Light-emitting diode and light-emitting device

Abstract

The present invention relates to a light-emitting diode and a light-emitting device. The light-emitting diode comprises: a semiconductor stack comprising, from bottom to top, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer that are stacked in sequence; an insulating layer formed on the second semiconductor layer; a transparent conductive layer that is formed on the second semiconductor layer and covers the insulating layer; a protective layer formed on the transparent conductive layer, and provided with an opening that exposes part of the upper surface of the transparent conductive layer; and a second electrode that is formed on the protective layer, comprises a pad portion and an extension portion, and is electrically connected to the transparent conductive layer through the opening of the protective layer. The extension portion of the second electrode has a first end connected to the pad portion of the second electrode and a second end distant from the pad portion of the second electrode, and the insulating layer is only formed below the second end of the extension portion of the second electrode. In the present invention, the insulating layer is only arranged at the end distant from the pad portion of the second electrode, thereby avoiding voltage rise while improving the reliability and luminous efficiency of chips.

Description

Light emitting diode and light emitting device TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and a light emitting device. BACKGROUND

[0002] A light emitting diode (LED) is usually made of a semiconductor such as GaN, GaAs, GaP, GaAsP, etc., and its core is a PN junction with light emitting characteristics. Under a forward voltage, electrons are injected from an N region to a P region, and holes are injected from a P region to an N region. A part of the minority carriers entering the opposite region recombine with the majority carriers to emit light. The LED has the advantages of high light intensity, high efficiency, small size, long service life, etc., and is considered to be one of the most potential light sources at present.

[0003] The known gallium nitride LED chip manufacturing process currently includes four processes of mesa etching (MESA), making a transparent conductive layer (such as ITO), making a protective layer, and making an electrode, or five processes of mesa etching (MESA), making an insulating layer, making a transparent conductive layer (such as ITO), making a protective layer, and making an electrode. In the LED industry, in order to achieve effective current expansion, a plurality of expansion electrodes are generally designed. In the existing four processes, the charges near the ends of the expansion electrodes are easy to concentrate, which causes the ESD explosion point to be prone to occur in this area and burn, thereby causing the chip to fail and die. In the existing five processes, an insulating layer is added as a current blocking layer, and the insulating layer is set corresponding to the expansion electrode and is designed to be expanded outward. However, the area of the current blocking layer is too large, which often leads to an increase in voltage. Therefore, how to further optimize the design of the current blocking layer to improve the overall performance of the light emitting diode chip is a technical problem that needs to be solved by those skilled in the art. TECHNICAL SOLUTION

[0004] In view of the defects and deficiencies of the prior art light emitting diode, the present application provides a light emitting diode and a light emitting device to improve the reliability and light emitting efficiency of the chip while avoiding an increase in chip voltage.

[0005] One embodiment of the present application provides a light emitting diode, comprising:

[0006] a semiconductor stack, comprising, from bottom to top, a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in sequence;

[0007] an insulating layer formed on the second semiconductor layer;

[0008] a transparent conductive layer formed on the second semiconductor layer and covering the insulating layer;

[0009] a protective layer formed on the transparent conductive layer and having an opening exposing a part of the upper surface of the transparent conductive layer;

[0010] a second electrode formed on the protective layer, comprising a pad portion and an extension portion, and electrically connected with the transparent conductive layer through the opening of the protective layer;

[0011] characterized in that the extension portion of the second electrode has a first end connected with the pad portion of the second electrode and a second end away from the pad portion of the second electrode, and the insulating layer is only formed under the second end of the extension portion of the second electrode.

[0012] According to another embodiment of the present application, there is also provided a light emitting device using the light emitting diode as described in any of the above embodiments.

[0013] The light emitting diode provided by the present application can avoid ESD explosion point at the end of the extension electrode due to excessive concentration of electric charges, improve the anti-static shock capability of the chip, and thus ensure the reliability of the light emitting diode, on the one hand. On the other hand, the direct injection of current at the end of the extension electrode can be avoided, the overall current uniformity of the light emitting diode is improved, and thus the light emitting efficiency of the light emitting diode chip is improved. In addition, the area of the current blocking layer under the extension electrode can be reduced, and thus the voltage rise of the chip is avoided.

[0014] Other features and advantages of the present application will be described in the following description and, in part, will become apparent to those skilled in the art upon examination of the following description or can be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without any creative effort.

[0016] Fig. 1 is a top view of a light emitting diode provided by an embodiment of the present application;

[0017] Fig. 2 is a cross-sectional structure view along the line A-A' of Fig. 1;

[0018] Fig. 3 is a partial enlarged view of the boxed area of Fig. 2;

[0019] Fig. 4 is a cross-sectional structure view along the line B-B' of Fig. 1;

[0020] Fig. 5 is a photomask diagram for manufacturing the light emitting diode provided by the present application;

[0021] Fig. 6 is a schematic diagram of a current flow path of a light emitting diode according to the present application;

[0022] Fig. 7 is a schematic diagram of a top view of another light emitting diode according to an embodiment of the present application;

[0023] Fig. 8 is a schematic diagram of a cross-sectional structure along the line A-A' of Fig. 7;

[0024] Fig. 9 is a schematic diagram of a top view of still another light emitting diode according to an embodiment of the present application;

[0025] Fig. 10 is a schematic diagram of a cross-sectional structure along the line A-A' of Fig. 9;

[0026] Fig. 11 is a schematic diagram of a top view of yet another light emitting diode according to an embodiment of the present application;

[0027] Fig. 12 is a schematic diagram of a cross-sectional structure along the line A-A' of Fig. 11;

[0028] Fig. 13 is a schematic diagram of a top view of a light emitting diode according to another embodiment of the present application;

[0029] Fig. 14 is a schematic diagram of a cross-sectional structure along the line A-A' of Fig. 13;

[0030] Fig. 15 is a schematic diagram of a top view of a light emitting diode according to a further embodiment of the present application;

[0031] Fig. 16 is a schematic diagram of a cross-sectional structure along the line A-A' of Fig. 15;

[0032] Fig. 17 is a schematic diagram of a top view of a light emitting diode according to a still further embodiment of the present application;

[0033] Fig. 18 is a schematic diagram of a cross-sectional structure along the line A-A' of Fig. 17;

[0034] Fig. 19 is a schematic diagram of a top view of a light emitting diode according to a yet further embodiment of the present application;

[0035] Fig. 20 is a schematic diagram of a top view of another light emitting diode according to a yet further embodiment of the present application.

