Substrate support apparatus and substrate processing apparatus

Abstract

A substrate support apparatus according to the present invention comprises: a substrate support portion including a plurality of pocket grooves concavely formed on an upper surface thereof along a circumferential direction to receive a substrate, and a driving gas supply portion configured to supply a driving gas to an upper surface of the pocket grooves; and a satellite disposed in each of the pocket grooves and configured to float within the pocket groove by means of the driving gas, the satellite including a substrate seating portion on which the substrate is seated, wherein a gas discharge line connected from the upper surface of the satellite, through a discharge flow path formed inside the satellite, to an edge of a lower surface of the satellite may be formed such that, when a substrate is seated on the substrate seating portion, gas between the substrate and the upper surface of the satellite is discharged toward a lower portion of the satellite and discharged outward of the driving gas supply portion with respect to a center of the satellite.

Description

Substrate support device and substrate processing device

[0001] The present invention relates to a substrate support device and a substrate processing device, and more specifically, to a substrate support device and a substrate processing device for depositing a thin film on a substrate.

[0002] Generally, to manufacture semiconductor devices, display devices, or solar cells, various processes are performed in a substrate support device that includes a process chamber in a vacuum atmosphere. For example, a substrate may be loaded into the process chamber, and processes such as depositing a thin film or etching a thin film on the substrate may be carried out. At this time, the substrate is supported by a substrate support installed inside the process chamber, and process gas can be sprayed onto the substrate through a shower head installed on the upper part of the substrate support so as to face the substrate support.

[0003] At this time, for the growth of a uniform thin film on the substrate, it may be necessary to rotate not only the susceptor on which the substrate is placed, but also the substrate inside the pocket groove. In other words, by rotating the substrate while it is exposed to the reaction gas, the growth of the thin film can be induced to be substantially uniform.

[0004] For this purpose, a substrate support device has a satellite capable of supporting a substrate seated in a pocket groove on its upper surface, and the satellite supporting the substrate can be rotated through gas flow on its lower surface.

[0005] However, with such conventional substrate support devices, when the substrate is placed on the satellite, an air layer is formed between the substrate and the mounting surface of the satellite, causing the substrate to slide due to the air layer.

[0006] In addition, there was a problem where the overall process speed was slowed down because the substrate was placed on top of the satellite at a very slow speed to prevent an air layer from forming between the substrate and the mounting surface of the satellite.

[0007] The present invention aims to solve various problems, including those described above, by providing a substrate support device and a substrate processing device capable of preventing sliding of the substrate and increasing the process speed by eliminating the air layer formed between the substrate and the mounting surface of the satellite. However, these problems are exemplary and the scope of the present invention is not limited by them.

[0008] According to one embodiment of the present invention, a substrate support device is provided. The substrate support device comprises: a substrate support portion having a plurality of pocket grooves formed concavely on the upper surface so as to allow a substrate to be placed along the circumferential direction on the upper surface, and a driving gas supply portion formed to supply driving gas to the upper surface of the pocket grooves; and a substrate mounting portion formed on the upper surface for mounting the substrate, and a satellite disposed in each of the pocket grooves and floating within the pocket grooves by the driving gas. The satellite may have a gas discharge line formed on the upper surface of the satellite, passing through a discharge flow path formed inside the satellite, and connected to the edge of the lower surface of the satellite, such that when a substrate is mounted on the substrate mounting portion, the gas between the substrate and the upper surface of the satellite is exhausted to the lower surface of the satellite and is exhausted outward from the driving gas supply portion relative to the center of the satellite.

[0009] According to one embodiment of the present invention, the satellite may include: an inner region formed concavely so that the substrate is spaced a predetermined distance from the upper surface of the satellite, a stepped portion that surrounds the inner region and is formed higher than the inner region to separate the substrate; and a plurality of protrusions formed to protrude in the inner region to support the substrate.

[0010] According to one embodiment of the present invention, the satellite may include: a satellite body portion having a substrate mounting portion formed on an upper surface and an open discharge flow path portion formed on a lower surface, and a discharge hole portion penetrating from the substrate mounting portion to the discharge flow path portion; and a lower plate formed to be coupled to the lower part of the satellite body portion and to cover the discharge flow path portion.

