Method for manufacturing semiconductor device and multilayer body for provisional fixation

Abstract

The present invention discloses a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises: a step for preparing a multilayer body for provisional fixation, the multilayer body sequentially having a support member, a light absorption layer, and a provisional fixation material layer that contains a cured product of a thermosetting resin component, in this order from the support member; a step for provisionally fixing a semiconductor member to the support member with the light absorption layer and the provisional fixation material layer being interposed therebetween; a step for processing the semiconductor member, which is provisionally fixed to the support member; and a step for separating the semiconductor member from the support member by irradiating the light absorption layer of the multilayer body for provisional fixation with light from the support member side. With respect to a surface of the provisional fixation material layer on which the semiconductor member is to be disposed, if a nanoindentation method employing a Berkovich indenter is used to increase a load for 5 seconds at a load speed of 20 μN / second under the condition of 25°C, hold the load at 100 μN for 2 seconds after the load reaches 100 μN, and then decrease the load for 5 seconds at an unloading speed of 20 μN / second to 0 mN, the indentation depth is 600 nm or more.

Description

Semiconductor device manufacturing method and temporary fixing laminate

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a temporary fixing laminate.

[0002] In the manufacture of semiconductor devices, after an integrated circuit is incorporated into a semiconductor substrate such as a semiconductor wafer or semiconductor chip, the semiconductor member having the semiconductor substrate may be processed. The semiconductor member is subjected to processing such as grinding the back surface and dicing to separate the semiconductor member. The semiconductor member is usually processed while temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Documents 1 and 2 disclose methods for separating the semiconductor member from the support member by irradiating a temporary fixing material layer with light (laser light).

[0003] JP 2016-138182 A JP 2013-033814 A

[0004] The main object of the present disclosure is to provide a method for manufacturing a semiconductor device that includes a step of processing a semiconductor member temporarily fixed to a support member, and that is capable of sufficiently fixing the semiconductor member and the support member.

[0005] The present disclosure provides a method for manufacturing a semiconductor device according to [1] to [5] and a temporary fixing laminate according to [6] to

[10] . [1] A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate having, in this order from the support member, a support member, a light absorbing layer, and a temporary fixing material layer containing a cured product of a thermosetting resin component; temporarily fixing a semiconductor member to the support member via the light absorbing layer and the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member, wherein a nanoindentation method using a Berkovich indenter is performed on the surface of the temporary fixing material layer on which the semiconductor member is located, at 25°C, increasing a load at a loading rate of 20 μN / sec for 5 seconds, and after the load reaches 100 μN, maintaining the load at 100 μN for 2 seconds, and then decreasing the load at an unloading rate of 20 μN / sec for 5 seconds until the load is unloaded to 0 mN, and the indentation depth is 600 nm or more. [2] The manufacturing method of a semiconductor device according to [1], wherein the surface roughness of the surface of the temporary fixing material layer on which the semiconductor member is placed is 50 nm or less. [3] The surface tackiness at 30°C of the surface of the temporary fixing material layer on which the semiconductor member is placed is 9.8 × 10 －３[4] The method for manufacturing a semiconductor device according to any one of [1] to [3], wherein the thermosetting resin component contains a thermoplastic resin and a thermosetting resin, and the thermoplastic resin contains a hydrocarbon resin. [5] The method for manufacturing a semiconductor device according to [4], wherein the hydrocarbon resin contains a hydrocarbon resin having a monomer unit derived from styrene. [6] A temporary fixing laminate used for temporarily fixing a semiconductor member and a support member, comprising, in this order from the support member, a support member, a light absorbing layer, and a temporary fixing material layer containing a cured product of a thermosetting resin component, wherein the surface of the temporary fixing material layer on which the semiconductor member is to be placed is measured by a nanoindentation method using a Berkovich indenter at 25°C, increasing the load at a loading rate of 20 μN / sec for 5 seconds, and after the load reaches 100 μN, maintaining the load at 100 μN for 2 seconds, and then reducing the load at an unloading rate of 20 μN / sec for 5 seconds until the load reaches 0 mN, and the indentation depth is 600 nm or more. [7] The temporary fixing laminate according to [6], wherein the surface roughness of the surface of the temporary fixing material layer on which the semiconductor member is to be placed is 50 nm or less. [8] The surface tackiness at 30°C of the surface of the temporary fixing material layer on which the semiconductor member is to be placed is 9.8 × 10 －３ The temporary fixing laminate according to [6] or [7], wherein the thermosetting resin component contains a thermoplastic resin and a thermosetting resin, and the thermoplastic resin contains a hydrocarbon resin.

[10] The temporary fixing laminate according to [9], wherein the hydrocarbon resin contains a hydrocarbon resin having a monomer unit derived from styrene.

[0006] According to the present disclosure, a method for manufacturing a semiconductor device, which includes a step of processing a semiconductor member temporarily fixed to a support member, is provided, which is capable of sufficiently fixing the semiconductor member and the support member. Furthermore, some embodiments of the method for manufacturing a semiconductor device tend to be able to sufficiently reduce peeling residue after separating the semiconductor member from the support member. Furthermore, according to the present disclosure, a temporary fixing laminate for use in such a method for manufacturing a semiconductor device is provided.

[0007] Fig. 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. Figs. 2(a) and 2(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a temporary fixing laminate. Figs. 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figs. 4(a), 4(b), and 4(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Figs. 5(a) and 5(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including steps, etc.) are not essential unless specifically stated. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

[0009] The same applies to the numerical values ​​and ranges in the present disclosure, and do not limit the present disclosure. In this specification, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this specification, the upper or lower limit value of that numerical range may be replaced with the value shown in the Examples (Production Examples).

[0010] In this specification, the term "layer" includes not only a structure with a shape formed over the entire surface when observed in a plan view, but also a structure with a shape formed on a portion of the surface. Furthermore, in this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.

[0011] In this specification, (meth)acrylate means acrylate or its corresponding methacrylate, and the same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0012] In this specification, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more within the range that meets the conditions. When multiple substances corresponding to each component are present, the content of each component means the total amount of the multiple substances unless otherwise specified.

