Semiconductor element, display device, and electronic apparatus

Abstract

Provided is a semiconductor element that can be miniaturized.　This semiconductor element comprises: an oxide semiconductor layer having an outer-circumferential lateral surface; a first conductive part that is connected to the outer-circumferential lateral surface and that is disposed extending from the outer-circumferential lateral surface in a first thickness direction of the oxide semiconductor layer; and a first electrode that is connected to the first conductive part.

Description

Semiconductor elements, display devices and electronic devices

[0001] The present disclosure relates to a semiconductor element, and a display device and electronic device including the same.

[0002] In recent years, semiconductor elements having an oxide semiconductor layer have attracted attention as semiconductor elements such as transistors. Various configurations have been proposed for this type of semiconductor element in order to improve its characteristics. For example, Patent Document 1 discloses a semiconductor element having a structure in which the outer edge of an island-shaped oxide semiconductor layer is covered with a source electrode or a drain electrode.

[0003] JP 2013-179295 A

[0004] In recent years, there has been a demand for miniaturization of semiconductor elements. However, in the semiconductor element described in Patent Document 1, the source electrode and the drain electrode are formed on the main surface of the oxide semiconductor layer, and therefore it is difficult to reduce the footprint of the source electrode and the drain electrode on the main surface of the oxide semiconductor layer. Therefore, there is a risk that it will be difficult to miniaturize the semiconductor element.

[0005] An object of the present disclosure is to provide a semiconductor element that can be miniaturized, and a display device and electronic device that include the same.

[0006] In order to solve the above-mentioned problems, a first semiconductor element according to the present disclosure includes: an oxide semiconductor layer having an outer peripheral side surface; a first conductive portion connected to the outer peripheral side surface and extending from the outer peripheral side surface in a first thickness direction of the oxide semiconductor layer; and a first electrode connected to the first conductive portion.

[0007] The second semiconductor element according to the present disclosure includes: a first oxide semiconductor layer having a first outer peripheral side surface; a second oxide semiconductor layer having a second outer peripheral side surface; a first conductive portion connected to the first outer peripheral side surface and the second outer peripheral side surface and extending from the first outer peripheral side surface in one thickness direction of the first oxide semiconductor layer; and a first electrode connected to the first conductive portion.

[0008] FIG. 1 is a schematic diagram of a display device according to an embodiment of the present disclosure. FIG. 2 is a diagram of a pixel circuit. FIG. 3 is a cross-sectional view of a display device according to an embodiment of the present disclosure. FIG. 4 is a cross-sectional view of a circuit substrate. FIG. 5A is a cross-sectional view of a transistor layer. FIG. 5B is a plan view of a transistor layer. FIG. 6A is a cross-sectional view of an OLED layer having a single layer of light-emitting units. FIG. 6B is a cross-sectional view of an OLED layer having two layers of light-emitting units. FIGS. 7A, 7B, 7C, and 7D are cross-sectional views illustrating an example of a process for forming a transistor layer. FIGS. 8A, 8B, and 8C are cross-sectional views illustrating an example of a process for forming a transistor layer. FIG. 9A is a cross-sectional view of a transistor layer of a display device according to a comparative example. FIG. 9B is a plan view of a transistor layer of a display device according to the comparative example. FIG. 10 is a cross-sectional view of a transistor layer according to a modification. FIG. 11 is a cross-sectional view of a transistor layer according to a modification. FIG. 12 is a cross-sectional view of a transistor layer according to a modification. FIG. 13 is a cross-sectional view of a transistor layer according to a modification. FIG. 14 is a cross-sectional view of a transistor layer according to a modification. FIG. 15 is a cross-sectional view of a transistor layer according to a modification. FIG. 16 is a cross-sectional view of a transistor layer according to a modification. 17A and 17B are wiring diagrams of a circuit configured with the stacked structure shown in FIG. 16 . FIG. 18 is a plan view of a transistor layer according to a modified example. FIG. 19 is a cross-sectional view of a first example of a leakage suppression structure. FIG. 20 is a cross-sectional view of a second example of a leakage suppression structure. FIG. 21 is a cross-sectional view of a third example of a leakage suppression structure. FIG. 22 is a cross-sectional view of a fourth example of a leakage suppression structure. FIG. 23 is a cross-sectional view of a fifth example of a leakage suppression structure. FIG. 24 is a cross-sectional view of a sixth example of a leakage suppression structure. FIG. 25 is a cross-sectional view of a seventh example of a leakage suppression structure. FIG. 26 is an enlarged cross-sectional view of the groove shown in FIG. 25 . FIG. 27 is a cross-sectional view of an eighth example of a leakage suppression structure. FIG. 28 is a cross-sectional view of a ninth example of a leakage suppression structure. FIG. 29 is a plan view for explaining the arrangement of the first electrode and the third electrode. 30A, 30B, and 30C are conceptual diagrams for explaining the relationship between a normal line LN passing through the center of the light-emitting portion, a normal line LN′ passing through the center of the lens member, and a normal line LN″ passing through the center of the wavelength selecting portion, respectively.31 is a conceptual diagram for explaining the relationship between a normal LN passing through the center of the light emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selecting section. FIGS. 32A and 32B are conceptual diagrams for explaining the relationship between a normal LN passing through the center of the light emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selecting section, respectively. FIG. 33 is a conceptual diagram for explaining the relationship between a normal LN passing through the center of the light emitting section, a normal LN' passing through the center of the lens member, and a normal LN" passing through the center of the wavelength selecting section. FIG. 34A is a schematic cross-sectional view for explaining a first example of a resonator structure. FIG. 34B is a schematic cross-sectional view for explaining a second example of a resonator structure. FIG. 35A is a schematic cross-sectional view for explaining a third example of a resonator structure. FIG. 35B is a schematic cross-sectional view for explaining a fourth example of a resonator structure. FIG. 36A is a schematic cross-sectional view for explaining a fifth example of a resonator structure. FIG. 36B is a schematic cross-sectional view for explaining a sixth example of a resonator structure. FIG. 37 is a schematic cross-sectional view for explaining a seventh example of a resonator structure. FIG. 38A is a front view of a digital still camera. FIG. 38B is a rear view of a digital still camera. FIG. 39 is a perspective view of a head-mounted display. FIG. 40 is a perspective view of a television device. FIG. 41 is a perspective view of a see-through head-mounted display. FIG. 42 is a perspective view of a smartphone. FIG. 43A is a view showing the interior of a vehicle from the rear to the front of the vehicle. FIG. 43B is a view showing the interior of a vehicle from diagonally rear to diagonally front of the vehicle.

[0009] Embodiments of the present disclosure will be described in the following order: 1. General description of the light-emitting element, display device, and electronic device according to the present disclosure 2. One embodiment (example of a display device) 3. Modification 4. Example of a leakage suppression structure 5. Relationship between normals passing through the centers of the light-emitting section, lens member, and wavelength selection section 6. Example of a resonator structure 7. Application example (example of an electronic device)

[0010] The embodiments and the like described below are preferred specific examples of the present disclosure, and the contents of the present disclosure are not limited to these embodiments and the like. In all the drawings of the following embodiments, the same or corresponding parts are denoted by the same reference numerals. To avoid cluttering the illustrations, only some of the components may be denoted by reference numerals, or the illustrations may be simplified, enlarged, or reduced in size.

[0011] <1. General Description of Light-Emitting Element, Display Device, and Electronic Device According to the Present Disclosure> In the first semiconductor element according to the present disclosure, the first electrode and the outer peripheral side surface of the oxide semiconductor layer are connected via a first conductive portion extending in the first thickness direction of the oxide semiconductor layer, thereby reducing the footprint of the first conductive portion and enabling the miniaturization of the first semiconductor element. Furthermore, since the distance between the first electrode and the active region of the oxide semiconductor layer can be increased, variations in the resistance of the surface of the oxide semiconductor layer due to the diffusion of oxygen and hydrogen, etc., can be suppressed during the process of forming the first electrode. Therefore, variations in the characteristics of the first semiconductor element can be suppressed.

[0012] The first semiconductor element according to the present disclosure preferably includes a second conductive portion connected to a central portion of the oxide semiconductor layer and extending from the central portion in a first thickness direction or a second thickness direction opposite to the first thickness direction, a second electrode connected to the second conductive portion, and a first gate electrode provided between the peripheral side surface and the central portion in a plan view. This allows the second electrode and the central portion of the oxide semiconductor layer to be connected via the second conductive portion extending in the first thickness direction or the second thickness direction of the oxide semiconductor layer, thereby increasing the distance between the second electrode and the active region of the oxide semiconductor layer. Therefore, in the process of forming the second electrode, variations in the resistance of the surface of the oxide semiconductor layer due to the diffusion of oxygen and hydrogen, etc., can be suppressed. This suppresses variations in the characteristics of the first semiconductor element.

[0013] In the first semiconductor element according to the present disclosure, the first gate electrode and the oxide semiconductor layer preferably have a ring-shaped configuration in plan view, and the central portion of the oxide semiconductor layer preferably corresponds to the inner peripheral side surface of the oxide semiconductor layer. Because the oxide semiconductor layer has a ring-shaped configuration in plan view, the side surface of the oxide semiconductor layer on the source region side can be separated from the side surface of the oxide semiconductor layer on the drain region side. This can suppress the generation of leakage paths resulting from etching gas, oxygen, hydrogen, and the like. Therefore, the first semiconductor element can be miniaturized while suppressing the generation of parasitic channels in the oxide semiconductor layer. The ring-shaped configuration of the first gate electrode and the oxide semiconductor layer in plan view is, for example, a circular ring, an elliptical ring, or a polygonal ring.

[0014] In the first semiconductor element according to the present disclosure, the first gate electrode, the first conductive portion, and the second conductive portion are preferably concentric in plan view.

[0015] In the first semiconductor element according to the present disclosure, the first conductive portion and the second conductive portion preferably have a cylindrical shape.

[0016] In the first semiconductor element according to the present disclosure, it is preferable that the first gate electrode has a ring shape in a plan view, and the central portion of the oxide semiconductor layer is a central portion of the first surface of the oxide semiconductor layer that is exposed through the opening of the first gate electrode. The ring shape of the first gate electrode in a plan view is, for example, a circular ring, an elliptical ring, or a polygonal ring, and the oxide semiconductor layer is, for example, a circular, elliptical, or polygonal shape in a plan view.

[0017] In the first semiconductor element according to the present disclosure, the first gate electrode and the first conductive portion preferably have a concentric shape with the second conductive portion at the center in a plan view.

[0018] In the first semiconductor element according to the present disclosure, the first conductive portion preferably has a cylindrical shape, and the second conductive portion preferably has a columnar shape. The columnar shape of the second conductive portion may be a solid columnar shape or a hollow columnar shape (i.e., a cylindrical shape).

[0019] The first semiconductor element according to the present disclosure preferably includes a second electrode provided in a central portion of the oxide semiconductor layer, and a first gate electrode provided between the outer peripheral side surface and the second electrode in a plan view. In this case, the first gate electrode may be provided on the first surface side of the oxide semiconductor layer, and the second electrode may be provided on the second surface side of the oxide semiconductor layer.

[0020] In the first semiconductor element according to the present disclosure, the oxide semiconductor layer preferably contains at least one metal selected from the group consisting of indium, gallium, and zinc.

[0021] In the first semiconductor element according to the present disclosure, the first conductive portion and the oxide semiconductor layer preferably contain the same type of metal, which allows the first conductive portion to be formed in a self-aligned manner by utilizing the growth of deposits (by-products) during processing of the oxide semiconductor layer.

[0022] In the first semiconductor element according to the present disclosure, the second conductive portion and the oxide semiconductor layer preferably contain the same type of metal, which allows the second conductive portion to be formed in a self-aligned manner by utilizing the growth of deposits (by-products) during processing of the oxide semiconductor layer.

[0023] In the first semiconductor element according to the present disclosure, the first conductive portion preferably has a first portion containing a transparent conductive material and a second portion containing a metal, and the oxide semiconductor layer and the first portion preferably contain the same type of metal. This allows the first portion to be formed in a self-aligned manner by utilizing the growth of deposits (by-products) during processing of the oxide semiconductor layer. Furthermore, the first conductive portion having the second portion containing a metal can compensate for the conductivity of the first conductive portion.

[0024] In the first semiconductor element according to the present disclosure, the second conductive portion preferably has a first portion containing a transparent conductive material and a second portion containing a metal, and the oxide semiconductor layer and the first portion preferably contain the same type of metal. This allows the first portion to be formed in a self-aligned manner by utilizing the growth of deposits (by-products) during processing of the oxide semiconductor layer. Furthermore, the second conductive portion having the second portion containing a metal can compensate for the conductivity of the second conductive portion.

[0025] The first semiconductor element according to the present disclosure further includes a first insulating layer provided on the first gate electrode so as to cover a side surface of the first gate electrode, and a second insulating layer provided on the first insulating layer, and the etching rate of the second insulating layer is preferably smaller than the etching rate of the first insulating layer, thereby allowing the second insulating layer to be used as a hard mask when etching the first insulating layer and the oxide semiconductor layer.

[0026] In the first semiconductor element according to the present disclosure, it is preferable that the first semiconductor element further includes a second gate electrode provided between the outer peripheral side surface and the central portion in a planar view, and that the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode.

[0027] In the second semiconductor element according to the present disclosure, the first electrode and the first peripheral side surface of the first oxide semiconductor layer, and the first electrode and the second peripheral side surface of the second oxide semiconductor layer, are connected via a first conductive portion extending in the first thickness direction of the first oxide semiconductor layer, thereby reducing the footprint of the first conductive portion and enabling the miniaturization of the second semiconductor element. Furthermore, since the distance between the first electrode and the active region of the first oxide semiconductor layer and the distance between the second electrode and the active region of the second oxide semiconductor layer can be increased, variations in the resistance of the surface of the first oxide semiconductor layer and the surface of the second oxide semiconductor layer, which are caused by the diffusion of oxygen and hydrogen, can be suppressed during the process of forming the first electrode. Therefore, variations in the characteristics of the second semiconductor element can be suppressed.

[0028] The second semiconductor element according to the present disclosure preferably includes a second conductive portion connected to a first central portion of the first oxide semiconductor layer and a second central portion of the second oxide semiconductor layer and extending from the first central portion in one of the first thickness directions, a second electrode connected to the second conductive portion, a first gate electrode provided between the first outer peripheral side surface and the first central portion in a plan view, and a second gate electrode provided between the second outer peripheral side surface and the second central portion in a plan view. This allows the second electrode and the first central portion of the first oxide semiconductor layer, and the second electrode and the second central portion of the second oxide semiconductor layer, to be connected via the second conductive portion extending in one of the thickness directions of the first oxide semiconductor layer. This allows the second electrode to be spaced apart from the active region of the first oxide semiconductor layer, and the second electrode to be spaced apart from the active region of the second oxide semiconductor layer. Therefore, in the process of forming the second electrode, variations in resistance between the surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer, which are caused by the diffusion of oxygen and hydrogen, can be suppressed. This suppresses variations in the characteristics of the second semiconductor element.

[0029] In the first semiconductor element and the second semiconductor element according to the present disclosure, one of the first electrode and the second electrode may be a source electrode, and the other of the first electrode and the second electrode may be a drain electrode.

[0030] A display device according to the present disclosure includes a circuit board including at least one of a first semiconductor element according to the present disclosure and a second semiconductor element according to the present disclosure, and a light-emitting element.

[0031] In the display device according to the present disclosure, it is preferable that the semiconductor element is a first semiconductor element, the circuit board further includes a second semiconductor element, and the first semiconductor element is provided above the second semiconductor element.

[0032] In the display device according to the present disclosure, the light-emitting element is preferably an organic light-emitting diode element, a light-emitting diode element, or a liquid crystal display element.

[0033] An electronic device according to the present disclosure includes a first semiconductor element according to the present disclosure and a second semiconductor element according to the present disclosure. More specifically, for example, the electronic device according to the present disclosure may include a display device according to the present disclosure. The electronic device may include an eyewear device such as a virtual reality (VR) device, a mixed reality (MR) device, or an augmented reality (AR) device, or may include an electronic viewfinder (EVF) or a small projector. The eyewear device also includes a headset.

[0034] In the present disclosure, "on member A" in a description such as "member B is provided on member A" indicates the relative positional relationship between member A and member B, and includes not only a state in which member B is located directly on member A without any other member therebetween, but also a state in which member B is located on member A with at least one other member therebetween.

[0035] 2. One Embodiment Overall Configuration of Display Device 1 An example of the overall configuration of a display device 1 according to an embodiment of the present disclosure will be described with reference to Fig. 1. The display device 1 includes a pixel array unit 30 and a drive circuit unit arranged around the pixel array unit 30.

[0036] The pixel array unit 30 includes a plurality of sub-pixels 2R, 2G, and 2B. The sub-pixel 2R is configured to emit red light (first light). The sub-pixel 2G is configured to emit green light (second light). The sub-pixel 2B is configured to emit blue light (third light). In the following description, when the sub-pixels 2R, 2G, and 2B are referred to collectively without any particular distinction, the sub-pixels 2R, 2G, and 2B may be simply referred to as sub-pixels 2. The plurality of sub-pixels 2 are two-dimensionally arranged on the circuit substrate 10 in a specified arrangement pattern. In one embodiment, an example will be described in which the specified arrangement pattern is a stripe arrangement, but the specified arrangement pattern is not limited to this and may be a square arrangement, a mosaic arrangement, a delta arrangement, or any other arrangement.

