Defect inspection method and defect inspection device
The defect inspection method for silicon carbide substrates uses PL imaging and threshold-based analysis to efficiently detect defects by integrating pixel brightness and recognizing defect shapes, addressing inefficiencies in existing methods.
Patent Information
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- ITES CO LTD
- Filing Date
- 2025-11-12
- Publication Date
- 2026-06-18
AI Technical Summary
Existing defect inspection methods for silicon carbide substrates are inefficient due to high data processing requirements, leading to prolonged inspection times, especially when dealing with large numbers of pixels.
A defect inspection method and apparatus that utilizes photoluminescence (PL) imaging, integrating pixel brightness values by rows and columns, and threshold-based determination to identify defects, followed by aspect ratio analysis and shape recognition to differentiate between completed and expanded stacking faults.
Enables efficient detection of defects in silicon carbide substrates by reducing data processing and identifying potential expanded defects quickly, thus improving inspection speed and accuracy.
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