Laser bank comprising a laser array comprising combination of edge-emitting and top-emitting semiconductor laser structures

Abstract

The invention provides a light generating system (1000) comprising a lighting arrangement (2000); wherein: (A) the lighting arrangement (2000) comprises an array (2100) of semiconductor-based light generating devices (100) and a deflection arrangement (2400); (B) the array (2100) of semiconductor-based light generating devices (100) comprises a first light generating device (110) and a second light generating device (120); wherein the semiconductor-based light generating devices (100) are selected from the group of laser diodes, superluminescent diodes, and multi-junction diodes; (C) the first light generating device (110) is a top-emitting light generating device; wherein the first light generating device (110) is configured to generate first device light (111) having a first optical axis (O1) and having a first centroid wavelength λc1; the second light generating device (120) is a side- emitting light generating device; wherein the second light generating device (120) is configured to generate second device light (121) having a second optical axis (O2) and having a second centroid wavelength λc2; (D) the first light generating device (110) and the second light generating device (120) are configured such that the optical axes (O1,O2) of the first and second device light (111,121) upon escape from the light generating devices (110,120) are non-parallel; and wherein |λc2-λc1|≥10 nm; (E) the lighting arrangement (2000) is configured to generate arrangement light (2001) comprising one or more of the first device light (111) and second device light (121); and (F) the deflection arrangement (2400) is configured downstream of one or more of the first light generating device (110) and the second light generating device (120); wherein the deflection arrangement (2400), the first light generating device (110) and the second light generating device (120) are configured such that the optical axes (O1,O2) of the first device light (111) and second device light (121), upon escape from the lighting arrangement (2000), are parallel.

Description

[0001] 2024PF80286

[0002] 1

[0003] Laser bank comprising a laser array comprising combination of edge-emitting and topemitting semiconductor laser structures

[0004] FIELD OF THE INVENTION

[0005] The invention relates to a light generating system and to a lighting device comprising such light generating device.

[0006] BACKGROUND OF THE INVENTION

[0007] Laser diode assemblies are known in the art. US2024 / 0097407, for instance, describes a laser diode arrangement for a laser projection device, comprising a carrier; a laser diode array arranged on the carrier, comprising a first light group having a plurality of first laser diodes and a second light group having a plurality of second laser diodes, said first light emitting group emitting polarized electromagnetic radiation having a first polarization direction and said second light emitting group emitting polarized electromagnetic radiation having a second polarization direction, said first polarization direction and said second polarization direction being perpendicular to each other, the invention being characterized in that said first light emitting group comprises at least one first laser housing accommodating at least one first laser diode and said second light emitting group comprises at least one second laser housing accommodating at least one second laser diode; and the number of first laser diodes of the laser diode array is at least twice the number of second laser diodes, the first laser diodes and the second laser diodes having a corresponding maximum optical output power; and an electrical wiring for the laser diode array is applied on the carrier such that the current intensity at the first laser diodes is adjustable continuously and independently of the energization of the second laser diodes.

[0008] SUMMARY OF THE INVENTION

[0009] There is a desire to optimize light generating systems like laser systems, or like laser bank comprising systems. Prior art, systems, however, may not provide optimized systems, or may not allow providing different wavelength light in efficient ways, such as e.g. from a thermal point of view. Hence, it is an aspect of the invention to provide an alternative light generating system, which preferably further at least partly obviates one or more of 2024PF80286

[0010] 2 above-described drawbacks. The present invention may have as object to overcome or ameliorate at least one of the disadvantages of the prior art, or to provide a useful alternative.

[0011] According to a first aspect, the invention provides a light generating system (“system”) comprising a lighting arrangement (“arrangement”). Especially, the lighting arrangement may comprise an array of semiconductor-based light generating devices and a deflection arrangement. In embodiments, the array of semiconductor-based light generating devices may comprise a first light generating device and a second light generating device. Further, in embodiments the semiconductor-based light generating device may be selected from the group of laser diodes, superluminescent diodes, and multi -junction diodes. In embodiments, the first light generating device may be a top-emitting light generating device. Especially, the first light generating device may be configured to generate first device light having a first optical axis (01) and having a first centroid wavelength kc l . Further, in embodiments the second light generating device may be a side-emitting light generating device. Especially, the second light generating device may be configured to generate second device light having a second optical axis (02) and having a second centroid wavelength Zc2. In embodiments, the first light generating device and the second light generating device may be configured such that the optical axes (01,02) of the first and second device light (111,121) upon escape from the light generating devices (110,120) may be non-parallel. Further, in specific embodiments |Ac2-kc l |>10 nm. Further, in embodiments the lighting arrangement may be configured to generate arrangement light (during operation of the lighting arrangement) comprising one or more of the first device light and second device light. Yet, in embodiments the deflection arrangement may be configured downstream of one or more of the first light generating device and the second light generating device. Further, in embodiments the deflection arrangement, the first light generating device and the second light generating device may be configured such that the optical axes (01,02) of the first device light and second device light, upon escape from the lighting arrangement (via the deflection arrangement for one or more of the first device light and the second device light), may be parallel. Hence, in embodiments the invention provides a light generating system comprising a lighting arrangement; wherein: (A) the lighting arrangement comprises an array of semiconductor-based light generating devices and a deflection arrangement; (B) the array of semiconductor-based light generating devices comprises a first light generating device and a second light generating device; wherein the semiconductor-based light generating devices are selected from the group of laser diodes, superluminescent diodes, and multi -junction diodes; (C) the first light generating device is a top-emitting light generating device; wherein 2024PF80286

[0012] 3 the first light generating device is configured to generate first device light having a first optical axis (01) and having a first centroid wavelength Xcl; the second light generating device is a side-emitting light generating device; wherein the second light generating device is configured to generate second device light having a second optical axis (02) and having a second centroid wavelength Xc2; (D) the first light generating device and the second light generating device are configured such that the optical axes (01,02) of the first and second device light (111, 121) upon escape from the light generating devices (110,120) are nonparallel; and wherein |Xc2-Xcl |>10 nm; (E) the lighting arrangement is configured to generate arrangement light (during operation of the lighting arrangement) comprising one or more of the first device light and second device light; and (F) the deflection arrangement is configured downstream of one or more of the first light generating device and the second light generating device; wherein the deflection arrangement, the first light generating device and the second light generating device are configured such that the optical axes (01,02) of the first device light and second device light, upon escape from the lighting arrangement (via the deflection arrangement for one or more of the first device light and the second device light), are parallel.

[0013] With such light generating system, it may be possible to generate in a relatively efficient way high intensity light with different wavelengths. Further, it may be possible to control the spectral power distribution of the system light (generated by the system). Further, the present invention may provide a thermal improvement. For instance, a VCSEL may be best cooled via its bottom, whereas other laser diodes (e.g. Fabry-Perot) may be better cooled from one or more of its sides. With the present invention, high intensity systems for e.g. automotive headlights, stage-lighting, or projectors may be provided.

[0014] As indicated above, the light generating system may especially comprise a lighting arrangement. The term “arrangement” may especially refer to a configuration of elements, e.g. on a support and / or having fixed distances, as known to a person skilled in the art. Especially, in embodiments the lighting arrangement may comprise (i) an array of semiconductor-based light generating devices and (ii) a deflection arrangement. Here below, some embodiments are described.

[0015] The array may be regular, random, or quasi random. Especially, in embodiments the array may be a regular 2D array. However, other arrays, like a phyllotaxis tessellation or a sunflower tessellation, may also be possible. The term “tessellation” may herein especially refer to a pattern of (repeated) shapes, especially polygons, which fit together closely without gaps or overlapping. 2024PF80286

[0016] 4

[0017] Especially, the array may be a regular array. A regular array of elements may have fixed (heart-to-heart) distances in a first direction and also fixed (heart-to-heart) distances in a second direction. In a square type packing, the distances in the two directions may be identical. In a hexagonal type packing, this may also be the case when the directions have a mutual angle of 60°. In embodiments, the array is an N*M array, wherein N and M are each individually selected from the range of at least 2. In specific embodiments, N and M are each individually selected from the range of at least 3. Hence, in embodiments there may be one or two constant pitches. Hence, in embodiments the array of semiconductor-based light generating devices may comprise NxM semiconductor-based light generating devices, wherein N>2 and wherein M>2. In specific embodiments at least one of N and M is at least 3, such as in embodiments N>3 and wherein M>3. For instance, in embodiments N may be at 4 and / or M may be at least 4. Note that in a first direction all first light generating devices and second light generating devices along a (first) line may add up to N, and in a second direction all first light generating devices and second light generating devices along a (second) line may add up to M. Further, in embodiments N<1000 and / or M<1000, though neither of these conditions may necessarily apply. In specific embodiments N is selected from the range of 4- 100 and / or M is selected from the range of 4-100.

[0018] In embodiments, the array of semiconductor-based light generating devices may comprise a first light generating device and a second light generating device. Here below, some embodiments in relation to light generating devices in general are described. Hence, the below embodiments may (individually) apply to the first light generating device and / or second light generating device.

[0019] A light generating device may especially be configured to generate device light. Especially, the light generating device may comprise a light source. The light source may especially be configured to generate light source light. In embodiments, the device light may essentially consist of the light source light. In other embodiments, the device light may essentially consist of converted light source light. In yet other embodiments, the device light may comprise (unconverted) light source light and converted light source light. Light source light may be converted with a luminescent material into luminescent material light and / or with an upconverter into upconverted light (see also below). The term “light generating device” may also refer to a plurality of light generating devices which may provide device light having essentially the same spectral power distributions. In (other) specific embodiments, the term “light generating device” may also refer to a plurality of light 2024PF80286

[0020] 5 generating devices which may provide device light having different spectral power distributions.

[0021] The term “light source” may in principle relate to any light source known in the art. It may be a conventional (tungsten) light bulb, a low pressure mercury lamp, a high pressure mercury lamp, a fluorescent lamp, an LED (light emitting diode). In a specific embodiment, the light source comprises a solid state light source (such as an LED or laser diode (or “diode laser”)). The term “light source” may also relate to a plurality of light sources, such as 2-2000 (solid state) LED light sources. Hence, the term LED may also refer to a plurality of LEDs. Further, the term “light source” may in embodiments also refer to a so-called chip-on-board (COB) light source. The term “COB” especially refers to LED chips in the form of a semiconductor chip that is neither encased nor connected but directly mounted onto a substrate, such as a PCB. Hence, a plurality of light emitting semiconductor light source may be configured on the same substrate. In embodiments, a COB is a multi LED chip configured together as a single lighting module.

[0022] The term “light source” may also refer to a chip scaled package (CSP). A CSP may comprise a single solid state die with provided thereon a luminescent material comprising layer. The term “light source” may also refer to a midpower package. A midpower package may comprise one or more solid state die(s). The die(s) may be covered by a luminescent material comprising layer. The die dimensions may be equal to or smaller than 2 mm, such as in the range of e.g. 0.2-2 mm. Hence, in embodiments the light source comprises a solid state light source. Further, in specific embodiments, the light source comprises a chip scale packaged LED. Herein, the term “light source” may also especially refer to a small solid state light source, such as having a mini size or micro size. For instance, the light sources may comprise one or more of mini LEDs and micro LEDs. Especially, in embodiment the light sources comprise micro LEDs or “microLEDs” or “pLEDs”. Herein, the term mini size or mini LED especially indicates to solid state light sources having dimensions, such as die dimension, especially length and width, selected from the range of 100 pm - 1 mm. Herein, the term p size or micro LED especially indicates to solid state light sources having dimensions, such as die dimension, especially length and width, selected from the range of 100 pm and smaller.

[0023] The light source may have a light escape surface. Referring to conventional light sources such as light bulbs or fluorescent lamps, it may be an outer surface of a glass or a quartz envelope. For LED’s it may for instance be the LED die, or when a resin is applied to the LED die, the outer surface of the resin. In principle, it may also be the terminal end of 2024PF80286

[0024] 6 a fiber. The term escape surface especially relates to that part of the light source, where the light actually leaves or escapes from the light source. The light source is configured to provide a beam of light. This beam of light (thus) escapes from the light exit surface of the light source.

[0025] Likewise, a light generating device may comprise a light escape surface, such as an end window. Further, likewise a light generating system may comprise a light escape surface, such as an end window.

[0026] The term “light source” may refer to a semiconductor light-emitting device, such as a light emitting diode (LEDs), a resonant cavity light emitting diode (RCLED), a vertical cavity laser diode (VCSELs), an edge emitting laser, etc... The term “light source” may also refer to an organic light-emitting diode (OLED), such as a passive-matrix (PMOLED) or an active-matrix (AMOLED). In a specific embodiment, the light source comprises a solid-state light source (such as an LED or laser diode). In an embodiment, the light source comprises an LED (light emitting diode). The terms “light source” or “solid state light source” may also refer to a superluminescent diode (SLED).

[0027] The term LED may also refer to a plurality of LEDs.

[0028] The term “light source” may also relate to a plurality of (essentially identical (or different)) light sources, such as 2-2000 solid state light sources. In embodiments, the light source may comprise one or more micro-optical elements (array of micro lenses) downstream of a single solid-state light source, such as an LED, or downstream of a plurality of solid-state light sources (i.e. e.g. shared by multiple LEDs). In embodiments, the light source may comprise an LED with on-chip optics. In embodiments, the light source comprises pixelated single LEDs (with or without optics) (offering in embodiments on-chip beam steering).

[0029] In embodiments, the light source may be configured to provide primary radiation, which is used as such, such as e.g. a blue light source, like a blue LED, or a green light source, such as a green LED, and a red light source, such as a red LED. Such LEDs, which may not comprise a luminescent material (“phosphor”) may be indicated as direct color LEDs.

