Apparatus and method for treating substrate

Abstract

The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes: a process chamber having a processing space inside; a support unit for supporting a substrate in the processing space; an imaging unit for capturing an edge area of ​​a substrate to acquire image information; and a controller. The support unit includes a lift pin for raising and lowering a substrate; and a lifting member for raising and lowering the lift pin. The controller can calculate the center point of the substrate based on image information when the substrate is placed on the lift pin, and calculate the degree of distortion of the substrate by comparing the center point of the substrate with a preset center point of the substrate.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] Generally, to manufacture semiconductor devices, unit processes such as deposition, coating, development, etching, and cleaning are performed sequentially or repeatedly on a substrate. A substrate processing device that performs these unit processes is equipped with a plate on which the substrate is placed inside a chamber. Multiple lift pins that support the substrate are arranged at regular intervals on the plate. Additionally, to secure the substrate, the plate fixes the substrate using a clamp, vacuum, or electrostatic force.

[0003] Referring to FIG. 1, a general substrate processing device is equipped with an electrostatic chuck (ESC) (1) in which a substrate (W) is placed inside a chamber (not shown). The electrostatic chuck (1) places the substrate (W) on its upper surface, and a plurality of lift pins (2) are arranged at regular intervals to separate and support the substrate (W) from the upper surface. The electrostatic chuck (1) provides a plurality of pin holes (3) for installing the lift pins (2). Each of the pin holes (3) vertically penetrates the electrostatic chuck (1) vertically so that the installed lift pin (2) can move up and down. The lift pin (2) is raised and lowered by a driving member (4).

[0004] If the alignment of the lift pins (2) is misaligned or the position of the robot transporting the substrate (W) is misaligned, the substrate (W) placed on the lift pins (2) becomes misaligned. If the process is performed with the substrate (W) misaligned, the results of the substrate (W) processing are not uniform, or time is required to repair the substrate (W). This has a negative impact on the process yield. The problem to be solved

[0005] One objective of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate.

[0006] In addition, the present invention has one objective of providing a substrate processing apparatus and a substrate processing method capable of determining whether a substrate is placed in the correct position.

[0007] In addition, the present invention has one objective of providing a substrate processing apparatus and a substrate processing method capable of teaching a robot to transport a substrate to a chamber based on the position of the substrate.

[0008] The objectives of the present invention are not limited thereto, and other objectives not mentioned will be clearly understood by a person skilled in the art from the descriptions below. means of solving the problem

[0009] The present invention provides an apparatus for processing a substrate. In one embodiment, the apparatus for processing a substrate includes: a process chamber having a processing space inside; a support unit for supporting a substrate in the processing space; an imaging unit for capturing an edge area of ​​a substrate to acquire image information; and a controller. The support unit includes a lift pin for raising and lowering a substrate; and a lifting member for raising and lowering the lift pin. The controller can calculate the center point of the substrate based on image information when the substrate is placed on the lift pin, and calculate the degree of distortion of the substrate by comparing the center point of the substrate with a preset center point of the substrate.

[0010] In one embodiment, the imaging unit may include a plurality of cameras installed at different locations within the processing space.

[0011] In one embodiment, the center point of the pre-set substrate may be set based on an image obtained by capturing the edge area of ​​the substrate while the substrate brought into the process chamber is placed on the lift pin before processing the substrate.

[0012] In one embodiment, the controller can control the lifting member and the imaging unit to capture an edge area of ​​the substrate while the substrate is placed on the lift pin before the substrate is removed from the process chamber after the processing of the substrate is finished.

[0013] In one embodiment, the controller can compare a first image obtained by capturing an edge area of ​​the substrate while the substrate is placed on the lift pin after being brought into the process chamber, and a second image obtained by capturing an edge area of ​​the substrate while the substrate is placed on the lift pin before the substrate is taken out of the process chamber after processing of the substrate, to determine the degree of misalignment of the substrate and decide whether to feed a subsequent substrate based on the degree of misalignment of the substrate.

[0014] In one embodiment, the controller can control the lifting member and the imaging unit to capture an edge area of ​​the substrate in at least one of the following states: i) a state in which the lift pin places the substrate on the support unit; ii) a state in which the lift pin lifts the substrate to a first height; and iii) a state in which the lift pin lifts the substrate to a second height.

