Electronic element including light-receiving element and light-emitting element, and display device including same

Abstract

Provided is an electronic element including: a light-receiving element including a first active layer; a light-emitting element including a second active layer; and a switch for turning on or off at least one of the light-receiving element and the light-emitting element, wherein a first semiconductor layer and a third semiconductor layer, containing nitride doped with an N type, and a second semiconductor layer containing nitride doped with a P type are included, and the switch includes first and second switches so that an electric field is formed between first and third electrodes and between second and fourth electrodes in response to driving of the first and second switches.

Description

Electronic device including a light-receiving element and a light-emitting element, and a display device including the same

[0001] The present invention relates to an electronic device including a light-receiving element and a light-emitting element, and a display device including the same.

[0002] As the information society evolves, demand for display devices for displaying images is increasing in various forms. Accordingly, various display devices, such as liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light-emitting displays (OLEDs), are now being utilized.

[0003] An organic light-emitting display device has a structure in which an organic light-emitting element including a light-emitting layer is provided between a cathode that injects electrons and an anode that injects holes. The organic light-emitting display device is a display device that utilizes the principle that when electrons generated from the cathode and holes generated from the anode are injected into the light-emitting layer, the injected electrons and holes combine to generate excitons, and the generated excitons fall from an excited state to a ground state, thereby emitting light.

[0004] A photovoltaic device, such as a solar cell, is a device that converts light energy into electrical energy by utilizing the properties of semiconductors.

[0005] A solar cell has a PN junction structure that joins a P (positive) type semiconductor and an N (negative) type semiconductor, and when sunlight is incident on a solar cell of this structure, holes and electrons are generated within the semiconductor due to the energy of the incident sunlight, and at this time, the holes (+) move toward the P-type semiconductor and the electrons (-) move toward the N-type semiconductor due to the electric field generated at the PN junction, so that a potential is generated, thereby generating electricity.

[0006] The present invention relates to an electronic device capable of simultaneously performing the functions of a light-emitting device and a light-receiving device, and aims to provide an electronic device capable of simultaneously performing two functions by controlling the function of a light-emitting device and the function of a light-receiving device through a switch module.

[0007] To achieve the above object, the present invention provides an electronic device comprising: a light-receiving element including a first active layer; a light-emitting element including a second active layer; and a switch for turning on or off at least one of the light-receiving element and the light-emitting element.

[0008] Furthermore, the present invention provides an electronic device in which the light-receiving element and the light-emitting element are connected to the switch, and the switch turns the light-emitting element off while turning the light-receiving element on, or turns the light-emitting element on while turning the light-receiving element off.

[0009] Furthermore, the present invention provides an electronic device in which the light-receiving element includes a first layer provided on one surface of the first active layer, a second layer provided on the other surface of the first active layer, the light-emitting element includes a third layer provided on one surface of the second active layer, and a fourth layer provided on the other surface of the second active layer, and the first layer and the third layer are formed as one identical layer.

[0010] Furthermore, the present invention provides an electronic device in which the first layer and the third layer include gallium nitride doped with P type (P-GaN), the second layer includes indium nitride doped with N type (N-InN), and the fourth layer includes gallium nitride doped with N type (N-GaN), and the second layer is provided so as to be adjacent to the first active layer of the light-receiving element compared to the fourth layer.

[0011] Furthermore, the present invention provides an electronic device comprising: a first semiconductor layer containing an N-type doped nitride; a second semiconductor layer provided on the first semiconductor layer and containing a P-type doped nitride; a third semiconductor layer provided on the second semiconductor layer and containing an N-type doped nitride; and a plurality of active layers provided between the second semiconductor layer and the third semiconductor layer, wherein the plurality of active layers include a first active layer containing indium gallium nitride and configured to receive light and a second active layer containing indium gallium nitride and configured to emit light.

[0012] Furthermore, the present invention provides an electronic device further comprising a switch for switching at least one of the first active layer and the second active layer to an on or off state.

[0013] Furthermore, the present invention provides an electronic device in which the first active layer is adjacent to the first semiconductor layer rather than the second active layer.

[0014] Furthermore, the present invention comprises a first active layer and a second active layer including a multi-quantum well, and the first active layer comprises indium gallium nitride (In x Ga 1-x The first layer containing N) and indium gallium nitride (In y Ga 1-y N) comprising a second layer, wherein x and y are 0 <y<x<1의 관계를 만족시키는 전자 소자를 제공한다.

[0015] Furthermore, the present invention provides an electronic device in which the first layer is provided adjacent to the first semiconductor layer, and the second layer is provided adjacent to the second semiconductor layer.

