Method for manufacturing emissive display device

Abstract

The present invention provides a method for manufacturing an emissive display device utilizing photolithography, the method for manufacturing an emissive display device allowing an unwanted resist layer and an unwanted EL layer stacked thereon to be peeled off from the emissive display device without using a peeling solution or a dry etching device.　The method is for manufacturing an emissive display device using photolithography patterning. In this method for manufacturing an emissive display device, an EL layer is stacked by using a resist-patterned resist layer as a mask, and after stacking, an unwanted resist layer with the EL layer stacked on the upper side thereof is peeled off from the emissive display device using a mechanical peeling means.

Description

Method for manufacturing a light-emitting display device

[0001] The present invention relates to a method for manufacturing a light-emitting display device, and more particularly to a method for manufacturing a light-emitting display device, including an organic EL device using organic light-emitting diode (OLED) technology, using photolithographic patterning.

[0002] Organic EL displays based on organic light-emitting diode (OLED) technology have recently become popular and have significant advantages over many other display technologies. A method for manufacturing organic EL display panels using photolithography is known (see, for example, Patent Documents 1 and 2).

[0003] International Publication No. 2016 / 019273 Japanese Patent Application Laid-Open No. 2022-75254

[0004] In photolithography, a laminate constituting an organic EL display is exposed to a developer and a stripper during the manufacturing process. For example, Patent Document 1, paragraph

[0088] and elsewhere, describes the use of a fluorinated solvent for development. Patent Document 2, paragraph

[0065] and elsewhere, describes the use of a fluorinated liquid or an organic alkaline solution as a developer, and an organic alkaline solution, an aqueous solution, or a fluorinated liquid as a stripper. Because organic EL devices have poor water resistance, it is preferable that the developer and stripper used in the manufacturing process be water-free liquids. Furthermore, because fluorinated solvents are expensive and can damage components such as piping during the manufacturing process, it is preferable to use a non-fluorinated organic solvent. Furthermore, Patent Document 1, paragraph

[0048] , describes that "the fluorinated photoresist or the fluorinated base layer is applied using a fluorinated solvent," and describes the use of a fluorinated solvent as the solvent contained in the composition for forming a resist layer. As described above, in Patent Document 1 and the like, a fluorine-based solvent is used in the solvent, developer, and stripper contained in the resist layer-forming composition during the manufacturing process of an organic EL device. However, organic fluorine compounds (PFAS) have been identified as being harmful to humans and the environment, and environmental problems have been identified. When manufacturing an organic EL device using wet photolithography, there is no known method of using a solvent other than a fluorine-based solvent as the solvent, developer, or stripper contained in the resist layer-forming composition used during the manufacturing process, which has little effect on the organic EL device. Therefore, there is a need for a method of manufacturing a light-emitting display device (e.g., an organic EL device) using wet photolithography with a non-fluorine-based solvent.

[0005] Furthermore, when an unnecessary resist layer having an EL layer laminated thereon is peeled off from a light-emitting display device using a stripping solution, problems in processing such as pipe clogging due to the removed insoluble matter may occur, so it is more preferable to provide a method for manufacturing a light-emitting display device that does not cause such concerns. Furthermore, in view of these problems, a manufacturing method in which the EL layer is patterned by photolithography and dry etching is considered, but the dry etching method requires large and expensive manufacturing equipment, so there is a need for a simple manufacturing method.

[0006] The present invention has been made in consideration of the above circumstances, and aims to provide a method for manufacturing a light-emitting display device using photolithography, which can remove an unnecessary resist layer and an unnecessary EL layer laminated thereon from the light-emitting display device without using a stripping solution or dry etching equipment.

[0007] The present inventors have conducted extensive research to solve the above-mentioned problems and have completed the present invention having the following gist.

[0008] That is, the present invention encompasses the following: [A] A method for manufacturing a light-emitting display device, which manufactures a light-emitting display device using photolithographic patterning, comprising: laminating an EL layer using a resist layer on which a resist pattern has been formed as a mask; and after laminating, peeling an unnecessary resist layer together with an EL layer laminated on top of the unnecessary resist layer from the light-emitting display device using a mechanical peeling means, wherein the adhesion between the resist layer formed in manufacturing the light-emitting display device and a substrate of the light-emitting display device is adjusted to a size that prevents the resist layer from peeling away from the substrate in the step of patterning the resist layer and the step of laminating the EL layer, and to a size that allows the resist layer to peel away from the substrate in the step of peeling the resist layer from the light-emitting display device using the mechanical peeling means. [B] A manufacturing apparatus for a light-emitting display device used when manufacturing a light-emitting display device using photolithography patterning, the manufacturing apparatus for a light-emitting display device comprising: an adhesive film; means for adhering the adhesive film to a light-emitting display device after an EL layer has been laminated thereon; and means for peeling off an unnecessary resist layer having an EL layer laminated on top of it from the light-emitting display device by pulling away the adhesive film adhered to the light-emitting display device from the light-emitting display device.

[0009] According to the present invention, there can be provided a method for manufacturing a light-emitting display device using photolithography, which can remove an unnecessary resist layer and an unnecessary EL layer laminated thereon from a light-emitting display device without using a stripping solution or a dry etching device.

[0010] [Correction under Rule 91 12.02.2025] A schematic cross-sectional view of an example of an EL device. A schematic cross-sectional view of another example of an EL device. A schematic cross-sectional view of another example of an EL device. A diagram (1) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (2) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (3) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (4) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (5) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (6) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (7) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. FIG. 8 is a diagram (part 8) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 9 is a diagram (part 9) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 10 is a diagram (part 10) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 11 is a diagram (part 1) for explaining a modified example (second embodiment) of one mode of manufacturing a laminate that constitutes a light-emitting display device. FIG. 2 is a diagram (part 2) for explaining a modified example (second embodiment) of one mode of manufacturing a laminate that constitutes a light-emitting display device. A schematic cross-sectional view of an example of an apparatus for manufacturing a light-emitting display device. FIG. 12 is a diagram (part 1) for explaining another mode (third embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 2 is a diagram (part 2) for explaining another mode (third embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 3 is a diagram (part 3) for explaining another mode (third embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 10 is a diagram (part 4) for explaining another mode (third embodiment) of manufacturing a laminate that constitutes a light-emitting display device.FIG. 5 is a diagram (part 5) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 6 is a diagram (part 6) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 7 is a diagram (part 7) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 8 is a diagram (part 9) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 10 is a diagram (part 11) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 12 is a diagram (part 12) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 13 is a diagram (No. 13) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 14 is a diagram (No. 14) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 15 is a diagram (No. 15) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 16 is a diagram (No. 16) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 17 is a diagram (No. 17) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 18 is a diagram (No. 18) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 19 is a diagram (No. 19) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 20 is a diagram (No. 20) for explaining another aspect (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device.

[0011] (Method for manufacturing a light-emitting display device) The present invention relates to a method for manufacturing a light-emitting display device using photolithographic patterning. One of the features of the method for manufacturing a light-emitting display device of the present invention is that an EL layer is laminated using a resist layer having a resist pattern formed thereon as a mask, and after lamination, an unnecessary resist layer is peeled off from the light-emitting display device together with the EL layer laminated on top of the unnecessary resist layer using a mechanical peeling means. In other words, the method for manufacturing a light-emitting display device of the present invention is "a method for manufacturing a light-emitting display device using photolithographic patterning, comprising: laminating an EL layer using a resist layer having a resist pattern formed thereon as a mask; and after lamination, peeling off the unnecessary resist layer from the light-emitting display device together with the EL layer laminated on top of the unnecessary resist layer using a mechanical peeling means."

[0012] <Light-Emitting Display Device> A light-emitting display device according to the manufacturing method of the present invention has, for example, the following configuration: a substrate; a plurality of electrodes arranged on the substrate in a first direction and a second direction; banks formed in a grid on the substrate and on the electrodes, surrounding each electrode; and an EL layer including a light-emitting layer arranged on the electrodes. The banks are formed to protrude beyond the electrodes in a third direction perpendicular to the first and second directions. Examples of light-emitting display devices include organic EL devices whose light-emitting layer is an organic EL layer and quantum dot EL devices whose light-emitting layer is an inorganic EL layer. A specific example of an organic EL device is an "OLED (Organic Light Emitting Diode)" (LED (Light-Emitting Diode) using an organic substance (organic) as the light-emitting material) device.

