Display device and manufacturing method therefor

Abstract

According to one embodiment of the present invention, a display device comprises: a first pixel electrode; a bank layer overlapping the first pixel electrode and having a first opening and an overhang portion; a first protective layer between an edge portion of the first pixel electrode and the overhang portion of the bank layer; an intermediate layer overlapping the first pixel electrode; and a counter electrode on the intermediate layer, wherein the overhang portion has a horizontal length from a first edge of a first side surface of the first protective layer to an edge of the overhang portion and a vertical distance from the upper surface of the first pixel electrode to the overhang portion, the intermediate layer includes a charge generation layer, lower sub-layers below the charge generation layer, and upper sub-layers above the charge generation layer, and the lower sub-layers and the charge generation layer each include a plurality of portions separated by the overhang portion.

Description

Display device and manufacturing method thereof

[0001] One or more embodiments relate to a display device and a method of manufacturing the same.

[0002] As display devices that visually display electrical signals evolve, a variety of display devices with superior characteristics, such as thinness, weight reduction, and low power consumption, are being introduced. As the demand for display devices to provide high-quality images continues, display devices with diverse structures are being developed.

[0003] One or more embodiments include a structure of a display device and a method of manufacturing the same.

[0004] One or more embodiments include a structure of a display device and a method of manufacturing the display device.

[0005] Additional aspects will be partly explained in the description that follows, and some will be apparent from the description, or may be learned by repetition of the examples presented.

[0006] According to one or more embodiments, the device may include a first pixel electrode, a bank layer having a first opening overlapping the first pixel electrode, and an overhang portion positioned on an upper surface of the first pixel electrode, a first protective layer interposed between an edge portion of the first pixel electrode and the overhang portion of the bank layer, an intermediate layer overlapping the first pixel electrode through the first opening of the bank layer and including a plurality of sub-layers, and a counter electrode on the intermediate layer, wherein the overhang portion has a horizontal length from a first edge of a first side surface of the first protective layer to an edge of the overhang portion and a vertical distance from an upper surface of the first pixel electrode to the overhang portion, and the plurality of sub-layers of the intermediate layer include a charge generation layer, lower sub-layers below the charge generation layer, and upper sub-layers above the charge generation layer, wherein the lower sub-layers and the charge generation layer may each include a plurality of portions separated by the overhang portion. Start the display device.

[0007] The charge generation layer may include an N-type sub-charge generation layer including an N-type dopant material and an N-type host material, and a P-type sub-charge generation layer including a P-type dopant material and a P-type host material.

[0008] The sum of the thicknesses of the lower sub-layers and the thickness of the charge generation layer may be greater than the vertical distance from the upper surface of the first pixel electrode to the overhang.

[0009] At least one of the upper sub-layers may extend continuously without separation around the overhang.

[0010] The above counter electrode can be extended continuously without being separated around the overhang.

[0011] The horizontal length of the above overhang may be greater than the vertical distance.

[0012] The lower sub-layers and the upper sub-layers may each include a functional layer including a light-emitting layer, a lower common layer below the functional layer, and an upper common layer above the functional layer.

[0013] The first pixel electrode and the adjacent second pixel electrode are further included, and the intermediate layer further includes another functional layer overlapping the second pixel electrode and including a light-emitting layer, wherein the functional layer and the other functional layer may be spaced apart from each other.

[0014] The first protective layer includes a second side opposite the first side, and a second edge where the second side of the first protective layer and the upper surface of the first pixel electrode meet can be spaced apart from a third edge where the side surface of the first pixel electrode and the upper surface of the first pixel electrode meet.

[0015] The first protective layer may extend past the side surface of the first pixel electrode and onto the upper surface of the insulating layer disposed under the first pixel electrode.

[0016] The above first protective layer can be in direct contact with the side surface of the first pixel electrode.

[0017] The first pixel electrode includes a first layer, a second layer on the first layer, and a third layer on the second layer, and the inclination angle of the side surface of the second layer may be greater than at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer.

[0018] The above first protective layer may include a metal oxide.

[0019] According to one or more embodiments, a bank layer having a first pixel electrode, a first opening overlapping the first pixel electrode, and an overhang portion positioned on an upper surface of the first pixel electrode, a first protective layer interposed between an edge portion of the first pixel electrode and the overhang portion of the bank layer, an intermediate layer overlapping the first pixel electrode through the first opening of the bank layer, and a counter electrode on the intermediate layer, wherein the intermediate layer includes a plurality of sublayers, at least one of the plurality of sublayers includes a plurality of portions separated with the overhang portion as the center, the overhang portion having a horizontal length from a first edge of a first side surface of the first protective layer to an edge of the overhang portion and a vertical distance from an upper surface of the first pixel electrode to the overhang portion, the first protective layer including a second side surface opposite the first side surface, and a first inclination angle of the second side surface of the first protective layer is A display device is disclosed, wherein the second inclination angle of the side surface of the first pixel electrode is different.

[0020] The above first slope angle may be greater than the above second slope angle.

[0021] The horizontal length of the above overhang may be greater than the vertical distance.

[0022] The second side of the first protective layer meets the side of the first pixel electrode at the second edge opposite the first edge, and a minor angle formed by the second side of the first protective layer and the side of the first pixel electrode may be greater than about 90° and less than about 180°.

[0023] The first pixel electrode includes a first layer, a second layer on the first layer, and a third layer on the second layer, wherein the inclination angle of the side surface of the second layer may be different from at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer.

[0024] The inclination angle of the side surface of the second layer may be greater than at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer.

[0025] The plurality of sub-layers of the intermediate layer may include a charge generation layer, lower sub-layers below the charge generation layer, and upper sub-layers above the charge generation layer, wherein the lower sub-layers and the charge generation layer may each include a plurality of portions separated by the overhang portion.

[0026] The charge generation layer may include an N-type sub-charge generation layer including an N-type dopant material and an N-type host material, and a P-type sub-charge generation layer including a P-type dopant material and a P-type host material.

[0027] The sum of the thicknesses of the lower sub-layers and the thickness of the charge generation layer may be greater than the vertical distance from the upper surface of the first pixel electrode to the overhang.

[0028] At least one of the upper sub-layers may extend continuously without separation around the overhang.

[0029] The lower sub-layers and the upper sub-layers may each include a functional layer including a light-emitting layer, a lower common layer below the functional layer, and an upper common layer above the functional layer.

[0030] The upper common layer and the lower common layer can be in direct contact with the bank layer.

[0031] The above first protective layer may include a metal oxide.

[0032] According to one or more embodiments, a method of forming a first stacked structure including a first pixel electrode and a first protective layer on the first pixel electrode and a second stacked structure including a second pixel electrode and a second protective layer on the second pixel electrode, a method of forming a bank layer covering a side surface of the first stacked structure and a side surface of the second stacked structure and having a first opening overlapping the first pixel electrode and a second opening overlapping the second pixel electrode, a method of removing a portion of the first protective layer and a portion of the second protective layer through the first opening and the second opening of the bank layer, a method of forming an intermediate layer including a charge generation layer, and a method of forming a counter electrode on the intermediate layer, wherein in the method of removing a portion of the first protective layer and a portion of the second protective layer, the bank layer includes an overhang portion positioned on an upper surface of each of the first pixel electrode and the second pixel electrode, and the overhang portion on the first pixel electrode is formed by a first protective layer. A method for manufacturing a display device is disclosed, wherein the charge generation layer has a horizontal length from a first edge of a first side to an edge of the overhang and a vertical distance from an upper surface of the first pixel electrode to the overhang, and in a process of forming the intermediate layer, the charge generation layer includes a plurality of portions separated by the overhang.

[0033] The intermediate layer further includes lower sub-layers below the charge generation layer and upper sub-layers above the charge generation layer, and in the process of forming the intermediate layer, the lower sub-layers may include a plurality of portions separated by the overhang portion.

[0034] At least one of the upper sub-layers may extend continuously without separation around the overhang.

[0035] The lower sub-layers and the upper sub-layers may each include a functional layer including a light-emitting layer, a lower common layer below the functional layer, and an upper common layer above the functional layer.

[0036] The upper common layer and the lower common layer can be in direct contact with the bank layer.

[0037] The above counter electrode can be extended continuously without being separated around the overhang.

[0038] The horizontal length of the above overhang may be greater than the vertical distance.

[0039] Each of the first protective layer and the second protective layer may include a metal oxide.

[0040] The process for forming the first stacked structure and the second stacked structure may include a process for forming the first pixel electrode and the second pixel electrode that are spaced apart from each other, a process for forming a pre-protective layer on the first pixel electrode and the second pixel electrode, a process for forming photoresists that are disposed on the pre-protective layer and overlap each of the first pixel electrode and the second pixel electrode, and a process for forming the first protective layer and the second protective layer by removing the pre-protective layer that does not overlap the photoresists.

[0041] The width of each of the photoresists is smaller than the width of the overlapping pixel electrode among the first pixel electrode and the second pixel electrode, and the second side opposite the first side of the first protective layer can meet the upper surface of the first pixel electrode.

[0042] The width of each of the photoresists is greater than the width of the overlapping pixel electrode among the first pixel electrode and the second pixel electrode, and the first protective layer can overlap the side surface of the first pixel electrode.

[0043] The above first protective layer can be in direct contact with the upper surface of the insulating layer under the first pixel electrode.

[0044] The charge generation layer may include an N-type sub-charge generation layer including an N-type dopant material and an N-type host material, and a P-type sub-charge generation layer including a P-type dopant material and a P-type host material.

[0045] The sum of the thicknesses of the lower sub-layers and the thickness of the charge generation layer may be greater than the vertical distance from the upper surface of the first pixel electrode to the overhang.

[0046] The first protective layer includes a second side opposite the first side, and a first inclination angle of the second side of the first protective layer may be different from a second inclination angle of the side of the first pixel electrode.

[0047] The above first slope angle may be greater than the above second slope angle.

[0048] The second side of the first protective layer meets the side of the first pixel electrode at the second edge opposite the first edge, and a minor angle formed by the second side of the first protective layer and the side of the first pixel electrode with the second edge as the center may be greater than 90° and less than 180°.

[0049] The first pixel electrode includes a first layer, a second layer on the first layer, and a third layer on the second layer, wherein at least one selected from the inclination angle of the side surface of the first layer or the inclination angle of the side surface of the third layer may be different from the inclination angle of the side surface of the second layer.

[0050] The inclination angle of the side surface of the second layer may be greater than at least one selected from the inclination angle of the side surface of the first layer or the inclination angle of the side surface of the third layer.

[0051] According to one embodiment, a bank layer having an overhang can be formed without dissolving a material included in a pixel electrode, and the display quality of a display device can be improved by making a charge generation layer have a plurality of parts separated by the overhang.

[0052] According to one embodiment, a bank layer having an overhang can be formed through a simple process without dissolving a material included in a pixel electrode, and the display quality of a display device can be improved by allowing a charge generation layer to have multiple portions separated by the overhang.

[0053] These effects are exemplary and the scope of the present invention is not limited by the above-described effects.

[0054] The above and other aspects, features and advantages of the embodiments of the present invention will become more apparent from the description taken in conjunction with the accompanying drawings.

[0055] FIG. 1 is a schematic plan view schematically illustrating a display device according to one embodiment of the present invention.

[0056] FIG. 2 is a schematic cross-sectional view showing a part of a display device (10) according to one embodiment of the present invention.

[0057] Figure 3 is a schematic cross-sectional view showing an enlarged portion of part III of Figure 2.

[0058] Figure 4 is a schematic cross-sectional view showing an enlarged portion of section IV of Figure 3.

[0059] FIG. 5a is a schematic cross-sectional view schematically illustrating a display device according to one embodiment of the present invention, and FIG. 5b is a schematic cross-sectional view enlarged to illustrate part V of FIG. 5a.

[0060] FIGS. 6 to 10 are schematic cross-sectional views schematically illustrating a process for forming a display device according to one embodiment of the present invention.

[0061] FIGS. 11A to 11D are schematic cross-sectional views showing a process of a method for manufacturing a display device according to one embodiment of the present invention.

[0062] Figures 12a to 12d illustrate a process of a method for manufacturing a display device according to one embodiment of the present invention.

[0063] FIG. 13 is a schematic cross-sectional view showing a portion of a display device according to one embodiment of the present invention.

[0064] Figure 14 is a schematic cross-sectional view showing an enlarged portion of section XIV of Figure 13.

[0065] Fig. 15 is a schematic cross-sectional view showing an enlarged portion of section XV of Fig. 14.

[0066] FIGS. 16A to 16F are schematic cross-sectional views schematically illustrating a process for forming a display device according to one embodiment of the present invention.

[0067] According to one or more embodiments, the device may include a first pixel electrode, a bank layer having a first opening overlapping the first pixel electrode, and an overhang portion positioned on an upper surface of the first pixel electrode, a first protective layer interposed between an edge portion of the first pixel electrode and the overhang portion of the bank layer, an intermediate layer overlapping the first pixel electrode through the first opening of the bank layer and including a plurality of sub-layers, and a counter electrode on the intermediate layer, wherein the overhang portion has a horizontal length from a first edge of a first side surface of the first protective layer to an edge of the overhang portion and a vertical distance from an upper surface of the first pixel electrode to the overhang portion, and the plurality of sub-layers of the intermediate layer include a charge generation layer, lower sub-layers below the charge generation layer, and upper sub-layers above the charge generation layer, wherein the lower sub-layers and the charge generation layer may each include a plurality of portions separated by the overhang portion. Initiates the display device.

