Laser machining device, substrate processing system, and laser machining method

Abstract

This laser machining device irradiates, with a first laser beam, a first planned peeling surface, which is set at an interface between a first substrate and a second substrate that are bonded to each other. The laser machining device includes: a holding unit that holds a combined substrate formed from the first substrate and the second substrate; an irradiation unit that irradiates a first planned peeling surface of the combined substrate held by the holding unit with the first laser beam; a moving unit that moves the holding unit and the irradiation unit relative to each other such that a plurality of irradiation points of the first laser beam are formed at intervals on the first planned peeling surface; an imaging unit that captures an image of the first planned peeling surface of the combined substrate held by the holding unit using infrared rays; and a control circuit. The control circuit determines, on the basis of an infrared image captured by the imaging unit after the irradiation with the first laser beam, whether a reduction in a peeling force on the first planned peeling surface is satisfactory.

Description

Laser processing apparatus, substrate processing system, and laser processing method 【0001】 The present disclosure relates to a laser processing apparatus, a substrate processing system, and a laser processing method. 【0002】 In Patent Document 1, in a polymerized substrate in which a first substrate and a second substrate are joined, a reforming layer forming apparatus that forms a reforming layer inside the first substrate along the boundary between the peripheral portion and the central portion of the first substrate to be removed, and a peripheral removing apparatus that removes the peripheral portion of the first substrate with the reforming layer as a base point are disclosed. 【0003】 International Publication No. 2019 / 176589 【0004】 One embodiment of the present disclosure provides a technique for continuously performing laser irradiation and inspection while holding a polymerized substrate with a holding unit. 【0005】 A laser processing apparatus according to an embodiment of the present disclosure irradiates a first laser beam onto a first peeling planned surface set at the interface between a first substrate and a second substrate joined to each other. The laser processing apparatus includes a holding unit that holds a polymerized substrate composed of the first substrate and the second substrate, an irradiation unit that irradiates the first laser beam onto the first peeling planned surface of the polymerized substrate held by the holding unit, a moving unit that relatively moves the holding unit and the irradiation unit so that a plurality of irradiation points of the first laser beam are formed at intervals on the first peeling planned surface, an imaging unit that images the first peeling planned surface of the polymerized substrate held by the holding unit with infrared rays, and a control circuit. The control circuit determines whether or not the peeling force on the first peeling planned surface has decreased based on an infrared image captured by the imaging unit after irradiation of the first laser beam. 【0006】 According to one embodiment of the present disclosure, laser irradiation and inspection can be continuously performed while holding a polymerized substrate with a holding unit. 【0007】Figure 1 is a plan view showing an example of a substrate processing system. Figure 2 is a cross-sectional view showing an example of a polymerized substrate. Figure 3 is a plan view showing an example of a polymerized substrate. Figure 4 is a flowchart showing an example of a substrate processing method. Figure 5 is a cross-sectional view showing an example of a substrate processing method. Figure 6 is a side view showing an example of a laser processing apparatus. Figure 7 is a plan view showing an example of a laser processing apparatus. Figure 8(8) shows an example of an infrared image obtained when the reduction in peeling force is good, and Figure 8(B) shows an example of an infrared image obtained when the reduction in peeling force is poor. Figure 9 is a flowchart showing an example of the processing of the control circuit of the laser processing apparatus. Figure 10 is a flowchart showing a modified example of the processing shown in Figure 9. Figure 11 is a plan view showing an example of the difference in the position of the irradiation point in steps S203 and S208. Figure 12 shows an example of a clustering group. 【0008】 Embodiments of this disclosure will be described below with reference to the drawings. In each drawing, identical or similar components are denoted by the same reference numerals, and their descriptions may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal, and the Z-axis direction is vertical. 【0009】 The X-axis direction includes the positive X-axis direction and the negative X-axis direction, which is the opposite direction to the positive X-axis direction. The Y-axis direction includes the positive Y-axis direction and the negative Y-axis direction, which is the opposite direction to the positive Y-axis direction. The Z-axis direction includes the positive Z-axis direction and the negative Z-axis direction, which is the opposite direction to the positive Z-axis direction. The positive Z-axis direction is upward, and the negative Z-axis direction is downward. 【0010】 Next, a substrate processing system 1 according to one embodiment will be described with reference to Figures 1 to 5. As shown in Figure 5, the substrate processing system 1 divides and removes the peripheral portion W1a of the first substrate W1, which is joined to the second substrate W2, into a plurality of scraps in the circumferential direction of the first substrate W1. After that, the first substrate W1 is thinned. 【0011】The peripheral edge W1a of the first substrate W1 has a bevel. When the first substrate W1 is thinned, the peripheral edge W1a of the first substrate W1 takes on a shape called a knife edge, making the first substrate W1 prone to chipping. The substrate processing system 1 removes the peripheral edge W1a of the first substrate W1 before thinning the first substrate W1. 