Electronic component and electronic device

Abstract

Embodiments of the present application relate to the technical field of electronic devices, and provide an electronic component and an electronic device. The electronic component comprises a conductive piece, an electrical connector, a metal layer, a first conductive pillar, a second conductive pillar, a seed layer, and an electroplated structure. A first end of the electroplated structure is electrically connected to the metal layer, and a second end of the electroplated structure extends from the first end to an outer surface of the electronic component. The conductive piece is electrically connected to the electroplated structure and the seed layer. The first conductive pillar is in direct contact with the seed layer, and the first conductive pillar is electrically connected to the metal layer. The second conductive pillar is in direct contact with the metal layer. The electrical connector is electrically connected to the second conductive pillar. The second conductive pillar is in direct contact with the metal layer, and there is no seed copper layer between the second conductive pillar and the metal layer, thereby avoiding contaminants caused by the presence of the seed copper layer. Therefore, the problems of delamination and voids at an interface between the seed copper layer and the second conductive pillar are fundamentally solved, thereby improving the reliability of the electronic component.

Description

Electronic devices and electronic equipment

[0001] This application claims priority to Chinese Patent Application No. 202411824469.7, filed on December 11, 2024, entitled "Electronic Devices and Electronic Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of electronic equipment technology, and in particular to an electronic device and an electronic device. Background Technology

[0003] Currently, electronic devices such as mobile phones and tablets contain filters, memory, and radio frequency devices. Taking filters as an example, the redistribution layer (RDL) process allows for flexible placement of bumps, reducing device size and achieving filter miniaturization. In related technologies, a seed copper layer is placed on one side of the redistribution layer, and copper pillars electrically connected to the bumps are grown using the seed copper layer. However, after the seed copper layer is prepared, other process steps are required. Before the copper pillars are grown, the surface of the seed copper layer is easily oxidized or contaminated with organic matter, forming contaminants. Surface treatment before copper pillar growth cannot completely remove these contaminants. These contaminants hinder the growth of copper pillars from the seed copper layer, resulting in delamination and voids at the interface between the seed copper layer and the copper pillars, thus reducing the reliability of the filter. Summary of the Invention

[0004] This application provides an electronic device and an electronic equipment, in which the second conductive post is in direct contact with the metal layer, and there is no seed copper layer between the second conductive post and the metal layer, thereby improving the reliability of the electronic device.

[0005] A first aspect of this application provides an electronic device comprising a conductive sheet, an electrical connector, a metal layer, a first conductive post, a second conductive post, a seed layer, and an electroplated structure. A first end of the electroplated structure is electrically connected to the metal layer, and a second end of the electroplated structure extends from the first end to the outer surface of the electronic device. The conductive sheet is electrically connected to the electroplated structure and the seed layer. The first conductive post is in direct contact with the seed layer and is electrically connected to the metal layer. The second conductive post is in direct contact with the metal layer. The electrical connector is electrically connected to the second conductive post.

[0006] Existing technologies grow a first conductive pillar using a first seed copper layer and a second conductive pillar using a second seed copper layer. Therefore, the surface of the second seed copper layer is easily oxidized or contaminated with organic matter, forming contaminants. Surface treatment before the formation of the second conductive pillar cannot completely remove these contaminants, which hinder the formation of the second conductive pillar. This results in delamination and voids at the interface between the second seed copper layer and the second conductive pillar. In this embodiment, the first conductive pillar is grown using a seed layer. The second conductive pillar is directly grown on the metal layer surface by connecting the second end of the electroplating structure exposed on the outer surface of the electronic device to the negative electrode of the electroplating equipment (power supply). This eliminates the need for a second seed copper layer and the process of removing contaminants from its surface. Furthermore, the second conductive pillar is in direct contact with the metal layer, meaning there is no seed copper layer between them, thus preventing contaminants from being present. Therefore, the problem of delamination and voids at the interface between the seed copper layer and the second conductive pillar is fundamentally solved, improving the reliability of the electronic device.

[0007] Furthermore, during the fabrication of electronic devices, the second end of the electroplated structure is electrically connected to the negative electrode of the electroplating equipment (or power supply) to directly grow a second conductive pillar on the surface of the metal layer. Compared to existing technologies that grow the second conductive pillar through a second seed copper layer, directly growing the second conductive pillar on the surface of the metal layer reduces the number of process steps and lowers costs.

[0008] In some possible implementations, the electroplated structure includes electroplated interconnects. The first end of each electroplated interconnect is directly connected to a conductive sheet.

[0009] In the fabrication of electronic devices, electroplated interconnects extend through dicing channels to specific locations on the wafer, typically the wafer edge, and are electrically connected to the electrodes of the electroplating equipment (or power supply) to achieve electroplating. Specifically, the electroplated interconnect is electrically connected to the negative electrode of the electroplating equipment (or power supply). Electrons flowing from the negative electrode enter the electroplated interconnect through the dicing channels, and then sequentially pass through a conductive sheet, a first conductive pillar, and a metal layer to electroplat a second conductive pillar at a corresponding location on the metal layer. Therefore, electroplating the second conductive pillar using electroplated interconnects allows for direct contact between the second conductive pillar and the metal layer, while simultaneously reducing the number of process steps and lowering costs.

[0010] In some possible implementations, the electronic device includes a thickened layer. The first end of the electroplated interconnect is integrally formed with the thickened layer. The thickened layer covers a conductive sheet.

[0011] In this implementation, the thickened layer and the electroplated interconnect are integrally formed, so the electroplated interconnect and the thickened layer are an integral structure. The thickened layer covers the conductive sheet, so the thickened layer is electrically connected to the conductive sheet and the electroplated interconnect, and plays a protective role for the conductive sheet. It can also improve the stability and consistency of the electroplating process.

[0012] In some possible implementations, the seed layer includes a first portion that serves as an electroplating structure. This first portion extends to the outer surface of the electronic device.

[0013] In the fabrication of electronic devices, the first part of the seed layer is electrically connected to the electrodes of the electroplating equipment (or power supply) to achieve electroplating. Specifically, the first part of the seed layer is electrically connected to the negative electrode of the electroplating equipment (or power supply). Electrons flowing out of the negative electrode enter the metal layer through the first part of the seed layer to electroplat a second conductive pillar at the corresponding position in the metal layer. Therefore, electroplating the second conductive pillar through the first part of the seed layer allows for direct contact between the second conductive pillar and the metal layer, reducing the number of process steps and lowering costs.

[0014] In some possible implementations, the electroplating structure further includes an electroplating line layer, which covers the surface of a first portion of the seed layer.

[0015] In this implementation, the first portion of the electroplated line layer and / or seed layer is electrically connected to the electrodes of the electroplating equipment (or power supply) to achieve electroplating. Specifically, the first portion of the electroplated line layer and / or seed layer is electrically connected to the negative electrode of the electroplating equipment (or power supply). Electrons flowing out of the negative electrode enter the metal layer through the first portion of the electroplated line layer and seed layer to electroplat a second conductive pillar at a corresponding position in the metal layer. Thus, by electroplating the second conductive pillar through the first portion of the electroplated line layer and seed layer, the second conductive pillar directly contacts the metal layer, reducing the number of processes and lowering costs. Furthermore, the electroplated line layer, metal layer, and first conductive pillar can be grown simultaneously through the seed layer, eliminating the need for an additional process to prepare the electroplated line layer, further reducing the number of processes and lowering costs. Moreover, by setting the electroplated line layer on the surface of the first portion of the seed layer, the current-carrying capacity of the electroplated structure can be increased.