[0016] Furthermore, the present invention provides an electronic device in which the first active layer further comprises a third layer containing indium nitride (InN) provided between the first layer and the first semiconductor layer, and a fourth layer containing gallium nitride (GaN) provided between the second layer and the second semiconductor layer.

[0017] Furthermore, the present invention provides a semiconductor device in which the first semiconductor layer includes gallium nitride (N-GaN) doped with N type, and the second semiconductor layer includes gallium nitride (P-GaN) doped with P type,

[0018] The third semiconductor layer provides an electronic device including indium nitride (N-InN) doped with N type.

[0019] Furthermore, the present invention comprises a multi-quantum well, wherein the first active layer and the second active layer include a multi-layer including an aluminum gallium nitride (AlGaN) layer and a gallium nitride (GaN) layer alternately stacked, a multi-layer including an indium gallium nitride (InGaN) layer and a gallium nitride (GaN) layer alternately stacked, and an indium gallium nitride (In) layer. z Ga 1-z A layer comprising at least one of a single layer of indium gallium nitride (In) and a single layer of gallium arsenide (GaAs), wherein the indium gallium nitride (In) z Ga 1-z A single layer of N) provides an electronic device having z greater than or equal to 0.3 and less than 1.

[0020] Furthermore, the present invention provides an electronic device comprising: a first electrode provided under the first semiconductor layer and supplying charges to the second active layer; a second electrode provided on the second semiconductor layer and supplying charges to the second active layer; a third electrode provided on the first semiconductor layer and receiving charges from the first active layer; and a fourth electrode provided on the second semiconductor layer and receiving charges from the first active layer.

[0021] Furthermore, the present invention provides an electronic device including a first switch for switching the formation of an electric field between the first electrode and the second electrode; and a second switch for switching the formation of an electric field between the third electrode and the fourth electrode, wherein the first switch and the second switch are controlled to form one of an electric field between the first electrode and the second electrode and an electric field between the third electrode and the fourth electrode.

[0022] Furthermore, the present invention provides a display device including a substrate; an electronic element according to any one of claims 1 to 14 provided on the substrate; and a circuit element electrically connected to the electronic element.

[0023] Furthermore, the present invention provides a display device further comprising: a sealing layer provided on the electronic element; and a counter substrate provided on the sealing layer.

[0024] According to the present invention as described above, the following effects are achieved.

[0025] According to one embodiment of the present invention, an electronic device including both a light-receiving element and a light-emitting element can be implemented.

[0026] According to one embodiment of the present invention, by selectively applying a first mode for performing the function of a light-emitting element and a second mode for performing the function of a light-receiving element by a switching module, an electronic device can be implemented in which a short-circuit problem that occurs when a light-emitting element and a light-receiving element function simultaneously does not occur.

[0027] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0028] FIG. 1 is a cross-sectional view of an electronic device according to one embodiment of the present invention.

[0029] Fig. 2 is a cross-sectional view of a first active layer provided in an electronic device according to one embodiment of the present invention. In this case, Fig. 2 is a cross-sectional view of a in Fig. 1.

[0030] FIG. 3 is a graph showing the energy level of a first active layer provided in an electronic device according to one embodiment of the present invention.

[0031] FIG. 4 is a schematic cross-sectional view of a first mode of an electronic device according to one embodiment of the present invention.

[0032] FIG. 5 is a schematic cross-sectional view of a second mode of an electronic device according to one embodiment of the present invention.

[0033] Figure 6 is a cross-sectional view of an electronic device according to another embodiment of the present invention.

[0034] FIG. 7 is a schematic cross-sectional view of a display device including an electronic element according to one embodiment of the present invention.

[0035] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0036] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative and are not limited to the matters illustrated in the drawings. Like reference numerals refer to like components throughout the specification. In addition, in describing the present invention, if a detailed description of a related known technology is judged to unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When the terms “includes,” “has,” and “consists of” are used in this specification, other parts may be added unless “only” is used. When a component is expressed in the singular, it includes a case where the plural is included unless there is a specifically explicit description.

[0037] When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

[0038] When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on top of', 'upper part of', 'lower part of', 'next to', etc., one or more other parts may be located between the two parts, unless 'right away' or 'directly' is used.

[0039] When describing a temporal relationship, for example, when the temporal continuity is described as 'after', 'following', 'next to', 'before', etc., it can also include cases where it is not continuous, as long as 'right away' or 'directly' is not used.

[0040] While terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0041] The individual features of the various embodiments of the present invention can be partially or wholly combined or combined with each other, and various technical linkages and operations are possible, and each embodiment can be implemented independently of each other or implemented together in a related relationship.