【0012】 The first substrate W1 is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. As shown in Figure 2, the first device layer D1 and the first bonding layer E1 are formed in this order on the surface of the first substrate W1 facing the second substrate W2 before bonding. The first device layer D1 includes an electronic circuit. The first bonding layer E1 is, for example, an oxide layer, preferably a silicon oxide layer. The oxide layer is formed by thermal oxidation, CVD (Chemical Vapor Deposition), or ALD (Atomic Layer Deposition). When forming the silicon oxide layer by the CVD method, TEOS (Tetra Ethoxy Silane) is used as the raw material for the silicon oxide layer. The first bonding layer E1 may also be a nitride layer or a carbide layer. 【0013】 The second substrate W2 is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. On the surface of the second substrate W2 facing the first substrate W1, a second device layer D2 and a second bonding layer E2 are formed in this order before bonding. The second device layer D2 includes an electronic circuit. The second bonding layer E2 is, for example, an oxide layer, preferably a silicon oxide layer. The second bonding layer E2 may also be a nitride layer or a carbide layer, etc. 【0014】 The polymerization substrate W includes, for example, a first substrate W1, a first device layer D1, a first bonding layer E1, a second bonding layer E2, a second device layer D2, and a second substrate W2 in this order. The polymerization substrate W only needs to include at least the first substrate W1 and the second substrate W2. For example, the polymerization substrate W does not need to have the second device layer D2. 【0015】The polymerized substrate W has a first peel-off surface F1, as shown in Figure 2. The first peel-off surface F1 is, for example, a ring-shaped plane. The first peel-off surface F1 is set at the peripheral edge of the interface between the first substrate W1 and the second substrate W2, which are joined together. For example, the first peel-off surface F1 is set at the interface between the peripheral edge W1a of the first substrate W1 and the first device layer D1. Note that the first peel-off surface F1 only needs to be set between the first substrate W1 and the second substrate W2, and may be formed, for example, at the interface between the first bonding layer E1 and the second bonding layer E2, or at the interface between the second device layer D2 and the second substrate W2. 【0016】 The polymerized substrate W has a second peeling surface F2, as shown in Figure 3. The second peeling surface F2 is, for example, a cylindrical surface. The second peeling surface F2 is the surface on which the first substrate W1 is to be peeled radially into a central portion W1b and a peripheral portion W1a. The width of the peripheral portion W1a is, for example, 0.5 mm to 3 mm. 【0017】 Furthermore, the polymerized substrate W has a third peeling surface F3, as shown in Figure 3. The third peeling surface F3 is a plane that extends radially from the second peeling surface F2 to the periphery of the first substrate W1. Multiple third peeling surfaces F3 are set at intervals in the circumferential direction of the first substrate W1. Although there are eight third peeling surfaces F3 in Figure 3, there can be two or more, and the number is not particularly limited. 【0018】 The substrate processing system 1 separates the peripheral portion W1a of the first substrate W1 from the second substrate W2 on the first peeling surface F1, and separates the peripheral portion W1a from the central portion W1b of the first substrate W1 on the second peeling surface F2. In addition, the substrate processing system 1 divides the peripheral portion W1a of the first substrate W1 into multiple scraps on the third peeling surface F3. 【0019】 As shown in Figure 1, the substrate processing system 1 comprises an input / output station 2, a processing station 3, and a control circuit 9. The input / output station 2 and the processing station 3 are arranged in this order, from the negative side in the X-axis direction to the positive side in the X-axis direction. 【0020】The loading / unloading station 2 comprises a mounting table 20, a second transport area 21, and a second transport device 22. Multiple cassettes C1 to C3 are placed on the mounting table 20. Each cassette C1 to C3 contains a polymerized substrate W. Cassette C1 contains the polymerized substrate W before a series of processing is carried out. Cassette C2 contains the polymerized substrate W after a series of processing is carried out. Cassette C3 contains the polymerized substrate W whose processing was interrupted midway through the series of processing. 【0021】 The second transport area 21 is adjacent to the mounting table 20 and the transition device 33 of the processing station 3. The second transport device 22 transports substrates between multiple devices adjacent to the second transport area 21. The second transport device 22 has a transport arm that holds the superimposed substrate W and a drive unit that moves or rotates the transport arm. The transport arm is capable of moving horizontally (both in the X-axis and Y-axis directions) and vertically, and rotating about the vertical axis. Multiple transport arms may be provided. 【0022】 The processing station 3 includes, for example, a first transport area 31, a first transport device 32, a transition device 33, a laser processing device 34, a second laser processing device 35, a removal device 36, and a cleaning device 37. The arrangement and number of devices constituting the processing station 3 are not limited to those shown in Figure 1. 【0023】 The first transport area 31 is adjacent to the transition device 33, the laser processing device 34, the second laser processing device 35, the removal device 36, and the cleaning device 37. The first transport device 32 transports substrates between multiple devices adjacent to the first transport area 31. The first transport device 32 has a transport arm that holds the superimposed substrate W, and a drive unit that moves or rotates the transport arm. