Imaging element and electronic apparatus

Abstract

The present technology relates to an imaging element and an electronic device that make it possible to acquire phase difference information in accordance with a wide range of incidence angles. The present invention includes a pixel array unit in which a plurality of pixels are arranged in a matrix. Each of the pixels includes a photoelectric conversion unit, a first lens that is positioned closer to a light incidence side than the photoelectric conversion unit and refracts light, and a second lens that is positioned closer to the light incidence side than the first lens. The first lens is disposed so as to be offset in a planar direction of the pixel array unit by a first offset amount corresponding to the image height of the pixel array unit. The second lens is disposed so as to be offset in the planar direction of the pixel array unit by a second offset amount larger than the first offset amount. The first lens is provided at a size corresponding to the image height of the pixel array unit. The present technology can be applied to an imaging element that detects a phase difference.

Description

Imaging device, electronic device

[0001] The present technology relates to an imaging device and an electronic device, and for example, relates to an imaging device and an electronic device that can detect focus more accurately without degrading image quality.

[0002] In the autofocus method in a digital camera, there are mainly a contrast method and a phase difference method. The phase difference method is a method in which an image is decomposed into two images using a secondary imaging lens, and the amount of defocus is detected from the interval between the two images.

[0003] In the case of the phase difference method, images formed by light passing through different parts of the lens, for example, the right and left sides of the lens, are used for each light beam. Image plane phase difference autofocus performs autofocus by the phase difference method using an imaging device. An on-chip lens for light collection is provided in the imaging device, and an imaging device for phase difference autofocus can be obtained by adding an aperture member that restricts the light incident on this on-chip lens (for example, see Patent Document 1).

[0004] Japanese Patent Application Laid-Open No. 2011-165736

[0005] In the image plane phase difference method, an aperture member that restricts the light incident on the on-chip lens, for example, a light shielding film, is provided, and the amount of light incident on the imaging device is restricted, so the sensitivity deteriorates. The incident angle of light is different between the image height center of the pixel array and the high image height away from the image height center, and the sensitivity of the imaging device arranged at the high image height may be lower than the sensitivity of the imaging device arranged at the image height center.

[0006] It is desired to perform appropriate pupil correction so that the sensitivity of the imaging device arranged at the high image height does not decrease below the sensitivity of the imaging device arranged at the image height center.

[0007] The present technology has been made in view of such a situation, and aims to perform more appropriate pupil correction.

[0008] One aspect of this technology is a first image sensor comprising a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a photoelectric conversion portion, a first lens located on the light incident side of the photoelectric conversion portion and refracting light, and a second lens located on the light incident side of the first lens, wherein the first lens is positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, and the second lens is positioned offset in the planar direction of the pixel array portion by a second offset amount larger than the first offset amount, and the first lens is provided with a size corresponding to the image height of the pixel array portion.

[0009] One aspect of this technology is an image sensor comprising a pixel array section in which a plurality of pixels are arranged in a matrix, the pixels comprising a photoelectric conversion section, a first lens located on the light incident side of the photoelectric conversion section and refracting light, and a second lens located on the light incident side of the first lens, the first lens being positioned offset in the planar direction of the pixel array section by a first offset amount corresponding to the image height of the pixel array section, the second lens being positioned offset in the planar direction of the pixel array section by a second offset amount larger than the first offset amount, and the first lens being provided in a size corresponding to the image height of the pixel array section, and a processing unit for processing signals from the image sensor.

[0010] A second image sensor, representing one aspect of this technology, comprises a pixel array section in which a plurality of pixels are arranged in a matrix, and each pixel comprises a plurality of photoelectric conversion sections, a first lens located on the light incident side of the photoelectric conversion section and refracting light, and a light-shielding section provided between adjacent photoelectric conversion sections, wherein the first lens is positioned offset in the planar direction of the pixel array section by a first offset amount corresponding to the image height of the pixel array section, and the light-shielding section is provided with a size corresponding to the image height of the pixel array section.

[0011] A second electronic device, representing one aspect of this technology, is an electronic device comprising an image sensor and a processing unit for processing signals from the image sensor. The image sensor comprises a pixel array section in which a plurality of pixels are arranged in a matrix, and each pixel includes a plurality of photoelectric conversion sections, a first lens located on the light incident side of the photoelectric conversion section and refracting light, and a light-shielding section provided between adjacent photoelectric conversion sections, the first lenses being positioned offset in the planar direction of the pixel array section by a first offset amount corresponding to the image height of the pixel array section, and the light-shielding section being provided with a size corresponding to the image height of the pixel array section.

[0012] In a first image sensor, which is one aspect of this technology, a pixel array is provided in which a plurality of pixels are arranged in a matrix. Each pixel includes a photoelectric conversion unit, a first lens located on the light incident side of the photoelectric conversion unit and refracting light, and a second lens located on the light incident side of the first lens. The first lens is positioned offset in the planar direction of the pixel array by a first offset amount corresponding to the image height of the pixel array, and the second lens is positioned offset in the planar direction of the pixel array by a second offset amount larger than the first offset amount. The first lens is provided with a size corresponding to the image height of the pixel array.

[0013] In one aspect of this technology, the first electronic device is configured to include the first image sensor.

[0014] In a second image sensor, which is one aspect of this technology, a pixel array is provided in which a plurality of pixels are arranged in a matrix, and each pixel is provided with a plurality of photoelectric conversion units, a first lens located on the light incident side of the photoelectric conversion unit that refracts light, and a light-shielding unit provided between adjacent photoelectric conversion units, the first lens is positioned offset in the planar direction of the pixel array by a first offset amount corresponding to the image height of the pixel array, and the light-shielding unit is provided with a size corresponding to the image height of the pixel array.

[0015] In a second electronic device, which is one aspect of this technology, the second image sensor is provided.

[0016] Furthermore, electronic devices may be independent devices or internal blocks that make up a single device.

[0017] This figure shows an imaging mechanism including an image sensor related to this technology. This figure shows the configuration of the image sensor. This figure is for explaining the position of the image height. This figure shows an example of the cross-sectional configuration of a normal pixel. This figure shows an example of the cross-sectional configuration of a pixel for phase difference detection. This figure is for explaining the incident angle response of the image plane phase difference. This figure shows the cross-sectional configuration of a pixel in the first embodiment. This figure shows another cross-sectional configuration of a pixel in the first embodiment. This figure is for explaining the region where pupil correction is applied. This figure is for explaining the incident angle response of the image plane phase difference. This figure is for explaining the manufacturing of the inner lens. This figure shows an example of the cross-sectional configuration of a pixel in the second embodiment. This figure shows an example of the cross-sectional configuration of a pixel in the third embodiment. This figure shows an example of the cross-sectional configuration of a pixel in the fourth embodiment. This figure shows an example of the planar configuration of a pixel. This figure shows an example of the cross-sectional configuration of a pixel in the fifth embodiment. This figure shows an example of the schematic configuration of an endoscopic surgery system. This block diagram shows an example of the functional configuration of a camera head and a CCU. This block diagram shows an example of the schematic configuration of a vehicle control system. This is an explanatory diagram showing an example of the installation position of the external information detection unit and the imaging unit.

[0018] The following describes the embodiments for implementing this technology.

[0019] <Configuration of the Imaging Device> The technology described below can be applied to the autofocus mechanism of digital cameras and the like. While there are mainly two types of autofocus methods, contrast-detection and phase-detection, this technology can be applied to the phase-detection method, and the following explanation will use image-plane phase-detection autofocus as an example.

[0020] Image plane phase-detection autofocus is applicable to a wide range of electronic devices that use semiconductor packages in their image acquisition (photoelectric conversion) units, including imaging devices such as digital still cameras and video cameras, mobile terminal devices with imaging capabilities such as mobile phones, and photocopiers that use imaging devices in their image reading units.

[0021] Figure 1 is a block diagram showing an example of the configuration of an electronic device related to this technology, such as an imaging device. As shown in Figure 1, the imaging device 10 related to this technology includes an optical system including a lens group 21, an image sensor (imaging device) 22, a DSP (Digital Signal Processor) circuit 23, a frame memory 24, a display unit 25, a recording unit 26, an operation unit 27, and a power supply unit 28. The DSP circuit 23, frame memory 24, display unit 25, recording unit 26, operation unit 27, and power supply unit 28 are interconnected via a bus line 29.