[0013] <<Specific Structure of Light-Emitting Display Devices (EL Devices)>> EL devices contain at least an anode that injects holes, a cathode that injects electrons, and an EL medium sandwiched between the electrodes, where the holes and electrons combine to emit light. EL devices are often provided on a substrate.

[0014] A schematic cross-sectional view of an example of an EL device is shown in FIG. 1A . Schematic cross-sectional views of other examples of EL devices are also shown in FIGS. 1B and 1C . An EL device 10 is shown in FIG. 1A , in which an electrode (e.g., an anode electrode) 2, a hole injection layer 3, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, an electron injection layer 7, and an upper electrode (e.g., a cathode electrode) 8 are stacked on a substrate. The layers between the anode electrode and the cathode electrode are collectively referred to as an EL layer (e.g., an EL vapor deposition layer or an EL coating layer) 9. Layers known to form an EL device other than those described above can be added. The number of layers can also be reduced, for example, as shown in FIG. 1B . A particularly preferred embodiment of the EL device shown in FIG. 1A is, for example, an organic EL device. 1A is an organic EL device, organic EL device 10 includes, on a substrate, an electrode (e.g., an anode electrode) 2, a hole injection layer 3, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, an electron injection layer 7, and an upper electrode (e.g., a cathode electrode) 8. The layers between the anode electrode and the cathode electrode are collectively referred to as organic EL layers (e.g., organic EL vapor-deposited layers) 9.

[0015] Another example of an EL device is an EL device with a structure in which the positive and negative electrodes of FIG. 1A are reversed. For example, the EL device 10 shown in FIG. 1C has an electrode (e.g., a cathode electrode) 2', an electron injection layer 3', an electron transport layer 4', an emissive layer 5', a hole transport layer 6', a hole injection layer 7', and an upper electrode (e.g., an anode electrode) 8' stacked on a substrate. The layers between the anode electrode and the cathode electrode are collectively referred to as an EL layer (e.g., an EL vapor deposition layer or an EL coating layer) 9'. In particular, a preferred embodiment of the EL device shown in FIG. 1C is a quantum dot EL device. When the EL device of FIG. 1C is a quantum dot EL device (inorganic EL device), the inorganic EL device 10 has an electrode (e.g., a cathode electrode) 2', an electron injection layer 3', an electron transport layer 4', an emissive layer 5', a hole transport layer 6', a hole injection layer 7', and an upper electrode (e.g., an anode electrode) 8' stacked on a substrate. The layers between the anode and cathode electrodes are collectively referred to as inorganic EL layers (eg, inorganic EL coating layers) 9'.

[0016] Anode Electrode When electroluminescence (EL) is viewed through the anode electrode, the anode electrode is essentially light-transmitting. The anode electrode may be a transparent electrode. Common transparent anode materials used in the present invention include, for example, indium-tin oxide (ITO), indium-zinc oxide (IZO), and tin oxide. However, other metal oxides, including but not limited to aluminum- or indium-doped zinc oxide, magnesium-indium oxide, and nickel-tungsten oxide, also work. In addition to these oxides, metal nitrides such as gallium nitride, metal selenides such as zinc selenide, and metal sulfides such as zinc sulfide can also be used as the anode. If electroluminescence (EL) is not viewed through the cathode, any of several conductive materials known to be usable in organic EL devices can be selected. For example, metals such as aluminum, molybdenum, gold, iridium, silver, and magnesium, the above-mentioned transparent conductive oxides, or combinations thereof can be used.

[0017] - Cathode Electrode - The upper electrode (cathode electrode) may be a metal electrode. If EL is visible through the cathode, it is transparent or nearly transparent. For such applications, the metal must be thin, preferably less than 25 nm, or a transparent conductive oxide (e.g., indium-tin oxide, indium-zinc oxide) may be used, or a combination of these materials may be used. If EL is not visible through the cathode, for example, any of several conductive materials known to be usable in organic EL devices may be selected. For example, metals such as aluminum, molybdenum, gold, iridium, silver, and magnesium, the above-mentioned transparent conductive oxides, or combinations thereof may be used.

[0018] Hole Injection Layer—The hole injection layer may be formed from one material or a mixture of materials. The hole injection layer may be divided into several layers with different compositions. The hole injection layer may improve the film-forming properties of the subsequent layer and facilitate hole injection into the hole injection layer. Suitable materials for the hole injection layer include, for example, thiophene-containing compounds, phosphazene compounds, certain aromatic amine compounds, porphyrin compounds, and phthalocyanine compounds. The hole injection layer may also include inorganic compounds such as metal oxides (e.g., molybdenum oxides), metal nitrides, metal carbides, complexes of metal ions and organic ligands, and complexes of transition metal ions and organic ligands.

[0019] -Hole transport layer- The hole transport layer can be formed of a single or a mixture of organic or inorganic compounds and can be divided into several layers. The hole transport layer can contain, for example, benzidine, carbazole, or tertiary arylamine, but can also contain thiophene or other electron-rich materials instead (or in addition).

[0020] -Emitting Layer- The following describes the emitting layer, divided into cases where it is composed of an organic EL layer (corresponding to an organic EL device) and cases where it is composed of an inorganic EL layer (corresponding to a quantum dot EL device). -Emitting Layer Composed of an Organic EL Layer- The emitting layer typically contains a host material and a light-emitting dopant. Injected holes and electrons recombine in the emitting layer. Host materials include hole transport layer materials, electron transport layer materials, mixtures of hole transport layer materials and electron transport layer materials, and ambipolar materials that already have the ability to transport holes and electrons. Examples of host materials for singlet emission include, but are not limited to, polycyclic aromatic compounds such as anthracene derivatives. Examples of host materials for triplet emission include, but are not limited to, carbazole compounds and aromatic amines. Typical singlet-emitting dopants are aromatic organic compounds, and typical triplet-emitting dopants are, but are not limited to, metal complexes of iridium or platinum.

[0021] --Light-emitting layer composed of inorganic EL layer-- The light-emitting layer is made of a quantum dot material or an oxide film. The quantum dot material may be at least one type of semiconductor nanocrystal selected from the group consisting of II-VI compound semiconductor nanocrystals, III-V compound semiconductor nanocrystals, IV-VI compound semiconductor nanocrystals, and Group IV compound semiconductor nanocrystals. Examples of II-VI compound semiconductor nanocrystals include binary compounds such as CdSe, CdTe, ZnS, ZnSe, and ZnTe; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, CdZnS, CdZnSe, and CdZnTe; and quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe. Examples of III-V compound semiconductor nanocrystals include binary compounds such as GaN, GaP, GaAs, GaSb, InP, InAs, or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, InNP, InNAs, InNSb, InPAs, InPSb, or GaAlNP; and quaternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb. Examples of IV-VI compound semiconductor nanocrystals include binary compounds such as PbS, PbSe, or PbTe; ternary compounds such as PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; and quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe. Examples of Group IV compound semiconductor nanocrystals include, but are not limited to, simple compounds such as Si and Ge; and binary compounds such as SiC and SiGe.The semiconductor nanocrystals described above preferably have a core / shell structure (core / shell nanocrystals) in which a shell is formed of a wide bandgap semiconductor material, such as CdSe / ZnS, CdSe / ZnSe, CdTe / ZnS, CdTe / ZnSe, CdSe / CdS, CdS / ZnS, CdS / ZeSe, InP / ZnS, or PbSe / ZnS. The oxide film is preferably composed of an oxide doped with a luminescent center. The luminescent center is not particularly limited, and transition metal ions or rare earth ions can be appropriately selected depending on the purpose, such as Ti, Cr, Mn, Cu, W, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb. The host oxide can be appropriately selected depending on the purpose, but it is preferable that the band gap energy is equal to or greater than the excitation energy of the luminescence center, and it is also preferable that the band gap energy is equal to or greater than the luminescence energy of the luminescence center. Examples of such host oxides include Al. ２ O ３ , Ga ２ O ３ , La ２ O ３ , ZrO ２ , YAO (Yttrium Aluminum Oxide), YGO (Yttrium Gadolinium Oxide), LAO (Lanthanum Aluminum Oxide), etc. The concentration of the luminescent center can be appropriately selected depending on the purpose, but for example, it is preferably 10 atom % or less of the host cation, and particularly preferably about 1 to 5 atom %.

