Display device and electronic apparatus

Abstract

Provided is a display device comprising a plurality of light-emitting elements (110b, 110g, 110r) that are arranged in a matrix on a substrate and radiate light having mutually different wavelengths, wherein: each of the light-emitting elements has a lower electrode (212), a light-emitting layer (220) provided on the lower electrode, an upper electrode (230) provided on the light-emitting layer, a first protective film (240) provided on the upper electrode, and second protective films (214b, 214g, 214r) surrounding the lower electrode; and the film thicknesses of the second protective films differ from each other for each color of the light radiated by the light-emitting elements.

Description

Display device and electronic device

[0001] The present disclosure relates to a display device and an electronic device.

[0002] In recent years, development of display devices using electroluminescence (EL) elements as light-emitting elements has been progressing. In such a display device, for example, a plurality of light-emitting elements having a stacked structure composed of a lower electrode, a light-emitting layer stacked on the lower electrode, and an upper electrode stacked on the light-emitting layer are arranged on a substrate. Then, when a predetermined voltage is supplied to the lower electrode and the upper electrode, the light-emitting layer sandwiched between the lower electrode and the upper electrode emits light.

[0003] International Publication No. 2020 / 004086

[0004] In the manufacture of a display device, in the mask deposition process, for example, red, green, and blue are painted separately (RGB painting), that is, by sequentially depositing light-emitting layers that emit red, green, and blue light, three types of light-emitting elements that emit red, green, and blue light are sequentially manufactured. However, in the manufacturing process of the prior art, when processing the light-emitting element, the lower electrode of the light-emitting element may be damaged by etching or the like.

[0005] Therefore, the present disclosure proposes a display device and an electronic device capable of avoiding damage to the lower electrode during processing of the light-emitting element.

[0006] According to the present disclosure, there is provided a display device including a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light having different wavelengths from each other, each of the light-emitting elements having a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, a first protective film provided on the upper electrode, and a second protective film surrounding the lower electrode, and the film thickness of the second protective film being different for each color of the light emitted by the light-emitting element.

[0007] Furthermore, the present disclosure provides a display device comprising a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, wherein each light-emitting element has a laminated structure consisting of a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, and a first protective film provided on the upper electrode, and a sidewall film consisting of one or more layers covering the side surface of the laminated structure, wherein the number of layers constituting the sidewall film differs for each color of light emitted by the light-emitting element, and at least one of the layers constituting the sidewall film covers the outer periphery of at least one of the plurality of lower electrodes.

[0008] Furthermore, according to the present disclosure, there is an electronic device equipped with a display device, wherein the display device comprises a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths, each of which has a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, a first protective film provided on the upper electrode, and a second protective film surrounding the lower electrode, wherein the thickness of the second protective film differs for each color of light emitted by the light-emitting element.

[0009] Furthermore, according to the present disclosure, there is an electronic device equipped with a display device, wherein the display device comprises a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light having different wavelengths from each other, and each light-emitting element has a laminated structure consisting of a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, and a first protective film provided on the upper electrode, and a sidewall film consisting of one or more layers that covers the side surface of the laminated structure, the number of layers constituting the sidewall film differs for each color of light emitted by the light-emitting element, and at least one of the layers constituting the sidewall film covers the outer periphery of at least one of the plurality of lower electrodes.

[0010] This is a schematic diagram showing an example of the overall configuration of a display device according to an embodiment of the present disclosure. This is a schematic circuit diagram for explaining the wiring relationship in the sub-pixel of the mth row and nth column. This is a cross-sectional view for explaining an example of the configuration of a pixel according to a comparative example. This is a cross-sectional view for explaining an example of the manufacturing method of a pixel according to a comparative example. This is a cross-sectional view (1) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is a cross-sectional view (2) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is a cross-sectional view (3) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is a cross-sectional view (4) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is a cross-sectional view (5) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is a cross-sectional view (6) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is a cross-sectional view (7) for explaining the manufacturing method of a pixel according to the first embodiment of the present disclosure. This is an enlarged view of the main part shown in Figure 6A. This is a cross-sectional view for explaining an example of the configuration of a pixel according to Modification 1 of the first embodiment of the present disclosure. This is a cross-sectional view for explaining an example of the configuration of a pixel according to Modification 2 of the first embodiment of the present disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to Modification 3 of the First Embodiment of the Present Disclosure. This is a cross-sectional view (1) illustrating an example of the pixel configuration according to the Second Embodiment of the Present Disclosure. This is a cross-sectional view (2) illustrating an example of the pixel configuration according to the Second Embodiment of the Present Disclosure. This is a cross-sectional view (3) illustrating an example of the pixel configuration according to the Second Embodiment of the Present Disclosure. This is a cross-sectional view (1) illustrating a method for manufacturing a pixel according to the Third Embodiment of the Present Disclosure. This is a cross-sectional view (2) illustrating a method for manufacturing a pixel according to the Third Embodiment of the Present Disclosure. This is a cross-sectional view (3) illustrating a method for manufacturing a pixel according to the Third Embodiment of the Present Disclosure. This is a cross-sectional view (4) illustrating a method for manufacturing a pixel according to the Third Embodiment of the Present Disclosure. This is a cross-sectional view (5) illustrating a method for manufacturing a pixel according to the Third Embodiment of the Present Disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to the Third Embodiment of the Present Disclosure.This is a plan view illustrating an example of the pixel configuration according to the third embodiment of this disclosure. This is a cross-sectional view illustrating an example of the pixel configuration according to a modified example of the third embodiment of this disclosure. This is a conceptual diagram (1) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (2) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (3) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (4) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength-selecting part. This is a conceptual diagram (No. 5) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength selection part. This is a conceptual diagram (No. 6) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength selection part. This is a conceptual diagram (No. 7) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength selection part. This is a schematic cross-sectional view illustrating the first example of a resonator structure. This is a schematic cross-sectional view illustrating the second example of a resonator structure. This is a schematic cross-sectional view illustrating the third example of a resonator structure. This is a schematic cross-sectional view illustrating the fourth example of a resonator structure. This is a schematic cross-sectional view illustrating the fifth example of a resonator structure. This is a schematic cross-sectional view illustrating the sixth example of a resonator structure. This is a schematic cross-sectional view illustrating the seventh example of a resonator structure. This is a front view showing an example of the appearance of a digital still camera. This is a rear view showing an example of the appearance of a digital still camera. This is an external view of a head-mounted display. This is an external view of a see-through head-mounted display. This is an external view of a television system. This is an external view of a smartphone. This is a diagram (No. 1) showing the internal configuration of an automobile. This is a diagram (No. 2) showing the internal configuration of an automobile.

[0011] Preferred embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. In this specification and drawings, components having substantially the same functional configuration will be denoted by the same reference numeral to avoid redundant explanation. In addition, in this specification and drawings, multiple components having substantially the same or similar functional configurations may be distinguished by adding a different alphabet after the same reference numeral. However, if there is no particular need to distinguish each of multiple components having substantially the same or similar functional configurations, only the same reference numeral will be used.

[0012] Furthermore, the drawings referenced in the following description are intended to illustrate and facilitate understanding of one embodiment of this disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from those of the actual product. In addition, the apparatus shown in the drawings may be modified in design as appropriate, taking into consideration the following description and known technology.

[0013] The descriptions of specific shapes in the following explanation do not refer only to geometrically defined shapes. More specifically, the descriptions of shapes in the following explanation include light-emitting elements, display devices (light-emitting devices), their manufacturing processes, and shapes that are similar to or have acceptable differences (errors or distortions) in their use and operation.

[0014] Furthermore, in the following descriptions of circuits (electrical connections), unless otherwise specified, "electrically connected" means connecting multiple elements in such a way that electricity (signals) can conduct through them. In addition, "electrically connected" in the following descriptions includes not only cases where multiple elements are directly and electrically connected, but also cases where they are indirectly and electrically connected through other elements.

[0015] The explanation will be presented in the following order: 1. Overall configuration of the display device according to the embodiment of this disclosure 2. Background 3. First embodiment 3.1 Manufacturing method 3.2 Detailed configuration 3.3 Modification 4. Second embodiment 5. Third embodiment 5.1 Manufacturing method 5.2 Detailed configuration 5.3 Modification 6. Summary 7. Modification 7.1 Modification 1 7.2 Modification 2 8. Application examples 9. Supplementary information

[0016] <<1. Overall Configuration of the Display Device According to the Embodiment of the Disclosure>> Referring to Figure 1, an example of the overall configuration of an organic EL (Electro-Luminescence) display device (display device) 10 (hereinafter simply referred to as "display device 10") according to the embodiment of the disclosure, which is used as a display device or lighting device, will be described. Figure 1 is a schematic diagram showing an example of the overall configuration of the display device 10 according to the embodiment of the disclosure.

[0017] The display device 10 is a device in which light-emitting elements such as OLEDs (Organic Light Emitting Diodes) or Micro-OLEDs are formed in an array. Such a display device 10 can be applied as a display device for VR (Virtual Reality), MR (Mixed Reality), or AR (Augmented Reality), an electronic viewfinder (EVF), or a small projector, etc. The display device 10 can also be applied to various lighting devices. Note that the display device 10 may use light-emitting elements made of inorganic materials instead of light-emitting elements made of organic materials such as OLEDs.

[0018] The display device 10 has a display area (pixel array area) and a peripheral area provided around the periphery of the display area. As shown in Figure 1, within the display area of ​​the display device 10, for example, a plurality of subpixels 100R, 100G, and 100B are arranged in a matrix. For example, subpixel 100R can emit red light (for example, light with a wavelength of 580 nm to 640 nm), subpixel 100G can emit green light (for example, light with a wavelength of 510 nm to 550 nm), and subpixel 100B can emit blue light (for example, light with a wavelength of 450 nm to 480 nm). In the following description, when subpixels 100R, 100G, and 100B are not specifically distinguished, they will be referred to as subpixel 100.

[0019] Furthermore, in this embodiment, one pixel 20 is composed of, for example, three types of sub-pixels 100R, 100G, and 100B that emit different light. In this embodiment, the number and arrangement of each of the three types of sub-pixels 100R, 100G, and 100B included in one pixel 20 are not particularly limited. Also, a pixel 20 means the smallest unit (pixel) controlled when controlling the light emission of the display device 10, and is composed of a plurality of sub-pixels 100 that are treated as a single unit during control. In other words, in this embodiment, the display device 10 has a plurality of pixels 20 arranged in a matrix on the substrate 200.

[0020] Furthermore, as shown in Figure 1, a horizontal drive circuit 11 and a vertical drive circuit 12 are provided in the peripheral area of ​​the display device 10.

[0021] The horizontal drive circuit 11 scans each subpixel 100 row by row (in Figure 1, the direction extending along the X direction is called the row direction) when writing a signal to each subpixel, and each scan line SCL ｍ Scanning signals can be supplied sequentially. The horizontal drive circuit 11 can be configured, for example, by a shift register that sequentially shifts (transfers) start pulses in synchronization with the input clock pulses.

[0022] Further, the vertical drive circuit 12 supplies the signal voltage of a signal corresponding to the luminance information supplied from a signal supply source (not shown) to the sub-pixel 100 selected in units of columns (in FIG. 1, the direction extending along the Y direction is referred to as the column direction) via the signal line DTL. ｎ can be supplied.

[0023] In the embodiment of the present disclosure, the configuration of the display device 10 is not limited to the configuration shown in FIG. 1. That is, the configuration shown in FIG. 1 is merely an example, and various configurations can be adopted in the display device 10 according to the embodiment of the present disclosure.

[0024] Next, referring to FIG. 2, the circuit configuration in the sub-pixel 100 at the m-th row and n-th column will be described. FIG. 2 is a schematic circuit diagram for explaining the connection relationship in the sub-pixel 100 at the m-th row and n-th column.

[0025] In the display device 10, as described above, the sub-pixel 100 including the light-emitting element ELP is arranged in a two-dimensional matrix in a state connected to the scanning line SCL extending in the row direction (X direction in FIG. 1) and the signal line DTL extending in the column direction (Y direction in FIG. 1). ｍ and ｎ is arranged in a two-dimensional matrix in a state connected to the signal line DTL extending in the column direction (Y direction in FIG. 1).

[0026] Furthermore, as shown in FIG. 2, the display device 10 has a power supply line PS1 that supplies a driving voltage to the sub-pixel 100 and a common power supply line PS2 that is commonly connected to all the sub-pixels 100. Then, a predetermined driving voltage V etc. is supplied to the power supply line PS1 from a power supply unit (not shown), and a common voltage V (for example, ground potential) is supplied to the common power supply line PS2. ｍ and a common power supply line PS2 commonly connected to all the sub-pixels 100. And, a predetermined driving voltage V etc. is supplied to the power supply line PS1 ｍ from a power supply unit (not shown), and a common voltage V ｃｃ etc. is supplied to the common power supply line PS2, and a common voltage V ｃａｔ (for example, ground potential) is supplied.