[0030] In other embodiments, however, the light source may be configured to provide primary radiation and part of the primary radiation is converted into secondary radiation. Secondary radiation may be based on conversion by a luminescent material. The secondary radiation may therefore also be indicated as luminescent material radiation. The luminescent material may in embodiments be comprised by the light source, such as an LED with a 2024PF80286

[0031] 7 luminescent material layer or dome comprising luminescent material. Such LEDs may be indicated as phosphor converted LEDs or PC LEDs (phosphor converted LEDs). In other embodiments, the luminescent material may be configured at some distance (“remote”) from the light source, such as an LED with a luminescent material layer not in physical contact with a die of the LED. Hence, in specific embodiments the light source may be a light source that during operation emits at least light at wavelength selected from the range of 380-470 nm. However, other wavelengths may also be possible. This light may partially be converted by the luminescent material.

[0032] In embodiments, the light generating device may comprise a luminescent material. In embodiments, the light generating device may comprise a PC LED. In other embodiments, the light generating device may comprise a direct LED (i.e. no phosphor). In embodiments, the light generating device may comprise a laser device, like a laser diode. In embodiments, the light generating device may comprise a superluminescent diode. Hence, in specific embodiments, the light source may be selected from the group of laser diodes and superluminescent diodes. In other embodiments, the light source may comprise an LED.

[0033] The light source may especially be configured to generate light source light having an optical axis (O), (a beam shape,) and a spectral power distribution. The light source light may in embodiments comprise one or more bands, having band widths as known for lasers.

[0034] The term “light source” may (thus) refer to a light generating element as such, like e.g. a solid state light source, or e.g. to a package of the light generating element, such as a solid state light source, and one or more of a luminescent material comprising element and (other) optics, like a lens, a collimator. A light converter element (“converter element” or “converter”) may comprise a luminescent material comprising element. For instance, a solid state light source as such, like a blue LED, is a light source. A combination of a solid state light source (as light generating element) and a light converter element, such as a blue LED and a light converter element, optically coupled to the solid state light source, may also be a light source (but may also be indicated as light generating device). Hence, a white LED is a light source (but may e.g. also be indicated as (white) light generating device).

[0035] The term “light source” herein may also refer to a light source comprising a solid state light source, such as an LED or a laser diode or a superluminescent diode.

[0036] The term “light source” may (thus) in embodiments also refer to a light source that is (also) based on conversion of light, such as a light source in combination with a luminescent converter material. Hence, the term “light source” may also refer to a 2024PF80286

[0037] 8 combination of an LED with a luminescent material configured to convert at least part of the LED radiation, or to a combination of a (diode) laser with a luminescent material configured to convert at least part of the (diode) laser radiation.

[0038] In embodiments, the term “light source” may also refer to a combination of a light source, like an LED, and an optical filter, which may change the spectral power distribution of the light generated by the light source. Especially, the term “light generating device” may be used to address a light source and further (optical components), like an optical filter and / or a beam shaping element, etc.

[0039] The phrases “different light sources” or “a plurality of different light sources”, and similar phrases, may in embodiments refer to a plurality of solid-state light sources selected from at least two different bins. Likewise, the phrases “identical light sources” or “a plurality of same light sources”, and similar phrases, may in embodiments refer to a plurality of solid-state light sources selected from the same bin.

[0040] The term “solid state light source”, or “solid state material light source”, and similar terms, may especially refer to semiconductor light sources, such as a light emitting diode (LED), a laser diode, or a superluminescent diode.

[0041] The term “semiconductor light source” may comprise a semiconductor configured to generate light, herein also indicated a “solid state light source”. The term “solid state light source” may refer to a LED, a laser diode, a super luminescent diode, multijunction diode, VCSELs (vertical-cavity surface-emitting laser), etc. The term semiconductor light source and light generating device may herein interchangeably be used; the semiconductor light source or light generating device may comprise one or more semiconductors (configured to generate light) and optionally a luminescent material. Here below, some aspects in relation to (solid state) light sources and light generating devices are described.

[0042] Suitable LEDs may be selected from (III-V compound) semiconductors, such as in specific embodiments semiconductors selected from the group of GaN, AlGaN, InGaN, and AlGalnN, (especially for blue-green), GaP, InP, GalnP, and AlGalnP (especially for red- NIR), GaAs, AlGaAs, InGaAs, and InGaAsP (especially for NIR-MIR). Hence, in embodiments one or more of the light generating devices may comprise a semiconductor selected from the group of GaN, AlGaN, InGaN, AlGalnN, GaP, InP, GalnP, and AlGalnP.

[0043] The term “laser light source” especially refers to a laser. Such laser may especially be configured to generate laser light source light having one or more wavelengths in the UV, visible, or infrared, especially having a wavelength selected from the spectral 2024PF80286

[0044] 9 wavelength range of 200-2000 nm, such as 300-1500 nm. The term “laser” especially refers to a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation.

[0045] Especially, in embodiments the term “laser” may refer to a solid-state laser. In specific embodiments, the terms “laser” or “laser light source”, or similar terms, refer to a laser diode (or diode laser).

[0046] Hence, in embodiments the light source comprises a laser light source. In embodiments, the terms “laser” or “solid state laser” or “solid state material laser” may refer to one or more of cerium doped lithium strontium (or calcium) aluminum fluoride (Ce:LiSAF, Ce:LiCAF), chromium doped chrysoberyl (alexandrite) laser, chromium ZnSe (CrZnSe) laser, divalent samarium doped calcium fluoride (Sm:CaF2) laser, Er:YAG laser, erbium doped and erbium-ytterbium codoped glass lasers, F-Center laser, holmium YAG (Ho: YAG) laser, Nd:YAG laser, NdCrYAG laser, neodymium doped yttrium calcium oxoborate Nd:YCa4O(BO3)3 or Nd:YCOB, neodymium doped yttrium orthovanadate (Nd:YVO4) laser, neodymium glass (Nd:glass) laser, neodymium YLF (Nd:YLF) solid-state laser, promethium 147 doped phosphate glass (147Pm3+:glass) solid-state laser, ruby laser (AhO3:Cr3+), thulium YAG (Tm:YAG) laser, titanium sapphire (Ti:sapphire; AhO3:Ti3+) laser, trival ent uranium doped calcium fluoride (U:CaF2) solid-state laser, Ytterbium doped glass laser (rod, plate / chip, and fiber), Ytterbium YAG (Yb:YAG) laser, Yb2O3 (glass or ceramics) laser, etc. For instance, including second and third harmonic generation embodiments, the light source may comprise one or more of an F center laser, an yttrium orthovanadate (Nd:YVO4) laser, a promethium 147 doped phosphate glass (147Pm3+:glass), and a titanium sapphire (Ti:sapphire; AhO3:Ti3+) laser. For instance, considering second and third harmonic generation, such light sources may be used to generate blue light.

[0047] In embodiments, the terms “laser” or “solid state laser” or “solid state material laser” may refer to one or more of a semiconductor laser diodes, such as GaN, InGaN, AlGalnP, AlGaAs, InGaAsP, lead salt, vertical cavity surface emitting laser (VCSEL), quantum cascade laser, hybrid silicon laser, etc. Suitable solid state lasers may be selected from (III-V compound) semiconductor lasers, such as in specific embodiments semiconductor lasers selected from the group of GaN, AlGaN, InGaN, and AlGalnN, (especially for blue-green), GaP, InP, GalnP, and AlGalnP (especially for red-NIR), GaAs, AlGaAs, InGaAs, and InGaAsP (especially for NIR-MIR). Hence, in embodiments one or more of the light generating devices may comprise a semiconductor laser selected from the group of GaN, AlGaN, InGaN, AlGalnN, GaP, InP, GalnP, and AlGalnP lasers. 2024PF80286

[0048] 10

[0049] A laser may be combined with an upconverter in order to arrive at shorter (laser) wavelengths. For instance, with some (trivalent) rare earth ions upconversion may be obtained or with non-linear crystals upconversion can be obtained. Alternatively, a laser can be combined with a downconverter, such as a dye laser, to arrive at longer (laser) wavelengths.

[0050] As can be derived from the below, the term “laser light source” may also refer to a plurality of (different or identical) laser light sources. In specific embodiments, the term “laser light source” may refer to a plurality N of (identical) laser light sources. In embodiments, N=2, or more. In specific embodiments, N may be at least 5, such as especially at least 8. In this way, a higher brightness may be obtained. In embodiments, laser light sources may be arranged in a laser bank (see also above). The laser bank may in embodiments comprise heat sinking and / or optics e.g. a lens to collimate the laser light. Hence, in embodiments lasers in a laser bank (or “laser array bank”) may share the same optics. Herein, in embodiments the lasers in a laser bank may not fully share the same optics, as there may be different optics for the first light generating device and the second light generating device, see also below.

[0051] The laser light source is configured to generate laser light source light (or “laser light”). The light source light may essentially consist of the laser light source light. The light source light may also comprise laser light source light of two or more (different or identical) laser light sources. For instance, the laser light source light of two or more (different or identical) laser light sources may be coupled into a light guide, to provide a single beam of light comprising the laser light source light of the two or more (different or identical) laser light sources. In specific embodiments, the light source light is thus especially collimated light source light. In yet further embodiments, the light source light is especially (collimated) laser light source light.

[0052] The laser light source light may in embodiments comprise one or more bands, having band widths as known for lasers. In specific embodiments, the band(s) may be relatively sharp line(s), such as having full width half maximum (FWHM) in the range of less than 20 nm at RT, such as equal to or less than 10 nm. Hence, the light source light has a spectral power distribution (intensity on an energy scale as function of the wavelength) which may comprise one or more (narrow) bands.

[0053] The beams (of light source light) may be focused or collimated beams of (laser) light source light. The term “focused” may especially refer to converging to a small spot. This small spot may be at the discrete converter region, or (slightly) upstream thereof or 2024PF80286

[0054] 11

[0055] (slightly) downstream thereof. Especially, focusing and / or collimation may be such that the cross-sectional shape (perpendicular to the optical axis) of the beam at the discrete converter region (at the side face) is essentially not larger than the cross-section shape (perpendicular to the optical axis) of the discrete converter region (where the light source light irradiates the discrete converter region). Focusing may be executed with one or more optics, like (focusing) lenses. Especially, two lenses may be applied to focus the laser light source light. Collimation may be executed with one or more (other) optics, like collimation elements, such as lenses and / or parabolic mirrors. In embodiments, the beam of (laser) light source light may be relatively highly collimated, such as in embodiments <2° (FWHM), more especially <1° (FWHM), most especially <0.5° (FWHM). Hence, <2° (FWHM) may be considered (highly) collimated light source light. Optics may be used to provide (high) collimation (see also above).

[0056] The term “solid state material laser”, and similar terms, may refer to a solid state laser like based on a crystalline or glass body dopes with ions, like transition metal ions and / or lanthanide ions, to a fiber laser, to a photonic crystal laser, to a semiconductor laser, such as e.g. a vertical cavity surface-emitting laser (VCSEL), etc.

[0057] The term “solid state light source”, and similar terms, may especially refer to semiconductor light sources, such as a light emitting diode (LED), a laser diode, or a superluminescent diode. Instead of the term “solid state light source” also the term “semiconductor-based light source” may be applied. Hence, the term “semiconductor-based light source” may e.g. refer to one or more of a light emitting diode (LED), a laser diode, and a superluminescent diode.

[0058] Hence, the light generating device may comprise one or more of a light emitting diode (LED), a laser diode, and a superluminescent diode. Herein, in specific embodiments the semiconductor-based light generating devices may be selected from the group of laser diodes, superluminescent diodes, and multi -junction diodes. More especially, in embodiments the first light generating device and the second light generating device may (each) comprise a laser diode. Hence, the term “first light generating device” may refer to one or more (first) laser diodes (such as a laser bank comprising a plurality of (first) laser diodes) and / or the term “second light generating device” may refer to one or more (second) laser diodes (such as a laser bank comprising a plurality of (second) laser diodes).

[0059] In embodiments, the first light generating device may be a top-emitting light generating device and / or the second light generating device is a side-emitting light generating 2024PF80286

[0060] 12 device. Instead of the term “side-emitting light generating device”, also the term “edgeemitting light generating device” may be applied.

[0061] Especially, the first light generating device may be configured to generate first device light having a first optical axis (01) and having a first centroid wavelength Xcl. Further, especially the second light generating device is configured to generate second device light having a second optical axis (02) and having a second centroid wavelength Xc2.

[0062] Especially, the term “optical axis” may be defined as an imaginary line that defines the path along which light propagates through a system starting from the light generating element, here especially the respective light generating device. Especially, the optical axis may coincide with the direction of the light with the highest radiant flux.

[0063] The term “centroid wavelength”, also indicated as c, is known in the art, and refers to the wavelength value where half of the light energy is at shorter and half the energy is at longer wavelengths; the value is stated in nanometers (nm). It is the wavelength that divides the integral of a spectral power distribution into two equal parts as expressed by the formula Ac = X A* 1(A) / (S I( A)), where the summation is over the wavelength range of interest, and 1(A) is the spectral energy density (i.e. the integration of the product of the wavelength and the intensity over the emission band normalized to the integrated intensity). The centroid wavelength may e.g. be determined at operation conditions.

[0064] Especially, in embodiments the first light generating device and the second light generating device may be configured such that the optical axes (01,02) of the first and second device light upon escape from the light generating devices are non-parallel.