[0013] [Temporary Fixing Laminate and Manufacturing Method Thereof] The temporary fixing laminate of this embodiment is used to temporarily fix a semiconductor member and a support member. Fig. 1 is a schematic cross-sectional view showing one embodiment of the temporary fixing laminate. The temporary fixing laminate 20 shown in Fig. 1 has, in this order from the support member 2, a light absorbing layer 4, and a temporary fixing material layer 6c containing a cured product of a thermosetting resin component. The temporary fixing material layer 6c has a surface S on the side of the temporary fixing material layer 6c on which the semiconductor member is placed (the side opposite to the light absorbing layer 4).

[0014] The support member 2 is a plate-like body that has high transmittance and can withstand the load applied during processing of the semiconductor member. Examples of the support member 2 include an inorganic glass substrate and a transparent resin substrate.

[0015] The thickness of the support member 2 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 2 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 2 is 2.0 mm or less, material costs tend to be reduced.

[0016] The light-absorbing layer 4 is a layer that absorbs light and generates heat. The light-absorbing layer 4 may be, for example, a conductor layer containing a conductor that absorbs light and generates heat. Examples of conductors that constitute the conductor layer include metals, metal oxides, and conductive carbon materials. The metal may be a single metal such as chromium, copper, titanium, silver, platinum, or gold, or may be an alloy such as nickel-chromium, stainless steel, or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. The conductor may be chromium, titanium, or a conductive carbon material. The light-absorbing layer 4 may be, for example, a conductor-containing resin layer that contains a conductor that absorbs light and generates heat and a resin.

[0017] The light absorbing layer 4 may be a metal layer consisting of a single layer or multiple layers, for example, a metal layer consisting of a copper layer and a titanium layer.

[0018] When the light absorbing layer 4 is a single metal layer, the light absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0019] The light-absorbing layer 4 may be composed of two layers, a first layer and a second layer, stacked in this order from the support member 2 side. In this case, for example, if the first layer has high light absorption and the second layer has a high thermal expansion coefficient and a high elastic modulus, good peelability tends to be obtained. From this perspective, the first layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of tantalum (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr), and the second layer of the light-absorbing layer 4 may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

[0020] The thickness of the light absorbing layer 4 may be 1 to 5,000 nm, 100 to 3,000 nm, or 50 to 300 nm, from the viewpoint of easy releasability. When the light absorbing layer 4 is a metal layer consisting of a single layer or multiple layers, the thickness of the light absorbing layer 4 (or metal layer) may be 75 nm or more, 90 nm or more, or 100 nm or more, from the viewpoint of good releasability, and may be 1,000 nm or less, 800 nm or less, 500 nm or less, or 300 nm or less. When the light absorbing layer 4 is a single metal layer, the thickness of the light absorbing layer 4 (or metal layer) may be 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more, and may be 1,000 nm or less, 800 nm or less, or 500 nm or less, from the viewpoint of good releasability. When the light absorbing layer 4 is a conductor-containing resin layer, the thickness of the light absorbing layer 4 may be 1 to 50 μm, or may be 1 μm or more, 5 μm or more, or 10 μm or more, and may be 50 μm or less, 30 μm or less, or 20 μm or less.

[0021] On the surface S of the temporary fixing material layer 6c, a nanoindentation method using a Berkovich indenter was performed at 25°C, increasing the load at a loading rate of 20 μN / s for 5 seconds. After the load reached 100 μN, the load was held at 100 μN for 2 seconds, and then reduced to 0 mN at an unloading rate of 20 μN / s for 5 seconds. The indentation depth was 600 nm or more. If the indentation depth is 600 nm or more, the semiconductor member and the support member can be sufficiently fixed via the light absorbing layer and the temporary fixing material layer, even after the thermosetting resin component has been thermally cured. The indentation depth may be 650 nm or more, 700 nm or more, 750 nm or more, 800 nm or more, 850 nm or more, or 900 nm or more. The indentation depth may be, for example, 2000 nm or less, 1500 nm or less, or 1200 nm or less.

[0022] The indentation depth can be measured in accordance with ISO 14577 using a nanoindenter and a Berkovich indenter by performing an indentation test using a nanoindenter. More specifically, first, a thermosetting resin layer (thermosetting resin film) containing a thermosetting resin component having a thickness of 50 μm is prepared on a support film (the preparation of the thermosetting resin film will be described later). Next, the thermosetting resin layer (thermosetting resin film) is attached to a glass slide using a roll laminator, and the support film is peeled off to obtain a laminate including the glass slide and the thermosetting resin layer provided on the glass slide. At this time, the surface of the thermosetting resin layer in contact with the support film is the surface S of the temporary fixing material layer 6c (the surface on which the semiconductor member is disposed). The laminate may be a temporary fixing laminate described later. Next, the prepared laminate is heated in a dryer at 200 ° C for 1 hour to cure the thermosetting resin component of the thermosetting resin layer, forming a temporary fixing material layer containing the cured thermosetting resin component to obtain a test specimen. The resulting test specimen is then fixed to the stage of a nanoindenter, and a Berkovich indenter is brought into contact with the surface of the temporary fixing material layer of the test specimen. An indentation test is then performed at 25 ° C. under conditions of 20 μN / s, increasing the load for 5 seconds at a loading rate of 20 μN / s. After the load reaches 100 μN, the load is held at 100 μN for 2 seconds, and then reduced to 0 mN at an unloading rate of 20 μN / s for 5 seconds. The depth to which the Berkovich indenter is pressed into the temporary fixing material layer is measured using the nanoindenter. The indentation test is performed at any five points, and the median of the obtained depths is taken as the indentation depth.

[0023] (Indentation test conditions) Indenter: Berkovich indenter Loading speed: 20 μN / sec Loading time: 5 sec (maximum load: 100 μN) Holding time: 2 sec Unloading speed: 20 μN / sec

[0024] The surface roughness (arithmetic mean roughness Ra (JIS B 0601-2001)) of the surface S may be 50 nm or less. When the surface roughness is 50 nm or less, even after the thermosetting resin component is thermally cured, the semiconductor member and the support member tend to be more sufficiently fixed via the light absorbing layer and the temporary fixing material layer. The surface roughness may be 40 nm or less, 30 nm or less, 25 nm or less, 20 nm or less, 15 nm or less, 10 nm or less, 8 nm or less, or 5 nm or less. The surface roughness may be, for example, 0.1 nm or more or 1 nm or more.