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically, and rotating about the vertical axis. Multiple transport arms may be provided. 【0024】The transition device 33 relays the polymerized substrate W between the second transport device 22 of the loading / unloading station 2 and the first transport device 32 of the processing station 3. The transition device 33 for relaying from the second transport device 22 to the first transport device 32 and the transition device 33 for relaying from the first transport device 32 to the second transport device 22 may be provided separately. 【0025】 The laser processing apparatus 34 irradiates the first surface F1 to be peeled with a first laser beam L1. Multiple irradiation points of the first laser beam L1 are formed at intervals in the radial and circumferential directions of the first substrate W1. As shown in Figure 5, a modified layer W1c is formed at the irradiation points of the first laser beam L1 as a peeling initiation point, and adjacent modified layers W1c are connected by cracks W1d. This reduces the peeling force on the first surface to be peeled. Multiple laser processing apparatuses 34 may be provided. 【0026】 The second laser processing apparatus 35 irradiates the second peeling target surface F2 with a second laser beam. Multiple irradiation points of the second laser beam are formed at intervals in the circumferential and thickness directions of the first substrate W1. As shown in Figure 5, a modified layer W1e is formed at the irradiation points of the second laser beam as a peeling initiation point, and adjacent modified layers W1e are connected by cracks W1f. This reduces the peeling force on the second peeling target surface F2. Multiple second laser processing apparatuses 35 may be provided. The second laser beam can also serve as the third laser configuration described later. 【0027】 Furthermore, the second laser processing apparatus 35 irradiates the third peeling target surface F3 with a third laser beam. Multiple irradiation points of the third laser beam are formed at intervals in the radial and thickness directions of the first substrate W1. As shown in Figure 5, a modified layer W1g is formed at the irradiation points of the third laser beam as a peeling initiation point, and adjacent modified layers W1g are connected by cracks W1h. This reduces the peeling force on the third peeling target surface F3. 【0028】 The substrate processing system 1 may also include a third laser processing device in addition to the second laser processing device 35. The third laser processing device may irradiate the third peeling surface F3 with a third laser beam. 【0029】Furthermore, the laser processing device 34 can also function as both the second laser processing device 35 and the third laser processing device. Therefore, the first laser beam L1 can also function as both the second laser beam and the third laser beam. The substrate processing system 1 does not necessarily need to include the second laser processing device 35 and the third laser processing device. 【0030】 The removal device 36 applies an impact to the first surface to be peeled F1 after it has been irradiated with the first laser beam L1 by the laser processing device 34, thereby removing the peripheral portion W1a of the first substrate W1. The removal device 36 removes the peripheral portion W1a of the first substrate W1 by, for example, inserting a blade into the first surface to be peeled F1. A nozzle may be used instead of, or in addition to, the blade. The nozzle sprays a fluid such as gas or water. Multiple removal devices 36 may be provided. 【0031】 The cleaning device 37 cleans the polymerization substrate W. The cleaning device 37 cleans the polymerization substrate W after, for example, the peripheral portion W1a of the first substrate W1 has been removed by the removal device 36, and washes off any particles adhering to the polymerization substrate W. Multiple cleaning devices 37 may be provided. 【0032】 The control circuit 9 is, for example, a computer and comprises an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores programs that control various processes executed in the board processing system 1. The control circuit 9 controls the operation of the board processing system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. 【0033】 Each device constituting the substrate processing system 1 may be provided with a lower-level control circuit to control the operation of the device, and a higher-level control circuit may be provided to comprehensively control multiple lower-level control circuits. The control circuit 9 may be composed of the lower-level control circuit and the higher-level control circuit. 【0034】The control circuit 9 includes electronic circuits such as a CPU, GPU (Graphics Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit). The control circuit 9 performs the various control operations described in this specification by executing instruction codes stored in a storage medium such as memory, or by being designed as a circuit for a special application. 【0035】 The operation of the substrate processing system 1 will be explained again with reference to Figures 4 and 5. The substrate processing system 1 performs steps S101 to S104 shown in Figure 4. Steps S101 to S104 are performed under the control of the control circuit 9. 【0036】 First, the second transport device 22 removes the polymerized substrate W from the cassette C1 on the mounting table 20 and transports it to the transition device 33. Subsequently, the first transport device 32 of the processing station 3 removes the polymerized substrate W from the transition device 33 and transports it to the laser processing device 34. 