[0065] For instance, in embodiments they may have a mutual angle of 90°. Would both light generating devices be configured on a support, one may have an optical axis parallel to the support and another one may have an optical axis perpendicular to the support. However, neither the mutual angle is necessarily 90°, nor is one of the optical axis parallel or perpendicular to the support. Nevertheless, in specific embodiments the light generating system may further comprise a support, configured to support the first light generating device and the second light generating device (and optionally the deflection arrangement, see further also below, wherein the support has a support cross-sectional plane (P), wherein the first optical axis (01), upon escape of the first device light from the first light generating device, may be configured perpendicular to the support cross-sectional plane (P), and wherein the second optical axis (02), upon escape of the second device light from the second light generating device, may be configured parallel to the support cross-sectional plane (P). In 2024PF80286

[0066] 13 specific embodiments, the support may (thus)(also) be configured to support the deflection arrangement.

[0067] In embodiments, the support may be thermally conductive and / or may be in thermal contact with a thermally conductive body. Hence, the support may comprise thermally conductive material and / or may be in thermal contact with a thermally conductive material.

[0068] An element may be considered in “thermal contact” with another element if it can exchange energy through the process of heat. Hence, the elements may be thermally coupled. In embodiments, thermal contact can be achieved by physical contact. In embodiments, thermal contact may be achieved via a thermally conductive material, such as a thermally conductive glue (or thermally conductive adhesive). Thermal contact may also be achieved between two elements when the two elements are arranged relative to each other at a distance of equal to or less than about 10 pm, though larger distances, such as up to 100 pm may be possible. The shorter the distance, the better the thermal contact. Especially, the distance is 10 pm or less, such as 5 pm or less, such as 1 pm or less. The distance may be the distanced between two respective surfaces of the respective elements. The distance may be an average distance. For instance, the two elements may be in physical contact at one or more, such as a plurality of positions, but at one or more, especially a plurality of other positions, the elements are not in physical contact. For instance, this may be the case when one or both elements have a rough surface. Hence, in embodiments in average the distance between the two elements may be 10 pm or less (though larger average distances may be possible, such as up to 100 pm). In embodiments, the two surfaces of the two elements may be kept at a distance with one or more distance holders. When two elements are in thermal contact, they may be in physical contact or may be configured at a short distance of each other, like at maximum 10 pm, such as at maximum 1 mm. When the two elements are configured at a distance from each other, an intermediate material may be configured in between, though in other embodiments, the distance between the two elements may filled with a gas, liquid, or may be vacuum. When an intermediate material is available, the larger the distance, the higher the thermal conductivity may be useful for thermal contact between the two elements. However, the smaller the distance, the lower the thermal conductivity of the intermediate material may be (of course, higher thermal conductive materials may also be used).

[0069] A thermally conductive element especially comprise thermally conductive material. 2024PF80286

[0070] 14

[0071] A thermally conductive material may especially have a thermal conductivity of at least about 20 W / (m*K), like at least about 30 W / (m*K), such as at least about 100 W / (m*K), like especially at least about 200 W / (m*K). In yet further specific embodiments, a thermally conductive material may especially have a thermal conductivity of at least about 10 W / (m*K). In embodiments, the thermally conductive material may comprise one or more of copper, aluminum, silver, gold, silicon carbide, aluminum nitride, boron nitride, aluminum silicon carbide, beryllium oxide, a silicon carbide composite, aluminum silicon carbide, a copper tungsten alloy, a copper molybdenum carbide, carbon, diamond, and graphite. However, in embodiments also magnesium may be applied. Alternatively, or additionally, the thermally conductive material may comprise or consist of aluminum oxide.

[0072] In embodiments, the thermally conductive element may comprise one or more of a heatsink, a heat spreader, and a two-phase cooling device. In yet other embodiments, the thermally conductive element may be configured in thermal contact with one or more of a heatsink, a heat spreader, and a two-phase cooling device, and may e.g. transfer heat to such heatsink, heat spreader, or two-phase cooling device, via another thermally conductive element.

[0073] In specific embodiments, the support may comprise a metal core printed circuit board (PCB).

[0074] In specific embodiments, the first device light and the second device light may have different spectral power distributions. For instance, in embodiments |kc2-kc l |>5 nm, more especially |Ac2-kc l |>10 nm. Yet, in specific embodiments |Ac2-kc l |>15 nm, such as |kc2-kc l |>20 nm or |kc2-kc l |>40 nm. Further, in embodiments |kc2-kc 1 |<750 nm, such as at maximum 700 nm. Yet, in (specific) embodiments |Ac2-kc l |<300 nm, such as Zc2-kcl|<200 nm.

[0075] As indicated above, in embodiments the lighting arrangement may be configured to generate arrangement light (during operation of the lighting arrangement) comprising one or more of the first device light and second device light. The arrangement light may escape from the system as such or may be subject to one or more actions, like diffusion, collimation, polarization, conversion, etc. Hence, the light generated by the system, which may be indicated as “system light” may in embodiments comprise arrangement light and may in other embodiments comprise light that is based on (at least partially) diffused, collimated, polarized, and / or converted arrangement light. Optionally, the system light may also comprise a contribution of one or more other types of light generating devices, see also below. 2024PF80286

[0076] 15

[0077] As the optical axes of the first device light and second device light are not parallel, and as it may be desirable to have these parallel, the first device light, or the second device light, or even both may be deflected such that they are parallel. To this end, the deflection arrangement may be applied. The deflection arrangement may in embodiments comprise one or more specular reflecting optical elements, like one or more specular reflectors. Hence, the deflection arrangement may comprise one or more (specular) reflectors.

[0078] Hence, in embodiments the deflection arrangement may be configured downstream of one or more of the first light generating device and the second light generating device. Further, in embodiments the deflection arrangement, the first light generating device and the second light generating device may be configured such that the optical axes (01,02) of the first device light and second device light, upon escape from the lighting arrangement (via the deflection arrangement for one or more of the first device light and the second device light), are parallel. Here the term “parallel” may also refer to “substantially parallel” or “essentially parallel”, and may in general refer to a mutual angle between 0-5°, such as between 0-2°, like especially between 0-1°, like 0° (fully parallel). Here below, some further embodiments are described.

[0079] Hence, the phrase “upon escape from the lighting arrangement” may refer to first device light or second device light or both escaping from the lighting arrangement, especially in an optical path in the direction of the light exit of the light generating system. However, as indicated above, this does not necessarily mean that the lighting arrangement light also escapes from the light generating system, though this may be the case in embodiments. The lighting arrangement may in embodiment thus also comprise a light exit (lighting arrangement light exit), which may be comprised by a light exit of the light generating system or may be configured upstream thereof.

[0080] In embodiments, the system may comprise a light exit, like an end window or an (other) optical element, like a lens, or an opening, from which the system light may escape to the external of the system. Hence, the term “light exit” may refer to a part of the system, such as in specific embodiment a part in a housing enclosing the herein described elements of the light generating system (such as optics and light generating devices), from which the system light may emanate (during an operational mode of the light generating system. Hence, the system may comprise a housing, comprising such light exit. The housing may at least partly enclose one or more light generating devices and one or more (other) optical elements.

[0081] The phrase “the deflection arrangement may be configured downstream of one or more of the first light generating device and the second light generating device” may 2024PF80286

[0082] 16 indicated that at least one selected from the first device light and second device light may have to be reflected to allow getting parallel optical axis. Hence, the deflection arrangement may be configured (i) downstream of the first light generating devices but not downstream of the second light generating devices, or (ii) downstream of the second light generating devices but not downstream of the first light generating devices, or (iii) downstream of the first light generating devices and downstream of the second light generating devices. Herein, especially attention is paid to embodiment(s) (ii). Hence, the phrase “via the deflection arrangement for one or more of the first device light and the second device light” may, analogously to the above indicate that (i) first device light may escape from the lighting arrangement only via the deflection arrangement whereas second device light may escape from the lighting arrangement via an optical path not including (part of) the deflection arrangement, (ii) second device light may escape from the lighting arrangement only via the deflection arrangement whereas first device light may escape from the lighting arrangement via an optical path not including (part of) the deflection arrangement, or (iii) first device light may escape from the lighting arrangement via the deflection arrangement and second device light may escape from the lighting arrangement via the deflection arrangement.

[0083] The terms “upstream” and “downstream” relate to an arrangement of items or features relative to the propagation of the light from a light generating means (here the especially the light source), wherein relative to a first position within a beam of light from the light generating means, a second position in the beam of light closer to the light generating means is “upstream”, and a third position within the beam of light further away from the light generating means is “downstream”.

[0084] Hence, in specific embodiments the first device light and the second device light may escape from the respective light generating devices with a mutual angle of essentially 90° and the deflection arrangement may change the direction from the first device light or the second device light (or both) such that the device light emanating from the deflection arrangement propagates essentially parallel with the other device light (being also deflected, or not being deflected). Hence, in embodiments the first light generating device and the second light generating device may be configured such that the optical axes (01,02) of the first and second device light, upon escape from the light generating devices, have a first mutual angle (al) selected from the range of 85-95°, such as selected from the range of 88-92°, like selected from the range of 89-91°, like 90°. Further, in specific embodiments, the deflection arrangement, the first light generating device and the second light generating device may be configured such that the optical axes (01,02) of the first device light and 2024PF80286

[0085] 17 second device light, upon escape from the lighting arrangement, may have a second mutual angle (a2) selected from the range of 0-2°, such as selected from the range of 0-1°, like selected from the range of 0-0.5°, like 0°.

[0086] In embodiments, the deflection arrangement may be configured in a light receiving relationship with the first light generating device (only), wherein the deflection arrangement may (further) be configured to deflect first device light received from the first light generating device in a direction parallel to the second optical axis (01) (of the second device light. In embodiments the deflection arrangement may be specularly reflective for the second device light received by the deflection arrangement.

[0087] Especially, however, in embodiments the deflection arrangement may be configured in a light receiving relationship with the second light generating device (only), wherein the deflection arrangement may (further) be configured to deflect second device light received from the second light generating device in a direction parallel to the first optical axis (01) (of the first device light). In embodiments the deflection arrangement may be specularly reflective for the second device light received by the deflection arrangement.

[0088] Especially, in embodiments the deflection arrangement may comprise a specular reflector. In other embodiments, the deflection arrangement may comprise a plurality of specular reflector. The number of specular reflectors may be the same as the number of second light generating devices (assuming the second device light is deflected), but may also be lower when a single specular reflector is configured to deflect light of more than one second light generating device. Similar reasoning may be applied would the first light be deflected, and analogous reasoning may be applied would both the first device light and the second device light be deflected. Here below, in general embodiments are further described wherein only the second light is deflected.

[0089] Further, in embodiments the first light generating device may comprise a Vertical-Cavity Surface-Emitting Laser diode (VCSEL). Alternatively or additionally, in embodiments the second light generating device comprises one or more of a Fabry-Perot laser diode, a Distributed Feedback (DFB) Laser Diode, a Quantum Cascade Laser (QCL) Diode, and an External Cavity Laser (ECL) Diode.

[0090] A vertical -cavity surface-emitting laser, or VCSEL, is known in the art and may especially be a type of semiconductor laser diode with laser beam emission perpendicular from the top surface, contrary to edge-emitting semiconductor lasers (also inplane lasers) which emit from surfaces formed by cleaving the individual chip out of a wafer. VCSELs may be tunable in emission wavelength, as known in the art. For instance, Dupont 2024PF80286

[0091] 18 et al., Applied Physics Letters 98(16): 161105 - 161105-3, DOI: 10.1063 / 1.3569591, or Wendi Chang et al., Applied Physics Letters 105(7):073303, DOI: 10.1063 / 1.4893758, or Thor Ansbaek, IEEE Journal of Selected Topics in Quantum Electronics 19(4): 1702306-1702306, DOL10.1109 / JSTQE.2013.2257164, or C. J. Chang-Hasnain, IEEE Journal of Selected Topics in Quantum Electronics (Volume: 6, Issue: 6, Nov. -Dec. 2000), DOI:

[0092] 10.1109 / 2944.902146, or Kogel et al., IEEE Sensors Journal, December 2007, volume 7, no.

[0093] 11, pages 1483-1489, or Jayaraman, et al., Electron Lett. 2012 Jul 5; 48(14): 867-869, doi: 10.1049 / el.2012.1552, all document herein incorporated by reference, describe emission wavelength tunable VCSELs. Especially, with varying electrical voltage, the spectral power distribution of the VCSEL may vary. Hence, the term “VCSEL” may thus especially refer herein to a tunable VCSEL, as known in the art. Such tunable VCSELs may be based on MEMS technology. Such (tunable) VCSEL may also be indicated as “MEMS VCSEL”. Therefore, in embodiments the laser diode may comprise a vertical-cavity surface-emitting laser (VCSEL) that has single-mode light emission and a long coherence length. The wavelength sweep may be implemented using a micro-electro-mechanical system (MEMS) to change the length of the laser cavity by which a stable and rapid wavelength sweep results.

[0094] Hence, with a VCSEL different spectral power distributions may be generated. Especially, the VCSEL may be configured to generate (during operation of the VCSEL) laser light. Therefore, the (VCSEL) laser light may have a controllable spectral power distribution. To control the spectral power distribution of the (VCSEL) laser light, a control system may be applied. The control system may be configured to control the spectral power distribution of the (VCSEL) laser light.

[0095] A Fabry -Perot Laser Diode may have a resonant cavity between two parallel mirrors or facets, which allows the laser light to exit from the edges of the diode. A distributed Feedback (DFB) Laser Diode may have a periodic grating structure that provides optical feedback, but they may be designed to emit light from the edges of the diode. A Quantum Cascade Laser (QCL) Diode may (also) emit light from the edges of the diode and may especially be designed to produce mid-infrared wavelengths. An External Cavity Laser (ECL) Diode may use an external cavity to provide optical feedback and produce a narrow linewidth output, and they can (also) be designed to emit light from the edges of the diode.

