Manufacturing method for perovskite solar cell and perovskite solar cell

Abstract

The present application relates to the technical field of solar cell manufacturing. Specifically, the present application relates to a manufacturing method for a perovskite solar cell and a perovskite solar cell. The formation of a perovskite layer of the perovskite solar cell comprises the following steps: forming an inorganic precursor solution and further forming an inorganic precursor film layer; the solvent of the inorganic precursor solution comprising a mixture of DMF and DMSO; the inorganic precursor materials forming the inorganic precursor solution comprising at least CsX and PbX2; forming an organic precursor solution, applying the organic precursor solution onto a surface of the inorganic precursor film layer, and mixing with the inorganic precursor film layer to form a mixed precursor solution layer; the organic precursor materials of the organic precursor solution comprising at least two of FAX and MAX; and performing diffusion annealing to convert the mixed precursor solution layer into a perovskite layer. The manufacturing method for the perovskite solar cell provided in the present application can manufacture a perovskite solar cell having a wide-bandgap perovskite layer by means of a dual-solution intermixing method.

Description

Method for manufacturing perovskite solar cell and perovskite solar cell

[0001] Cross-reference to related applications

[0002] This application claims priority to Chinese Invention Patent Application No. CN 202411088386.6, filed on August 8, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the technical field of solar cell manufacturing. Specifically, it relates to a method for manufacturing perovskite solar cell and perovskite solar cell. BACKGROUND

[0004] Solar energy has the characteristics of being renewable and clean, and has abundant availability and cost-effectiveness. Using photovoltaic cells to convert solar energy into electrical energy is one of the most effective methods of use at present. It is worth noting that solar cells, especially those composed of polycrystalline silicon and monocrystalline silicon, have already had mature industrial technology. However, in recent years, due to the remarkable characteristics of perovskite solar cells, including high photoelectric conversion efficiency, adjustable band gap width, strong tolerance to impurities, lowest temperature coefficient, and simple preparation procedure, the scientific and industrial fields have seen a surge in attention to them. The efficiency of perovskite / crystalline silicon tandem solar cells has now reached an impressive 33.9%, exceeding the 26.8% of single-junction devices.

[0005] The formation of perovskite layer is of extremely important significance to achieve higher solar cell efficiency, especially when considering the formation of wide-bandgap perovskite for tandem solar cells. In the prior art, one of the methods for the formation of perovskite layer is the all-solution method (double-solution interdiffusion method). Among them, the double-solution diffusion method includes a layering method, which first forms an inorganic precursor film or template (the template refers to the structure including the substrate and the liquid film after the inorganic precursor solution is spread on the substrate to be formed), and then forms an organic film to mix the perovskite absorption layer. This method is challenging in controlling the carrier dynamics when forming a wide-bandgap perovskite layer, making it difficult to achieve the preparation of a perovskite layer with accurate band gap. Especially in the presence of larger halide ions such as bromide (Br), the perovskite layer uniformity is poor, and defects are easily generated, resulting in the band gap of the final product deviating from the designed value, making the photoelectric conversion performance of the final solar cell not ideal. Therefore, it is urgent to solve the application of this method to wide-bandgap perovskite layers. SUMMARY

[0006] Therefore, the present application provides a method for manufacturing perovskite solar cell and perovskite solar cell to solve the problem of difficulty in achieving accurate band gap in the preparation of wide-bandgap perovskite layer.

[0007] The application provides a method for manufacturing a perovskite solar cell, and formation of a perovskite layer of the perovskite solar cell, including the following steps: forming an inorganic precursor solution and further forming an inorganic precursor film layer; a solvent of the inorganic precursor solution includes a mixture of DMF and DMSO; inorganic precursor materials for forming the inorganic precursor solution at least include CsX and PbX2; X in CsX is Br or I, and X in PbX2 is I; forming an organic precursor solution, applying the organic precursor solution on a surface of the inorganic precursor film layer, and mixing the organic precursor solution with the inorganic precursor film layer to form a mixed precursor solution layer; organic precursor materials of the organic precursor solution at least include two of FAX and MAX, X in FAX is Br or I, and X in MAX is Cl; and diffusion annealing, so that the mixed precursor solution layer is converted into a perovskite layer.

