Pulsed DC plasma source with hollow electrode
The plasma-enhanced chemical vapor deposition system with a hollow electrode and separate biasing means addresses the challenge of uniformity and rate in PECVD, enabling efficient large-area coating and integration with surface treatments.
WO2026114616A1PCT designated stage Publication Date: 2026-06-04SMOLTEK AB
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SMOLTEK AB
- Filing Date
- 2025-11-06
- Publication Date
- 2026-06-04
AI Technical Summary
Technical Problem
Existing plasma-enhanced chemical vapor deposition (PECVD) systems face challenges in achieving uniform large-area plasma and high deposition rates, particularly in large-scale applications.
Method used
A system comprising a plasma source with a first hollow electrode, separate source and target biasing means, and a conductive platform, allowing independent control of plasma and deposition parameters, including pulsed DC bias voltage, to generate uniform plasma and optimize deposition rates.
Benefits of technology
The system achieves uniform deposition over large areas with enhanced deposition rates, supporting conductive and non-conductive substrates, and facilitates integration with additional surface treatments through a cluster tool.
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Smart Images
Figure EP2025082141_04062026_PF_FP_ABST
Abstract
A system (300) for plasma enhanced chemical vapor deposition, PECVD, comprising a plasma source (100, 200). The plasma source comprises at least a first hollow electrode (110a, 110b, 110c), the first hollow electrode (110a, 110b, 110c) being arranged to generate a hollow electrode plasma (111). The plasma source also 5 comprises a first supply means (112a, 112b, 112c) arranged to supply a plasma gas to the first hollow electrode (110a, 110b, 110c), a second supply means (141a, 141b) arranged to supply a precursor gas, a source biasing means (150) connected to the first hollow electrode (110a, 110b, 110c), and a target biasing means (130) arranged to be connectable to a conductive platform (120).
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