Protective liner member for dry etching device, and dry etching device including same

Abstract

Disclosed are a protective liner member for a dry etching device and a dry etching device including same. The disclosed protective liner member for a dry etching device may be disposed in a process chamber of the dry etching device so as to protect at least an inner surface of the process chamber from an etching process environment. The protective liner member may include at least one of titanium and titanium hydride, and the at least one of titanium and titanium hydride may be disposed to be exposed to or to be adjacent to the etching process environment. The titanium hydride may include TiH2.

Description

Protective liner member for a dry etching device and a dry etching device including the same

[0001] The present invention relates to semiconductor process equipment, its components, and related methods, and more specifically, to a dry etching apparatus, its components, and related methods.

[0002] Generally, in the manufacture of semiconductor devices, after forming a workpiece on a substrate, an etching process is performed to pattern (etch) the workpiece into a predetermined pattern, and the workpiece formation and the etching process can be performed multiple times to form various pattern portions of the semiconductor device. The etching process can be performed using wet etching or dry etching methods, and as the design rule of the semiconductor device decreases, the importance of dry etching for forming fine and precise patterns is increasing.

[0003] Dry etching can be performed, for example, by applying RF (radio frequency) power into a chamber and controlling the etching gas and pressure. The etching gas can become a plasma state due to the RF power, and the etching gas in the plasma state can act physically or physicochemically on the film to be worked on to etch a specific region of the film to be worked on.

[0004] During the dry etching process, reaction byproducts may be generated due to the reaction between the workpiece and the plasma, and the inner wall of the chamber may be corroded, damaged, or contaminated by the etching environment containing the plasma. Therefore, a protective material is required to protect the inner wall of the chamber, and in this regard, protective materials coated with materials such as Al2O3, Y2O3, and YAG (yttrium aluminum garnet) on an Al-based substrate are mainly used. However, in the case of existing protective materials, there is a problem of corrosion / etching by chlorine-based etching gas, and there is a problem of the coating layer peeling off or being damaged due to the different coefficients of thermal expansion (CTE) between the Al-based substrate and the coating layer during the thermal expansion of the protective material.

[0005] Recently, low-temperature dry etching methods have been attracting attention for various reasons, including the reduction of problems caused by reaction byproducts, improved etching performance, and enhanced selectivity, and there is a demand for the development of equipment and materials suitable for low-temperature etching. In the case of conventional protective materials, during the low-temperature dry etching process where the substrate temperature is maintained at a low level, the Al in the protective material can react with the Cl in the chlorine-based etching gas to generate reactants such as AlCl3. Since AlCl3 and similar substances have low vapor pressure at low temperatures, they do not volatilize and cause the problem of contaminating the substrate to be etched.

[0006] Therefore, in dry etching, there is a need to develop corrosion-resistant materials capable of effectively protecting the inner walls of the chamber from the etching environment and overcoming the problems and limitations of existing materials. In particular, for low-temperature dry etching methods, there is a need to develop devices and related technologies capable of preventing or suppressing substrate contamination caused by the low vapor pressure of reaction products.

[0007] The technical problem that the present invention aims to solve is to provide a protective liner member having excellent physical properties that can effectively protect the inner wall of a chamber, etc., from a dry etching process environment.

[0008] In addition, the technical problem that the present invention aims to solve is to provide a protective liner member capable of preventing / suppressing substrate contamination problems caused by reaction products having low vapor pressure in low-temperature dry etching.

[0009] In addition, the technical problem that the present invention aims to solve is to provide a dry etching apparatus including the protective liner member described above.

[0010] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be understood by those skilled in the art from the description below.

[0011] According to one embodiment of the present invention, a protective liner member for a dry etching apparatus is provided, wherein the protective liner member is disposed within a process chamber of the dry etching apparatus to protect at least an inner surface of the process chamber from an etching process environment, and the protective liner member comprises at least one of titanium and titanium hydride, and wherein at least one of the titanium and titanium hydride is disposed to be exposed to or adjacent to the etching process environment.

[0012] The above titanium hydride may contain TiH2.

[0013] About 90% or more or the entirety of the above protective liner member may be composed of the titanium.

[0014] About 90% or more or the whole of the above protective liner member may be composed of the titanium hydride.

[0015] The above protective liner member may include a first layer and a second layer in contact with the first layer, and the second layer may be positioned to be exposed to or adjacent to the etching process environment than the first layer, the first layer may include titanium, and the second layer may include titanium hydride.