[0008] Optionally, the step of forming the inorganic precursor solution and further forming the inorganic precursor film layer includes: mixing two or more inorganic precursor materials and adjusting the inorganic precursor solution to have a corresponding preset molar content; spreading the inorganic precursor solution on a substrate on which a film layer is to be formed; the spreading mode includes spin coating; and annealing the spread inorganic precursor solution to form the inorganic precursor film layer, the inorganic precursor film layer being a liquid film layer.

[0009] Optionally, in the inorganic precursor solution, the molar content of CsX and the molar content of PbX2 are different; the molar content of CsX is 0.10 mol / L to 0.20 mol / L; and the molar content of PbX2 is 1.00 mol / L to 2.00 mol / L; and in the mixed solvent of DMF and DMSO, the ratio of DMF to DMSO is DMF:DMSO=900:100 to 990:10.

[0010] Optionally, in the mixed solvent of DMF and DMSO, the ratio of DMF to DMSO is DMF:DMSO=950:50; and the difference between the molar content of CsX and the molar content of PbX2 is 0.1 mol / L.

[0011] Optionally, the step of forming the organic precursor solution, applying the organic precursor solution on the surface of the inorganic precursor film layer, and mixing the organic precursor solution with the inorganic precursor film layer to form the mixed precursor solution layer includes: adjusting at least one organic precursor material to have a corresponding preset molar content to form the organic precursor solution; a solvent of the organic precursor solution includes IPA; and spreading and mixing the organic precursor solution on the surface of the inorganic precursor film layer; the spreading mode includes spin coating.

[0012] Optionally, in the step of converting the mixed precursor solution layer into the perovskite layer by diffusion annealing, the annealing temperature is 100-200℃, the annealing time is 10-60min, and the ambient humidity is 20-60% relative humidity.

[0013] Optionally, the method for manufacturing the perovskite solar cell further comprises: providing a substrate layer; forming an i-type hydrogenated amorphous silicon layer, a P-type amorphous silicon doped layer, a first transparent electrode layer and a first metal electrode layer in sequence on one side surface of the substrate layer; forming an i-type hydrogenated amorphous silicon layer, an N-type amorphous silicon doped layer, a transparent conductive layer, a hole transport layer, a passivation layer, an electron transport layer, a second transparent conductive layer, a second metal electrode layer and an anti-reflection layer in sequence on the other side surface of the substrate layer; the perovskite layer is formed on the surface of the hole transport layer away from the substrate layer; and the passivation layer is formed on the surface of the perovskite layer away from the substrate layer.

[0014] The application also provides a perovskite solar cell, which is manufactured by the method for manufacturing the perovskite solar cell provided by the application; the perovskite solar cell comprises a single-junction perovskite cell device, a perovskite perovskite stacked cell or a perovskite heterojunction stacked cell and other stacked cells containing a perovskite cell part.

[0015] Optionally, the perovskite solar cell provided by the application comprises: a substrate layer; an i-type hydrogenated amorphous silicon layer, a P-type amorphous silicon doped layer, a first transparent electrode layer and a first metal electrode layer in sequence on one side of the substrate layer; an i-type hydrogenated amorphous silicon layer, an N-type amorphous silicon doped layer, a transparent conductive layer, a hole transport layer, a passivation layer, an electron transport layer, an electron transport layer modification layer, a second transparent conductive layer, a second metal electrode layer and an anti-reflection layer in sequence on the other side of the substrate layer; and the perovskite layer is located between the hole transport layer and the passivation layer.

[0016] Optionally, the first transparent conductive layer comprises ITO conductive glass or FTO conductive glass; the second transparent conductive layer comprises ITO conductive glass or FTO conductive glass; the material of the passivation layer comprises phenylethylamine iodide or ethylamine iodide; the material of the first metal electrode layer comprises one of Au, Ag, Cu, Cu-Al alloy and C; and the material of the second metal electrode layer comprises one of Au, Ag, Cu, Cu-Al alloy and C.

