Method and apparatus for rapid modeling of real-time model of power diode

Abstract

A method and an apparatus for rapid modeling of a real-time model of a power diode, relating to the technical field of power simulation. The method comprises: using a two-node model to connect a power diode, as a behavior model of the power diode to be connected, into a main circuit of a power system; a circuit form of the behavior model comprising an off circuit, and an off stage of the off circuit comprising a first off circuit stage and a second off circuit stage; in the first off circuit stage, controlling the off circuit to be in the form of a circuit with a large resistor connected in parallel to a controllable current source, and calculating an output value of the controllable current source corresponding to the first off circuit stage; when the off stage of the off circuit changes from the first off circuit stage to the second off circuit stage, a control setting the controllable current source to zero. Therefore, the requirements of behavior-level modeling and real-time simulation in the absence of semiconductor physical parameters can still be met.

Description

A rapid modeling method and apparatus for real-time models of power diodes

[0001] This application claims priority to Chinese Patent Application No. 202411820166.8, filed on December 11, 2024, entitled "Rapid Modeling Method and Apparatus for Real-Time Model of Power Diode", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the technical field of power simulation, and in particular to a rapid modeling method for a real-time power diode model, a rapid modeling device for a real-time power diode model, an electronic device, and a storage medium. Background Technology

[0003] In the early 1950s, power diodes (then called semiconductor rectifiers) began to be used. Their basic structure and working principle are consistent with diodes in information electronic circuits. Both are based on semiconductor PN junctions, achieving forward conduction and reverse cutoff. Power diodes are uncontrollable devices; their conduction and cutoff are entirely determined by the voltage and current they withstand in the main circuit. Systems using power diodes are widely used in household appliances. They are also applied in high-end industries such as rail transportation, smart grids, aerospace, marine propulsion, new energy, and electric vehicles.

[0004] The modeling of power diodes involves the interaction of multiple physical fields, including electricity, magnetism, heat, and force. Multiphysics modeling and analysis are important tools for studying their thermal management, electromagnetic compatibility, and mechanical fatigue. However, ordinary users can only obtain datasheets from the manufacturers of power diode devices. These datasheets do not provide specific material parameters, doping concentrations, or other detailed information, causing significant confusion and difficulty for users when using multiphysics modeling tools.

[0005] Traditional power diode circuit simulations primarily employ analytical models, behavioral models, and numerical models. Analytical models, based on the physical principles of the device, accurately describe its steady-state and transient operation. However, this approach is computationally intensive and difficult to implement in real-time. Behavioral models provide good predictions of device performance but neglect detailed physical characteristics. Numerical models can simulate the electrical, thermal, and optical properties of the device using the finite element method without manufacturing the physical component, but the computation is extremely time-consuming.

[0006] Generally speaking, behavioral models offer the best real-time performance among these models and require the least computational resources. Other models, on the other hand, consume significant resources and execution time. However, if behavioral models are used to model power diodes, they may fail to meet the requirements for behavioral-level modeling and real-time simulation due to the neglect of detailed physical characteristics and the lack of semiconductor physical parameters. Summary of the Invention

[0007] This invention provides a rapid modeling method for a real-time model of a power diode, a rapid modeling device for a real-time model of a power diode, an electronic device, and a storage medium, which are used to solve or partially solve the technical problem in related technologies that the requirements for behavioral-level modeling and real-time simulation cannot be met when semiconductor physical parameters are lacking.

[0008] This invention provides a rapid modeling method for real-time models of power diodes, the method comprising:

[0009] A two-node model is used to connect the power diodes, serving as the behavioral model of the power diodes, and is connected to the main circuit of the power system; the circuit configuration of the behavioral model includes a turn-off circuit, and the turn-off phase of the turn-off circuit includes a first turn-off circuit phase and a second turn-off circuit phase.

[0010] During the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor connected in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated.

[0011] When the shutdown phase of the shutdown circuit changes from the first shutdown phase to the second shutdown phase, the controllable current source is set to zero.