[0096] Especially, Fabry-Perot laser diodes may have several advantages. For instance, they may have a high output power: Fabry-Perot laser diodes can produce high output powers, making them suitable for use in a variety of applications. Yet, they may have a high efficiency: these laser diodes have high conversion efficiency, meaning that they can 2024PF80286

[0097] 19 convert a high percentage of the electrical power supplied to them into light output. Further, they may have a low threshold current: Fabry -Perot laser diodes have a low threshold current, which means that they can be turned on with a relatively small amount of electrical power. They may also have small sizes: These laser diodes are typically small in size, making them suitable for use in compact devices. Further, they may be relatively low cost: Fabry-Perot laser diodes are relatively inexpensive compared to other types of lasers, making them a cost- effective choice for many applications.

[0098] Especially, Distributed Feedback (DFB) Laser Diodes may have several advantages over other types of laser diodes. For instance, DFB lasers may have a high spectral purity: DFB lasers may produce a single wavelength of light with very narrow linewidth, making them ideal for applications that require high spectral purity. Further, DFB lasers may have a high output power: DFB lasers can produce high output powers, making them suitable for use in a variety of applications. Yet, DFB lasers may generate low noise: These laser diodes have low noise characteristics, making them suitable for use in applications where low noise is important, such as in optical communication systems. Also, DFB lasers may have a stable wavelength: DFB lasers have a stable wavelength over a wide range of temperatures and currents, making them suitable for use in applications that require stable and reliable performance. Yet, DFB lasers may have a narrow linewidth: The narrow linewidth of DFB lasers makes them suitable for use in high-speed communication systems that require high data rates (see also above).

[0099] In embodiments, the first centroid wavelength kc l may be selected from the wavelength range of 620-1320 nm, and / or the second centroid wavelength Zc2 is selected from the wavelength range of 380-600 nm, such as selected from the wavelength range of 380-550 nm. In specific embodiments, the second centroid wavelength Zc2 may be selected from the wavelength range 400-550 nm. Hence, the current invention may allow using a highly efficient blue edge emitting laser in combination with a top emitter emitting at another wavelength range. Due to their configuration, both may efficiently be cooled.

[0100] As indicated above, optical elements, like lenses, may be applied downstream of the first light generating device and downstream of the second light generating device. Especially, optical elements, like lenses, downstream of the light generating device of which its device light is deflected, may be configured downstream of the deflection arrangement. Optical elements, like lenses, may be used to collimate light. The optical elements, like lenses, may also be used to homogenize the light. Hence, in embodiments the light generating system may further comprise a lens arrangement, wherein the lens arrangement may be 2024PF80286

[0101] 20 configured downstream of the first light generating device, the second light generating device, and the deflection arrangement. Further, in embodiments the lens arrangement may be configured to collimate the first device light and the second device light (to provide collimated arrangement light). The phrase “wherein the lens arrangement may be configured downstream of the first light generating device, the second light generating device, and the deflection arrangement” may refer to the fact that in embodiments optical elements, like lenses, downstream of the light generating device of which its device light is deflected, may be configured downstream of the deflection arrangement (and are thereby also configured downstream of the respective light generating device).

[0102] In embodiments, the optical elements, like lenses, which may be configured downstream of the first light generating device and downstream of the second light generating device, may be configured to provide a beam of light comprising first device light and / or second device light (this may depend upon the operational mode of the light generating system) having a beam angle defined by the full width half maximum of up to about 2°, such as up to about 1° (like in specific embodiments up to about 0.1°, such as practically 0°).

[0103] As indicated above, the light generating system may comprise a plurality of first light generating devices, like a plurality of first laser diodes, and / or a plurality of second light generating devices, like a plurality of second laser diodes. This may also have impact on the choices of the deflection arrangement and / or the choices for a lens arrangement. Hence, in embodiments wherein the array of semiconductor-based light generating devices may comprise a plurality of first light generating devices and a plurality of second light generating devices, the deflection arrangement may comprise a plurality of deflection elements (see also above). Yet, in embodiments, the deflection elements may be configured in light receiving relationships with the second light generating devices. Further, in embodiments the lens arrangement may comprise an array of lenses comprising (a) first lenses configured in a light receiving relationship with the first light generating devices, and (b) second lenses configured in light receiving relationships with the (deflection arrangement, more especially the) deflection elements.

[0104] In specific embodiments, the plurality of lenses may only be configured downstream of the second light generating devices. In other embodiments, however, the plurality of lenses may be configured downstream of the first light generating devices and the second light generating devices. In such embodiments, a subset of the plurality of lenses may be configured downstream of the first light generating devices, of which the first device light 2024PF80286

[0105] 21 may reach the lenses, without essentially any deflection in an optical path between the first light generating devices and the respective lenses (of the subset of the plurality of lenses), whereas another subset of the plurality of lenses may be configured downstream of the second light generating devices, of which the second device light may reach the lenses, only via deflection via the deflection arrangement, more especially via respective deflection elements of the deflection arrangement in an optical path between the second light generating devices and the respective lenses (of the other subset of the plurality of lenses).

[0106] As different light generating devices may be applied, the beam shapes may also differ. The deflection arrangement and / or the lens arrangement may in embodiments be configured such that the beam shape of the first device light and / or the beam shape of the second device light are adapted to become more similar. Hence, in embodiments the first lenses and the second lenses may have different shapes. Here, the term “beam shape” may especially refer to the cross-sectional shape, perpendicular to the optical axis, and as defined by the full width half maximum. Hence, the lens arrangement may be used to homogenize the first device light and second device light. For instance, with non-circular lenses (in cross- sectional view), device light having an elliptical cross-section may be shaped into device light having a less elliptical cross-section or even a circular cross-section. For instance, an elliptical lens may be applied to provide a more circular-shaped cross-section of the beam.

[0107] In embodiments, the first device light, upon escape from the first light generating device, may have a circular cross-sectional beam shape (defined by the full width half maximum), wherein the second device light, upon escape from the second light generating device, may have an elliptical cross-sectional beam shape (defined by the full width half maximum). Especially, in embodiments the lens arrangement may (then) be configured to transform the second device light into collimated second device light transmitted by the lens arrangement having a cross-sectional beam shape that is less elliptical compared to the second device light received by the lens arrangement or is circular. The term “circular” may refer to “essentially circular” or “substantially circular”. For instance, the beam shape may be circular when a smallest enclosing circle may have less than 5%, like less than 2%, such as less than 1% of its area not overlapping with the beam.

[0108] As indicated above, the term “first light generating device” may refer to one or more (first) laser diodes (such as a laser bank comprising a plurality of (first) laser diodes) and / or the term “second light generating device” may refer to one or more (second) laser diodes (such as a laser bank comprising a plurality of (second) laser diodes). 2024PF80286

[0109] 22

[0110] Basically, there may be three basic options to provide system light having spectral power defined by more than two distinct peak wavelengths. Here below, a number of embodiments is described, starting with, however, a basic embodiment, wherein the system light may be defined by only two distinct peak wavelengths.

[0111] In a first series of embodiments, the light generating system may comprise one or more first light generating devices, such as comprising one or more first laser diodes, configured to provide first device light having the first centroid wavelength kc l . For instance, the first laser diodes may all be of the same wavelength bin. Further, the light generating system may comprise one or more second light generating devices, such as comprising one or more second laser diodes, configured to provide second device light having the second centroid wavelength Zc2. For instance, the second laser diodes may all be of the same wavelength bin.

[0112] In a second series of embodiments the light generating system may comprise a plurality of first light generating devices, such as comprising a plurality of first laser diodes, comprising two or more subsets of each one or more first light generating devices, wherein the first centroid wavelengths kc l within a subset comprising more than one first light generating device may essentially be identical (like for instance the first laser diodes within a subset may all be of the same wavelength bin), whereas the first centroid wavelengths kc l of different subsets may be different (like for instance the first laser diodes within different subsets may be of the different wavelength bins). For instance, the first centroid wavelengths kc l within a bin may mutually differ not more than 10 nm, whereas the first centroid wavelengths kc l of different bins may mutually differ more than 10 nm, such as at least 20 nm. For instance, a first subset of one or more first light generating devices may be configured to generate red first device light having a centroid wavelength within the 620-630 nm wavelength range and a second subset of one or more (other) first light generating devices may be configured to generate red first device light having a centroid wavelength within the 635-670 nm wavelength range. However, it may also be possible that a first subset of one or more first light generating devices may be configured to generate red first device light having a centroid wavelength within the 620-650 nm wavelength range and a second subset of one or more (other) first light generating devices may be configured to generate first device light having a centroid wavelength within the 500-600 nm wavelength range.

[0113] In a third series of embodiments the light generating system may comprise a plurality of second light generating devices, such as comprising a plurality of second laser diodes, comprising two or more subsets of each one or more second light generating devices, 2024PF80286

[0114] 23 wherein the second centroid wavelengths Xc2 within a subset comprising more than one second light generating device may essentially be identical (like for instance the second laser diodes within a subset may all be of the same wavelength bin), whereas the second centroid wavelengths Ac2 of different subsets may be different (like for instance the second laser diodes within different subsets may be of the different wavelength bins). For instance, the second centroid wavelengths Ac2 within a bin may mutually differ not more than 10 nm, whereas the second centroid wavelengths Ac2 of different bins may mutually differ more than 10 nm, such as at least 20 nm. For instance, a first subset of one or more second light generating devices may be configured to generate second device light having a centroid wavelength within the 440-470 nm wavelength range and a second subset of one or more (other) second light generating devices may be configured to generate second device light having a centroid wavelength within the 470-490 nm wavelength range (or 400-440 nm wavelength range). However, it may also be possible that a first subset of one or more second light generating devices may be configured to generate second device light having a centroid wavelength within the 4300-490 nm wavelength range and a second subset of one or more (other) second light generating devices may be configured to generate red second device light having a centroid wavelength within the 500-600 nm wavelength range.

[0115] Different subsets may be controlled individually. In this way, the spectral power distribution of the system light may be controlled; see further also below.

[0116] In the above three series of embodiments, the type of light generating devices comprised by the lighting arrangement is varied. However, it may also be possible to add a further light generating device, which is, however, not comprised by the lighting arrangement. Such light generating device may be indicated as third light generating devices, and may differ in spectral power of the first device light and may differ in spectral power of the second device light, though this is not necessarily the case.

[0117] Hence, in a fourth series of embodiments, the light generating system may further comprise a third light generating device. Especially, the third light generating device is configured to generate third device light having a third centroid wavelength Zc3. In specific embodiments, |Zc3-kcl |>10 nm, and wherein |Zc3-kc2|>10 nm.

[0118] Especially, the third light generating device may comprise a semiconductorbased light generating device. Hence, in embodiments the third light generating device may be a third semiconductor-based light generating device. Hence, also the third light generating device may may be selected from the group of laser diodes, superluminescent diodes, and multi -junction diodes. More especially, in embodiments the third light generating device may 2024PF80286

[0119] 24 comprise a laser diode. Further, as can be derived from the above, the term “third light generating device” may also refer to a plurality of third light generating devices. Further, in embodiments, the first light generating device(s), the second light generating device(s), and the third light generating devices, may be individually controlled (see also below). Note that the term “third light generating device” may in embodiments refer to a plurality of such third light generating device, each providing third device light having essentially the same third centroid wavelengths (such as when the third light generating devices are from the same wavelength bin / comprise laser diodes from the same wavelength bin). However, in other embodiments, the term “third light generating device” may refer to two or more subsets of each one or more third light generating devices, wherein the third centroid wavelengths Xc3 within a subset comprising more than one third light generating device may essentially be identical (like for instance the third laser diodes within a subset may all be of the same wavelength bin), whereas the third centroid wavelengths Ac3 of different subsets may be different (like for instance the third laser diodes within different subsets may be of the different wavelength bins).

[0120] In a fifth series of embodiments, which can be combined with any of the series of embodiments described above, at least part of the device light emanating from the semiconductor-based light generating devices and / or at least part of the third device light, may be used to irradiate a luminescent material, and generate luminescent material light. This luminescent material light may be comprised by the system light, optionally together with remaining first device light and / or remaining second device light and / or remaining third device light. This will further be described below.

[0121] The device light emanating from the lighting arrangement (or from the lens arrangement) may be relatively collimated light. Hence, it may be desirable to diffuse the device light emanating therefrom. Hence, in embodiments the light generating system may further comprise a diffuser arrangement, wherein the diffuser arrangement may be configured to convert the first device light from the lighting arrangement into diffused first device light and / or to convert the second device light from the lighting arrangement into diffused second device light.

[0122] The diffuser arrangement may comprise one or more of a transmissive diffuser and a reflective diffuser. Further, the diffuser may be a small angle diffuser, like a diffuser having a diffusion angle of 1-5°. The diffuser may also be a large angle diffuser, with optionally arranged downstream thereof a collimator element. The collimator element may be used to collimate the diffused device light. Alternatively or additionally, in embodiments, an 2024PF80286

[0123] 25 optical element may also be applied to focus the device light on the diffuser (of the diffuser arrangement)(thus before it is diffused). In a colinear diffuser arrangement, a collimator may be applied to focus device light on the diffuser and to collimate diffused device light propagating away from the diffuser.

[0124] In embodiments of a colinear diffuser arrangement, device light, which may (or may not) substantially not be diffused, propagating in an optical path from the light generating device that generates this device light to the diffuser arrangement may propagate for at least part of its optical path via a same optical path as diffused device light, i.e. device light having been diffused at the diffuser and propagating away from the diffuser. Hence, an optical axis of incoming (non-diffused) device light and an optical axis of diffused device light, may be parallel (and colinear), though the propagation directions may be opposite.

[0125] As indicated above, in embodiments the light generating system may further comprise a luminescent material, wherein the luminescent material may be configured to at least partly convert one or more the first device light from the lighting arrangement and the second device light from the lighting arrangement into luminescent material light.