[0027] Here, let the number of the scanning lines SCL and the power supply line PS1 be M each. The sub-pixel 100 at the m-th row (where m = 1, 2,..., P) is connected to the m-th scanning line SCL ｍ and the m-th power supply line PS1 ｍ and constitutes one display element row. In FIG. 2, the scanning line SCL ｍ and the power supply line PS1 ｍOnly is shown. Also, let the number of signal lines DTL be N. Subpixel 100 of the nth column (where n = 1, 2..., N) is the nth signal line DTL ｎ It is connected to the signal line DTL in Figure 2. ｎ Only the following is shown. Hereafter, the subpixel 100 located in the mth row and nth column may be referred to as the (n,m)th subpixel 100.

[0028] As explained earlier, the display device 10 is scanned sequentially row by row by the scanning signal from the horizontal drive circuit 11. More specifically, in the display device 10, M subpixels 100 arranged in the mth row are driven simultaneously. In other words, for the M subpixels 100 arranged along the row direction, the timing of their illumination / de-illumination is controlled on a row-by-row basis. For example, if the display frame rate of the display device 10 is FR (frames / second), the scanning period per row (the so-called horizontal scanning period) when the display device 10 is scanned sequentially row by row will be less than (1 / FR) × (1 / P) seconds.

[0029] Furthermore, as shown in Figure 2, the sub-pixel 100 is composed of a light-emitting element ELP and a drive circuit that drives it. The light-emitting element ELP consists of an organic electroluminescent light-emitting element or an inorganic electroluminescent light-emitting element. The drive circuit is a writing transistor TR Ｗ , and drive transistor TR Ｄ , and also, capacity section C １ It consists of the following: drive transistor TR Ｄ When current flows through the light-emitting element ELP, the ELP can emit light. Each transistor is composed of, for example, a p-channel field-effect transistor.

[0030] As shown in Figure 2, in the subpixel 100, the drive transistor TR Ｄ One of the source / drain regions is the capacitance section C １ One end and power supply line PS1 ｍ The source / drain region of the other side is electrically connected to one end of the light-emitting element ELP (specifically, the anode electrode). ＤThe gate electrode is the writing transistor TR Ｗ It is connected to the other source / drain region, and the capacitance section C １ It is electrically connected to the other end.

[0031] Furthermore, as shown in Figure 2, one source / drain region of the writing transistor TRw is connected to the signal line DTL. ｎ It is electrically connected to the writing transistor TR Ｗ The gate electrode is the scan line SCL ｍ It is electrically connected to it.

[0032] Furthermore, as shown in Figure 2, the other end of the light-emitting element ELP (specifically, the cathode electrode) is electrically connected to the common power supply line PS2. In addition, a predetermined cathode voltage V is supplied to the common power supply line PS2. ｃａｔ This is supplied. Note that in Figure 2, the capacitance of the light-emitting element ELP is denoted by code C. ＥＬ It is represented as follows.

[0033] The overview of the driving of the subpixel 100 will be explained. In the subpixel 100, the signal line DTL is transmitted from the vertical drive circuit 12. ｎ With a voltage corresponding to the brightness of the image to be displayed supplied, the writing transistor TR is activated by a scanning signal from the horizontal drive circuit 11. Ｗ When the circuit is in a conductive state, a voltage corresponding to the brightness is written to the capacitance C1. (Writing transistor TR) Ｗ After the capacitor is de-conducted, the drive transistor TR is activated according to the voltage held in the capacitance unit C1. Ｄ When an electric current flows through it, the light-emitting element ELP emits light.

[0034] In the embodiments of this disclosure, the configuration of the drive circuit that controls the light emission of the light-emitting element ELP is not limited to the configuration shown in Figure 2. Therefore, the configuration shown in Figure 2 is merely an example, and various configurations can be taken in the display device 10 according to the embodiments of this disclosure.

[0035] <<2. Background>> Next, before describing the details of the embodiments of this disclosure with reference to Figures 3 and 4, the background to how the inventors came to create the embodiments of this disclosure will be explained. Figure 3 is a cross-sectional view illustrating an example of the configuration of a pixel 20a according to a comparative example, and Figure 4 is a cross-sectional view illustrating an example of a manufacturing method for a pixel 20a according to a comparative example. Here, "comparative example" refers to the configuration and manufacturing method of a pixel 20a that the inventors had been studying before creating the embodiments of this disclosure.

[0036] In recent years, light-emitting elements such as OLEDs have come to be used not only in direct-view display devices such as monitors, but also in ultra-small display devices (microdisplays) that require a pixel pitch of several microns. In direct-view display devices using OLEDs, the light-emitting elements of subpixels 100 are formed by sequentially creating light-emitting layers that emit blue, green, and red light, that is, by painting them separately with blue, green, and red (RGB painting) using the mask deposition process described above.

[0037] The comparative example display device 10 has a plurality of pixels 20a. In the comparative example, as shown in Figure 3, for example, each pixel 20a is composed of a combination of three types of subpixels 100R, 100G, and 100B. Here, subpixel 100R has a light-emitting element 110r that emits red light, subpixel 100G has a light-emitting element 110g that emits green light, and subpixel 100B has a light-emitting element 110b that emits blue light. In the comparative example, the number and arrangement of each of the three types of subpixels 100R, 100G, and 100B included in one pixel 20a are not limited. Also, in the comparative example, as shown in Figure 3, each light-emitting element 110b, 110g, and 110r are separated from each other.

[0038] In the following explanation and reference diagrams, elements corresponding to blue wavelength components of light will be denoted with "b" or "B", elements corresponding to green wavelength components of light will be denoted with "g" or "G", and elements corresponding to red wavelength components of light will be denoted with "r" or "R".

[0039] Each light-emitting element 110 (specifically, light-emitting elements 110b, 110g, and 110r) has an anode electrode 210 (specifically, anode electrodes 210b, 210g, and 210r) provided on a substrate 200, and a light-emitting layer 220 (specifically, light-emitting layers 220b, 220g, and 220r) laminated on the anode electrode 210. Furthermore, each light-emitting element 110 has a cathode electrode 230 laminated on the light-emitting layer 220 that transmits light from the light-emitting layer 220, and a protective film 240 laminated on the cathode electrode 230 that transmits light from the light-emitting layer 220. In addition, the sides of the light-emitting elements 110 are covered by protective films 250, 252, and 254.

[0040] In the light-emitting element 110 according to this comparative example, when a predetermined voltage is supplied to the anode electrode 210 and the cathode electrode 230, the light-emitting layer 220 sandwiched between the anode electrode 210 and the cathode electrode 230 emits light. In the comparative example, light is emitted from the light-emitting layer 220 along the direction from the anode electrode 210 toward the cathode electrode 230. In other words, the display device 10 is a top-emission type light-emitting device.

[0041] Furthermore, light-emitting elements 110, each assigned to a different color of light such as red, green, and blue light, will emit light of a different color from their respective light-emitting layers 220. The pixels 20a in this comparative example are manufactured using an RGB color-coding method as shown in Figure 4.

[0042] First, as shown in the upper part of Figure 4, anode electrodes 210 (specifically, anode electrodes 210b, 210g, and 210r) are formed on the substrate 200. Next, the light-emitting layer 220b of the first light-emitting element 110b to be fabricated is laminated over the entire surface of the substrate 200, including the anode electrodes 210, for example, using a vapor deposition method. Then, the cathode electrode 230 of the first light-emitting element 110b to be fabricated is formed by depositing a film over the entire surface of the substrate 200, for example, by a sputtering method. Furthermore, a protective film 240 is deposited over the entire surface of the substrate 200, for example, by a CVD (Chemical Vapor Deposition) method. In this way, the form shown in the second part from the top of Figure 4 can be obtained.

[0043] Next, as shown in the third row from the top of Figure 4, a resist 400 is formed on the protective film 240 so as to cover the area that will become the first light-emitting element 110b to be created. Subsequently, for example, by dry etching, the protective film 240, cathode electrode 230, and light-emitting layer 220b are processed together along the pattern of the resist, and then the resist 400 is removed to obtain the form shown in the lower row of Figure 4. That is, the stacked structure of the first light-emitting element 110b to be created is fabricated up to the stage shown in the lower row of Figure 4. Furthermore, the light-emitting element 110b is fabricated by forming a protective film 250 so as to cover the sides of the stacked structure of the light-emitting element 110b.

[0044] Next, the same procedure as for the first light-emitting element 110b is repeated to sequentially fabricate the second light-emitting element 110g, and then the third light-emitting element 110r.

[0045] In the comparative example, as shown in the lower part of Figure 4, when fabricating the stacked structure of the first light-emitting element 110b, the dry etching process used to process the stacked structure sometimes damaged the surfaces of the anode electrodes 210g and 210r of the second and subsequent light-emitting elements 110g and 110r. As a result of this damage, the anode electrodes 210g and 210r of the light-emitting elements 110g and 110r became rough on the surface or their composition changed, causing them to stop emitting light unless a high voltage was applied to them. In other words, in the comparative example, the above damage resulted in the problem of requiring high voltages for the light-emitting elements 110g and 110r.

[0046] Therefore, in light of these circumstances, the inventors have created the embodiments of the present disclosure described below. According to the embodiments of the present disclosure, damage to the anode electrodes 210g and 210r of the light-emitting elements 110g and 110r can be avoided during processing of the light-emitting element 110b. The details of the embodiments of the present disclosure created by the inventors will be described in order below.

[0047] <<3. First Embodiment>> <3.1 Manufacturing Method> First, a method for manufacturing a pixel 20 (display device 10) according to the first embodiment of the present disclosure will be described with reference to Figures 5A to 5G. Figures 5A to 5G are diagrams for explaining the method for manufacturing a pixel 20 according to the present embodiment, and each step shows, in detail, a cross-section of the pixel 20 when it is cut along the film thickness direction of the substrate 200.

[0048] In this embodiment, the display device 10 has a plurality of pixels 20, similar to the comparative example. The pixels 20 are composed of a combination of three types of subpixels 100R, 100G, and 100B. Here, subpixel 100R has a light-emitting element 110r that emits red light, subpixel 100G has a light-emitting element 110g that emits green light, and subpixel 100B has a light-emitting element 110b that emits blue light. In this embodiment, the number and arrangement of the three types of light-emitting elements 110b, 110g, and 110r included in one pixel 20, as well as the color (wavelength) of the light, are not limited to the example described above.

[0049] In this embodiment as well, a mask deposition process is used to sequentially fabricate light-emitting elements (first light-emitting element, second light-emitting element, third light-emitting element) 110b, 110g, and 110r that emit red, green, and blue light and are separated from each other, by applying red, green, and blue paint (RGB painting).

[0050] First, in this embodiment, as shown in the upper part of Figure 5A, anode electrodes (first lower electrode, second lower electrode, third lower electrode) 212b, 212g, and 212r are formed on the substrate 200. Specifically, for example, a metal film, a transparent conductive film, etc., can be deposited by sputtering, and then patterned using lithography and dry etching to form multiple anode electrodes 212b, 212g, and 212r.

[0051] Next, as shown in the second row from the top of Figure 5A, a protective film 214 is laminated over the entire surface of the substrate 200, which includes the anode electrodes 212b, 212g, and 212r. This protective film 214 serves to protect the anode electrodes 212g and 212r of the light-emitting elements 110g and 110r during the processing of the light-emitting elements 110b.

[0052] Next, as shown in the third row from the top of Figure 5A, a resist 402 is formed on the protective film 214. The resist 402 has an opening 422 above the central part of the anode electrode 212b. Subsequently, as shown in the fourth row from the top of Figure 5A, an opening 216 that exposes the central part of the anode electrode 212b is formed in the protective film 214 by etching along the pattern of the resist 402.

[0053] Then, for example, a light-emitting layer (first light-emitting layer) 220b that emits blue light is laminated using a vapor deposition method. Subsequently, a transparent conductive material is deposited over the entire surface of the substrate 200 by sputtering as the cathode electrode (first upper electrode) 230 of the light-emitting element 110b. Furthermore, a protective film 240 made of a nitride film or the like is deposited over the entire surface of the substrate 200 by a method such as CVD. In this way, the form shown in the lower part of Figure 5A can be obtained.

[0054] Next, as shown in the upper part of Figure 5B, a resist 404 is formed to cover the area on the protective film 240 that will become the light-emitting element 110b. Subsequently, the protective film 240, cathode electrode 230, and light-emitting layer 220b are processed (divided) along the pattern of the resist 404 by dry etching, such as the RIE (Reactive Ion Etching) method, and the resist 404 is removed. In this way, the stacked structure of the first light-emitting element 110b is fabricated, as shown in the second row from the top of Figure 5B. In this embodiment, unlike the comparative example, even if dry etching is performed to fabricate the stacked structure of the light-emitting element 110b, the anode electrodes 212g and 212r of the light-emitting elements 110g and 110r are not damaged because they are covered by the protective film 214.

