance). The light-emitting layer can contain one or more light-emitting substances. As the light-emitting substance, a substance that emits light of blue, purple, blue-purple, green, yellow-green, yellow, orange, red, or the like is appropriately used. Furthermore, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0180] Examples of the light-emitting material include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0181] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0182] Examples of phosphorescent materials include organometallic complexes (particularly iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton; organometallic complexes (particularly iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand; platinum complexes; and rare earth metal complexes.

[0183] The light-emitting layer may contain one or more organic compounds (host materials, assist materials, etc.) in addition to a light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Furthermore, as the one or more organic compounds, a bipolar material or a TADF material can be used.

[0184] The light-emitting layer preferably includes, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination that easily forms an exciplex. This configuration allows for efficient emission using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from the exciplex to the light-emitting material (phosphorescent material). By selecting a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smooth, allowing for efficient emission. This configuration simultaneously enables high efficiency, low-voltage operation, and long life of the light-emitting device.

[0185] Each of the organic compound layers 112 may further include a layer containing a substance with high hole-injection properties, a substance with high hole-transport properties, a hole-blocking material, a substance with high electron-transport properties, a substance with high electron-injection properties, an electron-blocking material, or a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), as a layer other than the light-emitting layer.

[0186] The light-emitting device can be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-emitting device can be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0187] For example, each of the organic compound layers 112 may have one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0188] The common layer 114 may be one or more of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as the common layer 114. Note that the light-emitting device may not have the common layer 114.

[0189] The hole injection layer is a layer that injects holes from the anode into the hole transport layer and contains a material with high hole injection properties, such as an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0190] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light emitting layer. The hole transport layer is a layer that contains a hole transporting material. Examples of the hole transporting material include 10 −６ cm ２A substance having a hole mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. As the hole transporting material, a material having a high hole transporting property, such as a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton), is preferred.

[0191] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light emitting layer. The electron transport layer is a layer that contains an electron transporting material. The electron transporting material is a material having a molecular weight of 1×10 −６ cm ２ A substance having an electron mobility of 1 / Vs or more is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than holes. Examples of electron-transporting materials that can be used include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0192] Other examples of electron transporting materials that can be used include compounds having an electron-deficient heteroaromatic ring with an unshared electron pair, such as a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, or pyridazine ring), or a triazine ring.

[0193] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) level of −3.6 eV to −2.3 eV. Generally, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0194] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition point (Tg) and is superior in heat resistance compared to BPhen.

[0195] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer and contains a material with high electron injection properties. Examples of the material with high electron injection properties include alkali metals, alkaline earth metals, and compounds thereof. Examples of the material with high electron injection properties include a composite material containing an electron transport material and a donor material (electron donor material).

[0196] For example, alkali metals or alkaline earth metals include lithium, cesium, magnesium, etc., and compounds include lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ｘ , where X is an arbitrary number), lithium oxide (LiO ｘ , where X is an arbitrary number), or cesium carbonate.

[0197] The electron injection layer may also be made of an organic compound, such as 8-quinolinolatolithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), or 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen).

[0198] The organic compound may contain a dopant, which may be a metal, such as silver (Ag) or ytterbium (Yb).

[0199] As a material that can be used for the electron injection layer, a composite material containing the above alkali metal or alkaline earth metal and the above organic compound can also be used.

[0200] The electron injection layer may have a stacked structure of two or more layers. The above-described materials can be appropriately combined to form the stacked structure. For example, the electron injection layer may have a structure in which lithium fluoride is used for the first layer and ytterbium is used for the second layer.

[0201] The electron-transporting material described above may be used for the electron-injecting layer.

[0202] In the case of fabricating a light-emitting device with a tandem structure, a charge-generating layer (sometimes referred to as an intermediate layer) is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between a pair of electrodes.

[0203] For example, a material applicable to an electron injection layer, such as lithium, can be suitably used for the charge generation layer. For example, a material applicable to a hole injection layer can be suitably used for the charge generation layer. For example, a layer containing a hole transport material and an acceptor material can be used for the charge generation layer. For example, a layer containing an electron transport material and a donor material can be used for the charge generation layer. By forming such a charge generation layer, an increase in driving voltage can be suppressed when light-emitting units are stacked.

[0204] [Light-Receiving Device] Next, materials that can be used for the light-receiving device will be described.

[0205] The active layer 112S can be, for example, a pn-type or pin-type photodiode. N-type and p-type semiconductor materials that can be used for the active layer 112S are listed below. The n-type and p-type semiconductor materials may be stacked in layers, or may be mixed together to form a single layer.

[0206] The active layer 112S has an n-type semiconductor material, such as fullerene (e.g., C ６０ , C ７０ Examples of electron-accepting organic semiconductor materials include fullerene derivatives and the like. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when π-electron conjugation (resonance) spreads on a plane, as in benzene, electron-donating (donor) properties increase, but fullerenes have a spherical shape, so they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties cause charge separation quickly and efficiently, making them useful as light-receiving elements. C ６０ , C ７０ Both have a wide absorption band in the visible light region, and C ７０ is C ６０Other fullerene derivatives include [6,6]-Phenyl-C71-butylic acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butylic acid methyl ester (abbreviation: PC60BM), 1',1",4',4"-Tetrahydro-di[1,4]methanenaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA), and the like.

[0207] Furthermore, examples of materials for n-type semiconductors include perylene tetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic acid diimide (abbreviation: Me-PTCDI).

[0208] An example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation: FT2TDMN).

[0209] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0210] Examples of the p-type semiconductor material of the active layer 112S include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0211] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0212] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0213] It is preferable to use a spherical fullerene as the electron-accepting organic semiconductor material and a planar organic semiconductor material as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0214] For example, the active layer 112S is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor, or may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0215] The light-receiving device may be made of either a low-molecular-weight compound or a high-molecular-weight compound, and may contain an inorganic compound. The layers constituting the light-receiving device may be formed by a method such as vapor deposition (including vacuum vapor deposition), transfer, printing, inkjet printing, or coating.

[0216] The light receiving device may be made of, for example, an inorganic compound such as zinc oxide (ZnO) or an organic compound such as polyethyleneimine ethoxylate (PEIE), and may have a mixed film of PEIE and ZnO.

[0217] Alternatively, a polymer compound such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]] polymer (abbreviation: PBDB-T) or a PBDB-T derivative, which functions as a donor, can be used for the active layer 112S. For example, a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0218] The active layer 112S may also be a mixture of three or more materials. For example, in order to expand the wavelength range, a third material may be mixed in addition to an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0219] <Layout> There are no particular limitations on the arrangement of the sub-pixels, and a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, a pentile arrangement, or the like can be used.

[0220] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. The top surface shape of the sub-pixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0221] In a display device having a light-emitting device and a light-receiving device in each pixel, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0222] 7A, 7B, and 7C includes subpixels 110G, 110B, and 110R, and a light receiving portion 110S, and further includes auxiliary wiring 151. In Figures 7A, 7B, and 7C, the regions corresponding to the subpixels 110G, 110B, 110R, and the light receiving portion 110S are denoted by the symbols R, G, B, and S.

[0223] The pixel 150 shown in Fig. 7A is arranged in a stripe pattern. The pixel shown in Fig. 7B is arranged in a matrix pattern. Auxiliary wiring 151 is located between the subpixels and between the subpixels and the light receiving section. The auxiliary wiring 151 is not limited to the position shown in Figs. 7A and 7B.

[0224] The pixel 150 shown in Figure 7C has an arrangement in which two subpixels (subpixel 110R, subpixel 110G) and a light receiving section (110S) are vertically arranged next to one subpixel (subpixel 110B). Auxiliary wiring 151 is located between the subpixels and between the subpixels and the light receiving section. The auxiliary wiring 151 is not limited to the position shown in Figure 7C.

[0225] The layout of the sub-pixels is not limited to the configurations shown in FIGS. 7A to 7C.

[0226] The sub-pixel 110R has a light-emitting device that emits red light, the sub-pixel 110G has a light-emitting device that emits green light, the sub-pixel 110B has a light-emitting device that emits blue light, and the light-receiving section 110S has a light-receiving device.

[0227] When the light-receiving area of ​​the light-receiving portion 110S is smaller than the light-emitting area of ​​the other subpixels, the imaging range is narrowed, which can suppress blurring of the imaging result and improve the resolution. Therefore, the display device of one embodiment of the present invention can capture high-definition or high-resolution images. For example, the light-receiving portion 110S can be used to capture images for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0228] The light receiving unit 110S can also be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).

[0229] A touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the display device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not come into contact with the display device. For example, a configuration in which the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm, is preferable. This configuration enables the display device to be operated without the object directly touching the display device, in other words, it enables the display device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the display device becoming dirty or scratched, or enables the display device to be operated without the object directly touching dirt (e.g., dust, viruses, etc.) attached to the display device.

[0230] When high-resolution imaging is performed, it is preferable that the light receiving unit 110S is provided in all pixels of the display device. On the other hand, when used in a touch sensor or near-touch sensor, the light receiving unit 110S does not require high accuracy compared to when imaging a fingerprint, etc., so it is sufficient that it is provided in some of the pixels of the display device. By making the number of light receiving units 110S in the display device smaller than the number of sub-pixels 110R, etc., the detection speed can be increased.

[0231] FIG. 7D shows an example of a pixel circuit of a sub-pixel (PIX1) having a light-receiving device.

[0232] 7D includes a light receiving device PD, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitance element C2. Here, an example is shown in which a photodiode is used as the light receiving device PD.

[0233] The light-receiving device PD has an anode electrically connected to the wiring V1 and a cathode electrically connected to one of the source and drain of the transistor M11. The transistor M11 has a gate electrically connected to the wiring TX and the other of the source and drain electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The transistor M12 has a gate electrically connected to the wiring RES and the other of the source and drain electrically connected to the wiring V2. The transistor M13 has one of the source and drain electrically connected to the wiring V3 and the other of the source and drain electrically connected to one of the source and drain of the transistor M14. The transistor M14 has a gate electrically connected to the wiring SE and the other of the source and drain electrically connected to the wiring OUT1.

[0234] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light-receiving device PD is driven, a potential higher than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of a node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the light-receiving device PD. The transistor M13 functions as an amplifying transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out an output according to the potential of the node to an external circuit electrically connected to the wiring OUT1.

[0235] The transistors M11, M12, M13, and M14 are preferably OS transistors each including a metal oxide (oxide semiconductor) in a semiconductor layer in which a channel is formed.

[0236] An OS transistor has a wider band gap and a lower carrier density than silicon, and can achieve an extremely low off-state current. Therefore, the low off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use OS transistors including an oxide semiconductor, particularly for the transistors M11 and M12 connected in series with the capacitor C2. Furthermore, by using OS transistors for other transistors as well, manufacturing costs can be reduced.

[0237] For example, the off-state current of an OS transistor per 1 μm channel width at room temperature is 1 aA (1×10 −１８ A) Below, 1zA (1×10 −２１ A) or less, or 1yA (1 x 10 −２４ Note that the off-state current of a Si transistor per 1 μm of channel width at room temperature can be 1 fA (1×10 −１５ A) More than 1pA (1×10 −１２ Therefore, it can be said that the off-state current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0238] Alternatively, the transistors M11 to M14 may be transistors using silicon as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0239] Alternatively, a structure may be used in which at least one of the transistors M11 to M14 includes an oxide semiconductor and the remaining transistors include silicon.

[0240] Although the transistors are shown as n-channel transistors in FIG. 7D, p-channel transistors can also be used.

[0241] Furthermore, the display device of one embodiment of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted (for example, within a range of 0.01 Hz to 240 Hz) depending on the content displayed on the display device, thereby reducing power consumption. Furthermore, driving that reduces the power consumption of the display device by driving it at a reduced refresh rate may be called idling stop (IDS) driving.

[0242] The drive frequency of the touch sensor or near-touch sensor may be changed depending on the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near-touch sensor may be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and an increased response speed of the touch sensor or near-touch sensor.

[0243] 8A to 14, an example of a method for manufacturing the display device of the above-described modified example 1 will be described. In the drawings, the pixel portion 103 is shown on the left side, and the connection portion 140 is shown on the right side.

[0244] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by sputtering, CVD, vacuum deposition, PLD, ALD, etc. CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. One type of thermal CVD method is metal organic chemical vapor deposition (MOCVD).

[0245] Furthermore, the thin film constituting the display device can be formed by a method such as spin coating, dipping, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating, which are wet film formation methods.

[0246] Furthermore, when processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method or the like. Furthermore, the thin film may be directly formed by a film formation method using a metal mask or the like.

[0247] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0248] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other examples include ultraviolet light, KrF laser light, and ArF laser light. Extreme ultraviolet (EUV) light, X-rays, and the like may also be used as light for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a resist mask is not required.

[0249] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0250] [Preparation of Substrate] Although not shown, a substrate is prepared. A substrate having heat resistance sufficient to withstand at least the subsequent heat treatment can be used as the substrate. When an insulating substrate is used as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. Furthermore, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0251] The substrate is preferably a semiconductor substrate or an insulating substrate on which a semiconductor circuit including a semiconductor element such as a transistor is formed. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0252] An insulating layer 104 is formed on the substrate. The insulating layer 104 is the uppermost layer of insulating layers stacked on the substrate. The insulating layer 104 may have openings. The openings are formed to reach transistors, wirings, electrodes, or the like provided on the substrate and electrically connect them to the conductive layer 161, etc. Such openings may be referred to as contact holes. The openings can be formed by photolithography or the like.

[0253] The insulating layer 104 can be formed using an inorganic material or an organic material. An organic material is preferable because it can ensure the flatness of the upper surface of the insulating layer 104. As the organic material, one or more materials selected from acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. When two or more materials are used, the selected organic materials may be stacked.

[0254] [Formation of Conductive Layer 161, Resin Layer 163, Conductive Layer 162, and Lower Electrode 111] In this manufacturing method, the case where the lower electrode 111 shown in Modification Example 1 is formed after the conductive layer 161, the resin layer 163, and the conductive layer 162 are formed will be described.

[0255] A conductive film to be the conductive layer 161 is formed over the insulating layer 104. The top surface of the insulating layer 104 is a surface where the conductive film is formed, and it is preferable that the top surface is flat because the conductive film is less likely to be cut. The conductive layer 161 can be formed using one or more metal materials selected from aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, neodymium, and the like, or an alloy in which these metal materials are appropriately combined.

[0256] If the conductive film has a recess on its surface after being formed, a layer containing a resin as an organic material (hereinafter referred to as a resin layer) 163 may be formed in the recess. The resin layer 163 can reduce unevenness caused by the insulating layer 104 and the conductive layer 161.

[0257] It is preferable to use a photosensitive resin as the resin layer 163. In this case, a resin film is first formed, and then the resin film is exposed to light through a resist mask, followed by a development process, thereby forming the resin layer 163. Thereafter, in order to adjust the height of the upper surface of the resin layer 163, the upper part of the resin layer 163 may be etched by ashing or the like.

[0258] Furthermore, when a non-photosensitive resin is used as the resin layer 163, the resin layer 163 can be formed by forming the resin film and then etching the upper part of the resin film by ashing or the like until the thickness is optimized and the surface of the conductive film that will become the conductive layer 161 is exposed.

[0259] Subsequently, a conductive film to be the conductive layer 162 is formed over the conductive film to be the conductive layer 161 and the resin layer 163. The conductive layer 162 may include one or more materials selected from the metals and the like shown for the conductive layer 161.

[0260] Next, a conductive film that will become the lower electrode 111 and the connection electrode 111C is formed to cover the conductive film that will become the conductive layer 161 and the conductive film that will become the conductive layer 162. The lower electrode 111 functions as an anode or cathode of the light-emitting device. The lower electrode 111 can be made of a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like, as appropriate. Specifically, the materials mentioned above as the electrodes of the light-emitting device can be used.