[0015] In one embodiment, the system further includes a conveying robot having a hand on which a substrate is placed and conveying the substrate to a process chamber; and the controller can calculate the center point of the substrate and compare it with a preset center point of the substrate to teach the conveying position of the hand based thereon.

[0016] In one embodiment, the device may further include an alarm device that generates an alarm when the center point of the substrate calculated by the controller deviates from a preset center point of the substrate by more than a predetermined range.

[0017] In one embodiment, the apparatus further comprises a gas supply unit for supplying gas to a processing space; and a plasma source for exciting the gas into plasma, and the support unit may be provided as an electrostatic chuck that fixes a substrate by electrostatic force.

[0018] In addition, the present invention provides a substrate processing method. In one embodiment, when a substrate is placed on a lift pin provided in a support unit, an edge area of ​​the substrate is captured to calculate the center point of the substrate, and the degree of distortion of the substrate can be calculated by comparing the center point of the substrate with a preset center point of the substrate.

[0019] In one embodiment, the center point of a pre-set substrate can be obtained by capturing an edge area of ​​the substrate while the substrate is brought into the process chamber and placed on a lift pin before processing the substrate.

[0020] In one embodiment, after the processing of the substrate is finished and before the substrate is taken out of the process chamber, the edge area of ​​the substrate can be captured while the substrate is placed on the lift pin.

[0021] In one embodiment, a first image obtained by capturing an edge area of ​​a substrate while the substrate is placed on a lift pin after being brought into a process chamber, and a second image obtained by capturing an edge area of ​​a substrate while the substrate is placed on a lift pin before the substrate is taken out of the process chamber after processing is finished, can be compared to check the degree of misalignment of the substrate and determine whether to feed a subsequent substrate based on the degree of misalignment of the substrate.

[0022] In one embodiment, the edge area of ​​the substrate can be captured in at least one of the following states: i) the state in which the lift pin places the substrate on the support unit; ii) the state in which the lift pin lifts the substrate to a first height; and iii) the state in which the lift pin lifts the substrate to a second height.

[0023] In one embodiment, the center point of the substrate is calculated and compared with a preset center point of the substrate, and based on this, the transfer position of the transfer robot that transfers the substrate to the process chamber can be taught.

[0024] In one embodiment, an alarm can be generated when the center point of the substrate deviates from a predetermined center point of the substrate by more than a predetermined range.

[0025] In one embodiment, the treatment of the substrate may be a treatment of etching the substrate using plasma.

[0026] In one embodiment, the support unit may be provided to fix the substrate by electrostatic force. Effects of the invention

[0027] According to one embodiment of the present invention, a substrate can be processed efficiently.

[0028] In addition, according to one embodiment of the present invention, it is possible to determine whether the substrate is placed in the correct position.

[0029] In addition, according to one embodiment of the present invention, a robot that transports a substrate to a chamber based on the position of the substrate can be taught.

[0030] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings. Brief explanation of the drawing

[0031] Figure 1 is a drawing showing a typical substrate processing apparatus. FIG. 2 is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention. Figure 3 is a cross-sectional view showing the process module of Figure 2. FIG. 4 is a diagram showing a flowchart of a substrate processing method according to one embodiment of the present invention. FIGS. 5 to 13 are drawings sequentially illustrating a substrate processing method according to an embodiment of the present invention. Specific details for implementing the invention

[0032] Embodiments of the present invention are described below with reference to the attached drawings so that those skilled in the art can easily implement them. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in describing preferred embodiments of the present invention in detail, specific descriptions of related known functions or configurations are omitted if it is determined that such detailed descriptions may unnecessarily obscure the essence of the present invention. Additionally, the same reference numerals are used throughout the drawings for parts having similar functions and operations.

[0033] The term 'comprising' a component means that, unless specifically stated otherwise, it does not exclude other components but rather allows for the inclusion of additional components. Specifically, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0034] Singular expressions include plural expressions unless the context clearly indicates otherwise. Additionally, the shapes and sizes of elements in drawings may be exaggerated for clearer explanation.

[0035] Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited to the embodiments below. These embodiments are provided to more fully explain the present invention to those with average knowledge in the art. Accordingly, the shapes of the elements in the drawings have been exaggerated to emphasize clearer explanations.

[0036] In the embodiments of the present invention, a substrate processing apparatus for etching a substrate using plasma is described. However, the present invention is not limited thereto and can be applied to various types of apparatus that perform a process by supplying plasma into a chamber.