【0037】 Next, the laser processing apparatus 34 irradiates the first peeling target surface F1 with the first laser beam L1 (step S101). As shown in Figure 5, a modified layer W1c is formed at the irradiation point of the first laser beam L1 as a peeling starting point, and adjacent modified layers W1c are connected by cracks W1d. This reduces the peeling force on the first peeling target surface. After step S101, the first transport apparatus 32 removes the polymerized substrate W from the laser processing apparatus 34 and transports it to the second laser processing apparatus 35. 【0038】 Next, the second laser processing apparatus 35 irradiates the second peeling target surface F2 with a second laser beam (step S102). As shown in Figure 5, a modified layer W1e is formed at the irradiation point of the second laser beam as a peeling starting point, and adjacent modified layers W1e are connected by cracks W1f. This reduces the peeling force on the second peeling target surface F2. 【0039】Furthermore, the second laser processing apparatus 35 irradiates the third peeling target surface F3 with a third laser beam (step S102). As shown in Figure 5, a modified layer W1g is formed at the irradiation point of the third laser beam as a peeling starting point, and adjacent modified layers W1g are connected by cracks W1h. This reduces the peeling force on the third peeling target surface F3. After step S102, the first transport apparatus 32 removes the polymerized substrate W from the second laser processing apparatus 35 and transports it to the removal apparatus 36. 【0040】 Next, the removal device 36 applies an impact to the first peeling surface F1 to remove the peripheral portion W1a of the first substrate W1 (step S103). The removal device 36 removes the peripheral portion W1a of the first substrate W1 by inserting, for example, a blade into the first peeling surface F1. A nozzle may be used instead of a blade, or in addition to a blade. After step S103, the first transport device 32 removes the polymerized substrate W from the removal device 36 and transports it to the washing device 37. 【0041】 Next, the cleaning device 37 cleans the polymerization substrate W (step S104). This washes away any particles adhering to the polymerization substrate W. After that, the first transport device 32 removes the polymerization substrate W from the cleaning device 37 and transports it to the transition device 33. Finally, the second transport device 22 removes the polymerization substrate W from the transition device 33 and stores it in the cassette C2 on the mounting table 20. 【0042】 An example of a laser processing apparatus 34 will be described with reference to Figures 6 and 7. Note that the configuration of the second laser processing apparatus 35 is the same as that of the laser processing apparatus 34, so its description will be omitted. 【0043】 The laser processing apparatus 34 includes a holding section 100. The holding section 100 holds the polymerized substrate W. The holding section 100 holds the first substrate W1 facing upwards and the second substrate W2 from below. The holding section 100 is a vacuum chuck, but it may also be an electrostatic chuck or a mechanical chuck. 【0044】The laser processing apparatus 34 includes an irradiation unit 110. The irradiation unit 110 irradiates a first laser beam L1 onto a first peeling planned surface F1 of the polymerization substrate W held by the holding unit 100. In addition to the first peeling planned surface F1, the irradiation unit 110 may irradiate the first laser beam L1 onto at least one of a second peeling planned surface F2 and a third peeling planned surface F3. 【0045】 The irradiation unit 110 has a laser oscillator 111. The laser oscillator 111 oscillates a first laser beam L1. The laser oscillator 111 is, for example, a CO ２ laser or the like. However, the wavelength of the first laser beam L1 is not particularly limited. The laser oscillator 111 is preferably a pulsed laser. 【0046】 The irradiation unit 110 has a lens 112. The lens 112 is provided, for example, above the polymerization substrate W. The lens 112 condenses the first laser beam L1 toward the first peeling planned surface F1. The condensing point of the first laser beam L1 is formed on the first peeling planned surface F1, but may be formed shifted upward or downward from the first peeling planned surface F1. 【0047】 The irradiation unit 110 may have a lifting mechanism 113. The lifting mechanism 113 raises and lowers the lens 112 to adjust the height of the condensing point of the first laser beam L1. The lifting mechanism 113 is a lifter. The lifting mechanism 113 includes a motor. 【0048】 The laser processing apparatus 34 includes a moving unit 120. The moving unit 120 relatively moves the holding unit 100 and the irradiation unit 110 so that a plurality of irradiation points of the first laser beam L1 are formed at intervals on the first peeling planned surface F1. The moving unit 120 has, for example, a rotational moving unit 121 and a horizontal moving unit 122. 【0049】 The rotational moving unit 121 rotates the holding unit 100 about a vertical rotation axis to move the irradiation point of the first laser beam L1 in the circumferential direction of the first substrate W1. The horizontal moving unit 122 moves the holding unit 100 in the horizontal direction to move the irradiation point of the first laser beam L1 in the radial direction of the first substrate W1. The rotational moving unit 121 and the horizontal moving unit 122 each include a motor. 【0050】The moving part 120 may have a vertical moving part (not shown). The vertical moving part moves the holding part 100 in the vertical direction, thereby moving the irradiation point of the first laser beam L1 in the thickness direction of the first substrate W1. The vertical moving part is used when irradiating at least one of the second peeling target surface F2 and the third peeling target surface F3 with the first laser beam L1. The vertical moving part includes a motor. 【0051】 Furthermore, the moving unit 120 may move the irradiation unit 110 instead of the holding unit 100, or in addition to the holding unit 100. Therefore, for example, a lifting mechanism 113 for the irradiation unit 110 may be used instead of the vertical moving unit, or in addition to the vertical moving unit. 