[0017] The technical solution of the application has the following advantages:

[0018] The method for manufacturing perovskite solar cells provided in the present application establishes a robust inorganic film template by combining CsX and PbX2 (particularly, PbI2) in DMF and DMSO, thereby forming a structured substrate that promotes uniform and ordered growth of the perovskite film. Subsequently, a two-solution diffusion method is utilized, in combination with organic salts such as FAX and / or MAX, to control the permeation of the template and promote the formation of the final perovskite layer. The method includes preparing separate precursor solutions with specific molar ratios of inorganic and organic components, thereby allowing fine control of the halide composition at the molecular level. The deposition process includes applying the organic precursor solution onto the pre-formed inorganic precursor film layer, promoting controlled inter-diffusion of the halides during annealing to achieve the desired halide distribution. By carefully managing the specific concentrations of different halides (I and Br) in the separate precursor solutions, this method provides a unique solution to the complexity of halide control in the two-step deposition method, ultimately producing high-quality perovskite layers with the desired wide bandgap characteristics. The method enhances the crystallization of the perovskite and addresses challenges related to carrier kinetics, particularly in the presence of larger halide ions such as bromide (Br), resulting in a more uniform and defect-free structure. Additionally, adjusting the proportion of organic precursors in the perovskite enables different optical bandgaps to be achieved within the perovskite layer.

[0019] The perovskite solar cells provided in the present application are manufactured using the method for manufacturing perovskite solar cells provided in the present application. The method establishes a robust inorganic film template by combining CsX and PbX2 (particularly, PbI2) in DMF and DMSO, thereby forming a structured substrate that promotes uniform and ordered growth of the perovskite film. Subsequently, a two-solution diffusion method is utilized, in combination with organic salts such as FAX and / or MAX, to control the permeation of the template and promote the formation of the final perovskite layer. The method includes preparing separate precursor solutions with specific molar ratios of inorganic and organic components, thereby allowing fine control of the halide composition at the molecular level. The deposition process includes applying the organic precursor solution onto the pre-formed inorganic precursor film layer, promoting controlled inter-diffusion of the halides during annealing to achieve the desired halide distribution. By carefully managing the specific concentrations of different halides (I and Br) in the separate precursor solutions, this method provides a unique solution to the complexity of halide control in the two-step deposition method, ultimately producing high-quality perovskite layers with the desired wide bandgap characteristics. The method enhances the crystallization of the perovskite and addresses challenges related to carrier kinetics, particularly in the presence of larger halide ions such as bromide (Br), resulting in a more uniform and defect-free structure. Additionally, adjusting the proportion of organic precursors in the perovskite enables different optical bandgaps to be achieved within the perovskite layer. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the specific embodiments or the prior art, the following will briefly introduce the drawings needed to be used in the specific embodiments or the prior art description. Obviously, the drawings described below are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0021] FIG. 1 is a flowchart of a method for manufacturing a perovskite solar cell according to an embodiment of the present application;

[0022] FIG. 2A and FIG. 2B are schematic diagrams of forming an organic precursor film layer in a method for manufacturing a perovskite solar cell according to an embodiment of the present application;

[0023] FIG. 3A and FIG. 3B are flowcharts of forming a mixed precursor film layer and converting it into a perovskite layer in a method for manufacturing a perovskite solar cell according to an embodiment of the present application;

[0024] FIG. 4 is a J-V characteristic curve of a perovskite solar cell according to an embodiment of the present application;

[0025] FIG. 5A is an electron microscope image of the interface between the perovskite layer and the underlying film layer of a perovskite solar cell according to another embodiment of the present application;

[0026] FIG. 5B is a J-V characteristic curve of a perovskite solar cell according to another embodiment of the present application. DETAILED DESCRIPTION

[0027] One of the main challenges faced by the two-step deposition method of perovskite formation is the precise control of halide composition, especially when dealing with multiple halides such as I and Br. The mixture of these halides in the second precursor solution can make it difficult to achieve the desired halide ratio in the perovskite structure. This challenge becomes even more apparent when aiming to manufacture perovskite for larger band gap cells, where specific halide concentrations play a crucial role in determining the optical properties.

[0028] To solve the problem of precise preparation of the band gap of the perovskite solar cell with a wide band gap perovskite layer that is difficult to prepare in the prior art, the present application provides a method for manufacturing a perovskite solar cell and a perovskite solar cell.