[0012] Optionally, calculating the controllable current source output value corresponding to the first turn-off circuit stage includes:

[0013] The maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode are obtained.

[0014] The reverse recovery time is calculated based on the maximum reverse recovery current and the total reverse recovery charge.

[0015] Based on the reverse recovery time and combined with the first stage recovery time, the second stage recovery time is calculated; the second stage recovery time is the time it takes for the power diode to move from the maximum value of the reverse recovery current to the zero-crossing point when a straight line is drawn from the point where the maximum value of the reverse recovery current is 25% of the point where the maximum value of the reverse recovery current is 25% drawn.

[0016] Based on the recovery time of the second stage and combined with the analysis of the reverse first-order process, the output value of the controllable current source corresponding to the first turn-off circuit stage is calculated.

[0017] Optionally, the step of calculating the controllable current source output value corresponding to the first turn-off circuit stage based on the second stage recovery time and in conjunction with the reverse first-order process analysis includes:

[0018] Based on the second stage recovery time, and using the first-order characteristics of reverse recovery, the first-order time constant corresponding to the first turn-off circuit stage is derived in reverse.

[0019] Based on the first-order time constant and the preset expected value of the controllable current source, the output value of the controllable current source corresponding to the first turn-off circuit stage is calculated.

[0020] Optionally, the output value of the controllable current source is calculated using the following formula:

[0021] Where W1 represents the output value of the controllable current source; W0 represents the preset desired value of the controllable current source; τ represents the first-order time constant; and S represents the bilinear transformation. t represents the sampling period; z represents the z-transform.

[0022] Optionally, after the power diode is turned off from the normal operating point, the shutdown circuit enters the first shutdown circuit stage;

[0023] The change process of the diode current corresponding to the first turn-off circuit stage is as follows:

[0024] The diode current undergoes a dynamic reversal in a linear decreasing pattern.

[0025] After the diode current passes the zero-crossing point, the reverse recovery time begins to accumulate until the maximum value of the reverse recovery current and the point at which the maximum value of the reverse recovery current is 25% are extended to the zero-crossing point.

[0026] After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decaying state of first-order current change.

[0027] Optionally, the rapid modeling method for the real-time model of the power diode further includes:

[0028] When the reverse recovery current of the power diode decays to near zero, the turn-off phase of the turn-off circuit changes from the first turn-off phase to the second turn-off phase.

[0029] Optionally, the circuit configuration of the behavioral model may also include a through-state circuit, wherein the through-state circuit adopts the circuit form of a resistor connected in parallel with a controllable current source.

[0030] The present invention also provides a rapid modeling apparatus for a real-time model of a power diode, comprising:

[0031] A behavior model construction unit is used to connect a power diode using a two-node model as the behavior model of the power diode and connect it to the main circuit of the power system; the circuit configuration of the behavior model includes a shutdown circuit, and the shutdown phase of the shutdown circuit includes a first shutdown phase and a second shutdown phase.

[0032] The first shutdown circuit stage control unit is used to control the shutdown circuit to adopt a circuit form of a large resistor connected in parallel with a controllable current source in the first shutdown circuit stage, and to calculate the output value of the controllable current source corresponding to the first shutdown circuit stage.

[0033] The second shutdown circuit stage control unit is used to control the controllable current source to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

[0034] The present invention also provides an electronic device, the device including a processor and a memory;

[0035] The memory is used to store program code and transmit the program code to the processor;

[0036] The processor is used to execute the rapid modeling method for the real-time model of the power diode as described in any of the preceding methods, according to the instructions in the program code.

[0037] The present invention also provides a computer-readable storage medium for storing program code for executing the rapid modeling method for a real-time model of a power diode as described in any of the preceding claims.