[0261] Then, a resist mask is formed on the three conductive films by photolithography, and unnecessary portions of each conductive film are removed by etching. After that, the resist mask is removed, so that the conductive layer 161, the conductive layer 162, the lower electrode 111, and the connection electrode 111C can be formed in the same etching process using the same resist mask ( FIG. 8A ).

[0262] Note that although the conductive layers 161 and 162 are formed in the same etching step using the same resist mask, the conductive layers 161 and 162 may be individually processed using different resist masks. In this case, it is preferable to process the conductive layers 161 and 162 so that the conductive layer 162 is included inside the contour of the conductive layer 161 in a plan view.

[0263] Although the conductive layer 162 and the lower electrode 111, etc. are formed in the same etching process using the same resist mask, the conductive layer 162 and the lower electrode 111, etc. may be processed separately using different resist masks. In this case, it is preferable to process the conductive layer 162 and the lower electrode 111, etc. so that the lower electrode 111 is included inside the contour of the conductive layer 162, etc. in a plan view.

[0264] [Deposition of Organic Compound Film] Next, an organic compound film 112f capable of emitting white light is deposited to cover the lower electrode 111 and the connection electrode 111C (FIG. 8B). The organic compound film 112f may have a single structure or a tandem structure. The organic compound film 112f is formed by laminating various functional layers.

[0265] When the organic compound film 112f has a tandem structure, the first light-emitting unit preferably has at least a blue light-emitting layer. A charge generation layer may be provided between the first light-emitting unit and the second light-emitting unit. The second light-emitting unit preferably has at least a green light-emitting layer and a red light-emitting layer. In the second light-emitting unit, the green light-emitting layer and the red light-emitting layer may be in contact with each other, and each may contain a phosphorescent material.

[0266] The charge generation layer may be a layer containing a hole transporting material and an acceptor material, or may be a layer containing an electron transporting material and a donor material.

[0267] The electron transport material may be the same as the material used for the electron injection layer. Because the charge generation layer is subsequently processed by etching or the like, materials that do not contain alkali metals or alkaline earth metals are preferred for the electron injection layer. For example, an organic compound containing a dopant may be used. NBPhen may be used as the organic compound, and Ag may be used as the dopant.

[0268] The functional layers of the organic compound film 112f can be formed by a vacuum evaporation method. However, the method is not limited thereto, and the functional layers of the organic compound film 112f can also be formed by a sputtering method, an ink-jet method, or the like.

[0269] 8B, the organic compound film 112f is formed so as to cover the connection electrode 111C, but the present invention is not limited to this. For example, by using an area mask to define the film formation area, the film formation area of ​​the organic compound film 112f may be set inside the connection portion 140 so that the organic compound film 112f does not overlap the connection electrode 111C. This is preferable because it is possible to prevent the connection electrode 111C from coming into contact with the organic compound film 112f and, further, the remover used to remove the organic compound film 112f does not come into contact with the surface of the connection electrode 111C.

[0270] Alternatively, the organic compound film 112f may be separately formed using a fine metal mask. In this case, the organic compound film 112f may be formed so as to cover only the lower electrode 111R, the lower electrode 111G, and the lower electrode 111B. This prevents the lower electrode 111S and the connection electrode 111C from contacting the organic compound film 112f, and is also preferable because the remover used to remove the organic compound film 112f does not come into contact with the surfaces of the lower electrode 111S and the connection electrode 111C.

[0271] The organic compound film 112f has various functional layers, and may be a laminate having, in this order from the lower electrode 111, at least a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer, for example.

[0272] One of the functional layers is an electron injection layer located on the electron transport layer. In this embodiment, the electron injection layer is formed later to serve as a common layer. The common layer may be any functional layer located between the light-emitting layer and the common electrode. Of course, all functional layers may be separated into subpixels without providing a common layer.

[0273] The electron transport layer located at the top of the organic compound film 112f is exposed to a processing process using photolithography to obtain the processed organic compound layer 112. Therefore, it is preferable to use a material having high heat resistance for the electron transport layer. For example, a material having a glass transition point of 110° C. or higher and 165° C. or lower, preferably 120° C. or higher and 135° C. or lower, is preferably used as the material having high heat resistance.

[0274] The electron transport layer exposed to processing may have a laminated structure. An example of such a laminated structure is a structure in which a second electron transport layer is laminated on a first electron transport layer. Because the first electron transport layer is covered with the second electron transport layer for a period during processing, the first electron transport layer may have lower heat resistance than the second electron transport layer. For example, the second electron transport layer may be made of a material having a glass transition point of 110°C or higher and 165°C or lower, preferably 120°C or higher and 135°C or lower, and the first electron transport layer may be made of a material having a glass transition point lower than that of the second electron transport layer, for example, 100°C or higher and 155°C or lower, preferably 110°C or higher and 125°C or lower.

[0275] Although it is possible to use the top layer of the organic compound film 112f as the light-emitting layer, damage caused by this processing may penetrate into the light-emitting layer, significantly impairing reliability. Therefore, when manufacturing a display device according to one embodiment of the present invention, it is recommended to perform the above processing after forming a functional layer (e.g., an electron transport layer) above the light-emitting layer. A mask layer or the like may also be formed on the organic compound film to prevent damage caused by processing from penetrating into the light-emitting layer. By applying this method, a highly reliable display panel can be provided. Note that in this specification and the like, a mask layer is positioned above an organic compound film and has the function of protecting the organic compound film during the manufacturing process.

[0276] [Deposition of Mask Film 144] Subsequently, a mask film 144 is formed to cover the organic compound film 112f (FIG. 8C). The mask film 144 has a function of protecting the organic compound film 112f when the organic compound film 112f is etched.

[0277] The mask film 144 may preferably have a high etching selectivity with respect to the organic compound film 112f when etching the organic compound film 112f. Furthermore, in some cases where mask films are stacked, the mask film 144 may preferably have a high etching selectivity with respect to other mask films, such as an upper mask film (specifically, the mask film 146) described later. Furthermore, when removing the mask film 144, the mask film 144 may preferably be removable by wet etching, which does not damage the organic compound film 112f.

[0278] For example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be suitably used as the mask film 144. The mask film 144 can be formed by various film formation methods such as a sputtering method, a vapor deposition method, a CVD method, or an ALD method.

[0279] In particular, the ALD method causes less damage to the layer to be formed, so that the mask film 144 formed directly on the organic compound film 112f is preferably formed by the ALD method.

[0280] For example, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material can be used for the mask film 144. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0281] Further, a metal oxide such as indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO) can be used for the mask film 144. Further, indium oxide, indium zinc oxide (In—Zn oxide), indium tin oxide (In—Sn oxide), indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or the like can be used. Alternatively, indium tin oxide containing silicon can be used.

[0282] In addition, in the indium gallium zinc oxide or indium gallium tin zinc oxide, one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, tin, cobalt, and magnesium may be used instead of gallium. In particular, to obtain the same effect as gallium, it is preferable to use one or more selected from aluminum or yttrium.

[0283] The mask film 144 may also include an inorganic material. Examples of inorganic materials that can be used include oxides such as aluminum oxide, hafnium oxide, and silicon oxide, nitrides such as silicon nitride and aluminum nitride, and oxynitrides such as silicon oxynitride. Such inorganic materials can be formed using a film formation method such as a sputtering method, a CVD method, or an ALD method.

[0284] The mask film 144 may also contain an organic material. For example, a material that can be dissolved in a solvent that is chemically stable to the organic compound film 112f may be used as the organic material. In particular, a material that dissolves in water or alcohol is preferably used for the mask film 144. When forming the mask film 144, it is preferable to apply the mask film 144 by a wet film formation method in a state where the mask film 144 is dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because the solvent can be removed at a low temperature in a short time, thereby reducing thermal damage to the EL layer.

[0285] The mask film 144 can be formed using a wet film forming method.

[0286] The mask film 144 may be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, the mask film 144 may be made of a fluororesin such as perfluoropolymer.

[0287] [Deposition of Mask Film 146] Subsequently, the mask film 146 is deposited on the mask film 144 (FIG. 8C). In this embodiment, the mask films are stacked, but it is also possible to protect the organic compound film 112f by using only the mask film 144 or only the mask film 146 as a single-layer mask film.

[0288] The mask film 146 may be used as a hard mask when etching the mask film 144 later. After processing the mask film 146, the mask film 144 is exposed. Therefore, when using the mask film 146 as a hard mask, it is preferable to select a combination of mask films 144 and 146 that have a high etching selectivity relative to each other.

[0289] The mask film 146 can be selected from various materials depending on the etching conditions of the mask film 144 and the etching conditions of the mask film 146. For example, the mask film 146 can be selected from films that can be used for the mask film 144, and a material different from that of the mask film 144 can be selected.

[0290] For example, an oxide film or an oxynitride film can be used as the mask film 146. Typical oxide films or oxynitride films include silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium oxynitride, or the like.

[0291] Furthermore, for example, a nitride film can be used as the mask film 146. Typical nitride films include silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, germanium nitride, or the like.

[0292] As a combination of the mask film 144 and the mask film 146, for example, an inorganic material such as aluminum oxide, hafnium oxide, or silicon oxide formed by the ALD method can be used as the mask film 144, and a metal oxide containing indium such as indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO) formed by the sputtering method can be used as the mask film 146.

[0293] Furthermore, the mask film 146 to be combined with the mask film 144 may be made of one or more metals selected from tungsten, molybdenum, copper, aluminum, titanium, tantalum, etc., or an alloy containing such metals. When the mask film 146 is formed as a hard mask, it is preferable to use the above metals or alloys. When the mask film 146 is formed as a hard mask, it is preferable to make the film thickness of the mask film 146 larger than the film thickness of the mask film 144.

[0294] [Formation of Resist Mask 143] Next, a resist mask 143 is formed on the mask film 146 at positions overlapping the lower electrode 111R, the lower electrode 111G, and the lower electrode 111B (FIG. 9A). At this time, a resist mask is not formed at positions overlapping the lower electrode 111S and the connection electrode 111C.

[0295] The resist mask 143 can be made of a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.

[0296] When a material that dissolves the organic compound film 112f is used in a solvent for the resist material, there is a risk that the organic compound film 112f etc. will dissolve if the mask film 146 is not provided and there are defects such as pinholes in the mask film 144. In this case, by positioning the mask film 146 on the mask film 144 when forming the resist mask 143, it is possible to prevent such a problem from occurring.

[0297] When a material that does not dissolve the organic compound film 112f is used as a solvent for the resist material, the resist mask 143 may be formed directly on the mask film 144 without providing the mask film 146 in some cases.

[0298] [Etching of Mask Film 146] Subsequently, a portion of the mask film 146 that is not covered by the resist mask 143 is removed by etching to form a mask layer 147 (FIG. 9B).

[0299] When etching the mask film 146, it is preferable to use etching conditions with a high selectivity so that the mask film 144 is not removed by the etching. The mask film 146 can be etched by wet etching or dry etching.

[0300] [Removal of Resist Mask 143] Subsequently, the resist mask 143 is removed. The resist mask 143 is removed in a state where the organic compound film 112f is covered with the mask film 144.

[0301] The resist mask 143 can be removed by wet etching or dry etching. In particular, it is preferable to remove the resist mask 143 by dry etching (also called plasma ashing) using oxygen gas as an etching gas.

[0302] Again, the removal of the resist mask 143 is performed in a state where the organic compound film 112f is covered with the mask film 144, thereby suppressing processing damage to the organic compound film 112f. In particular, contact of oxygen with the organic compound film 112f may adversely affect its characteristics. Therefore, when etching is performed using the oxygen gas, it is preferable to perform the etching in a state where the organic compound film 112f is covered with the mask film 144. Furthermore, even when the resist mask 143 is removed by wet etching, the organic compound film 112f does not come into contact with the chemical solution, so dissolution of the organic compound film 112f can be prevented.

[0303] [Etching of Mask Film 144] Subsequently, using the mask layer 147 as a hard mask, a portion of the mask film 144 is removed by etching to form a mask layer 145 (FIG. 9B).

[0304] The mask film 144 can be etched by wet etching or dry etching.

[0305] [Etching of organic compound film 112f] Subsequently, a portion of the organic compound film 112f that is not covered by the mask layer 145 is removed by etching to form an organic compound layer 112W(R), an organic compound layer 112W(G), and an organic compound layer 112W(B), which are independent of each other ( FIG. 9C ). The organic compound layer 112W(R) will later become an organic compound layer of a light-emitting device that emits red light, the organic compound layer 112W(G) will later become an organic compound layer of a light-emitting device that emits green light, and the organic compound layer 112W(B) will later become an organic compound layer of a light-emitting device that emits blue light.

[0306] When describing matters common to the organic compound layer 112W(R), the organic compound layer 112W(G), and the organic compound layer 112W(B), they may be referred to as the organic compound layer 112W. At least a highly heat-resistant functional layer, for example, an electron transport layer, may be located on the outermost surface of each of the organic compound layers 112W.

[0307] At this time, the organic compound film 112f on the lower electrode 111S and the connection electrode 111C is removed, and the lower electrode 111S and the connection electrode 111C are exposed.

[0308] For etching the organic compound film 112f, it is preferable to use dry etching using an etching gas that does not contain oxygen as a main component. This is because, as mentioned above, contact of oxygen with the organic compound film 112f may adversely affect its characteristics. Specifically, the organic compound film 112f may be altered in quality, but using an etching gas that does not contain oxygen as a main component can suppress this alteration, thereby realizing a highly reliable display device. An example of an etching gas that does not contain oxygen as a main component is CF ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ , H ２ Alternatively, a rare gas such as He may be used. A mixed gas of the above gas and a dilution gas not containing oxygen may be used as the etching gas.

[0309] The etching of the organic compound film 112f is not limited to the above, and may be dry etching using other gases or wet etching.

[0310] According to the above-described process, the organic compound layer 112W(R), the organic compound layer 112W(G), and the organic compound layer 112W(B) can be formed by simultaneous processing. This reduces the number of processing steps to one-third of the number required when organic compound layers are separately formed for the light-emitting device 11R, the light-emitting device 11G, and the light-emitting device 11B. By using the above-described method, the manufacturing process can be simplified, and the productivity of the display device of one embodiment of the present invention can be improved.

[0311] Note that the insulating layer 104 is exposed when the organic compound film 112f is etched. Therefore, a recess may be formed in the insulating layer 104 in a region overlapping with the slit 118a or the slit 118b. Note that if the formation of a recess is not desired, it is preferable to use a film that is highly resistant to the etching process of the organic compound film 112f as the insulating layer 104. For example, it is preferable to use an insulating film containing an inorganic material as the insulating layer 104.

[0312] Furthermore, slits 118a and 118b are formed between the organic compound layers 112W. That is, the organic compound layer 112W obtained through a processing step using photolithography can have widths of the slits 118a and 118b, indicated by arrows in FIG. 9C, of ​​8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. The widths of the slits 118a and 118b correspond to the distance between each subpixel. By narrowing the distance between each subpixel, a display device with high definition and a large aperture ratio can be provided. Note that the widths of the slits 118a and 118b do not need to be constant. For example, the width of the slit 118a may be larger than the width of the slit 118b. The width of the slit 118b may also be larger than the width of the slit 118a.

[0313] As shown by the slits 118a and 118b, adjacent organic compound layers 112W are separated, and the leakage path of current is divided, thereby suppressing leakage current (also referred to as side leakage current). This makes it possible to increase the luminance, contrast, display quality, power efficiency, or power consumption of the light-emitting device.

