Display device

Abstract

Provided is a highly reliable display device. The display device includes: a light emitting device, a light blocking layer, a first conductive layer, a second conductive layer, and a first insulative layer. The light-emitting device has a first electrode, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer. The light-blocking layer is positioned above the first conductive layer. The first insulative layer is positioned above the light-blocking layer. The second conductive layer is embedded in the light-blocking layer and the first insulative layer, and includes a region that contacts an upper surface of the first conductive layer. The first electrode includes: a region that contacts an upper surface of the first insulative layer; and a region that contacts an upper surface of the second conductive layer. The light-blocking layer includes an organic material. The first insulative layer includes an inorganic material. Preferably, the first insulative layer includes silicon and oxygen.

Description

display device

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof.

[0003] In recent years, display devices have been expected to be used in a variety of applications. For example, applications of large display devices include home television devices (also referred to as televisions or television receivers), digital signage, and public information displays (PIDs). Furthermore, development of mobile information terminals, such as smartphones and tablet terminals equipped with touch panels, is progressing.

[0004] There is also a demand for higher definition display devices. Devices requiring high-definition display devices, such as devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0005] As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing an electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to a display device.

[0006] Patent Document 1 discloses a display device for VR that uses an organic EL device (also called an organic EL element).

[0007] International Publication No. 2018 / 087625

[0008] An object of one embodiment of the present invention is to provide a highly reliable display device.An object of one embodiment of the present invention is to provide a display device with high contrast.An object of one embodiment of the present invention is to provide a display device with high visibility.An object of one embodiment of the present invention is to provide a display device with high luminance.An object of one embodiment of the present invention is to provide a display device with high definition.An object of one embodiment of the present invention is to provide a display device with high resolution.An object of one embodiment of the present invention is to provide a novel display device.

[0009] An object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable display device.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high contrast.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high visibility.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high luminance.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high definition.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high resolution.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high productivity.An object of one embodiment of the present invention is to provide a novel method for manufacturing a display device.

[0010] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0011] One embodiment of the present invention is a display device including a light-emitting device, a light-shielding layer, a first conductive layer, a second conductive layer, and a first insulating layer. The light-emitting device includes a first electrode, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer. The light-shielding layer is located on the first conductive layer. The first insulating layer is located on the light-shielding layer. The second conductive layer is embedded in the light-shielding layer and the first insulating layer and has a region in contact with a top surface of the first conductive layer. The first electrode has a region in contact with a top surface of the first insulating layer and a region in contact with a top surface of the second conductive layer. The light-shielding layer includes an organic material. The first insulating layer includes an inorganic material.

[0012] In the above-described display device, the first insulating layer preferably contains silicon and oxygen.

[0013] In the display device described above, the light-shielding layer preferably has a region on the first conductive layer with a thickness of 200 nm or more and 2000 nm or less.

[0014] In the above-described display device, it is preferable that the height of the upper surface of the first insulating layer coincides with or approximately coincides with the height of the upper surface of the second conductive layer.

[0015] The display device preferably includes a second insulating layer. The second insulating layer is preferably located between the light-shielding layer and the first insulating layer. The second insulating layer preferably contains aluminum and oxygen.

[0016] The display device preferably includes a layer, which is preferably located between the light-shielding layer and the second conductive layer, and which preferably contains aluminum and oxygen.

[0017] One embodiment of the present invention is a display device including a light-emitting device, a light-shielding layer, a first conductive layer, a second conductive layer, a layer, and a first insulating layer. The light-emitting device includes a first electrode, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer. The light-shielding layer is located on the first conductive layer. The first insulating layer is located on the light-shielding layer. The first insulating layer and the light-shielding layer have openings that reach the first conductive layer. The second conductive layer has regions that contact the top and side surfaces of the first insulating layer, the side surfaces of the light-shielding layer, and the top surface of the first conductive layer. The layer has a region that overlaps with the first conductive layer via the second conductive layer in the opening. The first electrode has regions that contact the top surface of the layer and the top surface of the second conductive layer. The light-shielding layer includes an organic material. The first insulating layer includes an inorganic material.

[0018] In the above-described display device, the first insulating layer preferably contains silicon and nitrogen.

[0019] In the display device described above, the light-shielding layer preferably has a region on the first conductive layer with a thickness of 200 nm or more and 2000 nm or less.

[0020] In the above-described display device, it is preferable that an edge of the first electrode coincides or approximately coincides with an edge of the second conductive layer.

[0021] In the above-described display device, the layer preferably has a region overlapping the top surface of the first insulating layer via the second conductive layer.

[0022] In the above display device, the layer preferably comprises an organic material.

[0023] According to one embodiment of the present invention, a highly reliable display device can be provided. According to one embodiment of the present invention, a display device with high contrast can be provided. According to one embodiment of the present invention, a display device with high visibility can be provided. According to one embodiment of the present invention, a display device with high luminance can be provided. According to one embodiment of the present invention, a display device with high definition can be provided. According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0024] According to one embodiment of the present invention, a method for manufacturing a highly reliable display device can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high contrast can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high visibility can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high luminance can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high definition can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high resolution can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high productivity can be provided. According to one embodiment of the present invention, a method for manufacturing a novel display device can be provided.

[0025] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0026] FIG. 1A is a top view showing an example of a display device. FIG. 1B is a cross-sectional view showing an example of a display device. FIG. 2A is a cross-sectional view showing an example of a display device. FIGS. 2B and 2C are top views showing an example of a display device. FIGS. 3A and 3B are cross-sectional views showing an example of a display device. FIGS. 4A to 4D are cross-sectional views showing an example of a display device. FIGS. 5A to 5D are cross-sectional views showing an example of a display device. FIGS. 6A and 6B are cross-sectional views showing an example of a display device. FIGS. 7A to 7D are cross-sectional views showing an example of a display device. FIGS. 8A and 8B are cross-sectional views showing an example of a display device. FIGS. 9A and 9B are cross-sectional views showing an example of a display device. FIGS. 10A to 10D are cross-sectional views showing an example of a display device. FIGS. 11A and 11B are cross-sectional views showing an example of a display device. FIGS. 12A and 12B are top views showing an example of a display device. FIGS. 13A to 13D are cross-sectional views showing an example of a display device. FIGS. 14A and 14B are top views showing an example of a display device. FIGS. 15A and 15B are cross-sectional views showing an example of a display device. FIGS. 16A to 16D are top views showing an example of a display device. FIGS. 17A and 17B are cross-sectional views showing an example of a display device. FIGS. 18A to 18D are cross-sectional views showing an example of a display device. FIGS. 19A to 19E are cross-sectional views showing an example of a display device. FIGS. 20A to 20E are cross-sectional views showing an example of a display device. FIGS. 21A and 21B are cross-sectional views showing an example of a display device. FIG. 21C is a top view showing an example of a display device. FIGS. 22A and 22B are cross-sectional views showing an example of a display device. FIG. 22C is a top view showing an example of a display device. FIGS. 23A and 23B are cross-sectional views showing an example of a display device. FIGS. 24A and 24B are top views showing an example of a display device. FIGS. 25A and 25B are cross-sectional views showing an example of a display device. FIG. 26 is a cross-sectional view showing an example of a display device. FIGS. 27A and 27B are cross-sectional views showing an example of a display device. FIGS. 28A and 28B are cross-sectional views showing an example of a display device. FIG. 29 is a cross-sectional view showing an example of a display device. 30A and 30B are a top view and a cross-sectional view showing an example of a display device.31A to 31D are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 32A to 32C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 33A to 33C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 34A to 34C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 35A to 35C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 36A and 36B are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 37A and 37B are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 38A to 38C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 39A to 39C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 40A to 40C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 41A to 41C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 42A to 42D are cross-sectional views showing an example of a manufacturing method of a display device. 43A to 43D are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 44A to 44C are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 45A to 45C are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 46A to 46G are views showing an example of a pixel. FIGS. 47A to 47K are views showing an example of a pixel. FIGS. 48A and 48B are perspective views showing an example of a display device. FIG. 49 is a cross-sectional view showing an example of a display device. FIGS. 50A and 50B are cross-sectional views showing an example of a display device. FIGS. 51 is a cross-sectional view showing an example of a display device. FIG. 52 is a cross-sectional view showing an example of a display device. FIG. 53 is a cross-sectional view showing an example of a display device. FIG. 54 is a cross-sectional view showing an example of a display device. FIG. 55 is a cross-sectional view showing an example of a display device. FIGS. 56A to 56C are cross-sectional views showing an example of a display device. FIG. 57 is a perspective view showing an example of a display device. FIG. 58A is a cross-sectional view showing an example of a display device. FIGS. 58B to 58D are cross-sectional views showing an example of a transistor. FIG. 59A is a cross-sectional view showing an example of a display device. 59B to 59E are cross-sectional views showing an example of a transistor, Fig. 60 is a cross-sectional view showing an example of a display device, and Fig. 61A and Fig. 61B are cross-sectional views showing an example of a display device.62A to 62F are diagrams showing an example of the configuration of a light-emitting device. FIGS. 63A and 63B are diagrams showing an example of the configuration of a light-receiving device. FIGS. 63C to 63E are diagrams showing an example of the configuration of a display device. FIGS. 64A to 64D are diagrams showing an example of an electronic device. FIGS. 65A to 65F are diagrams showing an example of an electronic device. FIGS. 66A to 66G are diagrams showing an example of an electronic device. FIGS. 67A and 67B are STEM images of a sample according to an example. FIGS. 68A and 68B are STEM images of a sample according to an example. FIG. 69 is a diagram showing the transmittance of a sample according to an example. FIG. 70 is a diagram showing the brightness ratio of a sample according to an example. FIGS. 71A to 71E are STEM images of a sample according to an example. FIGS. 72A and 72B are diagrams showing the surface roughness of a sample according to an example. FIG. 73 is a diagram showing the transmittance of a sample according to an example. FIG. 74 is a diagram showing the brightness ratio of a sample according to an example.

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0029] For ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0030] In this specification, the ordinal numbers such as "first" and "second" are used for convenience and do not limit the number of components or the order of the components (for example, the order of processes or the order of stacking). Furthermore, the ordinal numbers assigned to components in one part of this specification may not match the ordinal numbers assigned to the same components in other parts of this specification or in the claims.

[0031] In this specification and drawings, when the same reference numeral is used for multiple elements, and particularly when it is necessary to distinguish between them, an identification symbol such as "_1", "[n]", or "[m, n]" may be added to the reference numeral. Furthermore, when explaining matters common to multiple elements to which an identification numeral is added, or when it is not necessary to distinguish between them, the elements may be described without the identification numeral.

[0032] The words "film" and "layer" can be interchangeable in some cases or depending on the situation. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0033] A transistor is a type of semiconductor element that can perform functions such as amplifying current or voltage and performing switching operations to control conduction or non-conduction. The term "transistor" as used herein includes an insulated gate field effect transistor (IGFET) and a thin film transistor (TFT).

[0034] The functions of "source" and "drain" may be interchanged when transistors of different polarities are used or when the direction of current changes during circuit operation. For this reason, the terms "source" and "drain" may be used interchangeably in this specification. The source and drain of a transistor may be appropriately referred to as the source terminal and drain terminal, or the source electrode and drain electrode, depending on the situation.

[0035] The terms "gate" and "back gate" can be used interchangeably. Therefore, in this specification and the like, the terms "gate" and "back gate" can be used interchangeably. Note that the names of the gate and back gate of a transistor can be appropriately changed to gate electrode and back gate electrode, etc., depending on the situation.

[0036] In this specification, "connection" includes, as an example, "electrical connection." Note that the term "electrical connection" is sometimes used to define the connection relationship between circuit elements as an object. Furthermore, "electrical connection" includes "direct connection" and "indirect connection." "A and B are directly connected" means that A and B are connected without the intervention of a circuit element (e.g., a transistor, a switch, etc.; wiring is not considered a circuit element). On the other hand, "A and B are indirectly connected" means that A and B are connected via one or more circuit elements.

[0037] For example, assuming that a circuit including A and B is operating, if there is a time during the operation of the circuit when an electrical signal is exchanged or an interaction of electrical potential occurs between A and B, then it can be defined that "A and B are indirectly connected" as objects. Note that even if there is a time during the operation of the circuit when no electrical signal is exchanged or an interaction of electrical potential occurs between A and B, it can still be defined that "A and B are indirectly connected" as long as there is a time during the operation of the circuit when an electrical signal is exchanged or an interaction of electrical potential occurs between A and B.

[0038] An example of a case where "A and B are indirectly connected" is when A and B are connected via the source and drain of one or more transistors. On the other hand, an example of a case where it cannot be said that "A and B are indirectly connected" is when an insulator is present in the path from A to B. Specifically, there are cases where a capacitive element is connected between A and B, and cases where a gate insulating film of a transistor is present between A and B. Therefore, it cannot be said that "the gate (A) of a transistor and the source or drain (B) of the transistor are indirectly connected."

[0039] Another example of a case where it cannot be said that "A and B are indirectly connected" is when multiple transistors are connected via their sources and drains to the path from A to B, and a constant potential V is supplied to a node between one transistor and another transistor from a power supply, GND, etc.

[0040] In this specification, unless otherwise specified, the on-state current refers to the drain current (also referred to as Id) when a transistor is in an on state (also referred to as a conductive state). Unless otherwise specified, the on state refers to a state in which the gate-source voltage (also referred to as Vg or Vgs) is equal to or higher than a threshold voltage (also referred to as Vth) for an n-channel transistor, or a state in which the gate-source voltage is equal to or lower than the threshold voltage for a p-channel transistor.

[0041] In this specification and the like, unless otherwise specified, the off-state current refers to a leakage current between the source and drain when a transistor is in an off state (also referred to as a non-conducting state or a cut-off state). Unless otherwise specified, the off-state refers to a state in which the voltage between the gate and the source is lower than the threshold voltage in an n-channel transistor, and higher than the threshold voltage in a p-channel transistor.

[0042] In this specification, "parallel" refers to a state in which two straight lines are arranged at an angle of -10 degrees or more and 10 degrees or less. Therefore, it also includes cases in which the angle is -5 degrees or more and 5 degrees or less. Furthermore, "substantially parallel" refers to a state in which two straight lines are arranged at an angle of -30 degrees or more and 30 degrees or less. Furthermore, "perpendicular" refers to a state in which two straight lines are arranged at an angle of 80 degrees or more and 100 degrees or less. Therefore, it also includes cases in which the angle is 85 degrees or more and 95 degrees or less. Furthermore, "substantially perpendicular" refers to a state in which two straight lines are arranged at an angle of 60 degrees or more and 120 degrees or less.

[0043] In this specification, the top surface shape of a component refers to the contour shape of the component as viewed from above (also referred to as a plan view). The top surface view refers to a view from the normal direction of the surface on which the component is formed or the surface of a support (e.g., a substrate) on which the component is formed.

[0044] In this specification, the phrase "top surface shapes that match or approximately match" refers to at least a portion of the contours of stacked layers overlapping. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes that match or approximately match" may also be used. Furthermore, when the top surface shapes match or approximately match, it can also be said that "edges match or approximately match" or "edges are aligned or approximately aligned."

[0045] In this specification, a tapered shape refers to a shape in which at least a part of a side surface of a structure is inclined with respect to a substrate surface or a surface to be formed. The angle formed between the inclined side surface and the substrate surface or the surface to be formed is sometimes referred to as a taper angle.

[0046] In this specification and the like, a step disconnection refers to a phenomenon in which a layer, a film, or an electrode is separated due to the shape of the surface on which it is formed (for example, a step or the like).

[0047] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure. Because devices with an MML structure can be manufactured without using a metal mask, they can exceed the upper limit of resolution due to the alignment accuracy of the metal mask. Furthermore, devices with an MML structure can eliminate the need for equipment for manufacturing metal masks and a metal mask cleaning process. Furthermore, devices with an MML structure are suitable for mass production because they can keep manufacturing costs low.

[0048] In this specification and the like, a structure in which light-emitting layers are separately formed for light-emitting elements (light-emitting devices) with different emission wavelengths may be referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting element, thereby expanding the range of material and configuration options and facilitating improvements in brightness and reliability.

[0049] In this specification and the like, holes or electrons may be referred to as "carriers." For example, in a light-emitting element, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0050] In this specification and the like, a light-emitting element has an EL layer between a pair of electrodes (a first electrode and a second electrode). The light-emitting element has a first electrode, an EL layer on the first electrode, and a second electrode on the EL layer. The EL layer has at least a light-emitting layer. Here, examples of layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier injection layer (a hole injection layer and an electron injection layer), a carrier transport layer (a hole transport layer and an electron transport layer), and a carrier block layer (a hole block layer and an electron block layer). In this specification and the like, a light-receiving element (also referred to as a light-receiving device) has at least an active layer functioning as a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the first electrode and the second electrode may be referred to as a pixel electrode, and the other may be referred to as a common electrode.

[0051] In this specification, the term "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0052] In this specification and the like, the mask layer is located above at least the light-emitting layer (more specifically, the layer that is processed into an island shape among the layers that constitute the EL layer) and has the function of protecting the light-emitting layer during the manufacturing process.

[0053] Embodiment 1 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 1A to 30B. FIG.

[0054] In this embodiment, a structure of a display device according to one embodiment of the present invention will be mainly described.

[0055] One embodiment of the present invention is a display device including a light-emitting device, a light-blocking layer, a first conductive layer, a second conductive layer, and a first insulating layer.

[0056] A light-emitting device is provided on the layer including the transistor, the light-emitting device having a first electrode, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer.

[0057] The first conductive layer corresponds to an electrode of a transistor, an electrode of a capacitor, or a wiring. The light-shielding layer is located on the first conductive layer. The first insulating layer is located on the light-shielding layer. The second conductive layer is embedded in the light-shielding layer and the first insulating layer and has a region in contact with the top surface of the first conductive layer. The first electrode has a region in contact with the top surface of the first insulating layer and a region in contact with the top surface of the second conductive layer. The light-shielding layer contains an organic material. The first insulating layer contains an inorganic material.

[0058] By providing a light-shielding layer over the first conductive layer, light from outside the display device (also referred to as external light) or light emitted from the light-emitting device is prevented from entering the transistor. This can prevent the electrical characteristics of the transistor from fluctuating due to light, resulting in a highly reliable transistor. Therefore, a highly reliable display device can be obtained.

[0059] FIG. 1A shows a top view (also referred to as a plan view) of a display device 100 according to one embodiment of the present invention. The display device 100 includes a display portion in which a plurality of pixels 110 are arranged and a connection portion 140 located outside the display portion. A plurality of subpixels are arranged in a matrix in the display portion. FIG. 1A shows two rows and six columns of subpixels, which together form two rows and two columns of pixels 110. The connection portion 140 can also be called a cathode contact portion.

[0060] The top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light-emitting region.

[0061] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0062] The circuit layout constituting the subpixel is not limited to the range of the subpixel shown in Fig. 1A and can be arranged outside of it. For example, the transistor included in the subpixel 11R can be located within the range of the subpixel 11G shown in Fig. 1A, and part or all of the transistor can be located outside the range of the subpixel 11R.

[0063] 1A shows the areas of the light-emitting regions of the subpixels 11R, 11G, and 11B as being equal or approximately equal, and the aperture ratios as being equal or approximately equal, but one embodiment of the present invention is not limited to this. The aperture ratios of the subpixels 11R, 11G, and 11B can be determined as appropriate. The aperture ratios of the subpixels 11R, 11G, and 11B can also be different from one another. Alternatively, any two or more of the subpixels 11R, 11G, and 11B can be equal or approximately equal.

[0064] A stripe arrangement is applied to the pixel 110 shown in FIG. 1A. The pixel 110 shown in FIG. 1A is composed of three subpixels: subpixel 11R, subpixel 11G, and subpixel 11B. The subpixels 11R, 11G, and 11B each have a light-emitting device that emits a different light color. Examples of the subpixels 11R, 11G, and 11B include subpixels of three colors: red (R), green (G), and blue (B), and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The number of types of subpixels is not limited to three and can be four or more. Examples of the four subpixels include subpixels of four colors: R, G, B, and white (W), subpixels of four colors: R, G, B, and Y, and subpixels of R, G, B, and infrared (IR).

[0065] Examples of blue light include light with a peak wavelength of 400 nm or more and less than 480 nm. Examples of green light include light with a peak wavelength of 480 nm or more and less than 540 nm. Examples of yellow light include light with a peak wavelength of 540 nm or more and less than 600 nm. Examples of red light include light with a peak wavelength of 600 nm or more and less than 700 nm.

[0066] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly (see FIG. 1A ). FIG. 1A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction.

[0067] 1A shows an example in which the connection portion 140 is located on one side of the display portion when viewed from above (also referred to as a plan view), but the location of the connection portion 140 is not particularly limited. The connection portion 140 can be provided in at least one location on the upper, right, left, or lower side of the display portion when viewed from above, and can also be provided so as to surround all four sides of the display portion, for example. The shape of the upper surface of the connection portion 140 can be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection portion 140 can be single or multiple.

[0068] [Configuration Example 1] Fig. 1B shows a cross-sectional view taken along the dashed dotted line X1-X2 in Fig. 1A. Fig. 2A shows an enlarged view of a portion of the cross-sectional view shown in Fig. 1B.

[0069] Light emitting device 130R, light emitting device 130G, and light emitting device 130B are provided on layer 101. Protective layer 131 is provided to cover light emitting device 130R, light emitting device 130G, and light emitting device 130B. Substrate 120 is bonded to protective layer 131 with resin layer 122.

[0070] In the following description, the light-emitting devices 130R, 130G, and 130B may be collectively referred to as the light-emitting devices 130.

[0071] The layer 101 includes one or more of a transistor, a capacitor, and a wiring. The layer 101 may include a pixel circuit for controlling the driving of the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B are each connected to one or more of the transistor, the capacitor, and the wiring included in the layer 101. FIG. 1B illustrates a configuration in which the layer 101 includes a substrate 103, a light-shielding layer 109, an insulating layer 182, a conductive layer 250R, a conductive layer 250G, a conductive layer 250B, a conductive layer 170R, a conductive layer 170G, and a conductive layer 170B. The conductive layer 250R, the conductive layer 250G, and the conductive layer 250B are provided on the substrate 103. The conductive layer 250R, the conductive layer 250G, and the conductive layer 250B correspond to an electrode of a transistor, an electrode of a capacitor, or a wiring, respectively. A light-shielding layer 109 is provided on the conductive layers 250R, 250G, and 250B, and an insulating layer 182 is provided on the light-shielding layer 109. On the insulating layer 182, the light-emitting devices 130R, 130G, and 130B are provided.

[0072] 2B shows a top view of the light-shielding layer 109, the conductive layer 170R, the conductive layer 170G, and the conductive layer 170B. As shown in FIGS. 1B and 2B, the conductive layer 170R, the conductive layer 170G, and the conductive layer 170B are provided so as to be embedded in the light-shielding layer 109 and the insulating layer 182. The conductive layer 170R reaches the conductive layer 250R, the conductive layer 170G reaches the conductive layer 250G, and the conductive layer 170B reaches the conductive layer 250B.

[0073] Although multiple light-shielding layers 109 are shown in the cross-sectional views of Figure 1B and the like, when the display device 100 is viewed from above, the light-shielding layers 109 are connected as one layer as shown in Figure 2B. In other words, the display device 100 can be configured to have one light-shielding layer 109. Note that the display device 100 can also be configured to have multiple light-shielding layers 109 that are separated from one another. The same applies to the insulating layer 182.

[0074] The conductive layer 170R has a region in contact with the upper surface of the conductive layer 250R and is connected to the conductive layer 250R. Furthermore, a pixel electrode 111R of the light-emitting device 130R is provided on the conductive layer 170R. The pixel electrode 111R has a region in contact with the upper surface of the conductive layer 170R and is connected to the conductive layer 170R. In other words, the conductive layer 250R is connected to the pixel electrode 111R via the conductive layer 170R. The conductive layer 170R can be said to be a plug that connects the conductive layer 250R and the pixel electrode 111R.

[0075] The conductive layer 170G has a region in contact with the upper surface of the conductive layer 250G and is connected to the conductive layer 250G. Furthermore, a pixel electrode 111G of the light-emitting device 130G is provided on the conductive layer 170G. The pixel electrode 111G has a region in contact with the upper surface of the conductive layer 170G and is connected to the conductive layer 170G. In other words, the conductive layer 250G is connected to the pixel electrode 111G via the conductive layer 170G. The conductive layer 170G can be said to be a plug that connects the conductive layer 250G and the pixel electrode 111G.

[0076] The conductive layer 170B has a region in contact with the upper surface of the conductive layer 250B and is connected to the conductive layer 250B. Furthermore, the pixel electrode 111B of the light-emitting device 130B is provided on the conductive layer 170B. The pixel electrode 111B has a region in contact with the upper surface of the conductive layer 170B and is connected to the conductive layer 170B. In other words, the conductive layer 250B is connected to the pixel electrode 111B via the conductive layer 170B. The conductive layer 170B can be said to be a plug that connects the conductive layer 250B and the pixel electrode 111B.

[0077] The light-shielding layer 109 is provided so as to cover the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B. It is more preferable that the light-shielding layer 109 has regions in contact with the upper surfaces and side surfaces of the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B.

[0078] The conductive layer 250R, the conductive layer 250G, and the conductive layer 250B can be formed, for example, in the same process. Note that, hereinafter, the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B may be collectively referred to as the conductive layer 250. Similarly, the conductive layer 170R, the conductive layer 170G, and the conductive layer 170B may be formed, for example, in the same process. Note that, hereinafter, the conductive layer 170R, the conductive layer 170G, and the conductive layer 170B may be collectively referred to as the conductive layer 170.

[0079] When light from outside the display device 100 (external light) or light emitted from a light-emitting device is incident on a transistor included in the layer 101, the electrical characteristics of the transistor may fluctuate. It is preferable that the amount of light incident on the transistor, particularly the semiconductor layer of the transistor, is small. By providing the light-shielding layer 109 on the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B, external light and light emitted from the light-emitting device are prevented from entering the transistor, thereby preventing light-induced fluctuations in the electrical characteristics of the transistor. This allows for a highly reliable transistor and a highly reliable display device. Furthermore, since light is prevented from entering the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B, the generation of light reflected or scattered by wiring or the like included in the layer 101 (also referred to as stray light) can be suppressed. This allows for a display device with high contrast. Furthermore, a display device with high visibility can be obtained.

