Apparatus and method for reducing contaminant accumulation in a radiation source

The exhaust chain with temperature-controlled portions and gas flows effectively manages contaminant removal from radiation sources, reducing accumulation and protecting the exposure apparatus, thus improving semiconductor manufacturing efficiency.

WO2026124837A1 Publication Date: 2026-06-18ASML NETHERLANDS BV
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
ASML NETHERLANDS BV
Filing Date
2025-10-21
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

Contaminants such as tin vapor and particles accumulate on the surfaces of radiation sources used in semiconductor manufacturing, necessitating frequent cleaning and potentially damaging the exposure apparatus.

⚗Method used

An apparatus and method involving an exhaust chain with temperature-controlled portions to manage and direct vapor-rich exhaust streams, utilizing gas flows to minimize contaminant deposition, and incorporating heaters and cooling systems to maintain optimal temperatures for effective contaminant removal.

🎯Benefits of technology

Reduces contaminant accumulation on radiation source surfaces, minimizing the need for frequent cleaning and protecting the exposure apparatus by ensuring efficient removal of tin-laden gases, thereby enhancing throughput and yield in semiconductor manufacturing.

✦ Generated by Eureka AI based on patent content.

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Abstract

An apparatus for generating radiation includes a source vessel configured for the passage of radiation and an exhaust chain attached to the source vessel. The exhaust chain consists of a first and a second portion. The first portion extends from a first end connected to the source vessel to a second end connected to the second portion. The first portion is configured to be maintained at a lower temperature than the second portion.
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