[0036] Reference numerals:

[0037] 10 - substrate; 12 - semiconductor stack; 123 - first semiconductor layer; 124 - light emitting layer; 125 - second semiconductor layer; 14 - insulating layer; 16 - transparent conductive layer; 18 - protective layer; 21 - first electrode; 211 - first electrode pad portion; 212 - first electrode extension portion; 22 - second electrode; 221 - second electrode pad portion; 222 - second electrode extension portion; 2221 - first end of second electrode extension portion; 2222 - second end of second electrode extension portion; 2220 - terminal end of second electrode extension portion; 31 - first opening; 310 - horn; 32 - second opening; 321 - first opening portion; 322 - second opening portion; 33 - third opening; 34 - fourth opening; 35 - fifth opening; 36 - sixth opening; 40 - via hole. DETAILED DESCRIPTION

[0038] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. The technical features designed in different embodiments of the present application can be combined with each other as long as they do not conflict with each other.

[0039] The present application provides a light emitting diode, comprising:

[0040] a semiconductor stack comprising, from bottom to top, a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence;

[0041] an insulating layer formed on the second semiconductor layer;

[0042] a transparent conductive layer formed on the second semiconductor layer and covering the insulating layer;

[0043] a protective layer formed on the transparent conductive layer and having an upper surface with an opening exposing a portion of the transparent conductive layer;

[0044] a second electrode formed on the protective layer, comprising a pad portion and an extension portion, and electrically connected to the transparent conductive layer through the opening of the protective layer;

[0045] characterized in that the second electrode extension portion has a first end connected to the second electrode pad portion and a second end away from the second electrode pad portion, and the insulating layer is formed only under the second end of the second electrode extension portion.

[0046] The application can avoid ESD explosion point at the end of the extended electrode due to excessive charge concentration, thereby improving the anti-static impact capability of the chip and ensuring the reliability of the light emitting diode. In addition, the current can be prevented from being directly injected at the end of the extended electrode, so that the current at the end of the extended electrode can be diffused as evenly as possible in all directions, promoting the lateral expansion of the current, improving the overall current uniformity of the light emitting diode, and further improving the light emitting efficiency of the light emitting diode chip. In addition, the unnecessary current blocking layer under the extended electrode can be cancelled, thereby effectively reducing the area of the current blocking layer and avoiding the voltage rise of the chip.

[0047] In an embodiment, the insulating layer has an overlapping portion with the second electrode extension portion, and the length of the overlapping portion accounts for 1% to 50% of the length of the second electrode extension portion.

[0048] In an embodiment, the insulating layer has an overlapping portion with the second electrode extension portion, and the area of the overlapping portion accounts for 1% to 50% of the area of the second electrode extension portion.

[0049] By controlling the size of the current blocking layer under the extended electrode through the length or area ratio of the overlapping portion of the insulating layer and the second electrode extension portion, the voltage rise caused by the excessive area of the current blocking layer can be avoided.

[0050] In an embodiment, the insulating layer and the second electrode extension portion directly above the insulating layer have a width difference, and the width difference gradually increases from the first end of the second electrode extension portion to the second end of the second electrode extension portion. Through the gradual change of the width difference, the phenomenon of excessive charge concentration at the second end of the second electrode extension portion away from the second electrode pad portion under static impact can be further improved, and the current congestion near the second end due to the position offset of the insulating layer can also be avoided, thereby further improving the anti-static impact performance of the chip and the reliability of the overall electrode structure.

[0051] In an embodiment, the insulating layer is composed of a series of block structures. By setting the insulating layer as a series of block structures, the current can be more evenly diffused at the end of the extended electrode, further improving the overall current uniformity of the light emitting diode.

[0052] In an embodiment, the protective layer forms a first opening and a second opening in the pad portion and the extension portion of the second electrode, respectively, exposing part of the upper surface of the second semiconductor layer in the second electrode pad portion and part of the upper surface of the transparent conductive layer in the second electrode extension portion.

[0053] In an embodiment, the transparent conductive layer forms a third opening in the pad portion of the second electrode, exposing a part of the upper surface of the second semiconductor layer in the pad portion of the second electrode, and the size of the third opening is smaller than the size of the pad portion of the second electrode.

[0054] In an embodiment, the size of the first opening is smaller than the size of the third opening, the pad portion of the second electrode is in contact with the second semiconductor layer, and the extension portion of the second electrode is in contact with the transparent conductive layer.

[0055] Through the above arrangement, the pad portion of the second electrode can form an electrical connection with the second semiconductor layer through the first opening of the protective layer and the third opening of the transparent conductive layer, and the extension portion of the second electrode can be in contact with the transparent conductive layer through the second opening of the protective layer, and further form an electrical connection with the second semiconductor layer. At the same time, by arranging the size of the first opening to be smaller than the size of the third opening, the brightness of the light-emitting diode is further improved.

[0056] In an embodiment, the first opening has a ring structure, and the inner diameter and the outer diameter of the ring structure are both smaller than the diameter of the third opening, further improving the brightness of the light-emitting diode.

[0057] In an embodiment, the protective layer further comprises at least one antenna extending from the first opening to the periphery of the pad portion of the second electrode, exposing a part of the upper surface of the transparent conductive layer, and at the position of the antenna, the pad portion of the second electrode is in contact with both the second semiconductor layer and the transparent conductive layer. Through the antenna, the pad portion of the second electrode can be in contact with the transparent conductive layer, and the contact area between the pad portion of the second electrode and the transparent conductive layer can be increased, which is conducive to the diffusion of current, further alleviating the current congestion effect on the second electrode, and reducing the risk of metal precipitation and electrode burnout.

[0058] In an embodiment, the protective layer has a plurality of second openings, and the second openings are arranged in sequence along the extension direction gradually away from the pad portion of the second electrode.

[0059] In an embodiment, the sizes of the plurality of second openings are the same.

[0060] In an embodiment, the sizes of the plurality of second openings increase in sequence along the extension direction gradually away from the pad portion of the second electrode. In the present application, the sizes of the second openings can be the same or different. Since the current density often gradually increases along the extension direction of the extension portion of the second electrode, in some preferred embodiments, through the design that the sizes of the second openings increase in sequence along the extension direction of the extension portion of the second electrode, it can prevent ESD explosion points from occurring due to excessive concentration of charges in areas with high current density, such as positions close to the end of the extension electrode; at the same time, it can also alleviate the current congestion effect on the second electrode, improve the overall current uniformity of the light-emitting diode, and further improve the reliability and light-emitting efficiency of the light-emitting diode chip.

[0061] In an embodiment, the second openings have a spacing therebetween, and the spacing has a same size.

[0062] In an embodiment, the second openings have a spacing therebetween, and the spacing has a size gradually decreasing along an extending direction of the second electrode extension. In the present application, the spacing between the second openings can be the same or different, and by designing the spacing between the second openings to gradually decrease along the extending direction of the second electrode extension, the ESD explosion point caused by excessive concentration of charges in the area with high current density can also be prevented, and the current congestion effect on the second electrode can be alleviated, the overall current uniformity of the light emitting diode is improved, and the reliability and luminous efficiency of the light emitting diode chip are further improved.