[0022] The electron transport layer can be formed from a single or a mixture of organic or inorganic compounds. Typical electron transport layer materials are metal-oxine chelates such as Alq, phenanthroline derivatives such as BCP, triazene, benzimidazole, triazole, and oxadiazole, silane compounds such as silacyclopentadiene derivatives, and boron derivatives.

[0023] Electron Injection Layer—The electron injection layer may comprise an electron transport material and a reductive dopant at or near the interface between the cathode and the electron transport layer. The reductive dopant can be organic, inorganic, or a metal complex. Typical reductive dopants include alkali metals, such as cesium or alkali metal mixtures. The electron injection layer may also comprise an alkali metal complex, alkali metal salt, or alkali metal oxide (e.g., lithium quinolate, lithium fluoride, lithium oxide) that forms a reductive dopant on top of a cathode material deposit, such as aluminum.

[0024] Formation of Each Layer Methods for forming the EL medium material on the substrate include, for example, vapor deposition and coating. For example, there are many methods for depositing the EL medium material on the substrate, including, but not limited to, solution coating, vapor deposition, and transfer from a donor sheet. In embodiments of the present invention, at least some of the EL layers are formed by vapor deposition, for example, physical vapor deposition in a reduced pressure environment. In some embodiments, most or all of the EL layers are formed by vapor deposition. In particular, it is preferred that the organic EL layers be formed by vapor deposition.

[0025] [Correction under Rule 91 12.02.2025] Preferred embodiments of the method for manufacturing a light-emitting display device of the present invention include, for example, the following first, second, and third embodiments. The light-emitting display devices shown in Figures 2A to 2I, 2J to 2L (Figures 2A to 2I and 2J to 2L are also collectively referred to as "Figure 2"), and 4A to 4T (Figures 4A to 4T are also collectively referred to as "Figure 4") will be described below, taking organic EL devices as examples. However, quantum dot devices have the same configuration as organic EL devices, except for whether the light-emitting layer is an organic EL layer or an inorganic EL layer, and the configurations described below using Figures 2 and 4 can be similarly applied.

[0026] <First embodiment> The light-emitting display device according to the present invention can be manufactured, for example, through the following steps (i) to (iv): (i) forming a resist layer on a substrate on which electrodes and banks have been formed using a photosensitive resin composition (e.g., a positive-type photosensitive resin composition) containing a photosensitive component (e.g., a positive-type photosensitive component) and a solvent, (ii) exposing a region of the formed resist layer where an EL layer is to be formed and removing the exposed photosensitive portion by contacting the resist layer with a developer to obtain a resist pattern, (iii) laminating an EL layer on the upper side of the electrode on which the resist pattern has been formed using the resist pattern as a mask, and (iv) after lamination, peeling off the unnecessary resist layer together with the EL layer laminated on top of the unnecessary resist layer from the light-emitting display device using a mechanical peeling means.

[0027] Incidentally, "contacting" with the developer includes immersing in the developer or spraying with the developer. The above-mentioned step (iii) can be described in other words as a step of laminating an EL layer on top of a laminate in which a resist layer has been formed in step (i) on a substrate on which electrodes and banks have been formed, and the resist layer has been removed in step (ii) from the area where the EL layer is to be formed. The above-mentioned step (iv) can be described in other words as a step of peeling off the unnecessary resist layer on which the EL layer has been laminated from the light-emitting display device by using a mechanical peeling means for the laminate having the EL layer obtained in step (iii).

[0028] Furthermore, preferred embodiments of the method for manufacturing a light-emitting display device according to the present invention include a manufacturing method in which the steps (iii) to (iv) are, for example, the following steps (a) to (c), or a manufacturing method in which the steps (iii) to (iv) are, for example, the following steps (d) to (f):

[0029] (a) a step of laminating an EL layer on the upper side of an electrode on which a resist pattern has been formed, using the resist pattern as a mask; (b) a step of exposing the entire area in which the EL layer is laminated; and (c) a step of peeling off the unnecessary resist layer on which the EL layer is laminated from the light-emitting display device by bringing the EL layer into contact with (adhering to) a mechanical peeling means. Note that a manufacturing method in which the steps (iii) to (iv) above are steps (a) to (c) above will be described in the section entitled <First embodiment>.

[0030] (d) a step of exposing the entire area in which the resist pattern obtained in the step (ii) is formed; (e) a step of stacking an EL layer on the upper side of the electrode in a state in which the resist pattern obtained in the step (d) is exposed, using the resist pattern as a mask; (f) a step of peeling off the unnecessary resist layer on which the EL layer is stacked from the light-emitting display device by bringing the EL layer into contact with (adhering to) a mechanical peeling means. Note that a manufacturing method in which the steps (iii) to (iv) are the steps (d) to (f) will be described in the section <Second embodiment> below.

[0031] A method for manufacturing a laminate constituting a light-emitting display device will be described below with reference to FIGS. 2A to 2I. As shown in FIG. 2A, an electrode 2 (e.g., an anode electrode) is formed on a substrate 1. For example, a plurality of electrodes 2 are formed on the substrate 1, aligned in a first direction and a second direction. As shown in FIG. 2B, a bank layer 11 is formed on the substrate on which the electrodes are formed. Then, as shown in FIG. 2C, the bank layer 11 is molded to form a lattice-shaped bank 12. The bank 12 is preferably formed in an isosceles trapezoid shape on the substrate 1, surrounding each electrode and separating two electrodes 2 aligned in the first direction, as shown in FIG. 2C. The bank 12 is formed to protrude beyond the electrode 2 in a third direction perpendicular to the first and second directions. The bank layer 11 is a layer made of a polymer material, such as polyimide or acrylic. That is, the bank 12 formed by molding the bank layer 11 is also made of such a polymer material.

[0032] Next, as shown in FIG. 2D , a resist layer 13 is formed on the upper side of the bank 12 formed in FIG. 2C . The resist layer 13 shown in FIG. 2D is obtained by applying a resist coating solution and pre-baking (heating) the resulting coating film. The resist layer is formed, for example, using a positive photosensitive resin composition containing a positive photosensitive component and a solvent. The resist layer 13 may have a single layer or a multilayer structure. A detailed explanation of the photosensitive resin composition (for example, a positive photosensitive resin composition) that is the resist material that forms the resist layer will be given later. In this specification, the photosensitive resin composition may be referred to as a resist coating solution or a resist material, which are synonymous terms.

[0033] 2F shows a state in which the area of ​​the resist layer 13 formed in FIG. 2D where the organic EL layer 15 is to be formed has been removed, forming a resist pattern. In the photolithography development process, when the area where the organic EL layer 15 is to be formed is irradiated with light (also referred to as exposure) using a mask 14 as shown in FIG. 2E, the resist layer 13 is, for example, a positive photoresist layer. Therefore, the exposed photosensitive portion is removed by contacting (immersing) the resist layer in a developer, as shown in FIG. 2F. The cut shape of the resist layer after the resist layer is dissolved using a developer (i.e., after the photosensitive portion is removed) is preferably an inverse tapered shape as shown in FIG. 2F. The inverse tapered shape is the reverse of a tapered shape that gradually becomes thinner with increasing distance from the substrate 1, i.e., a tapered shape that gradually becomes thicker with increasing distance from the substrate 1.

[0034] Next, as shown in FIG. 2G, an organic EL layer 15 is laminated on top of an electrode having a laminate with a resist pattern formed thereon as shown in FIG. 2F, using the resist pattern as a mask. In other words, as shown in FIG. 2G, an organic EL layer 15 is laminated on top of an electrode having a laminate with a resist layer 13 formed thereon as shown in FIG. 2D and the resist layer 13 removed from the area where the organic EL layer 15 is to be formed as shown in FIG. 2F. Here, the organic EL layer 15 includes the hole injection layer 3, hole transport layer 4, light-emitting layer 5, electron transport layer 6, and electron injection layer 7 described in the "Specific Structure of a Light-Emitting Display Device (Organic EL Device)" section above, but it is possible to reduce the number of layers. In addition to the above, layers known to form an organic EL device may also be included. Examples of lamination methods include vapor deposition. When laminating the organic EL layer, the patterned resist layer 13 (resist pattern) functions as a mask. For example, Fig. 2G shows a state in which an organic EL vapor deposition film is formed in the area where the resist layer 13 has been removed in Fig. 2F. Note that, as shown in Fig. 2G, the organic EL layer 15 is also laminated on the upper side of the resist layer 13 that has not been removed.

