Slurry, multi-liquid slurry, polishing method, method for producing component, and method for producing semiconductor component

Abstract

Provided is a slurry containing: abrasive grains; a non-ionic surfactant having two or fewer aromatic rings; and a cationic polymer. Also provided is a multi-liquid slurry in which constituent components of the slurry are stored separately as at least a first liquid and a second liquid. The first liquid contains the abrasive grains. The second liquid contains at least one type selected from the group consisting of the non-ionic surfactant and the cationic polymer. Also provided is a polishing method that includes a step for polishing a member to be polished using the slurry. Also provided is a method for producing a component, the method including a step for obtaining a component using a member to be polished, which has been polished using the polishing method. Also provided is a method for producing a semiconductor component, the method including a step for obtaining a semiconductor component using a member to be polished, which has been polished using the polishing method.

Description

Slurry, multi-liquid slurry, polishing method, method for manufacturing parts, and method for manufacturing semiconductor parts

[0001] This disclosure relates to slurry, multi-liquid slurry, polishing method, part manufacturing method, semiconductor part manufacturing method, etc.

[0002] In the field of semiconductor manufacturing, as ultra-large-scale integrated circuits (ULSIs) become more powerful, it is becoming increasingly difficult to achieve both high integration and high speed through miniaturization techniques that are merely extensions of conventional technologies. Therefore, technologies are being developed that allow for both miniaturization of semiconductor elements and high integration in the vertical direction (i.e., technologies for multi-layer wiring).

[0003] One of the most important technologies in the process of manufacturing devices with multilayer wiring is CMP (chemical mechanical polishing) technology. CMP technology is a technique for planarizing the surface of a substrate obtained by forming a thin film on a substrate using chemical vapor deposition (CVD), etc. For example, planarization by CMP is essential to ensure the depth of focus in lithography. If there are irregularities on the surface of the substrate, problems such as the inability to focus during the exposure process or the inability to sufficiently form fine wiring structures will occur. Furthermore, CMP technology is used in the device manufacturing process to form plasma oxide films (BPSG, HDP-SiO ２ This process is also applicable to steps such as forming element isolation (inter-element isolation; STI: shallow trench isolation) regions by polishing p-TEOS, etc.; forming ILD films (interlayer insulating films; insulating films that electrically insulate metal components (wiring, etc.) from each other in the same layer); and planarizing plugs (e.g., Al-Cu plugs) after embedding a silicon oxide-containing film in metal wiring.

[0004] CMP is typically performed using a device that can supply polishing fluid onto a polishing pad. The surface of the substrate is polished by pressing the substrate against the polishing pad while supplying polishing fluid between the substrate surface and the polishing pad. Thus, in CMP technology, the polishing fluid is one of the key technologies, and various polishing fluids have been developed to obtain high-performance polishing fluids (see, for example, Patent Document 1 below).

[0005] Japanese Patent Publication No. 2008-288537

[0006] For slurries that can be used as polishing fluids, it is sometimes required to quickly remove steps on pattern wafers that have steps between recesses and protrusions on their surface. For example, when removing steps from silicon oxide members (members containing silicon oxide) that have irregularities, it is sometimes required to obtain excellent step-removal properties.

[0007] One aspect of this disclosure aims to provide a slurry that has excellent step-eliminating properties in silicon oxide members having irregularities. Another aspect of this disclosure aims to provide a multi-liquid slurry capable of obtaining such a slurry. Another aspect of this disclosure aims to provide a polishing method using such a slurry. Another aspect of this disclosure aims to provide a method for manufacturing parts using such a polishing method. Another aspect of this disclosure aims to provide a method for manufacturing semiconductor parts using such a polishing method.

[0008] This disclosure relates to the following [1] to

[17] , etc. [1] A slurry containing abrasive grains, a nonionic surfactant having two or fewer aromatic rings, and a cationic polymer. [2] The slurry according to [1], wherein the nonionic surfactant comprises a polyoxyalkylene alkylphenyl ether. [3] The slurry according to [2], wherein the polyoxyalkylene alkylphenyl ether has two aromatic rings. [4] The slurry according to [2], wherein the polyoxyalkylene alkylphenyl ether has one aromatic ring. [5] The slurry according to any one of [1] to [4], wherein the nonionic surfactant comprises a polyoxyalkylene alkyl ether that does not have an aromatic ring. [6] The slurry according to any one of [1] to [5], wherein the cationic polymer comprises a polymer having a diallyldialkylammonium salt as a monomer unit. [7] The slurry according to any one of [1] to [6], wherein the cationic polymer comprises a reaction product of a composition containing at least dimethylamine and epichlorohydrin. [8] The slurry according to any one of [1] to [7], further comprising polyglycerin. [9] The slurry according to any one of [1] to [8], further comprising a nitrogen-containing compound having two or more nitrogen atoms bonded to a hydroxyalkyl group.

[10] The slurry according to [9], wherein the nitrogen-containing compound comprises ethylenedinitrilotetrapropanol.

[11] The slurry according to any one of [1] to

[10] , wherein the abrasive grains comprise cerium-based particles.

[12] The slurry according to any one of [1] to

[11] , wherein the average particle size of the abrasive grains is less than 50.0 nm.

[13] The slurry according to any one of [1] to

[12] , wherein the pH is 5.0 to 9.0. A multi-liquid slurry wherein the components of the slurry described in any one of [1] to

[13] are stored separately in at least a first liquid and a second liquid, the first liquid contains the abrasive grains, and the second liquid contains at least one selected from the group consisting of the nonionic surfactant and the cationic polymer. A polishing method comprising the step of polishing a workpiece using the slurry described in any one of [1] to

[13] . A method for manufacturing a part comprising the step of obtaining a part using a workpiece polished by the polishing method described in

[15] .A method for manufacturing a semiconductor component, comprising the step of obtaining a semiconductor component using a member to be polished by the polishing method described in

[17] and

[15] .

[0009] According to one aspect of this disclosure, a slurry with excellent step-eliminating properties in silicon oxide members having irregularities can be provided. According to another aspect of this disclosure, a multi-liquid slurry capable of obtaining such a slurry can be provided. According to another aspect of this disclosure, a polishing method using such a slurry can be provided. According to another aspect of this disclosure, a method for manufacturing a part using such a polishing method can be provided. According to another aspect of this disclosure, a method for manufacturing a semiconductor part using such a polishing method can be provided.

[0010] The embodiments of this disclosure will be described in detail below.

[0011] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and the range greater than A. "A or less" in a numerical range means A and the range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step can be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. "A or B" means that either A or B may be included, or both may be included. Unless otherwise specified, the materials exemplified in this specification can be used individually or in combination of two or more. The content of each component in a composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified. The terms "layer" or "film" include not only structures that form across the entire surface when observed in a plan view, but also structures that form in only a portion of the surface. The term "process" includes not only independent processes, but also processes that cannot be clearly distinguished from other processes, as long as the intended function of the process is achieved. Unless otherwise specified, "alkyl group" may be linear, branched, or cyclic. The term "hydroxyl group" does not include the OH structures contained in carboxyl groups, sulfo groups, and phosphate groups.

[0012] The slurry according to this embodiment contains abrasive grains, a nonionic surfactant having two or fewer aromatic rings, and a cationic polymer.

[0013] According to the slurry of this embodiment, excellent step-elimination properties can be obtained in silicon oxide members having irregularities. According to the slurry of this embodiment, in the evaluation of the embodiments described later, step-elimination properties of, for example, 90 nm or more (preferably 100 nm or more, 120 nm or more, 140 nm or more, 150 nm or more, 160 nm or more, etc.) can be obtained.

[0014] The factors that contribute to the excellent step-elimination properties in silicon oxide members with uneven surfaces are not entirely clear, but they are presumed to be as follows. However, the factors are not limited to those described below. Specifically, nonionic surfactants adsorb to the silicon oxide on the protrusions, thereby influencing the frequency of contact between the abrasive grains and the protrusions. Bulky nonionic surfactants with three or more aromatic rings reduce the frequency of contact between the abrasive grains and the protrusions by hindering contact. On the other hand, nonionic surfactants with two or fewer aromatic rings increase the frequency of contact between the abrasive grains and the protrusions without hindering contact. Furthermore, cationic polymers promote the effect of increasing the frequency of contact between the abrasive grains and the protrusions. As a result, excellent step-elimination properties are obtained in silicon oxide members with uneven surfaces.

[0015] According to one embodiment of the slurry according to this embodiment, a high polishing speed can be obtained for the protrusions in a silicon oxide member having an uneven surface. According to one embodiment of the slurry according to this embodiment, in the evaluation of the embodiments described later, a polishing speed of 5 nm / min or more (preferably 10 nm / min or more, 20 nm / min or more, 50 nm / min or more, 100 nm / min or more, etc.) can be obtained for the silicon oxide on the protrusions.

[0016] According to one embodiment of the slurry of this embodiment, a high polishing speed of silicon oxide on a blanket wafer without an uneven pattern can be obtained. According to one embodiment of the slurry of this embodiment, in the evaluation of the embodiments described later, a polishing speed of silicon oxide on the blanket wafer can be obtained as, for example, 300 nm / min or more (preferably 350 nm / min or more, 390 nm / min or more, 400 nm / min or more, 410 nm / min or more, etc.).

[0017] For slurries that can be used as polishing fluids, as semiconductor devices become smaller, it is sometimes required to obtain high flatness, and it is sometimes required to obtain excellent step-leveling ability while obtaining high flatness. According to one embodiment of the slurry of this embodiment, it is possible to obtain excellent step-leveling ability while obtaining high flatness. As an indicator of high flatness, the polishing speed of polysilicon in the convex parts and the polishing speed of silicon oxide in the concave parts of a pattern wafer having an uneven pattern can be used.

[0018] According to one embodiment of the slurry of this embodiment, the polishing speed of polysilicon on the protruding parts of a pattern wafer having an uneven pattern can be reduced. According to one embodiment of the slurry of this embodiment, in the evaluation of the embodiments described later, a pSi polishing speed of, for example, 5.0 nm / min or less (preferably 4.0 nm / min or less, 2.0 nm / min or less, 1.0 nm / min or less, 0.5 nm / min or less, etc.) can be obtained.

[0019] According to one embodiment of the slurry according to this embodiment, the polishing speed of silicon oxide in recesses on a pattern wafer having an uneven pattern can be reduced. According to one embodiment of the slurry according to this embodiment, in the evaluation of the embodiments described later, the polishing speed of silicon oxide in recesses can be obtained to be, for example, 20.0 nm / min or less (preferably 10.0 nm / min or less, 6.0 nm / min or less, 5.0 nm / min or less, 3.0 nm / min or less, 1.0 nm / min or less, 0.5 nm / min or less, 0.1 nm / min or less, etc.).

[0020] The slurry according to this embodiment can be used to polish a workpiece containing at least one selected from the group consisting of silicon dioxide and polysilicon, can be used to polish a workpiece containing silicon dioxide, can be used to polish a workpiece containing polysilicon, and can be used to polish a workpiece containing silicon dioxide and polysilicon. The slurry according to this embodiment only needs to have the property of being able to obtain excellent step-leveling ability in silicon dioxide members having irregularities, and silicon dioxide and polysilicon may be polished individually, or silicon dioxide and polysilicon may be polished simultaneously. The slurry according to this embodiment can be used as a polishing slurry and can be used as a CMP polishing liquid.