[0055] Next, as shown in the third row from the top of Figure 5B, a protective film 250 is further laminated over the entire surface of the substrate 200, which includes the laminated structure of the light-emitting element 110b and the anode electrodes 212g and 212r, using methods such as CVD or ALD (Atomic Layer Deposition). Then, for example, by dry etching, the protective films 250 laminated on the sides of the laminated structure of the light-emitting element 110b are left intact, while the other protective films 250 are removed. In this way, a light-emitting element 110b is fabricated as shown in the lower row of Figure 5B.

[0056] Next, as shown in the upper part of Figure 5C, a resist 406 is formed on the light-emitting element 110b and the protective film 214. The resist 406 has an opening 426 above the central part of the anode electrode 212g. Subsequently, as shown in the second row from the top of Figure 5C, an opening 217 is formed in the protective film 214 that exposes the central part of the anode electrode 212g by etching along the pattern of the resist 406.

[0057] Next, a light-emitting layer (second light-emitting layer) 220g that emits green light is laminated. Subsequently, the cathode electrode (second upper electrode) 230 of the light-emitting element 110g is deposited over the entire surface of the substrate 200. Furthermore, a protective film 240 is deposited over the entire surface of the substrate 200. In this way, the configuration shown in the lower part of Figure 5C can be obtained.

[0058] Next, as shown in the upper part of Figure 5D, a resist 408 is formed to cover the area on the protective film 240 that will become the light-emitting element 110g. Subsequently, the protective film 240, cathode electrode 230, and light-emitting layer 220g are processed (divided) together along the pattern of the resist 408 by dry etching, and the resist 408 is removed. In this way, a stacked structure of the second light-emitting element 110g is fabricated as shown in the second part of Figure 5D. In this embodiment, unlike the comparative example, even if dry etching is performed to fabricate the stacked structure of the light-emitting element 110g, the anode electrode 212r of the light-emitting element 110r is not damaged because it is covered by the protective film 214.

[0059] Next, as shown in the third row from the top of Figure 5D, a protective film 252 is further laminated over the entire surface of the substrate 200, which includes the stacked structure of the light-emitting elements 110b and 110g and the anode electrode 210r. Then, as shown in the bottom row of Figure 5D, the remaining protective film 252 is removed, for example, by a dry etching method, leaving the protective film 252 laminated on the sides of the stacked structure of the light-emitting elements 110b and 110g. In this way, a light-emitting element 110g is fabricated as shown in the bottom row of Figure 5B.

[0060] Next, as shown in the upper part of Figure 5E, a resist 410 is formed on the light-emitting elements 110b and 110g and the protective film 214. The resist 410 has an opening 430 above the central part of the anode electrode 212r. Subsequently, as shown in the second row from the top of Figure 5E, an opening 218 is formed in the protective film 214 that exposes the central part of the anode electrode 212r by etching along the pattern of the resist 410.

[0061] Next, using the same procedure as before, the light-emitting layer (third light-emitting layer) 220r, the cathode electrode (third upper electrode) 230, and the protective film 240 are sequentially laminated. In this way, the configuration shown in the lower part of Figure 5E can be obtained.

[0062] Furthermore, as shown in the upper part of Figure 5F, a resist 412 is formed to cover the portion of the protective film 240 that will become the light-emitting element 110r. Subsequently, the protective film 240, cathode electrode 230, and light-emitting layer 220r are processed together along the pattern of the resist 412, and the resist 412 is removed. In this way, a stacked structure of the third light-emitting element 110r is fabricated, as shown in the lower part of Figure 5F.

[0063] Then, a protective film 254 is further laminated over the entire surface of the substrate 200, which includes the laminated structure of light-emitting elements 110b, 110g, and 110r. In this way, the configuration shown in the upper part of Figure 5G can be obtained. Furthermore, for example, by a dry etching method, the remaining protective film 254 is removed, leaving the protective film 254 laminated on the sides of the light-emitting elements 110b, 110g, and 110r. In this way, a light-emitting element 110r as shown in the lower part of Figure 5G is fabricated.

[0064] Furthermore, the pixels 20 (display device 10) can be manufactured by creating wiring (not shown) and color filters, on-chip lenses, etc. (not shown).

[0065] Thus, in this embodiment, a protective film 214 is laminated on the anode electrodes 212b, 212g, and 212r to protect them. Furthermore, in this embodiment, when the light-emitting layer 220 is provided on the anode electrodes 212b, 212g, and 212r, openings 216, 217, and 218 are formed to expose the central portions of the anode electrodes 212b, 212g, and 212r. Therefore, according to this embodiment, since the anode electrodes 212g and 212r of the light-emitting elements 110g and 110r are protected by the protective film 214, damage to the anode electrodes 212g and 212r can be avoided when the laminated structure of the light-emitting elements 110b and 110g is first fabricated. As a result, according to this embodiment, since damage to the anode electrodes 212g and 212r can be avoided, the high voltage of the light-emitting elements 110g and 110r can be suppressed.

[0066] Furthermore, in this embodiment, only the steps of laminating a protective film 214 onto the anode electrodes 212b, 212g, and 212r, and forming openings 216, 217, and 218 are added, so the number of manufacturing steps for the display device 10 is not significantly increased. Therefore, this embodiment does not lead to a significant increase in the manufacturing cost and time of the display device 10.

[0067] In this embodiment, the thickness of the protective film 214 differs for each light-emitting element 110b, 110g, and 110r, or in other words, for each color of light emitted by the light-emitting element 110. Details of this will be described later.

[0068] Furthermore, the pixels 20 (display device 10) according to this embodiment can be manufactured using methods, apparatus, and conditions commonly used in the manufacture of semiconductor devices. In other words, the pixels 20 (display device 10) according to this embodiment can be manufactured using existing semiconductor device manufacturing methods.

[0069] Examples of the methods mentioned above include PVD (Physical Vapor Deposition), CVD, and ALD (Atomic Layer Deposition). PVD methods include vacuum deposition, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF (Radio Frequency)-DC (Direct Current) coupled bias sputtering, ECR (Electron Cyclotron Resonance) sputtering, opposing target sputtering, high-frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy (MBE (Molecular Beam Epitaxy)), and laser transfer. Furthermore, CVD methods include plasma CVD, thermal CVD, metal-organic (MO) CVD, and photo-CVD. Other methods include electrolytic plating, electroless plating, spin coating, immersion, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, as well as stamping, spraying, air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calender coater. Patterning methods include chemical etching such as shadow masks, laser transfer, and photolithography, as well as physical etching using ultraviolet light or lasers. In addition, planarization techniques include CMP (Chemical Mechanical Polishing), laser planarization, and reflow.

[0070] Furthermore, this embodiment is not limited to the manufacturing method shown in Figures 5A to 5G.

[0071] <3.2 Detailed Configuration> Next, the detailed configuration of the pixel 20 according to the first embodiment of the present disclosure will be described with reference to Figures 6A and 6B. Figure 6A is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to the present embodiment, and more specifically corresponds to a cross-section when the substrate 200 is cut along its film thickness direction. Figure 6B is an enlarged view of the main part (protective film 214) shown in Figure 6A.

[0072] In this embodiment as well, pixels 20 are arranged in a matrix within the display area (pixel array) of the display device 10. As shown in Figure 6A, the pixels 20 are composed of, for example, a combination of three types of subpixels 100R, 100G, and 100B. Here, subpixel 100R has a light-emitting element 110r that emits red light (for example, light with a wavelength of 580 nm to 640 nm), subpixel 100G has a light-emitting element 110g that emits green light (for example, light with a wavelength of 510 nm to 550 nm), and subpixel 100B has a light-emitting element 110b that emits blue light (for example, light with a wavelength of 450 nm to 480 nm). In this embodiment as well, the number and arrangement of the three types of subpixels 100B, 100G, and 100R (light-emitting elements 110b, 110g, and 110r) included in one pixel 20, and the color (wavelength) of the light, are not limited to the example described above.

[0073] Furthermore, in this embodiment, as shown in Figure 6A, each light-emitting element 110b, 110g, and 110r is separated from each other. Each light-emitting element 110 has an anode electrode (lower electrode) 212 (specifically, anode electrodes 212b, 212g, and 212r) provided on a substrate 200, and a light-emitting layer 220 (specifically, light-emitting layers 220b, 220g, and 220r) laminated on the anode electrode 212. In addition, each light-emitting element 110 has a cathode electrode (upper electrode) 230 laminated on the light-emitting layer 220, and a protective film (first protective film) 240 laminated on the cathode electrode 230. That is, each light-emitting element 110 has a laminated structure consisting of an anode electrode 212, a light-emitting layer 220, a cathode electrode 230, and a protective film 240. Furthermore, the sides of the stacked structure of each light-emitting element 110 are covered by sidewall films consisting of protective films 250, 252, and 254. In addition, in this embodiment, protective films (second protective films) 214 (specifically protective films 214b, 214g, and 214r) are provided to surround each anode electrode 212 and cover the outer periphery of the anode electrode 212.

[0074] The details of each component of each light-emitting element 110 will be described in order below.

[0075] The substrate 200 can be formed from a transparent material such as glass or a semiconductor material such as silicon. For example, a drive circuit for driving the light-emitting element 110 can be constructed by appropriately forming transistors, wiring, etc., within the substrate 200. An anode electrode 212, etc., which will be described later, is provided on the substrate 200. For example, a voltage can be applied to the anode electrode 212 via a via (not shown) etc. provided on the substrate 200.

[0076] In detail, the substrate 200 can be formed from a glass substrate such as high-strain point glass, soda glass, borosilicate glass, forsterite, lead glass, or quartz glass; a semiconductor substrate such as amorphous silicon or polycrystalline silicon; or a resin substrate such as polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, polyethersulfone, polyimide, polycarbonate, polyethylene terephthalate, or polyethylene naphthalate.

[0077] In this embodiment, the anode electrode 212 of each light-emitting element 110 is provided on the substrate 200 individually for each light-emitting element 110, that is, separated. When a voltage is applied between the anode electrode 212 and the cathode electrode 230, which will be described later, holes are injected from the anode electrode 212 into the light-emitting layer 220, which will be described later.

[0078] Preferably, the anode electrode 212 has not only the function of an electrode but also the function of a reflective layer. In such a case, it is preferable for the anode electrode 212 to be made of a metal film that has as high a reflectivity as possible and a large work function in order to improve the efficiency of light extraction. Therefore, in this embodiment, it is preferable that the anode electrode 212 be formed from a metal film having the above-mentioned properties. Examples of such metal films include metal films containing at least one of the elements and alloys of metals such as chromium (Cr), gold (Au), platinum (Pt), nickel (Ni), copper (Cu), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), magnesium (Mg), iron (Fe), tungsten (W), and silver (Ag). Specific examples of the above alloys include aluminum (Al) alloys such as AlNi alloy or AlCu alloy, and silver (Ag) alloys such as MgAg alloy.

[0079] Furthermore, in this embodiment, the upper surface of the anode electrode 212 of the light-emitting element 110 may be covered with a transparent conductive film. By making the surface of the anode electrode 212 that is in contact with the light-emitting layer 220 a transparent conductive film, it is possible to maintain high conductivity while increasing adhesion with the light-emitting layer 220. Furthermore, by appropriately selecting the material of the transparent conductive film, the hole injection barrier to the light-emitting layer 220 can be lowered in terms of work function, and the driving voltage of the display device 10 can be reduced.

[0080] In this embodiment, the transparent conductive film may include, for example, at least one selected from the group consisting of transparent conductive oxides containing indium (In) (hereinafter referred to as "indium-based transparent conductive oxide"), transparent conductive oxides containing tin (Sn) (hereinafter referred to as "tin-based transparent conductive oxide"), and transparent conductive oxides containing zinc (Zn) (hereinafter referred to as "zinc-based transparent conductive oxide").

[0081] Indium-based transparent conductive oxides include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), or fluorine-doped indium oxide (IFO). Tin-based transparent conductive oxides include, for example, tin oxide, antimond-doped tin oxide (ATO), or fluorine-doped tin oxide (FTO). Zinc-based transparent conductive oxides include, for example, zinc oxide, aluminum-doped zinc oxide (AZO), boron-doped zinc oxide, or gallium-doped zinc oxide (GZO).

[0082] Furthermore, in this embodiment, as shown in Figure 6A, protective films 214 (specifically, protective films 214b, 214g, and 214r) are provided so as to surround each anode electrode 212. Specifically, the protective films 214 are provided so as to cover the outer periphery of the anode electrode 212. Furthermore, in this embodiment, when viewed from above the substrate 200, the protective films 214 overlap with the outer periphery of the light-emitting layer 220, which will be described later. The protective films 214 are made of, for example, silicon oxide (SiO₂ ｘ ), silicon nitride (SiN ｘ ), or silicon oxide nitride (SiO ｘ N ｙ ) or other inorganic insulating films, or they can be formed in layers thereon.