[0037] In this specification, a first direction and a second direction that are orthogonal to each other within the display surface of the display device 1 are referred to as the X-axis direction and the Y-axis direction, respectively, and a third direction that is perpendicular to the display surface of the display device 1 is referred to as the Z-axis direction. In one embodiment, an example will be described in which the X-axis direction is the horizontal direction (row direction) of the display surface, and the Y-axis direction is the vertical direction (column direction) of the display surface.

[0038] In one embodiment, an example will be described in which the display device 1 is a top-emission display device, but the type of the display device 1 is not limited to this example. The display device 1 may also be a microdisplay.

[0039] In one embodiment, an example will be described in which the display device 1 is configured to be capable of color display. More specifically, an example will be described in which one pixel (unit pixel / pixel), which is a unit for forming a color image, is configured from adjacent sub-pixels (sub-pixels) 2R, 2G, and 2B of three primary colors. However, the configuration of one pixel is not limited to this example, and one pixel may be configured from a combination of the sub-pixels 2R, 2G, and 2B of the three primary colors and further sub-pixels of one or more colors.

[0040] The drive circuit unit drives each sub-pixel 2 of the pixel array unit 30. The drive circuit unit includes a write scan unit 31, a first drive scan unit 32, a second drive scan unit 33, and a signal output unit 34. The write scan unit 31, the first drive scan unit 32, and the signal output unit 34 are mounted on the same circuit board 10 as the pixel array unit 30.

[0041] In the pixel array section 30, the sub-pixels 2 are arranged in m rows and n columns, and scanning lines 31a (31a １ ~31a ｍ ), first drive line 32a (32a １ ~32a ｍ ) and the second driving line 33a (33a １ ~33a ｍ ) are wired for each pixel row. Furthermore, for the arrangement of the sub-pixels 2 in m rows and n columns, signal lines 34a (34a １ ~34a ｎ ) is wired for each pixel column.

[0042] Scanning line 31a １ ~31a ｍ are electrically connected to the output terminals of the corresponding rows of the write scanning unit 31. １ ~32a ｍ are electrically connected to the output terminals of the corresponding rows of the first driving scanning unit 32. １ ~33a ｍ ) are connected to the output terminals of the corresponding rows of the second driving scanning unit 33. １ ~34a ｎ are electrically connected to the output terminals of the corresponding columns of the signal output section 34, respectively.

[0043] The write scanning unit 31 is configured by a shift register circuit or the like. When writing a signal voltage of a video signal to each sub-pixel 2 of the pixel array unit 30, the write scanning unit 31 scans the scan lines 31a (31a １ ~31a ｍ ) to the write scanning signal WS (WS １ ~WS ｍ ) are sequentially supplied, the sub-pixels 2 of the pixel array section 30 can be scanned in order row by row.

[0044] The first drive scanning section 32 is configured by a shift register circuit and the like, similar to the write scanning section 31. The first drive scanning section 32 synchronizes with the line-sequential scanning by the write scanning section 31, and drives the first drive lines 32a (32a １ ~32a ｍ ) to the light emission control signal DS (DS １ ~DS ｍ ) can control whether the sub-pixel 2 emits light or not (extinguishes light). In one embodiment, the display device 1 does not need to be provided with the first drive scanning unit 32 that can control whether the sub-pixel 2 emits light or not (extinguishes light).

[0045] The second drive scanning section 33 is configured with a shift register circuit and the like, similar to the write scanning section 31. The second drive scanning section 33 synchronizes with the line-sequential scanning by the write scanning section 31 to drive the second drive lines 33a (33a １ ~33aｍ ) with respect to the drive signal AZ (AZ １ ~AZ ｍ ) can be supplied to control the sub-pixel 2 not to emit light during the non-light-emitting period.

[0046] The signal output unit 34 selectively outputs a signal voltage Vsig (hereinafter simply referred to as "signal voltage") of a video signal corresponding to luminance information supplied from a signal supply source (not shown) or a reference voltage Vofs. Here, the reference voltage Vofs is a voltage equivalent to a reference voltage for the signal voltage Vsig of the video signal, or a voltage close to this.

[0047] The signal voltage Vsig / reference voltage Vofs alternatively output from the signal output unit 34 is connected to a signal line 34a (34a １ ~34a ｎ ) to each sub-pixel 2 of the pixel array unit 30 in units of pixel rows selected by line-sequential scanning by the write scanning unit 31. That is, the signal output unit 34 can write the signal voltage Vsig in units of pixel rows (lines).

[0048] [Configuration of pixel circuit 2a] Next, an example of the circuit configuration of the pixel circuit 2a of the display device 1 according to an embodiment of the present disclosure will be described with reference to Fig. 2. A plurality of pixel circuits 2a are provided corresponding to each of a plurality of sub-pixels 2. That is, one pixel circuit 2a is provided for one sub-pixel 2.

[0049] 2, the pixel circuit 2a includes a light-emitting element 14 and a drive circuit for driving the light-emitting element 14. The light-emitting element 14 is a current-driven electro-optical element whose luminance changes depending on the value of the current flowing through the device. The cathode electrode of the light-emitting element 14 is electrically connected to, for example, a node Vss for outputting a current.

[0050] The drive circuit is composed of a drive transistor Tr1, a light-emission control transistor Tr2, a write transistor Tr3, a switching transistor Tr4, and capacitors C1 and C2. The anode electrode of the light-emitting element 14 is electrically connected to the drive transistor Tr1, and when a current flows through the drive transistor Tr1, the light-emitting element 14 emits light. The drive transistor Tr1, the light-emission control transistor Tr2, the write transistor Tr3, and the switching transistor Tr4 are, for example, field-effect transistors (FETs). More specifically, the drive transistor Tr1 and the light-emission control transistor Tr2 are P-channel transistors, and the write transistor Tr3 and the switching transistor Tr4 are N-channel transistors. However, the channels of the transistors Tr1, Tr2, Tr3, and Tr4 are not limited to this example.

[0051] Specifically, as shown in FIG. 2, the cathode electrode of the light-emitting element 14 is electrically connected to, for example, a node Vss for outputting a current. The source and drain of the write transistor Tr3 are electrically connected to a signal line (Vsig) and the gate (control terminal) of the drive transistor Tr1, respectively, and the gate of the write transistor Tr3 is electrically connected to a scanning line (WS). The write transistor Tr3 can write to the gate node (gate electrode) of the drive transistor Tr1 by sampling the signal voltage Vsig supplied from the signal output unit 34. Note that the expression "write" here means that a signal voltage is applied to the gate node and the potential of the gate node is maintained at a potential based on the signal voltage. The light-emitting control transistor Tr2 is connected to a power supply voltage V ＤＤ and the source node (source electrode) of the driving transistor Tr1, and controls whether the light emitting element 14 emits light or not when driven by the light emitting control signal DS.

[0052] The switching transistor Tr4 is connected between the drain node (drain electrode) of the drive transistor Tr1 and the current drain node Vss, and controls the light-emitting element 14 so that it does not emit light during its non-light-emitting period when driven by the drive signal AZ. That is, the switching transistor Tr4, when turned on, serves to form a path that bypasses the light-emitting element 14 (i.e., bypasses it) so that no current is supplied to the light-emitting element 14. By doing so, even if current leaks between the source and drain of the drive transistor Tr1 when the drive transistor Tr1 is switched off, the switching transistor Tr4 turns on, preventing current from being supplied to the light-emitting element 14. As a result, a decrease in contrast during black gradation display can be suppressed.

[0053] The capacitance element C1 is connected between the gate node and source node of the drive transistor Tr1, and holds the signal voltage Vsig written by sampling by the write transistor Tr3. The source and drain of the drive transistor Tr1 are electrically connected to the drain node (drain electrode) of the light-emission control transistor Tr2 and the anode electrode of the light-emitting element 14, respectively. The drive transistor Tr1 drives the light-emitting element 14 by passing a drive current corresponding to the held voltage of the capacitance element C1 through the light-emitting element 14.

[0054] The capacitance element C2 is connected between the source node of the driving transistor Tr1 and a node of a fixed potential (for example, a power supply voltage V ＤＤ The capacitance element C2 is connected between the driving transistor Tr1 and the gate-source voltage Vgs of the driving transistor Tr1 (power supply node of the driving transistor Tr1). The capacitance element C2 suppresses fluctuations in the source voltage of the driving transistor Tr1 when the signal voltage Vsig is written, and also has the effect of setting the gate-source voltage Vgs of the driving transistor Tr1 to the threshold voltage Vth of the driving transistor Tr1.

[0055] [Layer Structure of Display Device 1] Next, an example of the layer structure of the display device 1 according to an embodiment of the present disclosure will be described with reference to Figures 3 and 4. As shown in Figure 3, the display device 1 includes, in order, a circuit board 10, a plurality of light-emitting elements 14, an insulating layer 15, a protective layer 16, a planarization layer 17, a color filter 18, a planarization layer 19, a lens array 20, and a sealing resin layer 21. In one embodiment, an example in which the protective layer 16, the planarization layer 17, the color filter 18, the planarization layer 19, the lens array 20, and the sealing resin layer 21 are provided will be described. However, these layers are not essential components, and at least one of these layers may or may not be provided.

[0056] In this specification, of the two surfaces of each layer constituting the display device 1, the surface facing the display surface (top side) of the display device 1 may be referred to as the first surface (upper surface), and the surface facing the opposite side (bottom side) of the display surface of the display device 1 may be referred to as the second surface (lower surface). In this specification, the peripheral edge of the first surface refers to an area having a predetermined width extending inward from the peripheral edge of the first surface, and the peripheral edge of the second surface refers to an area having a predetermined width extending inward from the peripheral edge of the second surface. In this specification, the term "planar view" refers to a planar view when an object is viewed from a direction perpendicular to the first surface or the second surface.

[0057] (Circuit Board 10) The circuit board 10 is a so-called backplane, and is capable of driving a plurality of light-emitting elements 14. The circuit board 10 has a transistor layer 11, a wiring layer 12, and a transistor layer 13 in this order.

[0058] (Transistor Layer 11) The transistor layer 11 includes a plurality of drive transistors Tr1 and a plurality of light-emitting control transistors Tr2. The transistor layer 11 is composed of a semiconductor substrate 111 and an interlayer insulating layer 112. The semiconductor substrate 111 has a plurality of source regions (first diffusion regions) 113S, a plurality of drain regions (second diffusion regions) 113D, and an element isolation region 114 on the first surface side (the interlayer insulating layer 112 side). The source regions 113S and the drain regions 113D are provided separately from each other. The element isolation region 114 is provided adjacent to the source regions 113S.

[0059] The semiconductor substrate 111 is preferably a silicon substrate. The silicon substrate is made of, for example, single crystal silicon or polysilicon (polycrystalline silicon). A pair of one drive transistor Tr1 and one emission control transistor Tr2 is provided for one sub-pixel 2. In one embodiment, the channel regions of the drive transistor Tr1 and the emission control transistor Tr2 are N-type semiconductor regions, and the source region 113S and the drain region 113D of the drive transistor Tr1 and the emission control transistor Tr2 are P-type semiconductor regions. The drive transistor Tr1 and the emission control transistor Tr2 are an example of a second semiconductor element.

[0060] A plurality of gate insulating layers 115 and a plurality of gate electrodes 113G are provided in order on a first surface of the semiconductor substrate 111. More specifically, the gate insulating layer 115 is provided on a channel region between a source region 113S and a drain region 113D that are provided apart from each other. The gate electrode 113G is provided on the first surface of the gate insulating layer 115.

[0061] The gate insulating layer 115 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ The gate insulating layer 115 may have a single layer structure or a stacked layer structure.

[0062] The gate electrode 113G contains at least one metal selected from the group consisting of, for example, titanium (Ti), tungsten (W), tantalum (Ta), aluminum (Al), molybdenum (Mo), silver (Ag), neodymium (Nd), and copper (Cu). The gate electrode 113G may contain the at least one metal as a constituent element of an alloy, or may contain the at least one metal as a constituent element of a compound such as a nitride. A specific example of a nitride is titanium nitride (TiN). ｘThe gate electrode 113G may have a single-layer structure or a multi-layer structure. A specific example of the gate electrode 113G having a multi-layer structure is a multi-layer film of a titanium film and a titanium nitride film. In this case, the titanium film may be provided on the gate insulating layer 115 side.

[0063] The interlayer insulating layer 112 is provided on the first surface of the semiconductor substrate 111 so as to cover the plurality of gate electrodes 113G and the plurality of gate insulating layers 115. The interlayer insulating layer 112 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0064] The interlayer insulating layer 112 has a plurality of vias 11a １ , 11a ２ , 11a ３ , 11a ４ , 11a ５ Via 11a １ indicates the source region 113S of the driving transistor Tr1 and the wiring 12a of the wiring layer 12. １ The via 11a connects the ２ indicates the gate electrode 113G of the driving transistor Tr1 and the wiring 12a of the wiring layer 12. ２ The via 11a connects the ３ The drain region 113D common to the driving transistor Tr1 and the light-emission control transistor Tr2 and the wiring 12a of the wiring layer 12 are connected to each other. ３ The via 11a connects the ４ indicates the gate electrode 113G of the light-emission control transistor Tr2 and the wiring 12a of the wiring layer 12. ４ The via 11a connects the ５ indicates the source region 113S of the light-emitting control transistor Tr2 and the wiring 12a of the wiring layer 12. ５ The via 11a connects the １ , 11a ２ , 11a ３ , 11a ４ , 11a ５and each independently contain at least one metal selected from the group consisting of, for example, tungsten (W), copper (Cu), and titanium (Ti).

[0065] (Drive Transistor Tr1, Emission Control Transistor Tr2) In one embodiment, the drive transistor Tr1 and the emission control transistor Tr2 are P-channel transistors. The drive transistor Tr1 is a field-effect transistor, more specifically, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Note that in one embodiment, an example will be described in which the drive transistor Tr1 and the emission control transistor Tr2 are P-channel transistors, but the drive transistor Tr1 and the emission control transistor Tr2 are not limited to this example and may be N-channel transistors. The drive transistor Tr1 and the emission control transistor Tr2 include a gate electrode 113G, a gate insulating layer 115, a source region 113S, and a drain region 113D.

[0066] (Wiring Layer 12) The wiring layer 12 includes a plurality of wirings 12a. １ , 12a ２ , 12a ３ , 12a ４ , 12a ５ and a plurality of wirings 12b １ , 12b ２ , 12b ３ , 12b ５ and a plurality of wirings 12c １ , 12c ２ and a plurality of vias 12d １ , 12d ２ , 12d ３ , 12d ５ and a plurality of vias 12e １ , 12e ２ and an insulating layer 120 .

[0067] The insulating layer 120 has a plurality of stacked interlayer insulating layers (not shown). The insulating layer 120 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ) and silicon oxynitride (SiO ｘ N ｙ The plurality of interlayer insulating layers may be made of different insulating materials or may be made of the same insulating material.

[0068] A plurality of wirings 12a １ , 12a ２ , 12a ３ , 12a ４ , 12a ５ are provided on the first surface of the interlayer insulating layer 112. The interlayer insulating layer １ , 12a ２ , 12a ３ , 12a ４ , 12a ５ and a plurality of wirings 12b １ , 12b ２ , 12b ３ , 12b ５ The interlayer insulating layer is provided between the plurality of wirings 12b. １ , 12b ２ , 12b ３ , 12b ５ and a plurality of wirings 12c １ , 12c ２ It is set between.

[0069] Via 12d １ is the wiring 12a １ and wiring 12b １ Connect via 12d ２ is the wiring 12a ２ and wiring 12b ２ Connect via 12d ３ is the wiring 12a ３ and wiring 12b ３ Connect via 12d ５ is the wiring 12a ５ and wiring 12b ５ Connect via 12e １ is the wiring 12b １ and wiring 12c １ Connect via 12e ２ is the wiring 12b ２ and wiring 12c ２ Connect the

[0070] Wiring 12a １ , 12a ２ , 12a ３ , 12a ４ , 12a ５ , 12b １ , 12b ２ , 12b ３ , 12b ５ , wiring 12c １ , 12c ２ Each of the vias 12d independently contains at least one metal selected from the group consisting of, for example, tungsten (W) and copper (Cu). １ , 12d ２ , 12d ３ , 12d ５ , 12e １ , 12e ２ and each independently contain at least one metal selected from the group consisting of, for example, tungsten (W), copper (Cu), and titanium (Ti).

[0071] (Transistor Layer 13) Fig. 5A is a cross-sectional view of the transistor layer 13. Fig. 5B is a plan view of the transistor layer 13. The transistor layer 13 includes a plurality of write transistors Tr3, a plurality of switching transistors Tr4, and an interlayer insulating layer 130a. １ and the interlayer insulating layer 130a. ２ and the central insulating layer 130a ３ and the element isolation insulating layer 130a ４ The writing transistor Tr3 and the switching transistor Tr4 are an example of a semiconductor element (or a first semiconductor element). The writing transistor Tr3 is provided above the light-emitting control transistor Tr2, and the switching transistor Tr4 is provided above the driving transistor Tr1.

[0072] (Write Transistor Tr3) The write transistor Tr3 is a thin film transistor (TFT). In one embodiment, an example in which the write transistor Tr3 is an N-channel transistor will be described, but the write transistor Tr3 is not limited to this example and may be a P-channel transistor. The write transistor Tr3 has a stacked body 130, a drain electrode 131D, a gate electrode 131G, a conductive portion 132S, and a conductive portion 132D.

[0073] The laminate 130 has a square ring shape in a plan view. That is, the laminate 130 has an inner peripheral side surface 130S １ and outer peripheral side surface 130S ２ The stacked body 130 includes an oxide semiconductor layer 133, a gate insulating layer 134, a gate electrode 131G, and an interlayer insulating layer 135, which are arranged as an interlayer insulating layer 130a. １ are provided in order on the first surface.