[0063] In an embodiment, the second opening includes a plurality of first opening portions with the same size and at least one second opening portion, the second opening portion is arranged below the second end of the second electrode extension and corresponds to the insulating layer, and the size of the second opening portion is greater than that of the first opening portion. Since the end of the extension electrode is often a high current density area, by arranging the second opening portion with the largest size below the second end of the second electrode extension, the current at the end of the extension electrode can be diffused as uniformly as possible to the surrounding through the second opening portion with the large size, the ESD explosion point caused by excessive concentration of charges at the end of the extension electrode can be avoided, the overall current uniformity of the light emitting diode is improved, and the reliability and luminous efficiency of the light emitting diode chip are further improved.

[0064] In an embodiment, the width of the insulating layer is greater than or equal to the width of the second opening portion. Thus, the current at the end of the extension electrode is diffused to the surrounding, and the overall current uniformity of the light emitting diode is further improved.

[0065] In an embodiment, the ratio of the area of the insulating layer to the area of the second opening portion ranges from 10% to 200%. By the cooperation of the insulating layer at the end of the extension electrode and the second opening portion with the large size, the reliability and luminous efficiency of the light emitting diode chip are further improved, and the voltage rise caused by the excessively large area of the current blocking layer can also be avoided.

[0066] In an embodiment, the light emitting diode further includes a first electrode, the first electrode includes a pad portion and an extension portion, the pad portion of the first electrode is located above the first semiconductor layer, the extension portion of the first electrode is located above the second semiconductor layer and forms an ohmic contact with the first semiconductor layer through a series of through holes penetrating the second semiconductor layer and the light emitting layer, and a protective layer is arranged between the first electrode extension portion and the second semiconductor layer.

[0067] The present application also provides a light emitting device using the light emitting diode according to any one of the above embodiments to effectively improve the performance of the light emitting device.

[0068] The technical solutions of the present application will be described clearly and completely in various specific embodiments in combination with the drawings of the embodiments of the present application. Embodiment One

[0069] Please refer to FIG. 1-4, FIG. 1 is a top view of a light emitting diode according to an embodiment of the present application, FIG. 2 is a cross-sectional view along the line A-A' of FIG. 1, FIG. 3 is a partial enlarged view of the boxed area of FIG. 2, and FIG. 4 is a cross-sectional view along the line B-B' of FIG. 1. To achieve at least one of the above advantages or other advantages, an embodiment of the present application provides a light emitting diode, which can include at least a substrate 10, a semiconductor stack 12, a first electrode 21, a second electrode 22, an insulating layer 14, a transparent conductive layer 16, and a protective layer 18. The first electrode 21 includes a pad portion 211 and an extension portion 212, and the second electrode 22 includes a pad portion 221 and an extension portion 222. The second electrode extension portion 222 includes a first end 2221 connected to the second electrode pad portion 221 and a second end 2222 away from the second electrode pad portion 221.

[0070] Specifically, the substrate 10 can be a transparent substrate or a non-transparent substrate or a semi-transparent substrate, and the substrate 10 can be selected from, but not limited to, sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide, and glass. The surface structure of the substrate 10 can be a planar structure or a patterned structure. In some embodiments, the substrate 10 can be a combined patterned substrate. In other embodiments, the substrate 10 can be thinned or removed to form a thin-film chip.

[0071] The semiconductor stack 12 is disposed on the upper surface of the substrate 10, and the semiconductor stack 12 includes a first semiconductor layer 123, a light emitting layer 124, and a second semiconductor layer 125 stacked in sequence. The first semiconductor layer 123 is formed on the substrate 10 and can be a gallium nitride-based semiconductor layer doped with an n-type impurity, such as Si, as a layer grown on the substrate 10. In some embodiments, a buffer layer can be disposed between the first semiconductor layer 123 and the substrate 10. In other embodiments, the first semiconductor layer 123 can be connected to the substrate 10 through an adhesive layer.

[0072] The light emitting layer 124 is formed on the first semiconductor layer 123, and can be a quantum well structure (QW). In some embodiments, the light emitting layer 124 can also be a multiple quantum well structure (MQW) including a plurality of well layers (Well) and a plurality of barrier layers (Barrier) alternately arranged in a repeated manner. In addition, the composition and thickness of the well layers in the light emitting layer 124 determine the wavelength of the generated light. In particular, by adjusting the composition of the well layers, light emitting layers generating ultraviolet light, blue light, green light, yellow light, etc. of different colors can be provided.

[0073] The second semiconductor layer 125 is formed on the light emitting layer 124, and can be a gallium nitride-based semiconductor layer doped with a p-type impurity such as Mg. Although the first semiconductor layer 123 and the second semiconductor layer 125 can each be a single layer structure, the present case is not limited thereto, and can also be a multiple layer, and can further include a superlattice layer. In addition, in other embodiments, in the case where the first semiconductor layer 123 is doped with a p-type impurity, the second semiconductor layer 125 can be doped with an n-type impurity, i.e., the first semiconductor layer 123 is a P-type semiconductor layer, and the second semiconductor layer 125 is an N-type semiconductor layer.

[0074] In an embodiment, the mesa and a series of through holes 40 penetrating the second semiconductor layer 125, the light emitting layer 124 are formed on the second semiconductor layer 125 to expose part of the surface of the first semiconductor layer 123, the number of the through holes 40 is 1-15. The insulating layer 14 is formed on the second semiconductor layer 125 and distributed below the position of the second electrode extension 222; the transparent conductive layer 16 is formed on the second semiconductor layer 125 and covers the insulating layer 14, and forms the third opening 33 at the corresponding position of the pad portion 221 of the second electrode to expose part of the upper surface of the second semiconductor layer 125 at the pad area of the second electrode, forms the sixth opening 36 at the corresponding position of the extension portion 212 of the first electrode, the size of the sixth opening 36 is larger than the size of the through hole 40, and the transparent conductive layer 16 and the protective layer 18 are arranged between the first electrode extension portion 212 and the second semiconductor layer 125 outside the through hole 40; the protective layer 18 is formed on the transparent conductive layer 16 and covers the upper surface of the mesa and the sidewall between the mesa and the upper surface of the second semiconductor layer 125, i.e. basically covers the surface of the entire device, and forms the first opening 31 and the second opening 32 at the corresponding positions of the pad portion 221 and the extension portion 222 of the second electrode to expose part of the upper surface of the second semiconductor layer 125 at the pad area of the second electrode and part of the upper surface of the transparent conductive layer 16 at the extension area of the second electrode, so that the second electrode pad portion 221 contacts the second semiconductor layer 125 through the first opening 31, and the second electrode extension portion 222 contacts the transparent conductive layer 16 through the second opening 32, the protective layer 18 forms the fourth opening 34 and the fifth opening 35 at the corresponding positions of the pad portion 211 and the extension portion 212 of the first electrode, the fifth opening 35 is formed in the through hole 40, the size of the fifth opening 35 is smaller than the size of the through hole 40, and the protective layer 18 covers the sidewall of the through hole 40 in the through hole 40; the first electrode 21 and the second electrode 22 are formed on the protective layer 18, wherein the first electrode pad portion 211 is formed on the mesa and contacts the first semiconductor layer 123 through the fourth opening 34, as shown in FIG. 1 and FIG. 4, the fourth opening 34 can be a ring-shaped opening, the first electrode extension portion 212 is formed on the protective layer 18 above the second semiconductor layer 125 and contacts the first semiconductor layer 123 through the fifth opening 35 and the through hole 40, the second electrode pad portion 221 contacts the second semiconductor layer 125 through the first opening 31, and the second electrode extension portion 222 contacts the transparent conductive layer 16 through the second opening 32, as shown in FIG. 1-3, the first opening 31 can be a ring-shaped opening.