[0016] The above protective liner member may include a liner substrate layer and a coating layer in contact with the liner substrate layer, and the coating layer may be disposed to be exposed to or adjacent to the etching process environment than the liner substrate layer, the liner substrate layer may include a metallic material, and the coating layer may include at least one of titanium and titanium hydride.

[0017] The above protective liner member may include a liner substrate layer, a first coating layer portion in contact with the liner substrate layer, and a second coating layer portion in contact with the first coating layer portion, and the second coating layer portion may be disposed to be exposed to or adjacent to the etching process environment than the first coating layer portion, and the liner substrate layer may include a metallic material, the first coating layer portion may include titanium, and the second coating layer portion may include titanium hydride.

[0018] The above protective liner member may be positioned to cover at least about 80% of the inner surface of the process chamber.

[0019] The above protective liner member can be configured to be replaceable in the process chamber.

[0020] The above dry etching device may include a substrate holder on which a substrate structure to be etched is loaded and a temperature control unit for controlling the temperature of the substrate holder, and the temperature control unit may be configured to control the temperature of the substrate holder to about 50°C or lower, and the dry etching device may be a low-temperature dry etching device.

[0021] According to another embodiment of the present invention, a dry etching apparatus is provided, comprising: a process chamber; a process gas supply unit for supplying a process gas to the process chamber; a substrate holder disposed within the process chamber on which a substrate structure to be etched is loaded; a temperature control unit for controlling the temperature of the substrate holder; and a protective liner member disposed within the process chamber to protect at least one inner surface of the process chamber from an etching process environment, comprising at least one of titanium and titanium hydride, wherein at least one of the titanium and titanium hydride is disposed to be exposed to or adjacent to the etching process environment.

[0022] About 90% or more or the entirety of the above protective liner member may be composed of the titanium.

[0023] About 90% or more or the whole of the above protective liner member may be composed of the titanium hydride.

[0024] The above protective liner member may include a first layer and a second layer in contact with the first layer, and the second layer may be positioned to be exposed to or adjacent to the etching process environment than the first layer, the first layer may include titanium, and the second layer may include titanium hydride.

[0025] The above protective liner member may include a liner substrate layer and a coating layer in contact with the liner substrate layer, and the coating layer may be disposed to be exposed to or adjacent to the etching process environment than the liner substrate layer, the liner substrate layer may include a metallic material, and the coating layer may include at least one of titanium and titanium hydride.

[0026] The above protective liner member may include a liner substrate layer, a first coating layer portion in contact with the liner substrate layer, and a second coating layer portion in contact with the first coating layer portion, and the second coating layer portion may be disposed to be exposed to or adjacent to the etching process environment than the first coating layer portion, and the liner substrate layer may include a metallic material, the first coating layer portion may include titanium, and the second coating layer portion may include titanium hydride.

[0027] The above protective liner member can be configured to be replaceable in the process chamber.

[0028] The above temperature control unit may be configured to control the temperature of the substrate holder to about 50°C or lower, and the above dry etching device may be a low-temperature dry etching device.

[0029] The above process gas may include at least one of a hydrogen-based gas and a chlorine-based gas.

[0030] The above dry etching device may be a plasma etching device that uses plasma for etching.

[0031] According to another embodiment of the present invention, a protective liner member for a dry etching apparatus is provided, wherein the protective liner member is disposed within a process chamber of the dry etching apparatus to protect at least an inner surface of the process chamber from an etching process environment, and the protective liner member comprises at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W, and wherein at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W is disposed to be exposed to or adjacent to the etching process environment.

[0032] According to another embodiment of the present invention, a dry etching apparatus is provided, comprising: a process chamber as a dry etching apparatus; a process gas supply unit for supplying a process gas to the process chamber; a substrate holder disposed within the process chamber, on which a substrate structure to be etched is loaded; a temperature control unit for controlling the temperature of the substrate holder; and a protective liner member disposed within the process chamber to protect at least one inner surface of the process chamber from an etching process environment, comprising at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W, wherein at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W is disposed to be exposed to or adjacent to the etching process environment.

[0033] The above temperature control unit may be configured to control the temperature of the substrate holder to about 50°C or lower, and the above dry etching device may be a low-temperature dry etching device.

[0034] The above process gas may include chlorine-based gas.

[0035] According to embodiments of the present invention, a protective liner member having excellent physical properties capable of effectively protecting the inner wall of a chamber, etc., from a dry etching process environment can be realized. Furthermore, according to embodiments of the present invention, a protective liner member capable of preventing / suppressing substrate contamination problems caused by reaction products having low vapor pressure in low-temperature dry etching can be realized. Additionally, according to embodiments of the present invention, a dry etching apparatus applying the above-mentioned protective liner member can be provided.

