Method and system for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of aln onto a foreign substrate

Abstract

The invention relates to a method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate. In the method, a magnetron sputtering system is provided, the foreign substrate is temperature-controlled to a temperature of < 800°C, a pulsed voltage having a duty cycle in the range of < 1 is applied between a magnetron and the foreign substrate, and a level of the applied pulsed voltage, a level of the duty cycle and / or a level of an inflow of a nitrogen-containing gas from a gas source into the vacuum chamber is controlled on the basis of a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by a detector, such that a metallic working point is set or a reactive working point is set. The invention also relates to a system which is configured for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AlN onto a foreign substrate.

Description

[0001] Fraunhofer Society...eV

[0002] P149487PC00

[0003] Method and apparatus for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate. A method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate is provided.In this process, a magnetron sputtering system is provided. The foreign substrate is heated to a temperature of < 800 °C. A pulsed electrical voltage with a duty cycle of < 1 is applied between a magnetron and the foreign substrate. The magnitude of the applied pulsed electrical voltage, the duty cycle, and / or the inflow of nitrogenous gas from a gas source into the vacuum chamber are regulated based on the concentration of aluminum and nitrogen atoms in the vacuum chamber determined by a detector. This regulation is such that a metallic operating point or a reactive operating point is established. Furthermore, a system is provided that is configured for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate.

[0004] Thin films of II I nitrides growing in the wurtzite crystal structure are polar materials. This means that an electric field forms spontaneously within them. Polarity (orientation of the internal electric field) is an important property, as it dictates, for example, the design of electronic components. Therefore, it is technically important to be able to grow these materials with uniform polarity (aluminum-polar or nitrogen-polar) over large areas; ideally, with the ability to adjust the polarity. For the heteroepitaxial deposition of the nitride layers onto a crystalline substrate using magnetron sputtering, a suitable method must therefore be found that allows the polarity to be homogeneously adjusted on common foreign substrates such as Si(III) or sapphire(OOO).

[0005] Established methods for heteroepitaxy of AIN on Si(III) and sapphire(OOI) include metal-organic chemical vapor deposition (MOC) and molecular beam epitaxy. Some of these methods allow for adjusting the polarity of the layers. This can be achieved, for example, by changing the off-cut of the foreign substrates, growth with the addition of oxygen, growth on partially oxidized layers, annealing the foreign substrates in ammonia, or using nucleation layers such as metallic aluminum. These approaches require additional equipment on the growth systems that is not needed for the actual growth of the desired layers. Many of these approaches could also be applied to magnetron sputtering, but they do not utilize the unique advantages of magnetron sputtering.

[0006] A well-known method for changing the polarity of wurtzite-AIN is to chemically modify the surface of the foreign substrate. According to current technology, this requires separate processes such as annealing in ammonia or the deposition of a metallic nucleation layer. This approach is complex and time-consuming.

[0007] Reactive sputtering without control of the reactive operating point and other measures would generally result in a non-reproducible polarity of the deposited layers or a reproducible but non-adjustable polarity of the deposited layers.

[0008] Based on this, the object of the present invention was to provide a method and a system for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate, which overcome at least one disadvantage known in the prior art. In particular, the method and the system should make it possible to reactively deposit crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN of a defined polarity onto a foreign substrate in a simpler, faster and more reproducible manner.

[0009] The problem is solved by the method with the features of claim 1 and the system with the features of claim 9. The dependent claims describe advantageous further developments.

[0010] According to the invention, a method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate is provided, comprising or consisting of the following steps: a) providing a magnetron sputtering system comprising a vacuum chamber, a vacuum pump, a gas source containing a noble gas and a nitrogen-containing gas containing or consisting of N2 and / or a nitrogen-atom-containing gas, a magnetron equipped with a target consisting of a target material, wherein the target material is selected from the group consisting of aluminum and aluminum alloys (e.g., an aluminum alloy selected from the group consisting of AISc, AIY, AlCr, and combinations thereof), an electrical voltage source suitable for supplying a pulsed electrical voltage, a substrate, wherein a surface of the substrate facing the magnetron,a) a material that does not contain or consist of a target material, a temperature control device for temperature control of the substrate, and a detector for determining a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber; b) temperature control of the substrate to a temperature of < 800 °C via the temperature control device; c) application of a pulsed electrical voltage with a duty cycle in the range of <1 between the magnetron and the substrate via the electrical voltage source; and d) regulation of the magnitude of the applied pulsed electrical voltage, the duty cycle, and / or the amount of nitrogenous gas flowing from the gas source into the vacuum chamber based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0011] According to the invention, the duty cycle is understood in particular to be the following quotient (or ratio): Pulse-on time / (Pulse-on time + Pulse-off time), where Pulse-on time is understood to be the time during which voltage is applied to the target under consideration and Pulse-off time is understood to be the sum of all times during which no voltage is applied to the target under consideration.

[0012] According to the invention, the metallic operating point is understood to mean, in particular, that the collision ratio between nitrogen and aluminum particles on the substrate corresponds to a lowest value at which stoichiometric AIN layers are just produced (N / Al > 0.98). According to the invention, the reactive operating point is understood to mean, in particular, that the collision ratio between nitrogen and aluminum particles on the substrate corresponds to at least 1.3 times the lowest value at which stoichiometric AIN layers are just produced (N / Al > 0.98) (i.e., at least 1.3 times the value of the metallic operating point). The collision ratio can be determined by evaluating signals from the detector of the magnetron sputtering system. With the method according to the invention, it is possible to produce crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN of a defined polarity (e.g.,to reactively deposit AIN layers, AIScN layers, AIYN layers and / or AICrN layers) onto a foreign substrate in a simpler, faster and more reproducible manner.