[0042] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

[0043] FIG. 1 is a cross-sectional view of an electronic device according to one embodiment of the present invention.

[0044] As can be seen in FIG. 1, an electronic device according to one embodiment of the present invention comprises a substrate (100), a first semiconductor layer (120), a second semiconductor layer (130), a third semiconductor layer (140), a first active layer (210), a second active layer (220), a first electrode (310), a second electrode (320), a third electrode (330), and a fourth electrode (340).

[0045] The substrate (100) may be, but is not limited to, a flexible plastic or silicon (Si) wafer. The substrate (100) may support a plurality of semiconductor layers and an active layer provided on the substrate (100). Meanwhile, when the semiconductor layers (120, 130, 140) are formed of, for example, a wafer, the substrate (100) may be omitted.

[0046] The first semiconductor layer (110) may be formed on the substrate (100). The first semiconductor layer (110) may be doped with a dopant of the first polarity. In this case, the first polarity means P type or N type.

[0047] According to one embodiment of the present invention, the first semiconductor layer (110) may include a gallium nitride (N-Gallium Nitride; N-GaN) layer doped with an N-type dopant.

[0048] The third semiconductor layer (130) may be formed on the first semiconductor layer (110) and may be formed under the second semiconductor layer (120). The third semiconductor layer (130) may be doped with a dopant having the first polarity. In this case, the first polarity means P type or N type. Therefore, the third semiconductor layer (130) may be doped with a dopant having the same polarity as the first semiconductor layer (110). The third semiconductor layer (130) may be doped with, for example, an N type dopant.

[0049] According to one embodiment of the present invention, the third semiconductor layer (130) may include an indium nitride (N-InN) layer doped with an N-type dopant.

[0050] According to one embodiment of the present invention, the first semiconductor layer (110) includes a gallium nitride (N-GaN) layer doped with an N-type dopant, and the third semiconductor layer (130) provided on the first semiconductor layer (110) includes an indium nitride (N-InN) layer doped with an N-type dopant, so that charges generated from the first active layer (210) can move through the first semiconductor layer (110) and the third semiconductor layer (130), and the charges can move to the second active layer (220) to emit light.

[0051] The second semiconductor layer (120) may be formed on the first semiconductor layer (110) and the third semiconductor layer (130). Specifically, the second semiconductor layer (120) is formed on the second active layer (220).

[0052] The second semiconductor layer (120) may be doped with a dopant having a different polarity from the first semiconductor layer (110). Therefore, when the first semiconductor layer (110) is doped with, for example, an N-type dopant, the second semiconductor layer (120) may be doped with, for example, a P-type dopant.

[0053] According to one embodiment of the present invention, the second semiconductor layer (120) may be formed by including gallium nitride (P-GaN) doped with a P-type dopant.

[0054] The first active layer (210) is formed on the first semiconductor layer (110) and the third semiconductor layer (130). Specifically, the first active layer (210) is formed on the third semiconductor layer (130). According to one embodiment of the present invention, the first active layer (210) may be provided to be relatively closer to the first semiconductor layer (110) and the third semiconductor layer (130) than to the second active layer (220). By forming in this manner, the efficiency of generating charges by receiving light in the first active layer (210) may increase.

[0055] The first active layer (210) can receive light and generate charges, for example, holes or electrons. Charges generated from the first active layer (210) can move through the second electrode (320) along the third semiconductor layer (130) or move through the fourth electrode (340) along the second active layer (220) and the second semiconductor layer (120).

[0056] The first active layer (210) may be formed by including a multi-quantum well (MQW). Specifically, the first active layer (210) may be formed by including one or more semiconductor layers including a multi-quantum well (MQW) structure, and for example, the first active layer (210) may be formed by including a multi-layer structure of a material containing indium (In), gallium (Ga), and nitrogen (N), thereby converting light of various wavelengths into charges. This will be specifically examined with reference to FIGS. 2 and 3 below.

[0057] The second active layer (220) is formed on the first active layer (210) and may be provided below the second semiconductor layer (120).

[0058] The second active layer (220) can be used for recombination of charges, for example, holes or electrons, that have moved from the first electrode (310) and the third electrode (330). Accordingly, holes and electrons recombine in the second active layer (220) to form excitons, and light corresponding to the energy difference emitted when the excitons in the excited state drop to the ground state is emitted.