[0314] [Deposition of Semiconductor Film 155f] Next, the semiconductor film 155f is deposited to cover the lower electrode 111 and the connection electrode 111C ( FIG. 10A ). The semiconductor film 155f is a film that will be processed into the active layer 112S in a later step, and any material applicable to the active layer 112S described above may be used. The semiconductor film 155f can be deposited preferably by vacuum deposition. However, the method is not limited to this, and the film can also be deposited by sputtering, inkjet printing, or the like. The deposition methods described above can also be used as appropriate.

[0315] Here, since the mask layer 145 and the mask layer 147 are provided over the organic compound layer 112W, the organic compound layer 112W can be prevented from contacting the semiconductor film 155f.

[0316] In addition, when forming the semiconductor film 155f, an area mask may be used to limit the area in which the semiconductor film 155f is formed to the inside of the connection portion 140 so that the semiconductor film 155f does not overlap the connection electrode 111C. This makes it possible to prevent the connection electrode 111C from coming into contact with the semiconductor film 155f.

[0317] [Deposition of Mask Film 174] Subsequently, a mask film 174 is deposited to cover the semiconductor film 155f (FIG. 10B).

[0318] The mask film 174 may be a film that is highly resistant to the etching process of the active layer 112S, i.e., a film with a large etching selectivity. The mask film 174 may also be a film that has a large etching selectivity relative to a mask film such as the mask film 176 described below. Furthermore, it is particularly preferable to use a film that can be removed by wet etching, which causes little damage to the active layer 112S, for the mask film 174.

[0319] The mask film 174 can be formed using any of the materials that can be used for the mask film 144. The mask film 174 can be formed by various film formation methods such as sputtering, evaporation, CVD, and ALD. In particular, the ALD method causes less film formation damage to the layer on which the mask film 174 is formed, so the mask film 174 that is formed directly on the semiconductor film 155f is preferably formed using the ALD method.

[0320] [Deposition of Mask Film 176] Subsequently, the mask film 176 is deposited on the mask film 174 (FIG. 10B).

[0321] The mask film 176 is preferably used as a hard mask when etching the mask film 174 later. Furthermore, when processing the mask film 176 later, the mask film 174 is exposed. Therefore, a combination of films having a large etching selectivity with respect to each other is selected for the mask film 174 and the mask film 176. Therefore, a film that can be used for the mask film 176 can be selected depending on the etching conditions for the mask film 174 and the etching conditions for the mask film 176.

[0322] The mask film 176 can be selected from various materials depending on the etching conditions of the mask film 174 and the etching conditions of the mask film 176. For example, the mask film 176 can be selected from the films that can be used for the mask film 144.

[0323] For example, it is preferable to use an inorganic material such as aluminum oxide, hafnium oxide, or silicon oxide formed by an ALD method as the mask film 174, and a metal oxide containing indium such as indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO) formed by a sputtering method as the mask film 176. Alternatively, it is preferable to use a metal such as tungsten, molybdenum, copper, aluminum, titanium, or tantalum, or an alloy containing such a metal as the mask film 176.

[0324] [Formation of Resist Mask 172] Next, a resist mask 172 is formed on the mask film 176 at a position overlapping with the lower electrode 111S (FIG. 10C). At this time, the resist mask is not formed at a position overlapping with the lower electrodes 111R, 111G, 111B, and the connection electrode 111C.

[0325] The resist mask 172 may be formed using a material that can be used for the resist mask 143 .

[0326] [Etching of Mask Film 176] Subsequently, a portion of the mask film 176 that is not covered by the resist mask 172 is removed by etching to form a mask layer 177 (FIG. 11A).

[0327] When etching the mask film 176, it is preferable to use etching conditions with a high selectivity so that the mask film 174 is not removed by the etching. The mask film 176 can be etched by wet etching or dry etching.

[0328] [Removal of Resist Mask 172] Next, the resist mask 172 is removed. The resist mask 172 can be removed in the same manner as the resist mask 143.

[0329] [Etching of Mask Film 174] Subsequently, using the mask layer 177 as a hard mask, a portion of the mask film 174 is removed by etching to form a mask layer 175 (FIG. 11A).

[0330] The mask film 174 can be etched by wet etching or dry etching.

[0331] [Etching of Semiconductor Film 155f] Subsequently, the active layer 112S is formed by removing a portion of the semiconductor film 155f that is not covered by the mask layer 175 (FIG. 11B), exposing the upper surfaces of the mask layer 147 and the connection electrode 111C.

[0332] The semiconductor film 155f can be etched by the same method as the etching of the organic compound film 112f described above.

[0333] Furthermore, a slit 119 is formed between the active layer 112S and the organic compound layer 112W. Between the active layer 112S and the organic compound layer 112W obtained through a processing step using photolithography, the width of the slit 119 indicated by the arrow in FIG. 11B can be 8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. The slit 119 preferably has the same width as the slit 118a or slit 118b between the subpixels, but the slit 119 may be wider than the slit 118a or slit 118b.

[0334] As shown by the slit 119, the organic compound layer 112W and the active layer 112S are separated, which can cut off the current leakage path. This suppresses leakage current (also called side leakage) between the organic compound layer 112W and the active layer 112S, enabling high-precision imaging with a high signal-to-noise ratio (S / N ratio). Therefore, clear imaging can be achieved even with weak light. This allows the brightness of the light-emitting device used as a light source during imaging to be reduced, thereby reducing power consumption.

[0335] Furthermore, in a display device in which a light-emitting device and a light-receiving device are combined, the organic compound layer can be processed, that is, patterned, only twice by the above process. By using the above method, the manufacturing process can be simplified and the productivity of the display device of one embodiment of the present invention can be improved.

[0336] Note that the insulating layer 104 is exposed when the semiconductor film 155f is etched. Therefore, a recess may be formed in the insulating layer 104 in a region overlapping with the slit 119. Note that if the formation of a recess is not desired, it is preferable to use a film that is highly resistant to etching of the semiconductor film 155f as the insulating layer 104. For example, it is preferable to use an insulating film containing an inorganic material as the insulating layer 104.

[0337] [Removal of Mask Layer] Subsequently, the mask layer 177 is removed to expose the upper surface of the mask layer 175 (FIG. 11C), while the mask layer 145 is left behind.

[0338] [Formation of Insulating Film 125f] Subsequently, an insulating film 125f is formed to cover the mask layer 145, the mask layer 175, and the connection electrode 111C (FIG. 12A).

[0339] The insulating film 125f functions as a barrier layer that prevents impurities such as water from diffusing into the organic compound layer 112W and the active layer 112S. The insulating film 125f is preferably formed by an ALD method, which has excellent step coverage, because it can suitably cover the side surfaces of the organic compound layer 112W and the active layer 112S.

[0340] The insulating film 125f is preferably the same film as the mask layers 145 and 175, because they can be easily removed simultaneously during etching in a later step. For example, the insulating film 125f, the mask layers 145, and the mask layers 175 are preferably made of one or more inorganic materials selected from aluminum oxide, hafnium oxide, silicon oxide, and the like, formed by the ALD method.

[0341] The material that can be used for the insulating film 125f is not limited to this, and for example, any material that can be used for the mask film 144 can be used appropriately.

[0342] [Formation of Insulating Layer 126] Next, the insulating layer 126 is formed in the regions overlapping with the slits 118a, 118b, and 119 ( FIG. 12A ). The insulating layer 126 can be formed by the same method as the resin layer 163. For example, the insulating layer 126 can be formed by forming a photosensitive resin, followed by exposure and development. The insulating layer 126 may also be formed by forming the resin over the entire surface, and then etching part of the resin by ashing or the like.

[0343] Here, the insulating layer 126 has a width greater than the widths of the slits 118a, 118b, and 119. Note that the insulating layer 126 is provided so that a part of the upper surface of the connection electrode 111C is exposed.

[0344] [Etching of the insulating film 125f, mask layer 145, and mask layer 175] Next, the insulating film 125f, mask layer 145, and mask layer 175 are etched away from the portions not covered by the insulating layer 126, exposing portions of the top surfaces of the organic compound layer 112W and the active layer 112S. This leaves the insulating layer 125, mask layer 145, and mask layer 175 in the areas overlapping the insulating layer 126 ( FIG. 12B ). The center of the insulating layer 126 is preferably positioned higher than the edges of the insulating layer 126, and the center preferably has a raised region relative to the edges. The top surface of the insulating layer 126 is preferably positioned higher than the top surface of the organic compound layer 112W. Furthermore, the edges of the insulating layer 126 preferably have a tapered shape.

[0345] The insulating film 125f, the mask layer 145, and the mask layer 175 are preferably etched in the same process. In particular, the mask layer 145 and the mask layer 175 are preferably etched by wet etching, which causes less etching damage to the organic compound layer 112W and the active layer 112S. For example, wet etching using a tetramethylammonium hydroxide solution (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof is preferably used.

[0346] Alternatively, it is preferable to remove at least one of the insulating film 125f, the mask layer 145, and the mask layer 175 by dissolving them in a solvent such as water or alcohol. Here, various alcohols such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin can be used as the alcohol capable of dissolving the insulating film 125f, the mask layer 145, and the mask layer 175.

[0347] After removing the insulating film 125f, the mask layer 145, and a portion of the mask layer 175, it is preferable to perform drying treatment to remove water contained inside the organic compound layer 112W, the active layer 112S, etc., and water adsorbed to the surfaces. For example, it is preferable to perform heat treatment in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0348] By removing a portion of the insulating film 125f, a portion of the upper surface of the connection electrode 111C is exposed.

[0349] [Formation of Common Layer 114] Subsequently, the common layer 114 is formed to cover the organic compound layer 112W, the active layer 112S, the insulating layer 125, the mask layer 145, the mask layer 175, the insulating layer 126, etc. (FIG. 12C).

[0350] The common layer 114 can be made of any of the materials that can be used for the electron injection layer described above, such as alkali metals, alkaline earth metals, or compounds thereof. The materials can also be composite materials of organic compounds and alkali metals or alkaline earth metals. Specifically, lithium fluoride (LiF) or composite materials containing NBPhen and Ag can be used.

[0351] The common layer 114 can be formed by the same method as the organic compound film 112f. The composite material can be formed by co-evaporation. When the common layer 114 is formed by evaporation, it is preferable to use an area mask to prevent the common layer 114 from being formed on the connection electrode 111C.

[0352] [Formation of Common Electrode 113] Subsequently, the common electrode 113 is formed to cover the common layer 114 (FIG. 12C).

[0353] The common electrode 113 can be formed by a film formation method such as evaporation or sputtering. Alternatively, a film formed by evaporation and a film formed by sputtering may be stacked.

[0354] The common electrode 113 is preferably formed so as to encompass the area where the common layer 114 is deposited.

[0355] The common electrode 113 can be formed using the same area mask as that used to form the common layer 114. In this case, the edge of the common layer 114 can be configured to overlap the edge of the common electrode 113.

[0356] In the connection portion 140, the common layer 114 may be located between the connection electrode 111C and the common electrode 113. In this case, it is preferable to use a material with as low an electrical resistance as possible for the common layer 114. Alternatively, it is preferable to form the common layer 114 as thin as possible to reduce the electrical resistance in the thickness direction of the common layer 114. For example, by using an electron-injecting or hole-injecting material with a thickness of 1 nm to 5 nm, preferably 1 nm to 3 nm, for the common layer 114, the electrical resistance between the connection electrode 111C and the common electrode 113 can be reduced to a negligible level.

[0357] [Formation of Auxiliary Wiring] Next, an auxiliary wiring layer 151f is formed on the common electrode 113 (FIG. 13A). When an organic material is used for the auxiliary wiring layer 151f, it is preferable to use a wet process for forming the auxiliary wiring layer containing the organic material. The auxiliary wiring 151 shown in FIGS. 1A to 1E can be formed by using an auxiliary wiring layer containing an organic material.

[0358] When an inorganic material is used for the auxiliary wiring layer 151f, it is preferable to use a sputtering method, a CVD method, a vacuum deposition method, etc. If a metal mask is used when using the sputtering method, the auxiliary wiring 151 as shown in FIG. 1D or 1E can be selectively formed.

[0359] A resist mask 123 is formed on the auxiliary wiring layer 151f at positions overlapping the lower electrode 111R, the lower electrode 111G, the lower electrode 111B, and the connection portion 140, and is then exposed to light and developed (FIG. 13B).

[0360] The resist mask 123 can be made of a resist material containing a photosensitive resin, such as a positive resist material or a negative resist material.

[0361] Thereafter, the auxiliary wiring layer 151f that is not covered with the resist mask 123 is removed by etching to form the auxiliary wiring 151 (FIG. 13C). The auxiliary wiring layer 151f can be etched by wet etching or dry etching.

[0362] The auxiliary wiring 151 is formed at a position overlapping with the insulating layer 126 in the pixel portion 103. The auxiliary wiring 151 formed in this manner is preferable because it does not reduce the aperture ratio of the display device.

[0363] The auxiliary wiring 151 is formed to have a region in contact with the common electrode 113. The auxiliary wiring 151 can suppress voltage drop and also exert the effect of suppressing stray light.

[0364] [Formation of Counter Substrate] Next, the substrate 170 is attached using an adhesive layer 171 (FIG. 14). When the display device has a hollow sealing structure, the substrate 170 may be attached using a sealant or the like. When the substrates are attached using a sealant, a space is generated, and the space is preferably filled with an inert gas (a gas containing nitrogen or argon).

[0365] The adhesive layer 171 may be made of an organic material such as a reaction-curing adhesive, a photo-curing adhesive, a thermosetting adhesive, and / or an anaerobic adhesive.

[0366] Specifically, adhesives containing epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. can be used for the adhesive layer 171, etc.

[0367] The substrate 170 is provided with a light-shielding layer 152, a colored layer 173R, a colored layer 173G, and a colored layer 173B. The light-shielding layer 152 is provided in a region overlapping with the insulating layer 126. The substrate 170 may be bonded so that the colored layer 173R, the colored layer 173G, and the colored layer 173B overlap with the lower electrode 111R, the lower electrode 111G, and the lower electrode 111B, respectively.

[0368] The colored layers 173R, 173G, and 173B can be formed at desired positions by etching using an inkjet method, photolithography, etc. Specifically, a different colored layer 173 (colored layer 173R, colored layer 173G, or colored layer 173B) can be formed for each pixel.

[0369] The white light emitted toward the common electrode 113 is colored by the coloring layer 173R, coloring layer 173G, or coloring layer 173B, as light in a predetermined wavelength range is absorbed, and is then emitted to the outside through the substrate 170, enabling full-color display.

[0370] The auxiliary wiring 151 may have a thickness that allows it to contact the colored layers 173 R, 173 G, and 173 B. The auxiliary wiring 151 can exert a stray light suppression effect.

[0371] In this manner, the display device shown in Modification 1 can be fabricated.

[0372] In the above description, the organic compound layer 112W and the active layer 112S are formed in this order, but the order of formation is not limited to this. The active layer 112S and the organic compound layer 112W may be formed in this order.

[0373] The display devices shown in Examples 1 to 7 and Modification 2 can also be fabricated according to the above description.

[0374] This completes the description of the example of the method for manufacturing the display device.

[0375] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0376] In this embodiment, a structural example of a display device according to one embodiment of the present invention will be described. In this embodiment, a pixel portion 103 having no light-receiving portion and having subpixels arranged in a stripe pattern will be described.

[0377] 15A to 15D are top views of the pixel portion 103 of the display device. The X direction and the Y direction intersecting the X direction are shown in Fig. 15A to 15D, and the arrangement of the components of the pixel portion 103 will be described using these directions.