[0013] The reproducible production of a defined polarity is achieved by precisely adjusting (i.e., regulating) the operating point (metallic or reactive) within the process. Regulating the operating point also allows for long-term stability of the process, as target erosion can be compensated for. The process is simpler and faster than known state-of-the-art methods because no separate processes (such as ammonia annealing or the deposition of a metallic nucleation layer) are required.

[0014] The detector of the magnetron sputtering system provided in step a) can include or consist of an optical detector configured to detect an intensity of electromagnetic radiation with a wavelength in the range of 400 to 800 nm, wherein the optical detector is preferably configured to detect the intensity of at least one optical emission line from aluminum atoms and / or nitrogen-containing atoms and / or molecules. The advantage here is that the operating point can be controlled via the intensity of the optical emission lines from excited atomic aluminum and / or nitrogen-containing molecules from the magnetron discharge in the visible region of the electromagnetic spectrum.

[0015] Furthermore, the detector of the magnetron sputtering system provided in step a) can contain or consist of a mass spectrometer configured to detect a concentration of aluminum atoms and / or nitrogen-containing atoms and / or molecules. The advantage here is that the operating point can be controlled by means of a concentration of nitrogen-containing molecules in the vacuum chamber determined by mass spectrometry. Additionally, the detector of the magnetron sputtering system provided in step a) can contain or consist of a detector for measuring the electrical impedance of a magnetron discharge. The advantage here is that the operating point can be controlled via the electrical impedance of the magnetron discharge. Based on the detector signal, the desired operating point can be set by the control unit preferably specifying the inflow of the nitrogen-containing gas.Alternatively, a suitable level of applied pulsed electrical voltage and / or duty cycle can be specified.

[0016] In a preferred embodiment of the method, a duty cycle and an electrical power are specified (i.e., kept constant), and by setting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of the resulting pulsed electrical voltage (controlled variable), or the level of optical plasma emission (controlled variable), is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0017] In a first alternative embodiment, the electrical voltage and duty cycle are kept constant, and by adjusting the level of inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of electrical power (controlled variable) is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0018] In a second alternative embodiment, the electrical power and the level of inflow of nitrogen-containing gas from the gas source into the vacuum chamber are kept constant, and by setting a duty cycle (manipulated variable) the level of optical plasma emission (controlled variable) is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector in such a way that a metallic operating point or a reactive operating point is set.In a third alternative embodiment, the duty cycle and the level of the inflow of the nitrogen-containing gas from the gas source into the vacuum chamber are kept constant, and by setting an electrical power (manipulated variable) an optical plasma emission level (controlled variable), or an impedance level (controlled variable), based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, is regulated in such a way that a metallic operating point or a reactive operating point is set.

[0019] In a fourth alternative embodiment, the duty cycle and the level of the inflow of the nitrogen-containing gas from the gas source into the vacuum chamber are kept constant, and by setting an electrical voltage (manipulated variable) an impedance level (controlled variable) based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector is regulated in such a way that a metallic operating point or a reactive operating point is set.

[0020] In step a) of the process, a magnetron sputtering system can be provided which includes a vacuum pump with which a vacuum is created in the vacuum chamber before carrying out a reactive deposition, the final pressure of which is in the range of < 1 10 -6 Pa is located.

[0021] Apart from that, in step a) of the process a magnetron atomization system can be provided which is configured, preferably controlled via a control unit of the magnetron atomization system, to supply the noble gas and the nitrogen-containing gas to the vacuum chamber from the gas source after a vacuum has been established in the vacuum chamber, particularly preferably in a volume ratio of nitrogen-containing gas to noble gas which is in the range of 0.2 to 0.4, particularly in the range of 0.3, optionally up to a working pressure in the range of 0.1 to 1 Pa.

[0022] Furthermore, in step a) of the process, a magnetron sputtering system can be provided which includes a gas source containing a nitrogen-containing gas and argon. Additionally, in step a) of the process, a magnetron sputtering system can be provided which includes a magnetron configured as a double-ring magnetron with at least one target, wherein the target material consists of a target material selected from the group consisting of aluminum and aluminum alloys (e.g., AISc, AIY, and / or AlCr). The double-ring magnetron can be the DRM-R 400 double-ring magnetron (Fraunhofer Institute for Electron Beam and Plasma Technology FEP, Winterbergstraße 28, 01277 Dresden, Germany).

[0023] Furthermore, in step a) of the method, a magnetron sputtering system can be provided which includes an electrical voltage source suitable for delivering a pulsed electrical voltage in the range of 100 to 400 volts. Suitability for delivering a pulsed electrical voltage is understood in particular to mean suitability for delivering a time-averaged value of a pulsed voltage over a pulse-on time and a pulse-off time; that is, the voltage values ​​(specified here) refer to the time-averaged value of a pulsed voltage over the pulse-on time and the pulse-off time. The electrical voltage source is preferably suitable for delivering the pulsed electrical voltage in unipolar mode and / or bipolar pulse mode.Unipolar pulse mode refers to the application of an electrical voltage in which negative pulses are applied to the sputtering target, with an electrically isolated anode or the system ground acting as the counter electrode. Bipolar pulse mode requires an arrangement with at least two electrically isolated targets. A pulsed voltage of alternating polarity is applied between these at least two electrically isolated targets. Selecting the pulse mode (unipolar or bipolar) allows for greater control over the polarity via the (reactive) operating point. This is possible with all sputtering sources that offer a choice between unipolar and bipolar pulse modes. Magnetron sputtering sources, particularly those configured as double-ring magnetrons, are well-suited for this purpose.