[0035] Next, as shown in Fig. 2H, after laminating organic EL layer 15, the unnecessary resist layer with the EL layer laminated on top thereof is peeled off from the light-emitting display device using a mechanical peeling means, and as shown in Fig. 2I, resist layer 13 that was not removed in Fig. 2F is removed together with organic EL layer 15 laminated on top thereof. This makes it possible to obtain a laminate in which organic EL layer 15 is arranged at a desired position on electrode 2 and from which the resist layer has been removed, as shown in Fig. 2I.

[0036] Here, the term "mechanical peeling means" refers to a means for peeling the resist layer from the light-emitting display device by applying an external force. Preferred examples of mechanical peeling means include means using an adhesive or adhesive film. This differs from chemical peeling means, which use a stripping solution to contact (immerse) the resist layer in the stripping solution and dissolve the resist layer to peel it from the light-emitting display device. By using a mechanical peeling means to peel the resist layer from the light-emitting display device, the present invention can prevent processing problems, such as pipe clogging caused by insoluble matter removed when using a stripping solution. Furthermore, by not using a resist stripping solution, damage to the organic EL layer due to penetration of the resist stripping solution can be suppressed.

[0037] <<Mechanical Peeling Means>> In the present invention, the type of mechanical peeling means is not particularly limited, and can be appropriately selected depending on the purpose, as long as it can peel off the "unnecessary resist layer and the EL layer laminated on the unnecessary resist layer" from the light-emitting display device by applying force. For example, an example of a mechanical peeling means is a means having an adhesive. The adhesive is applied to the peeling target, which is the "unnecessary resist layer and the EL layer laminated on the unnecessary resist layer," and the adhesive attached to the peeling target is peeled off from the light-emitting display device, thereby peeling (separating) the peeling target from the light-emitting display device. The shape of the adhesive-containing means is also not particularly limited, and may be, for example, a film shape. A preferred embodiment of the adhesive-containing means is an adhesive film. The adhesive film may be a film having adhesive properties, and may be a layer made of an adhesive, a film made of the adhesive itself, or a substrate film to which an adhesive has been applied (e.g., coated). In the present invention, it is more preferable that the pressure-sensitive adhesive film is in the form of a roll, since this can be used in the manufacturing apparatus for the light-emitting display device of the present invention described below. The manufacturing apparatus for the light-emitting display device will be described in detail later.

[0038] <<<Adhesive Film>>> A preferred embodiment of the adhesive film according to the present invention is, for example, a film in which a substrate film is subjected to adhesive processing, i.e., a pressure-sensitive adhesive is applied. The adhesive used in the adhesive film is not particularly limited, and examples thereof include silicone-based, acrylic-based, urethane-based, and rubber-based pressure-sensitive adhesives. The thickness of the pressure-sensitive adhesive layer is preferably, for example, 1 μm or more. The substrate film used in the adhesive film is not particularly limited, and examples thereof include polyester, polyvinyl chloride, polyethylene, polypropylene, and polyurethane. The thickness of the substrate film is preferably, for example, 15 μm or more from the viewpoint of handleability.

[0039] Returning to the description of FIG. 2 , FIG. 2H uses an adhesive film 16 as the mechanical peeling means. FIG. 2H shows the adhesive film 16 adhered to the organic EL layer 15. In FIG. 2H , the organic EL layer 15 formed on the unnecessary resist layer is specifically designated as 15a, and the organic EL layer formed in the area where the resist layer 13 has been removed is specifically designated as 15b. In FIG. 2H , the object to be peeled from the light-emitting display device using the mechanical peeling means is the resist layer 13 and the EL layer 15a laminated on the resist layer 13. Therefore, as shown in FIG. 2H , an adhesive film is adhered to the object to be peeled from the light-emitting display device. As shown in FIGS. 2H to 2I , to peel the unnecessary resist layer from the light-emitting display device using the mechanical peeling means (more specifically, the mechanical peeling means is a means having an adhesive film), the adhesion strength of each layer in the laminate constituting the light-emitting display device should preferably satisfy the following relationship:

[0040] <<Adhesion Strength of Each Layer of the Laminate>> The adhesion strength between the resist layer 13 formed in the manufacture of a light-emitting display device and the substrate 1 of the light-emitting display device is preferably adjusted to a size that prevents the resist layer 13 from peeling off from the substrate 1 during the process of patterning the resist layer 13 and the process of laminating the organic EL layer 15, and to a size that allows the resist layer 13 to peel off from the substrate 1 during the process of peeling off the resist layer 13 from the light-emitting display device using a mechanical peeling means. The materials and formation conditions of each layer can be appropriately selected to adjust the adhesion strength relationship described above. Note that while the adhesion strength between the resist layer 13 and the substrate 1 has been described above, if an electrode 2 is formed on the substrate 1 and the resist layer 13 is formed on the electrode 2, the substrate 1 should be considered as the substrate 1 including the electrode 2. In other words, for a substrate 1 including the electrode 2 in which the electrode 2 is formed on the substrate 1, the adhesion strength between the resist layer 13 formed on the electrode 2 and the substrate 1 including the electrode 2 is as follows: The adhesion between the resist layer 13 and the substrate 1 including the electrode 2 is adjusted to a size that prevents the resist layer 13 from peeling off from the substrate 1 including the electrode 2 in the process of patterning the resist layer 13 and the process of laminating the organic EL layer 15, and is desirably adjusted to a size that allows the resist layer 13 to peel off from the substrate 1 including the electrode 2 in the process of peeling the resist layer 13 from the light-emitting display device using a mechanical peeling means. In the above, "the resist layer 13 does not peel off from the substrate 1 including the electrode 2" means that the electrode 2 and the substrate 1 are adhered without peeling, and the resist layer 13 is also adhered without peeling off from the electrode 2. Also, in the above, "the resist layer 13 peels off from the substrate 1 including the electrode 2" means that the electrode 2 and the substrate 1 are adhered without peeling off from the substrate 1, and the resist layer 13 is peeled off from the electrode 2.

[0041] Furthermore, with regard to the resist layer 13 formed in the manufacture of the light-emitting display device, the substrate 1 in the light-emitting display device, the organic EL layer 15 in the light-emitting display device, and the adhesive film 16 serving as the mechanical peeling means, it is preferable that the adhesion strength during the peeling process be adjusted to satisfy the following relationship: (1-1)<(1-2)<(1-3) (In the above relationship, (1-1) indicates the adhesion strength between the resist layer 13 formed in the manufacture of the light-emitting display device and the substrate 1 in the light-emitting display device, (1-2) indicates the adhesion strength between the adhesive film 16 and the organic EL layer 15 in the light-emitting display device, and (1-3) indicates the adhesion strength between the resist layer 13 formed in the manufacture of the light-emitting display device and the organic EL layer 15 in the light-emitting display device.) In this way, it is preferable that the adhesion strength relationship be (1-1)<(1-2)<(1-3). The materials used for each layer, the formation conditions, and the like can be appropriately selected to adjust the adhesion strength to satisfy the above relationship. As mentioned above, the description of the adhesion between the resist layer 13 and the substrate 1 in (1-1) above refers to the substrate 1 including the electrode 2 when the electrode 2 is formed on the substrate 1 and the resist layer 13 is formed on the electrode 2. In other words, because the adhesion in (1-2) above is stronger than the adhesion in (1-1) above, the unnecessary resist layer can be peeled off from the light-emitting display device using the adhesive film 16, which is a mechanical peeling means. In this case, because the adhesion in (1-3) above is stronger than the adhesion in (1-2) above, the adhesive film 16 is adhered to the organic EL layer (15a in FIG. 2H) on the unnecessary resist layer, and then the adhesive film 16 is pulled away from the light-emitting display device. Thus, by adhering the adhesive film to the object to be peeled off, the object to be peeled off can be peeled off from the light-emitting display device.