[0378] The pixel unit 103 is located in the display region and has a plurality of pixels 150. The pixel unit 103 may have a protection circuit in addition to the pixels 150. The pixel 150 has at least sub-pixels 110R, 110G, and 110B. The sub-pixels 110R, 110G, and 110B correspond to the light-emitting regions of the respective light-emitting devices. For example, the sub-pixel 110R corresponds to the light-emitting region of a red (sometimes referred to as R) light-emitting device, the sub-pixel 110G corresponds to the light-emitting region of a green (sometimes referred to as G) light-emitting device, and the sub-pixel 110B corresponds to the light-emitting region of a blue (sometimes referred to as B) light-emitting device.

[0379] Note that the light-emitting colors of the display device of one embodiment of the present invention are not limited to the above; for example, the display device may have a white light-emitting region in addition to red, green, and blue light-emitting regions.

[0380] The sub-pixels 110R, 110G, and 110B may be arranged in a matrix (referred to as a matrix array). A matrix array is a regular array, and multiple sub-pixels 110R, 110G, and 110B are arranged throughout the pixel unit 103 according to the regular array shown in the pixel 150.

[0381] A full-color display is possible with a configuration including at least the sub-pixels 110R, 110G, and 110B. A pixel 150 is the smallest unit capable of a full-color display.

[0382] When describing matters common to the subpixels 110R, 110G, and 110B, they may be referred to as subpixel 110. Each subpixel 110 has a light-emitting device that emits one light color, as well as a switching element that controls the light-emitting device. The display device can perform full-color display by emitting light from the light-emitting device controlled by the switching element. To perform full-color display, each of the subpixels 110R, 110G, and 110B may have a colored layer, such as a color filter or a color conversion layer.

[0383] The arrangement of the auxiliary wiring 151 will be described with reference to Fig. 15A. The pixel 150 shown in Fig. 15A has sub-pixels 110R, 110G, and 110B, and the sub-pixels of the same color are arranged in a stripe pattern in the Y direction.

[0384] 15A is provided in a region that does not overlap with the subpixels, and has a strip shape along the Y direction in plan view. The strip-shaped auxiliary wiring 151 has a region located between the subpixels 110R and 110G. Furthermore, the strip-shaped auxiliary wiring 151 has a region located between the subpixels 110G and 110B. The distance (D) between the strip-shaped auxiliary wirings 151 is approximately equal to the width of each subpixel.

[0385] Although not shown in FIG. 15A, the common electrode is electrically connected to the auxiliary wiring 151 shown in FIG. 15A, thereby making it possible to suppress a voltage drop caused by the common electrode.

[0386] Next, auxiliary wiring having a different arrangement from that in FIG. 15A will be described using FIG. 15B. FIG. 15B shows a pixel 150 having the same arrangement as FIG. 15A. The auxiliary wiring 151 shown in FIG. 15B has a strip shape in a plan view, and has a region located between the subpixel 110R and the subpixel 110B belonging to the adjacent pixel. The distance (D) between the strip-shaped auxiliary wiring 151 is approximately equal to the width of the three subpixels, i.e., the width of the pixel 150.

[0387] Although not shown in FIG. 15B, the common electrode is electrically connected to the auxiliary wiring 151 shown in FIG. 15B, thereby making it possible to suppress a voltage drop caused by the common electrode.

[0388] Next, auxiliary wiring having a different arrangement from that in FIG. 15A will be described using FIG. 15C . FIG. 15C shows a pixel 150 having the same arrangement as FIG. 15A . The auxiliary wiring 151 shown in FIG. 15C has a lattice shape in a plan view. The auxiliary wiring 151 shown in FIG. 15C has a region extending along the X direction, which is located between the subpixels 110R. The auxiliary wiring 151 shown in FIG. 15C has a region extending along the Y direction, which is located between the subpixels 110R and 110G, and between the subpixels 110G and 110B. The distance (D) between the strip-shaped auxiliary wiring 151 is approximately equal to the width of each subpixel.

[0389] Although not shown in FIG. 15C, the common electrode is electrically connected to the auxiliary wiring 151 shown in FIG. 15C, thereby making it possible to suppress a voltage drop caused by the common electrode.

[0390] Next, auxiliary wiring having a different arrangement from that in FIG. 15A will be described using FIG. 15D . FIG. 15D shows a pixel 150 having the same arrangement as FIG. 15A . The auxiliary wiring 151 shown in FIG. 15D has a lattice shape in a plan view. The auxiliary wiring 151 shown in FIG. 15D has a region extending along the X direction, which is located between the subpixels 110R. The auxiliary wiring 151 shown in FIG. 15C has a region extending along the Y direction, which is located between the subpixels 110R and 110G, and between the subpixels 110G and 110B. The distance (D) between the strip-shaped auxiliary wirings 151 is approximately equal to the width of the three subpixels, i.e., the width of the pixel 150.

[0391] Although not shown in FIG. 15D, the common electrode is electrically connected to the auxiliary wiring 151 shown in FIG. 15D, thereby making it possible to suppress a voltage drop caused by the common electrode.

[0392] 15A to 15D are commonly arranged at positions that do not reduce the aperture ratio, etc. The auxiliary wiring 151 shown in Fig. 15A to 15D can suppress voltage drop.

[0393] 15A to 15D , the auxiliary wiring 151 is not limited to the arrangement shown in Fig. 15A to 15D because the aperture ratio or the like is not reduced even when the auxiliary wiring 151 overlaps with a subpixel when a light-transmitting conductive material is used for the auxiliary wiring 151. A combination of the light-transmitting conductive material and the auxiliary wiring 151 shown in Fig. 15A to 15D may be used as an auxiliary wiring having a stacked structure.

[0394] 2A to 2C can be used as the cross-sectional structure of the auxiliary wiring 151 etc. Specifically, the light-receiving device is removed from the configuration shown in FIGS. 2A to 2C and the light-emitting device 11B is provided.

[0395] [Specific Example] A display device according to one embodiment of the present invention will be described using an SBS structure that allows light-emitting devices that emit different colors of light to be fabricated.

[0396] 16A to 16C , a specific example 8 of a display device according to one embodiment of the present invention will be described. The display device 100 includes a pixel portion 103 and a connection portion 140. The pixel portion 103 includes a plurality of pixels 150. The pixel 150 includes a plurality of subpixels 110. For example, the subpixel 110R includes a light-emitting device 11R that exhibits red light, the subpixel 110G includes a light-emitting device 11G that exhibits green light, and the subpixel 110B includes a light-emitting device 11B that exhibits blue light.

[0397] In Fig. 16A, regions corresponding to the light-emitting device 11R, the light-emitting device 11G, and the light-emitting device 11B are labeled with the symbols R, G, and B. The arrangement in Fig. 16A is similar to the arrangement shown in Fig. 15A etc., and is a regular arrangement.

[0398] It is preferable to use elements such as OLEDs or QLEDs as the light-emitting devices 11R, 11G, and 11B. Examples of light-emitting materials that the light-emitting devices have include fluorescent materials, phosphorescent materials, inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescent materials).

[0399] 16B and 16C are cross-sectional views corresponding to dashed dotted lines A1-A2 and A3-A4 in FIG. 16A, respectively. FIG. 16B shows cross-sectional views of light-emitting device 11R, light-emitting device 11G, and light-emitting device 11B, and FIG. 16C shows a cross-sectional view of connection electrode 111C. The cross-sectional structure shown in FIG. 16C has a configuration similar to the cross-sectional structure shown in FIG. 3C. Auxiliary wiring 151 can be provided in connection section 140 in addition to pixel section 103.

[0400] 16A to 16C differ from FIGS. 3A to 3C in the thickness of the auxiliary wiring 151 (the distance indicated by Hc in FIG. 16B). The thickness of the auxiliary wiring 151 is preferably 50 nm to 500 nm, and more preferably 100 nm to 200 nm. The auxiliary wiring 151 can suppress voltage drop. Since the pixel portion does not have a light-receiving device, there is no need to consider stray light in this embodiment, and the thickness of the auxiliary wiring can be thin.

[0401] Except for the thickness of the auxiliary wiring 151, the eighth example is the same as the first example shown in FIGS. 3A to 3C.

[0402] [Specific Example 9] A specific example 9 of a display device according to one embodiment of the present invention will be described. In this specific example 9, the thickness of the auxiliary wiring 151 is the same as in specific example 8, and the insulating layer 126 has a flat upper portion and a tapered end portion as in specific example 2. The auxiliary wiring 151 can suppress a voltage drop.

[0403] [Specific Example 10] A specific example 10 of a display device according to one embodiment of the present invention will be described. In this specific example 10, the thickness of the auxiliary wiring 151 is the same as in specific example 8, and the auxiliary wiring 151 has a stacked structure as in specific example 3. The auxiliary wiring 151 can suppress a voltage drop.

[0404] [Specific Example 11] Specific Example 11 of a display device according to one embodiment of the present invention will be described. In Specific Example 11, the thickness of the auxiliary wiring 151 is the same as in Specific Example 8, and the auxiliary wiring 151 has a stacked structure as in Specific Example 4. The auxiliary wiring 151 can suppress a voltage drop.

[0405] [Specific Example 12] A specific example 12 of a display device according to one embodiment of the present invention will be described. In this specific example 12, the thickness of the auxiliary wiring 151 is the same as in specific example 8, and the light-shielding layer 152 is provided over the substrate 170 as in specific example 5. The auxiliary wiring 151 can suppress a voltage drop.

[0406] [Specific Example 13] A specific example 13 of a display device according to one embodiment of the present invention will be described. In this specific example 13, the thickness of the auxiliary wiring 151 is the same as in specific example 8, and the colored layer 173R and the colored layer 173G are provided on the substrate 170 as in specific example 6. In specific example 13, the colored layer 173B, which is not shown in specific example 6, is also provided. The auxiliary wiring 151 can suppress a voltage drop.

[0407] [Specific Example 14] A specific example 14 of a display device of one embodiment of the present invention will be described. In this specific example 14, the thickness of the auxiliary wiring 151 is the same as in specific example 8. As in specific example 7, the colored layers 173R and 173G are provided on the substrate 170, and the light-shielding layer 152 is provided in the region where the colored layers overlap each other. In specific example 10, the colored layer 173B, which is not shown in specific example 7, is also provided. The auxiliary wiring 151 can suppress a voltage drop.

[0408] Modification 3 of the display device of one embodiment of the present invention will be described. Modification 3 is mainly different from the configuration of Example 8 in that a white light-emitting device is included. The auxiliary wiring 151 can suppress a voltage drop.

[0409] Modification 4 A modification 4 of the display device of one embodiment of the present invention will be described. Modification 4 is an example in which a light-blocking layer 152 is applied to the structure of Modification 3. The auxiliary wiring 151 can suppress a voltage drop.

[0410] The above is a description of the modified example.

[0411] The display device described above can suppress crosstalk due to leakage current and can achieve both a high aperture ratio and high definition. Therefore, the display device can be suitably used for an ultra-small display (microdisplay) for a head-mounted display. The display device of one embodiment of the present invention can be applied to a wide range of displays, from ultra-small displays of less than 1 inch to ultra-large displays of more than 100 inches.

[0412] [Light-Emitting Device] Next, the materials that can be used for the light-emitting device are the same as those in the above-described embodiment.

[0413] [Layout] The following mainly describes pixel layouts that differ from those in FIG. 15A.

[0414] Examples of the top surface shape of the sub-pixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, a circle, etc. The top surface shape of the sub-pixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0415] 17A has auxiliary wiring 151, and pixel 150 has three sub-pixels: light-emitting device 11a, light-emitting device 11b, and light-emitting device 11c. The arrangement of light-emitting device 11a, light-emitting device 11b, and light-emitting device 11c shown in FIG. 17A is sometimes referred to as an S-stripe arrangement. The auxiliary wiring 151 is positioned so as not to overlap with light-emitting devices 11a to 11c, and has, for example, a region positioned between light-emitting device 11a and light-emitting device 11b, and a region positioned between light-emitting device 11a and light-emitting device 11c.

[0416] For example, as shown in FIG. 18A, the light emitting device 11a may be a blue light emitting device 11B, the light emitting device 11b may be a red light emitting device 11R, and the light emitting device 11c may be a green light emitting device 11G.

[0417] The pixel portion 103 shown in FIG. 17B has an auxiliary wiring 151, and the pixel 150 includes a light-emitting device 11a having a substantially trapezoidal top surface shape with rounded corners, a light-emitting device 11b having a substantially triangular top surface shape with rounded corners, and a light-emitting device 11c having a substantially rectangular or hexagonal top surface shape with rounded corners. The light-emitting device 11a has a larger light-emitting area than the light-emitting device 11b. In this manner, the shape and size of each light-emitting device can be determined independently. For example, the more reliable the light-emitting device, the smaller the size can be. The auxiliary wiring 151 is positioned so as not to overlap with the light-emitting devices 11a to 11c, and has a region located between the light-emitting devices 11b and 11c, for example.

[0418] For example, as shown in FIG. 18B, the light emitting device 11a may be a green light emitting device 11G, the light emitting device 11b may be a red light emitting device 11R, and the light emitting device 11c may be a blue light emitting device 11B.

[0419] The pixel unit 103 shown in Figure 17C has auxiliary wiring 151, and the subpixels are arranged in a Pentile arrangement. Figure 17C shows an example in which a pair of subpixels 124a having a light-emitting device 11a and a light-emitting device 11b and a pair of subpixels 124b having a light-emitting device 11b and a light-emitting device 11c are alternately arranged. The auxiliary wiring 151 is positioned so as not to overlap with the light-emitting devices 11a to 11c, and has, for example, a region located between the light-emitting devices 11a and 11b and a region located between the light-emitting devices 11b and 11c.

[0420] For example, as shown in FIG. 18C, the light emitting device 11a may be a red light emitting device 11R, the light emitting device 11b may be a green light emitting device 11G, and the light emitting device 11c may be a blue light emitting device 11B.

[0421] 17D includes auxiliary wiring 151, and pixels 150a and 150b are arranged in a delta configuration. Pixel 150a includes two light-emitting devices (light-emitting device 11a and light-emitting device 11b) in the top row (first row) and one light-emitting device (light-emitting device 11c) in the bottom row (second row). Pixel 150b includes one light-emitting device (light-emitting device 11c) in the top row (first row) and two light-emitting devices (light-emitting device 11a and light-emitting device 11b) in the bottom row (second row). The auxiliary wiring 151 is positioned so as not to overlap with the light-emitting devices 11a to 11c, and includes, for example, a region located between light-emitting device 11a and light-emitting device 11b and a region located between light-emitting device 11b and light-emitting device 11c.

[0422] For example, as shown in FIG. 18D, the light emitting device 11a may be a red light emitting device 11R, the light emitting device 11b may be a green light emitting device 11G, and the light emitting device 11c may be a blue light emitting device 11B.

[0423] 17E shows an example of a pixel unit 103 having auxiliary wiring 151 and in which light-emitting devices of each color are arranged in a zigzag pattern. Specifically, in a plan view, the positions of the upper edges of two light-emitting devices (e.g., light-emitting device 11a and light-emitting device 11b, or light-emitting device 11b and light-emitting device 11c) arranged in a column direction are offset. The auxiliary wiring 151 is positioned so as not to overlap with the light-emitting devices 11a to 11c, and has, for example, a region located between the light-emitting devices 11a and 11b and a region located between the light-emitting devices 11b and 11c.

[0424] For example, as shown in FIG. 18E, the light emitting device 11a may be a red light emitting device 11R, the light emitting device 11b may be a green light emitting device 11G, and the light emitting device 11c may be a blue light emitting device 11B.

[0425] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the resist mask pattern when transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the resist mask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the light-emitting device may become polygonal with rounded corners, elliptical, circular, or the like.