[0074] The oxide semiconductor layer 133 is formed on the interlayer insulating layer 130a. １ The oxide semiconductor layer 133 is provided on the first surface of the gate electrode 131G. The oxide semiconductor layer 133 has a channel region (active layer) in a region facing the gate electrode 131G. In one embodiment, the channel region of the oxide semiconductor layer 133 is a P-type semiconductor region, and the source region and drain region of the oxide semiconductor layer 133 are N-type semiconductor regions. However, the oxide semiconductor layer 133 is not limited to this example, and the channel region of the oxide semiconductor layer 133 may be an N-type semiconductor region, and the source region and drain region of the oxide semiconductor layer 133 may be P-type semiconductor regions.

[0075] The oxide semiconductor layer 133 has a square ring shape in a plan view. The oxide semiconductor layer 133 includes an oxide semiconductor. The oxide semiconductor includes at least one metal selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), tin (Sn), titanium (Ti), and niobium (Nb). The oxide semiconductor may include at least one metal selected from the group consisting of indium (In), gallium (Ga), and zinc (Zn) among the above metals. More specifically, the oxide semiconductor includes at least one oxide selected from the group consisting of indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO). The write transistor Tr3 may have a semiconductor layer containing low-temperature polycrystalline silicon (LTPS), amorphous silicon (a-Si), or the like, instead of the oxide semiconductor layer 133.

[0076] The gate insulating layer 134 is provided between the oxide semiconductor layer 133 and the gate electrode 131G. The gate insulating layer 134 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ The gate insulating layer 134 may have a single layer structure or a multilayer structure.

[0077] The gate electrode 131G is provided on the first surface of the gate insulating layer 134. In plan view, the gate electrode 131G is provided between the outer peripheral side surface of the oxide semiconductor layer 133 and the center of the oxide semiconductor layer 133. In plan view, the gate electrode 131G is smaller than the gate insulating layer 134 and the oxide semiconductor layer 133, and the periphery of the gate electrode 131G is located inside the gate insulating layer 134. As a result, in plan view, the periphery of the first surface of the gate insulating layer 134 is exposed and not covered by the gate electrode 131G. The gate electrode 131G is connected to wiring (not shown). In plan view, the gate electrode 131G has a square ring shape.

[0078] The gate electrode 131G contains, for example, at least one metal selected from the group consisting of titanium (Ti), tungsten (W), tantalum (Ta), aluminum (Al), molybdenum (Mo), silver (Ag), neodymium (Nd), and copper (Cu). The gate electrode 131G may contain the at least one metal as a constituent element of an alloy, or may contain the at least one metal as a constituent element of a compound such as a nitride. Specific examples of nitrides include titanium nitride (TiN) and titanium nitride (TiN). ｘ The gate electrode 131G may have a single-layer structure or a multi-layer structure. A specific example of the gate electrode 131G having a multi-layer structure is a multi-layer film of a titanium film and a titanium nitride film. In this case, the titanium film may be provided on the gate insulating layer 134 side.

[0079] The interlayer insulating layer 135 is provided on the first surface of the gate electrode 131G and covers the side surfaces of the gate electrode 131G. The side surfaces of the interlayer insulating layer 135, the side surfaces of the gate insulating layer 134, and the side surfaces of the oxide semiconductor layer 133 are flush with each other. The interlayer insulating layer 135 insulates between the gate electrode 131G and the source electrode 131S, and between the gate electrode 131G and the drain electrode 131D. The interlayer insulating layer 135 has a square ring shape in a plan view.

[0080] The interlayer insulating layer 135 includes a first insulating layer 135a. １ and the second insulating layer 135a ２ The first insulating layer 135a １The second insulating layer 135a is provided on the first surface of the gate electrode 131G and covers the side surfaces of the gate electrode 131G. ２ is the first insulating layer 135a １ The second insulating layer 135a is provided on the first surface of the first insulating layer 135a. ２ The second insulating layer 135a may function as a protective layer, or may function as both a protective layer and a hard mask. ２ In order to use the second insulating layer 135a as a hard mask, ２ The etching rate of the first insulating layer 135a is １ It is preferable that the etching rate is smaller than the etching rate of the silicon dioxide.

[0081] First insulating layer 135a １ is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ The second insulating layer 135a includes at least one selected from the group consisting of ２ For example, silicon carbonitride (SiCN) is included.

[0082] The source electrode 131S is an example of a first electrode, and is provided on the outer peripheral side surface of the stacked body 130 in a plan view. More specifically, the source electrode 131S is formed on the element isolation insulating layer 130a. ４ The source electrode 131S is provided on the boundary between the first surface of the gate electrode 131G and the first surface of the interlayer insulating layer 135, and is connected to the upper end of the conductive portion 132S. The source electrode 131S has a square ring shape in a plan view. Examples of the material contained in the source electrode 131S include the same material as that of the gate electrode 131G.

[0083] The drain electrode 131D is an example of a second electrode, and is provided on a through hole in the center of the laminate 130 in a plan view. More specifically, the drain electrode 131D is formed on the central insulating layer 130a. ３The drain electrode 131D is provided on the boundary between the first surface of the first insulating layer 131 and the first surface of the interlayer insulating layer 135, and is connected to the upper end of the conductive portion 132D. The drain electrode 131D has a square shape in a plan view. The gate electrode 131G and the source electrode 131S have a concentric shape with the drain electrode 131D at the center in a plan view. Examples of the material contained in the drain electrode 131D include the same material as that of the gate electrode 131G. The source electrode 131S and the drain electrode 131D may be made of the same material.

[0084] The conductive portion 132S is an example of a first conductive portion, and is connected to the outer peripheral side surface of the oxide semiconductor layer 133 and extends from the outer peripheral side surface in the first thickness direction (+Z direction) of the oxide semiconductor layer 133. More specifically, the conductive portion 132S is connected to the outer peripheral side surface 130S of the stacked body 130. ２ The conductive portion 132S is provided on the circuit board 10 and extends from the outer peripheral side surface of the oxide semiconductor layer 133 to the outer peripheral side surface of the interlayer insulating layer 135. The conductive portion 132S connects the oxide semiconductor layer 133 and the source electrode 131S. The conductive portion 132S has a square ring shape in a plan view. More specifically, the conductive portion 132S has a square cylindrical shape with a hole that penetrates through it in the thickness direction of the circuit board 10. The laminate 130 is formed inside the hole.

[0085] The conductive portion 132D is an example of a second conductive portion, and is connected to the inner peripheral side surface of the oxide semiconductor layer 133 and extends from the inner peripheral side surface in the first thickness direction (+Z direction) of the oxide semiconductor layer 133. More specifically, the conductive portion 132D is connected to the inner peripheral side surface 130S of the stacked body 130. １ The conductive portion 132S is provided on the gate electrode 131G and extends from the inner peripheral side surface of the oxide semiconductor layer 133 to the inner peripheral side surface of the interlayer insulating layer 135. The conductive portion 132D connects the oxide semiconductor layer 133 and the drain electrode 131D. The conductive portion 132S has a square ring shape in a plan view. More specifically, the conductive portion 132D has a square cylindrical shape with a hole that penetrates in the thickness direction of the circuit board 10. The central insulating layer 130a3 is formed within the hole. The conductive portion 132S, the conductive portion 132D, and the gate electrode 131G are concentric in a plan view.

[0086] The conductive portions 132S and 132D and the oxide semiconductor layer 133 preferably contain the same type of metal. The conductive portions 132S and 132D contain, for example, a transparent conductive material. The transparent conductive material includes, for example, a deposit deposited by dry etching the oxide semiconductor layer 133. The transparent conductive material is, for example, a transparent conductive oxide.

[0087] (Switching Transistor Tr4) The switching transistor Tr4 is a thin film transistor (TFT). The switching transistor Tr4 has the same configuration as the writing transistor Tr3, and therefore a description of the configuration of the switching transistor Tr4 will be omitted.

[0088] (Interlayer insulating layer 130a １ ) Interlayer insulating layer 130a １ is provided on the first surface of the wiring layer 12. １ is the wiring 12c of the wiring layer 12 １ , 12c ２ and the oxide semiconductor layer 133 of the switching transistor Tr4, and the wiring 12c of the wiring layer 12 ２ and the oxide semiconductor layer 133 of the write transistor Tr3. １ is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0089] Via 13a １ , 13a ２ However, the interlayer insulating layer 130a １ and element isolation insulating layer 130a ４ The vias 13a are provided throughout the entire surface of the via hole 13a. １ is the source electrode 131S of the switching transistor Tr4 and the wiring 12c of the wiring layer 12. １ The via 13a connects the ２ represents the connection between the source electrode 131S of the write transistor Tr3 and the wiring 12c of the wiring layer 12. ２ The via 13a connects the １ , 13a ２and each independently contain at least one metal selected from the group consisting of, for example, tungsten (W), copper (Cu), and titanium (Ti).

[0090] (Interlayer insulating layer 130a ２ ) Interlayer insulating layer 130a ２ is provided on the first surface of the interlayer insulating layer 135 so as to cover the plurality of source electrodes 131S and the plurality of drain electrodes 131D. ２ The interlayer insulating layer 130a insulates between the first electrode 141 of the light emitting element 14 and the source electrode 131S, and between the first electrode 141 of the light emitting element 14 and the drain electrode 131D. ２ is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0091] Via 13b １ However, the interlayer insulating layer 130a ２ The via 13b is provided in the １ connects the source electrode 131S of the switching transistor Tr4 and the first electrode 141 of the light emitting element 14. １ For example, the metal layer contains at least one metal selected from the group consisting of tungsten (W), copper (Cu), titanium (Ti), and the like.

[0092] (Central insulating layer 130a ３ ) Central insulating layer 130a ３ is the interlayer insulating layer 130a １ The central insulating layer 130a is provided on the first surface of the ３ The central insulating layer 130a fills the through hole in the central portion of the laminate 130. ３ The central insulating layer 130a has a square prism shape. ３ is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0093] (Element isolation insulating layer 130a ４ Element isolation insulating layer 130a ４ is the interlayer insulating layer 130a １ The element isolation insulating layer 130a is provided on the first surface of the insulating layer 130a. ４ The element isolation insulating layer 130a separates the adjacent write transistor Tr3 and switching transistor Tr4. ４ is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0094] (Light-emitting element 14) The light-emitting element 14 can emit white light based on control by a drive circuit, etc. In one embodiment, the light-emitting element 14 is an organic light-emitting diode element (OLED element). The light-emitting element 14 is included in the sub-pixels 2R, 2G, and 2B of each color.

[0095] The plurality of light-emitting elements 14 are two-dimensionally arranged in a specified arrangement pattern on the first surface of the circuit board 10. The specified arrangement pattern is as described above as the specified arrangement pattern of the plurality of sub-pixels 2. The light-emitting element 14 includes a first electrode 141, an OLED layer 142, and a second electrode 143, which are arranged in this order on the first surface of the circuit board 10.

[0096] (First Electrode 141) The first electrode 141 is provided on the second surface side of the OLED layer 142. The first electrode 141 is an individual electrode provided individually for each of the plurality of light-emitting elements 14. In other words, the first electrode 141 is divided between the light-emitting elements 14 adjacent to each other in the in-plane direction of the first surface of the circuit board 10.

[0097] The first electrode 141 is an anode. When a voltage is applied between the first electrode 141 and the second electrode 143, holes are injected from the first electrode 141 into the OLED layer 142.

[0098] The first electrode 141 may be composed of, for example, a metal layer, or may be composed of a metal layer and a transparent conductive oxide layer. When the first electrode 141 is composed of a metal layer and a transparent conductive oxide layer, it is preferable that the transparent conductive oxide layer be provided on the OLED layer 142 side, from the viewpoint of having a layer having a high work function adjacent to the OLED layer 142.

[0099] The metal layer may function as a reflective layer that reflects light L emitted by the OLED layer 142. The metal layer may contain at least one metal element selected from the group consisting of chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). The metal layer may contain at least one metal element as a constituent element of an alloy. Specific examples of the alloy include an aluminum alloy and a silver alloy. Specific examples of the aluminum alloy include AlNd and AlCu.

[0100] An underlayer (not shown) may be provided adjacent to the second surface side of the metal layer. The underlayer may be capable of improving the crystal orientation of the metal layer during deposition. The underlayer may contain, for example, at least one metal element selected from the group consisting of titanium (Ti) and tantalum (Ta). The underlayer may contain the at least one metal element as a constituent element of an alloy.

[0101] The transparent conductive oxide layer contains a transparent conductive oxide, for example, at least one selected from the group consisting of transparent conductive oxides containing indium (hereinafter referred to as "indium-based transparent conductive oxides"), transparent conductive oxides containing tin (hereinafter referred to as "tin-based transparent conductive oxides"), and transparent conductive oxides containing zinc (hereinafter referred to as "zinc-based transparent conductive oxides").

[0102] Examples of indium-based transparent conductive oxides include indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), and fluorine-doped indium oxide (IFO). Among these transparent conductive oxides, indium tin oxide (ITO) is particularly preferred. Indium tin oxide (ITO) has a particularly low work function barrier for hole injection into the OLED layer 142, allowing the driving voltage of the display device 1 to be particularly low. Examples of tin-based transparent conductive oxides include tin oxide, antimony-doped tin oxide (ATO), and fluorine-doped tin oxide (FTO). Examples of zinc-based transparent conductive oxides include zinc oxide, aluminum-doped zinc oxide (AZO), boron-doped zinc oxide, and gallium-doped zinc oxide (GZO).

[0103] (OLED Layer 142) The OLED layer 142 can emit white light. The OLED layer 142 is an example of an organic-material-containing layer that includes an organic light-emitting layer. The OLED layer 142 is sandwiched between a plurality of first electrodes 141 and one second electrode 143. The OLED layer 142 is provided across the effective pixel region RE1 and the peripheral region RE2. The OLED layer 142 is a layer common to a plurality of light-emitting elements 14 included in the effective pixel region RE1.

[0104] The OLED layer 142 may be configured as a laminate including an organic light-emitting layer, in which case some layers of the laminate (e.g., an electron injection layer) may be inorganic. The OLED layer 142 may be an OLED layer having a single light-emitting unit U as shown in FIG. 6A , an OLED layer having two light-emitting units U1 and U2 (tandem structure) as shown in FIG. 6B , or an OLED layer having a structure other than these. The OLED layer 142 having a single light-emitting unit U has a configuration in which, for example, a hole injection layer 1421, a hole transport layer 1422, a red light-emitting layer 1420R, an emission separation layer 1423, a blue light-emitting layer 1420B, a green light-emitting layer 1420G, an electron transport layer 1424, and an electron injection layer 1425 are stacked in this order from the first electrode 141 to the second electrode 143. The OLED layer having two light-emitting units U1 and U2 has a configuration in which, for example, a hole injection layer 1421, a hole transport layer 1422, a blue light-emitting layer 1420B, an electron transport layer 1426, a charge generation layer 1427, a hole transport layer 1428, a yellow light-emitting layer 1420Y, an electron transport layer 1424, and an electron injection layer 1425 are laminated in this order from the first electrode 141 to the second electrode 143.

[0105] The hole injection layer 1421 can increase the efficiency of hole injection into the light-emitting layers 1420R, 1420G, and 1420B and suppress leakage. The hole transport layers 1422 and 1428 can increase the efficiency of hole transport into the light-emitting layers 1420R, 1420B, and 1420Y. The electron injection layer 1425 can increase the efficiency of electron injection into the light-emitting layers 1420G and 1420Y. The electron transport layers 1424 and 1426 can increase the efficiency of electron transport into the light-emitting layers 1420G, 1420B, and 1420Y. The emission separation layer 1423 is a layer for adjusting the injection of carriers into the light-emitting layers 1420R, 1420G, and 1420B. The balance of light emission of each color is adjusted by injecting electrons and holes into the light-emitting layers 1420R, 1420G, and 1420B via the emission separation layer 1423. The charge generation layer 1427 can supply electrons and holes to the blue light-emitting layer 1420B and the yellow light-emitting layer 1420Y, which are disposed so as to sandwich the charge generation layer 1427, respectively.

[0106] When an electric field is applied to the red light-emitting layer 1420R, the green light-emitting layer 1420G, the blue light-emitting layer 1420B, and the yellow light-emitting layer 1420Y, recombination occurs between holes injected from the first electrode 141 or the charge generation layer 1427 and electrons injected from the second electrode 143 or the charge generation layer 1427, and the red light, green light, blue light, and yellow light can be emitted.

[0107] (Second electrode 143) The second electrode 143 is provided on the first surface side of the OLED layer 142. The second electrode 143 is connected between adjacent light emitting elements 14 in the in-plane direction of the first surface of the circuit board 10, and is an electrode common to the plurality of light emitting elements 14.

[0108] The second electrode 143 is a cathode electrode. When a voltage is applied between the first electrode 141 and the second electrode 143, electrons are injected from the second electrode 143 into the OLED layer 142. The second electrode 143 is translucent to the white light emitted from the OLED layer 142. The second electrode 143 is preferably a transparent electrode that is transparent to visible light. In this specification, visible light refers to light in a wavelength range of 360 nm or more and 780 nm or less.