[0042] Furthermore, with regard to the resist layer 13 formed in the manufacture of the light-emitting display device, the substrate 1 in the light-emitting display device, the organic EL layer 15 in the light-emitting display device, and the adhesive film 16 serving as the mechanical peeling means described above, it is preferable that the adhesion strength during the peeling process be adjusted to satisfy the following relationship: (1-1)<(1-2)<(1-4) (wherein: (1-1) represents the adhesion strength between the resist layer 13 formed in the manufacture of the light-emitting display device and the substrate 1 in the light-emitting display device, (1-2) represents the adhesion strength between the adhesive film 16 and the organic EL layer 15 in the light-emitting display device, and (1-4) represents the adhesion strength between the organic EL layer 15 in the light-emitting display device and the substrate 1 in the light-emitting display device.) In this way, it is preferable that the adhesion strength relationship be satisfied: (1-1)<(1-2)<(1-4). The materials used for each layer, the formation conditions, and the like can be appropriately selected to adjust the adhesion strength to satisfy the relationship described above. As mentioned above, the description of the adhesion "between the resist layer 13 and the substrate 1" in (1-1) above refers to the case where an electrode 2 is formed on the substrate 1 and the resist layer 13 is formed on the electrode 2, and therefore the substrate 1 is to be interpreted as the substrate 1 including the electrode 2. In addition, in (1-4) above, not only the case where an organic EL layer is laminated on the substrate 1, but also the case where an electrode 2 is formed on the substrate 1 and the organic EL layer 15 is formed on the electrode 2, in which case the substrate 1 is to be interpreted as the substrate 1 including the electrode 2. In other words, the adhesion in (1-4) above refers to the adhesion between the organic EL layer 15b and the substrate 1 (or the substrate 1 including the electrode 2) formed in the area where the resist layer 13 has been removed in FIG. 2F, as shown in FIG. 2H. The fact that the adhesion force of (1-4) above is stronger than the adhesion force of (1-2) above means that the adhesion force of the organic EL layer 15b formed in the area where the resist layer 13 has been removed to the substrate 1 (or the substrate 1 including the electrode 2) is strong, and even if the adhesive film 16 comes into contact with the organic EL layer 15b, the organic EL layer 15b will not be peeled off from the light-emitting display device.In other words, when the adhesive film is adhered to the laminate of the light-emitting display device, the organic EL layer 15b does not peel off from the light-emitting display device, and only the organic EL layer 15a formed on the resist layer 13 peels off from the light-emitting display device together with the resist layer 13. By adhering the adhesive film to the object to be peeled off in this way, only the object to be peeled off can be peeled off from the light-emitting display device, leaving the organic EL layer 15b intact.

[0043] To peel off the unnecessary resist layer from the light-emitting display device, it is preferable to use a peeling means made of an adhesive film as shown in Figure 2H, and a detailed explanation of a manufacturing apparatus for a light-emitting display device having such an adhesive film will be provided later.

[0044] [Correction based on Rule 91, 12 / 02 / 2025] In addition, in the present invention, to satisfy the above-mentioned adhesion requirement "between the resist layer 13 and the substrate 1," a desired resist layer may be formed by selecting an appropriate resist material, for example, such that the adhesion between the resist layer 13 and the substrate 1 of the light-emitting display device is weakened by exposure. When using a resist layer whose adhesion between the resist layer and the substrate is weakened by exposure, it is preferable to perform an exposure treatment on the entire area where the organic EL layer 15 is laminated, as shown in FIG. 2J, before removing the unnecessary resist layer using the mechanical peeling means shown in FIG. 2H. After the exposure shown in FIG. 2J, performing the peeling process using the mechanical peeling means shown in FIG. 2H allows the unnecessary resist layer with the EL layer laminated on top to be easily peeled from the light-emitting display device. In the present invention, the resist layer may be formed using the resist materials described below.

[0045] <<Resist Material>> The resist layer is formed using a photosensitive resin composition containing a photosensitive component and a solvent. Any resist material can be used without particular limitations as long as it is capable of performing the photolithography patterning process shown in Figures 2A to 2I above. For example, the resist material may be either positive or negative, as long as the release force of the resist layer is adjusted to ensure the adhesion relationship between the layers described above. However, a positive resist material is preferred because it allows for easy adjustment of the release force through exposure. For example, the resist layer is preferably one that undergoes thermal crosslinking upon prebaking to become insoluble in a developer, and one that dissociates the crosslinked structure upon light irradiation to become soluble in the developer. For example, the resist material may be composed of a polymer having an active hydrogen-containing group, a vinyl ether compound, a photoacid generator, and the like. More specifically, the resist material may be one that undergoes a hemiacetal esterification reaction using, for example, an acrylic resin having a carboxyl group in its side chain and a compound having a polyfunctional vinyl ether group. In this case, the reaction mechanism in the resist layer is as follows: (1) Pre-bake stage: A hemiacetal esterification reaction occurs between the active hydrogen-containing group and the polyfunctional vinyl ether group. That is, the solvent components of the resist coating solution are volatilized by pre-baking, and at the same time, the solvent-soluble groups, which are the active hydrogen-containing groups, are blocked, a crosslinked structure is formed, and the resist becomes insoluble in the developer. (2) Light irradiation (exposure) stage: In the light-irradiated area, the photoacid generator decomposes, generating a strong acid. In the light-irradiated area, an acid hydrolysis reaction catalyzed by the generated acid cleaves the hemiacetal ester structure. At the same time as the crosslinked structure is cleaved, the solvent-soluble groups are regenerated, and the exposed area is dissolved by development. If necessary, post-exposure baking (PEB) may be performed to promote the diffusion of the generated acid.

[0046] During the development process, as shown in Figures 2E and 2F, when the resist layer is selectively exposed to light, the exposed photosensitive portions are dissolved in the developer and removed. The solvent contained in the resist coating solution forms an insoluble state in the crosslinked film when a crosslinked structure is formed in the pre-bake stage. Therefore, in the present invention, the solvent contained in the resist coating solution (also referred to as the "solvent contained in the positive-type photosensitive resin composition" or simply as the "solvent") can be the same solvent as the developer. In other words, in the present invention, the solvent contained in the photosensitive resin composition and the developer used for pattern formation can be the same solvent.

[0047] When a light-emitting display device is manufactured using a photolithography patterning process such as that shown in Figures 2A to 2I, the solvent contained in the photosensitive resin composition used in such a process and the developer can be an organic alkaline aqueous solution, an inorganic alkaline aqueous solution, or a non-fluorine-based organic solvent. Since some non-fluorine-based organic solvents cause little damage to organic EL devices, various non-fluorine-based organic solvents can be selected as desired. Examples of non-fluorine-based organic solvents that can be used include alkylene glycol monoalkyl ethers, alkylene glycol monoalkyl ether acetates, ester-based solvents, ketone-based solvents, and alcohol-based solvents.Examples of alkylene glycol monoalkyl ethers include propylene glycol monomethyl ether (PGME), ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monoethyl ether, and propylene glycol monopropyl ether. Examples of alkylene glycol monoalkyl ether acetates include propylene glycol monomethyl ether acetate (PGMEA), methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate. Examples of ester solvents include ethyl ethoxyacetate, ethyl methoxyacetate, methyl 3-methoxypropionate, and 3-methylpropionate. Examples of suitable solvents include ethyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, ethyl lactate, and butyl lactate. Examples of suitable ketone solvents include methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, 3-methyl-2-pentanone, 2-pentanone, 2-heptanone, and γ-butyrolactone. Examples of suitable alcohol solvents include methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, and t-butanol. Examples of suitable alkylene glycols include ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, and tripropylene glycol. These solvents can be used alone or in combination of two or more.In particular, in the present invention, non-aqueous solvents such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, butyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, 3-methyl-2-pentanone, 2-pentanone, 2-heptanone, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate are preferably used. The photolithographic patterning process of the present invention allows the use of a water-free solvent as the developer, thereby enabling production using a solvent that does not affect the light-emitting display device. Furthermore, the photolithographic patterning process of the present invention allows the solvent contained in the photosensitive resin composition and the developer to be composed of the same solvent, thereby simplifying the production method. Furthermore, according to the photolithography patterning step of the present invention, a non-fluorine-based organic solvent can be used as the solvent contained in the photosensitive resin composition and as the developer, thereby providing a production method that addresses environmental issues.

