Stacked structure including 2-dimensional material and method for fabricating the stacked structure

Abstract

One embodiment provides a laminated structure comprising a two-dimensional material, the laminated structure comprising a first material layer, a two-dimensional material layer provided on the first material layer and including a plurality of holes that expose a portion of the first material layer, and a second material layer provided on the two-dimensional material layer and coupled to the first material layer through the plurality of holes.

Description

Technology Field

[0001] The present disclosure relates to a laminated structure comprising a two-dimensional material and a method for manufacturing a laminated structure, and more specifically, to a laminated structure with improved stability by controlling the coverage of a two-dimensional material layer and a method for manufacturing a laminated structure. Background Technology

[0002] In the field of semiconductor device technology, active research is being conducted on various two-dimensional materials, including graphene, to address the problem of increased resistance resulting from the reduction in metal wiring width and to meet the need for the development of new metal barrier materials. For the application of two-dimensional materials to semiconductor devices, it is process-efficient to grow the materials directly on the semiconductor substrate.

[0003] When two-dimensional materials are grown directly on a semiconductor substrate, only weak van der Waals forces act between the semiconductor substrate and the two-dimensional material; consequently, the adhesion between the two-dimensional material is not strong enough to withstand subsequent processes. Accordingly, to improve the stability of semiconductor devices containing two-dimensional materials, it is necessary to increase the adhesion between the semiconductor substrate and the two-dimensional material. The problem to be solved

[0004] According to various embodiments of the present disclosure, the present invention aims to provide a laminated structure comprising a two-dimensional material that improves adhesion between constituent layers by controlling the coverage of the two-dimensional material layer, and a method for manufacturing the laminated structure. means of solving the problem

[0005] One embodiment is,

[0006] A laminated structure comprising a two-dimensional material is provided, the structure comprising: a first material layer; a two-dimensional material layer provided on the first material layer and including a plurality of holes that expose a portion of the first material layer; and a second material layer provided on the two-dimensional material layer and coupled to the first material layer through the plurality of holes.

[0007] The coverage of the two-dimensional material layer on the upper surface of the first material layer may be 0.6 to 0.99.

[0008] The adhesion energy between the first material layer and the second material layer is 1 J / m 2 Up to 30J / m 2 It could be.

[0009] The above two-dimensional material layer may include at least one of graphene, black phosphorus, amorphous boron nitride, two-dimensional hexagonal boron nitride (h-BN), phosphorene, or transition metal dichalcogenide.

[0010] The above transition metal dichalcogenide may include one metal element selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb), and one chalcogen element selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

[0011] The first material layer may include a metallic material.

[0012] The above metal material may include at least one of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge).

[0013] The above second material layer may include a semiconductor material.

[0014] The above semiconductor material may include a material in which at least two elements selected from Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined.

[0015] The second material layer may include an insulating material.

[0016] The insulating material may include at least one of the oxides, nitrides, carbides, and derivatives of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

[0017] The first material layer may include a semiconductor material.

[0018] The second material layer may include either a semiconductor material or an insulating material.

[0019] One embodiment is,

[0020] A method for manufacturing a laminated structure comprising a two-dimensional material is provided, comprising the steps of: forming a two-dimensional material layer having a plurality of holes that expose a portion of the first material layer on a first material layer; and forming a second material layer on the two-dimensional material layer that is arranged to be coupled with the first material layer through the plurality of holes.

[0021] In the step of forming the above two-dimensional material layer, the two-dimensional material layer can be formed such that the coverage of the two-dimensional material layer on the upper surface of the first material layer is 0.6 to 0.99.

[0022] In the step of forming the above two-dimensional material layer, the two-dimensional material layer can be formed using either a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.

[0023] The first material layer may include a metal.

[0024] The above metal material may include at least one of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge).

[0025] The above second material layer may include a semiconductor material.

[0026] The above semiconductor material may include a material in which at least two elements selected from Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined.

[0027] The second material layer may include an insulating material.

[0028] The insulating material may include at least one of the oxides, nitrides, carbides, and derivatives of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd). Effects of the invention

[0029] According to various embodiments of the present disclosure, a laminated structure comprising a two-dimensional material that improves adhesion between constituent layers by controlling the coverage of the two-dimensional material layer, and a method for manufacturing the laminated structure can be provided.