[0109] In order to improve luminous efficiency, it is preferable that the second electrode 143 be made of a material that is as transparent as possible and has a small work function. The second electrode 143 is made of, for example, at least one layer of a metal layer and a transparent conductive oxide layer. More specifically, the second electrode 143 is made of a single layer film of a metal layer or a transparent conductive oxide layer, or a laminate film of a metal layer and a transparent conductive oxide layer. When the second electrode 143 is made of a laminate film, the metal layer may be provided on the OLED layer 142 side, or the transparent conductive oxide layer may be provided on the OLED layer 142 side. However, from the viewpoint of having a layer with a low work function adjacent to the OLED layer 142, it is preferable that the metal layer be provided on the OLED layer 142 side.

[0110] The metal layer contains, for example, at least one metal element selected from the group consisting of magnesium (Mg), aluminum (Al), silver (Ag), calcium (Ca), and sodium (Na). The metal layer may contain the at least one metal element as a constituent element of an alloy. Specific examples of the alloy include an MgAg alloy, an MgAl alloy, and an AlLi alloy. The transparent conductive oxide layer contains a transparent conductive oxide. Examples of the transparent conductive oxide include the same materials as the transparent conductive oxide of the first electrode 141 described above.

[0111] (Insulating Layer 15) The insulating layer 15 is provided on the first surface of the circuit board 10 in a portion between the separated first electrodes 141. The insulating layer 15 is an insulating layer for element isolation and can insulate the first electrodes 141 adjacent in the in-plane direction of the first surface of the circuit board 10. The insulating layer 15 has a plurality of openings 15a. The plurality of openings 15a are provided corresponding to the respective light-emitting elements 14. The plurality of openings 15a may be provided on the first surface (the surface facing the OLED layer 142) of each first electrode 141. In other words, the peripheral portion of the first surface of each first electrode 141 may be covered by the insulating layer 15. The first electrode 141 and the OLED layer 142 come into contact with each other through the openings 15a. The shape of the openings 15a in a plan view is not particularly limited, and may be, for example, a substantially rectangular, circular, or elliptical shape.

[0112] The insulating layer 15 is, for example, an organic insulating layer, an inorganic insulating layer, or a laminate thereof. The organic insulating layer contains, for example, at least one selected from the group consisting of polyimide-based resins, acrylic-based resins, and novolac-based resins. The inorganic insulating layer is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙ ) and the like.

[0113] (Protective Layer 16) The protective layer 16 is provided on the first surface of the second electrode 143 and covers the plurality of light-emitting elements 14. The protective layer 16 is translucent to white light emitted from the light-emitting elements 14. The protective layer 16 can protect the plurality of light-emitting elements 14 and the like. For example, the protective layer 16 can prevent moisture from entering the plurality of light-emitting elements 14 and the like from the external environment. Furthermore, when the second electrode 143 is formed of a metal layer, the protective layer 16 may have a function of preventing oxidation of this metal layer.

[0114] The protective layer 16 contains, for example, at least one of an inorganic material and an organic material having low moisture absorption. The protective layer 16 may have a single-layer structure or a multi-layer structure. When the thickness of the protective layer 16 is increased, a multi-layer structure is preferable. This is because the internal stress in the protective layer 16 can be alleviated. The inorganic material is, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ), silicon oxynitride (SiO ｘ N ｙ ), titanium oxide (TiO ｘ ) and aluminum oxide (AlO ｘ The organic material includes at least one selected from the group consisting of thermosetting resin compositions, photosensitive resin compositions, and the like. The photosensitive resin composition includes, for example, an ultraviolet-curable resin composition. Specific examples of the organic material include at least one selected from the group consisting of acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, parylene resins, and the like.

[0115] The protective layer 16 preferably includes a deposition layer in which atomic layers are deposited. The deposition layer may be an ALD (Atomic Layer Deposition) layer. When the protective layer 16 includes a deposition layer, the effect of the protective layer 16 in suppressing moisture penetration can be improved. The protective layer 16 includes, for example, a metal oxide or a metal nitride. The metal oxide is, for example, aluminum oxide (AlO ｘ ) or titanium oxide (TiO ｘ Metal nitrides include, for example, titanium nitride (TiNｘ ) is included.

[0116] (Planarization Layer 17) The planarization layer 17 is provided on the first surface of the protective layer 16. The planarization layer 17 fills in the irregularities on the first surface of the protective layer 16, and can form a flat first surface on the upper side of the protective layer 16. The planarization layer 17 is translucent to the white light emitted from the light-emitting element 14. The planarization layer 17 includes, for example, at least one of an organic material and an inorganic material.

[0117] The organic material includes, for example, a cured product of a photosensitive resin composition. The photosensitive resin composition may include either a positive-type photosensitive resin composition or a negative-type photosensitive resin composition. Specific examples of the photosensitive resin composition include at least one selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, acrylic resin, phenolic resin, and siloxane resin. Examples of the inorganic material include the same materials as the inorganic material of the protective layer 16.

[0118] (Color Filter 18) The color filter 18 is a so-called on-chip color filter (OCCF). The color filter 18 is provided above the plurality of light-emitting elements 14. More specifically, the color filter 18 is provided on the first surface of the planarization layer 17. The color filter 18 includes, for example, a plurality of colored layers 181R, a plurality of colored layers 181G, and a plurality of colored layers 181B. In the following description, when the colored layers 181R, 181G, and 181B are referred to collectively without any particular distinction, the colored layers 181R, 181G, and 181B may be simply referred to as colored layers 181.

[0119] The multiple colored layers 181 are two-dimensionally arranged on the first surface of the planarization layer 17 in a specified arrangement pattern. The specified arrangement pattern is as described above for the multiple sub-pixels 2. Each colored layer 181 is provided above a light-emitting element 14. The sub-pixel 2R includes the light-emitting element 14 and a colored layer 181R provided above the light-emitting element 14. The sub-pixel 2G includes the light-emitting element 14 and a colored layer 181G provided above the light-emitting element 14. The sub-pixel 2B includes the light-emitting element 14 and a colored layer 181B provided above the light-emitting element 14.

[0120] The coloring layer 181R has a red color. The coloring layer 181R transmits the red light component of the white light emitted from the light-emitting element 14 but can absorb components other than the red light. The coloring layer 181G has a green color. The coloring layer 181G transmits the green light component of the white light emitted from the light-emitting element 14 but can absorb components other than the green light. The coloring layer 181B has a blue color. The coloring layer 181B transmits the blue light component of the white light emitted from the light-emitting element 14 but can absorb components other than the blue light.

[0121] The colored layer 181R includes, for example, a red color resist, the colored layer 181G includes, for example, a green color resist, and the colored layer 181B includes, for example, a blue color resist.

[0122] (Planarization Layer 19) The planarization layer 19 is provided on the first surface of the color filter 18. The planarization layer 19 fills in the irregularities on the first surface of the color filter 18, and a flat first surface can be formed above the color filter 18. The planarization layer 19 is translucent to the red light, green light, and blue light emitted from the color filter 18. Examples of materials for the planarization layer 19 include the same materials as those for the planarization layer 17.

[0123] (Lens Array 20) The lens array 20 is provided on the first surface of the planarization layer 19. The lens array 20 includes a plurality of lenses 201. The lenses 201 can collect light emitted upward from the light-emitting elements 14 and incident through the colored layer 181 in a forward direction. The lenses 201 are convex lenses having a convex collecting surface on the side opposite to the light-emitting elements 14. The plurality of lenses 201 are so-called on-chip microlenses (OCLs), and are two-dimensionally arranged on the first surface of the planarization layer 19 in a specified arrangement pattern. The specified arrangement pattern is as described above as the specified arrangement pattern of the plurality of sub-pixels 2. The center of the lens 201 substantially coincides with the center of the light-emitting region of the light-emitting element 14 in a planar view.

[0124] The light-collecting surface of the lens 201 preferably has a convex curved surface shape. Examples of convex curved surfaces include, but are not limited to, a substantially parabolic or substantially hemispherical shape. Here, the substantially parabolic or substantially hemispherical shape is not limited to a parabolic or hemispherical shape in the strict sense, but also includes shapes that are visually recognized as being close to a parabolic or hemispherical shape. For example, it includes a parabolic or hemispherical shape that is distorted or deformed within the range of tolerance, error, etc.

[0125] The refractive index n of the lens 201 １ is the refractive index n of the sealing resin layer 21 ２ The refractive index n of the lens 201 is higher than １ is the refractive index n of the sealing resin layer 21 ２ , the light can be refracted and focused at the interface between the lens 201 and the sealing resin layer 21. Therefore, the light extraction function can be improved.

[0126] The lens 201 includes, for example, an organic material or an inorganic material that is transparent to visible light. The organic material includes, for example, a cured product of a photosensitive resin composition such as an ultraviolet curable resin composition. The inorganic material includes, for example, silicon nitride (SiN ｘ ) and silicon oxynitride (SiO ｘ N ｙThe lens 201 may contain a filler. By adjusting the content of the filler contained in the lens 201, the refractive index n １ The filler may be a hollow filler. The filler may be an inorganic filler. The inorganic filler may be, for example, aluminum oxide (AlO ｘ ), titanium oxide (TiO ｘ ) and zirconium oxide (ZrO ｘ ) and the like.

[0127] (Encapsulating resin layer 21) The encapsulating resin layer 21 covers the lens array 20. The encapsulating resin layer 21 can protect each component, such as the plurality of light-emitting elements 14, from moisture, impact, and the like. The encapsulating resin layer 21 includes a cured product of an encapsulating resin composition. The encapsulating resin composition includes, for example, at least one selected from the group consisting of a thermosetting resin composition and a photosensitive resin composition. The photosensitive resin composition includes, for example, an ultraviolet-curable resin composition. The encapsulating resin layer 21 may be configured as a hard coat layer. In this case, the scratch resistance, weather resistance, and other properties of the display device 1 can be improved.

[0128] [Manufacturing Method of Display Device 1] Hereinafter, an example of a manufacturing method of the display device 1 according to one embodiment will be described with reference to FIGS. 7A to 8C.

[0129] (Process of forming circuit board 10) First, a plurality of drive transistors Tr1 and a plurality of light-emission control transistors Tr2 are formed on the first surface side of the semiconductor substrate 111. Next, an interlayer insulating layer 112 is formed on the first surface of the semiconductor substrate 111 so as to cover the plurality of drive transistors Tr1 and the plurality of light-emission control transistors Tr2. This forms the transistor layer 11. Next, a wiring layer 12 is formed on the first surface of the transistor layer 11.

[0130] Next, as shown in FIG. 7A, an interlayer insulating layer 130a is formed by, for example, a CVD (Chemical Vapor Deposition) method and a sputtering method. １7B , an oxide semiconductor layer 133, a gate insulating layer 134, and a metal layer 131M are formed in this order on the first surface of the wiring layer 12. Next, the metal layer 131M is patterned into a square ring shape in a plan view, for example, by photolithography. As a result, multiple gate electrodes 131G are formed on the first surface of the gate insulating layer 134.

[0131] Next, as shown in FIG. 7C, a first insulating layer 135a is formed by, for example, a CVD method so as to cover the plurality of gate electrodes 131G. １ and the second insulating layer 135a ２ are sequentially formed on the first surface of the gate insulating layer 134. Next, the second insulating layer 135a is formed by, for example, CMP (Chemical Mechanical Polishing). ２ The first surface of the second insulating layer 135a is polished and planarized. Next, a photoresist layer (not shown) is applied to the second insulating layer 135a. ２ 7D, the photoresist layer is formed on the first surface of the insulating layer 135a, and the photoresist layer is exposed and developed to form a photoresist layer having a predetermined pattern. Next, the photoresist layer is used as a mask to form the second insulating layer 135a. ２ , first insulating layer 135a １ The gate insulating layer 134 and the oxide semiconductor layer 133 are sequentially dry-etched. As a result, each of these layers is patterned to have a square ring shape in a plan view, and the plurality of stacked bodies 130 are formed into the interlayer insulating layer 130a. １ is formed on the first surface of the substrate.

[0132] During the dry etching, the patterned second insulating layer 135a ２ is the first insulating layer 135a １ , and is used as a hard mask when etching the gate insulating layer 134 and the oxide semiconductor layer 133. Furthermore, during the dry etching, the constituent material of the oxide semiconductor layer 133 that is repelled by ions is deposited on the inner peripheral side surface 130S of the stacked body 130. １ and outer peripheral side surface 130S ２ As a result, as shown in FIG. 8A, the conductive portions 132D and 132S are deposited on the inner peripheral side surface 130S of the laminate 130. １and outer peripheral side surface 130S ２ is formed.

[0133] Next, an insulating layer is formed on the first surface of the interlayer insulating layer 130a1 by, for example, CVD so as to cover the stacked body 130 and fill the central hole of the stacked body 130 and the recess between adjacent stacked bodies 130. Next, the first surface of the insulating layer is polished and planarized by, for example, CMP. As a result, as shown in FIG. 8B, the central insulating layer 130a ３ is formed in the hole at the center of the laminate 130, and the element isolation insulating layer 130a ４ are formed in the recesses between adjacent laminates 130.

[0134] Next, an element isolation insulating layer 130a is formed by, for example, photolithography. ４ From the first surface to the wiring 12c １ a plurality of holes reaching the first surface of the insulating layer 130a for element isolation; ４ From the first surface to the wiring 12c ２ The plurality of holes reaching the first surface of the element isolation insulating layer 130a are formed in the element isolation insulating layer 130a. ４ and the interlayer insulating layer 130a １ Next, vias 13a are formed in the plurality of holes. １ , 13a ２ Form.

[0135] Next, the first surface of the laminate 130, the central insulating layer 130a ３ and the first surface of the element isolation insulating layer 130a. ４ After forming a metal layer over the first surface of the insulating layer 130a, the metal layer is patterned by, for example, photolithography. As a result, as shown in FIG. 8C, a plurality of source electrodes 131S are formed on the insulating layer 130a for element isolation. ４ and a plurality of drain electrodes 131D are formed on the boundary between the first surface of the central insulating layer 130a and the first surface of the interlayer insulating layer 135. ３ and the first surface of the interlayer insulating layer 135 .

[0136] Next, an interlayer insulating layer 130a is formed by, for example, a CVD method so as to cover the plurality of source electrodes 131S and the plurality of drain electrodes 131D. ２Next, an interlayer insulating layer 130a is formed by, for example, photolithography. ２ The interlayer insulating layer 130a has a plurality of holes extending from the first surface of the insulating layer 130a to the first surface of the source electrode 131S of the switching transistor Tr4. ２ Next, vias 13b are formed in the plurality of holes. １ By the above steps, the circuit board 10 is obtained.

[0137] (Process for forming each layer on the circuit board 10) A plurality of first electrodes 141, an insulating layer 15, an OLED layer 142, a second electrode 143, a protective layer 16, a planarizing layer 17, a color filter 18, a planarizing layer 19, a lens array 20, and a sealing resin layer 21 are formed in this order on the first surface of the circuit board 10. In this way, the display device 1 according to one embodiment is obtained.

[0138] [Operation and Effect] To facilitate understanding of the operation and effect of the display device 1 according to the embodiment, the display device 1 according to the embodiment will be described in comparison with a display device according to a comparative example.

[0139] 9A is a cross-sectional view of a transistor layer 230 of a display device according to a comparative example. FIG. 9B is a plan view of the transistor layer 230 of the display device according to the comparative example. The transistor layer 230 includes a plurality of transistors Tr, a protective layer 235, and an interlayer insulating layer 230a. １ , 230a ２ , 230a ３ The transistor Tr includes an oxide semiconductor layer 233, a gate insulating layer 234, a gate electrode 231G, a source electrode 231S, and a drain electrode 231D. ２ has a plurality of contact holes 231SH, 231DS. The source electrode 231S is connected to a source region 233S of the oxide semiconductor layer 233 via the contact hole 231SH. The drain electrode 231D is connected to a drain region 233D of the oxide semiconductor layer 233 via a contact hole 231DH.

[0140] In the process of forming the transistor layer 230, when the oxide semiconductor layer 233 is processed to have a rectangular shape in a plan view, a damaged layer may be formed on the side surface (processed edge) of the oxide semiconductor layer 233, and donors resulting from etching gas, oxygen, and hydrogen may be generated. If such donors are generated on the side surface (processed edge) of the long side, there is a risk that a leakage current may occur between the source region 233S and the drain region 233D via the side surface of the long side. In other words, a parasitic channel may be formed on the side surface of the long side, and the channel may not be turned off.

[0141] Furthermore, depending on the formation positions of the contact holes 231SH and 231DH, the effects of hydrogen diffusion and donor generation due to oxygen extraction during the formation of the contact holes 231SH and 231DH may extend to the active region. Attempting to suppress such effects imposes restrictions on the opening area of ​​the contact holes 231SH and 231DH, the number of contact holes 231SH and 231DH, and the distance from the contact holes 231SH and 231DH to the active region of the oxide semiconductor layer 233. This may make it difficult to reduce the size of the source region 233S and the drain region 233D. Therefore, it may be difficult to reduce the size of the transistor (semiconductor element) Tr.

[0142] In the transistor layer 13 of the display device 1 according to the embodiment, the oxide semiconductor layer 133 has a ring shape in a plan view, so that the outer peripheral side surface (the processed end on the outer peripheral side) to which the conductive portion 132S of the source electrode 131S is connected and the inner peripheral side surface (the processed end on the inner peripheral side) to which the conductive portion 132D of the drain electrode 131D is connected are independent and not connected. Therefore, unlike the transistor layer 230 of the display device according to the comparative example, no leakage current occurs through the side surface on the long side. In other words, the formation of a parasitic channel in the oxide semiconductor layer 133 can be suppressed.