[0025] The surface roughness can be determined by preparing a test specimen similar to that used in the indentation test and measuring the surface of the temporary fixing material layer of the test specimen using a stylus-type step surface profiler. The measurement conditions are not particularly limited, but examples thereof include the following conditions:

[0026] (Measurement conditions) Load: 4.9 x 10 －６ N (5mgf) Moving speed: 0.3mm / sec Measurement length: 30mm

[0027] The surface tack strength of surface S at 30°C is 9.8 x 10 －３ N (1.0 gf) or more. The surface tack strength may be 9.8 × 10 －３ When the surface tack strength is 2.0 × 10 N (1.0 gf) or more, the semiconductor member and the support member tend to be more sufficiently fixed via the light absorbing layer and the temporary fixing material layer even after the thermosetting resin component is thermally cured. －２ N (2.0 gf) or more, 2.9 x 10 －２ N (3.0 gf) or more, 3.4 x 10 －２ N (3.5 gf) or more, 3.9 x 10 －２ N (4.0 gf) or more, 4.4 x 10 －２ N (4.5 gf) or more, or 4.9 x 10 －２ The surface tack strength may be, for example, 2.0 × 10 －１ N (20 gf) or less, 1.5 x 10 －１ N (15 gf) or less, or 9.8 x 10 －２ N (10 gf) or less.

[0028] To measure the surface tackiness, a test specimen similar to that used in the indentation test is prepared and left to stand on a stage of a probe tackiness tester at 30° C. for 1 minute. Then, the surface tackiness can be determined using the probe tackiness tester under the following measurement conditions.

[0029] (Measurement conditions) Probe: Made of SUS (stainless steel), diameter 5 mm Push-in / pull-out speed: 600 mm / sec Push-in time: 1 sec

[0030] The temporary fixing material layer 6c contains a cured product of a thermosetting resin component, and the thermosetting resin layer or the thermosetting resin film for forming it also contains a thermosetting resin component. The thermosetting resin component can be arbitrarily selected from those that satisfy predetermined conditions for the indentation depth of the temporary fixing material layer containing the cured product of the thermosetting resin component. The thermosetting resin component tends to easily satisfy predetermined conditions for indentation depth, surface roughness, surface tack, etc., and therefore may contain, for example, a thermoplastic resin and a thermosetting resin. In this case, the thermoplastic resin may contain a hydrocarbon resin. When the thermosetting resin component contains a thermoplastic resin and a thermosetting resin, heat resistance tends to be more improved than when a thermoplastic resin is used alone, and peeling residue tends to be more sufficiently reduced than when a thermosetting resin is used alone.

[0031] The thermoplastic resin is a resin that has thermoplastic properties, or at least has thermoplastic properties in an uncured state and forms a crosslinked structure after heating. Examples of the thermoplastic resin include hydrocarbon resins, polycarbonates, polyphenylene sulfides, polyethersulfones, polyetherimides, polyimides, petroleum resins, and novolac resins. The thermoplastic resin may contain a hydrocarbon resin or may be a hydrocarbon resin.

[0032] Hydrocarbon resins are resins whose main skeleton is composed of hydrocarbons. Examples of such hydrocarbon resins include ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-non-conjugated diene copolymers, ethylene-1-butene-non-conjugated diene copolymers, ethylene-propylene-1-butene-non-conjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butylene-styrene block copolymers (SEBS), and styrene-ethylene-propylene-styrene block copolymers (SEPS). These hydrocarbon resins may be hydrogenated. Furthermore, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Among these, the hydrocarbon resin may contain a hydrocarbon resin having a monomer unit derived from styrene (i.e., a styrene-based resin), or may be a styrene-based resin. More specifically, the hydrocarbon resin may contain a styrene-ethylene-butylene-styrene block copolymer (SEBS), or may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0033] The content of the hydrocarbon resin (or styrene-based resin) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more, based on the total amount of the thermoplastic resin. The content of the hydrocarbon resin (or styrene-based resin) may be 100% by mass or less, based on the total amount of the thermoplastic resin. When the content of the hydrocarbon resin (or styrene-based resin) is within this range, it tends to be easier to adjust the storage modulus of the thermosetting resin film to a desired range, and the effects of the present disclosure tend to be more pronounced. The thermoplastic resin may be composed of a hydrocarbon resin (or a styrene-based resin).

[0034] The content of the styrene-based resin (or SEBS) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more, based on the total amount of the hydrocarbon resin. The content of the styrene-based resin (or SEBS) may be 100% by mass or less, based on the total amount of the hydrocarbon resin. When the content of the styrene-based resin (or SEBS) is within this range, it tends to be easier to adjust the storage modulus of the thermosetting resin film to a desired range, and the effects of the present disclosure tend to be more pronounced. The hydrocarbon resin may be composed of a styrene-based resin (or SEBS).

[0035] When the hydrocarbon resin includes a styrene-based resin, the content of the monomer units derived from styrene may be 10 to 22.5% by mass, based on the total amount of the hydrocarbon resin (or thermoplastic resin). When the content of the monomer units derived from styrene is within this range, the storage modulus of the thermosetting resin film tends to be easily adjusted to a desired range, and the effects of the present disclosure tend to be more pronounced. Note that when two or more styrene-based resins are used in combination, the content of the monomer units derived from styrene refers to the total content of the monomer units derived from styrene in the two or more styrene-based resins. The content of the monomer units derived from styrene may be 11% by mass or more, 12% by mass or more, or 13% by mass or more, based on the total amount of the hydrocarbon resin (or thermoplastic resin), and may be 22% by mass or less, or 21.5% by mass or less.