[0083] Furthermore, in this embodiment, the thickness of the protective film 214 differs for each color of light emitted by the light-emitting element 110, depending on the etching that the pixel 20 is subjected to during the manufacturing process. Specifically, as shown in Figure 6B, the thickness t of the protective film 214 on the outer periphery of the anode electrode 210 ｂ ,t ｇ ,t ｒThis differs depending on the color of the light emitted by the light-emitting element 110. More specifically, the thickness t of the protective film 214. ｂ ,t ｇ ,t ｒ The thickness of the protective film t covering the outer periphery of the anode electrode 212b of the first light-emitting element 110b is reduced as it is exposed to etching more times during the fabrication of the stacked light-emitting elements 110b, 110g, and 110r. ｂ This refers to the film thickness t of the protective film 214g covering the outer periphery of the anode electrode 212g of the second light-emitting element 110g to be fabricated. ｇ It is thicker than the previous one. Furthermore, the thickness t of the protective film 214g covering the outer periphery of the anode electrode 212g of the second light-emitting element 110g is also thicker. ｇ This refers to the film thickness t of the protective film 214r covering the outer periphery of the anode electrode 212r of the third light-emitting element 110r to be fabricated. ｒ It is thicker compared to others.

[0084] Furthermore, as shown in Figures 6A and 6B, the protective film 214 may be provided so as to extend between the multiple light-emitting elements 110. In this case, the thickness of the protective film 214 between the multiple light-emitting elements 110 is the thickness t of the portion of the protective film 214 on the outer periphery of each anode electrode 212b, 212g, 212r. ｂ ,t ｇ ,t ｒ It can be thinner than that.

[0085] In this embodiment, the light-emitting layer 220 is formed on the anode electrode 212 and emits one of three colors of light, for example, red light (peak wavelength of, for example, 580 nm to 640 nm), green light (peak wavelength of, for example, 510 nm to 550 nm), and blue light (peak wavelength of, for example, 450 nm to 480 nm). In this embodiment, the light-emitting layer 220 may be a light-emitting layer that emits light of a color other than these. Furthermore, in the following description, the light-emitting element 110 according to this embodiment will be described as having a light-emitting layer 220 made of an organic material as a light-emitting part (i.e., the light-emitting element 110 is an OLED), but this embodiment is not limited to this. For example, in this embodiment, the light-emitting element 110 may have a light-emitting layer 220 made of an inorganic material.

[0086] Furthermore, in this embodiment, as shown in Figure 6A, the light-emitting layer 220 is provided individually for each light-emitting element 110, i.e., separated, similar to the comparative example. More specifically, the light-emitting layer 220 has a structure in which, for example, a hole injection layer, a hole transport layer, light-emitting layers of each color, and an electron transport layer are sequentially stacked from bottom to top in the figure. Here, each light-emitting layer of the same color may be a multilayer structure in which different light-emitting materials that emit light of the same color are stacked. By layering light-emitting materials with different properties and separating their functions, localized degradation within the light-emitting layer is suppressed, and a highly efficient and long-life element can be obtained.

[0087] The hole-injection layer can be composed of, for example, hexaazatriphenylene (HAT).

[0088] The hall transport layer can be composed of, for example, α-NPD[N,N'-di(1-naphthyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine].

[0089] The red light-emitting layer generates red light when an electric field is applied, as a portion of the holes injected from the anode electrode 212 via the hole injection layer and hole transport layer recombine with a portion of the electrons injected from the cathode electrode 230 via the electron transport layer. The red light-emitting layer includes, for example, at least one of a red light-emitting material, a hole transport material, an electron transport material, and a dual charge transport material. The red light-emitting material may be fluorescent or phosphorescent. Specifically, the red light-emitting layer can be composed of, for example, 4,4-bis(2,2-diphenylbinin)biphenyl (DPVBi) mixed with 30% by weight of 2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN).

[0090] The blue light-emitting layer generates blue light when an electric field is applied, as some of the injected holes and some of the injected electrons recombine. The blue light-emitting layer includes, for example, at least one of the following: a blue light-emitting material, a hole-transporting material, an electron-transporting material, and a dual-charge-transporting material. The blue light-emitting material may be fluorescent or phosphorescent. Specifically, the blue light-emitting layer can be composed of, for example, a mixture of DPVBi and 2.5% by weight of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0091] The green light-emitting layer generates green light when an electric field is applied, as some of the injected holes and some of the injected electrons recombine. The green light-emitting layer includes, for example, at least one of the following: a green light-emitting material, a hole-transporting material, an electron-transporting material, and a dual-charge-transporting material. The green light-emitting material may be fluorescent or phosphorescent. Specifically, the green light-emitting layer can be composed of, for example, a mixture of DPVBi and 5% by weight of coumarin 6.

[0092] The electron transport layer is, for example, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq ３ (Aluminum quinolinol), Bphen (basophenanthroline), etc. are used. The electron transport layer consists of at least one layer and may include an electron transport layer doped with an alkali metal or alkaline earth metal.

[0093] An electron transport layer doped with an alkali metal or alkaline earth metal can use, for example, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq as a host material. ３ The material can be composed of aluminum quinolinol, Bphen (basophenanthroline), etc., doped with alkali metals such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs), or alkaline earth metals such as magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) by co-depositing, for example, at a concentration of 0.5 to 15% by weight.

[0094] Furthermore, an electron injection layer may be provided between the electron transport layer and the cathode electrode 230. The electron injection layer is for increasing electron injection from the cathode and can be composed of an alkali metal or alkaline earth metal in its elemental form, a compound containing them, or a mixture containing them. For example, the electron injection layer can be composed of lithium (Li) or lithium fluoride (LiF), etc.

[0095] Furthermore, a buffer layer may be provided between the electron transport layer and the cathode electrode 230. The buffer layer is intended to mitigate process damage during film formation of the cathode electrode 230. The buffer layer may be made of, for example, Mg, magnesium silver alloy (MgAg), Ca, Li, LiF, lithium carbonate (Li ２ CO ３ ), Cs, Cesium carbonate (Cs ２ CO ３ It can be composed of elements of alkali metals or alkaline earth metals, compounds containing them, or mixtures containing them.

[0096] The cathode electrode 230 is provided on the light-emitting layer 220. The cathode electrode 230, like the anode electrode 212, is provided individually for each light-emitting element 110, that is, separated. When a voltage is applied between the anode electrode 212 and the cathode electrode 230, electrons are injected from the cathode electrode 230 into the light-emitting layer 220.

[0097] The cathode electrode 230 is preferably made of a transparent conductive material that has good light transmittance to visible light (for example, visible light with wavelengths of about 360 nm to 780 nm) and a small work function. For example, the cathode electrode 230 can be formed from a metal film containing at least one of the elements and alloys of metals such as aluminum (Al), magnesium (Mg), calcium (Ca), sodium (Na), and silver (Ag). Specific examples of alloys include aluminum (Al) alloys such as MgAg alloy or AlLi alloy, and silver (Ag) alloys. Furthermore, the cathode electrode 230 may be made from a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). The cathode electrode 230 may be made of a laminated film of a metal layer and a conductive oxide layer. Furthermore, if the cathode electrode 230 is made of a multilayer film, a metal layer may be provided on the light-emitting layer 220 side, or a transparent conductive oxide layer may be provided on the light-emitting layer 220 side.

[0098] The protective film 240 is provided to prevent the light-emitting layer 220 and the like from being damaged during the manufacturing process or contaminated by the external environment. The protective film 240 is preferably formed from, for example, an inorganic material or organic material that has low hygroscopicity and light transmittance to visible light. The protective film 240 may also have a single-layer or multi-layer structure. For example, as an inorganic material, silicon oxide (SiO₂) ｘ ), silicon nitride (SiN ｘ ), silicon oxide nitride (SiO ｘ N ｙ ), titanium oxide (TiO ｘ ) and aluminum oxide (AlO ｘExamples of organic materials include thermosetting resins and photosensitive resins. Photosensitive resins include, for example, ultraviolet curable resins. Specifically, examples of organic materials include acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, and parylene resins. Furthermore, the protective film 240 may be an ALD (Atomic Layer Deposition) layer to enhance the effect of suppressing moisture penetration.

[0099] As previously described, the protective films 250, 252, and 254 constitute sidewall films that cover the sides of the laminated structure of each light-emitting element 110, thereby suppressing damage to the light-emitting layer 220 and the like during the manufacturing process and contamination from the external environment. The protective films 250, 252, and 254, like the protective film 240, are preferably formed from inorganic and organic materials that have low hygroscopicity and light transmittance to visible light. Examples of inorganic materials include silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide. Examples of organic materials include thermosetting resins and photosensitive resins. Photosensitive resins include, for example, UV-curable resins. Specifically, examples of organic materials include acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, and parylene resins. Furthermore, the protective films 250, 252, and 254 may be ALD layers to enhance the effect of suppressing moisture intrusion.

[0100] More specifically, as shown in Figure 6A, the sidewall film of the light-emitting element 110b consists of three layers: a protective film (first layer) 250, a protective film (second layer) 252, and a protective film (third layer) 254. Furthermore, the sidewall film of the light-emitting element 110g consists of two layers: a protective film 252 and a protective film 254, and the sidewall film of the light-emitting element 110r consists of one layer: a protective film 254.

[0101] Furthermore, although not shown in the figures in this embodiment, the planar shape of the light-emitting element 110 (shape when viewed from above the substrate 200) may be, for example, square, rectangular (an example of a rectangular shape), hexagonal (an example of a polygonal shape), circular, or elliptical. In addition, the multiple light-emitting elements 110 may be arranged in a square arrangement (each light-emitting element 110 is placed at the vertices of a square), a striped arrangement, or a delta arrangement (each light-emitting element 110 is placed at the vertices of a triangle).

[0102] In this embodiment, as previously described, a protective film 214 is laminated on the anode electrodes 212b, 212g, and 212r to protect them. Furthermore, in this embodiment, when the light-emitting layer 220 is provided on the anode electrodes 212b, 212g, and 212r, openings 216, 217, and 218 are formed to expose the central portions of the anode electrodes 212b, 212g, and 212r. Therefore, according to this embodiment, since the anode electrodes 212g and 212r of the light-emitting elements 110g and 110r are protected by the protective film 214, damage to the anode electrodes 212g and 212r can be avoided when the laminated structure of the light-emitting elements 110b and 110g is first fabricated. As a result, according to this embodiment, since damage to the anode electrodes 212g and 212r can be avoided, the high voltage of the light-emitting elements 110g and 110r can be suppressed.

[0103] In this embodiment, the pixel 20 is not limited to the form shown in Figures 6A and 6B, but can be transformed into various forms.

[0104] <3.3 Modifications> (Modification 1) First, with reference to Figure 7A, the detailed configuration of the pixel 20 according to Modification 1 of this embodiment will be described. Figure 7A is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 1 of this embodiment, and in detail corresponds to a cross-section when the substrate 200 is cut along its film thickness direction.

[0105] In this modified example 1, as shown in Figure 7A, the protective film 240 has an opening (first opening) 242 that exposes the central part of the upper surface of the cathode electrode 230. The wiring 300 extends to cover at least a portion of the inner wall of the opening 242, and further extends to cover at least a portion of the upper and side surfaces of the protective film 240 between the light-emitting elements 110. In addition, the wiring 300 electrically connects the cathode electrodes 230 of adjacent light-emitting elements 110 by contacting the cathode electrode 230 exposed through the opening 242. The wiring 300 is also covered by the protective film 310.

[0106] The wiring 300 can be formed from, for example, a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO). Furthermore, the wiring 300 may be composed of, for example, a metal layer, or a metal layer and a transparent conductive oxide layer.

[0107] Furthermore, the wiring 300 may be covered with a protective film 310. The protective film 310 is preferably formed from, for example, an inorganic material or an organic material that has low hygroscopicity and light transmittance to visible light.

[0108] Furthermore, the protective film 310 may have a single-layer structure or a multi-layer structure. For example, inorganic materials include silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide. Organic materials include thermosetting resins and photosensitive resins. Photosensitive resins include, for example, ultraviolet curable resins. Specifically, organic materials include acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, and parylene resins. Moreover, the protective film 310 may be an ALD layer to enhance the effect of suppressing moisture penetration.

[0109] (Modification 2) Next, with reference to Figure 7B, the detailed configuration of the pixel 20 according to Modification 2 of this embodiment will be described. Figure 7B is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 2 of this embodiment, and in detail corresponds to a cross-section when the substrate 200 is cut along its film thickness direction.

[0110] In this modified example 2, as shown in Figure 7B, a planarization film 330 may be provided so as to cover each of the light-emitting elements 110b, 110g, and 110r.

[0111] The planarization film 330 can be formed from, for example, inorganic insulating materials such as silicon nitride, silicon oxide, or silicon oxynitride, or organic resin materials such as acrylic resin or polyimide resin. The planarization film 330 may also be a single layer or a multilayer film of the above-mentioned material.