[0059] The second active layer (220) may be formed by including a multi-quantum well (MQW). Specifically, the second active layer (220) may be formed by including one or more semiconductor layers including a multi-quantum well (MQW) structure, for example, the second active layer (220) may be formed by including a multi-layer in which aluminum gallium nitride (AlGaN) and gallium nitride (GaN) are alternately stacked, a multi-layer indium gallium nitride (InGaN) and gallium nitride (GaN) are alternately stacked, and indium gallium nitride (In z Ga 1-z It can be formed by including one of a multilayer of N) and a multilayer of gallium arsenide (GaAs).

[0060] In this case, the second active layer (220) is, for example, indium gallium nitride (In z Ga 1-z In the case where it is formed by including N), z may be 0.3 or more and less than 1. By forming in this way, the indium gallium nitride (In z Ga 1-z The second active layer (220) including N) can emit red (R) light to the outside.

[0061] The first electrode (310) may be formed between the substrate (100) and the first semiconductor layer (110). The first electrode (310) may be formed under the first semiconductor layer (110). Meanwhile, when the substrate (100) is omitted, the first electrode (310) may be pattern-formed in a portion of the lower surface of the first semiconductor layer (110).

[0062] The first electrode (310) may function as, for example, a cathode. When the first electrode (310) functions as a cathode, current may sequentially move from the first electrode (310) through the first semiconductor layer (110), the third semiconductor layer (130), and the first active layer (210), and then to the second active layer (220).

[0063] The second electrode (320) may be formed on the upper surface of the third semiconductor layer (130). Meanwhile, in FIG. 1, only the second electrode (320) formed on the upper surface of the third semiconductor layer (130) is illustrated, but the present invention is not limited thereto, and the second electrode (320) may be formed on the side surface of the third semiconductor layer (130).

[0064] The second electrode (320) may function as the same pole as the first electrode (310). Accordingly, the second electrode (320) may function as, for example, a cathode. When the second electrode (320) functions as a cathode, charges formed by the first active layer (210), for example, electrons, may move to the second electrode (320) along the third semiconductor layer (130).

[0065] The third electrode (330) and the fourth electrode (340) can be formed on the second semiconductor layer (120).

[0066] The third electrode (330) and the fourth electrode (340) may function as poles different from those of the first electrode (310) and the second electrode (320). For example, the third electrode (330) and the fourth electrode (340) may each function as an anode.

[0067] In this case, the third electrode (330) and the fourth electrode (340) perform different roles. Specifically, the third electrode (330) performs a role of supplying charges, for example, holes, to the second active layer (220), and the fourth electrode (340) performs a role of receiving charges, for example, holes, generated in the first active layer (210).

[0068] According to one embodiment of the present invention, by forming an electric field at the first electrode (310) and the third electrode (330), the first electrode (310) and the third electrode (330) serve to supply holes and electrons to the second active layer (220), and by forming an electric field at the second electrode (320) and the fourth electrode (340), the second electrode (320) and the fourth electrode (340) can receive holes and electrons formed from the first active layer (210).

[0069] Fig. 2 is a cross-sectional view of a first active layer provided in an electronic device according to one embodiment of the present invention. In this case, Fig. 2 is a cross-sectional view of a in Fig. 1. In addition, Fig. 3 is a graph showing the energy levels of the first active layer provided in an electronic device according to one embodiment of the present invention.

[0070] According to one embodiment of the present invention, the first active layer (210) includes a first layer (210a), a second layer (210b), a third layer (210c), a fourth layer (210d), and a fifth layer (210e). In this case, the first layer (210a) to the fifth layer (210e) may include at least one of indium (In) and gallium (Ga) and nitrogen (N).

[0071] First, as can be seen in FIG. 2, the first layer (210a) can be provided at the lowest level of the first active layer (210). Therefore, as can be seen in FIG. 1, the first layer (210a) can be formed on the upper surface of the third semiconductor layer (130).

[0072] The first layer (210a) may be formed of indium nitride (InN). According to one embodiment of the present invention, the first layer (210a) is formed of intrinsic indium nitride (i-InN), so that charges, for example, electrons, formed by receiving light in the first active layer (210) can be transferred to the third semiconductor layer (130).

[0073] The fifth layer (210e) may be provided at the uppermost level of the first active layer (210). Therefore, as can be seen in FIG. 1, the fifth layer (210e) may be provided below the second active layer (220). Furthermore, the fifth layer (210e) is formed on the fourth layer (210d).

[0074] The fifth layer (210e) may be formed of gallium nitride (GaN). According to one embodiment of the present invention, the fifth layer (210e) is formed of intrinsic gallium nitride (i-GaN), thereby allowing charges, for example, holes, formed by receiving light in the first active layer (210) to be transferred to the second active layer (220) and the second semiconductor layer (120).