[0068] According to one or more embodiments, a bank layer having a first pixel electrode, a first opening overlapping the first pixel electrode, and an overhang portion positioned on an upper surface of the first pixel electrode, a first protective layer interposed between an edge portion of the first pixel electrode and the overhang portion of the bank layer, an intermediate layer overlapping the first pixel electrode through the first opening of the bank layer, and a counter electrode on the intermediate layer, wherein the intermediate layer includes a plurality of sublayers, at least one of the plurality of sublayers includes a plurality of portions separated with the overhang portion as the center, the overhang portion having a horizontal length from a first edge of a first side surface of the first protective layer to an edge of the overhang portion and a vertical distance from an upper surface of the first pixel electrode to the overhang portion, the first protective layer including a second side surface opposite the first side surface, and a first inclination angle of the second side surface of the first protective layer is A display device is disclosed, wherein the second inclination angle of the side surface of the first pixel electrode is different.

[0069] According to one or more embodiments, a method of forming a first stacked structure including a first pixel electrode and a first protective layer on the first pixel electrode and a second stacked structure including a second pixel electrode and a second protective layer on the second pixel electrode, a method of forming a bank layer covering a side surface of the first stacked structure and a side surface of the second stacked structure and having a first opening overlapping the first pixel electrode and a second opening overlapping the second pixel electrode, a method of removing a portion of the first protective layer and a portion of the second protective layer through the first opening and the second opening of the bank layer, a method of forming an intermediate layer including a charge generation layer, and a method of forming a counter electrode on the intermediate layer, wherein in the method of removing a portion of the first protective layer and a portion of the second protective layer, the bank layer includes an overhang portion positioned on an upper surface of each of the first pixel electrode and the second pixel electrode, and the overhang portion on the first pixel electrode is formed by a first protective layer. A method for manufacturing a display device is disclosed, wherein the charge generation layer has a horizontal length from a first edge of a first side to an edge of the overhang and a vertical distance from an upper surface of the first pixel electrode to the overhang, and in a process of forming the intermediate layer, the charge generation layer includes a plurality of portions separated by the overhang.

[0070] Reference numerals will be described in detail in the embodiments illustrated in the accompanying drawings, with like reference numerals representing like elements throughout. In this regard, the embodiments may have different forms and should not be construed as limited to the description presented herein. The embodiments are described below with reference to the drawings to illustrate aspects of the detailed description.

[0071] The term “and / or” as used herein includes any and all combinations of one or more related items.

[0072] Throughout this disclosure, the expression “at least one of a, b, or c” may include a, b, a and b, b and c, a and c, all of a, b, c, or various combinations thereof.

[0073] Because the present disclosure allows for various modifications and numerous embodiments, embodiments are illustrated in the drawings and described in detail in the description. The effects and features of the present disclosure, as well as methods for achieving them, are clearly explained with reference to the embodiments described in detail below with reference to the drawings. However, the present disclosure is not limited to the following embodiments and may be embodied in various forms.

[0074] Hereinafter, the embodiments are described in detail with reference to the attached drawings, and the same or corresponding elements are indicated by the same reference numerals throughout, and a repeated description thereof may be omitted.

[0075] While the terms "first," "second," etc. may be used to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another.

[0076] The singular forms "a," "an," and "the" used herein are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0077] It should be understood that the terms "comprising," "including," and "having" indicate the presence of features or elements described in the specification, but do not exclude the possibility that one or more other features or elements may be present or added.

[0078] Additionally, when a layer, region or component is referred to as being "over" another layer, region or component, it will be further understood that it may be directly over the other layer, region or component, or indirectly over the other layer, region or component with other layers, regions or components therebetween.

[0079] The term "overlap" or "overlapped" means that the first object may be on top of, below, or next to the second object, or vice versa. Furthermore, the term "overlap" may include layers, stacks, surfaces, or facings, extending, covering, or partially covering, or other appropriate terms understood and recognized by a person skilled in the art.

[0080] The terms "face" and "facing" imply that the first element can directly or indirectly replace the second element. If a third element intervenes between the first and second elements, the first and second elements can be understood as facing each other but indirectly replacing each other.

[0081] When elements are described as 'not overlapping' or 'not overlapping' with other elements, this may include the elements being spaced apart from each other, offset from each other, set apart from each other, or other appropriate terms understood and recognized by a person skilled in the art.

[0082] The sizes of components in the drawings may be exaggerated or reduced for convenience of explanation. For example, the sizes and thicknesses of each component shown in the drawings are arbitrarily indicated for convenience of explanation, and therefore the present invention is not necessarily limited to what is shown.

[0083] In some embodiments, where implementations are otherwise feasible, specific process sequences may be performed in a different order than described. For example, two processes described in succession may be performed substantially simultaneously, or in a reverse order from the described order.

[0084] In the following examples, when it is said that a film, region, component, etc. are connected, it includes cases where the films, regions, components, etc. are directly connected, and / or cases where other films, regions, components, etc. are interposed between the films, regions, components, etc. and are indirectly connected. For example, when it is said in this specification that a film, region, component, etc. are electrically connected, it refers to cases where the films, regions, components, etc. are directly electrically connected, and / or cases where other films, regions, components, etc. are interposed between them and are indirectly electrically connected.

[0085] The x-axis, y-axis, and z-axis are not limited to the three axes in the Cartesian coordinate system, but can be interpreted in a broader sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but they can also refer to different directions that are not orthogonal to each other.

[0086] As used herein, "about" or "approximately" means within an acceptable range of deviation from the stated value as determined by one of ordinary skill in the art, taking into account the measurement and the errors associated with measuring a particular quantity (i.e., limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ± 30%, 20%, 10%, or 5% of the stated value.

[0087] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art relevant to the disclosed material. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0088] FIG. 1 is a schematic plan view schematically showing a display device (10) according to one embodiment of the present invention.

[0089] Referring to FIG. 1, the display device (10) may include a display area (DA) that displays an image and a non-display area (NDA) outside the display area (DA). The display area (DA) may be entirely surrounded by the non-display area (NDA).

[0090] When the display area (DA) is viewed as a planar shape, the display area (DA) may have a rectangular shape. In one embodiment, the display area (DA) may have a polygonal shape (e.g., a triangle, a pentagon, or a hexagon), a circular shape, an oval shape, an irregular shape, etc. The display area (DA) may have a rounded corner shape at the edge.

[0091] The display device (10) of FIG. 1 is a device that displays a moving image or a still image, and can be used in portable electronic devices such as a laptop, a tablet personal computer (PC), a mobile phone, a smart phone, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, an Ultra Mobile PC (UMPC), etc. Alternatively, the display device (10) can be used in electronic devices for a television, a monitor, a billboard, an internet of things (IOT), or a wearable electronic device such as a smart watch, a watch phone, a glasses-type display, and a head mounted display (HMD). In addition, the display device (10) according to one embodiment can be used in an electronic device for displaying an instrument panel of a vehicle, a CID (Center Information Display) located (arranged) on a center fascia or dashboard of a vehicle, a room mirror display replacing a side mirror of a vehicle, and an entertainment device for the rear seat of a vehicle, which is arranged on the back of the front seat.

[0092] FIG. 2 is a schematic cross-sectional view showing a part of a display device (10) according to one embodiment of the present invention.

[0093] Referring to FIG. 2, the display device (10) may include a substrate (100), pixel circuits (PC) arranged on the substrate (100), and light-emitting diodes electrically connected to each of the pixel circuits (PC). In this regard, FIG. 2 illustrates first and second light-emitting diodes (LED1, LED2).

[0094] The substrate (100) may include a glass material or a polymer resin. As an example, the substrate (100) may have an alternating laminated structure of a base layer including a polymer resin and a barrier layer including an inorganic insulating material such as silicon oxide or silicon nitride. The polymer resin may include a polymer resin such as polyethersulfone, polyarylate, polyether imide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, etc.

[0095] The pixel circuit (PC) may include transistors and capacitors, and in this regard, FIG. 2 illustrates a first transistor (T1), a first capacitor (C1), and a second capacitor (C2). The pixel circuit (PC) may include conductive layers and semiconductor layers constituting the aforementioned transistors or capacitors.

[0096] A first conductive layer (CL1) may be disposed on a substrate (100). The first conductive layer (CL1) may include a conductive material such as a metal. For example, the first conductive layer (CL1) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may include a single-layer or multi-layer structure including the aforementioned materials.

[0097] The buffer layer (111) may be disposed on the first conductive layer (CL1). The buffer layer (111) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0098] The second conductive layer (CL2) is disposed on the buffer layer (111) and may overlap the first conductive layer (CL1). In one embodiment, the first conductive layer (CL1) may include a first electrode (C21) of the second capacitor (C2), and the second conductive layer (CL2) may include a second electrode (C22) of the second capacitor (C2). The second conductive layer (CL2) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a single-layer or multi-layer structure including the aforementioned material.

[0099] The first insulating layer (112) may be disposed on the second conductive layer (CL2). The first insulating layer (112) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0100] The semiconductor layer (ACT1) may be disposed on the first insulating layer (112). The semiconductor layer (ACT1) may include a channel region (CH1), and a source region (S1) and a drain region (D1) disposed on both sides of the aforementioned channel region (CH1). The semiconductor layer (ACT1) may include an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). For example, the semiconductor layer (ACT1) may be an ITZO (InSnZnO) semiconductor layer, an IGZO (InGaZnO) semiconductor layer, etc. A conductive (or conductive) process such as plasma treatment may be performed on at least a portion of the semiconductor layer (ACT1).

[0101] The third conductive layer (CL3) may be disposed on the semiconductor layer (ACT1) with the second insulating layer (113) therebetween. A portion of the third conductive layer (CL3) may include a first-first gate electrode (G11) overlapping the channel region (CH1), and a portion of the second conductive layer (CL2) may include a first-second gate electrode (G12) overlapping the channel region (CH1). The first-first gate electrode (G11) and the first-second gate electrode (G12) may overlap each other with the channel region (CH1) therebetween. The second insulating layer (113) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0102] The third insulating layer (114) may be disposed on the third conductive layer (CL3). The third insulating layer (114) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0103] The third conductive layer (CL3) may include the first electrode (C11) of the first capacitor (C1), and the fourth conductive layer (CL4) on the third insulating layer (114) may include the second electrode (C12) of the first capacitor (C1). The third conductive layer (CL3) and the fourth conductive layer (CL4) may each include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a single-layer or multi-layer structure including the aforementioned materials.

[0104] The data line (DL) may be arranged on the third insulating layer (114). The data line (DL) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may include a single-layer or multi-layer structure including the aforementioned materials.

[0105] The fourth insulating layer (116) may be placed on the data line (DL). The fourth insulating layer (116) may include an organic insulating material such as acrylic, BCB (Benzocyclobutene), polyimide, or HMDSO (Hexamethyldisiloxane).

[0106] The driving voltage line (PL) may be arranged on the fourth insulating layer (116) and covered with a fifth insulating layer (117). The driving voltage line (PL) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may include a single-layer or multi-layer structure including the aforementioned materials. The fifth insulating layer (117) may include an organic insulating material.

[0107] A light emitting diode may include a pixel electrode, a counter electrode, and an intermediate layer interposed therebetween. For example, a first light emitting diode (LED1) may have a laminated structure of a first pixel electrode (200A), an intermediate layer (220), and a counter electrode (230), and a second light emitting diode (LED2) may have a laminated structure of a second pixel electrode (200B), an intermediate layer (220), and a counter electrode (230).

[0108] The first pixel electrode (200A) and the second pixel electrode (200B) may be spaced apart from each other and disposed on the fifth insulating layer (117). The first pixel electrode (200A) and the second pixel electrode (200B) may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof. In one embodiment, the first pixel electrode (200A) and the second pixel electrode (200B) may further include a conductive oxide layer on and / or below the aforementioned reflective film.

[0109] The bank layer (123) may be disposed on the first pixel electrode (200A) and the second pixel electrode (200B). The bank layer (123) may include a first opening (123OP1) and a second opening (123OP2) overlapping the first pixel electrode (200A) and the second pixel electrode (200B), respectively. The bank layer (123) may include an organic insulating material. For example, the bank layer (123) may include an organic insulating material including a light-blocking material. In one embodiment, the bank layer (123) may include a polyimide (PI)-based binder and a pigment mixed with red, green, and blue. For example, the bank layer (123) may include a cardo-based binder resin and a mixture of a lactam black pigment and a blue pigment. For example, the bank layer (123) may include carbon black. The bank layer (123) may improve the contrast of the display device (10).

[0110] The bank layer (123) may include an overhang portion (123P) disposed on the upper surface (e.g., above) of each of the first pixel electrode (200A) and the second pixel electrode (200B). Each overhang portion (123P) may overlap an outer portion of each of the first pixel electrode (200A) and the second pixel electrode (200B). In other words, an inner portion of the first pixel electrode (200A) may overlap the first opening (123OP1), and an outer portion of the first pixel electrode (200A) may overlap the overhang portion (123P). The overhang portion (123P) overlapping the first pixel electrode (200A) can be spaced apart from the upper surface of the first pixel electrode (200A) along a direction perpendicular to the upper surface of the first pixel electrode (200A) (e.g., z direction). The inner portion of the second pixel electrode (200B) can overlap the second opening (123OP2), and the edge portion of the second pixel electrode (200B) can overlap the overhang portion (123P). The overhang portion (123P) overlapping the second pixel electrode (200B) can be spaced apart from the upper surface of the second pixel electrode (200B) along a direction perpendicular to the upper surface of the second pixel electrode (200B) (e.g., z direction).