[0011] According to one embodiment of the present invention, the satellite body portion may include: an assembly portion formed protrudingly to be coupled with the lower plate in the central region of the lower surface of the satellite body portion; and a fixing pin portion formed protrudingly to fix the position of the lower plate in the edge region of the lower surface.

[0012] According to one embodiment of the present invention, the lower plate may include: an assembly hole portion formed by penetrating so that the assembly portion can be inserted; and a fixing hole portion formed as a groove portion so that the fixing pin portion can be coupled.

[0013] According to one embodiment of the present invention, the discharge flow channel is formed by a plurality of grooves extending outward from the center direction of the satellite at the lower part of the satellite body, and each of the grooves extends from the discharge hole portion toward the outer wall portion formed at the lower edge of the satellite body portion to form a radial shape overall, and each of the grooves can be connected along the inner circumference of the outer wall portion.

[0014] According to one embodiment of the present invention, the outer wall portion is formed to extend downward along the perimeter of the satellite body portion, and the lower plate may be formed on the inner side of the outer wall portion so as to form a gap between the outer wall portion and the lower plate.

[0015] According to one embodiment of the present invention, the lower plate may be formed lower than the outer wall so that the driving gas supplied from the lower part of the lower plate does not collide with the outer wall.

[0016] According to one embodiment of the present invention, the pocket groove portion is formed with a rotating pattern portion through which the driving gas supplied from the driving gas supply portion flows, and the lower plate may be formed larger than the rotating pattern portion.

[0017] According to one embodiment of the present invention, the satellite may be formed as a single member such that the inner surface of the gas discharge line has a mutually continuous surface.

[0018] According to one embodiment of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus comprises: a process chamber having a processing space formed therein for processing a plurality of substrates; a substrate support member rotatably installed in the processing space, having a plurality of pocket grooves formed with a concave upper surface so that the plurality of substrates can be arranged in the upper circumferential direction, and having a driving gas supply member formed therein for supplying driving gas to the upper surface of the pocket grooves; a substrate mounting portion formed on the upper surface for mounting the substrate, and a satellite disposed in each of the pocket grooves and floating within the pocket grooves by the driving gas. and a gas injection unit provided at the upper part of the process chamber opposite to the substrate support unit and injecting processing gas toward the substrate support unit; wherein the satellite is configured such that when a substrate is placed on the substrate mounting unit, gas between the substrate and the upper surface of the satellite is exhausted to the lower part of the satellite, and a gas exhaust line may be formed connecting to the edge of the lower surface of the satellite through an exhaust flow path formed inside the satellite from the upper surface of the satellite to the edge of the lower surface of the satellite so as to exhaust outward from the center of the satellite relative to the driving gas supply unit.

[0019] According to a substrate processing apparatus of one embodiment of the present invention as described above, a substrate support device and a substrate processing apparatus can be implemented that prevent sliding of the substrate by exhausting gas between the substrate and the satellite during substrate loading, and reduce the overall process time by shortening the substrate loading time. Of course, the scope of the present invention is not limited by these effects.

[0020] FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to one embodiment of the present invention.

[0021] FIG. 2 is a cross-sectional view schematically showing a substrate support device according to one embodiment of the present invention.

[0022] FIGS. 3 and FIGS. 4 are exploded perspective views showing a satellite according to one embodiment of the present invention.

[0023] FIG. 5 is a cross-sectional perspective view showing a satellite according to one embodiment of the present invention.

[0024] Figure 6 is a cross-sectional view showing region B of Figure 5.

[0025] FIG. 7 is a cross-sectional view showing a satellite according to another embodiment of the present invention.

[0026] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0027] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation.

[0028] Hereinafter, embodiments of the present invention are described with reference to drawings that schematically illustrate ideal embodiments of the present invention. In the drawings, variations of the illustrated shapes may be expected, for example, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the inventive concept should not be interpreted as being limited to specific shapes of the areas illustrated herein, but should include, for example, variations in shape resulting from manufacturing.

[0029] FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to one embodiment of the present invention, FIG. 2 is a cross-sectional view schematically showing a substrate support apparatus according to one embodiment of the present invention, FIG. 3 and FIG. 4 are exploded perspective views showing a satellite according to one embodiment of the present invention, FIG. 5 is a cross-sectional perspective view showing a satellite according to one embodiment of the present invention, and FIG. 6 is a cross-sectional view showing region B of FIG. 5.