[0016] In some possible implementations, the electronic device further includes a substrate, wall films, a top film, and functional units. The wall films, functional units, and conductive sheets are all connected to the same surface of the substrate. The top film is located on the side of the wall films away from the substrate. The wall films, substrate, and top film together enclose a cavity. The functional units are disposed inside the cavity and electrically connected to the conductive sheets. The conductive sheets, metal layers, first conductive pillars, second conductive pillars, and electrical connectors are all located outside the cavity. There are multiple metal layers, at least one of which is a redistribution layer.

[0017] In this implementation, the functional unit is electrically connected to the electrical connector via conductive sheets and electrical connection structures, ensuring the functional unit's connection to external devices. The functional unit is a functional structure in an electronic device used to implement a corresponding function; for example, when the electronic device is a filter, the functional unit is the functional structure used to implement the filtering function. Furthermore, by electrically connecting the first and second conductive posts through a redistribution layer, the size of the electronic device can be reduced, contributing to its miniaturization.

[0018] In some possible implementations, at least one metal layer is a thin metal film layer, each of which is located on the side of the top film away from the substrate. The orthographic projection of the cavity onto the substrate at least partially coincides with the orthographic projection of the metal film layer onto the substrate.

[0019] In this implementation, a metal thin film layer, such as a copper thin film layer, is provided on the side of the top film away from the substrate to increase molding resistance, support a larger cavity design, improve molding reliability, and prevent top film collapse.

[0020] In some possible implementations, there are multiple metal thin film layers, with any two metal thin film layers spaced apart along a direction perpendicular to the thickness direction of the metal layer. There are also multiple cavities, with each cavity corresponding to a metal thin film layer, and the orthographic projection of each cavity onto the substrate at least partially coincides with the orthographic projection of the corresponding metal thin film layer onto the substrate.

[0021] In this implementation, multiple spaced metal thin film layers are set to avoid the area of ​​a single metal thin film layer being too large, thereby reducing stress and preventing delamination.

[0022] In some possible implementations, the multiple metal layers include a first metal layer and a second metal layer. The first metal layer is a thin metal film layer. The first metal layer corresponds to multiple grounded first conductive posts, and the second metal layer corresponds to one first conductive post. The electroplated structure includes a first electroplated interconnect and a second electroplated interconnect. The width of the first electroplated interconnect is smaller than the width of the second electroplated interconnect. Each of the multiple first conductive posts corresponding to the first metal layer is electrically connected to a first electroplated interconnect, and the first conductive post corresponding to the second metal layer is electrically connected to a second electroplated interconnect.

[0023] In this implementation, the metal thin film layer is electrically connected to the grounded first conductive post, which can shield the functional unit directly below the metal thin film layer, improving shielding capability and increasing isolation performance. Furthermore, when the metal thin film layer is electrically connected to multiple grounded (GND) first conductive posts, to avoid excessive differences in height between the grounded second conductive posts and independent (e.g., transmitter TX, receiver RX, antenna ANT, etc.) second conductive posts, the first electroplated interconnect is electrically connected to the grounded first conductive post, and the second electroplated interconnect is electrically connected to the independent second conductive post. The width of the first electroplated interconnect is smaller than the width of the second electroplated interconnect, making the resistance of the first electroplated interconnect greater than that of the second electroplated interconnect. This reduces the current density at the growth location of the grounded second conductive post, ensuring that the current density at the growth location of both the grounded and independent second conductive posts is within a reasonable range, thus improving the height consistency of the second conductive posts.

[0024] In some possible implementations, the electroplating structure further includes multiple electroplating interconnects, at least one metal thin film layer corresponding to N electroplating interconnects and M grounded first conductive posts, each of the N electroplating interconnects corresponding to the metal thin film layer being electrically connected to a grounded first conductive post, where M and N are both positive integers, and M is greater than N.

[0025] In this implementation, when the metal thin film layer is electrically connected to multiple grounded (GND) first conductive pillars, to avoid excessive differences in height between the grounded second conductive pillars and independent (e.g., transmitter TX, receiver RX, antenna ANT, etc.) second conductive pillars, the number of electroplated interconnects corresponding to the metal thin film layer is less than the number of first conductive pillars corresponding to the metal thin film layer. This reduces the current density at the growth locations of the grounded second conductive pillars, ensuring that the current density at the growth locations of both the grounded and independent second conductive pillars is within a reasonable range, thereby improving the uniformity of the second conductive pillar height. Furthermore, it reduces the number of electroplated interconnects, simplifying the design of electronic devices.

[0026] In some possible implementations, there are multiple first conductive pillars and multiple second conductive pillars, with one first conductive pillar and one second conductive pillar corresponding to each other, and at least one first conductive pillar and its corresponding second conductive pillar are spaced apart along a direction perpendicular to the thickness direction of the metal layer.

[0027] In this way, by rationally designing the structure of the metal layer, the first conductive post and the second conductive post can be staggered or not staggered, allowing for flexible arrangement of the second conductive post. This enables flexible layout of the electrical connectors, thereby reducing the size of electronic devices and helping to achieve miniaturization of electronic devices.

[0028] In some possible implementations, the electronic device includes multiple metal groups arranged along the thickness direction of the substrate and multiple third conductive pillars, each metal group comprising multiple co-layered metal layers. Metal layers in adjacent metal groups are connected via third conductive pillars. Along the thickness direction of the substrate, the metal layer of the metal group closest to the substrate is electrically connected to a conductive sheet via a first conductive pillar, while the metal layer of the metal group furthest from the substrate is in direct contact with and electrically connected to a second conductive pillar.

[0029] A second aspect of this application provides an electronic device, which includes a circuit board and an electronic component as described in any of the first aspects, wherein the electronic component is electrically connected to the circuit board. Attached Figure Description

[0030] Figure 1 is an exploded schematic diagram of an electronic device provided in an embodiment of this application;

[0031] Figure 2 is a cross-sectional schematic diagram of a filter in a related technology;

[0032] Figure 3 is a cross-sectional schematic diagram of the first type of electronic device provided in Embodiment 1 of this application;

[0033] Figure 4 is a cross-sectional schematic diagram of the second type of electronic device provided in Embodiment 1 of this application;

[0034] Figure 5 is a cross-sectional schematic diagram of the fourth type of electronic device provided in Embodiment 1 of this application;

[0035] Figure 6 is a schematic diagram of the first fabrication process of the electronic device shown in Figure 3;

[0036] Figure 7 is a schematic diagram of the second fabrication process of the electronic device shown in Figure 3;

[0037] Figure 8 is a schematic diagram of the third fabrication process of the electronic device shown in Figure 3;

[0038] Figure 9 is a schematic diagram of the fourth fabrication process of the electronic device shown in Figure 3;

[0039] Figure 10 is a schematic diagram of the fifth fabrication process of the electronic device shown in Figure 3;

[0040] Figure 11 is a schematic diagram of the sixth fabrication process of the electronic device shown in Figure 3;

[0041] Figure 12 is a schematic diagram of the seventh fabrication process of the electronic device shown in Figure 3;

[0042] Figure 13 is a schematic diagram of the eighth fabrication process of the electronic device shown in Figure 3;

[0043] Figure 14 is a schematic diagram of the ninth fabrication process of the electronic device shown in Figure 3;

[0044] Figure 15 is a cross-sectional schematic diagram of an electronic device provided in Embodiment 2 of this application;

[0045] Figure 16 is a schematic diagram of an electroplated interconnect and metal thin film layer provided in Embodiment 2 of this application;

[0046] Figure 17 is a schematic diagram of another structure of the electroplated interconnect and metal thin film layer provided in Embodiment 2 of this application;

[0047] Figure 18 is a schematic diagram of the first fabrication process of the electronic device shown in Figure 15;

[0048] Figure 19 is a schematic diagram of the second fabrication process of the electronic device shown in Figure 15;

[0049] Figure 20 is a schematic diagram of the third fabrication process of the electronic device shown in Figure 15.