[0021] The slurry according to this embodiment contains abrasive grains. Inorganic materials can be used as constituent materials for the abrasive grains, and examples include cerium compounds (compounds containing cerium), alumina, silica, titania, zirconia, magnesia, mullite, silicon nitride, α-sialon, aluminum nitride, titanium nitride, silicon carbide, boron carbide, etc. Examples of cerium compounds include cerium hydroxide (a compound having a hydroxyl group bonded to a cerium atom), cerium oxide, cerium ammonium nitrate, cerium acetate, cerium sulfate hydrate, cerium bromate, cerium bromide, cerium chloride, cerium oxalate, cerium nitrate, cerium carbonate, etc. The cerium compound may contain tetravalent cerium or trivalent cerium. The cerium-based particles may contain hydration water. The abrasive grains may contain cerium compounds, cerium-based particles (particles containing cerium compounds), at least one selected from the group consisting of cerium hydroxide and cerium oxide, cerium hydroxide, or cerium hydroxide particles (particles containing cerium hydroxide), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining high polishing speeds on protrusions in silicon oxide members with uneven surfaces, easily obtaining high polishing speeds on silicon oxide in blanket wafers, or easily obtaining high flatness.

[0022] The average particle size of the abrasive grains may be within the following ranges, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The average particle size of the abrasive grains may be 0.1 nm or more, 0.3 nm or more, 0.5 nm or more, 0.8 nm or more, or 1.0 nm or more. The average particle size of the abrasive grains may be 200.0 nm or less, 150.0 nm or less, 100.0 nm or less, 80.0 nm or less, 50.0 nm or less, less than 50.0 nm, 45.0 nm or less, 40.0 nm or less, 30.0 nm or less, 25.0 nm or less, or 20.0 nm or less. From these perspectives, the average particle size of the abrasive grains may be 0.1 to 200.0 nm, 0.1 to 50.0 nm, 0.1 to 30.0 nm, 0.1 to 20.0 nm, 0.5 to 200.0 nm, 0.5 to 50.0 nm, 0.5 to 30.0 nm, 0.5 to 20.0 nm, 1.0 to 200.0 nm, 1.0 to 50.0 nm, 1.0 to 30.0 nm, or 1.0 to 20.0 nm. The average particle size of the abrasive grains is the average particle size of the abrasive grains in the slurry and may be the 50% cumulative diameter (D50) in the mass-based cumulative particle size distribution curve. The average particle size of the abrasive grains can be measured by the method described in the examples below.

[0023] The zeta potential (surface potential) of the abrasive grains may be positive in the slurry (the zeta potential may exceed 0 mV) from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with irregularities, easily obtaining high polishing speeds on protrusions in silicon oxide members with irregularities, easily obtaining high polishing speeds on silicon oxide in blanket wafers, or easily obtaining high flatness. The zeta potential of the abrasive grains can be measured by the method described in the examples below.

[0024] The content of cerium compounds or cerium hydroxide in abrasive grains may be 50.0 to 100.0% by mass, greater than 50.0% by mass and 100.0% by mass or less, 55.0 to 100.0% by mass, 60.0 to 100.0% by mass, 65.0 to 100.0% by mass, 70.0 to 100.0% by mass, or 75.0 to 100.0% by mass, based on the total mass of abrasive grains (total mass of abrasive grains contained in the slurry), from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness.

[0025] The abrasive content may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The abrasive content may be 0.001% by mass or more, 0.005% by mass or more, 0.010% by mass or more, 0.015% by mass or more, 0.020% by mass or more, 0.025% by mass or more, 0.030% by mass or more, 0.035% by mass or more, 0.040% by mass or more, 0.045% by mass or more, or 0.050% by mass or more. The content of abrasive grains is 10.000 mass% or less, 5.000 mass% or less, 3.000 mass% or less, 2.000 mass% or less, 1.000 mass% or less, 0.500 mass% or less, 0.300 mass% or less, 0.200 mass% or less, It may be 0.100 mass% or less, 0.090 mass% or less, 0.080 mass% or less, 0.070 mass% or less, 0.065 mass% or less, 0.060 mass% or less, 0.055 mass% or less, or 0.050 mass% or less. From these perspectives, the abrasive content may be 0.001 to 10.000% by mass, 0.001 to 1.000% by mass, 0.001 to 0.100% by mass, 0.010 to 10.000% by mass, 0.010 to 1.000% by mass, 0.010 to 0.100% by mass, 0.030 to 10.000% by mass, 0.030 to 1.000% by mass, or 0.030 to 0.100% by mass.

[0026] The slurry according to this embodiment contains a nonionic surfactant having two or fewer aromatic rings (hereinafter, optionally referred to as "component (A)") as component (A). The nonionic surfactant is a surfactant that exhibits surface activity without dissociating into ions in water, and may have a nonionic hydrophilic group and a hydrophobic group.

[0027] (A) The number of aromatic rings in component (A) is two or less. Component (A) may include at least one selected from the group consisting of compounds having two aromatic rings, compounds having one aromatic ring, and compounds without aromatic rings. Component (A) may include a compound having two aromatic rings from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, or easily obtaining a high polishing speed for silicon oxide in blanket wafers. Component (A) may include a compound having one aromatic ring from the viewpoint of easily obtaining a high polishing speed for silicon oxide in blanket wafers. Component (A) may include a compound without aromatic rings from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with irregularities. The number of aromatic rings is calculated by considering a condensed ring containing an aromatic ring as one aromatic ring.

[0028] Component (A) may have a monocyclic aromatic ring, or it may have a polycyclic aromatic ring (a fused ring formed by the fusion of two or more monocyclic aromatic rings, a fused ring formed by the fusion of one or more monocyclic aromatic rings with one or more monocyclic non-aromatic rings, etc.). Examples of monocyclic aromatic rings include benzene rings, furan rings, thiophene rings, pyrrole rings, pyrazole rings, oxazole rings, isoxazole rings, thiazole rings, imidazole rings, pyridine rings, pyridazine rings, pyrimidine rings, and pyrazine rings. Examples of condensed rings formed by the fusion of two or more monocyclic aromatic rings include naphthalene rings, anthracene rings, benzofuran rings, isobenzofuran rings, indole rings, isoindole rings, benzothiophene rings, benzimidazole rings, indazole rings, benzoxazole rings, benzoisoxazole rings, benzothiazole rings, quinoline rings, isoquinoline rings, quinoxaline rings, acridine rings, quinazoline rings, sinnoline rings, phthalazine rings, and carbazole rings. Examples of condensed rings formed by the fusion of one or more monocyclic aromatic rings with one or more monocyclic non-aromatic rings include indan rings, fluorene rings, and tetraline rings.

[0029] The aromatic ring in component (A) may include a monocyclic aromatic ring, a carbocyclic ring, or a benzene ring, from the viewpoint of easily obtaining a high polishing rate of silicon oxide on the blanket wafer or easily obtaining high flatness. Component (A) may include at least one selected from the group consisting of compounds having two monocyclic aromatic rings and compounds having one monocyclic aromatic ring, from the viewpoint of easily obtaining a high polishing rate of silicon oxide on the blanket wafer or easily obtaining high flatness, and may include at least one selected from the group consisting of compounds having two carbocyclic rings and compounds having one carbocyclic ring, and may include at least one selected from the group consisting of compounds having two benzene rings and compounds having one benzene ring.

[0030] The aromatic ring may have a substituent. Examples of the substituent include an alkyl group, a hydroxy group, a carboxy group, a carboxylate group, an aldehyde group, an alkoxy group, an ester group, an amino group, an amide group, a nitro group, a cyano group, a mercapto group, a sulfo group (HSO ３ group), a SO ３ － group, a halogeno group (such as a fluoro group, a chloro group, a bromo group, an iodo group, etc.). From the viewpoint of easily obtaining high flatness, the component (A) may include a compound having an aromatic ring (such as a benzene ring) having an alkyl group as a substituent. In this case, from the viewpoint of easily obtaining high flatness, the carbon number of the alkyl group may be 4 to 12, 4 to 10, 4 to 8, 6 to 12, 6 to 10, 6 to 8, 8 to 12, or 8 to 10.

[0031] From the viewpoints of easily obtaining excellent step coverage in a silicon oxide member having irregularities, easily obtaining a high polishing rate of the convex portion in a silicon oxide member having irregularities, easily obtaining a high polishing rate of silicon oxide in a blanket wafer, or easily obtaining high flatness, the component (A) may have a polyoxyalkylene group, may have a polyoxyethylene group, may have a polyoxyalkylene group bonded to an aromatic ring via an ether group, or may have a polyoxyethylene group bonded to an aromatic ring via an ether group. The aromatic ring to which a polyoxyalkylene group is bonded via an ether group may have an aryl group bonded to the aromatic ring or may have a cumyl group bonded to the aromatic ring from the viewpoints of easily obtaining excellent step coverage in a silicon oxide member having irregularities, easily obtaining a high polishing rate of the convex portion in a silicon oxide member having irregularities, easily obtaining a high polishing rate of silicon oxide in a blanket wafer, or easily obtaining high flatness.

[0032] As the number of oxyalkylene groups in the polyoxyalkylene group or the number of oxyethylene groups in the polyoxyethylene group, the number of repeating units may be in the following ranges from the viewpoints of easily obtaining excellent step resolution in the silicon oxide member having irregularities, easily obtaining a high polishing rate of the convex portion in the silicon oxide member having irregularities, easily obtaining a high polishing rate of silicon oxide in the blanket wafer, or easily obtaining high flatness. The number of repeating units may be 1 or more, 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 7 or more, 8 or more, 9 or more, or 10 or more. The number of repeating units may be 30 or less, 24 or less, 20 or less, 16 or less, 12 or less, 10 or less, or 9 or less. From these viewpoints, the number of repeating units may be 1 to 30, 1 to 20, 1 to 10, 8 to 30, 8 to 20, 8 to 10, 10 to 30, or 10 to 20.

[0033] Examples of the component (A) include polyoxyalkylene alkyl phenyl ether, polyoxyalkylene alkyl ether, polyoxyalkylene fatty acid ester (for example, polyoxyethylene oleic acid ester), sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester, and the like.

[0034] Component (A) may contain a polyoxyalkylene alkylphenyl ether from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, or easily obtaining a high polishing speed for silicon oxide in blanket wafers. The polyoxyalkylene alkylphenyl ether may have two aromatic rings or one aromatic ring from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, or easily obtaining a high polishing speed for silicon oxide in blanket wafers. Examples of polyoxyalkylene alkylphenyl ethers include polyoxyalkylene octylphenyl ether, polyoxyalkylene nonylphenyl ether, and polyoxyalkylene cumylphenyl ether. The polyoxyalkylene alkylphenyl ether may include at least one selected from the group consisting of polyoxyethylene alkylphenyl ether, polyoxypropylene alkylphenyl ether, and polyoxyethylene polyoxypropylene alkylphenyl ether, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members having irregularities, or easily obtaining a high polishing speed for silicon oxide in blanket wafers. It may also include at least one selected from the group consisting of polyoxyethylene octylphenyl ether, polyoxypropylene octylphenyl ether, polyoxyethylene polyoxypropylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyoxyethylene polyoxypropylene nonylphenyl ether, polyoxyethylene cumylphenyl ether, polyoxypropylene cumylphenyl ether, and polyoxyethylene polyoxypropylene cumylphenyl ether.

