Patterned resin layer manufacturing method, wiring layer manufacturing method, laminate manufacturing method, laminate, and electronic device

The method forms a resin layer on a substrate, coats a photosensitive siloxane layer, and uses it as a mask for dry etching to achieve high-resolution patterns, addressing the limitations of existing patterning methods by simplifying the process and reducing costs.

WO2026126819A1 Publication Date: 2026-06-18TORAY INDUSTRIES INC
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Patent Information

Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
TORAY INDUSTRIES INC
Filing Date
2025-11-28
Publication Date
2026-06-18

AI Technical Summary

⚠Technical Problem

Existing methods for patterning resin layers, such as laser drilling and wet etching, suffer from low resolution and require the use of hard masks, while dry etching lacks selectivity between resist materials and polyimide resins, leading to complex and costly processes.

⚗Method used

A method involving forming a resin layer on a substrate, coating a photosensitive siloxane layer, patterning it, and using it as a mask for dry etching in an oxygen-rich atmosphere to create high-resolution patterns without photosensitive properties, allowing for simple and cost-effective patterning.

🎯Benefits of technology

Enables high-resolution patterning of resin layers without the need for photosensitivity or hard masks, improving process simplicity and reducing costs.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention addresses the problem of providing a patterned resin layer manufacturing method through which a resin layer having no photosensitive function can be patterned on a substrate with high resolution and through which simple patterning can be performed without using a hard mask. A solution for said problem is a patterned resin layer manufacturing method which includes at least the following first to third steps in the stated order. 1) A first step for forming, on a substrate, a resin layer (A) containing one or more resins selected from the group consisting of polyimide resins, polybenzoxazole resins, polyamide resins (however, the polyamide resins contain no polyimide precursor or polybenzoxazole precursor), polyether resins, polyester resins, and copolymers thereof. 2) A second step for forming a siloxane layer (B) by applying and drying a photosensitive siloxane material on the resin layer (A), and further patterning the siloxane layer (B) through exposure and development. 3) A third step for etching the resin layer (A) by dry etching under an atmosphere containing at least 50 vol% of oxygen, by using the siloxane layer (B) as a mask.
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