[0050] Explanation of reference numerals in the attached drawings: 100, electronic component; 200, display screen; 300, mid-frame; 400, back cover; 500, battery; 600, circuit board assembly; 700, circuit board; 10, conductive sheet; 20, electrical connector; 30, metal layer; 30a, first metal layer; 30b, second metal layer; 40, first conductive pillar; 50, second conductive pillar; 60, functional unit; 70, substrate; 80, wall film; 90, top film; 110, cavity; 120, thickened layer; 130, seed layer; 131, first part; 140, solder resist layer; 150, electroplated interconnect; 150a, first electroplated interconnect; 150b, second electroplated interconnect; 160, electroplated line layer; 170, photoresist layer. Detailed Implementation

[0051] The terminology used in the implementation section of this application is for the purpose of explaining specific embodiments of this application only, and is not intended to limit this application.

[0052] This application provides an electronic device that can be a consumer electronics product, a home electronics product, an in-vehicle electronics product, a financial terminal product, or a communication electronics product. Consumer electronics products include mobile phones, tablets, laptops, e-readers, personal computers (PCs), personal digital assistants (PDAs), desktop monitors, smart wearable products (e.g., smartwatches, smart bracelets), virtual reality (VR) terminal devices, augmented reality (AR) terminal devices, drones, etc. Home electronics products include smart door locks, televisions, remote controls, refrigerators, and rechargeable small household appliances (e.g., soymilk makers, robot vacuum cleaners), etc. In-vehicle electronics products include in-vehicle navigation systems, in-vehicle high-density digital video discs (DVDs), etc. Financial terminal products include automated teller machines (ATMs) and self-service terminals, etc.

[0053] For example, the following description uses a mobile phone as an example of an electronic device. As shown in Figure 1, Figure 1 is an exploded view of an electronic device provided in an embodiment of this application.

[0054] Referring to Figure 1, the electronic device may include a display screen 200, a mid-frame 300, a back cover 400, a battery 500, and a circuit board assembly 600. The back cover 400 and the display screen 200 are located on opposite sides of the mid-frame 300, forming an accommodating space with the mid-frame 300. The accommodating space houses components such as the battery 500, the circuit board assembly 600, and a camera module.

[0055] The display screen 200 can be a liquid crystal display (LCD), an organic light emitting diode (OLED) display screen, etc.

[0056] Referring to Figure 1, the circuit board assembly 600 includes a circuit board 700 and electronic devices 100. The circuit board 700 can be a printed circuit board (PCB). The circuit board 700 is used to carry and is electrically connected to the electronic devices 100. The number of electronic devices 100 can be one or more, and the specific number of electronic devices 100 is not limited here.

[0057] Electronic device 100 can be a sensor, MEMS (micro-electro-mechanical system) device, radio frequency device, microprocessor, memory, graphics processor, SOC (system on chip), power device, piezoelectric device, etc. Among them, piezoelectric devices can be surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, film bulk acoustic resonators (FBARs), laterally excited bulk acoustic resonators (XBARs), SAW delay lines, SAW convolutionals, SAW sensors, etc. The following explanation uses electronic device 100 as an example of a filter.

[0058] Figure 2 is a cross-sectional schematic diagram of a filter in the related technology.

[0059] In related technologies, referring to Figure 2, the filter includes a substrate 101, an interdigital transducer 102 (IDT), a conductive pad 103 (Pad), a thickened layer 104, a first seed layer 105, a first copper pillar 106, a second seed layer 107, a second copper pillar 108, a redistribution layer 109 (RDL layer), bumps 201, a solder mask formation (SMF) layer 202, a wall film 203, and a roof film 204. The conductive pad 103, the interdigital transducer 102, and the wall film 203 are all disposed on the same surface of the substrate 101, and the conductive pad 103 is electrically connected to the interdigital transducer 102. The wall film 203, top film 204, and substrate 101 form a cavity 205. The interdigital transducer 102 is located inside the cavity 205. The conductive sheet 103, thickened layer 104, first seed layer 105, first copper pillar 106, second seed layer 107, and second copper pillar are also present.

[0060] 108, the redistribution layer 109, the bump 201, and the solder mask layer 202 are all located outside the cavity 205. A thickened layer 104 covers the conductive sheet 103 and is located between the conductive sheet 103 and the first seed layer 105, electrically connecting the first seed layer 105 and the conductive sheet 103. The first seed layer 105 and the second seed layer 107 are made of copper, and are located on opposite sides of the redistribution layer 109. The first seed layer 105 covers the side of the redistribution layer 109 facing the substrate 101 and has a first groove. A first copper pillar 106 is located inside the first groove and electrically connected to the first seed layer 105. The second seed layer 107 forms a second groove and contacts the redistribution layer 109. A second copper pillar 108 is located inside the second groove and electrically connected to the bump 201.

[0061] In the filter fabrication process, a second copper pillar 108 is deposited by electroplating a second seed layer 107. However, after the second seed layer 107 is prepared, other process steps are required, which makes the surface of the second seed layer 107 susceptible to oxidation or organic contamination, forming contaminants. Surface treatment methods before the formation of the second copper pillar 108 cannot completely remove these contaminants. Residual contaminants can hinder the formation of the second copper pillar 108 from the second seed layer 107, resulting in delamination and voids at the interface between the second copper pillar 108 and the second seed layer 107. During filter use, there is a risk of delamination or void expansion, leading to abnormal performance and reduced filter reliability. Furthermore, electroplating the second copper pillar 108 using the seed layer method is a lengthy, complex, and costly process.

[0062] In view of this, this application provides an electronic device 100 that allows the second conductive post 50 to directly contact and be electrically connected to the metal layer 30, eliminating the second seed layer in related technologies. This avoids contaminants caused by the presence of the second seed layer, fundamentally solving the problem of delamination and voids at the interface between the second conductive post 50 and the metal layer 30, thereby improving the reliability of the electronic device 100. Simultaneously, the electronic device 100 includes an electroplating structure electrically connected to the metal layer 30. The negative electrode of the electroplating equipment is electrically connected to the electroplating structure, and electrons flowing from the negative electrode flow from the electroplating structure to the metal layer 30 to directly grow the second conductive post 50 on the surface of the metal layer 30. Compared to the prior art of growing the second conductive post 50 through a second seed layer, this reduces the process steps and lowers costs.

[0063] The structure of the electronic device 100 provided in this application embodiment will be described in detail below with reference to specific embodiments.

[0064] Implementation 1

[0065] Figure 3 is a cross-sectional schematic diagram of the first type of electronic device provided in Embodiment 1 of this application.

[0066] Referring to Figure 3, the electronic device 100 includes a conductive pad 10, an electrical connector 20, a metal layer 30, a first conductive pillar 40, a second conductive pillar 50, a substrate 70, a wall film 80, a roof film 90, a functional unit 60, a thickening layer 120, and a solder mask formation (SMF) layer 140. The electrical connector 20 can be a bump, pad, pin, or other structure. For example, in this embodiment, a bump is used as an example for the electrical connector 20.

[0067] As shown in Figure 3, the wall film 80, the functional unit 60, and the conductive sheet 10 are all connected to the same surface of the substrate 70. The top film 90 is located on the side of the wall film 80 away from the substrate 70. The wall film 80, the substrate 70, and the top film 90 together enclose the cavity 110. The functional unit 60 is disposed inside the cavity 110 and is electrically connected to the conductive sheet 10. The conductive sheet 10, the metal layer 30, the first conductive pillar 40, the second conductive pillar 50, the solder resist layer 140, the electrical connector 20, and the thickening layer 120 are all located outside the cavity 110.