[0037] Referring to FIG. 2, the substrate processing device (1) has an index module (10), a loading module (30), and a process module (20), and the index module (10) has a load port (120), a transfer frame (140), and a buffer unit (2000). The load port (120), the transfer frame (140), and the process module (20) are arranged sequentially in a line. Hereinafter, the direction in which the load port (120), the transfer frame (140), the loading module (30), and the process module (20) are arranged is called the first direction (12), the direction perpendicular to the first direction (12) when viewed from above is called the second direction (14), and the direction perpendicular to the plane including the first direction (12) and the second direction (14) is called the third direction (16).

[0038] A carrier (18) containing a plurality of substrates (W) is seated in a load port (120). A plurality of load ports (120) are provided and arranged in a line along a second direction (14). A slot (not shown) is formed in the carrier (18) to support the edge of the substrate. A plurality of slots are provided in a third direction (16), and the substrates are positioned within the carrier to be stacked spaced apart from each other along the third direction (16). A Front Opening Unified Pod (FOUP) may be used as the carrier (18).

[0039] The transfer frame (140) transports a substrate (W) between a carrier (18), a buffer unit (2000), and a loading module (30) that are seated in a load port (120). The transfer frame (140) is provided with an index rail (142) and an index robot (144). The index rail (142) is provided with its longitudinal direction parallel to the second direction (14). The index robot (144) is installed on the index rail (142) and moves linearly along the index rail (142) in the second direction (14). The index robot (144) has a base (144a), a body (144b), and an index arm (144c). The base (144a) is installed to be movable along the index rail (142). The body (144b) is coupled to the base (144a). The body (144b) is provided to be movable along the third direction (16) on the base (144a).

[0040] Additionally, the body (144b) is provided to be rotatable on the base (144a). An index arm (144c) is coupled to the body (144b) and is provided to be able to move forward and backward relative to the body (144b). Multiple index arms (144c) are provided so that each is driven individually. The index arms (144c) are arranged to be stacked spaced apart from each other along the third direction (16). Some of the index arms (144c) may be used when transporting the substrate (W) from the process module (20) to the carrier (18), and some may be used when transporting the substrate (W) from the carrier (18) to the process module (20). This prevents particles generated from the substrate (W) before processing from adhering to the substrate (W) after processing during the process of the index robot (144) receiving and receiving the substrate (W).

[0041] The buffer unit (2000) temporarily stores the substrate (W). The buffer unit (2000) performs a process to remove process by-products remaining on the substrate (W). The buffer unit (2000) performs a post-processing process to post-process the substrate (W) processed in the process module (20). The post-processing process may be a process of purging purge gas onto the substrate (W). Multiple buffer units (2000) are provided. Each buffer unit (2000) is positioned opposite each other with the transfer frame (140) in between. The buffer units (2000) are arranged in a second direction (14). They are positioned on each side of the transfer frame (140). Optionally, a single buffer unit (2000) may be provided and positioned on one side of the transfer frame (140). The loading module (30) is positioned between the transfer frame (140) and the return unit (240). The loading module (30) replaces the atmospheric pressure atmosphere of the index module (10) with the vacuum atmosphere of the process module (20) for a substrate (W) introduced into the process module (20), or replaces the vacuum atmosphere of the process module (20) with the atmospheric pressure atmosphere of the index module (10) for a substrate (W) being sent out to the index module (10). The loading module (30) provides a space for the substrate (W) to stay before the substrate (W) is returned between the return unit (240) and the transfer frame (140). The loading module (30) includes a load lock chamber (32) and an unload lock chamber (34).

[0042] The load lock chamber (32) temporarily holds the substrate (W) being transported from the index module (10) to the process module (20). The load lock chamber (32) maintains an atmospheric pressure atmosphere in an atmospheric state and remains closed to the process module (20) while remaining open to the index module (10). When the substrate (W) is brought into the load lock chamber (32), the internal space is sealed to the index module (10) and the process module (20), respectively. Subsequently, the internal space of the load lock chamber (32) is changed from an atmospheric pressure atmosphere to a vacuum atmosphere and is opened to the process module (20) while remaining closed to the index module (10).