[0035] Component (A) may contain a polyoxyalkylene alkyl ether, and may contain a polyoxyalkylene alkyl ether without an aromatic ring, from the viewpoint of easily obtaining excellent step-leveling properties in silicon oxide members with uneven surfaces, or easily obtaining a high polishing speed for the protrusions in silicon oxide members with uneven surfaces. Examples of polyoxyalkylene alkyl ethers include polyoxyalkylene 2-ethylhexyl ether. The polyoxyalkylene alkyl ether may contain at least one selected from the group consisting of polyoxyethylene alkyl ether, polyoxypropylene alkyl ether, and polyoxyethylene polyoxypropylene alkyl ether, from the viewpoint of easily obtaining excellent step-leveling properties in silicon oxide members with uneven surfaces, or easily obtaining a high polishing speed for the protrusions in silicon oxide members with uneven surfaces, and may contain at least one selected from the group consisting of polyoxyethylene 2-ethylhexyl ether, polyoxypropylene 2-ethylhexyl ether, and polyoxyethylene polyoxypropylene 2-ethylhexyl ether.

[0036] The molecular weight (e.g., weight-average molecular weight) of component (A) may be within the following ranges from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The molecular weight of component (A) may be 100 or more, 200 or more, 300 or more, 350 or more, 400 or more, 450 or more, 500 or more, 550 or more, or 600 or more. The molecular weight of component (A) may be 1000 or less, less than 1000, 900 or less, 850 or less, 800 or less, 750 or less, 700 or less, or 650 or less. From these viewpoints, the molecular weight of component (A) may be 100-1000, 100-800, 100-700, 300-1000, 300-800, 300-700, 500-1000, 500-800, or 500-700. From a similar viewpoint, the molecular weight of the group of compounds included in component (A) or the compounds themselves (for example, the molecular weight of polyoxyalkylene alkylphenyl ether, polyoxyethylene cumylphenyl ether, etc.) may also be within the above-mentioned ranges.

[0037] (A) The weight-average molecular weight of component (A) can be obtained, for example, by measuring it using gel permeation chromatography (GPC) under the following conditions and converting it to standard polyethylene glycol. Sample: 20 μL Standard polyethylene glycol: Standard polyethylene glycol manufactured by Polymer Laboratory (molecular weights: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600 and 23000) Detector: RI-monitor manufactured by Resonaq Corporation, product name "Shodex-RI SE-61" Pump: Product name "L-6000" manufactured by Hitachi, Ltd. Column: "GS-220HQ" and "GS-620HQ" manufactured by Resonaq Corporation, linked in this order Eluent: 0.4 mol / L aqueous sodium chloride solution Measurement temperature: 30°C Flow rate: 1.00 mL / min Measurement time: 45 min

[0038] The HLB value of component (A) may be within the following ranges, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The HLB value of component (A) may be 8.0 or higher, 8.5 or higher, 9.0 or higher, 9.5 or higher, 10.0 or higher, 10.5 or higher, 11.0 or higher, 11.5 or higher, 12.0 or higher, 12.5 or higher, 13.0 or higher, or 13.5 or higher. The HLB value of component (A) may be 20.0 or less, 19.0 or less, 18.0 or less, 17.5 or less, 17.0 or less, 16.5 or less, 16.0 or less, 15.5 or less, 15.0 or less, 14.5 or less, 14.0 or less, 13.5 or less, or 13.0 or less. From these viewpoints, the HLB values ​​may be 8.0 to 20.0, 8.0 to 18.0, 8.0 to 15.0, 10.0 to 20.0, 10.0 to 18.0, 10.0 to 15.0, 12.0 to 20.0, 12.0 to 18.0, or 12.0 to 15.0. From a similar viewpoint, the HLB values ​​of the group of compounds or compounds included in component (A) (for example, the HLB values ​​of polyoxyalkylene alkylphenyl ethers, polyoxyethylene cumylphenyl ethers, etc.) may also be within the above-mentioned ranges. (A) The HLB value of component can be calculated using the Griffin method.

[0039] The content of component (A) in the nonionic surfactant contained in the slurry according to this embodiment may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more, based on the total mass of the nonionic surfactant (the total amount of component (A) and nonionic surfactants that do not fall under component (A)), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members having irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The nonionic surfactant contained in the slurry according to this embodiment may be substantially composed of component (A) (an embodiment in which the content of component (A) is substantially 100% by mass based on the total mass of the nonionic surfactant contained in the slurry according to this embodiment).

[0040] (A) The content of component (A) may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for the protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (A) may be 0.001% by mass or more, 0.005% by mass or more, 0.010% by mass or more, 0.012% by mass or more, 0.015% by mass or more, 0.018% by mass or more, 0.020% by mass or more, 0.022% by mass or more, 0.025% by mass or more, 0.028% by mass or more, 0.030% by mass or more, 0.032% by mass or more, 0.035% by mass or more, 0.038% by mass or more, 0.040% by mass or more, 0.042% by mass or more, 0.045% by mass or more, 0.048% by mass or more, or 0.050% by mass or more. The content of component (A) is 0.500% by mass or less, 0.400% by mass or less, 0.300% by mass or less, 0.200% by mass or less, 0.100% by mass or less, 0.080% by mass or less, 0.050% by mass or less, 0.048% by mass or less, 0.045% by mass or less, 0.04 It may be 2% by mass or less, 0.040% by mass or less, 0.038% by mass or less, 0.035% by mass or less, 0.032% by mass or less, 0.030% by mass or less, 0.028% by mass or less, 0.025% by mass or less, 0.022% by mass or less, or 0.020% by mass or less. From these viewpoints, the content of component (A) may be 0.001 to 0.500% by mass, 0.001 to 0.080% by mass, 0.001 to 0.045% by mass, 0.001 to 0.030% by mass, 0.010 to 0.500% by mass, 0.010 to 0.080% by mass, 0.010 to 0.045% by mass, 0.010 to 0.030% by mass, 0.030 to 0.500% by mass, 0.030 to 0.080% by mass, 0.030 to 0.045% by mass, 0.045 to 0.500% by mass, or 0.045 to 0.080% by mass. From a similar viewpoint, the group of compounds included in component (A) or the content of the compounds (for example, the content of polyoxyalkylene alkylphenyl ether, polyoxyethylene cumylphenyl ether, etc.) may also be within the above-mentioned ranges.

[0041] The content of component (A) may be in the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members having irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (A) may be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, 65 parts by mass or more, 70 parts by mass or more, 75 parts by mass or more, 80 parts by mass or more, 85 parts by mass or more, 90 parts by mass or more, 95 parts by mass or more, or 100 parts by mass or more. The content of component (A) is 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less, 95 parts by mass or less, 90 parts by mass or less , 85 parts by mass or less, 80 parts by mass or less, 75 parts by mass or less, 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, or 40 parts by mass or less. From these viewpoints, the content of component (A) may be 1 to 500 parts by mass, 1 to 120 parts by mass, 1 to 90 parts by mass, 1 to 50 parts by mass, 10 to 500 parts by mass, 10 to 120 parts by mass, 10 to 90 parts by mass, 10 to 50 parts by mass, 30 to 500 parts by mass, 30 to 120 parts by mass, 30 to 90 parts by mass, 30 to 50 parts by mass, 50 to 500 parts by mass, 50 to 120 parts by mass, 50 to 90 parts by mass, 90 to 500 parts by mass, or 90 to 120 parts by mass. From a similar viewpoint, the group of compounds included in component (A) or the content of the compounds (for example, the content of polyoxyalkylene alkylphenyl ether, polyoxyethylene cumylphenyl ether, etc.) may also be within the ranges described above.

[0042] The slurry according to this embodiment contains a cationic polymer (hereinafter, optionally referred to as "component (B)") as component (B). A cationic polymer is defined as a polymer having a cationic group, or a group that can be ionized into a cationic group, in its main chain or side chain. Examples of cationic groups include amino groups, imino groups, cyano groups, and the like.

[0043] (B) Examples of component (B) include polymers having at least one selected from the group consisting of allylamine, diallylamine, vinylamine, ethyleneimine and derivatives thereof as a monomer unit; and polysaccharides such as chitosan and chitosan derivatives.

[0044] Allylamine polymers are polymers having at least one monomer unit selected from the group consisting of allylamine and its derivatives. Examples of allylamine derivatives include alkoxycarbonylated allylamine, methylcarbonylated allylamine, aminocarbonylated allylamine, and ureated allylamine.

[0045] Diallylamine polymers are polymers having at least one monomer unit selected from the group consisting of diallylamine and its derivatives. Examples of diallylamine derivatives include alkyldiallylamines (such as methyldiallylamine), diallyldialkylammonium salts (such as diallyldimethylammonium salt and diallylmethylethylammonium salt), acylated diallylamines, aminocarbonylated diallylamines, alkoxycarbonylated diallylamines, aminothiocarbonylated diallylamines, and hydroxyalkylated diallylamines. Examples of ammonium salts include ammonium chloride and ammonium alkyl sulfates (e.g., ammonium ethyl sulfate).

[0046] A vinylamine polymer is a polymer having at least one monomer unit selected from the group consisting of vinylamines and their derivatives. Examples of vinylamine derivatives include alkylated vinylamines, amidated vinylamines, ethylene oxided vinylamines, propylene oxided vinylamines, alkoxylated vinylamines, carboxymethylated vinylamines, acylated vinylamines, and urea-based vinylamines.

[0047] Ethyleneimine polymers are polymers having at least one monomer unit selected from the group consisting of ethyleneimine and its derivatives. Examples of ethyleneimine derivatives include aminoethylated acrylic polymers, alkylated ethyleneimine, ureated ethyleneimine, and propylene oxided ethyleneimine.