[0068] As shown in Figure 3, the thickened layer 120 covers the conductive sheet 10 and is located between the first conductive post 40 and the conductive sheet 10. Both the conductive sheet 10 and the first conductive post 40 are electrically connected to the thickened layer 120. The conductive sheet 10 is electrically connected to the first conductive post 40 through the thickened layer 120. The metal layer 30 is located on the side of the top film 90 away from the substrate 70. The solder resist layer 140 covers the surface of the top film 90 away from the substrate 70 and covers a portion of the surface of the metal layer 30. The solder resist layer 140 has a through-hole that exposes a portion of the surface of the metal layer 30, and the second conductive post 50 is located within this through-hole.

[0069] As shown in Figure 3, both the first conductive post 40 and the second conductive post 50 are electrically connected to the metal layer 30. The second conductive post 50 is in direct contact with the metal layer 30. The conductive sheet 10 is electrically connected to the first conductive post 40, and the electrical connector 20 is electrically connected to the second conductive post 50. Because the second conductive post 50 is in direct contact with the metal layer 30, there is no seed copper layer between them, preventing contaminants from being present. Therefore, the problem of delamination and voids at the interface between the seed copper layer and the second conductive post 50 is fundamentally solved, improving the reliability of the electronic device 100.

[0070] To achieve the growth of the second conductive pillar 50 and direct contact between the second conductive pillar 50 and the metal layer 30, the electronic device 100 also includes an electroplating structure. A first end of the electroplating structure is electrically connected to the metal layer 30, and a second end of the electroplating structure extends from the first end to the outer surface of the electronic device 100. Therefore, the second end of the electroplating structure can be electrically connected to the negative electrode of the electroplating equipment (power supply). During the fabrication of the electronic device, the second end of the electroplating structure can receive electrons flowing from the negative electrode of the electroplating equipment (power supply). These electrons flow from the electroplating structure to the metal layer 30 to grow the second conductive pillar 50 on the surface of the metal layer 30. Compared to the prior art of growing the second conductive pillar 50 through a seed copper layer, directly growing the second conductive pillar 50 on the surface of the metal layer 30 reduces the number of process steps and lowers costs.

[0071] The electroplating structure can be understood as consisting of various devices along the path through which electrons flowing from the negative electrode of the electroplating equipment (power supply) are transferred to the metal layer 30 during the electroplating of the second conductive pillar 50.

[0072] There are multiple first conductive pillars 40 and second conductive pillars 50, and each first conductive pillar 40 and second conductive pillar 50 corresponds to another first conductive pillar 50. In one embodiment, at least one first conductive pillar 40 and its corresponding second conductive pillar 50 are spaced apart along a direction perpendicular to the thickness direction of the metal layer 30 (Z direction in Figure 3, X direction in Figure 3), that is, at least one first conductive pillar 40 and its corresponding second conductive pillar 50 are staggered. In another embodiment, each first conductive pillar 40 and its corresponding second conductive pillar 50 are not staggered, that is, the orthogonal projections of each first conductive pillar 40 and its corresponding second conductive pillar 50 on the substrate 70 overlap.

[0073] As shown in Figure 3, since the first conductive post 40 is electrically connected to the second conductive post 50 through the metal layer 30, by rationally designing the structure of the metal layer 30, the first conductive post 40 and the second conductive post 50 can be staggered or not staggered, allowing for flexible arrangement of the second conductive post 50. This, in turn, allows for flexible placement of the electrical connector 20, thereby reducing the size of the electronic device 100 and contributing to its miniaturization. Furthermore, the electrical connection between the electrical connector 20 and the second conductive post 50, and the electrical connection between the conductive sheet 10 and the first conductive post 40, decouples the area of ​​the conductive sheet 10 from that of the electrical connector 20 and the second conductive post 50. This reduces the area occupied by the conductive sheet 10, further reducing the volume of the electronic device 100.

[0074] In this embodiment, functional unit 60 is a functional structure in electronic device 100 used to implement corresponding functions. For example, when electronic device 100 is a filter, functional unit 60 is a functional structure in electronic device 100 used to implement filtering functions. Exemplarily, functional unit 60 can be an interdigital transducer (IDT). There can be multiple functional units 60; the specific number of functional units 60 is not specifically limited here.

[0075] The number of cavities 110 can be one or more, for example, there can be three cavities 110. Of course, the number of cavities 110 can also be more or less than three. When there are multiple cavities 110, each cavity 110 is provided with a functional unit 60.

[0076] The conductive pad 10 functions as an external structure of the functional unit 60. In some embodiments, the conductive pad 10 may also be called a pin, a connecting pad, etc. There are multiple conductive pads 10. Depending on the specific type of electronic device 100, the conductive pads 10 at different locations have different functions. For example, when the electronic device 100 is a filter, the multiple conductive pads 10 may include a conductive pad 10 used as ground (GND), a conductive pad 10 used as a transmitter (TX), a conductive pad 10 used as a receiver (RX), a conductive pad 10 used as an antenna (ANT), etc.

[0077] The number of conductive sheets 10, first conductive posts 40, second conductive posts 50, electrical connectors 20, and thickening layers 120 are equal. Each conductive sheet 10 is electrically connected to a conductive post through a thickening layer 120. Each first conductive post 40 is electrically connected to a second conductive post 50 through a metal layer 30. Each second conductive post 50 is electrically connected to an electrical connector 20. Therefore, the thickening layer 120, first conductive posts 40, metal layer 30, and second conductive posts 50 constitute the electrical connection structure connecting the electrical connector 20 and the conductive sheets 10, ensuring electrical connection between the electrical connector 20 and the conductive sheets 10, and meeting the connection requirements of the electronic device 100.

[0078] The first conductive post 40 is made of a conductive material. For example, if the first conductive post 40 is made of copper, then the first conductive post 40 can also be called the first copper post.

[0079] The second conductive post 50 is made of a conductive material. For example, if the second conductive post 50 is made of copper, then the second conductive post 50 can also be called the second copper post.

[0080] The metal layer 30 can be made of metals such as copper or silver. In this embodiment, copper is used as an example for illustration. Furthermore, the specific structure of the metal layer 30 is not limited in this embodiment and can be designed according to the location of the electrical connector 20.

[0081] There are multiple metal layers 30, and the solder mask layer 140 makes two adjacent electrical connectors 20 insulated, thereby insulating the two adjacent metal layers 30 and the connected first conductive post 40 and second conductive post 50.

[0082] In some embodiments, the electronic device 100 further includes a protective layer (not shown) attached to the surface of the metal layer 30 and located on the same side of the metal layer 30 as the second conductive post 50. The protective layer has a through-hole structure through which the second conductive post 50 passes, which can be a through-hole or a notch. The function of the protective layer is to protect the metal layer 30 before the second conductive post 50 is fabricated, preventing the surface of the metal layer 30 from being contaminated or oxidized by processes preceding the fabrication of the second conductive post 50. The material of the protective layer may include, but is not limited to, titanium (Ti).

[0083] In the step preceding the preparation of the second conductive pillar 50, a portion of the protective layer needs to be removed from the location corresponding to the second conductive pillar 50 to ensure that the metal layer 30 grows the second conductive pillar 50.