[0143] The conductive portion 132S is connected to the outer peripheral side surface of the oxide semiconductor layer 133, and the conductive portion 132D is connected to the inner peripheral side surface of the oxide semiconductor layer 133. This reduces the footprints of the conductive portions 132S and 132D, and makes it possible to miniaturize the write transistor Tr3 and the switching transistor Tr4.

[0144] As described above, the conductive portion 132S is connected to the outer peripheral side surface of the oxide semiconductor layer 133, and the conductive portion 132D is connected to the inner peripheral side surface of the oxide semiconductor layer 133. This maintains the distance between the connection point of the conductive portion 132S (the outer peripheral side surface of the oxide semiconductor layer 133) and the active region of the oxide semiconductor layer 133, and the distance between the connection point of the conductive portion 132D (the inner peripheral side surface of the oxide semiconductor layer 133) and the active region of the oxide semiconductor layer 133. This prevents the effects of hydrogen diffusion and donor generation due to oxygen extraction during the formation of the stacked body 130 from reaching the active region of the oxide semiconductor layer 133. This stabilizes the characteristics of the write transistor Tr3 and the switching transistor Tr4. Furthermore, the above-described connection configuration of the conductive portion 132S and the conductive portion 132D also enables the channel width to be increased.

[0145] Since the source electrode 131S has a ring shape in a plan view, it is possible to extend wiring from the source electrode 131S in various directions. This improves the degree of freedom in the layout of wiring for the source electrode 131S. This allows, for example, wiring to the source electrode 131S via the shortest route.

[0146] In the manufacturing method of the display device 1 according to the embodiment, the conductive portions 132S and 132D can be formed by utilizing deposits (by-products) generated during etching of the oxide semiconductor layer 133. Therefore, the manufacturing process of the display device 1 can be simplified.

[0147] In the manufacturing method of the display device 1 according to the embodiment, the second insulating layer 135a ２ as a hard mask, the oxide semiconductor layer 133 can be dry-etched. Therefore, processing damage due to dry etching can be limited to the inner and outer peripheral side surfaces of the oxide semiconductor layer 133. Therefore, the influence of processing damage due to dry etching on the channel region can be suppressed.

[0148] <3. Modifications> [Modification 1] In the above embodiment, an example has been described in which the write transistor Tr3 has the conductive portion 132S and the conductive portion 132D that include deposits deposited by dry etching the oxide semiconductor layer 133 (see FIG. 5A ). However, the configuration of the write transistor Tr3 is not limited to this example.

[0149] For example, as shown in FIG. 10 , the write transistor Tr3 may have a conductive portion 136D containing a metal instead of the conductive portion 132D. The conductive portion 136D has a square shape in a plan view. More specifically, the conductive portion 136D has a solid regular square prism shape. The conductive portion 136D may be made of the same metal as the drain electrode 131D and may be integrated with the drain electrode 131D. An example of the metal contained in the conductive portion 136D is the same metal as the gate electrode 131G. The gate electrode 131G and the conductive portion 132S are concentric with the gate electrode 136D in a plan view.

[0150] 10 , when the write transistor Tr3 has the conductive portion 136D instead of the conductive portion 132D, the oxide semiconductor layer 133 may not have a hole in the center, and the center of the first surface of the oxide semiconductor layer 133 may be exposed from the hole (opening) of the gate electrode 131G. The bottom surface of the conductive portion 136D may be connected to the first surface of the oxide semiconductor layer 133.

[0151] Similar to the write transistor Tr3, the switching transistor Tr4 may have a conductive portion 136D containing metal instead of the conductive portion 132D containing the deposit.

[0152] The write transistor Tr3 may have a conductive portion (not shown) containing a metal instead of the conductive portion 132S containing the deposit. The conductive portion may be made of the same metal as the source electrode 131S and may be integrated with the source electrode 131S. Furthermore, the switching transistor Tr4 may have a conductive portion containing a metal instead of the conductive portion 132D containing the deposit.

[0153] As shown in FIG. 11, the conductive portion 132S is a first portion 132S １ and the second portion 132S ２ The conductive portion 132D may have the first portion 132D. １ and the second portion 132D ２ The first portion 132S may have the following. １ and the second portion 132S ２ is the interlayer insulating layer 130a １ From the first portion 132S toward the source electrode 131S １ and the second portion 132S ２ The first portion 132D is laminated in this order. １ and second portion 132D ２ The first portion 132D extends from the interlayer insulating layer 130a1 toward the drain electrode 131D. １ and second portion 132D ２ The layers are stacked in this order.

[0154] First part 132S １ , 132D １ The first portion 132S and the oxide semiconductor layer 133 preferably contain the same type of metal. １ , 132D １ The transparent conductive material includes, for example, a deposit that is deposited by dry etching the oxide semiconductor layer 133. The transparent conductive material is, for example, a transparent conductive oxide.

[0155] Second part 132S ２ , 132D ２ The second portion 132S includes, for example, a metal. ２ The second portion 132D may be made of the same metal as the source electrode 131S and may be integrated with the source electrode 131S. ２ The second portion 132S may be made of the same metal as the drain electrode 131D and may be integrated with the drain electrode 131D. ２ , 132D ２ The metal contained in the second portion 132S may be, for example, the same metal as that contained in the gate electrode 131G. ２ and the metal contained in the second portion 132D ２The types of metals contained in may be the same or different.

[0156] As shown in FIG. 12, the first portion 132S １ and the second portion 132S ２ is the outer peripheral side surface 130S of the laminate 130 ２ The second portion 132S is stacked on top of the first portion 132S. ２ is the first portion 132S １ The first portion 132D may cover the １ and second portion 132D ２ is the inner peripheral side surface 130S of the laminate 130 １ The second portion 132D is stacked on top of the first portion 132D. ２ is the first portion 132D １ may be covered.

[0157] [Variation 2] In the above embodiment, an example has been described in which the write transistor Tr3 has a gate insulating layer 134 and a gate electrode 131G, in that order, on the first surface of the oxide semiconductor layer 133 (see FIG. 5A ). However, the configuration of the write transistor Tr3 is not limited to this example. As shown in FIG. 13 , the write transistor Tr3 may have a gate insulating layer 134 and a gate electrode 131G, in that order, on the second surface of the oxide semiconductor layer 133. The gate insulating layer 134 may not have a hole in the center of the stack 130, but may close the hole in the center of the stack 130. In this case, the lower end of the conductive portion 132D may be located on the first surface of the gate insulating layer 134. Furthermore, the gate insulating layer 134 may be connected between adjacent stacks 130. The switching transistor Tr4 may also have a layer configuration similar to that of the write transistor Tr3.

[0158] [Modification 3] In the above embodiment, the drain electrode 131D is formed on the central insulating layer 130a ３In the above example, the gate electrode 131G is provided on the boundary between the first surface of the oxide semiconductor layer 133 and the first surface of the interlayer insulating layer 135, and is connected to the upper end of the conductive portion 132D (see FIG. 5A ). However, the configuration of the writing transistor Tr3 is not limited to this example. As shown in FIG. 14 , the stacked body 130 may not have a hole in the center, and the drain electrode 131D may be formed directly in the center of the second surface (the surface opposite to the light-emitting element 14 side) of the oxide semiconductor layer 133. In this case, the gate electrode 131G may be provided between the outer peripheral side surface of the oxide semiconductor layer 133 and the drain electrode 131D in a plan view. The switching transistor Tr4 may also have a configuration similar to that of the writing transistor Tr3.

[0159] [Modification 4] In the above embodiment, an example has been described in which the write transistor Tr3 has the gate insulating layer 134 and the gate electrode 131G in this order on the first surface of the oxide semiconductor layer 133. However, the configuration of the write transistor Tr3 is not limited to this example. As shown in FIG. 15 , １ and gate electrode 131G １ on the first surface of the oxide semiconductor layer 133, and a gate insulating layer 134I ２ and gate electrode 131G ２ and may be disposed in this order on the second surface of the oxide semiconductor layer 133. That is, the oxide semiconductor layer 133 may include the gate electrode 131G １ and gate electrode 131G ２ The gate electrode 131G may be provided between the ２ is the gate electrode 131G １ Similarly to the gate electrode 131G, the gate electrode 131G is provided between the outer peripheral side surface and the central portion of the oxide semiconductor layer 133 in plan view. １ and gate electrode 131G ２ are examples of the first gate and the second gate, respectively. ２ The conductive portion 132D may not have a hole in the center of the stacked body 130, and may close the hole in the center of the stacked body 130. In this case, the lower end of the conductive portion 132D is connected to the gate insulating layer 134I. ２ The gate insulating layer 134I may be located on the first surface of the gate insulating layer 134I.２ may be connected between adjacent stacked bodies 130. The switching transistor Tr4 may also have a layer structure similar to that of the above-described write transistor Tr3.

[0160] [Variation 5] In the above embodiment, an example has been described in which the inner peripheral side surface and the outer peripheral side surface of one laminate 130 are connected to the conductive portion 132S and the conductive portion 132D, respectively. However, the number of laminates 130 connected to the conductive portion 132S and the conductive portion 132D is not limited to one, and may be multiple. Specifically, for example, as shown in FIG. 16 , the inner peripheral side surface and the outer peripheral side surface of two laminates 130A and 130B may be connected to the conductive portion 132S and the conductive portion 132D, respectively. The laminates 130A and 130B are stacked in this order on the first surface of the interlayer insulating layer 130a1. The laminate 130B has the same configuration as the laminate 130 in the above embodiment. The laminate 130A has an interlayer insulating layer 135 connected to the first insulating layer 135a. １ The conductive portion 132S is connected to the outer peripheral side surface of the oxide semiconductor layer 133 of each of the stacks 130A and 130B, and the conductive portion 132D is connected to the inner peripheral side surface of the oxide semiconductor layer 133 of each of the stacks 130A and 130B.

[0161] Fig. 17A is a wiring diagram of a circuit configured with the stacked structure shown in Fig. 16. Fig. 17B is a diagram that makes the wiring diagram of Fig. 17A easier to read. As shown in Figs. 17A and 17B, the stacked structure shown in Fig. 16 includes transistors Tr31 and Tr32. Note that in the above embodiment, the write transistor Tr3 may be replaced by the transistors Tr31 and Tr32, and in the above embodiment, the switching transistor Tr4 may be replaced by the transistors Tr31 and Tr32.

[0162] [Variation 6] In the above embodiment, the stacked body 130 has a square ring shape in a planar view. However, the shape of the stacked body 130 is not limited to this example. For example, as shown in FIG. 18 , the stacked body 130 may have a circular ring shape in a planar view. That is, the oxide semiconductor layer 133, the gate insulating layer 134, the gate electrode 131G, the source electrode 131S, the drain electrode 131D, the conductive portion 132S, and the conductive portion 132D may have a circular ring shape in a planar view. Furthermore, the stacked body 130 may have a polygonal ring shape other than a square ring, or an elliptical ring shape in a planar view. That is, the oxide semiconductor layer 133, the gate insulating layer 134, the gate electrode 131G, the source electrode 131S, the drain electrode 131D, the conductive portion 132S, and the conductive portion 132D may have a polygonal ring shape other than a square ring, or an elliptical ring shape in a planar view.

[0163] Here, the polygonal ring other than a square ring may be a regular polygonal ring other than a square ring, or a polygonal ring other than a regular polygonal ring. Examples of regular polygonal rings other than a square ring include, but are not limited to, equilateral triangular rings, regular hexagonal rings, and regular octagonal rings. Examples of polygonal rings other than a regular polygonal ring include, but are not limited to, triangular rings other than equilateral triangular rings, quadrangular rings other than square rings, hexagonal rings other than regular hexagonal rings, and octagonal rings other than regular octagonal rings.

[0164] In the present disclosure, a regular polygonal ring (e.g., a square ring, a regular triangular ring, a regular hexagonal ring, or a regular octagonal ring) is not limited to a regular polygonal ring in the strict sense, but also includes shapes that are visually similar to a regular polygonal ring. For example, a regular polygonal ring includes shapes that are distorted or deformed from a regular polygonal ring within tolerances, errors, etc., and shapes with rounded corners of a regular polygonal ring. A polygonal ring (e.g., a triangular ring, a quadrilateral ring, a hexagonal ring, or an octagonal ring) is not limited to a polygonal ring in the strict sense, but also includes shapes that are visually similar to a polygonal ring. For example, a polygonal ring includes shapes that are distorted or deformed from a polygonal ring within tolerances, errors, etc., and shapes with rounded corners of a polygonal ring.

[0165] [Variation 7] In Variation 1, an example has been described in which the laminate 130 has a square ring shape in plan view, and the conductive portion 136D has a square shape in plan view. However, the shapes of the laminate 130 and the conductive portion 136D are not limited to this example. The laminate 130 may have a circular ring shape in plan view, and the conductive portion 136D may have a circular shape in plan view. The laminate 130 may have a polygonal ring shape other than a square ring or an elliptical ring shape in plan view, and the conductive portion 136D may have a polygonal shape other than a square ring or an elliptical shape in plan view.

[0166] Here, the polygonal shape other than a square may be a regular polygonal shape other than a square, or may be a polygonal shape other than a regular polygonal shape. Examples of regular polygonal shapes other than a square include, but are not limited to, an equilateral triangle, a regular hexagon, or a regular octagon. Examples of polygonal shapes other than a regular polygon include, but are not limited to, a triangular shape other than an equilateral triangle, a quadrangular shape other than a square, a hexagonal shape other than a regular hexagon, or an octagonal shape other than a regular octagon.

[0167] In the present disclosure, a regular polygonal shape (e.g., a square, a regular triangle, a regular hexagon, or a regular octagon) is not limited to a regular polygonal shape in the strict sense, but also includes shapes that are visually perceived as being close to a regular polygonal shape. For example, a regular polygonal shape includes shapes that are distorted or deformed from a regular polygonal shape within the range of tolerances, errors, etc., and shapes with rounded corners of a regular polygonal shape. A polygonal shape (e.g., a triangle, a square, a hexagon, or an octagon) is not limited to a polygonal shape in the strict sense, but also includes shapes that are visually perceived as being close to a polygonal shape. For example, a polygonal shape includes shapes that are distorted or deformed from a polygonal shape within the range of tolerances, errors, etc., and shapes with rounded corners of a polygonal shape.

[0168] [Variation 8] In the above embodiment, an example has been described in which the source electrode 131S is provided on the outer peripheral side surface of the stacked body 130 in a plan view, and the drain electrode 131D is provided above the through-hole in the center of the stacked body 130 in a plan view. However, the arrangement of the source electrode 131S and the drain electrode 131D is not limited to this example. For example, the drain electrode 131D may be provided on the outer peripheral side surface of the stacked body 130 in a plan view, and the source electrode 131S may be provided above the through-hole in the center of the stacked body 130 in a plan view.

[0169] [Modification 9] From the viewpoint of improving light extraction efficiency and / or improving color purity, the light emitting element 14 may have a resonator structure.

[0170] When the first electrode 141 is a reflective electrode that functions as a reflective layer, a resonator structure may be formed by the first electrode 141 and the second electrode 143. In this case, the optical distance between the first electrode 141 and the second electrode 143 may be set by the thickness of the OLED layer 142, by selecting the material of the first electrode 141, or by a combination of these.

[0171] When the first electrode 141 is a transparent electrode, a reflective layer may be provided below the transparent electrode, and a resonator structure may be formed by the reflective layer and the second electrode 143. In this case, the optical distance between the reflective layer and the second electrode 143 may be set by the thickness of the OLED layer 142, by selecting the material of the reflective layer, by the thickness of an insulating layer provided between the first electrode 141 (transparent electrode) and the reflective layer, or by a combination of two or more of these.

[0172] [Modification 10] In the above embodiment, an example was described in which the display device 1 includes a plurality of light-emitting elements 14 capable of emitting white light and a color filter 18, and a combination of these elements is used to display a color image. However, the colorization method of the display device 1 is not limited to this. For example, instead of the plurality of light-emitting elements 14 capable of emitting white light, the display device 1 may include a plurality of light-emitting elements capable of emitting red light, a plurality of light-emitting elements capable of emitting green light, and a plurality of light-emitting elements capable of emitting blue light. In this case, the color filter is not an essential component and may or may not be included.

[0173] The light-emitting element capable of emitting light of a predetermined color (red light, green light, or blue light) is, for example, (1) a light-emitting element including a light-emitting layer capable of emitting light of a predetermined color (red light, green light, or blue light); (2) a light-emitting element including a light-emitting layer capable of emitting white light and capable of resonating and emphasizing light of a predetermined wavelength (red light, green light, or blue light) contained in the white light emitted by the light-emitting layer using a resonator structure; or (3) a light-emitting element including a light-emitting layer capable of emitting light of a predetermined color (red light, green light, or blue light) and capable of resonating and emphasizing light of a predetermined wavelength contained in the light of a predetermined color emitted by the light-emitting layer using a resonator structure.

[0174] [Modification 11] In the above embodiment, an example in which the color filter 18 is provided has been described, but a quantum dot layer may be provided instead of the color filter 18, or a quantum dot layer may be provided together with the color filter 18. The quantum dot layer is a color conversion layer that contains quantum dots (semiconductor particles) and can convert the color of light emitted from the plurality of light-emitting elements 14. In this case, the plurality of light-emitting elements 14 may be configured to emit blue light.

[0175] [Modification 12] In the above embodiment, an example has been described in which the light-emitting elements 14 are OLED elements. However, the light-emitting elements 14 are not limited to this example and may be, for example, self-luminous light-emitting elements such as LED (Light Emitting Diode) elements, inorganic electroluminescence (IEL) elements, quantum dot light-emitting diode (QLED) elements, or semiconductor laser elements. Two or more types of light-emitting elements may be provided in the display device 1.