[0024] Apart from this, in step a) of the process, a magnetron sputtering system can be provided which contains a substrate containing or consisting of Si(III) or sapphire(OOI). The magnetron sputtering system can further include an additional gas source containing a hydrogen-containing gas, wherein hydrogen-containing gas is supplied to the vacuum chamber after a vacuum has been established in the vacuum chamber. The advantage is that the setting of a desired polarity can be carried out even more precisely and reproducibly. The hydrogen-containing gas is preferably selected from the group consisting of hydrogen, ammonia, hydrogen-oxygen mixtures, and combinations thereof.

[0025] For the deposition of an aluminum-polar AIN layer on the Si(III) foreign substrate, the process can have the following features: The magnetron sputtering system contains a magnetron designed as a double-ring magnetron; a vacuum is created in the vacuum chamber with the vacuum pump before reactive deposition is carried out, the final pressure of which is in the range of < 1-10 6In step a), the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of Si(III), and the Si(III) substrate is tempered to a temperature of <800 °C in step b), wherein a reactive operating point is set in step d). For this purpose, a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, is preferably applied in step c) to an outer target of the double-ring magnetron in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa. Particularly preferably, in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of the resulting pulsed electrical voltage (controlled variable) in the range of <280 V, preferably in the range of 230 to 270 V, particularly preferably in the range of 240 V to 260 V, is regulated; or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, by adjusting the level of inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of the resulting pulsed electrical voltage (controlled variable) in the range of 130 V to 190 V, preferably in the range of 140 to 180 V, particularly preferably in the range of 150 V to 170 V, is regulated.

[0026] For the deposition of a nitrogen-polar AIN layer on the Si(III) foreign substrate, the process can have the following features: The magnetron sputtering system contains a magnetron designed as a double-ring magnetron; a vacuum is created in the vacuum chamber with the vacuum pump before carrying out a reactive deposition, the final pressure of which is in the range of < 1-10 6The substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of Si(III), and the Si(III) substrate is tempered to a temperature of <800 °C in step b), wherein a metallic operating point is set in step d). For this purpose, a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, is preferably applied in step c) to an outer target of the double-ring magnetron in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa. Particularly preferably, in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of the resulting pulsed electrical voltage (controlled variable) in the range of >280 V, preferably in the range of 290 to 350 V, particularly preferably in the range of 300 V to 340 V, is regulated; or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of the resulting pulsed electrical voltage (controlled variable) in the range of 140 V to 200 V, preferably in the range of 150 to 190 V, particularly preferably in the range of 160 V to 180 V, is regulated. For the deposition of an aluminum-polar AIN layer on a sapphire (OOOl) foreign substrate, the process can have the following features: The magnetron sputtering system contains a magnetron,which is designed as a double-ring magnetron, a vacuum is created in the vacuum chamber using the vacuum pump before a reactive deposition is carried out, the final pressure of which is in the range of < 1-10', 6In step a), the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of sapphire(0001) and the sapphire(0001) substrate is tempered to a temperature of <700 °C in step b), wherein a metallic operating point is set in step d). For this purpose, a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, is preferably set in step c) on an outer target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) the level of the resulting pulsed electrical voltage (controlled variable) in the range of >240 V, preferably in the range of 250 to 330 V, particularly preferably in the range of 260 V to 280 V, is regulated; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) to a level of the resulting pulsed electrical voltage (controlled variable) in the range of >400 V, preferably in the range of 405 V to 450 V,Particularly preferably in the range of 410 V to 430 V, regulated. For the deposition of a nitrogen-polar AIN layer on a sapphire (OOOl) foreign substrate, the process can have the following features: The magnetron sputtering unit contains a magnetron designed as a double-ring magnetron; a vacuum is created in the vacuum chamber by the vacuum pump before reactive deposition is carried out, the final pressure of which is in the range of < 1-10‰. 6In step a), the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of sapphire(0001) and the sapphire(0001) substrate is tempered to a temperature of <700 °C in step b), wherein a reactive operating point is set in step d). For this purpose, a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, is preferably set in step c) on an outer target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) the level of the resulting pulsed electrical voltage (controlled variable) in the range of <240 V, preferably in the range of 180 to 230 V, particularly preferably in the range of 200 V to 220 V, is regulated; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) to a level of the resulting pulsed electrical voltage (controlled variable) in the range of <400 V, preferably in the range of 240 to 395 V,Especially preferred in the range of 260 V to 390 V, regulated.