[0036] When the thermosetting resin component contains a styrene-based resin as the thermoplastic resin (hydrocarbon resin), the content of the styrene-derived monomer units may be 7 to 16% by mass, based on the total amount of the thermosetting resin component. When the content of the styrene-derived monomer units is within this range, the storage modulus of the thermosetting resin film tends to be easily adjusted to a desired range, and the effects of the present disclosure tend to be more pronounced. When two or more styrene-based resins are used in combination, the content of the styrene-derived monomer units refers to the total content of the styrene-derived monomer units in the two or more styrene-based resins. The content of the styrene-derived monomer units may be 7.5% by mass or more, 8% by mass or more, or 9% by mass or more, based on the total amount of the thermosetting resin component, and may be 15.5% by mass or less, or 15% by mass or less.

[0037] The Tg of the thermoplastic resin may be −100 to 500° C., −50 to 300° C., or −50 to 50° C. If the Tg of the thermoplastic resin is 500° C. or less, when a film-like temporary fixing material is formed, flexibility tends to be easily ensured and low-temperature application tends to be improved. If the Tg of the thermoplastic resin is −100° C. or more, when a film-like temporary fixing material is formed, deterioration in handleability and releasability due to excessive flexibility tends to be suppressed.

[0038] The Tg of a thermoplastic resin is the midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the midpoint glass transition temperature calculated by a method in accordance with JIS K7121:2012, where the change in calorific value is measured at a temperature rise rate of 10°C / min and a measurement temperature of -80 to 80°C.

[0039] The weight-average molecular weight (Mw) of the thermoplastic resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight-average molecular weight is 10,000 or more, the heat resistance of the temporary fixing material layer tends to be easily ensured. When the weight-average molecular weight is 5,000,000 or less, when a thermosetting resin film is formed, a decrease in flow and a decrease in adhesion tend to be easily suppressed. The weight-average molecular weight is a polystyrene-equivalent value obtained by gel permeation chromatography (GPC) using a calibration curve with standard polystyrene.

[0040] The content of the thermoplastic resin may be, for example, 40 to 90% by mass based on the total amount of the thermosetting resin components. The content of the thermoplastic resin may be, for example, 50% by mass or more or 60% by mass or more, and 85% by mass or less or 80% by mass or less, based on the total amount of the thermosetting resin components. When the content of the thermoplastic resin is within this range, the thin film formability and flatness of the temporary fixing material layer tend to be better.

[0041] A thermosetting resin is a resin that exhibits curability when heated, and is a concept that does not include the above-mentioned thermoplastic resins (hydrocarbon resins). Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. Among these, the thermosetting resin may be an epoxy resin because it has excellent heat resistance, workability, and reliability.

[0042] The epoxy resin is not particularly limited as long as it has heat resistance upon curing. Examples of epoxy resins include bifunctional epoxy resins such as bisphenol A epoxy, novolac epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins, and alicyclic epoxy resins such as dicyclopentadiene epoxy resins. The epoxy resin may also be, for example, a multifunctional epoxy resin, a glycidylamine epoxy resin, or a heterocycle-containing epoxy resin. Among these, the epoxy resin may contain an alicyclic epoxy resin from the viewpoint of heat resistance and weather resistance.

[0043] When an epoxy resin is used as the thermosetting resin, the thermosetting resin may be a combination of an epoxy resin and an epoxy resin curing agent. A commonly used known curing agent can be used as the epoxy resin curing agent. Examples of epoxy resin curing agents include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (such as bisphenol A, bisphenol F, and bisphenol S), and phenolic resins (such as phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, and phenol aralkyl resins).

[0044] The content of the thermosetting resin may be, for example, 10 to 60% by mass based on the total amount of the thermosetting resin components. The content of the thermosetting resin may be, for example, 15% by mass or more or 20% by mass or more, and 50% by mass or less or 40% by mass or less, based on the total amount of the thermosetting resin components. When the content of the thermosetting resin is within this range, the thin film formability and flatness of the temporary fixing material layer tend to be better.

[0045] The thermosetting resin component may further contain a curing accelerator that accelerates the curing reaction of the thermosetting resin, such as an epoxy resin. Examples of the curing accelerator include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate.

[0046] The content of the curing accelerator may be 0.01 to 5% by mass based on the total amount of the thermosetting resin. When the content of the curing accelerator is within this range, the curability of the thermosetting resin component and the heat resistance after curing tend to be better. The content of the curing accelerator may be 1.0% by mass or more, 1.2% by mass or more, or 1.5% by mass or more based on the total amount of the thermosetting resin, since this makes it easy to adjust the storage modulus at 270°C and the storage modulus at 25°C to within the specified range, and may be 3.0% by mass or less, 2.5% by mass or less, or 2.0% by mass or less.

[0047] The thermosetting resin component may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it polymerizes upon heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and ease of availability, the polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, and arylated vinyl. Among these, the polymerizable monomer may be a (meth)acrylate. The (meth)acrylate may be monofunctional (monofunctional), bifunctional, or trifunctional or higher functional, but may also be a bifunctional or higher functional (meth)acrylate from the viewpoint of obtaining sufficient curability.

[0048] The content of the polymerizable monomer may be 0 to 50 mass % based on the total amount of the thermosetting resin component.

[0049] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light, etc. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

[0050] The content of the polymerization initiator may be 0.01 to 5% by mass based on the total amount of polymerizable monomers.

[0051] The thermosetting resin component may be a main component of the thermosetting resin layer (thermosetting resin film). The content of the thermosetting resin component may be 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, or 98% by mass or more, based on the total amount of the thermosetting resin layer (thermosetting resin film).

[0052] The thermosetting resin layer (thermosetting resin film) may contain other components in addition to the thermosetting resin component, such as an insulating filler, a sensitizer, and an antioxidant.

[0053] The insulating filler can be added for the purpose of imparting low thermal expansion, low moisture absorption, etc. to the temporary fixing material layer. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. From the viewpoint of dispersibility in a solvent, the insulating filler may be particles whose surfaces have been treated with a surface treatment agent. The surface treatment agent may be, for example, a silane coupling agent.