[0036] According to one embodiment, at least one material among titanium and titanium hydride is applied to a protective liner member, and if necessary, titanium hydride (e.g., TiH2) is formed on the surface of the protective liner member using a hydrogen-based gas, thereby securing excellent corrosion resistance, etch resistance, and other physical properties.

[0037] According to one embodiment, at least one material among titanium and titanium hydride is applied to a protective liner member and a reaction product with a high vapor pressure, such as TiCl4, is formed using a chlorine-based gas, thereby preventing or suppressing the problem of substrate contamination caused by a reaction product with a low vapor pressure during low-temperature dry etching.

[0038] According to one embodiment, the protective liner member is configured to form a reaction product with a high vapor pressure, such as at least one of AsCl3, BCl3, CrO2Cl2, GaCl3, GeCl4, GeHCl3, NbCl5, SbCl3, SbCl5, SeOCl2, SiCl4, SnCl4, TiCl4, VCl4, VOCl3, and WCl5, thereby preventing or suppressing substrate contamination problems caused by reaction products with a low vapor pressure during dry etching (low-temperature dry etching).

[0039] By applying the protective liner member according to the embodiments, not only can excellent dry etching (e.g., low-temperature dry etching) characteristics be secured, but the PM (preventive maintenance) cycle of the etching device can also be increased, thereby reducing the burden of maintenance / management and achieving cost reduction effects.

[0040] However, the effects of the present invention are not limited to the above effects and can be extended in various ways without departing from the technical concept and scope of the present invention.

[0041] FIG. 1 is a drawing exemplarily showing a protective liner member for a dry etching apparatus according to one embodiment of the present invention and a dry etching apparatus to which the same is applied.

[0042] FIG. 2 is a cross-sectional view showing a part of a protective liner member for a dry etching apparatus according to one embodiment of the present invention.

[0043] FIG. 3 is a cross-sectional view showing a portion of a protective liner member for a dry etching apparatus according to another embodiment of the present invention.

[0044] FIG. 4 is a cross-sectional view showing a part of a protective liner member for a dry etching apparatus according to another embodiment of the present invention.

[0045] FIG. 5 is a cross-sectional view showing a portion of a protective liner member for a dry etching apparatus according to another embodiment of the present invention.

[0046] FIG. 6 is a cross-sectional view showing a portion of a protective liner member for a dry etching apparatus according to another embodiment of the present invention.

[0047] Figure 7 is a graph showing the change in vapor pressure of TiCl4 and AlCl3 with temperature.

[0048] FIG. 8 is a graph showing the vapor temperature characteristics of a reaction product (by-product) that can be formed by the reaction between the material of a protective liner member according to an embodiment of the present invention and a chlorine-based gas.

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

[0050] FIG. 1 is a drawing that exemplarily shows a protective liner member (500) for a dry etching apparatus according to one embodiment of the present invention and a dry etching apparatus to which the same is applied.

[0051] Referring to FIG. 1, a protective liner member (500) according to an embodiment of the present invention may be disposed within a process chamber (100) of a dry etching apparatus to protect at least the inner surface of the process chamber (100) from an etching process environment (etching environment). The protective liner member (500) may be disposed to cover the inner surface (exposed inner surface) of the process chamber (100), and may be disposed in contact with or adjacent to the inner surface. Thus, the inner surface of the process chamber (100) may not be exposed to the etching process environment by the protective liner member (500). The protective liner member (500) may be a protective cover having a relatively thin thickness. In this respect, the protective liner member (500) may be referred to as an 'inner protective cover member' or an 'inner wall protective cover member'. The thickness of the protective liner member (500) may be, for example, about 1 to 20 mm. The protective liner member (500) can be exposed to the etching process environment within the process chamber (100).

[0052] The protective liner member (500) may be composed of at least one of titanium and titanium hydride. Here, at least one of the titanium and titanium hydride may be positioned to be exposed to or adjacent to the etching process environment. The titanium hydride may be TiH2 or may include it. The protective liner member (500) may have excellent corrosion resistance and etch resistance in the etching process environment inside the process chamber (100).