[0029] The technical solutions of the present application will be described clearly and completely in combination with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application. In the description of the present application, it should be noted that the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0030] Embodiment 1

[0031] Referring to FIG. 1, the present embodiment provides a method for manufacturing a perovskite solar cell, and the formation of a perovskite layer of the perovskite solar cell, comprising the following steps:

[0032] forming an inorganic precursor solution and further forming an inorganic precursor film layer; the solvent of the inorganic precursor solution comprises a mixture of DMF and DMSO; the inorganic precursor material for forming the inorganic precursor solution comprises at least CsX and PbX2; wherein X in CsX is Br or I, and X in PbX2 is I;

[0033] forming an organic precursor solution, applying the organic precursor solution on the surface of the inorganic precursor film layer, mixing the organic precursor solution with the inorganic precursor film layer to form a mixed precursor solution layer; the organic precursor material of the organic precursor solution comprises at least two of FAX and MAX, wherein X in FAX is Br or I, and X in MAX is Cl;

[0034] diffusion annealing, so that the inorganic precursor solution and the organic precursor solution are more fully mixed into a mixed precursor solution layer, and are converted into a perovskite layer.

[0035] The method for manufacturing perovskite solar cells provided by the embodiment establishes a solid inorganic film template by precisely combining CsX and PbX2 (especially PbI2) in DMF and DMSO, thereby forming a structured substrate to promote the uniform and orderly growth of the perovskite film. Subsequently, a double-solution diffusion method is used in combination with FAX and / or MAX organic salts to control the penetration of the template and promote the formation of the final perovskite layer. The method of the embodiment includes preparing separate precursor solutions of inorganic and organic components with a specific molar ratio, thereby allowing fine control of the halide composition at the molecular level. The deposition process includes applying the organic precursor solution to the pre-formed inorganic precursor film layer, and promoting the controlled interdiffusion of halides during the annealing process to achieve the desired halide distribution. By carefully managing the specific concentrations of different halides (I and Br) in the separate precursor solutions, this method provides a unique solution to the complexity of halide control in the two-step deposition method, ultimately producing a high-quality perovskite layer with the desired wide bandgap characteristics. The method enhances the crystallization of the perovskite and addresses the challenges related to carrier kinetics, especially in the presence of larger halide ions such as bromide (Br), resulting in a more uniform and less defect-prone structure. In addition, adjusting the proportion of organic precursors in the perovskite enables different optical bandgaps to be achieved within the perovskite layer.

[0036] Further, the steps of forming the inorganic precursor solution and further forming the inorganic precursor film layer include: mixing two or more inorganic precursor materials and adjusting the inorganic precursor solution to form an inorganic precursor solution with a corresponding preset molar content; spreading the inorganic precursor solution on the substrate on which the film layer is to be formed; the spreading method includes spin coating; annealing the spread inorganic precursor solution to form an inorganic precursor film layer, and the inorganic precursor film layer is a liquid film layer.

[0037] Further, the molar content of CsX and the molar content of PbX2 in the inorganic precursor solution are different. The molar content of CsX is 0.10 mol / L to 0.20 mol / L; the molar content of PbX2 is 1.00 mol / L to 2.00 mol / L; and the ratio of DMF to DMSO in the mixed solvent of DMF and DMSO is DMF:DMSO = 900:100 to 990:10. By precisely controlling the above-mentioned material range, the precise adjustment of the bandgap can be achieved.

[0038] Further, in different embodiments, the molar content of CsX and the molar content of PbX2 always differ by 0.1 mol / L. In this way, the components can be precisely controlled to achieve precise adjustment of the bandgap.

[0039] In an alternative embodiment, the ratio of DMF to DMSO in the mixed solvent of DMF and DMSO is

[0040] 950: 50 (parts), CsI or CsBr is 0.13 mol / L, and PbI2 is 1.3 mol / L. Such a proportion is conducive to subsequent precise adjustment of the band gap of the final perovskite layer by adjusting the proportion of organic precursor materials in the organic precursor solution.