[0426] Furthermore, in a method for manufacturing a display device according to one embodiment of the present invention, an organic compound layer is processed using a resist mask. The resist mask formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the material for the organic compound layer and the curing temperature of the resist material, curing for forming the resist mask may be insufficient. A resist mask that is insufficiently cured may have a shape different from the desired shape during processing. As a result, the top surface shape of the organic compound layer may be a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the organic compound layer.

[0427] In order to make the top surface of the organic compound layer have a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0428] This concludes the description of the pixel layout.

[0429] 19A to 22B, an example of a method for manufacturing the display device of the above-described specific example 8 will be described. In the drawings, the pixel portion 103 is shown on the left side, and the connection portion 140 is shown on the right side.

[0430] [Preparation of substrate] [Formation of conductive layer 161, resin layer 163, conductive layer 162, and lower electrode 111] A substrate is prepared in the same manner as in embodiment 1 above, and an insulating layer 104 is provided on the substrate. Thereafter, conductive layer 161, resin layer 163, conductive layer 162, lower electrode 111R, lower electrode 111G, lower electrode 111B, and connection electrode 111C are formed (Figure 19A).

[0431] [Deposition of Organic Compound Film] An organic compound film 112fR capable of emitting red light is deposited to cover the lower electrode 111 and the connection electrode 111C (FIG. 19B). The organic compound film 112fR may have a single structure or a tandem structure. The organic compound film 112fR is formed by laminating functional layers, and each functional layer can be deposited by a vacuum deposition method. However, the organic compound film 112fR is not limited to this, and can also be deposited by a sputtering method, an inkjet method, or the like.

[0432] 19B, the organic compound film 112fR is formed so as to cover the connection electrode 111C, but the present invention is not limited to this. For example, by using an area mask to define the film formation area, the film formation area of ​​the organic compound film 112fR may be set inside the connection portion 140 so that the organic compound film 112fR does not overlap the connection electrode 111C. This is preferable because it is possible to prevent the connection electrode 111C from coming into contact with the organic compound film 112fR and, further, the remover used to remove the organic compound film 112fR does not come into contact with the surface of the connection electrode 111C.

[0433] The organic compound film 112fR may be separately formed using a fine metal mask. In this case, the organic compound film 112fR is preferably formed so as to cover only the lower electrode 111R. This prevents the lower electrode 111G, the lower electrode 111B, and the connection electrode 111C from contacting the organic compound film 112fR. Furthermore, when removing the organic compound film 112fR, the remover does not come into contact with the surfaces of the lower electrode 111G, the lower electrode 111B, and the connection electrode 111C, which is preferable.

[0434] The organic compound film 112fR has various functional layers, and may be a laminate having, in this order from the lower electrode 111, at least a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer, for example.

[0435] One of the functional layers is an electron injection layer located on the electron transport layer. In this embodiment, the electron injection layer is formed later to serve as a common layer. The common layer may be any functional layer located between the light-emitting layer and the common electrode. Of course, all functional layers may be separated into subpixels without providing a common layer.

[0436] The electron transport layer located at the top of the organic compound film 112fR is exposed to a processing process using photolithography to obtain the processed organic compound layer 112. Therefore, it is preferable to use a material having high heat resistance for the electron transport layer. As a material having high heat resistance, for example, a material having a glass transition point of 110° C. or higher and 165° C. or lower, preferably 120° C. or higher and 135° C. or lower, is preferably used.

[0437] The electron transport layer exposed to processing may have a laminated structure. An example of such a laminated structure is a structure in which a second electron transport layer is laminated on a first electron transport layer. Because the first electron transport layer is covered with the second electron transport layer for a period during processing, the first electron transport layer may have lower heat resistance than the second electron transport layer. For example, the second electron transport layer may be made of a material having a glass transition point of 110°C or higher and 165°C or lower, preferably 120°C or higher and 135°C or lower, and the first electron transport layer may be made of a material having a glass transition point lower than that of the second electron transport layer, for example, 100°C or higher and 155°C or lower, preferably 110°C or higher and 125°C or lower.

[0438] Although it is possible to use the top layer of the organic compound film 112fR as the light-emitting layer, damage caused by this processing may penetrate into the light-emitting layer, significantly impairing reliability. Therefore, when manufacturing a display device according to one embodiment of the present invention, it is recommended to perform the above processing after forming a functional layer (e.g., an electron transport layer) above the light-emitting layer. A mask layer or the like may also be formed on the organic compound film to prevent damage caused by processing from penetrating into the light-emitting layer. By applying this method, a highly reliable display panel can be provided.

[0439] [Deposition of Mask Film 144R and Mask Film 146R] Subsequently, a mask film 144R is formed to cover the organic compound film 112fR, and a mask film 146R is formed to cover the mask film 144R (FIG. 19C). The mask film 144R has at least the function of protecting the organic compound film 112fR during the etching process of the organic compound film 112fR.

[0440] The mask film 144 and the mask film 146 described in the first embodiment can be used as the mask film 144R and the mask film 146R.

[0441] [Formation of Resist Mask 143R] Subsequently, a resist mask 143R is formed on the mask film 146R in a region overlapping with the lower electrode 111R (FIG. 20A). The resist mask 143 described in the first embodiment can be used as the resist mask 143R.

[0442] [Etching of Mask Film 146R] Subsequently, a portion of the mask film 146R that is not covered by the resist mask 143R is removed by etching to form a mask layer 147R (FIG. 20B). The etching of the mask film 146R can be performed under the same conditions as those for the mask film 146 described in the first embodiment.

[0443] [Removal of Resist Mask 143R] Subsequently, the resist mask 143R is removed (FIG. 20B). The removal of the resist mask 143R can be performed using the same method as described in the first embodiment for removing the resist mask 143.

[0444] [Etching of Mask Film 144R] Subsequently, the mask film 144R is partially etched using the mask layer 147R as a hard mask to form a mask layer 145R (FIG. 20B).

[0445] The etching conditions for the mask film 144R may be the same as those for the mask film 144 described in the first embodiment.

[0446] [Etching of the organic compound film 112fR] Subsequently, a portion of the organic compound film 112fR that is not covered by the mask layer 145R is removed by etching to form an independent organic compound layer 112R (FIG. 20C). It is preferable that at least a highly heat-resistant functional layer, such as an electron transport layer, be located on the outermost surface of the organic compound layer 112R.

[0447] The organic compound film 112fR can be etched under the same conditions as those for the organic compound film 112f described in Embodiment 1. At this time, the organic compound film 112fR on the lower electrode 111G, the lower electrode 111B, and the connection electrode 111C is removed, and the lower electrode 111G, the lower electrode 111B, and the connection electrode 111C are exposed.

[0448] In this manner, the organic compound layer 112R can be formed from the organic compound film 112fR.

[0449] [Deposition and Etching of Organic Compound Film 112fG] In the same manner as forming the organic compound layer 112R from the organic compound film 112fR, the organic compound film 112fG is formed, and although not shown, mask films 144G and 146G are also formed, the mask film 146G is processed to form a mask layer 147G, the mask film 144G is processed using the mask layer 147G to form a mask layer 145G, and although not shown, the organic compound film 112fG is also processed using the mask layer 145G to form the organic compound layer 112G ( FIG. 21A ). A highly heat-resistant functional layer, for example, an electron transport layer, is preferably located on the outermost surface of the organic compound layer 112G.

[0450] At this time, the upper surface of the connection electrode 111C is exposed.

[0451] Before forming the organic compound film 112fG, heat treatment may be performed in vacuum at 70° C. to 90° C. for 15 minutes to 60 minutes, which can remove water or the like adsorbed on the surface where the organic compound film 112fG is to be formed.

[0452] In this manner, the organic compound layer 112G can be formed from the organic compound film 112fG.

[0453] [Deposition and Etching of Organic Compound Film 112fB] In the same manner as forming the organic compound layer 112R from the organic compound film 112fR, the organic compound film 112fB is formed, and although not shown, mask films 144B and 146B are also formed, the mask film 146B is processed to form a mask layer 147B, the mask film 144B is processed using the mask layer 147B to form a mask layer 145B, and although not shown, the organic compound film 112fB is also processed using the mask layer 145B to form the organic compound layer 112B ( FIG. 21A ). A highly heat-resistant functional layer, for example, an electron transport layer, is preferably located on the outermost surface of the organic compound layer 112B.

[0454] At this time, the upper surface of the connection electrode 111C is exposed.

[0455] Before forming the organic compound film 112fB, heat treatment may be performed in vacuum at 70° C. to 90° C. for 15 minutes to 60 minutes, which can remove water or the like adsorbed on the surface where the organic compound film 112fB is to be formed.

[0456] In this manner, the organic compound layer 112B can be formed from the organic compound film 112fB.

[0457] Note that the insulating layer 104 is exposed when the organic compound films 112fR, 112fG, and 112fB are etched. Therefore, recesses may be formed in the insulating layer 104 in regions overlapping with the slits 118a and 118b. Note that if the formation of recesses is not desired, it is preferable to use a film that is highly resistant to the etching process of the organic compound films 112fR, 112fG, and 112fB for the insulating layer 104. For example, it is preferable to use an insulating film containing an inorganic material for the insulating layer 104.

[0458] Furthermore, slits 118a and 118b are formed between the organic compound layers 112R, 112G, and 112B. The organic compound layer 112 obtained through a photolithography process can have widths of the slits 118a and 118b, indicated by arrows in FIG. 21A, of 8 μm or less, 3 μm or less, 2 μm or less, or 1 μm or more. The widths of the slits 118a and 118b correspond to the distance between each subpixel. By narrowing the distance between each subpixel, a display device with high definition and a large aperture ratio can be provided. The widths of the slits 118a and 118b do not need to be constant. For example, the width of the slit 118a may be larger than the width of the slit 118b. Furthermore, the width of the slit 118b may be larger than the width of the slit 118a.

[0459] As shown by the slits 118 a and 118 b, adjacent organic compound layers 112 are separated, and the leakage path of current is divided, thereby suppressing leakage current (also referred to as side leakage current). This makes it possible to increase the luminance, contrast, display quality, power efficiency, or power consumption of the light-emitting device.

[0460] [Removal of Mask Layers] Subsequently, the mask layers 147R, 147G, and 147B are removed to expose the upper surfaces of the mask layers 145R, 145G, and 145B.

[0461] [Formation of insulating film 125f] Subsequently, insulating film 125f is formed to cover mask layer 145R, mask layer 145G, mask layer 145B, and connection electrode 111C. Insulating film 125f can be formed in the same manner as insulating film 125f described in the first embodiment (see FIG. 12A described in the first embodiment).

[0462] [Formation of Insulating Layer 126] Subsequently, insulating layer 126 is formed in the region overlapping with slits 118a and slits 118b. Insulating layer 126 can be formed in the same manner as insulating layer 126 described in Embodiment 1 (see FIG. 12A described in Embodiment 1).

[0463] [Etching of insulating film 125f, mask layer 145R, mask layer 145G, and mask layer 145B] Subsequently, portions of insulating film 125f, mask layer 145R, mask layer 145G, and mask layer 145B that are not covered by insulating layer 126 are removed by etching to expose a portion of the upper surface of organic compound layer 112, thereby forming insulating layer 125. The etching conditions for insulating film 125f, mask layer 145R, mask layer 145G, and mask layer 145B may be the same as those for insulating film 125f, mask layer 145, etc. described in the first embodiment.

[0464] By removing a portion of the insulating film 125f, a portion of the upper surface of the connection electrode 111C is exposed.

[0465] [Formation of Common Layer 114] Subsequently, the common layer 114 is formed in the same manner as in the first embodiment to cover the organic compound layer 112R, the organic compound layer 112G, the organic compound layer 112B, the insulating layer 126, and the like (FIG. 21B).

[0466] [Formation of Common Electrode 113] Subsequently, the common electrode 113 is formed to cover the common layer 114 in the same manner as in the first embodiment (FIG. 21B).

[0467] [Formation of Auxiliary Wiring] Subsequently, auxiliary wiring 151 is formed on the common electrode 113 ( FIG. 22A ). In this embodiment, the auxiliary wiring 151 is selectively formed on the common electrode 113 using a mask 135. For example, the auxiliary wiring 151 can be formed by a sputtering method. If a metal mask is used when using the sputtering method, the auxiliary wiring 151 can be selectively formed as shown in FIG. 1D or 1E .

[0468] The auxiliary wiring 151 is formed at a position overlapping with the insulating layer 126 in the pixel portion 103. The auxiliary wiring 151 formed in this manner is preferable because it does not reduce the aperture ratio of the display device.

[0469] The auxiliary wiring 151 is formed to have a region in contact with the common electrode 113. Therefore, the voltage drop caused by the common electrode 113 can be suppressed.

[0470] [Formation of Counter Substrate] Substrate 170 is bonded using adhesive layer 171 in the same manner as in the first embodiment (FIG. 22B).

[0471] Although not shown, the substrate 170 may be provided with the light-shielding layer 152, the colored layer 173R, the colored layer 173G, and the colored layer 173B, similar to the first embodiment.

[0472] In this manner, a display device can be manufactured.

[0473] The display devices shown in Examples 9 to 14 and Modifications 3 and 4 can also be fabricated according to the above description.

[0474] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0475] Embodiment 3 In this embodiment, a display device according to one embodiment of the present invention will be described with reference to drawings.

[0476] [Specific Example of Display Device] A large-scale display device using a plurality of display modules DP each having the display device described in the above embodiment and an FPC 74 will be described with reference to FIGS. 23A to 23C. FIG.

[0477] 23A shows a top view of the display module DP. The display module DP has a region 72 adjacent to the pixel portion 103 that transmits visible light and a region 73 that blocks visible light.

[0478] 23B and 23C are perspective views of a display device having four display modules DP. By arranging the multiple display modules DP in one or more directions (for example, in a line or in a matrix), a large display device having a wide display area can be manufactured.

[0479] When a large display device is manufactured using multiple display modules DP, the size of each display module DP does not need to be large. Therefore, the manufacturing equipment for manufacturing the display module DP does not need to be large, and space can be saved. Furthermore, manufacturing equipment for small and medium-sized display panels can be used, and new manufacturing equipment does not need to be used to enlarge the display device, thereby reducing manufacturing costs. Furthermore, the decrease in yield due to the enlargement of the display module DP can be suppressed.

[0480] A non-display area where wiring and the like are routed is located on the periphery of the pixel unit 103. The non-display area corresponds to the area 73 that blocks visible light. When multiple display modules DP are stacked, the non-display area and the like may cause a single image to be viewed as if it were separated.

[0481] Therefore, in one embodiment of the present invention, a region 72 that transmits visible light is provided in the display module DP, and in two overlapping display modules, the pixel portion 103 of the display module DP located on the lower side is overlapped with the region 72 that transmits visible light of the display module DP located on the upper side.

[0482] By providing the visible light transmitting region 72 in this manner, it is not necessary to actively reduce the non-display region of the display module DP. However, when two display modules DP are stacked, the non-display region is reduced, which is preferable. This allows for the realization of a large display device in which the seams between the display modules DP are difficult for users to notice.

[0483] The display module DP located on the upper side may have a region 72 that transmits visible light in at least a part of the non-display region. The region 72 that transmits visible light can be overlapped with the pixel unit 103 of the display module DP located on the lower side.

[0484] Furthermore, at least a part of the non-display region of the display module DP located on the lower side overlaps with the pixel section 103 or the region 73 that blocks visible light of the display module DP located on the upper side.

[0485] If the non-display area of ​​the display module DP is wide, the distance between the edge of the display module DP and the elements within the display module DP becomes long, which is preferable because it can prevent the elements from being deteriorated by impurities entering from outside the display module DP.