[0084] In some embodiments, at least one metal layer 30 is a redistribution layer; for example, each metal layer 30 is a redistribution layer. The redistribution layer can enable electrical connection between the first conductive post 40 and the second conductive post 50, allowing the first conductive post 40 and the second conductive post 50 to be staggered, and the second conductive post 50 to be flexibly arranged. This allows for flexible arrangement of the electrical connectors 20, thereby reducing the size of the electronic device 100 and contributing to the miniaturization of the electronic device 100.

[0085] Each metal layer 30 corresponds to at least one conductive sheet 10. In one embodiment, each metal layer 30 is electrically connected to a conductive sheet 10 via a first conductive post 40. In another embodiment, some metal layers 30 correspond to one conductive sheet 10, and other metal layers 30 correspond to at least two conductive sheets 10. Each conductive sheet 10 is electrically connected to its corresponding metal layer 30 via a first conductive post 40. For example, there are three metal layers 30, where two metal layers 30 are each electrically connected to a conductive sheet 10 via a first conductive post 40, and the other metal layer 30 is electrically connected to the three conductive sheets 10 via three first conductive posts 40.

[0086] When the metal layer 30 corresponds to at least two conductive pieces 10, the multiple conductive pieces 10 corresponding to the metal layer 30 are ground terminals (GND). For conductive pieces 10 that serve as transmitters (TX), receivers (RX), or antennas (ANT), they cannot be electrically connected to the same metal layer 30, and each conductive piece 10 serving as a transmitter (TX), receiver (RX), or antenna (ANT) needs to be set independently.

[0087] As shown in Figure 3, the electronic device 100 also includes a seed layer 130, which is in direct contact with the metal layer 30 and the first conductive pillar 40. The seed layer 130 is used to simultaneously grow the metal layer 30 and the first conductive pillar 40. Specifically, the electrodes of the electroplating equipment are connected to a specific location on the wafer, and this specific location is connected to the seed layer 130. Taking the connection between the electrodes of the electroplating equipment and the edge of the wafer as an example, during the fabrication of the electronic device 100, after the surface of the seed layer 130 is subjected to homogenization, exposure, development, and patterning treatment (as shown in Figure 12), the electrodes of the electroplating equipment apply a voltage to the edge of the wafer, causing electrons flowing out of the negative electrode of the electroplating equipment to enter the seed layer 130, whereby the first conductive pillar 40 and the metal layer 30 can be electroplated and deposited at the corresponding location of the seed layer 130 (as shown in Figure 13). In addition, after the first conductive post 40 and the metal layer 30 are grown, the seed layer 130 is etched to remove part of the seed layer 130 and a solder resist layer 140 is prepared. The solder resist layer 140 prevents the solder from moving along the metal layer 30 when the electrical connector 20 is prepared and constrains the contact area between the electrical connector 20 and the second conductive post 50, thus ensuring the height of the electrical connector 20.

[0088] As shown in Figure 3, the metal layer 30 and the first conductive post 40 are located on the same side of the seed layer 130, while the thickened layer 120 and the conductive sheet 10 are both located on the side of the seed layer 130 away from the first conductive post 40. The seed layer 130 covers the surface of the metal layer 30 near the conductive sheet 10 and has a groove for accommodating the first conductive post 40, with the conductive sheet 10 located outside the groove. The seed layer 130 is located between the thickened layer 120 and the first conductive post 40, and is electrically connected to the first conductive post 40, the thickened layer 120, and the metal layer 30, respectively. The first conductive post 40 is electrically connected to the thickened layer 120 through the seed layer 130. The thickened layer 120 is electrically connected to the conductive sheet 10, so that the seed layer 130 is electrically connected to the conductive sheet 10 through the thickened layer 120, and consequently, the conductive sheet 10 is electrically connected to the first conductive post 40 through the seed layer 130.

[0089] The seed layer 130 is made of a metallic material, such as copper. The seed layer 130 is conductive, enabling electrical connection between the first conductive post 40 and the conductive sheet 10. The material of the seed layer 130 is not limited here. For example, if the seed layer 130 is made of copper, it can also be called a seed copper layer.

[0090] In some embodiments, the electronic device 100 further includes an adhesion layer (not shown in the figure), which is located on the side of the seed layer 130 away from the metal layer 30. By providing the adhesion layer, the bonding force between the seed layer 130 and structures such as the wall membrane 80 and the top membrane 90 can be increased, and it can also serve as a diffusion barrier layer for the seed layer 130. The material of the adhesion layer can be titanium (Ti) or titanium-tungsten alloy (TiW), etc.

[0091] In the fabrication process of electronic device 100, an adhesion layer is sputtered first, followed by a seed layer 130.

[0092] It should be noted that in some scenarios, the adhesive layer can also be considered as part of the seed layer 130. In this case, the seed layer 130 has a two-layer structure, one layer is the adhesive layer, and the other layer is the growth layer used to grow the first conductive pillar 40 and the metal layer 30.

[0093] The embodiments of this application do not impose specific limitations on the specific structure of the electroplating structure. The specific structures of several electroplating structures are described below with reference to the accompanying drawings.

[0094] In some possible implementations, as shown in Figure 3, the electroplating structure includes electroplated interconnects 150. The electroplated interconnects 150 and the conductive sheet 10 are disposed on the same surface of the substrate 70. A first end of the electroplated interconnect 150 is integrally formed with the thickened layer 120, and a second end of the electroplated interconnect 150 extends from the first end to the outer surface of the electronic device 100. The second end of the electroplated interconnect 150 is used for electrical connection to the negative terminal of the electroplating equipment (or power supply). The integral formation of the electroplated interconnect 150 with the thickened layer 120 means that the thickened layer 120 and the electroplated interconnect 150 are a single structure that can be fabricated in a single process, helping to reduce the number of process steps.

[0095] Typically, the electroplated interconnect 150 extends through a dicing channel to a specific location on the wafer, usually the wafer edge, and is electrically connected to the negative electrode of the electroplating equipment (or power supply). During the fabrication of the electronic device, electrons flowing from the negative electrode of the electroplating equipment sequentially pass through the electroplated interconnect 150, the thickened layer 120, the seed layer 130, and the first conductive pillar 130, until they enter the metal layer 30 to grow the second conductive pillar 50 on the surface of the metal layer 30. Therefore, by electroplating the second conductive pillar 50 onto the surface of the metal layer 30 using the electroplated interconnect 150, the second seed layer in the prior art is eliminated, improving the reliability of the electronic device 100 while reducing the process flow and lowering costs. The second seed layer in the prior art can be a seed copper layer or a stacked structure consisting of an adhesion layer and a seed copper layer.

[0096] In some scenarios, during the electroplating of the first conductive pillar 40, applying voltage to the seed layer 130 and the electroplating interconnect 150 simultaneously can improve the consistency of current density at the growth locations of each first conductive pillar 40, thus contributing to improved height consistency of the first conductive pillar 40. The reason for improving the height consistency of the first conductive pillar 40 is that the seed layer 130, grown by sputtering, is prone to breakage at the steps, leading to poor current density consistency. The steps are structures formed by one or more of the conductive sheet 10, wall film 80, top film 90, and thickening layer 120.

[0097] Of course, in addition to being electrically connected to the conductive sheet 10 via the thickened layer 120, in another embodiment, the electroplated interconnect 150 can also be directly connected to the conductive sheet 10 (not shown in the figure). In yet another embodiment, the electroplated interconnect 150 can also be directly connected to the first conductive post 40. In yet another embodiment, the electroplated interconnect 150 can also be directly connected to the seed layer 130.