[0030] According to various embodiments of the present disclosure, a laminated structure comprising a two-dimensional material that improves adhesion by connecting a lower layer and an upper layer to each other through a plurality of holes included in a two-dimensional material layer, and a method for manufacturing a laminated structure can be provided. Brief explanation of the drawing

[0031] FIG. 1 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to one embodiment. Figure 2 is a graph to explain the change in adhesion between the first material layer and the second material layer according to the coverage of the two-dimensional material layer containing graphene. Figure 3 is a graph illustrating the barrier properties of a two-dimensional material layer. FIG. 4 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 5 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 6 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 7 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 8 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 9 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 10 briefly illustrates an exemplary configuration of a laminated structure including a two-dimensional material according to another embodiment. FIG. 11 is a flowchart illustrating a method for manufacturing a laminated structure including a two-dimensional material according to one embodiment. Specific details for implementing the invention

[0032] Below, with reference to the attached drawings, a laminated structure comprising a two-dimensional material and a method for manufacturing the laminated structure according to various embodiments are described in detail. The embodiments described are merely illustrative, and various modifications are possible from these embodiments. In the drawings, the same reference numerals refer to the same components, and the size or thickness of each component may be exaggerated for clarity of description.

[0033] In the following, expressions described as "upper" or "upper" may include not only objects located directly above / below / left / right in contact, but also objects located above / below / left / right without contact.

[0034] Terms such as "first," "second," etc., may be used to describe various components, but components should not be limited by these terms. Terms are used solely for the purpose of distinguishing one component from another.

[0035] A singular expression includes a plural expression unless the context clearly indicates otherwise. Furthermore, when a part is said to "include" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0036] The use of the term "above" and similar descriptive terms may apply to both singular and plural forms.

[0037] Unless there is an explicit statement that the steps constituting the method must be performed in the described order, they may be performed in a suitable order. Furthermore, the use of all exemplary terms (e.g., etc.) is merely intended to describe the technical concept in detail and, unless limited by the claims, such terms do not limit the scope of the rights.

[0038] FIG. 1 briefly illustrates an exemplary configuration of a laminated structure (100) including a two-dimensional material according to one embodiment. FIG. 2 is a graph for explaining the change in adhesion force between a first material layer (10) and a second material layer (30) according to the coverage of a two-dimensional material layer (20) including graphene. FIG. 3 is a graph for explaining the barrier characteristics of a two-dimensional material layer (20).

[0039] Referring to FIG. 1, a laminated structure (100) including a two-dimensional material according to one embodiment may include a first material layer (10), a two-dimensional material layer (20) provided on the first material layer (10) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (10), and a second material layer (30) provided on the two-dimensional material layer (20) and coupled with the first material layer (10) through the plurality of holes (h1, h2).

[0040] The first material layer (10) may include a metallic material. For example, the first material layer (10) may include one or more metals or alloys thereof selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge).

[0041] Here, a thermal annealing treatment may be performed on the first material layer (10) containing metal to create crystallinity on the metal surface. For example, the first material layer (10) may have enhanced crystallinity on the metal surface through a thermal annealing process at a high temperature.

[0042] The two-dimensional material layer (20) is laminated on the upper surface of the first material layer (10) and may include a plurality of holes (h1, h2). Although two holes (h1, h2) are shown in FIG. 1, the two-dimensional material layer (20) is not limited thereto and may include two or more infinitely many holes. For example, the ratio of the plurality of holes (h1, h2) to the two-dimensional material layer (20) may be about 1% to 40%. The diameters, shapes, etc., of the plurality of holes (h1, h2) included in the two-dimensional material layer (20) may differ from each other. The plurality of holes (h1, h2) may expose a portion of the upper surface of the first material layer (10).

[0043] Thus, the two-dimensional material layer (20) has a structure including a plurality of holes (h1, h2) that expose a portion of the upper surface of the first material layer (10), and the coverage of the two-dimensional material layer (20) over the upper surface of the first material layer (10) may be about 0.6 to 0.99. Accordingly, the two-dimensional material layer (20) may be formed to cover only a portion of the upper surface of the first material layer (10). In the middle of the lower surface of the two-dimensional material layer (20) facing the upper surface of the first material layer (10), regions that do not cover the upper surface of the first material layer (10) may be formed. For example, the two-dimensional material layer (20) may include graphene.