[0038] As can be seen from the above technical solutions, the present invention has the following advantages:

[0039] A rapid modeling method for real-time power diodes is provided. A two-node model is used to connect the power diodes, serving as the behavioral model of the power diodes and connected to the main circuit of the power system. The circuit configuration of the behavioral model includes a turn-off circuit, with the turn-off phase comprising a first turn-off phase and a second turn-off phase. In the first turn-off phase, the control circuit adopts a circuit configuration of a large resistor connected in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first turn-off phase is calculated. When the turn-off phase transitions from the first turn-off phase to the second turn-off phase, the controllable current source is set to zero. By employing the technical solution provided in this invention, a behavioral model of a "two-node model + power diode" is constructed. The turn-off circuit of the behavioral model is further divided into a first turn-off stage (equivalent to the behavioral model having only a controllable current source, at which point the power diode's PN junction is still in the forward conducting state) and a second turn-off stage (at which point the controllable current source is set to zero, equivalent to the behavioral model having only a large resistance; for the power diode, this creates an even higher resistance, effectively preventing most current from flowing through, and the power diode's PN junction enters reverse cutoff, completing the turn-off). This achieves real-time behavioral-level modeling of the power diode. Based on the turn-off stage transition of the behavioral model's turn-off circuit, combined with the reverse characteristics of the power diode, the control of the power diode from conduction to turn-off can be completed in a very short time, exhibiting excellent real-time performance. Furthermore, even when semiconductor physical parameters are not comprehensive, the output value of the controllable current source in the first turn-off stage can be calculated. Therefore, even with a lack of semiconductor physical parameters, the requirements for behavioral-level modeling and real-time simulation can be met. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 is a flowchart of a rapid modeling method for a real-time model of a power diode;

[0042] Figure 2 is a schematic diagram of the circuit configuration of a power diode behavior model;

[0043] Figure 3 is a schematic diagram of the change process of diode current corresponding to the first turn-off circuit stage;

[0044] Figure 4 is a schematic diagram of the overall process of a rapid modeling method for a real-time model of a power diode;

[0045] Figure 5 is a structural block diagram of a rapid modeling device for real-time models of power diodes. Detailed Implementation

[0046] This invention provides a rapid modeling method for a real-time model of a power diode, a rapid modeling device for a real-time model of a power diode, an electronic device, and a storage medium, which are used to solve or partially solve the technical problem in related technologies that the requirements for behavioral-level modeling and real-time simulation cannot be met when semiconductor physical parameters are lacking.

[0047] To make the objectives, features, and advantages of this invention more apparent and understandable, the technical solutions of the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described below are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0048] As an example, traditional power diode circuit simulations primarily employ analytical models, behavioral models, and numerical models. Analytical models, based on the physical principles of the device, establish models that accurately describe the device's steady-state and transient operation. However, this approach involves high computational costs, making real-time simulation difficult. Behavioral models provide good predictions of device performance but neglect detailed physical characteristics. Numerical models can simulate the electrical, thermal, and optical properties of the device using the finite element method without manufacturing the physical component, but the computation is extremely time-consuming.

[0049] The choice of modeling method depends on the required accuracy, computational resources, convergence properties, validity range, and computational time consumption of the simulation. Analytical and numerical models consume significant computational resources and are unsuitable for real-time simulation scenarios. Therefore, selecting the behavioral model, which offers the best real-time performance, acceptable accuracy, and low computational resource consumption, for rapid modeling and real-time simulation of power diodes is currently the feasible and recommended modeling approach. In other words, the behavioral model offers the best real-time performance among these models and uses the fewest computational resources. Other models, on the other hand, require substantial resources and execution time.

[0050] However, if behavioral models are used to model power diodes, they often fail to meet the requirements for behavioral-level modeling and real-time simulation due to the neglect of detailed physical characteristics and the lack of semiconductor physical parameters. This invention proposes that if users could directly extract characterization parameters such as gate turn-on and turn-off from power diode device datasheets and build behavioral-level models based on these parameters, most users' needs for modeling the turn-on and turn-off conditions of switching components could be met. Furthermore, accelerating the calculation of such models and embedding them into hardware-in-the-loop scenarios will significantly improve the versatility and practicality of these models.