[0022] The lens group 21 captures incident light (image light) from the subject and forms an image on the imaging surface of the image sensor 22. The image sensor 22 converts the amount of incident light formed on the imaging surface by the lens group 21 into an electrical signal on a pixel-by-pixel basis and outputs it as a pixel signal.

[0023] The DSP circuit 23 processes signals from the image sensor 22. For example, as will be described in detail later, the image sensor 22 has pixels for detecting focus, and it processes signals from such pixels to perform focus detection. The image sensor 22 also has pixels for constructing an image of the captured subject, and it processes signals from such pixels and expands them into the frame memory 24.

[0024] The display unit 25 consists of a panel-type display device such as a liquid crystal display device or an organic EL (electroluminescence) display device, and displays a video or still image captured by the image sensor 22. The recording unit 26 records the video or still image captured by the image sensor 22 onto a recording medium.

[0025] The operation unit 27 issues operation commands for various functions of the imaging device under the user's control. The power supply unit 28 appropriately supplies various power sources to the DSP circuit 23, frame memory 24, display unit 25, recording unit 26, and operation unit 27.

[0026] <Example of Image Sensor Configuration> Figure 2 shows a schematic configuration of the image sensor 22. The image sensor 22 in Figure 2 is configured with a pixel array section 33 in which pixels 32 are arranged in a matrix in a two-dimensional manner on a semiconductor substrate 42 using silicon (Si) as the semiconductor, and a peripheral circuit section around it. The peripheral circuit section includes a vertical drive circuit 34, a column signal processing circuit 35, a horizontal drive circuit 36, an output circuit 37, a control circuit 38, and the like.

[0027] Pixel 32 has a photodiode as a photoelectric conversion element and a plurality of pixel transistors. The plurality of pixel transistors are composed of four MOS transistors, for example, a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor.

[0028] Pixel 32 can also be a shared pixel structure. This shared pixel structure consists of multiple photodiodes, multiple transfer transistors, one shared floating diffusion region, and one other shared pixel transistor. In other words, in a shared pixel structure, the photodiodes and transfer transistors that make up multiple unit pixels share one other pixel transistor.

[0029] The control circuit 38 receives an input clock and data that commands the operating mode, and outputs data such as internal information of the image sensor 22. Specifically, the control circuit 38 generates clock signals and control signals that serve as the reference for the operation of the vertical drive circuit 34, column signal processing circuit 35, and horizontal drive circuit 36, etc., based on the vertical synchronization signal, horizontal synchronization signal, and master clock. The control circuit 38 then outputs the generated clock signals and control signals to the vertical drive circuit 34, column signal processing circuit 35, and horizontal drive circuit 36, etc.

[0030] The vertical drive circuit 34 is configured, for example, by a shift register, and selects a predetermined pixel drive wiring 40, supplies pulses to the selected pixel drive wiring 40 to drive the pixels 32, and drives the pixels 32 row by row. That is, the vertical drive circuit 34 sequentially selects and scans each pixel 32 of the pixel array section 33 vertically row by row, and supplies a pixel signal based on the signal charge generated in the photoelectric conversion section of each pixel 32 according to the amount of light received to the column signal processing circuit 35 through the vertical signal line 39.

[0031] The column signal processing circuit 35 is arranged, for example, for each column of pixels 32, and performs signal processing such as noise reduction on the signals output from one row of pixels 32 for each pixel column. The column signal processing circuit 35 performs signal processing such as CDS (Correlated Double Sampling) and AD conversion to remove pixel-specific fixed pattern noise.

[0032] The horizontal drive circuit 36 ​​is configured, for example, by a shift register, and sequentially outputs horizontal scanning pulses to select each of the column signal processing circuits 35 in order, causing each of the column signal processing circuits 35 to output a pixel signal to the horizontal signal line 41.

[0033] The output circuit 37 processes the signals sequentially supplied from each of the column signal processing circuits 35 through the horizontal signal line 41 and outputs them. The output circuit 37 may, for example, only perform buffering, or it may perform black level adjustment, column variation correction, various digital signal processing, etc. The input / output terminal 43 exchanges signals with the outside.

[0034] The image sensor 22 configured as described above is a CMOS image sensor called a column AD type, in which a column signal processing circuit 35 that performs CDS processing and AD conversion processing is arranged for each pixel row.

[0035] <Regarding Image Height> Figure 3 is a plan view of a pixel array 33 having multiple pixels, viewed from a direction perpendicular to the surface of the semiconductor substrate 42 constituting the pixel array 33, that is, the light-receiving surface of the pixel array 33 (hereinafter also referred to as the optical axis direction).

[0036] In Figure 3, position P11 in the pixel array section 33 is the central position on the light-receiving surface of the pixel array section 33, i.e., the position of the image height center. Position P12, located to the right of position P11 in the figure, is a position on the image height edge side (high image height side) away from the image height center, i.e., a position on the edge side of the light-receiving surface of the pixel array section 33.

[0037] It is known that at positions on the light-receiving surface of the image sensor 22 that are far from the image height center, i.e., at high image height positions, the angle of incidence of light incident on the pixel 32 increases, reducing the amount of light incident on the pixel 32 and thus decreasing pixel sensitivity. In other words, there is a possibility that the characteristics of the image sensor 22 will deteriorate. Therefore, as a correction to suppress such a decrease in pixel sensitivity, an embodiment of pupil correction is described below, in which the position of the on-chip lens 65 and the color filter 64 (both in Figure 4) is shifted by a width corresponding to the image height.

[0038] <Example of Pixel Configuration> Referring to Figures 4 and 5, the configuration of pixels 32 arranged in the pixel array section 33 will be described. The pixel array section 33 includes normal pixels (hereinafter referred to as normal pixels 32 as appropriate) that output pixel signals for generating image data, and phase difference detection pixels (hereinafter referred to as phase difference detection pixels 32 as appropriate) that output pixel signals for use in phase difference detection AF (autofocus). There may also be phase difference detection pixels 32 that also function as normal pixels 32.

[0039] Figure 4 shows an example of the cross-sectional configuration of two normal pixels 32-1 and 32-2, which are among a plurality of pixels 32 arranged in an array in the pixel array section 33 (Figure 2). Hereafter, when it is not necessary to distinguish between normal pixels 32-1 and 32-2, they will simply be referred to as normal pixels 32, and the parts constituting normal pixels 32 will also be referred to in the same way.

[0040] Figure 4 shows an example of the cross-sectional configuration of a normal pixel 32. As shown in Figure 4, the normal pixel 32 is constructed by stacking a semiconductor substrate 51, a planarization film 52, a filter layer 53, and an on-chip lens layer 54 in order from the bottom. For example, the normal pixel 32 is a back-illuminated CMOS image sensor in which light is irradiated to the back surface of the semiconductor substrate 51, which is opposite to the front surface. Each normal pixel 32 is provided with a photoelectric conversion unit 61, an inner lens 63, a color filter 64, and an on-chip lens 65.

[0041] The semiconductor substrate 51 corresponds to the semiconductor substrate 42 in Figure 2. The semiconductor substrate 51 is made of, for example, a wafer made by thinly slicing single-crystal silicon, and a photoelectric conversion unit 61 that converts light incident via a filter layer 53 into electric charge is provided for each normal pixel 32. The semiconductor substrate 51 may also have a structure in which an inter-pixel isolation unit is provided between the photoelectric conversion units 61 of adjacent normal pixels 32 to electrically isolate each photoelectric conversion unit 61. The material used as the photoelectric conversion unit 61, that is, the material that converts light into electric charge, can be silicon (Si), germanium (Ge), CIGS (Copper Indium Gallium Selenide), InGaAs (Indium Gallium Arsenide), etc.

[0042] The planarization film 52 is constructed by forming an inner lens 63 and a light-shielding wall 72 inside a transparent resin layer 62, which is used to planarize the light-receiving surface, the surface on which the photoelectric conversion section 61 of the semiconductor substrate 51 receives light. Instead of the transparent resin layer 62, a transparent insulating film can be used, or a combination of a transparent insulating film and a resin layer can be used. As will be described later, when pupil correction is applied, the light-shielding wall 72 is composed of a light-shielding wall 72a provided in the resin layer 62 and a light-shielding wall 72b provided between the inner lenses 63.

[0043] The inner lens 63 is configured to be, for example, a convex lens and is formed of, for example, a nitride film. The inner lens 63 is provided for each normal pixel 32 and condenses the light transmitted through the filter layer 53 at the center of the photoelectric conversion unit 61. The light shielding wall 72 is provided between adjacent normal pixels 32, shields the obliquely incident light transmitted through the filter layer 53, and prevents the light from mixing into other adjacent normal pixels 32, and / or functions as a waveguide for guiding the incident light to the photoelectric conversion unit 61.