[0075] The second layer (210b) to the fourth layer (210d) may be formed between the first layer (210a) and the fifth layer (210e). In this case, the second layer (210b) to the fourth layer (210d) may include indium (In), gallium (Ga), and nitrogen (N), and the ratio of gallium (Ga) to indium (In) may gradually increase from the second layer (210b) to the fourth layer (210d). In this case, the ratio of gallium (Ga) to indium (In) may be defined as the ratio of the relative number of atoms. By forming in this manner, a step-shaped energy level graph, as shown in FIG. 3, may be obtained.

[0076] According to one embodiment of the present invention, as can be seen in FIG. 3, as the ratio of gallium (Ga) to indium (In) gradually increases within the first active layer (210), the first active layer (210) can receive light having a wavelength corresponding to energy from approximately 1.5 eV to 2.8 eV to form charges. Therefore, by receiving light having a wide range of wavelengths, charges can be efficiently produced in the first active layer (210). That is, when an electronic device according to one embodiment of the present invention is used as a light-receiving device, for example, a solar cell, the performance of a high-efficiency light-receiving device can be secured.

[0077] Referring again to FIG. 2, the second layer (210b) may be formed on the first layer (210a). The second layer (210b) may include indium (In), gallium (Ga), and nitrogen (N). In this case, the second layer (210b) may be formed by combining indium (In) and gallium (Ga) at a certain ratio to include indium gallium nitride (InGaN), and in this case, the ratio of indium (In) and gallium (Ga) may be x:1-x. In this case, x is greater than 0 and less than 1. Therefore, the second layer (210b) may include In x Ga 1-x It consists of including N.

[0078] The second layer (210b) may be provided so as to be adjacent to the first semiconductor layer (110) and the third semiconductor layer (130). By being formed in this manner, charges moving through the second layer (210b) can be easily transferred to the third semiconductor layer (130).

[0079] The third layer (210c) may be formed on the second layer (210b). Meanwhile, although not specifically illustrated, the third layer (210c) may include indium (In), gallium (Ga), and nitrogen (N), and in this case, the ratio of gallium (Ga) to indium (In) may be higher than the ratio of gallium (Ga) to indium (In) in the second layer (210b). Furthermore, although FIG. 2 illustrates the third layer (210c) being formed as a single layer, it is not limited thereto, and the third layer (210c) may include multiple layers, and the ratio of gallium (Ga) to indium (In) may gradually increase as it goes from the second layer (210b) to the fourth layer (210d). For example, the third layer (210c) may include two layers that are sequentially stacked in a direction from the second layer (210b) to the fourth layer (210d), and the two layers may have an increasing ratio of gallium (Ga) to indium (In) in a direction from the second layer (210b) to the fourth layer (210d).

[0080] The fourth layer (210d) may be formed on the third layer (210c). The fourth layer (210d) may include indium (In), gallium (Ga), and nitrogen (N). In this case, the fourth layer (210d) may include indium (In) and gallium (Ga) at a certain ratio, and may include indium gallium nitride (InGaN). In this case, the ratio of indium (In) and gallium (Ga) may be y:1-y. In this case, y is greater than 0 and less than 1, and greater than x of the second layer (210b). Therefore, the fourth layer (210d) may include In y Ga 1-yIt is made up of including N. According to one embodiment of the present invention, the ratio of gallium (Ga) to indium (In) of the fourth layer (210d) is greater than the ratio of gallium (Ga) to indium (In) of the third layer (210c).

[0081] The fourth layer (210d) may be provided so as to be adjacent to the second semiconductor layer (120). By being formed in this manner, charges moving through the fourth layer (210d) can be easily transferred to the second semiconductor layer (120).

[0082] Fig. 4 is a schematic cross-sectional diagram illustrating a first mode of an electronic device according to one embodiment of the present invention. Meanwhile, the embodiment of Fig. 4 is identical to the embodiment of Fig. 1 except for the configuration of the switch, and therefore, the following description will focus on the different configuration.

[0083] As can be seen in FIG. 4, an electronic device according to one embodiment of the present invention comprises a substrate (100), a first semiconductor layer (120), a second semiconductor layer (130), a third semiconductor layer (140), a first active layer (210), a second active layer (220), a first electrode (310), a second electrode (320), a third electrode (330), a fourth electrode (340), and a switch module (400).

[0084] According to one embodiment of the present invention, it further comprises a switch module (400) that controls the formation of electric fields of the first electrode (310) to the fourth electrode (340). By controlling the driving state (On) - non-driving state (Off) of the switch module (400), it is possible to select a first mode for driving the electronic device according to one embodiment of the present invention as a light-emitting device or a second mode for driving it as a light-receiving device.