[0027] According to the invention, a system for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate is further provided, comprising or consisting of: a) a magnetron sputtering system comprising a vacuum chamber, a vacuum pump, a gas source containing a noble gas and a nitrogen-containing gas containing or consisting of N2 and / or a nitrogen-atom-containing gas, a magnetron equipped with a target consisting of a target material, wherein the target material is selected from the group consisting of aluminum and aluminum alloys (e.g., an aluminum alloy selected from the group consisting of AISc, AIY, AlCr, and combinations thereof), an electrical voltage source suitable for delivering a pulsed electrical voltage, and a substrate, wherein a surface of the substrate facing the magnetron comprises a material.a) a magnetron that does not contain or consist of a target material, a temperature control device for temperature control of the substrate, and a detector for determining a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber; and b) a control unit; wherein the control unit is configured to cause the temperature control device to temperature the substrate to a temperature of < 800 °C, wherein the control unit is configured to cause the electrical voltage source to apply a pulsed electrical voltage with a duty cycle in the range of <1 between the magnetron and the substrate, and wherein the control unit is configured to regulate a level of the applied pulsed electrical voltage, a level of the duty cycle and / or a level of inflow of the nitrogen-containing gas from the gas source into the vacuum chamber based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such thatthat a metallic operating point or a reactive operating point is set.

[0028] With the apparatus according to the invention, it is possible to reactively deposit crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN of a defined polarity onto a foreign substrate in a simpler, faster and more reproducible manner.

[0029] In a preferred embodiment of the system, the control unit is configured to specify (i.e., keep constant) a duty cycle and an electrical power, and to regulate, by setting an amount of inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), an amount of the resulting pulsed electrical voltage (controlled variable), or an amount of optical plasma emission (controlled variable), based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0030] In a first alternative, the control unit is configured to keep the electrical voltage and duty cycle constant and to regulate the level of electrical power (controlled variable) based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector by setting a level of inflow of nitrogen-containing gas from the gas source into the vacuum chamber, such that a metallic operating point or a reactive operating point is set.

[0031] In a second alternative, the control unit is configured to keep the electrical power and the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber constant, and to regulate the level of optical plasma emission (controlled variable) based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector by setting a duty cycle (manipulated variable) in such a way that a metallic operating point or a reactive operating point is set.

[0032] In a third alternative, the control unit is configured to keep the duty cycle and the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber constant and to regulate, by setting an electrical power (manipulated variable), the level of optical plasma emission (controlled variable) or the level of impedance (controlled variable), based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, in such a way that a metallic operating point or a reactive operating point is set.

[0033] In a fourth alternative, the control unit is configured to keep the duty cycle and the amount of nitrogen-containing gas flowing from the gas source into the vacuum chamber constant, and to regulate an impedance level (controlled variable) by setting an electrical voltage (manipulated variable) based on a concentration of aluminum and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is established.

[0034] The system can include a magnetron sputtering unit containing a vacuum pump which is caused by a configuration of the control unit to create a vacuum in the vacuum chamber prior to performing a reactive deposition, the ultimate pressure of which is in the range of < 1 10 -6 Pa is located.

[0035] Furthermore, the system can include a magnetron atomization system configured, preferably controlled via a control unit of the magnetron atomization system, to supply the noble gas and the nitrogen-containing gas from the gas source to the vacuum chamber after a vacuum has been established in the vacuum chamber, particularly preferably in a volume ratio of nitrogen-containing gas to noble gas that is in the range of 0.2 to 0.4, particularly 0.3, optionally up to a working pressure in the range of 0.1 to 1 Pa.

[0036] Furthermore, the system can include a magnetron sputtering system containing a gas source containing nitrogen and argon. Additionally, the system can include a magnetron sputtering system containing a gas source containing a magnetron configured as a double-ring magnetron with at least one target, wherein the target material is selected from the group consisting of aluminum and aluminum alloys.

[0037] Furthermore, the system may include a magnetron sputtering unit containing a gas source and an electrical voltage source suitable for delivering a pulsed electrical voltage in the range of 100 to 400 volts. The suitability for delivering a pulsed electrical voltage is understood to mean, in particular, the suitability for delivering a time-averaged pulsed voltage over a pulse-on and a pulse-off period. The electrical voltage source is preferably suitable for delivering the pulsed electrical voltage in unipolar mode and / or bipolar pulse mode.

[0038] Furthermore, the plant may include a magnetron sputtering unit containing a gas source containing a substrate containing or consisting of Si(III) or Sa- phir(OOOl).

[0039] The detector of the system may contain or consist of an optical detector configured to detect an intensity of electromagnetic radiation of a wavelength in the range of 400 to 800 nm, wherein the optical detector is preferably configured to detect an intensity of at least one optical emission line from aluminum atoms and / or nitrogen-containing atoms and / or molecules.

[0040] Furthermore, the detector of the system may contain or consist of a mass spectrometer configured to detect a concentration of aluminum atoms and / or nitrogen-containing atoms and / or molecules.

[0041] Furthermore, the detector of the system can include or consist of a detector for measuring the electrical impedance of a magnetron discharge. The magnetron sputtering system of the system can also include an additional gas source containing a hydrogen-containing gas, wherein the control unit is preferably configured to cause the additional gas source to supply hydrogen-containing gas to the vacuum chamber after a vacuum has been established in the vacuum chamber. The hydrogen-containing gas is preferably selected from the group consisting of hydrogen, ammonia, hydrogen-oxygen mixtures, and combinations thereof.

