Semiconductor epitaxial structure and LED chip

By introducing a gate-clearing layer into the epitaxial structure of GaN-based LEDs and controlling the concentration of N-type dopant, the gate-clearing effect caused by V-type defects was solved, thereby improving the luminous efficiency and brightness stability of the LEDs.

WO2026081082A1 Publication Date: 2026-04-23XIAMEN SANAN OPTOELECTRONICS CO LTD
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Patent Information

Application Number
PCT/CN2024/125017
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-10-15
Publication Date
2026-04-23

AI Technical Summary

Technical Problem

In the process of improving the luminous efficiency of GaN-based LEDs, existing technologies have led to an increase in carbon impurity doping concentration by creating V-shaped defects in the active layer, resulting in a thyristor effect that affects the performance of the LED.

Method used

By introducing a gate-free layer into the semiconductor epitaxial structure, the doping concentration of N-type dopants is controlled to be higher than that of carbon impurities. While retaining V-type defects, the gate-free effect is avoided by controlling the growth process, thereby enhancing hole injection efficiency.

Benefits of technology

It effectively avoids the generation of thyristor effect, improves the luminous efficiency and overall luminous quality of LED, and ensures brightness stability under high current conditions.

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Abstract

The present invention relates to the technical field of semiconductor manufacturing, and particularly relates to a semiconductor epitaxial structure, which comprises a first semiconductor layer, an active layer and a second semiconductor layer, which are sequentially stacked from bottom to top, wherein the first semiconductor layer comprises a gate elimination layer; the semiconductor epitaxial structure is provided with a V-shaped defect, which extends from the gate elimination layer to the active layer; the first semiconductor layer is an N-type doped layer and is doped with a carbon impurity; and the doping concentration of an N-type dopant in the gate elimination layer is greater than the doping concentration of the carbon impurity in the gate elimination layer. In the present invention, a gate elimination layer is added while retaining a V-shaped defect in a semiconductor epitaxial structure, and by means of controlling growth process conditions, the doping concentration of an N-type dopant in the gate elimination layer is greater than the doping concentration of a carbon impurity therein, and thus the thyristor effect caused by the growth of the V-shaped defect is avoided; moreover, it is ensured that holes are injected via sidewalls of the V-shaped defect, and thus the difficulty of hole injection is reduced and the efficiency of hole injection is improved, thereby significantly enhancing the light-emission efficiency of an LED.
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