[0080] One of the indicators for evaluating the reliability of a transistor is a Gate Bias Temperature (GBT) stress test, in which the transistor is held in a state in which an electric field is applied to the gate. Among these, a test in which a positive potential (positive bias) is applied to the gate relative to the source potential and drain potential and the transistor is held at a high temperature is called a Positive Bias Temperature Stress (PBTS) test, and a test in which a negative potential (negative bias) is applied to the gate and the transistor is held at a high temperature is called a Negative Bias Temperature Stress (NBTS) test. The PBTS test and the NBTS test performed under light irradiation are called the PBTIS (Positive Bias Temperature Illumination Stress) test and the NBTIS (Negative Bias Temperature Illumination Stress) test, respectively. In particular, it is preferable that a transistor applied to a region where light can be incident has small fluctuations in electrical characteristics under light irradiation and high reliability against light. The reliability against light can be evaluated, for example, by the amount of fluctuation in threshold voltage in the NBTIS test. Note that the fluctuation in threshold voltage due to application of a negative bias under light irradiation is sometimes referred to as negative bias light degradation.

[0081] The light-shielding layer 109 preferably has low light transmittance. Note that low light transmittance may be referred to as high light-shielding properties. The light-shielding layer 109 may be made of a material that does not easily transmit light. The light-shielding layer 109 may be made of one or more of a material with high light absorption, a material with high light reflectance, and a material with high light absorption and reflectance.

[0082] The light-shielding layer 109 is preferably made of an insulating material. When a conductive material is used for the light-shielding layer, the larger the area of ​​the light-shielding layer, the larger the parasitic capacitance that occurs between the light-shielding layer and the pixel electrodes (pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B), the conductive layer 250, etc. This may limit the area in which the light-shielding layer is provided. By using an insulating material for the light-shielding layer 109, the light-shielding layer can be formed widely over the surface to be formed (preferably over the entire surface to be formed), thereby improving the light-shielding effect.

[0083] The light-shielding layer 109 can be made of an organic material. The light-shielding layer 109 can be made of one or more of a pigment-containing material, a dye-containing material, a light-absorbing resin (e.g., a polyimide resin), and a resin that can be used for a color filter (hereinafter also referred to as a color filter material). Examples of pigments include carbon black. Examples of color filter materials include red resin, green resin, and blue resin. The light-shielding layer 109 can be made of a colored resin, and red, brown, or black resin is preferred. Furthermore, the light-shielding layer 109 is preferably made of a resin layered or mixed with two or more color filter materials, as this enhances light-shielding properties. In particular, mixing three or more color filter materials can produce a black or near-black resin. A layer containing a resin may be referred to as a resin layer.

[0084] The light-shielding layer 109 can have a single layer structure or a laminated structure. The light-shielding layer 109 can have, for example, a laminated structure of layers containing the above-mentioned materials. The light-shielding layer 109 can have, for example, a laminated structure of a red resin layer and a black resin layer, a laminated structure of a green resin layer and a black resin layer, a laminated structure of a blue resin layer and a black resin layer, a laminated structure of a red resin layer and a blue resin layer, a laminated structure of a red resin layer and a green resin layer, or a laminated structure of a green resin layer and a blue resin layer.

[0085] 3A and 3B show an example of a configuration in which the light-shielding layer 109 has a laminated structure. Figures 3A and 3B show a configuration in which the light-shielding layer 109 has a two-layer structure consisting of a light-shielding layer 109a and a light-shielding layer 109b on the light-shielding layer 109a. For example, a black resin can be used for the light-shielding layer 109a, and a red resin can be used for the light-shielding layer 109b. Alternatively, a red resin can be used for the light-shielding layer 109a, and a green resin can be used for the light-shielding layer 109b. Alternatively, a green resin can be used for the light-shielding layer 109a, and a red resin can be used for the light-shielding layer 109b.

[0086] Here, when a material containing a component (hereinafter also referred to as a contaminant component) that may be a source of contamination in a film-forming apparatus for a layer (here, insulating layer 182) provided on light-shielding layer 109 is used for light-shielding layer 109, it is preferable for light-shielding layer 109 to have a stacked structure. Specifically, it is preferable to use a material containing a contaminant component for light-shielding layer 109a and a material with a low content of contaminant components for light-shielding layer 109b. It is more preferable that the content of contaminant components in light-shielding layer 109b is lower than the content of contaminant components in light-shielding layer 109a. This reduces the content of contaminant components on the surface of light-shielding layer 109, thereby suppressing contamination of a film-forming apparatus for a layer (here, insulating layer 182) provided on light-shielding layer 109.

[0087] The thickness relationship between the layers constituting the light-shielding layer 109 is not particularly limited. As shown in FIG. 3A, the thickness of the light-shielding layer 109b can be made thicker than the thickness of the light-shielding layer 109a. Alternatively, as shown in FIG. 3B, the thickness of the light-shielding layer 109a can be made thicker than the thickness of the light-shielding layer 109b. Alternatively, the thickness of the light-shielding layer 109b and the thickness of the light-shielding layer 109a can be made the same or approximately the same. The thickness of each layer constituting the light-shielding layer can be determined depending on the transmittance of the material used.

[0088] Although the light-shielding layer 109 has a single-layer structure or a stacked structure of two layers in this example, one embodiment of the present invention is not limited thereto. The light-shielding layer 109 may have a stacked structure of three or more layers.

[0089] When the light-shielding layer 109 contains particles (e.g., carbon black), large particle sizes can result in large unevenness on the surface of the light-shielding layer 109. Large unevenness on the surface of the light-shielding layer 109 can reduce the coverage of a layer (e.g., the insulating layer 182) provided on the light-shielding layer 109, potentially causing defects such as discontinuities or voids in the layer. The size of the particles contained in the light-shielding layer 109 is preferably 200 nm or less, more preferably 100 nm or less, even more preferably 80 nm or less, and even more preferably 50 nm or less. By setting the size of the particles contained in the light-shielding layer 109 within the above-mentioned range, the surface unevenness of the light-shielding layer 109 can be reduced, thereby improving the coverage of the layer provided on the light-shielding layer 109 and preventing defects such as discontinuities or voids in the layer.

[0090] In this specification and the like, the particle size refers to the maximum value of the straight line connecting two points on the outer contour of the particle. The size of the particles contained in the light-shielding layer 109 can be confirmed using a scanning electron microscope (SEM) image, a transmission electron microscope (TEM) image, a scanning transmission electron microscope (STEM) image, or the like. When the acquired image contains multiple particles, it is more preferable that the maximum size of each particle is within the aforementioned range. The size of the particles contained in the light-shielding layer 109 is not limited to the aforementioned range.

[0091] Depending on the material used for the light-shielding layer 109, although the light-shielding property is high, the surface unevenness of the light-shielding layer 109 may become large. In such a case, it is preferable to form the light-shielding layer 109 into a laminated structure. For example, the light-shielding layer 109a may be made of a material having a higher light-shielding property than the light-shielding layer 109b. The light-shielding layer 109b provided on the light-shielding layer 109a may be made of a material having a higher flatness than the light-shielding layer 109a. This can increase the light-shielding property of the light-shielding layer 109 and also increase the flatness of the surface of the light-shielding layer 109. Furthermore, as shown in FIG. 3A , by making the thickness of the light-shielding layer 109b thicker than the thickness of the light-shielding layer 109a, the surface of the light-shielding layer 109 can be made even flatter. If the surface unevenness of the layer using a black resin becomes large, it is preferable to provide the light-shielding layer 109b using a resin other than black on the light-shielding layer 109a using a black resin. For example, it is possible to suitably use a black resin for the light-shielding layer 109a and a red resin for the light-shielding layer 109b.

[0092] The light-shielding layer 109 preferably has low transmittance, particularly for light with energy equal to or greater than the band gap of the semiconductor material of the semiconductor layer of the transistor provided in the layer 101, i.e., light with a short wavelength. This more effectively suppresses fluctuations in the electrical characteristics of the transistor, resulting in a more reliable display device. For example, when the band gap of the semiconductor material of the semiconductor layer is 3.1 eV, the light-shielding layer 109 preferably has low transmittance for light with energy equal to or greater than 3.1 eV (wavelength of approximately 400 nm or less). For example, red, green, brown, and black resins have low transmittance for light with a short wavelength, and therefore are particularly suitable for use as the light-shielding layer 109.

[0093] The light-emitting device 130R has a pixel electrode 111R on an insulating layer 182, an island-shaped layer 113R on the pixel electrode 111R, a common layer 114 on the layer 113R, and a common electrode 115 on the common layer 114. In the light-emitting device 130R, the layer 113R and the common layer 114 can be collectively referred to as an EL layer.

[0094] The light-emitting device 130G has a pixel electrode 111G on an insulating layer 182, an island-shaped layer 113G on the pixel electrode 111G, a common layer 114 on the layer 113G, and a common electrode 115 on the common layer 114. In the light-emitting device 130G, the layer 113G and the common layer 114 can be collectively referred to as an EL layer.

[0095] The light-emitting device 130B has a pixel electrode 111B on an insulating layer 182, an island-shaped layer 113B on the pixel electrode 111B, a common layer 114 on the layer 113B, and a common electrode 115 on the common layer 114. In the light-emitting device 130B, the layer 113B and the common layer 114 can be collectively referred to as an EL layer.

[0096] In this specification and the like, among the EL layers included in the light-emitting devices, layers provided in an island shape for each light-emitting device are referred to as layer 113B, layer 113G, or layer 113R, and a layer shared by a plurality of light-emitting devices is referred to as common layer 114. Note that in this specification and the like, the layer 113R, layer 113G, and layer 113B may be referred to as an island-shaped EL layer or an EL layer formed in an island shape, without including the common layer 114.

[0097] The layers 113R, 113G, and 113B are spaced apart from one another. By providing an island-shaped EL layer for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. This prevents unintended light emission due to crosstalk, and realizes a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0098] The pixel electrodes (pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B) that function as a pair of electrodes of the light-emitting device and the common electrode 115 can be made of metals, alloys, electrically conductive compounds, mixtures thereof, or the like, as appropriate. Specific examples of such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, as well as alloys containing appropriate combinations of these metals. Other examples of such materials include indium tin oxide (In—Sn oxide, also referred to as ITO), In—Si—Sn oxide (ITSO), indium zinc oxide (In—Zn oxide, also referred to as IZO (registered trademark)), and In—W—Zn oxide. Examples of the material include aluminum-containing alloys (aluminum alloys), such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and silver-containing alloys, such as an alloy of silver and magnesium and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC).Other examples of the material include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium), rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0099] Of the pair of electrodes that a light-emitting device has, one electrode functions as an anode and the other electrode functions as a cathode. In the following, an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode will be described.

[0100] The pixel electrodes 111R, 111G, and 111B may be formed in the same process. In the following description, the pixel electrodes 111R, 111G, and 111B may be collectively referred to as pixel electrodes 111.

[0101] A conductive layer 135R may be provided between the pixel electrode 111R and the layer 113R. A conductive layer 135G may be provided between the pixel electrode 111G and the layer 113G. A conductive layer 135B may be provided between the pixel electrode 111B and the layer 113B.

[0102] The conductive layers 135R, 135G, and 135B may be formed in the same process, for example. Note that, hereinafter, the conductive layers 135R, 135G, and 135B may be collectively referred to as the conductive layer 135.

[0103] The conductive layer 135R, the conductive layer 135G, and the conductive layer 135B can each be formed using, for example, an oxide conductor. Examples of oxide conductors include indium oxide, zinc oxide, In—Sn oxide (ITO), In—Zn oxide (also referred to as IZO (registered trademark)), In—W oxide, In—W—Zn oxide, In—Ti oxide, In—Ti—Sn oxide, In—Sn—Si oxide (also referred to as ITO containing silicon, ITSO), zinc oxide doped with gallium, In—Ga—Zn oxide (also referred to as IGZO), and In—Sn—Zn oxide (also referred to as ITZO (registered trademark)). In particular, oxide conductors containing indium are preferable because of their high conductivity. The conductive layer 135R, the conductive layer 135G, and the conductive layer 135B can suitably use, for example, one or more of In—Sn oxide (ITO), In—Si—Sn oxide (ITSO), In—Zn oxide (IZO (registered trademark)), In—Ga—Zn oxide (IGZO), and In—Sn—Zn oxide (ITZO (registered trademark)).

[0104] The surfaces of the conductive layers 135R, 135G, and 135B are preferably highly flat. This improves the coverage of layers (e.g., layers 113R, 113G, and 113B) formed on the conductive layers 135R, 135G, and 135B, thereby preventing defects such as discontinuities or voids in the layers. When using a material with a composition that easily forms a polycrystalline structure for the conductive layer 135, it is preferable to include an element that inhibits crystallization. This prevents the conductive layer 135 from becoming a polycrystalline structure, allowing for a more flat surface. For example, compared to indium tin oxide (ITO), indium tin oxide containing silicon (ITSO) is less likely to become a polycrystalline structure and has a high surface flatness, making it suitable for use as the conductive layer 135. When ITSO is used, the silicon content (the ratio of the number of silicon atoms to the sum of the ratios of the numbers of silicon, indium, and tin atoms) is preferably 1% or more and 20% or less, more preferably 3% or more and 20% or less, even more preferably 3% or more and 15% or less, and even more preferably 5% or more and 15% or less.

[0105] The conductive layers 135R, 135G, and 135B are preferably made of a material that is transparent to visible light. The pixel electrodes 111R, 111G, and 111B are preferably made of a material that is reflective to visible light. The conductive layers 135R, 135G, and 135B function as transmissive electrodes, while the pixel electrodes 111R, 111G, and 111B function as reflective electrodes. Furthermore, by using a material that is transmissive to visible light for the common electrode 115, the common electrode 115 can function as a transmissive electrode. Alternatively, the common electrode 115 preferably functions as a semi-transmissive / semi-reflective electrode. This allows the light-emitting device to have a micro-optical resonator (microcavity) structure, causing light from the light-emitting layer to resonate between the two electrodes, thereby enhancing the light emitted from the light-emitting device. The conductive layers 135R, 135G, and 135B can function as optical adjustment layers. In this case, it is preferable to set the thickness of these conductive layers so that the optical path length is such that the light emitted by each of the layers 113R, 113G, and 113B is intensified. In the semi-transmissive / semi-reflective electrode, the reflective electrode is sometimes referred to as a pixel electrode or a common electrode, and the transparent electrode is sometimes referred to as an optical adjustment layer, but it can also be said that the transparent electrode (optical adjustment layer) functions as a pixel electrode or a common electrode.

[0106] For example, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B can each have a stacked structure of a first titanium film, an aluminum film on the first titanium film, and a second titanium film on the aluminum film. The conductive layer 135R, the conductive layer 135G, and the conductive layer 135B can each have a single-layer structure of an ITSO film. An aluminum film has high light reflectivity and is suitable as a reflective electrode. On the other hand, if an aluminum film comes into contact with an oxide conductor film (e.g., an ITSO film), electrolytic corrosion may occur. Therefore, it is preferable to provide a titanium film between the aluminum film and the oxide conductor film.

[0107] Although a structure example in which the conductive layers 135R, 135G, and 135B are provided is shown here, one embodiment of the present invention is not limited to this. The display device may have a structure in which the conductive layers 135R, 135G, and 135B are not provided. In the case where the conductive layer 135 is not provided, the layer 113 is provided in contact with the pixel electrode 111.

[0108] The insulating layer 182 can be one or more of an insulating layer containing an inorganic material (hereinafter also referred to as an inorganic insulating layer) and an insulating layer containing an organic material (hereinafter also referred to as an organic insulating layer). Examples of inorganic insulating layers that can be used include inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film. Examples of materials that can be used for the inorganic insulating layer include oxides, nitrides, oxynitrides, and nitride oxides. Examples of oxides include silicon oxide, aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, cerium oxide, gallium zinc oxide, and hafnium aluminate. Examples of nitrides include silicon nitride and aluminum nitride. Examples of oxynitrides include silicon oxynitride, aluminum oxynitride, gallium oxynitride, yttrium oxynitride, and hafnium oxynitride. Examples of nitride oxides include silicon nitride oxide and aluminum nitride oxide. Examples of materials that can be used for the organic insulating layer include acrylic resin and polyimide resin.

[0109] When the top surface of the insulating layer 182 is planarized by a chemical mechanical polishing (CMP) method, an inorganic insulating layer can be suitably used as the insulating layer 182 .

[0110] For example, an inorganic material containing silicon can be suitably used for the insulating layer 182. The insulating layer 182 preferably contains silicon and oxygen. For example, silicon oxide can be suitably used for the insulating layer 182.

[0111] The insulating layer 182 can have a single-layer structure or a laminated structure. When the insulating layer 182 has a laminated structure, it preferably has one or more inorganic insulating layers. The insulating layer 182 can also have a laminated structure of an inorganic insulating layer and an organic insulating layer. The insulating layer 182 can have a laminated structure of, for example, an organic insulating layer and an inorganic insulating layer on the organic insulating layer. When the top surface of the insulating layer 182 is planarized using a CMP method, an inorganic insulating layer can be suitably used as the uppermost layer of the insulating layer 182. Note that the uppermost layer of the insulating layer 182 can also be an organic insulating layer.

[0112] In this specification and the like, an oxynitride refers to a material having a composition in which oxygen is contained in a larger amount than nitrogen, and a nitride oxide refers to a material having a composition in which nitrogen is contained in a larger amount than oxygen.

[0113] The insulating layer 182 functions as an etching stopper when forming the light-emitting devices 130R, 130G, and 130B. The insulating layer 182 functions as an etching stopper when forming, for example, the pixel electrodes 111R, 111G, and 111B, the conductive layers 135R, 135G, and 135B, the layers 113R, 113G, and 113B, and the mask layers 118R, 118G, and 118B. By providing the insulating layer 182 on the light-shielding layer 109, it is possible to prevent the light-shielding layer 109 from being etched during the formation of these elements, thereby preventing the thickness of the light-shielding layer 109 from becoming thin. This improves the light-shielding properties of the light-shielding layer 109.

[0114] For the insulating layer 182, it is preferable to use a material that is highly resistant to the formation of the pixel electrodes 111R, 111G, 111B, the conductive layers 135R, 135G, 135B, the layers 113R, 113G, 113B, the mask layers 118R, 118G, and 118B, specifically, a material that has a large etching selectivity with respect to the pixel electrodes 111R, 111G, 111B, the conductive layers 135R, 135G, 135B, the layers 113R, 113G, 113B, the mask layers 118R, 118G, and 118B.

[0115] The conductive layers 170R, 170G, and 170B, which function as plugs, are preferably made of a metal element selected from aluminum, chromium, copper, silver, gold, platinum, zinc, tantalum, nickel, titanium, iron, cobalt, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium, lanthanum, etc., or an alloy containing the above-mentioned metal element or an alloy combining the above-mentioned metal elements. As the alloy containing the above-mentioned metal element, a nitride of the alloy or an oxide of the alloy can be used. For example, tantalum nitride, titanium nitride, tungsten, nitride containing titanium and aluminum, nitride containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxide containing strontium and ruthenium, oxide containing lanthanum and nickel, etc. are preferably used. Polycrystalline silicon containing an impurity element such as phosphorus, or a silicide (e.g., nickel silicide) can also be used.

[0116] Nitrogen-containing conductive materials such as tantalum nitride, titanium nitride, molybdenum nitride, tungsten nitride, ruthenium nitride, tantalum and aluminum nitride, or titanium and aluminum nitride, oxygen-containing conductive materials such as ruthenium oxide, strontium and ruthenium oxide, or lanthanum and nickel oxide, and materials containing metal elements such as titanium, tantalum, or ruthenium are preferred because they are resistant to oxidation, have the function of suppressing oxygen diffusion, or maintain low electrical resistance even when absorbing oxygen. Examples of oxygen-containing conductive materials include indium oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide (also referred to as ITO), indium tin oxide containing titanium oxide, silicon-doped indium tin oxide (also referred to as ITSO), indium zinc oxide (also referred to as IZO (registered trademark)), and indium zinc oxide containing tungsten oxide.

[0117] Conductive materials based on tungsten, copper, or aluminum are preferred because they have high conductivity.

[0118] The conductive layer 170 can have a single-layer structure or a stacked-layer structure. For example, the conductive layer 170 can have a stacked-layer structure in which the above-described material containing a metal element and a conductive material containing oxygen are combined. Alternatively, the conductive layer 170 can have a stacked-layer structure in which the above-described material containing a metal element and a conductive material containing nitrogen are combined. Alternatively, the conductive layer 170 can have a stacked-layer structure in which the above-described material containing a metal element, a conductive material containing oxygen, and a conductive material containing nitrogen are combined.

[0119] Layers formed after the light-shielding layer 109 are formed at a temperature lower than the heat-resistant temperature of the light-shielding layer 109. For example, when the insulating layer 182 is formed after the light-shielding layer 109, the insulating layer 182 is formed at a temperature lower than the heat-resistant temperature of the light-shielding layer 109. To form the insulating layer 182, for example, a sputtering method, an ALD method (including a thermal ALD method and a PEALD method), a chemical vapor deposition (CVD) method, or a vacuum deposition method can be used. Alternatively, a wet film formation method can be used. Similarly, when the conductive layers 170R, 170G, and 170B are formed after the light-shielding layer 109, the conductive layers 170R, 170G, and 170B are formed at a temperature lower than the heat-resistant temperature of the light-shielding layer 109.

[0120] It should be noted that when forming the pixel electrodes 111R, 111G, 111B, the conductive layers 135R, 135G, 135B, the layers 113R, 113G, 113B, the mask layers 118R, 118G, and 118B, a portion of the insulating layer 182 may be removed, and a recess may be formed in the insulating layer 182.

[0121] A layer 113R is provided on the pixel electrode 111R, the conductive layer 135R, and the insulating layer 182. The layer 113R has portions that protrude beyond the ends of the pixel electrode 111R and the conductive layer 135R. The layer 113R preferably has regions in contact with the side surfaces of the pixel electrode 111R, the upper and side surfaces of the conductive layer 135R, and the upper surface of the insulating layer 182. Furthermore, the ends of the layer 113R preferably contact the upper surface of the insulating layer 182. By providing the layer 113R not only on the pixel electrode 111R but also on the insulating layer 182, the area of ​​the layer 113R can be increased. This allows the area of ​​the light-emitting region of the light-emitting device 130R to be increased, resulting in a display device with a high aperture ratio.

[0122] A layer 113G is provided on the pixel electrode 111G, the conductive layer 135G, and the insulating layer 182. The layer 113G has portions that protrude beyond the ends of the pixel electrode 111G and the conductive layer 135G. The layer 113G preferably has regions in contact with the side surfaces of the pixel electrode 111G, the upper and side surfaces of the conductive layer 135G, and the upper surface of the insulating layer 182. Furthermore, the ends of the layer 113G preferably contact the upper surface of the insulating layer 182. By providing the layer 113G not only on the pixel electrode 111G but also on the insulating layer 182, the area of ​​the layer 113G can be increased. This allows the area of ​​the light-emitting region of the light-emitting device 130G to be increased, resulting in a display device with a high aperture ratio.

[0123] A layer 113B is provided on the pixel electrode 111B, the conductive layer 135B, and the insulating layer 182. The layer 113B has portions that protrude beyond the ends of the pixel electrode 111B and the conductive layer 135B. The layer 113B preferably has regions in contact with the side surfaces of the pixel electrode 111B, the upper and side surfaces of the conductive layer 135B, and the upper surface of the insulating layer 182. The ends of the layer 113B preferably contact the upper surface of the insulating layer 182. By providing the layer 113B not only on the pixel electrode 111B but also on the insulating layer 182, the area of ​​the layer 113B can be increased. This allows the area of ​​the light-emitting region of the light-emitting device 130B to be increased, resulting in a display device with a high aperture ratio.

[0124] The semiconductor material used for the semiconductor layer of the transistor provided in the layer 101 is not particularly limited. For example, a semiconductor made of an element or a compound semiconductor can be used. Examples of semiconductors made of an element include silicon and germanium. Examples of compound semiconductors include gallium arsenide and silicon germanium. Other examples of compound semiconductors include organic semiconductors, nitride semiconductors, and oxide semiconductors (OS: oxide semiconductor). Note that these semiconductor materials may contain impurities as dopants.

[0125] As a semiconductor material, for example, silicon can be used. Examples of silicon include single crystal silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon. Examples of polycrystalline silicon include low temperature polysilicon (LTPS). A transistor using amorphous silicon in a channel formation region can be formed on a large glass substrate and manufactured at low cost. A transistor using polycrystalline silicon in a channel formation region has high field-effect mobility and can operate at high speed. Furthermore, a transistor using microcrystalline silicon in a channel formation region has higher field-effect mobility and can operate at high speed than a transistor using amorphous silicon.

[0126] The semiconductor material preferably includes a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor properties. When a metal oxide is used for the semiconductor layer, the semiconductor layer can be referred to as a metal oxide layer. The band gap of the metal oxide used for the semiconductor layer is preferably 2.0 eV or more, more preferably 2.5 eV or more.

[0127] A transistor using an oxide semiconductor (hereinafter referred to as an OS transistor) has extremely high field-effect mobility compared to a transistor using amorphous silicon. Furthermore, an OS transistor has an extremely low off-state current and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0128] As described above, it is more preferable that the light-shielding layer 109 has a low transmittance for light with a short wavelength. For example, it is more preferable that the transmittance for light emitted from the blue light-emitting device 130 is low. In particular, the transmittance of the light-shielding layer 109 for light with a wavelength in the range of 300 nm to 550 nm is preferably 50% or less, more preferably 40% or less, even more preferably 20% or less, even more preferably 10% or less, and even more preferably 5% or less. By setting the transmittance of the light-shielding layer 109 within the above range, light is prevented from entering the transistor, resulting in a highly reliable transistor and a highly reliable display device. Furthermore, the generation of stray light can be suppressed, resulting in a display device with high contrast and high visibility. Note that the transmittance of the light-shielding layer 109 is not limited to the above range.

