Silica polishing particles and slurry composition for chemical-mechanical polishing comprising same
Silica abrasive particles with a targeted Si-Si-O3 peak area ratio and controlled micropores in a CMP slurry composition address the issue of scratches during polishing, enhancing polishing speed and semiconductor device quality.
WO2026121608A1 Publication Date: 2026-06-11DONGJIN SEMICHEM CO LTD
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Patent Information
- Application Number
- PCT/KR2025/018380
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-06
- Filing Date
- 2025-11-10
- Publication Date
- 2026-06-11
AI Technical Summary
Technical Problem
Conventional surface-modified silica particles used in chemical mechanical polishing (CMP) processes for semiconductor manufacturing cause scratches on the polished surface while aiming for high polishing speed and selectivity.
Method used
Silica abrasive particles with a specific Si-Si-O3 peak area ratio of 50% to 80% and controlled micropore and metal impurity content, combined with a chemical-mechanical polishing slurry composition, to enhance polishing speed and prevent surface damage.
Benefits of technology
The silica abrasive particles effectively suppress scratches and achieve high polishing speed, leading to improved semiconductor device reliability and characteristics.
✦ Generated by Eureka AI based on patent content.
Abstract
The present disclosure relates to silica polishing particles capable of suppressing the occurrence of damage to an object to be polished while exhibiting a high polishing rate, and a slurry composition for chemical-mechanical polishing comprising same.
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