[0075] The first electrode 21 and the second electrode 22 can be metal electrodes, i.e. the first electrode 21 and the second electrode 22 are made of a metal material, for example at least one of nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten and molybdenum, or at least one selected from an alloy or a stack of the above-mentioned materials. As an example, in the present embodiment, the first electrode 21 can be an N electrode and the second electrode 22 can be a P electrode.

[0076] The transparent conductive layer 16 can include at least one of indium tin oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc indium oxide (ZIO), gallium indium oxide (GIO), zinc tin oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO). As an example, in the present embodiment, the transparent conductive layer 16 is preferably an ITO (indium tin oxide semiconductor transparent conductive film) layer formed by an evaporation or sputtering process.

[0077] The material of the protective layer 18 can include a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material can include silica gel. The dielectric material includes electrically insulating materials such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the protective layer 18 can be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, which can be, for example, a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices. As an example, in the present embodiment, the material of the protective layer 18 is selected to be SiO2. The protective layer 18 has different functions according to the designed position. In the light emitting diode structure described in the present embodiment, the protective layer 18 protects the surface of the light emitting diode on the one hand, and on the other hand acts as a current blocking layer for inhibiting current over-injection below the electrode, increasing current diffusion of the transparent conductive layer 16, and taking into account the requirements of both, its thickness d is preferably λ / 4n x (2k-1), where λ is the wavelength of the light emitted by the light emitting layer 124, n is the refractive index of the protective layer 18, and k is a natural number greater than or equal to 1, and the preferred value of k is 2-3, and the corresponding thickness is preferably 150-500 nm. When the thickness of the protective layer 18 is too small, it is not conducive to play the role of current blocking layer and protection, and when the thickness is too large, the material itself will additionally increase the light loss due to absorption.

[0078] Please refer to Fig. 3, which is a partial enlarged view of the boxed area of Fig. 2, showing a partial enlarged view of the second electrode 22, the transparent conductive layer 16 forms a third opening 33 at the position corresponding to the second electrode pad portion 221, the protective layer 18 forms a first opening 31 at the position corresponding to the second electrode pad portion 221, and the protective layer 18 covers the inner sidewall of the third opening 33. The diameter of the first opening 31 is preferably smaller than the diameter of the third opening 33, so as to further improve the brightness of the light emitting diode. Specifically, the first opening 31 has a ring structure, the inner diameter of the first opening 31 is defined as d1', the outer diameter of the first opening 31 is defined as d1, the diameter of the second electrode pad portion 221 is defined as d2, and the diameter of the third opening 33 is defined as d3. The relationship among d2, d3, d1 and d1' is preferably d2>d3>d1>d1', so that the upper surface of the second electrode pad portion 221 is in a stepped shape. It should be noted that in some other embodiments, the diameter of the first opening 31 can also be larger than the diameter of the third opening 33. In this design, the adhesion between the electrode and the epitaxial layer can be effectively increased, and the risk of the electrode and the adhesion interface falling off during wire bonding can be reduced. Similarly, in the present embodiment, the outer diameter and the inner diameter of the first opening 31 are both preferably smaller than the diameter of the third opening 33, so as to further improve the brightness of the light emitting diode. However, in some other embodiments, the outer diameter of the first opening 31 can be larger than the diameter of the third opening 33, and the inner diameter of the first opening 31 can be smaller than the diameter of the third opening 33. In this way, the adhesion between the electrode and the epitaxial layer can also be effectively increased, and the wire bonding ability of the electrode can be improved.

[0079] More preferably, the first opening 31 under the second electrode pad portion 221 can have at least one tentacle 310 extending away from the pad portion 221. The number of tentacles 310 is 1-20. At the position of the tentacle 310, the second electrode pad portion 221 is in contact with both the second semiconductor layer 125 and the transparent conductive layer 16. Through the tentacle 310, the second electrode pad portion 221 can be in contact with the transparent conductive layer 16, so as to increase the contact area between the second electrode pad portion 221 and the transparent conductive layer 16, which is beneficial to the diffusion of current, so as to further alleviate the current congestion effect on the second electrode, and reduce the risk of metal precipitation and electrode burning.

[0080] In the present embodiment, the protective layer 18 of the light emitting diode protects the light emitting diode from being damaged on one hand, and can be directly used as a current blocking layer on the other hand, for inhibiting current over-injection below the electrode and increasing current diffusion of the transparent conductive layer 16; the second electrode 22 is directly in contact with the semiconductor layer in the pad area, effectively increasing the adhesion between the electrode and the epitaxial layer, and can reduce the risk of the electrode and the adhesion interface falling off during wire bonding; the second electrode pad part 221 adopts a design of multiple steps, which can effectively buffer the wire bonding impact force and reduce the impact and damage of the wire bonding process on the pad part; the second electrode extension part 222 is located on the protective layer 18 and is in contact with the transparent conductive layer 16 by being punched on the protective layer 18, so that the electrode extension part forms a step shape with upper and lower undulations, increases the angle of light emission at the electrode extension part, and improves the light extraction efficiency; at the same time, since the electrode extension part has high and low step undulations, the contact area of the electrode and other objects can be reduced, the damage of the electrode extension part in the later processes such as reverse film, transportation and transfer can be effectively reduced, and the contamination of the electrode extension part can be reduced.