[0112] (Modification 3) Next, with reference to Figure 7C, the detailed configuration of the pixel 20 according to Modification 3 of this embodiment will be described. Figure 7C is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to Modification 3 of this embodiment, and in detail corresponds to a cross-section when the substrate 200 is cut along its film thickness direction.

[0113] In this modified example 3, as shown in Figure 7C, a color filter 340 and an on-chip lens 350 may be provided on the planarization film 330.

[0114] The color filter 340 is a filter that transmits light emitted from the light-emitting layer 220 of the corresponding light-emitting element 110. For example, the color filter 340 can be a color filter 340r that transmits red light, a color filter 340g that transmits green light, or a color filter 340b that transmits blue light. The color filter 340 can be formed from a material in which a pigment or dye is dispersed in a transparent binder such as silicone.

[0115] The on-chip lens 350 can emit light from the light-emitting layer 220 as collimated light, either directly above or diagonally above the light-emitting element 110. The on-chip lens 350 can be formed from, for example, a styrene-based resin, an acrylic-based resin, a styrene-acrylic copolymer resin, or a siloxane-based resin.

[0116] In this modified example 3, instead of the on-chip lens 350, a lens structure capable of guiding light in a desired direction may be used. Examples of such lens structures include metasurfaces and waveguides. Here, a metasurface refers to a structure in which structures smaller than the wavelength of light are periodically arranged in two dimensions, and can be formed from, for example, metal or dielectric material. Furthermore, when using a metasurface, it is not limited to being provided for each light-emitting element 110 (sub-pixel 100), but may be provided so as to span multiple light-emitting elements 110.

[0117] <<4. Second Embodiment>> Next, the detailed configuration of the pixel 20 according to the second embodiment of the present disclosure will be described with reference to Figures 8 to 10. Figures 8 to 10 are cross-sectional views illustrating an example of the configuration of the pixel 20 according to this embodiment, and in detail correspond to the cross-section when the substrate 200 is cut along its film thickness direction. In the second embodiment, various forms of the protective film 214 will be described.

[0118] In this embodiment, as shown in Figure 8, the protective film 214 has an opening (second opening) that exposes the central part of the anode electrode 212 in a cross-section obtained by cutting the light-emitting element 110 along the stacking direction of the light-emitting element 110. Furthermore, in this embodiment, the light-emitting layer 220 is embedded in the opening. In this embodiment, the opening may have a tapered shape that decreases in diameter from top to bottom.

[0119] In this embodiment, the light-emitting layer 220 is deposited in an opening having a tapered shape that narrows in diameter from top to bottom, so that the deposition of the light-emitting layer 220 is less likely to be hindered by the protective film 214. Therefore, according to this embodiment, it is easy to uniformly deposit the light-emitting layer 220 inside the opening.

[0120] Furthermore, in this embodiment, as shown in Figure 9, the protective film 214 does not need to overlap the outer periphery of the light-emitting layer 220 when viewed from above the substrate 200.

[0121] Furthermore, in this embodiment, as shown in Figure 10, the protective film 214 does not need to cover the outer periphery of the anode electrode 212 when viewed from above the substrate 200. More specifically, in this embodiment, the protective film 214 is provided so as to surround the anode electrode 212.

[0122] In this embodiment, the protective film 214 only needs to cover the anode electrodes 212g and 212r while the stacked structure of the light-emitting elements 110b and 110g is being fabricated, thereby preventing damage to the anode electrodes 212g and 212r. Therefore, in the final state of the fabricated pixel 20, the protective film 214 may remain surrounding the anode electrode 212 when viewed from above the substrate 200. In other words, in this embodiment, as long as the protective film 214 surrounds the anode electrode 212, the protective film 214 does not need to cover the outer periphery of the anode electrode 212.

[0123] In this embodiment, the pixel 20 is not limited to the form shown in Figures 8 to 10, but can be transformed into various forms.

[0124] <<5. Third Embodiment>> <5.1 Manufacturing Method> Next, a method for manufacturing a pixel 20 (display device 10) according to the third embodiment of the present disclosure will be described with reference to Figures 11A to 11E. Figures 11A to 11E are diagrams for illustrating the method for manufacturing a pixel 20 according to the present embodiment, and show, in detail, a cross-section of the pixel 20 when it is cut along the film thickness direction of the substrate 200 in each step.

[0125] In this embodiment as well, a mask deposition process is used to sequentially fabricate light-emitting elements (first light-emitting element, second light-emitting element, third light-emitting element) 110b, 110g, and 110r that emit red, green, and blue light and are separated from each other, by applying red, green, and blue paint (RGB painting).

[0126] First, in this embodiment as in the first embodiment, anode electrodes (first lower electrode, second lower electrode, third lower electrode) 212b, 212g, and 212r are formed on the substrate 200. Then, a light-emitting layer 220b that emits blue light is laminated, for example, using a vapor deposition method. Next, a transparent conductive material is laminated as the cathode electrode 230 of the light-emitting element 110b by a sputtering method. Furthermore, a protective film (first protective film) 240 made of a nitride film or the like is laminated, for example, by a CVD method. Subsequently, the protective film 240, cathode electrode 230, and light-emitting layer 220b are processed (divided) together by dry etching, for example, by a RIE method, to create the laminated structure of the first light-emitting element 110b, as shown in the upper part of Figure 11A.

[0127] Next, as shown in the second row from the top of Figure 11A, a protective film 260 is laminated over the entire surface of the substrate 200, which includes the stacked structure of the light-emitting element 110b and the anode electrodes 212g and 212r, using, for example, CVD or ALD. In this embodiment, the protective film 260 serves to protect the anode electrode 212r of the light-emitting element 110r.

[0128] Next, as shown in the third row from the top of Figure 11A, a resist 440 is formed on the laminated structure of the light-emitting element 110b and on the protective film 260. The resist 440 has an opening 450 above the central part of the anode electrode 212g. Subsequently, as shown in the lower row of Figure 11A, an opening 270 is formed in the protective film 260 that exposes the central part of the anode electrode 212g by etching along the pattern of the resist 440.

[0129] Next, a light-emitting layer 220g that emits green light is laminated. Then, the cathode electrode 230 of the light-emitting element 110g is deposited over the entire surface of the substrate 200. Furthermore, a protective film 240 is deposited over the entire surface of the substrate 200. In this way, the form shown in the upper part of Figure 11B can be obtained. Next, as shown in the second part from the top of Figure 11B, a resist 442 is formed to cover the area on the protective film 240 that will become the light-emitting element 110g.

[0130] Next, dry etching is used to process (divide) the protective film 240, cathode electrode 230, and light-emitting layer 220g along the pattern of the resist 442, and then the resist 440 is removed. In this way, a stacked structure of the second light-emitting element 110g is fabricated, as shown in the lower part of Figure 11B. In this embodiment, unlike the comparative example, even when dry etching is performed to fabricate the stacked structure of the light-emitting element 110g, the anode electrode 212r of the light-emitting element 110r is not damaged because it is covered with the protective film 260.

[0131] Next, as shown in the upper part of Figure 11C, a protective film 262 is further laminated over the entire surface of the substrate 200, which includes the laminated structure of the light-emitting elements 110b and 110g and the anode electrode 212r. Next, as shown in the second row from the top of Figure 11C, a resist 444 is formed on the laminated structure of the light-emitting elements 110b and 110g and the protective film 262. The resist 444 has an opening 454 above the central part of the anode electrode 212r. Subsequently, as shown in the lower part of Figure 11C, an opening 272 that exposes the central part of the anode electrode 212r is formed in the protective films 262 and 260 by etching along the pattern of the resist 444.

[0132] Then, using the same procedure as before, the light-emitting layer 220r that emits red light, the cathode electrode 230, and the protective film 240 are sequentially stacked. In this way, the configuration shown in the upper part of Figure 11D can be obtained. Furthermore, as shown in the lower part of Figure 11D, a resist 446 is formed to cover the portion of the protective film 240 that will become the light-emitting element 110r.

[0133] Next, the protective film 240, cathode electrode 230, and light-emitting layer 220r are processed together along the pattern of the resist 446, and then the resist 446 is removed. In this way, a stacked structure of the third light-emitting element 110r is fabricated, as shown in the upper part of Figure 11E. Then, a protective film 264 is further laminated over the entire surface of the substrate 200 containing the stacked structure of light-emitting elements 110b, 110g, and 110r, for example, using a CVD method. In this way, the form shown in the lower part of Figure 11E can be obtained.

[0134] Furthermore, the pixels 20 (display device 10) can be manufactured by creating wiring (not shown), color filters, on-chip lenses, etc. (not shown).

[0135] Thus, in this embodiment, the protective film 260 covering the top and sides of the light-emitting element 110b is used as a protective film for the anode electrode 212r. Therefore, according to this embodiment, since the anode electrode 212r of the light-emitting element 110r is protected by the protective film 260, damage to the anode electrode 212r can be avoided when the laminated structure of the light-emitting element 110g is first fabricated. As a result, according to this embodiment, since damage to the anode electrode 212r can be avoided, the voltage of the light-emitting element 110r can be suppressed.

[0136] Furthermore, in this embodiment, since only the step of forming openings 270 and 272 in the protective film 260 is added, the number of manufacturing steps for the display device 10 is not significantly increased. Therefore, this embodiment does not lead to a significant increase in the manufacturing cost and manufacturing time of the display device 10.

[0137] Furthermore, the pixels 20 (display device 10) according to this embodiment can be manufactured using methods, apparatus, and conditions commonly used in the manufacture of semiconductor devices, similar to those used in the first embodiment. In other words, the pixels 20 (display device 10) according to this embodiment can be manufactured using existing semiconductor device manufacturing methods.

[0138] Furthermore, this embodiment is not limited to the manufacturing method shown in Figures 11A to 11E.

[0139] <5.2 Detailed Configuration> Next, the detailed configuration of the pixel 20 according to the third embodiment of the present disclosure will be described with reference to Figures 12A and 12B. Figure 12A is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to this embodiment, and in detail corresponds to a cross-section when the substrate 200 is cut along its film thickness direction. Figure 12B is a plan view illustrating an example of the configuration of the pixel 20 according to this embodiment, and in detail is a plan view of the protective film 260.

[0140] In this embodiment as well, pixels 20 are arranged in a matrix within the display area (pixel array portion) of the display device 10. Each pixel 20 is composed of, for example, a combination of three types of subpixels 100R, 100G, and 100B. In this embodiment as well, the number and arrangement of the three types of subpixels 100B, 100G, and 100R (light-emitting elements 110b, 110g, and 110r) included in a single pixel 20, and the color (wavelength) of the light, are not limited to the examples described above.

[0141] In this embodiment, as shown in Figure 12A, each light-emitting element 110 has an anode electrode (lower electrode) 212 (specifically, anode electrodes 212b, 212g, 212r) provided on a substrate 200, and a light-emitting layer 220 (specifically, light-emitting layers 220b, 220g, 220r) laminated on the anode electrode 212. Furthermore, each light-emitting element 110 has a cathode electrode (upper electrode) 230 laminated on the light-emitting layer 220, and a protective film (first protective film) 240 laminated on the cathode electrode 230. That is, in this embodiment, each light-emitting element 110 has a laminated structure consisting of an anode electrode 212, a light-emitting layer 220, a cathode electrode 230, and a protective film 240. Furthermore, the sides of the laminated structure of each light-emitting element 110 are covered by sidewall films consisting of protective films 260, 262, 264. In addition, in this embodiment, protective films 260 and 262 are provided so as to cover the outer periphery of the anode electrodes 212g and 212r.

[0142] In detail, in this embodiment, as shown in Figure 12A, the top and side surfaces of the light-emitting element 110b are covered with a sidewall film consisting of three layers: a protective film (first layer) 260, a protective film (second layer) 262, and a protective film (third layer) 264. Furthermore, the top and side surfaces of the light-emitting element 110g are covered with a sidewall film consisting of two layers: protective films 262 and 264, and the top and side surfaces of the light-emitting element 110r are covered with a sidewall film consisting of one layer: protective film 264.

[0143] Furthermore, in this embodiment, as shown in Figure 12A, the outer periphery of the anode electrode 212g of the light-emitting element 110g is covered with a protective film 260, and the outer periphery of the anode electrode 212r of the light-emitting element 110r is covered with protective films 260 and 262.

[0144] Furthermore, with reference to Figure 12B, the shape of the protective film 260 will be described. In this embodiment, as shown in Figure 12B, the protective film 260 covers the entire light-emitting element 110b, and in the case of light-emitting elements 110g and 110r, it covers the outer periphery of the anode electrodes 212g and 212r that are exposed from the light-emitting layers 220g and 220r. In addition, the protective film 260 is provided so as to fill the space between adjacent light-emitting elements 110g and 110r.