[0041] Further, the step of forming an organic precursor solution, applying the organic precursor solution on the surface of the inorganic precursor film layer, and mixing the organic precursor solution with the inorganic precursor film layer to form a mixed precursor solution layer includes: preparing at least two organic precursor materials into an organic precursor solution according to a corresponding preset molar content; the solvent of the organic precursor solution includes IPA; spreading and mixing the organic precursor solution on the surface of the inorganic precursor film layer; the spreading method includes spin coating.

[0042] Further, in the organic precursor solution, the organic precursor materials include FAI, FABr, and MACl; in the organic precursor solution, the content of FAI is 0.12 mol / L-0.22 mol / L, the content of FABr is 0.16 mol / L-0.32 mol / L, and the content of MACl is 0.1 mol / L.

[0043] In an optional embodiment, the content of FAI is 0.12 mol / L, the content of FABr is 0.32 mol / L, and the content of MACl is 0.1 mol / L. In this case, in combination with the aforementioned proportion of inorganic precursors, a band gap of 1.67 eV can be obtained. In another optional embodiment, the content of FAI is 0.22 mol / L, the content of FABr is 0.16 mol / L, and the content of MACl is 0.1 mol / L. In this case, in combination with the aforementioned proportion of inorganic precursors, a band gap of 1.61 eV can be obtained.

[0044] Further, in the step of diffusion annealing to convert the mixed precursor solution layer into a perovskite layer: the annealing temperature is 100℃-200℃; the annealing time is 10min-60min; and the ambient humidity is 20%-60% relative humidity. Within such a range of conditions, it is conducive to the mixing and conversion of materials and the stable maintenance of the proportion. Lower than the lower limit or higher than the upper limit is not conducive to the precise control of the proportion.

[0045] Further, the method for manufacturing the perovskite solar cell further comprises: providing a substrate layer; forming, on one side surface of the substrate layer, an i-type hydrogenated amorphous silicon layer, a P-type amorphous silicon doped layer, a first transparent electrode layer, and a first metal electrode layer in sequence; forming, on the other side surface of the substrate layer, an i-type hydrogenated amorphous silicon layer, an N-type amorphous silicon doped layer, a transparent conductive layer, a hole transport layer, a passivation layer, an electron transport layer (in different embodiments, the electron transport layer can also be an electron transport layer modification layer), a second transparent conductive layer, a second metal electrode layer, and an anti-reflection layer in sequence; the perovskite layer is formed on the surface of the hole transport layer away from the substrate layer; and the passivation layer is formed on the surface of the perovskite layer away from the substrate layer.

[0046] Embodiment 2

[0047] Referring to FIGS. 2A-3B, the present embodiment is a specific implementation process for manufacturing a solar cell using the method of Embodiment 1 described above, as follows:

[0048] Nickel oxide was prepared as a hole transport layer on a clean ITO substrate and dispersed in deionized water at a concentration of 10-20 mg / mL, and was treated using a spin coating method. MeO2Paz was prepared at a concentration of 0.5 mg / mL-1.0 mg / mL and treated using a spin coating method. Raw materials based on cesium bromide, iodide, and lead iodide were prepared according to a 1.3 M molar ratio, dissolved in a mixed solvent of DMF:DMSO=950:50 (molar ratio), stirred for 5-10 minutes, and then spin-coated on the substrate and annealed at 70°C for one minute to prepare a conformal inorganic template. Raw materials based on formamidine, methylamine iodide, and bromide were prepared according to FAI: FABr:MACl at a molar ratio of 30:40, 7 mg was weighed and dissolved in isopropanol and stirred for 5-10 minutes, and then spin-coated on the inorganic template. The substrate was placed in a 30% RH environment and annealed at 150°C for 15 minutes to complete the perovskite conversion process. PCBM was selected as the electron transport layer in this experiment. Phenethylamine iodide (PEAI) was prepared at a concentration of 0.5 mg / mL-1.0 mg / mL using a spin coating method. PCBM was dissolved in a chlorobenzene solvent at a concentration of 20 mg / mL and treated using a spin coating method. Finally, in this experiment, silver was deposited as a back electrode on the electron transport layer at an evaporation rate of 1 A / s and a film thickness of 100 nm, and the photovoltaic performance parameters of the device are shown in FIG. 4 and Table 1 below.