[0042] For the deposition of an aluminum-polar AIN layer on the Si(III) foreign substrate, the system can have the following features: The magnetron atomization system contains a magnetron designed as a double-ring magnetron; the control unit is configured to cause the vacuum pump to create a vacuum in the vacuum chamber before performing a reactive deposition, the final pressure of which is in the range of < 1 10 -6The substrate of the magnetron sputtering system is a substrate containing or consisting of Si(III), and the control unit is configured to temper the Si(III) substrate to a temperature of <800 °C and to set a reactive operating point. For this purpose, the control unit is preferably configured to apply a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, to an external target of the double-ring magnetron in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47.ii) to regulate the level of the resulting pulsed electrical voltage (controlled variable) in the range of <280 V, preferably in the range of 230 to 270 V, particularly preferably in the range of 240 V to 260 V, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable); or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, to regulate the level of the resulting pulsed electrical voltage (controlled variable) in the range of 130 V to 190 V, preferably in the range of 140 to 180 V, particularly preferably in the range of 150 V to 170 V.

[0043] For the deposition of a nitrogen-polar AIN layer on the Si(III) foreign substrate, the system can have the following features: The magnetron atomization system contains a magnetron designed as a double-ring magnetron; the control unit is configured to cause the vacuum pump to create a vacuum in the vacuum chamber before performing a reactive deposition, the final pressure of which is in the range of < 1 10 -6The substrate of the magnetron sputtering system is a substrate containing or consisting of Si(III), and the control unit is configured to temper the Si(III) substrate to a temperature of <800 °C and to set a metallic operating point. The control unit is preferably configured to apply a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, to an external target of the double-ring magnetron in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47.ii) to regulate the level of the resulting pulsed electrical voltage (controlled variable) in the range of >280 V, preferably in the range of 290 to 350 V, particularly preferably in the range of 300 V to 340 V, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable); or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), to regulate the level of the resulting pulsed electrical voltage (controlled variable) in the range of 140 V to 200 V, preferably in the range of 150 to 190 V, particularly preferably in the range of 160 V to 180 V.to regulate. For the deposition of an aluminum-polar AIN layer on a sapphire (OOOl) foreign substrate, the system can have the following features: The magnetron atomization system contains a magnetron designed as a double-ring magnetron; the control unit is configured to cause the vacuum pump to establish a vacuum in the vacuum chamber before performing a reactive deposition, the final pressure of which is in the range of < 1 10, -6The substrate of the magnetron sputtering system is a substrate containing or consisting of sapphire(0001) and the control unit is configured to temper the sapphire(0001) substrate to a temperature of <700 °C and to set a metallic operating point. The control unit is preferably configured to apply a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, to an external target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured, based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47.by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) to regulate the level of the resulting pulsed electrical voltage (controlled variable) in the range of >240 V, preferably in the range of 250 to 330 V, particularly preferably in the range of 260 V to 280 V; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably configured, based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) to a level of the resulting pulsed electrical voltage (controlled variable) in the range of >400 V, preferably in the range of 405 V to 450 V,particularly preferably in the range of 410 V to 430 V, to regulate. For the deposition of a nitrogen-polar AIN layer on a sapphire (OOOl) foreign substrate, the system can have the following features: The magnetron atomization system contains a magnetron designed as a double-ring magnetron; the control unit is configured to cause the vacuum pump to establish a vacuum in the vacuum chamber before performing a reactive deposition, the final pressure of which is in the range of < 1 10, -6The substrate of the magnetron sputtering system is a substrate containing or consisting of sapphire(0001) and the control unit is configured to temper the sapphire(0001) substrate to a temperature of <700 °C and to set a reactive operating point. For this purpose, the control unit is preferably configured to set a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, on an external target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured, based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47.by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) to regulate the level of the resulting pulsed electrical voltage (controlled variable) in the range of <240 V, preferably in the range of 180 to 230 V, particularly preferably in the range of 200 V to 220 V; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably configured, based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable) to a level of the resulting pulsed electrical voltage (controlled variable) in the range of <400 V, preferably in the range of 240 to 395 V,The system is particularly preferably regulated in the range of 260 V to 390 V. The system according to the invention can be configured to carry out the method according to the invention. In particular, the control unit of the system can be configured to initiate the execution of steps of the method according to the invention.

[0044] The following example is intended to explain the subject matter of the invention in more detail, without limiting it to the specific embodiments presented here.

[0045] Example - Implementation of the regulation in the inventive method

[0046] The following table illustrates how the applied pulsed electrical voltage, the duty cycle, and / or the inflow of nitrogenous gas from the gas source into the vacuum chamber can be regulated based on the concentration of aluminum and nitrogen atoms in the vacuum chamber determined by the detector, in order to set a metallic operating point or a reactive operating point. In each case, the operating pressure is kept constant.

[0047] Table

[0048] Impedance: (electrical voltage) 2 / electrical power (U 2 / P)

[0049] Nitrogen flow: Height of an inflow of nitrogen-containing gas from the gas source into the vacuum chamber. In examples #1 to #2, the electrical power and the duty cycle are kept constant, and by setting a height of an inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), a height of the resulting pulsed electrical voltage (controlled variable in #1), or a height of the optical plasma emission (controlled variable in #2), based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, is regulated in such a way that a metallic operating point or a reactive operating point is set.

[0050] In example #3, the electrical voltage and duty cycle are kept constant, and by adjusting the level of inflow of nitrogen-containing gas from the gas source into the vacuum chamber (manipulated variable), the level of electrical power (controlled variable) is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0051] In example #4, the electrical power and nitrogen flux are kept constant, and by setting a duty cycle (manipulated variable), the level of optical plasma emission (controlled variable) is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0052] In examples #5 and #6, the duty cycle and the amount of nitrogen-containing gas flowing from the gas source into the vacuum chamber are kept constant, and by setting an electrical power (manipulated variable) an amount of optical plasma emission (controlled variable in #5), or an impedance (controlled variable in #6), is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

[0053] In example #7, the duty cycle and the amount of nitrogen-containing gas flowing from the gas source into the vacuum chamber are kept constant, and by setting an electrical voltage (manipulated variable) an impedance level (controlled variable) is regulated based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point or a reactive operating point is set.