[0486] In this way, when a plurality of display modules DP are provided in a display device, the pixel portions 103 are continuous between adjacent display modules DP, so that a display region with a large area can be provided.

[0487] The pixel section 103 includes a plurality of pixels.

[0488] The region 72 that transmits visible light may be provided with a resin material or the like for sealing the pair of substrates that constitute the display module DP and the display elements sandwiched between the pair of substrates. In this case, a material that is translucent to visible light is used for the member provided in the region 72 that transmits visible light.

[0489] The region 73 that blocks visible light may be provided with wirings or the like electrically connected to pixels included in the pixel portion 103. The region 73 that blocks visible light may also be provided with one or both of a scanning line driver circuit and a signal line driver circuit. The region 73 that blocks visible light may also be provided with terminals connected to the FPC 74, wirings or the like connected to the terminals.

[0490] 23B and 23C show examples in which the display modules DP shown in Fig. 23A are arranged in a 2 × 2 matrix (two in the vertical direction and two in the horizontal direction). Fig. 23B is a perspective view of the display surface side of the display module DP, and Fig. 23C is a perspective view of the side opposite to the display surface of the display module DP.

[0491] The four display modules DP (display modules DPa, DPb, DPc, and DPd) are arranged so as to have overlapping regions. Specifically, the display modules DPa, DPb, DPc, and DPd are arranged so that the region 72 that transmits visible light of one display module DP has a region that overlaps with the pixel unit 103 (display surface side) of the other display modules DP. Furthermore, the display modules DPa, DPb, DPc, and DPd are arranged so that the region 73 that blocks visible light of one display module DP does not overlap with the pixel unit 103 of the other display modules DP. In the overlapping portions of the four display modules DP, the display module DPb overlaps with the display module DPa, the display module DPc overlaps with the display module DPb, and the display module DPd overlaps with the display module DPc.

[0492] The short sides of the display modules DPa and DPb overlap each other, so that part of the pixel unit 103a overlaps with part of the region 72b that transmits visible light, and the long sides of the display modules DPa and DPc overlap each other, so that part of the pixel unit 103a overlaps with part of the region 72c that transmits visible light.

[0493] A part of the pixel portion 103b overlaps with a part of the region 72c that transmits visible light and a part of the region 72d that transmits visible light. Also, a part of the pixel portion 103c overlaps with a part of the region 72d that transmits visible light.

[0494] Therefore, a region where the pixel portions 103 a to 103 d are arranged almost seamlessly can be used as a display region 79 .

[0495] Here, the display module DP is preferably flexible, for example, the pair of substrates constituting the display module DP are preferably flexible.

[0496] As a result, for example, as shown in Figures 23B and 23C, the vicinity of the FPC 74a of the display module DPa can be curved, and a portion of the display module DPa and a portion of the FPC 74a can be arranged below the pixel unit 103b of the display module DPb adjacent to the FPC 74a. As a result, the FPC 74a can be arranged without physically interfering with the rear surface of the display module DPb. Furthermore, when the display modules DPa and DPb are stacked and fixed, the thickness of the FPC 74a does not need to be taken into consideration, so the difference in height between the top surface of the visible light-transmitting region 72b and the top surface of the display module DPa can be reduced. As a result, the edge of the display module DPb located above the pixel unit 103a can be made less noticeable.

[0497] Furthermore, by providing flexibility to each display module DP, the display module DPb can be gently curved so that the height of the upper surface of the pixel portion 103b of the display module DPb matches the height of the upper surface of the pixel portion 103a of the display module DPa. This makes it possible to align the heights of the display areas except for the area near where the display modules DPa and DPb overlap, thereby improving the display quality of the image displayed in the display area 79.

[0498] Although the relationship between the display module DPa and the display module DPb has been described above as an example, the same applies to any other two adjacent display modules DP.

[0499] In order to reduce the step between two adjacent display modules DP, it is preferable that the thickness of the display module DP is thin. For example, the thickness of the display module DP is preferably 1 mm or less, more preferably 300 μm or less, and even more preferably 100 μm or less.

[0500] The display module DP preferably incorporates both a scanning line driver circuit and a signal line driver circuit. When the driver circuit is arranged separately from the display panel, a printed circuit board including the driver circuit, numerous wirings, terminals, etc., are arranged on the back side of the display panel (the side opposite the display surface). This can result in a huge number of components in the entire display device, which can increase the weight of the display device. By incorporating both a scanning line driver circuit and a signal line driver circuit in the display module DP, the number of components in the display device can be reduced, making the display device lighter. This can increase the portability of the display device.

[0501] Here, the scanning line driver circuit and the signal line driver circuit are required to operate at a high driving frequency according to the frame frequency of the image to be displayed. In particular, the signal line driver circuit is required to operate at a driving frequency even higher than that of the scanning line driver circuit. Therefore, some of the transistors used in the signal line driver circuit may be required to have the ability to pass a large current. On the other hand, some of the transistors provided in the pixel portion may be required to have sufficient voltage resistance to drive the display element.

[0502] Therefore, it is preferable to differentiate the structures of the transistors in the driver circuit from those in the pixel portion, for example, by using a high-voltage transistor as one or more of the transistors in the pixel portion and using a transistor with a high driving frequency as one or more of the transistors in the driver circuit.

[0503] In a more specific configuration, one or more transistors used in the signal line driver circuit have a thinner gate insulating layer than a transistor used in a pixel portion. By fabricating two types of transistors in this way, the signal line driver circuit can be fabricated over a substrate on which a pixel portion is provided.

[0504] In addition, it is preferable that a metal oxide be used as a semiconductor in which a channel is formed in each of the transistors applied to the scan line driver circuit, the signal line driver circuit, and the pixel portion.

[0505] In addition, it is preferable that silicon be used as a semiconductor in which a channel is formed in each of the transistors applied to the scan line driver circuit, the signal line driver circuit, and the pixel portion.

[0506] In addition, it is preferable that each transistor applied to the scan line driver circuit, the signal line driver circuit, and the pixel portion be a combination of a semiconductor in which a channel is formed using a metal oxide and a semiconductor in which a channel is formed using silicon.

[0507] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0508] Embodiment 4 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0509] The display device of the present embodiment can be a high-definition display device, and therefore can be used as a display unit of a wearable device that can be worn on the head, such as a wristwatch-type or bracelet-type information terminal (wearable device), a head-mounted display or other VR (Virtual Reality) device, or a glasses-type AR (Augmented Reality) device.

[0510] 24A shows a perspective view of a display module 280. The display module 280 includes the display device 100 and an FPC 290.

[0511] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a pixel portion 103. The pixel portion 103 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in the pixel portion 103, which will be described later, can be viewed.

[0512] 24B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 103 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 (sometimes referred to as an FPC terminal portion) for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 103. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0513] The pixel section 103 has a plurality of periodically arranged pixels 150. An enlarged view of one pixel 150 is shown on the right side of Fig. 24B. The pixel 150 has a light-emitting device 11R, a light-emitting device 11G, and a light-emitting device 11B that emit light of different colors. The pixel 150 may further have a light-receiving device 11S. The plurality of light-emitting devices may be arranged in a stripe array as shown in Fig. 24B. Various light-emitting device arrangement methods, such as a delta array or a pentile array, may also be applied.

[0514] The pixel circuit section 283 includes pixel circuits 283a each having a plurality of periodically arranged transistors and the like.

[0515] One pixel circuit 283a is a circuit that controls the light emission of a light-emitting device included in one pixel 150. One pixel circuit 283a may be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a may be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active matrix display device.

[0516] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0517] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0518] The display module 280 can have a configuration in which one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 103, thereby enabling the aperture ratio (effective display area ratio) of the pixel unit 103 to be extremely high. For example, the aperture ratio of the pixel unit 103 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 150 can be arranged at an extremely high density, enabling the resolution of the pixel unit 103 to be extremely high. For example, it is preferable that the pixels 150 are arranged in the pixel unit 103 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0519] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has extremely fine pixel units 103, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0520] 25A shows a block diagram of a display device 10. The display device 10 includes a pixel portion 103, a driver circuit portion 12, a driver circuit portion 13, and the like.

[0521] The pixel unit 103 has a plurality of pixels 150 arranged in a matrix. Each pixel 150 has sub-pixels 110R, 110G, and 110B. Each of the sub-pixels 110R, 110G, and 110B has a light-emitting device that functions as a display device.

[0522] The pixel 150 is electrically connected to a wiring GL, a wiring SLR, a wiring SLG, and a wiring SLB. The wirings SLR, SLG, and SLB are each electrically connected to a driver circuit unit 12. The wiring GL is electrically connected to a driver circuit unit 13. The driver circuit unit 12 functions as a source line driver circuit (also referred to as a source driver), and the driver circuit unit 13 functions as a gate line driver circuit (also referred to as a gate driver). The wiring GL functions as a gate line, and the wirings SLR, SLG, and SLB function as source lines.

[0523] Sub-pixel 110R has a light-emitting device that emits red light. Sub-pixel 110G has a light-emitting device that emits green light. Sub-pixel 110B has a light-emitting device that emits blue light. This allows the display device 10 to display full color. Note that pixel 150 may also have sub-pixels that have light-emitting devices that emit light of other colors. For example, in addition to the above three sub-pixels, pixel 150 may also have a sub-pixel that has a light-emitting device that emits white light, or a sub-pixel that has a light-emitting device that emits yellow light, etc.

[0524] The line GL is electrically connected to the sub-pixels 110R, 110G, and 110B arranged in the row direction (extension direction of the line GL). The line SLR, line SLG, and line SLB are electrically connected to the sub-pixels 110R, 110G, and 110B (not shown) arranged in the column direction (extension direction of the line SLR, etc.), respectively.

[0525] [Configuration Example of Pixel Circuit] Figure 25B shows an example of a circuit diagram of a pixel 150 that can be applied to the subpixels 110R, 110G, and 110B. The pixel 150 includes a transistor M1, a transistor M2, a transistor M3, a capacitor C1, and a light-emitting device EL. A wiring GL and a wiring SL are electrically connected to the pixel 150. The wiring SL corresponds to any one of the wirings SLR, SLG, and SLB shown in Figure 25A.

[0526] The transistor M1 has a gate electrically connected to a wiring GL, one of a source and a drain electrically connected to a wiring SL, and the other electrically connected to one electrode of a capacitor C1 and the gate of the transistor M2. The transistor M2 has one of a source and a drain electrically connected to a wiring AL, and the other of a source and a drain electrically connected to one electrode of a light-emitting device EL, the other electrode of the capacitor C1, and one of a source and a drain of the transistor M3. The transistor M3 has a gate electrically connected to a wiring GL, and the other of a source and a drain electrically connected to a wiring RL. The light-emitting device EL has the other electrode electrically connected to a wiring CL.

[0527] A data potential is applied to the wiring SL. A selection signal is applied to the wiring GL. The selection signal includes a potential that turns on a transistor and a potential that turns off a transistor.

[0528] A reset potential is applied to the wiring RL. An anode potential is applied to the wiring AL. A cathode potential is applied to the wiring CL. In the pixel 150, the anode potential is higher than the cathode potential. The reset potential applied to the wiring RL can be a potential such that the potential difference between the reset potential and the cathode potential is smaller than the threshold voltage of the light-emitting device EL. The reset potential can be a potential higher than the cathode potential, the same as the cathode potential, or a potential lower than the cathode potential.

[0529] The transistors M1 and M3 function as switches. The transistor M2 functions as a transistor for controlling the current flowing through the light-emitting device EL. For example, it can be said that the transistor M1 functions as a selection transistor and the transistor M2 functions as a drive transistor.

[0530] Here, it is preferable that all of the transistors M1 to M3 be LTPS transistors. Alternatively, it is preferable that the transistors M1 and M3 be OS transistors and the transistor M2 be an LTPS transistor.

[0531] Alternatively, OS transistors may be used for all of the transistors M1 to M3. In this case, an LTPS transistor may be used for one or more of the transistors included in the driver circuit portion 12 and the transistors included in the driver circuit portion 13, and OS transistors may be used for the remaining transistors. For example, an OS transistor may be used for the transistor provided in the pixel portion 103, and an LTPS transistor may be used for the transistors provided in the driver circuit portion 12 and the driver circuit portion 13.

[0532] As the OS transistor, a transistor including an oxide semiconductor for a semiconductor layer in which a channel is formed can be used. The semiconductor layer preferably contains, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin. In particular, an oxide containing indium, gallium, and zinc (also referred to as IGZO) is preferably used for the semiconductor layer of the OS transistor. Alternatively, an oxide containing indium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used.

[0533] A transistor using an oxide semiconductor, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use transistors including an oxide semiconductor for each of the transistors M1 and M3 connected in series with the capacitor C1. Using transistors including an oxide semiconductor as the transistors M1 and M3 can prevent charge held in the capacitor C1 from leaking through the transistor M1 or M3. Furthermore, because charge held in the capacitor C1 can be held for a long period of time, a still image can be displayed for a long period of time without rewriting data in the pixel 150.

[0534] Note that although the transistors are shown as n-channel transistors in FIG. 25B, p-channel transistors can also be used.

[0535] In addition, the transistors included in the pixel 150 are preferably formed side by side on the same substrate.

[0536] As the transistor included in the pixel 150, a transistor having a pair of gates overlapping with each other with a semiconductor layer interposed therebetween can be used.

[0537] In a transistor having a pair of gates, when the pair of gates are electrically connected to each other and supplied with the same potential, the on-state current of the transistor is increased and the saturation characteristics are improved. A potential for controlling the threshold voltage of the transistor may be supplied to one of the pair of gates. Supplying a constant potential to one of the pair of gates can improve the stability of the electrical characteristics of the transistor. For example, one gate of the transistor may be electrically connected to a wiring to which a constant potential is supplied, or to its own source or drain.

[0538] 25C is an example of a pixel 150 in which the transistors M1 and M3 each have a pair of gates. The pair of gates of the transistors M1 and M3 are electrically connected. With this configuration, the period for writing data to the pixel 150 can be shortened.

[0539] 25D is an example in which a transistor having a pair of gates is used for the transistor M2 in addition to the transistors M1 and M3. The pair of gates of the transistor M2 are electrically connected. By using such a transistor for the transistor M2, the saturation characteristics are improved, which makes it easier to control the emission luminance of the light-emitting device EL and improves the display quality.

[0540] [Example of Transistor Structure] Hereinafter, an example of a cross-sectional structure of a transistor that can be applied to the display device will be described.

[0541] Configuration Example 1 FIG. 26A is a cross-sectional view including a transistor 410. FIG.

[0542] The transistor 410 is provided on a substrate 401 and has a semiconductor layer made of polycrystalline silicon. For example, the transistor 410 corresponds to the transistor M2 of the pixel 150. That is, Fig. 26A illustrates an example in which one of the source and the drain of the transistor 410 is electrically connected to the lower electrode 111 of the light-emitting device.

[0543] The transistor 410 includes a semiconductor layer 411, an insulating layer 412, a conductive layer 413, and the like. The semiconductor layer 411 includes a channel formation region 411i and a low-resistance region 411n. The semiconductor layer 411 includes silicon. The semiconductor layer 411 preferably includes polycrystalline silicon. A part of the insulating layer 412 functions as a gate insulating layer. A part of the conductive layer 413 functions as a gate electrode.

[0544] Note that the semiconductor layer 411 can also include a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor characteristics. In this case, the transistor 410 can be called an OS transistor.

[0545] The low-resistance region 411n is a region containing an impurity element. For example, when the transistor 410 is an n-channel transistor, phosphorus, arsenic, or the like may be added to the low-resistance region 411n. On the other hand, when the transistor 410 is a p-channel transistor, boron, aluminum, or the like may be added to the low-resistance region 411n. Furthermore, in order to control the threshold voltage of the transistor 410, the above-mentioned impurities may be added to the channel formation region 411i.