[0081] In the present application, the insulating layer 14 is distributed below the position of the second electrode extension part 222, and the insulating layer 14 is only formed below the second end 2222 of the second electrode extension part, wherein the second end 2222 of the second electrode extension part is located at one end away from the second electrode pad part 221, and the insulating layer 14 is sandwiched between the semiconductor stack 12 and the transparent conductive layer 16. In a more preferred embodiment, the insulating layer 14 is only provided below the end 2220 of the second electrode extension part. The protective layer 18 forms a series of second openings 32 below the second electrode extension part 222, and has a second opening 32 corresponding to the insulating layer 14, that is, the protective layer 18 has at least one second opening 32 formed below the second end 2222 of the second electrode extension part. Specifically, the second end 2222 of the second electrode extension part has, in sequence, the transparent conductive layer 16, the insulating layer 14, and the second semiconductor layer 125 below it, and the other regions of the second electrode extension part 222 have, in sequence, the partial protective layer 18, the transparent conductive layer 16, and the second semiconductor layer 125 below them. The upper surface of the second electrode extension part 222 formed in this way is stepped. The light emitting diode described in the present embodiment forms the insulating layer 14 as a current blocking layer only below the second end 2222 of the second electrode extension part away from the second electrode pad part 221, which can first avoid the occurrence of ESD explosion points at the end of the extension electrode due to excessive concentration of electric charges, thereby improving the anti-static shock capability of the chip and ensuring the reliability of the light emitting diode; secondly, it can avoid the direct injection of current at the end of the extension electrode, so that the current at the end of the extension electrode spreads as evenly as possible to all directions, promotes the lateral expansion of the current, improves the overall current uniformity of the light emitting diode, and further improves the light emitting efficiency of the light emitting diode chip; please refer to FIG. 6 for details, FIG. 6 is a schematic diagram of the current flow path of the light emitting diode provided by the present application, wherein FIG. 6(a) is a known mesa etching (MESA), transparent conductive layer (such as ITO), protective layer and electrode, etc. four processes mentioned in the background art, it can be seen that at the second end 2222 of the second electrode extension part / the end 2220 of the second electrode extension part, ESD explosion points are easily generated due to excessive concentration of electric charges; FIG. 6(b) is a schematic diagram of the current flow path of the light emitting diode provided by the present application, by forming the insulating layer 14 below the second end 2222 of the second electrode extension part / the end 2220 of the second electrode extension part away from the second electrode pad part 221, the current at the end of the extension electrode can spread to all directions, avoiding the ESD explosion point phenomenon. In addition, by canceling the unnecessary current blocking layer below the extension electrode, compared with the design of the insulating layer corresponding to the extension electrode and being expanded outward in the existing five processes mentioned in the background art, the present application can effectively reduce the area of the current blocking layer and avoid the voltage rise of the chip.In addition, forming the protective layer 18 on the transparent conductive layer 16 and then forming the second electrode 22 can reduce the probability of oxidation of the active metal in the electrode structure during the manufacturing process of the protective layer 18. Furthermore, the four-layer structure of the insulating layer 14, the transparent conductive layer 16, the protective layer 18, and the second electrode extension 222 can form a full-angle reflecting mirror, thereby improving the reflecting ability of the electrode extension area and reducing the light absorption efficiency. The insulating layer 14 is made of an insulating material, which can be an oxide and can be a relatively transparent material, such as one or a combination of silicon oxide, titanium oxide, silicon nitride, aluminum oxide, magnesium fluoride, spin-on glass (SOG), polymer, etc. The application is not limited to the examples listed here. The materials of the insulating layer 14 and the protective layer 18 are preferably low-refractive insulating materials, preferably with a refractive index of 1.5 or less, which can be the same or different. As an example, in the present embodiment, the material of the insulating layer 14 is selected to be SiO2. Preferably, the thickness of the insulating layer 14 is between 50 nm and 500 nm.

[0082] Please continue to refer to FIG. 1. The insulating layer 14 and the second electrode extension 222 have an overlapping portion, and the length of the overlapping portion accounts for 1% to 50% of the length of the second electrode extension 222, or the area of the overlapping portion accounts for 1% to 50% of the area of the second electrode extension 222. Preferably, the ratio is 5% to 30%, and more preferably, the ratio is 10% to 25%. Optionally, the length ratio of the overlapping portion or the area ratio of the overlapping portion can be, for example, 12%, 15%, 18%, 20%, etc. By further limiting the length ratio or the area ratio of the overlapping portion of the insulating layer 14 and the second electrode extension 222, the size of the current blocking layer under the extended electrode can be controlled, thereby avoiding the voltage rise caused by setting too much area of the current blocking layer. It should be particularly noted that the second electrode extension 222 is not simply a straight line, for example, in the present embodiment, the second electrode extension 222 includes a first curved portion 222-1, a straight line portion 222-2, and a second curved portion 222-3. One end of the first curved portion 222-1 is connected to the second electrode pad portion 221, and the other end is connected to the straight line portion 222-2. One end of the straight line portion 222-2 is connected to the first curved portion 222-1, and the other end is connected to the second curved portion 222-3. One end of the second curved portion 222-3 is connected to the straight line portion 222-2, and the other end gradually curves away from the first electrode 21. More specifically, the first curved portion 222-1 includes an extension portion 222-1-0, one end of which is connected to the electrode pad portion, and the other end is connected to the straight line portion 222-2. The second curved portion 222-3 includes a circular-shaped end portion 222-3-0. The length and area of the second electrode extension 222 described above include the length and area of the entire section from the extension portion 222-1-0 to the circular-shaped end portion 222-3-0.