【0052】 As shown in Figure 7, the laser processing apparatus 34 includes an imaging unit 130. The imaging unit 130 is provided, for example, above the polymerized substrate W. The imaging unit 130 images the first peeling target surface F1 of the polymerized substrate W, which is held by the holding unit 100, with infrared light. Infrared light penetrates the first substrate W1. Therefore, laser irradiation and inspection can be carried out continuously while the polymerized substrate W is held by the holding unit 100. 【0053】 The imaging unit 130 may image the entire circumferential direction of the peripheral edge W1a of the first substrate W1. The rotating movement unit 121 rotates the holding unit 100, allowing the imaging unit 130 to image the entire circumferential direction of the peripheral edge W1a of the first substrate W1. The imaging unit 130 may also image only a portion of the circumferential direction of the peripheral edge W1a of the first substrate W1. 【0054】 As shown in Figure 7, the imaging unit 130 includes, for example, at least one camera 131 and a light source 132. The camera 131 has a plurality of photodetectors that receive infrared light. The light source 132 irradiates the first peeling target surface F1 with infrared light. The wavelength of the infrared light is, for example, 900 nm to 1100 nm. Both the camera 131 and the light source 132 may be provided above the polymerized substrate W. The camera 131 receives infrared light reflected from the first peeling target surface F1 or the like. 【0055】The laser processing apparatus 34 is equipped with a control circuit 190. The control circuit 190 is configured in the same way as the control circuit 9. The control circuit 190 is, for example, a computer and is equipped with an arithmetic unit such as a CPU (Central Processing Unit) and a storage unit such as memory. The storage unit stores programs that control various processes performed in the laser processing apparatus 34. The control circuit 190 controls the operation of the laser processing apparatus 34 by causing the arithmetic unit to execute the programs stored in the storage unit. Note that the control circuit 190 may be part of the control circuit 9. 【0056】 Referring to Figure 8, an example of an infrared image 200 captured by the imaging unit 130 will be described. Figure 8(A) is an infrared image 200 obtained when the reduction in peeling force due to irradiation with the first laser beam L1 is good. Figure 8(B) is an infrared image 200 obtained when the reduction in peeling force due to irradiation with the first laser beam L1 is poor. 【0057】 As shown in Figure 8(A), when the reduction in peeling force is good, the brightness of the first peeling target surface F1 is lower compared to when the reduction in peeling force is poor, as shown in Figure 8(B). The reason for the lower brightness is that the heat generated by the irradiation of the first laser beam L1 alters the first peeling target surface F1, making it more susceptible to absorbing infrared rays. The modified layer W1c is the most altered, and therefore the brightness of the modified layer W1c is the lowest. 【0058】 If the reduction in peeling force is satisfactory, the peripheral W1a of the first substrate W1 and the second substrate W2 will be separated at the first peeling surface F1 in step S103. On the other hand, if the reduction in peeling force is unsatisfactory, the peripheral W1a of the first substrate W1 and the second substrate W2 will not be separated at the first peeling surface F1 in step S103. 【0059】 Referring to Figure 9, an example of the processing of the control circuit 190 of the laser processing apparatus 34 will be described. Steps S201 to S210 shown in Figure 9 are performed under the control of the control circuit 190. First, the first transport device 32 transports the polymerized substrate W into the laser processing apparatus 34 (step S201). 【0060】Next, the holding unit 100 holds the polymer substrate W (step S202). Subsequently, the irradiation unit 110 irradiates the first peeling surface F1 of the polymer substrate W held by the holding unit 100 with the first laser beam L1 (step S203). In step S203, the moving unit 120 moves the holding unit 100 and the irradiation unit 110 relative to each other so that multiple irradiation points of the first laser beam L1 are formed at intervals on the first peeling surface F1. 【0061】 Next, the imaging unit 130 captures an infrared image of the first peeling target surface F1 of the polymer substrate W held by the holding unit 100 (step S204). Subsequently, the control circuit 190 determines whether the reduction in peeling force on the first peeling target surface F1 is good or bad based on the infrared image 200 captured by the imaging unit 130 (step S205). 【0062】 In step S205, the control circuit 190 makes a determination based on, for example, the proportion of the first region to the first peeling target surface F1 in the infrared image 200. The first region is a region in the infrared image 200 whose brightness ratio to the background is less than or equal to a first threshold. The background is the region excluding the first peeling target surface F1, and is, for example, the region inside or outside the ring-shaped first peeling target surface F1. The brightness ratio to the background is the value obtained by dividing the brightness of each pixel of the first peeling target surface F1 by the brightness of the background. If the ratio is greater than or equal to a second threshold, the entire first peeling target surface F1 has been sufficiently altered, and the reduction in peeling force is good. On the other hand, if the ratio is less than a second threshold, the reduction in peeling force is poor. 【0063】 In step S205, the control circuit 190 may use a machine learning model to determine whether the reduction in peeling force on the first peeling target surface F1 is good or bad. The model is, for example, a machine learning model that uses training data linking (A) infrared image 200 and (B) the quality of the reduction in peeling force. 