Optoelectronic device and the fabrication thereof

Abstract

An optoelectronic device can include a p-type contact and an optoelectronic heterostructure located on the p-type contact. The optoelectronic heterostructure can include a p-type semiconductor layer, an n-type semiconductor layer, and an active region located between the p-type semiconductor layer and the n-type semiconductor layer. An n-type contact can be located on a surface of the optoelectronic heterostructure. Additionally, three-dimensional nanostructures also can be located on the surface of the optoelectronic heterostructure. At least one of: a density, a size, or a shape of the three-dimensional nanostructures can be substantially uniform across the surface of the optoelectronic heterostructure. A method of fabricating the optoelectronic device can include forming the three-dimensional nanostructures on a surface of the heterostructure exposed by removal of a growth substrate. The optoelectronic device can be configured to operate as a deep ultraviolet light emitting device.

Images