[0054] The content of the insulating filler may be 0.1 to 20% by mass based on the total amount of the thermosetting resin component. When the content of the insulating filler is within this range, heat resistance tends to be further improved without impeding light transmission. Furthermore, when the content of the insulating filler is within this range, it may also contribute to easy releasability.

[0055] Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone.

[0056] The content of the sensitizer may be 0.01 to 10 mass % based on the total amount of the thermosetting resin component. When the content of the sensitizer is within this range, there tends to be little effect on the properties of the thermosetting resin component and thin film properties.

[0057] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

[0058] The content of the antioxidant may be 0.1 to 10 mass% based on the total amount of the thermosetting resin component. When the content of the antioxidant is within this range, decomposition of the thermosetting resin component tends to be suppressed, and contamination tends to be prevented.

[0059] 2( a) and 2(b) are schematic cross-sectional views showing one embodiment of a method for producing a temporary fixing laminate 20. The temporary fixing laminate 20 can be obtained, for example, by a method including a step of preparing a laminate precursor 10 having, in this order from the support member 2, a light absorbing layer 4, and a thermosetting resin layer 6 containing a thermosetting resin component, and a step of heating the laminate precursor 10 to form a temporary fixing material layer 6c containing a cured product of the thermosetting resin component.

[0060] The laminate precursor 10 can be obtained, for example, by a method including a step of providing a light absorbing layer 4 on a support member 2 and a step of attaching a thermosetting resin film containing a thermosetting resin component onto the light absorbing layer 4 to form a thermosetting resin layer 6.

[0061] The light absorbing layer 4 can be provided on the support member 2 by physical vapor deposition (PVD) such as vacuum deposition or sputtering, or chemical vapor deposition (CVD) such as plasma-enhanced chemical vapor deposition. Alternatively, the light absorbing layer 4 can be provided on the support member 2 by electrolytic plating or electroless plating. Physical vapor deposition makes it possible to efficiently form the light absorbing layer 4 that covers the surface of the support member 2, even if the support member 2 has a large area.

[0062] To prepare a thermosetting resin film for forming the thermosetting resin layer 6, for example, first, the components constituting the thermosetting resin component are dissolved or dispersed in a solvent by stirring, mixing, kneading, or the like to prepare a varnish of the thermosetting resin component. The varnish of the thermosetting resin component is then applied to a support film that has been subjected to a release treatment using a knife coater, roll coater, applicator, comma coater, die coater, or the like, and the solvent is then volatilized by heating to form a thermosetting resin film made of the thermosetting resin component on the support film. The thickness of the thermosetting resin film can be adjusted by adjusting the amount of varnish of the thermosetting resin component applied.

[0063] The solvent used in preparing the varnish of the thermosetting resin component is not particularly limited as long as it has the property of being able to uniformly dissolve or disperse each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. Among these, the solvent may be toluene, xylene, heptane, or cyclohexanone from the viewpoints of solubility and boiling point. The concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish.

[0064] The stirring, mixing or kneading of the thermosetting resin component during preparation of the varnish can be carried out using, for example, a stirrer, a kneading machine, a three-roll mill, a ball mill, a bead mill, a homodisper or the like.

[0065] Examples of the support film include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer films. The thickness of the support film may be, for example, 1 to 250 μm.

[0066] The heating conditions for volatilizing the solvent from the varnish of the thermosetting resin component applied to the support film can be appropriately set depending on the solvent used, etc. The heating conditions may be, for example, 40 to 120°C for 0.1 to 30 minutes.

[0067] Examples of methods for attaching a thermosetting resin film onto the light absorbing layer 4 include roll lamination, vacuum lamination, and hot pressing. Lamination can be performed under temperature conditions of, for example, 0 to 120°C.

[0068] From the viewpoint of stress relaxation, the thickness of the thermosetting resin layer 6 (thermosetting resin film) may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less.

[0069] Subsequently, a temporary fixing material layer 6c containing a cured product of the thermosetting resin component is formed by thermally curing the thermosetting resin component of the thermosetting resin layer 6 of the obtained laminate precursor 10. The thermal curing conditions may be, for example, 150 to 300°C or 180 to 250°C, and 1 to 180 minutes or 10 to 120 minutes.

[0070] From the viewpoint of stress relaxation, the thickness of the temporary fixing material layer 6c may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less.

[0071] In this manner, the temporary fixing laminate 20 can be obtained from the laminate precursor 10 .

[0072] [Method for manufacturing semiconductor device] The method for manufacturing a semiconductor device of this embodiment includes the steps of preparing the temporary fixing laminate (preparation step), temporarily fixing a semiconductor member to a support member via a light absorbing layer and a temporary fixing material layer (temporary fixing step), processing the semiconductor member temporarily fixed to the support member (processing step), and irradiating the light absorbing layer of the temporary fixing laminate from the support member side with light to separate the semiconductor member from the support member (separation step). According to the method for manufacturing a semiconductor device of this embodiment, the use of the temporary fixing laminate makes it possible to sufficiently fix the semiconductor member and the support member, and further makes it possible to easily separate the processed semiconductor member from the support member while suppressing the generation of residues.

[0073] 3(a) and 3(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. In the preparation step, the above-mentioned temporary fixing laminate 20 is prepared for temporarily fixing a semiconductor member to a support member while the semiconductor member is being processed in order to manufacture a semiconductor device (see FIG. 3(a)).

[0074] (Temporary Fixing Process) In the temporary fixing process, the semiconductor member 40 is temporarily fixed to the support member 2 via the light absorbing layer 4 and the temporary fixing material layer 6c. The temporary fixing material layer 6c has a surface S on the side opposite to the light absorbing layer 4 of the temporary fixing material layer 6c. In the temporary fixing process, for example, the semiconductor member 40 can be temporarily fixed to the support member 2 by pressing the semiconductor member 40 in a state where the semiconductor member 40 is placed on the temporary fixing material layer 6c (see FIG. 3(b)) (see FIG. 3(b)). In other words, the semiconductor member 40 can be temporarily adhered to the support member 2 via the light absorbing layer 4 and the temporary fixing material layer 6c containing a cured product of a thermosetting resin component. In this way, a laminate 30 is formed, which includes the temporary fixing laminate 20 and the semiconductor member 40 provided on the temporary fixing material layer 6c of the temporary fixing laminate 20.