[0030] First, a substrate processing device according to one embodiment of the present invention may largely include a process chamber (100), a substrate support device, and a gas injection unit (400).

[0031] As illustrated in FIG. 1, the process chamber (100) may include a chamber body (120) in which a processing space (A) for processing a plurality of substrates is formed inside. The chamber body (120) may have a processing space (A) formed in a circular or square shape inside.

[0032] In the processing space (A), processes such as depositing a thin film or etching a thin film can be performed on a substrate (S) supported by a substrate support (200) installed in the processing space (A).

[0033] A plurality of exhaust ports (not shown) may be installed on the lower side of the chamber body (120) in a shape that surrounds the substrate support (200). The exhaust ports may be connected to a main vacuum pump installed outside the process chamber (100) through an exhaust pipe.

[0034] The above exhaust port can exhaust various processing gases inside the processing space (A) or form a vacuum atmosphere inside the processing space by sucking in air inside the processing space (A) of the process chamber (100).

[0035] Although not shown, a gate (not shown) may be formed on the side of the chamber body (120) as a passage for loading or unloading a substrate (S) into or from the processing space (A). Additionally, the processing space (A) of the chamber body (120), which is open at the top, may be closed by the chamber lid (110).

[0036] As shown in FIG. 1, the gas injection unit (400) is provided at the top of the process chamber (100) so as to face the substrate support (200), and can inject a processing gas toward the substrate support (200).

[0037] A gas injection unit (400) is formed at the upper center of the process chamber (100) so as to face the substrate support (200) and can inject the process gas toward the substrates below, and can also be formed at the upper part of the process chamber (100) so as to face the substrate support (200) and can inject the process gas so as to fall toward a plurality of substrates below.

[0038] A substrate support device according to one embodiment of the present invention may include a substrate support member (200) and a satellite (300).

[0039] As illustrated in FIGS. 1 and 2, the substrate support member (200) is provided in the processing space (A) of the process chamber (100) to support the substrate (S) and can be installed so as to be rotatable with respect to the central axis of the process chamber (100). For example, the substrate support member (200) may be a substrate support structure including a susceptor or a table capable of supporting the substrate (S).

[0040] The substrate support (200) may have a plurality of pocket grooves (210) formed with a concave upper surface so that a plurality of substrates can be seated along the upper circumferential direction.

[0041] For example, as shown in FIG. 2, a plurality of pocket grooves (210) may be formed at equal distances from the rotation axis on the upper part of the substrate support (200). At this time, a rotation pattern portion (220) may be formed on the bottom surface of each pocket groove portion (210), and a driving gas passage connected to a part of the rotation pattern portion (220) may be formed inside the substrate support (200).

[0042] Driving gas may be supplied from the center of the pocket groove (210), and, for example, a driving gas supply section (221) may be formed to supply driving gas to the upper surface of the pocket groove (210). More specifically, the pocket groove (210) may have a rotating pattern section (220) formed therein through which the driving gas supplied from the driving gas supply section (221) flows.

[0043] Specifically, the driving gas is injected into at least a portion of the rotation pattern section (220) and flows along the rotation pattern section (220), thereby allowing the satellite (300) to float or rotate.

[0044] For example, the rotation pattern portion (220) may be formed to be inclined upward along the flow direction of the driving gas. Accordingly, the cross-sectional area narrows as it moves toward the flow direction of the driving gas, thereby inducing the flow of the driving gas to accelerate and increasing the rotational force transmitted to the satellite (300).

[0045] Accordingly, the driving gas introduced into the driving gas channel formed inside the substrate support (200) is injected into the lower part of the satellite (300) through the rotation pattern part (220), thereby generating upward pressure from the lower part and causing the satellite (300) to float.

[0046] The driving gas is supplied from a driving gas supply device formed outside the process chamber (100), flows through channels formed inside the substrate support (200), and can be supplied to a plurality of pocket grooves (210) formed on the upper part of the substrate support (200). At this time, the driving gas supply device can control the flow rate of the driving gas supplied to the substrate support (200).

[0047] The substrate support (200) may include a shaft (230).