[0051] Therefore, one of the core inventive points of this invention is to propose a rapid modeling method for a real-time model of a power diode with reverse recovery characteristics. A two-node model is used to connect the power diode, serving as the behavioral model of the power diode, and is connected to the main circuit of the power system. The circuit configuration of the behavioral model includes a turn-off circuit, and the turn-off phase of the turn-off circuit includes a first turn-off phase and a second turn-off phase. In the first turn-off phase, the controllable turn-off circuit adopts a circuit configuration of a large resistor connected in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first turn-off phase is calculated. When the turn-off phase of the turn-off circuit changes from the first turn-off phase to the second turn-off phase, the controllable current source is set to zero. Based on the technical solution provided by this invention, even in the absence of semiconductor physical parameters, the requirements for behavioral-level modeling and real-time simulation can be met, and the hardware-in-the-loop testing requirements for normal on-state and off-state power consumption can be achieved, further evaluating the safety and adequacy of the power system and its control system.

[0052] Referring to Figure 1, a flowchart of a rapid modeling method for a real-time model of a power diode provided by an embodiment of the present invention is shown, which may specifically include the following steps:

[0053] Step 101: A two-node model is used to connect the power diode as the behavior model of the power diode and connected to the main circuit of the power system; the circuit configuration of the behavior model includes a turn-off circuit, and the turn-off phase of the turn-off circuit includes a first turn-off circuit phase and a second turn-off circuit phase.

[0054] To achieve real-time simulation based on the constructed power diode model, the number of circuit nodes should be minimized. In this embodiment of the invention, a two-node model is used to connect the power diode, serving as the behavioral model of the power diode, and is connected to the main circuit of the power system, thereby greatly reducing the computational load of the main circuit.

[0055] Figure 2 shows a schematic diagram of the circuit configuration of a power diode behavior model provided in an embodiment of the present invention.

[0056] Referring to Figure 2, the circuit configuration of the power diode behavior model can be divided into on-state circuit and off-state circuit. Both circuit configurations can employ a resistor connected in parallel with a controllable current source. The off-state circuit configuration can be further divided into off-state stage ① and off-state stage ②. For ease of distinction, off-state stage ① is defined as the first off-state stage, and off-state stage ② is defined as the second off-state stage. In the first off-state stage, a large resistor connected in parallel with a controllable current source is used, which is equivalent to only connecting the controllable current source to the main circuit. In the second off-state stage, the controllable current source is set to zero, which is equivalent to only connecting the large resistor to the main circuit.

[0057] The specific resistance value of the large resistor can be set according to the actual situation. When the operating current in the circuit is small, for example, when the operating current is measured in milliamperes, a resistor with a resistance of several thousand ohms (kΩ) can be used as the large resistor. When the operating voltage or current in the circuit is large, for example, in high-voltage applications, a resistor with a higher resistance value can be used as the large resistor for sufficient insulation and safety. For example, in kilovolt-level applications, a resistor in the megaohm (MΩ) range can be used as the large resistor. It is understood that this invention does not impose any limitations on this.

[0058] Step 102: In the first shutdown circuit stage, control the shutdown circuit to adopt the circuit form of a large resistor connected in parallel with a controllable current source, and calculate the output value of the controllable current source corresponding to the first shutdown circuit stage.

[0059] Figure 3 shows a schematic diagram of the change process of diode current corresponding to the first turn-off circuit stage provided by an embodiment of the present invention.

[0060] As shown in Figure 3, after the power diode is turned off from its normal operating point, the current reverses dynamically during the first turn-off phase in a linear decreasing pattern. The slope of this decrease is directly and linearly related to the magnitude of the connected resistance. This slope can be found in the equipment datasheet. After passing the zero-crossing point, the reverse recovery time begins to accumulate until the maximum reverse recovery current is reached. A straight line drawn from the point where the maximum reverse recovery current is 25% of the maximum reverse recovery current extends back to the zero-crossing point. The maximum reverse recovery current and the total reverse recovery charge can both be found in the equipment datasheet. After reaching the maximum reverse recovery current, the diode current begins to exhibit a decaying state of first-order current change.