[0075] Examples of the semiconductor member 40 include a semiconductor substrate 42 and a rewiring layer 44. When the semiconductor member 40 includes the semiconductor substrate 42 and the rewiring layer 44, the semiconductor member 40 is temporarily fixed to the support member 2 via the light absorbing layer 4 and the temporary fixing material layer 6c, with the rewiring layer 44 facing the temporary fixing material layer 6c. The semiconductor member 40 may further include external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 3( a), multiple semiconductor members 40 are disposed on the surface S of the temporary fixing material layer 6c, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, from the viewpoints of miniaturizing and thinning the semiconductor device as well as suppressing cracking during transportation and processing.

[0076] The semiconductor member 40 arranged on the temporary fixing material layer 6c is pressure-bonded to the temporary fixing material layer 6c using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressure-bonding conditions may be an atmospheric pressure of 1 hPa or less, a pressure of 1 MPa, a pressure-bonding temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressure-bonding conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressure-bonding temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0077] 4(a), 4(b), and 4(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. In the processing step, a semiconductor member 40 temporarily fixed to a support member 2 is processed. FIG. 4(a) shows an example of processing including thinning of a semiconductor substrate, and the processed semiconductor member 40a has a thinned semiconductor substrate 42a and a rewiring layer 44. The processing of the semiconductor member is not limited to this, and can include, for example, thinning of the semiconductor substrate, dividing (dicing) the semiconductor member, forming a through electrode (through-silicon electrode), etching, plating reflow processing, sputtering, or a combination thereof.

[0078] After processing the semiconductor member 40, an encapsulating layer 50 is formed to encapsulate the processed semiconductor member 40a, as shown in FIG. 4(b). The encapsulating layer 50 can be formed using an encapsulating material typically used in the manufacture of semiconductor devices. For example, the encapsulating layer 50 may be formed from a thermosetting resin composition. Examples of thermosetting resin compositions used for the encapsulating layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The encapsulating layer 50 and the thermosetting resin composition used to form the encapsulating layer 50 may contain additives such as a filler and / or a flame retardant.

[0079] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a granular material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating machine, or the like is used. For example, using these machines, the processed semiconductor member 40a is covered with a sealing film that has been heat-melted under conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes, thereby forming the sealing layer 50. The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or greater than the thickness of the processed semiconductor member 40a. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0080] After the sealing layer 50 is formed, as shown in FIG. 4C, the sealing layer 50 and the temporary fixing material layer 6c may be divided into a plurality of parts, each of which includes one processed semiconductor member 40a.

[0081] 5( a ) and 5 ( b ) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. In the separation step, light is irradiated onto the light absorbing layer of the temporary fixing laminate from the support member side, and the semiconductor member is separated from the support member.

[0082] As shown in FIG. 5( a), light A is irradiated onto the light absorbing layer 4 of the temporary fixing laminate 20 from the support member 2 side to separate the processed semiconductor member 40a from the support member 2. The irradiation of light A causes the light absorbing layer 4 to absorb the light and instantaneously generate heat. The generated heat may cause, for example, melting of the temporary fixing material layer 6c, thermal stress between the support member 2 and the processed semiconductor member 40a, and scattering of the light absorbing layer 4. One or more of these phenomena may be the main cause of cohesive peeling, interfacial peeling, etc., which may facilitate separation of the processed semiconductor member 40a from the support member 2. To separate the processed semiconductor member 40a from the support member 2, slight stress may be applied to the processed semiconductor member 40a in addition to the irradiation of light A.

[0083] The light A includes at least infrared light, whose wavelength is usually 700 nm to 1 mm.

[0084] The light A in the separation process may be coherent light. Coherent light is an electromagnetic wave with properties such as high coherence, high directionality, and high monochromaticity. Coherent light tends to be highly intense because light of the same wavelength and in-phase is reinforced and combined. Laser light is generally coherent light. Examples of laser light include YAG laser, fiber laser, semiconductor laser, helium-neon laser, argon laser, and excimer laser. The wavelength of the laser light may be 1300 nm or less. A wavelength of 1300 nm or less suppresses light absorption by the support member 2 and increases light absorption by the metal layer 12, making it possible to peel the metal layer 12 with lower light irradiation energy. The coherent light may be pulsed light.

[0085] The light A in the separation process may be incoherent light. Incoherent light is non-coherent light, an electromagnetic wave with properties such as no interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be considered light excluding laser light. The irradiation area of ​​incoherent light is generally much larger than that of coherent light (i.e., laser light), so the number of irradiations can be reduced. For example, a single irradiation can cause separation of multiple processed semiconductor members 40a. The incoherent light may include infrared light. The incoherent light may be pulsed light.

[0086] The light source is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that uses light emission by application and discharge in an arc tube filled with xenon gas. A xenon lamp discharges while repeatedly ionizing and exciting, and therefore stably emits a continuous range of wavelengths from the ultraviolet to the infrared region. Xenon lamps require a shorter start-up time than lamps such as metal halide lamps, and therefore can significantly reduce the time required for the process. Furthermore, although light emission requires the application of a high voltage, which generates high heat instantaneously, xenon lamps are advantageous in that they have a short cooling time and allow for continuous operation.

[0087] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporary fixing material layer), irradiation energy, etc., and these can be set arbitrarily depending on the number of irradiations, etc. From the viewpoint of reducing damage to the processed semiconductor member 40a, the irradiation conditions may be set so that the processed semiconductor member 40a can be separated by a single irradiation.

[0088] A portion of the temporary fixing material layer 6c may remain as residue on the separated, processed semiconductor member 40a. The residue is removed as shown in FIG. 5(b). The residue may be removed, for example, by washing with a solvent or by peeling. Examples of solvents include, but are not limited to, ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used alone or in combination of two or more. To remove the residue, the processed semiconductor member 40a may be immersed in a solvent or ultrasonically cleaned. The processed semiconductor member 40a may also be heated at a low temperature of approximately 100°C or less.