[0044] A light shielding film 73 is provided in a direction (XY plane direction) perpendicular to the light shielding wall 72 between the light incident surface of the photoelectric conversion unit 61 and the light shielding wall 72. The light shielding film 73, like the light shielding wall 72, is provided between adjacent normal pixels 32, shields the obliquely incident light transmitted through the filter layer 53, and prevents the light from mixing into other adjacent normal pixels 32.

[0045] The filter layer 53 is configured by planar arrangement of color filters 64 that transmit light in a wavelength range corresponding to the color received by each normal pixel 32, for each normal pixel 32.

[0046] The on-chip lens layer 54 is configured by planar arrangement of on-chip lenses 65 that condense the light irradiated to the imaging element 22, for each normal pixel 32. The on-chip lens 65 is configured to be, for example, a convex lens and is formed of an organic material such as resin.

[0047] <Configuration Example of Phase Difference Detection Pixel> FIG. 5 is a diagram showing a cross-sectional configuration example of the phase difference detection pixel 32. Since the basic configuration of the phase difference detection pixel 32 is the same as that of the normal pixel 32 shown in FIG. 4, the same reference numerals are given to the same parts as those of the normal pixel 32 shown in FIG. 4, and the description will be omitted as appropriate.

[0048] The phase difference detection pixel 32 shown in FIG. 5 is different from the normal pixel 32 shown in FIG. 4 in that the light shielding film 73a provided between the phase difference detection pixel 32-1 and the phase difference detection pixel 32-2 extends to the central portions thereof, and the other points are the same.

[0049] In the figure, the right side of the phase difference detection pixel 32-1 is a right-side shading pixel, which is shielded from light by the light-shielding film 73a, and the left side of the phase difference detection pixel 32-2 is a left-side shading pixel, which is shielded from light by the light-shielding film 73a.

[0050] The right-side shading pixel has a structure in which the right side is shaded, and the left-side shading pixel has a structure in which the left side is shaded. The right-side and left-side shading pixels are used as a pair of phase difference detection pixels. By shading either the right or left side, the system is configured to enable the selection of the angle of incident light for reception.

[0051] In the example shown in Figure 5, the case where the pair of phase difference detection pixels are located next to each other was explained, but the phase difference detection pixels 32 may be located at different, separate positions.

[0052] Within the pixel array section 33, a predetermined number of pixels 32 are assigned as phase difference detection pixels 32. Multiple phase difference detection pixels 32 are provided at predetermined positions within the pixel array section 33.

[0053] By providing a pixel with its right side shielded, such as the phase difference detection pixel 32-1, and a pixel with its left side shielded, such as the phase difference detection pixel 32-2, it becomes possible to separate and receive light coming from the left and right sides of the lens group 21 (Figure 1). By receiving the light coming from the left and right sides of the lens group 21 with their respective photoelectric conversion units 61, the focus position can be detected.

[0054] When the image is back-focused or front-focused, the output from the photoelectric converter 61-1, which is shielded on the right side, and the output from the photoelectric converter 61-2, which is shielded on the left side, do not match (the outputs of the paired phase difference detection pixels do not match). However, when the image is in focus, the outputs from the two photoelectric converters 61-1 and 61-2 match (the outputs of the paired phase difference detection pixels match). When it is determined that the image is back-focused or front-focused, the lens group 21 is moved to the position where it is in focus, thereby enabling focus detection.

[0055] Figure 6 is a graph showing the incident angle response of the image plane phase difference, where the vertical axis represents the output values ​​from the phase difference detection pixels 32-1 and 32-2, and the horizontal axis represents the incident angle. The graph shown in Figure 6A is obtained by the phase difference detection pixel 32 located at the center of the image height (position P11 in Figure 3), and the graph shown in Figure 6B is obtained by the phase difference detection pixel 32 located at the high image height side (position P12 in Figure 3).

[0056] Referring to Figure 6A, it can be seen that there are peaks at incident angles of -a degrees and a degrees. Thus, the phase difference detection pixels 32-1 and 32-2 can obtain the largest output with incident light around an incident angle of -a degrees (a degrees). Similarly, referring to Figure 6B, it can be seen that there are peaks at incident angles of b-a' degrees and b+a' degrees, and the phase difference detection pixels 32-1 and 32-2, which are located on the high image height side, can obtain the largest output with incident light around incident angles of b-a' degrees and b+a' degrees.

[0057] However, for incident light with an incident angle of a degree (b + a' degree) or greater, for example, the output value becomes small, making it difficult to detect the phase difference. In the graph shown in Figure 6, phase difference information can be obtained within the range of incident angles where a sloped graph is obtained, i.e., within the range from -a degree to a degree at the center of the image height, and within the range from b - a' degree to b + a' degree at the higher image height side. However, at incident angles where a graph with no (small) slope is obtained, it is difficult to obtain phase difference information.

[0058] A lens group 21 (Figure 1) is provided on the on-chip lens 65 (on the light incident surface side), in other words, perpendicular to the XY plane of the pixel array section 33 (Figure 2). If the lens group 21 is a fixed lens fixed to the housing of the imaging device 10, then, for example, pupil correction is performed to obtain optimal characteristics for that fixed lens.

[0059] If the lens group 21 is an interchangeable lens system that can be detachably attached to the housing of the imaging device 10, for example, pupil correction may be applied to obtain optimal characteristics for a predetermined lens among the multiple lenses. In order to accommodate a wide range of lenses that may be replaced, it is desirable to be able to perform phase difference detection in response to a wide angle of incidence.

[0060] Furthermore, if the lens group 21 is, for example, a zoom lens, there is a possibility that the principal ray angle (CRA) may switch from a wide-angle lens side with a large principal ray angle to a telephoto lens side with a small principal ray angle, potentially causing a significant change in the principal ray angle. A larger principal ray angle can potentially increase the range of incident angles of light incident on the phase difference detection pixels. This effect is more pronounced at higher image heights, so it is particularly desirable to enable phase difference detection that can handle a wide range of incident angles at higher image heights.

[0061] In the graph obtained at the high image height side shown in Figure 6B, the range of incident angles in which a sloped graph is obtained, corresponding to 2a' from b-a' to b+a' in Figure 6B, is widened, enabling phase difference detection in response to a wide range of incident angles. The structure of the pixel 32 that enables phase difference detection in response to a wide range of incident angles will be explained below.

[0062] <First Embodiment> Figure 7 is a diagram showing an example of the cross-sectional configuration of a phase difference detection pixel 32 according to the first embodiment.

[0063] Figure 7A shows an example of the cross-sectional configuration of a phase difference detection pixel 32 located at the center of the image height, and Figure 7B shows an example of the cross-sectional configuration of a phase difference detection pixel 32 located on the high image height side.

[0064] The example cross-sectional configuration of the phase difference detection pixel 32 located at the image height center, shown in Figure 7A, is the same as that of the phase difference detection pixel 32 shown in Figure 5, so its explanation is omitted.

[0065] When pupil correction is applied to the phase difference detection pixels 32, the center of the on-chip lens 65, the center of the color filter 64, and the center of the inner lens 63 differ between the phase difference detection pixels 32 located at the image height center (position P11) and the phase difference detection pixels 32 located at the high image height (position P12), and are positioned in locations suitable for the incident direction and incident angle of the incident light, respectively.

[0066] Referring to the example cross-sectional configuration of the phase difference detection pixel 32 located at the image height center (position P12) shown in Figure 7A, as indicated by the arrows in the figure, incident light enters the phase difference detection pixel 32 from directly above, passing through the center of the on-chip lens 65, the center of the color filter 64, and the center of the inner lens 63c before entering the photoelectric conversion unit 61.

[0067] In the phase difference detection pixel 32 located at the center of the image height, the on-chip lens 65, the color filter 64, and the inner lens 63c are arranged so that their centers coincide.

[0068] Referring to the phase difference detection pixel 32 located at the high image height (position P12) shown in Figure 7B, as indicated by the arrow in the figure, incident light enters the phase difference detection pixel 32 from the upper left direction in the figure. The on-chip lens 65, color filter 64, and inner lens 63c are arranged to match this direction of incidence.