[0043] The unload lock chamber (34) temporarily holds the substrate (W) being transported from the process module (20) to the index module (10). The unload lock chamber (34) maintains a vacuum atmosphere in an atmospheric state and remains closed to the index module (10) while remaining open to the process module (20). When the substrate (W) is brought into the unload lock chamber (34), the internal space is sealed to the index module (10) and the process module (20), respectively. Subsequently, the internal space of the unload lock chamber (34) is changed from a vacuum atmosphere to an atmospheric pressure atmosphere and is opened to the index module (10) while remaining closed to the process module (20).

[0044] The process module (20) includes a return unit (240) and a plurality of process chambers.

[0045] The return unit (240) returns a substrate (W) between a load lock chamber (32), an unload lock chamber (34), and a plurality of process chambers (260). The return unit (240) includes a return chamber (242) and a return robot (250). The return chamber (242) may be provided in a hexagonal shape. Optionally, the return chamber (242) may be provided in a rectangular or pentagonal shape. The load lock chamber (32), the unload lock chamber (34), and the plurality of process chambers (260) are located around the return chamber (242). A return space (244) for returning the substrate (W) is provided inside the return chamber (242).

[0046] The return robot (250) returns the substrate (W) in the return space (244). The return robot (250) may be located in the center of the return chamber (240). The return robot (250) may have a plurality of hands (252) that can move in horizontal and vertical directions and can advance, retract, or rotate on a horizontal plane. Each hand (252) can be driven independently, and the substrate (W) can be placed horizontally on the hands (252).

[0047] Below, a plasma processing device (1000) provided in a process chamber (260) is described. The plasma processing device (1000) is described as a device for etching a substrate (W). However, the plasma processing device (1000) of this embodiment is not limited to an etching device and can be applied in various ways.

[0048] FIG. 3 is a cross-sectional view showing a process module according to an embodiment of the present invention. Referring to FIG. 3, a plasma processing device (1000) includes a process chamber (1100), a substrate support unit (1200), a gas supply unit (1300), a plasma source (1400), an exhaust baffle (1500), and an imaging unit (1600).

[0049] The process chamber (1100) has a processing space (110b) in which a substrate (W) is processed. The process chamber (1100) is provided in the shape of a circular tube. The process chamber (1100) is provided in a metal material. For example, the process chamber (1100) may be provided in an aluminum material. An opening is formed in one side wall of the process chamber (1100). The opening functions as an inlet for the substrate (W) to be taken in and out. The opening is opened and closed by a door (1120). The conveyor robot (252) of FIG. 2 conveys the substrate (W) to the inside or outside of the process chamber (1100) through the opening. A lower hole (1150) is formed on the bottom surface of the process chamber (1100). The lower hole (1150) is connected to a pressure reduction member (not shown). The processing space (110b) of the process chamber (1100) is exhausted by the pressure reduction member, and a pressure reduction atmosphere may be formed.

[0050] The substrate support unit (1200) supports the substrate (W) in the processing space (110b). The substrate support unit (1200) may be provided as an electrostatic chuck (1200) that supports the substrate (W) using electrostatic force. Optionally, the substrate support unit (1200) may support the substrate (W) in various ways, such as mechanical clamping.

[0051] The electrostatic chuck (1200) includes a dielectric plate (1210), a base (1230), and a focus ring (1250). The dielectric plate (1210) is provided as a dielectric plate (1210) containing a dielectric material. A substrate (W) is placed directly on the upper surface of the dielectric plate (1210). The dielectric plate (1210) is provided in the shape of a disc. The dielectric plate (1210) may have a radius smaller than that of the substrate (W). An internal electrode (1212) is installed inside the dielectric plate (1210). A power source (not shown) is connected to the internal electrode (1212), and power is applied from the power source (not shown). The internal electrode (1212) provides electrostatic force from the applied power (not shown) so that the substrate (W) is adsorbed to the dielectric plate (1210). A heater (1214) for heating the substrate (W) is installed inside the dielectric plate (1210). The heater (1214) may be located below the internal electrode (1212). The heater (1214) may be provided as a spiral-shaped coil.