[0048] The shaft (230) is formed to have a central axis that coincides with the rotation axis at the lower part of the substrate support (200) to support the substrate support (200), and can rotate together with the substrate support (200) by transmitting power from the driving unit to rotate the substrate support (200).

[0049] The shaft (230) may have a gas passage formed through it from the top to the bottom so as to supply driving gas to the rotation pattern part (220).

[0050] The substrate support (200) can be formed such that a cylindrical rotating projection protrudes from the central axis of the bottom surface of the pocket groove (210), and accordingly, the satellite (300) can rotate around the rotating projection, thereby guiding the rotational movement of the satellite (300) to be performed stably.

[0051] Accordingly, a rotational projection groove may be formed on the lower central axis of the satellite (300) to accommodate at least a portion of the protruding rotational projection.

[0052] As shown in FIGS. 1 and 2, the satellite (300) can be rotated by being positioned along the circumferential direction on the upper part of the substrate support (200) rotating within the process chamber (100).

[0053] The satellite (300) is placed in each pocket groove (210) and can float within the pocket groove (210) by means of a driving gas supplied through the substrate support (200).

[0054] When a substrate (S) is placed on the substrate mounting portion (311) of the satellite (300), the gas between the substrate (S) and the upper surface of the satellite (300) is exhausted to the lower part of the satellite (300), and a gas exhaust line (L) can be formed that passes through the exhaust flow path portion (316) formed inside the satellite (300) from the upper surface of the satellite (300) and connects to the edge of the lower surface of the satellite (300), so that the gas is exhausted to the outside of the driving gas supply portion (221) relative to the center of the satellite (300).

[0055] As the gas between the substrate (S) and the upper surface of the satellite (300) is formed to be exhausted outward from the lower part of the satellite (300) than the driving gas supply unit (221), the driving gas supplied from the driving gas supply unit (221) is prevented from flowing into the exhaust area of ​​the satellite (300), and also, the driving gas is prevented from interfering with rotational driving due to the exhaust area of ​​the satellite (300).

[0056] Specifically, as illustrated in FIGS. 3 and 4, the satellite (300) may be formed with a satellite body (310) having a substrate mounting portion (311) formed on its upper surface for mounting a substrate (S), and a lower plate (320) at the bottom of the satellite body (310). At this time, FIG. 3 shows the upper part of the satellite body (310) and the upper part of the lower plate (320), and FIG. 4 shows the lower part of the satellite body (310) and the upper part of the lower plate (320).

[0057] According to some embodiments of the present invention, the satellite (300) may include a stepped portion (315) and a protrusion (312).

[0058] As shown in FIG. 3, a substrate mounting portion (311) is formed on the upper surface (310a) of the satellite (300), and the substrate mounting portion (311) can be divided into an inner region (C1) and an outer region (C2) based on the step portion (315).

[0059] Specifically, the step portion (315) can distinguish an inner region (C1) formed concavely so that the substrate (S) is spaced a predetermined distance from the upper surface (310a) of the satellite body portion (310), and an outer region (C2) that surrounds the inner region (C1) and is formed higher than the inner region (C1) so that the substrate is seated thereon.

[0060] A flat surface may be formed in the outer region (C2) so that the substrate (S) can be seated, and a plurality of protruding protrusions (312) may be formed in the inner region (C1) to support the substrate (S).

[0061] Specifically, when a substrate (S) is placed on the substrate mounting portion (311), the edge portion of the substrate (S) is placed on the outer region (C2) of the satellite body portion (310), and the center portion of the substrate (S) can be placed on the inner region (C1) of the satellite body portion (310) at a predetermined distance apart.

[0062] Alternatively, in addition to the protrusion (312), a stepped portion for gas collection or a groove-shaped groove may be formed in the inner region (C1).

[0063] According to some embodiments of the present invention, the satellite body portion (310) may include a pinhole portion (314).

[0064] As shown in FIGS. 3 and 4, the pinhole portion (314) can be formed by penetrating the central region of the satellite body portion (310) so that a lift pin for raising and lowering the substrate (S) when the substrate (S) moves is inserted.