Claims

Fraunhofer Society...eV P149487PC00 Patent claims 1. A method for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate, comprising or consisting of the following steps: a) providing a magnetron sputtering apparatus comprising a vacuum chamber, a vacuum pump, a gas source containing a noble gas and a nitrogen-containing a) a magnetron equipped with a target consisting of a target material selected from the group consisting of aluminum and aluminum alloys; a voltage source suitable for delivering a pulsed voltage; a substrate, wherein a surface of the substrate facing the magnetron has a material that does not contain or consist of a target material; a temperature control device for temperature control of the substrate; and a detector for determining a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber; b) temperature control of the substrate to a temperature of < 800 °C via the temperature control device; c) application of a pulsed voltage with a duty cycle in the range of <1 between the magnetron and the substrate via the voltage source; and d) Regulating the level of the applied pulsed electrical voltage, the level of the duty cycle and / or the level of the inflow of nitrogenous gas from the gas source into the vacuum chamber, based on a concentration of aluminium atoms and nitrogen atoms in the vacuum chamber determined by the detector, such that a metallic operating point is set or a reactive operating point is set.

2. Method according to the preceding claim, characterized in that in step a) a magnetron sputtering system is provided which i) includes a vacuum pump with which a vacuum is produced in the vacuum chamber prior to carrying out a reactive deposition, the final pressure of which is in the range of < 1-10' 6Pa; and / or ii) is configured, preferably controlled via a control unit of the magnetron atomization system, to supply the noble gas and the nitrogen-containing gas to the vacuum chamber from the gas source after a vacuum has been established in the vacuum chamber, particularly preferably in a volume ratio of nitrogen-containing gas to noble gas in the range of 0.2 to 0.4, particularly 0.3, optionally up to a working pressure in the range of 0.1 to 1 Pa; and / or iii) includes a gas source containing a nitrogen-containing gas and argon; and / or iv) includes a magnetron configured as a double-ring magnetron with at least one target, wherein the target consists of a target material selected from the group consisting of aluminum and aluminum alloy;and / or v) includes an electrical voltage source suitable for delivering a pulsed electrical voltage in the range of 100 to 400 volts, wherein the suitability for delivering a pulsed; electrical voltage, in particular a suitability for delivering a time average of a pulsed voltage over a pulse-on time and a pulse-off time, wherein the electrical voltage source is preferably suitable for delivering the pulsed electrical voltage in unipolar mode and / or bipolar pulse mode; and / or vi) contains a substrate that contains or consists of Si(11) or Sapphire(0 ...

3. A method according to any one of the preceding claims, characterized in that the detector of the magnetron sputtering system provided in step a) includes or comprises i) an optical detector configured to detect an intensity of electromagnetic radiation of a wavelength in the range of 400 to 800 nm, wherein the optical detector is preferably configured to detect an intensity of at least one optical emission line of aluminum atoms and / or nitrogen-containing atoms and / or molecules; and / or ii) includes or comprises a mass spectrometer configured to detect a concentration of aluminum atoms and / or nitrogen-containing molecules; and / or iii) includes or comprises a detector for detecting an electrical impedance of a magnetron discharge.

4. Method according to one of the preceding claims, characterized in that the magnetron atomizing system further comprises a gas source containing a hydrogen-containing gas, wherein hydrogen-containing gas is supplied to the vacuum chamber after a vacuum has been established in the vacuum chamber, wherein the hydrogen-containing gas is preferably selected from the group consisting of hydrogen, ammonia, hydrogen-oxygen mixture and combinations thereof.

5. Method according to one of the preceding claims, characterized in that the magnetron sputtering system includes a magnetron designed as a double-ring magnetron, a vacuum is produced in the vacuum chamber by the vacuum pump before carrying out a reactive deposition, the final pressure of which is in the range of < 1-10' 6Pa, the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of Si(III) cider, and the Si(III) substrate is tempered to a temperature of <800 °C in step b), wherein a reactive operating point is set in step d), wherein for this purpose, preferably in step c), a pulsed electrical power of 3 kW to 5 kW, more preferably 4 kW, is set on an external target of the double-ring magnetron in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, more preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.5, more preferably in the range of 0.44 to 0.48, more preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage is regulated in the range of <280 V, preferably in the range of 230 to 270 V, particularly preferably in the range of 240 V to 260 V; or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage is regulated in the range of 130 V to 190 V, preferably in the range of 140 to 180 V, particularly preferably in the range of 150 V to 170 V.

6. Method according to any one of claims 1 to 4, characterized in that the magnetron sputtering system includes a magnetron, which is designed as a double-ring magnetron, a vacuum is created in the vacuum chamber with the vacuum pump before performing a reactive deposition, the final pressure of which is in the range of < 1-10' 6Pa, the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of Si(III) and the Si(III) substrate is tempered to a temperature of <800 °C in step b), wherein a metallic operating point is set in step d), wherein for this purpose, preferably in step c), a pulsed electrical power of 3 kW to 5 kW, more preferably 4 kW, is set on an external target of the double-ring magnetron in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, more preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, more preferably in the range of 0.44 to 0.48, more preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage is regulated in the range of >280 V, preferably in the range of 290 to 350 V, particularly preferably in the range of 300 V to 340 V; or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage is regulated in the range of 140 V to 200 V, preferably in the range of 150 to 190 V, particularly preferably in the range of 160 V to 180 V.