[0048] Component (B) may contain polymers having compounds other than allylamine, diallylamine, vinylamine, ethyleneimine and their derivatives as monomer units, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness, it may contain polymers having diallyldialkylammonium salt as monomer units, it may contain homopolymers of allylamine, diallylamine, vinylamine or ethyleneimine (polyallylamine, polydiallylamine, polyvinylamine or polyethyleneimine), and may contain homopolymers of diallyldialkylammonium salt Often, copolymers may contain at least one selected from the group consisting of allylamine, diallylamine, vinylamine, ethyleneimine and their derivatives as monomer units; copolymers may contain diallyldialkylammonium salt as monomer units; copolymers may contain at least one selected from the group consisting of allylamine, diallylamine, vinylamine, ethyleneimine and their derivatives, and compounds other than allylamine, diallylamine, vinylamine, ethyleneimine and their derivatives as monomer units; and copolymers may contain diallyldialkylammonium salt and compounds other than allylamine, diallylamine, vinylamine, ethyleneimine and their derivatives as monomer units. Compounds other than allylamine, diallylamine, vinylamine, ethyleneimine, and their derivatives include (meth)acrylamide, dimethyl(meth)acrylamide, diethyl(meth)acrylamide, hydroxyethyl(meth)acrylamide, (meth)acrylic acid, methyl (meth)acrylate, 2-(dimethylamino)ethyl (meth)acrylate, maleic acid, epichlorohydrin, sulfur dioxide, etc. The arrangement of monomer units in the copolymer is arbitrary.For example, the copolymer may have any form such as (a) a block copolymer in which identical monomer units are arranged in a continuous sequence, (b) a random copolymer in which monomer units A and monomer units B are arranged without any particular order, or (c) an alternating copolymer in which monomer units A and monomer units B are arranged alternately.

[0049] Component (B) may contain polymers having (meth)acrylamide as a monomer unit, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members having irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness; it may contain polymers having at least one selected from the group consisting of allylamine, diallylamine, vinylamine, ethyleneimine and derivatives thereof, and (meth)acrylamide as monomer units; it may contain polymers having at least one selected from the group consisting of diallylamine and its derivatives, and (meth)acrylamide as monomer units; it may contain polymers having diallyldimethylammonium salt and (meth)acrylamide as monomer units; and it may contain polymers having diallyldimethylammonium chloride and (meth)acrylamide as monomer units.

[0050] Component (B) may contain a reaction product (e.g., a condensate) of a composition containing at least epichlorohydrin, a reaction product (e.g., a condensate) of a composition containing at least dimethylamine and epichlorohydrin, or a reaction product (e.g., a condensate) of a composition containing at least dimethylamine, ammonia and epichlorohydrin. The composition that gives the reaction product may contain compounds other than dimethylamine, ammonia and epichlorohydrin. Component (B) may contain a compound having a structure represented by the following general formula (B1) from the viewpoint of easily obtaining excellent step-reducing properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for the protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. Component (B) may include at least one selected from the group consisting of dimethylamine / epichlorohydrin condensates (polycondensates) and dimethylamine / ammonia / epichlorohydrin condensates (polycondensates), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness.

[0051] [In the formula, a represents an integer greater than or equal to 1, and b represents an integer greater than or equal to 0 (for example, greater than or equal to 1).]

[0052] Component (B) may contain at least one selected from the group consisting of diallylamine polymers and reaction products of compositions containing at least dimethylamine and epichlorohydrin, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness; it may also contain at least one selected from the group consisting of a polymer having a diallyldialkylammonium salt as a monomer unit and reaction products of compositions containing at least dimethylamine and epichlorohydrin; and it may also contain at least one selected from the group consisting of a polymer having a dimethyldialkylammonium salt as a monomer unit and reaction products of compositions containing at least dimethylamine, ammonia and epichlorohydrin.

[0053] The weight-average molecular weight of component (B) may be within the following ranges, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The weight-average molecular weight of component (B) may be 100 or more, 10,000 or more, 20,000 or more, 30,000 or more, 40,000 or more, 50,000 or more, 60,000 or more, 70,000 or more, 80,000 or more, 90,000 or more, 100,000 or more, 120,000 or more, 150,000 or more, or 180,000 or more. The weight-average molecular weight of component (B) may be 1,000,000 or less, 900,000 or less, 800,000 or less, 700,000 or less, 600,000 or less, 500,000 or less, 400,000 or less, 300,000 or less, 200,000 or less, or 180,000 or less. From these perspectives, the weight-average molecular weight of component (B) may be 000 to 1,000,000, 1,000 to 500,000, 1,000 to 200,000, 10,000 to 1,000,000, 10,000 to 500,000, 1,000 to 200,000, 1,000,000 to 1,000,000, 1,000,000 to 500,000, 1,500,000 to 1,000,000, 1,500,000 to 500,000, or 1,500,000 to 200,000.

[0054] (B) The weight-average molecular weight of component (B) can be obtained, for example, by measuring it using gel permeation chromatography (GPC) under the following conditions and converting it to standard polystyrene equivalent. Equipment used: Hitachi L-6000 (manufactured by Hitachi, Ltd.) Columns: Gelpack GL-R420 + Gelpack GL-R430 + Gelpack GL-R440 (product names of Hitachi High-Tech Corporation, 3 in total) Eluent: Tetrahydrofuran Measurement temperature: 40°C Flow rate: 1.75 mL / min Detector: L-3300RI (manufactured by Hitachi, Ltd.)

[0055] The content of component (B) may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (B) may be 0.0001% by mass or more, 0.0005% by mass or more, 0.0010% by mass or more, 0.0015% by mass or more, 0.0020% by mass or more, 0.0025% by mass or more, 0.0030% by mass or more, 0.0035% by mass or more, 0.0040% by mass or more, 0.0045% by mass or more, 0.0050% by mass or more, 0.0055% by mass or more, or 0.0060% by mass or more. The content of component (B) is 0.1000% by mass or less, 0.0500% by mass or less, 0.0300% by mass or less, 0.0200% by mass or less, 0.0100% by mass or less, 0.0090% by mass or less, 0.0080% by mass or less, 0.0070% by mass or less , 0.0065% by mass or less, 0.0060% by mass or less, 0.0055% by mass or less, 0.0050% by mass or less, 0.0045% by mass or less, 0.0040% by mass or less, 0.0035% by mass or less, or 0.0030% by mass or less. From these viewpoints, the content of component (B) may be 0.0001 to 0.1000% by mass, 0.0001 to 0.0100% by mass, 0.0001 to 0.0050% by mass, 0.0010 to 0.1000% by mass, 0.0010 to 0.0100% by mass, 0.0010 to 0.0050% by mass, 0.0050 to 0.1000% by mass, or 0.0050 to 0.0100% by mass. From a similar viewpoint, the group of compounds included in component (B) or the content of the compounds (for example, the content of diallylamine polymers, polymers having dimethyldialkylammonium salts as monomer units, etc.) may also be within the above-mentioned ranges.

[0056] The content of component (B) may be in the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (B) may be 0.1 parts by mass or more, 0.5 parts by mass or more, 1.0 parts by mass or more, 2.0 parts by mass or more, 3.0 parts by mass or more, 4.0 parts by mass or more, 5.0 parts by mass or more, 6.0 parts by mass or more, 7.0 parts by mass or more, 8.0 parts by mass or more, 9.0 parts by mass or more, 10.0 parts by mass or more, 11.0 parts by mass or more, or 12.0 parts by mass or more. The content of component (B) is 100 parts by mass or less, 80.0 parts by mass or less, 50.0 parts by mass or less, 40.0 parts by mass or less, 30.0 parts by mass or less, 25.0 parts by mass or less, 20.0 parts by mass or less, 15 .0 parts by weight or less, 12.0 parts by weight or less, 11.0 parts by weight or less, 10.0 parts by weight or less, 9.0 parts by weight or less, 8.0 parts by weight or less, 7.0 parts by weight or less, or 6.0 parts by weight or less. From these viewpoints, the content of component (B) may be 0.1 to 100 parts by mass, 0.1 to 20.0 parts by mass, 0.1 to 10.0 parts by mass, 1.0 to 100 parts by mass, 1.0 to 20.0 parts by mass, 1.0 to 10.0 parts by mass, 5.0 to 100 parts by mass, 5.0 to 20.0 parts by mass, 5.0 to 10.0 parts by mass, 8.0 to 100 parts by mass, or 8.0 to 20.0 parts by mass. From a similar viewpoint, the group of compounds included in component (B) or the content of the compounds (content of diallylamine polymers, polymers having dimethyldialkylammonium salts as monomer units, etc.) may also be within the above-mentioned ranges.

[0057] The content of component (B) may be within the following ranges relative to 100 parts by mass of the nonionic surfactant contained in the slurry according to this embodiment (total amount of component (A) and nonionic surfactants not corresponding to component (A)), or 100 parts by mass of component (A), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members having irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (B) may be 1.0 part by mass or more, 2.0 parts by mass or more, 3.0 parts by mass or more, 4.0 parts by mass or more, 5.0 parts by mass or more, 6.0 parts by mass or more, 7.0 parts by mass or more, 7.5 parts by mass or more, 8.0 parts by mass or more, 9.0 parts by mass or more, 10.0 parts by mass or more, 11.0 parts by mass or more, 12.0 parts by mass or more, 13.0 parts by mass or more, 14.0 parts by mass or more, or 15.0 parts by mass or more. The content of component (B) is 100 parts by mass or less, 80.0 parts by mass or less, 50.0 parts by mass or less, 40.0 parts by mass or less, 30.0 parts by mass or less, 25.0 parts by mass or less, 20.0 parts by mass or less, 18.0 parts by mass or less, 15. The amount may be 0 parts by weight or less, 14.0 parts by weight or less, 13.0 parts by weight or less, 12.0 parts by weight or less, 11.0 parts by weight or less, 10.0 parts by weight or less, 9.0 parts by weight or less, 8.0 parts by weight or less, or 7.5 parts by weight or less. From these viewpoints, the content of component (B) may be 1.0 to 100 parts by mass, 1.0 to 20.0 parts by mass, 1.0 to 14.0 parts by mass, 1.0 to 10.0 parts by mass, 5.0 to 100 parts by mass, 5.0 to 20.0 parts by mass, 5.0 to 14.0 parts by mass, 5.0 to 10.0 parts by mass, 10.0 to 100 parts by mass, 10.0 to 20.0 parts by mass, 10.0 to 14.0 parts by mass, 14.0 to 100 parts by mass, or 14.0 to 20.0 parts by mass. From a similar viewpoint, the group of compounds included in component (B) or the content of the compounds (content of diallylamine polymers, polymers having dimethyldialkylammonium salts as monomer units, etc.) may also be within the above-mentioned ranges.

[0058] The slurry according to this embodiment may contain a water-soluble polymer (hereinafter, optionally referred to as "component (C)") as component (C). Component (C) may have effects such as adjusting the dispersion stability of abrasive grains. "Water-soluble polymer" is defined as a polymer that dissolves in 0.1 g or more per 100 g of water. Compounds other than those corresponding to components (A) and (B) can be used as component (C).

[0059] Examples of component (C) include glycerin polymers such as polyglycerin and polyglycerin derivatives; polycarboxylic acids such as poly(meth)acrylic acid and polymaleic acid; (meth)acrylic polymers such as poly(meth)acrylamide and polydimethyl(meth)acrylamide; polysaccharides such as carboxymethylcellulose, agar, curdlan, dextrin, cyclodextrin, and pullulan; and vinyl polymers such as polyvinyl alcohol, polyvinylpyrrolidone, and polyacrolein. Component (C) may contain glycerin polymers, at least one selected from the group consisting of polyglycerin and polyglycerin derivatives, and may contain polyglycerin, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. In other words, the slurry according to this embodiment may contain a glycerin-based polymer, may contain at least one selected from the group consisting of polyglycerin and polyglycerin derivatives, and may contain polyglycerin.