[0065] Specifically, a plurality of pinhole portions (314) are formed vertically through the satellite body portion (310), and the lift pin is inserted into each of the plurality of pinhole portions (314), and at least a portion of it can be inserted into the lift ring insertion groove formed in the pocket groove portion (210). Thus, the lift pin inserted into the pinhole portion (314) can be raised and lowered by the lifting pin and the lift ring inserted into the lift ring insertion groove.

[0066] According to some embodiments of the present invention, the satellite body portion (310) may include a discharge hole portion (313), a discharge flow path portion (316), and an outer wall portion (317).

[0067] As shown in FIGS. 3 and 4, the exhaust hole (313) can be formed through the satellite body (310) so that when a substrate is placed on the substrate mounting portion (311), the gas between the substrate (S) and the upper surface (310a) of the satellite body (310) is exhausted to the lower part of the satellite body (310).

[0068] Specifically, when a substrate (S) is placed on the substrate mounting portion (311) of the upper surface (310a) of the satellite body portion (310), an air layer may be formed between the substrate (S) and the upper surface of the satellite body portion (310). At this time, gas present in the air layer can be exhausted from the substrate mounting portion (311) through the exhaust hole portion (313).

[0069] For example, when the substrate (S) is placed on the substrate mounting portion (311), the gas formed below the substrate (S) and trapped in the substrate mounting portion (311) can be exhausted to the lower part of the satellite body portion (310) through the exhaust hole portion (313) formed on the upper surface (310a) of the satellite body portion (310).

[0070] The exhaust hole portion (313) is formed in the inner region (C1) of the satellite body portion (310) and can exhaust gas present in the inner region (C1) formed in a relatively groove shape. That is, the gas layer formed between the substrate (S) and the upper surface of the satellite body portion (310) can be removed through the exhaust hole portion (313).

[0071] As shown in FIG. 4, the discharge channel (316) may be formed at the lower part of the satellite body (310) and extend outward from the center of the satellite (300).

[0072] Specifically, the discharge channel (316) is formed with a plurality of grooves in the lower part of the satellite body (310), and each groove may be formed radially by extending from the discharge hole (313) toward the outer wall (317) formed at the lower edge of the satellite body (310).

[0073] A discharge hole (313) may be formed on one side of the discharge flow path (316), and the other side of the discharge flow path (316) may be connected to an outer wall (317). That is, the discharge flow path (316) may connect the discharge hole (313) and the outer wall (317) formed on the lower outer side of the satellite body (310), and accordingly, gas discharged from the discharge hole (313) may flow along the discharge flow path (316) to the outer wall (317).

[0074] The discharge channel (316) can be connected along the inner circumference of each groove of the outer wall (317).

[0075] For example, the gas discharged from each discharge hole (313) flows along the discharge flow path (316) to the outer wall (317) and is exhausted along the outer wall (317), and the other side of the discharge flow path (316) can be connected to the inside of the outer wall (317) so as to prevent the exhaust gas from concentrating in one direction.

[0076] The outer wall portion (317) can be formed by extending downward along the perimeter of the satellite body portion (310).

[0077] As shown in FIGS. 4 to 6, the outer wall portion (317) is a wall that extends downward along the outer perimeter of the satellite body portion (310).

[0078] The outer wall portion (317) may be formed to be spaced apart by a predetermined gap (g) from the perimeter of the lower plate (320). Specifically, the lower plate (320) may be formed on the inner side of the outer wall portion (317) so that a gap (g) is formed between the outer wall portion (317) and the lower plate (320).

[0079] Gas flowing in the discharge flow path (316) can be exhausted through a gap (g) between the side of the lower plate (320) and the outer wall (317). At this time, the gap (g) between the lower plate (320) and the outer wall (317) is opened downward so that gas flowing along the discharge flow path (316) can be exhausted downward.

[0080] Thus, the effect of process gas being injected from the gas injection part (400) above the satellite (300) can be minimized.

[0081] The lower plate (320) can be formed lower than the outer wall (317) so that the driving gas supplied from the lower part of the lower plate (320) does not collide with the outer wall (317).

[0082] Specifically, the lower surface of the lower plate (320) is formed lower than the lower surface of the outer wall (317) to minimize the effect of fluid gas being injected from the pocket groove (210) below the satellite (300) and furthermore, the flow of exhaust gas can be induced along the fluid gas flowing laterally from the lower surface of the satellite (300).