[0044] The second material layer (30) may include a semiconductor material. For example, the second material layer (30) may include semiconductors such as IV, III-V, II-VI, IV-VI, and semiconductor compounds. The second material layer (30) may include a material in which at least two elements from Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. For example, the second material layer (30) may include at least one of SiC, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, CdSe, CdS, CdTe, ZnO, ZnSe, ZnTe, PbSe, PbS, PbTe, SnS, SnS2, SnTe, AlInSb, GaAsN, GaAsSb, InAsSb, InGaSb, SiGe, SiSn, AlGaInP, AlInAs, InGaN, AlGaN, InGaP, HgZnTe, GaAsP, AlGaP, and InGaAs or a compound thereof.

[0045] The second material layer (30) can be bonded to the first material layer (10) through a plurality of holes (h1, h2) included in the two-dimensional material layer (20). For example, a portion of the first material layer (10) may be exposed by the plurality of holes (h1, h2), and a portion of the lower surface of the second material layer (30) may be formed to fill the plurality of holes (h1, h2) and come into contact with the exposed portion of the first material layer (10). In this way, bonding can be achieved between the portion of the first material layer (10) and the portion of the second material layer (30) that come into contact with each other through the plurality of holes (h1, h2). In this case, the adhesion energy between the first material layer (10) and the second material layer (30) is approximately 1 J / m² 2 Up to 30J / m 2 It may be. Referring to FIG. 2, when the two-dimensional material layer (20) includes graphene, the adhesion energy between the first material layer (10) and the second material layer (30) may vary depending on the coverage of the first material layer (10) of the two-dimensional material layer (20). For example, when the coverage of the first material layer (10) of the two-dimensional material layer (20) including graphene is approximately 0.8, 0.93, 0.96, and 0.995, the adhesion energy between the first material layer (10) and the second material layer (30) is approximately 6 J / m² each. 2 , 4.2J / m 2 , 2.65J / m 2 , 0.4J / m 2 It is possible. In this way, by controlling the coverage of the first material layer (10) of the two-dimensional material layer (20), the adhesion energy between the first material layer (10) and the second material layer (30) can be controlled.

[0046] When only a two-dimensional material layer (20) is formed on the first material layer (10), the adhesion between the first material layer (10) and the two-dimensional material layer (20) may not be sufficiently large to withstand stress during the semiconductor process. However, the first material layer (10) and the second material layer (30), which are provided on the upper and lower portions of the two-dimensional material layer (20), are joined through a plurality of holes (h1, h2) included in the two-dimensional material layer (20), thereby improving the overall adhesion of the stacked structure (100). Accordingly, the two-dimensional material layer (20) can be positioned more stably between the first material layer (10) and the second material layer (30), and the stability of the stacked structure (100) can be improved.

[0047] Meanwhile, referring to FIG. 3, it can be seen that even if the coverage of the first material layer (10) of the two-dimensional material layer (20) is less than 1, the two-dimensional material layer (20) can act as a barrier between the first material layer (10) and the second material layer (30). For example, when the coverage of the first material layer (10) of the material layer (20) containing graphene is 1, the concentration of p-type impurities measured from the second material layer (30) in region A, where the sputtering time for the stacked structure (100) is about 300 seconds prior, is about 10 18 It can be expressed as atoms / cc. Additionally, when the coverage of the first material layer (10) of the material layer (20) containing graphene is 0.95, the concentration of p-type impurities measured from the second material layer (30) in region A, where the sputtering time for the stacked structure (100) is approximately 300 seconds prior, is approximately 5×10 18 It can be represented as atoms / cc, which may be a value that does not exceed the reference value of the barrier function. In this way, even when the two-dimensional material layer (20) has coverage less than 1 for the first material layer (10), the two-dimensional material layer (20) can act as a barrier between the first material layer (10) and the second material layer (30).

[0048] FIG. 4 briefly illustrates an exemplary configuration of a laminated structure (110) comprising a two-dimensional material according to another embodiment. The laminated structure (110) of FIG. 4 may be substantially identical to the laminated structure (100) of FIG. 1, except that the second material layer (31) comprises a material different from the second material layer (30) of FIG. 1. In describing FIG. 4, content that overlaps with FIG. 1 to FIG. 3 is omitted.