[0060] The weight-average molecular weight of component (C) may be within the following ranges from the viewpoint of easily obtaining high dispersibility of abrasive grains. The weight-average molecular weight of component (C) may be 100 or more, 300 or more, 500 or more, 600 or more, 650 or more, 700 or more, or 750 or more. The weight-average molecular weight of component (C) may be 10000 or less, 5000 or less, 2000 or less, 1500 or less, 1000 or less, 900 or less, 800 or less, 780 or less, or 760 or less. From these viewpoints, the weight-average molecular weight of component (C) may be 100 to 10000, 100 to 2000, 100 to 1000, 300 to 10000, 300 to 2000, 300 to 1000, 500 to 10000, 500 to 2000, or 500 to 1000. From a similar perspective, the group of compounds included in component (C) or the weight-average molecular weight of the compounds (weight-average molecular weight of glycerol polymers, polyglycerols, etc.) may also be within the ranges described above.

[0061] (C) The weight-average molecular weight of component (C) can be obtained, for example, by measuring it using gel permeation chromatography (GPC) under the following conditions and converting it to standard polyethylene glycol. Sample: 20 μL Standard polyethylene glycol: Standard polyethylene glycol manufactured by Polymer Laboratory (molecular weights: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600 and 23000) Detector: RI-monitor manufactured by Resonaq Corporation, product name "Shodex-RI SE-61" Pump: Product name "L-6000" manufactured by Hitachi, Ltd. Column: "GS-220HQ" and "GS-620HQ" manufactured by Resonaq Corporation, linked in this order Eluent: 0.4 mol / L aqueous sodium chloride solution Measurement temperature: 30°C Flow rate: 1.00 mL / min Measurement time: 45 min

[0062] The content of component (C) may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (C) may be 0.01% by mass or more, 0.05% by mass or more, 0.10% by mass or more, 0.15% by mass or more, 0.20% by mass or more, 0.25% by mass or more, 0.30% by mass or more, 0.35% by mass or more, 0.40% by mass or more, 0.45% by mass or more, or 0.50% by mass or more. The content of component (C) may be 5.00% by mass or less, 3.00% by mass or less, 2.00% by mass or less, 1.00% by mass or less, 0.90% by mass or less, 0.80% by mass or less, 0.70% by mass or less, 0.60% by mass or less, or 0.50% by mass or less. From these viewpoints, the content of component (C) may be 0.01 to 5.00% by mass, 0.01 to 1.00% by mass, 0.01 to 0.60% by mass, 0.10 to 5.00% by mass, 0.10 to 1.00% by mass, 0.10 to 0.60% by mass, 0.40 to 5.00% by mass, 0.40 to 1.00% by mass, or 0.40 to 0.60% by mass. From a similar perspective, the group of compounds included in component (C) or the content of those compounds (content of glycerin polymers, polyglycerins, etc.) may also be within the ranges described above.

[0063] The content of component (C) may be in the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (C) may be 10 parts by mass or more, 50 parts by mass or more, 100 parts by mass or more, 200 parts by mass or more, 300 parts by mass or more, 400 parts by mass or more, 500 parts by mass or more, 600 parts by mass or more, 700 parts by mass or more, 800 parts by mass or more, 900 parts by mass or more, or 1000 parts by mass or more. The content of component (C) may be 5,000 parts by mass or less, 4,500 parts by mass or less, 4,000 parts by mass or less, 3,500 parts by mass or less, 3,000 parts by mass or less, 2,500 parts by mass or less, 2,000 parts by mass or less, 1,500 parts by mass or less, or 1,000 parts by mass or less. From these viewpoints, the content of component (C) may be 10 to 5,000 parts by mass, 10 to 3,000 parts by mass, 10 to 1,500 parts by mass, 100 to 5,000 parts by mass, 100 to 3,000 parts by mass, 100 to 1,500 parts by mass, 500 to 5,000 parts by mass, 500 to 3,000 parts by mass, or 500 to 1,500 parts by mass. From a similar viewpoint, the group of compounds included in component (C) or the content of the compounds (content of glycerin polymers, polyglycerins, etc.) may also be within the above-mentioned ranges.

[0064] The content of component (C) may be within the following ranges relative to 100 parts by mass of the nonionic surfactant (total amount of component (A) and nonionic surfactants not corresponding to component (A)) or 100 parts by mass of component (A), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed of the protrusions in silicon oxide members having irregularities, easily obtaining a high polishing speed of silicon oxide in blanket wafers, or easily obtaining high flatness, in relation to 100 parts by mass of the nonionic surfactant contained in the slurry according to this embodiment, or 100 parts by mass of component (A). The content of component (C) may be 0.1 parts by mass or more, 0.5 parts by mass or more, 1.0 parts by mass or more, 2.0 parts by mass or more, 3.0 parts by mass or more, 4.0 parts by mass or more, 5.0 parts by mass or more, 6.0 parts by mass or more, 7.0 parts by mass or more, 8.0 parts by mass or more, 9.0 parts by mass or more, or 10 parts by mass or more. The content of component (C) may be 50 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 12 parts by mass or less, 10 parts by mass or less, 9.0 parts by mass or less, 8.0 parts by mass or less, 7.0 parts by mass or less, 6.0 parts by mass or less, 5.0 parts by mass or less, or 4.0 parts by mass or less. From these viewpoints, the content of component (C) may be 0.1 to 50 parts by mass, 0.1 to 15 parts by mass, 0.1 to 9.0 parts by mass, 0.1 to 6.0 parts by mass, 1.0 to 50 parts by mass, 1.0 to 15 parts by mass, 1.0 to 9.0 parts by mass, 1.0 to 6.0 parts by mass, 6.0 to 50 parts by mass, 6.0 to 15 parts by mass, 6.0 to 9.0 parts by mass, 9.0 to 50 parts by mass, or 9.0 to 15 parts by mass. From a similar perspective, the group of compounds included in component (C) or the content of those compounds (content of glycerin polymers, polyglycerins, etc.) may also be within the ranges described above.

[0065] The content of component (C) may be in the following ranges relative to 100 parts by mass of component (B), from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (C) may be 0.01 parts by mass or more, 0.05 parts by mass or more, 0.10 parts by mass or more, 0.30 parts by mass or more, 0.50 parts by mass or more, 0.60 parts by mass or more, 0.70 parts by mass or more, 0.80 parts by mass or more, 1.00 parts by mass or more, or 1.20 parts by mass or more. The content of component (C) may be 10.00 parts by mass or less, 8.00 parts by mass or less, 6.00 parts by mass or less, 5.00 parts by mass or less, 4.00 parts by mass or less, 3.00 parts by mass or less, 2.00 parts by mass or less, 1.50 parts by mass or less, 1.20 parts by mass or less, 1.00 parts by mass or less, 0.80 parts by mass or less, 0.70 parts by mass or less, or 0.60 parts by mass or less. From these viewpoints, the content of component (C) may be 0.01 to 10.00 parts by mass, 0.01 to 1.50 parts by mass, 0.01 to 1.00 parts by mass, 0.10 to 10.00 parts by mass, 0.10 to 1.50 parts by mass, 0.10 to 1.00 parts by mass, 1.00 to 10.00 parts by mass, or 1.00 to 1.50 parts by mass. From a similar perspective, the group of compounds included in component (C) or the content of those compounds (content of glycerin polymers, polyglycerins, etc.) may also be within the ranges described above.

[0066] The slurry according to this embodiment may contain, as component (D), a nitrogen-containing compound having two or more nitrogen atoms bonded to a hydroxyalkyl group (hereinafter, optionally referred to as "component (D)"). As component (D), compounds other than those corresponding to components (A), (B), and (C) can be used.

[0067] In component (D), a hydroxyalkyl group is directly bonded to the nitrogen atom, and a hydroxyl group is directly bonded to the alkyl group directly bonded to the nitrogen atom. In component (D), an alkyl group that does not have substituents other than a hydroxyl group can be used as the hydroxyalkyl group bonded to the nitrogen atom.

[0068] Component (D) may contain a compound having a nitrogen atom bonded to two hydroxyalkyl groups, or a compound having two or more nitrogen atoms bonded to two hydroxyalkyl groups, from the viewpoint of easily obtaining high flatness.

[0069] The number of nitrogen atoms in one molecule of component (D) may be 2 to 5, 2 to 4, or 2 to 3, from the viewpoint of easily obtaining excellent step-reducing properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for the protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The number of hydroxyl groups in one molecule of component (D) may be 2 to 6, 2 to 5, 2 to 4, 3 to 6, 3 to 5, 3 to 4, 4 to 6, or 4 to 5, from the viewpoint of easily obtaining excellent step-reducing properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for the protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness.

[0070] Component (D) may have a hydroxyalkyl group having 1 to 4, 2 to 4, 3 to 4, 1 to 3, or 2 to 3 carbon atoms as the hydroxyalkyl group bonded to the nitrogen atom, from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining high polishing speeds for protrusions in silicon oxide members with uneven surfaces, easily obtaining high polishing speeds for silicon oxide in blanket wafers, or easily obtaining high flatness. Component (D) may have a hydroxyalkyl group having 1 to 3 or 1 to 2 hydroxyl groups as the hydroxyalkyl group bonded to the nitrogen atom, from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining high polishing speeds for protrusions in silicon oxide members with uneven surfaces, easily obtaining high polishing speeds for silicon oxide in blanket wafers, or easily obtaining high flatness.

[0071] Component (D) may have an alkylene group between two nitrogen atoms to which hydroxyalkyl groups are bonded, from the viewpoints of easily obtaining excellent step coverage in a silicon oxide member having irregularities, easily obtaining a high polishing rate of the convex portions in a silicon oxide member having irregularities, easily obtaining a high polishing rate of silicon oxide in a blanket wafer, or easily obtaining high flatness. The number of carbon atoms of such an alkylene group may be 1 to 4, 2 to 4, 1 to 3, 2 to 3, or 1 to 2 from the viewpoints of easily obtaining excellent step coverage in a silicon oxide member having irregularities, easily obtaining a high polishing rate of the convex portions in a silicon oxide member having irregularities, easily obtaining a high polishing rate of silicon oxide in a blanket wafer, or easily obtaining high flatness.

[0072] Component (D) may contain a compound represented by the following general formula (D1) from the viewpoints of easily obtaining excellent step coverage in a silicon oxide member having irregularities, easily obtaining a high polishing rate of the convex portions in a silicon oxide member having irregularities, easily obtaining a high polishing rate of silicon oxide in a blanket wafer, or easily obtaining high flatness.

[0073] [In the formula, n is an integer of 1 or more, and R １１ , R １２ , R １３ and R １４ each independently represent a hydrogen atom or an organic group, and one or both of R １１ and R １２ are hydroxyalkyl groups, and one or both of R １３ and R １４ are hydroxyalkyl groups. ]

[0074] n may be within the above-mentioned range as the number of carbon atoms in the alkylene group between two nitrogen atoms to which a hydroxyalkyl group is bonded, from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The organic group may be a substituted or unsubstituted alkyl group, a hydroxyalkyl group, or a group having a nitrogen atom to which a hydroxyalkyl group is bonded. Examples of substituents on the alkyl group include hydroxyl groups, carboxyl groups, carboxylic acid bases, amino groups, sulfo groups, nitro groups, etc. １１ , R １２ , R １３ or R １４ When is a hydroxyalkyl group, the number of carbon atoms in the hydroxyalkyl group may be within the above-mentioned ranges as the number of carbon atoms of the hydroxyalkyl group bonded to the nitrogen atom, from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness.

