Germanium-On-Silicon Avalanche Photodetector In Silicon Photonics Platform, Method Of Making The Same
A CMOS-compatible germanium-on-silicon avalanche photodetector with a SACM design addresses high optical loss and low responsivity in optical communication systems by providing low breakdown voltage and high-speed operation with reduced dark current, leveraging a vertical or lateral PIN junction structure on a silicon-on-insulator substrate.
US20260156951A1Pending Publication Date: 2026-06-04MARVELL ASIA PTE LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- MARVELL ASIA PTE LTD
- Filing Date
- 2025-06-16
- Publication Date
- 2026-06-04
Smart Images
Figure US20260156951A1-D00000_ABST
Abstract
A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.
Need to check novelty before this filing date? Find Prior Art