[0111] The first protective layer (125A) and the second protective layer (125B) may be disposed on the first pixel electrode (200A) and the second pixel electrode (200B), respectively. The first protective layer (125A) and the second protective layer (125B) may be disposed on the edge portions of the first pixel electrode (200A) and the second pixel electrode (200B), respectively, and may have a closed loop shape (or frame shape) on a plane.

[0112] The first protective layer (125A) may be disposed between the first pixel electrode (200A) and the overhang portion (123P) overlapping the first pixel electrode (200A), and the second protective layer (125B) may be disposed between the second pixel electrode (200B) and the overhang portion (123P) overlapping the second pixel electrode (200B).

[0113] The first protective layer (125A) and the second protective layer (125B) may include a metal oxide. Each of the first protective layer (125A) and the second protective layer (125B) may include zinc oxide (ZnO). For example, each of the first protective layer (125A) and the second protective layer (125B) may include the aforementioned zinc oxide and at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO). The content (at%) of at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO) included in each of the first protective layer (125A) and the second protective layer (125B) may be less than the content (at%) of zinc oxide.

[0114] The overhang portion (123P) of the bank layer (123) disposed on the first pixel electrode (200A) may further extend toward the inner portion of the first pixel electrode (200A) past the first protective layer (125A) in the horizontal direction (e.g., in the x or y direction). A void (or gap, space) may be located under the overhang portion (123P). Similarly, the overhang portion (123P) of the bank layer (123) disposed on the second pixel electrode (200B) may further extend toward the inner portion of the second pixel electrode (200B) past the second protective layer (125B) in the horizontal direction (e.g., in the x or y direction), and a void (or gap, space) may be located under the second pixel electrode (200B) and the overhang portion (123P).

[0115] The intermediate layer (220) may include a plurality of sub-layers. At least one of the plurality of sub-layers may be separated with the overhang (123P) as the center. In one embodiment, FIG. 2 illustrates that among the sub-layers included in the intermediate layer (220), the sub-layers (221) arranged relatively lower are separated with the overhang (123P) as the center, and the sub-layers (222) arranged relatively upper are continuously extended without being separated around the overhang (123P). The sub-layers (221) arranged lower may include a first portion and a second portion separated with the overhang (123P) as the center, and one of the first portion and the second portion may be arranged on the upper surface of the first or second pixel electrode (200A, 200B), and the other may be arranged on the overhang (123P).

[0116] The counter electrode (230) may be disposed on the intermediate layer (220). The counter electrode (230) may be formed continuously without being separated around the overhang (123P). In other words, the counter electrode (230) may be shared by light-emitting diodes, for example, the first and second light-emitting diodes (LED1, LED2). The counter electrode (230) may overlap pixel electrodes, for example, the first and second pixel electrodes (200A, 200B).

[0117] The counter electrode (230) may be formed of a conductive material having a low work function. The counter electrode (230) may include a (semi-)transparent layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Alternatively, the counter electrode (230) may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer including the aforementioned material.

[0118] The upper layer (240) can be formed continuously similarly to the counter electrode (230). The upper layer (240) can overlap a plurality of light-emitting diodes, for example, the first and second light-emitting diodes (LED1, LED2). The upper layer (240) can include a LiF layer and / or a capping layer, and the capping layer can be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material. The capping layer can include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The above carbocyclic compounds, heterocyclic compounds and amine group-containing compounds may optionally be substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0119] Although not illustrated in FIG. 2, the light emitting diodes, for example, the first and second light emitting diodes (LED1, LED2), may be protected by an encapsulation layer. The encapsulation layer may include at least one inorganic encapsulation layer including an inorganic insulating material and at least one organic encapsulation layer including an organic insulating material. In one embodiment, the encapsulation layer may include a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer.

[0120] Fig. 3 is a schematic cross-sectional view showing part III of Fig. 2 in an enlarged manner. Although Fig. 3 illustrates the first pixel electrode (200A) and the structure above the first pixel electrode (200A), the structure described with reference to Fig. 3 can be equally applied to other pixel electrodes and the structure above them, for example, the second pixel electrode (200B) and the structure above the second pixel electrode (200B).

[0121] Referring to FIG. 3, a first pixel electrode (200A) may be placed on an insulating layer, for example, a fifth insulating layer (117), and a first protective layer (125A) may be placed on an edge portion of the first pixel electrode (200A).

[0122] The overhang portion (123P) of the bank layer (123) may be positioned to overlap with an end portion, for example, an edge portion, of the first pixel electrode (200A). A first protective layer (125A) is interposed between the overhang portion (123P) and the first pixel electrode (200A), and the overhang portion (123P) may extend in a horizontal direction (e.g., x or y direction) past the first protective layer (125A), and a void (VD, or gap, space) may be positioned between the first pixel electrode (200A) and the overhang portion (123P).

[0123] The horizontal length (L) of the overhang (123P) may be greater than the vertical distance (H) of the overhang (123P). Here, the horizontal length (L) of the overhang (123P) represents the length in the horizontal direction (e.g., x or y direction) from the point where the first side surface (125S1), which is the inner surface of the first protective layer (125A), and the bottom surface of the first protective layer (125A) meet (hereinafter, the first edge, E1) to the edge of the overhang (123P). The vertical distance (H) of the overhang (123P) represents the length in the vertical direction (e.g., z direction) from the upper surface of the first pixel electrode (200A) to the bottom surface of the overhang (123P).

[0124] In one embodiment, the horizontal length (L) of the overhang (123P) may be in a range of about 100 nm to 900 nm, and the vertical distance (H) from the upper surface of the first pixel electrode (200A) to the overhang (123P) may be in a range of about 10 nm to 900 nm. In one embodiment, the vertical distance (H) to the overhang (123P) may be in a range of about 10 nm to 90 nm. In one embodiment, the horizontal length (L) of the overhang (123P) may be about 2 to 10 times the vertical distance (H) (2H ≤ L ≤ 10H). In one embodiment, the horizontal length (L) of the overhang (123P) may be about 500 nm, and the vertical distance (H) may be about 50 nm.

[0125] The first protective layer (125A) may include a first side (125S1) facing inward and a second side (125S2) opposite the first side (125S1). The second side (125S2) of the first protective layer (125A) may be spaced apart from the side (200S) of the first pixel electrode (200A) by a first distance (d1) along the horizontal direction (e.g., x or y direction).

[0126] The second side surface (125S2) of the first protective layer (125A) can meet the upper surface of the first pixel electrode (200A). The point where the second side surface (125S2) of the first protective layer (125A) and the bottom surface of the first protective layer (125A) (or the upper surface of the first pixel electrode (200A)) meet (e.g., the second edge, E2) can be spaced apart from the point where the upper surface and the side surface (200S) of the first pixel electrode (200A) meet (hereinafter, the third edge, E3) by a first distance (d1).

[0127] The first inclination angle (α) of the second side surface (125S2) of the first protective layer (125A) may be the same as or different from the second inclination angle (β) of the side surface (200S) of the first pixel electrode (200A). In one embodiment, the first inclination angle (α) formed by the second side surface (125S2) of the first protective layer (125A) with respect to the bottom surface of the first protective layer (125A) (or the top surface of the first pixel electrode (200A)) may be about 45° to about 60°. The second inclination angle (β) formed by the side surface of the first pixel electrode (200A) with respect to the bottom surface of the first pixel electrode (200A) (or the top surface of the fifth insulating layer (117)) may be about 45° to about 60°.

[0128] The intermediate layer (220) may have a tandem structure including a charge generation layer (2150), lower sublayers (2100) below the charge generation layer (2150), and upper sublayers (2200) above the charge generation layer (2150).

[0129] The lower sublayers (2100) may include a first lower common layer (2111), a lower functional layer (2112), and a second lower common layer (2113).

[0130] The first lower common layer (2111) may include a hole transport layer (HTL) or may include a hole transport layer and a hole injection layer (HIL). The second lower common layer (2113) may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0131] The lower functional layer (2112) may include an emission layer, or may be a multilayer structure including an emission layer and an auxiliary layer. The emission layer may include a polymer or a low-molecular organic material that emits light of a predetermined color (e.g., red, green, or blue). The auxiliary layer may serve to increase device efficiency by compensating for the optical resonance distance of light emitted from the emission layer. The auxiliary layer may include a resonance-assisting material, for example, the same material as the hole transport layer. In one embodiment, the thickness of the lower functional layer (2112) may be greater than the thickness of the first lower common layer (2111) and / or the thickness of the second lower common layer (2113). The thickness of the first lower common layer (2111) may be greater than the thickness of the second lower common layer (2113).

[0132] The lower functional layer (2112) can be formed using a mask having openings corresponding to the light-emitting diodes, so that the lower functional layer (2112) of each light-emitting diode can be separated and spaced from the lower functional layer of another adjacent light-emitting diode.

[0133] In one embodiment, the first lower common layer (2111) and / or the second lower common layer (2113) may be formed using a mask having an opening substantially equal to the entire area of ​​the display area (DA). In this case, the second lower common layer (2113) may be in direct contact with the first lower common layer (2111) around the end of the lower functional layer (2112). The contact area of ​​the second lower common layer (2113) and the first lower common layer (2111) may be located on the upper surface of the bank layer (123). In one embodiment, one or at least one layer included in the second lower common layer (2113) may be formed using a mask having openings corresponding to the light-emitting diodes, similar to the lower functional layer (2112).

[0134] The upper sublayers (2200) may include a first upper common layer (2221), an upper functional layer (2222), and a second upper common layer (2223).

[0135] The first upper common layer (2221) may include a hole transport layer (HTL) or may include a hole transport layer and a hole injection layer (HIL). The second upper common layer (2223) may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0136] The upper functional layer (2222) may include an emission layer, or may be a multilayer structure including an emission layer and an auxiliary layer. The emission layer may include a polymer or a low-molecular organic material that emits light of a predetermined color (e.g., red, green, or blue). The auxiliary layer may serve to increase device efficiency by compensating for the optical resonance distance of light emitted from the emission layer. The auxiliary layer may include a resonance-assisting material, for example, the same material as the hole transport layer. The emission layer of the upper functional layer (2222) may emit light of the same color as the emission layer of the lower functional layer (2112) and may include the same material as the emission layer of the lower functional layer (2112). In one embodiment, the thickness of the upper functional layer (2222) may be greater than the thickness of the first upper common layer (2221) and / or the thickness of the second upper common layer (2223). In one embodiment, the thickness of the upper functional layer (2222) may be smaller than the thickness of the first upper common layer (2221) and larger than the thickness of the second upper common layer (2223). The thickness of the second upper common layer (2223) may be smaller than the thickness of the first upper common layer (2221). In one embodiment, the thickness of the first upper common layer (2221) may be larger than the thickness of the first lower common layer (2111). The thickness of the second upper common layer (2223) may be larger than the thickness of the second lower common layer (2113).

[0137] The upper functional layer (2222) can be formed individually according to the corresponding light-emitting diode. In other words, the upper functional layer (2222) of each light-emitting diode can be separated and spaced from the upper functional layer of another adjacent light-emitting diode.

[0138] In one embodiment, the first upper common layer (2221) and the second upper common layer (2223) may be formed using a mask having an opening substantially equal to the entire area of ​​the display area (DA). In this case, the second upper common layer (2223) may be in direct contact with the first upper common layer (2221) around the end of the upper functional layer (2222). The contact area of ​​the second upper common layer (2223) and the first upper common layer (2221) may be located on the upper surface of the bank layer (123). In one embodiment, one or at least one layer included in the first upper common layer (2221) may be formed individually according to the light-emitting diode.

[0139] The charge generation layer (2150) may be disposed between the second lower common layer (2113) and the first upper common layer (2221). The charge generation layer (2150) may include a host and a dopant.

[0140] In one embodiment, the charge generation layer (2150) may have a bilayer structure including an N-type sub-charge generation layer (nCGL) and a P-type sub-charge generation layer (pCGL). The N-type sub-charge generation layer and the P-type sub-charge generation layer can further increase the light-emitting efficiency of a tandem light-emitting diode having a plurality of light-emitting layers.

[0141] The N-type sub-charge generation layer may include an N-type dopant material and an N-type host material. The N-type dopant material may be a metal of Group 1 or Group 2 of the periodic table, an organic material capable of injecting electrons, or a mixture thereof. For example, the N-type dopant material may be any one of an alkali metal and an alkaline earth metal. For example, the N-type sub-charge generation layer may be formed of an organic layer doped with an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), or an alkaline earth metal such as magnesium (Mg), strontium (Sr), barium (Ba), or radium (Ra), but the present invention is not limited thereto. The N-type host material is a material capable of transferring electrons, such as Alq3(tris(8-hydroxyquinolino)aluminum), Liq(8-hydroxyquinolinolato-lithium), PBD(2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4oxadiazole), TAZ(3-(4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, and BAlq(bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium), SAlq, TPBi(2,2',2-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), oxadiazole, triazole, phenanthroline, benzoxazole or It may be composed of one or more of benzthiazole, and the present invention is not limited thereto.