[0049] Table 1 Photovoltaic performance parameters of perovskite solar cells

[0050] Embodiment 3

[0051] Referring to FIG. 1 and FIG. 5A, FIG. 5B, the embodiment is a specific implementation process for manufacturing a solar cell by applying the above-mentioned embodiment 1, as follows in detail:

[0052] First, a single crystal silicon substrate is provided, and on one surface, i-type hydrogenated amorphous silicon and P-type amorphous silicon doped layers are prepared in sequence using plasma enhanced chemical vapor deposition (PECVD), with a specific thickness of 5 nm for the i-type layer and a specific thickness of 5 nm to 30 nm for the P-type layer. Subsequently, a first transparent electrode layer with a thickness in the range of 50 nm to 500 nm is deposited using magnetron sputtering, vacuum evaporation or reactive plasma deposition technology.

[0053] Subsequently, a first metal electrode layer is applied on the surface of the first transparent electrode layer using methods such as magnetron sputtering, vacuum evaporation, reactive plasma deposition or printing, with a thickness in the range of 50 nm to 3000 nm. On the other surface of the silicon substrate, i-type hydrogenated amorphous silicon, N-type amorphous silicon doped layers and transparent conductive oxide (TCO) composite layers are prepared in sequence using PECVD and methods such as magnetron sputtering, vacuum evaporation, reactive plasma deposition or chemical vapor deposition, according to specific thickness requirements.

[0054] Subsequently, a hole transport layer with a thickness ranging from 0 to 50 nm is formed on the TCO composite layer, including UV ozone treatment and different layer technologies such as spin coating, magnetron sputtering and static spin coating.

[0055] The subsequent steps include preparing a perovskite absorption layer on the bottom hole transport layer, i.e. preparing raw materials based on cesium bromide, iodide and lead iodide according to 1.3 mol / L, dissolving them in a mixed solvent of DMF:DMSO=950:50 (molar ratio), stirring for 5 to 10 minutes, then spin coating on the HTL, and annealing at 70°C for one minute to prepare a conformal inorganic template. Prepare raw materials based on formamidine, methylamine iodide and bromide according to FAI: weigh 7 mg of FABr:MACl in a molar ratio of 30:40, dissolve in isopropanol and stir for 5 to 10 minutes, then spin coat on the inorganic template. Place the substrate in a 30% RH environment and anneal at 150°C for 15 minutes to complete the perovskite conversion process, then use gas deposition technology to deposit a top passivation layer with materials such as magnesium fluoride and lithium fluoride. Then prepare an electron transport layer or electron transport layer modification layer on top of the passivation layer, and outline the specific deposition methods and thicknesses.

[0056] Finally, a second transparent electrode layer and a second metal electrode layer are applied on the electron transport layer modification layer using magnetron sputtering and vapor deposition, respectively. An anti-reflective layer is deposited on the second metal electrode layer to complete the fabrication of the perovskite / crystalline silicon tandem solar cell. Each step in the process involves precise control of the deposition method, vacuum conditions, temperature, evaporation rate, and material composition to ensure successful construction of the solar cell structure.

[0057] Example 4

[0058] The present application also provides a perovskite solar cell, which is characterized in that it is manufactured using the manufacturing method of the perovskite solar cell provided by the present application; the perovskite solar cell includes a single-junction perovskite cell device, a perovskite perovskite tandem cell, or a perovskite heterojunction tandem cell, and other tandem cells containing a perovskite cell part.