[0049] Referring to FIG. 4, a laminated structure (110) including a two-dimensional material according to one embodiment may include a first material layer (10), a two-dimensional material layer (20) provided on the first material layer (10) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (10), and a second material layer (31) provided on the two-dimensional material layer (20) and coupled with the first material layer (10) through the plurality of holes (h1, h2).

[0050] The second material layer (31) may include an insulating material. For example, the second material layer (31) may include at least one oxide, nitride, carbide, and derivative thereof of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

[0051] FIG. 5 briefly illustrates an exemplary configuration of a laminated structure (120) including a two-dimensional material according to another embodiment. The laminated structure (120) of FIG. 5 may be substantially identical to the laminated structure (100) of FIG. 1, except that the first material layer (12) and the second material layer (32) include a material different from the first material layer (10) and the second material layer (30) of FIG. 1. In describing FIG. 5, content that overlaps with FIG. 1 to FIG. 3 is omitted.

[0052] Referring to FIG. 5, a laminated structure (120) including a two-dimensional material according to one embodiment may include a first material layer (12), a two-dimensional material layer (20) provided on the first material layer (12) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (12), and a second material layer (32) provided on the two-dimensional material layer (20) and coupled with the first material layer (12) through the plurality of holes (h1, h2).

[0053] The first material layer (12) may include a semiconductor material. For example, the first material layer (12) may include semiconductors such as IV, III-V, II-VI, IV-VI, and semiconductor compounds. The first material layer (12) may include a material in which at least two elements among Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. For example, the first material layer (12) may include at least one of SiC, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, CdSe, CdS, CdTe, ZnO, ZnSe, ZnTe, PbSe, PbS, PbTe, SnS, SnS2, SnTe, AlInSb, GaAsN, GaAsSb, InAsSb, InGaSb, SiGe, SiSn, AlGaInP, AlInAs, InGaN, AlGaN, InGaP, HgZnTe, GaAsP, AlGaP, and InGaAs or a compound thereof.

[0054] The second material layer (32) may include a metallic material. For example, the second material layer (32) may include one or more metals or alloys selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge).

[0055] FIG. 6 briefly illustrates an exemplary configuration of a laminated structure (130) including a two-dimensional material according to another embodiment. The laminated structure (130) of FIG. 6 may be substantially identical to the laminated structure (100) of FIG. 1, except that the first material layer (13) and the second material layer (33) include a different material than the first material layer (10) and the second material layer (30) of FIG. 1. In describing FIG. 6, content that overlaps with FIG. 1 to FIG. 3 is omitted.

[0056] Referring to FIG. 6, a laminated structure (130) including a two-dimensional material according to one embodiment may include a first material layer (13), a two-dimensional material layer (20) provided on the first material layer (13) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (13), and a second material layer (33) provided on the two-dimensional material layer (20) and coupled with the first material layer (13) through the plurality of holes (h1, h2).

[0057] The first material layer (13) may include a semiconductor material. For example, the first material layer (13) may include semiconductors such as IV, III-V, II-VI, IV-VI, and semiconductor compounds. The first material layer (13) may include a material in which at least two elements among Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. For example, the first material layer (13) may include at least one of SiC, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, CdSe, CdS, CdTe, ZnO, ZnSe, ZnTe, PbSe, PbS, PbTe, SnS, SnS2, SnTe, AlInSb, GaAsN, GaAsSb, InAsSb, InGaSb, SiGe, SiSn, AlGaInP, AlInAs, InGaN, AlGaN, InGaP, HgZnTe, GaAsP, AlGaP, and InGaAs or a compound thereof.

[0058] The second material layer (33) may include an insulating material. For example, the second material layer (33) may include at least one oxide, nitride, carbide, and derivative thereof of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

[0059] FIG. 7 briefly illustrates an exemplary configuration of a laminated structure (140) comprising a two-dimensional material according to another embodiment. The laminated structure (140) of FIG. 7 may be substantially identical to the laminated structure (100) of FIG. 1, except that the two-dimensional material layer (21) comprises a material different from the two-dimensional material layer (20) of FIG. 1. In describing FIG. 7, content that overlaps with FIG. 1 to FIG. 3 is omitted.

[0060] Referring to FIG. 7, a laminated structure (140) including a two-dimensional material according to one embodiment may include a first material layer (10), a two-dimensional material layer (21) provided on the first material layer (10) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (10), and a second material layer (30) provided on the two-dimensional material layer (21) and coupled with the first material layer (10) through the plurality of holes (h1, h2).