[0126] Alternatively or additionally, when the light generating system also comprises the third light generating device, the luminescent material may be configured to at least partly convert the third device light into luminescent material light.

[0127] The term “luminescent material” especially refers to a material that can convert first radiation, especially one or more of UV radiation and blue radiation, into second radiation. In general, the first radiation and second radiation have different spectral power distributions. Hence, instead of the term “luminescent material”, also the terms “luminescent converter” or “converter” or “luminescent converter material” may be applied. In general, the second radiation has a spectral power distribution at larger wavelengths than the first radiation, which is the case in the so-called down-conversion. In specific embodiments, however the second radiation has a spectral power distribution with intensity at smaller wavelengths than the first radiation, which is the case in the so-called up-conversion.

[0128] In embodiments, the “luminescent material” may especially refer to a material that can convert radiation into e.g. visible and / or infrared light. For instance, in embodiments the luminescent material may be able to convert one or more of UV radiation and blue radiation, into visible light. The luminescent material may in specific embodiments also convert radiation into infrared radiation (IR). Hence, upon excitation with radiation, the luminescent material emits radiation. In general, the luminescent material will be a down converter, i.e. radiation of a smaller wavelength is converted into radiation with a larger 2024PF80286

[0129] 26 wavelength (Xex<Xem), though in specific embodiments the luminescent material may comprise up-converter luminescent material, i.e. radiation of a larger wavelength is converted into radiation with a smaller wavelength ( x> m).

[0130] In embodiments, the term “luminescence” may refer to phosphorescence. In embodiments, the term “luminescence” may also refer to fluorescence. Instead of the term “luminescence”, also the term “emission” may be applied. Hence, the terms “first radiation” and “second radiation” may refer to excitation radiation and emission (radiation), respectively. Likewise, the term “luminescent material” may in embodiments refer to phosphorescence and / or fluorescence.

[0131] The term “luminescent material” may also refer to a plurality of different luminescent materials. Examples of possible luminescent materials are indicated below. Hence, the term “luminescent material” may in specific embodiments also refer to a luminescent material composition. Instead of the term “luminescent material” also the term “phosphor” may be applied. These terms are known to the person skilled in the art.

[0132] In embodiments, luminescent materials are selected from garnets and nitrides, especially doped with trivalent cerium or divalent europium, respectively. The term “nitride” may also refer to oxynitride or nitridosilicate, etc. Alternatively or additionally, the luminescent material(s) may be selected from silicates, especially doped with divalent europium.

[0133] In specific embodiments the luminescent material comprises a luminescent material of the type AsBsOn Ce, wherein A in embodiments comprises one or more of Y, La, Gd, Tb and Lu, especially (at least) one or more of Y, Gd, Tb and Lu, and wherein B in embodiments comprises one or more of Al, Ga, In and Sc. Especially, A may comprise one or more of Y, Gd and Lu, such as especially one or more of Y and Lu. Especially, B may comprise one or more of Al and Ga, more especially at least Al, such as essentially entirely Al. Hence, especially suitable luminescent materials are cerium comprising garnet materials. Embodiments of garnets especially include A3B5O12 garnets, wherein A comprises at least yttrium or lutetium and wherein B comprises at least aluminum. Such garnets may be doped with cerium (Ce), with praseodymium (Pr) or a combination of cerium and praseodymium; especially however with Ce. Especially, B may comprise aluminum (Al); however, in addition to aluminum, B may also partly comprise gallium (Ga) and / or scandium (Sc) and / or indium (In), especially up to about 20% of B, more especially up to about 10 % of B (i.e. the B ions essentially consist of 90 or more mole % of Al and 10 or less mole % of one or more of Ga, Sc and In); B may especially comprise up to about 10% gallium. In another variant, B 2024PF80286

[0134] 27 and O may at least partly be replaced by Si and N. The element A may especially be selected from the group consisting of yttrium (Y), gadolinium (Gd), terbium (Tb) and lutetium (Lu). Further, Gd and / or Tb are especially only present up to an amount of about 20% of A. In a specific embodiment, the garnet luminescent material comprises (Yi-xLux)3B50i2:Ce, wherein x is equal to or larger than 0 and equal to or smaller than 1. The term “:Ce”, indicates that part of the metal ions (i.e. in the garnets: part of the “A” ions) in the luminescent material is replaced by Ce. For instance, in the case of (Yi-xLux)3A150i2:Ce, part of Y and / or Lu is replaced by Ce. This is known to the person skilled in the art. Ce will replace A in general for not more than 10%; in general, the Ce concentration will be in the range of 0.1 to 4%, especially 0.1 to 2% (relative to A). Assuming 1% Ce and 10% Y, the full correct formula could be (Yo.iLuo.89Ceo.oi)3A150i2. Ce in garnets is substantially or only in the trivalent state, as is known to the person skilled in the art.

[0135] In embodiments, the luminescent material may alternatively or additionally comprise one or more of MS:Eu2+and / or NfcSis Eu2and / or MAlSiHrEu2and / or Ca2AlSi3O2Ns:Eu2+, etc., wherein M comprises one or more of Ba, Sr and Ca, especially in embodiments at least Sr. Hence, in embodiments, the luminescent may comprise one or more materials selected from the group consisting of (Ba,Sr,Ca)S:Eu, (Ba,Sr,Ca)AlSiN3:Eu and (Ba,Sr,Ca)2SisN8:Eu. In these compounds, europium (Eu) is substantially or only divalent, and replaces one or more of the indicated divalent cations. In general, Eu will not be present in amounts larger than 10% of the cation; its presence will especially be in the range of about 0.5 to 10%, more especially in the range of about 0.5 to 5% relative to the cation(s) it replaces. The term “:Eu”, indicates that part of the metal ions is replaced by Eu (in these examples by Eu2+). For instance, assuming 2% Eu in CaAlSi Eu, the correct formula could be (Cao.98Euo.o2)AlSiN3. Divalent europium will in general replace divalent cations, such as the above divalent alkaline earth cations, especially Ca, Sr or Ba. The material (Ba,Sr,Ca)S:Eu can also be indicated as MS:Eu, wherein M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr) and calcium (Ca); especially, M comprises in this compound calcium or strontium, or calcium and strontium, more especially calcium. Here, Eu is introduced and replaces at least part of M (i.e. one or more of Ba, Sr, and Ca). Further, the material (Ba,Sr,Ca)2SisN8:Eu can also be indicated as NfcSis Eu, wherein M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr) and calcium (Ca); especially, M comprises in this compound Sr and / or Ba. In a further specific embodiment, M consists of Sr and / or Ba (not taking into account the presence of Eu), especially 50 to 100%, more especially 50 to 90% Ba and 50 to 0%, especially 50 to 2024PF80286

[0136] 28

[0137] 10% Sr, such as Bai.sSro.sSis Eu (i.e. 75 % Ba; 25% Sr). Here, Eu is introduced and replaces at least part of M, i.e. one or more of Ba, Sr, and Ca). Likewise, the material (Ba,Sr,Ca)AlSiN3:Eu can also be indicated as MAlSi Eu, wherein M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr) and calcium (Ca); especially, M comprises in this compound calcium or strontium, or calcium and strontium, more especially calcium. Here, Eu is introduced and replaces at least part of M (i.e. one or more of Ba, Sr, and Ca). Eu in the above indicated luminescent materials is substantially or only in the divalent state, as is known to the person skilled in the art.

[0138] In embodiments, a red luminescent material may comprise one or more materials selected from the group consisting of (Ba,Sr,Ca)S:Eu, (Ba,Sr,Ca)AlSiN3:Eu and (Ba,Sr,Ca)2SisN8:Eu. In these compounds, europium (Eu) is substantially or only divalent, and replaces one or more of the indicated divalent cations. In general, Eu will not be present in amounts larger than 10% of the cation; its presence will especially be in the range of about 0.5 to 10%, more especially in the range of about 0.5 to 5% relative to the cation(s) it replaces. The term “:Eu”, indicates that part of the metal ions is replaced by Eu (in these examples by Eu2+). For instance, assuming 2% Eu in CaAlSi Eu, the correct formula could be (Cao.98Euo.o2)AlSiN3. Divalent europium will in general replace divalent cations, such as the above divalent alkaline earth cations, especially Ca, Sr or Ba.

[0139] The material (Ba,Sr,Ca)S:Eu can also be indicated as MS:Eu, wherein M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr) and calcium (Ca); especially, M comprises in this compound calcium or strontium, or calcium and strontium, more especially calcium. Here, Eu is introduced and replaces at least part of M (i.e. one or more of Ba, Sr, and Ca).

[0140] Further, the material (Ba,Sr,Ca)2SisN8:Eu can also be indicated as NfcSis Eu, wherein M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr) and calcium (Ca); especially, M comprises in this compound Sr and / or Ba. In a further specific embodiment, M consists of Sr and / or Ba (not taking into account the presence of Eu), especially 50 to 100%, more especially 50 to 90% Ba and 50 to 0%, especially 50 to 10% Sr, such as Bai.sSro.sSis Eu (i.e. 75 % Ba; 25% Sr). Here, Eu is introduced and replaces at least part of M, i.e. one or more of Ba, Sr, and Ca).

[0141] Likewise, the material (Ba,Sr,Ca)AlSiN3:Eu can also be indicated as MAlSi Eu, wherein M is one or more elements selected from the group consisting of barium (Ba), strontium (Sr) and calcium (Ca); especially, M comprises in this compound 2024PF80286

[0142] 29 calcium or strontium, or calcium and strontium, more especially calcium. Here, Eu is introduced and replaces at least part of M (i.e. one or more of Ba, Sr, and Ca).

[0143] In embodiments, the luminescent material may comprise a luminescent material of the type Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux. Herein, M may comprise one or more of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba), such as especially one or more of Ca, Sr, and Ba. Hence, Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Euxmay especially refer to (Mg,Ca,Sr,Ba)i-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux. Such a luminescent material may be indicated as an SLA-type phosphor, or SLA phosphor. Luminescent materials of the type Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux may be described in US2021171827A1, which is hereby herein incorporated by reference. In Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux, x may be selected from the range of 0 < x < 0.1, such as from the range of 0.0005 < x < 0.08, especially from the range of 0.001 < x < 0.05. Hence, europium (Eu) may not replace more than 10% of the cation M, and may substantially or only be in the divalent state (Eu2+), as is known to the person skilled in the art. Further, in Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux, y may be selected from the range of 0 < y < 1, such as from the range of 0 < y < 0.75, especially from the range of 0 < y < 0.6. In specific embodiments, y = 0. In Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux, z may be selected from the range of 0 < z < 0.1, such as from the range of 0 < z < 0.07, especially from the range of 0 < z < 0.05. Hence, in embodiments, in an SLA phosphor, SiN may replace A1O to a maximum of 10 mole%. In embodiments, an SLA phosphor may crystallize in a UCr4C4 type crystal structure. Hence, the luminescent material may comprise a luminescent material of the type Mi-xLi3-2yAli+2y-zSizO4-4y-zN4y+z:Eux, wherein M comprises one or more of Ca, Sr, and Ba, wherein 0 < x < 0.04, wherein 0 < y < 1, wherein 0 < z < 0.05, and wherein y + z < 1.

[0144] Further, the luminescent material may comprise a SiAlON phosphor, such as selected from the group comprising (a) S112— m— n Alm+nOnNi6-n:Eu2+(a-SiA10N), (b) Si6-nAlnOnN8-n:Eu2+, wherein 0 < n < 4.2 (P-SiAlON), and (c) Si2-nAlnOi+nN2-n:Eu2+, wherein 0 < n < 0.2 (O-SiAlON).

[0145] Eu in the above indicated luminescent materials is substantially or only in the divalent state, as is known to the person skilled in the art.

[0146] The term “luminescent material” herein especially relates to inorganic luminescent materials.

[0147] Hence, when M (or A) in chemical formulas refer to n different elements, this may imply that the relevant formula may comprise for the M (or A) position in the formula essentially any permutation of the n different elements. For instance, when M=Ba,Sr,Ca or 2024PF80286

[0148] 30 when M comprises one or more of Ba, Sr, Ca or when M refers to Ba,Sr,Ca, i.e. n=3, this may imply that in the formula Ba, Sr, Ca, (BaxSry), (BaxCay), (CaxSry), or (BaxSryCaz), may be available, wherein in general x+y+z=l.

[0149] Referring to e.g. M’xM2-2XAXe, this may refer to e.g. one or more of K2SiFe:Mn4+and of Rb2SiFe:Mn4+, or (KxRby)2SiFe:Mn4+, etc. Referring to (Ba,Sr,Ca)AlSiN3:Eu, this may imply BaAlSiN3:Eu, SrAlSiN3:Eu, CaAlSiN3:Eu, (BaxSry)AlSiN3:Eu, (BaxCay)AlSiN3:Eu, (CaxSry)AlSiN3:Eu, or (BaxSryCaz)AlSiN3:Eu. Referring to e.g. A3BsOi2:Ce, wherein A in embodiments comprises one or more of Y, La, Gd, Tb and Lu, this may imply Y3BsOi2:Ce, La3BsOi2:Ce, GdBsOn Ce, TbsBsOn Ce, Lu3BsOi2:Ce, but also e.g. (Yx,Gdy)3B50i2:Ce, (Yx,Luy)3B50i2:Ce, (Gdx,Luy)3B50i2:Ce, (Yx,Gdy,Luz)3B50i2:Ce, etc. etc., with hereby only limiting for the sake of economy to unary, binary, and ternary examples, though quaternary and higher examples are not excluded herein.