[0052] The lift pin (1216) takes a substrate from the top of the dielectric plate (1210) and places the substrate on the dielectric plate (1210). The lift pin (1216) is raised and lowered by the lifting member (1218). The lift pin (1216) is lifted up when taking a substrate, and is lifted down when the substrate is placed on the lift pin (1216) so that the substrate can be placed on the dielectric plate (1210). Multiple lift pins (1216) may be provided at different locations on the dielectric plate (1210). For example, three lift pins (1216) may be provided spaced apart by a certain distance. In one example, the lift pins (1216) are provided so as not to overlap with the hand (252) of the aforementioned conveyor robot (242) when viewed from above. Accordingly, the hand (252) can move below the substrate (W) from the side of the lift pin (1216) without interference from the lift pin (1216) and lift the substrate (W). Additionally, while supporting the substrate (W) with the hand (252), the substrate (W) can be positioned on the top of the lift pin (1216) in the area where the lift pin (1216) and the substrate (W) overlap when viewed from above.

[0053] The base (1230) supports the dielectric plate (1210). The base (1230) is located below the dielectric plate (1210) and is fixedly coupled to the dielectric plate (1210). The upper surface of the base (1230) has a stepped shape such that its central region is higher than the edge region. The base (1230) has an area in which the central region of its upper surface corresponds to the bottom surface of the dielectric plate (1210). A cooling channel (1232) is formed inside the base (1230). The cooling channel (232) is provided as a passage through which a cooling fluid circulates. The cooling channel (1232) may be provided in a spiral shape inside the base (1230). The base is connected to a high-frequency power source (1234) located externally. The high-frequency power source (1234) applies power to the base (1230). Power applied to the base (1230) guides the plasma generated within the process chamber (1100) to move toward the base (1230). The base (1230) may be provided with a metal material.

[0054] The focus ring (1250) focuses plasma onto the substrate (W). The focus ring (1250) includes an inner ring (1252) and an outer ring (1254). The inner ring (1252) is provided in the shape of an annular ring that surrounds the dielectric plate (1210). The inner ring (1252) is positioned at the edge region of the base (1230). The upper surface of the inner ring (1252) is provided to have the same height as the upper surface of the dielectric plate (1210). The inner portion of the upper surface of the inner ring (1252) supports the lower edge region of the substrate (W). For example, the inner ring (1252) may be provided with a conductive material. The outer ring (1254) is provided in the shape of an annular ring that surrounds the inner ring (1252). The outer ring (1254) is positioned adjacent to the inner ring (1252) in the edge region of the base (1230). The outer ring (1254) has a higher top relative to the inner ring (1252). The outer ring (1254) may be provided with an insulating material.

[0055] A gas supply unit (1300) supplies process gas onto a substrate (W) supported by a substrate support unit (1200). The gas supply unit (1300) includes a gas storage unit (1350), a gas supply line (1330), and a gas inlet port (1310). The gas supply line (1330) connects the gas storage unit (1350) and the gas inlet port (1310). Process gas stored in the gas storage unit (1350) is supplied to the gas inlet port (1310) through the gas supply line (1330). The gas inlet port (1310) is installed on the upper wall of the process chamber (1100). The gas inlet port (1310) is positioned opposite the substrate support unit (1200). In one example, the gas inlet port (1310) may be installed at the center of the upper wall of the process chamber (1100). A valve is installed in the gas supply line (1330) to open and close the internal passage or to control the flow rate of the gas flowing through the internal passage. For example, the process gas may be an etching gas.

[0056] A plasma source (1400) excites the process gas within the process chamber (1100) into a plasma state. An inductively coupled plasma (ICP) source may be used as the plasma source (1400). Alternatively, a capacitively coupled plasma (CCP) source may be used as the plasma source. The capacitively coupled plasma may include an upper electrode and a lower electrode inside the process chamber (1100). The upper electrode and the lower electrode may be arranged vertically and parallel to each other inside the process chamber (1100). High-frequency power may be applied to one of the two electrodes, and the other electrode may be grounded. An electromagnetic field is formed in the space between the two electrodes, and the process gas supplied to this space may be excited into a plasma state. A substrate (W) processing process is performed using this plasma. According to one example, the upper electrode may be provided in the shape of a shower head, and the lower electrode may be provided as an electrode plate. High-frequency power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, high-frequency power can be applied to both the upper electrode and the lower electrode. This generates an electromagnetic field between the upper electrode and the lower electrode. The generated electromagnetic field excites the process gas supplied into the process chamber (1100) into a plasma state.

[0057] The plasma source (1400) includes an antenna (1410) and an external power source (1430). The antenna (1410) is positioned on the upper outer side of the process chamber (1100). The antenna (1410) is provided in a spiral shape with multiple turns and is connected to the external power source (1430). The antenna (1410) receives power from the external power source (1430). The antenna (1410) to which power is applied forms a discharge space in the internal space of the process chamber (1100). The process gas remaining in the discharge space can be excited to a plasma state.