[0061] The two-dimensional material layer (21) may include at least one of black phosphorus, amorphous boron nitride, two-dimensional hexagonal boron nitride (h-BN), phosphorene, or transition metal dichalcogenide.

[0062] Here, the transition metal dichalcogenide may include one metal element selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb), and one chalcogen element selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

[0063] For example, the two-dimensional material layer (21) may include at least one of MoS2, WS2, WSe2, MoTe2, WTe2, ZrS2, ZrSe2, NbS2, TaS2, TiS2, NiSe2, GaSe, GaTe, InSe, and Bi2Se3.

[0064] FIG. 8 briefly illustrates an exemplary configuration of a laminated structure (150) comprising a two-dimensional material according to another embodiment. The laminated structure (150) of FIG. 8 may be substantially identical to the laminated structure (140) of FIG. 7, except that the second material layer (31) comprises a material different from the second material layer (30) of FIG. 7. In describing FIG. 8, content overlapping with FIG. 1 through 3 and FIG. 7 is omitted.

[0065] Referring to FIG. 8, a laminated structure (150) including a two-dimensional material according to one embodiment may include a first material layer (10), a two-dimensional material layer (21) provided on the first material layer (10) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (10), and a second material layer (31) provided on the two-dimensional material layer (21) and coupled with the first material layer (10) through the plurality of holes (h1, h2).

[0066] The second material layer (31) may include an insulating material. For example, the second material layer (31) may include at least one oxide, nitride, carbide, and derivative thereof of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

[0067] FIG. 9 briefly illustrates an exemplary configuration of a laminated structure (160) comprising a two-dimensional material according to another embodiment. The laminated structure (160) of FIG. 9 may be substantially identical to the laminated structure (140) of FIG. 7, except that the first material layer (12) and the second material layer (32) comprise a material different from the first material layer (10) and the second material layer (30) of FIG. 7. In describing FIG. 9, content that overlaps with FIG. 1 through 3 and FIG. 7 is omitted.

[0068] Referring to FIG. 9, a laminated structure (160) including a two-dimensional material according to one embodiment may include a first material layer (12), a two-dimensional material layer (21) provided on the first material layer (12) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (12), and a second material layer (32) provided on the two-dimensional material layer (21) and coupled with the first material layer (12) through the plurality of holes (h1, h2).

[0069] The first material layer (12) may include a semiconductor material. For example, the first material layer (12) may include semiconductors such as IV, III-V, II-VI, IV-VI, and semiconductor compounds. The first material layer (12) may include a material in which at least two elements among Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. For example, the first material layer (12) may include at least one of SiC, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, CdSe, CdS, CdTe, ZnO, ZnSe, ZnTe, PbSe, PbS, PbTe, SnS, SnS2, SnTe, AlInSb, GaAsN, GaAsSb, InAsSb, InGaSb, SiGe, SiSn, AlGaInP, AlInAs, InGaN, AlGaN, InGaP, HgZnTe, GaAsP, AlGaP, and InGaAs or a compound thereof.

[0070] The second material layer (32) may include a metallic material. For example, the second material layer (32) may include one or more metals or alloys selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge).

[0071] FIG. 10 briefly illustrates an exemplary configuration of a laminated structure (170) comprising a two-dimensional material according to another embodiment. The laminated structure (170) of FIG. 10 may be substantially identical to the laminated structure (140) of FIG. 7, except that the first material layer (13) and the second material layer (33) comprise a material different from the first material layer (10) and the second material layer (30) of FIG. 7. In describing FIG. 10, content that overlaps with FIG. 1 to 3 and FIG. 7 is omitted.

[0072] Referring to FIG. 10, a laminated structure (170) including a two-dimensional material according to one embodiment may include a first material layer (13), a two-dimensional material layer (21) provided on the first material layer (13) and having a plurality of holes (h1, h2) that expose a portion of the first material layer (13), and a second material layer (33) provided on the two-dimensional material layer (21) and coupled with the first material layer (13) through the plurality of holes (h1, h2).