[0048] The method for producing a light-emitting display device of the present invention may further include a step of removing the unnecessary resist layer from the light-emitting display device using a mechanical peeling means, and then washing the light-emitting display device with an organic solvent or an alkaline aqueous solution. The organic solvents listed above as the developer can be used as the organic solvent. Examples of the alkaline aqueous solution include inorganic alkaline aqueous solutions such as sodium hydroxide, potassium hydroxide, calcium carbonate, sodium silicate, and sodium metasilicate, as well as organic alkaline aqueous solutions such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, triethanolamine, and dimethylethanolamine. This allows complete removal of the unnecessary resist layer from the light-emitting display device, even if a small amount of the resist layer remains after being removed by the mechanical peeling means.

[0049] [Correction under Rule 91 12.02.2025] <Second Embodiment> In the first embodiment, the laminate shown in FIG. 2F is subjected to the deposition process of the organic EL layer shown in FIG. 2G and the full-surface exposure process shown in FIG. 2J to obtain the laminate shown in FIG. 2I through the peeling process using the mechanical peeling means shown in FIG. 2H. However, the order of the deposition and full-surface exposure processes of the organic EL layer may be reversed. That is, the laminate shown in FIG. 2F may be subjected to full-surface exposure as shown in FIG. 2K, and then the organic EL layer may be deposited on the exposed laminate as shown in FIG. 2L. When the laminate shown in FIG. 2L is subjected to the peeling process using the mechanical peeling means shown in FIG. 2H, the unnecessary resist layer 13 with the organic EL layer 15a laminated on top is removed. This results in a laminate with the organic EL layer 15 (corresponding to 15b in FIG. 2H) arranged at the desired position on the electrode 2, with the resist layer removed, as shown in FIG. 2I.

[0050] <Third Embodiment> When the light-emitting display device is a color display device, a color light-emitting display device can be manufactured by repeating the steps shown in Figures 2D to 2I above. For example, in the laminate shown in Figure 4T constituting the light-emitting display device, if a layer corresponding to red (R) (organic EL layer 15), a layer corresponding to green (G) (organic EL layer 25), and a layer corresponding to blue (B) (organic EL layer 35) are to be formed, the result will be as follows. Note that Figure 4 illustrates the formation of organic EL layers corresponding to each color in the order of red (R), green (G), and blue (B), but the order in which these colors are formed is not limited. For example, the order can be red (R), blue (B), and green (G), or blue (B), green (G), and red (R), or any other order can be selected.

[0051] Another preferred embodiment of the method for manufacturing a light-emitting display device of the present invention will be described below with reference to Figures 4A to 4T. As shown in Figure 4A, a laminate is prepared in which isosceles trapezoidal banks 12 are formed on a substrate 1 and an electrode 2. The laminate shown in Figure 4A can be obtained as shown in Figures 2A to 2C above.

[0052] Next, as shown in FIG. 4B , a metal layer 41 is provided as a power supply line on the bank 12 of FIG. 4A . Then, as shown in FIG. 4C , a resist layer is formed on the upper side of the laminate including the metal layer 41 formed in FIG. 4B . The resist layer may be a single layer or a multilayer. The light-emitting display device in the state of FIG. 4C is irradiated (exposed) to light using a mask, as shown in FIG. 4D , in the area where the red (R) organic EL layer is to be formed. As shown in FIG. 4D , the exposed photosensitive portion is removed by contacting (immersing) the resist layer in a developer. As shown in FIG. 4E , the exposed photosensitive portion is removed by contacting (immersing) the resist layer in a developer. As a result, a laminate can be obtained, as shown in FIG. 4E , in which the area where the red (R) organic EL layer is to be formed is removed from the resist layer formed in FIG. 4C .

[0053] Next, as shown in FIG. 4F , an organic EL layer 20 is laminated on the upper side of an electrode having a laminate in the state in which the resist pattern is formed as shown in FIG. 4E , using the resist pattern as a mask. In other words, as shown in FIG. 4F , an organic EL layer 20 is laminated on the upper side of an electrode having a laminate in the state in which the resist layer is formed as shown in FIG. 4C and the resist layer is removed from the area where the organic EL layer is to be formed as shown in FIG. 4E . Examples of a lamination method include vapor deposition. When laminating the organic EL layer 20, the patterned resist layer (resist pattern) functions as a mask. For example, FIG. 4F shows the organic EL layer 20 formed in the area in FIG. 4E from which the resist layer was removed. As shown in FIG. 4F , the organic EL layer 20 is also laminated on the upper side of the resist layer 13 that has not been removed.

[0054] Next, an upper electrode 8 (e.g., a metal electrode (corresponding to a cathode electrode)) is formed on the organic EL layer 20. In FIG. 4F , the upper electrode 8 is laminated on the organic EL layer 20. The upper electrode 8 is formed, for example, by vapor deposition. As shown in FIG. 4F , the upper electrode 8 is formed so as to cover the organic EL layer 20 formed between the banks 12 and is bonded to the metal layer 41. Note that FIG. 2 is a schematic diagram illustrating how the EL layer formed on the resist layer is peeled off using a mechanical peeling means, and therefore the organic EL layer 15 in FIG. 2 is represented as a single layer, collectively representing the layers constituting the organic EL device (including the upper electrode 8). On the other hand, FIG. 4 is also a schematic diagram illustrating how the upper electrode 8 is connected to the metal layer 41. Therefore, the upper electrode is removed from the organic EL layer in FIG. 4 , and the organic EL layer and the upper electrode are represented separately in FIG. 4 . That is, FIG. 4F shows an organic EL layer 20 that combines the layers constituting the organic EL device other than the upper electrode 8, and the upper electrode 8 stacked on top of the organic EL layer 20.

[0055] Next, as shown in Fig. 4G, after laminating the organic EL layer 20 and the upper electrode 8, the unnecessary resist layer on which the EL layer and upper electrode are laminated is peeled off from the light-emitting display device using adhesive film 16, which is a mechanical peeling means, and as shown in Fig. 4H, the resist layer 13 that was not removed in Fig. 4E is removed together with the organic EL layer 20 and upper electrode 8 laminated on the upper side (hereinafter, the "organic EL layer and upper electrode" will also be collectively referred to as "organic EL layer, etc."). This makes it possible to obtain a laminate in which an organic EL layer corresponding to red (R) is arranged at a desired position on electrode 2 and from which the resist layer has been removed, as shown in Fig. 4H.

[0056] Next, as shown in Fig. 4I, a resist layer 23 is formed on the bank 12 formed in Fig. 4H, the organic EL layer 20, and the upper electrode 8 (organic EL layer 20, etc.) The resist layer 23 shown in Fig. 4I is obtained by applying a photosensitive resin composition (for example, a positive photosensitive resin composition) that is a resist coating solution, and then pre-baking (heating) the resulting coating film.

[0057] In the photolithography development step, as shown in Fig. 4J, a mask 24 is used to irradiate (expose) the area where the green (G) organic EL layer is to be formed. Since the resist layer 23 is, for example, a positive photoresist layer, the exposed photosensitive portion is removed by contacting (immersing) the resist layer 23 in a developer, as shown in Fig. 4K. This results in a laminate in which the area where the green (G) organic EL layer is to be formed is removed from the resist layer 23 formed in Fig. 4I, as shown in Fig. 4K.

[0058] Next, as shown in Fig. 4L, an organic EL layer 25 corresponding to green (G) is laminated on the upper side of the electrode having the laminate in the state in which the resist pattern has been formed in Fig. 4K, using the resist pattern as a mask. In other words, as shown in Fig. 4L, the organic EL layer 25 is laminated on the upper side of the electrode having the laminate in the state in which the resist layer 23 has been formed as shown in Fig. 4I and the resist layer 23 has been removed from the area where the organic EL layer 25 corresponding to green (G) is to be formed as shown in Fig. 4K. Note that, as shown in Fig. 4L, the organic EL layer 25 is also laminated on the upper side of the resist layer 23 that has not been removed.