[0145] In this embodiment, the protective films 260, 262, and 264 are preferably formed from, for example, inorganic and organic materials that have low hygroscopicity and light transmittance to visible light. Examples of inorganic materials include silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, and aluminum oxide. Examples of organic materials include thermosetting resins and photosensitive resins. Photosensitive resins include, for example, ultraviolet curable resins. Specifically, examples of organic materials include acrylic resins, polyimide resins, novolac resins, epoxy resins, norbornene resins, and parylene resins. Furthermore, the protective films 260, 262, and 264 may be ALD layers to enhance the effect of suppressing moisture penetration.

[0146] Furthermore, although not shown in the figures, the planar shape of the light-emitting element 110 (shape when viewed from above the substrate 200) may be, for example, square, rectangular (an example of a rectangular shape), hexagonal (an example of a polygonal shape), circular, or elliptical. In addition, the multiple light-emitting elements 110 may be arranged in a square arrangement (each light-emitting element 110 is placed at the vertices of a square), a stripe arrangement, or a delta arrangement (each light-emitting element 110 is placed at the vertices of a triangle).

[0147] As described above, in this embodiment, the protective film 260 covering the top and sides of the light-emitting element 110b is used as a protective film for the anode electrode 212r. Therefore, according to this embodiment, since the anode electrode 212r of the light-emitting element 110r is protected by the protective film 260, damage to the anode electrode 212r can be avoided when the laminated structure of the light-emitting element 110g is first fabricated. As a result, according to this embodiment, since damage to the anode electrode 212r can be avoided, the voltage of the light-emitting element 110r can be suppressed.

[0148] In this embodiment, the pixel 20 is not limited to the form shown in Figures 12A and 12B, but can be transformed into various forms.

[0149] <5.3 Modified Examples> Next, with reference to Figure 13, the detailed configuration of the pixel 20 according to a modified example of this embodiment will be described. Figure 13 is a cross-sectional view illustrating an example of the configuration of the pixel 20 according to a modified example of this embodiment, and in detail corresponds to a cross-section obtained when the substrate 200 is cut along its film thickness direction.

[0150] In this modified example, as shown in Figure 13, each light-emitting element 110 has a laminated structure consisting of an anode electrode (lower electrode) 212 (specifically, anode electrodes 212b, 212g, 212r), a light-emitting layer 220 (specifically, light-emitting layers 220b, 220g, 220r), a cathode electrode (upper electrode) 230, and a protective film (first protective film) 240.

[0151] Furthermore, in this modified example, unlike the third embodiment described earlier, the top and side surfaces of the light-emitting element 110b are covered with a sidewall film consisting of one layer of protective film 260. Also, the side surface of the light-emitting element 110g is covered with a sidewall film consisting of two layers of protective films 262 and 264, and the side surface of the light-emitting element 110r is covered with a sidewall film consisting of one layer of protective film 264. In addition, in this modified example, protective film 260 is provided so as to cover the outer periphery of the anode electrodes 212g and 212r.

[0152] As described above, in this modified example, the protective film 260 covering the top and sides of the light-emitting element 110b is used as a protective film for the anode electrode 212r. Therefore, according to this modified example, since the anode electrode 212r of the light-emitting element 110r is protected by the protective film 260, damage to the anode electrode 212r can be avoided when the laminated structure of the light-emitting element 110g is first fabricated. As a result, according to this modified example, damage to the anode electrode 212r can be avoided, and the high voltage of the light-emitting element 110r can be suppressed.

[0153] Furthermore, the configuration shown in Figure 13 can be created as follows. For example, after the step of laminating a protective film 262 to cover the laminated structure of light-emitting elements 110b and 110g, as shown in the upper part of Figure 11C, a step is added to remove other protective films 262 other than the protective film 262 covering the sidewalls of the laminated structure of light-emitting elements 110g. In this case, the upper part of the protective film 240 of the laminated structure of light-emitting elements 110g will be slightly etched. In addition, after the step of laminating a protective film 264 to cover the laminated structure of light-emitting elements 110b, 110g, and 110r, as shown in the lower part of Figure 11E, a step is added to remove other protective films 264 other than the protective film 264 covering the sidewalls of the laminated structure of light-emitting elements 110g and 110r. In this case, the upper part of the protective film 240 of the laminated structure of light-emitting elements 110g and 110r will be slightly etched.

[0154] In this modified example, when removing the protective film 262 other than the protective film 262 covering the sidewall of the laminated structure of the light-emitting element 110g, the upper part of the protective film 240 of the laminated structure of the light-emitting element 110g is slightly etched. As a result, the height of the laminated structure of the light-emitting element 110g relative to the upper surface of the substrate 200 becomes lower, and when fabricating the light-emitting layer 220r on the anode electrode 212r, the deposition of the light-emitting layer 220r is less likely to be obstructed by the laminated structure of the light-emitting element 110g. Consequently, in this modified example, it becomes easier to uniformly laminate the light-emitting layer 220r.

[0155] <<6. Summary>> As described above, in each embodiment of the present disclosure, the anode electrodes 212g and 212r of the light-emitting elements 110g and 110r are protected by a protective film, so that damage to the anode electrodes 212g and 212r can be avoided when the stacked structure of the light-emitting elements 110b and 110g is first fabricated. As a result, in each embodiment of the present disclosure, damage to the anode electrodes 212g and 212r can be avoided, and the high voltage of the light-emitting elements 110g and 110r can be suppressed. In each embodiment of the present disclosure, the order in which the light-emitting elements 110b, 110g, and 110r are fabricated is not limited to the order described above and may be rearranged. Accordingly, in each embodiment of the present disclosure, the anode electrode 212 protected by the protective film is not limited to the anode electrodes 212g and 212r of the light-emitting elements 110g and 110r, but can be one or two of the anode electrodes 212b, 212g, and 212r of the light-emitting elements 110b, 110g, and 110r.

[0156] Furthermore, each embodiment of this disclosure does not significantly increase the number of manufacturing steps for the display device 10. Therefore, each embodiment of this disclosure does not lead to a significant increase in the manufacturing cost and manufacturing time of the display device 10.

[0157] Furthermore, in each embodiment of this disclosure, the positions of each light-emitting element 110b, 110g, and 110r are not limited to the above description or figures, and can be interchanged with each other.

[0158] Furthermore, each embodiment of this disclosure is not limited to the form shown in the figures, but can be modified in various ways and can also be combined with one another.

[0159] Furthermore, the display device 10 according to the embodiment of this disclosure can be applied to, for example, display devices for VR (Virtual Reality), MR (Mixed Reality), or AR (Augmented Reality), display devices for smartphones, television equipment, electronic viewfinders (EVF), or small projectors. The display device 10 can also be applied to various lighting devices (light-emitting devices).

[0160] <<7. Modifications>> <7.1 Modification 1> Next, as a modification of the embodiment of the present disclosure, a modification concerning the relationship between the normal LN passing through the center of the light-emitting part of the subpixel 100 (more specifically, the light-emitting layer 220 of a plurality of light-emitting elements 110 included in one subpixel 100), the normal LN' passing through the center of the lens member (more specifically, the on-chip lens 350), and the normal LN" passing through the center of the wavelength selection part (more specifically, the color filter 340) will be described with reference to Figures 14A to 14G. Figures 14A to 14G are conceptual diagrams for explaining the relationship between the normal LN passing through the center of the light-emitting part, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection part. In the following description, the center of the subpixel 100 will be referred to as the center of the light-emitting part.

[0161] In embodiments of this disclosure, the size of the wavelength selection area may be appropriately changed in response to the light emitted by the subpixel 100. Furthermore, if a light absorption layer (black matrix layer) is provided between the wavelength selection areas of adjacent subpixels 100, the size of the light absorption layer (black matrix layer) may be appropriately changed in response to the light emitted by the subpixel 100. In addition, the size of the wavelength selection area may be determined by the distance (offset amount) d between the normal vector passing through the center of the subpixel 100 and the normal vector passing through the center of the color filter. ０Depending on the circumstances, it may be changed as appropriate. The planar shape of the wavelength selection section may be the same as, similar to, or different from, the planar shape of the lens component (e.g., on-chip lens).

[0162] For example, as shown in Figure 14A, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength selection part, and the normal vector LN' passing through the center of the lens member may be made to coincide. In other words, the distance (offset amount) D between the normal vector passing through the center of the light-emitting part and the normal vector passing through the center of the lens member. ０ The distance (offset amount) d between the normal vector passing through the center of the light-emitting part and the normal vector passing through the center of the wavelength-selecting part. ０ This is equivalent to 0 (zero).

[0163] Furthermore, for example, as shown in Figure 14B, the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part coincide, but the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part do not have to coincide with the normal vector LN' passing through the center of the lens member. In other words, D ０ ≠d ０ It may also be 0.

[0164] Furthermore, for example, as shown in Figure 14C, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, but the normal vector LN'' passing through the center of the wavelength-selecting part and the normal vector LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ It can also be 0.

[0165] Furthermore, as shown in Figure 14D, for example, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, and the normal vector LN' passing through the center of the lens member does not coincide with the normal vector LN passing through the center of the surface of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part. Here, it is preferable that the center of the wavelength-selecting part (shown as a black circle in Figure 14D) is located on a straight line LL connecting the center of the surface of the light-emitting part and the center of the lens member (shown as a black circle in Figure 14D). Specifically, the distance from the center of the surface of the light-emitting part in the thickness direction to the center of the wavelength-selecting part is LL. １ The distance from the center of the wavelength selection area in the thickness direction to the center of the lens material is LL ２ In that case, D ０ >d ０ > 0, and considering manufacturing variations, d ０ : D ０ =LL １ : (LL １ +LL ２ It is preferable that the following conditions be met.

[0166] Furthermore, the stacking relationship between the wavelength selection unit and the lens member may be reversed. In such a case, for example, as shown in Figure 14E, the normal vector LN passing through the center of the light-emitting unit, the normal vector LN'' passing through the center of the wavelength selection unit, and the normal vector LN' passing through the center of the lens member may be made to coincide. In other words, D ０ = d ０ It may also be 0.

[0167] Furthermore, for example, as shown in Figure 14F, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, but the normal vector LN'' passing through the center of the wavelength-selecting part and the normal vector LN' passing through the center of the lens member may coincide. In other words, D ０ = d ０ It can also be 0.

[0168] Further, as shown in the conceptual diagram of FIG. 14G, the normal line LN passing through the center of the surface of the light-emitting portion, the normal line LN” passing through the center of the wavelength selection portion, and the normal line LN’ passing through the center of the lens member do not coincide, and the normal line LN’ passing through the center of the lens member may be in a form that does not coincide with the normal line LN passing through the center of the surface of the light-emitting portion and the normal line LN” passing through the center of the wavelength selection portion. Here, it is preferable that the center of the wavelength selection portion is located on the straight line LL connecting the center of the surface of the light-emitting portion and the center of the lens member. Specifically, the distance from the center of the surface of the light-emitting portion in the thickness direction to the center of the wavelength selection portion (indicated by a black circle in FIG. 14G) is LL １ , the distance from the center of the wavelength selection portion in the thickness direction to the center of the lens member (indicated by a black circle in FIG. 14G) is LL ２ . When it is set as ０ d ０ > D ０ > 0, and considering the manufacturing variations, D ０ : d ２ = LL １ : (LL ２ + LL

[0169] <7.2 Modification Example 2> The sub-pixel 1100 (specifically, the light-emitting element 110) used in the display device according to the above-described embodiment of the present disclosure can be configured to include a resonator structure that resonates the light generated in the light-emitting portion (specifically, the light-emitting layer 220). Hereinafter, the resonator structure will be described with reference to FIGS. 15 to 21. FIG. 15 is a schematic cross-sectional view for explaining the first example of the resonator structure, FIG. 16 is a schematic cross-sectional view for explaining the second example of the resonator structure, and FIG. 17 is a schematic cross-sectional view for explaining the third example of the resonator structure. Further, FIG. 18 is a schematic cross-sectional view for explaining the fourth example of the resonator structure, FIG. 19 is a schematic cross-sectional view for explaining the fifth example of the resonator structure. Furthermore, FIG. 20 is a schematic cross-sectional view for explaining the sixth example of the resonator structure, and FIG. 21 is a schematic cross-sectional view for explaining the seventh example of the resonator structure.

[0170] (Resonator Structure: First Example) Figure 15 is a schematic cross-sectional view illustrating the first example of a resonator structure. In the first example, the first electrode (e.g., anode electrode 210) 1202 is formed with a common film thickness in each subpixel 1100. The same applies to the second electrode (e.g., cathode electrode 230) 1206.

[0171] As shown in Figure 15, a reflector 1401 is positioned below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206, causing the light generated by the organic layer (specifically, the light-emitting layer 220) 1204 to resonate.