[0075] (D) Examples of component include ethylenedinitrilotetrapropanol (1,1',1'',1'''-ethylenedinitrilotetra-2-propanol (also known as N,N,N',N'-tetrakis(2-hydroxypropyl)ethylenediamine)), ethylenedinitrilotetraethanol (2,2',2'',2'''-ethylenedinitrilotetraethanol (also known as N,N,N',N'-tetrakis(2-hydroxyethyl)ethylenediamine)), N,N,N',N'',N''-pentakis(2-hydroxypropyl)diethylenetriamine, etc. Component (D) may contain at least one selected from the group consisting of ethylenedinitrilotetraethanol and ethylenedinitrilotetrapropanol, and may contain ethylenedinitrilotetrapropanol, from the viewpoint of easily obtaining excellent step-reducing properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. Component (D) may contain a compound that does not have at least one selected from the group consisting of a carboxyl group and a carboxylic acid base, from the viewpoint of easily obtaining excellent step-reducing properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness.

[0076] The molecular weight of component (D) may be within the following range, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The molecular weight of component (D) may be 50 or more, 60 or more, 70 or more, 80 or more, 85 or more, 90 or more, 100 or more, 110 or more, 120 or more, 123 or more, 125 or more, 130 or more, 140 or more, 148 or more, 150 or more, 160 or more, 170 or more, 180 or more, 200 or more, 210 or more, 230 or more, 250 or more, greater than 250, or 280 or more. The molecular weight of component (D) may be 1000 or less, less than 1000, 900 or less, 800 or less, 700 or less, 600 or less, 500 or less, less than 500, 400 or less, 350 or less, or 300 or less. From these viewpoints, the molecular weight of component (D) may be 50 to 1000, 50 to 500, 50 to 300, 200 to 1000, 200 to 500, 200 to 300, 250 to 1000, 250 to 500, or 250 to 300. From a similar viewpoint, the molecular weight of the group of compounds included in component (D) or the compounds themselves (molecular weight of compounds represented by general formula (D1), ethylenedinitrilotetrapropanol, etc.) may also be within the above-mentioned ranges.

[0077] The content of component (D) may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (D) may be 0.001% by mass or more, 0.003% by mass or more, 0.005% by mass or more, 0.008% by mass or more, 0.010% by mass or more, 0.012% by mass or more, 0.015% by mass or more, 0.018% by mass or more, or 0.020% by mass or more. The content of component (D) may be 1.000% by mass or less, 0.800% by mass or less, 0.500% by mass or less, 0.300% by mass or less, 0.100% by mass or less, 0.080% by mass or less, 0.050% by mass or less, 0.040% by mass or less, 0.030% by mass or less, or 0.020% by mass or less. From these viewpoints, the content of component (D) may be 0.001 to 1.000% by mass, 0.001 to 0.100% by mass, 0.001 to 0.050% by mass, 0.005 to 1.000% by mass, 0.005 to 0.100% by mass, 0.005 to 0.050% by mass, 0.010 to 1.000% by mass, 0.010 to 0.100% by mass, or 0.010 to 0.050% by mass. From a similar viewpoint, the group of compounds included in component (D) or the content of those compounds (the content of compounds represented by general formula (D1), ethylenedinitrilotetrapropanol, etc.) may also be within the ranges described above.

[0078] The content of component (D) may be within the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (D) may be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 15 parts by mass or more, 20 parts by mass or more, 25 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, or 40 parts by mass or more. The content of component (D) may be 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, or 40 parts by mass or less. From these viewpoints, the content of component (D) may be 1 to 500 parts by mass, 1 to 100 parts by mass, 1 to 50 parts by mass, 10 to 500 parts by mass, 10 to 100 parts by mass, 10 to 50 parts by mass, 30 to 500 parts by mass, 30 to 100 parts by mass, or 30 to 50 parts by mass. From a similar viewpoint, the group of compounds included in component (D) or the content of the compounds (content of compounds represented by general formula (D1), ethylenedinitrilotetrapropanol, etc.) may also be within the ranges described above.

[0079] The content of component (D) may be within the following ranges relative to 100 parts by mass of the nonionic surfactant contained in the slurry according to this embodiment (total amount of component (A) and nonionic surfactants not corresponding to component (A)), or 100 parts by mass of component (A), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members having irregularities, easily obtaining a high polishing speed of the protrusions in silicon oxide members having irregularities, easily obtaining a high polishing speed of silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (D) may be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, 30 parts by mass or more, 35 parts by mass or more, 40 parts by mass or more, 45 parts by mass or more, 50 parts by mass or more, 55 parts by mass or more, 60 parts by mass or more, 70 parts by mass or more, 80 parts by mass or more, 90 parts by mass or more, or 100 parts by mass or more. The content of component (D) is 1000 parts by mass or less, 800 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 250 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 150 parts by mass or less The amount may be less than or equal to 120 parts by weight, less than 100 parts by weight, less than 90 parts by weight, less than 80 parts by weight, less than 70 parts by weight, less than 60 parts by weight, less than 55 parts by weight, less than 50 parts by weight, less than 45 parts by weight, or less than 40 parts by weight. From these viewpoints, the content of component (D) may be 1 to 1000 parts by mass, 1 to 200 parts by mass, 1 to 80 parts by mass, 1 to 45 parts by mass, 10 to 1000 parts by mass, 10 to 200 parts by mass, 10 to 80 parts by mass, 10 to 45 parts by mass, 45 to 1000 parts by mass, 45 to 200 parts by mass, 45 to 80 parts by mass, 80 to 1000 parts by mass, or 80 to 200 parts by mass. From a similar viewpoint, the group of compounds included in component (D) or the content of the compounds (content of compounds represented by general formula (D1), ethylenedinitrilotetrapropanol, etc.) may also be within the ranges described above.

[0080] The content of component (D) may be in the following ranges relative to 100 parts by mass of component (B), from the viewpoint of easily obtaining excellent step-eliminating properties in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for protrusions in silicon oxide members with uneven surfaces, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (D) may be 10 parts by mass or more, 50 parts by mass or more, 100 parts by mass or more, 150 parts by mass or more, 200 parts by mass or more, 250 parts by mass or more, 300 parts by mass or more, 350 parts by mass or more, 400 parts by mass or more, 450 parts by mass or more, 500 parts by mass or more, 550 parts by mass or more, 600 parts by mass or more, or 650 parts by mass or more. The content of component (D) may be 2000 parts by mass or less, 1500 parts by mass or less, 1200 parts by mass or less, 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, or 400 parts by mass or less. From these viewpoints, the content of component (D) may be 10 to 2000 parts by mass, 10 to 1000 parts by mass, 10 to 500 parts by mass, 100 to 2000 parts by mass, 100 to 1000 parts by mass, 100 to 500 parts by mass, 500 to 2000 parts by mass, or 500 to 1000 parts by mass. From a similar viewpoint, the group of compounds included in component (D) or the content of the compounds (content of compounds represented by general formula (D1), ethylenedinitrilotetrapropanol, etc.) may also be within the above-mentioned ranges.

[0081] The content of component (D) may be within the following ranges per 100 parts by mass of component (C), from the viewpoint of easily obtaining excellent step-elimination properties in silicon oxide members with irregularities, easily obtaining a high polishing speed for protrusions in silicon oxide members with irregularities, easily obtaining a high polishing speed for silicon oxide in blanket wafers, or easily obtaining high flatness. The content of component (D) may be 0.1 parts by mass or more, 0.5 parts by mass or more, 1.0 parts by mass or more, 1.5 parts by mass or more, 2.0 parts by mass or more, 2.5 parts by mass or more, 3.0 parts by mass or more, 3.5 parts by mass or more, or 4.0 parts by mass or more. The content of component (D) may be 50 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 15 parts by mass or less, 10 parts by mass or less, 8.0 parts by mass or less, 6.0 parts by mass or less, 5.0 parts by mass or less, or 4.0 parts by mass or less. From these viewpoints, the content of component (D) may be 0.1 to 50 parts by mass, 0.1 to 10 parts by mass, 0.1 to 5.0 parts by mass, 1.0 to 50 parts by mass, 1.0 to 10 parts by mass, 1.0 to 5.0 parts by mass, 3.0 to 50 parts by mass, 3.0 to 10 parts by mass, or 3.0 to 5.0 parts by mass. From a similar viewpoint, the group of compounds included in component (D) or the content of the compounds (content of compounds represented by general formula (D1), ethylenedinitrilotetrapropanol, etc.) may also be within the above-mentioned ranges.

[0082] The slurry according to this embodiment may contain at least one selected from the group consisting of acids and bases. Acids and bases can be used, for example, to adjust the pH of the slurry. As acids and bases, compounds that do not fall under components (A), (B), (C), and (D) can be used. Examples of acids include organic acids such as propionic acid and acetic acid (excluding compounds corresponding to amino acids); inorganic acids such as nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, and boric acid; and amino acids such as glycine. Examples of bases include ammonia, sodium hydroxide, potassium hydroxide, and calcium hydroxide. From the viewpoint of suppressing pH fluctuations while suppressing the effect on abrasive grains, the acid may include organic acids and acetic acid, and the base may include ammonia.

[0083] The acid or base content may be within the following ranges based on the total mass of the slurry, from the viewpoint of suppressing the effect on abrasive grains while easily suppressing pH fluctuations: The acid or base content may be 0.0001% by mass or more, 0.0005% by mass or more, 0.0010% by mass or more, 0.0030% by mass or more, 0.0050% by mass or more, 0.0060% by mass or more, 0.0080% by mass or more, 0.0090% by mass or more, or 0.0100% by mass or more. The acid or base content may be 0.1000% by mass or less, 0.0800% by mass or less, 0.0500% by mass or less, 0.0300% by mass or less, 0.0200% by mass or less, 0.0150% by mass or less, 0.0100% by mass or less, 0.0090% by mass or less, or 0.0080% by mass or less. From these viewpoints, the content of the acid or base may be 0.0001 to 0.1000% by mass, 0.0001 to 0.0200% by mass, 0.0001 to 0.0090% by mass, 0.0010 to 0.1000% by mass, 0.0010 to 0.0200% by mass, 0.0010 to 0.0090% by mass, 0.0090 to 0.1000% by mass, or 0.0090 to 0.0200% by mass. From a similar viewpoint, the group of compounds included in the acid or the content of the compound (content of organic acids, acetic acid, etc.) may also be within the above ranges, and the group of compounds included in the base or the content of the compound (content of ammonia, etc.) may also be within the above ranges.