【0064】Machine learning is performed, for example, using neural networks and backpropagation. Machine learning algorithms include, for example, SVM (Support Vector Machine) or Random Forest. Programming languages ​​used for machine learning include, for example, Python 3.12.2, scikit-learn 1.4.2, and OpenCV 4.9.0. However, the machine learning algorithms and programming languages ​​used are not particularly limited; any well-known ones are acceptable. 【0065】 The control circuit 190 can output whether the reduction in peeling force is good or bad by inputting the infrared image 200 into a machine learning model. If a human were to judge whether the reduction in peeling force is good or bad by looking at the infrared image 200 with their own eyes, the number of people who can make that judgment would be limited. By using a machine learning model, the risk of relying on a specific person to make the judgment can be reduced. 【0066】 The model may be a machine learning model that uses training data linking (A) infrared image 200, (B) the quality of the reduction in peeling force, and (C) the appropriateness of the irradiation intensity of the first laser beam. The control circuit 190 outputs the quality of the reduction in peeling force and the appropriateness of the irradiation intensity by inputting the infrared image 200 into the machine learning model. The appropriateness of the irradiation intensity can be determined. 【0067】 The stronger the irradiation intensity of the first laser beam, the more easily the modified layer W1c absorbs infrared radiation, resulting in a lower brightness of the modified layer W1c in the infrared image 200. If the irradiation intensity of the first laser beam is too weak or too strong, a local temperature gradient is less likely to occur on the first peeling target surface F1, and cracks W1d are less likely to form. Therefore, if the irradiation intensity of the first laser beam is too weak or too strong, a decrease in peeling force will occur. 【0068】 The control circuit 190 will change the irradiation intensity setting for subsequent uses if it determines that the irradiation intensity is inappropriate. This is useful for determining the irradiation conditions for the first laser beam L1. After the conditions have been determined and mass production has started, the control circuit 190 may determine that there is a problem with the irradiation unit 110 if it determines that the irradiation intensity is inappropriate. 【0069】The model may be a machine learning model that uses training data linking (A) infrared image 200, (B) the quality of the reduction in peeling force, and (D) the suitability of the pitch of the irradiation point. The control circuit 190 inputs the infrared image 200 to the machine learning model and outputs the quality of the reduction in peeling force and the suitability of the pitch. The suitability of the pitch can be determined. 【0070】 The narrower the pitch of the irradiation points, the narrower the pitch of the modified layer W1c in the infrared image 200. If the pitch of the irradiation points is too narrow or too wide, a local temperature gradient is less likely to occur on the first peeling target surface F1, and cracks W1d are less likely to form. Therefore, if the pitch of the irradiation points is too narrow or too wide, a poor reduction in peeling force will occur. 【0071】 The control circuit 190 will change the pitch of the irradiation points in subsequent cycles if it determines that the pitch of the irradiation points is not appropriate. This is useful for determining the irradiation conditions of the first laser beam L1. After the conditions have been determined and mass production has started, the control circuit 190 may determine that there is a problem with the moving part 120 if it determines that the pitch of the irradiation points is not appropriate. 【0072】 The model may be a machine learning model that uses training data linking (A) infrared image 200, (B) the quality of the reduction in peeling force, (C) the appropriateness of the irradiation intensity of the first laser beam, and (D) the appropriateness of the pitch of the irradiation point. The control circuit 190 may output the quality of the reduction in peeling force, the appropriateness of the irradiation intensity, and the appropriateness of the pitch by inputting the infrared image 200 into the machine learning model. 【0073】 It is preferable to use training data obtained by grouping multiple infrared images 200 through clustering. The clustering algorithm can be, for example, the k-means method. The programming language for clustering can be, for example, Python 3.12.2, scikit-learn 1.4.2, or OpenCV 4.9.0. However, the clustering algorithm and programming language are not particularly limited and can be any well-known one. 【0074】The control circuit 190 clusters the infrared image 200 into groups where the reduction in peeling force is good and groups where the reduction in peeling force is poor. The number of groups is specified in advance for the clustering process. The number of groups is not particularly limited, but may be six, for example, as shown in Figure 12. A skilled worker judges the quality of the reduction in peeling force, the appropriateness of the irradiation intensity of the first laser beam L1, and the quality of the pitch of the irradiation points in each group. The skilled worker inputs the judgment results into an input device such as a keyboard. The control circuit 190 acquires the judgment results of the skilled worker via the input device. 【0075】 If the control circuit 190 determines in step S205 that the reduction in peeling force is satisfactory (step S205, YES), the control circuit 190 proceeds with the processing from step S206 onward. Specifically, the holding unit 100 releases the holding of the polymerized substrate W (step S206). Next, the first transport device 32 removes the polymerized substrate W from the laser processing device 34 (step S207). 【0076】 After step S207, the first transport device 32 transports the polymerized substrate W to the second laser processing device 35. If the laser processing device 34 irradiates the second peeling target surface F2 and the third peeling target surface F3 with the first laser beam L1, the first transport device 32 may transport the polymerized substrate W to the removal device 36. 