[0058] The exhaust baffle (1500) uniformly exhausts plasma in a region-by-region manner in the processing space (110b). The exhaust baffle (1500) has an annular ring shape. The exhaust baffle (1500) is located between the inner wall of the process chamber (1100) and the substrate support unit (1200) in the processing space (110b). A plurality of exhaust holes (1502) are formed in the exhaust baffle (1500). The exhaust holes (1502) are provided to face upward and downward directions. The exhaust holes (1502) are provided as holes extending from the top to the bottom of the exhaust baffle (1500). The exhaust holes (1502) are arranged spaced apart from each other along the circumferential direction of the exhaust baffle (1500). Each exhaust hole (1502) has a slit shape and has a longitudinal direction facing the radial direction.

[0059] The imaging unit (700) captures the vicinity of the support unit (1200) to obtain image information. The imaging unit (700) may include a fixing member (710) and an imaging member (720). The fixing member (710) connects the imaging member (720) to the process chamber (1100). In one example, the fixing member (710) fixes the imaging member (720) to the inner wall of the process chamber (1100). In one example, the fixing member (710) may fix the imaging member (720) so that it is positioned above the support unit (1200). In one example, the imaging member (720) may be provided as a plurality of cameras installed at different locations within the processing space (110b). In one example, when viewed from above the process chamber (1100), the imaging member (720) may be positioned to have the same circumferential angle with respect to the center point of the support unit (1200). For example, three imaging members (720) may be positioned at 120-degree intervals with respect to the center point of the support unit (1200). In one example, the imaging member (720) is provided to image an edge area of ​​the substrate (W). In one example, the imaging member (720) is provided to image a lift pin (1216). In one example, the imaging member (720) is provided to have multiple focal points. For example, the imaging member (720) is provided to acquire an image by focusing on the edge area of ​​the substrate (W) and the top of the lift pin (1216).

[0060] A controller (not shown) obtains image information from an imaging unit (700) and compares it with reference information. For example, using image information of the edge area of ​​the substrate (W) provided by the imaging unit (700), the center point of the substrate (W) is detected and compared with a preset center point image of the substrate (W). Based on the comparison result, the controller (not shown) determines whether to perform processing on the substrate (W) or teaches the position of the hand (252) of the transport robot (242).

[0061] For example, if the center point of the substrate (W) according to the image information provided by the imaging unit (700) deviates from the preset center point of the substrate (W) by more than a certain level, the processing of the substrate can be ordered to be stopped. Alternatively, an alarm device (not shown) can be used to generate an alarm. In addition, the position of the hand (252) of the transport robot (242) can be taught so that the center point of the substrate (W) according to the image information provided by the imaging unit (700) matches the preset center point of the substrate (W).

[0062] Hereinafter, with reference to FIGS. 5 to 11, a method for processing a substrate (W) using the substrate processing device (2000) of the present invention will be described in detail. In one example, the substrate processing method of the present invention calculates the center point of the substrate (W) based on image information provided by the imaging unit (700) when the substrate (W) is placed on the lift pin (1216), and calculates the degree of misalignment of the substrate (W) by comparing the center point of the substrate (W) with a preset center point of the substrate (W). The processing of the substrate (W) is described as plasma etching the substrate (W) using the substrate processing device (2000) described above. However, the processing of the substrate (W) is not limited thereto and can be applied to various processes requiring centering of the substrate (W). A controller (not shown) controls the substrate processing device (2000) to perform the substrate processing method of the present invention.

[0063] FIG. 4 shows a flowchart of the substrate processing method of the present invention, and FIGS. 5 to 11 are drawings sequentially showing the substrate processing method of the present invention. Referring to FIG. 4, the substrate processing method of the present invention includes a first imaging step (S10), a substrate processing step (S20), a second imaging step (S30), and a transfer robot teaching step (S40).

[0064] Before the first imaging step (S10) is performed, a transfer robot (242) brings the substrate (W) into the process chamber as shown in FIG. 5. Afterward, the transfer robot (242) places the substrate (W) on the lift pin (1216) as shown in FIG. 6. After the transfer robot (242) places the substrate (W) on the lift pin (1216), the transfer robot (242) exits the process chamber. Afterward, the opening is closed, and the lift pin (1216) lowers the substrate (W) and places it on the support unit.