[0176] [Variation 13] In the above embodiment, an example was described in which the first electrode 141 is an anode electrode and the second electrode 143 is a cathode electrode. However, the first electrode 141 and the second electrode 143 are not limited to this example, and the first electrode 141 may be a cathode electrode and the second electrode 143 may be an anode electrode.

[0177] [Other Modifications] Although one embodiment of the present disclosure and its modifications (hereinafter referred to as "one embodiment, etc.") have been specifically described above, the present disclosure is not limited to one embodiment, etc., and various modifications based on the technical concept of the present disclosure are possible.

[0178] For example, the configurations, methods, steps, shapes, materials, and numerical values ​​given in one embodiment are merely examples, and different configurations, methods, steps, shapes, materials, and numerical values ​​may be used as necessary.

[0179] The configurations, methods, steps, shapes, materials, numerical values, etc. of the embodiments may be combined with one another without departing from the spirit of the present disclosure.

[0180] Unless otherwise specified, the materials exemplified in the embodiments and the like can be used singly or in combination of two or more.

[0181] The present disclosure may also employ the following configurations. (1) A semiconductor element comprising: an oxide semiconductor layer having an outer peripheral side surface; a first conductive portion connected to the outer peripheral side surface and extending from the outer peripheral side surface in a first thickness direction of the oxide semiconductor layer; and a first electrode connected to the first conductive portion. (2) The semiconductor element according to (1), comprising: a second conductive portion connected to a central portion of the oxide semiconductor layer and extending from the central portion in the first thickness direction or a second thickness direction opposite to the first thickness direction; a second electrode connected to the second conductive portion; and a first gate electrode provided between the outer peripheral side surface and the central portion in a plan view. (3) The semiconductor element according to (2), in which the first gate electrode and the oxide semiconductor layer have an annular shape in a plan view, and the central portion is an inner peripheral side surface of the oxide semiconductor layer. (4) The semiconductor element according to (2), in which the first gate electrode, the first conductive portion, and the second conductive portion are concentric in a plan view. (5) The semiconductor element according to any one of (2) to (4), wherein the first conductive portion and the second conductive portion have a cylindrical shape. (6) The semiconductor element according to (2), wherein the first gate electrode has an annular shape in a plan view, and the central portion is a central portion of the first surface of the oxide semiconductor layer exposed through an opening in the first gate electrode. (7) The semiconductor element according to (2), wherein the first gate electrode and the first conductive portion have concentric shapes centered on the second conductive portion in a plan view. (8) The semiconductor element according to any one of (2), (6), and (7), wherein the first conductive portion has a cylindrical shape, and the second conductive portion has a columnar shape. (9) The semiconductor element according to (1), comprising: a second electrode provided in a central portion of the oxide semiconductor layer; and a first gate electrode provided between the outer peripheral side surface and the second electrode in a plan view. (10) The semiconductor element according to any one of (1) to (9), wherein the oxide semiconductor layer contains at least one metal selected from the group consisting of indium, gallium, and zinc. (11) The semiconductor element according to any one of (1) to (10), wherein the first conductive portion and the oxide semiconductor layer contain the same metal.(12) The semiconductor element according to any one of (1) to (10), wherein the first conductive portion has a first portion containing a transparent conductive material and a second portion containing a metal, and the oxide semiconductor layer and the first portion contain the same type of metal. (13) The semiconductor element according to any one of (2) to (9), further comprising: a first insulating layer provided on the first gate electrode so as to cover a side surface of the first gate electrode; and a second insulating layer provided on the first insulating layer, wherein an etching rate of the second insulating layer is lower than an etching rate of the first insulating layer. (14) The semiconductor element according to any one of (2) to (9) and (13), further comprising: a second gate electrode provided between the outer peripheral side surface and the central portion in a plan view, and the oxide semiconductor layer provided between the first gate electrode and the second gate electrode. (15) A semiconductor element comprising: a first oxide semiconductor layer having a first outer peripheral side surface; a second oxide semiconductor layer having a second outer peripheral side surface; a first conductive portion connected to the first outer peripheral side surface and the second outer peripheral side surface and extending from the first outer peripheral side surface in one thickness direction of the first oxide semiconductor layer; and a first electrode connected to the first conductive portion. (16) The semiconductor element according to (15), comprising: a second conductive portion connected to a first central portion of the first oxide semiconductor layer and a second central portion of the second oxide semiconductor layer and extending from the first central portion in the one first thickness direction; a second electrode connected to the second conductive portion; a first gate electrode provided between the first outer peripheral side surface and the first central portion in a plan view; and a second gate electrode provided between the second outer peripheral side surface and the second central portion in a plan view. (17) A display device comprising: a circuit board including the semiconductor element according to any one of (1) to (16); and a light-emitting element. (18) The display device according to (17), wherein the semiconductor element is a first semiconductor element, the circuit board further includes a second semiconductor element, and the first semiconductor element is provided above the second semiconductor element. (19) The display device according to (17) or (18), wherein the light-emitting element is an organic light-emitting diode element, a light-emitting diode element, or a liquid crystal display element.(20) An electronic device comprising the semiconductor element according to any one of (1) to (16).

[0182] <4 Examples of Leakage Suppression Structure> The OLED layer 142 of the display device 1 according to one embodiment and the display device 1 according to one of its modified examples (hereinafter referred to as the "display device 1 according to one embodiment, etc.") is connected between adjacent light-emitting elements 14 in the in-plane direction of the first surface of the circuit board 10, and is a layer common to the plurality of light-emitting elements 14. For this reason, in the display device 1 according to one embodiment, etc., there is a risk of current leakage occurring between adjacent light-emitting elements 14. Below, examples of leakage suppression structures for suppressing such current leakage between light-emitting elements 14 will be described. Note that in the following first to seventh examples, examples will be described in which the OLED layer 142 has two light-emitting units U1 and U2.

[0183] (Leakage Suppression Structure: First Example) Fig. 19 is a cross-sectional view of a first example of the leakage suppression structure. Note that in Fig. 19, layers above the second electrode 143 are not shown. Similarly, in the cross-sectional views for explaining the leakage suppression structures of the second to ninth examples, layers above the second electrode 143 are not shown.

[0184] The insulating layer 15 has an opening 15a above each first electrode 141, and covers the periphery of the first surface of the first electrode 141 and the side surface (end surface) of the first electrode 141. Specifically, the insulating layer 15 has a side wall portion 15b and an extension portion 15c. The side wall portion 15b stands perpendicular to the first surface of the circuit board 10 and covers the side surface of the first electrode 141. The extension portion 15c extends from the upper end of the inner circumferential surface of the side wall portion 15b toward the center of the first surface of the first electrode 141 and covers the periphery of the first surface of the first electrode 141.

[0185] The inner periphery of opening 15a in insulating layer 15 has eave-shaped protruding portion 152b that protrudes toward the center of opening 15a. Protruding portion 152b is spaced apart from the first surface of first electrode 141. Protruding portion 152b is preferably provided along the entire periphery of opening 15a, but may be provided along a portion of the entire periphery of opening 15a.

[0186] The light-emitting unit U1 and the charge generation layer 1427 included in the OLED layer 142 are disconnected or made highly resistant by the overhanging portion 152b (region A shown in FIG. 19 ). This makes it possible to suppress current leakage between adjacent light-emitting elements 14. Here, "high resistance" refers to the light-emitting unit U1 and the charge generation layer 1427 becoming extremely thin at the overhanging portion 152b, resulting in high resistance. The disconnection or high resistance of the light-emitting unit U1 and the charge generation layer 1427 caused by the overhanging portion 152b can occur due to the shadowing effect of the overhanging portion 152b during film formation of the OLED layer 142. A gap 152c may be formed between the overhanging portion 152b and the first electrode 141.

[0187] The insulating layer 15 has a first insulating layer 151 and a second insulating layer 152, which are arranged in this order on the first surface of the circuit board 10 and the first surface of the first electrode 141. The first insulating layer 151 has a plurality of first openings 151a. The second insulating layer 152 has a plurality of second openings 152a. The opening 15a is formed by overlapping first openings 151a and second openings 152a. The inner periphery of the second opening 152a in the second insulating layer 152 protrudes further inward from the opening 15a than the inner periphery of the first opening 151a in the first insulating layer 151, forming a protruding portion 152b.

[0188] 20 is a cross-sectional view of a second example of the leakage suppression structure. The second example differs from the first example in that the insulating layer 15 includes a third insulating layer 153 in addition to the first insulating layer 151 and the second insulating layer 152.

[0189] The third insulating layer 153 is provided between the circuit board 10 and the first insulating layer 151, and between the first electrode 141 and the first insulating layer 151. The third insulating layer 153 has a third opening 153a on the first surface of the first electrode 141. In the second example, the opening 15a is composed of a first opening 151a, a second opening 152a, and a third opening 153a that are overlapped with each other. The inner periphery of the third opening 153a protrudes further inward than the inner periphery of the first opening 151a. A gap 152c may be formed between the protruding portion 152b and the third insulating layer 153.

[0190] (Leakage Suppression Structure: Third and Fourth Examples) In the first and second examples, examples have been described in which the inner periphery of opening 15a in insulating layer 15 has one protruding portion 152b. However, the number of protruding portions that the inner periphery of opening 15a in insulating layer 15 has is not limited to these examples, and the inner periphery of opening 15a in insulating layer 15 may have two or more protruding portions. Below, an example (third example) in which the inner periphery of opening 15a in insulating layer 15 has two protruding portions and an example (fourth example) in which the inner periphery of opening 15a in insulating layer 15 has three protruding portions will be described.

[0191] 21 is a cross-sectional view of a third example of the leakage suppression structure. The third example differs from the second example in that insulating layer 15 has fourth insulating layer 154 and fifth insulating layer 155 in this order on the first surface of second insulating layer 152, and that the inner periphery of opening 15a in insulating layer 15 has two eave-shaped protrusions 152b and 155b.

[0192] The light-emitting unit U1 and the charge generation layer 1427 included in the OLED layer 142 are cut or made highly resistant by the overhanging portion 152b and the overhanging portion 155b. The overhanging portion 155b is provided at a higher position than the overhanging portion 152b with respect to the first surface of the first electrode 141, and is spaced apart from the first surface of the second insulating layer 152. The overhanging portion 155b is set back more away from the center of the opening 15a than the overhanging portion 152b.

[0193] The fourth insulating layer 154 has a fourth opening 154a. The fifth insulating layer 155 has a fifth opening 155a. In the third example, the opening 15a is composed of a first opening 151a, a second opening 152a, a third opening 153a, a fourth opening 154a, and a fifth opening 155a, which are overlapping each other. The inner periphery of the fourth opening 154a is recessed in a direction away from the center of the opening 15a relative to the inner peripheries of the second opening 152a and the fifth opening 155a. The inner periphery of the fifth opening 155a protrudes more inward from the opening 15a than the fourth opening 154a, forming a protruding portion 155b.

[0194] 22 is a cross-sectional view of a fourth example of the leakage suppression structure. The fourth example differs from the third example in that insulating layer 15 has sixth insulating layer 156 and seventh insulating layer 157 in this order on the first surface of fifth insulating layer 155, and that the inner periphery of opening 15a in insulating layer 15 has three eave-like protrusions 152b, 155b, and 157b.

[0195] The light-emitting unit U1 and the charge generation layer 1427 included in the OLED layer 142 are cut or made highly resistant by the overhanging portion 152b, the overhanging portion 155b, and the overhanging portion 157b. The overhanging portion 157b is provided at a higher position than the overhanging portion 155b with respect to the first surface of the first electrode 141, and is spaced apart from the first surface of the fifth insulating layer 155. The overhanging portion 157b is set back more away from the center of the opening 15a than the overhanging portion 155b.

[0196] The sixth insulating layer 156 has a sixth opening 156a. The seventh insulating layer 157 has a seventh opening 157a. In the fourth example, the opening 15a is composed of a first opening 151a, a second opening 152a, a third opening 153a, a fourth opening 154a, a fifth opening 155a, a sixth opening 156a, and a seventh opening 157a, which are all overlapping each other. The inner periphery of the sixth opening 156a is recessed in a direction away from the center of the opening 15a relative to the inner peripheries of the fifth opening 155a and the seventh opening 157a. The inner periphery of the seventh opening 157a protrudes inward from the sixth opening 156a, forming a protruding portion 157b.

[0197] 23 is a cross-sectional view of a fifth example of a leakage suppression structure. The fifth example differs from the second example in that insulating layer 15 includes first insulating layer 151, second insulating layer 152, and third insulating layer 153, as well as eighth insulating layer 158, and that opening 15a of insulating layer 15 has two eave-shaped protrusions 152b and 153b on the inner periphery thereof.

[0198] The light-emitting unit U1 and the charge generation layer 1427 included in the OLED layer 142 are cut or made highly resistant by the overhanging portion 152b and the overhanging portion 153b. The overhanging portion 153b overhangs more inwardly of the opening 15a than the overhanging portion 152b. The overhanging portion 153b is located at a lower position than the overhanging portion 152b with respect to the first surface of the first electrode 141. The overhanging portion 153b is spaced apart from the first surface of the first electrode 141.

[0199] The eighth insulating layer 158 is provided between the circuit board 10 and the third insulating layer 153, and between the first electrode 141 and the third insulating layer 153. The eighth insulating layer 158 has an eighth opening 158a. In the fifth example, the opening 15a is composed of a first opening 151a, a second opening 152a, a third opening 153a, and an eighth opening 158a, which are overlapped with each other. The inner periphery of the third opening 153a in the third insulating layer 153 protrudes further inward from the opening 15a than the inner periphery of the eighth opening 158a in the eighth insulating layer 158, thereby forming a protruding portion 153b.

[0200] (Leakage Suppression Structure: Sixth Example) Figure 24 is a cross-sectional view of a sixth example of a leakage suppression structure. The sixth example differs from the first example in that insulating layer 15 has protrusion 15b1 on the outer periphery of side wall 15b instead of protrusion 152b on the inner periphery of opening 15a. Although Figure 24 shows an example in which insulating layer 15 has a single-layer structure, it may also have a laminated structure of two or more layers.

[0201] The protruding portion 15b1 protrudes outward from the outer periphery of the side wall portion 15b. A recess 15b2 is provided at a position a predetermined distance below the upper end of the outer periphery of the side wall portion 15b. By providing the recess 15b2 on the outer periphery of the side wall portion 15b in this manner, the protruding portion 15b1 is configured at the upper end of the outer periphery of the side wall portion 15b. The protruding portion 15b1 and the recess 15b2 are preferably provided around the entire periphery of the side wall portion 15b, but may be provided on a portion of the entire periphery of the side wall portion 15b.

[0202] The light-emitting unit U1 and the charge generating layer 1427 included in the OLED layer 142 are cut off or made highly resistant by the protruding portion 152b (area A shown in FIG. 24), which makes it possible to suppress current leakage between adjacent light-emitting elements 14.

[0203] In the sixth example, the outer periphery of the side wall portion 15b has one protrusion 15b1 and one recess 15b2. However, the number of protrusions 15b1 and recesses 15b2 on the outer periphery of the side wall portion 15b is not limited to this example, and the outer periphery of the side wall portion 15b may have two or more protrusions 15b1 and two or more recesses 15b2. In this case, the two or more recesses 15b2 may be arranged sequentially at a predetermined distance from the top end to the bottom end of the outer periphery of the side wall portion 15b.

[0204] (Leakage Suppression Structure: Seventh Example) FIG. 25 is a cross-sectional view of a seventh example of the leakage suppression structure. A groove 15Gv is provided between adjacent light-emitting elements 14. The groove 15Gv may be provided between light-emitting elements 14 adjacent in a predetermined direction (for example, the Y-axis direction), or may be provided so as to surround the light-emitting element 14. The groove 15Gv is formed between the insulating layer 15 and the transistor layer 13 (specifically, the interlayer insulating layer 130a １ ) is formed over the

[0205] The light-emitting unit U1 and the charge generation layer 1427 included in the OLED layer 142 are cut or made highly resistant by the groove 15Gv. This makes it possible to suppress current leakage between adjacent light-emitting elements 14. Here, "high resistance" means that the light-emitting unit U1 and the charge generation layer 1427 have extremely thin film thicknesses within the groove 15Gv, thereby making them highly resistant, as shown in FIG. 26 . Of the layers included in the OLED layer 142, the light-emitting unit U2 located above the charge generation layer 1427 straddles the groove 15Gv.

[0206] 27 is a cross-sectional view of an eighth example of the leakage suppression structure. １ and a plurality of contact electrodes 13c are formed on the transistor layer 13 (specifically, the interlayer insulating layer 130a １) are provided in each via 13b. １ electrically connects the first electrode 141 and the source electrode 131S. Grooves 15Gv are provided between adjacent light-emitting elements 14. The bottom surfaces of the grooves 15Gv are formed by the first surfaces of the contact electrodes 13c. Auxiliary electrodes 13d are provided on the side surfaces of each groove 15Gv. The auxiliary electrodes 13d are in contact with the first surfaces of the contact electrodes 13c.

[0207] The OLED layer 142 is cut by the grooves 15Gv. While FIG. 27 shows an example in which the second electrode 143 is also cut by the grooves 15Gv, the second electrode 143 may not be cut by the grooves 15Gv and may be connected between adjacent light-emitting elements 14. The second electrode 143 is in contact with the auxiliary electrode 13d on the side surface of the groove 15Gv. The second electrode 143 is in contact with the contact electrode 13c on the bottom surface of the groove 15Gv. A protective layer 16 may be provided on the first surface of the second electrode 143 so as to follow the shape of the second electrode 143.