[0073] The first material layer (13) may include a semiconductor material. For example, the first material layer (13) may include semiconductors such as IV, III-V, II-VI, IV-VI, and semiconductor compounds. The first material layer (13) may include a material in which at least two elements among Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. For example, the first material layer (13) may include at least one of SiC, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, CdSe, CdS, CdTe, ZnO, ZnSe, ZnTe, PbSe, PbS, PbTe, SnS, SnS2, SnTe, AlInSb, GaAsN, GaAsSb, InAsSb, InGaSb, SiGe, SiSn, AlGaInP, AlInAs, InGaN, AlGaN, InGaP, HgZnTe, GaAsP, AlGaP, and InGaAs or a compound thereof.

[0074] The second material layer (33) may include an insulating material. For example, the second material layer (33) may include at least one oxide, nitride, carbide, and derivative thereof of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

[0075] FIG. 11 is a flowchart illustrating a method for manufacturing a laminated structure including a two-dimensional material according to one embodiment.

[0076] Referring to FIG. 11, a method for manufacturing a laminated structure including a two-dimensional material according to one embodiment may include the step (S101) of forming a two-dimensional material layer having a plurality of holes that expose a portion of the first material layer on a first material layer, and the step (S102) of forming a second material layer arranged to be coupled with the first material layer through the plurality of holes on the two-dimensional material layer.

[0077] In the step (S101) of forming a two-dimensional material layer on a first material layer, the two-dimensional material layer can be formed such that the coverage of the two-dimensional material layer over the upper surface of the first material layer is 0.6 to 0.99. For example, the first material layer may include a plurality of holes, and a portion of the upper surface of the first material layer may be exposed through the plurality of holes included in the two-dimensional material layer.

[0078] The method for forming a two-dimensional material layer may use methods conventionally used in the industry for the growth of two-dimensional material layers without special limitations. For example, a two-dimensional material layer can be formed using a Chemical Vapor Deposition (CVD) method. Chemical vapor deposition methods may include, but are not limited to, Rapid Thermal Chemical Vapor Deposition (RTCVD), Inductively Coupled Plasma-Chemical Vapor Deposition (ICP-CVD), Low Pressure Chemical Vapor Deposition (LPCVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD), Metal Organic Chemical Vapor Deposition (MOCVD), and Plasma-Enhanced Chemical Vapor Deposition (PECVD) methods. Additionally, the two-dimensional material layer can be formed through an Atomic Layer Deposition (ALD) method. However, it is not limited to this, and the method of forming a two-dimensional material layer may include various deposition methods other than CVD and ALD.

[0079] In the step (S102) of forming a second material layer on a two-dimensional material layer, a portion of the lower surface of the second material layer fills a plurality of holes included in the two-dimensional material layer, and the second material layer can be formed on the two-dimensional material layer such that the second material layer and the second material layer are joined to each other through the plurality of holes.

[0080] The first material layer may include a metallic material. For example, the first material layer may include one or more metals or alloys thereof selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge).

[0081] The second material layer may include a semiconductor material. For example, the second material layer may include semiconductors such as IV, III-V, II-VI, IV-VI, and semiconductor compounds. The second material layer (30) may include a material in which at least two elements from Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. For example, the second material layer may include at least one of SiC, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, CdSe, CdS, CdTe, ZnO, ZnSe, ZnTe, PbSe, PbS, PbTe, SnS, SnS2, SnTe, AlInSb, GaAsN, GaAsSb, InAsSb, InGaSb, SiGe, SiSn, AlGaInP, AlInAs, InGaN, AlGaN, InGaP, HgZnTe, GaAsP, AlGaP, and InGaAs, or a compound thereof.

[0082] However, it is not limited thereto, and the second material layer may include an insulating material instead of a semiconductor material. For example, the second material layer may include at least one of the oxides, nitrides, carbides, and derivatives of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

[0083] The various embodiments described above are merely exemplary, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true scope of technical protection according to the various exemplary embodiments must be determined by the technical concept of the invention as described in the following claims. Explanation of the symbols

[0084] 10, 12, 13: First layer of matter 20, 21: Two-dimensional material layer 30, 31, 32, 33: Second layer of matter 100, 110, 120, 130, 140, 150, 160, 170: Laminated structure including two-dimensional material h1, h2, h3, h4: hole

Claims

Claim 1 A stacked structure comprising: a first material layer; a two-dimensional material layer in contact with the upper surface of the first material layer and having a plurality of holes that expose a portion of the upper surface of the first material layer; and a second material layer in contact with the two-dimensional material layer and coupled to the first material layer through the plurality of holes; wherein the two-dimensional material layer is provided between the first material layer and the second material layer and comprises at least one of graphene, black phosphorus, amorphous boron nitride, two-dimensional hexagonal boron nitride (h-BN), phosphorene, or transition metal dichalcogenide. Claim 2 A laminated structure comprising a two-dimensional material, wherein, in claim 1, the coverage of the two-dimensional material layer on the upper surface of the first material layer is 0.6 to 0.