[0053] A dry etching device according to an embodiment of the present invention may include a process chamber (100), a process gas supply unit (150) for supplying process gas to the process chamber (100), a substrate holder (200) disposed within the process chamber (100) on which a substrate structure (10) to be etched is loaded (fixed), a temperature control unit (210) for controlling the temperature of the substrate holder (200), and a protective liner member (500) disposed within the process chamber (100) to protect at least the inner surface of the process chamber (100) from the etching process environment. The dry etching device may be a plasma etching device that uses plasma for etching, and in this case, the dry etching device may include a plasma generation unit (300). The plasma generation unit (300) may be a means (component) for generating plasma or a plasma generation source. Additionally, the dry etching device may include a power supply unit (220) connected to the substrate holder (200). A matcher (230) may be placed between the power supply (220) and the substrate holder (200). In addition, the dry etching device may include a vacuum pump (450) that forms a vacuum in the process chamber (100) and serves as an exhaust.

[0054] The process chamber (100) may be a type of vacuum chamber as an etching chamber. The process gas supplied from the process gas supply unit (150) to the process chamber (100) may include an etching gas and may further include at least one of an additive gas, a catalyst gas, and an inert gas. For example, the process gas may include at least one of a hydrogen-based gas and a chlorine-based gas. The substrate holder (200) may be, for example, an electrostatic chuck (ESC) or may include such a. Additionally, the substrate holder (200) may serve as an electrode (lower electrode).

[0055] The plasma generation unit (300) may include, for example, a coil or a coil-type antenna. In this case, a magnetic field formed by the current applied to the coil (or coil-type antenna) may be formed inside the process chamber (100), and plasma may be generated by the induced electric field resulting therefrom. Power for plasma generation may be supplied to the coil (or coil-type antenna). Alternatively, the plasma generation unit (300) may include an upper electrode, and power may be directly applied to the upper electrode. The location and shape of the plasma generation unit (300) are not limited to those depicted and may vary depending on the circumstances.

[0056] As a non-limiting example, when a plasma generation unit (300) is positioned on the inner upper side of a process chamber (100) facing a substrate holder (200) or positioned adjacent to the inner upper side, a predetermined gas passage or gas nozzle may be provided in the plasma generation unit (300), and said gas passage or gas nozzle may be connected to a process gas supply unit (150).

[0057] The temperature control unit (210) can control the temperature of the substrate holder (200). Various methods may be applied to control the temperature of the substrate holder (200). The temperature of the substrate structure (10) placed thereon may be adjusted according to the temperature of the substrate holder (200). When performing an actual etching process, the set (controlled) temperature of the substrate holder (200) and the temperature of the substrate structure (10) may not match. The substrate structure (10) may be the substrate itself or have a structure in which a film to be processed (film to be etched) is formed on the substrate. The substrate structure (10) may be, for example, a wafer structure.

[0058] The power supply (220) connected to the substrate holder (200) may be, for example, a radio frequency (RF) power generator. If necessary, the power supply (220) may be connected to a plasma generation unit (300). Alternatively, a separate power supply connected to the plasma generation unit (300) may be used. The matching unit (230) positioned between the substrate holder (200) and the power supply (220) may be an RF matching unit. The matching unit (230) may have a matching network configuration.

[0059] According to an embodiment of the present invention, the protective liner member (500) may be composed of at least one of titanium (Ti) and titanium hydride (Ti hydride). In this case, the protective liner member (500) may have excellent corrosion resistance and etch resistance in an etching process environment inside the process chamber (100).

[0060] If the protective liner member (500) contains titanium (Ti) or is substantially composed of titanium (Ti), using a hydrogen-based gas can form titanium hydride TiH2 through the reaction between titanium (Ti) and hydrogen (H). That is, TiH2 can be formed by combining Ti and 2H. TiH2 can be a non-volatile material and can act as an etching stop layer. TiH2 is a material that is impossible or difficult to etch and can play a role in improving the corrosion resistance and etch resistance of the protective liner member (500).

[0061] More specifically, hydrogen-based gases such as HCl, HBr, or HI can generate a plasma containing H+, Cl+, or H+, Br+, or H+, I+, etc., and among these, H+ can combine with Ti to produce TiH2. The generated TiH2 is a non-volatile etching byproduct and can serve as an etching stop layer that is not etched by the etching gas. TiH2 can be formed on the surface of the protective liner member (500) to protect the protective liner member (500).

[0062] According to another example, the process gas used in the dry etching process may include at least one of HCl, HBr, and HI, and at least one of H2 and NH3. A mixed gas including at least one of HCl, HBr, and HI, and at least one of H2 and NH3 may be used as the process gas. In this case, the concentration of H+ is further increased, making it easier to produce a high-quality etching stop layer (i.e., TiH2). As a non-limiting example, the process gas used in the dry etching process may include at least one hydrogen-based gas among HCl, HBr, HI, H2, and NH3.