[0059] The perovskite solar cell provided in the present embodiment is manufactured using the manufacturing method of the perovskite solar cell provided by the present application. By precisely combining CsX and PbX2 (particularly PbI2) in DMF and DMSO, a robust inorganic film template is established, thereby forming a structured substrate that promotes the uniform and ordered growth of the perovskite film. Subsequently, using a double-solution diffusion method, in combination with FAX and / or MAX organic salts, the penetration of the template can be controlled, promoting the formation of the final perovskite layer. This method includes the preparation of separate precursor solutions with specific molar ratios of inorganic and organic components, thereby allowing fine control of the halide composition at the molecular level. The deposition process involves the application of the organic precursor solution onto the pre-formed inorganic precursor film layer, promoting controlled inter-diffusion of halides during the annealing process to achieve the desired halide distribution. By carefully managing the specific concentrations of different halides (I and Br) in the separate precursor solutions, this method provides a unique solution to the complexity of halide control in the two-step deposition method, ultimately producing high-quality perovskite layers with the desired wide-bandgap characteristics. This method enhances the crystallization of the perovskite and addresses challenges related to carrier kinetics, particularly in the presence of larger halide ions such as bromide (Br), resulting in a more uniform and less defect-prone structure. Additionally, adjusting the proportion of organic precursors in the perovskite enables different optical bandgaps to be achieved within the perovskite layer.

[0060] Further, the perovskite solar cell provided by the application comprises: a substrate layer; an i-type hydrogenated amorphous silicon layer, a P-type amorphous silicon doped layer, a first transparent electrode layer and a first metal electrode layer which are sequentially stacked on one side of the substrate layer; an i-type hydrogenated amorphous silicon layer, an N-type amorphous silicon doped layer, a transparent conductive layer, a hole transport layer, a passivation layer, an electron transport layer, an electron transport layer modification layer, a second transparent conductive layer, a second metal electrode layer and an anti-reflection layer which are sequentially stacked on the other side of the substrate layer; and a perovskite layer located between the hole transport layer and the passivation layer.

[0061] Further, the first transparent conductive layer comprises ITO conductive glass or FTO conductive glass; the second transparent conductive layer comprises ITO conductive glass or FTO conductive glass; the material of the passivation layer comprises phenylethylamine iodide or ethylamine iodide; the material of the first metal electrode layer comprises one of Au, Ag, Cu, Cu-Al alloy and C; and the material of the second metal electrode layer comprises one of Au, Ag, Cu, Cu-Al alloy and C.

[0062] Obviously, the above embodiments are only examples for clearly illustrating the application, but not limitation on the embodiments. Based on the above description, other different forms of changes or variations can be made by those skilled in the art. Here, all the embodiments need not and cannot be exhausted. The changes or variations derived therefrom are still within the protection scope of the application.

Claims

1. A method for manufacturing a perovskite solar cell, characterized in that, a perovskite layer of the perovskite solar cell is formed by the following steps: forming an inorganic precursor solution and further forming an inorganic precursor film layer; a solvent of the inorganic precursor solution comprises a mixture of DMF and DMSO; inorganic precursor materials for forming the inorganic precursor solution at least comprise CsX and PbX 2; X in CsX is Br or I, and X in PbX 2 is I; forming an organic precursor solution, applying the organic precursor solution on the surface of the inorganic precursor film layer, mixing the organic precursor solution with the inorganic precursor film layer to form a mixed precursor solution layer; organic precursor materials of the organic precursor solution at least comprise two of FAX and MAX; X in FAX is Br or I, and X in MAX is Cl; and diffusion annealing, converting the mixed precursor solution layer into the perovskite layer. 2.The method for manufacturing a perovskite solar cell according to claim 1, characterized in that, the step of forming the inorganic precursor solution and further forming the inorganic precursor film layer comprises: mixing two or more inorganic precursor materials and adjusting the inorganic precursor solution to a corresponding preset molar content; spreading the inorganic precursor solution on a substrate to be formed into a film layer; the spreading mode comprises spin coating; and annealing the spread inorganic precursor solution to form an inorganic precursor film layer, the inorganic precursor film layer being a liquid film layer. 3.The method for manufacturing a perovskite solar cell according to claim 2, characterized in that, in the inorganic precursor solution, the molar content of CsX and the molar content of PbX 2 are different; the molar content of CsX is 0.10 mol / L to 0.20 mol / L; the molar content of PbX 2 is 1.00 mol / L to 2.00 mol / L; in the mixed solvent of DMF and DMSO, the ratio of DMF to DMSO is DMF: DMSO = 900: 100 to 990: 10; preferably, in the mixed solvent of DMF and DMSO, the ratio of DMF to DMSO is DMF: DMSO = 950: 50; and in the inorganic precursor solution, the difference between the molar content of CsX and the molar content of PbX 2 is 0.1 mol / L. 4.The method for manufacturing a perovskite solar cell according to claim 1, characterized in that, the step of forming the organic precursor solution, applying the organic precursor solution on the surface of the inorganic precursor film layer, and mixing the organic precursor solution with the inorganic precursor film layer to form a mixed precursor solution layer comprises: adjusting at least two organic precursor materials into an organic precursor solution with a corresponding preset molar content; a solvent of the organic precursor solution comprises IPA; and spreading and mixing the organic precursor solution on the surface of the inorganic precursor film layer; the spreading mode comprises spin coating. 5.The method for manufacturing a perovskite solar cell according to claim 4, characterized in that, in the organic precursor solution, the organic precursor materials comprise FAI, FABr and MACl. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The content of FAI in the organic precursor solution is 0.12-0.22 mol / L, the content of FABr is 0.16-0.32 mol / L, and the content of MACl is 0.1 mol / L. 6.The method of claim 1, wherein the annealing temperature is 100-200 ℃. 7.The method of claim 1, wherein the annealing time is 10-60 min. 8.The method of claim 1, wherein the relative humidity is 20-60%. 9.The method of claim 1, wherein the substrate layer is provided. 10.The method of claim 1, wherein the i-type hydrogenated amorphous silicon layer, the P-type amorphous silicon doped layer, the first transparent electrode layer, and the first metal electrode layer are sequentially stacked on one side of the substrate layer.

