Laser bank comprising a laser array comprising combination of edge-emitting and top-emitting semiconductor laser structures
The combination of top-emitting and side-emitting semiconductor laser structures with a deflection arrangement addresses thermal inefficiencies and wavelength limitations in light generating systems, enabling efficient high-intensity light generation for various applications.
WO2026125191A1 Publication Date: 2026-06-18SIGNIFY HOLDING BV
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- SIGNIFY HOLDING BV
- Filing Date
- 2025-12-05
- Publication Date
- 2026-06-18
AI Technical Summary
⚠Technical Problem
Existing light generating systems, such as laser systems, do not efficiently provide different wavelength light and may suffer from thermal inefficiencies.
⚗Method used
A light generating system comprising a combination of top-emitting and side-emitting semiconductor laser structures, where the optical axes of the devices are non-parallel upon escape and are made parallel using a deflection arrangement, allowing for high-intensity light generation with controlled spectral power distribution and improved thermal management.
🎯Benefits of technology
Enables efficient generation of high-intensity light with different wavelengths and improved thermal performance, suitable for applications like automotive headlights, stage-lighting, and projectors.
✦ Generated by Eureka AI based on patent content.
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Abstract
The invention provides a light generating system (1000) comprising a lighting arrangement (2000); wherein: (A) the lighting arrangement (2000) comprises an array (2100) of semiconductor-based light generating devices (100) and a deflection arrangement (2400); (B) the array (2100) of semiconductor-based light generating devices (100) comprises a first light generating device (110) and a second light generating device (120); wherein the semiconductor-based light generating devices (100) are selected from the group of laser diodes, superluminescent diodes, and multi-junction diodes; (C) the first light generating device (110) is a top-emitting light generating device; wherein the first light generating device (110) is configured to generate first device light (111) having a first optical axis (O1) and having a first centroid wavelength λc1; the second light generating device (120) is a side- emitting light generating device; wherein the second light generating device (120) is configured to generate second device light (121) having a second optical axis (O2) and having a second centroid wavelength λc2; (D) the first light generating device (110) and the second light generating device (120) are configured such that the optical axes (O1,O2) of the first and second device light (111,121) upon escape from the light generating devices (110,120) are non-parallel; and wherein |λc2-λc1|≥10 nm; (E) the lighting arrangement (2000) is configured to generate arrangement light (2001) comprising one or more of the first device light (111) and second device light (121); and (F) the deflection arrangement (2400) is configured downstream of one or more of the first light generating device (110) and the second light generating device (120); wherein the deflection arrangement (2400), the first light generating device (110) and the second light generating device (120) are configured such that the optical axes (O1,O2) of the first device light (111) and second device light (121), upon escape from the lighting arrangement (2000), are parallel.
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