[0089] By the above-described exemplary method, a semiconductor element 60 including the processed semiconductor member 40a can be obtained. The obtained semiconductor element 60 can be connected to another semiconductor chip or a semiconductor element mounting substrate to manufacture a semiconductor device.

[0090] The present disclosure will be described in more detail below with reference to examples (production examples), although the present disclosure is not limited to these examples (production examples).

[0091] Production Examples 1 to 5: Preparation of thermosetting resin film and evaluation of temporary fixing material layer <Preparation of thermosetting resin film> The following components were used in preparing the thermosetting resin film.

[0092] (A) Thermoplastic resins (A-1a) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (Tuftec M1913, manufactured by Asahi Kasei Corporation, styrene content: 30% by mass), used as a 25% by mass xylene solution (A-2a) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (Tuftec M1943, manufactured by Asahi Kasei Corporation, styrene content: 20% by mass), used as a 25% by mass xylene solution (a-1b) Phenoxy resin (Phenototo ZX-1356-2, manufactured by Nippon Steel Chemical & Material Co., Ltd.), used as a 25% by mass cyclohexanone solution (B) Thermosetting resins (B-1a) Dicyclopentadiene-type epoxy resin (HP7200H, manufactured by DIC Corporation), used as a 50% by mass xylene solution (B-1b) Dicyclopentadiene type epoxy resin (HP7200H, manufactured by DIC Corporation), used as a 50% by mass solution in cyclohexanone (C) Curing accelerator (C-1b) Imidazole derivative (2PZ-CN, manufactured by Shikoku Chemical Industry Co., Ltd.), used as a 10% by mass solution in cyclohexanone (D) Antioxidant (D-1a) Hindered phenol derivative (AO-60, manufactured by ADEKA Corporation), used as a 10% by mass solution in xylene (D-1b) Hindered phenol derivative (AO-60, manufactured by ADEKA Corporation), used as a 10% by mass solution in cyclohexanone

[0093] The materials shown in Table 1 were mixed in the ratios shown in Table 1 (unit: parts by mass, the values ​​in Table 1 indicate the non-volatile content) to obtain varnishes of thermosetting resin components. The obtained varnishes of thermosetting resin components were applied to the release-treated surface of a polyethylene terephthalate (PET) film (Purex A31, manufactured by Toyobo Film Solutions Co., Ltd., thickness: 38 μm) as a support film using a precision coater. The coating was dried by heating at 100°C for 10 minutes to obtain thermosetting resin films of Production Examples 1 to 5 with a thickness of 50 μm.

[0094] <Evaluation of Temporary Fixing Material Layer> 1. Indentation Depth Indentation depth was measured in accordance with ISO 14577 by conducting an indentation test using a nanoindenter (Hysitron TI980, Bruker Japan Co., Ltd.) and a Berkovich indenter using a nanoindentation method. Each thermosetting resin film was attached to a glass slide using a roll laminator, and the support film was peeled off to obtain a laminate including a glass slide and a thermosetting resin layer provided on the glass slide. At this time, the surface of the thermosetting resin layer in contact with the support film was the surface of the temporary fixing material layer on which the semiconductor member was disposed. Next, the prepared laminate was heated in a dryer at 200 ° C. for 1 hour to cure the thermosetting resin component of the thermosetting resin layer and form a temporary fixing material layer containing a cured product of the thermosetting resin component, thereby obtaining test specimens having the temporary fixing material layers of Production Examples 1 to 5.

[0095] Next, the obtained test specimen was fixed to the stage of a nanoindenter, and a Berkovich indenter was brought into contact with the surface of the temporary fixing material layer of the test specimen. An indentation test was performed at 25°C, increasing the load at a loading rate of 20 μN / s for 5 seconds. After the load reached 100 μN, it was held at 100 μN for 2 seconds, and then reduced to 0 mN at an unloading rate of 20 μN / s for 5 seconds. The depth to which the Berkovich indenter was pressed into the temporary fixing material layer was measured using the nanoindenter. The indentation test was performed at five random points, and the median of the obtained depths was taken as the indentation depth. The results are shown in Table 1.

[0096] (Indentation test conditions) Indenter: Berkovich indenter Loading speed: 20 μN / sec Loading time: 5 sec (maximum load: 100 μN) Holding time: 2 sec Unloading speed: 20 μN / sec

[0097] 2. Surface Roughness The surface roughness was determined by preparing a test specimen similar to that in "1. Indentation Depth" and measuring the surface of the temporary fixing material layer of Production Examples 1 to 5 using a stylus-type step surface profiler (XP-2, manufactured by Ambios Technology). The measurement was carried out under the following conditions. The results are shown in Table 1.

[0098] (Measurement conditions) Load: 4.9 x 10 －６N (5mgf) Moving speed: 0.3mm / sec Measurement length: 30mm

[0099] 3. Surface Tack Strength For the surface tack strength, a test specimen similar to that in "1. Indentation Depth" was prepared and left to stand for 1 minute on the 30°C stage of a probe tack testing machine (TAC-II, manufactured by Rhesca Corporation). Subsequently, the surface tack strength of the temporary fixing material layers of Production Examples 1 to 5 was determined using the probe tack testing machine under the following measurement conditions. The results are shown in Table 1.

[0100] (Measurement conditions) Probe: Made of SUS (stainless steel), diameter 5 mm Push-in / pull-out speed: 600 mm / sec Push-in time: 1 sec

[0101] 4. 90° Peel Strength The thermosetting resin films of Production Examples 1 to 5 were heated in a dryer at 200°C for 1 hour to cure the thermosetting resin component of the thermosetting resin layer, forming temporary fixing material layers containing the cured thermosetting resin component of Production Examples 1 to 5. The support film was then peeled off, and the surface of the temporary fixing material layer that had been in contact with the support film was pressure-bonded to a silicon wafer using a vacuum laminator at a temperature of 80°C and a pressure of 0.5 MPa for 120 seconds. The temporary fixing material layer was then cut together with the silicon wafer into a 1 cm width to obtain test specimens equipped with the temporary fixing material layers of Production Examples 1 to 5. A peel test was then performed on the test specimens at a speed of 50 mm / min using a peel tester (EZ-S, manufactured by Shimadzu Corporation) set to a peel angle of 90°, and the 90° peel strength of the temporary fixing material layer relative to the silicon wafer was measured. The results are shown in Table 1. In addition, the temporary fixing material layer of Production Example 5, which was produced from the thermosetting resin film of Production Example 5, easily peeled off from the silicon wafer, and the 90° peel strength could not be measured.