[0063] If the protective liner member (500) contains titanium (Ti) or is substantially composed of titanium (Ti), then on the surface of the protective liner member (500), a natural oxide film material, TiO, is present.x Although it may exist in a thin thickness, TiO in the etching process environment x It can be decomposed, and as previously explained, titanium hydrides such as TiH2 can be formed.

[0064] Additionally, according to an embodiment of the present invention, if the protective liner member (500) comprises at least one of titanium (Ti) and titanium hydride (Ti hydride) and the process gas comprises a chlorine-based gas, TiCl4 may be formed by the reaction of titanium (Ti) and chlorine (Cl). That is, TiCl4 may be formed by the combination of Ti and 4Cl. Since TiCl4 may be a material having a higher vapor pressure compared to AlCl3, surface contamination of the substrate structure (10) by the reaction product (i.e., the reaction product of the liner material and the process gas) may be prevented or suppressed. The chlorine-based gas may be an etching gas or a process gas that is not an etching gas. As a non-limiting example, the chlorine-based gas may comprise at least one of Cl2, CCl4, BCl3, and HCl.

[0065] The effect resulting from the formation of the aforementioned TiCl4 may be even more significant in low-temperature dry etching processes. In low-temperature dry etching processes, the low vapor pressure of reaction products in a low-temperature environment can lead to problems such as contamination of the substrate surface. In particular, substances such as AlCl3 have low vapor pressure at low temperatures, so they do not volatilize and cause problems by contaminating the substrate to be etched. However, according to an embodiment of the present invention, since reaction products with high vapor pressure, such as TiCl4, can be generated even in low-temperature dry etching processes when chlorine-based gases are used, the problem of substrate contamination by reaction products can be suppressed. Therefore, the configuration of the etching apparatus according to the embodiment can be usefully applied to low-temperature dry etching processes.

[0066] According to one embodiment, the temperature control unit (210) may be configured to control the temperature of the substrate holder (200) to about 50°C or lower, and the dry etching apparatus may be a low temperature type dry etching apparatus. As a non-limiting example, the temperature control unit (210) may be configured to control the temperature of the substrate holder (200) within a range of about -50°C to 50°C or a range of about -30°C to 50°C. However, in the embodiments of the present invention, the range of 'low temperature' is not limited to the aforementioned temperature range. The dry etching apparatus according to the embodiment may be a low temperature type dry etching apparatus, and in some cases, the low temperature type dry etching apparatus may be an ultra-low temperature type dry etching apparatus. Through the low temperature dry etching process, effects such as reduction of problems caused by reaction by-products, improvement of etching performance, and improvement of selectivity can be obtained, for example. However, embodiments of the present invention are not limited to the aforementioned low-temperature dry etching apparatus.

[0067] The protective liner member (500) may be positioned to cover approximately 80% or more of the inner surface (exposed inner surface) of the process chamber (100). The protective liner member (500) may be positioned to cover the entire inner surface (exposed inner surface) of the process chamber (100) (100% or most of it). Additionally, the protective liner member (500) may be configured to be replaceable in the process chamber (100). In other words, the protective liner member (500) may be a part configured to be easily replaceable in the process chamber (100). Since the protective liner member (500) according to the embodiment has excellent corrosion resistance and etching resistance, the PM (preventive maintenance) cycle may be increased, thereby reducing the burden of maintenance / management.

[0068] The dry etching device according to the embodiment may be a plasma etching device, and in this case, the dry etching device may be an ICP (inductively coupled plasma) type etching device or a CCP (capacitively coupled plasma) type etching device. Alternatively, the dry etching device may be an ECR (electron cyclotron resonance) type etching device or a magnetron RIE (reactive ion etching) type etching device. The type of the dry etching device is not limited to the above and may be changed.

[0069] FIG. 2 is a cross-sectional view showing a portion of a protective liner member (500a) for a dry etching apparatus according to one embodiment of the present invention.

[0070] Referring to FIG. 2, the protective liner member (500a) according to the present embodiment may include titanium (Ti) as a main constituent material. About 90% or more or the entirety of the protective liner member (500a) may be composed of titanium (Ti). The protective liner member (500a) may be substantially composed of titanium (Ti). However, on the surface of the protective liner member (500a), a natural oxide film material, TiO x It can exist with a thin thickness.