[0069] In the phase difference detection pixels 32 arranged at the high image height (position P12) shown in Figure 7B, the light-shielding walls 72a within the resin layer 62 provided on the light incident surface side of the photoelectric conversion unit 61 are provided between pixels, just like the phase difference detection pixels 32 located at the center of the image height, and are configured so that the center between the light-shielding walls 72a substantially coincides with the center of the photoelectric conversion unit 61.

[0070] In the phase difference detection pixel 32, which is positioned at a high image height as shown in Figure 7B, light is incident from the upper left direction. Therefore, the inner lens 63d provided on the resin layer 62 is positioned to the left in the figure.

[0071] The inner lens 63c is positioned such that the center of the inner lens 63d, which is located on the high image height side, is shifted by a predetermined amount toward the image height center compared to the center of the photoelectric conversion unit 61. The predetermined amount of shift is set according to the image height.

[0072] The light-shielding walls 72b, located at both ends of the inner lens 63d positioned on the high-image-height side, are also positioned at a location shifted by the same amount as the shift of the inner lens 63d. Therefore, they are positioned to the left in the figure compared to the light-shielding wall 72a within the resin layer 62. The light-shielding walls 72b and the inner lens 63d are positioned such that the center of the inner lens 63d approximately coincides with the center between the light-shielding walls 72b.

[0073] The color filter 64, which is placed on the inner lens 63d, is positioned to the left in the diagram by approximately the same amount of displacement as the inner lens 63d (the amount of displacement of the light-shielding wall 72b).

[0074] The on-chip lens 65, which is mounted on the color filter 64, is positioned to the left in the figure by a larger displacement than the displacement of the inner lens 63d (the displacement of the light-shielding wall 72b). The on-chip lens 65 is positioned closer to the center of the image height than the inner lens 63d.

[0075] Here, the amount of displacement of the center positions of the on-chip lens 65, color filter 64, and inner lens 63d from the center position of the photoelectric conversion unit 61 within the same phase difference pixel 32, that is, the distance by which their arrangement positions are shifted, will be called the pupil correction amount. When focusing on the phase difference detection pixel 32, the correction amount of the on-chip lens 65 is larger than the correction amount of the color filter 64, while the correction amounts of the color filter 64 and the inner lens 63d are considered to be the same.

[0076] Thus, the phase difference detection pixels 32, which are located on the image height side, are arranged such that the on-chip lens 65, color filter 64, and inner lens 63d are shifted toward the center of the image height. At high image height (position P12), the incident light on the pixel array 33 enters the pixels from the upper left to the lower right in Figure 7, so pupil correction is performed with a correction amount corresponding to the angle of incidence of the light. By performing pupil correction, more light can be incident on the photoelectric conversion unit 61, thereby improving pixel sensitivity. In other words, the sensor characteristics can be improved.

[0077] The phase difference detection pixel 32 shown in Figure 7 is equipped with two lenses, an on-chip lens 65 and an inner lens 63, and is configured so that the incident light is focused onto the photoelectric conversion unit 61 by these two lenses. As described above, the on-chip lens 65 and the inner lens 63 are positioned to optimally receive incident light on the imaging plane (XY plane) of the pixel array unit 33 (Figure 1) through pupil correction. Furthermore, pupil correction is also applied to the inner lens 63 in the direction perpendicular to the imaging plane (XY plane) of the pixel array unit 33 (Figure 1) (Z axis direction).

[0078] In this specification, when it is not necessary to distinguish between pupil correction performed on the imaging plane (XY plane) and pupil correction performed in the vertical direction (Z axis direction), the term "pupil correction" is used. Furthermore, in this specification, pupil correction also refers to the combined correction of pupil correction performed on the imaging plane (XY plane) and pupil correction performed in the vertical direction (Z axis direction).

[0079] When comparing the inner lens 63c of the phase difference detection pixel 32 located at the center of the image height as shown in Figure 7A with the inner lens 63d of the phase difference detection pixel 32 located at the high image height as shown in Figure 7B, the inner lens 63d is formed to be smaller than the inner lens 63c. When the inner lens 63 is formed to be smaller, it means that in the height direction it is formed to be smaller in height (thinner in thickness), and / or that it is formed to be smaller in radius (smaller in width in cross-sectional view).

[0080] The inner lens 63 is formed such that its curvature differs depending on the position where the phase-difference detection pixels 32 are located within the pixel array 33. By adjusting the curvature of the inner lens 63 according to the image height, the focal position is adjusted to achieve the optimal focal position at the image height where the phase-difference detection pixels 32 are located.

[0081] In Figure 7, an example was given showing that, as a result of adjusting the curvature, the inner lens 63d of the phase difference detection pixel 32 located at a higher image height is smaller than the inner lens 63c located at the center of the image height. However, as shown in Figure 8, the inner lens 63d of the phase difference detection pixel 32 located at a higher image height may be larger than the inner lens 63c located at the center of the image height.

[0082] Figure 8A, like Figure 7A, shows the cross-sectional configuration of the phase difference detection pixel 32 located at the center of the image height. The inner lens 63e of the phase difference detection pixel 32 shown in Figure 8A is smaller than the inner lens 63c of the phase difference detection pixel 32 shown in Figure 7A.

[0083] Figure 8B, like Figure 7B, shows the cross-sectional configuration of a phase-difference detection pixel 32 located at a high image height. The inner lens 63f of the phase-difference detection pixel 32 shown in Figure 8B is larger than the inner lens 63d of the phase-difference detection pixel 32 shown in Figure 7B.

[0084] Comparing the phase difference detection pixels 32 shown in Figure 8A and Figure 8B, the inner lens 63f of the phase difference detection pixel 32 located on the high image height side is larger than the inner lens 63e of the phase difference detection pixel 32 located at the center of the image height. In this case as well, the curvature of the inner lens 63 is adjusted according to the image height so that it is adjusted to the optimal focal position at the image height where the phase difference detection pixel 32 is located.

[0085] The inner lens 63 of the phase difference detection pixel 32 is formed to gradually increase or decrease in size as it moves from the center of the image height towards the higher image height side.

[0086] In the following explanation, we will use the example of a case where the inner lens 63 of the phase difference detection pixel 32 on the high image height side, as described with reference to Figure 7, is formed to be smaller than the inner lens 63 of the phase difference detection pixel 32 at the center of the image height.

[0087] The phase difference detection pixel 32 is thought to be more affected by the principal ray angle of incident light compared to the uncovered normal pixel 32, because about half of the light incident surface side of the photoelectric conversion unit 61 is covered by the light-shielding film 74. Therefore, although the explanation here uses the case of performing pupil correction on the phase difference detection pixel 32, which is more affected, the same pupil correction may be performed on the normal pixel 32 as well.

[0088] The pupil correction described above can be configured to be applied only to the phase difference detection pixels 32, for example, as shown in Figure 9A. In Figure 9, the area enclosed by the thick rectangle indicates where pupil correction is applied.

[0089] Referring to Figure 9A, if phase difference detection pixels 32 are arranged at predetermined positions in each row L1 to L5 of the pixel array section 33, pupil correction can be applied to the arranged phase difference detection pixels 32 in the XY plane and the Z axis direction, while pupil correction can not be applied to the normal pixels 32 in the same row.

[0090] "No pupil correction is applied" includes cases where pupil correction (pupil correction in the Z-axis direction) is not applied, in which the curvature of the inner lens 63 is adjusted according to the image height, but pupil correction is applied to the inner lens 63, on-chip lens 65, and color filter 64 in the XY plane.

[0091] In all cases A, B, and C of Figure 9, pupil correction is applied to the inner lens 63, on-chip lens 65, and color filter 64 in the XY plane for the normal pixels located in the pixel array section 33.

[0092] As shown in Figure 9B, the pupil correction in the XY plane and Z axis direction can also be applied to the phase difference detection pixels 32 and normal pixels 32 located in the row where the phase difference detection pixels 32 are located. In the example shown in Figure 9B, phase difference detection pixels 32 are located in each row from row L1 to row L5 of the pixel array section 33, and pupil correction in the XY plane and Z axis direction is applied to the phase difference detection pixels 32 and normal pixels 32 located in rows L1 to row L5.

[0093] As shown in Figure 9C, all pixels 32 in the normal pixel area 32 and the phase difference detection pixels 32 arranged in the pixel array section 33 may be subject to pupil correction in the XY plane and the Z axis direction. In the example shown in Figure 9C, phase difference detection pixels 32 are arranged in each row from row L1 to row L5 of the pixel array section 33, and pupil correction in the XY plane and the Z axis direction is applied to all phase difference detection pixels 32 and normal pixels 32 arranged in the pixel array section 33 including rows L1 to L5.