7. Method according to one of claims 1 to 4, characterized in that the magnetron sputtering system includes a magnetron designed as a double-ring magnetron, with the vacuum pump creating a vacuum before performing a reactive deposition the vacuum chamber is produced, the final pressure of which is in the range of < 1-10' 6Pa, the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of sapphire(0001) and the sapphire(0001) substrate is tempered to a temperature of <700 °C in step b), wherein a metallic operating point is set in step d), wherein for this purpose, preferably in step c), a pulsed electrical power of 3 kW to 5 kW, more preferably 4 kW, is set on an external target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, more preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, more preferably in the range of 0.44 to 0.48, more preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage in the range of >240 V, preferably in the range of 250 to 330 V, particularly preferably in the range of 260 V to 280 V, is regulated; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber and the level of the resulting pulsed electrical voltage in the range of >400 V, preferably in the range of 405 V to 450 V, particularly preferably in the range of 410 V to 430 V,is regulated.

8. Method according to one of claims 1 to 4, characterized in that the magnetron sputtering system includes a magnetron, which is designed as a double-ring magnetron, a vacuum is created in the vacuum chamber with the vacuum pump before performing a reactive deposition, the final pressure of which is in the range of < 1-10' 6Pa, the substrate of the magnetron sputtering system provided in step a) is a substrate containing or consisting of sapphire(0001) and the sapphire(0001) substrate is tempered to a temperature of <700 °C in step b), wherein a reactive operating point is set in step d), wherein for this purpose, preferably in step c), a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, is set on an external target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage is regulated in the range of <240 V, preferably in the range of 180 to 230 V, particularly preferably in the range of 200 V to 220 V; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably in step d), based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber to a level of the resulting pulsed electrical voltage in the range of <400 V, preferably in the range of 240 to 395 V, particularly preferably in the range of 260 V to 390 V,is regulated.

9. Plant for the reactive deposition of crystalline, aluminum-polar or nitrogen-polar layers containing or consisting of AIN onto a foreign substrate, containing or consisting of a) a magnetron sputtering plant, containing a vacuum chamber, a vacuum pump, a gas source containing a noble gas and a nitrogen-containing a) a gas containing or consisting of N2 and / or a gas containing nitrogen atoms, a magnetron equipped with a target consisting of a target material selected from the group consisting of aluminum and aluminum alloys, an electrical voltage source suitable for delivering a pulsed electrical voltage, a substrate wherein a surface of the substrate facing the magnetron has a material that does not contain or consist of a target material, a temperature control device for temperature control of the substrate, and a detector for determining a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber; and b) a control unit;wherein the control unit is configured to cause the temperature control device to temper the substrate to a temperature of < 800 °C, wherein the control unit is configured to cause the electrical voltage source to apply a pulsed electrical voltage with a duty cycle in the range of <1 between the magnetron and the substrate, and wherein the control unit is configured to determine the magnitude of the applied pulsed electrical voltage, the magnitude of the duty cycle and / or; to regulate the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber based on a concentration of aluminum atoms and / or nitrogen atoms in the vacuum chamber determined by the detector, in such a way that a metallic operating point or a reactive operating point is set.

10. System according to claim 9, characterized in that the system includes a magnetron sputtering system which includes i) a vacuum pump which is caused by a configuration of the control unit to produce a vacuum in the vacuum chamber prior to carrying out a reactive deposition, the ultimate pressure of which is in the range of < 1 10 -6Pa; and / or ii) is configured, preferably controlled via a control unit of the magnetron atomization system, to supply the noble gas and the nitrogen-containing gas to the vacuum chamber from the gas source after a vacuum has been established in the vacuum chamber, particularly preferably in a volume ratio of nitrogen-containing gas to noble gas in the range of 0.2 to 0.4, particularly 0.3, optionally up to a working pressure in the range of 0.1 to 1 Pa; and / or iii) includes a gas source containing a nitrogen-containing gas and argon; and / or iv) includes a magnetron configured as a double-ring magnetron with at least one target, wherein the target consists of a target material selected from the group consisting of aluminum and aluminum alloy;and / or vii) includes an electrical voltage source suitable for delivering a pulsed electrical voltage in the range of 100 to 400 volts, wherein the suitability for delivering a pulsed electrical voltage is understood in particular to mean the suitability for delivering a time-averaged value of a pulsed voltage over a pulse-on time and a pulse-off time, wherein the; an electrical voltage source preferably suitable for delivering the pulsed electrical voltage in unipolar mode and / or bipolar pulse mode; and / or v) contains a substrate that contains or consists of Si(111) or Sapphire(0000).

11. System according to one of claims 9 or 10, characterized in that the detector i) includes or consists of an optical detector configured to detect an intensity of electromagnetic radiation of a wavelength in the range of 400 to 800 nm, wherein the optical detector is preferably configured to detect an intensity of at least one optical emission line of aluminum atoms and / or nitrogen-containing atoms and / or molecules; and / or ii) includes or consists of a mass spectrometer configured to detect a concentration of aluminum atoms and / or nitrogen-containing atoms and / or molecules; and / or iii) includes or consists of a detector for detecting an electrical impedance of a magnetron discharge.