[0061] Therefore, it can be seen that after the power diode is turned off from the normal operating point, the turn-off circuit enters the first turn-off circuit stage. The change process of the diode current corresponding to the first turn-off circuit stage is as follows: the diode current undergoes a dynamic change of current reversal in the form of a linear decrease; when the diode current passes the zero-crossing point, it begins to accumulate the reverse recovery time until the point where the maximum value of the reverse recovery current is connected to the point where the maximum value of the reverse recovery current is 25% of the maximum value of the reverse recovery current is extended to the zero-crossing point; after reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decaying state of first-order current change.

[0062] In some embodiments, the process of calculating the output value of the controllable current source corresponding to the first turn-off circuit stage can be achieved by executing the following sub-steps S01 to S04:

[0063] Step S01: Obtain the maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode;

[0064] Based on the preceding information, the maximum value of the reverse recovery current I is... rr and the total reverse recovery charge Q rr All of these can be found in the equipment data sheet.

[0065] Simultaneously, the slope of the reverse recovery current from steady state to its maximum value can be obtained based on the magnitude of the connected resistance. Therefore, this section of the curve from steady state to the maximum value of the reverse recovery current can also be determined. Furthermore, the first-stage recovery time T1 from the zero-crossing point to the maximum value of the reverse recovery current can be derived.

[0066] Step S02: Calculate the reverse recovery time based on the maximum reverse recovery current and the total reverse recovery charge;

[0067] In the reverse recovery time T rr When the quantity is unknown, the following formula can be used for estimation:

[0068] Step S03: Based on the reverse recovery time and the first-stage recovery time, calculate the second-stage recovery time.

[0069] Based on the reverse recovery time T rr Given the first-stage recovery time T1, the second-stage recovery time T2 can be deduced using the following formula: T2 = T rr -T1;

[0070] Wherein, the second-stage recovery time T2 is the maximum value of the reverse recovery current I of the power diode. rr At the maximum value of the reverse recovery current I rr The time it takes to extend a straight line connecting 25% of the points to the zero point.

[0071] Step S04: Based on the recovery time of the second stage and combined with the analysis of the reverse first-order process, calculate the output value of the controllable current source corresponding to the first turn-off circuit stage.

[0072] The reverse recovery time T was calculated earlier. rr This is based on the assumption of the triangle area formula. The actual change curve is roughly a first-order process. Specifically, the change from 100% to the 25% observation point following a first-order decay curve can be considered a first-order process of 1.4τ. After calculating the value of τ using T2 = 1.4τ, the output value of the controllable current source can be calculated using the first-order formula.

[0073] In the specific implementation, based on the second-stage recovery time T2 and combined with the reverse first-order process analysis, the output value of the controllable current source corresponding to the first turn-off circuit stage is calculated as follows: First, based on the second-stage recovery time T2 and the first-order characteristic of reverse recovery, the first-order time constant τ corresponding to the first turn-off circuit stage is derived in reverse; then, based on the first-order time constant τ and the preset expected value W0 of the controllable current source, the output value W1 of the controllable current source corresponding to the first turn-off circuit stage is calculated.

[0074] The output value of the controllable current source can be calculated using the following formula:

[0075] In the formula, W1 represents the output value of the controllable current source; W0 represents the preset desired value of the controllable current source; τ represents the first-order time constant; and S represents the bilinear transformation. t represents the sampling period; z represents the z-transform.

[0076] It is understandable that the desired value of a controllable current source can be preset. For example, when controlling a device to turn off, it can be predicted in advance that the control current will be zero.

[0077] τ is the first-order time constant in the circuit. For example, τ = RC (resistance * capacitance), τ = L / R (inductance / resistance). More specifically, τ can be understood as the time from the start of a change in the circuit to the time when the circuit response reaches 63.2% of its maximum value in a first-order circuit change. Assuming a rising state starting from 0, if the maximum value of the reverse recovery current I is obtained according to the embodiment of this invention... rr The decay begins, and after a period of τ, it will decay to 36.8% of its original value. τ is an important parameter for the circuit response. A shorter τ means a faster circuit response, while a longer τ means a slower circuit response. In this embodiment of the invention, T2 = 1.4τ is set because... rr It takes 1.386τ time for the value to decay to 25.01% from its full value, which can be approximated as 1.4τ.