[0129] The light transmittance of the light-shielding layer 109 can be adjusted by the material used for the light-shielding layer 109 and the thickness of the light-shielding layer 109. If the thickness T109 of the light-shielding layer 109 is thin, the light transmittance will be high, and if the thickness T109 is thick, the productivity of the display device may be reduced. The thickness T109 can be the shortest distance between the upper surface of the conductive layer 250 (conductive layer 250R in FIG. 2A ) and the upper surface of the light-shielding layer 109 in a cross-sectional view.

[0130] The thickness T109 of the light-shielding layer 109 is preferably 200 nm or more and 2000 nm or less, more preferably 200 nm or more and 1500 nm or less, even more preferably 400 nm or more and 1500 nm or less, even more preferably 400 nm or more and 1200 nm or less, and even more preferably 600 nm or more and 1200 nm or less. By setting the thickness T109 within the above-mentioned range, it is possible to reduce the light transmittance and increase the productivity of the display device. Note that the thickness T109 is not limited to the above-mentioned range. For example, the thickness T109 can be reduced by using a material with low transmittance for the light-shielding layer 109.

[0131] Although the cross-sectional views of FIG. 1B and the like show a configuration example in which the top surface of the light-shielding layer 109 is flat, one embodiment of the present invention is not limited thereto. For example, unevenness may occur on the top surface of the light-shielding layer 109 depending on the unevenness of the surface on which the light-shielding layer 109 is formed. The top surface of the light-shielding layer 109 preferably has a flat or gently sloping shape. This can improve the coverage of layers (e.g., the insulating layer 182) provided on the light-shielding layer 109 and prevent discontinuities in these layers. Furthermore, by improving the flatness of the top surface of the insulating layer 182, which is the surface on which the light-emitting device 130 is formed, uneven luminance is reduced, resulting in a display device with high display quality.

[0132] Note that the pixel electrodes 111R, 111G, and 111B may have tapered ends. This may improve the coverage of layers (e.g., the layer 113R) provided on the pixel electrodes 111R, 111G, and 111B, and may prevent voids from forming in the layers. Similarly, the conductive layers 135R, 135G, and 135B may have tapered ends.

[0133] The pixel electrode 111R is provided on the conductive layer 170R and the insulating layer 182. The pixel electrode 111R has a region in contact with the top surface of the conductive layer 170R and a region in contact with the top surface of the insulating layer 182. The pixel electrode 111G is provided on the conductive layer 170G and the insulating layer 182. The pixel electrode 111G has a region in contact with the top surface of the conductive layer 170G and a region in contact with the top surface of the insulating layer 182. The pixel electrode 111B is provided on the conductive layer 170B and the insulating layer 182. The pixel electrode 111B has a region in contact with the top surface of the conductive layer 170B and a region in contact with the top surface of the insulating layer 182. FIG. 2C is a top view of FIG. 2B with the pixel electrodes 111R, 111G, and 111B added. As shown in FIG. 2C, in top view, it is preferable that the pixel electrode 111R includes the conductive layer 170R, the pixel electrode 111G includes the conductive layer 170G, and the pixel electrode 111B includes the conductive layer 170B.

[0134] The height of the upper surface of the insulating layer 182 in the region in contact with the pixel electrode 111R preferably coincides with or approximately coincides with the height of the upper surface of the conductive layer 170R. Similarly, the height of the upper surface of the insulating layer 182 in the region in contact with the pixel electrode 111G preferably coincides with or approximately coincides with the height of the upper surface of the conductive layer 170G. The height of the upper surface of the insulating layer 182 in the region in contact with the pixel electrode 111B preferably coincides with or approximately coincides with the height of the upper surface of the conductive layer 170B. This improves the flatness of the surfaces on which the pixel electrodes 111R, 111G, and 111B are formed. This reduces unevenness in brightness, resulting in a display device with high display quality.

[0135] An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices. In the cross-sectional views such as FIG. 1B , a plurality of insulating layers 125 and insulating layers 127 are shown, but when the display device 100 is viewed from above, the insulating layers 125 and 127 are each connected to one another. In other words, the display device 100 can be configured to have one insulating layer 125 and one insulating layer 127. Note that the display device 100 can be configured to have a plurality of insulating layers 125 that are separated from one another, and a plurality of insulating layers 127 that are separated from one another.

[0136] A display device according to one embodiment of the present invention can be a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, or a dual-emission type that emits light to both sides.

[0137] Light emitting device 130R emits red (R) light, light emitting device 130G emits green (G) light, and light emitting device 130B emits blue (B) light.

[0138] As the light-emitting device, for example, an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode) is preferably used. Examples of the light-emitting material contained in the light-emitting device include a fluorescent material (fluorescent material), a phosphorescent material (phosphorescent material), a material exhibiting thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material), and an inorganic compound (quantum dot material, etc.). Furthermore, an LED such as a micro LED (light-emitting diode) can also be used as the light-emitting device.

[0139] The light emitting device can emit light of infrared, red, green, blue, cyan, magenta, yellow, white, etc. The color purity can be improved by providing the light emitting device with a microcavity structure.

[0140] In FIG. 1B , an insulating layer (also referred to as a partition, bank, or spacer) covering the edges of the pixel electrode 111R and the conductive layer 135R is not provided between the pixel electrode 111R and the conductive layer 135R and the layer 113R. Similarly, an insulating layer covering the edges of the pixel electrode 111G and the conductive layer 135G is not provided between the pixel electrode 111G and the conductive layer 135G and the layer 113G. An insulating layer covering the edges of the pixel electrode 111G and the conductive layer 135B is not provided between the pixel electrode 111B and the conductive layer 135B and the layer 113B. This allows the distance between adjacent light-emitting devices to be extremely narrow. This allows a high-definition or high-resolution display device to be obtained. Furthermore, a mask for forming the insulating layer is not required, thereby reducing the manufacturing cost of the display device.

[0141] By using a structure in which an insulating layer covering an edge of the pixel electrode is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light from the EL layer can be efficiently extracted. Furthermore, the display device of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images in the display device can be improved. For example, in the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. The above viewing angle can be applied to both the vertical and horizontal directions.

[0142] The light-emitting device of this embodiment can have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having a plurality of light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0143] Layer 113R, layer 113G, and layer 113B each include at least a light-emitting layer. Layer 113R includes a light-emitting layer that emits red light, layer 113G includes a light-emitting layer that emits green light, and layer 113B includes a light-emitting layer that emits blue light. In other words, layer 113R includes a light-emitting material that emits red light, layer 113G includes a light-emitting material that emits green light, and layer 113B includes a light-emitting material that emits blue light.

[0144] When a light-emitting device having a tandem structure is used, it is preferable that layer 113R has a structure having a plurality of light-emitting units that emit red light, layer 113G has a structure having a plurality of light-emitting units that emit green light, and layer 113B has a structure having a plurality of light-emitting units that emit blue light. It is preferable to provide a charge generation layer between the light-emitting units of each light-emitting device.

[0145] Layer 113R, layer 113G, and layer 113B can each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0146] For example, the layer 113R, the layer 113G, and the layer 113B may each have, from the layer 101 side, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order. Also, an electron blocking layer may be provided between the hole transport layer and the light-emitting layer. Also, a hole blocking layer may be provided between the electron transport layer and the light-emitting layer. Also, an electron injection layer may be provided on the electron transport layer.

[0147] For example, the layer 113R, the layer 113G, and the layer 113B may each have, from the layer 101 side, an electron injection layer, an electron transport layer, an emitting layer, and a hole transport layer in this order. A hole blocking layer may be provided between the electron transport layer and the emitting layer. An electron blocking layer may be provided between the hole transport layer and the emitting layer. A hole injection layer may be provided on the hole transport layer.

[0148] Each of the layers 113R, 113G, and 113B preferably includes a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer). Alternatively, each of the layers 113R, 113G, and 113B preferably includes a light-emitting layer and a carrier block layer (hole block layer or electron block layer). Alternatively, each of the layers 113R, 113G, and 113B preferably includes a light-emitting layer, a carrier block layer, and a carrier transport layer on the carrier block layer. The carrier transport layer is more preferably provided on the light-emitting layer. The carrier block layer is more preferably provided on the light-emitting layer. If the surfaces of the layers 113R, 113G, and 113B are exposed to the atmosphere during the manufacturing process of the display device, providing one or both of the carrier transport layer and the carrier block layer on the light-emitting layer prevents the light-emitting layer from being exposed to the outermost surface, thereby preventing the light-emitting layer from being exposed to the atmosphere. This reduces damage to the light-emitting layer, thereby improving the reliability of the light-emitting device.

[0149] The heat resistance temperature of the compounds contained in the layers 113R, 113G, and 113B is preferably 100° C. or higher and 180° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. For example, the glass transition point (Tg) of these compounds is preferably 100° C. or higher and 180° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.

[0150] In particular, it is preferable that the functional layer provided on the light-emitting layer has a high heat resistance temperature. Furthermore, it is even more preferable that the functional layer provided on and in contact with the light-emitting layer has a high heat resistance temperature. The high heat resistance of the functional layer makes it possible to effectively protect the light-emitting layer and reduce damage to the light-emitting layer.

[0151] It is preferable that the light-emitting layer has a high heat resistance temperature, which can prevent the light-emitting layer from being damaged by heat, resulting in a decrease in light-emitting efficiency and a shortened lifespan.

[0152] The light-emitting layer contains a light-emitting substance (also referred to as a light-emitting material, a light-emitting compound, a guest material, or the like) and a substance other than the light-emitting substance (for example, a host material). Since the light-emitting layer contains a larger amount of the host material than the light-emitting substance, the glass transition point (Tg) of the host material can be used as an index of the heat resistance temperature of the light-emitting layer.

[0153] Layer 113R, layer 113G, and layer 113B can have, for example, a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer.

[0154] The second light-emitting unit preferably has an emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the emitting layer. Alternatively, the second light-emitting unit preferably has an emitting layer and a carrier block layer (hole block layer or electron block layer) on the emitting layer. Alternatively, the second light-emitting unit preferably has an emitting layer, a carrier block layer on the emitting layer, and a carrier transport layer on the carrier block layer. If the surface of the second light-emitting unit is exposed to the atmosphere during the manufacturing process of the display device, providing one or both of the carrier transport layer and the carrier block layer on the emitting layer prevents the emitting layer from being exposed on the outermost surface, thereby preventing the emitting layer from being exposed to the atmosphere. This reduces damage to the emitting layer and improves the reliability of the light-emitting device. Note that when three or more emitting units are included, the uppermost emitting unit preferably has an emitting layer and one or both of the carrier transport layer and the carrier block layer on the emitting layer.

[0155] The common layer 114 may include, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 is shared by the light-emitting devices 130R, 130G, and 130B.

[0156] 4A to 4D are cross-sectional views taken along dashed line Y1-Y2 in FIG. 1A. FIGS. 4A to 4D show the connection portion 140 and its vicinity. The common electrode 115 is shared by the light-emitting devices 130R, 130G, and 130B. The common electrode 115, which is shared by the plurality of light-emitting devices, is connected to a conductive layer 123 provided in the connection portion 140. The conductive layer 123 is provided on the insulating layer 182. The conductive layer 123 can be formed, for example, in the same process as the pixel electrodes 111R, 111G, and 111B.

[0157] A conductive layer 250p is provided on the substrate 103. The conductive layer 250p corresponds to, for example, the wiring of the layer 101. A light-shielding layer 109 is provided on the conductive layer 250p, and an insulating layer 182 is provided on the light-shielding layer 109. The conductive layer 250p has a region in contact with a conductive layer 170p embedded in the light-shielding layer 109 and the insulating layer 182, and is connected to the conductive layer 170p. A conductive layer 123 is provided on the conductive layer 170p and the insulating layer 182. The conductive layer 170p has a region in contact with the conductive layer 123, and is connected to the conductive layer 123. The conductive layer 123 is connected to the conductive layer 250p via the conductive layer 170p. A common electrode 115 is provided on the conductive layer 123. Note that a configuration in which the conductive layer 170p and the conductive layer 250p are not provided is also possible.

[0158] By providing the light-shielding layer 109 also in the connection portion 140, light can be further prevented from entering the transistors included in the layer 101. This can suppress fluctuations in the electrical characteristics of the transistors (e.g., photodegradation due to negative bias current). Furthermore, by providing the light-shielding layer also in a region where a driver circuit (not shown) is provided, light can be further prevented from entering the transistors included in the driver circuit. The display device according to one embodiment of the present invention has a structure in which the light-shielding layer 109 is provided not only in the pixel portion but also in portions other than the pixel portion (e.g., a connection portion, a sealing portion, a driver circuit, and the like). This can further suppress the influence of external light and light emitted from the light-emitting device. This can suppress fluctuations in the electrical characteristics of the transistors included in the display device, resulting in a highly reliable display device. Furthermore, since generation of stray light can be suppressed, a display device with high contrast and high visibility can be obtained.

[0159] Note that a configuration may be adopted in which the light-shielding layer 109 is not provided in a portion overlapping with a region where no transistor is provided. For example, when no transistor is provided in a region overlapping with the connection portion 140 of the layer 101 or in the vicinity thereof, a configuration may be adopted in which the light-shielding layer 109 is not provided in the connection portion 140 or in the vicinity thereof.

[0160] 4A shows a configuration in which a conductive layer 135p is provided on the conductive layer 123, a common layer 114 is provided on the conductive layer 135p, and a common electrode 115 is provided on the common layer 114. The conductive layer 135p can be formed in the same process as the conductive layers 135R, 135G, and 135B, for example.

[0161] The connection portion 140 preferably has an area where the conductive layer 123, the conductive layer 135p, the common layer 114, and the common electrode 115 overlap in this order without any other layers in between. By increasing the area where these conductive layers contact each other, the electrical resistance of the connection portion 140 can be reduced.

[0162] 4A shows an example in which the conductive layer 123 and the common electrode 115 are connected to each other via the conductive layer 135p and the common layer 114. Note that the connection portion 140 may be configured without one or both of the conductive layer 135p and the common layer 114.

[0163] 4B , the connection portion 140 can have a region where the conductive layer 123, the conductive layer 135p, and the common electrode 115 overlap in this order without any other layers therebetween. For example, by using a mask for defining a film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the regions where the common layer 114 and the common electrode 115 are formed can be changed.

[0164] As shown in FIG. 4C , the connection portion 140 may have a region where the conductive layer 123, the common layer 114, and the common electrode 115 overlap in this order without any other layers in between. Alternatively, as shown in FIG. 4D , the connection portion 140 may have a region where the conductive layer 123 and the common electrode 115 overlap in this order without any other layers in between. That is, the conductive layer 123 and the common electrode 115 may be directly connected. For example, after forming the conductive films that will become the conductive layers 135R, 135G, and 135B, the conductive films in the connection portion 140 may be removed. If the material used for the conductive layer 135p has a higher electrical resistivity than the material used for the conductive layer 123, not providing the conductive layer 135p in the connection portion 140 is preferable because it reduces the electrical resistance in the connection portion 140.

[0165] 4A to 4D show a structure example in which the mask layer (here, the mask layer 118B) has a region in contact with one or both of the conductive layer 123 and the conductive layer 135p. Note that one embodiment of the present invention is not limited thereto. As shown in FIGS. 5A to 5D , a structure in which the mask layer does not have a region in contact with either the conductive layer 123 or the conductive layer 135p is also possible. The insulating layer 125 has regions in contact with the top surface of the insulating layer 182, the side surface of the conductive layer 123, the side surface of the conductive layer 123, and part of the top surface of the conductive layer 123. An insulating layer 127 is provided over the insulating layer 125. For the connection between the conductive layer 123 and the common electrode 115 shown in FIG. 5A , the description related to FIG. 4A can be referred to. Similarly, the description related to FIG. 4B can be referred to for the structure shown in FIG. 5B , the description related to FIG. 4C can be referred to for the structure shown in FIG. 5C , and the description related to FIG. 4D can be referred to for the structure shown in FIG. 5D .

[0166] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0167] 1B and the like show a structure in which the light-shielding layer 109 is provided in contact with the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B, but one embodiment of the present invention is not limited to this. A structure in which the light-shielding layer 109 is not in contact with the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B may also be used. FIG. 6A shows a structure in which an insulating layer 188 is provided between the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B and the light-shielding layer 109. FIG. 6B shows an enlarged view of a portion of the cross-sectional view shown in FIG. 6A.

[0168] The insulating layer 188 is provided in contact with the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B. The insulating layer 188 has regions in contact with the upper surface and side surfaces of the conductive layer 250R, the upper surface and side surfaces of the conductive layer 250G, and the upper surface and side surfaces of the conductive layer 250B.

[0169] The insulating layer 188 can be made of any of the materials listed for the insulating layer 182. Alternatively, the insulating layer 188 preferably functions as a barrier layer. By providing the insulating layer 188 functioning as a barrier layer, the components contained in the light-shielding layer 109 can be prevented from diffusing toward the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B. This prevents impurities from diffusing into the transistors included in the layer 101, thereby improving the reliability of the transistors. Therefore, a highly reliable display device can be obtained. The insulating layer 188 can have a single-layer structure or a stacked-layer structure. For example, it can have a stacked-layer structure of layers containing the above-mentioned materials.

[0170] The barrier layer can be formed using, for example, one or more of an oxide containing one or both of aluminum and hafnium, an oxide containing magnesium, an oxide containing gallium, a nitride containing silicon, and a nitride oxide containing silicon. Typically, the barrier layer can be formed using, for example, one or more of aluminum oxide, hafnium oxide, hafnium aluminate, magnesium oxide, gallium oxide, gallium zinc oxide, silicon nitride, and silicon nitride oxide. The insulating layer 188 can be formed using, for example, a silicon nitride film.

[0171] In this specification and the like, a barrier layer refers to a layer having barrier properties. Furthermore, in this specification and the like, the term "barrier properties" refers to a function of making it difficult for a target substance to diffuse, thereby suppressing the permeation of the substance through the film (also referred to as low permeability). Alternatively, the term "barrier properties" refers to a function of capturing or fixing (also referred to as gettering) the target substance.

[0172] Note that since the insulating layer 188 is formed before the light-shielding layer 109, the insulating layer 188 can be formed at a temperature equal to or higher than the heat-resistant temperature of the light-shielding layer 109. Forming the insulating layer 188 at a high temperature is preferable because it allows the formation of a denser film with higher barrier properties.

[0173] As shown in FIGS. 7A to 7D , an insulating layer 188 can also be provided on the conductive layer 250p. Providing the insulating layer 188 so as to cover the conductive layer 250p can prevent components contained in the light-shielding layer 109 from diffusing toward the conductive layer 250p. This can further prevent impurities from diffusing into the transistor included in the layer 101. The description of FIG. 4A can be referred to for the connection between the conductive layer 123 and the common electrode 115 shown in FIG. 7A . Similarly, the description of FIG. 4B can be referred to for the structure shown in FIG. 7B , the description of FIG. 4C can be referred to for the structure shown in FIG. 7C , and the description of FIG. 4D can be referred to for the structure shown in FIG. 7D . Note that although FIGS. 7A to 7D illustrate a structure in which a mask layer (e.g., the mask layer 118B) does not have a region in contact with either the conductive layer 123 or the conductive layer 135p, one embodiment of the present invention is not limited thereto. The mask layer can have a region in contact with one or both of the conductive layer 123 and the conductive layer 135p (see FIGS. 4A to 4D).

[0174] The island-shaped layers 113R, 113G, and 113B can be formed by photolithography, for example, without using a fine metal mask. A film to become the layer 113R is formed, and the film is processed by photolithography to form the island-shaped layer 113R. The same applies to the layers 113G and 113B. This allows the layers 113R, 113G, and 113B to be formed in fine sizes, resulting in a high-resolution display device. The display device of one embodiment of the present invention can have a resolution of, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0175] When using a fine metal mask, it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm. However, by using photolithography, the spacing between adjacent light-emitting devices, adjacent EL layers, or adjacent pixel electrodes can be reduced to, for example, less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less in processes on glass substrates. Furthermore, by using an exposure device for LSIs, the spacing between adjacent light-emitting devices, adjacent EL layers, or adjacent pixel electrodes can be reduced to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less in processes on Si wafers. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, enabling the aperture ratio to approach 100%. For example, in a display device of one embodiment of the present invention, the aperture ratio can be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0176] Increasing the aperture ratio of a display device can improve the reliability of the display device. More specifically, when the lifetime of a display device using an organic EL device and having an aperture ratio of 10% is taken as the reference, the lifetime of a display device having an aperture ratio of 20% (i.e., an aperture ratio twice that of the reference) is approximately 3.25 times longer, and the lifetime of a display device having an aperture ratio of 40% (i.e., an aperture ratio four times that of the reference) is approximately 10.6 times longer. As such, as the aperture ratio increases, the current density flowing through the organic EL device required to obtain the same display can be reduced, thereby improving the lifetime of the display device. In the display device of one embodiment of the present invention, the aperture ratio can be increased, thereby improving the display quality of the display device. Furthermore, as the aperture ratio of the display device increases, an excellent effect is achieved, such as a significant improvement in the reliability (particularly the lifetime) of the display device.

[0177] In FIG. 1B , a mask layer 118R is located over the layer 113R included in the light-emitting device 130R, a mask layer 118G is located over the layer 113G included in the light-emitting device 130G, and a mask layer 118B is located over the layer 113B included in the light-emitting device 130B. The mask layer 118B is a mask layer that was provided in contact with the upper surface of the layer 113B when processing the layer 113B, and a mask layer 118B is a mask layer that was provided in contact with the upper surface of the layer 113B when processing the layer 113B. Similarly, the mask layer 118G is a mask layer that was provided during the formation of the layer 113G, and the mask layer 118R is a mask layer that was provided during the formation of the layer 113R, and a ... display device of one embodiment of the present invention. The same material can be used for any two or all of the mask layers 118R, 118G, and 118B, or different materials can be used. In the following, the mask layer 118R, the mask layer 118G, and the mask layer 118B may be collectively referred to as the mask layer 118.

[0178] In this specification and the like, different materials refer to materials in which some or all of the constituent elements are different, or materials in which the constituent elements are the same but the composition is different.

[0179] One end of the mask layer 118R (the end opposite the light-emitting region, the outer end) is aligned or approximately aligned with the end of the layer 113R, and the other end of the mask layer 118R is located on the layer 113R. Here, the other end of the mask layer 118R (the end on the light-emitting region side, the inner end) preferably overlaps the region where the layer 113R and the pixel electrode 111R contact. In this case, the other end of the mask layer 118R is likely to be formed on a substantially flat surface of the layer 113R. The same applies to the mask layers 118G and 118B. Furthermore, the mask layer 118 remains, for example, between the top surface of the island-shaped EL layer (layer 113R, layer 113G, or layer 113B) and the insulating layer 125.

[0180] The side surfaces of the layers 113R, 113G, and 113B are covered with the insulating layer 125. The insulating layer 127 overlaps the side surfaces of the layers 113R, 113G, and 113B with the insulating layer 125 interposed therebetween.

[0181] By covering part of the top surface and the side surfaces of the layers 113R, 113G, and 113B with at least one of the insulating layer 125, the insulating layer 127, and the mask layer 118, the common layer 114 (or the common electrode 115) is prevented from contacting the side surfaces of the layers 113R, 113G, and 113B, thereby preventing short circuits in the light-emitting device, thereby improving the reliability of the light-emitting device.

[0182] The EL layer preferably has a first region, which is a light-emitting region (also referred to as a light-emitting area), and a second region located outside the first region. The second region can also be referred to as a dummy region or a dummy area. The first region is located between the pixel electrode and the common electrode. The first region is covered with a mask layer during the manufacturing process of the display device, and is therefore subject to minimal damage. Therefore, a light-emitting device with high light-emitting efficiency and a long lifetime can be realized. On the other hand, the second region includes the edge of the EL layer and its vicinity, and may be damaged by exposure to plasma during the manufacturing process of the display device. By not using the second region as a light-emitting region, variation in the characteristics of the light-emitting device can be suppressed.

[0183] Although the structure in which the island-shaped layers 113R, 113G, and 113B are formed by photolithography is shown here, one embodiment of the present invention is not limited to this. For example, the island-shaped layers 113R, 113G, and 113B can also be formed by using a fine metal mask.

[0184] 1B, the layers 113R, 113G, and 113B are all shown with the same thickness, but this is not a limitation of one embodiment of the present invention. The layers 113R, 113G, and 113B may have different thicknesses. For example, it is preferable to set the thickness so that the optical path length increases the intensity of light emitted from the layers 113R, 113G, and 113B. This allows a microcavity structure to be realized, and the color purity of each light-emitting device to be improved.

[0185] The insulating layer 125 preferably contacts the side surfaces of the layers 113R, 113G, and 113B (see the end of the layer 113R, the end of the layer 113G, and the areas surrounded by dashed lines in FIG. 2A ). Having the insulating layer 125 in contact with the layers 113R, 113G, and 113B can prevent the layers 113R, 113G, and 113B from peeling off. The insulating layer 125 adheres closely to the layers 113B, 113G, or 113R, thereby fixing or bonding the adjacent layers 113B and the like by the insulating layer 125. This can improve the reliability of the light-emitting device. Furthermore, the manufacturing yield of the light-emitting device can be increased.

[0186] 1B , the insulating layers 125 and 127 cover part of the top surfaces and both the side surfaces of the layers 113R, 113G, and 113B, which can further prevent peeling of the EL layer and improve the reliability of the light-emitting device and the manufacturing yield of the light-emitting device.

[0187] The insulating layer 127 is provided on the insulating layer 125 so as to fill a recessed portion of the insulating layer 125. The insulating layer 127 can be configured to overlap with a portion of the top surface and side surfaces of the layer 113R, the layer 113G, and the layer 113B via the insulating layer 125. The insulating layer 127 preferably covers at least a portion of the side surface of the insulating layer 125.