[0085] The above switch module (400) comprises a first switch (400a), a second switch (400b), a first wiring (420a), a second wiring (420b), a third wiring (420c), and a fourth wiring (420d).

[0086] The first switch (400a) can be electrically connected to the first electrode (310) and the third electrode (330) through the first wiring (420a) and the third wiring (420c). Specifically, the first switch (400a) can be electrically connected to the first electrode (310) through the first wiring (420a) and can be electrically connected to the third electrode (330) through the third wiring (420c).

[0087] Meanwhile, although not shown, the first electrode (310) and the third electrode (330) may not be connected to the same circuit in the first switch (410a) but may be connected to separate circuits.

[0088] For example, a low voltage is applied to the first electrode (310), and for example, a high voltage is applied to the third electrode (330), so that an electric field is formed between the first electrode (310) and the third electrode (330) according to the operation of the first switch (410a). By forming it in this way, in the first mode of the electronic device according to one embodiment of the present invention, by operating the first switch (410a), the electronic device according to one embodiment of the present invention can be operated as a light-emitting device through the electric field formed between the first electrode (310) and the third electrode (330) and the second active layer (220).

[0089] Specifically, an electric field is formed at the first electrode (310) and the third electrode (330) by the first switch (410a), and electrons and holes that have moved from the first electrode (310) and the third electrode (330) to the second active layer (220) can recombine to emit light. Specifically, electrons can move through the first electrode (310), and holes can move through the third electrode (330), but the present invention is not limited thereto.

[0090] The second switch (400b) can be electrically connected to the second electrode (320) and the fourth electrode (340) through the second wiring (420b) and the fourth wiring (420d). Specifically, the second switch (400b) can be electrically connected to the second electrode (320) through the second wiring (420b), and can be electrically connected to the fourth electrode (340) through the fourth wiring (420d).

[0091] Meanwhile, although not shown, the second electrode (320) and the fourth electrode (340) may not be connected to the same circuit in the second switch (410b) but may be connected to separate circuits.

[0092] In the first mode of the electronic device according to one embodiment of the present invention, the second switch (400b) may not be switched and may be in a non-driven state (Off).

[0093] In the first mode, since the second switch (410b) according to one embodiment of the present invention is in a non-driven (off) state, no electric field is formed at the second electrode (320) and the fourth electrode (340). Accordingly, the first electrode (310) or the third electrode (330) can be prevented from being short-circuited with the second electrode (320) or the fourth electrode (340).

[0094] Fig. 5 is a schematic cross-sectional diagram illustrating a second mode of an electronic device according to one embodiment of the present invention. Meanwhile, the embodiment of Fig. 5 is identical to the embodiment of Fig. 4 except for the configuration of the switch, and therefore, the following description will focus on the different configuration.

[0095] As can be seen in FIG. 5, in the second mode of the electronic device according to one embodiment of the present invention, the first switch (410a) is not switched and is in a non-driven (Off) state, and the second switch (410b) is switched and is in a driven (On) state.

[0096] For example, a low voltage is applied to the second electrode (320), and for example, a high voltage is applied to the fourth electrode (340), so that an electric field is formed between the second electrode (320) and the fourth electrode (340) according to the operation of the second switch (410b). By forming it in this way, in the second mode of the electronic device according to one embodiment of the present invention, by operating the second switch (410b), the electronic device according to one embodiment of the present invention can be operated as a light-receiving device through the electric field formed between the second electrode (320) and the fourth electrode (340) and the first active layer (210).

[0097] Specifically, an electric field is formed at the second electrode (320) and the fourth electrode (340) by the second switch (410b), and electrons and holes formed by receiving light in the first active layer (210) can move along the second electrode (320) and the fourth electrode (340). Specifically, electrons can move through the second electrode (320), and holes can move through the fourth electrode (340), but are not limited thereto.

[0098] Meanwhile, in the second mode, since the first switch (410a) according to one embodiment of the present invention is in a non-driven (off) state, no electric field is formed at the first electrode (310) and the third electrode (330). Accordingly, the first electrode (310) or the third electrode (330) can be prevented from being short-circuited with the second electrode (320) or the fourth electrode (340).

[0099] Fig. 6 is a cross-sectional view of an electronic device according to another embodiment of the present invention. Meanwhile, the embodiment of Fig. 6 is identical to the embodiment of Fig. 1 except for the order of the first active layer and the second active layer, and therefore, the following description will focus on the different configuration.