[0084] The slurry according to this embodiment may contain other additives (components other than components (A), (B), (C), (D), acids, bases, and water). Examples of such additives include organic solvents (ethanol, acetone, etc.); pyrone compounds having a γ-pyrone ring and a hydroxyl group bonded to a carbon atom adjacent to the carbon atom of the carbonyl group of the γ-pyrone ring (hereinafter referred to as "pyrone compound X"); and oxidizing agents (for example, metal oxidizing agents such as hydrogen peroxide). The slurry according to this embodiment may contain pyrone compound X, or may not contain pyrone compound X substantially. The content of pyrone compound X may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, less than 0.01% by mass, 0.001% by mass or less, less than 0.001% by mass, or less than 0.0001% by mass, based on the total mass of the slurry, and may be substantially 0% by mass. The slurry according to this embodiment may contain an oxidizing agent, or may not contain an oxidizing agent substantially. The amount of oxidizing agent may be 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, less than 0.01% by mass, 0.001% by mass or less, less than 0.001% by mass, or less than 0.0001% by mass, based on the total mass of the slurry, and may be substantially 0% by mass.

[0085] The slurry according to this embodiment may contain water. The water is not particularly limited and may include at least one selected from the group consisting of deionized water, ion-exchanged water, and ultrapure water.

[0086] The pH (at 25°C) of the slurry according to this embodiment may be within the following ranges, from the viewpoint of easily obtaining suitable reactivity between the slurry and the workpiece to be polished, or from the viewpoint of easily obtaining excellent stability of the abrasive grains. The pH may be 3.0 or higher, 3.5 or higher, 4.0 or higher, 4.5 or higher, 5.0 or higher, 5.5 or higher, 6.0 or higher, 6.5 or higher, or 7.0 or higher. The pH may be 12.0 or lower, 11.5 or lower, 11.0 or lower, 10.5 or lower, 10.0 or lower, 9.5 or lower, 9.0 or lower, 8.5 or lower, 8.0 or lower, 7.5 or lower, or 7.0 or lower. From these perspectives, the pH may be 3.0 to 12.0, 3.0 to 9.0, 3.0 to 8.0, 5.0 to 12.0, 5.0 to 9.0, 5.0 to 8.0, 6.0 to 12.0, 6.0 to 9.0, or 6.0 to 8.0. The pH can be measured by the method described in the examples below.

[0087] The slurry according to this embodiment may be stored as a storage liquid with a reduced amount of water compared to that used during polishing. One embodiment of the slurry according to this embodiment may be such a storage liquid. The storage liquid can be used by diluting it with water before or during polishing.

[0088] The slurry according to this embodiment may be stored as a one-component slurry containing at least abrasive grains, component (A), and component (B), or as a multi-component slurry (slurry set) having at least a first liquid and a second liquid. In a multi-component slurry, the components of the slurry may be separated into a first liquid and a second liquid so that at least the first liquid and the second liquid are mixed to form the slurry (slurry for polishing). For example, in a multi-component slurry, the components of the slurry described above may be stored separated into at least a first liquid and a second liquid, the first liquid may contain abrasive grains, and the second liquid may contain at least one selected from the group consisting of component (A) and component (B). In this case, the multi-component slurry may be configured such that the first liquid contains one of component (A) and component (B), the second liquid contains the other of component (A) and component (B), or the second liquid may contain both component (A) and component (B). Additives other than components (A) and (B) may be included in either the first liquid or the second liquid. The slurry components may be stored in three or more separate liquids. In a multi-liquid slurry, the first liquid and the second liquid may be mixed before or during polishing. In a multi-liquid slurry, the first liquid and the second liquid may be supplied to a polishing platen separately, and the first liquid and the second liquid may be mixed on the polishing platen. The liquids constituting the multi-liquid slurry (first liquid, second liquid, etc.) may be stored as storage liquids with less water than used during polishing, and may be used by diluting with water before or during polishing.

[0089] The slurry manufacturing method according to this embodiment comprises a mixing step of mixing abrasive grains and at least one selected from the group consisting of component (A) and component (B). The mixing step may be a step of obtaining slurry by mixing abrasive grains, component (A) and component (B) with each other. The mixing step may include a step of obtaining a mixture by mixing abrasive grains and one of component (A) and component (B) with each other, and a step of obtaining slurry by mixing the mixture with the other of component (A) and component (B) with each other. The mixing step may include a step of obtaining a mixture by mixing component (A) and component (B) with each other, and a step of obtaining slurry by mixing the mixture with abrasive grains with each other.

[0090] The polishing method according to this embodiment comprises a polishing step of polishing a member to be polished using a slurry according to this embodiment. The member to be polished may contain at least one selected from the group consisting of silicon dioxide and polysilicon, may contain silicon dioxide, may contain polysilicon, or may contain both silicon dioxide and polysilicon. The shape of the member to be polished is not particularly limited and may be, for example, a film. In the polishing step, it is possible to polish the surface of the member to be polished, and the surface to be polished that contains at least one selected from the group consisting of silicon dioxide and polysilicon may be polished. In the polishing step, at least a part of the member to be polished can be polished and removed. The slurry used in the polishing step (slurry according to this embodiment) may be the one-liquid slurry described above, may be a slurry obtained by diluting the storage liquid described above with water, or may be a slurry obtained by mixing at least a first liquid and a second liquid in the multi-liquid slurry described above. The member to be polished is not particularly limited and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0091] The method for manufacturing a component according to this embodiment includes a component manufacturing step of obtaining a component using a member to be polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the method for manufacturing a component according to this embodiment. The component according to this embodiment is not particularly limited and may be an electronic component (for example, a semiconductor component such as a semiconductor package), a wafer (for example, a semiconductor wafer), or a chip (for example, a semiconductor chip). As one embodiment of the method for manufacturing a component according to this embodiment, the method for manufacturing an electronic component according to this embodiment includes a step of obtaining an electronic component using a member to be polished by the polishing method according to this embodiment. As one embodiment of the method for manufacturing a component according to this embodiment, the method for manufacturing a semiconductor component according to this embodiment includes a step of obtaining a semiconductor component (for example, a semiconductor package) using a member to be polished by the polishing method according to this embodiment. The method for manufacturing a component according to this embodiment may include a polishing step of polishing the member to be polished by the polishing method according to this embodiment before the component manufacturing step.

[0092] As one aspect of the component manufacturing process according to this embodiment, the component manufacturing process may include a piece-forming step in which the member to be polished by the polishing method according to this embodiment is pieced into individual pieces. The piece-forming step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing process according to this embodiment, the electronic component manufacturing process according to this embodiment may include a step of obtaining an electronic component (e.g., a semiconductor component) by piece-forming the member to be polished by the polishing method according to this embodiment. As one aspect of the component manufacturing process according to this embodiment, the semiconductor component manufacturing process according to this embodiment may include a step of obtaining a semiconductor component (e.g., a semiconductor package) by piece-forming the member to be polished by the polishing method according to this embodiment.

[0093] The method for manufacturing a part according to this embodiment may include, as one aspect of the part manufacturing process, a connection step of connecting (for example, electrically connecting) a member to be polished by the polishing method according to this embodiment to another connected body. The connected body connected to the member to be polished by the polishing method according to this embodiment is not particularly limited and may be the member to be polished by the polishing method according to this embodiment, or it may be a connected body different from the member to be polished by the polishing method according to this embodiment. In the connection step, the member to be polished and the connected body may be directly connected (connected in a state where the member to be polished and the connected body are in contact), or they may be connected via another member (such as a conductive member). The connection step can be performed before the individualization step, after the individualization step, or before and after the individualization step.

[0094] The connection step may be a step of connecting the surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connected body, or a step of connecting the connecting surface of the member to be polished, which has been polished by the polishing method according to this embodiment, to the connecting surface of the connected body. The connecting surface of the member to be polished may be the surface of the member to be polished, which has been polished by the polishing method according to this embodiment. By the connection step, a connected body comprising the member to be polished and the connected body can be obtained. In the connection step, if the connecting surface of the member to be polished has a metal part, the connected body may be brought into contact with the metal part. In the connection step, if the connecting surface of the member to be polished has a metal part and the connecting surface of the connected body has a metal part, the metal parts may be brought into contact with each other. The metal part may contain copper.

[0095] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises a member to be polished by the polishing method according to this embodiment, and at least one selected from the group consisting of the component according to this embodiment.

[0096] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0097] <Preparation of Cerium Hydroxide Slurry> First, 7603g of water was placed in a container. Next, a 50% by mass aqueous solution of cerium ammonium nitrate (Ce(NH)) was added to this container. ４ ) ２ (NO ３ ) ６ A metal salt aqueous solution was obtained by adding 1037 g of (formula weight 548.2 g / mol, manufactured by Nippon Chemical Industrial Co., Ltd., product name: 50% CAN solution) and mixing, and then adjusting the liquid temperature to 40°C.

[0098] Next, imidazole was dissolved in water to obtain 4566 g of an aqueous solution with a concentration of 0.7 mol / L, and then the solution temperature was adjusted to 20-25°C to obtain an alkaline solution.

[0099] The container containing the aforementioned metal salt solution was placed in a water tank, and the water temperature in the tank was adjusted to 40°C using an external circulation device, the Coolnics Circulator (manufactured by Tokyo Rikakikai Co., Ltd. (EYELA), product name: Cooling Thermo Pump CTP101). The temperature of the metal salt solution was maintained at 40°C, and a stirring speed of 400 min was maintained using a 3-blade pitch paddle with a blade length of 5 cm. －１ While stirring the metal salt aqueous solution, add 0.0000085 ml of the above-mentioned alkaline solution. ３ By adding it to the container at a mixing rate of 8.5 mL / min, a slurry precursor 1 (pH: 2.2) containing abrasive particles with cerium hydroxide was obtained.

[0100] Slurry precursor 2 was obtained by ultrafiltration of the above-mentioned slurry precursor 1 while circulating it using a hollow fiber filter with a fractional molecular weight cutoff of 50,000. In ultrafiltration, ions were removed until the conductivity was 50 mS / m or less. Ultrafiltration was performed by adding water to maintain a constant water level in the tank containing slurry precursor 1 using a liquid level sensor. Cerium hydroxide slurry was obtained by adding water to slurry precursor 2 to adjust the abrasive content to 1.0 mass%.

[0101] <Preparation of Polishing Slurry> The polishing slurry was prepared by mixing the above-mentioned cerium hydroxide slurry with component A from Table 1, component B from Table 1, polyglycerin (manufactured by Sakamoto Pharmaceutical Co., Ltd., product name "Polyglycerin #750", weight-average molecular weight: 758.0), ethylenedinitrilotetrapropanol (N,N,N',N'-tetrakis(2-hydroxypropyl)ethylenediamine, manufactured by Nippon Emulsifier Co., Ltd., product name "Amino Alcohol EDA-P4"), acetic acid, ammonia, and water. The content of each component in each polishing slurry (based on the total mass of the polishing slurry) was as follows: abrasive grain content was 0.050% by mass, component A and component B content was as shown in Table 1, polyglycerin content was 0.500% by mass, ethylene dinitrilotetrapropanol content was 0.020% by mass, acetic acid content was 0.008% by mass, and ammonia content was 0.010% by mass. The following compounds were used as component A and component B in Table 1.