[0188] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces large unevenness in height on the surface on which layers (e.g., a carrier injection layer, a common electrode, etc.) are formed on the island-shaped layers, thereby making the surface flatter, thereby improving the coverage of the carrier injection layer, the common electrode, etc.

[0189] The common layer 114 and the common electrode 115 are provided over the layer 113R, the layer 113G, the layer 113B, the mask layer 118, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step is generated between a region where the pixel electrode and the island-shaped EL layer are provided and a region where the pixel electrode and the island-shaped EL layer are not provided (a region between light-emitting devices). The display device of one embodiment of the present invention includes the insulating layer 125 and the insulating layer 127, which can flatten the step and improve the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to disconnection can be suppressed. Furthermore, the step can suppress an increase in electrical resistance due to a local thinning of the common electrode 115.

[0190] The upper surface of the insulating layer 127 preferably has a highly flat shape, but may also have a convex portion, a convex curved surface, a concave curved surface, or a concave portion. For example, the upper surface of the insulating layer 127 preferably has a highly flat convex curved surface with a large radius of curvature.

[0191] Next, examples of materials for the insulating layer 125 and the insulating layer 127 will be described.

[0192] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 can have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) as the insulating layer 125, it is possible to form an insulating layer 125 that has few pinholes and has an excellent function of protecting the EL layer. The insulating layer 125 may have a stacked structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0193] The insulating layer 125 preferably functions as a barrier layer against at least one of water and oxygen, and preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0194] The insulating layer 125 has a function as a barrier layer or a gettering function, which can suppress the intrusion of impurities (typically, at least one of water and oxygen) that can diffuse into each light-emitting device from the outside. This configuration makes it possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0195] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, by reducing the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, or preferably both of them.

[0196] The same material can be used for insulating layer 125 and mask layers 118B, 118G, and 118R. In this case, the boundary between insulating layer 125 and any of mask layers 118B, 118G, and 118R may become unclear and indistinguishable. Therefore, any of mask layers 118B, 118G, and 118R and insulating layer 125 may be recognized as a single layer. In other words, one layer may be provided in contact with a portion of the top surface and side surfaces of layers 113R, 113G, and 113B, and insulating layer 127 may be observed to cover at least a portion of the side surfaces of the single layer.

[0197] The insulating layer 127 provided on the insulating layer 125 has the function of flattening large unevenness of the insulating layer 125 formed between adjacent light-emitting devices. In other words, the insulating layer 127 has the effect of improving the flatness of the surface on which the common electrode 115 is formed.

[0198] An insulating layer containing an organic material can be suitably used as the insulating layer 127. It is preferable to use a photosensitive resin as the organic material, and for example, it is preferable to use a photosensitive resin composition containing an acrylic resin. Note that in this specification and the like, the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0199] The insulating layer 127 can be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Alternatively, the insulating layer 127 can be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Alternatively, a photoresist can be used as the photosensitive resin. Either a positive-type material or a negative-type material can be used as the photosensitive resin.

[0200] The insulating layer 127 can also be made of a material that absorbs visible light. By having the insulating layer 127 absorb light emitted from the light-emitting device, it is possible to prevent light from leaking from the light-emitting device to an adjacent light-emitting device through the insulating layer 127. This can improve the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, it is possible to reduce the weight and thickness of the display device. The insulating layer 127 can also be made of the materials listed for the light-shielding layer 109.

[0201] A mask layer 118R is provided in contact with a portion of the upper surface of layer 113R, a mask layer 118G is provided in contact with a portion of the upper surface of layer 113G, and a mask layer 118B is provided in contact with a portion of the upper surface of layer 113B. An insulating layer 125 is provided in contact with the upper and side surfaces of mask layer 118R, mask layer 118G, mask layer 118B, and the upper surface of insulating layer 182. An insulating layer 127 is provided in contact with the upper and side surfaces of insulating layer 125. Furthermore, insulating layer 127 overlaps, via insulating layer 125, with a portion of the upper surface and side surfaces of layer 113R, a portion of the upper surface and side surfaces of layer 113G, and a portion of the upper surface and side surfaces of layer 113B. A common layer 114 is provided covering the layer 113R, the mask layer 118R, the layer 113G, the mask layer 118G, the layer 113B, the mask layer 118B, the insulating layer 125, and the insulating layer 127, and a common electrode 115 is provided on the common layer 114.

[0202] The insulating layer 127 is formed in a region between two island-shaped EL layers (for example, a region between the layer 113R and the layer 113G). At this time, at least a portion of the insulating layer 127 is located between adjacent EL layers. The provision of the insulating layer 127 improves coverage of the island-shaped EL layers and the common layer 114 and common electrode 115 formed on the insulating layer 127, thereby preventing these layers from being separated and from having locally thin portions.

[0203] In a cross-sectional view, the upper surface of the insulating layer 127 preferably has a convex curved shape. The convex curved shape of the upper surface of the insulating layer 127 preferably has a shape that bulges gently toward the center. Furthermore, it is preferable that the convex curved portion in the center of the upper surface of the insulating layer 127 has a shape that is continuously connected toward the edge. By forming the insulating layer 127 in this shape, the common layer 114 and the common electrode 115 can be formed with high coverage over the entire insulating layer 127.

[0204] By providing the insulating layers 127 and 125, the common layer 114 and the common electrode 115 can be formed with high coverage. Furthermore, it is possible to prevent the common layer 114 and the common electrode 115 from being divided and from being locally thin. Therefore, it is possible to prevent poor connection between the light-emitting devices in the common layer 114 and the common electrode 115 due to the divided portions and an increase in electrical resistance due to the locally thin portions. This allows the display device according to one embodiment of the present invention to have improved display quality.

[0205] It is preferable to provide a protective layer 131 on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. The reliability of the light emitting device can be improved by providing the protective layer 131. The protective layer 131 can have a single layer structure or a multilayer structure.

[0206] There is no limitation on the conductivity of the protective layer 131. The protective layer 131 can be formed using at least one of an insulating film, a semiconductor film, and a conductive film.

[0207] The protective layer 131 has an inorganic film, which prevents the common electrode 115 from being oxidized, suppresses impurities (moisture, oxygen, etc.) from entering the light-emitting device, and suppresses deterioration of the light-emitting device, thereby improving the reliability of the display device.

[0208] For the protective layer 131, for example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used. Specific examples of these inorganic insulating films are as given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0209] The protective layer 131 may be formed using an inorganic film containing In—Sn oxide (ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0210] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0211] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0212] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include the organic insulating materials that can be used for the insulating layer 127.

[0213] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0214] Although there are no significant limitations on the material of the substrate 103, it is necessary that the material has at least a heat resistance sufficient to withstand the manufacturing process. For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or a resin substrate can be used as the substrate 103. A semiconductor element can be provided on the substrate 103. The shapes of the semiconductor substrate and the insulating substrate are not particularly limited and can be, for example, circular or rectangular.

[0215] A flexible substrate can be used as the substrate 103, and a display device or the like can be formed directly on the flexible substrate. Alternatively, a peeling layer can be provided between the substrate 103 and the display device or the like. By providing the peeling layer, after forming part or the whole of the display device thereon, it can be separated from the substrate 103 and transferred to another substrate. In this case, the display device or the like can also be transferred to a substrate with poor heat resistance or a flexible substrate.

[0216] The substrate 103 may be formed by laminating an insulating layer on the aforementioned substrate.

[0217] In addition to the light-shielding layer 109, a light-shielding layer can be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members can be arranged on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Surface protection layers such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, and an impact absorbing layer can be arranged on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO ｘ The surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO ｘ ), polyester-based materials, or polycarbonate-based materials can be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0218] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device and realize a flexible display. A polarizing plate can also be used as the substrate 120.

[0219] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can be made of glass having a thickness sufficient to provide flexibility.

[0220] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0221] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0222] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0223] When a film is used as a substrate, the film may absorb water, which may cause changes in shape, such as wrinkles, in the display device. Therefore, it is preferable to use a film with low water absorption as the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0224] The resin layer 122 can be made of various curable adhesives, such as photo-curable adhesives (e.g., ultraviolet curable), reactive curable adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins can also be used. Adhesive sheets, etc., can also be used.

[0225] [Structure Example 2] A modification of Figure 6A is shown in Figure 8A. For a top view of the display device, refer to Figure 1A. Figure 8A shows a structure in which an end of the layer 113R is in contact with the top surface of the conductive layer 135R, an end of the layer 113G is in contact with the top surface of the conductive layer 135G, and an end of the layer 113B is in contact with the top surface of the conductive layer 135B. Figure 8B shows an enlarged view of a portion of the cross-sectional view shown in Figure 8A.

[0226] The pixel electrode 111R and the conductive layer 135R each have a portion that protrudes beyond the end of the layer 113R. In a top view, the pixel electrode 111R and the conductive layer 135R are each provided to encompass the layer 113R. Here, if the layer 113R has a portion that protrudes beyond the end of the pixel electrode 111R and the conductive layer 135R, the step caused by the pixel electrode 111R and the conductive layer 135R may reduce the coverage of the layer 113R, resulting in a thin region in the layer 113R. Furthermore, this region may become a leak path. By providing the pixel electrode 111R and the conductive layer 135R to encompass the layer 113R, the thickness of the layer 113R can be made more uniform. This prevents the layer 113R from having a thin region, thereby suppressing current leakage and resulting in a light-emitting device 130R with high current efficiency. The same applies to the pixel electrode 111G, the conductive layer 135G, the layer 113G, the pixel electrode 111B, the conductive layer 135B, and the layer 113B. Therefore, a display device with high current efficiency can be provided.

[0227] The insulating layer 125 has regions that contact the side surfaces of the pixel electrode 111R, the side surfaces and a portion of the upper surface of the conductive layer 135R, the side surfaces of the pixel electrode 111G, the side surfaces and a portion of the upper surface of the conductive layer 135G, the side surfaces of the pixel electrode 111B, and the side surfaces and a portion of the upper surface of the conductive layer 135B.

[0228] The configurations of the layers 113R, 113G, and 113B shown here can also be applied to other configuration examples.

[0229] For the connection portion 140, please refer to the description of FIGS. 7A to 7D.

[0230] A modification of Fig. 8A is shown in Fig. 9A. For a top view of the display device, see Fig. 1A. Fig. 9A shows a structure in which the display device has an insulating layer 139. Fig. 9B shows an enlarged view of a portion of the cross-sectional view shown in Fig. 9A.

[0231] The insulating layer 139 is provided to cover the edges of the pixel electrode 111R, the conductive layer 135R, the pixel electrode 111G, the conductive layer 135G, the pixel electrode 111B, and the conductive layer 135B. The insulating layer 139 can suppress current leakage between adjacent pixel electrodes 111. Furthermore, because the insulating layer 139 covers the edges of the pixel electrodes 111, current leakage between the edges of the pixel electrodes 111 and the layer 113 can be suppressed. Even if electric field concentration occurs at the upper edges of the pixel electrodes 111, the insulating layer 139 can increase the distance between the upper edges of the pixel electrodes 111 and the layer 113, thereby suppressing the effects of the electric field concentration. In particular, when a tandem structure is used in the light-emitting device 130, the insulating layer 139 can increase the distance between the layer 113 and the upper edges of the pixel electrodes 111, thereby suppressing the occurrence of a leakage path between the charge generating layer and the upper edges of the pixel electrodes 111.

[0232] The insulating layer 139 has regions in contact with the top surface of the insulating layer 182, the side surfaces of the pixel electrode 111, and the side surfaces and part of the top surface of the conductive layer 135. For example, an insulating film to become the insulating layer 139 is formed over the pixel electrode 111, the conductive layer 135, and the insulating layer 182, and then part of the insulating film is removed to form the insulating layer 139. The formation of the insulating layer 139 exposes part of the top surface of the conductive layer 135. The end of the layer 113 is preferably in contact with the top surface of the insulating layer 139. The insulating layer 139 is located between the end of the layer 113 and the pixel electrode 111 and the conductive layer 135. This effectively suppresses current leakage between the end of the pixel electrode 111 and the layer 113. Note that a configuration is also possible in which the insulating layer 139 is in contact with the side surfaces of the pixel electrode 111 and the conductive layer 135, but is not in contact with the top surface of the conductive layer 135.

[0233] The insulating layer 139 can be formed using one or more of an inorganic insulating layer and an organic insulating layer. The insulating layer 139 can be formed using the materials listed for the insulating layer 182. The insulating layer 139 can have a single-layer structure or a stacked-layer structure.

[0234] The insulating layer 125 is provided over the insulating layer 139 and has a region in contact with the insulating layer 139 .

[0235] 10A to 10D are cross-sectional views taken along the dashed dotted line Y1-Y2 in Fig. 1A. As shown in Fig. 10A to 10D, the insulating layer 139 may have a region in contact with one or both of the conductive layer 123 and the conductive layer 135p.

[0236] 10A and 10B , the insulating layer 139 has a region in contact with the side surface of the conductive layer 123 and the side surface and a portion of the upper surface of the conductive layer 135. Furthermore, as shown in FIGS. 10C and 10D , the insulating layer 139 has a region in contact with the side surface and a portion of the upper surface of the conductive layer 123. An insulating layer 125 is provided on the insulating layer 139, and an insulating layer 127 is provided on the insulating layer 125. The description of FIG. 4A can be referred to for the connection between the conductive layer 123 and the common electrode 115 shown in FIG. 10A . Similarly, the description of FIG. 4B can be referred to for the structure shown in FIG. 10B , the description of FIG. 4C can be referred to for the structure shown in FIG. 10D , and the description of FIG. 4D can be referred to for the structure shown in FIG. 10C .

[0237] The insulating layer 139 shown here can also be applied to other configuration examples.

[0238] [Structure Example 3] A modification of FIG. 1B is shown in FIG. 1A. For a top view of the display device, refer to FIG. 1A. In FIG. 11A, the display device includes an insulating layer 184, a layer 259R, a layer 259G, and a layer 259B. FIG. 11B is an enlarged view of a portion of the cross-sectional view shown in FIG. 11A.

[0239] The insulating layer 184 is provided between the light-shielding layer 109 and the insulating layer 182 .

[0240] The insulating layer 184 functions as a barrier layer that prevents components contained in the light-shielding layer 109 from diffusing toward the light-emitting device 130. When a resin is used for the light-shielding layer 109, examples of the components include carbon and hydrogen. By providing the insulating layer 184, which functions as a barrier layer, between the light-shielding layer 109 and the light-emitting device 130, the diffusion of impurities into the light-emitting device 130 is prevented, thereby improving the reliability of the light-emitting device 130. This allows for a highly reliable display device.

[0241] The materials that can be used for the barrier layer are as described above. The insulating layer 184 preferably contains aluminum and oxygen. For example, an aluminum oxide film can be suitably used as the insulating layer 184.

[0242] Layer 259R is provided between light-shielding layer 109 and conductive layer 170R. Layer 259R has regions in contact with the side surfaces of light-shielding layer 109 and conductive layer 170R. Similarly, layer 259G is provided between light-shielding layer 109 and conductive layer 170G. Layer 259G has regions in contact with the side surfaces of light-shielding layer 109 and conductive layer 170G. Layer 259B is provided between light-shielding layer 109 and conductive layer 170B. Layer 259B has regions in contact with the side surfaces of light-shielding layer 109 and conductive layer 170B.

[0243] The layers 259R, 259G, and 259B function as barrier layers that prevent components contained in the light-shielding layer 109 from diffusing toward the light-emitting device 130. The layers 259R, 259G, and 259B can be formed, for example, in the same process. Note that, hereinafter, the layers 259R, 259G, and 259B may be collectively referred to as the layer 259.

[0244] The conductivity of the layers 259R, 259G, and 259B is not particularly limited, and they can be, for example, an insulating layer, a semiconductor layer, or a conductive layer. When the layers 259R, 259G, and 259B are insulating layers, the layers 259R, 259G, and 259B can be made of the materials listed above for the barrier layer. The layers 259R, 259G, and 259B each preferably contain aluminum and oxygen. For example, an aluminum oxide film can be suitably used as the layers 259R, 259G, and 259B. Alternatively, the layers 259R, 259G, and 259B each preferably contain silicon and nitrogen. For example, a silicon nitride film can be suitably used as the layers 259R, 259G, and 259B. Alternatively, the layers 259R, 259G, and 259B can each have a stacked structure containing the above-mentioned materials.

[0245] If layers 259R, 259G, and 259B are not provided, depending on the material used for light-shielding layer 109, the adhesion between conductive layers 170R, 170G, and 170B and the side surfaces of light-shielding layer 109 on which they are formed may be low, which may result in defects in the shape of conductive layers 170R, 170G, and 170B. Furthermore, the defects in the shape of conductive layers 170R, 170G, and 170B may result in poor conduction between conductive layer 250 and pixel electrode 111. By providing layer 259 between conductive layer 170 and light-shielding layer 109, the adhesion between conductive layer 170 and light-shielding layer 109 is improved, making it possible to prevent poor conduction between conductive layer 250 and pixel electrode 111.

[0246] When the insulating layers 184, 259R, 259G, and 259B are formed after the light-shielding layer 109, the insulating layers 184, 259R, 259G, and 259B are formed at a temperature lower than the heat-resistant temperature of the light-shielding layer 109. The insulating layers 184, 259R, 259G, and 259B can be formed by, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, or vacuum evaporation. The ALD method is preferable for forming the insulating layers 184, 259R, 259G, and 259B because it allows for the formation of dense films with high barrier properties even at low temperatures. For example, an aluminum oxide film formed by ALD can be suitably used as the insulating layers 184, 259R, 259G, and 259B.

[0247] 12A shows a top view of the light-shielding layer 109, the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, the layer 259R, the layer 259G, and the layer 259B. As shown in FIGS. 11A and 12A , the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, the layer 259R, the layer 259G, and the layer 259B are provided so as to be embedded in the light-shielding layer 109 and the insulating layer 182. The conductive layer 170R has a region overlapping with the light-shielding layer 109 with the layer 259R interposed therebetween. The conductive layer 170G has a region overlapping with the light-shielding layer 109 with the layer 259G interposed therebetween. The conductive layer 170B has a region overlapping with the light-shielding layer 109 with the layer 259B interposed therebetween.

[0248] 11A , a layer 259R can also be provided between the insulating layer 182 and the insulating layer 184 and the conductive layer 170R. Similarly, a layer 259G can also be provided between the insulating layer 182 and the insulating layer 184 and the conductive layer 170G. A layer 259B can also be provided between the insulating layer 182 and the insulating layer 184 and the conductive layer 170B. For example, a light-shielding film that will become the light-shielding layer 109, a first insulating film that will become the insulating layer 182, and a second insulating film that will become the insulating layer 184 are formed on the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B. A first opening that reaches the conductive layer 250R, a second opening that reaches the conductive layer 250G, and a third opening that reaches the conductive layer 250B are formed in the light-shielding film, the first insulating film, and the second insulating film. A film that will become layers 259R, 259G, and 259B is formed so as to cover the first opening, the second opening, and the third opening. Then, by removing parts of the film, the layers 259R, 259G, and 259B can be formed.

[0249] 12B is a top view of Fig. 12A with pixel electrodes 111R, 111G, and 111B added. As shown in Fig. 12B, in the top view, it is preferred that pixel electrode 111R includes conductive layer 170R and layer 259R, pixel electrode 111G includes conductive layer 170G and layer 259G, and pixel electrode 111B includes conductive layer 170B and layer 259B.

[0250] It is more preferable that the height of the upper surface of the insulating layer 182 in the region in contact with the pixel electrode 111R is the same as or approximately the same as the height of the upper surface of the layer 259R. Similarly, it is more preferable that the height of the upper surface of the insulating layer 182 in the region in contact with the pixel electrode 111G is the same as or approximately the same as the height of the upper surface of the layer 259G. It is more preferable that the height of the upper surface of the insulating layer 182 in the region in contact with the pixel electrode 111B is the same as or approximately the same as the height of the upper surface of the layer 259B. This improves the flatness of the surfaces on which the pixel electrodes 111R, 111G, and 111B are formed. Therefore, unevenness in brightness is reduced, and a display device with high display quality can be obtained.

[0251] The structures of the insulating layer 184, the layer 259R, the layer 259G, and the layer 259B shown here can be applied to other structure examples. Also, a structure in which one or both of the insulating layer 184 and the layer 259 are not provided may be used.

[0252] Cross-sectional views taken along the dashed dotted line Y1-Y2 in FIG. 1A are shown in FIGS. 13A to 13D.

[0253] 13A to 13D , the layer 259p is provided between the light-shielding layer 109 and the insulating layer 182 and the conductive layer 170p. The layer 259p can be formed, for example, in the same process as the layers 259R, 259G, and 259G. For the layer 259p, the description of the layers 259R, 259G, and 259G can be referred to. For the connection between the conductive layer 123 and the common electrode 115, the description of FIGS. 4A to 4D can be referred to, and therefore a detailed description thereof will be omitted.

[0254] 13A to 13D show a structure example in which the mask layer (here, the mask layer 118B) has a region in contact with one or both of the conductive layer 123 and the conductive layer 135p. Note that one embodiment of the present invention is not limited thereto, and a structure in which the mask layer does not have a region in contact with either the conductive layer 123 or the conductive layer 135p can also be used (see FIGS. 5A to 5D ).

[0255] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0256] As shown in FIG. 14A , an insulating layer 188 can be provided between the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B and the light-shielding layer 109. FIG. 14B shows an enlarged view of a portion of the cross-sectional view shown in FIG. 14A . Materials that can be used for the insulating layer 188 are as described above. The insulating layer 188 preferably functions as a barrier layer. By providing the insulating layer 188 functioning as a barrier layer, the components contained in the light-shielding layer 109 can be prevented from diffusing toward the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B. This prevents impurities from diffusing into the transistors included in the layer 101, thereby improving the reliability of the transistors. Therefore, a highly reliable display device can be obtained.

[0257] Note that the structure of the insulating layer 188 shown here can be applied to other structure examples. Also, a structure in which one or more of the insulating layer 188, the insulating layer 184, and the layer 259 are not provided may be used.

[0258] [Structure Example 4] A modification of FIG. 1B is shown in FIG. 1A for a top view of the display device. FIG. 15A shows a structure in which the display device does not include the conductive layer 170R, the conductive layer 170G, and the conductive layer 170B. FIG. 15B shows an enlarged view of a portion of the cross-sectional view shown in FIG. 15A.

[0259] The display device shown in FIG. 15A has conductive layers 105R, 105G, 105B, layers 107R, 107G, 107B, and an insulating layer 186 instead of conductive layers 170R, 170G, 170B, and insulating layer 182.

[0260] A light-shielding layer 109 is provided on the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B, and an insulating layer 186 is provided on the light-shielding layer 109.

[0261] The light-shielding layer 109 has an opening 257R that reaches the conductive layer 250R, an opening 257G that reaches the conductive layer 250G, and an opening 257B that reaches the conductive layer 250B. The openings 257R, 257G, and 257B can be formed in the same process, for example.

[0262] The insulating layer 186 has openings 269R, 269G, and 269B. Opening 269R is provided in a region overlapping with opening 257R. Opening 269G is provided in a region overlapping with opening 257G. Opening 269B is provided in a region overlapping with opening 257B. Note that in FIG. 15A and other figures, opening 257R in the light-shielding layer 109 and opening 269R in the insulating layer 186 are denoted by different reference numerals, but these openings can be collectively referred to as a single opening. Similarly, openings 257G and 269G can be collectively referred to as a single opening. Openings 257B and 269B can be collectively referred to as a single opening. In other words, the light-shielding layer 109 and the insulating layer 186 can be said to have an opening reaching conductive layer 250R, an opening reaching conductive layer 250G, and an opening reaching conductive layer 250B.

[0263] FIG. 16A shows a top view of the light-shielding layer 109, the opening 257R, the opening 257G, the opening 257B, the opening 269R, the opening 269G, and the opening 269B. As shown in FIG. 16A , the top surface shapes of the openings 257R and 269R can be the same or approximately the same. In this specification, the top surface shape of the opening 257R refers to the shape of the top surface edge of the light-shielding layer 109 on the opening 257R side. The top surface shape of the opening 269R refers to the shape of the bottom surface edge of the insulating layer 186 on the opening 269R side. The same applies to the openings 257G and 269G, and the openings 257B and 269B.

[0264] The openings 269R, 269G, and 269B can be formed, for example, in the same process. Alternatively, the openings 257R, 257G, 257B, 269R, 269G, and 269B can also be formed in the same process. A light-shielding film that becomes the light-shielding layer 109 and an insulating film that becomes the insulating layer 186 are formed on the conductive layers 250R, 250G, and 250B. Then, by removing portions of the light-shielding film and the insulating film, the openings 257R, 257G, 257B, 269R, 269G, and 269B can be formed. Forming these openings in the same process allows the top shapes of the openings 257R, 257G, and 257B to coincide or approximately coincide with those of the openings 269R, 269G, and 269B. Furthermore, the productivity of the display device can be improved and the manufacturing cost can be reduced.

[0265] A conductive layer 105R is provided to cover the openings 257R and 269R. The conductive layer 105R contacts the conductive layer 250R in the opening 257R and is connected to the conductive layer 250R. A conductive layer 105G is provided to cover the openings 257G and 269G. The conductive layer 105G contacts the conductive layer 250G in the opening 257G and is connected to the conductive layer 250G. A conductive layer 105B is provided to cover the openings 257B and 269B. The conductive layer 105B contacts the conductive layer 250B in the opening 257B and is connected to the conductive layer 250B. The conductive layers 105R, 105G, and 105B can be formed, for example, in the same process. In the following description, the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B may be collectively referred to as the conductive layer 105.

[0266] 16B is a top view of Fig. 16A with conductive layers 105R, 105G, and 105B added. As shown in Fig. 16B, in the top view, it is preferred that conductive layer 105R includes openings 257R and 269R, conductive layer 105G includes openings 257G and 269G, and conductive layer 105B includes openings 257B and 269B.