[0065] In one example, in the first imaging step (S10), as shown in FIG. 8, the imaging unit (700) images the edge area of ​​the substrate (W) while it is placed on the lift pin (1216). The controller sets the center point of the substrate (W) based on the image information obtained by imaging the edge area of ​​the substrate (W).

[0066] Afterwards, in the substrate processing step (S20), the substrate (W) is plasma etched as shown in FIG. 9.

[0067] When the processing of the substrate (W) is completed, the substrate (W) is lifted up by the lift pin (1216), and a second imaging step (S30) is performed. The substrate (W) is raised to a height such that the transport robot (242) can lift and transport the substrate (W). In one example, the substrate (W) is not raised to the target height all at once, but is raised sequentially. For instance, while the substrate (W) is seated on the support unit, it is raised through a first height to a second height, and the substrate (W) remains at the first height for a predetermined time. During this process, a second imaging step (S30) is performed.

[0068] That is, in the second imaging step (S30), the imaging unit (700) can image the edge area of ​​the substrate (W) while the substrate (W) is placed on the lift pin (1216) before the substrate (W) is removed from the process chamber after the processing of the substrate (W) is finished. In one example, the second imaging step (S30) can be performed in at least one of the following three states (i), ii), and iii).

[0069] i) A state in which the lift pin (1216) places the substrate (W) on the support unit (see FIG. 10)

[0070] ii) The state in which the lift pin (1216) lifts the substrate (W) to a first height (see FIG. 11)

[0071] iii) A state in which the lift pin (1216) has lifted the substrate (W) to a second height (see FIG. 12)

[0072] In the second imaging step (S30), the center point of the substrate (W) is detected based on image information obtained by capturing the edge area of ​​the substrate (W), and this is compared with the center point of the substrate (W) set through the first imaging step (S10). If the center point of the substrate (W) detected in the second imaging step (S30) deviates more than a predetermined range from the center point of the substrate (W) obtained in the second imaging step (S30), the process may be stopped. For example, by comparing the first image obtained by capturing the edge area of ​​the substrate (W) in the first imaging step (S10) with the second image obtained in the second imaging step (S30), the degree of misalignment of the substrate (W) may be checked, and whether to insert a subsequent substrate (W) may be determined based on the degree of misalignment of the substrate (W). Alternatively, an alarm may be generated by an alarm device.

[0073] After the second imaging step (S30), a return robot teaching step (S40) is performed. In the return robot teaching step (S40), the hand (252) of the return robot (242) is taught based on the degree of misalignment of the substrate (W) calculated in the second imaging step (S30). When the teaching is completed, the substrate (W) is removed from the return chamber as shown in FIG. 13.

[0074] In the example described above, the first imaging step (S10), the substrate processing step (S20), the second imaging step (S30), and the return robot teaching step (S40) are described as being performed sequentially. However, the first imaging step (S10) can be omitted, and the second imaging step (S30) can be performed by utilizing the center point image of the substrate (W) stored in the controller.

[0075] In the example described above, the substrate (W) is described as being provided in a state placed on a support unit during the first imaging step (S10). However, unlike this, the first imaging step (S10) can be performed in at least one of the following three states (i), ii), and iii)), as in the second imaging step (S30).

[0076] i) A state in which the lift pin (1216) places the substrate (W) on the support unit (see FIG. 10)

[0077] ii) The state in which the lift pin (1216) lifts the substrate (W) to a first height (see FIG. 11)

[0078] iii) A state in which the lift pin (1216) has lifted the substrate (W) to a second height (see FIG. 12)

[0079] The above detailed description is illustrative of the present invention. Furthermore, the foregoing describes preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, modifications or alterations are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the disclosed content, and / or the scope of the art or knowledge. The described embodiments describe the best state for implementing the technical concept of the present invention, and various modifications required for specific fields of application and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the present invention to the disclosed embodiments. Additionally, the appended claims should be interpreted as including other embodiments.