[0078] The calculation methods listed in this step can significantly reduce the computational workload of calculating the reverse recovery current of power diodes. Furthermore, they closely match actual equipment datasheets, thus simplifying the conditions for physical interpretability.

[0079] Step 103: When the shutdown phase of the shutdown circuit changes from the first shutdown phase to the second shutdown phase, the controllable current source is set to zero.

[0080] Referring to Figure 3, when the reverse recovery current of the power diode decays to near zero, the turn-off phase of the turn-off circuit changes from the first turn-off phase to the second turn-off phase, which is the high-impedance state. At this time, the control sets the controllable current source to zero, which is equivalent to connecting only a large resistor to the main circuit.

[0081] In this embodiment of the invention, a rapid modeling method for a real-time model of a power diode with reverse recovery characteristics is proposed. Based on the technical solution provided by this invention, even in the absence of semiconductor physical parameters, the requirements for behavioral-level modeling and real-time simulation can be met, and the hardware-in-the-loop testing requirements for power consumption in both on-state and off-state operation can be achieved, thereby further evaluating the safety and adequacy of the power system and its control system.

[0082] For better illustration, please refer to Figure 4, which shows a schematic diagram of the overall process of a rapid modeling method for a real-time power diode provided by an embodiment of the present invention. It should be noted that this embodiment only provides a brief description of the general process of rapid modeling of a real-time power diode. The specific implementation process of each step can be understood by referring to the relevant content in the foregoing embodiments, and will not be elaborated here. It is understood that the present invention does not impose any limitations on this.

[0083] Step 401: Connect the power diode using a two-node model as the behavior model of the power diode and connect it to the main circuit of the power system; wherein, the circuit form of the behavior model includes a conducting circuit and a turning-off circuit, and the turning-off phase of the turning-off circuit includes a first turning-off phase and a second turning-off phase.

[0084] Step 402: When the circuit configuration of the behavior model is a through circuit, the control adopts a circuit configuration of a resistor connected in parallel with a controllable current source;

[0085] Step 4031: When the circuit configuration of the behavioral model is a turn-off circuit, in the first turn-off circuit stage of the turn-off circuit, the control of the turn-off circuit adopts the circuit configuration of a large resistor connected in parallel with a controllable current source.

[0086] Step 4032: Obtain the maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode;

[0087] Step 4033: Calculate the reverse recovery time based on the maximum reverse recovery current and the total reverse recovery charge;

[0088] Step 4034: Based on the reverse recovery time and the first-stage recovery time, calculate the second-stage recovery time.

[0089] Step 4035: Based on the recovery time of the second stage and combined with the analysis of the reverse first-order process, calculate the output value of the controllable current source corresponding to the first turn-off circuit stage;

[0090] Step 4036: When the shutdown phase of the shutdown circuit changes from the first shutdown phase to the second shutdown phase, the control will set the controllable current source to zero.

[0091] Referring to Figure 5, a structural block diagram of a rapid modeling device for real-time power diodes provided in an embodiment of the present invention is shown, which may specifically include:

[0092] The behavior model construction unit 501 is used to connect the power diode using a two-node model as the behavior model of the power diode and connect it to the main circuit of the power system; the circuit configuration of the behavior model includes a shutdown circuit, and the shutdown phase of the shutdown circuit includes a first shutdown circuit phase and a second shutdown circuit phase.

[0093] The first shutdown circuit stage control unit 502 is used to control the shutdown circuit to adopt a circuit form of a large resistor connected in parallel with a controllable current source in the first shutdown circuit stage, and to calculate the output value of the controllable current source corresponding to the first shutdown circuit stage.

[0094] The second shutdown circuit stage control unit 503 is used to control the controllable current source to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

[0095] In one alternative embodiment, the first shutdown phase control unit 502 includes:

[0096] The data acquisition unit is used to acquire the maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode.