[0267] The conductive layers 105R, 105G, and 105B can each have a single-layer structure or a stacked structure of two or more layers. Materials that can be used for these layers include, for example, one or more of chromium, copper, aluminum, gold, silver, zinc, tantalum, titanium, tungsten, manganese, nickel, iron, cobalt, molybdenum, and niobium, as well as alloys containing one or more of the aforementioned metals. The conductive layers 105R, 105G, and 105B can each be preferably made of a conductive material with low electrical resistivity, including one or more of copper, silver, gold, and aluminum. Copper and aluminum are particularly preferred because of their excellent mass productivity.

[0268] The conductive layer 105R, the conductive layer 105G, and the conductive layer 105B can each include an oxide conductor. Examples of oxide conductors include indium oxide, zinc oxide, In—Sn oxide (ITO), In—Zn oxide (also referred to as IZO (registered trademark)), In—W oxide, In—W—Zn oxide, In—Ti oxide, In—Ti—Sn oxide, In—Sn—Si oxide (also referred to as ITO containing silicon, ITSO), zinc oxide doped with gallium, In—Ga—Zn oxide (also referred to as IGZO), and In—Sn—Zn oxide (also referred to as ITZO (registered trademark)). Oxide conductors containing indium are particularly preferred because of their high conductivity.

[0269] The conductive layer 105R, the conductive layer 105G, and the conductive layer 105B can each have a stacked structure of a conductive film containing the oxide conductor and a conductive film containing a metal or an alloy. By using a conductive film containing a metal or an alloy, wiring resistance can be reduced.

[0270] Each of the conductive layers 105R, 105G, and 105B may be a Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). By using a Cu-X alloy film, the layers can be processed by wet etching, thereby reducing manufacturing costs.

[0271] The conductive layer 105R has recesses at positions overlapping with the openings 257R and 269R. The recesses are filled with the layer 107R. Similarly, the conductive layer 105G has recesses at positions overlapping with the openings 257G and 269G. The recesses are filled with the layer 107G. The conductive layer 105B has recesses at positions overlapping with the openings 257B and 269B. The recesses are filled with the layer 107B.

[0272] 16C is a top view of FIG. 16B with layers 107R, 107G, and 107B added. As shown in FIG. 16C, in the top view, conductive layer 105R preferably includes layer 107R. Similarly, conductive layer 105G preferably includes layer 107G. Conductive layer 105B preferably includes layer 107B.

[0273] The conductivity of the layers 107R, 107G, and 107B is not particularly limited, and they can be, for example, insulating layers, semiconductor layers, or conductive layers. The layers 107R, 107G, and 107B can be made of one or more of an inorganic material and an organic material.

[0274] The layers 107R, 107G, and 107B can be made of an organic material. A photosensitive resin is preferably used as the organic material, and for example, a photosensitive resin composition containing an acrylic resin is preferably used. Note that in this specification, the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0275] Layers 107R, 107G, and 107B may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Layers 107R, 107G, and 107B may be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Photoresist may also be used as the photosensitive resin. Positive or negative materials may be used as the photosensitive resin.

[0276] The layers 107R, 107G, and 107B may be formed in the same process, for example. Note that hereinafter, the layers 107R, 107G, and 107B may be collectively referred to as the layer 107.

[0277] Although the cross-sectional views such as Figure 15A show a configuration in which the center and its vicinity of the top surface of the layer 107 are bulged, i.e., have a convex curved surface, the shape of the top surface of the layer 107 is not particularly limited. The top surface of the layer 107 preferably has a shape with greater flatness. For example, the top surface of the layer 107 can be flat. The top surface of the layer 107 can also have a shape with a convex portion, a concave curved surface, or a concave portion. For example, the top surface of the insulating layer 127 preferably has a convex curved surface with a large radius of curvature and with a high flatness. This improves the coverage of the pixel electrode 111 provided on the layer 107 and the conductive layer 105, thereby preventing defects such as discontinuities or voids in the pixel electrode 111.

[0278] A pixel electrode 111R is provided on the conductive layer 105R and the layer 107R. A pixel electrode 111G is provided on the conductive layer 105G and the layer 107G. A pixel electrode 111B is provided on the conductive layer 105B and the layer 107B.

[0279] Fig. 16D shows a top view of Fig. 16C with pixel electrodes 111R, 111G, and 111B added. As shown in Fig. 16D, in the top view, it is preferable that pixel electrode 111R includes layer 107R, pixel electrode 111G includes layer 107G, and pixel electrode 111B includes layer 107B.

[0280] The layer 107R is surrounded by the pixel electrode 111R and the conductive layer 105R. Furthermore, the pixel electrode 111R and the conductive layer 105R each have a portion that protrudes beyond the edge of the layer 107R. This increases the contact area between the pixel electrode 111R and the conductive layer 105R, thereby reducing the contact resistance between the pixel electrode 111R and the conductive layer 105R. Similarly, in a top view, it is preferable that the pixel electrode 111G encompasses the layer 107G. The layer 107G is surrounded by the pixel electrode 111G and the conductive layer 105G. Furthermore, the pixel electrode 111G and the conductive layer 105G each have a portion that protrudes beyond the edge of the layer 107G. This increases the contact area between the pixel electrode 111G and the conductive layer 105G, thereby reducing the contact resistance between the pixel electrode 111G and the conductive layer 105G. In a top view, it is preferable that the pixel electrode 111B encompasses the layer 107B. The layer 107B is surrounded by the pixel electrode 111B and the conductive layer 105B. The pixel electrode 111B and the conductive layer 105B each have a portion that protrudes beyond the end of the layer 107B. This increases the contact area between the pixel electrode 111B and the conductive layer 105B, thereby reducing the contact resistance between the pixel electrode 111B and the conductive layer 105B.

[0281] A configuration can be adopted in which the edge of the pixel electrode 111R coincides or substantially coincides with the edge of the conductive layer 105R, the edge of the pixel electrode 111G coincides or substantially coincides with the edge of the conductive layer 105G, and the edge of the pixel electrode 111B coincides or substantially coincides with the edge of the conductive layer 105B. For example, a first conductive film that will become the conductive layers 105R, 105G, and 105B is formed. Layers 107R, 107G, and 107B are formed on the first conductive film. A second conductive film that will become the pixel electrodes 111R, 111G, and 111B is formed on the first conductive film, 107R, 107G, and 107B. Then, the first conductive film and the second conductive film can be processed to form the conductive layers 105R, 105G, 105B, pixel electrodes 111R, 111G, and 111B. This allows the edges of the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B to coincide or approximately coincide with the edges of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B. Processing the first conductive film and the second conductive film in the same process can improve the productivity of the display device and reduce manufacturing costs. Note that a configuration can be adopted in which the edges of the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B do not coincide with the edges of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B.

[0282] The conductive layer 105R and the pixel electrode 111R can be preferably made of the same material. Alternatively, if the pixel electrode 111R has a stacked structure, the conductive layer 105R can be made of the same material as one or more layers of the stacked structure. This allows the conductive layer 105R and the pixel electrode 111R to be formed in the same process, thereby improving productivity. For example, the pixel electrode 111R can have a stacked structure of a first titanium film, an aluminum film on the first titanium film, and a second titanium film on the aluminum film. The conductive layer 105R can have a single-layer structure of a third titanium film. The same applies to the conductive layer 105G, the conductive layer 105B, the pixel electrode 111G, and the pixel electrode 111B.

[0283] By filling the recesses caused by openings 257R, 269R, 257G, 269G, 257B, and 269B with layers 107R, 107G, and 107B, the upper surfaces of pixel electrodes 111R, 111G, and 111B provided on the recesses can be made more flat. This allows the areas overlapping with openings 257R, 269R, 257G, 269G, 257B, and 269B to be used as light-emitting regions of the light-emitting device. Therefore, the area of ​​the light-emitting region of the light-emitting device can be increased, resulting in a display device with a high aperture ratio.

[0284] The insulating layer 186 functions as an etching stopper when forming the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The insulating layer 186 functions as an etching stopper when forming, for example, the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, the layer 113R, the layer 113G, the layer 113B, the mask layer 118R, the mask layer 118G, and the mask layer 118B. By providing the insulating layer 186 on the light-shielding layer 109, etching of the light-shielding layer 109 during the formation of these layers can be prevented, thereby preventing the thickness of the light-shielding layer 109 from becoming thin. This improves the light-shielding properties of the light-shielding layer 109.

[0285] The insulating layer 186 can be an insulating layer containing an inorganic material, and the materials listed for the insulating layer 182 can be used for the insulating layer 186.

[0286] For the insulating layer 186, it is preferable to use a material that is highly resistant to the formation of the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, the layer 113R, the layer 113G, the layer 113B, the mask layer 118R, the mask layer 118G, and the mask layer 118B, specifically, a material that has a large etching selectivity with respect to the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, the layer 113R, the layer 113G, the layer 113B, the mask layer 118R, the mask layer 118G, and the mask layer 118B.

[0287] The insulating layer 186 preferably functions as a barrier layer that prevents components contained in the light-shielding layer 109 from diffusing toward the light-emitting device 130. Materials that can be used for the barrier layer are as described above. For example, an inorganic material containing silicon can be preferably used for the insulating layer 186. The insulating layer 186 preferably contains silicon and nitrogen. For example, silicon nitride can be preferably used for the insulating layer 186.

[0288] The insulating layer 186 can be formed after the light-shielding layer 109. The insulating layer 186 is formed at a temperature lower than the heat-resistant temperature of the light-shielding layer 109. The insulating layer 186 can be formed by, for example, a sputtering method, an ALD method (including a thermal ALD method and a PEALD method), a CVD method, or a vacuum deposition method. Alternatively, a wet film formation method can be used.

[0289] The configuration of the insulating layer 186, the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the layer 107R, the layer 107G, and the layer 107B shown here can also be applied to other configuration examples.

[0290] 17A and 17B show an example of a configuration in which the light-shielding layer 109 has a laminated structure. Figures 17A and 17B show a configuration in which the light-shielding layer 109 has a two-layer structure consisting of a light-shielding layer 109a and a light-shielding layer 109b on the light-shielding layer 109a. Since the description of Figures 3A and 3B can be referred to for the light-shielding layer 109 having a laminated structure, detailed description thereof will be omitted.

[0291] Cross-sectional views taken along the dashed dotted line Y1-Y2 in FIG. 1A are shown in FIGS. 18A to 18D.

[0292] 18A to 18D , the insulating layer 186 has an opening 269p, and the light-shielding layer 109 has an opening 257p that reaches the conductive layer 250p. The opening 257p is provided in a region overlapping the opening 269p. The descriptions of the openings 269R, 269G, and 269B can be referenced for the opening 269p, and the descriptions of the openings 257R, 257G, and 257B can be referenced for the opening 257p. A conductive layer 105p is provided to cover the openings 269p and 257p. The conductive layer 105p has a region in contact with the conductive layer 250p and is connected to the conductive layer 250p. The conductive layer 105p can be formed, for example, in the same process as the conductive layers 105R, 105G, and 105B. For the conductive layer 105p, the descriptions regarding the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B can be referred to. A layer 107p is provided on the conductive layer 105p. The layer 107p can be formed, for example, in the same process as the layers 107R, 107G, and 107B. For the layer 107p, the descriptions regarding the layers 107R, 107G, and 107B can be referred to. A conductive layer 123 is provided on the conductive layer 105p and the layer 107p. The conductive layer 123 has a region in contact with the top surfaces of the conductive layer 105p and the layer 107p, and is connected to the conductive layer 105p. That is, the conductive layer 250p is connected to the conductive layer 123 via the conductive layer 105p. Note that a structure in which the conductive layer 105p, the layer 107p, and the conductive layer 250p are not provided is also possible.

[0293] As shown in FIG. 18A , the connection portion 140 preferably has an overlapping region in which the conductive layer 123, the conductive layer 135p, the common layer 114, and the common electrode 115 overlap in this order, without any other layers in between. Alternatively, as shown in FIG. 18B , the connection portion 140 may be configured without the common layer 114. The connection portion 140 may have an overlapping region in which the conductive layer 123, the conductive layer 135p, and the common electrode 115 overlap in this order, without any other layers in between. Alternatively, as shown in FIG. 18C , the connection portion 140 may have an overlapping region in which the conductive layer 123, the common layer 114, and the common electrode 115 overlap in this order, without any other layers in between. Alternatively, as shown in FIG. 18D , the connection portion 140 may have an overlapping region in which the conductive layer 135p and the common layer 114 do not overlap. The connection portion 140 may have a region where the conductive layer 123 and the common electrode 115 overlap in this order without any other layer therebetween. For the connection between the conductive layer 123 and the common electrode 115, please refer to the descriptions of Figures 4A to 4D.

[0294] Alternatively, the connection portion 140 may have a configuration in which the layer 107p is not provided between the conductive layer 123 and the conductive layer 105p. As shown in FIG. 19A , the connection portion 140 may have a region in which the conductive layer 250p, the conductive layer 105p, the conductive layer 123, the conductive layer 135p, the common layer 114, and the common electrode 115 overlap in this order without any other layers in between. Alternatively, as shown in FIG. 19B , the connection portion 140 may have a region in which the conductive layer 250p, the conductive layer 105p, the conductive layer 123, the conductive layer 135p, and the common electrode 115 overlap in this order without any other layers in between. Alternatively, as shown in FIG. 19C , the connection portion 140 may have a region in which the conductive layer 250p, the conductive layer 105p, the conductive layer 123, the common layer 114, and the common electrode 115 overlap in this order without any other layers in between. Alternatively, as shown in FIG. 19D, the connection portion 140 can have a region where the conductive layer 250p, the conductive layer 105p, the conductive layer 123, and the common electrode 115 overlap in this order without any other layers in between.

[0295] 19A to 19D show structures in which the insulating layer 127 is not provided in regions overlapping with the openings 257p and 269p, but one embodiment of the present invention is not limited to this. As shown in FIG. 19E, the insulating layer 127 can also be provided in regions overlapping with the openings 257p and 269p. The end of the insulating layer 127 is preferably located within the opening 257p or the opening 269p. This reduces the unevenness of the surface on which the common electrode 115 is formed, thereby improving the coverage of the common electrode 115. Note that the structure of the insulating layer 127 shown in FIG. 19E can be applied to other structure examples.

[0296] 18A to 18D and 19A to 19E show a structure example in which the mask layer (here, the mask layer 118B) has a region in contact with one or both of the conductive layer 123 and the conductive layer 135p. Note that one embodiment of the present invention is not limited thereto. As shown in FIGS. 20A to 20E , a structure in which the mask layer does not have a region in contact with either the conductive layer 123 or the conductive layer 135p is also possible. The insulating layer 125 has regions in contact with the top surface of the insulating layer 182, the side surface of the conductive layer 123, the side surface of the side surface of the conductive layer 123, and part of the top surface of the conductive layer 123. An insulating layer 127 is provided over the insulating layer 125. For the connection between the conductive layer 123 and the common electrode 115 shown in FIG. 20A , the description of FIG. 18A can be referred to. Similarly, for the configurations shown in Figures 20B and 20E, the description related to Figure 18B can be referred to, for the configuration shown in Figure 20C, the description related to Figure 18C can be referred to, and for the configuration shown in Figure 20D, the description related to Figure 18D can be referred to.

[0297] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0298] Figure 15A and other figures show a configuration in which the end of the light-shielding layer 109 on the opening 257R side and the end of the insulating layer 186 on the opening 269R side are aligned or approximately aligned, the end of the light-shielding layer 109 on the opening 257G side and the end of the insulating layer 186 on the opening 269G side are aligned or approximately aligned, and the end of the light-shielding layer 109 on the opening 257B side and the end of the insulating layer 186 on the opening 269B side are aligned or approximately aligned, but one embodiment of the present invention is not limited to this.

[0299] A modified example of FIG. 15A is shown in FIG. 21A. For a top view of the display device, refer to FIG. 1A. In FIG. 21A, the edge of the light-shielding layer 109 on the opening 257R side does not coincide with the edge of the insulating layer 186 on the opening 269R side, the edge of the light-shielding layer 109 on the opening 257G side does not coincide with the edge of the insulating layer 186 on the opening 269G side, and the edge of the light-shielding layer 109 on the opening 257B side does not coincide with the edge of the insulating layer 186 on the opening 269B side. An enlarged view of a portion of the cross-sectional view shown in FIG. 21A is shown in FIG. 21C. The light-shielding layer 109, the opening 257R, the opening 257G, the opening 257B, the opening 269R, the opening 269G, and the opening 269B are shown in FIG. 21B.

[0300] As shown in Figures 21A and 21B, the light-shielding layer 109 preferably has a region that protrudes beyond the insulating layer 186. As shown in Figure 21C, the width of opening 269R is preferably greater than the width of opening 257R, and opening 269R preferably encompasses opening 257R. Similarly, the width of opening 269G is preferably greater than the width of opening 257G, and opening 269G preferably encompasses opening 257G. The width of opening 269B is preferably greater than the width of opening 257B, and opening 269B preferably encompasses opening 257B. The conductive layers 105R, 105G, and 105B each contact not only the side surfaces of the light-shielding layer 109 but also a portion of the upper surface of the light-shielding layer 109. This reduces the step on the surfaces on which the conductive layers 105R, 105G, and 105B are formed, thereby improving the coverage of the conductive layers 105R, 105G, and 105B.

[0301] Although FIGS. 15A and 21A and the like show a structure in which the insulating layer 186 is in contact with the top surface of the light-shielding layer 109 but is not in contact with the side surface of the light-shielding layer 109, one embodiment of the present invention is not limited to this.

[0302] A modified example of FIGS. 15A and 21A is shown in FIG. 22A. For a top view of the display device, refer to FIG. 1A. FIG. 22A shows a configuration in which the insulating layer 186 is in contact with the top surface and side surfaces of the light-shielding layer 109. FIG. 22B shows an enlarged view of a portion of the cross-sectional view shown in FIG. 22A. FIG. 22C shows a top view of the light-shielding layer 109, openings 257R, 257G, 257B, openings 269R, 269G, and 269B.

[0303] Insulating layer 186 has opening 269R reaching conductive layer 250R, opening 269G reaching conductive layer 250G, and opening 269B reaching conductive layer 250B. Conductive layer 250R contacts conductive layer 105R at opening 269R and is connected to conductive layer 105R. Similarly, conductive layer 250G contacts conductive layer 105G at opening 269G and is connected to conductive layer 105G. Conductive layer 250B contacts conductive layer 105B at opening 269B and is connected to conductive layer 105B. Furthermore, as shown in FIG. 22C , it is preferable that the width of opening 257R is greater than the width of opening 269R, and that opening 257R encompasses opening 269R. Similarly, it is preferable that the width of opening 257G is greater than the width of opening 269G, and that opening 257G encompasses opening 269G. Preferably, the width of opening 257B is greater than the width of opening 269B, and opening 257B encompasses opening 269B. As shown in Fig. 22B, insulating layer 186 may be in contact with a portion of the upper surface of conductive layer 250R, a portion of the upper surface of conductive layer 250G, and a portion of the upper surface of conductive layer 250B. Note that insulating layer 186 may also be in contact with one or more of conductive layer 250R, conductive layer 250G, and conductive layer 250B.

[0304] The conductive layer 105R has a region that overlaps with the light-shielding layer 109 in the opening 257R with the insulating layer 186 interposed therebetween. The conductive layer 105G has a region that overlaps with the light-shielding layer 109 in the opening 257G with the insulating layer 186 interposed therebetween. The conductive layer 105B has a region that overlaps with the light-shielding layer 109 in the opening 257B with the insulating layer 186 interposed therebetween.

[0305] For example, a light-shielding layer 109 having openings 257R, 257G, and 257B is formed, and an insulating film that will become insulating layer 186 is formed so as to cover light-shielding layer 109, openings 257R, 257G, and 257B. Then, by removing a part of the insulating film, insulating layer 186 having openings 269R, 269G, and 269B can be formed.

[0306] Depending on the material used for the light-shielding layer 109, adhesion between the conductive layer 105 and the light-shielding layer 109 may be low, which may result in defects in the shape of the conductive layer 105. By providing an insulating layer 186 between the conductive layer 105 and the light-shielding layer 109 and configuring the conductive layer 105 and the light-shielding layer 109 so that they do not come into contact with each other, it is possible to prevent defects in the shape of the conductive layer 105. Furthermore, by covering the top and side surfaces of the light-shielding layer 109 with the insulating layer 186 that functions as a barrier layer, it is possible to effectively prevent components contained in the light-shielding layer 109 from diffusing toward the light-emitting device 130.

[0307] The configuration of the insulating layer 186 shown here can also be applied to other configuration examples.

[0308] [Configuration Example 5] A modification of Fig. 15A is shown in Fig. 23A. For a top view of the display device, Fig. 1A can be referred to. Fig. 23B shows an enlarged view of a part of the cross-sectional view shown in Fig. 23A.

[0309] The layer 107R has a portion located inside the openings 257R and 269R, as well as a portion in contact with the top surface of a region of the conductive layer 105R that is provided along the top surface of the insulating layer 186. It can also be said that the layer 107R has a region that overlaps with the top surface of the insulating layer 186 via the conductive layer 105R. By providing the layer 107R also on the top surface of the region of the conductive layer 105R that is provided along the top surface of the insulating layer 186, the top surface of the layer 107R becomes flatter, and therefore the top surface of the pixel electrode 111R provided on the layer 107R can be made flatter. Therefore, unevenness in luminance is reduced, resulting in a display device with high display quality.

[0310] Similarly, the layer 107G has portions located inside the openings 257G and 269G, as well as portions in contact with the upper surface of a region of the conductive layer 105G that is provided along the upper surface of the insulating layer 186. It can also be said that the layer 107G has a region that overlaps with the upper surface of the insulating layer 186 through the conductive layer 105G. The layer 107B has portions located inside the openings 257B and 269B, as well as a portion that contacts the upper surface of a region of the conductive layer 105B that is provided along the upper surface of the insulating layer 186. It can also be said that the layer 107B has a region that overlaps with the upper surface of the insulating layer 186 through the conductive layer 105B.

[0311] For top views of the light-shielding layer 109, openings 257R, 257G, 257B, openings 269R, 269G, 269B, and conductive layer 105R, conductive layer 105G, and conductive layer 105B, see FIGS. 16A and 16B. FIG. 24A shows a top view of FIG. 16B with layers 107R, 107G, and 107B added. As shown in FIG. 24A , in the top view, it is preferred that layer 107R encompasses openings 257R and 269R, and conductive layer 105R encompasses layer 107R. Similarly, it is preferred that layer 107G encompasses openings 257G and 269G, and conductive layer 105G encompasses layer 107G. It is preferred that layer 107B encompasses openings 257B and 269B, and conductive layer 105B encompasses layer 107B.

[0312] Fig. 24B shows a top view of Fig. 24A with pixel electrodes 111R, 111G, and 111B added. As shown in Fig. 24B, in the top view, it is preferable that pixel electrode 111R includes layer 107R, pixel electrode 111G includes layer 107G, and pixel electrode 111B includes layer 107B.

[0313] The configurations of the layers 107R, 107G, and 107B shown here can also be applied to other configuration examples.

[0314] 25A to 26 , a lens array 133 can be provided in the display device. The lens array 133 can be provided so as to overlap the light-emitting device. By providing the lens array 133 at a position overlapping the light-emitting device, it is possible to efficiently utilize the light emitted from the light-emitting device. This makes it possible to realize a highly reliable display device.

[0315] 25A and 25B show an example in which a lens array 133 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B via a protective layer 131. By forming the lens array 133 directly on the substrate on which the light-emitting devices are formed, it is possible to improve the accuracy of alignment between the light-emitting devices and the lens array.

[0316] 26 shows an example in which a substrate 120 provided with a lens array 133 is bonded onto a protective layer 131 by a resin layer 122. By providing the lens array 133 on the substrate 120, the temperature of the heat treatment in the formation process can be increased.

[0317] 25B shows an example in which a layer having a planarizing function is used as the protective layer 131, but as shown in FIGS. 25A and 26, the protective layer 131 may have no planarizing function. For example, by using an organic film for the protective layer 131, the upper surface of the protective layer 131 can be made flat. Furthermore, the protective layer 131 shown in FIGS. 25A and 26 can be formed by using, for example, an inorganic film.

[0318] The convex surface of the lens array 133 may be configured to face the substrate 120. Alternatively, the convex surface of the lens array 133 may be configured to face the light-emitting device.

[0319] The lens array 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lenses. Also, a material containing at least one of an oxide and a sulfide can be used for the lenses. For example, a microlens array can be used as the lens array 133. The lens array 133 can be formed directly on a substrate or a light-emitting device. Alternatively, a separately formed lens array can be attached to the light-emitting device.

[0320] As shown in Figures 27A and 27B, a colored layer may be provided in the display device. For example, a colored layer 132R that transmits red light may be provided over the red light-emitting device 130R, a colored layer 132G that transmits green light may be provided over the green light-emitting device 130G, and a colored layer 132B that transmits blue light may be provided over the blue light-emitting device 130B. For example, the colored layer 132R that transmits red light may be used to block unwanted wavelengths of light emitted from the red light-emitting device 130R. This configuration further enhances the color purity of the light emitted from each light-emitting device. Note that while the above description focuses on a red light-emitting device, similar effects can be achieved with the combination of a green light-emitting device 130G and a colored layer 132G, and with the combination of a blue light-emitting device 130B and a colored layer 132B.

[0321] By providing a colored layer overlapping the light-emitting device, external light reflection can be significantly reduced, which is preferable. Furthermore, by having a light-emitting device with a microcavity structure, external light reflection can be further reduced. Thus, by applying either a colored layer or a microcavity structure, or preferably both, external light reflection can be sufficiently suppressed without using an optical component such as a circular polarizer in the display device. By not using a circular polarizer in the display device, attenuation of the light emitted from the light-emitting device can be suppressed, and the light extraction efficiency of the light-emitting device can be increased. This allows the power consumption of the display device to be reduced.

[0322] It is preferable that the colored layers of different colors have overlapping portions. The overlapping portions of the colored layers of different colors can function as light-blocking layers, thereby further reducing the reflection of external light.

[0323] 27A shows an example in which colored layers 132R, 132G, and 132B are provided on light-emitting devices 130R, 130G, and 130B via a protective layer 131. By forming the colored layers 132R, 132G, and 132B directly on the substrate on which the light-emitting devices are formed, the accuracy of alignment between the light-emitting devices and the colored layers can be improved. Furthermore, by positioning the light-emitting devices and the colored layers closer to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable.