[0150] Further, indications like “K,Rb” or Ba,Sr,Ca, and similar indications (see also above), may indicate one or more of such elements. Hence, (K,Rb)2SiFe:Mn4+, may e.g. refer to K2SiFe:Mn4+and of Rb2SiFe:Mn4+, or (KxRby)2SiFe:Mn4+. Also herein in general x+y=l. Likewise, K2(Si,Ti)Fe:Mn4+, may e.g. refer to K2SiFe:Mn4+, K2TiFe:Mn4+, or K2(Sia,Tib)Fe:Mn4+. Also herein in general a+b=l.

[0151] Hence, when M (or A), etc., may refer to n different elements, with n being at least two, 2n-l permutations may in principle be possible.

[0152] Alternatively or additionally, also other luminescent materials may be applied. For instance quantum dots and / or organic dyes may be applied and may optionally be embedded in transmissive matrices like e.g. polymers, like PMMA, or polysiloxanes, etc. etc.

[0153] Different luminescent materials may have different spectral power distributions of the respective luminescent material light. Alternatively or additionally, such different luminescent materials may especially have different color points (or dominant wavelengths).

[0154] As indicated above, other luminescent materials may also be possible. Hence, in specific embodiments the luminescent material is selected from the group of divalent europium containing nitrides, divalent europium containing oxynitrides, divalent europium containing silicates, cerium comprising garnets, and quantum structures. Quantum structures may e.g. comprise quantum dots or quantum rods (or other quantum type particles) (see above). Quantum structures may also comprise quantum wells. Quantum structures may also comprise photonic crystals. 2024PF80286

[0155] 31

[0156] As can be derived from the above, the term “different luminescent materials” may refer to luminescent materials that are different, or to two compositions, each including at least one luminescent material in common, but wherein the compositions differ. For instance, a first luminescent material comprising luminescent materials A and B, and a second luminescent material comprising only A or only B, or comprising both A and B, but in a different weight ratio. Such first luminescent material and second luminescent material may have different spectral power distributions of their respective luminescent material light.

[0157] In embodiments, the luminescent material may comprise one or more of (a) a luminescent material of the type AsBsOn Ce, wherein A comprises one or more of Y, La, Gd, Tb and Lu, and wherein B comprises one or more of Al, Ga, In and Sc, and (b) a luminescent material selected from the types of a divalent europium comprising nitride luminescent material and a divalent europium comprising oxynitride luminescent material, and (c) a luminescent material of the type M’xM2-2xAX6:Mn4+, wherein M’ comprises an alkaline earth cation, M comprises a monovalent cation, and x is in the range of 0-1, wherein A comprises a tetravalent cation, comprising one or more of silicon, titanium, and germanium, wherein X comprises a monovalent anion, at least comprising fluorine.

[0158] As indicated above, the light generating system may be configured to generate system light. In embodiments, in an operational mode of the light generating system, the system light may comprise one or more, such as two or more, of at least part of the first device light, at least part of the second device light, and optionally at least part of third device light from a third semiconductor-based light generating device. Further, (alternatively or additionally ) in embodiments, in an operational mode of the light generating system, the system light may comprise one or more, the diffused first device light as describe above, the diffused second device light as described above, and optionally the luminescent material light as described above. Especially, in embodiments in an operational mode of the light generating system, the system light may be white light. Further, in specific embodiments, the system light (in such operational mode(s)) may have one or more of (i) a correlated color temperature selected from the range of 1500-12000 K and (ii) a color rendering index of at least 65.

[0159] In embodiments, the correlated color temperature may be selected from the range of 1700 -9000 K, such as selected from the range of 2000-6500 K. In yet more specific embodiments, the correlated color temperature may be selected from the range of 2500-4200 K. 2024PF80286

[0160] 32

[0161] Alternatively or additionally, in embodiments the color rendering index may be at least 75, more especially at least 80. In yet more specific embodiments the color rendering index may be at least 85.

[0162] As indicated above, in embodiments the system light may have a controllable spectral power distribution. Hence, in embodiments the light generating system may further comprises a control system, wherein the control system may be configured to control a spectral power distribution of the system light, in specific embodiments especially by individually controlling the first light generating devices and the second light generating devices. Further, in embodiments the control system may be configured to individually control subsets of first light generating devices and / or to individually control subsets of second light generating devices. Further, the control system may be configured to control the third light generating device(s) (or subsets of third light generating devices.

[0163] The term “controlling” and similar terms especially refer at least to determining the behavior or supervising the running of an element. Hence, herein “controlling” and similar terms may e.g. refer to imposing behavior to the element (determining the behavior or supervising the running of an element), etc., such as e.g. measuring, displaying, actuating, opening, shifting, changing temperature, etc.. Beyond that, the term “controlling” and similar terms may additionally include monitoring. Hence, the term “controlling” and similar terms may include imposing behavior on an element and also imposing behavior on an element and monitoring the element. The controlling of the element can be done with a control system, which may also be indicated as “controller”. The control system and the element may thus at least temporarily, or permanently, functionally be coupled. The element may comprise the control system. In embodiments, the control system and element may not be physically coupled. Control can be done via wired and / or wireless control. The term “control system” may also refer to a plurality of different control systems, which especially are functionally coupled, and of which e.g. one control system may be a master control system and one or more others may be slave control systems. A control system may comprise or may be functionally coupled to a user interface.

[0164] The control system may also be configured to receive and execute instructions from a remote control. In embodiments, the control system may be controlled via an App on a device, such as a portable device, like a Smartphone or I-phone, a tablet, etc.. The device is thus not necessarily coupled to the lighting system, but may be (temporarily) functionally coupled to the lighting system. 2024PF80286

[0165] 33

[0166] Hence, in embodiments the control system may (also) be configured to be controlled by an App on a remote device. In such embodiments the control system of the lighting system may be a slave control system or control in a slave mode. For instance, the lighting system may be identifiable with a code, especially a unique code for the respective lighting system. The control system of the lighting system may be configured to be controlled by an external control system which has access to the lighting system on the basis of knowledge (input by a user interface of with an optical sensor (e.g. QR code reader) of the (unique) code. The lighting system may also comprise means for communicating with other systems or devices, such as on the basis of Bluetooth, Thread, WIFI, LiFi, ZigBee, BLE or WiMAX, or another wireless technology.

[0167] The system, or apparatus, or device may execute an action in a “mode” or “operation mode” or “mode of operation” or “operational mode”. The term “operational mode may also be indicated as “controlling mode”. Likewise, in a method an action or stage, or step may be executed in a “mode” or “operation mode” or “mode of operation” or “operational mode”. This does not exclude that the system, or apparatus, or device may also be adapted for providing another controlling mode, or a plurality of other controlling modes. Likewise, this may not exclude that before executing the mode and / or after executing the mode one or more other modes may be executed.

[0168] However, in embodiments a control system may be available, that is adapted to provide at least the controlling mode. Would other modes be available, the choice of such modes may especially be executed via a user interface, though other options, like executing a mode in dependence of a sensor signal or a (time) scheme, may also be possible. The operation mode may in embodiments also refer to a system, or apparatus, or device, which can only operate in a single operation mode (i.e. “on”, without further tunability).

[0169] Hence, in embodiments, the control system may control in dependence of one or more of an input signal of a user interface, a sensor signal (of a sensor), and a timer. The term “timer” may refer to a clock and / or a predetermined time scheme.

[0170] As indicated above, the light generating system may comprise a laser bank, wherein the laser bank comprises the first light generating device and the second light generating device; wherein each of the first light generating device and the second light generating device comprise a plurality of laser diodes. Further, as indicated above, the array of semiconductor-based light generating devices may comprise NxM semiconductor-based light generating devices, wherein N>2 and wherein M>2. In other embodiments, however, the light generating system may comprise a first laser bank comprising a plurality of first 2024PF80286

[0171] 34 light generating devices and / or a second laser bank comprising a plurality of second light generating devices (see further also above).

[0172] The light generating system may be part of or may be applied in e.g. office lighting systems, household application systems, shop lighting systems, home lighting systems, accent lighting systems, spot lighting systems, theater lighting systems, fiber-optics application systems, projection systems, self-lit display systems, pixelated display systems, segmented display systems, warning sign systems, medical lighting application systems, indicator sign systems, decorative lighting systems, portable systems, automotive applications, (outdoor) road lighting systems, urban lighting systems, greenhouse lighting systems, horticulture lighting, digital projection, or LCD backlighting. The light generating system (or luminaire) may be part of or may be applied in e.g. optical communication systems or disinfection systems.

[0173] The term “white light”, and similar terms, herein, is known to the person skilled in the art. It may especially relate to light having a correlated color temperature (CCT) between about 1800 K and 20000 K, such as between 2000 and 20000 K, especially 2700- 20000 K, for general lighting especially in the range of about 2000-7000 K, such as in the range of 2700 K and 6500 K. In embodiments, e.g. for backlighting purposes, or for other purposes, the correlated color temperature (CCT) may especially be in the range of about 7000 K and 20000 K. Yet further, in embodiments the correlated color temperature (CCT) is especially within about 15 SDCM (standard deviation of color matching) from the BBL (black body locus), especially within about 10 SDCM from the BBL, even more especially within about 5 SDCM from the BBL. In specific embodiments, the correlated color temperature (CCT) may be selected from the range of 6000-12000 K, like selected from the range of 7000-12000 K, like at least 8000 K. Yet further, in embodiments the correlated color temperature (CCT) may be selected from the range of 6000-12000 K, like selected from the range of 7000-12000 K, in combination with a CRI of at least 70.

[0174] The terms “visible”, “visible light” or “visible emission” and similar terms refer to light having one or more wavelengths in the range of about 380-780 nm. Herein, UV may especially refer to a wavelength selected from the range of 190-380 nm, such as 200-380 nm. The terms “light” and “radiation” are herein interchangeably used, unless clear from the context that the term “light” only refers to visible light. The terms “light” and “radiation” may thus refer to UV radiation, visible light, and IR radiation. In specific embodiments, especially for lighting applications, the terms “light” and “radiation” refer to (at least) visible light. The terms “violet light” or “violet emission”, and similar terms, may especially relate 2024PF80286

[0175] 35 to light having a wavelength in the range of about 380-440 nm. In specific embodiments, the violet light may have a centroid wavelength in the 380-440 nm range. The terms “blue light” or “blue emission”, and similar terms, may especially relate to light having a wavelength in the range of about 440-490 nm (including some violet and cyan hues). In specific embodiments, the blue light may have a centroid wavelength in the 440-490 nm range. The terms “green light” or “green emission”, and similar terms, may especially relate to light having a wavelength in the range of about 490-560 nm. In specific embodiments, the green light may have a centroid wavelength in the 490-560 nm range. The terms “yellow light” or “yellow emission”, and similar terms, may especially relate to light having a wavelength in the range of about 560-590 nm. In specific embodiments, the yellow light may have a centroid wavelength in the 560-590 nm range. The terms “orange light” or “orange emission”, and similar terms, may especially relate to light having a wavelength in the range of about 590-620 nm. In specific embodiments, the orange light may have a centroid wavelength in the 590-620 nm range. The terms “red light” or “red emission”, and similar terms, may especially relate to light having a wavelength in the range of about 620-780 nm, such as 620-750 nm. In specific embodiments, the red light may have a centroid wavelength in the 620-780 nm range, such as 620-750 nm. The terms “cyan light” or “cyan emission”, and similar terms, especially relate to light having a wavelength in the range of about 490- 520 nm. In specific embodiments, the cyan light may have a centroid wavelength in the 490- 520 nm range. The terms “amber light” or “amber emission”, and similar terms, may especially relate to light having a wavelength in the range of about 585-605 nm, such as about 590-600 nm. In specific embodiments, the amber light may have a centroid wavelength in the 585-605 nm range. The phrase “light having one or more wavelengths in a wavelength range” and similar phrases may especially indicate that the indicated light (or radiation) has a spectral power distribution with at least intensity or intensities at these one or more wavelengths in the indicate wavelength range. For instance, a blue emitting solid state light source will have a spectral power distribution with intensities at one or more wavelengths in the 440-495 nm wavelength range.

[0176] In yet a further aspect, the invention also provides a lamp or a luminaire comprising the light generating system as defined herein. The luminaire may further comprise a housing, optical elements, louvres, etc. etc... The lamp or luminaire may further comprise a housing enclosing the light generating system. The lamp or luminaire may comprise a light window in the housing or a housing opening, through which the system light may escape from the housing. In yet a further aspect, the invention also provides a projection 2024PF80286

[0177] 36 device comprising the light generating system as defined herein. Especially, a projection device or “projector” or “image projector” may be an optical device that projects an image (or moving images) onto a surface, such as e.g. a projection screen. The projection device may include one or more light generating systems such as described herein. Hence, in an aspect the invention also provides a lighting device selected from the group of a lamp, a luminaire, a projector device, a disinfection device, a photochemical reactor, and an optical wireless communication device, comprising the light generating system as defined herein. The lighting device may comprise a housing or a carrier, configured to house or support, one or more elements of the light generating system. For instance, in embodiments the lighting device may comprise a housing or a carrier, configured to house or support one or more of the first light generating device and the second light generating device, and optionally the deflection arrangement.

[0178] In yet a further aspect, the invention also provides a lighting fixture comprising the light generating system as defined herein. Hence, in yet a further aspect, the light generating system may comprise a device selected from the group of a lamp, a luminaire, or a lighting fixture, wherein the lamp, luminaire, or lighting fixture may comprise one or more elements of the light generating system, such as the first light generating device and the second light generating device, and optionally the deflection arrangement, and the light generating system may further comprise e.g. a control system configured to control the device. The term “lighting fixture” may refer to a light emitting system like a moving head, a search light, a stage light, etc. Generally these fixtures may have various control options for changing one or more of the direction of the light (e.g. via gimbals or rotary stages), the beam angle / width (e.g. via zoom optics), the beam pattern (e.g. via mechanical selection of a specific aperture that defines a virtual and patterned source for the further projection optics), the color of the light (e.g. via mechanical selection of a certain color filter), and of course the luminous flux, and mostly these are remotely controllable. In embodiments, the lamp or luminaire may be a downlighter or an uplighter. In embodiments, the lamp may comprise a torch. In embodiments, the lighting device may comprise an automotive lighting device or an entertainment lighting device comprising the herein described light generating system.