[0097] The reverse recovery time calculation unit is used to calculate the reverse recovery time based on the maximum value of the reverse recovery current and the total amount of reverse recovery charge.

[0098] The second-stage recovery time calculation unit is used to calculate the second-stage recovery time based on the reverse recovery time and in combination with the first-stage recovery time; the second-stage recovery time is the time it takes for the power diode to move from the maximum value of the reverse recovery current to the zero-crossing point when a straight line is drawn from the point where the maximum value of the reverse recovery current is 25% of the maximum value of the reverse recovery current is drawn.

[0099] The controllable current source output value calculation unit is used to calculate the controllable current source output value corresponding to the first turn-off circuit stage based on the second stage recovery time and in conjunction with the reverse first-order process analysis.

[0100] In one optional embodiment, the controllable current source output value calculation unit includes:

[0101] The first-order time constant inverse calculation unit is used to inversely deduce the first-order time constant corresponding to the first turn-off circuit stage based on the first-order characteristics of the reverse recovery, according to the second-stage recovery time.

[0102] The controllable current source output value calculation subunit is used to calculate the controllable current source output value corresponding to the first turn-off circuit stage based on the first-order time constant and the preset controllable current source expected value.

[0103] In one alternative embodiment, the output value of the controllable current source is calculated using the following formula:

[0104] Where W1 represents the output value of the controllable current source; W0 represents the preset desired value of the controllable current source; τ represents the first-order time constant; and S represents the bilinear transformation. t represents the sampling period; z represents the z-transform.

[0105] In one optional embodiment, after the power diode is turned off from its normal operating point, the turn-off circuit enters the first turn-off circuit stage; the rapid modeling device for the real-time model of the power diode further includes a diode current variation unit, which is specifically used for:

[0106] The diode current undergoes a dynamic reversal in a linear decreasing pattern.

[0107] After the diode current passes the zero-crossing point, the reverse recovery time begins to accumulate until the maximum value of the reverse recovery current and the point at which the maximum value of the reverse recovery current is 25% are extended to the zero-crossing point.

[0108] After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decaying state of first-order current change.

[0109] In one alternative embodiment, the rapid modeling apparatus for the real-time model of the power diode further includes:

[0110] The second shutdown circuit stage transition unit is used to switch the shutdown stage of the shutdown circuit from the first shutdown circuit stage to the second shutdown circuit stage when the reverse recovery current of the power diode decays to near zero.

[0111] In one alternative embodiment, the circuit configuration of the behavioral model further includes a through-state circuit, which adopts the circuit form of a resistor connected in parallel with a controllable current source.

[0112] As the device embodiment is basically similar to the method embodiment, it is described in a relatively simple way. For relevant details, please refer to the description of the method embodiment above.

[0113] It should be noted that, in order to enable those skilled in the art to better distinguish data of the same type but with different actual meanings, the embodiments of the present invention use "first" and "second" to distinguish and describe some technical features. "First" and "second" are only used to distinguish data and have no other special meaning. It is understood that the present invention does not impose any limitations on them.

[0114] This invention also provides an electronic device, which includes a processor and a memory;

[0115] The memory is used to store program code and transfer the program code to the processor;

[0116] The processor is used to execute a rapid modeling method for a real-time power diode model according to instructions in the program code, based on any embodiment of the present invention.

[0117] This invention also provides a computer-readable storage medium for storing program code for executing a rapid modeling method for a real-time power diode model according to any embodiment of this invention.

[0118] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0119] In the embodiments provided by this invention, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between devices or units through some interfaces, and may be electrical, mechanical, or other forms.

[0120] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0121] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0122] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0123] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A rapid modeling method for a real-time model of a power diode, characterized in that, include: A two-node model is used to connect the power diodes, serving as the behavioral model for the power diodes, and is connected to the main circuit of the power system. The circuit configuration of the behavioral model includes a shutdown circuit, and the shutdown phase of the shutdown circuit includes a first shutdown circuit phase and a second shutdown circuit phase. During the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor connected in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated. When the shutdown phase of the shutdown circuit changes from the first shutdown phase to the second shutdown phase, the controllable current source is set to zero.

