Laminated insulator, forming method therefor, and semiconductor device comprising same

Abstract

A forming method for a laminated insulator according to an aspect of the present invention comprises the steps of: forming a first high-k dielectric layer containing a first metal oxide on a substrate; forming a first interface layer on the first high-k dielectric layer; and forming a second high-k dielectric layer containing a second metal oxide on the first interface layer, wherein the first interface layer comprises a composite oxide of the first metal oxide and the second metal oxide to reduce the lattice mismatch between the first high-k dielectric layer and the second high-k dielectric layer.

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