[0098] In summary, when the electroplated structure is an electroplated interconnect 150, it can be electrically connected to at least one of the conductive sheet 10, the first conductive pillar 40, the thickened layer 120, and the seed layer 130. For example, the electroplated interconnect 150 can be electrically connected to both the thickened layer 120 and the seed layer 130 simultaneously. Furthermore, in some scenarios, when the electroplated interconnect 150 is electrically connected to one of the seed layer 130, the thickened layer 120, or the conductive sheet 10, the electroplated interconnect 150 can also be used to electroplat the first conductive pillar 40, improving the high uniformity of the first conductive pillar 40.

[0099] Figure 4 is a cross-sectional schematic diagram of the second type of electronic device provided in Embodiment 1 of this application, and Figure 5 is a cross-sectional schematic diagram of the fourth type of electronic device provided in Embodiment 1 of this application.

[0100] In some other possible implementations, as shown in FIG4, the seed layer 130 includes a first portion 131 that extends to the outer surface of the electronic device 100. The electronic device 100 may also include an electroplating line layer 160 that covers the surface of the first portion 131 of the seed layer 130. In this case, the first portion 131 of the seed layer 130 and the electroplating line layer 160 together constitute an electroplating structure.

[0101] During the fabrication of the electronic device 100, after the solder resist layer 140 is prepared, the electroplating line layer 160 and / or the first portion 131 are electrically connected to the negative electrode of the electroplating equipment. Electrons flowing out of the negative electrode of the electroplating equipment sequentially pass through the electroplating line layer 160, the seed layer 130, and the first conductive pillar 40 into the metal layer 30 to grow the second conductive pillar 50 on the surface of the metal layer 30. Therefore, by electrically connecting the first portion 131 and the electroplating line layer 160 to the negative electrode of the electroplating equipment, the current carrying capacity of the electroplated structure can be improved. Simultaneously, the second conductive pillar 50 can be electroplated on the surface of the metal layer 30, allowing the second conductive pillar 50 to directly contact the metal layer 30 while reducing the number of processes and lowering costs. Furthermore, the electroplating line layer 160, the metal layer 30, and the first conductive pillar 40 can be grown simultaneously through the seed layer 130, eliminating the need for an additional process to prepare the electroplating line layer 160, further reducing the number of processes and lowering costs.

[0102] In this embodiment, the electroplated line layer 160 is made of a conductive material, for example, copper.

[0103] In some other possible implementations, the seed layer 130 includes a first portion 131, which serves as an electroplating structure and extends to the outer surface of the electronic device 100. During the fabrication of the electronic device 100, the first portion 131 is used to electrically connect to the negative electrode of the electroplating equipment to directly grow the second conductive pillar 50 on the surface of the metal layer 30.

[0104] In summary, the above content describes several different electroplating structures. These different electroplating structures can be freely combined, meaning that the electronic device 100 can contain at least two different electroplating structures. For example, as shown in Figure 5, the electronic device 100 contains electroplated interconnects 150, electroplated line layers 160, and a first portion 131. Alternatively, the electroplated line layers 160 and the first portion 131 can be provided separately (as shown in Figure 4), or the electroplated interconnects 150 can be provided separately (as shown in Figure 3).

[0105] It should be noted that, in addition to the first part 131, the seed layer 130 also includes a second part and a third part. The second part is in direct contact with the first conductive post 40, and the third part is in direct contact with the metal layer 30.

[0106] In the above description, the electronic device 100 has a metal group, which includes multiple co-layered metal layers 30. However, in some possible implementations, the electronic device 100 may also include multiple metal groups (not shown in the figure) arranged along the thickness direction of the substrate 70 and multiple third conductive pillars (not shown in the figure), each metal group including multiple co-layered metal layers 30. The metal layers 30 in adjacent metal groups are connected by the third conductive pillars, that is, the third conductive pillars are located between adjacent metal groups. Along the thickness direction of the substrate 70, the metal layer 30 of the metal group closest to the substrate 70 is electrically connected to the conductive sheet 10 through the first conductive pillar 40, and the metal layer 30 of the metal group farthest from the substrate 70 is in direct contact with and electrically connected to the second conductive pillar 50.

[0107] Figure 6 is a schematic diagram of the first fabrication process of the electronic device shown in Figure 3. Figure 7 is a schematic diagram of the second fabrication process of the electronic device shown in Figure 3. Figure 8 is a schematic diagram of the third fabrication process of the electronic device shown in Figure 3. Figure 9 is a schematic diagram of the fourth fabrication process of the electronic device shown in Figure 3. Figure 10 is a schematic diagram of the fifth fabrication process of the electronic device shown in Figure 3. Figure 11 is a schematic diagram of the sixth fabrication process of the electronic device shown in Figure 3. Figure 12 is a schematic diagram of the seventh fabrication process of the electronic device shown in Figure 3. Figure 13 is a schematic diagram of the eighth fabrication process of the electronic device shown in Figure 3. Figure 14 is a schematic diagram of the ninth fabrication process of the electronic device shown in Figure 3.

[0108] Embodiment 1 of this application also provides a method for fabricating an electronic device 100, which includes the following steps:

[0109] S1. A functional unit 60, a conductive sheet 10, electroplated interconnects 150, and a thickened layer 120 covering the conductive sheet 10 are fabricated on a substrate 70, resulting in the structure shown in Figure 6. S2. A wall film 80 is fabricated and a first hole is formed to expose the surface of the thickened layer 120, resulting in the structure shown in Figure 7. S3. A roof film 90 is fabricated and a second hole is formed, which communicates with the first hole to form a first through-hole exposing the surface of the thickened layer 120, resulting in the structure shown in Figure 8. S4. A seed layer 130 is formed, resulting in the structure shown in Figure 9. S5. Spin coating, exposure, and development are performed to pattern the metal layer 30, resulting in the structure shown in Figure 10. S6. The surface of the seed layer 130 is surface-treated (e.g., Ar plasma sputtering, acid cleaning), and then the metal layer 30 and the first conductive pillar 40 are deposited using electroplating or chemical plating methods, resulting in the structure shown in Figure 11. S7. Remove the photoresist layer 170 and etch the seed layer 130, removing a portion of the seed layer 130 to obtain the structure shown in Figure 12. S8. Prepare the solder resist layer 140 using methods such as spin coating (or film application, spray coating, etc.), exposure, development, and curing. Create openings in the solder resist layer 140 according to the deposition of the second conductive pillar 50 and the position of the electrical connector 20, resulting in the structure shown in Figure 13. S9. Using pre-defined electroplating interconnects 150, electroplat copper, nickel, and tin in a single layer or stack in an electroplating device to grow the second conductive pillar 50 on the surface of the metal layer 30, resulting in the structure shown in Figure 14. S10. Prepare the electrical connector 20. Taking the electrical connector 20 as a solder ball as an example, it can be prepared by conventional methods such as solder printing and ball placement; or by another round of tin plating; finally, reflow to prepare the solder ball, resulting in the structure shown in Figure 3.

[0110] Example 2

[0111] Figure 15 is a cross-sectional schematic diagram of an electronic device provided in Embodiment 2 of this application.

[0112] The difference between Figure 15 and Figure 3 is that at least one of the multiple metal layers 30 in the electronic device 100 is a thin metal layer (as shown in Figure 15, 30a), and each thin metal layer (as shown in Figure 15, 30a) is located on the side of the top film 90 away from the substrate 70. At least a portion of the orthographic projection of the cavity 110 onto the substrate 70 lies within the orthographic projection of the thin metal layer (as shown in Figure 15, 30a) onto the substrate 70. That is, the orthographic projection of the cavity 110 onto the substrate 70 at least partially coincides with the orthographic projection of the thin metal layer onto the substrate 70. This improves the strength of the top film 90 as the cavity wall of the cavity 110, increasing molding resistance, supporting larger cavity 110 designs, improving molding reliability, preventing the top film 90 from collapsing towards the functional unit 60, and ensuring the normal operation of the electronic device 100. Furthermore, during use, it also prevents the top film 90 from collapsing, improving the reliability of the electronic device 100. In addition to increasing molding, the metal thin film layer also serves as a redistribution layer, allowing the first conductive post 40 and the second conductive post 50 to be staggered, which helps to miniaturize the electronic device 100.