2. The rapid modeling method for real-time power diodes according to claim 1, characterized in that, The calculation of the controllable current source output value corresponding to the first shutdown circuit stage includes: The maximum reverse recovery current, the total reverse recovery charge, and the first-stage recovery time from the zero-crossing point to the maximum reverse recovery current of the power diode are obtained. The reverse recovery time is calculated based on the maximum reverse recovery current and the total reverse recovery charge. Based on the reverse recovery time and combined with the first stage recovery time, the second stage recovery time is calculated; the second stage recovery time is the time it takes for the power diode to move from the maximum value of the reverse recovery current to the zero-crossing point when a straight line is drawn from the point where the maximum value of the reverse recovery current is 25% of the point where the maximum value of the reverse recovery current is 25% drawn. Based on the recovery time of the second stage and combined with the analysis of the reverse first-order process, the output value of the controllable current source corresponding to the first turn-off circuit stage is calculated.

3. The rapid modeling method for real-time power diodes according to claim 2, characterized in that, The step of calculating the controllable current source output value corresponding to the first turn-off circuit stage based on the second stage recovery time and in conjunction with the reverse first-order process analysis includes: Based on the second stage recovery time, and using the first-order characteristics of reverse recovery, the first-order time constant corresponding to the first turn-off circuit stage is derived in reverse. Based on the first-order time constant and the preset expected value of the controllable current source, the output value of the controllable current source corresponding to the first turn-off circuit stage is calculated.

4. The rapid modeling method for real-time power diodes according to claim 3, characterized in that, The output value of the controllable current source is calculated using the following formula: Where W1 represents the output value of the controllable current source; W0 represents the preset desired value of the controllable current source; τ represents the first-order time constant; and S represents the bilinear transformation. t represents the sampling period; z represents the z-transform.

5. The rapid modeling method for real-time power diodes according to claim 2, characterized in that, After the power diode is turned off from the normal operating point, the shutdown circuit enters the first shutdown circuit stage. The change process of the diode current corresponding to the first turn-off circuit stage is as follows: The diode current undergoes a dynamic reversal in a linear decreasing pattern. After the diode current passes the zero-crossing point, the reverse recovery time begins to accumulate until the maximum value of the reverse recovery current and the point at which the maximum value of the reverse recovery current is 25% are extended to the zero-crossing point. After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decaying state of first-order current change.

6. The rapid modeling method for real-time power diodes according to claim 5, characterized in that, Also includes: When the reverse recovery current of the power diode decays to near zero, the turn-off phase of the turn-off circuit changes from the first turn-off phase to the second turn-off phase.

7. The rapid modeling method for a real-time model of a power diode according to any one of claims 1 to 6, characterized in that, The circuit configuration of the behavioral model also includes a through-state circuit, which adopts the circuit form of a resistor connected in parallel with a controllable current source.

8. A rapid modeling device for real-time models of power diodes, characterized in that, include: A behavior model construction unit is used to connect a power diode using a two-node model as the behavior model of the power diode and connect it to the main circuit of the power system; the circuit configuration of the behavior model includes a shutdown circuit, and the shutdown phase of the shutdown circuit includes a first shutdown phase and a second shutdown phase. The first shutdown circuit stage control unit is used to control the shutdown circuit to adopt a circuit configuration of a large resistor connected in parallel with a controllable current source during the first shutdown circuit stage, and to calculate the output value of the controllable current source corresponding to the first shutdown circuit stage. The second shutdown circuit stage control unit is used to control the controllable current source to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

9. An electronic device, characterized in that, The device includes a processor and a memory; The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the rapid modeling method for the real-time model of the power diode according to any one of claims 1-7, based on the instructions in the program code.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium is used to store program code for executing the rapid modeling method for a real-time model of a power diode as described in any one of claims 1-7.

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