[0172] The reflector 1401 is formed with a common film thickness for each subpixel 1100. The film thickness of the optical adjustment layer 1402 differs depending on the color that the subpixel 1100 is to display. By having optical adjustment layers 1402R, 1402G, and 1402B with different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0173] In the example shown in Figure 15, the upper surfaces of the reflectors 1401 for subpixels 1100R, 1100G, and 1100B are aligned. As described above, the thickness of the optical adjustment layer 1402 differs depending on the color that the subpixel 1100 should display, so the position of the upper surface of the second electrode 1206 differs depending on the type of subpixel 1100R, 1100G, and 1100B.

[0174] The reflector 1401 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy mainly composed of these metals.

[0175] The optical adjustment layer 1402 is made of silicon nitride (SiN ｘ ), silicon oxide (SiO ｘ ), silicon oxynitride (SiO ｘ N ｙIt can be constructed using inorganic insulating materials such as ) or organic resin materials such as acrylic resins or polyimide resins. The optical adjustment layer 1402 may be a single layer or a laminated film of multiple materials. Also, the number of layers may differ depending on the type of subpixel 1100.

[0176] The first electrode 1202 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0177] The second electrode 1206 preferably functions as a semi-transparent reflective film. The second electrode 1206 can be formed using magnesium (Mg), silver (Ag), or a magnesium-silver alloy (MgAg) mainly composed of these, or an alloy containing alkali metals or alkaline earth metals.

[0178] (Resonator structure: Second example) Figure 16 is a schematic cross-sectional view illustrating a second example of the resonator structure. In this second example as well, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100.

[0179] In the second example as well, a reflector 1401 is placed beneath the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer 1204. Similar to the first example, the reflector 1401 is formed with a common film thickness for each subpixel 1100, while the film thickness of the optical adjustment layer 1402 differs according to the color that the subpixel 1100 should display.

[0180] In the first example shown in Figure 15, the upper surfaces of the reflectors 1401 for subpixels 1100R, 1100G, and 1100B were aligned, while the position of the upper surface of the second electrode 1206 differed depending on the type of subpixel 1100R, 1100G, and 1100B.

[0181] In contrast, in the second example shown in Figure 16, the upper surface of the second electrode 1206 is arranged to align with the subpixels 1100R, 1100G, and 1100B. In order to align the upper surfaces of the second electrode 1206, the upper surface of the reflector 1401 is arranged differently for the subpixels 1100R, 1100G, and 1100B, depending on the type of subpixel. As a result, the lower surface of the reflector 1401 has a stepped shape depending on the type of subpixel 1100R, 1100G, and 1100B.

[0182] The materials and other components constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0183] (Resonator structure: Third example) Figure 17 is a schematic cross-sectional view illustrating the third example of the resonator structure. In the third example as well, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100.

[0184] In the third example, the reflector 1401 is positioned below the first electrode 1202 of the subpixel 1100, with the optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer 1204. Similar to the first and second examples, the thickness of the optical adjustment layer 1402 varies depending on the color that the subpixel 1100 should display. And, similar to the second example, the upper surface of the second electrode 1206 is positioned so that it aligns with the subpixels 1100R, 1100G, and 1100B.

[0185] In the second example shown in Figure 16, the lower surface of the reflector 1401 had a stepped shape corresponding to the type of sub-pixel 1100R, 1100G, and 1100B in order to align the upper surface of the second electrode 1206.

[0186] In contrast, in the third example shown in Figure 17, the film thickness of the reflector 1401 is set to differ depending on the type of sub-pixel 1100R, 1100G, and 1100B. More specifically, the film thickness is set so that the lower surfaces of the reflectors 1401R, 1401G, and 1401B are aligned.

[0187] The materials constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0188] (Resonator structure: 4th example) Figure 18 is a schematic cross-sectional view illustrating the 4th example of a resonator structure.

[0189] In the first example shown in Figure 15, the first electrode 1202 and the second electrode 1206 of the subpixel 1100 are formed with a common film thickness. A reflector 1401 is placed below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between.

[0190] In contrast, in the fourth example shown in Figure 18, the optical adjustment layer 1402 is omitted, and the film thickness of the first electrode 1202 is set to differ depending on the type of subpixel 1100R, 1100G, and 1100B.

[0191] The reflector 1401 is formed with a common film thickness for each subpixel 1100. The film thickness of the first electrode 1202 differs depending on the color that the subpixel 1100 is to display. By having the first electrodes 1202R, 1202G, and 1202B have different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0192] The materials constituting the reflector 1401, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0193] (Resonator structure: Fifth example) Figure 19 is a schematic cross-sectional view illustrating the fifth example of a resonator structure.

[0194] In the first example shown in Figure 15, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100. A reflector 1401 is placed below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between.

[0195] In contrast, in the fifth example shown in Figure 19, the optical adjustment layer 1402 was omitted, and instead, an oxide film 1404 was formed on the surface of the reflector 1401. The thickness of the oxide film 1404 was set to differ depending on the type of subpixel 1100R, 1100G, and 1100B.

[0196] The thickness of the oxide film 1404 varies depending on the color that the subpixel 1100 is to display. By having oxide films 1404R, 1404G, and 1404B with different thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0197] The oxide film 1404 is a film obtained by oxidizing the surface of the reflector 1401, and is composed of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 1404 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 1401 and the second electrode 1206.

[0198] The oxide film 1404, which has a different thickness depending on the type of subpixel 1100R, 1100G, and 1100B, can be formed, for example, as follows.

[0199] First, the container is filled with electrolyte, and the substrate on which the reflector 1401 is formed is immersed in the electrolyte. Then, electrodes are positioned opposite the reflector 1401.

[0200] Then, a positive voltage is applied to the reflector 1401 with the electrode as the reference, and the reflector 1401 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Therefore, anodization is performed on each of the reflectors 1401R, 1401G, and 1401B with a voltage corresponding to the type of sub-pixel 1100R, 1100G, and 1100B applied. This makes it possible to form oxide films 1404 of different thicknesses all at once.

[0201] The materials constituting the reflector 1401, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0202] (Resonator Structure: Sixth Example) Figure 20 is a schematic cross-sectional view illustrating the sixth example of a resonator structure. In the sixth example, the subpixel 1100 is constructed by stacking a first electrode 1202, an organic layer 1204, and a second electrode 1206. However, in the sixth example, the first electrode 1202 is formed to serve both as an electrode and a reflector. The first electrode (and reflector) 1202 is made of a material having optical constants selected according to the type of subpixel 1100R, 1100G, and 1100B. By different phase shifts caused by the first electrode (and reflector) 1202, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0203] The first electrode (and reflector) 1202 can be made from a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or from an alloy mainly composed of these metals. For example, the first electrode (and reflector) 1202R of the subpixel 1100R can be made of copper (Cu), and the first electrode (and reflector) 1202G of the subpixel 1100G and the first electrode (and reflector) 1202B of the subpixel 1100B can be made of aluminum.

[0204] The materials and other components constituting the second electrode 1206 are the same as those described in the first example, so we will omit further explanation.

[0205] (Resonator Structure: Seventh Example) Figure 21 is a schematic cross-sectional view illustrating the seventh example of the resonator structure. The seventh example basically applies the sixth example to sub-pixels 1100R and 1100G, and the first example to sub-pixel 1100B. In this configuration as well, it is possible to set the optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0206] The first electrodes (which also serve as reflectors) 1202R and 1202G used in the sub-pixels 1100R and 1100G can be made from elemental metals such as aluminum (Al), silver (Ag), gold (Au), and copper (Cu), or alloys in which these metals are the main components.

[0207] The materials constituting the reflector 1401B, optical adjustment layer 1402B, and first electrode 1202B used in the subpixel 1100B are the same as those described in the first example, so their explanation will be omitted.

[0208] <<8. Application Examples>> For example, the technology relating to this disclosure may be applied to the display units of various electronic devices. Therefore, examples of electronic devices to which this technology can be applied will be described below.

[0209] (Specific Example 1) Figure 22A is a front view showing an example of the external appearance of the digital still camera 500, and Figure 22B is a rear view showing an example of the external appearance of the digital still camera 500. This digital still camera 500 is a single-lens reflex type with interchangeable lenses, and has an interchangeable shooting lens unit (interchangeable lens) 512 located approximately in the center of the front of the camera body 511, and a grip portion 513 for the photographer to hold on the left side of the front.

[0210] A monitor 514 is provided on the back of the camera body 511, slightly to the left of the center. An electronic viewfinder (eyepiece) 515 is provided above the monitor 514. The photographer can determine the composition by looking through the electronic viewfinder 515 and visually confirming the light image of the subject guided by the shooting lens unit 512. The display device 10 according to the embodiment of this disclosure can be used as the monitor 514 and the electronic viewfinder 515.

[0211] (Specific Example 2) Figure 23 is an external view of a head-mounted display 600. The head-mounted display 600 has, for example, an eyeglass-shaped display unit 611 and ear hooks 612 on both sides for attachment to the user's head. In this head-mounted display 600, the display device 10 according to the embodiment of this disclosure can be used as the display unit 611.

[0212] (Specific Example 3) Figure 24 is an external view of the see-through head-mounted display 634. The see-through head-mounted display 634 consists of a main body 632, an arm 633, and a lens barrel 631.

[0213] The main body 632 is connected to the arm 633 and the eyeglasses 630. Specifically, the long end of the main body 632 is connected to the arm 633, and one side of the main body 632 is connected to the eyeglasses 630 via a connecting member. The main body 632 may also be directly attached to the head of a person.

[0214] The main body 632 houses a control board for controlling the operation of the see-through head-mounted display 634 and a display unit. The arm 633 connects the main body 632 to the lens barrel 631 and supports the lens barrel 631. Specifically, the arm 633 is connected to the end of the main body 632 and the end of the lens barrel 631, respectively, and fixes the lens barrel 631 in place. The arm 633 also houses signal lines for communicating image-related data provided from the main body 632 to the lens barrel 631.

[0215] The lens barrel 631 projects image light, provided from the main body 632 via the arm 633, through the eyepiece lens towards the eyes of the user wearing the see-through head-mounted display 634. In this see-through head-mounted display 634, the display device 10 according to the embodiment of this disclosure can be used in the display section of the main body 632.

[0216] (Specific Example 4) Figure 25 shows an example of the appearance of a television device 710. This television device 710 has, for example, a video display screen section 711 including a front panel 712 and a filter glass 713, and this video display screen section 711 is configured by a display device 10 according to the embodiment of this disclosure.

[0217] (Specific Example 5) Figure 26 shows an example of the appearance of a smartphone 800. The smartphone 800 has a display unit 802 that displays various information, and an operation unit consisting of buttons, etc. that accept user input. The display unit 802 may be the display device 10 according to this embodiment.

[0218] (Specific Example 6) Figures 27A and 27B show the internal configuration of an automobile having a display device 10 according to an embodiment of this disclosure as a display device. More specifically, Figure 27A shows the interior of the automobile from the rear to the front, and Figure 27B shows the interior of the automobile from the diagonally rear to the diagonally front.

[0219] The automobile shown in Figures 27A and 27B includes a center display 911, a console display 912, a head-up display 913, a digital rear mirror 914, a steering wheel display 915, and a rear entertainment display 916. Some or all of these displays can be fitted with the display device 10 according to the embodiment of this disclosure.

[0220] The center display 911 is positioned on the center console 907, facing the driver's seat 901 and the passenger seat 902. Figures 27A and 27B show an example of a horizontally elongated center display 911 extending from the driver's seat 901 to the passenger seat 902, but the screen size and placement of the center display 911 are arbitrary. The center display 911 can display information detected by various sensors (not shown). As a specific example, the center display 911 can display images captured by an image sensor, distance images to obstacles in front of or to the side of the vehicle measured by a ToF (Time of Flight) sensor, and the body temperature of passengers detected by an infrared sensor. The center display 911 can be used to display, for example, at least one of safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information.

[0221] Safety-related information includes information such as drowsiness detection, distraction detection, detection of mischief by a passenger, seatbelt fastening status, and detection of an unattended occupant. This information is detected, for example, by a sensor (not shown) placed on top of the back of the center display 1911. Operation-related information is detected by sensing occupant gestures using sensors. The detected gestures may include the operation of various equipment in the vehicle. For example, the sensor detects the operation of air conditioning equipment, navigation systems, AV (Audio / Visual) systems, lighting systems, etc. Life logs include the life logs of all occupants. For example, life logs include records of each occupant's actions while riding in the vehicle. By acquiring and saving life logs, it is possible to confirm the state of the occupants at the time of an accident. Health-related information is detected by sensing the occupant's body temperature using a temperature sensor and inferring the occupant's health status based on the detected body temperature. Alternatively, the occupant's face may be captured using an image sensor, and the occupant's health status may be inferred from the facial expression captured. Furthermore, the system may engage in automated voice conversations with the occupants and infer their health status based on their responses. Authentication / identification-related information includes keyless entry functions that use sensors for facial recognition and functions that automatically adjust seat height and position based on facial recognition. Entertainment-related information includes functions that use sensors to detect information on how the occupants operate the AV equipment and functions that use sensors to recognize the occupants' faces and provide content suitable for the occupants through the AV equipment.