[0142] The P-type sub-charge generation layer may include a P-type dopant material and a P-type host material. The P-type dopant material may be made of, but is not limited to, an organic material such as a metal oxide, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ), HAT-CN (Hexaazatriphenylene-hexacarbonitrile), hexaazatriphenylene, or a metal material such as V2O5, MoOx, WO3, or the like. The P-type host material may be formed of a material capable of transmitting holes, for example, a material including at least one of NPD (N,N-dinaphthyl-N,N'-diphenyl benzidine) (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), and MTDATA (4,4',4-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine), but the present invention is not limited thereto.

[0143] Some of the sub-layers included in the intermediate layer (220), for example, the charge generation layer (2150) and the lower sub-layers (2100) below the charge generation layer (2150), may include portions separated around the overhang (123P). The charge generation layer (2150) and the lower sub-layers (2100) may correspond to the sub-layers (221) arranged relatively lower among the intermediate layer (220) described above with reference to FIG. 2.

[0144] A first portion of each of the first lower common layer (2111), the lower functional layer (2112), the second lower common layer (2113), and the charge generation layer (2150) may be disposed on the first pixel electrode (200A) through the first opening (123OP1). A second portion of each of the first lower common layer (2111), the lower functional layer (2112), the second lower common layer (2113), and the charge generation layer (2150), which is separated from the first portion described above, may be disposed on the bank layer (123), for example, on the overhang portion (123P).

[0145] In one embodiment, the sum total (T) of the thicknesses of the first lower common layer (2111), the lower functional layer (2112), the second lower common layer (2113), and the charge generation layer (2150) may be greater than the vertical distance (H) of the overhang (123P).

[0146] Among the sub-layers included in the intermediate layer (220), the remaining ones, for example, the first upper common layer (2221), the upper functional layer (2222), and the second upper common layer (2223), may be formed continuously without separation with the overhang (123P) as the center. The upper sub-layers (2200) illustrated in FIG. 3 may correspond to the sub-layers (222) arranged relatively higher among the intermediate layer (220) described above with reference to FIG. 2.

[0147] Although FIG. 3 illustrates that the first upper common layer (2221), the upper functional layer (2222), and the second upper common layer (2223) are formed sequentially, the present invention is not limited thereto. In one embodiment, at least one selected from the first upper common layer (2221), the upper functional layer (2222), and the second upper common layer (2223) may be separated around the overhang (123P) similarly to the charge generation layer (2150).

[0148] The counter electrode (230) and the upper layer (240) can be formed continuously without being separated, respectively, with the overhang (123P) as the center.

[0149] Figure 4 is a schematic cross-sectional view showing an enlarged portion of section IV of Figure 3.

[0150] Referring to FIG. 4, the first pixel electrode (200A) may have a multilayer structure. For example, the first pixel electrode (200A) may have a three-layer structure of a first layer (201), a second layer (202), and a third layer (203). The material of the second layer (202) may be different from the material of the first layer (201) and the material of the third layer (203).

[0151] In one embodiment, the second layer (202) may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. The first layer (201) and the third layer (203) may include conductive oxides. The conductive oxides may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In one embodiment, the second layer (202) of the first pixel electrode (200A) may be a layer containing silver (Ag), and the first layer (201) and the third layer (203) may be layers containing ITO.

[0152] The inclination angle (β2) of the side surface of the second layer (202) may be different from at least one selected from the inclination angle (β1) of the side surface of the first layer (201) and the inclination angle (β3) of the side surface of the third layer (203). For example, the inclination angle (β2) that the side surface of the second layer (202) forms with respect to the bottom surface of the second layer (202) may be greater than the inclination angle (β1) that the side surface of the first layer (201) forms with respect to the bottom surface of the first layer (201) and / or the inclination angle (β3) that the side surface of the third layer (203) forms with respect to the bottom surface of the third layer (203).

[0153] The side surface (200S) of the first pixel electrode (200A) described above with reference to FIG. 3 may correspond to a surface connecting the edge (e.g., fourth edge, E4) where the bottom surface and the side surface of the first layer (201) shown in FIG. 4 meet and the edge (e.g., third edge, E3) where the top surface and the side surface of the third layer (203) meet.

[0154] The first protective layer (125A) is positioned on the upper surface of the first pixel electrode (200A), but as previously described with reference to FIGS. 2 and 3, the second edge (E2), which is the point where the second side (125S2) of the first protective layer (125A) and the upper surface of the first pixel electrode (200A) meet, can be spaced apart from the third edge (E3) described above by a first distance (d1).

[0155] The structure of the first pixel electrode (200A) described with reference to Fig. 4 can be applied equally to other pixel electrodes. For example, the second pixel electrode (200B) can also have a three-layer structure as described with reference to Fig. 4.

[0156] FIG. 5a is a schematic cross-sectional view schematically illustrating a display device according to one embodiment of the present invention, and FIG. 5b is a schematic cross-sectional view enlarged to illustrate part V of FIG. 5a.

[0157] The display device (10) according to the embodiment illustrated in FIG. 5A illustrates that the first protective layer (125A) and the second protective layer (125B) extend onto the upper surface of the fifth insulating layer (117) while overlapping the side surfaces of the first pixel electrode (200A) and the second pixel electrode (200B), respectively. The structures other than the structures of the first protective layer (125A) and the second protective layer (125B) are the same as those described above with reference to FIGS. 2 and 3, and therefore, a repeated description may be omitted, and the following description will focus on the differences.

[0158] The first protective layer (125A) is positioned on the edge portion of the first pixel electrode (200A), and may extend past the side surface of the first pixel electrode (200A) to the upper surface of the fifth insulating layer (117). Therefore, the first protective layer (125A) may be in direct contact with the side surface of the first pixel electrode (200A) and the upper surface of the fifth insulating layer (117). Similarly, the second protective layer (125B) is positioned on the edge portion of the second pixel electrode (200B), and may extend past the side surface of the second pixel electrode (200B) to the upper surface of the fifth insulating layer (117). Therefore, the second protective layer (125B) may be in direct contact with the side surface of the second pixel electrode (200B) and the upper surface of the fifth insulating layer (117). The first protective layer (125A) and the second protective layer (125B) may be spaced apart from each other.

[0159] Referring to FIG. 5b, the first protective layer (125A) can continuously overlap a portion of the upper surface corresponding to the edge portion of the first pixel electrode (200A), the side surface (200S) of the first pixel electrode (200A), and the upper surface of the fifth insulating layer (117). The first protective layer (125A) can directly contact a portion of the upper surface corresponding to the edge portion of the first pixel electrode (200A), the side surface (200S) of the first pixel electrode (200A), and the upper surface of the fifth insulating layer (117).

[0160] The second side surface (125S2), which is the outer surface of the first protective layer (125A), may be spaced apart from the side surface (200S) of the first pixel electrode (200A). The point (or second edge, E2) where the second side surface (125S2) of the first protective layer (125A) and the bottom surface (or the upper surface of the fifth insulating layer (117)) of the first protective layer (125A) meet may be spaced apart from the side surface (200S) of the first pixel electrode (200A) by a second distance (d2). For example, the point (or second edge, E2) where the second side surface (125S2) of the first protective layer (125A) and the bottom surface (or the top surface of the fifth insulating layer (117)) of the first protective layer (125A) meet may be spaced apart from the point (e.g., fourth edge, E4) where the side surface (200S) and the bottom surface of the first pixel electrode (200A) meet by a second distance (d2) in the horizontal direction (e.g., x or y direction).

[0161] The first inclination angle (α) between the second side surface (125S2) of the first protective layer (125A) and the bottom surface (or the top surface of the fifth insulating layer (117)) of the first protective layer (125A) may be about 45˚ to about 60˚.

[0162] The first pixel electrode (200A) may include first to third layers (201, 202, 203) as illustrated in FIG. 5b, and the specific materials thereof may be as described above with reference to FIG. 4. As illustrated in FIG. 5b, the first protective layer (125A) may be in direct contact with the side surfaces of each of the first to third layers (201, 202, 203). The structure described with reference to FIG. 5b may correspond to other protective layers and pixel electrodes.

[0163] FIGS. 6 to 10 are schematic cross-sectional views schematically illustrating a process for forming a display device according to one embodiment of the present invention.

[0164] Referring to Fig. 6, pixel circuits (PC) are formed on a substrate (100). The substrate (100), the specific structure of the pixel circuit (PC), the buffer layer (111), and the first to fifth insulating layers (111, 112, 113, 114, 116, 117) may be as described above with reference to Fig. 2.

[0165] A first pixel electrode (200A) and a second pixel electrode (200B) can be formed on the fifth insulating layer (117). The first pixel electrode (200A) and the second pixel electrode (200B) can be arranged to be spaced apart from each other, and each of the first pixel electrode (200A) and the second pixel electrode (200B) can be electrically connected to a pixel circuit (PC).

[0166] Each of the first pixel electrode (200A) and the second pixel electrode (200B) may include a metal film and a conductive oxide film disposed above and below the metal film, respectively. The metal film may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. The conductive oxide film may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In one embodiment, each of the first pixel electrode (200A) and the second pixel electrode (200B) may have a three-layer structure in which an indium tin oxide (ITO) layer, a silver (Ag) layer, and an indium tin oxide (ITO) layer are stacked.

[0167] A pre-protective layer (1125) is formed on the first pixel electrode (200A) and the second pixel electrode (200B). The pre-protective layer (1125) may include a metal oxide. In one embodiment, the pre-protective layer (1125) may include zinc oxide (ZnO). For example, the pre-protective layer (1125) may include zinc oxide and at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO). The content (at%) of at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO) included in the pre-protective layer (1125) may be less than the content (at%) of zinc oxide included in the pre-protective layer (1125). In other words, the content (at%) of zinc oxide included in the pre-protective layer (1125) may be greater than the content of other metal oxides.

[0168] Photoresists (PR) are formed on the pre-protection layer (1125). The photoresists (PR) may overlap the first pixel electrode (200A) and the second pixel electrode (200B), respectively. In one embodiment, the width of the photoresist (PR) may be smaller than the width of the pixel electrode disposed under the corresponding photoresist (PR).

[0169] A portion of the pre-protective layer (1125) that does not overlap with the photoresist (PR) can be removed. A portion of the pre-protective layer (1125) can be removed through etching (e.g., wet etching). As a portion of the pre-protective layer (1125) is removed, a protective layer can be formed on each pixel electrode. In this regard, FIG. 7 illustrates that a first protective layer (125A) is formed on a first pixel electrode (200A), and a second protective layer (125B) is formed on a second pixel electrode (200B). The first stacked structure of the first pixel electrode (200A) and the first protective layer (125A), and the second stacked structure of the second pixel electrode (200B) and the second protective layer (125B) can be spaced apart from each other. The width of the first protective layer (125A) may be smaller than the width of the upper surface of the first pixel electrode (200A), and the width of the second protective layer (125B) may be smaller than the width of the upper surface of the second pixel electrode (200B).

[0170] As shown in the enlarged view of Fig. 7, the second edge (E2) where the second side surface (125S2) and the bottom surface of the first protective layer (125A) meet can be spaced apart from the third edge (E3) where the top surface and the side surface (200S) of the first pixel electrode (200A) meet by a first distance (d1) in the horizontal direction (e.g., x or y direction).

[0171] The first inclination angle (α) of the second side surface (125S2) of the first protective layer (125A) and the second inclination angle (β) of the side surface (200S) of the first pixel electrode (200A) may be the same as or different from each other. The first inclination angle (α) formed by the second side surface (125S2) of the first protective layer (125A) with respect to the bottom surface of the first protective layer (125A), and / or the second inclination angle (β) formed by the side surface (200S) of the first pixel electrode (200A) with respect to the bottom surface (or the top surface of the fifth insulating layer (117)) of the first pixel electrode (200A) may be about 45° to about 60°.

[0172] The first pixel electrode (200A) may include a plurality of layers, for example, first to third layers (201, 202, 203, FIG. 4), as previously described with reference to FIG. 4, and specific characteristics of the first to third layers (201, 202, 203, FIG. 4) may be the same as those previously described with reference to FIG. 4.

[0173] The second stacked structure of the second pixel electrode (200B) and the second protective layer (125B) is identical to the first stacked structure of the first pixel electrode (200A) and the first protective layer (125A), and therefore, a repeated description may be omitted.

[0174] Referring to FIG. 8, a bank layer (123) may be formed to cover each side of the first stacked structure and the second stacked structure described above. The bank layer (123) may be in direct contact with the second side (125S2, FIG. 7) of the first protective layer (125A) corresponding to the first stacked structure and the side (200S, FIG. 7) of the first pixel electrode (200A). Similarly, the bank layer (123) may be in direct contact with the second side of the second protective layer (125B) corresponding to the second stacked structure and the side of the second pixel electrode (200B).

[0175] The bank layer (123) may have an opening overlapping with the pixel electrode. In this regard, in FIG. 8, the bank layer (123) may include a first opening (123OP1) overlapping with the first pixel electrode (200A), and a second opening (123OP2) overlapping with the second pixel electrode (200B).

[0176] The bank layer (123) may include an organic insulating material, such as an organic insulating material including a light-shielding material. In one embodiment, the bank layer (123) may include a polyimide (PI)-based binder and a pigment mixed with red, green, and blue. For example, the bank layer (123) may include a cardo-based binder resin and a mixture of a lactam-based black pigment and a blue pigment. For example, the bank layer (123) may include carbon black.