[0083] Please continue to refer to FIG. 1, FIG. 2, in the present application, the protective layer 18 has a plurality of second openings 32, the second openings 32 are arranged in sequence along the extension direction of the second electrode pad portion 221, that is, along the direction from the first end 2221 of the second electrode extension portion to the second end 2222 of the second electrode extension portion, the second openings 32 have intervals between them, the second openings 32 and the intervals are arranged alternately along the extension direction of the second electrode pad portion 221, the number of the second openings 32 and the intervals is 1-25. In some embodiments, the sizes of the plurality of second openings 32 are the same, and the sizes of the intervals between the second openings 32 are also the same. In some variant embodiments, the sizes of the plurality of second openings 32 increase in sequence along the extension direction of the second electrode pad portion 221, which will be described in detail in embodiment 3. In some variant embodiments, the sizes of the intervals decrease in sequence along the extension direction of the second electrode pad portion 221, which will be described in detail in embodiment 4. Of course, the second openings 32 with the same size can also match the intervals with varying sizes, and the intervals with the same size can also match the second openings 32 with varying sizes, which can be selected and used according to specific actual needs, and the present application is not limited thereto. In the present embodiment, the second openings 32 include a plurality of first opening portions 321 with the same size and at least one second opening portion 322, the second opening portion 322 is arranged below the second end 2222 of the second electrode extension portion and corresponds to the insulating layer 14, and the size of the second opening portion 322 is greater than that of the first opening portion 321. This is because the end of the extension electrode is often a high current density area, by arranging the second opening portion 322 with the largest size below the second end 2222 of the second electrode extension portion, the current at the end of the extension electrode can be diffused as uniformly as possible to the surrounding through the second opening portion 322 with the large size, avoiding the occurrence of ESD explosion points due to excessive concentration of electric charge at the end of the extension electrode, and improving the overall current uniformity of the light-emitting diode, thereby improving the reliability and luminous efficiency of the light-emitting diode chip. In the present application, the size of the second opening portion 322 is at least 2 times greater than that of the first opening portion 321; preferably, the size of the second opening portion 332 is 2-20 times greater than that of the first opening portion 321; more preferably, the size of the second opening portion 332 is 2-15 times greater than that of the first opening portion 321; further, the size of the second opening portion 332 is 4-12 times greater than that of the first opening portion 321; optionally, the size of the second opening portion 322 is at least 5 times, 8 times, 10 times, 12 times, 14 times, etc. greater than that of the first opening portion 321.By limiting the ratio of the size of the second opening part 322 to the size of the first opening part 321, the current can be more effectively diffused uniformly to the four corners through the large-size second opening part 322, avoiding the ESD explosion point caused by the charge concentration phenomenon, while improving the overall current uniformity of the light-emitting diode, and further improving the reliability and light-emitting efficiency of the light-emitting diode chip. It should be noted that in the present application, the second opening part 322 can also be more than one, for example, the second opening part 322 is two or more, and the size of any second opening part 322 is greater than the size of any first opening part 321, which can be selected and used according to the specific actual needs, and the present application is not limited thereto. For example, when the size of the second opening part 322 is less than 10 times the size of the first opening part 321, it is preferred that the second opening part 322 is one; when the size of the second opening part 322 is more than 10 times the size of the first opening part 321, it is preferred that the second opening part 322 is two or more.

[0084] In the present application, the width of the insulating layer 14 is preferably greater than or equal to the width of the second opening part 322, so as to strengthen the diffusion of current at the end of the extension electrode to the periphery, further improving the overall current uniformity of the light emitting diode. It should be noted that in other embodiments, the area of the insulating layer 14 can also be smaller than the area of the second opening part 322, and can be selected and used according to specific actual needs, and the present application is not limited thereto. The ratio of the area of the insulating layer 14 to the area of the second opening part 322 ranges from 10% to 200%. Preferably, the ratio is 40% to 150%, and more preferably, the ratio is 50% to 120%, for example, it can be 50%, 70%, 90%, 110%, etc. Please continue to refer to FIG. 1, in the present embodiment, the width of the insulating layer 14 is greater than the width of the second opening part 322, and the area of the insulating layer 14 is greater than the area of the second opening part 322. In some variant embodiments, please refer to FIG. 7 and FIG. 8, FIG. 7 is a top view schematic diagram of another light emitting diode provided by the embodiment one of the present application, and FIG. 8 is a cross-sectional structure schematic diagram along the A-A' line of FIG. 7. In this embodiment, the width of the insulating layer 14 is greater than the width of the second opening part 322, and the area of the insulating layer 14 is smaller than the area of the second opening part 322. In some variant embodiments, please refer to FIG. 9 and FIG. 10, FIG. 9 is a top view schematic diagram of another light emitting diode provided by the embodiment one of the present application, and FIG. 10 is a cross-sectional structure schematic diagram along the A-A' line of FIG. 9. In this embodiment, the width of the insulating layer 14 is equal to the width of the second opening part 322, and the area of the insulating layer 14 is equal to the area of the second opening part 322. In some variant embodiments, please refer to FIG. 11 and FIG. 12, FIG. 11 is a top view schematic diagram of another light emitting diode provided by the embodiment one of the present application, and FIG. 12 is a cross-sectional structure schematic diagram along the A-A' line of FIG. 11. In this embodiment, the width of the insulating layer 14 is equal to the width of the second opening part 322, and the area of the insulating layer 14 is smaller than the area of the second opening part 322. Through the cooperation design of the insulating layer 14 at the end of the extension electrode and the large-size second opening part 322, the reliability and light emitting efficiency of the light emitting diode chip are further improved, and at the same time, the voltage rise caused by the excessive area of the current blocking layer can also be avoided.

[0085] Further, the second opening part 322 and the second electrode extension part 222 have an overlapping part, and the length of the overlapping part accounts for 5% to 25% of the length of the second electrode extension part 222, or the area of the overlapping part accounts for 5% to 25% of the area of the second electrode extension part 222. Preferably, the account ratio is 10% to 20%, and optionally, the length account ratio of the overlapping part or the area account ratio of the overlapping part may be, for example, 12%, 14%, 16%, 18%, etc. Through the length or area account ratio of the overlapping part of the second opening part 322 and the second electrode extension part 222, the current passing through the large-size second opening part 322 is further promoted to be more effectively and uniformly diffused to the surrounding, so that the overall current uniformity on the second electrode can be improved, and the light-emitting efficiency of the light-emitting diode chip is further improved.

[0086] The manufacturing method of the light-emitting diode of the present application mainly includes five processes of mesa etching (MESA), manufacturing an insulating layer 14, manufacturing a transparent conductive layer 16, manufacturing a protective layer 18, and manufacturing an electrode. FIG. 5 shows the corresponding mask patterns involved in the five processes, which are briefly described as follows.

[0087] First, a semiconductor stack 12 is provided, which generally includes a substrate 10, a first semiconductor layer 123, a light-emitting layer 124, and a second semiconductor layer 125.

[0088] Next, referring to the pattern shown in FIG. 5(a), a first electrode area and a second electrode area are defined on the surface of the semiconductor stack 12, and the empty area is removed to form a mesa of the first electrode 21 and a series of through holes 40.

[0089] Next, referring to the pattern shown in FIG. 5(b), an insulating layer 14 is manufactured on the second semiconductor layer 125 of the semiconductor stack 12, which is formed only under the second end 2222 of the second electrode extension part, wherein the second end 2222 of the second electrode extension part is located at one end away from the second electrode pad part 221.

[0090] Next, referring to the pattern shown in FIG. 5(c), a transparent conductive layer 16 is manufactured on the second semiconductor layer 125 of the semiconductor stack 12, and the mesa area is etched and removed, and an opening 33 is formed in the pad area of the second electrode area, and an opening 36 is formed in the corresponding position of the through hole 40.