[0083] The lower plate (320) can be formed larger than the rotation pattern portion (220).

[0084] Specifically, the radius of the lower plate (320) can be formed to be larger than the distance from the center of the pocket groove (210) to the outermost side where the rotation pattern (220) is formed.

[0085] For example, the rotational pattern portion (220) formed in the pocket groove portion (210) can be entirely covered by the lower plate (320). Accordingly, the rotational pattern portion (220) formed in the pocket groove portion (210) is not directly connected to the gap (g) formed between the side of the lower plate (320) and the outer wall portion (317), and the gap (g) is formed outward from the rotational pattern portion (220), thereby preventing the driving gas injected from the rotational pattern portion (220) from flowing into the gap (g).

[0086] The lower surface of the lower plate (320) can be formed flat so that no unevenness is formed.

[0087] Thus, all of the driving gas injected from the rotation pattern section (220) collides with the lower surface of the lower plate (320), allowing the satellite (300) to float and rotate.

[0088] According to some embodiments of the present invention, the satellite body (310) and the lower plate (320) can each be processed and formed into an assembled type.

[0089] For example, the satellite body part (310) may include an assembly part (318) and a fixing pin part (319).

[0090] The assembly part (318) can be formed protruding from the lower surface (310b) so as to be combined with the lower plate (320) in the central area of ​​the lower surface (310b) of the satellite body part (310).

[0091] In order to avoid being affected by the driving gas injected from the rotational pattern portion (220) at the boundary line where the satellite body portion (310) and the lower plate (320) are assembled, the assembly portion (318) may be formed further inward than the rotational pattern portion (220) of the pocket groove portion (210).

[0092] Additionally, the assembly portion (318) may be formed larger than the lift ring insertion groove formed in the pocket groove portion (210).

[0093] At this time, the lower plate (320) may have an assembly hole (321) formed through it so that the assembly part (318) can be inserted.

[0094] The fixing pin portion (319) may be formed to protrude in the edge area of ​​the lower surface (310b) to fix the position of the lower plate (320), and the lower plate (320) may include a fixing hole portion (322) formed as a groove portion so that the fixing pin portion (319) can be coupled.

[0095] Thus, the lower plate can be rotated by the driving gas supplied from the rotation pattern portion (220) of the pocket groove portion (210), and the satellite body portion (310) can be rotated in synchronization by the fixing hole portion (322) formed in the lower plate (320) and the fixing pin portion (319) inserted into the fixing hole portion (322).

[0096] FIG. 7 is a cross-sectional view showing a satellite according to another embodiment of the present invention.

[0097] A satellite (300) according to another embodiment of the present invention is formed as a single member such that the inner surface of the gas discharge line (L) has a mutually continuous surface, so that there is no boundary surface in the gas discharge line (L), facilitating the flow of gas and allowing for efficient exhaust.

[0098] Specifically, the satellite (300) has a substrate mounting portion (311) formed on the upper side where a substrate is mounted, an outer wall portion (317) formed along the edge on the lower side, and a ring-shaped gap (g) may be formed inside the outer wall portion (317).

[0099] For example, as shown in FIG. 7, when looking at the cross-section of the satellite (300), it can be divided into a satellite body (310) and a lower plate (320) based on the discharge flow path (316). At this time, the satellite body (310) and the lower plate (320) can be structurally separated, and their cross-sections can be formed as a single unit without a boundary surface.

[0100] For example, the satellite (300) can penetrate in the vertical and horizontal directions at a predetermined location and then fill a portion of the penetration hole to form a discharge hole portion (313) and a discharge flow path portion (316), respectively.

[0101] Additionally, the satellite body (310) and the lower plate (320) can be formed as a single unit by 3D printing, and accordingly, the satellite (300) can be freely manufactured in a shape that facilitates gas exhaust downward. Since there is no fastening surface for assembly, leakage at the interface caused by fastening and unintended gas flow can be prevented.

[0102] The substrate support device and substrate processing device according to the present invention can prevent sliding of the substrate (S) by discharging gas between the substrate (S) and the satellite (300) when loading the substrate, and can reduce the loading time of the substrate (S) to shorten the overall process time, and can prevent contamination of the lower part of the substrate (S) by ensuring that the edge area of ​​the lower part of the substrate (S) is in close contact with the substrate (S).