[0208] In the eighth example, the leakage current between adjacent light emitting elements 14 can be drawn into the auxiliary electrode 13d and the contact electrode 13c. Therefore, the current leakage between adjacent light emitting elements 14 can be suppressed.

[0209] (Leakage Suppression Structure: Ninth Example) Fig. 28 is a cross-sectional view of a ninth example of the leakage suppression structure. In the ninth example, the display device 1 includes a plurality of third electrodes 145. The plurality of third electrodes 145 are provided on the second surface side of the OLED layer 142, similar to the plurality of first electrodes 141. Each third electrode 145 is disposed between adjacent first electrodes 141.

[0210] 29 is a plan view illustrating the arrangement of the first electrodes 141 and the third electrodes 145. The multiple third electrodes 145 are a group of island-shaped electrodes having a smaller area than the first electrodes 141. The multiple third electrodes 145 are regularly arranged so as to be equally spaced from adjacent first electrodes 141 in a plan view. From another perspective, the multiple third electrodes 145 are arranged at a predetermined distance from each first electrode 141 and so as to surround it in a plan view.

[0211] A plurality of source electrodes 131S, a plurality of wirings 13e, and a plurality of vias 13b １ and a plurality of vias 13f are formed in the transistor layer 13 (specifically, the interlayer insulating layer 130a １ ) are provided in each via 13b. １ electrically connects the first electrode 141 and the source electrode 131S. Each via 13f electrically connects the third electrode 145 and the wiring 13e.

[0212] The plurality of third electrodes 145 are connected to the internal circuitry of the display device 1 via vias 13 f, wiring 13 e, etc., and are commonly set to a constant potential. Specifically, when a voltage is applied to the OLED layer 142, the potential of the third electrodes 145 is set to be smaller than the sum of the potential of the second electrodes 143 and the threshold voltage for the OLED layer 142. As a result, even if a voltage is applied to the OLED layer 142 by the first electrodes 141 and the second electrodes 143, causing a leakage current from the first electrodes 141, the leakage current flows preferentially to the third electrodes 145. This prevents the leakage current from flowing from the first electrodes 141 to adjacent first electrodes 141.

[0213] (Leakage Suppression Structure: Other Examples) In the first to seventh examples, the OLED layer 142 has two light-emitting units U1 and U2. However, the configuration of the OLED layer 142 is not limited to these examples, and the OLED layer 142 may have a single light-emitting unit U, or may have three or more light-emitting units U.

[0214] In the first to seventh examples, the light-emitting unit U1 and the charge generation layer 1427 included in the OLED layer 142 are cut or made highly resistant by the overhanging portions 152b, 153b, 155b, 157b, and 15b1 and the grooves 15Gv (hereinafter referred to as "overhanging portions 152b and grooves 15Gv, etc."). However, the layers that are cut or made highly resistant by the overhanging portions 152b and grooves 15Gv, etc. are not limited to these examples. For example, the hole injection layer 1421 or the hole transport layer 1422 included in the OLED layer 142 may be cut or made highly resistant by the overhanging portions 152b and grooves 15Gv, etc., or both the hole injection layer 1421 and the hole transport layer 1422 included in the OLED layer 142 may be cut or made highly resistant by the overhanging portions 152b and grooves 15Gv, etc. When the OLED layer 142 has three or more light-emitting units U, two or more light-emitting units U and two or more charge generating layers 1427 included in the OLED layer 142 may be cut or made highly resistant by the protrusion 152b and the groove 15Gv, etc.

[0215] <5 Relationship between normals passing through the centers of the light-emitting unit, lens member, and wavelength selection unit> Below, the relationship between the normal LN passing through the center of the light-emitting unit, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection unit will be described. Here, the light-emitting unit is, for example, the light-emitting element 14 in the display device 1 according to one embodiment. The lens member is, for example, the lens 201 in the display device 1 according to Modification 10. The wavelength selection unit is, for example, the colored layer 181 in the display device 1 according to one embodiment.

[0216] The size of the wavelength selecting section may be changed as appropriate in accordance with the light emitted by the light emitting section, or in the case where a light absorbing section (e.g., a black matrix section) is provided between the wavelength selecting sections of adjacent light emitting sections, the size of the light absorbing section may be changed as appropriate in accordance with the light emitted by the light emitting section. Also, the size of the wavelength selecting section may be determined by the distance (offset amount) d between the normal line passing through the center of the light emitting section and the normal line passing through the center of the wavelength selecting section. ０ The planar shape of the wavelength selection section may be the same as, similar to, or different from the planar shape of the lens member.

[0217] Below, with reference to Figures 30A, 30B, 30C, and 31, we will explain the relationship between the normals passing through the centers of the light-emitting unit 51, wavelength selection unit 52, and lens member 53 when they are arranged in this order.

[0218] As shown in FIG. 30A, the normal line LN passing through the center of the light emitting unit 51, the normal line LN″ passing through the center of the wavelength selecting unit 52, and the normal line LN′ passing through the center of the lens member 53 may coincide with each other. That is, D ０ = 0, d ０ = 0. However, D ０ represents the distance (offset amount) between the normal line LN passing through the center of the light-emitting portion 51 and the normal line LN′ passing through the center of the lens member 53, and d ０ represents the distance (offset amount) between the normal line LN passing through the center of the light emitting section 51 and the normal line LN″ passing through the center of the wavelength selecting section 52.

[0219] As shown in FIG. 30B, the normal line LN passing through the center of the light-emitting unit 51 and the normal line LN" passing through the center of the wavelength selecting unit 52 are aligned, but the normal line LN passing through the center of the light-emitting unit 51 and the normal line LN" passing through the center of the wavelength selecting unit 52 may not be aligned with the normal line LN' passing through the center of the lens member 53. That is, D ０ >0, d ０ = 0.

[0220] As shown in FIG. 30C, the normal line LN passing through the center of the light emitting unit 51, the normal line LN" passing through the center of the wavelength selecting unit 52, and the normal line LN' passing through the center of the lens member 53 do not coincide with each other, and the normal line LN" passing through the center of the wavelength selecting unit 52 and the normal line LN' passing through the center of the lens member 53 may coincide with each other. That is, D ０ >0, d ０ >0, D ０ = d ０ may be.

[0221] As shown in FIG. 31, a configuration may be adopted in which the normal line LN passing through the center of the light-emitting unit 51, the normal line LN″ passing through the center of the wavelength selecting unit 52, and the normal line LN′ passing through the center of the lens member 53 do not coincide with each other. That is, D ０ >0, d ０ >0, D ０≠d ０ Here, it is preferable that the center of the wavelength selection unit 52 (position indicated by a black square in FIG. 31 ) is located on a straight line LL connecting the center of the light emitting unit 51 and the center of the lens member 53 (position indicated by a black circle in FIG. 31 ). Specifically, the distance between the center of the light emitting unit 51 and the center of the wavelength selection unit 52 in the thickness direction (vertical direction in FIG. 31 ) is LL. １ , the distance in the thickness direction between the center of the wavelength selection unit 52 and the center of the lens member 53 is LL ２ When this is done, D ０ >d ０ >0, and taking into account manufacturing variations, d ０ :D ０ =LL １ : (LL １ +LL ２ Here, the thickness direction refers to the thickness direction of the light emitting section 51, the wavelength selecting section 52, and the lens member 53.

[0222] Below, with reference to Figures 32A, 32B, and 33, we will explain the relationship between the normals passing through the centers of the light-emitting unit 51, lens member 53, and wavelength selection unit 52 when they are arranged in this order.

[0223] As shown in FIG. 32A, a normal line LN passing through the center of the light emitting unit 51, a normal line LN″ passing through the center of the wavelength selecting unit 52, and a normal line LN′ passing through the center of the lens member 53 may be configured to coincide with each other. That is, D ０ >0, d ０ = 0.

[0224] As shown in FIG. 32B, the normal line LN passing through the center of the light emitting unit 51, the normal line LN" passing through the center of the wavelength selecting unit 52, and the normal line LN' passing through the center of the lens member 53 do not coincide with each other, and the normal line LN" passing through the center of the wavelength selecting unit 52 and the normal line LN' passing through the center of the lens member 53 may coincide with each other. That is, D ０ >0, d ０ >0, D ０ = d ０ may be.

[0225] As shown in FIG. 33 , a configuration may be adopted in which the normal line LN passing through the center of the light-emitting section 51, the normal line LN″ passing through the center of the wavelength selecting section 52, and the normal line LN′ passing through the center of the lens member 53 do not all coincide. Here, it is preferable that the center of the lens member 53 (the position indicated by the black circle in FIG. 33 ) is located on a straight line LL connecting the center of the light-emitting section 51 and the center of the wavelength selecting section 52 (the position indicated by the black square in FIG. 33 ). Specifically, the distance between the center of the light-emitting section 51 and the center of the lens member 53 in the thickness direction (the vertical direction in FIG. 33 ) is defined as LL. ２ , the distance in the thickness direction between the center of the lens member 53 and the center of the wavelength selection unit 52 is LL １ When this is the case, d ０ >D ０ >0, and taking into account manufacturing variations, D ０ :d ０ =LL ２ : (LL １ +LL ２ Here, the thickness direction refers to the thickness direction of the light emitting section 51, the wavelength selecting section 52, and the lens member 53.

[0226] 6. Example of Resonator Structure The subpixel 2 included in the display device 1 according to an embodiment may be configured to have a resonator structure that resonates light generated by the light-emitting element 14. The resonator structure will be described below with reference to the drawings. In the following description, the first surface of each layer may be referred to as the upper surface.

[0227] (Resonator Structure: First Example) Fig. 34A is a schematic cross-sectional view for explaining a first example of the resonator structure. In the following description, when the light-emitting elements provided corresponding to the sub-pixels 2R, 2G, and 2B are referred to collectively without any particular distinction, these light-emitting elements may be referred to as light-emitting elements 14. When the light-emitting elements provided corresponding to the sub-pixels 2R, 2G, and 2B are to be distinguished from one another, these light-emitting elements may be referred to as light-emitting elements 14. Ｒ , 14 Ｇ , 14 Ｂ The portions of the OLED layer 142 corresponding to the sub-pixels 2R, 2G, and 2B are called the OLED layer 142 Ｒ , OLED layer 142Ｇ , OLED layer 142 Ｂ This is what happens.

[0228] In the first example, the first electrode 141 is formed to have a common film thickness in each light emitting element 14. The same is true for the second electrode 143.

[0229] A reflector 71 is disposed below the first electrode 141 of the light-emitting element 14, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates the light generated by the OLED layer 142 is formed between the reflector 71 and the second electrode 143. In the following description, the optical adjustment layers 72 provided corresponding to the sub-pixels 2R, 2G, and 2B are referred to as the optical adjustment layers 72. Ｒ , 72 Ｇ , 72 Ｂ This is what happens.

[0230] The reflector 71 is formed to have a common film thickness for each light-emitting element 14. The film thickness of the optical adjustment layer 72 varies depending on the color to be displayed by the sub-pixel. Ｒ , 72 Ｇ , 72 Ｂ By having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0231] In the example shown in FIG. 34A, the light emitting element 14 Ｒ , 14 Ｇ , 14 Ｂ As described above, the film thickness of the optical adjustment layer 72 varies depending on the color to be displayed by the sub-pixel. Therefore, the position of the upper surface of the second electrode 143 is aligned with the position of the upper surface of the light-emitting element 14. Ｒ , 14 Ｇ , 14 Ｂ It varies depending on the type of

[0232] The reflector 71 can be made of a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy containing any of these as its main component.

[0233] The optical adjustment layer 72 is made of silicon nitride (SiN ｘ ), silicon oxide (SiO ｘ ), silicon oxynitride (SiOｘ N ｙ The optical adjustment layer 72 may be formed using an inorganic insulating material such as acrylic resin or polyimide resin, or an organic resin material such as acrylic resin or polyimide resin. The optical adjustment layer 72 may be a single layer or a laminated film of a plurality of these materials. The number of laminated layers may vary depending on the type of light-emitting element 14.

[0234] The first electrode 141 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0235] The second electrode 143 needs to function as a semi-transmissive reflective film. The second electrode 143 can be formed using magnesium (Mg) or silver (Ag), a magnesium-silver alloy (MgAg) containing these as main components, or an alloy containing an alkali metal or an alkaline earth metal.

[0236] (Resonator Structure: Second Example) FIG. 34B is a schematic cross-sectional view for explaining a second example of the resonator structure.

[0237] In the second example, the first electrode 141 and the second electrode 143 are also formed to have the same film thickness in each light emitting element 14 .

[0238] Also in the second example, a reflector 71 is disposed below the first electrode 141 of the light-emitting element 14, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates light generated by the OLED layer 142 is formed between the reflector 71 and the second electrode 143. As in the first example, the reflector 71 is formed to have the same film thickness for each light-emitting element 14, and the film thickness of the optical adjustment layer 72 differs depending on the color to be displayed by the sub-pixel.

[0239] In the first example shown in FIG. 34A, the light emitting element 14 Ｒ , 14 Ｇ , 14 Ｂ The upper surfaces of the reflectors 71 are aligned with each other, and the upper surface of the second electrode 143 is positioned so as to be flush with the light emitting element 14. Ｒ , 14 Ｇ , 14 Ｂ It differed depending on the type of

[0240] In contrast, in the second example shown in FIG. 34B, the upper surface of the second electrode 143 is Ｒ , 14 Ｇ , 14 Ｂ In order to align the upper surfaces of the second electrodes 143, the light emitting elements 14 Ｒ , 14 Ｇ , 14 Ｂ The upper surface of the reflector 71 is Ｒ , 14 Ｇ , 14 Ｂ Therefore, the lower surface of the reflector 71 (in other words, the upper surface of the base layer (insulating layer) 73) has a stepped shape according to the type of the light emitting element 14.

[0241] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 141 and the second electrode 143 are the same as those described in the first example, and therefore description thereof will be omitted.

[0242] (Cavity Resonator Structure: Third Example) Fig. 35A is a schematic cross-sectional view illustrating a third example of the cavity resonator structure. In the following description, the reflectors 71 provided corresponding to the sub-pixels 2R, 2G, and 2B are referred to as the reflectors 71 Ｒ , 71 Ｇ , 71 Ｂ This is what happens.

[0243] In the third example, the first electrode 141 and the second electrode 143 are also formed to have the same film thickness in each light emitting element 14 .

[0244] Also in the third example, a reflector 71 is disposed below the first electrode 141 of the light-emitting element 14, with an optical adjustment layer 72 sandwiched therebetween. A resonator structure that resonates the light generated by the OLED layer 142 is formed between the reflector 71 and the second electrode 143. As in the first and second examples, the film thickness of the optical adjustment layer 72 varies depending on the color to be displayed by the sub-pixel. As in the second example, the position of the upper surface of the second electrode 143 is located at the same position as the first electrode 141 of the light-emitting element 14. Ｒ , 14 Ｇ , 14 Ｂ are arranged to align.

[0245] In the second example shown in FIG. 35B, the lower surface of the reflector 71 has a stepped shape according to the type of light emitting element 14 in order to align the upper surface of the second electrode 143 .

[0246] In contrast, in the third example shown in FIG. 35A, the film thickness of the reflector 71 is Ｒ , 14 Ｇ , 14 Ｂ More specifically, the reflector 71 is set to have a different reflecting surface depending on the type of the reflector. Ｒ , 71 Ｇ , 71 Ｂ The film thickness is set so that the bottom surfaces of the

[0247] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 141 and the second electrode 143 are the same as those described in the first example, and therefore will not be described again.

[0248] (Fourth Example of Resonator Structure) Fig. 35B is a schematic cross-sectional view illustrating a fourth example of the resonator structure. In the following description, the first electrodes 141 provided corresponding to the sub-pixels 2R, 2G, and 2B are referred to as first electrodes 141 Ｒ , 141 Ｇ , 141 Ｂ This is what happens.

[0249] 35A , the first electrodes 141 and second electrodes 143 of each light-emitting element 14 are formed to have the same film thickness. A reflector 71 is disposed below the first electrodes 141 of the light-emitting elements 14 with an optical adjustment layer 72 sandwiched therebetween.

[0250] In contrast, in the fourth example shown in FIG. 35B, the optical adjustment layer 72 is omitted, and the film thickness of the first electrode 141 is set to the same as that of the light emitting element 14 Ｒ , 14 Ｇ , 14 Ｂ The settings were different depending on the type of

[0251] The reflector 71 is formed to have a common thickness for each light-emitting element 14. The thickness of the first electrode 141 varies depending on the color to be displayed by the sub-pixel. Ｒ , 141 Ｇ , 141 ＢBy having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0252] The materials constituting the reflector 71, the optical adjustment layer 72, the first electrode 141 and the second electrode 143 are the same as those described in the first example, and therefore will not be described again.

[0253] (Resonator Structure: Fifth Example) FIG. 36A is a schematic cross-sectional view for explaining a fifth example of the resonator structure.

[0254] 34A , the first electrode 141 and the second electrode 143 are formed to have the same film thickness in each light-emitting element 14. A reflector 71 is disposed below the first electrode 141 of the light-emitting element 14 with an optical adjustment layer 72 sandwiched therebetween.

[0255] 36A, the optical adjustment layer 72 is omitted, and instead, an oxide film 74 is formed on the surface of the reflector 71. The thickness of the oxide film 74 is Ｒ , 14 Ｇ , 14 Ｂ In the following description, the oxide films 74 provided corresponding to the sub-pixels 2R, 2G, and 2B are referred to as oxide films 74 Ｒ , 74 Ｇ , 74 Ｂ This is what happens.