7. The method for manufacturing a perovskite solar cell according to claim 1, characterized in that, 11.The method of claim 1, wherein the i-type hydrogenated amorphous silicon layer, the N-type amorphous silicon doped layer, the transparent conductive layer, the hole transport layer, the passivation layer, the electron transport layer, the second transparent conductive layer, the second metal electrode layer, and the anti-reflection layer are sequentially stacked on the other side of the substrate layer. 12.The method of claim 1, wherein the perovskite layer is formed on the surface of the hole transport layer away from the substrate layer, and the passivation layer is formed on the surface of the perovskite layer away from the substrate layer. 13.A perovskite solar cell, comprising: 14.The perovskite solar cell of claim 13, wherein the perovskite solar cell is manufactured by the method of any one of claims 1-7. 15.The perovskite solar cell of claim 13, wherein the perovskite solar cell comprises a single-junction perovskite solar cell, a perovskite-perovskite tandem solar cell, a perovskite-heterojunction tandem solar cell, or other tandem solar cells containing perovskite solar cell components. 16.The perovskite solar cell of claim 13, wherein the perovskite solar cell comprises: 17.The perovskite solar cell of claim 13, wherein the substrate layer is provided. 18.The perovskite solar cell of claim 13, wherein the i-type hydrogenated amorphous silicon layer, the P-type amorphous silicon doped layer, the first transparent electrode layer, and the first metal electrode layer are sequentially stacked on one side of the substrate layer. 19.The perovskite solar cell of claim 13, wherein the i-type hydrogenated amorphous silicon layer, the N-type amorphous silicon doped layer, the transparent conductive layer, the hole transport layer, the passivation layer, the electron transport layer, the second transparent conductive layer, the second metal electrode layer, and the anti-reflection layer are sequentially stacked on the other side of the substrate layer. 20.The perovskite solar cell of claim 13, wherein the perovskite layer is located between the hole transport layer and the passivation layer. 21.The perovskite solar cell of claim 13, wherein the first transparent conductive layer comprises ITO conductive glass or FTO conductive glass. 22.The perovskite solar cell of claim 13, wherein the second transparent conductive layer comprises ITO conductive glass or FTO conductive glass. 23.The perovskite solar cell of claim 13, wherein the material of the passivation layer comprises phenethylamine iodide or ethylamine iodide. 24.The perovskite solar cell of claim 13, wherein the material of the first metal electrode layer comprises Au, Ag, Cu, Cu-Al alloy, or C. 25.The perovskite solar cell of claim 13, wherein the material of the second metal electrode layer comprises Au, Ag, Cu, Cu-Al alloy, or C. ​ ​ ​ ​ ​

Images