[0102] 5. Appearance Evaluation The thermosetting resin films of Production Examples 1 to 5 were temporarily pressure-bonded on the surface opposite the support film to a 6-inch glass wafer using a vacuum laminator under conditions of 80°C temperature / 0.5 MPa pressure / 120 seconds for 120 seconds, and then heated in a dryer at 200°C for 1 hour to obtain multiple laminates equipped with the temporary fixing material layers of Production Examples 1 to 5. A silicon wafer was then pressure-bonded onto the temporary fixing material layer of the laminate under weak conditions (150°C temperature / 0.5 MPa pressure / 120 seconds for 120 seconds) or strong conditions (150°C temperature / 0.7 MPa pressure / 120 seconds for 120 seconds for 120 seconds) to obtain test specimens equipped with the temporary fixing material layers of Production Examples 1 to 5. The adhesion between the temporary fixing material layer and the silicon wafer of the obtained test specimens was visually observed and evaluated based on the following evaluation criteria. The results are shown in Table 1. S: After pressure bonding under weak conditions, no lifting of the silicon wafer was observed. A: After compression bonding under strong conditions, no lifting of the silicon wafer was observed. B: After compression bonding under strong conditions, slight lifting of the silicon wafer was observed. C: After compression bonding under strong conditions, the silicon wafer peeled off easily.

[0103]

[0104] As shown in Table 1, the temporary fixing material layers of Production Examples 1 to 4, which were made from the thermosetting resin films of Production Examples 1 to 4, in which the indentation depth measured under specified conditions was 600 nm or more, were able to measure the 90° peel strength against the silicon wafer and had sufficient adhesive strength with the silicon wafer. On the other hand, the temporary fixing material layer of Production Example 5, which was made from the thermosetting resin film of Production Example 5, in which the indentation depth did not satisfy this condition, easily peeled off from the silicon wafer, and the 90° peel strength could not be measured. These results suggest that the manufacturing method of the semiconductor device disclosed herein is capable of sufficiently fixing the semiconductor member and the support member.

[0105] According to the present disclosure, a method for manufacturing a semiconductor device, which includes a step of processing a semiconductor member temporarily fixed to a support member, is provided, which is capable of sufficiently fixing the semiconductor member and the support member. Furthermore, some embodiments of the method for manufacturing a semiconductor device tend to be able to sufficiently reduce peeling residue after separating the semiconductor member from the support member. Furthermore, according to the present disclosure, a temporary fixing laminate for use in such a method for manufacturing a semiconductor device is provided.

[0106] 2...support member, 4...light absorbing layer, 6...thermosetting resin layer, 6c...temporary fixing material layer, 10...laminated precursor, 20...temporary fixing laminate, 30...laminated body, 40...semiconductor member, 40a...semiconductor member after processing, 42...semiconductor substrate, 42a...semiconductor substrate after thinning, 44...rewiring layer, 50...sealing layer, 60...semiconductor element.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate having, in this order from the support member, a light absorbing layer, and a temporary fixing material layer containing a cured product of a thermosetting resin component; temporarily fixing a semiconductor member to the support member via the light absorbing layer and the temporary fixing material layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light absorbing layer of the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member, wherein a nanoindentation method using a Berkovich indenter is used on the surface of the temporary fixing material layer on which the semiconductor member is located, at 25°C, increasing the load at a loading rate of 20 μN / sec for 5 seconds, and after the load reaches 100 μN, maintaining the load at 100 μN for 2 seconds, and reducing the load at an unloading rate of 20 μN / sec for 5 seconds until the load is unloaded to 0 mN, resulting in an indentation depth of 600 nm or more.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the surface roughness of the surface of the temporary fixing material layer on the side where the semiconductor member is placed is 50 nm or less.

3. The surface tack strength at 30° C. of the surface of the temporary fixing material layer on which the semiconductor member is placed is 9.8×10 －３ The method for manufacturing a semiconductor device according to claim 1 , wherein the number of the first and second electrodes is N or more.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the thermosetting resin component contains a thermoplastic resin and a thermosetting resin, and the thermoplastic resin contains a hydrocarbon resin.

5. The method for manufacturing a semiconductor device according to claim 4, wherein the hydrocarbon resin includes a hydrocarbon resin having a monomer unit derived from styrene.

6. A temporary fixing laminate used for temporarily fixing a semiconductor member and a support member, comprising, in this order from the support member, a support member, a light absorbing layer, and a temporary fixing material layer containing a cured product of a thermosetting resin component, wherein the surface of the temporary fixing material layer on which the semiconductor member is placed is subjected to a nanoindentation method using a Berkovich indenter at 25°C, where a load is increased for 5 seconds at a loading rate of 20 μN / sec, the load reaches 100 μN, and then the load is maintained at 100 μN for 2 seconds, and the load is reduced for 5 seconds at an unloading rate of 20 μN / sec until the load is unloaded to 0 mN, and the indentation depth is 600 nm or more.

7. The temporary fixing laminate according to claim 6, wherein the surface roughness of the surface of the temporary fixing material layer on the side where the semiconductor member is placed is 50 nm or less.

8. The surface tack strength at 30° C. of the surface of the temporary fixing material layer on which the semiconductor member is placed is 9.8×10 －３ The temporary fixing laminate according to claim 6 , wherein the number of the first and second electrodes is N or more.

9. The temporary fixing laminate according to any one of claims 6 to 8, wherein the thermosetting resin component contains a thermoplastic resin and a thermosetting resin, and the thermoplastic resin contains a hydrocarbon resin.

10. The temporary fixing laminate according to claim 9, wherein the hydrocarbon resin contains a hydrocarbon resin having a monomer unit derived from styrene.