[0100] As can be seen in FIG. 6, an electronic device according to another embodiment of the present invention comprises a substrate (100), a first semiconductor layer (120), a second semiconductor layer (130), a third semiconductor layer (140), a first active layer (210), a second active layer (220), a first electrode (310), a second electrode (320), a third electrode (330), and a fourth electrode (340).

[0101] According to another embodiment of the present invention, unlike FIG. 1, the order of the first active layer (210) and the second active layer (220) is reversed. Specifically, the second active layer (220) is formed on the third semiconductor layer (130), the first active layer (210) is formed on the second active layer (220), and the second semiconductor layer (120) is formed on the first active layer (210).

[0102] Accordingly, when the electronic device according to another embodiment of the present invention functions as a light-emitting device (first mode), electrons transferred from the first electrode (310) sequentially pass through the first semiconductor layer (110) and the third semiconductor layer (130) to reach the second active layer (220), and holes transferred from the third electrode (330) sequentially pass through the second semiconductor layer (120) and the first active layer (210) to reach the second active layer (220). In this case, the content of the holes and electrons reaching the second active layer (220) recombining to emit light is the same as that described in FIG. 1, so a repeated description thereof will be omitted.

[0103] Furthermore, when the electronic device according to another embodiment of the present invention functions as a light-receiving device (second mode), electrons formed by receiving light in the first active layer (210) sequentially pass through the second active layer (220) and the third semiconductor layer (130) to reach the second electrode (320), and holes formed by receiving light in the first active layer (210) pass through the second semiconductor layer (120) to reach the fourth electrode (340).

[0104] Meanwhile, although not specifically illustrated in FIG. 6, in another embodiment of the present invention, switching between the first mode and the second mode can be performed through the switching module according to FIG. 4 and FIG. 5 (see 400 of FIG. 4 and FIG. 5).

[0105] FIG. 7 is a schematic cross-sectional view of a display device including an electronic element according to one embodiment of the present invention.

[0106] As can be seen in FIG. 7, a display device according to one embodiment of the present invention comprises a substrate (100), a circuit element layer (10), an electronic element layer (20), an encapsulation layer (30), and a counter substrate (500).

[0107] The circuit element layer (10) is provided on the substrate (100). The circuit element layer (10) includes various electronic elements such as a plurality of thin film transistors (TFTs) or a plurality of transistors, so that when the electronic element layer (20) functions as a light-emitting element, it can provide an image or picture to the outside.

[0108] The above electronic element layer (20) may be provided on the circuit element layer (10). The electronic element layer (20) may be electrically connected to the circuit element layer (10) and may function as a light-emitting element that provides an image or video according to a signal of the circuit element layer (10), or may function as a light-receiving element that receives light and converts it into electricity. The electronic element layer (20) is formed by including an electronic element according to the above-described embodiment. For example, the electronic element layer (20) may include a first semiconductor layer (see 120 in FIG. 1), a second semiconductor layer (see 130 in FIG. 1), a third semiconductor layer (see 140 in FIG. 1), a first active layer (see 210 in FIG. 1), a second active layer (see 220 in FIG. 1), a first electrode (see 310 in FIG. 1), a second electrode (see 320 in FIG. 1), a third electrode (see 330 in FIG. 1), and a fourth electrode (see 340 in FIG. 1). As another example, the electronic element layer (20) may additionally include a switch module (see 400 in FIG. 4) that controls the formation of electric fields of the first electrode (see 310 in FIG. 1), the second electrode (see 320 in FIG. 1), the third electrode (see 330 in FIG. 1), and the fourth electrode (see 340 in FIG. 1), as in FIG. 4 described above.

[0109] The above encapsulation layer (30) may be provided on the substrate (100), the circuit element layer (10), and the electronic element layer (20). Specifically, the encapsulation layer (30) is provided to cover the substrate (100), the circuit element layer (10), and the electronic element layer (20), thereby preventing moisture or air from entering from the outside of the display device according to one embodiment of the present invention, thereby deteriorating the performance of the display device.

[0110] The opposing substrate (500) may be provided on the sealing layer (30). The opposing substrate (500) is formed on the sealing layer (30) so as to face the substrate (100). The opposing substrate (500) may be a flexible plastic, but is not limited thereto.

[0111] Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be implemented without departing from the technical spirit of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain it, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

Claims

1. A light-receiving element including a first active layer; A light-emitting element comprising a second active layer; and An electronic device comprising a switch that turns on or off at least one of the light-receiving element and the light-emitting element.

2. In paragraph 1, The above light-receiving element and the above light-emitting element are connected to the switch, The switch is an electronic device that turns the light-emitting element off while turning the light-receiving element on, or turns the light-emitting element on while turning the light-receiving element off.