[0177] After forming the bank layer (123), a portion of the protective layer can be removed through an opening in the bank layer (123). A portion of the first protective layer (125A) can be removed through the first opening (123OP1), and a portion of the second protective layer (125B) can be removed through the second opening (123OP2). As a portion of the first protective layer (125A) and a portion of the second protective layer (125B) are removed, each of the first protective layer (125A) and the second protective layer (125B) can have a closed loop shape (or a frame shape) on a plane.

[0178] A portion of the first protective layer (125A) and a portion of the second protective layer (125B) may be removed through etching (e.g., wet etching). The area of ​​the removed portion of the first protective layer (125A) may be larger than the area of ​​the first opening (123OP1), and the area of ​​the removed portion of the second protective layer (125B) may be larger than the area of ​​the second opening (123OP2). In other words, the first protective layer (125A) may be removed up to the portion overlapping the first opening (123OP1) and the surrounding portion thereof, and the second protective layer (125B) may be removed up to the portion overlapping the second opening (123OP2) and the surrounding portion thereof. Accordingly, the bank layer (123) may include an overhang portion (123P) as illustrated in FIG. 9.

[0179] Referring to FIG. 9, the overhang portion (123P) can overlap the edge portions of each of the first pixel electrode (200A) and the second pixel electrode (200B), and the characteristics of the horizontal distance and vertical distance of the overhang portion (123P) are as described above with reference to FIG. 3.

[0180] Referring to Fig. 10, an intermediate layer (220), a counter electrode (230), and an upper layer (240) can be formed on a bank layer (123) including an overhang portion (123P). Each of the intermediate layer (220), the counter electrode (230), and the upper layer (240) can be formed through a chemical vapor deposition method.

[0181] The intermediate layer (220) may include multiple sublayers. Some or all of the multiple sublayers may be separated around the overhang (123P). In one embodiment, FIG. 10 illustrates that some of the sublayers (221) included in the intermediate layer (220) are separated around the overhang (123P), and the remaining sublayers (222) included in the intermediate layer (220) are formed continuously. The specific structure of the intermediate layer (220) is the same as that described above with reference to FIG. 3 , and thus, a repeated description may be omitted.

[0182] The counter electrode (230) and the upper layer (240) can be formed continuously without being separated, centered on the overhang (123P).

[0183] According to the embodiment described with reference to FIGS. 5 to 10, the photoresist (PR) illustrated in FIG. 6 is formed to be smaller than the width of the pixel electrode, and thus the first protective layer (125A) is positioned on the first pixel electrode (200A), and the second edge (E2) of the side surface of the first protective layer (125A) is spaced apart from the third edge (E3) of the side surface of the first pixel electrode (200A) by a first distance (d1), but the present invention is not limited thereto. The width of the photoresist (PR) may be changed as in the process described below with reference to FIGS. 11A to 11D.

[0184] Figures 11a to 11d are schematic cross-sectional views showing the process of a method for manufacturing a display device according to one embodiment of the present invention. Figures 11a to 11d are schematic cross-sectional views showing the process of forming a first stacked structure including a first pixel electrode (200A) and a first protective layer (125A) on the first pixel electrode (200A), a second stacked structure including a second pixel electrode (200B) and a second protective layer (125B) on the second pixel electrode (200B), and a process of forming a bank layer (123) having an overhang (123P).

[0185] Referring to FIG. 11A, a first pixel electrode (200A) and a second pixel electrode (200B) that are spaced apart from each other can be formed, and a pre-protection layer (1125) can be formed on the first pixel electrode (200A) and the second pixel electrode (200B).

[0186] For patterning of the pre-protection layer (1125), the width of each photoresist (PR) placed on the pre-protection layer (1125) may be greater than the width of the pixel electrode placed under the corresponding photoresist (PR).

[0187] A portion of the pre-protective layer (1125) that does not overlap with the photoresist (PR) can be removed. As a portion of the pre-protective layer (1125) is removed, a first protective layer (125A) and a second protective layer (125B) can be formed on the first pixel electrode (200A) and the second pixel electrode (200B), respectively, as illustrated in FIG. 11B.

[0188] Referring to FIG. 11B, the width of the first protective layer (125A) may be larger than the width of the first pixel electrode (200A), and the width of the second protective layer (125B) may be larger than the width of the second pixel electrode (200B). The first protective layer (125A) may extend past the side surface of the first pixel electrode (200A) onto the fifth insulating layer (117), and the second protective layer (125B) may extend past the side surface of the second pixel electrode (200B) onto the fifth insulating layer (117).

[0189] Referring to FIG. 11C, a bank layer (123) may be formed to cover each side of the first stacked structure of the first pixel electrode (200A) and the first protective layer (125A), and the second stacked structure of the second pixel electrode (200B) and the second protective layer (125B). The bank layer (123) may have a first opening (123OP1) overlapping the first pixel electrode (200A), and a second opening (123OP2) overlapping the second pixel electrode (200B).

[0190] A portion of the first protective layer (125A) can be removed through the first opening (123OP1) of the bank layer (123), and a portion of the second protective layer (125B) can be removed through the second opening (123OP2). A portion of the first protective layer (125A) and a portion of the second protective layer (125B) can be removed through etching (e.g., wet etching). The area of ​​the removed portion of the first protective layer (125A) may be larger than the area of ​​the first opening (123OP1), and the area of ​​the removed portion of the second protective layer (125B) may be larger than the area of ​​the second opening (123OP2). In other words, the first protective layer (125A) can be removed up to the portion overlapping the first opening (123OP1) and its surrounding portion, and the second protective layer (125B) can be removed up to the portion overlapping the second opening (123OP2) and its surrounding portion. Accordingly, the bank layer (123) can include an overhang portion (123P) as illustrated in FIG. 11D.

[0191] After forming a bank layer (123) having an overhang (123P) as shown in Fig. 11d, an intermediate layer, a counter electrode, and an upper layer can be formed sequentially, and the structure thereof is as described with reference to Figs. 5a and 5b.

[0192] According to the embodiments described with reference to FIGS. 6 to 10 and 11A to 11D, the first and second pixel electrodes (200A, 200B) are formed, and the first and second protective layers (125A, 125B) are formed, but the present invention is not limited thereto. As described below with reference to FIGS. 12A to 12D, the first and second protective layers (125A, 125B) can be patterned, and the first and second pixel electrodes (200A, 200B) can be formed.

[0193] Figures 12a to 12d illustrate processes of a method for manufacturing a display device according to one embodiment of the present invention. For example, Figures 12a to 12d are schematic cross-sectional views illustrating processes for forming a protective layer and a pixel electrode.

[0194] Referring to FIG. 12a, pixel circuits (PC) can be formed on a substrate (100), and an electrode layer (1200) can be formed on a fifth insulating layer (117). Although not shown in FIG. 12a, the electrode layer (1200) can be electrically connected to a transistor of the pixel circuit (PC).

[0195] The electrode layer (1200) may include layers. For example, the electrode layer (1200) may include a metal film and a conductive oxide film disposed above and below the metal film, respectively. The metal film may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. The conductive oxide film may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In one embodiment, the electrode layer (1200) may have a three-layer structure in which an indium tin oxide (ITO) layer, a silver (Ag) layer, and an indium tin oxide (ITO) layer are stacked.

[0196] A pre-protective layer (1125) is formed on the electrode layer (1200). The pre-protective layer (1125) may include the metal oxide described above. First photoresists (PR1) may be arranged to be spaced apart from each other on the pre-protective layer (1125), and the pre-protective layer (1125) may be etched using each of the first photoresists (PR1). Through the etching of the pre-protective layer (1125), a first protective layer (125A) and a second protective layer (125B) spaced apart from each other may be formed on the electrode layer (1200) as illustrated in FIG. 12B.

[0197] Referring to FIG. 12C, second photoresists (PR2) can be formed to cover each of the first protective layer (125A) and the second protective layer (125B). The second photoresists (PR2) can be spaced apart from each other. The width of each of the second photoresists (PR2) can be greater than the width of each of the first protective layer (125A) and the second protective layer (125B). Therefore, the upper surface and side surface of each of the first protective layer (125A) and the second protective layer (125B) can both be in contact with and covered by the second photoresist (PR2).

[0198] By removing a portion of the electrode layer (1200) that does not overlap with the second photoresist (PR2), a first pixel electrode (200A) and a second pixel electrode (200B) can be formed as illustrated in FIG. 12d. The width of the first pixel electrode (200A) may be greater than the width of the first protective layer (125A), and the width of the second pixel electrode (200B) may be greater than the width of the second protective layer (125B). The structures of the first pixel electrode (200A) and the first protective layer (125A), and the second pixel electrode (200B) and the second protective layer (125B) illustrated in FIG. 12d are as described above with reference to FIG. 7.

[0199] The process of forming a bank layer having an overhang, and forming an intermediate layer, a counter electrode, and an upper layer is as described above with reference to FIGS. 8 to 10, and therefore, a repeated description may be omitted.

[0200] According to the embodiments of the present invention described above, by forming a pixel electrode and a protective layer together using a photoresist (PR) and etching the protective layer using the bank layer (123) as a mask, it is possible to prevent a material included in the pixel electrode, such as silver (Ag), from being eluted and contaminating the display device (10) during the etching process. In addition, since the charge generation layer included in the intermediate layer (220) formed through the above-described process is separated around the overhang (123P), the problem of current leakage through the charge generation layer can be prevented. Unlike the charge generation layer, the counter electrode (230) is not separated but formed continuously, so that a voltage drop due to the resistance of the counter electrode (230) itself can be prevented.

[0201] Fig. 13 is a schematic cross-sectional view showing a part of a display device (10) according to one embodiment of the present invention.

[0202] Referring to FIG. 13, the display device (10) may include a substrate (100), pixel circuits (PC) arranged on the substrate (100), and light-emitting diodes electrically connected to each of the pixel circuits (PC). In this regard, FIG. 13 illustrates two light-emitting diodes, for example, first and second light-emitting diodes (LED1, LED2).

[0203] The substrate (100) may include a glass material or a polymer resin. As an example, the substrate (100) may have an alternating laminated structure of a base layer including a polymer resin and a barrier layer including an inorganic insulating material such as silicon oxide or silicon nitride. The polymer resin may include a polymer resin such as polyethersulfone, polyarylate, polyether imide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, etc.

[0204] The pixel circuit (PC) may include transistors and capacitors, and in this regard, FIG. 13 illustrates a first transistor (T1), a first capacitor (C1), and a second capacitor (C2). The pixel circuit (PC) may include conductive layers and semiconductor layers constituting the aforementioned transistors or capacitors.

[0205] A first conductive layer (CL1) may be disposed on a substrate (100). The first conductive layer (CL1) may include a conductive material such as a metal. For example, the first conductive layer (CL1) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may include a single-layer or multi-layer structure including the aforementioned materials.

[0206] The buffer layer (111) may be disposed on the first conductive layer (CL1). The buffer layer (111) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0207] The second conductive layer (CL2) is disposed on the buffer layer (111) and may overlap the first conductive layer (CL1). In one embodiment, the first conductive layer (CL1) may include a first electrode (C21) of the second capacitor (C2), and the second conductive layer (CL2) may include a second electrode (C22) of the second capacitor (C2). The second conductive layer (CL2) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a single-layer or multi-layer structure including the aforementioned material.

[0208] The first insulating layer (112) may be disposed on the second conductive layer (CL2). The first insulating layer (112) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0209] The semiconductor layer (ACT1) may be disposed on the first insulating layer (112). The semiconductor layer (ACT1) may include a channel region (CH1), and a source region (S1) and a drain region (D1) disposed on both sides of the aforementioned channel region (CH1). The semiconductor layer (ACT1) may include an oxide of at least one material selected from the group consisting of indium (In), gallium (Ga), stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). For example, the semiconductor layer (ACT1) may be an ITZO (InSnZnO) semiconductor layer, an IGZO (InGaZnO) semiconductor layer, etc. A conductive (or conductive) process such as plasma treatment may be performed on at least a portion of the semiconductor layer (ACT1).

[0210] The third conductive layer (CL3) may be disposed on the semiconductor layer (ACT1) with the second insulating layer (113) therebetween. A portion of the third conductive layer (CL3) may include a first-first gate electrode (G11) overlapping the channel region (CH1), and a portion of the second conductive layer (CL2) may include a first-second gate electrode (G12) overlapping the channel region (CH1). The first-first gate electrode (G11) and the first-second gate electrode (G12) may overlap each other with the channel region (CH1) therebetween. The second insulating layer (113) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0211] The third insulating layer (114) may be disposed on the third conductive layer (CL3). The third insulating layer (114) may include an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride, and may include a single-layer or multi-layer structure including the aforementioned inorganic insulating material.

[0212] The third conductive layer (CL3) may include the first electrode (C11) of the first capacitor (C1), and the fourth conductive layer (CL4) on the third insulating layer (114) may include the second electrode (C12) of the first capacitor (C1). The third conductive layer (CL3) and the fourth conductive layer (CL4) may each include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a single-layer or multi-layer structure including the aforementioned materials.

[0213] The data line (DL) may be arranged on the third insulating layer (114). The data line (DL) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may include a single-layer or multi-layer structure including the aforementioned materials.

[0214] The fourth insulating layer (116) may be placed on the data line (DL). The fourth insulating layer (116) may include an organic insulating material such as acrylic, BCB (Benzocyclobutene), polyimide, or HMDSO (Hexamethyldisiloxane).