[0324] As shown in Figure 27A, the colored layer is preferably provided on a protective layer 131 having a planarizing function. By forming the colored layer on a highly flat surface, it is possible to prevent the colored layer from forming irregularities depending on the surface on which it is formed. This prevents a portion of the light emitted from the light-emitting device from being diffused by the irregularities of the colored layer, thereby improving the display quality of the display device. For example, it is preferable that the protective layer 131 has an inorganic insulating film on the common electrode 115 and an organic insulating film on the inorganic insulating film.

[0325] 27B shows an example in which a substrate 120 provided with colored layers 132R, 132G, and 132B is attached to a protective layer 131 by a resin layer 122. By providing the colored layers 132R, 132G, and 132B on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0326] As shown in Figures 28A to 29, the display device can be provided with both a colored layer and a lens array.

[0327] 28A shows an example in which colored layers 132R, 132G, and 132B are provided on light-emitting devices 130R, 130G, and 130B via a protective layer 131, an insulating layer 134 is provided on the colored layers 132R, 132G, and 132B, and a lens array 133 is provided on the insulating layer 134. By forming the colored layers 132R, 132G, 132B, and lens array 133 directly on the substrate on which the light-emitting devices are formed, it is possible to improve the accuracy of alignment between the light-emitting devices and the colored layers or lens array.

[0328] The insulating layer 134 can be made of either or both of an inorganic insulating film and an organic insulating film. The insulating layer 134 can have a single-layer structure or a multi-layer structure. For example, the insulating layer 134 can be made of a material that can be used for the protective layer 131. Since light emitted from the light-emitting device is extracted through the insulating layer 134, it is preferable that the insulating layer 134 have high transparency to visible light.

[0329] 28A, light emitted from the light-emitting device passes through the colored layer and then passes through the lens array 133 to be extracted to the outside of the display device. By positioning the light-emitting device and the colored layer close to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable. Note that the lens array 133 can be provided on the light-emitting device, and the colored layer can be provided on the lens array 133.

[0330] 28B shows an example in which a substrate 120 provided with colored layers 132R, 132G, 132B, and a lens array 133 is bonded to a protective layer 131 by a resin layer 122. By providing the colored layers 132R, 132G, 132B, and the lens array 133 on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0331] Figure 28B shows an example in which colored layers 132R, 132G, and 132B are provided in contact with the substrate 120, an insulating layer 134 is provided in contact with the colored layers 132R, 132G, and 132B, and a lens array 133 is provided in contact with the insulating layer 134.

[0332] In Figure 28B, light emitted from the light-emitting device passes through the lens array 133, then passes through the colored layer, and is extracted to the outside of the display device. Note that the lens array 133 may be provided in contact with the substrate 120, the insulating layer 134 may be provided in contact with the lens array 133, and the colored layer may be provided in contact with the insulating layer 134. In this case, light emitted from the light-emitting device passes through the colored layer, then passes through the lens array 133, and is extracted to the outside of the display device. Note that, as shown in Figures 28A and 28B, it is preferable to provide an area where two colored layers overlap between the lens array 133 and an adjacent lens array 133. By providing an area where colored layers of different colors overlap, color mixing of the light emitted from the light-emitting device can be suppressed.

[0333] Figure 29 shows an example in which a lens array 133 is provided on light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B via a protective layer 131, and a substrate 120 on which colored layers 132R, 132G, and 132B are provided is bonded to the lens array 133 and the protective layer 131 by a resin layer 122.

[0334] 29 , the lens array 133 may be provided on the substrate 120, and the colored layer may be formed directly on the protective layer 131. In this manner, one of the lens array 133 and the colored layer may be provided on the protective layer 131, and the other may be provided on the substrate 120.

[0335] 28A shows an example in which a layer having a planarizing function is used as the protective layer 131, but as shown in FIGS. 28B and 29, the protective layer 131 may have no planarizing function. For example, by using an organic film for the protective layer 131, the upper surface of the protective layer 131 can be made flat. Furthermore, the protective layer 131 shown in FIGS. 28B and 29 can be formed by using, for example, an inorganic film.

[0336] The configuration of the lens array 133 and the colored layer shown here can also be applied to other configuration examples.

[0337] [Configuration Example 7] Figure 30A shows a top view of a display device 100 different from that shown in Figure 1A. The pixel 110 shown in Figure 30A is composed of four types of subpixels: subpixel 11R, subpixel 11G, subpixel 11B, and subpixel 11S.

[0338] The subpixels 11R, 11G, 11B, and 11S may each have a light-emitting device that emits a different color light. For example, the subpixels 11R, 11G, 11B, and 11S may be subpixels of four colors R, G, B, and W, subpixels of four colors R, G, B, and Y, or subpixels of R, G, B, and IR.

[0339] A display device according to one embodiment of the present invention can include a light-receiving device in a pixel.

[0340] Of the four sub-pixels included in pixel 110 shown in FIG. 30A, three may have a light-emitting device and the remaining one may have a light-receiving device.

[0341] The light receiving device may be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0342] The light-receiving device can detect one or both of visible light and infrared light. When detecting visible light, it can detect one or more of light such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. When detecting infrared light, it is preferable because it enables detection of an object even in a dark place.

[0343] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0344] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0345] The light-receiving device is driven by applying a reverse bias between the pixel electrode and the common electrode, so that it can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0346] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is not formed using a fine metal mask, but is formed by depositing a film that will become the active layer on the entire surface and processing the film. Therefore, the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0347] The sixth embodiment can be referred to for the configuration and materials of the light receiving device.

[0348] Fig. 30B shows a cross-sectional view taken along dashed dotted line X3-X4 in Fig. 30A. Note that Fig. 1B can be referred to for a cross-sectional view taken along dashed dotted line X1-X2 in Fig. 30A, and Fig. 4A, 4B, 13A, 13B, 23A, or 23B can be referred to for a cross-sectional view taken along dashed dotted line Y1-Y2.

[0349] 30B , display device 100 has light-emitting device 130R and light-receiving device 150 provided on layer 101, protective layer 131 provided to cover the light-emitting device and light-receiving device, and substrate 120 bonded together by resin layer 122. In addition, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the region between adjacent light-emitting device and light-receiving device.

[0350] FIG. 30B shows an example in which the light emitting device 130R emits light toward the substrate 120 side, and light is incident on the light receiving device 150 from the substrate 120 side (see light Lem and light Lin).

[0351] The configuration of the light-emitting device 130R is as described above.

[0352] The light-receiving device 150 has a pixel electrode 111S, a layer 113S on the pixel electrode 111S, a common layer 114 on the layer 113S, and a common electrode 115 on the common layer 114. The layer 113S includes at least an active layer.

[0353] A pixel electrode 111S is provided on the insulating layer 182. The pixel electrode 111S has a region in contact with the light-shielding layer 109, the insulating layer 184, and the conductive layer 170S embedded in the insulating layer 182, and is connected to the conductive layer 170S. The conductive layer 170S is in contact with the conductive layer 250S included in the layer 101 and is connected to the conductive layer 250S. In other words, the conductive layer 250S is connected to the pixel electrode 111S through the conductive layer 170S. The conductive layer 250S corresponds to an electrode of a transistor, an electrode of a capacitor, or a wiring. A layer 259S is provided between the light-shielding layer 109, the insulating layer 184, and the insulating layer 182 and the conductive layer 170S.

[0354] The pixel electrode 111S can be formed, for example, in the same process as the pixel electrodes 111R, 111G, and 111B. The conductive layer 135S can be formed, for example, in the same process as the conductive layers 135R, 135G, and 135B. The conductive layer 170S can be formed, for example, in the same process as the conductive layers 170R, 170G, and 170B. The layer 259S can be formed, for example, in the same process as the layers 259R, 259G, and 259B.

[0355] Here, the layer 113S includes at least an active layer and preferably has multiple functional layers. Examples of functional layers include a carrier transport layer (hole transport layer and electron transport layer) and a carrier block layer (hole block layer and electron block layer). It is also preferable to have one or more layers on the active layer. Having another layer between the active layer and the mask layer can prevent the active layer from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the active layer. This can improve the reliability of the light-receiving device 150. Therefore, the layer 113S preferably has an active layer and a carrier block layer (hole block layer or electron block layer) or a carrier transport layer (electron transport layer or hole transport layer) on the active layer.

[0356] The layer 113S is a layer provided in the light-receiving device 150 but not in the light-emitting device. However, functional layers other than the active layer included in the layer 113S may have the same material as functional layers other than the light-emitting layers included in the layers 113B to 113R. On the other hand, the common layer 114 is a continuous layer shared by the light-emitting device and the light-receiving device.

[0357] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same functions in the light-emitting device and in the light-receiving device. For example, a hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0358] A mask layer 118R is located between the layer 113R and the insulating layer 125, and a mask layer 118S is located between the layer 113S and the insulating layer 125. The mask layer 118R is a remaining portion of a mask layer that was provided on the layer 113R when processing the layer 113R. The mask layer 118S is a remaining portion of a mask layer that was provided in contact with the upper surface of the layer 113S, which is a layer including an active layer, when processing the layer 113S. The mask layers 118B and 118S may be made of the same material or different materials.

[0359] 30A shows an example in which the aperture ratio (which can also be referred to as the size, the size of the light-emitting region, or the size of the light-receiving region) of subpixel 11S is larger than that of subpixels 11R, 11G, and 11B, but one aspect of the present invention is not limited to this. The aperture ratios of subpixels 11R, 11G, 11B, and 11S can each be determined appropriately. The aperture ratios of subpixels 11R, 11G, 11B, and 11S can be configured to be different from each other, or any two or more of subpixels 11R, 11G, 11B, and 11S can be configured to be equal or approximately equal.

[0360] The subpixel 11S may have a higher aperture ratio than at least one of the subpixels 11R, 11G, and 11B. A larger light-receiving area of ​​the subpixel 11S may make it easier to detect an object. For example, depending on the resolution of the display device and the circuit configuration of the subpixels, the aperture ratio of the subpixel 11S may be higher than the aperture ratios of the other subpixels.

[0361] The subpixel 11S may have a lower aperture ratio than at least one of the subpixels 11R, 11G, and 11B. If the light-receiving area of ​​the subpixel 11S is small, the imaging range is narrowed, which makes it possible to suppress blurring in the imaging result and improve the resolution. This is preferable because it enables high-definition or high-resolution imaging.

[0362] In this way, the sub-pixel 11S can have a detection wavelength, resolution, and aperture ratio suited to the application.

[0363] The configuration of the sub-pixel 11S shown here can also be applied to other configuration examples.

[0364] In a display device according to one embodiment of the present invention, a light-shielding layer is provided between pixel electrodes, thereby preventing external light and light emitted from a light-emitting device from entering a transistor. This prevents light-induced fluctuations in the electrical characteristics of the transistor. Therefore, a highly reliable transistor can be obtained, leading to a highly reliable display device. Furthermore, since light is prevented from entering a layer including a transistor, stray light due to wiring or the like in the layer can be suppressed. This allows a display device with high contrast. Furthermore, a display device with high visibility can be obtained.

[0365] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0366] 31A to 45C . Note that the description of the materials and formation methods of the elements may be omitted if they are the same as those described in Embodiment 1. Details of the structure of the light-emitting device will be described in Embodiment 5.

[0367] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a CVD method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, etc. Examples of CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method, a thermal CVD method, and an atmospheric pressure CVD (APCVD) method. Furthermore, one type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0368] The thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0369] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0370] When processing the thin film that constitutes the display device, a lithography method or the like can be used. Alternatively, the thin film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0371] There are two typical lithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0372] In lithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. An electron beam can also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0373] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0374] [Fabrication Method Example 1] Here, an example of a fabrication method for the display device shown in Fig. 6A will be described with reference to Fig. 31A to Fig. 37B. Fig. 31A to Fig. 37B show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 shown in Fig. 1A side by side. Fig. 7B can be referred to for the configuration of the connection portion 140.

[0375] First, conductive layers 250R, 250G, 250B, and 250p are formed on substrate 103. Materials that can be used for substrate 103 are as described above, and an insulating layer can also be stacked on the substrate. Note that when forming conductive layers 250R, 250G, 250B, and 250p, portions of the substrate or the insulating layer may be removed, forming recesses in the substrate or the insulating layer.

[0376] An insulating film that will become insulating layer 188 is provided so as to cover conductive layer 250R, conductive layer 250G, conductive layer 250B, and conductive layer 250p, and a dummy film that will become dummy layer 192 is formed on the insulating film. Then, opening 194R that reaches conductive layer 250R, opening 194G that reaches conductive layer 250G, opening 194B that reaches conductive layer 250B, and opening 194p that reaches conductive layer 250p are formed in the insulating film and the dummy film, thereby obtaining insulating layer 188 and dummy layer 192 ( FIG. 31A ).

[0377] The insulating layer 188 can have, for example, a stacked structure of a first silicon nitride film formed by PECVD and a second silicon nitride film formed on the first silicon nitride film by PEALD. By using the PECVD method, productivity can be improved. Here, since the insulating layer 188 is provided to cover the conductive layer 250, the unevenness of the surface on which the insulating layer 188 is formed may increase, resulting in poor coverage. By forming the second silicon nitride film on the first silicon nitride film by PEALD, the insulating layer 188 can be formed with high coverage. Furthermore, by using the PEALD method, a denser film with high barrier properties can be obtained.

[0378] The dummy layer 192 is used to form the conductive layers 170R, 170G, 170B, and 170p, and is removed after these conductive layers are formed. When removing the dummy layer 192, it is preferable to use a material with a high selectivity for the dummy layer 192. Specifically, when removing the dummy layer 192, it is preferable to use a material with an etching rate faster than the etching rates of the conductive layers 170R, 170G, 170B, 170p, and the insulating layer 188. This makes it possible to prevent portions of the conductive layers 170R, 170G, 170B, 170p, and the insulating layer 188 from being removed when the dummy layer 192 is removed. Furthermore, when removing the dummy layer 192, the conductive layers 250R, 250G, 250B, 250p, and the substrate 103 are covered by the insulating layer 188, and their surfaces are not exposed. This prevents portions of the conductive layers 250R, 250G, 250B, 250p, and the substrate 103 from being removed by etching or the like. The conductivity of the dummy layer 192 is not particularly limited, and it can be, for example, an insulating layer, a semiconductor layer, or a conductive layer. For example, when silicon nitride is used for the insulating layer 188, silicon oxide can be suitably used for the dummy layer 192.

[0379] Since the dummy layer 192 is a layer that is to be removed, it is preferable to form the dummy layer 192 using a method that has a faster film formation rate than other insulating layers. For example, the dummy layer 192 may be formed using a gas containing TEOS (Tetra-Ethyl-Ortho-Silicate, chemical formula: Si(OC ２ H ５ ) ４) can increase the film formation rate and improve productivity. The dummy layer 192 can have a laminated structure, for example, of a first silicon oxide film formed by PECVD and a second silicon oxide film formed on the first silicon oxide film by APCVD. Increasing the thickness of the dummy layer 192 increases stress, which may cause cracks in the dummy layer 192. By forming the dummy layer 192 into a laminated structure, the occurrence of cracks due to stress can be suppressed. For example, by forming the dummy layer 192 into a laminated structure of a compressive stress layer and a tensile stress layer, the stress of the dummy layer 192 can be reduced. Furthermore, by forming the dummy layer 192 into a laminated structure of layers formed by different film formation methods and adjusting the stress of each layer, the stress of the dummy layer 192 can be reduced.

[0380] Next, conductive layers 170R, 170G, 170B, and 170p are formed to fill openings 194R, 194G, 194B, and 194p ( FIG. 31B ). For example, a conductive film that will become conductive layers 170R, 170G, 170B, and 170p is formed to cover dummy layer 192, openings 194R, 194G, 194B, and 194p. Then, a portion of the conductive film is removed to expose the top surface of dummy layer 192, and conductive layers 170R, 170G, 170B, and 170p are formed. The conductive film can be removed by, for example, dry etching or CMP. CMP is particularly preferred. 31B shows an example in which the upper surfaces of the conductive layers 170R, 170G, 170B, and 170p are flush with or approximately flush with the upper surface of the dummy layer 192.

[0381] Next, the dummy layer 192 is removed ( FIG. 31C ). By removing the dummy layer 192, the top surface of the insulating layer 188 is exposed, as well as part of the side surfaces of the conductive layer 170R, part of the side surfaces of the conductive layer 170G, part of the side surfaces of the conductive layer 170B, and part of the side surfaces of the conductive layer 170p. The dummy layer 192 can be preferably removed by wet etching. For example, when silicon nitride is used for the insulating layer 188 and silicon oxide is used for the dummy layer 192, an etchant containing fluorine can be used. Examples of fluorine-containing etchants include hydrofluoric acid and BHF (Buffered Hydrofluoric Acid). BHF is a compound containing hydrofluoric acid and a buffer (e.g., ammonium fluoride (NH )). ４ F). Etchants containing these and a surfactant can also be used.

[0382] Next, light-shielding layer 109 is formed on insulating layer 188 ( FIG. 31D ). Light-shielding layer 109 has regions that contact the upper surface of insulating layer 188, some side surfaces of conductive layer 170R, some side surfaces of conductive layer 170G, some side surfaces of conductive layer 170B, and some side surfaces of conductive layer 170p. In this case, the height of the upper surface of light-shielding layer 109 is preferably lower than the height of the upper surfaces of conductive layer 170R, conductive layer 170G, conductive layer 170B, and conductive layer 170p. In other words, it is preferable that the upper surface and some side surfaces of conductive layer 170R, the upper surface and some side surfaces of conductive layer 170G, the upper surface and some side surfaces of conductive layer 170B, and the upper surface and some side surfaces of conductive layer 170p are exposed.

[0383] The light-shielding layer 109 is preferably formed by a wet film-forming method, such as spin coating.

[0384] It is preferable to perform a heat treatment after the formation of the light-shielding layer 109. The heat treatment is performed at a temperature lower than the heat resistance temperature of the light-shielding layer 109. The substrate temperature during the heat treatment is preferably 50°C or higher and 250°C or lower, more preferably 60°C or higher and 230°C or lower, and even more preferably 70°C or higher and 200°C or lower. This allows the solvent contained in the light-shielding layer 109 to be removed. Note that the temperature of the heat treatment is not limited to the above-mentioned range and can be appropriately set depending on the heat resistance temperature of the material used for the light-shielding layer 109. By performing the heat treatment after the formation of the light-shielding layer 109, it is possible to suppress the release of components (e.g., solvent) contained in the light-shielding layer 109 during subsequent heat-applying processes. This suppresses the diffusion of impurities into the transistors and light-emitting devices 130 included in the layer 101, thereby improving their reliability. Therefore, a highly reliable display device can be obtained.

[0385] Here, an example is shown in which the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, and the conductive layer 170p are formed, and then the light-shielding layer 109 is formed. This allows the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, and the conductive layer 170p to be formed at a temperature equal to or higher than the heat-resistant temperature of the light-shielding layer 109, thereby widening the range of options for the method and material for forming the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, and the conductive layer 170p.

[0386] Next, an insulating film 182f that will become the insulating layer 182 is formed so as to cover the light-shielding layer 109, the conductive layer 170R, the conductive layer 170G, the conductive layer 170G, and the conductive layer 170p, and a sacrificial layer 194 is formed on the insulating film 182f ( FIG. 32A ). The insulating film 182f has regions that contact the upper surface of the light-shielding layer 109, the upper surface and some of the side surfaces of the conductive layer 170R, the upper surface and some of the side surfaces of the conductive layer 170G, the upper surface and some of the side surfaces of the conductive layer 170B, and the upper surface and some of the side surfaces of the conductive layer 170p.

[0387] Films formed after the light-shielding layer 109 (for example, the insulating film 182f and the sacrificial layer 194) are formed at a temperature lower than the heat-resistant temperature of the light-shielding layer 109. The substrate temperature when forming the films is typically 250° C. or lower, preferably 230° C. or lower, and more preferably 200° C. or lower. The substrate temperature when forming the films is not limited to the above-mentioned range, and can be set appropriately depending on the heat-resistant temperature of the material used for the light-shielding layer 109.

[0388] Next, the sacrificial layer 194 is removed, and then a portion of the insulating film 182f is removed ( FIG. 32B ). This exposes the upper surfaces of the conductive layers 170R, 170G, 170B, and 170p, and also forms the insulating layer 182. The upper surface of the insulating layer 182 is also exposed. At this time, the region of the conductive layer 170 located higher than the upper surface of the insulating layer 182 is also removed. This reduces the variation in height of the conductive layers 170R, 170G, 170B, and 170p. The sacrificial layer 194 and the insulating film 182f can be removed by, for example, dry etching or CMP. CMP is particularly suitable for removing the sacrificial layer 194 and the insulating film 182f. It is preferable that the upper surfaces of the conductive layers 170R, 170G, 170B, and 170p be flush or approximately flush with the upper surface of the insulating layer 182. This increases the flatness of the surface on which the light-emitting device 130 is formed, reduces unevenness in brightness, and allows for a display device with high display quality.

[0389] The sacrificial layer 194 may be an insulating layer, a semiconductor layer, or a conductive layer. An insulating layer is particularly suitable for the sacrificial layer 194. An inorganic or organic material may be used for the sacrificial layer 194. When CMP is used to remove the sacrificial layer 194, an inorganic material may be used for the sacrificial layer 194. The material used for the sacrificial layer 194 is preferably different from the material used for the insulating film 182f (later insulating layer 182). For example, when silicon oxide is used for the insulating film 182f, silicon nitride may be used for the sacrificial layer 194. Using different materials for the sacrificial layer 194 and the insulating film 182f facilitates endpoint detection in the CMP process, which is preferable. It is more preferable that the polishing rate of the sacrificial layer 194 in the CMP process be faster than the polishing rate of the insulating film 182f. This improves productivity.

[0390] It is preferable that the entire upper surfaces of the conductive layers 170R, 170G, 170B, and 170p are exposed. It is preferable that neither the sacrificial layer 194 nor the insulating film 182f remain on the conductive layers 170R, 170G, 170B, and 170p. This increases the contact area between the conductive layer 170 and the pixel electrode 111, thereby reducing the contact resistance therebetween. Similarly, it increases the contact area between the conductive layer 170 and the conductive layer 123, thereby reducing the contact resistance therebetween.

[0391] Note that a structure in which part of the sacrificial layer 194 remains on the insulating layer 182 may also be used. In the case in which part of the sacrificial layer 194 remains, it is particularly preferable that the sacrificial layer 194 be an insulating layer. By using an insulating layer as the sacrificial layer 194, for example, an increase in leakage and parasitic capacitance due to the sacrificial layer 194 can be suppressed.

[0392] Although the structure in which the sacrificial layer 194 is provided over the insulating film 182f is described here, one embodiment of the present invention is not limited to this. A structure in which the sacrificial layer 194 is not provided may also be used. For example, after the insulating film 182f is formed, part of the insulating film 182f can be removed. As a result, the top surfaces of the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, and the conductive layer 170p are exposed, and the insulating layer 182 is formed.

[0393] Next, a first conductive film that will become pixel electrodes 111R, 111G, 111B, and conductive layer 123 is formed on conductive layers 170R, 170G, 170B, 170p, and insulating layer 182, and a second conductive film that will become conductive layers 135R, 135G, 135B, and 135p is formed on the first conductive film. The first conductive film and the second conductive film are then processed to form pixel electrodes 111R, 111G, 111B, conductive layer 123, conductive layer 135R, 135G, 135B, and conductive layer 135p ( FIG. 32C ). The first conductive film and the second conductive film can each be formed by, for example, sputtering or vacuum deposition. When the first conductive film and the second conductive film are processed, a part of the insulating layer 182 may be removed, and a recess may be formed in the insulating layer 182 .

[0394] Subsequently, it is preferable to perform hydrophobic treatment on the conductive layer 135 and the pixel electrode 111. The hydrophobic treatment can change the surface of the treatment target from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface of the treatment target. By performing the hydrophobic treatment on the conductive layer 135 and the pixel electrode 111, adhesion between the conductive layer 135 and the pixel electrode 111 and a film (here, the film 113b) to be formed in a later step can be increased, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0395] The hydrophobic treatment can be performed by, for example, modifying the conductive layer 135 and the pixel electrode 111 with fluorine. The fluorine modification can be performed by, for example, a treatment using a gas containing fluorine, a heat treatment, a plasma treatment in a gas atmosphere containing fluorine, or the like. As the gas containing fluorine, for example, fluorine gas can be used, and for example, fluorocarbon gas can be used. As the fluorocarbon gas, for example, carbon tetrafluoride (CF ４ ) Gas, C ４ F ６ Gas, C ２ F ６ Gas, C ４ F ８ Gas, C ５ F ８ As a gas containing fluorine, for example, SF ６ Gas, NF ３ Gas, CHF ３ Gases such as helium gas, argon gas, or hydrogen gas can be added to these gases as appropriate.

[0396] The surfaces of the conductive layer 135 and the pixel electrode 111 can be hydrophobized by performing plasma treatment on the surfaces of the conductive layer 135 and the pixel electrode 111 in a gas atmosphere containing a Group 18 element such as argon, followed by treatment using a silylating agent. Hexamethyldisilazane (HMDS), trimethylsilylimidazole (TMSI), or the like can be used as the silylating agent. Furthermore, the surfaces of the conductive layer 135 and the pixel electrode 111 can also be hydrophobized by performing plasma treatment on the surfaces of the conductive layer 135 and the pixel electrode 111 in a gas atmosphere containing a Group 18 element such as argon, followed by treatment using a silane coupling agent.

[0397] By performing plasma treatment on the surfaces of the conductive layer 135 and the pixel electrode 111 in a gas atmosphere containing a Group 18 element such as argon, it is possible to damage the surfaces of the conductive layer 135 and the pixel electrode 111. This makes it easier for methyl groups contained in a silylating agent such as HMDS to bond to the surfaces of the conductive layer 135 and the pixel electrode 111. It also makes it easier for silane coupling to occur using a silane coupling agent. As described above, by performing plasma treatment on the surfaces of the conductive layer 135 and the pixel electrode 111 in a gas atmosphere containing a Group 18 element such as argon, and then performing treatment using a silylating agent or a silane coupling agent, it is possible to hydrophobize the surfaces of the conductive layer 135 and the pixel electrode 111.