[0059] Next, the upper electrode 8 is formed on the upper side of the organic EL layer 25. In FIG.

[0060] Next, as shown in Fig. 4M, after laminating the organic EL layer 25 and the upper electrode 8, the unnecessary resist layer on which the EL layer and upper electrode are laminated is peeled off from the light-emitting display device using adhesive film 16, which is a mechanical peeling means, and as shown in Fig. 4N, the resist layer 23 that was not removed in Fig. 4K is removed together with the organic EL layer 25 and upper electrode 8 (organic EL layer 25, etc.) laminated on the upper side. This makes it possible to obtain a laminate in which the organic EL layer 20 corresponding to red (R) and the organic EL layer 25 corresponding to green (G) are arranged at desired positions on the electrode 2, and from which the resist layer has been removed, as shown in Fig. 4N.

[0061] Next, as shown in Fig. 4O, a resist layer 33 is formed on the bank 12, the organic EL layer 20, etc., and the organic EL layer 25, etc., formed in Fig. 4N. The resist layer 33 shown in Fig. 4O is obtained by applying a photosensitive resin composition (for example, a positive photosensitive resin composition) that is a resist coating solution, and then pre-baking (heating) the resulting coating film.

[0062] In the photolithography development step, as shown in FIG. 4P, a mask 34 is used to irradiate (expose) the area where the blue (B) organic EL layer is to be formed. Since the resist layer 33 is, for example, a positive photoresist layer, the exposed photosensitive portion is removed by contacting (immersing) the resist layer 33 in a developer, as shown in FIG. 4Q. This results in a laminate in which the area where the blue (B) organic EL layer is to be formed is removed from the resist layer 33 formed in FIG. 4O, as shown in FIG. 4Q.

[0063] Next, as shown in Fig. 4R, an organic EL layer 35 corresponding to blue (B) is laminated on the upper side of the electrode having the laminate in the state in which the resist pattern has been formed as shown in Fig. 4Q, using the resist pattern as a mask. In other words, as shown in Fig. 4R, the organic EL layer 35 is laminated on the upper side of the electrode having the laminate in the state in which the resist layer 33 has been formed as shown in Fig. 4O and the resist layer 33 has been removed from the area where the organic EL layer 35 corresponding to blue (B) is to be formed as shown in Fig. 4Q. Note that, as shown in Fig. 4R, the organic EL layer 35 is also laminated on the upper side of the resist layer 33 that has not been removed.

[0064] Next, the upper electrode 8 is formed on the upper side of the organic EL layer 35. In FIG.

[0065] Next, as shown in Fig. 4S, after laminating the organic EL layer 35 and the upper electrode 8, the unnecessary resist layer on which the EL layer and upper electrode are laminated is peeled off from the light-emitting display device using adhesive film 16, which is a mechanical peeling means, and as shown in Fig. 4T, the resist layer 33 that was not removed in Fig. 4Q is removed together with the organic EL layer 35 and upper electrode 8 (organic EL layer 35, etc.) laminated on the upper side. This makes it possible to obtain a laminate in which the organic EL layer 20 corresponding to red (R), the organic EL layer 25 corresponding to green (G), and the organic EL layer 35 corresponding to blue (B) are arranged at desired positions on the electrode 2, and from which the resist layer has been removed, as shown in Fig. 4T.

[0066] <Reference Example> When an attempt is made to manufacture a light-emitting display device using photolithography patterning, if the manufacturing method of the present invention is not used, it is conceivable to manufacture it using the method described in JP-A-2017-510951, for example.

[0067] However, the manufacturing method described in JP-A-2017-510951 requires complicated setting of conditions for removing unnecessary layers by dry etching or wet processes, and the process is also complicated, so it cannot be said to be a method that offers advantages in terms of cost and work.In contrast, the manufacturing method of the present invention does not use a stripping solution, and can simply strip unnecessary resist layers from a light-emitting display device, the process is not complicated, and a non-fluorine-based solvent can be used as a developer, so it can be said to be a method that offers many advantages in terms of work and the environment.

[0068] (Apparatus for manufacturing a light-emitting display device) The present invention provides an apparatus for manufacturing a light-emitting display device that can be suitably used in the method for manufacturing a light-emitting display device. The apparatus for manufacturing a light-emitting display device of the present invention is "an apparatus for manufacturing a light-emitting display device that is used when manufacturing a light-emitting display device using photolithography patterning, the apparatus having an adhesive film, and comprising: means for adhering the adhesive film to a light-emitting display device after an EL layer has been laminated thereon; and means for peeling off an unnecessary resist layer with an EL layer laminated on top of it from the light-emitting display device by pulling away the adhesive film that has been adhered to the light-emitting display device from the light-emitting display device."

[0069] <Specific Structure of the Light-Emitting Display Device Manufacturing Apparatus> A schematic cross-sectional view of an example of a light-emitting display device manufacturing apparatus is shown in FIG. 3. This light-emitting display device manufacturing apparatus is used, for example, in a process of peeling off an unnecessary resist layer using the adhesive film 16 shown in FIG. 2H and other figures. The apparatus shown in FIG. 3 has a structure in which an unwinding / winding device (R to R: roll to roll) and a light-emitting display device conveying device are integrated. As such, the adhesive film is preferably a roll-shaped film. In FIG. 3, adhesive film 53 (corresponding to 16 in FIG. 2H and other figures) is attached to unwinding roll 52 and winding roll 51 and moves in the same direction as the light-emitting display device conveyance direction. After the EL layer is laminated, the light-emitting display device is placed on a conveying substrate 50 and moved so as to be inserted 54 into a contact area 55 with the adhesive film 53 and removed 56 from the contact area 55 with the adhesive film 53. In the contact region 55 where the light-emitting display device and the adhesive film 53 come into contact, an operation of adhering the adhesive film 53 to the light-emitting display device after the EL layer is laminated thereon and an operation of peeling the adhesive film 53 from the light-emitting display device are performed. For example, the adhesive film 53 is brought into contact with the light-emitting display device using the unwinding roll 52 and the roll 57a (if necessary, roll 57b may also be used in addition to roll 57a). Then, the adhesive film 53 is peeled from the light-emitting display device using the take-up roll 51 and the roll 58a (if necessary, roll 58b may also be used in addition to roll 58a). By peeling the adhesive film 53 from the light-emitting display device while the object to be peeled is adhered to the adhesive film, the object to be peeled, which is an unnecessary resist layer with an EL layer laminated on top, is peeled from the light-emitting display device.

[0070] The present application also includes the following inventions. [1] A method for manufacturing a light-emitting display device, which uses photolithographic patterning to manufacture a light-emitting display device, comprising: laminating an EL layer using a resist layer having a resist pattern formed thereon as a mask; and, after lamination, peeling an unnecessary resist layer together with an EL layer laminated on top of the unnecessary resist layer from the light-emitting display device using a mechanical peeling means. [2] The method for manufacturing a light-emitting display device according to [1], wherein the mechanical peeling means is a means having an adhesive. [3] The method for manufacturing a light-emitting display device according to [2], wherein the means having an adhesive is a means having an adhesive film. [4] The method for manufacturing a light-emitting display device according to [3], wherein the adhesive film is a roll-shaped film. [5] The method for manufacturing a light-emitting display device according to [3] to [4], wherein the adhesive film is adhered to a peeling object, which is an unnecessary resist layer having an EL layer laminated on top of it, thereby peeling the peeling object from the light-emitting display device. [6] The method for manufacturing a light-emitting display device according to any one of [1] to [5], wherein the adhesion between a resist layer formed in manufacturing the light-emitting display device and a substrate in the light-emitting display device is adjusted to a size that prevents peeling of the resist layer from the substrate in the steps of patterning the resist layer and laminating an EL layer, and to a size that allows peeling of the resist layer from the substrate in the step of peeling the resist layer from the light-emitting display device using the mechanical peeling means. [7] The method for manufacturing a light-emitting display device according to any one of [5] to [6], wherein the adhesion between the resist layer formed in manufacturing the light-emitting display device, the substrate in the light-emitting display device, the EL layer in the light-emitting display device, and the adhesive film in the peeling step is adjusted to satisfy the following relationship:(1-1)<(1-2)<(1-3) (wherein, (1-1): the adhesion strength between the resist layer formed in the manufacture of the light-emitting display device and the substrate in the light-emitting display device, (1-2): the adhesion strength between the adhesive film and the EL layer in the light-emitting display device, (1-3): the adhesion strength between the resist layer formed in the manufacture of the light-emitting display device and the EL layer in the light-emitting display device) [8] The method for manufacturing a light-emitting display device according to any one of [5] to [7], wherein the adhesion strengths during the peeling step among the resist layer formed in the manufacture of the light-emitting display device, the substrate in the light-emitting display device, the EL layer in the light-emitting display device, and the adhesive film are adjusted to satisfy the following relationship: (1-1)<(1-2)<(1-4) (wherein (1-1) represents the adhesion between the resist layer formed in the manufacture of the light-emitting display device and the substrate of the light-emitting display device, (1-2) represents the adhesion between the pressure-sensitive adhesive film and the EL layer of the light-emitting display device, and (1-4) represents the adhesion between the EL layer of the light-emitting display device and the substrate of the light-emitting display device.) [9] The method for manufacturing a light-emitting display device according to any one of [1] to [8], comprising a step of exposing the entire area of ​​an area where a resist pattern is formed before peeling the unnecessary resist layer from the light-emitting display device using the mechanical peeling means.