[0546] An insulating layer 421 is provided over a substrate 401. A semiconductor layer 411 is provided over the insulating layer 421. An insulating layer 412 is provided to cover the semiconductor layer 411 and the insulating layer 421. A conductive layer 413 is provided over the insulating layer 412 so as to overlap with the semiconductor layer 411.

[0547] An insulating layer 422 is provided to cover the conductive layer 413 and the insulating layer 412. A conductive layer 414a and a conductive layer 414b are provided over the insulating layer 422. The conductive layer 414a and the conductive layer 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 422 and the insulating layer 412. A part of the conductive layer 414a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 414b functions as the other of the source electrode and the drain electrode. An insulating layer 104 is provided to cover the conductive layer 414a, the conductive layer 414b, and the insulating layer 422.

[0548] A lower electrode 111 functioning as a pixel electrode is provided over the insulating layer 104. The lower electrode 111 is provided over the insulating layer 104 and is electrically connected to the conductive layer 414b in an opening provided in the insulating layer 104. Although not shown here, an EL layer and a common electrode can be stacked over the lower electrode 111.

[0549] 26B shows a transistor 410a having a pair of gate electrodes, which is different from the transistor 410a shown in FIG. 26A mainly in that a conductive layer 415 and an insulating layer 416 are included.

[0550] The conductive layer 415 is provided over the insulating layer 421. An insulating layer 416 is provided to cover the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided so that at least a channel formation region 411i overlaps with the conductive layer 415 with the insulating layer 416 interposed therebetween.

[0551] 26B , part of the conductive layer 413 functions as a first gate electrode, part of the conductive layer 415 functions as a second gate electrode, part of the insulating layer 412 functions as a first gate insulating layer, and part of the insulating layer 416 functions as a second gate insulating layer.

[0552] Here, when the first gate electrode and the second gate electrode are electrically connected, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layers 412 and 416 in a region not shown. When the second gate electrode and the source or drain are electrically connected, the conductive layer 414a or the conductive layer 414b may be electrically connected to the conductive layer 415 through openings provided in the insulating layers 422, 412, and 416 in a region not shown.

[0553] 26A or 26B can be used as an example of the transistors constituting the pixel 150. In this case, the transistor 410a may be used as all the transistors constituting the pixel 150, the transistor 410 may be used as all the transistors constituting the pixel 150, or the transistor 410 may be used as all the transistors constituting the pixel 150, or the transistor 410a and the transistor 410 may be used in combination.

[0554] [Structure Example 3] Hereinafter, a structure example including both a transistor in which silicon is used for a semiconductor layer and a transistor in which a metal oxide is used for a semiconductor layer will be described.

[0555] FIG. 26C shows a cross-sectional view including transistor 410a and transistor 450.

[0556] The transistor 410a can be configured as in the above-described Structure Example 1. Note that although the example using the transistor 410a is shown here, a structure including the transistor 410 and the transistor 450 may be used, or a structure including all of the transistor 410, the transistor 410a, and the transistor 450 may be used.

[0557] The transistor 450 is a transistor in which a metal oxide is used for a semiconductor layer. The configuration shown in Fig. 26C is an example in which the transistor 450 corresponds to the transistor M1 of the pixel 150 and the transistor 410a corresponds to the transistor M2. That is, Fig. 26C is an example in which one of the source and the drain of the transistor 410a is electrically connected to the lower electrode 111.

[0558] FIG. 26C shows an example in which the transistor 450 has a pair of gates.

[0559] The transistor 450 includes a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, and the like. Part of the conductive layer 453 functions as a first gate of the transistor 450, and part of the conductive layer 455 functions as a second gate of the transistor 450. In this case, part of the insulating layer 452 functions as a first gate insulating layer of the transistor 450, and part of the insulating layer 422 functions as a second gate insulating layer of the transistor 450.

[0560] The conductive layer 455 is provided over the insulating layer 412. The insulating layer 422 is provided to cover the conductive layer 455. The semiconductor layer 451 is provided over the insulating layer 422. The insulating layer 452 is provided to cover the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided over the insulating layer 452 and has a region overlapping with the semiconductor layer 451 and the conductive layer 455.

[0561] An insulating layer 426 is provided to cover the insulating layer 452 and the conductive layer 453. A conductive layer 454a and a conductive layer 454b are provided over the insulating layer 426. The conductive layer 454a and the conductive layer 454b are electrically connected to the semiconductor layer 451 through openings provided in the insulating layer 426 and the insulating layer 452. A part of the conductive layer 454a functions as one of the source electrode and the drain electrode, and a part of the conductive layer 454b functions as the other of the source electrode and the drain electrode. An insulating layer 104 is provided to cover the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0562] Here, the conductive layers 414a and 414b electrically connected to the transistor 410a are preferably formed by processing the same conductive film as the conductive layers 454a and 454b. Figure 26C shows a configuration in which the conductive layers 414a, 414b, 454a, and 454b are formed on the same surface (i.e., in contact with the top surface of the insulating layer 426) and contain the same metal element. In this case, the conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, the insulating layer 452, the insulating layer 422, and the insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0563] The conductive layer 413 functioning as the first gate electrode of the transistor 410a and the conductive layer 455 functioning as the second gate electrode of the transistor 450 are preferably formed by processing the same conductive film. In Figure 26C, the conductive layer 413 and the conductive layer 455 are formed on the same surface (i.e., in contact with the top surface of the insulating layer 412) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0564] In FIG. 26C , the insulating layer 452 functioning as the first gate insulating layer of the transistor 450 covers the end portion of the semiconductor layer 451; however, as in the transistor 450a shown in FIG. 26D , the insulating layer 452 may be processed so that the top surface shape thereof matches or substantially matches the top surface shape of the conductive layer 453.

[0565] In this specification, the phrase "top surface shapes generally match" refers to the overlap of at least a portion of the contours between stacked layers. For example, this includes cases where the upper and lower layers are processed using the same mask pattern, or where a portion of the mask pattern is the same. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes generally match" also applies.

[0566] Although the example in which the transistor 410a corresponds to the transistor M2 and is electrically connected to the pixel electrode has been described, this is not limiting. For example, the transistor 450 or the transistor 450a may correspond to the transistor M2. In this case, the transistor 410a corresponds to the transistor M1, the transistor M3, or another transistor.

[0567] By having the pixel circuit and the light-emitting device structure of the above embodiment, the display device can have one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. The leakage current that can flow through the transistors of the pixel circuit is extremely low, and the lateral leakage current between the light-emitting devices of the above embodiment is extremely low, which is preferable because the display device minimizes light leakage and the like that can occur when displaying black.

[0568] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0569] Embodiment 5 In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0570] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition to these, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0571] The metal oxide can be formed by a sputtering method, a CVD method such as an MOCVD method, an ALD method, or the like.

[0572] <Classification of Crystal Structure> Examples of the crystal structure of an oxide semiconductor include amorphous (including completely amorphous), c-axis-aligned crystalline line (CAAC), nanocrystalline line (nc), cloud-aligned composite (CAC), single crystal, and polycrystalline.

[0573] The crystalline structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using an XRD spectrum obtained by a GIXD (Grazing-Incident XRD) measurement. The GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0574] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetrical. On the other hand, in the case of an IGZO film having a crystalline structure, the shape of the peak in the XRD spectrum is asymmetrical. The asymmetrical shape of the peak in the XRD spectrum clearly indicates the presence of crystals in the film or substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetrical, it cannot be said that the film or substrate is in an amorphous state.

[0575] In addition, the crystalline structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a nanobeam electron diffraction pattern) observed by nanobeam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, and it can be confirmed that the quartz glass is in an amorphous state. In addition, a spot-like pattern is observed in the diffraction pattern of an IGZO film formed at room temperature, rather than a halo. For this reason, it is estimated that the IGZO film formed at room temperature is neither in a crystalline state nor in an amorphous state, but in an intermediate state, and it cannot be concluded that it is in an amorphous state.

[0576] <<Structure of Oxide Semiconductor>> Note that oxide semiconductors may be classified differently from the above when focusing on their structures. For example, oxide semiconductors are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous-like oxide semiconductors (a-like OSs), amorphous oxide semiconductors, and the like.

[0577] Here, the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described in detail.

[0578] [CAAC-OS] A CAAC-OS is an oxide semiconductor having multiple crystalline regions, each with its c-axis aligned in a specific direction. The specific direction refers to the thickness direction of the CAAC-OS film, the normal direction to the surface where the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region having periodic atomic arrangement. If the atomic arrangement is considered as a lattice arrangement, a crystalline region is also a region with a uniform lattice arrangement. Furthermore, a CAAC-OS has a region where multiple crystalline regions are connected in the a-b plane direction, and the region may have distortion. Note that distortion refers to a portion where the lattice arrangement changes between a region with a uniform lattice arrangement and a region with another uniform lattice arrangement in a region where multiple crystalline regions are connected. In other words, a CAAC-OS is an oxide semiconductor whose c-axes are aligned and whose orientation is not clearly aligned in the a-b plane direction.

[0579] Each of the multiple crystalline regions is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of one minute crystal, the maximum diameter of the crystalline region is less than 10 nm. When a crystalline region is composed of multiple minute crystals, the size of the crystalline region may be several tens of nanometers.

[0580] In an In-M-Zn oxide (wherein the element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, and the like), the CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as an In layer) and a layer containing the element M, zinc (Zn), and oxygen (hereinafter referred to as an (M, Zn) layer) are stacked. Note that indium and the element M are mutually substituted. Therefore, the (M, Zn) layer may contain indium. The In layer may contain the element M. The In layer may contain Zn. The layered structure is observed as a lattice image in a high-resolution transmission electron microscope (TEM) image, for example.

[0581] When a CAAC-OS film is subjected to structural analysis using an XRD apparatus, for example, a peak indicating c-axis orientation is detected at or near 2θ = 31° in out-of-plane XRD measurement using θ / 2θ scanning. Note that the position of the peak indicating c-axis orientation (the value of 2θ) may vary depending on the type, composition, and the like of the metal elements constituting the CAAC-OS.

[0582] For example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film, and the spots are observed at positions that are point-symmetric with respect to a spot of an incident electron beam that has passed through the sample (also referred to as a direct spot).

[0583] When a crystalline region is observed from the specific direction, the lattice arrangement in the crystalline region is basically a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be a non-regular hexagon. The distortion may have a pentagonal, heptagonal, or other lattice arrangement. In the CAAC-OS, no clear grain boundary can be identified even near the distortion. This indicates that the distortion in the lattice arrangement suppresses the formation of grain boundaries. This is thought to be because the CAAC-OS can tolerate distortion due to the lack of close-packed arrangement of oxygen atoms in the a-b plane and the change in interatomic bond distance caused by metal atom substitution.

[0584] Note that a crystal structure in which clear grain boundaries are observed is called polycrystalline. The grain boundaries act as recombination centers, and are likely to trap carriers, resulting in a decrease in the on-state current of a transistor and a decrease in field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides having a crystal structure suitable for a semiconductor layer of a transistor. Note that a structure containing Zn is preferable for forming a CAAC-OS. For example, In—Zn oxide and In—Ga—Zn oxide are suitable because they can suppress the generation of grain boundaries more effectively than In oxide.

[0585] CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to a decrease in electron mobility due to crystal grain boundaries. Furthermore, since the crystallinity of an oxide semiconductor can be reduced by the inclusion of impurities, the formation of defects, or the like, the CAAC-OS can also be said to be an oxide semiconductor with few impurities and defects (oxygen vacancies, etc.). Therefore, an oxide semiconductor having CAAC-OS has stable physical properties. Therefore, an oxide semiconductor having CAAC-OS is heat-resistant and highly reliable. Furthermore, the CAAC-OS is stable even against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, using a CAAC-OS for an OS transistor can increase the flexibility of the manufacturing process.

[0586] [nc-OS] The nc-OS has periodic atomic arrangement in a microscopic region (e.g., a region of 1 nm to 10 nm, particularly a region of 1 nm to 3 nm). In other words, the nc-OS has microcrystals. Note that the size of the microcrystals is, for example, 1 nm to 10 nm, particularly 1 nm to 3 nm, and therefore the microcrystals are also called nanocrystals. Furthermore, the nc-OS does not exhibit regularity in the crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, the nc-OS may be indistinguishable from an a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis of an nc-OS film is performed using an XRD apparatus, no peak indicating crystallinity is detected in out-of-plane XRD measurement using θ / 2θ scanning. When an nc-OS film is subjected to electron diffraction (also referred to as selected-area electron diffraction) using an electron beam with a probe diameter larger than that of a nanocrystal (e.g., 50 nm or more), a diffraction pattern resembling a halo pattern is observed. On the other hand, when an nc-OS film is subjected to electron diffraction (also referred to as nanobeam electron diffraction) using an electron beam with a probe diameter close to or smaller than that of a nanocrystal (e.g., 1 nm to 30 nm), an electron diffraction pattern in which multiple spots are observed within a ring-shaped region centered on a direct spot may be obtained.

[0587] [a-Like OS] The a-like OS is an oxide semiconductor having a structure between the nc-OS and an amorphous oxide semiconductor. The a-like OS has pores or low-density regions. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS. Furthermore, the a-like OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0588] <<Structure of Oxide Semiconductor>> Next, the above-described CAC-OS will be described in detail. Note that the CAC-OS relates to a material structure.

[0589] [CAC-OS] CAC-OS is, for example, a material in which elements constituting a metal oxide are unevenly distributed in a size of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof. Note that hereinafter, a state in which one or more metal elements are unevenly distributed in a metal oxide and regions containing the metal elements are mixed in a size of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or in the vicinity thereof, is also referred to as a mosaic or patch state.

[0590] Furthermore, the CAC-OS has a mosaic structure in which a material is separated into a first region and a second region, and the first region is distributed throughout the film (hereinafter also referred to as a cloud structure). That is, the CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0591] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in the In—Ga—Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in the In—Ga—Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0592] Specifically, the first region is a region whose main component is indium oxide, indium zinc oxide, or the like. The second region is a region whose main component is gallium oxide, gallium zinc oxide, or the like. In other words, the first region can be rephrased as a region whose main component is In. The second region can be rephrased as a region whose main component is Ga.

[0593] It should be noted that there are cases where a clear boundary between the first region and the second region cannot be observed.

[0594] Furthermore, CAC-OS in In—Ga—Zn oxide refers to a structure in which a mosaic of regions containing Ga as the main component and regions containing In as the main component are randomly arranged in a material composition containing In, Ga, Zn, and O. Therefore, it is presumed that CAC-OS has a structure in which metal elements are distributed nonuniformly.

[0595] The CAC-OS can be formed by sputtering without heating the substrate. When the CAC-OS is formed by sputtering, one or more of an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. The lower the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition, the more preferable it is. For example, the flow rate of oxygen gas relative to the total flow rate of deposition gas during deposition is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0596] Furthermore, for example, in the case of CAC-OS in an In—Ga—Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) can confirm that the CAC-OS has a structure in which a region containing In as a main component (first region) and a region containing Ga as a main component (second region) are unevenly distributed and mixed.

[0597] Here, the first region has higher conductivity than the second region. That is, the flow of carriers through the first region causes the metal oxide to exhibit conductivity. Therefore, the first region is distributed in a cloud-like manner in the metal oxide, thereby achieving a high field-effect mobility (μ).

[0598] On the other hand, the second region has higher insulating properties than the first region. That is, the second region is distributed in the metal oxide, thereby suppressing leakage current.