[0215] The driving voltage line (PL) may be arranged on the fourth insulating layer (116) and covered with a fifth insulating layer (117). The driving voltage line (PL) may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may include a single-layer or multi-layer structure including the aforementioned materials. The fifth insulating layer (117) may include an organic insulating material.

[0216] A light emitting diode may include a pixel electrode, a counter electrode, and an intermediate layer interposed therebetween. For example, a first light emitting diode (LED1) may have a laminated structure of a first pixel electrode (200A), an intermediate layer (220), and a counter electrode (230), and a second light emitting diode (LED2) may have a laminated structure of a second pixel electrode (200B), an intermediate layer (220), and a counter electrode (230).

[0217] The first pixel electrode (200A) and the second pixel electrode (200B) may be spaced apart from each other and disposed on the fifth insulating layer (117). The first pixel electrode (200A) and the second pixel electrode (200B) may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof. In one embodiment, the first pixel electrode (200A) and the second pixel electrode (200B) may further include a conductive oxide layer on and / or below the aforementioned reflective film.

[0218] The bank layer (123) may be disposed on the first pixel electrode (200A) and the second pixel electrode (200B). The bank layer (123) may include a first opening (123OP1) and a second opening (123OP2) overlapping the first pixel electrode (200A) and the second pixel electrode (200B), respectively. The bank layer (123) may include an organic insulating material. For example, the bank layer (123) may include an organic insulating material including a light-blocking material. In one embodiment, the bank layer (123) may include a polyimide (PI)-based binder and a pigment mixed with red, green, and blue. For example, the bank layer (123) may include a cardo-based binder resin and a mixture of a lactam black pigment and a blue pigment. For example, the bank layer (123) may include carbon black. The bank layer (123) may improve the contrast of the display device (10).

[0219] The bank layer (123) may include an overhang portion (123P) disposed on the upper surface of each of the first pixel electrode (200A) and the second pixel electrode (200B). Each overhang portion (123P) may overlap an outer portion of each of the first pixel electrode (200A) and the second pixel electrode (200B). In other words, an inner portion of the first pixel electrode (200A) may overlap the first opening (123OP1), and an outer portion of the first pixel electrode (200A) may overlap the overhang portion (123P). The overhang portion (123P) overlapping the first pixel electrode (200A) can be spaced apart from the upper surface of the first pixel electrode (200A) along a direction perpendicular to the upper surface of the first pixel electrode (200A) (e.g., z direction). The inner portion of the second pixel electrode (200B) can overlap the second opening (123OP2), and the edge portion of the second pixel electrode (200B) can overlap the overhang portion (123P). The overhang portion (123P) overlapping the second pixel electrode (200B) can be spaced apart from the upper surface of the second pixel electrode (200B) along a direction perpendicular to the upper surface of the second pixel electrode (200B) (e.g., z direction).

[0220] The first protective layer (125A) and the second protective layer (125B) may be disposed on the first pixel electrode (200A) and the second pixel electrode (200B), respectively. The first protective layer (125A) and the second protective layer (125B) may be disposed on the edge portions of the first pixel electrode (200A) and the second pixel electrode (200B), respectively, and may have a closed loop shape (or frame shape) on a plane.

[0221] The first protective layer (125A) may be disposed between the first pixel electrode (200A) and the overhang portion (123P) overlapping the first pixel electrode (200A), and the second protective layer (125B) may be disposed between the second pixel electrode (200B) and the overhang portion (123P) overlapping the second pixel electrode (200B).

[0222] The first protective layer (125A) and the second protective layer (125B) may include a metal oxide. Each of the first protective layer (125A) and the second protective layer (125B) may include zinc oxide (ZnO). For example, each of the first protective layer (125A) and the second protective layer (125B) may include the aforementioned zinc oxide and at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO). The content (at%) of at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO) included in each of the first protective layer (125A) and the second protective layer (125B) may be less than the content (at%) of zinc oxide.

[0223] The overhang portion (123P) of the bank layer (123) disposed on the first pixel electrode (200A) may further extend toward the inner portion of the first pixel electrode (200A) past the first protective layer (125A) in the horizontal direction (e.g., in the x or y direction). A void (or gap, space) may be located under the overhang portion (123P). Similarly, the overhang portion (123P) of the bank layer (123) disposed on the second pixel electrode (200B) may further extend toward the inner portion of the second pixel electrode (200B) past the second protective layer (125B) in the horizontal direction (e.g., in the x or y direction), and a void (or gap, space) may be located under the second pixel electrode (200B) and the overhang portion (123P).

[0224] The intermediate layer (220) may include a plurality of sub-layers. Some or all of the plurality of sub-layers may be separated with the overhang (123P) as the center. In one embodiment, FIG. 13 illustrates that among the sub-layers included in the intermediate layer (220), the sub-layers (221) arranged relatively lower are separated with the overhang (123P) as the center, and the sub-layers (222) arranged relatively upper are continuously extended without being separated around the overhang (123P). The sub-layers (221) arranged lower may include a first portion and a second portion separated with the overhang (123P) as the center, and one of the first portion and the second portion may be arranged on the upper surface of the first or second pixel electrode (200A, 200B), and the other may be arranged on the overhang (123P).

[0225] The counter electrode (230) may be disposed on the intermediate layer (220). The counter electrode (230) may be formed continuously without being separated around the overhang (123P). In other words, the counter electrode (230) may be shared by a plurality of light-emitting diodes, for example, the first and second light-emitting diodes (LED1, LED2). The counter electrode (230) may overlap a plurality of pixel electrodes, for example, the first and second pixel electrodes (200A, 200B).

[0226] The counter electrode (230) may be formed of a conductive material having a low work function. The counter electrode (230) may include a (semi-)transparent layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. For example, the counter electrode (230) may further include a layer such as ITO, IZO, ZnO, or In2O3 on the (semi-)transparent layer including the aforementioned material.

[0227] The upper layer (240) can be formed continuously similarly to the counter electrode (230). The upper layer (240) can overlap light-emitting diodes, for example, the first and second light-emitting diodes (LED1, LED2). The upper layer (240) can include a LiF layer and / or a capping layer, and the capping layer can be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material. The capping layer can include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The above carbocyclic compounds, heterocyclic compounds and amine group-containing compounds may optionally be substituted with substituents including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0228] Although not illustrated in FIG. 13, the light emitting diodes, for example, the first and second light emitting diodes (LED1, LED2), may be protected by an encapsulation layer. The encapsulation layer may include at least one inorganic encapsulation layer including an inorganic insulating material and at least one organic encapsulation layer including an organic insulating material. In one embodiment, the encapsulation layer may include a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer.

[0229] Fig. 14 is a schematic cross-sectional view showing an enlarged portion of section XIV of Fig. 13. Although Fig. 14 illustrates the first pixel electrode (200A) and the structure above the first pixel electrode (200A), the structure described with reference to Fig. 14 can be equally applied to other pixel electrodes and the structure above them, for example, the second pixel electrode (200B) and the structure above the second pixel electrode (200B).

[0230] Referring to FIG. 14, a first pixel electrode (200A) may be placed on an insulating layer, for example, a fifth insulating layer (117), and a first protective layer (125A) may be placed on an edge portion of the first pixel electrode (200A).

[0231] The overhang portion (123P) of the bank layer (123) may be positioned to overlap with an end portion, for example, an edge portion, of the first pixel electrode (200A). A first protective layer (125A) is disposed between the overhang portion (123P) and the first pixel electrode (200A), and the overhang portion (123P) may extend in a horizontal direction (e.g., x or y direction) past the first protective layer (125A), and a void (VD, or gap, space) may be positioned between the first pixel electrode (200A) and the overhang portion (123P).

[0232] The horizontal length (L) of the overhang (123P) may be greater than the vertical distance (H) of the overhang (123P). Here, the horizontal length (L) of the overhang (123P) represents the length in the horizontal direction (e.g., x or y direction) from the point where the first side surface (125S1), which is the inner surface of the first protective layer (125A), and the bottom surface of the first protective layer (125A) meet (hereinafter, the first edge, E1) to the edge of the overhang (123P). The vertical distance (H) of the overhang (123P) represents the length in the vertical direction (e.g., z direction) from the upper surface of the first pixel electrode (200A) to the bottom surface of the overhang (123P).

[0233] In one embodiment, the horizontal length (L) of the overhang (123P) may be in a range of about 100 nm to 900 nm, and the vertical distance (H) from the upper surface of the first pixel electrode (200A) to the overhang (123P) may be in a range of about 10 nm to 900 nm. In one embodiment, the vertical distance (H) to the overhang (123P) may be in a range of about 10 nm to 90 nm. In one embodiment, the horizontal length (L) of the overhang (123P) may be about 2 to 10 times the vertical distance (H) (2H ≤ L ≤ 10H). In one embodiment, the horizontal length (L) of the overhang (123P) may be about 500 nm, and the vertical distance (H) may be about 50 nm.

[0234] The first protective layer (125A) may include a first side (125S1) facing inward and a second side (125S2) opposite the first side (125S1). The second side (125S2) of the first protective layer (125A) may meet the side (200S) of the first pixel electrode (200A). In other words, the second side (125S2) of the first protective layer (125A) and the side (200S) of the first pixel electrode (200A) may be continuous. The second edge (E2) where the second side (125S2) of the first protective layer (125A) and the bottom surface meet may be the same as the edge where the side (200S) of the first pixel electrode (200A) and the top surface meet. In other words, the second side (125S2) of the first protective layer (125A) and the side (200S) of the first pixel electrode (200A) can meet each other at the second edge (E2).

[0235] The second side surface (125S2) of the first protective layer (125A) may be located on one side of the second edge (E2), and the side surface (200S) of the first pixel electrode (200A) may be located on the other side of the second edge (E2). In a cross-sectional view as illustrated in FIG. 14, the second side surface (125S2) of the first protective layer (125A) and the side surface (200S) of the first pixel electrode (200A) may extend in different directions with the second edge (E2) as the center. The minor angle (θ) between the second side surface (125S2) of the first protective layer (125A) and the side surface (200S) of the first pixel electrode (200A) may be greater than 90° and less than 180° (90° < θ < 180°).

[0236] The first inclination angle (α) of the second side surface (125S2) of the first protective layer (125A) and the second inclination angle (β) of the side surface (200S) of the first pixel electrode (200A) may be different from each other. The first inclination angle (α) formed by the second side surface (125S2) of the first protective layer (125A) with respect to the bottom surface of the first protective layer (125A) may be greater than the second inclination angle (β) formed by the side surface (200S) of the first pixel electrode (200A) with respect to the bottom surface of the first pixel electrode (200A). In one embodiment, the first inclination angle (α) may be about 45° to about 60°, and the second inclination angle (β) may have a smaller value than the first inclination angle (α).

[0237] The intermediate layer (220) may have a tandem structure including a charge generation layer (2150), lower sublayers (2100) below the charge generation layer (2150), and upper sublayers (2200) above the charge generation layer (2150).

[0238] The lower sublayers (2100) may include a first lower common layer (2111), a lower functional layer (2112), and a second lower common layer (2113).

[0239] The first lower common layer (2111) may include a hole transport layer (HTL) or may include a hole transport layer and a hole injection layer (HIL). The second lower common layer (2113) may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0240] The lower functional layer (2112) may include an emission layer or may have a multilayer structure including an emission layer and an auxiliary layer. The emission layer may include a polymer or a low-molecular organic material that emits light of a predetermined color (e.g., red, green, or blue). The auxiliary layer may serve to increase device efficiency by compensating for the optical resonance distance of light emitted from the emission layer. The auxiliary layer may include a resonance-assisting material, for example, the same material as the hole transport layer. The thickness of the lower functional layer (2112) may be greater than the thickness of the first lower common layer (2111) and / or the thickness of the second lower common layer (2113). In one embodiment, the thickness of the first lower common layer (2111) may be greater than the thickness of the second lower common layer (2113).

[0241] The first lower common layer (2111) and the second lower common layer (2113) can be shared by other light-emitting diodes, similar to the counter electrode (230) described with reference to FIG. 13, while the lower functional layer (2112) can be individually formed according to the corresponding light-emitting diode. In other words, the lower functional layer (2112) of each light-emitting diode can be separated and spaced from the lower functional layers of other adjacent light-emitting diodes.

[0242] In one embodiment, the first lower common layer (2111) and / or the second lower common layer (2113) may be formed using a mask having an opening substantially equal to the entire area of ​​the display area (DA). In this case, the second lower common layer (2113) may be in direct contact with the first lower common layer (2111) around the end of the lower functional layer (2112). The contact area of ​​the second lower common layer (2113) and the first lower common layer (2111) may be located on the upper surface of the bank layer (123). In one embodiment, one or at least one layer included in the second lower common layer (2113) may be formed using a mask having openings respectively corresponding to the light-emitting diodes, similar to the lower functional layer (2112).

[0243] The upper sublayers (2200) may include a first upper common layer (2221), an upper functional layer (2222), and a second upper common layer (2223).