[0113] The shape of the metal thin film layer can be similar to, but is not limited to, a large shape such as a rectangle or square. Furthermore, the material of the metal thin film layer is a metal, such as silver or copper. When the material of the metal thin film layer is copper, it can also be called a copper thin film layer.

[0114] As shown in Figure 15, the electronic device 100 has multiple metal layers 30 including a first metal layer 30a and a second metal layer 30b. The number of first metal layers 30a is at least one, and the first metal layer 30a serves as a metal thin film layer. The number of second metal layers 30b is at least one, and the second metal layer 30b may include, but is not limited to, a redistribution layer.

[0115] In one embodiment, the orthographic projection of the cavity 110 onto the substrate 70 lies inside the orthographic projection of the metal thin film layer onto the substrate 70; that is, the orthographic projection of the cavity 110 onto the substrate 70 coincides with the orthographic projection of the metal thin film layer onto the substrate 70. In another embodiment, a portion of the orthographic projection of the cavity 110 onto the substrate 70 lies inside the orthographic projection of the metal thin film layer onto the substrate 70; that is, the orthographic projection of the cavity 110 onto the substrate 70 partially coincides with the orthographic projection of the metal thin film layer onto the substrate 70.

[0116] Typically, an electronic device 100 has multiple cavities 110 inside. In one embodiment, the multiple cavities 110 share a metal thin film layer, and at least a portion of the orthogonal projection of the multiple cavities 110 onto the substrate 70 is located inside the orthogonal projection of the same metal thin film layer onto the substrate 70.

[0117] Alternatively, in another embodiment, there are multiple metal thin film layers, with any two metal thin film layers spaced apart along a direction perpendicular to the thickness direction of the metal layer 30. Each cavity 110 corresponds one-to-one with a metal thin film layer, and at least a portion of the orthographic projection of each cavity 110 onto the substrate 70 lies within the orthographic projection of the corresponding metal thin film layer onto the substrate 70. That is, the orthographic projection of each cavity 110 onto the substrate 70 at least partially coincides with the orthographic projection of the corresponding metal thin film layer onto the substrate 70. This avoids the area of ​​a single metal thin film layer being too large, thereby reducing stress and preventing delamination between the metal thin film layer and the seed layer 130.

[0118] In some possible implementations, at least one metal thin film layer is electrically connected to a grounded first conductive post 40. In this case, the metal thin film layer can be electrically connected to one or more grounded first conductive posts 40. In this way, the grounded metal thin film layer also has a shielding function, which can shield the functional unit 60 within the cavity 110, thereby improving the shielding capability and increasing the isolation performance.

[0119] When the metal thin film layer is electrically connected to multiple grounded first conductive posts 40, the following measures can be taken to improve or even solve the problem in order to ensure the height consistency of the second conductive posts 50:

[0120] Figure 16 is a schematic diagram of an electroplated interconnect and metal thin film layer provided in Embodiment 2 of this application.

[0121] In one embodiment, as shown in FIG16, the plurality of metal layers 30 includes a first metal layer 30a and a second metal layer 30b. The first metal layer 30a is a thin metal film layer, and corresponds to a plurality of grounded first conductive posts 40. The second metal layer 30b corresponds to one first conductive post 40. The electroplating structure includes a first electroplated interconnect 150a and a second electroplated interconnect 150b. The width of the first electroplated interconnect 150a is smaller than the width of the second electroplated interconnect 150b. Each of the plurality of first conductive posts 40 corresponding to the first metal layer 30a is electrically connected to one first electroplated interconnect 150a, and the first conductive post 40 corresponding to the second metal layer 30b is electrically connected to one second electroplated interconnect 150b. It can be seen that the first metal layer 30a corresponding to the multiple grounded first conductive pillars 40 also corresponds to the multiple first electroplated interconnects 150a. The multiple grounded first conductive pillars 40 and the multiple first electroplated interconnects 150a corresponding to the first metal layer 30a are in one-to-one correspondence, and the corresponding first electroplated interconnects 150a are electrically connected to the grounded first conductive pillars 40.

[0122] When the metal thin film layer (30a in Figure 16) is electrically connected to multiple grounded (GND) first conductive pillars 40, in order to avoid excessive differences in height between the grounded second conductive pillars 50 and the independent (e.g., transmitter TX, receiver RX, antenna ANT, etc.) second conductive pillars 50, the first electroplated interconnect 150a is electrically connected to the grounded first conductive pillar 40, and the second electroplated interconnect 150b is electrically connected to the independent second conductive pillars 50. The width of the first electroplated interconnect 150a is smaller than the width of the second electroplated interconnect 150b, and the cross-sectional area of ​​the first electroplated interconnect 150a is smaller than the cross-sectional area of ​​the second electroplated interconnect 150b, so that the resistance of the first electroplated interconnect 150a is greater than the resistance of the second electroplated interconnect 150b. This reduces the current density at the growth location of the grounded second conductive pillar 50, and thus the current density at the growth location of the grounded second conductive pillar 50 and the current density at the growth location of the independent second conductive pillar 50 are within a reasonable range, thereby achieving the purpose of improving the height consistency of the second conductive pillars 50.

[0123] It should be noted that when there are multiple metal thin film layers, some may correspond to multiple grounded first conductive posts 40, and some may correspond to one first conductive post 40. For example, when there are three metal thin film layers, one of them corresponds to multiple grounded first conductive posts 40 and is electrically connected to the corresponding multiple grounded first conductive posts, while the other two correspond to one first conductive post 40 and are electrically connected to their respective first conductive posts 40.

[0124] Figure 17 is a schematic diagram of another structure of the electroplated interconnect and metal thin film layer provided in Embodiment 2 of this application.

[0125] In another embodiment, the electroplating structure includes a plurality of electroplated interconnects 150, at least one metal thin film layer (as shown in Figure 17, 30a) corresponding to N electroplated interconnects 150 and M grounded first conductive posts 40. Each of the N electroplated interconnects 150 corresponding to the metal thin film layer (as shown in Figure 17, 30a) is electrically connected to a grounded first conductive post 40, where M and N are both positive integers, and M is greater than N. Therefore, when the metal thin film layer is electrically connected to the plurality of grounded first conductive posts 40, some of the grounded first conductive posts 40 are electrically connected to the electroplated interconnects 150. For example, as shown in Figure 17, the metal thin film layer (as shown in Figure 17, 30a) is electrically connected to four grounded first conductive posts 40. In this case, two grounded first conductive posts 40 are electrically connected to the electroplated interconnects 150. Of course, it is also possible that one or three grounded first conductive posts 40 are electrically connected to the electroplated interconnects 150.

[0126] The specific values ​​of M and N are not restricted here. For example, M can be 4, and N can be 1, 2, 3, etc. The specific values ​​of M and N can be obtained by ensuring that the heights of all the second conductive posts 50 are consistent.

[0127] When the metal thin film layer is electrically connected to multiple grounded (GND) first conductive posts 40, to avoid excessive differences in height between the grounded second conductive posts 50 and independent (e.g., transmitter TX, receiver RX, antenna ANT, etc.) second conductive posts 50, the number of electroplated interconnects 150 corresponding to the metal thin film layer is less than the number of first conductive posts 40 corresponding to the metal thin film layer. This reduces the current density at the growth location of the grounded second conductive posts 50, ensuring that the current density at the growth location of the grounded second conductive posts 50 is within a reasonable range compared to the current density at the growth location of independent second conductive posts 50, thereby improving the height consistency of the second conductive posts 50. Furthermore, reducing the number of electroplated interconnects 150 also simplifies the design of the electronic device 100.