[0398] The treatment using a silylating agent or a silane coupling agent can be performed by applying the silylating agent or the silane coupling agent using, for example, a spin coating method or a dipping method. Alternatively, the treatment using a silylating agent or the silane coupling agent can be performed by, for example, using a vapor phase method to form a film containing a silylating agent or a film containing a silane coupling agent in contact with the conductive layer 135 and the pixel electrode 111. In the vapor phase method, first, a material containing a silylating agent or a material containing a silane coupling agent is evaporated to incorporate the silylating agent or the silane coupling agent into an atmosphere. Next, the substrate on which the conductive layer 135 and the pixel electrode 111 are formed is placed in the atmosphere. This allows a film containing the silylating agent or the silane coupling agent to be formed in contact with the conductive layer 135 and the pixel electrode 111, thereby making the surfaces of the conductive layer 135 and the pixel electrode 111 hydrophobic.

[0399] Next, a film 113b, which will later become layer 113B, is formed on the conductive layer 135 and the pixel electrode 111 ( FIG. 33A ). The film 113b (later layer 113B) contains a light-emitting material that emits blue light. That is, in this embodiment, first, island-shaped EL layers included in the light-emitting device that emits blue light are formed, and then island-shaped EL layers included in the light-emitting device that emits light of other colors are formed.

[0400] 33A , in the cross-sectional view taken along dashed dotted line Y1-Y2, the film 113b is not formed on the conductive layer 123. For example, by using an area mask, the film 113b can be formed only in a desired region. By employing a film formation process using an area mask and a processing process using a resist mask, a light-emitting device can be fabricated through a relatively simple process.

[0401] As described in Embodiment 1, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Specifically, the heat resistance temperature of the compound contained in the film 113b is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. This can improve the reliability of the light-emitting device. Furthermore, the upper limit of the temperature to which the display device can be applied in the manufacturing process can be increased. Therefore, the range of choices for materials and formation methods used in the display device can be expanded, and the manufacturing yield and reliability can be improved.

[0402] The film 113b can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the film 113b may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0403] Subsequently, a mask film 118b to become the mask layer 118B and a mask film 119b to become the mask layer 119B are formed in this order on the film 113b and the conductive layer 123 (FIG. 33A).

[0404] In this embodiment, an example is shown in which the mask film is formed in a two-layer structure of the mask film 118b and the mask film 119b, but the mask film may also have a single-layer structure or a laminated structure of three or more layers.

[0405] By providing a mask layer over the film 113b, damage to the film 113b during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0406] The mask film 118b is made of a film that is highly resistant to the processing conditions of the film 113b, specifically, a film that has a high etching selectivity with respect to the film 113b.The mask film 119b is made of a film that has a high etching selectivity with respect to the mask film 118b.

[0407] The mask films 118b and 119b are formed at a temperature lower than the heat-resistant temperature of the film 113b. The substrate temperature when forming the mask films 118b and 119b is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0408] Examples of the heat resistance temperature index include a glass transition point, a softening point, a melting point, a thermal decomposition temperature, a 5% weight loss temperature, etc. The heat resistance temperature of the films 113b, 113g, and 113r (i.e., the layers 113B, 113G, and 113R) can be any of the temperatures that serve as an index of the heat resistance temperature, preferably the lowest temperature among these.

[0409] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the substrate temperature during the formation of the mask film can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher. For example, the inorganic insulating film can be made denser and have a higher barrier property as the film formation temperature increases. Therefore, by forming the mask film at such a temperature, damage to the film 113b can be further reduced, and the reliability of the light-emitting device can be improved.

[0410] It is preferable to use a film that can be removed by wet etching for the mask films 118b and 119b, since wet etching can reduce damage to the film 113b during processing of the mask films 118b and 119b compared to dry etching.

[0411] The mask films 118b and 119b can be formed by, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0412] It is preferable that the mask film 118b formed on and in contact with the film 113b be formed using a formation method that causes less damage to the film 113b than the mask film 119b. For example, it is preferable to form the mask film 118b using the ALD method or the vacuum deposition method rather than the sputtering method.

[0413] The mask film 118b and the mask film 119b may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0414] The mask films 118b and 119b can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the mask films 118b and 119b is preferable because it can prevent ultraviolet rays from irradiating the film 113b and thereby prevent deterioration of the film 113b.

[0415] Using a metal film or an alloy film for one or both of the mask films 118b and 119b is preferable because plasma damage to the film 113b can be suppressed and deterioration of the film 113b can be suppressed. Specifically, plasma damage to the film 113b can be suppressed in processes using a dry etching method and ashing processes. In particular, using a metal film or an alloy film such as a tungsten film as the mask film 119b is preferable.

[0416] The mask film 118b and the mask film 119b can be made of a metal oxide such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or indium tin oxide containing silicon.

[0417] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0418] As the mask film, a film containing a material having light-shielding properties, particularly against ultraviolet light, can be used. For example, a film having ultraviolet light-reflecting properties or a film absorbing ultraviolet light can be used. As the light-shielding material, various materials such as metals, insulators, semiconductors, and semimetals having light-shielding properties against ultraviolet light can be used. However, since part or all of the mask film will be removed in a later process, it is preferable that the mask film be a film that can be processed by etching, and particularly preferable that the processability is good.

[0419] For example, semiconductor materials such as silicon or germanium can be used as materials that are highly compatible with semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metallic materials such as carbon or compounds thereof can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0420] By using a film containing a material having a light-blocking property against ultraviolet rays as the mask film, it is possible to prevent the EL layer from being irradiated with ultraviolet rays during an exposure process, etc. By preventing damage to the EL layer from ultraviolet rays, it is possible to improve the reliability of the light-emitting device.

[0421] The same effect can be achieved when a film containing a material that blocks ultraviolet light is used as the material for the insulating film 125f described later.

[0422] The mask films 118b and 119b can each be made of any of various inorganic insulating films that can be used for the protective layer 131. In particular, oxide insulating films are preferable because they have higher adhesion to the film 113b than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the mask films 118b and 119b. For example, aluminum oxide films can be formed as the mask films 118b and 119b using the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (particularly the EL layer).

[0423] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the mask film 118b, and an inorganic film (e.g., an In-Ga-Zn oxide film, a silicon film, or a tungsten film) formed using the sputtering method can be used as the mask film 119b.

[0424] The same inorganic insulating film can be used for both the mask film 118b and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using an ALD method can be used for both the mask film 118b and the insulating layer 125. The mask film 118b and the insulating layer 125 may be formed under the same or different film formation conditions. For example, by forming the mask film 118b under the same conditions as the insulating layer 125, the mask film 118b can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118b is a layer that is removed mostly or entirely in a later process, it is preferable that it be easily processed. Therefore, it is preferable that the mask film 118b be formed under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0425] An organic material may be used for one or both of the mask films 118b and 119b. For example, the organic material may be a material that is soluble in a solvent that is chemically stable with respect to at least the film located at the top of the film 113b. In particular, a material that dissolves in water or alcohol is preferably used. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the film 113b.

[0426] The mask film 118b and the mask film 119b may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0427] For example, the mask film 118b can be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 119b can be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0428] As described in Embodiment 1, in the display device of one embodiment of the present invention, part of the mask film may remain as a mask layer.

[0429] Subsequently, a resist mask 190B is formed on the mask film 119b (FIG. 33A). The resist mask 190B can be formed by applying a photosensitive resin, exposing it to light, and developing it.

[0430] The resist mask 190B can be made of a positive resist material or a negative resist material.

[0431] The resist mask 190B is provided in a position overlapping with the pixel electrode 111B and the conductive layer 135B. Note that although the resist mask 190B is not provided in a position overlapping with the conductive layer 123 and the conductive layer 135p in FIG. 33A , one embodiment of the present invention is not limited to this. The resist mask 190B can also be provided in a position overlapping with the conductive layer 123 and the conductive layer 135p. This can prevent damage to the conductive layer 123 and the conductive layer 135p during the manufacturing process of the display device.

[0432] Next, a portion of the mask film 119b is removed using the resist mask 190B as a mask to form a mask layer 119B. The mask layer 119B remains on the conductive layer 135B. Then, the resist mask 190B is removed (FIG. 33B).

[0433] Next, using the mask layer 119B as a mask, a part of the mask film 118b is removed to form a mask layer 118B (FIG. 33C). The mask layer 119B can also be said to function as a hard mask.

[0434] The mask films 118b and 119b can be processed by wet etching or dry etching, respectively, and it is preferable to use anisotropic dry etching for processing the mask films 118b and 119b.

[0435] The use of wet etching can reduce damage to the film 113b when processing the mask films 118b and 119b compared to the use of dry etching. When using wet etching, it is preferable to use, for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed solution containing two or more of these.

[0436] In processing the mask film 119b, the film 113b is not exposed, and therefore the range of processing methods to be selected is wider than in processing the mask film 118b. Specifically, even when a gas containing oxygen is used as an etching gas in processing the mask film 119b, deterioration of the film 113b can be further suppressed.

[0437] When dry etching is used to process the mask film 118b, deterioration of the film 113b can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a noble gas such as He as the etching gas.

[0438] For example, when an aluminum oxide film formed by the ALD method is used as the mask film 118b, CHF ３ and He or CHF ３ and He and CH ４ The mask film 118b can be processed by dry etching using a diluted phosphoric acid. When an In-Ga-Zn oxide film formed by sputtering is used as the mask film 119b, the mask film 119b can be processed by wet etching using a diluted phosphoric acid. ４The mask film 119b can be processed by dry etching using diluted phosphoric acid and Ar. Alternatively, the mask film 119b can be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the mask film 119b, SF ６ , C.F. ４ and O ２ , or CF ４ and Cl ２ and O ２ The mask film 119b can be processed by dry etching using the above method.

[0439] The resist mask 190B can be removed by, for example, ashing using oxygen plasma. ２ And, CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ , or a noble gas such as He. Alternatively, the resist mask 190B can be removed by wet etching. At this time, the mask film 118b is located on the outermost surface and the film 113b is not exposed, so that damage to the film 113b can be suppressed in the process of removing the resist mask 190B. Furthermore, the range of options for the method of removing the resist mask 190B can be expanded.

[0440] Subsequently, the film 113b is processed to form a layer 113B. For example, a portion of the film 113b is removed using the mask layers 119B and 118B as masks to form the layer 113B (FIG. 33C). The mask layers 119B and 118B can also be said to function as a hard mask.

[0441] 33C , a stacked structure of the layer 113B, the mask layer 118B, and the mask layer 119B remains on the pixel electrode 111B. The top and side surfaces of the conductive layer 135R, the conductive layer 135G, and the conductive layer 135p are exposed, and the side surfaces of the pixel electrode 111R, the pixel electrode 111G, and the conductive layer 123 are exposed.

[0442] When processing the film 113b, the pixel electrode 111R, the conductive layer 135R, the pixel electrode 111G, the conductive layer 135G, the conductive layer 123, and the conductive layer 135p are exposed to an etching gas or an etching solution. On the other hand, the pixel electrode 111B and the conductive layer 135B are not exposed to the etching gas or the etching solution. In this way, in the light-emitting device of the first color to be formed, the pixel electrode 111 and the conductive layer 135 are not damaged by the etching process, and the state of the interface between the pixel electrode and the EL layer can be maintained in good condition.

[0443] The film 113b is preferably processed by anisotropic etching, particularly by anisotropic dry etching, or alternatively, by wet etching.

[0444] When dry etching is used to process the film 113b, the surface of the display device being manufactured is exposed to plasma in the dry etching apparatus. Here, using a metal film or an alloy film for one or both of the mask layers 118B and 119B is preferable because it can prevent damage caused by plasma to the remaining portion of the film 113b (the portion that will become the layer 113B) and therefore prevent deterioration of the layer 113B. In particular, it is preferable to use a metal film or an alloy film such as a tungsten film as the mask layer 119B.

[0445] When dry etching is used, O is used as the etching gas. ２ By not using a gas containing , deterioration of the film 113b can be suppressed.

[0446] Etching gas: O ２ A gas containing O may also be used. ２ By including the compound (I), the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. Therefore, damage to the film 113b can be suppressed. Furthermore, problems such as adhesion of reaction products that occur during etching can be suppressed.

[0447] When dry etching is used, for example, H ２ , C.F. ４, C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing one or more of the noble gases such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas can be used as the etching gas. Specifically, for example, H ２ and a gas containing Ar, or CF ４ A gas containing CF and He can be used as an etching gas. ４ , He, and O ２ A gas containing, for example, H can be used as the etching gas. ２ A gas containing Ar and a gas containing oxygen can be used as the etching gas.

[0448] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source. Examples of the dry etching apparatus having a high-density plasma source include an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel-plate electrodes may be used. The capacitively coupled plasma etching apparatus having parallel-plate electrodes may be configured to apply a high-frequency voltage to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a plurality of different high-frequency voltages to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a high-frequency voltage of the same frequency to each of the parallel-plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel-plate electrodes.

[0449] 33C shows an example in which the edge of layer 113B is positioned outside the edge of pixel electrode 111B. This configuration can increase the aperture ratio of the pixel. Although not shown in FIG. 33C , the etching process may result in the formation of a recess in a region of insulating layer 182 that does not overlap with layer 113B.

[0450] By covering the side surfaces of the pixel electrode 111B and the upper and lower surfaces of the conductive layer 135B with the layer 113B, subsequent processes can be performed without exposing the pixel electrode 111B and the conductive layer 135B. If the edges of the pixel electrode 111B and the conductive layer 135B are exposed, corrosion may occur during an etching process or other process. Products resulting from corrosion of the pixel electrode 111B and the conductive layer 135B may be unstable, dissolving in solution during wet etching or scattering into the atmosphere during dry etching. Dissolving the products into solution or scattering into the atmosphere may result in the products adhering to the processed surface and the side surfaces of the layer 113B, adversely affecting the characteristics of the light-emitting device or forming a leak path between multiple light-emitting devices. Therefore, by configuring the layer 113B to cover the side surfaces of the pixel electrode 111B and the upper and lower surfaces of the conductive layer 135B, the yield and characteristics of the light-emitting device can be improved, for example.

[0451] As described above, in one embodiment of the present invention, the resist mask 190B is formed over the mask film 119b, and part of the mask film 119b is removed using the resist mask 190B to form the mask layer 119B. Then, part of the film 113b is removed using the mask layer 119B as a mask to form the layer 113B. Therefore, it can be said that the layer 113B is formed by processing the film 113b by photolithography. Note that part of the film 113b can also be removed using the resist mask 190B. Then, the resist mask 190B can be removed.

[0452] Next, it is preferable to perform hydrophobic treatment on the conductive layer 135 and the pixel electrode 111. When the film 113b is processed, the surface state of the conductive layer 135 and the pixel electrode 111 may become hydrophilic. By performing hydrophobic treatment on the conductive layer 135 and the pixel electrode 111, the adhesion between the conductive layer 135 and the pixel electrode 111 and a film (here, the film 113g) formed in a later step can be improved, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0453] Next, a film 113g that will become layer 113G is formed on the pixel electrode 111R and conductive layer 135R, on the pixel electrode 111G and conductive layer 135G, and on the mask layer 119B ( FIG. 34A ). The film 113g (later layer 113G) contains a light-emitting material that emits green light. That is, this embodiment shows an example in which island-shaped EL layers of a light-emitting device that emits green light are formed second. Note that the present invention is not limited to this, and island-shaped EL layers of a light-emitting device that emits red light can also be formed second.

[0454] Film 113g can be formed using a method similar to that used to form film 113b.

[0455] Next, a mask film 118g that will become mask layer 118G and a mask film 119g that will become mask layer 119G are formed in this order on film 113g, and then a resist mask 190G is formed (FIG. 34A). The materials and formation methods of mask films 118g and 119g are the same as those applicable to mask films 118b and 119b. The materials and formation methods of resist mask 190G are the same as those applicable to resist mask 190B.

[0456] The resist mask 190G is provided at a position overlapping the pixel electrode 111G.

[0457] Subsequently, a portion of the mask film 119g is removed using the resist mask 190G to form a mask layer 119G. The mask layer 119G remains on the pixel electrode 111G. Thereafter, the resist mask 190G is removed (FIG. 34B).

[0458] Next, a portion of the mask film 118g is removed using the mask layer 119G as a mask, thereby forming a mask layer 118G. Then, the film 113g is processed to form a layer 113G. For example, a portion of the film 113g is removed using the mask layers 119G and 118G as masks, thereby forming the layer 113G (FIG. 34C).

[0459] Here, when processing the film 113g, the pixel electrode 111R, the conductive layer 135R, the conductive layer 123, and the conductive layer 135p are exposed to an etching gas or an etching solution. On the other hand, the pixel electrode 111G, the conductive layer 135G, the pixel electrode 111B, and the pixel electrode 111G are not exposed to the etching gas or the etching solution. In other words, in the light-emitting device of the second color to be formed, the surface of the pixel electrode is exposed in one etching process, and in the light-emitting device of the third color to be formed, the surface of the pixel electrode is exposed in two etching processes. Therefore, it is preferable to form the island-shaped EL layer earlier for light-emitting devices whose characteristics are more likely to be affected by the surface condition of the pixel electrode. This can improve the characteristics of the light-emitting devices of each color.

[0460] Using a metal film or an alloy film for one or both of the mask layers 118B and 119B is preferable because it can prevent plasma damage to the layer 113B when the layer 113B is formed by dry etching, thereby suppressing deterioration of the layer 113B. Furthermore, using a metal film or an alloy film for one or both of the mask layers 118G and 119G is preferable because it can prevent plasma damage to the remaining portion of the film 113g (layer 113G), thereby suppressing deterioration of the layer 113G. In particular, it is preferable to use a metal film or an alloy film such as a tungsten film as the mask layer 119G.

[0461] 34C , a stacked structure of the layer 113G, the mask layer 118G, and the mask layer 119G remains on the pixel electrode 111G. The top and side surfaces of the conductive layer 135R and the conductive layer 135p are exposed, and the side surfaces of the pixel electrode 111R and the conductive layer 123 are exposed.

[0462] Next, it is preferable to perform hydrophobic treatment on the conductive layer 135 and the pixel electrode 111. When the film 113g is processed, the surface state of the conductive layer 135 and the pixel electrode 111 may become hydrophilic. By performing hydrophobic treatment on the conductive layer 135 and the pixel electrode 111, the adhesion between the conductive layer 135 and the pixel electrode 111 and a film (here, the film 113r) formed in a later step can be improved, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0463] Subsequently, a film 113r that will become the layer 113R is formed on the pixel electrode 111R, the conductive layer 135R, the mask layer 119G, and the mask layer 119B (FIG. 35A). The film 113r (later layer 113R) contains a light-emitting material that emits red light.

[0464] Film 113r can be formed using methods similar to those that can be used to form film 113b.

[0465] Next, a mask film 118r to become the mask layer 118R and a mask film 119r to become the mask layer 119R are formed in this order on the film 113r, and then a resist mask 190R is formed (FIG. 35A). The materials and formation methods of the mask films 118r and 119r are the same as those applicable to the mask films 118b and 119b. The materials and formation methods of the resist mask 190R are the same as those applicable to the resist mask 190B.

[0466] The resist mask 190R is provided at a position overlapping the pixel electrode 111R.

[0467] Subsequently, a part of the mask film 119r is removed using the resist mask 190R to form a mask layer 119R, which remains on the pixel electrode 111R. Then, the resist mask 190R is removed (FIG. 35B).

[0468] Next, a portion of the mask film 118r is removed using the mask layer 119R as a mask, thereby forming a mask layer 118R. Next, the film 113r is processed to form a layer 113R. For example, a portion of the film 113r is removed using the mask layers 119R and 118R as masks, thereby forming the layer 113R (FIG. 35C).

[0469] Using a metal film or an alloy film for one or both of the mask layers 118B and 119B, and one or both of the mask layers 118G and 119G, respectively, is preferable because it can prevent plasma damage to the layers 113B and 113G and suppress deterioration of the layers 113B and 113G. Furthermore, using a metal film or an alloy film for one or both of the mask layers 118R and 119R is preferable because it can prevent plasma damage to the remaining portion of the film 113r (layer 113R) and suppress deterioration of the layer 113R. It is particularly preferable to use a metal film or an alloy film, such as a tungsten film, as the mask layer 119R.

[0470] 35C, a stacked structure of the layer 113R, the mask layer 118R, and the mask layer 119R remains on the pixel electrode 111R. The top and side surfaces of the conductive layer 135p are exposed, as are the side surfaces of the conductive layer 123. In addition, the mask layers 119G and 119B are exposed.

[0471] The side surfaces of the layers 113B, 113G, and 113R are preferably perpendicular or substantially perpendicular to the surface on which they are to be formed. For example, the angle between the surface on which they are to be formed and these side surfaces is preferably 60 degrees or more and 90 degrees or less.

[0472] As described above, the distance between any two adjacent layers of the layers 113B, 113G, and 113R formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of any two adjacent layers of the layers 113B, 113G, and 113R. By narrowing the distance between the island-shaped EL layers in this manner, a display device with high definition and a large aperture ratio can be provided.

[0473] Next, it is preferable to remove mask layers 119B, 119G, and 119R ( FIG. 36A ). Depending on the subsequent process, mask layers 118B, 118G, 118R, 119B, 119G, and 119R may remain on the display device. By removing mask layers 119B, 119G, and 119R at this stage, it is possible to prevent mask layers 119B, 119G, and 119R from remaining on the display device. For example, if a conductive material is used for mask layers 119B, 119G, and 119R, removing mask layers 119B, 119G, and 119R in advance can prevent leakage current and capacitance from remaining mask layers 119B, 119G, and 119R.

[0474] In the present embodiment, the case where mask layers 119B, 119G, and 119R are removed will be described as an example, but it is also possible to configure without removing mask layers 119B, 119G, and 119R. For example, if mask layers 119B, 119G, and 119R contain the aforementioned material that has a light-blocking property against ultraviolet light, it is preferable to proceed to the next step without removing them, as this can protect the island-shaped EL layer from ultraviolet light.

[0475] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the layers 113B, 113G, and 113R during the mask layer removal can be reduced compared to when a dry etching method is used.

[0476] When a metal film or an alloy film is used for the mask layers 119B, 119G, and 119R, the mask layers 119B, 119G, and 119R can prevent plasma damage to the EL layer. Therefore, the film can be processed using a dry etching method in the steps up to the removal of the mask layers 119B, 119G, and 119R. On the other hand, in the steps of removing the mask layers 119B, 119G, and 119R and in the steps thereafter, the film that prevents plasma damage to the EL layer is lost, so it is preferable to process the film using a method that does not use plasma, such as a wet etching method.

[0477] The mask layer may be removed by dissolving it in a solvent such as water or alcohol, including ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0478] After removing the mask layers, drying treatment may be performed to remove water contained in the layers 113B, 113G, and 113R and water adsorbed on the surfaces of the layers 113B, 113G, and 113R. For example, heat treatment can be performed in an inert gas atmosphere such as a nitrogen atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0479] Subsequently, an insulating film 125f that will become the insulating layer 125 is formed so as to cover the pixel electrode 111, the conductive layer 135, the layer 113B, the layer 113G, the layer 113R, the mask layer 118B, the mask layer 118G, and the mask layer 118R (FIG. 36A).

[0480] As will be described later, an insulating layer 127 is formed in contact with the upper surface of the insulating film 125f. Therefore, it is preferable that the upper surface of the insulating film 125f has high adhesion to the resin composition (e.g., a photosensitive resin composition containing an acrylic resin) used for the insulating layer 127. To improve adhesion, it is preferable to hydrophobize (or increase the hydrophobicity of) the upper surface of the insulating film 125f by performing a surface treatment. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the insulating film 125f in this way, the insulating layer 127 can be formed with high adhesion. The hydrophobization treatment described above can also be used as the surface treatment.

[0481] Subsequently, an insulating layer 127 is formed on the insulating film 125f (FIG. 36B).

[0482] The insulating film 125f and the insulating layer 127 are preferably formed by a formation method that causes less damage to the layers 113B, 113G, and 113R. In particular, since the insulating film 125f is formed in contact with the side surfaces of the layers 113B, 113G, and 113R, it is preferably formed by a formation method that causes less damage to the layers 113B, 113G, and 113R than the insulating layer 127.

[0483] The insulating film 125f and the insulating layer 127 are formed at a temperature lower than the heat-resistant temperatures of the layer 113B, the layer 113G, and the layer 113R, respectively. By increasing the substrate temperature during film formation, the insulating film 125f can have a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0484] The substrate temperature when forming the insulating film 125f and the insulating layer 127 is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0485] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the substrate temperatures during the formation of the insulating film 125f and the insulating layer 127 can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher. For example, the higher the deposition temperature of an inorganic insulating film, the denser the film can be and the higher the barrier property it can have. Therefore, by depositing the insulating film 125f at such a temperature, damage to the layers 113B, 113G, and 113R can be further reduced, and the reliability of the light-emitting device can be improved.

[0486] The insulating film 125f is preferably formed by, for example, an ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. The insulating film 125f is preferably formed as an aluminum oxide film by, for example, an ALD method.

[0487] Alternatively, the insulating film 125f may be formed by a sputtering method, a CVD method, or a PECVD method, which have a faster film formation rate than an ALD method. This enables a highly reliable display device to be manufactured with high productivity.

[0488] The insulating layer 127 can be formed by, for example, applying a photosensitive resin, exposing it to light, and developing it. The insulating layer 127 is formed in a region sandwiched between any two of the pixel electrodes 111R, 111G, and 111B, and around the conductive layer 123.

[0489] Here, the width of the insulating layer 127 can be controlled by adjusting the exposure dose. In this embodiment, a structure is shown in which the insulating layer 127 is processed so as to have a portion overlapping with the upper surface of the pixel electrode 111 ( FIG. 36B ). Note that the insulating layer 127 may also be configured not to have a portion overlapping with the upper surface of the pixel electrode 111.