[10] The method for manufacturing a light-emitting display device according to [9], wherein the resist layer used for forming the resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent.

[11] The method for manufacturing a light-emitting display device according to

[10] , wherein the adhesion between the resist layer formed in the manufacture of the light-emitting display device and the substrate of the light-emitting display device is weakened by exposing the resist layer.

[12] A method for manufacturing a light-emitting display device according to any one of [1] to

[11] , comprising the steps of: peeling the unnecessary resist layer from the light-emitting display device using the mechanical peeling means, and then cleaning the light-emitting display device with an organic solvent.

[13] A method for manufacturing a light-emitting display device according to any one of [1] to

[11] , comprising the steps of peeling the unnecessary resist layer from the light-emitting display device using the mechanical peeling means, and then cleaning the light-emitting display device with an alkaline aqueous solution.

[14] The method for manufacturing a light-emitting display device according to any one of [1] to

[13] , wherein the light-emitting display device is an organic EL device or a quantum dot EL device.

[15] An apparatus for manufacturing a light-emitting display device used when manufacturing a light-emitting display device using photolithography patterning, the apparatus having an adhesive film, and comprising: means for adhering the adhesive film to a light-emitting display device after an EL layer has been laminated thereon; and means for peeling off an unnecessary resist layer with an EL layer laminated on top of the light-emitting display device by pulling away the adhesive film adhered to the light-emitting display device from the light-emitting display device.

[16] The apparatus for manufacturing a light-emitting display device according to

[15] , wherein the adhesive film is a roll-shaped film.

[0071] REFERENCE SIGNS LIST 1 substrate 2 electrode 3 hole injection layer 4 hole transport layer 5 light-emitting layer 6 electron transport layer 7 electron injection layer 8 upper electrode 9 organic EL layer 10 organic EL device 11 bank layer 12 bank 13 resist layer 14 mask 15 organic EL layer 15a organic EL layer formed on unnecessary resist layer 15b organic EL layer formed in area where resist layer 13 was removed 16 adhesive film 20 organic EL layer 23 resist layer 24 mask 25 organic EL layer 33 resist layer 34 mask 35 organic EL layer 41 metal layer 50 transport substrate 51 take-up roll 52 unwinding roll 53 adhesive film 54 insertion 55 contact area 56 removal 57a roll 57b roll 58a roll 58b roll

Claims

1. A method for manufacturing a light-emitting display device using photolithographic patterning, comprising the steps of: laminating an EL layer using a resist layer on which a resist pattern has been formed as a mask; after lamination, peeling an unnecessary resist layer together with an EL layer laminated on top of the unnecessary resist layer from the light-emitting display device using a mechanical peeling means; and adjusting the adhesion between the resist layer formed in the manufacture of the light-emitting display device and a substrate in the light-emitting display device to a size that will not cause the resist layer to peel off from the substrate in the step of patterning the resist layer and the step of laminating the EL layer, and adjusting the adhesion between the resist layer formed in the manufacture of the light-emitting display device and a substrate in the light-emitting display device to a size that will not cause the resist layer to peel off from the substrate in the step of peeling the resist layer from the light-emitting display device using the mechanical peeling means.

2. The method for producing a light-emitting display device according to claim 1, wherein the mechanical peeling means is a means having an adhesive.

3. The method for producing a light-emitting display device according to claim 2, wherein the means having an adhesive is a means having an adhesive film.

4. The method for producing a light-emitting display device according to claim 3, wherein the adhesive film is a roll-shaped film.

5. A method for manufacturing a light-emitting display device as described in claim 3, wherein the peeling object is an unnecessary resist layer having an EL layer laminated on the upper side, and the peeling object is peeled off from the light-emitting display device by adhering the adhesive film to the peeling object.

6. The method for producing a light-emitting display device according to claim 5, wherein the adhesion strengths during the peeling step among the resist layer formed in the production of the light-emitting display device, the substrate in the light-emitting display device, the EL layer in the light-emitting display device, and the adhesive film are adjusted to satisfy the following relationship: (1-1)<(1-2)<(1-3) (In the above relationship, (1-1): adhesion strength between the resist layer formed in the production of the light-emitting display device and the substrate in the light-emitting display device, (1-2): adhesion strength between the adhesive film and the EL layer in the light-emitting display device, (1-3): adhesion strength between the resist layer formed in the production of the light-emitting display device and the EL layer in the light-emitting display device.) 7. The method for producing a light-emitting display device according to claim 5, wherein the adhesion strengths of the resist layer formed in the production of the light-emitting display device, the substrate in the light-emitting display device, the EL layer in the light-emitting display device, and the adhesive film during the peeling step are adjusted to satisfy the following relationship: (1-1)<(1-2)<(1-4) (In the above relationship, (1-1) indicates the adhesion strength between the resist layer formed in the production of the light-emitting display device and the substrate in the light-emitting display device, (1-2) indicates the adhesion strength between the adhesive film and the EL layer in the light-emitting display device, and (1-4) indicates the adhesion strength between the EL layer in the light-emitting display device and the substrate in the light-emitting display device.) 8. A method for manufacturing a light-emitting display device as described in claim 1, further comprising a step of exposing the entire area in which the resist pattern is formed before using the mechanical peeling means to peel off the unnecessary resist layer from the light-emitting display device.

9. The method for producing a light-emitting display device according to claim 8, wherein the resist layer used in forming the resist pattern is formed using a positive-type photosensitive resin composition containing a positive-type photosensitive component and a solvent.

10. The method for producing a light-emitting display device according to claim 9, wherein the adhesive strength between the resist layer formed in the production of the light-emitting display device and the substrate of the light-emitting display device is weakened by exposing the resist layer to light.

11. The method for producing a light-emitting display device according to claim 1, further comprising the step of: peeling off the unnecessary resist layer from the light-emitting display device using the mechanical peeling means, and then cleaning the light-emitting display device with an organic solvent.

12. A method for producing a light-emitting display device according to claim 1, further comprising the step of washing said light-emitting display device with an alkaline aqueous solution after removing said unnecessary resist layer from said light-emitting display device using said mechanical removing means.

13. The method for producing a light-emitting display device according to any one of claims 1 to 12, wherein the light-emitting display device is an organic EL device or a quantum dot EL device.

14. A manufacturing apparatus for a light-emitting display device used when manufacturing a light-emitting display device using photolithographic patterning, the manufacturing apparatus comprising: an adhesive film; means for adhering the adhesive film to a light-emitting display device after an EL layer has been laminated thereon; and means for peeling off an unnecessary resist layer with an EL layer laminated on top from the light-emitting display device by pulling away the adhesive film adhered to the light-emitting display device from the light-emitting display device.

15. The apparatus for manufacturing a light-emitting display device according to claim 14, wherein the adhesive film is a roll-shaped film.