[0222] The console display 912 can be used, for example, to display life log information. The console display 912 is located near the shift lever 908 on the center console 907 between the driver's seat 901 and the passenger seat 902. The console display 912 can also display information detected by various sensors (not shown). In addition, the console display 912 may display an image of the area around the vehicle captured by an image sensor, or it may display an image showing the distance to obstacles around the vehicle.

[0223] The head-up display 913 is virtually displayed behind the windshield 904 in front of the driver's seat 901. The head-up display 913 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. Because the head-up display 913 is often virtually positioned in front of the driver's seat 901, it is suitable for displaying information directly related to the operation of the vehicle, such as the vehicle's speed and fuel (battery) level.

[0224] The digital rearview mirror 914 can not only display what is behind the vehicle, but also what is happening to the passengers in the rear seat. By placing a sensor (not shown) on top of the back of the digital rearview mirror 914, it can be used, for example, to display life log information.

[0225] The steering wheel display 915 is positioned near the center of the steering wheel 906 of the automobile. The steering wheel display 915 can be used to display at least one of the following: safety-related information, operation-related information, life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 915 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, or information related to the operation of AV equipment, air conditioning equipment, etc.

[0226] The rear entertainment display 916 is mounted on the back of the driver's seat 901 and the passenger seat 902, and is intended for viewing by rear-seat passengers. The rear entertainment display 916 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the rear entertainment display 916 is in front of the rear-seat passengers, it displays information relevant to the rear-seat passengers. For example, it may display information related to the operation of AV equipment or air conditioning equipment, or it may display the results of measurements of the rear-seat passengers' body temperature, etc., taken by a temperature sensor (not shown).

[0227] <<9. Supplementary Information>> Although preferred embodiments of the present disclosure have been described in detail above with reference to the attached drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person with ordinary skill in the art of the present disclosure may conceive of various modifications or alterations within the scope of the technical ideas described in the claims, and these will naturally also be understood to fall within the technical scope of the present disclosure.

[0228] Furthermore, the effects described herein are merely descriptive or illustrative and not limiting. In other words, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, in addition to or in lieu of the effects described herein.

[0229] Furthermore, this technology can also take the following configurations: (1) A display device comprising a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, wherein each light-emitting element has a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, a first protective film provided on the upper electrode, and a second protective film surrounding the lower electrode, wherein the thickness of the second protective film differs for each color of light emitted by the light-emitting element. (2) The display device according to (1) above, wherein the second protective film covers the outer periphery of the lower electrode. (3) The display device according to (2) above, wherein, when viewed from above the substrate, the second protective film overlaps with the outer periphery of the light-emitting layer. (4) The display device according to (3) above, wherein, in a cross-section obtained by cutting the light-emitting element along the stacking direction of the light-emitting element, the second protective film has a second opening that exposes the central part of the lower electrode, and the diameter of the second opening decreases from top to bottom. (5) The display device according to any one of (2) to (4) above, wherein the thickness of the second protective film over the outer periphery of the lower electrode differs for each color of light emitted by the light-emitting element. (6) The display device according to (5) above, wherein the second protective film is provided so as to extend between the plurality of light-emitting elements. (7) The display device according to (6) above, wherein the thickness of the second protective film between the plurality of light-emitting elements is thinner than the thickness of the second protective film over the outer periphery of the lower electrode. (8) The display device according to any one of (1) to (7) above, wherein each light-emitting element further has a sidewall film composed of one or more layers that covers the side surface of the laminated structure consisting of the lower electrode, the light-emitting layer, the upper electrode, and the first protective film. (9) The display device according to (8) above, wherein the plurality of light-emitting elements include first, second and third light-emitting elements that emit light having different wavelengths from each other, the sidewall film of the first light-emitting element consists of first, second and third layers, the sidewall film of the second light-emitting element consists of second and third layers, and the sidewall film of the third light-emitting element consists of a third layer.(10) A display device comprising a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, wherein each light-emitting element has a laminated structure consisting of a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, and a first protective film provided on the upper electrode, and a sidewall film consisting of one or more layers covering the side surface of the laminated structure, wherein the number of layers constituting the sidewall film differs for each color of light emitted by the light-emitting element, and at least one of the layers constituting the sidewall film covers the outer periphery of at least one of the plurality of lower electrodes. (11) The display device according to (10), wherein the plurality of light-emitting elements include first, second and third light-emitting elements that emit light having different wavelengths from each other, the sidewall film of the first light-emitting element consists of first, second and third layers, the sidewall film of the second light-emitting element consists of second and third layers, the sidewall film of the third light-emitting element consists of a third layer, and the first layer covers the outer periphery of the lower electrodes of the second and third light-emitting elements. (12) The display device according to (11), wherein the second layer covers the outer periphery of the lower electrode of the third light-emitting element. (13) The display device according to (12), wherein the sidewall film of the first light-emitting element covers the upper surface of the laminated structure of the first light-emitting element, the sidewall film of the second light-emitting element covers the upper surface of the laminated structure of the second light-emitting element, and the sidewall film of the third light-emitting element covers the upper surface of the laminated structure of the third light-emitting element. (14) The display device according to (11), wherein the sidewall film of the first light-emitting element covers the upper surface of the laminated structure of the first light-emitting element. (15) The display device according to any one of (1) to (14), wherein the first protective film has a first opening that exposes the central part of the upper electrode, each light-emitting element further has wiring extending from the inner wall of the first opening, and the wiring extends between the plurality of light-emitting elements to electrically connect the upper electrodes of each light-emitting element.(16) The display device according to any one of (1) to (15), wherein each of the light-emitting elements further comprises a color filter provided above the first protective film. (17) The display device according to any one of (1) to (16), wherein each of the light-emitting elements further comprises an on-chip lens provided above the first protective film. (18) An electronic device equipped with a display device, wherein the display device comprises a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, wherein each of the light-emitting elements comprises a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, a first protective film provided on the upper electrode, and a second protective film surrounding the lower electrode, wherein the thickness of the second protective film differs for each color of light emitted by the light-emitting element. (19) Electronic device equipped with a display device, wherein the display device comprises a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, each light-emitting element having a laminated structure consisting of a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, and a first protective film provided on the upper electrode, and a sidewall film consisting of one or more layers covering the side surface of the laminated structure, wherein the number of layers constituting the sidewall film differs for each color of light emitted by the light-emitting element, and at least one of the layers constituting the sidewall film covers the outer periphery of at least one of the plurality of lower electrodes.(20) A method for manufacturing a display device comprising first, second and third light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths, comprising: forming a first lower electrode, a second lower electrode and a third lower electrode on the substrate; forming a protective film on the first lower electrode, the second lower electrode and the third lower electrode; forming a first opening in the protective film that exposes the central part of the first lower electrode; sequentially stacking a first light-emitting layer and a first upper electrode on the first lower electrode to form the first light-emitting element; forming a second opening in the protective film that exposes the central part of the second lower electrode; sequentially stacking a second light-emitting layer and a second upper electrode on the second lower electrode to form the second light-emitting element; and forming a third opening in the protective film that exposes the central part of the third lower electrode. A method for manufacturing a display device, comprising sequentially stacking a third light-emitting layer and a third upper electrode on the third lower electrode to form the third light-emitting element. (21) A method for manufacturing a display device comprising first, second, and third light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths, comprising: forming a first lower electrode, a second lower electrode, and a third lower electrode on the substrate; sequentially laminating a first light-emitting layer, a first upper electrode, and a first protective film on the first lower electrode to form the first light-emitting element; forming a first sidewall film on the upper and side surfaces of the first light-emitting element, the second lower electrode, and the third lower electrode; forming a first opening in the first sidewall film that exposes the central part of the second lower electrode; sequentially laminating a second light-emitting layer, a second upper electrode, and a second protective film on the second lower electrode to form the second light-emitting element; and forming a second opening in the first sidewall film that exposes the central part of the third lower electrode. A method for manufacturing a display device, comprising sequentially stacking a third light-emitting layer, a third upper electrode, and a third protective film on the third lower electrode to form the third light-emitting element.

[0230] 10 Display device 11 Horizontal drive circuit 12 Vertical drive circuit 20, 20a Pixels 100, 100B, 100G, 100R Subpixels 110, 110b, 110g, 110r Light-emitting element 200 Substrate 210, 210b, 210g, 210r, 212, 212b, 212g, 212r Anode electrode 214, 214b, 214g, 214r, 240, 250, 252, 254, 260, 262, 264, 310 Protective film 216, 217, 218, 242, 270, 272, 422, 426, 430, 450, 454 Aperture 220, 220b, 220g, 220r Light-emitting layer 230 Cathode electrode 300 Wiring 330 Planarization film 340, 340b, 340g, 340r Color filter 350 On-chip lens 400, 402, 404, 406, 408, 410, 412, 440, 442, 444, 446 Resist

Claims

1. A display device comprising a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, wherein each light-emitting element has a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, a first protective film provided on the upper electrode, and a second protective film surrounding the lower electrode, wherein the thickness of the second protective film differs for each color of light emitted by the light-emitting element.

2. The display device according to claim 1, wherein the second protective film covers the outer periphery of the lower electrode.

3. The display device according to claim 2, wherein, when viewed from above the substrate, the second protective film is superimposed on the outer periphery of the light-emitting layer.

4. The display device according to claim 3, wherein in a cross-section obtained by cutting the light-emitting element along the stacking direction of the light-emitting element, the second protective film has a second opening that exposes the central part of the lower electrode, and the diameter of the second opening decreases from top to bottom.

5. The display device according to claim 2, wherein the thickness of the second protective film on the outer periphery of the lower electrode differs for each color of light emitted by the light-emitting element.

6. The display device according to claim 5, wherein the second protective film is provided so as to extend between the plurality of light-emitting elements.

7. The display device according to claim 6, wherein the thickness of the second protective film between the plurality of light-emitting elements is thinner than the thickness of the second protective film over the outer periphery of the lower electrode.

8. The display device according to claim 1, wherein each light-emitting element further comprises a sidewall film composed of one or more layers that covers the side surface of the laminated structure comprising the lower electrode, the light-emitting layer, the upper electrode, and the first protective film.

9. The display device according to claim 8, wherein the plurality of light-emitting elements include first, second, and third light-emitting elements that emit light having different wavelengths from each other, the sidewall film of the first light-emitting element consists of first, second, and third layers, the sidewall film of the second light-emitting element consists of second and third layers, and the sidewall film of the third light-emitting element consists of a third layer.

10. A display device comprising a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths from each other, wherein each light-emitting element has a laminated structure consisting of a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, and a first protective film provided on the upper electrode, and a sidewall film consisting of one or more layers covering the side surface of the laminated structure, wherein the number of layers constituting the sidewall film differs for each color of light emitted by the light-emitting element, and at least one of the layers constituting the sidewall film covers the outer periphery of at least one of the plurality of lower electrodes.

11. The display device according to claim 10, wherein the plurality of light-emitting elements include first, second, and third light-emitting elements that emit light having different wavelengths from each other, the sidewall film of the first light-emitting element consists of first, second, and third layers, the sidewall film of the second light-emitting element consists of second and third layers, the sidewall film of the third light-emitting element consists of a third layer, and the first layer covers the outer periphery of the lower electrodes of the second and third light-emitting elements.

12. The display device according to claim 11, wherein the second layer covers the outer periphery of the lower electrode of the third light-emitting element.

13. The display device according to claim 12, wherein the sidewall film of the first light-emitting element covers the upper surface of the laminated structure of the first light-emitting element, the sidewall film of the second light-emitting element covers the upper surface of the laminated structure of the second light-emitting element, and the sidewall film of the third light-emitting element covers the upper surface of the laminated structure of the third light-emitting element.

14. The display device according to claim 11, wherein the side wall film of the first light-emitting element covers the upper surface of the laminated structure of the first light-emitting element.

15. The display device according to claim 1, wherein the first protective film has a first opening that exposes the central portion of the upper electrode, each light-emitting element further has wiring extending along the inner wall of the first opening, and the wiring extends between the plurality of light-emitting elements to electrically connect the upper electrodes of each of the light-emitting elements.

16. The display device according to claim 1, wherein each of the light-emitting elements further comprises a color filter provided above the first protective film.

17. The display device according to claim 1, wherein each light-emitting element further comprises an on-chip lens provided above the first protective film.

18. Electronic device equipped with a display device, wherein the display device comprises a plurality of light-emitting elements arranged in a matrix on a substrate and emitting light of different wavelengths, each of the light-emitting elements having a lower electrode, a light-emitting layer provided on the lower electrode, an upper electrode provided on the light-emitting layer, a first protective film provided on the upper electrode, and a second protective film surrounding the lower electrode, wherein the thickness of the second protective film differs for each color of light emitted by the light-emitting element.

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