[0094] In this explanation, we have used an example where the phase difference detection pixels 32 are arranged in rows L1 to L5. However, the arrangement of the phase difference detection pixels 32 is not limited to this example. For example, they may also be arranged in the column direction, and the phase difference detection pixels 32 and normal pixels 32 arranged in the column direction may also be subject to pupil correction.

[0095] In this way, when pupil correction is performed on the inner lens 63 to adjust the curvature according to the image height, a graph representing the incident angle response of the image plane phase difference is obtained, as shown in Figure 10. The graph shown in Figure 10 is, for example, a graph representing the incident angle response of the image plane phase difference obtained at the phase difference detection pixel 32 located on the high image height side as shown in Figure 7B. In the graph shown in Figure 10, the vertical axis represents the output value from the phase difference detection pixel 32, and the horizontal axis represents the incident angle.

[0096] The dotted line graph in Figure 10 shows the graph obtained by the phase difference detection pixel 32 without pupil correction as shown in Figure 7B, while the solid line graph shows the graph obtained by the phase difference detection pixel 32 with pupil correction as shown in Figure 7B. Referring to the graph obtained by the phase difference detection pixel 32 without pupil correction, shown by the dotted line, it can be seen that there are peaks at the incident angle of -b degrees and at b degrees. In this case, the incident angle for which phase difference information can be acquired is in the range of -b degrees to b degrees.

[0097] Referring to the graph obtained by the phase difference detection pixel 32, which is corrected for pupil correction and shown as a solid line, it can be seen that there are peaks at incident angles of -c degrees and c degrees. In this case, the incident angle for which phase difference information can be acquired is in the range of -c degrees to c degrees. Comparing the range from -b degrees to b degrees with the range from -c degrees to c degrees, the range from -c degrees to c degrees is wider than the range from -b degrees to b degrees.

[0098] By performing pupil correction, which includes adjusting the size (curvature) of the inner lens 63 in this way, phase difference detection becomes possible even with a wide angle of incidence.

[0099] By performing pupil correction in the XY plane of the pixel array 33, it is possible to suppress a decrease in sensitivity even at high image heights. Furthermore, as in this embodiment, by performing pupil correction in the Z axis direction (optical axis direction) as well, phase difference detection becomes possible even at high image heights and in response to a wide incident angle.

[0100] Even when the size of the inner lens 63 is adjusted according to the image height, this can be handled without increasing the number of manufacturing steps, as explained with reference to Figure 11. The inner lens 63 is manufactured using a mask 101. When manufacturing inner lenses 63 of different sizes, such as the one located at the center of the image height and the one located at the higher image height, the size of the mask 101 can be adjusted to manufacture both large and small inner lenses 63 in the same process.

[0101] In the example shown in Figure 11, the mask 101 of the inner lens 63 located at the center of the image height is formed to be larger than the mask 101 of the inner lens 63 located on the higher image height side. By manufacturing the inner lenses 63 using such masks 101, it is possible to manufacture an inner lens 63 that is larger at the center of the image height than an inner lens 63 that is larger at the higher image height side.

[0102] By adjusting the size of the mask 101, an inner lens 63 of a size corresponding to the image height can be manufactured in a single process. Therefore, even when applying the aforementioned pupil correction, it can be done without increasing the number of processes. By adjusting the size of the mask 101, large and small inner lenses 63 can be manufactured, making it possible to adjust the size of the inner lens 63 according to the image height more precisely.

[0103] <Second Embodiment> Figure 12 shows an example of a cross-sectional configuration of the phase difference detection pixel 32 in the second embodiment. In the phase difference detection pixel 32 in the second embodiment shown in Figure 12, the same reference numerals are used for parts that are the same as those in the phase difference detection pixel 32 in the first embodiment shown in Figure 7, and their descriptions are omitted as appropriate.

[0104] Figure 12A shows an example of a cross-sectional configuration of a phase difference detection pixel 32 positioned at the center of the image height, and Figure 12B shows an example of a cross-sectional configuration of a phase difference detection pixel 32 positioned at the high image height. The phase difference detection pixel 32 shown in Figure 12 differs from the phase difference detection pixel 32 in the first embodiment shown in Figure 7 in the shape of the inner lens 111, but is otherwise the same.

[0105] The inner lens 111 of the phase difference detection pixel 32 shown in Figure 12 has a shape with two convex portions (a shape with one concave portion) in cross-sectional view, and has the function of scattering incident light. The inner lens 111 may be formed of a light-scattering material. The concave portion provided in the central part of the inner lens 111 is a non-light-gathering region, and the convex portions provided at both ends of the concave portion are light-gathering regions.

[0106] Compared to the inner lens 111 of the phase difference detection pixel 32 located at the center of the image plane as shown in Figure 12A, the inner lens 111 of the phase difference detection pixel 32 located on the high image height side as shown in Figure 12B is formed to be smaller. The inner lens 111 is formed to gradually decrease in size from the center of the image height towards the high image height side.

[0107] Here, we will explain using the example where the inner lens 111 is formed to gradually decrease in size from the center of the image height towards the higher image height side, but it can also be configured to gradually increase in size from the center of the image height towards the higher image height side.

[0108] In the example shown in Figure 12, the concave portion becomes thinner (deeper) as it moves from the center of the image height towards the higher image height side, and as the shape changes, the convex portions at both ends also become smaller.

[0109] As an example, the explanation described a case where the size of the inner lens 111 is adjusted, but the shape may also be adjusted. For example, the inner lens 111 has two protrusions, but the shape may be adjusted according to the image height, such as one protrusion becoming smaller or thinner than the other protrusion as it goes towards the higher image height, or the depth of the recess increasing.

[0110] <Third Embodiment> Figure 13 is a diagram showing an example of the cross-sectional configuration of a pixel 32 in the third embodiment. In the pixel 32 in the third embodiment shown in Figure 13, the same reference numerals are used for parts that are the same as those in the first embodiment shown in Figure 7, and their descriptions are omitted as appropriate. Figure 13A shows an example of the cross-sectional configuration of a phase difference detection pixel 32 located at the center of the image height, and Figure 13B shows an example of the cross-sectional configuration of a phase difference detection pixel 32 located at the high image height.

[0111] The phase difference detection pixel 32 shown in Figure 13 differs from the phase difference detection pixel 32 in the first embodiment shown in Figure 7 in that one phase difference detection pixel 32 has two photoelectric conversion units 61, and a light-shielding film 73b is provided between the photoelectric conversion units 61 on the light incident surface side, and the inner lens 63 at the center of the image height and the inner lens 63 on the high image height side have the same shape, but other aspects are the same.

[0112] Here, we will explain using the example of a case where one phase difference detection pixel 32 has two photoelectric conversion units 61, but this technology can also be applied to a configuration in which, for example, four 2x2 photoelectric conversion units 61 are included in one phase difference detection pixel 32. This technology can also be applied when one phase difference detection pixel 32 includes multiple photoelectric conversion units 61.

[0113] The phase difference detection pixel 32 shown in Figure 13 is a pixel in which a photoelectric conversion unit 61, which has a set of on-chip lens 65, color filter 64, and inner lens 63 on its upper part, is divided into two regions: the photoelectric conversion unit 61R and the photoelectric conversion unit 61L. According to the signals obtained from each of the two regions provided within the phase difference detection pixel 32, a phase difference is calculated, and autofocus is realized by adjusting the position of the lenses, etc., according to that phase difference.

[0114] A light-shielding film 73b is provided between the photoelectric conversion unit 61R and the photoelectric conversion unit 61L, on the light incident surface side of the photoelectric conversion unit 61. This light-shielding film 73b is provided to prevent incident light from leaking into the photoelectric conversion unit 61R or the photoelectric conversion unit 61L.

[0115] The light-shielding film 73c on the high-image-height side is provided with a narrower width than the light-shielding film 73b at the center of the image height. The light-shielding film 73c is formed to gradually become smaller as it moves from the center of the image height toward the high-image-height side. As shown in Figure 13B, for example, light coming from the left at an oblique direction can be prevented from hitting the light-shielding film 73c and entering the photoelectric conversion unit 61R. Furthermore, by configuring the light-shielding film 73c with a narrow width, it becomes possible to form larger openings on the light-incident surface side of both the photoelectric conversion unit 61L and the photoelectric conversion unit 61R at the high-image-height side.