[0103] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A substrate support member having a plurality of pocket grooves formed concavely on the upper surface so that a substrate can be arranged along the circumferential direction on the upper surface, and a driving gas supply member formed to supply driving gas to the upper surface of the pocket grooves; and A substrate mounting portion is formed on the upper surface for mounting the substrate, and a satellite is disposed in each of the pocket grooves and floats within the pocket grooves by means of the driving gas; Includes, The above satellite is, A substrate support device having a gas discharge line formed from the upper surface of the satellite to the edge of the lower surface of the satellite, passing through a discharge flow path formed inside the satellite, so that when a substrate is placed on the substrate mounting portion, gas between the substrate and the upper surface of the satellite is exhausted to the lower surface of the satellite and exhausted outwardly from the driving gas supply portion relative to the center of the satellite.

2. In Paragraph 1, The above satellite is, A stepped portion separating an inner region formed concavely so that the substrate is spaced a predetermined distance from the upper surface of the satellite, and an outer region formed higher than the inner region and surrounding the inner region to accommodate the substrate; and A plurality of protrusions formed to protrude in the inner region to support the substrate; A substrate support device including 3. In Paragraph 1, The above satellite is, A satellite body portion having a substrate mounting portion formed on an upper surface, an open discharge flow path portion formed on a lower surface, and a discharge hole portion formed penetrating from the substrate mounting portion to the discharge flow path portion; and A lower plate formed to be coupled to the lower part of the satellite body and to cover the discharge flow path; A substrate support device including 4. In Paragraph 3, The above satellite body part is, An assembly portion formed by protruding from the central region of the lower surface of the satellite body portion to be coupled with the lower plate; and A fixing pin portion formed protrudingly to fix the position of the lower plate in the edge area of ​​the lower surface; A substrate support device including 5. In Paragraph 4, The lower plate above is, An assembly hole formed through so that the above assembly part can be inserted; and A fixing hole portion formed as a groove portion so that the above-mentioned fixing pin portion can be coupled; A substrate support device including 6. In Paragraph 3, The above discharge flow path is, A substrate support device having a plurality of grooves formed in the lower part of the satellite body portion, extending outwardly from the center direction of the satellite, each groove portion extending from the discharge hole portion toward the outer wall portion formed at the lower edge of the satellite body portion to form a radial shape overall, and each groove portion connected along the inner circumference of the outer wall portion.

7. In Paragraph 6, The above outer wall section is, A substrate support device formed by extending downward along the perimeter of the satellite body portion, wherein the lower plate is formed on the inner side of the outer wall portion so as to form a gap between the outer wall portion and the lower plate.

8. In Paragraph 6, The lower plate above is, A substrate support device formed lower than the outer wall so that the driving gas supplied from the lower part of the lower plate does not collide with the outer wall.

9. In Paragraph 3, The above pocket groove portion is, A rotating pattern section is formed in which the driving gas supplied from the driving gas supply section flows, and The lower plate above is, A substrate support device formed larger than the above-mentioned rotational pattern portion.

10. In Paragraph 1, The above satellite is, A substrate support device formed as a single member such that the inner surface of the above gas discharge line has a mutually continuous surface.

11. A process chamber having a processing space formed therein for processing a plurality of substrates; A substrate support member rotatably installed in the above processing space, having a plurality of pocket grooves formed with a concave upper surface so that the plurality of substrates can be arranged in the upper circumferential direction, and a driving gas supply member formed to supply driving gas to the upper surface of the pocket grooves; A substrate mounting portion is formed on the upper surface for mounting the substrate, and a satellite is disposed in each of the pocket grooves and floats within the pocket grooves by means of the driving gas; and A gas injection unit provided at the upper part of the process chamber so as to face the substrate support, and spraying a processing gas toward the substrate support; Includes, The above satellite is, A substrate processing device in which, when a substrate is placed on the substrate mounting portion, gas between the substrate and the upper surface of the satellite is exhausted to the lower surface of the satellite, and a gas exhaust line is formed connecting the upper surface of the satellite to the edge of the lower surface of the satellite, passing through an exhaust flow path formed inside the satellite, so as to exhaust outward from the center of the satellite relative to the driving gas supply portion.

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