[0244] The first upper common layer (2221) may include a hole transport layer (HTL) or may include a hole transport layer and a hole injection layer (HIL). The second upper common layer (2223) may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0245] The upper functional layer (2222) may include an emission layer, or may be a multilayer structure including an emission layer and an auxiliary layer. The emission layer may include a polymer or a low-molecular organic material that emits light of a predetermined color (e.g., red, green, or blue). The auxiliary layer may serve to increase device efficiency by compensating for the optical resonance distance of light emitted from the emission layer. The auxiliary layer may include a resonance-assisting material, for example, the same material as the hole transport layer. The emission layer of the upper functional layer (2222) may emit light of the same color as the emission layer of the lower functional layer (2112) and may include the same material as the emission layer of the lower functional layer (2112). In one embodiment, the thickness of the upper functional layer (2222) may be greater than the thickness of the first upper common layer (2221) and / or the thickness of the second upper common layer (2223). In one embodiment, the thickness of the upper functional layer (2222) may be smaller than the thickness of the first upper common layer (2221) and larger than the thickness of the second upper common layer (2223). The thickness of the second upper common layer (2223) may be smaller than the thickness of the first upper common layer (2221). In one embodiment, the thickness of the first upper common layer (2221) may be larger than the thickness of the first lower common layer (2111). The thickness of the second upper common layer (2223) may be larger than the thickness of the second lower common layer (2113).

[0246] The upper functional layer (2222) can be formed individually according to the corresponding light-emitting diode. In other words, the upper functional layer (2222) of each light-emitting diode can be separated and spaced from the upper functional layer of another adjacent light-emitting diode.

[0247] In one embodiment, the first upper common layer (2221) and the second upper common layer (2223) may be formed using a mask having an opening substantially equal to the entire area of ​​the display area (DA). In this case, the second upper common layer (2223) may be in direct contact with the first upper common layer (2221) around the end of the upper functional layer (2222). The contact area of ​​the second upper common layer (2223) and the first upper common layer (2221) may be located on the upper surface of the bank layer (123). In one embodiment, one or at least one layer included in the first upper common layer (2221) may be formed individually according to the light-emitting diode.

[0248] The charge generation layer (2150) may be disposed between the second lower common layer (2113) and the first upper common layer (2221). The charge generation layer (2150) may include a host and a dopant.

[0249] In one embodiment, the charge generation layer (2150) may have a bilayer structure including an N-type sub-charge generation layer (nCGL) and a P-type sub-charge generation layer (pCGL). The N-type sub-charge generation layer and the P-type sub-charge generation layer can further increase the luminous efficiency of a tandem light-emitting diode including the light-emitting layers.

[0250] The N-type sub-charge generation layer may include an N-type dopant material and an N-type host material. The N-type dopant material may be a metal of Group 1 or Group 2 of the periodic table, an organic material capable of injecting electrons, or a mixture thereof. For example, the N-type dopant material may be any one of an alkali metal and an alkaline earth metal. For example, the N-type sub-charge generation layer may be formed of an organic layer doped with an alkali metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs), or an alkaline earth metal such as magnesium (Mg), strontium (Sr), barium (Ba), or radium (Ra), but the present invention is not limited thereto. The N-type host material is a material capable of transferring electrons, such as Alq3(tris(8-hydroxyquinolino)aluminum), Liq(8-hydroxyquinolinolato-lithium), PBD(2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4oxadiazole), TAZ(3-(4-biphenyl)4-phenyl-5-tert-butylphenyl-1,2,4-triazole), spiro-PBD, and BAlq(bis(2-methyl-8-quinolinolate)-4-(phenylphenolato)aluminium), SAlq, TPBi(2,2',2-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), oxadiazole, triazole, phenanthroline, benzoxazole or It may be composed of one or more of benzthiazole, and the present invention is not limited thereto.

[0251] The P-type sub-charge generation layer may include a P-type dopant material and a P-type host material. The P-type dopant material may be made of, but is not limited to, an organic material such as a metal oxide, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ), HAT-CN (Hexaazatriphenylene-hexacarbonitrile), hexaazatriphenylene, or a metal material such as V2O5, MoOx, WO3, or the like. The P-type host material may be formed of a material capable of transmitting holes, for example, a material including at least one of NPD (N,N-dinaphthyl-N,N'-diphenyl benzidine) (N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-2,2'-dimethylbenzidine), TPD (N,N'-bis-(3-methylphenyl)-N,N'-bis-(phenyl)-benzidine), and MTDATA (4,4',4-Tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine), but the present invention is not limited thereto.

[0252] Some of the sub-layers included in the intermediate layer (220), for example, the charge generation layer (2150) and the lower sub-layers (2100) below the charge generation layer (2150), may include portions separated around the overhang (123P). The charge generation layer (2150) and the lower sub-layers (2100) may correspond to the sub-layers (221) arranged relatively lower among the intermediate layer (220) described above with reference to FIG. 13.

[0253] A first portion of each of the first lower common layer (2111), the lower functional layer (2112), the second lower common layer (2113), and the charge generation layer (2150) may be disposed on the first pixel electrode (200A) through the first opening (123OP1). A second portion of each of the first lower common layer (2111), the lower functional layer (2112), the second lower common layer (2113), and the charge generation layer (2150), which is separated from the first portion described above, may be disposed on the bank layer (123), for example, on the overhang portion (123P).

[0254] In one embodiment, the sum total (T) of the thicknesses of the first lower common layer (2111), the lower functional layer (2112), the second lower common layer (2113), and the charge generation layer (2150) may be greater than the vertical distance (H) of the overhang (123P).

[0255] Among the sub-layers included in the intermediate layer (220), the remaining ones, for example, the first upper common layer (2221), the upper functional layer (2222), and the second upper common layer (2223), may be formed continuously without separation with the overhang (123P) as the center. The upper sub-layers (2200) illustrated in FIG. 14 may correspond to the sub-layers (222) arranged relatively higher among the intermediate layer (220) described above with reference to FIG. 13.

[0256] Although Fig. 14 illustrates that the first upper common layer (2221), the upper functional layer (2222), and the second upper common layer (2223) are formed sequentially, the present invention is not limited thereto. In one embodiment, at least one selected from the first upper common layer (2221), the upper functional layer (2222), and the second upper common layer (2223) may be separated around the overhang (123P) similarly to the charge generation layer (2150).

[0257] The counter electrode (230) and the upper layer (240) can be formed continuously without being separated, respectively, with the overhang (123P) as the center.

[0258] Fig. 15 is a schematic cross-sectional view showing an enlarged portion of section XV of Fig. 14.

[0259] Referring to Fig. 15, the first pixel electrode (200A) may have a multilayer structure. For example, the first pixel electrode (200A) may have a three-layer structure of a first layer (201), a second layer (202), and a third layer (203). The material of the second layer (202) may be different from the material of the first layer (201) and the material of the third layer (203).

[0260] In one embodiment, the second layer (202) may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or compounds thereof. The first layer (201) and the third layer (203) may include conductive oxides. The conductive oxides may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In one embodiment, the second layer (202) of the first pixel electrode (200A) may be a layer containing silver (Ag), and the first layer (201) and the third layer (203) may be layers containing ITO.

[0261] The inclination angle (β2) of the side surface of the second layer (202) may be different from at least one selected from the inclination angle (β1) of the side surface of the first layer (201) and the inclination angle (β3) of the side surface of the third layer (203). For example, the inclination angle (β2) that the side surface of the second layer (202) forms with respect to the bottom surface of the second layer (202) may be greater than the inclination angle (β1) that the side surface of the first layer (201) forms with respect to the bottom surface of the first layer (201) and / or the inclination angle (β3) that the side surface of the third layer (203) forms with respect to the bottom surface of the third layer (203).

[0262] The side surface (200S) of the first pixel electrode (200A) described above with reference to FIG. 14 may correspond to an inclined surface of a surface connecting an edge (e.g., fourth edge, E4) where the bottom surface and the side surface of the first layer (201) described above with reference to FIG. 15 meet and an edge (e.g., third edge, E3) where the top surface and the side surface of the third layer (203) meet. The third edge (E3, FIG. 14) where the top surface and the side surface of the third layer (203) of the first pixel electrode (200A) described above with reference to FIG. 15 meet may be substantially the same as the second edge (E2) of the second side surface (125S2) of the first protective layer (125A) described above with reference to FIG. 14.

[0263] The structure of the first pixel electrode (200A) described with reference to Fig. 15 can be applied equally to other pixel electrodes. For example, the second pixel electrode (200B) can also have a three-layer structure as described with reference to Fig. 15.

[0264] FIGS. 16A to 16F are schematic cross-sectional views schematically illustrating a process for forming a display device according to one embodiment of the present invention.

[0265] Referring to Fig. 16a, pixel circuits (PC) are formed on a substrate (100). The substrate (100), the structure of the pixel circuit (PC), the buffer layer (111), and the first to fifth insulating layers (111, 112, 113, 114, 116, 117) may be as described above with reference to Fig. 13.

[0266] An electrode layer (1200) can be formed on the fifth insulating layer (117). Although not shown in Fig. 16a, the electrode layer (1200) can be electrically connected to a transistor of a pixel circuit (PC).

[0267] The electrode layer (1200) may include layers. For example, the electrode layer (1200) may include a metal film and a conductive oxide film disposed above and below the metal film, respectively. The metal film may include silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a compound thereof. The conductive oxide film may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and / or aluminum zinc oxide (AZO). In one embodiment, the electrode layer (1200) may have a three-layer structure in which an indium tin oxide (ITO) layer, a silver (Ag) layer, and an indium tin oxide (ITO) layer are stacked.

[0268] A pre-protective layer (1125) is formed on the electrode layer (1200). The pre-protective layer (1125) may include a metal oxide. In one embodiment, the pre-protective layer (1125) may include zinc oxide (ZnO). For example, the pre-protective layer (1125) may include zinc oxide and at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO). The content (at%) of at least one selected from indium oxide (InO), gallium oxide (GaO), and tin oxide (SnO) included in the pre-protective layer (1125) may be less than the content (at%) of zinc oxide included in the pre-protective layer (1125). In other words, the content (at%) of zinc oxide included in the pre-protective layer (1125) may be greater than the content of other metal oxides.

[0269] Referring to FIG. 16b, photoresists (PRs) are formed on the laminated structure of the electrode layer (1200) and the pre-protective layer (1125). The photoresists (PRs) may be spaced apart from each other. Thereafter, a portion of the pre-protective layer (1125) and a portion of the electrode layer (1200) that do not overlap with the photoresists (PRs) may be removed. A portion of the pre-protective layer (1125) and a portion of the electrode layer (1200) may be removed through etching (e.g., wet etching).

[0270] As a portion of the electrode layer (1200) and a portion of the preliminary protective layer (1125) are removed, pixel electrodes and protective layers on the pixel electrodes can be formed on the fifth insulating layer (117). In this regard, FIG. 16C illustrates that a first pixel electrode (200A) and a first protective layer (125A) on the first pixel electrode (200A) and a second pixel electrode (200B) and a second protective layer (125B) on the second pixel electrode (200B) are formed. The first stacked structure of the first pixel electrode (200A) and the first protective layer (125A), and the second stacked structure of the second pixel electrode (200B) and the second protective layer (125B) can be spaced apart from each other.

[0271] The first pixel electrode (200A) and the first protective layer (125A) formed in the same etching process may be connected side by side. As shown in a partially enlarged view of Fig. 16c, the side surface (200S) of the first pixel electrode (200A) and the second side surface (125S2) of the first protective layer (125A) may be connected to each other (e.g., directly connected). The first inclination angle (α) of the second side surface (125S2) of the first protective layer (125A) and the second inclination angle (β) of the side surface (200S) of the first pixel electrode (200A) may be different from each other. The first inclination angle (α) formed by the second side surface (125S2) of the first protective layer (125A) with respect to the bottom surface of the first protective layer (125A) may be greater than the second inclination angle (β) formed by the side surface (200S) of the first pixel electrode (200A) with respect to the bottom surface of the first pixel electrode (200A). In one embodiment, the first inclination angle (α) may be about 45° to about 60°, and the second inclination angle (β) may have a value smaller than the first inclination angle (α).

[0272] The first pixel electrode (200A) may include layers, for example, first to third layers (201, 202, 203, FIG. 15), as previously described with reference to FIG. 15, and specific characteristics of the first to third layers (201, 202, 203, FIG. 4) may be the same as those previously described with reference to FIG. 15. The second stacked structure of the second pixel electrode (200B) and the second protective layer (125B) is the same as the first stacked structure of the first pixel electrode (200A) and the first protective layer (125A), and therefore, repeated description may be omitted.

[0273] Referring to FIG. 16d, a bank layer (123) may be formed to cover each side of the first and second stacked structures described above. The bank layer (123) may have an opening that overlaps with the pixel electrode. In this regard, in FIG. 16d, the bank layer (123) may include a first opening (123OP1) that overlaps with the first pixel electrode (200A), and a second opening (123OP2) that overlaps with the second pixel electrode (200B).

[0274] The bank layer (123) may include an organic insulating material, such as an organic insulating material including a light-shielding material. In one embodiment, the bank layer (123) may include a polyimide (PI)-based binder and a pigment mixed with red, green, and blue. For example, the bank layer (123) may include a cardo-based binder resin and a mixture of a lactam-based black pigment and a blue pigment. For example, the bank layer (123) may include carbon black.

[0275] After forming the bank layer (123), a portion of the protective layer can be removed through an opening in the bank layer (123). A portion of the first protective layer (125A) can be removed through the first opening (123OP1), and a portion of the second protective layer (125B) can be removed through the second opening (123OP2). As a portion of the first protective layer (125A) and a portion of the second protective layer (125B) are removed, each of the first protective layer (125A) and the second protective layer (125B) can have a closed loop shape (or a frame shape) on a plane.