[0116] <Fourth Embodiment> Figure 14 is a diagram showing an example of the cross-sectional configuration of the phase difference detection pixel 32 in the fourth embodiment. In the phase difference detection pixel 32 in the fourth embodiment shown in Figure 14, the same reference numerals are used for parts that are the same as those in the phase difference detection pixel 32 in the third embodiment shown in Figure 13, and their descriptions are omitted as appropriate. Figure 13A shows an example of the cross-sectional configuration of the phase difference detection pixel 32 located at the center of the image height, and Figure 13B shows an example of the cross-sectional configuration of the phase difference detection pixel 32 located at the high image height.

[0117] The phase difference detection pixel 32 shown in Figure 14 differs from the phase difference detection pixel 32 in the third embodiment shown in Figure 13 in that the photoelectric conversion unit 61 is provided with a photoelectric conversion unit separation unit 121 and that the light-shielding films 73b and 73c are not provided, but all other aspects are the same.

[0118] The photoelectric conversion unit separation unit 121 is provided between the photoelectric conversion units 61 in order to separate them. Specifically, the photoelectric conversion unit separation unit 121 is provided between the phase difference detection pixels 32 and between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R.

[0119] The photoelectric conversion unit separation unit 121 is provided so as to surround the photoelectric conversion unit 61 of one phase difference detection pixel 32, which is composed of a photoelectric conversion unit 61L and a photoelectric conversion unit 61R, and is provided to separate the phase difference detection pixels 32. The photoelectric conversion unit separation unit 121 is also provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R included in one phase difference detection pixel 32, and is provided to separate the photoelectric conversion unit 61L and the photoelectric conversion unit 61R.

[0120] The photoelectric conversion unit separator 121a, located between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R of the phase difference detection pixel 32 positioned at the center of the image height, is wider than the photoelectric conversion unit separator 121b, located between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R of the phase difference detection pixel 32 positioned on the higher image height side. The photoelectric conversion unit separator 121, located between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, is formed so that its width gradually narrows as it moves from the center of the image height towards the higher image height side.

[0121] As shown in Figure 14B, for example, light coming from the left at an oblique angle can be prevented from entering the photoelectric conversion unit 61R by hitting the photoelectric conversion unit separation section 121b, and by configuring the photoelectric conversion unit separation section 121b with a small width, it becomes possible to form larger openings on the light incident surface side of both the photoelectric conversion unit 61L and the photoelectric conversion unit 61R.

[0122] Figure 15 shows an example of the planar configuration of the photoelectric conversion unit separation unit 121. In Figure 15, the left figure shows an example of the planar configuration of the photoelectric conversion unit separation unit 121 at the center of the image height, and the right figure shows an example of the planar configuration of the photoelectric conversion unit separation unit 121 at a high image height.

[0123] The photoelectric conversion unit separation unit 121 is provided so as to surround the photoelectric conversion unit 61 of one phase difference detection pixel 32, which is composed of a photoelectric conversion unit 61L and a photoelectric conversion unit 61R, and is provided in a grid pattern on the pixel array unit 33.

[0124] In the photoelectric conversion unit separation section 121 shown in Figure 15A, a photoelectric conversion unit separation section 121a is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R located at the center of the image height, and a photoelectric conversion unit separation section 121b is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R located at the high image height. The width of the photoelectric conversion unit separation section 121b is formed to be narrower than the width of the photoelectric conversion unit separation section 121a.

[0125] As shown in Figure 15B, the photoelectric conversion unit separators 121a and 121b, which are provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, can also be configured to have a shape in which the central part is interrupted. In this case as well, the width of the photoelectric conversion unit separator 121b provided on the high image height side is narrower than the width of the photoelectric conversion unit separator 121a provided at the center of the image height.

[0126] As shown in Figure 15C, the photoelectric conversion unit separators 121a and 121b provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R are formed in a shape with a break in the central part, and the length of the photoelectric conversion unit separator 121b provided on the high image height side is shorter than the length of the photoelectric conversion unit separator 121a provided at the center of the image height.

[0127] In this case, the photoelectric conversion unit separator 121, which is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, is formed such that its length gradually decreases from the center of the image height toward the higher image height side. Also, as in the case shown in Figure 15B, the width of the photoelectric conversion unit separator 121b provided toward the higher image height side may be formed to be narrower than the width of the photoelectric conversion unit separator 121a provided toward the center of the image height.

[0128] The planar configuration example of the photoelectric conversion unit separation section 121 shown in Figure 15 can also be applied to the phase difference detection pixel 32 in the third embodiment shown in Figure 13. When applied to the phase difference detection pixel 32 in the third embodiment, the portion of the photoelectric conversion unit separation section 121 can be replaced with the light-shielding film 73.

[0129] <Fifth Embodiment> Figure 16 shows an example of the cross-sectional configuration of the phase difference detection pixel 32 in the fifth embodiment.

[0130] The phase difference detection pixel 32 in the fifth embodiment shown in Figure 16 differs from the phase difference detection pixel 32 in the first to fourth embodiments in that it does not have an inner lens 63.

[0131] The phase difference detection pixel 32 shown in Figure 16 is constructed by stacking a semiconductor substrate 51, a filter layer 53, and an on-chip lens layer 54 in order from the bottom in the figure. Each phase difference detection pixel 32 is provided with a photoelectric conversion unit 61, a color filter 64, and an on-chip lens 65.

[0132] A light-shielding film 73 is provided on the photoelectric conversion unit separation unit 121, which is located between the phase difference detection pixels 32. The filter layer 53 is composed of color filters 64 arranged in a planar configuration, which transmit light in the wavelength range corresponding to the color received by each normal pixel 32. The on-chip lens layer 54 is composed of on-chip lenses 65 arranged in a planar configuration.

[0133] The photoelectric conversion unit separation unit 121 is provided so as to surround the photoelectric conversion unit 61 of one phase difference detection pixel 32, which is composed of a photoelectric conversion unit 61L and a photoelectric conversion unit 61R, and is also provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R.

[0134] In the semiconductor substrate 51, a photoelectric conversion unit isolation unit 121 is provided between adjacent photoelectric conversion units 61 to electrically isolate each photoelectric conversion unit 61. Similar to the third and fourth embodiments, one phase difference detection pixel 32 comprises two photoelectric conversion units 61 (two or more photoelectric conversion units 61). A phase difference detection pixel 32 located at the center of the image height is provided with a photoelectric conversion unit isolation unit 121c between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, and a phase difference detection pixel 32 located on the high image height side is provided with a photoelectric conversion unit isolation unit 121d between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R.

[0135] The pupil correction applied to the phase difference detection pixel 32, which is located on the high image height side as shown in Figure 16B, will now be explained. The phase difference detection pixel 32, which is located at the high image height (position P12) as shown in the right-hand diagram of Figure 16, receives incident light from the upper left direction in the diagram. The on-chip lens 65 and color filter 64 are positioned to match this direction of incidence.

[0136] The on-chip lens 65, located on the color filter 64, is positioned to the left of the center of the photoelectric conversion unit 61 by a predetermined amount. The phase difference detection pixels 32, located on the image height side, are positioned such that the on-chip lens 65 is shifted toward the center of the image height. At high image height (position P12), the incident light on the pixel array 33 enters the pixels from the upper left to the lower right in Figure 16, so pupil correction is performed with a correction amount corresponding to the angle of incidence of the light. By performing pupil correction, more light can be incident on the photoelectric conversion unit 61, thereby improving pixel sensitivity. In other words, the sensor characteristics can be improved.

[0137] The phase difference detection pixel 32 shown in Figure 16 is equipped with an on-chip lens 65, and is configured so that the incident light to the photoelectric conversion unit 61 is focused by this on-chip lens 65. As described above, the on-chip lens 65 is positioned to optimally receive incident light on the imaging plane (XY plane) of the pixel array unit 33 (Figure 1) through pupil correction. Furthermore, pupil correction is also applied to the photoelectric conversion unit separation unit 121 provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, so that pupil correction is also applied in the direction perpendicular to the imaging plane (XY plane) of the pixel array unit 33 (Figure 1) (Z axis direction).

[0138] The photoelectric conversion unit separation unit 121d, which is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R of the phase difference detection pixel 32 located on the high image height side, is formed to be shallower in the depth direction than the photoelectric conversion unit separation unit 121c, which is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R of the phase difference detection pixel 32 located at the center of the image height.