3. In paragraph 1, The light-receiving element includes a first layer provided on one surface of the first active layer, and a second layer provided on the other surface of the first active layer, The light emitting element includes a third layer provided on one surface of the second active layer, and a fourth layer provided on the other surface of the second active layer. An electronic device wherein the first layer and the third layer are formed of one identical layer.

4. In paragraph 3, The first layer and the third layer comprise gallium nitride (P-GaN) doped with P type, The second layer comprises N-type doped indium nitride (N-InN), The fourth layer comprises gallium nitride (N-GaN) doped with N type, An electronic device in which the second layer is provided adjacent to the first active layer of the light-receiving element compared to the fourth layer.

5. A first semiconductor layer containing a nitride doped with N type; A second semiconductor layer provided on the first semiconductor layer and containing a nitride doped with P type; A third semiconductor layer provided on the second semiconductor layer and containing a nitride doped with N type; and Including a plurality of active layers provided between the second semiconductor layer and the third semiconductor layer, An electronic device comprising a first active layer containing indium gallium nitride and configured to receive light and a second active layer containing indium gallium nitride and configured to emit light.

6. In paragraph 5, An electronic device further comprising a switch for switching at least one of the first active layer and the second active layer to an on or off state.

7. In paragraph 5, An electronic device wherein the first active layer is adjacent to the first semiconductor layer rather than the second active layer.

8. In paragraph 5, The first active layer and the second active layer include multiple quantum wells, The above first active layer is indium gallium nitride (In x Ga 1-x The first layer containing N) and indium gallium nitride (In y Ga 1-y A second layer containing N), The above x and y are 0 <y<x<1의 관계를 만족시키는 전자 소자.

9. In paragraph 8, The above first layer is provided to be adjacent to the above first semiconductor layer, An electronic device in which the second layer is provided adjacent to the second semiconductor layer.

10. In paragraph 8, An electronic device comprising: the first active layer further comprising a third layer containing indium nitride (InN) provided between the first layer and the first semiconductor layer; and a fourth layer containing gallium nitride (GaN) provided between the second layer and the second semiconductor layer.

11. In paragraph 5, The first semiconductor layer comprises gallium nitride (N-GaN) doped with N type, The second semiconductor layer comprises gallium nitride (P-GaN) doped with P type, An electronic device in which the third semiconductor layer comprises indium nitride (N-InN) doped with N type.

12. In paragraph 5, The first active layer and the second active layer include multiple quantum wells, The second active layer is a multilayer including alternately stacked aluminum gallium nitride (AlGaN) layers and gallium nitride (GaN) layers, a multilayer including alternately stacked indium gallium nitride (InGaN) layers and gallium nitride (GaN) layers, and indium gallium nitride (In z Ga 1-z N), and at least one layer of gallium arsenide (GaAs), The above indium gallium nitride (In z Ga 1-z A single layer of N) is an electronic element in which z is greater than or equal to 0.3 and less than 1.

13. In paragraph 5, A first electrode provided under the first semiconductor layer and supplying charge to the second active layer; A second electrode provided on the second semiconductor layer and supplying charge to the second active layer; A third electrode provided on the first semiconductor layer and receiving charge from the first active layer; and An electronic device comprising a fourth electrode provided on the second semiconductor layer and receiving charge from the first active layer.

14. In paragraph 13, A first switch for switching the formation of an electric field between the first electrode and the second electrode; and A second switch is included for switching the formation of an electric field between the third electrode and the fourth electrode, An electronic device in which the first switch and the second switch are controlled to form one of an electric field between the first electrode and the second electrode and an electric field between the third electrode and the fourth electrode.

15. Substrate; Electronic components provided on the substrate; and Includes a circuit element electrically connected to the above electronic element, The above electronic components, i) a light-receiving element including a first active layer, a light-emitting element including a second active layer, and a switch for turning on or off at least one of the light-receiving element and the light-emitting element, or, ii) A display device comprising a first semiconductor layer containing a nitride doped with N type, a second semiconductor layer provided on the first semiconductor layer and containing a nitride doped with P type, a third semiconductor layer provided on the second semiconductor layer and containing a nitride doped with N type, and a plurality of active layers provided between the second semiconductor layer and the third semiconductor layer, wherein the plurality of active layers include a first active layer containing indium gallium nitride and receiving light and a second active layer containing indium gallium nitride and emitting light.

16. In paragraph 15, A sealing layer provided on the electronic device; and A display device further comprising a counter substrate provided on the above-mentioned sealing layer.

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