[0276] A portion of the first protective layer (125A) and a portion of the second protective layer (125B) may be removed through etching (e.g., wet etching). The area of ​​the removed portion of the first protective layer (125A) may be larger than the area of ​​the first opening (123OP1), and the area of ​​the removed portion of the second protective layer (125B) may be larger than the area of ​​the second opening (123OP2). In other words, the first protective layer (125A) may be removed up to the portion overlapping the first opening (123OP1) and the surrounding portion thereof, and the second protective layer (125B) may be removed up to the portion overlapping the second opening (123OP2) and the surrounding portion thereof. Accordingly, the bank layer (123) may include an overhang portion (123P) as illustrated in FIG. 16E.

[0277] Referring to FIG. 16e, the overhang portion (123P) can overlap the edge portions of each of the first pixel electrode (200A) and the second pixel electrode (200B), and the characteristics of the horizontal distance and vertical distance of the overhang portion (123P) are as described above with reference to FIG. 14.

[0278] Referring to FIG. 16f, an intermediate layer (220), a counter electrode (230), and an upper layer (240) can be formed on a bank layer (123) including an overhang portion (123P). Each of the intermediate layer (220), the counter electrode (230), and the upper layer (240) can be formed through a chemical vapor deposition method.

[0279] The intermediate layer (220) may include a plurality of sub-layers. Some or all of the plurality of sub-layers may be separated with the overhang (123P) as the center. In one embodiment, FIG. 16f illustrates that some of the sub-layers (221) among the plurality of layers included in the intermediate layer (220) are separated with the overhang (123P) as the center, and the remaining sub-layers (222) among the plurality of layers included in the intermediate layer (220) are formed continuously. The specific structure of the intermediate layer (220) is the same as that described above with reference to FIG. 14, and thus, a repeated description may be omitted.

[0280] The counter electrode (230) and the upper layer (240) can be formed continuously without being separated, centered on the overhang (123P).

[0281] According to the embodiment described with reference to FIGS. 16A to 16E, by forming a pixel electrode and a protective layer together using a photoresist (PR), and etching the protective layer using the bank layer (123) as a mask, it is possible to prevent a material included in the pixel electrode, such as silver (Ag), from being eluted and contaminating the display device (10) during the etching process. In addition, in the process of forming a light-emitting diode, the process can be simplified and the time can be reduced by using a small amount of photoresist. In addition, since the charge generation layer included in the intermediate layer (220) formed through the above-described process is separated around the overhang (123P), the problem of current leakage through the charge generation layer can be prevented. Unlike the charge generation layer, the counter electrode (230) is not separated but formed continuously, so that a voltage drop due to the resistance of the counter electrode (230) itself can be prevented.

[0282] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. First pixel electrode; A bank layer having a first opening overlapping the first pixel electrode and an overhang portion disposed on an upper surface of the first pixel electrode; A first protective layer disposed between the edge portion of the first pixel electrode and the overhang portion of the bank layer; An intermediate layer, overlapping the first pixel electrode through the first opening of the bank layer and including a plurality of sub-layers; and It includes a counter electrode arranged on the above intermediate layer; The above overhang has a horizontal length from the first edge of the first side of the first protective layer to the edge of the above overhang and a vertical distance from the upper surface of the above first pixel electrode to the above overhang, The above multiple sub-layers of the above intermediate layer are, charge generation layer; Lower sublayers below the charge generation layer; and comprising upper sublayers above the charge generation layer; A display device, wherein the lower sub-layers and the charge generation layer each include a plurality of portions separated by the overhang.

2. In paragraph 1, The above charge generation layer is, An N-type sub-charge generation layer comprising an N-type dopant material and an N-type host material; and A display device comprising a P-type sub-charge generation layer including a P-type dopant material and a P-type host material.

3. In paragraph 1, A display device, wherein the sum of the thicknesses of the lower sub-layers and the thickness of the charge generation layer is greater than the vertical distance from the upper surface of the first pixel electrode to the overhang.

4. In paragraph 1, A display device, wherein at least one of the upper sub-layers extends continuously without separation around the overhang.

5. In paragraph 1, A display device in which the above counter electrode extends continuously without being separated from the periphery of the overhang.

6. In paragraph 1, A display device wherein the horizontal length of the overhang is greater than the vertical distance.

7. In paragraph 1, The above lower sub-layers and the above upper sub-layers are, respectively, A functional layer including a light-emitting layer; A lower common layer below the above functional layer; and A display device comprising an upper common layer over the functional layer.

8. In paragraph 7, Further comprising a second pixel electrode adjacent to the first pixel electrode, A display device, wherein the intermediate layer further includes another functional layer that overlaps the second pixel electrode and includes a light-emitting layer, wherein the functional layer and the other functional layer are spaced apart from each other.

9. In paragraph 1, A display device in which the first protective layer includes a second side opposite the first side, and a second edge where the second side of the first protective layer and the upper surface of the first pixel electrode meet is spaced apart from a third edge where the side surface of the first pixel electrode and the upper surface of the first pixel electrode meet.

10. In paragraph 1, A display device, wherein the first protective layer extends past the side surface of the first pixel electrode and onto the upper surface of the insulating layer disposed under the first pixel electrode.

11. In paragraph 10, A display device, wherein the first protective layer is in direct contact with the side surface of the first pixel electrode.

12. In paragraph 1, The above first pixel electrode is, 1st floor; A second layer disposed on the first layer; and Including a third layer arranged on the second layer, A display device wherein the inclination angle of the side surface of the second layer is greater than at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer.

13. In paragraph 1, A display device, wherein the first protective layer comprises a metal oxide.

14. First pixel electrode; A bank layer having a first opening overlapping the first pixel electrode and an overhang portion disposed on an upper surface of the first pixel electrode; A first protective layer disposed between the edge portion of the first pixel electrode and the overhang portion of the bank layer; An intermediate layer overlapping the first pixel electrode through the first opening of the bank layer; and It includes a counter electrode arranged on the above intermediate layer; The above intermediate layer comprises a plurality of sub-layers, wherein at least one of the plurality of sub-layers comprises a plurality of parts separated around the overhang portion, The above overhang has a horizontal length from the first edge of the first side of the first protective layer to the edge of the above overhang and a vertical distance from the upper surface of the above first pixel electrode to the above overhang. A display device, wherein the first protective layer includes a second side opposite the first side, and a first inclination angle of the second side of the first protective layer is different from a second inclination angle of the side of the first pixel electrode.

15. In paragraph 14, A display device wherein the first inclination angle is greater than the second inclination angle.

16. In paragraph 14, A display device wherein the horizontal length of the overhang is greater than the vertical distance.

17. In paragraph 14, A display device, wherein the second side of the first protective layer meets the side of the first pixel electrode at the second edge opposite the first edge, and a minor angle formed by the second side of the first protective layer and the side of the first pixel electrode is greater than about 90˚ and less than about 180˚.

18. In paragraph 14, The above first pixel electrode is, 1st floor; A second layer disposed on the first layer; and Including a third layer arranged on the second layer, A display device, wherein the inclination angle of the side surface of the second layer is different from at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer.

19. In paragraph 18, A display device wherein the inclination angle of the side surface of the second layer is greater than at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer.

20. In paragraph 14, The multiple sublayers of the above intermediate layer are: charge generation layer; Lower sublayers beneath the charge generation layer; Including upper sublayers above the charge generation layer; A display device, wherein the lower sub-layers and the charge generation layer each include a plurality of portions separated by the overhang.

21. In paragraph 20, The above charge generation layer is, An N-type sub-charge generation layer comprising an N-type dopant material and an N-type host material; and A display device comprising a P-type sub-charge generation layer including a P-type dopant material and a P-type host material.

22. In paragraph 20, A display device, wherein the sum of the thicknesses of the lower sub-layers and the thickness of the charge generation layer is greater than the vertical distance from the upper surface of the first pixel electrode to the overhang.

23. In paragraph 20, A display device, wherein at least one of the upper sub-layers extends continuously without separation around the overhang.

24. In paragraph 20, The above lower sub-layers and the above upper sub-layers are, respectively, A functional layer including a light-emitting layer; A lower common layer below the above functional layer; and A display device comprising an upper common layer over the functional layer.

25. In paragraph 24, A display device, wherein the upper common layer and the lower common layer are in direct contact with each other on the bank layer.

26. In paragraph 14, A display device, wherein the first protective layer comprises a metal oxide.

27. A process for forming a first laminated structure including a first pixel electrode and a first protective layer on the first pixel electrode and a second laminated structure including a second pixel electrode and a second protective layer on the second pixel electrode; A process for forming a bank layer covering a side surface of the first laminated structure and a side surface of the second laminated structure, and having a first opening overlapping the first pixel electrode and a second opening overlapping the second pixel electrode; A process of removing a portion of the first protective layer and a portion of the second protective layer through the first opening and the second opening of the bank layer; A process for forming an intermediate layer including a charge generation layer; and A process for forming a counter electrode on the above intermediate layer; In the process of removing a portion of the first protective layer and a portion of the second protective layer, the bank layer includes an overhang portion positioned on the upper surface of each of the first pixel electrode and the second pixel electrode, The overhang on the first pixel electrode has a horizontal length from the first edge of the first side of the first protective layer to the edge of the overhang and a vertical distance from the upper surface of the first pixel electrode to the overhang. A method for manufacturing a display device, wherein in the process of forming the intermediate layer, the charge generation layer includes a plurality of parts separated by the overhang.

28. In paragraph 27, The above intermediate layer is, Lower sublayers below the charge generation layer; and Further comprising upper sublayers above the charge generation layer; A method for manufacturing a display device, wherein in the process of forming the intermediate layer, the lower sub-layers include a plurality of parts separated by the overhang.

29. In paragraph 28, A method for manufacturing a display device, wherein at least one of the upper sub-layers extends continuously without separation around the overhang.

30. In paragraph 28, The above lower sub-layers and the above upper sub-layers are, respectively, A functional layer including a light-emitting layer; A lower common layer below the above functional layer; and A method for manufacturing a display device, comprising: an upper common layer over the functional layer.

31. In paragraph 30, A method for manufacturing a display device, wherein the upper common layer and the lower common layer are in direct contact with each other on the bank layer.

32. In paragraph 27, A method for manufacturing a display device, wherein the counter electrode extends continuously without being separated around the overhang.

33. In paragraph 27, A method for manufacturing a display device, wherein the horizontal length of the overhang is greater than the vertical distance.

34. In paragraph 27, A method for manufacturing a display device, wherein each of the first protective layer and the second protective layer contains a metal oxide.

35. In paragraph 27, The process of forming the first laminated structure and the second laminated structure is as follows: A process for forming the first pixel electrode and the second pixel electrode which are spaced apart from each other; A process of forming a pre-protective layer on the first pixel electrode and the second pixel electrode; A process of forming photoresists disposed on the above-mentioned preliminary protective layer and overlapping each of the first pixel electrode and the second pixel electrode; and A method for manufacturing a display device, comprising: a process of forming the first protective layer and the second protective layer by removing the pre-protective layer that does not overlap the photoresists; 36. In paragraph 35, The width of each of the above photoresists is The width of the pixel electrode overlapping between the first pixel electrode and the second pixel electrode is smaller than that of the first pixel electrode and the second pixel electrode, A method for manufacturing a display device, wherein a second side of the first protective layer, opposite the first side, meets the upper surface of the first pixel electrode.

37. In paragraph 35, The width of each of the above photoresists is The width of the overlapping pixel electrode among the first pixel electrode and the second pixel electrode is larger than that of the overlapping pixel electrode, A method for manufacturing a display device, wherein the first protective layer overlaps a side surface of the first pixel electrode.

38. In paragraph 27, A method for manufacturing a display device, wherein the first protective layer is in direct contact with the upper surface of the insulating layer under the first pixel electrode.

39. In paragraph 27, The above charge generation layer is, An N-type sub-charge generation layer comprising an N-type dopant material and an N-type host material; and A method for manufacturing a display device, comprising a P-type sub-charge generation layer including a P-type dopant material and a P-type host material.

40. In paragraph 28, A method for manufacturing a display device, wherein the sum of the thicknesses of the lower sub-layers and the thickness of the charge generation layer is greater than the vertical distance from the upper surface of the first pixel electrode to the overhang.

41. In paragraph 27, A method for manufacturing a display device, wherein the first protective layer includes a second side opposite the first side, and the first inclination angle of the second side of the first protective layer is different from the second inclination angle of the side of the first pixel electrode.

42. In paragraph 41, A method for manufacturing a display device, wherein the first inclination angle is greater than the second inclination angle.

43. In paragraph 41, A method for manufacturing a display device, wherein the second side of the first protective layer meets the side of the first pixel electrode at the second edge opposite the first edge, and a minor angle formed by the second side of the first protective layer and the side of the first pixel electrode with the second edge as the center is greater than about 90˚ and less than about 180˚.

44. In paragraph 41, The above first pixel electrode is, 1st floor; A second layer disposed on the first layer; and Including a third layer arranged on the second layer, A method for manufacturing a display device, wherein at least one selected from the inclination angle of the side surface of the first layer and the inclination angle of the side surface of the third layer is different from the inclination angle of the side surface of the second layer.

45. In paragraph 44, A method for manufacturing a display device, wherein the inclination angle of the side surface of the second layer is greater than at least one selected from the inclination angle of the side surface of the first layer or the inclination angle of the side surface of the third layer.

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