[0102] (Component A: Nonionic surfactant) Component A1: Polyoxyethylene cumylphenyl ether (manufactured by Takemoto Oil Co., Ltd., product name: Takesurf D-7010, number of aromatic rings: 2, HLB value: 13.4) Component A2: Polyoxyethylene (10) octylphenyl ether (manufactured by Fujifilm Wako Pure Chemical Industries Ltd., number of aromatic rings: 1, HLB value: 13.6) Component A3: 2-Ethylhexanol EOPO copolymer (9EO) (Polyoxyethylene polyoxypropylene 2-ethylhexyl ether, manufactured by Sigma-Aldrich Co. LLC, number of aromatic rings: 0, HLB value: 12.5) Component A4: Polyoxyethylene distyrenated phenyl ether (manufactured by Kao Corporation, product name: Emulgen A-60, number of aromatic rings: 3) Ingredient A5: Polyoxyethylene distyrenated phenyl ether (manufactured by Kao Corporation, product name: Emulgen A-500, number of aromatic rings: 3)

[0103] (Component B: Cationic polymer) Component B1: Diallyldimethylammonium chloride / acrylamide copolymer (manufactured by Nitto Boseki Medical Co., Ltd., product name: PAS-J-81, weight-average molecular weight: 180,000) Component B2: Diallyldimethylammonium chloride polymer (manufactured by Senka Co., Ltd., product name: Unisense FPA1001L, weight-average molecular weight: 100,000 to 500,000) Component B3: Dimethylamine / ammonia / epichlorohydrin polycondensate (manufactured by Senka Co., Ltd., product name: Unisense KHE1000L, weight-average molecular weight: 100,000 to 500,000)

[0104] <Measurement of Abrasive Grain Size> The average particle size (D50) of the abrasive grains in the polishing slurry described above was measured under the following conditions. In both the example and comparative example, the average particle size of the abrasive grains was 1.0 to 20.0 nm. Measurement temperature: 25°C Measurement device: Wyatt Technology Co., Ltd., product name "Mobius" Measurement method: Approximately 4 mL of polishing slurry was placed in a 1 cm square cell, and then the cell was placed in the measurement device. Measurements were performed under the conditions of laser wavelength 532 nm, measurement temperature 25°C, measurement angle 163.5°, and number of accumulations 10 times. The D50 value of the particle size distribution calculated from the scattering intensity converted to mass of the measurement results was obtained as the average particle size.

[0105] <Zeta Potential Measurement> An appropriate amount of abrasive slurry was placed in a product called "DelsaNano C" manufactured by Beckman Coulter, Inc., and measurements were taken twice at 25°C. The average of the displayed zeta potentials was obtained as the zeta potential. In both the example and comparative example, the zeta potential of the abrasive grains was positive.

[0106] <pH Measurement> The pH of the polishing slurry described above was measured under the following conditions. The pH was 7.0 in both the example and the comparative example. Measurement temperature: 25°C Measuring device: Model (D-71) manufactured by Horiba, Ltd. Measurement method: A pH meter was calibrated at three points using phthalate pH standard solution (pH: 4.01), neutral phosphate pH standard solution (pH: 6.86), and borate pH standard solution (pH: 9.18) as pH standard solutions. After that, the electrode of the pH meter was placed in the slurry, and the pH was measured using the above measuring device after 2 minutes or more had elapsed and the pH had stabilized.

[0107] <Polishing Characteristics> (Evaluation of Blanket Wafer) A silicon oxide film (SiO₂) is applied to the surface of the blanket wafer (BKW). ２ A wafer with a diameter of 300 mm was prepared.

[0108] The wafer described above was polished using the polishing slurry described above under the following polishing conditions: Polishing apparatus: Reflexion (Applied Materials, Inc.) Slurry flow rate: 200 mL / min Polishing pad: Foamed polyurethane resin with closed cells (DUPONT Corporation, model number: IKonic 4250H) Polishing pressure: 14.7 kPa (2 psi) Plate rotation speed: 93 min －１ Head rotation speed: 87 min －１ Polishing time: 30 seconds. Cleaning: After polishing, the wafer was washed with water and then dried with a spin dryer.

[0109] Using an optical interferometry film thickness measuring device (device name: NOVA i500) manufactured by Nova Measuring Instruments, the film thickness of the silicon oxide film on the aforementioned blanket wafer before and after polishing was measured at 65 points. The 65 film thickness measurements were taken on a straight line including the center of the blanket wafer, with the center of the blanket wafer as the reference point, at positions of 149 mm, 148 mm, 147 mm, and 145 mm, at 5 mm intervals between 145 mm and -145 mm (140 mm, 135 mm, ..., -135 mm, -140 mm), and at -145 mm, -147 mm, -148 mm, and -149 mm (with the center of the blanket wafer as the reference point, the distance opposite to the positive distance is indicated by a negative value). The change in film thickness was calculated using the average value of the 65 film thickness measurements. The silicon oxide polishing rate was calculated based on the change in film thickness and the polishing time. The results are shown in Table 1.

[0110] (Pattern Wafer Evaluation 1) A wafer A1 was prepared as a pattern wafer (PTW) comprising a silicon substrate, a first silicon oxide film disposed over the entire main surface of the silicon substrate, a patterned polysilicon film with Line / Space = 50 / 50 μm (film thickness: 210 nm), and a second silicon oxide film disposed on top of the polysilicon film and the first silicon oxide film (film thickness: 420 nm). A step was formed on the surface of the second silicon oxide film due to the step between the first silicon oxide film and the polysilicon film. Eight types of wafers A2 were produced by polishing the second silicon oxide film of wafer A1 using a commercially available polishing solution (manufactured by Resonac Co., Ltd., product name: HS-0220), with step differences on the surface of the second silicon oxide film of 160 nm, 150 nm, 140 nm, 130 nm, 120 nm, 110 nm, 100 nm, and 90 nm, respectively. The step difference was measured using an optical interferometry film thickness analyzer (Nova Corporation, model name: NOVA i500).

[0111] The aforementioned wafer A2 was polished using the polishing slurry described above under the following polishing conditions: Polishing apparatus: Reflexion (Applied Materials, Inc.) Slurry flow rate: 200 mL / min Polishing pad: Foamed polyurethane resin with closed cells (DUPONT Corporation, model number: IKonic 4250H) Polishing pressure: 20.7 kPa (3 psi) Plate rotation speed: 93 min －１ Head rotation speed: 87 min －１ Polishing time: 60 seconds. Cleaning: After polishing, the wafer was washed with water and then dried with a spin dryer.

[0112] After polishing, the step height on the surface of the second silicon oxide film on wafer A2 was measured using an optical interference film thickness measuring device (Nova Corporation, device name: NOVA i500). As an indicator of step height reduction, Table 1 shows the pre-polishing step height of the wafer with the highest pre-polishing step height among the wafers with reduced step height after polishing. "<90" in Table 1 indicates that the step height did not decrease after polishing in any of the eight types of wafer A2. Furthermore, as the polishing speed of the silicon oxide on the protrusions in Examples 1 to 9, Table 1 shows the polishing speed of the step height of the wafer with the highest pre-polishing step height among the wafers with reduced step height after polishing. The polishing speed of the step height was calculated based on the change in the thickness of the second silicon oxide film (change in one location) and the polishing time.

[0113] (Pattern Wafer Evaluation 2) A wafer B1 was prepared as a pattern wafer (PTW) comprising a silicon substrate, a first silicon oxide film disposed over the entire main surface of the silicon substrate, a patterned polysilicon film with Line / Space = 20 / 80 μm (film thickness: 210 nm), and a second silicon oxide film disposed on top of the polysilicon film and the first silicon oxide film (film thickness: 420 nm). A step was formed on the surface of the second silicon oxide film due to a step between the first silicon oxide film and the polysilicon film. Wafer B2 was prepared by polishing the second silicon oxide film of wafer B1 with a commercially available polishing solution (manufactured by Resonac Co., Ltd., product name: HS-0220) until the polysilicon film was exposed.

[0114] Wafer B2 was polished using the polishing slurry described above (polishing slurry of Examples 1, 2, 4, 6, 8, and 9) under the following polishing conditions: Polishing apparatus: Reflexion (Applied Materials, Inc.) Slurry flow rate: 200 mL / min Polishing pad: Foamed polyurethane resin with closed cells (DUPONT Corporation, model number: IKonic 4250H) Polishing pressure: 14.7 kPa (2 psi) Plate rotation speed: 93 min －１ Head rotation speed: 87 min －１ Polishing time: 30 seconds. Cleaning: After polishing, the wafer was washed with water and then dried with a spin dryer.

[0115] After polishing, the polishing rate of the polysilicon (pSi polishing rate) was calculated based on the change in thickness of the polysilicon film (change in one location) and the polishing time. The polishing rate of the silicon oxide in the recess (Space area) adjacent to the polysilicon film was calculated based on the change in thickness of the second silicon oxide film (change in one location) and the polishing time. The results are shown in Table 1.

[0116]

Claims

1. A slurry containing abrasive grains, a nonionic surfactant having two or fewer aromatic rings, and a cationic polymer.

2. The slurry according to claim 1, wherein the nonionic surfactant comprises a polyoxyalkylene alkylphenyl ether.

3. The slurry according to claim 2, wherein the polyoxyalkylene alkylphenyl ether has two aromatic rings.

4. The slurry according to claim 2, wherein the polyoxyalkylene alkylphenyl ether has one aromatic ring.

5. The slurry according to claim 1, wherein the nonionic surfactant comprises a polyoxyalkylene alkyl ether that does not have an aromatic ring.

6. The slurry according to claim 1, wherein the cationic polymer comprises a polymer having a diallyldialkylammonium salt as a monomer unit.

7. The slurry according to claim 1, wherein the cationic polymer comprises a reaction product of a composition containing at least dimethylamine and epichlorohydrin.

8. The slurry according to claim 1, further comprising polyglycerin.

9. The slurry according to claim 1, further comprising a nitrogen-containing compound having two or more nitrogen atoms bonded to a hydroxyalkyl group.

10. The slurry according to claim 9, wherein the nitrogen-containing compound comprises ethylene dinitrilotetrapropanol.

11. The slurry according to claim 1, wherein the abrasive grains include cerium-based particles.

12. The slurry according to claim 1, wherein the average particle size of the abrasive grains is less than 50.0 nm.

13. The slurry according to claim 1, wherein the pH is 5.0 to 9.

0.

14. A multi-liquid slurry in which the components of the slurry according to any one of claims 1 to 13 are stored separately in at least a first liquid and a second liquid, the first liquid contains the abrasive grains, and the second liquid contains at least one selected from the group consisting of the nonionic surfactant and the cationic polymer.

15. A polishing method comprising the step of polishing a member to be polished using a slurry described in any one of claims 1 to 13.

16. A method for manufacturing a part, comprising the step of obtaining a part using a member to be polished by the polishing method described in claim 15.

17. A method for manufacturing a semiconductor component, comprising the step of obtaining a semiconductor component using a member to be polished by the polishing method described in claim 15.

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