[0179] BRIEF DESCRIPTION OF THE DRAWINGS

[0180] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: 2024PF80286

[0181] 37

[0182] Figs, la-lc schematically depict some aspects;

[0183] Figs. 2a-2d schematically depict some further embodiments; and Fig. 3 schematically depict some application embodiments. The schematic drawings are not necessarily to scale.

[0184] DETAILED DESCRIPTION OF THE EMBODIMENTS

[0185] Fig. la schematically depicts a light generating system 1000 comprising a lighting arrangement 2000. Furthermore, in embodiments, the lighting arrangement 2000 may comprise an array 2100 of semiconductor-based light generating devices 100 and a deflection arrangement 2400. Moreover, in embodiments, the array 2100 of semiconductorbased light generating devices 100 may comprise a first light generating device 110 and a second light generating device 120. Furthermore, in embodiments, the semiconductor-based light generating devices 100 may be selected from the group of laser diodes, superluminescent diodes, and multi -junction diodes. Furthermore, in embodiments, the first light generating device 110 may be a top-emitting light generating device. Especially, in embodiments, the first light generating device 110 may be configured to generate first device light 111 having a first optical axis 01 and having a first centroid wavelength Xcl. Yet, in embodiments the second light generating device 120 may be a side-emitting light generating device. Especially, the second light generating device 120 may be configured to generate second device light 121 having a second optical axis (02 and having a second centroid wavelength Xc2. Moreover, in embodiments, the first light generating device 110 and the second light generating device 120 may be configured such that the optical axes 01,02 of the first and second device light 111,121 upon escape from the light generating devices 110,120 may be non-parallel. In further embodiments, |Xc2-Xcl|>10 nm. Further, in embodiments, the lighting arrangement 2000 may be configured to generate arrangement light 2001 (during operation of the lighting arrangement 2000) comprising one or more of the first device light 111 and second device light 121. In further embodiments, the deflection arrangement 2400 may be configured downstream of one or more of the first light generating device 110 and the second light generating device 120. Furthermore, in embodiments, the deflection arrangement 2400, the first light generating device 110 and the second light generating device 120 may be configured such that the optical axes 01,02 of the first device light 111 and second device light 121, upon escape from the lighting arrangement 2000 (via the deflection arrangement 2400 for one or more of the first device light 111 and the second device light 121), may be parallel. 2024PF80286

[0186] 38

[0187] Especially, the first light generating device 110 and the second light generating device 120 may be configured such that the optical axes 01,02 of the first and second device light 111,121, upon escape from the light generating devices 110,120, may have a first mutual angle (al) selected from the range of 85-95°. Furthermore, in embodiments, the deflection arrangement 2400, the first light generating device 110 and the second light generating device 120 may be configured such that the optical axes 01,02 of the first device light 111 and second device light 121, upon escape from the lighting arrangement 2000, may have a second mutual angle (a2) selected from the range of 0-2°. Especially, the first light generating device 110 and the second light generating device 120 may comprise a laser diode. In Fig. la, al=90° and a2=0°. However, other values are herein not excluded.

[0188] In further embodiments, the light generating system 1000 may further comprise a support 2200, configured to support the first light generating device 110 and the second light generating device 120 and the deflection arrangement 2400. Especially, the support 2200 may have a support cross-sectional plane (P). In further embodiments, the first optical axis 01, upon escape of the first device light 111 from the first light generating device 110, may be configured perpendicular to the support cross-sectional plane (P). Moreover, in embodiments, the second optical axis (02, upon escape of the second device light 121 from the second light generating device 120, may be configured parallel to the support cross- sectional plane (P).

[0189] Moreover, in embodiments, the deflection arrangement 2400 may be configured in a light receiving relationship with the second light generating device 120 (only). In further embodiments, the deflection arrangement 2400 may be configured to deflect second device light 121 received from the second light generating device 120 in a direction parallel to the first optical axis 01. Especially, the deflection arrangement 2400 may comprise a specular reflector 2405. For the sake of clarity in the drawings, reference 02 indicates the optical axis of the second device light 121 downstream of the second light generating device 120, but upstream of the deflection arrangement 2400 and reference 02’ especially indicates the optical axis of second device light 121 downstream of the deflection arrangement 2400. Hence, the optical axes 01,02 (here thus indicated as 01 and 02’) of the first device light 111 and second device light 121, upon escape from the lighting arrangement 2000, may be parallel.

[0190] In further embodiments, the first light generating device 110 may comprise a Vertical-Cavity Surface-Emitting Laser diode (VCSEL). Especially, the second light generating device 120 may comprise one or more of a Fabry-Perot laser diode, a Distributed 2024PF80286

[0191] 39

[0192] Feedback (DFB) Laser Diode, a Quantum Cascade Laser (QCL) Diode, and an External Cavity Laser (ECL) Diode.

[0193] In embodiments, the first centroid wavelength kc l may be selected from the wavelength range of 620-1320 nm. Furthermore, alternatively or additionally in embodiments, the second centroid wavelength Zc2 may be selected from the wavelength range of 380-550 nm.

[0194] Especially, the light generating system lOOOmay further comprise a lens arrangement 2600. Furthermore, in embodiments, the lens arrangement 2600 may be configured downstream of the first light generating device 110, the second light generating device 120, and the deflection arrangement 2400. Furthermore, in embodiments, the lens arrangement 2600 may be configured to collimate the first device light 111 and the second device light 121 (to provide collimated arrangement light 2011).

[0195] In further embodiments, the array 2100 of semiconductor-based light generating devices 100 may comprise a plurality of first light generating devices 110 and a plurality of second light generating devices 120. Especially, the deflection arrangement 2400 may comprise a plurality of deflection elements 2405. Furthermore, in embodiments, the deflection elements 2405 may be configured in light receiving relationships with the second light generating devices 120. Further, in embodiments, the lens arrangement 2600 may comprise an array of lenses comprising (a) first lenses 2610 configured in a light receiving relationship with the first light generating devices 110, and (b) second lenses 2620 configured in light receiving relationships with the (deflection arrangement 2400, more especially the) deflection elements 2405. Further, in embodiments, the first lenses 2610 and the second lenses 2620 may have different shapes.

[0196] For instance, a standard (blue) laser may be very efficient but may need to be mounted horizontally. However, a (red) VCSEL can be mounted vertically. In this way, an efficient solution may be offered. Further, the support 2200 may be thermally conductive and / or be in thermal contact with a thermally conductive body (not depicted), such a heat sink. This may be beneficial for efficiency.

[0197] Referring also to Fig. lb, in embodiments, the first device light 111, upon escape from the first light generating device 110, may have a circular cross-sectional beam shape (defined by the full width half maximum). Further, in embodiments, the second device light 121, upon escape from the second light generating device 120, may have an elliptical cross-sectional beam shape (defined by the full width half maximum); where the lens arrangement 2600 may be configured to transform the second device light 121 into 2024PF80286

[0198] 40 collimated second device light 121 transmitted by the lens arrangement 2600 having a cross- sectional beam shape that may be less elliptical compared to the second device light 121 received by the lens arrangement 2600 or may be circular. Hence, the ratio of Al and A2 may be changed to a value closer than 1, or even essentially 1.

[0199] In embodiments, the light generating system (1000) may be configured to generate system light 1001, wherein in an operational mode of the light generating system 1000, the system light 1001 is white light comprising at least two of: (a) the diffused first device light 111, (b) the diffused second device light 121, and (c) luminescent material light 201, as further also described below. Further, in embodiments the system light 1001 (in this operational mode) may have a correlated color temperature selected from the range of 1500- 12000 K and a color rendering index of at least 65.

[0200] Further, in embodiments, the light generating system 1000 may further comprise a control system 300. Furthermore, in embodiments, the control system 300 may be configured to control a spectral power distribution of the system light 1001 by individually controlling the first light generating device(s) 110 and the second light generating device(s) 120.

[0201] Further, in embodiments, the light generating system 1000 may comprise a laser bank 105. Moreover, in embodiments, the laser bank 105 may comprise the first light generating device 110 and the second light generating device 120. In specific embodiments, in embodiments, each of the first light generating device 110 and the second light generating device 120 may comprise a plurality of laser diodes. In further embodiments, the array 2100 of semiconductor-based light generating devices 100 may comprise NxM semiconductorbased light generating devices 100. Further, in embodiments, N>2. Especially, M>2. Referring to Fig. 1c, schematically a top view of an NxM arrangement 2000 is shown. N may especially be at least 2, like at least 3, and / or M may especially be at least 2, like at least 3. Here, the first direction and the second direction are perpendicular, and N=4 and M=4, as in both directions there are along lines two first light generating devices 110 and two second light generating devices 120. However, other embodiments may also be possible.

[0202] Referring to Fig. 2a, embodiments I-II, in embodiments, the light generating system 1000 may further comprise a diffuser arrangement 1700. Especially, the diffuser arrangement 1700 may be configured to convert the first device light 111 from the lighting arrangement 2000 into diffused first device light 111 and / or to convert the second device light 121 from the lighting arrangement 2000 into diffused second device light 121. 2024PF80286

[0203] 41

[0204] Reference 1090 indicates a light exit. In embodiments, the system 1000 may comprise a light exit 1090, like an end window or an (other) optical element, like a lens, or an opening, from which the system light may escape to the external of the system. Hence, the term “light exit” may refer to a part of the system, such as in specific embodiment a part in a housing enclosing the herein described elements of the light generating system (such as optics and light generating devices), from which the system light may emanate (during an operational mode of the light generating system. Hence, the system may comprise a housing, comprising such light exit 1090. The housing may at least partly enclose one or more light generating devices 110,120 and one or more (other) optical elements.

[0205] Fig. 2a, embodiments I schematically depicts a transmissive diffuser arrangement 1700, such a volume diffuser or scattering diffuser. Embodiment II of Fig. 2a schematically depicts a reflective diffuser arrangement 1700. By using linear polarized first device light 111 and / or linear polarized second device light 121, a polarizing beam splitter 510, a retarder 530, especially comprising a % plate, and a polarization maintaining diffuser arrangement 1700, the polarizing beam splitter 530 may direct the device light 111,121, having a first linear polarization, to the diffuser arrangement 1700, and the polarizing beam splitter 530 may directed diffused device light 111,121, having a second linear polarization (like s or p), complementary to the first linear polarization (like p or s), in an optical path to a light exit 1090. Reference 710 indicates a polarization maintaining diffuser.

[0206] Referring to Fig. 2b, in embodiments, the light generating system 1000 may further comprise a luminescent material 200. Further, in embodiments, the luminescent material 200 may be configured to at least partly convert one or more the first device light 111 from the lighting arrangement 2000 and the second device light 121 from the lighting arrangement 2000 into luminescent material light 201. In further embodiments, the luminescent material 200 may comprise one or more of (a) a luminescent material of the type AsBsOn Ce. Further, in embodiments, A may comprise one or more of Y, La, Gd, Tb and Lu. Moreover, in embodiments, B may comprise one or more of Al, Ga, In and Sc, and (b) a luminescent material selected from the types of a divalent europium comprising nitride luminescent material and a divalent europium comprising oxynitride luminescent material, and (c) a luminescent material of the type M’xM2-2xAX6:Mn4+. Moreover, in embodiments, M’ may comprise an alkaline earth cation, M may comprise a monovalent cation, and x may be in the range of 0-1. Furthermore, in embodiments, A may comprise a tetravalent cation. The embodiment may comprise one or more of silicon, titanium, and germanium. In further embodiments, X may comprise a monovalent anion, at least comprising fluorine. 2024PF80286

[0207] 42

[0208] The luminescent material may be configured in the reflective mode or in the transmissive mode. In the transmissive mode, it may be relatively easy to have light source light admixed in the luminescent material light, which may be useful for generating the desirable spectral power distribution. In the reflective mode, thermal management may be more easy, as a substantial part of the luminescent material may be in thermal contact with a thermally conductive element, like a heatsink or heat spreader. In the reflective mode, a part of the light source light may in embodiments be reflected by the luminescent material and / or a reflector and may be admixed in the luminescent material light. The reflector may be configured downstream of the luminescent material (in the reflective mode). In the reflective mode, a dichroic reflector may be used, to promote the luminescent material light over the device light. The former may be transmitted with a higher transmission than the latter and the latter may be reflected with a higher reflection than the former.

[0209] Embodiment I of Fig. 2b schematically depicts a transmissive configuration of the luminescent material 200. Fig. 2b, embodiment II schematically depicts a reflective mode. Here, a multichroic, like dichroic, beam splitter 520 may be configured to direct first device light 111 and / or second device light 121, received by the dichroic beam splitter 520, in an optical path to the luminescent material 200. Further, the dichroic beam splitter 520 may be configured to direct luminescent material light 201, received by the multichroic beam splitter 520, in an optical path to the light exit 1090. Referring to embodiment II of Fig. 2b, in a colinear diffuser arrangement, a collimator may be applied to focus device light on the luminescent material 200 and to collimate luminescent material light 201 propagating away from the luminescent material 200.

[0210] Fig. 2c schematically depicts an embodiments of the light generating system 1000, wherein the arrangement light 2001 may be used as such, without further diffusion and / or conversion.