[0599] Therefore, when a CAC-OS is used in a transistor, the conductivity due to the first region and the insulating property due to the second region act complementarily, thereby providing the CAC-OS with a switching function (a function of turning on / off). In other words, a CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and the entire material functions as a semiconductor. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using a CAC-OS in a transistor, a high on-current (I ｏｎ), high field-effect mobility (μ), and good switching behavior can be achieved.

[0600] Furthermore, a transistor using the CAC-OS has high reliability, and therefore, the CAC-OS is ideal for various semiconductor devices such as display devices.

[0601] Oxide semiconductors have a variety of structures, each of which has different characteristics. The oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, a CAC-OS, an nc-OS, and a CAAC-OS.

[0602] <Transistor Having Oxide Semiconductor> Next, a case where the oxide semiconductor is used for a transistor will be described.

[0603] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility and high reliability can be realized.

[0604] For the transistor, an oxide semiconductor having a low carrier concentration is preferably used. For example, the carrier concentration of the oxide semiconductor is 1×10 １７ cm −３ Below 1 × 10, preferably １５ cm −３ More preferably, 1×10 １３ cm −３ Less than 1×10, more preferably 1×10 １１ cm −３ More preferably, 1×10 １０ cm −３ is less than 1×10 −９ cm −３ The above is the case. Note that in order to reduce the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced to reduce the density of defect states. In this specification and the like, a semiconductor having a low impurity concentration and a low density of defect states is referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor. Note that an oxide semiconductor having a low carrier concentration may also be referred to as a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.

[0605] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states, and therefore the density of trap states may also be low.

[0606] Furthermore, charges trapped in the trap states of an oxide semiconductor take a long time to disappear and may behave like fixed charges. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high density of trap states may have unstable electrical characteristics.

[0607] Therefore, in order to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0608] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0609] When an oxide semiconductor contains silicon or carbon, which is one of Group 14 elements, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are calculated to be 2×10 １８ atoms / cm ３ Below 2 × 10, preferably １７ atoms / cm ３ The following applies.

[0610] Furthermore, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels are formed and carriers are generated in some cases. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal is likely to be normally on. For this reason, when the concentration of the alkali metal or the alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 １８ atoms / cm ３ Below 2 × 10, preferably １６atoms / cm ３ Do the following:

[0611] Furthermore, when nitrogen is contained in an oxide semiconductor, electrons serving as carriers are generated, the carrier concentration increases, and the semiconductor is likely to become n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor is likely to be normally on. Alternatively, when nitrogen is contained in an oxide semiconductor, trap states may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to 5×10 １９ atoms / cm ３ Less than 5×10 １８ atoms / cm ３ Less than 1×10, more preferably 1×10 １８ atoms / cm ３ or less, more preferably 5 × 10 １７ atoms / cm ３ Do the following:

[0612] Furthermore, hydrogen contained in an oxide semiconductor may react with oxygen bonded to a metal atom to form water, which may form an oxygen vacancy. Hydrogen entering the oxygen vacancy may generate electrons as carriers. Furthermore, some of the hydrogen may bond with oxygen bonded to a metal atom to generate electrons as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen is likely to be normally on. Therefore, it is preferable to reduce the amount of hydrogen in the oxide semiconductor as much as possible. Specifically, the hydrogen concentration in an oxide semiconductor measured by SIMS is 1×10 ２０ atoms / cm ３ less than 1×10 １９ atoms / cm ３ less than 5×10 １８ atoms / cm ３ less than 1×10 １８ atoms / cm ３ Make it less than.

[0613] When an oxide semiconductor with sufficiently reduced impurities is used for a channel formation region of a transistor, stable electrical characteristics can be obtained.

[0614] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0615] Embodiment 6 In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS.

[0616] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0617] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0618] In particular, the display device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and mixed reality (MR) devices.

[0619] The display device of one embodiment of the present invention preferably has an extremely high resolution, such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the display device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a display device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth in electronic devices for personal use, such as portable or home use. Furthermore, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0620] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0621] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, and a function to read out programs or data recorded on a recording medium.

[0622] 27A shows an example of a television set. In a television set 7100, a pixel portion 7000 is incorporated in a housing 7101. Here, the housing 7101 is supported by a stand 7103.

[0623] The pixel portion 103 of one embodiment of the present invention can be applied to the pixel portion 7000 .

[0624] 27A can be operated using an operation switch provided on the housing 7101 and a separate remote control 7111. Alternatively, a touch sensor may be provided in the pixel portion 7000, and the television set 7100 may be operated by touching the pixel portion 7000 with a finger or the like. The remote control 7111 may have a display portion that displays information output from the remote control 7111. Channels and volume can be controlled by operation keys or a touch panel provided on the remote control 7111, and an image displayed on the pixel portion 7000 can be controlled.

[0625] The television device 7100 is configured to include a receiver, a modem, and the like. Ordinary television broadcasts can be received using the receiver. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from a sender to a receiver) or two-way (between a sender and a receiver, or between receivers, etc.) information communication.

[0626] 27B shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. The pixel portion 7000 is incorporated in the housing 7211.

[0627] The pixel portion 103 of one embodiment of the present invention can be applied to the pixel portion 7000 .

[0628] 27C and 27D show an example of digital signage.

[0629] 27C includes a housing 7301, a pixel portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0630] 27D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a pixel portion 7000 provided along the curved surface of the pillar 7401.

[0631] 27C and 27D, the pixel portion 103 of one embodiment of the present invention can be applied to the pixel portion 7000.

[0632] The larger the pixel section 7000, the more information can be provided at one time. Also, the larger the pixel section 7000, the more easily it is noticed by people, which can increase the advertising effect, for example.

[0633] Applying a touch panel to the pixel portion 7000 is preferable because it not only displays an image or a video on the pixel portion 7000 but also allows a user to intuitively operate it. Furthermore, when used for providing information such as route information or traffic information, the intuitive operation can improve usability.

[0634] 27C and 27D , the digital signage 7300 or the digital signage 7400 is preferably capable of wirelessly linking with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user. For example, advertising information displayed in the pixel portion 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. By operating the information terminal 7311 or the information terminal 7411, the display of the pixel portion 7000 can be switched.

[0635] Furthermore, the digital signage 7300 or the digital signage 7400 can be made to run a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller), thereby allowing an unspecified number of users to simultaneously participate in and enjoy the game.

[0636] 28A, 28B, 29A, and 29B, examples of wearable devices that can be worn on the head will be described. These wearable devices have one or both of a function to display AR content and a function to display VR content. Note that these wearable devices may also have a function to display SR (Substitutional Reality) or MR content in addition to AR and VR. By having an electronic device have the function to display AR, VR, SR, MR, or other content, it is possible to enhance the user's sense of immersion.

[0637] The electronic device 700A shown in FIG. 28A and the electronic device 700B shown in FIG. 28B each have a pair of pixel units 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0638] The pixel portion 103 of one embodiment of the present invention can be applied to the pixel portion 751 .

[0639] The electronic device 700A and the electronic device 700B can each project an image displayed in the pixel unit 751 onto a display region 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display region superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0640] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in the display area 756.

[0641] The communication unit has a wireless communication device, and can supply a video signal, etc. Instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential are supplied may be provided.

[0642] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0643] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module can detect a tap operation, a slide operation, or the like by the user and perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can broaden the range of operations.

[0644] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, and an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0645] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving device (also called a light receiving element). The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0646] The electronic device 800A shown in FIG. 29A and the electronic device 800B shown in FIG. 29B each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0647] The pixel portion 103 of one embodiment of the present invention can be applied to the display portion 820 .

[0648] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0649] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0650] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0651] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, in Fig. 29A and other figures, the mounting unit 823 is shaped like the temples of glasses (also called joints or temples), but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0652] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.

[0653] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0654] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0655] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0656] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, an electronic device 700A shown in FIG. 28A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, an electronic device 800A shown in FIG. 29A has a function of transmitting information to the earphone 750 through the wireless communication function.

[0657] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 28B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0658] Similarly, electronic device 800B shown in Fig. 29B has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. Furthermore, earphone unit 827 and wearing unit 823 may have magnets. This allows earphone unit 827 to be fixed to wearing unit 823 by magnetic force, which is preferable as it makes storage easier.

[0659] The electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have one or both of an audio input terminal and an audio input mechanism. For example, a sound collection device such as a microphone can be used as the audio input mechanism. By having the audio input mechanism, the electronic device may be endowed with the functionality of a so-called headset.

[0660] As described above, as electronic devices according to one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0661] Furthermore, the electronic device of one embodiment of the present invention can transmit information to the earphone by wire or wirelessly.

[0662] The electronic device 6500 shown in FIG. 30A is a portable information terminal that can be used as a smartphone.

[0663] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0664] The pixel portion 103 of one embodiment of the present invention can be applied to the display portion 6502 .

[0665] FIG. 30B is a cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0666] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0667] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0668] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0669] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0670] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0671] AL: wiring, CL: wiring, DP: display module, DPa: display module, DPb: display module, DPc: display module, DPd: display module, GL: wiring, M11: transistor, M12: transistor, M13: transistor, M14: transistor, PD: light receiving device, RES: wiring, RL: wiring, SE: wiring, SL: wiring, SLB: wiring, SLG: wiring, SLR: wiring, TX: wiring, 10: display device, 11a: light emitting device, 11B: light emitting device, 11b: light emitting device, 11c: light emitting device, 11G: light emitting device, 11 R: light-emitting device, 11S: light-receiving device, 11W: light-emitting device, 11: light-emitting device, 12: drive circuit section, 13: drive circuit section, 72b: region, 72c: region, 72d: region, 72: region, 73: region, 74a: FPC, 74: FPC, 79: display region, 100: display device, 101: substrate, 103a: pixel section, 103b: pixel section, 103c: pixel section, 103d: pixel section, 103: pixel section, 104: insulating layer, 110B: sub-pixel, 110G: sub-pixel, 110R: sub-pixel, 110S: light-receiving section, 110: sub-pixel, 111B: lower electrode, 111C: connection electrode, 1 11G: lower electrode, 111R: lower electrode, 111S: lower electrode, 111: lower electrode, 112B: organic compound layer, 112f: organic compound film, 112fB: organic compound film, 112fG: organic compound film, 112fR: organic compound film, 112G: organic compound layer, 112R: organic compound layer, 112S: active layer, 112W: organic compound layer, 112: organic compound layer, 113: common electrode, 114: common layer, 118a: slit, 118b: slit, 119: slit, 123: resist mask, 124a: pair, 124b: pair, 125f: insulating film, 125: insulating layer, 126: insulating layer, 128: insulating layer, 135: mask, 140: connecting portion, 143R: resist mask, 143: resist mask, 144B: mask film, 144G: mask film, 144R: mask film, 144: mask film, 145B: mask layer, 145G: mask layer, 145R: mask layer, 145: mask layer, 146B: mask film, 146G: mask film, 146R: mask film, 146: mask film, 147B: mask layer, 147G: mask layer, 147R: mask layer, 147: mask layer, 150a: pixel, 150b: pixel, 150: pixel, 151a: first auxiliary wiring,151b: second auxiliary wiring, 151f: auxiliary wiring layer, 151: auxiliary wiring, 152: light-shielding layer, 155f: semiconductor film, 161: conductive layer, 162: conductive layer, 163: resin layer, 170: substrate, 171: adhesive layer, 172: resist mask, 173B: colored layer, 173G: colored layer, 173R: colored layer, 173: colored layer, 174: mask film, 175: mask layer, 176: mask film, 177: mask layer, 280: display module, 282: circuit section, 283a: pixel circuit, 283: pixel circuit section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate , 401: substrate, 410a: transistor, 410: transistor, 411i: channel formation region, 411n: low resistance region, 411: semiconductor layer, 412: insulating layer, 413: conductive layer, 414a: conductive layer, 414b: conductive layer, 415: conductive layer, 416: insulating layer, 421: insulating layer, 422: insulating layer, 426: insulating layer, 450a: transistor, 450: transistor, 451: semiconductor layer, 452: insulating layer, 453: conductive layer, 454a: conductive layer, 454b: conductive layer, 455: conductive layer, 700A: electronic device, 700B: electronic device, 721: housing, 723: mounting portion, 72 7: earphone unit, 750: earphone, 751: pixel unit, 753: optical member, 756: display area, 757: frame, 758: nose pad, 800A: electronic device, 800B: electronic device, 820: display unit, 821: housing, 822: communication unit, 823: wearing unit, 824: control unit, 825: imaging unit, 827: earphone unit, 832: lens, 6500: electronic device, 6501: housing, 6502: display unit, 6503: power button, 6504: button, 6505: speaker, 6506: microphone, 6507: camera, 6508: light source, 6510: protective member, 6511: display panel panel, 6512: optical member, 6513: touch sensor panel, 6515: FPC, 6516: IC, 6517: printed circuit board, 6518: battery, 7000: pixel unit, 7100: television device, 7101: housing, 7103: stand, 7111: remote control device, 7200: notebook personal computer, 7211: housing, 7212: keyboard, 7213: pointing device, 7214: external connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal device, 7400: digital signage,7401: Pillar, 7411: Information terminal,

Claims

1. a first light-emitting device including a first lower electrode having an end portion with a first tapered shape and a first organic compound layer having a shape that conforms to the first tapered shape; a second light-emitting device including a second lower electrode having an end portion with a second tapered shape and a second organic compound layer having a shape that conforms to the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer located between the first light emitting device and the second light emitting device; an auxiliary wiring electrically connected to the common electrode, the auxiliary wiring is located on the common electrode and has a region overlapping with the insulating layer; the first organic compound layer includes a first light-emitting organic compound; the second organic compound layer has a second light-emitting organic compound different from the first light-emitting organic compound; Display device.

2. a light receiving device; a first light-emitting device including a first lower electrode having an end portion with a first tapered shape and a first organic compound layer having a shape that conforms to the first tapered shape; a second light-emitting device including a second lower electrode having an end portion with a second tapered shape and a second organic compound layer having a shape that conforms to the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer located between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; an auxiliary wiring electrically connected to the common electrode, the auxiliary wiring is located on the common electrode and has a region overlapping with the insulating layer; the first organic compound layer includes a first light-emitting organic compound; the second organic compound layer has a second light-emitting organic compound different from the first light-emitting organic compound; Display device.

3. a light receiving device; a first light-emitting device including a first lower electrode having an end portion with a first tapered shape and a first organic compound layer having a shape that conforms to the first tapered shape; a second light-emitting device including a second lower electrode having an end portion with a second tapered shape and a second organic compound layer having a shape that conforms to the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer located between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; an auxiliary wiring electrically connected to the common electrode, the auxiliary wiring is located on the common electrode and has a region provided so as to surround the light-receiving device; the first organic compound layer includes a first light-emitting organic compound; the second organic compound layer has a second light-emitting organic compound different from the first light-emitting organic compound; Display device.

4. a light receiving device; a first light-emitting device including a first lower electrode having an end portion with a first tapered shape and a first organic compound layer having a shape that conforms to the first tapered shape; a second light-emitting device including a second lower electrode having an end portion with a second tapered shape and a second organic compound layer having a shape that conforms to the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer located between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; an auxiliary wiring electrically connected to the common electrode, the auxiliary wiring is located on the common electrode and has a region provided between the first light-emitting device and the light-receiving device; the first organic compound layer includes a first light-emitting organic compound; the second organic compound layer has a second light-emitting organic compound different from the first light-emitting organic compound; Display device.

5. In any one of claims 1 to 4, the insulating layer is provided so as to fill the gap between the first organic compound layer and the second organic compound layer, and has a shape in which the center portion is raised higher than the ends; Display device.

6. In any one of claims 1 to 4, the insulating layer is provided so as to fill a gap between the first organic compound layer and the second organic compound layer, and has a flat upper shape; Display device.