Method for operating a laser system and for generating a target material plasma and for microstructure production therewith, and correspondingly configured laser system

A soft start phase with reduced RF power followed by continuous operation addresses plasma ignition challenges in gas laser systems, ensuring safe and efficient laser radiation generation without additional hardware.

WO2026062073A1 Publication Date: 2026-03-26TRUMPF LASERSYSTEMS FOR SEMICONDUCTOR MANUFACTURING SE
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Patent Information

Application Number
PCT/EP2025/076568
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-09-23
Filing Date
2025-09-17
Publication Date
2026-03-26

AI Technical Summary

Technical Problem

Existing gas laser systems face issues with instantaneous plasma ignition, leading to significant electrical power reflection that can damage high-frequency generators, necessitating additional hardware for ignition aids which increase complexity and cost.

Method used

Implement a soft start phase with reduced RF power to generate free electrons in the laser medium, followed by continuous operation with higher RF power once plasma is ignited, utilizing software control to manage power levels without additional hardware.

Benefits of technology

This approach protects the RF generator from damage, reduces complexity and cost, and enables safe, reliable plasma ignition with efficient laser radiation generation.

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Abstract

The invention relates to a method (18) for operating a laser system (1). In said method, electrodes (4) are supplied with a reduced HF-power in a soft start phase (15) in order to generate free electrons in a gaseous laser medium (3) and to facilitate plasma ignition (17). A switch is then made to continuous operation (16), in which the electrodes (4) are supplied with a greater HF-power. By means of subsequently generated laser radiation (9), a plasma of a target material (11) can be generated for generating secondary radiation (12). This secondary radiation (12) can be used to produce microchips (13) or semiconductor intermediate products (13). The invention also relates to a correspondingly configured laser system (1).
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