[0139] The photoelectric conversion unit separation unit 121, which is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, is formed such that its depth gradually decreases (its length shortens) as it moves from the center of the image height toward the higher image height side.

[0140] In Figure 16, the photoelectric conversion unit separation unit 121, which is provided between the photoelectric conversion unit 61L and the photoelectric conversion unit 61R, is described in an example where its depth gradually decreases (its length shortens) as it moves from the center of the image height towards the higher image height side. However, as with the fourth embodiment shown in Figure 14, it may also be configured so that its width gradually decreases as it moves from the center of the image height towards the higher image height side. Alternatively, it may be implemented in combination with the fourth embodiment shown in Figure 14, so that its depth gradually decreases (its length shortens) and its width gradually decreases as it moves from the center of the image height towards the higher image height side.

[0141] The planar configuration example of the photoelectric conversion unit separation unit 121 shown in Figure 16 can be any of the configuration examples A to C in Figure 15.

[0142] As mentioned above, pupil correction can be optimized not only by applying it in the direction of the image sensor's imaging plane (XY plane), but also in the direction perpendicular to the imaging plane (Z direction). By applying this technology, the incident angle at which phase difference information can be acquired can be broadened. For example, even when using interchangeable lenses, phase difference information can be acquired in accordance with various lenses.

[0143] <Examples of application to endoscopic surgical systems> The technology disclosed herein (this technology) can be applied to various products. For example, the technology disclosed herein may be applied to endoscopic surgical systems.

[0144] Figure 17 shows an example of a schematic configuration of an endoscopic surgical system to which the technology described herein (the technology) may be applied.

[0145] Figure 17 illustrates a surgeon (physician) 11131 performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgical system 11000. As shown in the figure, the endoscopic surgical system 11000 consists of an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment device 11112, a support arm device 11120 for supporting the endoscope 11100, and a cart 11200 equipped with various devices for endoscopic surgery.

[0146] The endoscope 11100 consists of a barrel 11101, the tip of which is inserted into the body cavity of the patient 11132 for a predetermined length, and a camera head 11102 connected to the base end of the barrel 11101. In the illustrated example, the endoscope 11100 is shown as a so-called rigid endoscope having a rigid barrel 11101, but the endoscope 11100 may also be configured as a so-called flexible endoscope having a flexible barrel.

[0147] An opening into which an objective lens is fitted is provided at the tip of the microscope tube 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the microscope tube by a light guide extending inside the microscope tube 11101, and is irradiated through the objective lens towards the object to be observed inside the body cavity of the patient 11132. The endoscope 11100 may be a straight-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0148] The camera head 11102 contains an optical system and an image sensor. Reflected light from the object being observed (observation light) is focused onto the image sensor by the optical system. The image sensor converts the observation light into electrical signals, generating an electrical signal corresponding to the observation light, i.e., an image signal corresponding to the observed image. This image signal is transmitted as RAW data to the camera control unit (CCU) 11201.

[0149] The CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and other components, and comprehensively controls the operation of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing operations on that image signal, such as development processing (demosaic processing), to display an image based on that image signal.

[0150] The display device 11202 displays an image based on an image signal that has been processed by the CCU 11201, under control from the CCU 11201.

[0151] The light source device 11203 is composed of a light source such as an LED (light-emitting diode) and supplies illumination light to the endoscope 11100 when photographing the surgical area, etc.

[0152] The input device 11204 is an input interface for the endoscopic surgical system 11000. The user can input various types of information and instructions to the endoscopic surgical system 11000 via the input device 11204. For example, the user can input instructions to change the imaging conditions (type of light, magnification, focal length, etc.) of the endoscope 11100.

[0153] The treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for purposes such as tissue cauterization, incision, or blood vessel sealing. The insufflation device 11206 injects gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing a field of view by the endoscope 11100 and securing the operator's workspace. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, images, or graphs.

[0154] The light source device 11203 that supplies illumination light to the endoscope 11100 when photographing the surgical area can be configured as a white light source consisting of, for example, an LED, a laser light source, or a combination thereof. When the white light source is configured as a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in time-division by irradiating the observation target with laser light from each of the RGB laser light sources in time-division and controlling the drive of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter on the image sensor.

[0155] Furthermore, the light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of the change in light intensity, images can be acquired in time-division order, and these images can be combined to generate high dynamic range images without so-called black crushing and white clipping.

[0156] Furthermore, the light source device 11203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue and irradiating with narrow-band light compared to the irradiation light used during normal observation (i.e., white light), so-called narrow-band imaging is performed to image predetermined tissues such as blood vessels on the surface of mucosa with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image from fluorescence generated by irradiation with excitation light. In fluorescence observation, excitation light is irradiated onto body tissue and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is injected into body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated onto the body tissue to obtain a fluorescence image. The light source device 11203 may be configured to supply narrow-band light and / or excitation light corresponding to such special light observation.

[0157] Figure 18 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU 11201 shown in Figure 17.

[0158] The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other via a transmission cable 11400 so that they can communicate with each other.

[0159] The lens unit 11401 is an optical system provided at the connection point with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and then incident on the lens unit 11401. The lens unit 11401 is composed of a combination of multiple lenses, including a zoom lens and a focus lens.

[0160] The imaging unit 11402 may consist of one image sensor (a so-called single-chip type) or multiple image sensors (a so-called multi-chip type). If the imaging unit 11402 is configured as a multi-chip type, for example, each image sensor may generate image signals corresponding to RGB, and these may be combined to obtain a color image. Alternatively, the imaging unit 11402 may be configured to have a pair of image sensors for acquiring image signals for the right eye and left eye, respectively, corresponding to 3D (dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical area. In addition, if the imaging unit 11402 is configured as a multi-chip type, multiple lens units 11401 may be provided corresponding to each image sensor.

[0161] Furthermore, the imaging unit 11402 does not necessarily have to be located on the camera head 11102. For example, the imaging unit 11402 may be located inside the lens barrel 11101, directly behind the objective lens.

[0162] The drive unit 11403 is composed of actuators and, under control from the camera head control unit 11405, moves the zoom lens and focus lens of the lens unit 11401 along the optical axis by a predetermined distance. This allows the magnification and focus of the image captured by the imaging unit 11402 to be adjusted as appropriate.

[0163] The communication unit 11404 is composed of communication devices for sending and receiving various types of information with the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

[0164] Furthermore, the communication unit 11404 receives a control signal from the CCU 11201 to control the drive of the camera head 11102 and supplies it to the camera head control unit 11405. The control signal includes information about imaging conditions, such as information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image.

[0165] The imaging conditions such as frame rate, exposure value, magnification, and focus may be specified by the user as appropriate, or they may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. In the latter case, the endoscope 11100 is equipped with so-called AE (Auto Exposure), AF (Auto Focus), and AWB (Auto White Balance) functions.

[0166] The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal received from the CCU 11201 via the communication unit 11404.

[0167] The communication unit 11411 is comprised of a communication device for sending and receiving various types of information with the camera head 11102. The communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400.

[0168] Furthermore, the communication unit 11411 transmits control signals to the camera head 11102 to control the driving of the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communications, etc.

[0169] The image processing unit 11412 performs various image processing operations on the image signal, which is RAW data transmitted from the camera head 11102.

[0170] The control unit 11413 performs various controls related to imaging the surgical area, etc., by the endoscope 11100, and the display of the images obtained from imaging the surgical area, etc. For example, the control unit 11413 generates a control signal to control the driving of the camera head 11102.

[0171] Furthermore, the control unit 11413 displays the captured image showing the surgical area, etc., on the display device 11202 based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition technologies. For example, the control unit 11413 can recognize surgical instruments such as forceps, specific biological sites, bleeding, mist when using the energy treatment device 11112, etc., by detecting the shape and color of the edges of objects included in the captured image. When the control unit 11413 displays the captured image on the display device 11202, it may use the recognition results to superimpose various surgical support information onto the image of the surgical area. By superimposing the surgical support information and presenting it to the surgeon 11131, the burden on the surgeon 11131 can be reduced, and the surgeon 11131 can proceed with the surgery reliably.

[0172] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable thereof.

[0173] In the illustrated example, communication was performed via a wired connection using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

[0174] <Examples of application to mobile devices> The technology disclosed herein (this technology) can be applied to various products. For example, the technology disclosed herein may be implemented as a device mounted on any type of mobile device such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0175] Figure 19 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0176] The vehicle control system 12000 comprises a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 19, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0177] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0178] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0179] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0180] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0181] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0182] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including collision avoidance or impact mitigation, following driving based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0183] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0184] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0185] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 19, the output devices include an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0186] Figure 20 shows an example of the installation position of the imaging unit 12031.