[0490] Etching can also be performed to adjust the height of the surface of the insulating layer 127. The insulating layer 127 can also be processed by ashing using oxygen plasma, for example.

[0491] Subsequently, heat treatment (hereinafter also referred to as post-baking) can be performed to adjust the taper angle of the side surface of the insulating layer 127. Specifically, the taper angle of the side surface of the insulating layer 127 can be made smaller. The temperature of the heat treatment is set lower than the upper temperature limit of the EL layer. The substrate temperature in the heat treatment can be set to 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, more preferably 70° C. or higher and 130° C. or lower. The heating atmosphere can be an air atmosphere or an inert gas atmosphere. The heating atmosphere can be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0492] 37A , using the insulating layer 127 as a mask, portions of the insulating film 125f, the mask layer 118B, the mask layer 118G, and the mask layer 118R are removed. As a result, the insulating layer 125 is formed, and openings are formed in the mask layers 118B, 118G, and 118R. In addition, the top surfaces of the layers 113B, 113G, 113R, and the conductive layer 123 are exposed.

[0493] The etching process can be performed by dry etching or wet etching. Note that it is preferable to use the same material for the insulating film 125f as the mask layers 118B, 118G, and 118R, because these can be etched at the same time.

[0494] When dry etching is performed, it is preferable to use a chlorine-based gas. ２ , BCl ３ , SiCl ４ , and CCl ４ These gases can be used alone or in combination of two or more. Furthermore, oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be added to the chlorine-based gas as appropriate, either alone or in combination of two or more. By using dry etching, thin regions of the mask layers 118B, 118G, and 118R can be formed with good in-plane uniformity.

[0495] When dry etching is performed, by-products generated by the dry etching may be deposited on the upper surface and side surfaces of the insulating layer 127. Therefore, components contained in the etching gas, components contained in the insulating film 125f, components contained in the mask layers 118B, 118G, and 118R, etc. may be contained in the insulating layer 127 after the display device is completed.

[0496] The etching process is preferably performed by wet etching. By using the wet etching method, damage to the layer 113B, the layer 113G, and the layer 113R can be reduced compared to when using the dry etching method. For example, the wet etching can be performed using an alkaline solution. For example, an aqueous solution of tetramethylammonium hydroxide (TMAH), which is an alkaline solution, is preferably used for wet etching of an aluminum oxide film. In this case, the wet etching can be performed by a paddle method.

[0497] As described above, by providing the insulating layer 127, the insulating layer 125, the mask layer 118B, the mask layer 118G, and the mask layer 118R, it is possible to prevent poor connection between the light-emitting devices due to disconnection of the common layer 114 and the common electrode 115 and an increase in electrical resistance due to a locally thin portion of the film thickness, thereby improving the display quality of the display device of one embodiment of the present invention.

[0498] After the layers 113B, 113G, and 113R are partially exposed, further heat treatment can be performed. This heat treatment can remove water contained in the EL layer and water adsorbed to the surface of the EL layer. Furthermore, this heat treatment may change the shape of the insulating layer 127. Specifically, the insulating layer 127 may expand to cover at least one of the ends of the insulating layer 125, the ends of the mask layers 118B, 118G, and 118R, and the top surfaces of the layers 113B, 113G, and 113R. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 120° C. A reduced-pressure atmosphere is preferable because dehydration can be achieved at a lower temperature. However, the temperature range of the heat treatment is preferably set appropriately, taking into account the heat resistance temperature of the EL layer. In addition, when the heat resistance temperature of the EL layer is taken into consideration, a temperature of 70° C. or more and 120° C. or less is particularly suitable within the above temperature range.

[0499] The insulating layer 127 may be configured to cover the entire end portion of the mask layer 118 .

[0500] Subsequently, the common layer 114 and the common electrode 115 are formed in this order on the insulating layer 127, the layer 113B, the layer 113G, and the layer 113R. Furthermore, a protective layer 131 is formed (FIG. 37B).

[0501] Subsequently, the substrate 120 is attached onto the protective layer 131 using the resin layer 122, whereby a display device can be manufactured (FIGS. 6A and 7B).

[0502] The common layer 114 can be formed by, for example, a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0503] For example, sputtering or vacuum deposition can be used to form the common electrode 115. Alternatively, a film formed by deposition and a film formed by sputtering may be stacked.

[0504] The protective layer 131 can be formed by, for example, vacuum deposition, sputtering, CVD, or ALD.

[0505] Through the above steps, a display device which is one embodiment of the present invention can be manufactured.

[0506] [Fabrication Method Example 2] Here, an example of a method for fabricating the display device shown in Fig. 11A will be described with reference to Figs. 38A to 41C. Figs. 38A to 41C show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 shown in Fig. 1A side by side. Fig. 13B can be referred to for the structure of the connection portion 140. Note that a structure in which the mask layer (here, mask layer 118B) does not have a region in contact with either the conductive layer 123 or the conductive layer 135p can also be used (see Fig. 5B).

[0507] First, the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p are formed on the substrate 103.

[0508] Next, a light-shielding film 109f that will become the light-shielding layer 109 is formed on the substrate 103, the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p ( FIG. 38A ). For a method of forming the light-shielding film 109f, the description of the method of forming the light-shielding layer 109 in the above-mentioned Manufacturing Method Example 1 can be referred to.

[0509] It is preferable to perform heat treatment after the light-shielding film 109f is formed. For the heat treatment, the description of the heat treatment after the formation of the light-shielding layer 109 in the above-described Manufacturing Method Example 1 can be referred to.

[0510] Next, an insulating film 184f that will become the insulating layer 184 is formed on the light-shielding film 109f ( FIG. 38B ). The insulating film 184f can be formed by, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, or vacuum deposition. The ALD method is preferable for forming the insulating film 184f (later the insulating layer 184), since it can form a dense film with high barrier properties even at low temperatures. For example, an aluminum oxide film formed by the ALD method can be suitably used as the insulating film 184f.

[0511] A film (e.g., insulating film 184f) formed after the light-shielding film 109f is formed at a temperature lower than the heat-resistant temperature of the light-shielding film 109f (the subsequent light-shielding layer 109). For the substrate temperature when forming the film, the description of the above-mentioned Manufacturing Method Example 1 can be referred to.

[0512] Subsequently, an insulating film 182f that will become the insulating layer 182 is formed on the insulating film 184f. The insulating film 182f can be formed by, for example, a CVD method.

[0513] Subsequently, a mask film 191f is formed on the insulating film 182f, a mask film 193f is formed on the mask film 191f, and a mask film 195f is formed on the mask film 193f (FIG. 38C).

[0514] The mask film 191f serves as a mask layer when later processing the insulating film 182f, the insulating film 184f, and the light-shielding film 109f. The mask layer functions as a hard mask. The conductivity of the mask film 191f is not particularly limited. For example, an insulating film or a conductive film can be used as the mask film 191f. Typically, tungsten can be used as the mask film 191f.

[0515] The mask films 193f and 195f may each be made of a non-photosensitive resin. For example, a spin-on-carbon (SOC) film or a spin-on-glass (SOG) film may be used as the mask films 193f and 195f. The mask films 193f and 195f may be formed by, for example, a spin coating method. Typically, an SOC film may be used as the mask film 193f, and an SOG film may be used as the mask film 195f. For example, the spin coating method may be used to form the mask films 193f and 195f.

[0516] Subsequently, a resist mask 197 is formed on the mask film 195f by lithography (FIG. 38C). The resist mask 197 has openings in regions where the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, the conductive layer 170p, the layer 259R, the layer 259G, the layer 259B, and the layer 259p will be provided later.

[0517] Next, the mask film 195f is processed using the resist mask 197 as a mask to form a mask layer 195 having an opening. Then, the resist mask 197 is removed (FIG. 39A). For example, dry etching can be suitably used to process the mask film 195f. When an SOG film is used as the mask film 195f, for example, CHF ３ and O ２ The resist mask 197 can be preferably removed when processing the mask film 195f.

[0518] Next, the mask film 193f is processed using the mask layer 195 as a mask to form the mask layer 193 having an opening. Then, the mask layer 195 is removed (FIG. 39B). For example, a dry etching method can be suitably used to form the mask layer 193. When an SOC film is used as the mask film 193f, for example, H is used as an etching gas for the mask film 193f. ２ and N ２ The mask layer 195 can be preferably removed when processing the mask film 193f.

[0519] Next, the mask film 191f, the insulating film 182f, and the insulating film 184f are processed using the mask layer 193 as a mask, to form the mask layer 191, the insulating layer 182, and the insulating layer 184 having openings (FIG. 39C). The mask film 191f, the insulating film 182f, and the insulating film 184f can be processed preferably by, for example, dry etching. When a tungsten film is used as the mask film 191f, the etching gas for the mask film 191f can be, for example, CF ４ and Cl ２ When a silicon oxide film is used as the insulating film 182f, for example, CHF 2 O 4 can be used as an etching gas for the insulating film 182f. ３ and O ２ When an aluminum oxide film is used as the insulating film 184f, for example, BCl 2 can be used as an etching gas for the insulating film 184f. ３ can be suitably used.

[0520] Next, the light-shielding film 109f is processed using the mask layer 191 as a mask to form the light-shielding layer 109 having openings. Then, the mask layer 193 is removed (FIG. 40A). As a result, the light-shielding layer 109 having openings 199R, 199G, 199B, and 199p, the insulating layer 184, the insulating layer 182, and the mask layer 191 are formed. For example, dry etching can be suitably used to process the light-shielding film 109f. For example, O is used as an etching gas for the light-shielding film 109f. ２ and N ２ , H ２ and N ２ , or CO ２ It is possible to preferably use the following. When processing the light-shielding film 109f, the mask layer 193 can also be removed.

[0521] Subsequently, a film 259f that will become layers 259R, 259G, 259B, and 259p is formed so as to cover openings 199R, 199G, 199B, and 199p (FIG. 40B).

[0522] Subsequently, a portion of the film 259f is removed to form layers 259R, 259G, 259B, and 259p ( FIG. 40C ). This exposes the upper surface of a portion of the conductive layer 250R, a portion of the conductive layer 250G, a portion of the conductive layer 250B, a portion of the conductive layer 250p, and the upper surface of the mask layer 191. The layers 259R, 259G, 259B, and 259p can be formed preferably by an anisotropic dry etching method.

[0523] Subsequently, a conductive film 170f that will become the conductive layers 170R, 170G, 170B and 170p is formed so as to cover the mask layer 191, the openings 199R, 199G, 199B and 199p (FIG. 41A).

[0524] Next, a portion of the conductive film 170f is removed, and then the mask layer 191 is removed ( FIG. 41B ). This exposes the upper surfaces of the insulating layer 182, the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, and the conductive layer 170p. The conductive film 170f and the mask layer 191 can be removed by, for example, dry etching or CMP. CMP is particularly preferred. At this time, it is preferable to also remove the regions of the layers 259R, 259G, 259B, and 259p that contact the mask layer 191. This causes the heights of the conductive layers 170R, 170G, 170B, 170p, 259R, 259G, 259B, and 259p to coincide or approximately coincide with the height of the upper surface of the insulating layer 182. By making the heights of the upper surfaces of these layers the same or approximately the same, the flatness of the surface on which the light-emitting device 130 is formed is increased, unevenness in brightness is reduced, and a display device with high display quality can be obtained.

[0525] Subsequently, the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 123, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, and the conductive layer 135p are formed on the conductive layer 170R, the conductive layer 170G, the conductive layer 170B, the conductive layer 170p, the layer 259R, the layer 259G, the layer 259B, the layer 259p, and the insulating layer 182 (Figure 41C).

[0526] The description of the above-mentioned Manufacturing Method 1 can be referred to for the formation of the pixel electrodes 111R, 111G, 111B, the conductive layer 123, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, and the conductive layer 135p and subsequent processes.

[0527] Through the above steps, a display device which is one embodiment of the present invention can be manufactured.

[0528] [Fabrication Method Example 3] Here, an example of a fabrication method for the display device shown in Fig. 15A will be described with reference to Fig. 42A to Fig. 43D. Fig. 42A to Fig. 43D show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 shown in Fig. 1A side by side. Fig. 20B can be referred to for the configuration of the connection portion 140.

[0529] First, the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p are formed on the substrate 103.

[0530] Next, a light-shielding film 109f that will become the light-shielding layer 109 is formed on the substrate 103, the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p ( FIG. 42A ). For a method of forming the light-shielding film 109f, the description of the method of forming the light-shielding layer 109 in the above-mentioned Manufacturing Method Example 1 can be referred to.

[0531] It is preferable to perform heat treatment after the light-shielding film 109f is formed. For the heat treatment, the description of the heat treatment after the light-shielding layer 109 in the above-mentioned Manufacturing Method Example 1 can be referred to.

[0532] Subsequently, an insulating film 186f that will become the insulating layer 186 is formed on the light-shielding film 109f (FIG. 42B).

[0533] A film (e.g., insulating film 186f) formed after the light-shielding film 109f is formed at a temperature lower than the heat-resistant temperature of the light-shielding film 109f (the subsequent light-shielding layer 109). For the substrate temperature when forming the film, the description of the above-mentioned Manufacturing Method Example 1 can be referred to.

[0534] Subsequently, a resist mask 189 is formed over the insulating film 186f by lithography (FIG. 42C). The resist mask 189 has openings in regions overlapping with the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p.

[0535] Next, using resist mask 189 as a mask, insulating film 186f and a portion of light-shielding film 109f are removed. This results in insulating layer 186 having openings 269R, 269G, 269B, and 269p, and light-shielding layer 109 having openings 257R, 257G, 257B, and 257p ( FIG. 42D ). Furthermore, conductive layer 250R is exposed in opening 257R, conductive layer 250G is exposed in opening 257G, conductive layer 250B is exposed in opening 257B, and conductive layer 250p is exposed in opening 257p.

[0536] Subsequently, the resist mask 189 is removed.

[0537] Next, a conductive film 105f that becomes conductive layer 105R, conductive layer 105G, conductive layer 105B, and conductive layer 105p is formed so as to cover insulating layer 186, opening 269R, opening 269G, opening 269B, opening 269p, opening 257R, opening 257G, opening 257B, and opening 257p (Figure 43A).

[0538] Next, layers 107R, 107G, and 107B are formed on the conductive film 105f (FIG. 43B). The layers 107R, 107G, and 107B can be formed, for example, by applying a photosensitive resin, exposing it to light, and developing it. Note that a layer 107p can also be provided in the connection portion 140 (see FIGS. 18A to 18D).

[0539] Subsequently, a conductive film 111f that will become the pixel electrodes 111R, 111G, 111B, and conductive layer 123 is formed on the conductive film 105f, the layer 107R, the layer 107G, and the layer 107B. Then, a conductive film 135f that will become the conductive layers 135R, 135G, 135B, and 135p is formed on the conductive film 111f ( FIG. 43C ).

[0540] Subsequently, the conductive films 105f, 111f, and 135f are processed to form the conductive layers 105R, 105G, 105B, 105p, the pixel electrodes 111R, 111G, and 111B, the conductive layer 123, the conductive layer 135R, 135G, 135B, and 135p ( FIG. 43D ). These conductive layers can be formed by dry etching or wet etching, or both. Processing the conductive films 105f, 111f, and 135f in the same process can improve the productivity of the display device and reduce manufacturing costs. Furthermore, the edges of the conductive layer 105, the pixel electrode 111, and the conductive layer 135 can be aligned or approximately aligned. Note that some of these edges may not be aligned.

[0541] Here, an example is shown in which the conductive films 105f, 111f, and 135f are processed in the same process, but one embodiment of the present invention is not limited to this. Parts of these films may also be processed in different processes. For example, the conductive films 105f and 111f are formed and then processed to form the conductive layers 105R, 105G, 105B, 105p, the pixel electrodes 111R, 111G, 111B, and the conductive layer 123. Then, the conductive film 135f is formed and processed to form the conductive layers 135R, 135G, 135B, and 135p.

[0542] The description of the above-mentioned Manufacturing Method 1 can be referred to for the formation of the pixel electrodes 111R, 111G, 111B, the conductive layer 123, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, and the conductive layer 135p and subsequent processes.

[0543] Through the above steps, a display device which is one embodiment of the present invention can be manufactured.

[0544] [Fabrication Method Example 4] Here, an example of a fabrication method for the display device shown in Fig. 23A will be described with reference to Fig. 44A to Fig. 45C. Fig. 44A to Fig. 45C show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 shown in Fig. 1A side by side. For the configuration of the connection portion 140, refer to Fig. 20B.

[0545] First, the steps up to the formation of the conductive film 105f are performed in the same manner as in the above-described Manufacturing Method Example 3. Since the description of FIGS. 42A and 43A can be referred to for the steps up to the formation of the conductive film 105f, detailed description thereof will be omitted.

[0546] Next, a film 107f to be the layers 107R, 107G, and 107B is formed over the conductive film 105f ( FIG. 44A ). For example, a photosensitive resin can be applied as the film 107f. Here, an example is shown in which the film 107f is not provided in the connection portion 140; however, one embodiment of the present invention is not limited to this. Alternatively, the film 107f (the subsequent layer 107p) can be provided in the connection portion 140 (see FIGS. 18A to 18D ).

[0547] Subsequently, a mask film 193f is formed over the conductive film 105f and the film 107f, and a resist mask 195R, a resist mask 195G, and a resist mask 195B are formed over the mask film 193f (FIG. 44A). The resist mask 195R, the resist mask 195G, and the resist mask 195B are provided in regions where the layer 107R, the layer 107G, and the layer 107B are provided.

[0548] The mask film 193f is processed using the resist mask 195R, the resist mask 195G, and the resist mask 195B as masks to form mask layers 193R, 193G, and 193B. Note that, hereinafter, the mask layers 193R, 193G, and 193B may be collectively referred to as mask layers 193.

[0549] Subsequently, the resist masks 195R, 195G, and 195B are removed (FIG. 44B).

[0550] Subsequently, the film 107f is processed using the mask layers 193R, 193G, and 193B as masks to form layers 107R, 107G, and 107B (FIG. 44C).

[0551] The mask layer 193 functions as a hard mask when forming the layer 107. There are no particular limitations on the conductivity of the mask layer 193. For the mask layer 193, it is preferable to use a material that is highly resistant to the formation of the layer 107, specifically, a material that has a large etching selectivity with respect to the layer 107.

[0552] When resin is used for the layers 107R, 107G, and 107B, dry etching using a gas containing one or both of chlorine and fluorine can be suitably used to form them. Oxygen gas can be mixed with the aforementioned gases. The mask layers 193R, 193G, and 193B preferably have a slow etching rate when dry etching using a gas containing one or both of chlorine and fluorine. The mask layer 193 can be made of one or more of In—Sn oxide (ITO), In—Si—Sn oxide (ITSO), In—Zn oxide (IZO®), In—Ga—Zn oxide (IGZO), and In—Sn—Zn oxide (ITZO®). Alternatively, dry etching using a gas containing oxygen can be suitably used to form the layer 107. The mask layer 193 can be made of one or more of molybdenum, tungsten, titanium, and aluminum.

[0553] Next, the mask layers 193R, 193G, and 193B are removed (FIG. 45A). Wet etching can be suitably used to remove the mask layers 193R, 193G, and 193B.

[0554] By forming the layers 107R, 107G, and 107B using a hard mask, the distance between adjacent layers 107 can be narrowed, and the distance between adjacent light-emitting devices can be narrowed. Note that the layer 107 can also be formed without using a hard mask. For example, when a photosensitive resin is used for the layer 107, the layer 107 can be formed by exposing and developing the film 107f.

[0555] Here, the example shows the case where the resist mask 195R, the resist mask 195G, and the resist mask 195B are removed, and then the film 107f is processed using the mask layers 193R, 193G, and 193B to form the layers 107R, 107G, and 107B, but one embodiment of the present invention is not limited to this. The film 107f can also be processed using the resist mask 195R, the resist mask 195G, and the resist mask 195B, the mask layers 193R, the mask layer 193G, and the mask layer 193B as masks to form the layers 107R, 107G, and 107B without removing the resist mask 195R, the resist mask 195G, and the resist mask 195B. Then, the resist mask 195R, the resist mask 195G, and the resist mask 195B, the mask layers 193R, the mask layer 193G, and the mask layer 193B are removed.

[0556] Subsequently, a conductive film 111f that will become the pixel electrodes 111R, 111G, 111B, and conductive layer 123 is formed on the conductive film 105f, the layer 107R, the layer 107G, and the layer 107B. Then, a conductive film 135f that will become the conductive layers 135R, 135G, 135B, and 135p is formed on the conductive film 111f ( FIG. 45B ).

[0557] Subsequently, the conductive films 105f, 111f, and 135f are processed to form the conductive layers 105R, 105G, 105B, 105p, the pixel electrodes 111R, 111G, and 111B, the conductive layer 123, the conductive layer 135R, 135G, 135B, and 135p ( FIG. 45C ). The formation of these conductive layers can be referred to in the description of the above-mentioned Fabrication Method 3.

[0558] The description of the above-mentioned Manufacturing Method 1 can be referred to for the formation of the pixel electrodes 111R, 111G, 111B, the conductive layer 123, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, and the conductive layer 135p and subsequent processes.

[0559] Through the above steps, a display device which is one embodiment of the present invention can be manufactured.

[0560] This embodiment mode can be combined with other embodiment modes as appropriate.

[0561] Embodiment 3 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0562] [Pixel Layout] In this embodiment, pixel layouts different from that shown in FIG. 1A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0563] The top surface shape of the sub-pixels shown in the drawings in this embodiment corresponds to the top surface shape of the light-emitting region (or light-receiving region).

[0564] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0565] The layout of the circuits constituting the sub-pixels is not limited to the range of the sub-pixels shown in the figure, and can also be arranged outside of the sub-pixels.

[0566] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 46A. The pixel 110 shown in Fig. 46A is composed of three subpixels: a subpixel 110a, a subpixel 110b, and a subpixel 110c.

[0567] The pixel 110 shown in Figure 46B includes a subpixel 110a having a generally trapezoidal or triangular top surface shape with rounded corners, a subpixel 110b having a generally trapezoidal or triangular top surface shape with rounded corners, and a subpixel 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110b has a larger light-emitting region than the subpixel 110a. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel can be.

[0568] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 46C. Fig. 46C shows an example in which the pixel 124a having the sub-pixels 110a and 110b and the pixel 124b having the sub-pixels 110b and 110c are arranged alternately.

[0569] The pixels 124a and 124b shown in Figures 46D to 46F are arranged in a delta arrangement. The pixel 124a has two subpixels (subpixel 110a and subpixel 110b) in the top row (first row) and one subpixel (subpixel 110c) in the bottom row (second row). The pixel 124b has one subpixel (subpixel 110c) in the top row (first row) and two subpixels (subpixel 110a and subpixel 110b) in the bottom row (second row).

[0570] Figure 46D shows an example in which each sub-pixel has an approximately rectangular top surface shape with rounded corners, Figure 46E shows an example in which each sub-pixel has a circular top surface shape, and Figure 46F shows an example in which each sub-pixel has an approximately hexagonal top surface shape with rounded corners.

[0571] In Figure 46F, each subpixel is arranged inside a densely arranged hexagonal region. When focusing on one subpixel, it is arranged so that it is surrounded by six other subpixels. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110a, three subpixels 110b and three subpixels 110c are arranged alternately so as to surround it.

[0572] 46G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the row direction (for example, subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned.

[0573] 46A to 46G, it is preferable that the subpixel 110a be the subpixel R that emits red light, the...

Claims

A light-emitting device, a light-shielding layer, a first conductive layer, a second conductive layer, and a first insulating layer, wherein the light-emitting device includes a first electrode, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer, the light-shielding layer is located on the first conductive layer, the first insulating layer is located on the light-shielding layer, the second conductive layer is embedded in the light-shielding layer and the first insulating layer and has a region in contact with the upper surface of the first conductive layer, the first electrode has a region in contact with the upper surface of the first insulating layer and a region in contact with the upper surface of the second conductive layer, the light-shielding layer contains an organic material, the first insulating layer contains an inorganic material, a display device. 　 In claim 1, the first insulating layer contains silicon and oxygen, a display device. 　 In claim 1, the light-shielding layer has a region on the first conductive layer with a thickness of 200 nm or more and 2000 nm or less, a display device. 　 In claim 1, the height of the upper surface of the first insulating layer is the same as or substantially the same as the height of the upper surface of the second conductive layer, a display device. 　 In any one of claims 1 to 4, it has a second insulating layer, the second insulating layer is located between the light-shielding layer and the first insulating layer, the second insulating layer contains aluminum and oxygen, a display device. 　 In any one of claims 1 to 4, it has a layer, the layer is located between the light-shielding layer and the second conductive layer, the layer contains aluminum and oxygen, a display device. 　 A light-emitting device, a light-shielding layer, a first conductive layer, a second conductive layer, a layer, and a first insulating layer, wherein the light-emitting device includes a first electrode, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer, the light-shielding layer is located on the first conductive layer, the first insulating layer is located on the light-shielding layer, the first insulating layer and the light-shielding layer have an opening reaching the first conductive layer, the second conductive layer has a region in contact with the upper surface and side surface of the first insulating layer, the side surface of the light-shielding layer, and the upper surface of the first conductive layer, the layer has a region overlapping the first conductive layer through the second conductive layer at the opening, the first electrode has a region in contact with the upper surface of the layer and the upper surface of the second conductive layer, the light-shielding layer contains an organic material, the first insulating layer contains an inorganic material, a display device. 　 In claim 7, the first insulating layer contains silicon and nitrogen, a display device. 　 In claim 7, the light-shielding layer has a region with a thickness of 200 nm or more and 2000 nm or less on the first conductive layer, a display device. 　 In claim 7, the end portion of the first electrode coincides with or substantially coincides with the end portion of the second conductive layer, a display device. In any one of claims 7 to 10, the layer has a region overlapping with the upper surface of the first insulating layer through the second conductive layer, a display device. 　 In any one of claims 7 to 10, the layer has an organic material, a display device.

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