[0128] It should be noted that when there are multiple metal thin film layers, one or both of the above two methods can be used, and there are no specific restrictions here. That is to say, the electronic device 100 can use both of the above methods at the same time.

[0129] Figure 18 is a schematic diagram of the first fabrication process of the electronic device shown in Figure 15, Figure 19 is a schematic diagram of the second fabrication process of the electronic device shown in Figure 15, and Figure 20 is a schematic diagram of the third fabrication process of the electronic device shown in Figure 15.

[0130] Embodiment 2 of this application also provides a method for fabricating an electronic device 100, which includes the following steps:

[0131] S1. Fabricate functional units 60, conductive sheets 10, and electroplated interconnects 150 on substrate 70, and fabricate a thickened layer 120 covering the conductive sheets 10. S2. Fabricate a wall film 80 and create a first hole to expose the surface of the thickened layer 120. S3. Fabricate a roof film 90 and create a second hole, which communicates with the first hole to form a first through-hole exposing the surface of the thickened layer 120. S4. Create a seed layer 130, which covers the surface of the roof film 90 away from the substrate 70 and the inner wall of the first through-hole. S5. Perform spin coating, exposure, development, etc., to pattern the redistribution layer (30b in Figure 15) and the metal thin film layer (30a in Figure 15). S6. Surface treatment is performed on the surface of the seed layer 130 (e.g., Ar plasma sputtering, acid cleaning), and then a redistribution layer (30b in Figure 15), a metal thin film layer (30a in Figure 15), and the first conductive pillar 40 are deposited by electroplating or chemical plating to obtain the structure shown in Figure 18. S7. The photoresist is removed, and the seed layer 130 is etched to remove a portion of the seed layer 130. S8. A solder resist layer 140 is prepared by methods such as spin coating (or film lamination, spray coating, etc.), exposure, development, and curing. Holes are made in the solder resist layer 140 according to the deposition of the second conductive pillar 50 and the position of the electrical connector 20 to obtain the structure shown in Figure 19. S9. Using the preset electroplated interconnects 150, single or stacked layers of copper, nickel, and tin are electroplated in an electroplating device to grow the second conductive pillar 50 on the surface of the metal thin film layer (30a in Figure 15) and the redistribution layer (30b in Figure 15) to obtain the structure shown in Figure 20. S10. Prepare electrical connector 20. Taking electrical connector 20 as a solder ball as an example, it can be prepared by conventional methods such as solder printing and ball placement; or by electroplating tin again; and finally reflow to prepare solder balls, resulting in the structure shown in Figure 15.

[0132] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, an indirect connection through an intermediate medium, or the internal connection of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this application according to the specific circumstances. The terms "first," "second," "third," "fourth," etc. (if present) are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0133] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of this application, and are not intended to limit them. Although the embodiments of this application have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. An electronic device (100), characterized in that, It includes a conductive sheet (10), an electrical connector (20), a metal layer (30), a first conductive pillar (40), a second conductive pillar (50), a seed layer (130), and an electroplated structure; The first end of the electroplating structure is electrically connected to the metal layer (30), and the second end of the electroplating structure extends from the first end to the outer surface of the electronic device (100); The conductive sheet (10) is electrically connected to the electroplating structure and the seed layer (130); The first conductive post (40) is in direct contact with the seed layer (130), and the first conductive post (40) is electrically connected to the metal layer (30); The second conductive post (50) is in direct contact with the metal layer (30); The electrical connector (20) is electrically connected to the second conductive post (50).

2. The electronic device (100) according to claim 1, characterized in that, The electroplating structure includes electroplated interconnects (150); The first end of the electroplated interconnect (150) is directly connected to the conductive sheet (10).

3. The electronic device (100) according to claim 2, characterized in that, The electronic device (100) includes a thickened layer (120); The first end of the electroplated interconnect (150) is integrally formed with the thickened layer (120); The thickened layer (120) covers the conductive sheet (10).

4. The electronic device (100) according to claim 1, characterized in that, The seed layer (130) includes a first portion (131), and the first portion (131) of the seed layer (130) serves as the electroplating structure; The first portion (131) extends to the outer surface of the electronic device (100).

5. The electronic device (100) according to claim 4, characterized in that, The electroplating structure also includes an electroplating line layer (160); The electroplated line layer (160) covers the surface of the first portion (131) of the seed layer (130).

6. The electronic device (100) according to any one of claims 1-5, characterized in that, The electronic device (100) further includes a substrate (70), a wall film (80), a top film (90), and a functional unit (60); The wall film (80), the functional unit (60), and the conductive sheet (10) are all connected to the same surface of the substrate (70). The top film (90) is located on the side of the wall film (80) away from the substrate (70). The wall film (80), the substrate (70), and the top film (90) together enclose a cavity (110). The functional unit (60) is disposed inside the cavity (110) and electrically connected to the conductive sheet (10). The conductive sheet (10), the metal layer (30), the first conductive pillar (40), the second conductive pillar (50), and the electrical connector (20) are all located outside the cavity (110). The number of metal layers (30) is multiple, and at least one of the metal layers (30) is a redistribution layer.

7. The electronic device (100) according to claim 6, characterized in that, At least one of the metal layers (30) is a metal thin film layer, and each of the metal thin film layers is located on the side of the top film (90) away from the substrate (70); The orthographic projection of the cavity (110) on the substrate (70) at least partially overlaps with the orthographic projection of the metal thin film layer on the substrate (70).

8. The electronic device (100) according to claim 7, characterized in that, The number of metal thin film layers is multiple, and any two metal thin film layers are spaced apart along a direction perpendicular to the thickness direction of the metal layer (30); There are multiple cavities (110), and each cavity (110) corresponds to a metal thin film layer. The orthographic projection of each cavity (110) on the substrate (70) at least partially overlaps with the orthographic projection of the corresponding metal thin film layer on the substrate (70).

9. The electronic device (100) according to any one of claims 6-8, characterized in that, The plurality of metal layers (30) include a first metal layer (30a) and a second metal layer (30b), wherein the first metal layer (30a) is the metal thin film layer, the first metal layer (30a) corresponds to a plurality of grounded first conductive posts (40), and the second metal layer (30b) corresponds to one first conductive post (40); The electroplating structure includes a first electroplated interconnect (150a) and a second electroplated interconnect (150b). The width of the first electroplated interconnect (150a) is smaller than the width of the second electroplated interconnect (150b). Each of the plurality of first conductive pillars (40) corresponding to the first metal layer (30a) is electrically connected to one of the first electroplated interconnects (150a). The first conductive pillar (40) corresponding to the second metal layer (30b) is electrically connected to one of the second electroplated interconnects (150b).

10. The electronic device (100) according to any one of claims 6-8, characterized in that, The electroplating structure includes a plurality of electroplating interconnects (150), at least one of the metal thin film layers corresponds to N of the electroplating interconnects (150) and M grounded first conductive posts (40), each of the N electroplating interconnects (150) corresponding to the metal thin film layer is electrically connected to a grounded first conductive post (40), M and N are both positive integers, and M is greater than N.

11. An electronic device, characterized in that, It includes a circuit board (700) and an electronic device (100) as claimed in any one of claims 1 to 10, wherein the electronic device (100) is electrically connected to the circuit board (700).

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