[0091] Then, referring to the pattern shown in Fig. 5 (d), a protective layer 18 is formed on the transparent conductive layer 16, which covers the sidewalls of the via hole 40, the sidewalls between the transparent conductive layer 16 and the mesa, and the surface of the mesa, forms an opening 31 in the pad area of the second electrode, forms an opening 32 in the extension area of the second electrode, forms an opening 34 on the mesa, and forms an opening 35 in the extension part 212 of the first electrode, which is formed in the via hole 40 and has a size smaller than that of the via hole 40. Preferably, the opening 31 has a ring structure, and the inner diameter d1' and the outer diameter d1 of the ring are both smaller than the diameter d3 of the opening 33. Preferably, the opening 32 includes a plurality of first opening parts 321 having the same size and at least one second opening part 322, which is arranged below the second end 2222 of the extension part of the second electrode and corresponds to the insulating layer 14, and has a size larger than that of the first opening part 321.

[0092] Then, referring to the pattern shown in Fig. 5 (e), the first electrode 21 and the second electrode 22 are formed on the protective layer 18. The second electrode pad part 221 is in contact with the second semiconductor layer 125 through the first opening 31, and is in contact with the second semiconductor layer 125 and the protective layer 18. The second electrode extension part 222 is in contact with the transparent conductive layer 16 through the second opening 32. The pad part 211 of the first electrode is located above the first semiconductor layer 123, and is in contact with the first semiconductor layer 123 through the fourth opening 34. The pad part 211 of the first electrode is in contact with the first semiconductor layer 123 and the protective layer 18. The extension part 212 of the first electrode is located above the second semiconductor layer 125, and is in contact with the first semiconductor layer 123 through the fifth opening 35 and the via hole 40.

[0093] It should be particularly noted that the shape and size of the openings 31 and 34 are not limited to the above description, and they can also be directly formed in a non-ring structure, for example, in some embodiments, the center part of the pad part of the electrode is not covered by the protective layer 18 and is directly in contact with the semiconductor stack 12. In other embodiments, the openings 31 and 34 can also be designed as a series of tentacle structures distributed around the pad area, which exposes the transparent conductive layer 16, and the pad area is not formed with an opening structure. In this case, the pad part of the electrode is completely formed on the protective layer 18 and can be connected to the tentacle structure by a metal lead. Embodiment Two

[0094] Please refer to FIG. 13, FIG. 14, FIG. 13 is a top view of the light emitting diode provided by the second embodiment of the present application, and FIG. 14 is a cross-sectional structure view along the line A-A' of FIG. 13. Compared with the light emitting diode of the first embodiment of the present application, the difference of the light emitting diode of the second embodiment mainly lies in that, in the present embodiment, the insulating layer 14 is in a block shape and is composed of a series of discrete block structures, and there are gaps between the block structures. By setting the insulating layer 14 as a series of block structures, the current at the end of the extension electrode can not only diffuse to the surrounding, but also diffuse through the gaps between the blocks, so that the current at the end of the extension electrode diffuses more uniformly, further improving the overall current uniformity of the light emitting diode. The areas of the block structures can be equal, and in some preferred embodiments, the areas of the block structures can also be unequal (not shown in the figure). Specifically, when the insulating layer 14 is composed of a series of block structures with unequal areas, the area of the block structure is the largest near the second end 2222 of the second electrode extension part, and the area becomes smaller and smaller away from the second end 2222 of the second electrode extension part, and the area of the block structure farthest from the second end 2222 of the second electrode extension part is the smallest. In this way, it can be prevented that ESD explosion points appear in the area with high current density, for example, near the end of the extension electrode, due to excessive concentration of electric charges; at the same time, the current congestion effect on the second electrode can be alleviated, the overall current uniformity of the light emitting diode is improved, and the reliability and light emitting efficiency of the light emitting diode chip are further improved. Embodiment three

[0095] Please refer to FIG. 15, FIG. 16, FIG. 15 is a top view of the LED provided by the third embodiment of the present application, and FIG. 16 is a cross-sectional view along the line A-A' of FIG. 15. Compared with the LED of the first embodiment of the present application, the LED of the third embodiment is mainly different in that in the present embodiment, the sizes of the second openings 32 of the several second openings 32 of the protective layer 18 gradually increase along the extending direction away from the second electrode pad portion 221. Specifically, the size of the second opening 32 is the smallest near the second electrode pad portion 221, and the size of the opening 32 gradually increases away from the second electrode pad portion 221, and the size of the second opening 32 at the second end 2222 of the second electrode extension portion is the largest. Since the current density gradually increases along the extending direction away from the second electrode pad portion 221, in some preferred embodiments, the design that the sizes of the second openings 32 gradually increase along the extending direction of the electrode extension portion can prevent ESD breakdown points from occurring due to excessive concentration of charges in the area with high current density, for example, near the end of the extension electrode; at the same time, it can also alleviate the current congestion effect on the second electrode, improve the overall current uniformity of the LED, and thus improve the reliability and light-emitting efficiency of the LED chip. Embodiment four

[0096] Please refer to FIG. 17, FIG. 18, FIG. 17 is a top view of the LED provided by the fourth embodiment of the present application, and FIG. 18 is a cross-sectional view along the line A-A' of FIG. 17. Compared with the LED of the first embodiment of the present application, the LED of the fourth embodiment is mainly different in that the protective layer 18 has several second openings 32, and the second openings 32 have intervals therebetween, and the sizes of the intervals gradually decrease along the extending direction away from the second electrode pad portion 221. Specifically, the size of the interval of the second opening 32 is the largest near the second electrode pad portion 221, and the size of the interval gradually decreases away from the second electrode pad portion 221, and the size of the interval of the second opening 32 at the second end 2222 of the second electrode extension portion is the smallest. The design that the intervals between the second openings 32 gradually decrease along the extending direction of the second electrode extension portion 222 can also prevent ESD breakdown points from occurring due to excessive concentration of charges in the area with high current density; at the same time, it can also improve the overall current uniformity of the LED, and thus improve the reliability and light-emitting efficiency of the LED chip. Embodiment five