Claims

Claim 1 A substrate processing device comprising: a process chamber having a processing space inside; a support unit for supporting a substrate in the processing space; an imaging unit for capturing an edge area of ​​a substrate to acquire image information; and a controller, wherein the support unit comprises a lift pin for raising and lowering a substrate; and a lifting member for raising and lowering the lift pin, wherein the controller calculates a center point of the substrate based on the image information when the substrate is placed on the lift pin, and calculates the degree of misalignment of the substrate by comparing the center point of the substrate with a preset center point of the substrate, wherein the controller compares a first image obtained by capturing an edge area of ​​the substrate while the substrate is placed on the lift pin after being introduced into the process chamber, and a second image obtained by capturing an edge area of ​​the substrate while the substrate is placed on the lift pin before the substrate is removed from the process chamber after the processing of the substrate is finished, to confirm the degree of misalignment of the substrate and determine whether to introduce a subsequent substrate based on the degree of misalignment of the substrate. Claim 2 In claim 1, the imaging unit comprises a plurality of cameras installed at different locations within the processing space, forming a substrate processing device. Claim 3 A substrate processing device according to claim 1, wherein the center point of the substrate set above is set based on an image obtained by capturing the edge area of ​​the substrate while the substrate introduced into the process chamber is placed on the lift pin before processing the substrate. Claim 4 In paragraph 3, the controller controls the lifting member and the imaging unit to image the edge area of ​​the substrate while the substrate is placed on the lift pin before the substrate is removed from the process chamber after the processing of the substrate is finished. Claim 5 delete Claim 6 A substrate processing device according to any one of claims 1 to 4, wherein the controller controls the lifting member and the imaging unit to image the edge area of ​​the substrate in at least one of the following states: i) a state in which the lift pin places the substrate on the support unit; ii) a state in which the lift pin lifts the substrate to a first height; and iii) a state in which the lift pin lifts the substrate to a second height. Claim 7 A substrate processing device according to claim 1, further comprising a conveying robot having a hand on which a substrate is placed and conveying the substrate to the process chamber, wherein the controller calculates the center point of the substrate and compares it with a preset center point of the substrate to teach the conveying position of the hand based thereon. Claim 8 A substrate processing device according to claim 1, further comprising an alarm device that generates an alarm when the center point of the substrate calculated by the controller deviates from a preset center point of the substrate by more than a predetermined range. Claim 9 A substrate processing apparatus according to claim 1, further comprising: a gas supply unit for supplying gas to the processing space; and a plasma source for exciting the gas into plasma, wherein the support unit is provided as an electrostatic chuck for fixing the substrate by electrostatic force. Claim 10 A method for processing a substrate placed on a support unit located within a process chamber, wherein when the substrate is placed on a lift pin provided in the support unit, an edge area of ​​the substrate is captured to calculate the center point of the substrate, and the degree of misalignment of the substrate is calculated by comparing the center point of the substrate with a preset center point of the substrate; a first image obtained by capturing the edge area of ​​the substrate while the substrate is placed on the lift pin after being introduced into the process chamber, and a second image obtained by capturing the edge area of ​​the substrate while the substrate is placed on the lift pin before the substrate is removed from the process chamber after processing is finished, thereby confirming the degree of misalignment of the substrate and determining whether to introduce a subsequent substrate based on the degree of misalignment of the substrate. Claim 11 In claim 10, the center point of the substrate set above is obtained by capturing the edge area of ​​the substrate while the substrate is brought into the process chamber and placed on the lift pin before processing the substrate. Claim 12 A substrate processing method according to claim 11, wherein the edge area of ​​the substrate is captured while the substrate is placed on a lift pin before the substrate is removed from the process chamber after the substrate processing is finished. Claim 13 delete Claim 14 A substrate processing method according to any one of claims 10 to 12, wherein at least one of the following states is used to image an edge area of ​​a substrate: i) a state in which the lift pin places the substrate on a support unit; ii) a state in which the lift pin lifts the substrate to a first height; and iii) a state in which the lift pin lifts the substrate to a second height. Claim 15 A substrate processing method according to claim 10, wherein the center point of the substrate is calculated and compared with a pre-set center point of the substrate, and based thereon, the transfer position of a transfer robot that transfers the substrate to the process chamber is taught. Claim 16 A substrate processing method according to claim 10, wherein an alarm is generated when the center point of the substrate deviates from a predetermined center point of the substrate by more than a predetermined range. Claim 17 In claim 10, the substrate processing method is a process of etching the substrate using plasma. Claim 18 In claim 10, the above support unit is provided to fix the substrate by electrostatic force in a substrate processing method.

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