[0187] In Figure 20, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0188] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 installed on the upper part of the windshield inside the vehicle is mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0189] Figure 20 shows an example of the imaging range of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0190] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0191] For example, the microcomputer 12051, based on distance information obtained from the imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to the vehicle 12100). In particular, it can extract the closest object on the vehicle 12100's path that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, where the vehicle drives autonomously without driver intervention, can be performed.

[0192] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0193] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0194] In this specification, "system" refers to an entire apparatus composed of multiple devices.

[0195] Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also occur.

[0196] Furthermore, the embodiments of this technology are not limited to those described above, and various modifications are possible without departing from the spirit of this technology.

[0197] Furthermore, this technology can also take the following configurations: (1) An image sensor comprising a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a photoelectric conversion portion, a first lens located on the light incident side of the photoelectric conversion portion and refracting light, and a second lens located on the light incident side of the first lens, wherein the first lens is positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, and the second lens is positioned offset in the planar direction of the pixel array portion by a second offset amount larger than the first offset amount, and the first lens is provided with a size corresponding to the image height of the pixel array portion. (2) The image sensor according to (1) wherein the first lens is an inner lens. (3) The image sensor according to (1) wherein the first lens has a non-light-collecting region in the central portion. (4) The image sensor according to any one of (1) to (3), wherein the first lens is formed in a shape that becomes larger or smaller from the center of the image height to the high image height. (5) The image sensor according to any one of (1) to (3), wherein the first lens is provided in a size corresponding to the curvature, with the curvature changing from the center of the image height to the high image height. (6) The image sensor according to any one of (1) to (5), wherein the pixel is a phase difference detection pixel for detecting the phase difference on the image plane of the pixel. (7) An electronic device comprising an image sensor having a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a photoelectric conversion portion, a first lens located on the light incident side of the photoelectric conversion portion and refracting light, and a second lens located on the light incident side of the first lens, the first lens being positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, the second lens being positioned offset in the planar direction of the pixel array portion by a second offset amount greater than the first offset amount, and the first lens being provided in a size corresponding to the image height of the pixel array portion, and a processing unit for processing signals from the image sensor.(8) An image sensor comprising a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a plurality of photoelectric conversion units, a first lens located on the light incident side of the photoelectric conversion unit and refracting light, and a light-shielding portion provided between adjacent photoelectric conversion units, wherein the first lens is positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, and the light-shielding portion is provided with a size corresponding to the image height of the pixel array portion. (9) The image sensor according to (8), further comprising a second lens located on the photoelectric conversion unit side of the first lens, wherein the second lens is positioned offset in the planar direction of the pixel array portion by a second offset amount smaller than the first offset amount. (10) The image sensor according to (8) or (9), wherein the light-shielding portion is a light-shielding film provided on the light incident surface side of the photoelectric conversion unit. (11) The image sensor according to (10), wherein the light-shielding film is narrower in width from the center of the image height to the highest image height. (12) The image sensor according to (8), wherein the light-shielding portion is a photoelectric conversion unit separation portion provided in the depth direction of the photoelectric conversion unit. (13) The image sensor according to (12), wherein the photoelectric conversion unit separation portion is narrower in width from the center of the image height to the highest image height. (14) The image sensor according to (12) or (13), wherein the photoelectric conversion unit separation portion is shallower in depth from the center of the image height to the highest image height. (15) The image sensor according to any one of (8) to (14), wherein the pixel is a phase difference detection pixel for detecting the phase difference on the image plane of the pixel. (16) An electronic device comprising an image sensor having a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a plurality of photoelectric conversion units, a first lens located on the light incident side of the photoelectric conversion unit and refracting light, and a light-shielding portion provided between adjacent photoelectric conversion units, the first lenses being positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, and the light-shielding portion being provided with a size corresponding to the image height of the pixel array portion, and a processing unit for processing signals from the image sensor.

[0198] 10 Imaging device, 21 Lens group, 22 Image sensor, 23 DSP circuit, 24 Frame memory, 25 Display unit, 26 Recording unit, 27 Operation unit, 28 Power supply unit, 29 Bus line, 32 Pixel, 33 Pixel array unit, 34 Vertical drive circuit, 35 Column signal processing circuit, 36 Horizontal drive circuit, 37 Output circuit, 38 Control circuit, 39 Vertical signal line, 40 Pixel drive wiring, 41 Horizontal signal line, 42 Semiconductor substrate, 43 Input / output terminal, 51 Semiconductor substrate, 52 Planarization film, 53 Filter layer, 54 On-chip lens layer, 61 Photoelectric conversion unit, 62 Resin layer, 63 Inner lens, 64 Color filter, 65 On-chip lens, 72 Light-shielding wall, 73 Light-shielding film 101 Mask, 111 Inner lens, 121 Photoelectric conversion separation unit

Claims

1. An image sensor comprising a pixel array section in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a photoelectric conversion section, a first lens located on the light incident side of the photoelectric conversion section and refracting light, and a second lens located on the light incident side of the first lens, wherein the first lens is positioned offset in the planar direction of the pixel array section by a first offset amount corresponding to the image height of the pixel array section, the second lens is positioned offset in the planar direction of the pixel array section by a second offset amount greater than the first offset amount, and the first lens is provided with a size corresponding to the image height of the pixel array section.

2. The image sensor according to claim 1, wherein the first lens is an inner lens.

3. The image sensor according to claim 1, wherein the first lens has a non-light-gathering region in its central portion.

4. The image sensor according to claim 1, wherein the first lens is formed in a shape that becomes larger or smaller from the center of the image height to the highest image height.

5. The image sensor according to claim 1, wherein the first lens has a curvature that changes from the center of the image height to the highest image height, and is provided in a size corresponding to the curvature.

6. The image sensor according to claim 1, wherein the pixel is a phase difference detection pixel for detecting a phase difference in the image plane of the pixel.

7. An electronic device comprising an image sensor having a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a photoelectric conversion portion, a first lens located on the light incident side of the photoelectric conversion portion and refracting light, and a second lens located on the light incident side of the first lens, wherein the first lens is positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, and the second lens is positioned offset in the planar direction of the pixel array portion by a second offset amount greater than the first offset amount, and the first lens is provided with a size corresponding to the image height of the pixel array portion, and a processing unit for processing signals from the image sensor.

8. An image sensor comprising a pixel array section in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a plurality of photoelectric conversion sections, a first lens located on the light incident side of the photoelectric conversion section and refracting light, and a light-shielding section provided between adjacent photoelectric conversion sections, wherein the first lenses are positioned offset in the planar direction of the pixel array section by a first offset amount corresponding to the image height of the pixel array section, and the light-shielding sections are provided with a size corresponding to the image height of the pixel array section.

9. The image sensor according to claim 8, further comprising a second lens located on the photoelectric conversion unit side of the first lens, wherein the second lens is positioned offset in the planar direction of the pixel array by a second offset amount smaller than the first offset amount.

10. The image sensor according to claim 8, wherein the light-shielding portion is a light-shielding film provided on the light incident surface side of the photoelectric conversion portion.

11. The image sensor according to claim 10, wherein the light-shielding film narrows in width from the center of the image height to the highest image height.

12. The image sensor according to claim 8, wherein the light-shielding portion is a photoelectric conversion unit separation portion provided in the depth direction of the photoelectric conversion unit.

13. The image sensor according to claim 12, wherein the photoelectric conversion unit separation unit has a width that narrows from the center of the image height to the high image height.

14. The image sensor according to claim 12, wherein the depth of the photoelectric conversion unit separation unit decreases from the center of the image height to the high image height.

15. The image sensor according to claim 8, wherein the pixel is a phase difference detection pixel for detecting a phase difference in the image plane of the pixel.

16. An electronic device comprising an image sensor having a pixel array portion in which a plurality of pixels are arranged in a matrix, wherein each pixel comprises a plurality of photoelectric conversion units, a first lens located on the light incident side of the photoelectric conversion unit and refracting light, and a light-shielding portion provided between adjacent photoelectric conversion units, the first lenses being positioned offset in the planar direction of the pixel array portion by a first offset amount corresponding to the image height of the pixel array portion, and the light-shielding portion being provided with a size corresponding to the image height of the pixel array portion, and a processing unit for processing signals from the image sensor.

Images