[0097] Please refer to FIG. 19, FIG. 20, FIG. 19 is a top view of a light emitting diode according to the fifth embodiment of the present application, and FIG. 20 is another top view of a light emitting diode according to the fifth embodiment of the present application. Compared with the light emitting diode according to the first embodiment of the present application, the difference between the light emitting diode according to the fifth embodiment of the present application mainly lies in that the width difference AW between the insulating layer 14 and the second electrode extension part 222 above the insulating layer 14 gradually increases along the direction from the first end 2221 of the second electrode extension part to the second end 2222 of the second electrode extension part. In some embodiments, please refer to FIG. 18, the second electrode extension part 222 gradually becomes thinner along the direction from the first end 2221 to the second end 2222, or in other words, the second electrode extension part 222 gradually becomes thinner along the direction away from the second electrode pad part 221, and has a width W1 above the insulating layer 14 and a width W3, wherein the width W3 is closer to the second end 2222 of the second electrode extension part than the width W1, and W1 > W3; the width of the insulating layer 14 is constant or gradually increases along the direction from the first end 2221 to the second end 2222 (not shown in the figure), and has a width W2 below the width W1 and a width W4 below the width W3, wherein the width W4 is closer to the second end 2222 of the second electrode extension part than the width W2, and W2 ≤ W4, the first width difference between the width W2 and the width W1 is AW1, and the second width difference between the width W4 and the width W3 is AW2, and AW1 < AW2. In some variant embodiments, please refer to FIG. 19, the width of the insulating layer 14 gradually increases along the direction from the first end 2221 to the second end 2222, or in other words, the width of the insulating layer 14 gradually decreases along the direction away from the second electrode pad part 221, and has a width W2 below the second electrode extension part 222 and a width W4, wherein the width W4 is closer to the second end 2222 of the second electrode extension part than the width W2, and W2 < W4; the second electrode extension part 222 is constant or gradually becomes thinner along the direction from the first end 2221 to the second end 2222 (not shown in the figure), and has a width W1 above the width W2 and a width W3 above the width W4, wherein the width W3 is closer to the second end 2222 of the second electrode extension part than the width W1, and W1 ≥ W3, the first width difference between the width W2 and the width W1 is AW1, and the second width difference between the width W4 and the width W3 is AW2, and AW1 < AW2. Through the gradual change of the width difference, the phenomenon that the charge distribution is too concentrated under the electrostatic shock at the second end 2222 of the second electrode extension part away from the second electrode pad part 221 can be further improved, and the current crowding near the second end 2222 due to the position offset of the insulating layer can also be avoided, thereby further improving the anti-electrostatic shock performance of the chip and the reliability of the overall electrode structure.

[0098] The application further provides a light emitting device using the light emitting diode, which can effectively improve the performance of the light emitting device.

[0099] In conclusion, the light emitting diode provided by the application can improve the reliability and light emitting efficiency of the chip, and avoid voltage rise by arranging the insulating layer only at one end away from the second electrode pad.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the application, and not to limit them; although the application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the application.

Claims

1. A light emitting diode, characterized by, The light emitting diode comprises: a semiconductor stack comprising, from bottom to top, a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence; an insulating layer formed on the second semiconductor layer; a transparent conductive layer formed on the second semiconductor layer and covering the insulating layer; a protective layer formed on the transparent conductive layer and having an opening exposing part of the upper surface of the transparent conductive layer; a second electrode formed on the protective layer, comprising a pad portion and an extension portion, and electrically connected with the transparent conductive layer through the opening of the protective layer; characterized in that the second electrode extension portion has a first end connected with the second electrode pad portion and a second end away from the second electrode pad portion, and the insulating layer is only formed under the second end of the second electrode extension portion.

2. The light emitting diode of claim 1, wherein: The insulating layer and the second electrode extension portion have an overlapping portion, and the length of the overlapping portion accounts for 1% to 50% of the length of the second electrode extension portion.

3. The light emitting diode of claim 1, wherein: The insulating layer and the second electrode extension portion have an overlapping portion, and the area of the overlapping portion accounts for 1% to 50% of the area of the second electrode extension portion.

4. The light emitting diode of claim 1, wherein: The insulating layer and the second electrode extension portion directly above it have a width difference, and the width difference gradually increases along the direction from the first end of the second electrode extension portion to the second end of the second electrode extension portion.

5. The light emitting diode of claim 1, wherein: The insulating layer is composed of a series of block structures.

6. The light emitting diode of claim 1, wherein: The protective layer forms a first opening and a second opening on the pad portion and the extension portion of the second electrode respectively, exposing part of the upper surface of the second semiconductor layer located in the second electrode pad portion and part of the upper surface of the transparent conductive layer located in the second electrode extension portion.

7. The light emitting diode of claim 1, wherein: The transparent conductive layer forms a third opening on the pad portion of the second electrode, exposing part of the upper surface of the second semiconductor layer located in the second electrode pad portion, and the size of the third opening is smaller than the size of the second electrode pad portion.

8. The light emitting diode of claim 7, wherein: The size of the first opening is smaller than the size of the third opening, the pad portion of the second electrode is in contact with the second semiconductor layer, and the extension portion of the second electrode is in contact with the transparent conductive layer.

9. The light emitting diode of claim 7, wherein: The first opening is a ring structure, and the inner diameter and the outer diameter of the ring structure are both smaller than the diameter of the third opening.

10. The light emitting diode of claim 6, wherein: The protective layer further comprises at least one antenna extending from the first opening to the periphery of the second electrode pad portion, exposing part of the upper surface of the transparent conductive layer, and at the position of the antenna, the pad portion of the second electrode is in contact with both the second semiconductor layer and the transparent conductive layer.

11. The light emitting diode of claim 6, wherein: The protective layer has a plurality of second openings, and the second openings are arranged in sequence along the extension direction gradually away from the second electrode pad portion.

12. The light emitting diode of claim 11, wherein: The sizes of the plurality of second openings are the same.

13. The light emitting diode of claim 11, wherein: The sizes of the plurality of second openings gradually increase along the extension direction gradually away from the second electrode pad portion.

14. The light emitting diode of claim 11, wherein: The second openings have a spacing, and the sizes of the spacing are the same.

15. The light emitting diode of claim 11, wherein: The second openings have a spacing, and the sizes of the spacing gradually decrease along the extension direction gradually away from the second electrode pad portion.

16. The light emitting diode of claim 11, wherein: The second opening comprises a plurality of first opening portions of the same size and at least one second opening portion, the second opening portion is arranged below the second end of the second electrode extension portion, is arranged corresponding to the insulating layer, and the size of the second opening portion is greater than the size of the first opening portion.

17. The light emitting diode of claim 16, wherein: The width of the insulating layer is greater than or equal to the width of the second opening portion.

18. The light emitting diode of claim 16, wherein: The ratio of the area of the insulating layer to the area of the second opening portion ranges from 10% to 200%.

19. The light emitting diode of claim 1, wherein: The light emitting diode further comprises a first electrode, the first electrode comprises a pad portion and an extension portion, the pad portion of the first electrode is located on the first semiconductor layer, the extension portion of the first electrode is located on the second semiconductor layer and forms an ohmic contact with the first semiconductor layer through a series of through holes penetrating the second semiconductor layer and the light emitting layer, and the protection layer is arranged between the first electrode extension portion and the second semiconductor layer.

20. A light-emitting device, characterized in that: The light emitting diode as claimed in any one of claims 1-19 is adopted.

Images