【0077】 On the other hand, if the control circuit 190 determines in step S205 that the decrease in peeling force is undesirable (step S205, NO), the control circuit 190 performs the processing from step S208 onwards. The control circuit 190 performs control to form the irradiation point of the first laser beam L1 at a different position than the previous time without removing the polymerization substrate W from the holding part 100 (step S208). 【0078】 In Figure 11, the black circles indicate the position of the irradiation point in step S203, and the white circles indicate the position of the irradiation point in step S208. By shifting the position of the irradiation point, it is sometimes possible to eliminate the problem of reduced peeling force. As a result, the number of polymerized substrates W that need to be discarded can be reduced. After step S208, the control circuit 190 may repeat the processing from step S204 onwards. 【0079】The control circuit 190 only needs to perform step S208 n times. Here, n is an integer greater than or equal to 1 and is set in advance. After performing step S208 n times, the control circuit 190 proceeds with the processing from step S206 onward without performing step S208 again, regardless of the result of the determination in step S205. This prevents unnecessary laser irradiation of the same polymerization substrate W. 【0080】 The polymerized substrate W whose peeling force reduction defect has been resolved in step S208 is removed from the laser processing device 34 by the first transport device 32 and then transported to the second laser processing device 35 or the like. On the other hand, the polymerized substrate W whose peeling force reduction defect has not been resolved is removed from the laser processing device 34 by the first transport device 32 and then stored in cassette C3 without being transported to the second laser processing device 35 or the like. 【0081】 If the control circuit 190 determines in step S205 that the decrease in peeling force is undesirable (step S205, NO), the control circuit 190 may perform the processing from step S209 onwards, as shown in Figure 10. The control circuit 190 performs control to output an alarm (step S209). The alarm is output with, for example, at least one of an image and sound. The output of the alarm can attract the user's attention. As shown in Figures 6 and 7, the laser processing apparatus 34 is equipped with an alarm device 192 that outputs an alarm. If the control circuit 190 determines in step S205 that the decrease in peeling force is undesirable (step S205, NO), the control circuit 190 controls the alarm device 192 to output an alarm. 【0082】 Furthermore, as shown in Figure 10, if the control circuit 190 determines in step S205 that the decrease in peeling force is undesirable (step S205, NO), there is a possibility that an abnormality has occurred in the laser processing apparatus 34. In such a case, the control circuit 190 may perform control to prohibit the first transport device 32 from transporting a new polymerization substrate W into the laser processing apparatus 34 (step S210). This prevents the mass production of defective products. 【0083】However, an abnormality present in the polymerization substrate W before irradiation with the first laser beam L1 may also be a cause of the poor reduction in peeling force. Therefore, the control circuit 190 does not need to prohibit the loading of new polymerization substrates W. The control circuit 190 may only prohibit the loading of new polymerization substrates W if the poor reduction in peeling force occurs for a set number of consecutive sheets. 【0084】 Furthermore, if the substrate processing system 1 is equipped with multiple laser processing devices 34, and a decrease in peeling force occurs in only some of the laser processing devices 34, it is sufficient to prohibit the input of new polymerized substrates W to only those laser processing devices 34. The control circuit 190 may then control the input of new polymerized substrates W to the remaining laser processing devices 34. This allows the substrate processing system 1 to continue processing the polymerized substrates W. 【0085】 Step S210 may be performed after step S206. Step S210 may be performed before the next step S201. Also, the order of steps S209 and S210 may be reversed. Furthermore, the control circuit 190 may perform a combination of step S208 shown in Figure 9 and steps S209 and S210 shown in Figure 10. 【0086】 In this embodiment, the first peeling target surface F1 is set at the peripheral edge of the interface between the first substrate W1 and the second substrate W2, but it is sufficient to set it at least a part of the interface, or it may be set at the entire interface. Also, in this embodiment, the removal device 36 removes the peripheral edge W1a of the first substrate W1, but it is sufficient to remove at least a part of the first substrate W1, or it may remove the entire first substrate W1. The removal device 36 can remove at least a part of the first substrate W1 by applying an impact to the first peeling target surface F1 after it has been irradiated with the first laser beam L1 by the laser processing device 34. 【0087】 The embodiments of the laser processing apparatus, substrate processing system, and laser processing method described above have been explained, but the disclosure is not limited to the embodiments described above. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also naturally fall within the technical scope of the disclosure. 【0088】 This application claims priority based on Japanese Patent Application No. 2024-216455, filed with the Japan Patent Office on December 11, 2024, and the entire contents of Japanese Patent Application No. 2024-216455 are incorporated herein by reference. 【0089】 1 Substrate processing system 34 Laser processing apparatus F1 First peeling surface L1 First laser beam W Polymerized substrate W1 First substrate W1a Peripheral area W2 Second substrate