99. Claim 3 In claim 1, the adhesion energy between the first material layer and the second material layer is 1 J / m 2 Up to 30J / m 2 A layered structure containing phosphorus, a two-dimensional material. Claim 4 In claim 1, the two-dimensional material layer is a stacked structure comprising a two-dimensional material, wherein the two-dimensional material layer is graphene. Claim 5 A laminated structure comprising a two-dimensional material, wherein the transition metal dichalcogenide comprises one metal element selected from the group consisting of molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hafnium (Hf), technetium (Tc), rhenium (Re), copper (Cu), gallium (Ga), indium (In), tin (Sn), germanium (Ge), and lead (Pb), and one chalcogen element selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te). Claim 6 In claim 1, the first material layer comprises a two-dimensional material, and the laminated structure comprises a metal material. Claim 7 A laminated structure comprising a two-dimensional material, wherein the metal material comprises at least one of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge). Claim 8 In claim 6, the second material layer comprises a semiconductor material, and the stacked structure comprises a two-dimensional material. Claim 9 In claim 8, the semiconductor material comprises a two-dimensional material comprising a material in which at least two elements selected from Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined, forming a stacked structure. Claim 10 In claim 6, the second material layer comprises a two-dimensional material, and the laminated structure comprises an insulating material. Claim 11 In claim 10, the insulating material comprises a two-dimensional material comprising at least one of the oxides, nitrides, carbides, and derivatives of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd). Claim 12 In claim 1, the first material layer comprises a semiconductor material, and the stacked structure comprises a two-dimensional material. Claim 13 In claim 12, the second material layer comprises a two-dimensional material, wherein the second material layer comprises either a metallic material or an insulating material, forming a laminated structure. Claim 14 A method for manufacturing a laminated structure comprising a two-dimensional material, wherein the two-dimensional material layer comprises a plurality of holes that expose a portion of the first material layer on the first material layer; and a second material layer formed on the two-dimensional material layer to be coupled with the first material layer through the plurality of holes. Claim 15 A method for manufacturing a laminated structure comprising a two-dimensional material, wherein, in the step of forming the two-dimensional material layer, the two-dimensional material layer is formed such that the coverage of the two-dimensional material layer on the upper surface of the first material layer is 0.6 to 0.

99. Claim 16 A method for manufacturing a stacked structure comprising a two-dimensional material, wherein, in the step of forming the two-dimensional material layer, the two-dimensional material layer is formed using either a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. Claim 17 A method for manufacturing a laminated structure comprising a two-dimensional material, wherein the first material layer comprises a metallic material, in accordance with claim 15. Claim 18 A method for manufacturing a laminated structure comprising a two-dimensional material, wherein the metal material comprises at least one of copper (Cu), molybdenum (Mo), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), gadolinium (Gd), brass, bronze, stainless steel, and germanium (Ge). Claim 19 A method for manufacturing a stacked structure comprising a two-dimensional material, wherein the second material layer comprises a semiconductor material, in accordance with claim 17. Claim 20 A method for manufacturing a stacked structure according to claim 19, wherein the semiconductor material comprises a two-dimensional material in which at least two elements selected from Si, Ge, C, Zn, Cd, Al, Ga, In, B, C, N, P, S, Se, As, Sb, and Te are combined. Claim 21 A method for manufacturing a laminated structure comprising a two-dimensional material, wherein the second material layer comprises an insulating material, in accordance with claim 17. Claim 22 A method for manufacturing a laminated structure according to claim 21, wherein the insulating material comprises at least one of the oxides, nitrides, carbides, and derivatives thereof of at least one of silicon (Si), nickel (Ni), aluminum (Al), tungsten (W), ruthenium (Ru), cobalt (Co), manganese (Mn), titanium (Ti), tantalum (Ta), gold (Au), hafnium (Hf), zirconium (Zr), zinc (Zn), yttrium (Y), chromium (Cr), copper (Cu), molybdenum (Mo), and gadolinium (Gd).

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