[0211] Fig. 2d schematically depicts the arrangement 2000 in a light arrangement 1000, without additional sources of light. As indicated above, in embodiments the light generating system 1000 may further comprise a third light generating device 130. In further embodiments, the third light generating device 130 may be configured to generate third device light 131 having a third centroid wavelength Zc3. Moreover, in embodiments, |Ac3- kcl |> 10 nm, such as at least differing 20 nm. Moreover, in embodiments, |Zc3-kc2|>l 0 nm, such as at least differing 20 nm. 2024PF80286

[0212] 43

[0213] In a colinear diffuser arrangement, as schematically depicted in Fig. 2d a collimator (not depicted) may be applied to focus device light on the diffuser 710 and to collimate diffused device light propagating away from the diffuser 710.

[0214] Here, by way of example two different types of third light generating devices

[0215] 130 are schematically depicted, indicated with references 130, and its device light 131, and 130, with its light 131’. Further, analogously to Fig. 2a, embodiment II, reflective arrangements are chosen, with the (first) reflective diffuser arrangement 1700, as also shown in Fig. 2b, embodiment II, a second reflective diffuser arrangement 1700, indicated with reference 1700’, and its polarization maintaining diffuser 700’, downstream of the third light generating device 130. Yet, a second third light generating device 130, with its device light

[0216] 131 is applied, with downstream thereof a third reflective diffuser arrangement 1700, indicated with reference 1700”, and its polarization maintaining diffuser 700”.

[0217] Several options may be possible to combine the sources of light. Here, by way of example a polarization based combination is used, wherein references 590 indicate retarders comprising X / 2 plates. However, multichroic, like dichroic, combination may also be possible. Also a combination of different combination options may also be applied. Further note that there can be a single type of third light generating device be used, or more than one, like schematically depicted in Fig. 2d. In such embodiments, the centroid wavelengths may especially differ at least 10 nm, such as at least about 20 nm (which would thus also allow the use of multichroics, like dichroics).

[0218] Fig. 3 schematically depicts an embodiment of a luminaire 2 comprising the light generating system 1000 as described above. Reference 301 indicates a user interface which may be functionally coupled with the control system 300 comprised by or functionally coupled to the light generating system 1000. Fig. 3 also schematically depicts an embodiment of lamp 1 comprising the light generating system 1000. Reference 3 indicates a projector device or projector system, which may be used to project images, such as at a wall, which may also comprise the light generating system 1000. Hence, Fig. 3 schematically depicts embodiments of a lighting device 1200 selected from the group of a lamp 1, a luminaire 2, a projector device 3, a disinfection device, a photochemical reactor, and an optical wireless communication device, comprising the light generating system 1000 as described herein. In embodiments, such lighting device may be a lamp 1, a luminaire 2, a projector device 3, a disinfection device, or an optical wireless communication device. Lighting device light escaping from the lighting device 1200 is indicated with reference 1201. Lighting device light 1201 may essentially consist of system light 1001, and may in specific embodiments 2024PF80286

[0219] 44 thus be system light 1001. Reference 1300 refers to a space, such as a room. Reference 1305 refers to a floor and reference 1310 to a ceiling; reference 1307 refers to a wall. Fig. 3 also schematically depicts embodiments of an outdoor light, or stage light, or stadium light. Fig. 3 also schematically depicts a vehicle, like an automobile, but this may also be a truck, a motor cycle, etc. etc., with automotive lighting 4, e.g. headlights. These automotive lighting 4 may also comprise the lighting device 1200.

[0220] The term “plurality” refers to two or more. The terms “substantially” or “essentially” herein, and similar terms, will be understood by the person skilled in the art. The terms “substantially” or “essentially” may also include embodiments with “entirely”, “completely”, “all”, etc. Hence, in embodiments the adjective substantially or essentially may also be removed. Where applicable, the term “substantially” or the term “essentially” may also relate to 90% or higher, such as 95% or higher, especially 99% or higher, even more especially 99.5% or higher, including 100%. The term “comprise” also includes embodiments wherein the term “comprises” means “consists of’. The term “and / or” especially relates to one or more of the items mentioned before and after “and / or”. For instance, a phrase “item 1 and / or item 2” and similar phrases may relate to one or more of item 1 and item 2. The term "comprising" may in an embodiment refer to "consisting of but may in another embodiment also refer to "containing at least the defined species and optionally one or more other species". Use of the verb "to comprise" and its conjugations does not exclude the presence of elements or steps other than those stated in a claim. Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise”, “comprising”, and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to”. The article "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. Furthermore, the terms first, second, third and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other sequences than described or illustrated herein.

[0221] The devices, apparatus, or systems may herein amongst others be described during operation. As will be clear to the person skilled in the art, the invention is not limited to methods of operation, or devices, apparatus, or systems in operation. 2024PF80286

[0222] 45

[0223] It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design many alternative embodiments without departing from the scope of the appended claims.

[0224] In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

[0225] The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In a device claim, or an apparatus claim, or a system claim, enumerating several means, several of these means may be embodied by one and the same item of hardware. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. In yet a further aspect, the invention (thus) provides a software product, which, when running on a computer is capable of bringing about (one or more embodiments of) the method as described herein.

[0226] The invention also provides a control system that may control the device, apparatus, or system, or that may execute the herein described method or process. Yet further, the invention also provides a computer program product, when running on a computer which is functionally coupled to or comprised by the device, apparatus, or system, controls one or more controllable elements of such device, apparatus, or system.

[0227] The invention further applies to a device, apparatus, or system comprising one or more of the characterizing features described in the description and / or shown in the attached drawings. The invention further pertains to a method or process comprising one or more of the characterizing features described in the description and / or shown in the attached drawings.

[0228] The various aspects discussed in this patent can be combined in order to provide additional advantages. Further, the person skilled in the art will understand that embodiments can be combined, and that also more than two embodiments can be combined. Furthermore, some of the features can form the basis for one or more divisional applications.

Claims

2024PF8028646CLAIMS:

1. A light generating system (1000) comprising a lighting arrangement (2000); wherein: the lighting arrangement (2000) comprises an array (2100) of semiconductorbased light generating devices (100), a deflection arrangement (2400), and a lens arrangement (2600); the array (2100) of semiconductor-based light generating devices (100) comprises a plurality of first light generating devices (110) and a plurality of second light generating devices (120); wherein the semiconductor-based light generating devices (100) are selected from the group of laser diodes, superluminescent diodes, and multi -junction diodes; the plurality of first light generating devices (110) are top-emitting light generating devices; wherein the plurality of first light generating devices (110) are configured to generate first device light (111) having a first optical axis (01) and having a first centroid wavelength Xcl; the plurality of second light generating devices (120) are side-emitting light generating devices; wherein the plurality of second light generating devices (120) is configured to generate second device light (121) having a second optical axis (02) and having a second centroid wavelength Xc2; the plurality of first light generating devices (110) and the plurality of second light generating devices (120) are configured such that the optical axes (01,02) of the first and second device light (111,121) upon escape from the light generating devices (110,120) are non-parallel; and wherein |Xc2-Xcl |>10 nm; the lens arrangement (2600) is configured downstream of the plurality of first light generating device (110), the second light generating device (120), and the deflection arrangement (2400); wherein the lens arrangement (2600) is configured to collimate the first device light (111) and the second device light (121); the lighting arrangement (2000) is configured to generate arrangement light (2001) comprising one or more of the first device light (111) and second device light (121); the deflection arrangement (2400) comprises a plurality of deflection elements (2405) configured downstream and in light receiving relationships with the plurality of second light generating devices (120); wherein the deflection arrangement (2400), the2024PF8028647 plurality of first light generating devices (110) and the plurality of second light generating devices (120) are configured such that the optical axes (01,02) of the first device light (111) and second device light (121), upon escape from the lighting arrangement (2000), are parallel; and the lens arrangement (2600) comprises an array of lenses comprising (a) first lenses (2610) configured in a light receiving relationship with the first light generating devices (110), and (b) second lenses (2620) configured in light receiving relationships with the deflection elements (2405); and wherein the first lenses (2610) and the second lenses (2620) have different shapes.

2. The light generating system (1000) according to claim 1, wherein: (a) the plurality of first light generating devices (110) and the plurality of second light generating devices (120) are configured such that the optical axes (01,02) of the first and second device light (111,121), upon escape from the light generating devices (110,120), have a first mutual angle (al) selected from the range of 85-95°; (b) the deflection arrangement (2400), the plurality of first light generating devices (110) and the plurality of second light generating devices (120) are configured such that the optical axes (01,02) of the first device light (111) and second device light (121), upon escape from the lighting arrangement (2000), have a second mutual angle (a2) selected from the range of 0-2°; and (c) the plurality of first light generating devices (110) and the plurality of second light generating devices (120) comprise a laser diode.

3. The light generating system (1000) according to any one of the preceding claims, further comprising a support (2200), configured to support the first light generating device (110) and the second light generating device (120) and the deflection arrangement (2400); wherein the support (2200) has a support cross-sectional plane (P), wherein the first optical axis (01), upon escape of the first device light (111) from the plurality of first light generating devices (110), is configured perpendicular to the support cross-sectional plane (P), and wherein the second optical axis (02), upon escape of the second device light (121) from the plurality of second light generating devices (120), is configured parallel to the support cross-sectional plane (P).

4. The light generating system (1000) according to any one of the preceding claims, wherein the deflection arrangement (2400) is configured to deflect second device2024PF8028648 light (121) received from the plurality of second light generating devices (120) in a direction parallel to the first optical axis (01); and wherein the deflection arrangement (2400) comprises a specular reflector (2405).

5. The light generating system (1000) according to any one of the preceding claims, wherein the plurality of first light generating devices (110) comprises a Vertical- Cavity Surface-Emitting Laser diode (VCSEL); and wherein the plurality of second light generating devices (120) comprises one or more of a Fabry-Perot laser diode, a Distributed Feedback (DFB) Laser Diode, a Quantum Cascade Laser (QCL) Diode, and an External Cavity Laser (ECL) Diode.

6. The light generating system (1000) according to any one of the preceding claims, wherein the first centroid wavelength kc l is selected from the wavelength range of 620-1320 nm, and wherein the second centroid wavelength Zc2 is selected from the wavelength range of 380-600 nm.

7. The light generating system (1000) according to any one of the preceding claims, wherein the plurality of deflection elements (2405) is not configured downstream of the plurality of first light generating devices (110), such that the second device light (121) is configured to escape the lighting arrangement (2000) via a second optical path including the deflection arrangement (2400), and such the first device light (111) is configured to escape the lighting arrangement (2000) via a first optical path not including the deflection arrangement (2400).

8. The light generating system (1000) according to any one of the preceding claims, wherein the first device light (111), upon escape from the plurality of first light generating devices (110), has a circular cross-sectional beam shape; wherein the second device light (121), upon escape from the plurality of second light generating devices (120), has an elliptical cross-sectional beam shape; wherein the lens arrangement (2600) is configured to transform the second device light (121) into collimated second device light (121) transmitted by the lens arrangement (2600) having a cross-sectional beam shape that is less elliptical compared to the second device light (121) received by the lens arrangement (2600) or is circular.2024PF80286499. The light generating system (1000) according to any one of the preceding claims, further comprising a diffuser arrangement (1700); wherein the diffuser arrangement (1700) is configured to convert the first device light (111) from the lighting arrangement (2000) into diffused first device light (111) and / or to convert the second device light (121) from the lighting arrangement (2000) into diffused second device light (121).

10. The light generating system (1000) according to any one of the preceding claims, further comprising a luminescent material (200); wherein the luminescent material (200) is configured to at least partly convert one or more the first device light (111) from the lighting arrangement (2000) and the second device light (121) from the lighting arrangement (2000) into luminescent material light (201).

11. The light generating system (1000) according claim 10, wherein the luminescent material (200) comprises one or more of (a) a luminescent material of the type AsBsOn Ce, wherein A comprises one or more of Y, La, Gd, Tb and Lu, and wherein B comprises one or more of Al, Ga, In and Sc, and (b) a luminescent material selected from the types of a divalent europium comprising nitride luminescent material and a divalent europium comprising oxynitride luminescent material, and (c) a luminescent material of the type M’xM2-2xAX6:Mn4+, wherein M’ comprises an alkaline earth cation, M comprises a monovalent cation, and x is in the range of 0-1, wherein A comprises a tetravalent cation, comprising one or more of silicon, titanium, and germanium, wherein X comprises a monovalent anion, at least comprising fluorine.12 The light generating system (1000) according to any one of the preceding claims, wherein the light generating system (1000) is configured to generate system light (1001); wherein in an operational mode of the light generating system (1000): (a) the system light (1001) is white light comprising at least two of: (al) the diffused first device light (111) as defined in claim 9; (a2) the diffused second device light (121) as defined in claim 9; and (a3) the luminescent material light (201) as defined in claim 10; and (b) the system light (1001) has a correlated color temperature selected from the range of 1500-12000 K and a color rendering index of at least 65.

13. The light generating system (1000) according to any one of the preceding claims, wherein: (a) the light generating system (1000) further comprises a control system2024PF8028650(300); wherein the control system (300) is configured to control a spectral power distribution of the system light (1001) as defined in claim 12 by individually controlling the plurality of first light generating devices (110) and the plurality of second light generating devices (120); and (b) the light generating system (1000) comprises a laser bank (105); wherein the laser bank (105) comprises the plurality of first light generating devices (110) and the plurality of second light generating devices (120); wherein each of the plurality of first light generating devices (110) and the plurality of second light generating devices (120) comprises a plurality of laser diodes.

14. The light generating system (1000) according to claim 13, wherein the array(2100) of semiconductor-based light generating devices (100) comprises NxM semiconductor-based light generating devices (100), wherein N>3 and wherein M>3.

15. A lighting device (1200) selected from the group of a lamp (1), a luminaire (2), a projector device (3), a lighting fixture, an automotive lighting device, and an entertainment lighting device, comprising the light generating system (1000) according to any one of the preceding claims.

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