Claims

1. A laser processing apparatus that irradiates a first laser beam onto a first peeling surface set at the interface between a first substrate and a second substrate joined together, comprising: a holding unit for holding a polymer substrate composed of the first substrate and the second substrate; an irradiation unit for irradiating the first peeling surface of the polymer substrate held by the holding unit with the first laser beam; a moving unit for relatively moving the holding unit and the irradiation unit so that multiple irradiation points of the first laser beam are formed at intervals on the first peeling surface; an imaging unit for imaging the first peeling surface of the polymer substrate held by the holding unit with infrared light; and a control circuit, wherein the control circuit determines whether the reduction in peeling force on the first peeling surface is good or bad based on the infrared image captured by the imaging unit after irradiation with the first laser beam.

2. The laser processing apparatus according to claim 1, wherein, when the control circuit determines that the reduction in peeling force is not satisfactory, it controls the irradiation unit and the moving unit to form the irradiation point of the first laser beam at a different position than the previous time, without removing the polymer substrate from the holding unit.

3. The laser processing apparatus according to claim 1, further comprising an alarm device that outputs an alarm, wherein the control circuit controls the alarm device to output an alarm when it determines that the reduction in peeling force is not satisfactory.

4. The laser processing apparatus according to claim 1, wherein the control circuit determines that the reduction in peeling force is not satisfactory, and the first transport device prevents the new polymerization substrate from being transported to the laser processing apparatus.

5. The laser processing apparatus according to claim 1, wherein the control circuit outputs whether the reduction in peeling force is good or bad by inputting the infrared image into a machine learning model that uses training data linking (A) the infrared image and (B) the quality of the reduction in peeling force.

6. The laser processing apparatus according to claim 1, wherein the control circuit inputs the infrared image to a machine learning model that uses training data linking (A) the infrared image, (B) the quality of the reduction in peeling force, and (C) the suitability of the irradiation intensity of the first laser beam, and outputs the quality of the reduction in peeling force and the suitability of the irradiation intensity.

7. The laser processing apparatus according to claim 6, wherein the control circuit determines that the irradiation intensity is inappropriate and changes the setting of the irradiation intensity for subsequent uses.

8. The laser processing apparatus according to claim 6, wherein the control circuit determines that there is an abnormality in the irradiation unit when it determines that the irradiation intensity is inappropriate.

9. The laser processing apparatus according to claim 1, wherein the control circuit outputs the degree of the reduction in 10. The laser processing apparatus according to claim 9, wherein the control circuit determines that the pitch is not appropriate and changes the pitch setting for subsequent operations.

11. The laser processing apparatus according to claim 9, wherein the control circuit determines that there is an abnormality in the moving part when it determines that the pitch is not appropriate.

12. The laser processing apparatus according to claim 5, 6, or 9, wherein the model is machine-trained using data obtained by clustering the infrared images into groups where the reduction in peeling force is good and groups where the reduction in peeling force is poor, as training data.

13. A laser processing apparatus for irradiating a first laser beam onto a first peeling surface set at the interface between a first substrate and a second substrate joined together, comprising: a holding unit for holding a polymer substrate composed of the first substrate and the second substrate; an irradiation unit for irradiating the first peeling surface of the polymer substrate held by the holding unit with the first laser beam; a moving unit for relatively moving the holding unit and the irradiation unit so that multiple irradiation points of the first laser beam are formed at intervals on the first peeling surface; an imaging unit for imaging the first peeling surface of the polymer substrate held by the holding unit with infrared light; and a control circuit, wherein the control circuit clusters the infrared image captured by the imaging unit after irradiation with the first laser beam into groups where the reduction in peeling force on the first peeling surface is good and groups where the reduction in peeling force is poor.

14. A substrate processing system comprising: a laser processing apparatus according to any one of claims 1 to 11 and 13; a removal apparatus that applies an impact to the first surface to be peeled after the laser processing apparatus has irradiated it with the first laser beam, thereby removing at least a portion of the first substrate; and a first transport apparatus that transports the polymerized substrate to the laser processing apparatus and the removal apparatus.

15. A laser processing method comprising irradiating the first surface to be peeled with the first laser beam using a laser processing apparatus according to any one of claims 1 to 11 and 13.

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