12. System according to one of claims 9 to 11, characterized in that the magnetron atomizing system further comprises a further gas source containing a hydrogen-containing gas, wherein the control unit is preferably configured to cause the further gas source to supply hydrogen-containing gas to the vacuum chamber after a vacuum has been established in the vacuum chamber, wherein the hydrogen-containing gas is preferably selected from the group consisting of hydrogen, ammonia, hydrogen-oxygen mixture and combinations thereof.

13. Plant according to one of claims 9 to 12, characterized in that the magnetron sputtering plant contains a magnetron which is designed as a double-ring magnetron, the control unit is configured to cause the vacuum pump to create a vacuum in the vacuum chamber before performing a reactive deposition, the ultimate pressure of which is in the range of < 1 10 -6Pa, the substrate of the magnetron sputtering system is a substrate containing or consisting of Si(III), and the control unit is configured to cause the Si(III) substrate to be tempered to a temperature of <800 °C and to set a reactive operating point, wherein for this purpose the control unit is preferably configured to cause a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, to be applied to an external target of the double-ring magnetron in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,ii) to regulate the resulting pulsed electrical voltage in the range of <280 V, preferably in the range of 230 to 270 V, particularly preferably in the range of 240 V to 260 V, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber; or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, to regulate the resulting pulsed electrical voltage in the range of 130 V to 190 V, preferably in the range of 140 to 180 V, particularly preferably in the range of 150 V to 170 V, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber.

14. Plant according to one of claims 9 to 12, characterized in that the magnetron sputtering plant contains a magnetron which is designed as a double-ring magnetron, the control unit is configured to cause the vacuum pump to create a vacuum in the vacuum chamber before performing a reactive deposition, the ultimate pressure of which is in the range of < 1 10 -6Pa, the substrate of the magnetron sputtering system is a substrate containing or consisting of Si(III), and the control unit is configured to temper the Si(III) substrate to a temperature of <800 °C and to set a metallic operating point, wherein the control unit is preferably configured to set a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, on an external target of the double-ring magnetron in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, i) at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,ii) to regulate the level of the resulting pulsed electrical voltage in the range of >280 V, preferably in the range of 290 to 350 V, particularly preferably in the range of 300 V to 340 V, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber; or ii) at a duty cycle in the range of 0.20 to 0.28, preferably in the range of 0.22 to 0.26, particularly preferably in the range of 0.23 to 0.25, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber and the level of the resulting pulsed electrical voltage in the range of 140 V to 200 V, preferably in the range of 150 to 190 V, particularly preferably in the range of 160 V to 180 V.

15. Plant according to one of claims 9 to 12, characterized in that the magnetron sputtering plant contains a magnetron which is designed as a double-ring magnetron, the control unit is configured to cause the vacuum pump to create a vacuum in the vacuum chamber before performing a reactive deposition, the ultimate pressure of which is in the range of < 1 10 -6Pa, the substrate of the magnetron sputtering system is a substrate containing or consisting of sapphire(0001) and the control unit is configured to temper the sapphire(0001) substrate to a temperature of <700 °C and to set a metallic operating point, wherein the control unit is preferably configured to set a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, on an external target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber, the level of the resulting pulsed electrical voltage in the range of >240 V, preferably in the range of 250 to 330 V, particularly preferably in the range of 260 V to 280 V, can be regulated; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, to regulate the resulting pulsed electrical voltage in the range of >400 V, preferably in the range of 405 V to 450 V, particularly preferably in the range of 410 V to 430 V, by adjusting the level of an inflow of the nitrogen-containing gas from the gas source into the vacuum chamber.

16. Plant according to one of claims 9 to 12, characterized in that the magnetron sputtering plant includes a magnetron designed as a double-ring magnetron, the control unit is configured to cause the vacuum pump to produce a vacuum in the vacuum chamber before carrying out a reactive deposition, the final pressure of which is in the range of < 1 10 -6Pa, the substrate of the magnetron sputtering system is a substrate containing or consisting of sapphire(0001) and the control unit is configured to temper the sapphire(0001) substrate to a temperature of <700 °C and to set a reactive operating point, wherein the control unit is preferably configured to set a pulsed electrical power of 3 kW to 5 kW, preferably 4 kW, on an external target of the double-ring magnetron i) in unipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and is particularly preferably configured based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.42 to 0.50, preferably in the range of 0.44 to 0.48, particularly preferably in the range of 0.45 to 0.47,by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber to regulate the level of the resulting pulsed electrical voltage in the range of <240 V, preferably in the range of 180 to 230 V, particularly preferably in the range of 200 V to 220 V; or ii) in bipolar mode between the magnetron and the substrate at an operating pressure of 0.4 Pa to 0.6 Pa, preferably 0.5 Pa, and particularly preferably configured based on a concentration of aluminum atoms and nitrogen atoms in the vacuum chamber determined by the detector, at a duty cycle in the range of 0.55 to 0.65, preferably in the range of 0.58 to 0.62, by adjusting the level of the inflow of nitrogen-containing gas from the gas source into the vacuum chamber to regulate the level of the resulting pulsed electrical voltage in the range of to regulate the voltage below 400 V, preferably in the range of 240 to 395 V, particularly preferably in the range of 260 V to 390 V.

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