[0256] The thickness of the oxide film 74 varies depending on the color to be displayed by the sub-pixel. Ｒ , 74 Ｇ , 74 Ｂ By having different film thicknesses, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light corresponding to the color to be displayed.

[0257] The oxide film 74 is a film obtained by oxidizing the surface of the reflector 71, and is made of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 74 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 71 and the second electrode 143.

[0258] Light-emitting element 14Ｒ , 14 Ｇ , 14 Ｂ The oxide film 74, which has a thickness that varies depending on the type of material, can be formed, for example, as follows.

[0259] First, a container is filled with an electrolyte, and the substrate on which the reflector 71 is formed is immersed in the electrolyte. An electrode is disposed so as to face the reflector 71.

[0260] Then, a positive voltage is applied to the reflector 71 with the electrode as a reference, and the reflector 71 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Ｒ , 71 Ｇ , 71 Ｂ Anodic oxidation is performed while a voltage according to the type of light emitting element 14 is applied to each of the layers 74. This allows oxide films 74 with different thicknesses to be formed all at once.

[0261] The materials constituting the reflector 71, the first electrode 141 and the second electrode 143 are the same as those described in the first example, and therefore a description thereof will be omitted.

[0262] (Resonator Structure: Sixth Example) FIG. 36B is a schematic cross-sectional view for explaining a sixth example of the resonator structure.

[0263] In the sixth example, the light emitting element 14 is configured by laminating a first electrode 141, an OLED layer 142, and a second electrode 143. However, in the sixth example, the first electrode 141 is formed so as to function both as an electrode and a reflector. The first electrode (also serving as a reflector) 141 is formed so as to function as a light emitting element 14. Ｒ , 14 Ｇ , 14 Ｂ The first electrode (also serving as a reflector) 141 is formed of a material having an optical constant selected according to the type of color to be displayed. By varying the phase shift due to the first electrode (also serving as a reflector) 141, it is possible to set the optical distance that produces the optimum resonance for the wavelength of light according to the color to be displayed.

[0264] The first electrode (also serving as a reflector) 141 can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing these as a main component. ＲFirst electrode (also serving as a reflector) 141 Ｒ is formed of copper (Cu), and the light emitting element 14 Ｇ First electrode (also serving as a reflector) 141 Ｇ and light-emitting element 14 Ｂ First electrode (also serving as a reflector) 141 Ｂ The insulating film 11 may be made of aluminum.

[0265] The material constituting the second electrode 143 is the same as that described in the first example, and therefore a description thereof will be omitted.

[0266] (Resonator Structure: Seventh Example) FIG. 37 is a schematic cross-sectional view for explaining a seventh example of the resonator structure.

[0267] The seventh example is basically the same as the light emitting element 14 Ｒ , 14 Ｇ The sixth example is applied to the light-emitting element 14 Ｂ In this configuration, the optical distance that generates the optimum resonance for the wavelength of light corresponding to the color to be displayed can also be set.

[0268] Light-emitting element 14 Ｒ , 14 Ｇ First electrode (also serving as a reflector) 141 used in Ｒ , 141 Ｇ The electrode can be made of a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or an alloy containing any of these as a main component.

[0269] Light-emitting element 14 Ｂ Reflector 71 used in Ｂ , optical adjustment layer 72 Ｂ and the first electrode 141 Ｂ The materials constituting the second embodiment are the same as those described in the first embodiment, and therefore will not be described here.

[0270] 7. Application Examples (Electronic Devices) The display device 1 according to an embodiment may be provided in various electronic devices. The display device 1 according to an embodiment is particularly suitable for eyewear devices such as head-mounted displays, or electronic viewfinders for video cameras or single-lens reflex cameras that require high resolution and are used in close proximity to the eyes with magnification.

[0271] 38A and 38B show an example of the appearance of a digital still camera 310. This digital still camera 310 is an interchangeable lens single-lens reflex type, and has an interchangeable taking lens unit (interchangeable lens) 312 located approximately in the center of the front of a camera main body 311, and a grip part 313 for the photographer to hold on the left side of the front.

[0272] A monitor 314 is provided at a position shifted to the left from the center on the back of the camera body 311. An electronic viewfinder (eyepiece window) 315 is provided above the monitor 314. By looking through the electronic viewfinder 315, the photographer can visually confirm the optical image of the subject guided by the photographing lens unit 312 and determine the composition. The electronic viewfinder 315 includes any one of the display devices 1 according to an embodiment.

[0273] 39 shows an example of the appearance of a head-mounted display 320. The head-mounted display 320 is an example of an eyewear device. The head-mounted display 320 has, for example, ear hooks 322 on both sides of a glasses-shaped display unit 321 for wearing on the user's head. The display unit 321 includes any one of the display devices 1 according to an embodiment.

[0274] 40 shows an example of the appearance of a television device 330. This television device 330 has, for example, an image display screen unit 331 including a front panel 332 and a filter glass 333, and this image display screen unit 331 is equipped with any one of the display devices 1 according to an embodiment.

[0275] 41 shows an example of the appearance of a see-through head mounted display 340. The see-through head mounted display 340 is an example of an eyewear device. The see-through head mounted display 340 includes a main body 341, an arm 342, and a lens barrel 343.

[0276] The main body 341 is connected to the arm 342 and the glasses 350. Specifically, an end of the long side of the main body 341 is coupled to the arm 342, and one side of the main body 341 is connected to the glasses 350 via a connecting member. The main body 341 may also be worn directly on the head of a human body.

[0277] The main body 341 incorporates a control board for controlling the operation of the see-through head mounted display 340 and a display unit. The arm 342 connects the main body 341 to the lens barrel 343 and supports the lens barrel 343. Specifically, the arm 342 is coupled to an end of the main body 341 and an end of the lens barrel 343, respectively, and fixes the lens barrel 343. The arm 342 also incorporates a signal line for communicating data related to images provided from the main body 341 to the lens barrel 343.

[0278] The lens barrel 343 projects image light provided from the main body 341 via the arm 342 through the eyepiece 351 toward the eyes of the user wearing the see-through head mounted display 340. In this see-through head mounted display 340, the display unit of the main body 341 includes any one of the display devices 1 according to an embodiment.

[0279] 42 shows an example of the appearance of a smartphone 360. The smartphone 360 ​​includes a display unit 361 that displays various information, an operation unit 362 that includes buttons and the like that accept operation inputs from a user, and the like. The display unit 361 includes any one of the display devices 1 and the like according to an embodiment.

[0280] (Specific Example 6) The display device 1 according to an embodiment may be provided in various displays provided in vehicles.

[0281] 43A and 43B are diagrams showing an example of the internal configuration of a vehicle 500 equipped with various displays. Specifically, Fig. 43A is a diagram showing an example of the internal appearance of the vehicle 500 from the rear to the front of the vehicle 500, and Fig. 43B is a diagram showing an example of the internal appearance of the vehicle 500 from diagonally rear to diagonally front of the vehicle 500.

[0282] The vehicle 500 includes a center display 501, a console display 502, a head-up display 503, a digital rearview mirror 504, a steering wheel display 505, and a rear entertainment display 506. At least one of these displays includes any one of the display devices 1 according to an embodiment. For example, all of these displays may include any one of the display devices 1 according to an embodiment.

[0283] The center display 501 is disposed in a portion of the dashboard facing the driver's seat 508 and the passenger seat 509. While FIGS. 43A and 43B show an example of a horizontally elongated center display 501 extending from the driver's seat 508 to the passenger seat 509, the screen size and location of the center display 501 are arbitrary. The center display 501 can display information detected by various sensors. As a specific example, the center display 501 can display an image captured by an image sensor, a distance image to obstacles in front of or to the side of the vehicle 500 measured by a ToF sensor, the body temperature of a passenger detected by an infrared sensor, and the like. The center display 501 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information.

[0284] The safety-related information includes information such as detection of drowsiness, distraction, child mischief, whether a seatbelt is fastened, and whether a passenger has been abandoned. This information is detected, for example, by a sensor placed on the rear side of the center display 501. The operation-related information is obtained by detecting gestures related to passenger operations using a sensor. The detected gestures may include operations of various equipment within the vehicle 500. For example, operations of the air conditioning system, navigation system, AV system, lighting system, etc. are detected. The life log includes life logs of all passengers. For example, the life log includes a record of each passenger's actions while on board. By acquiring and saving the life log, the condition of the passenger at the time of the accident can be confirmed. The health-related information is obtained by detecting the passenger's body temperature using a sensor such as a temperature sensor, and inferring the passenger's health condition based on the detected body temperature. Alternatively, an image sensor may be used to capture an image of the passenger's face, and the passenger's health condition may be inferred from the facial expression in the image. Furthermore, the system may have an automated voice conversation with the occupant and estimate the occupant's health condition based on the occupant's responses. The authentication / identification-related information includes a keyless entry function that uses a sensor to perform facial authentication, a function that automatically adjusts seat height and position using facial recognition, etc. The entertainment-related information includes a function that uses a sensor to detect operation information of an AV device by the occupant, a function that recognizes the occupant's face using a sensor and provides content suitable for the occupant via the AV device, etc.

[0285] The console display 502 can be used to display, for example, life log information. The console display 502 is disposed near a shift lever 511 on a center console 510 between a driver's seat 508 and a passenger seat 509. Information detected by various sensors can also be displayed on the console display 502. Furthermore, the console display 502 may display an image of the vehicle's surroundings captured by an image sensor, or an image showing the distance to an obstacle around the vehicle.

[0286] The head-up display 503 is virtually displayed behind the windshield 512 in front of the driver's seat 508. The head-up display 503 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. Because the head-up display 503 is often virtually located in front of the driver's seat 508, it is suitable for displaying information directly related to the operation of the vehicle 500, such as the speed of the vehicle 500 and the remaining fuel (battery) level.

[0287] The digital rearview mirror 504 can not only display the rear of the vehicle 500 but also the status of passengers in the rear seats. Therefore, by placing a sensor on the back side of the digital rearview mirror 504, it can be used to display life log information, for example.

[0288] The steering wheel display 505 is disposed near the center of the steering wheel 513 of the vehicle 500. The steering wheel display 505 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 505 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, and for displaying information related to the operation of AV equipment, air conditioning equipment, etc.

[0289] The rear entertainment display 506 is attached to the back side of the driver's seat 508 and the passenger seat 509 and is intended for viewing by rear seat passengers. The rear entertainment display 506 can be used to display, for example, at least one of safety-related information, operation-related information, a life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, since the rear entertainment display 506 is located directly in front of the rear seat passengers, information related to the rear seat passengers is displayed on the rear entertainment display 506. For example, the rear entertainment display 506 may display information related to the operation of an AV device or an air conditioning system, or may display the results of measuring the body temperature of the rear seat passengers using a temperature sensor.

[0290] A sensor may be arranged on the rear surface of the display device 1 or the like, enabling distances to surrounding objects to be measured. Optical distance measurement methods are broadly divided into passive and active types. Passive methods measure distance by receiving light from an object without projecting light from the sensor onto the object. Passive methods include the lens focusing method, the stereo method, and the monocular vision method. Active methods measure distance by projecting light onto an object and receiving reflected light from the object with a sensor. Active methods include the optical radar method, the active stereo method, the photometric stereo method, the moire topography method, and the interferometry method. The display device 1 or the like according to an embodiment can be applied to any of these distance measurement methods. The above-described passive or active distance measurement can be performed by using a sensor arranged on the rear surface of the display device 1 or the like according to an embodiment.

[0291] REFERENCE SIGNS LIST 1 Display device 2R, 2G, 2B Sub-pixels 10 Circuit substrate 11 Transistor layer 11a １ , 11a ２ , 11a ３ , 11a ４ , 11a ５ Via 111 Semiconductor substrate 112 Interlayer insulating layer 113S Source region 113D Drain region 113G Gate electrode 114 Element isolation region 115 Gate insulating layer 12 Wiring layer 12a １ , 12a ２ , 12a ３ , 12a ４ , 12a ５ Wiring 12b １ , 12b ２ , 12b ３ , 12a ５ Wiring 12c １ , 12c ２ Wiring 12d １ , 12d ２ , 12d ３ , 12d ５ Via 12e １ , 12e ２ Via 13 Transistor layer 13a １ , 13a２ Via 13b １ Vias 130, 130A, 130B Stacked body 130a １ , 130a ２　　 Interlayer insulating layer 130a ３ Central insulating layer 130a ４ Element isolation insulating layer 130S １ Inner circumferential side 130S ２ Outer peripheral side surface 131S Source electrode (first electrode) 131D Drain electrode (second electrode) 131G Gate electrode 131G １ , 131G ２ Gate electrodes (first gate electrode, second gate electrode) 132S, 132D Conductive portion (first conductive portion, second conductive portion) 132S １ , 132D １ 1st part 132S ２ , 132D ２ Second portion 133: Oxide semiconductor layer 134: Gate insulating layer 134I １ , 134I ２ Gate insulating layer 135 Interlayer insulating layer 135a １ First insulating layer 135a ２Second insulating layer 136D Conductive portion 14 Light-emitting element 141 First electrode 142 OLED layer 143 Second electrode 15 Insulating layer 16 Protective layer 17 Planarization layer 18 Color filter 181R, 181G, 181B Colored layer 19 Planarization layer 20 Lens array 201 Lens 30 Pixel array section 31 Write scanning section 31a Scanning line 32 First driving scanning section 32a First driving line 33 Second driving scanning section 33a Second driving line 34 Signal output section 34a Signal line 310 Digital still camera 320 Head-mounted display 330 Television device 340 See-through head-mounted display 360 Smartphone 500 Vehicle Tr1 Drive transistor (second semiconductor element) Tr2 Light-emitting control transistor (second semiconductor element) Tr3: write transistor (first semiconductor element) Tr4: switching transistor (first semiconductor element) RE1: central region (first region) RE2: peripheral region (second region)

Claims

1. A semiconductor device comprising: an oxide semiconductor layer having an outer peripheral surface; a first conductive portion connected to the outer peripheral surface and extending from the outer peripheral surface in a first thickness direction of the oxide semiconductor layer; and a first electrode connected to the first conductive portion.

2. The semiconductor device according to claim 1, further comprising: a second conductive portion connected to a central portion of the oxide semiconductor layer and extending from the central portion in a second thickness direction that is the first thickness direction or the direction opposite to the first thickness direction; a second electrode connected to the second conductive portion; and a first gate electrode provided between the outer peripheral surface and the central portion in a plan view.

3. The semiconductor device according to claim 2, wherein the first gate electrode and the oxide semiconductor layer have an annular shape in a plan view, and the central portion is an inner peripheral surface of the oxide semiconductor layer.

4. The semiconductor device according to claim 2, wherein the first gate electrode, the first conductive portion, and the second conductive portion have a concentric shape in a plan view.

5. The semiconductor device according to claim 2, wherein the first conductive portion and the second conductive portion have a cylindrical shape.

6. The semiconductor device according to claim 2, wherein the first gate electrode has an annular shape in a plan view, and the central portion is a central portion of a first surface of the oxide semiconductor layer exposed from an opening of the first gate electrode.

7. The semiconductor device according to claim 2, wherein the first gate electrode and the first conductive portion have a concentric shape centered on the second conductive portion in a plan view.

8. The semiconductor device according to claim 2, wherein the first conductive portion has a cylindrical shape and the second conductive portion has a columnar shape.

9. The semiconductor device according to claim 1, further comprising: a second electrode provided at a central portion of the oxide semiconductor layer; and a first gate electrode provided between the outer peripheral surface and the second electrode in a plan view.

10. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains at least one metal selected from the group consisting of indium, gallium, and zinc.

11. The semiconductor device according to claim 1, wherein the first conductive portion and the oxide semiconductor layer contain the same kind of metal.

12. The semiconductor device according to claim 1, wherein the first conductive portion has a first portion containing a transparent conductive material and a second portion containing a metal, and the oxide semiconductor layer and the first portion contain the same kind of metal.

13. Further comprising a first insulating layer provided on the first gate electrode so as to cover a side surface of the first gate electrode, and a second insulating layer provided on the first insulating layer, wherein an etching rate of the second insulating layer is smaller than an etching rate of the first insulating layer. The semiconductor device according to claim 2.

14. Further comprising a second gate electrode provided between the outer peripheral side surface and the central portion in a plan view, wherein the oxide semiconductor layer is provided between the first gate electrode and the second gate electrode. The semiconductor device according to claim 2.

15. A semiconductor device comprising a first oxide semiconductor layer having a first outer peripheral side surface, a second oxide semiconductor layer having a second outer peripheral side surface, a first conductive portion connected to the first outer peripheral side surface and the second outer peripheral side surface and extending in one thickness direction of the first oxide semiconductor layer from the first outer peripheral side surface, and a first electrode connected to the first conductive portion.

16. A second conductive portion connected to a first central portion of the first oxide semiconductor layer and a second central portion of the second oxide semiconductor layer and extending in the one first thickness direction from the first central portion, a second electrode connected to the second conductive portion, a first gate electrode provided between the first outer peripheral side surface and the first central portion in a plan view, and a second gate electrode provided between the second outer peripheral side surface and the second central portion in a plan view. The semiconductor device according to claim 15.

17. A display device comprising a circuit board including the semiconductor device according to claim 1, and a light emitting element.

18. The semiconductor device is a first semiconductor device, the circuit board further includes a second semiconductor device, and the first semiconductor device is provided above the second semiconductor device. The display device according to claim 17.

19. The light emitting element is an organic light emitting diode element, a light emitting diode element, or a liquid crystal display element. The display device according to claim 17.

20. An electronic device including the semiconductor device according to claim 1.

Images