[0071] FIG. 3 is a cross-sectional view showing a portion of a protective liner member (500b) for a dry etching apparatus according to another embodiment of the present invention.

[0072] Referring to FIG. 3, the protective liner member (500b) according to the present embodiment may include titanium hydride (Ti hydride) as a main constituent material. About 90% or more or the entirety of the protective liner member (500b) may be composed of titanium hydride. The protective liner member (500b) may be substantially composed of titanium hydride. Here, the titanium hydride may be TiH2 or may include it. After forming the protective liner member (500b) itself from titanium hydride, it may be applied to a process chamber.

[0073] FIG. 4 is a cross-sectional view showing a portion of a protective liner member (500c) for a dry etching apparatus according to another embodiment of the present invention.

[0074] Referring to FIG. 4, the protective liner member (500c) according to the present embodiment may include a first layer (L10) and a second layer (L20) in contact with the first layer (L10). The second layer (L20) may be positioned to be exposed to or adjacent to the etching process environment inside the chamber more than the first layer (L10). In other words, the second layer (L20) may be positioned to face the inside of the chamber (the center of the chamber) more than the first layer (L10).

[0075] The first layer (L10) may include titanium, and the second layer (L20) may include titanium hydride. About 90% or more or the entirety of the first layer (L10) may be composed of titanium. The first layer (L10) may be substantially composed of titanium. About 90% or more or the entirety of the second layer (L20) may be composed of titanium hydride. The second layer (L20) may be substantially composed of titanium hydride. The titanium hydride may be TiH2 or may include it. The first layer (L10) and the second layer (L20) may have mutually excellent bonding characteristics.

[0076] FIG. 5 is a cross-sectional view showing a portion of a protective liner member (500d) for a dry etching apparatus according to another embodiment of the present invention.

[0077] Referring to FIG. 5, the protective liner member (500d) according to the present embodiment may include a liner substrate layer (S11) and a coating layer (L11) in contact with the liner substrate layer (S11). The coating layer (L11) may be positioned to be exposed to or adjacent to the etching process environment inside the chamber rather than the liner substrate layer (S11). In other words, the coating layer (L11) may be positioned to face the inside of the chamber (the center of the chamber) rather than the liner substrate layer (S11).

[0078] The liner substrate layer (S11) may include a metallic material. The metallic material may be a material other than titanium or titanium hydride, and may include, for example, at least one of a metal, an alloy, and a metal compound. The coating layer (L11) may include at least one of titanium and titanium hydride. About 90% or more or the entirety of the coating layer (L11) may be composed of titanium or titanium hydride. Alternatively, the coating layer (L11) may include both titanium and titanium hydride.

[0079] FIG. 6 is a cross-sectional view showing a portion of a protective liner member (500e) for a dry etching apparatus according to another embodiment of the present invention.

[0080] Referring to FIG. 6, a protective liner member (500e) according to the present embodiment may include a liner substrate layer (S12), a first coating layer portion (L12) in contact with the liner substrate layer (S12), and a second coating layer portion (L22) in contact with the first coating layer portion (L12). The first coating layer portion (L12) may be disposed between the liner substrate layer (S12) and the second coating layer portion (L22). The second coating layer portion (L22) may be disposed to be exposed to or adjacent to the etching process environment inside the chamber than the first coating layer portion (L12). In other words, the second coating layer portion (L22) may be disposed to face the inside of the chamber (the center of the chamber) more than the first coating layer portion (L12).

[0081] The liner substrate layer (S12) may include a metallic material. The metallic material may be a material other than titanium or titanium hydride, and may include, for example, at least one of a metal, an alloy, and a metal compound. The first coating layer (L12) may include titanium, and the second coating layer (L22) may include titanium hydride. About 90% or more or the entirety of the first coating layer (L12) may be composed of titanium. The first coating layer (L12) may be substantially composed of titanium. About 90% or more or the entirety of the second coating layer (L22) may be composed of titanium hydride. The second coating layer (L22) may be substantially composed of titanium hydride. Titanium hydride may be TiH2 or may include it.

[0082] As shown in FIGS. 2 to 6, protective liner members (500a to 500e) having various configurations can be manufactured, and a suitably selected protective liner member can be applied to the process chamber (etching chamber) of a dry etching device.

[0083] Figure 7 is a graph showing the change in vapor pressure of TiCl4 and AlCl3 with temperature.

[0084] Referring to FIG. 7, it can be seen that TiCl4, a reaction product that may be generated in the protective liner member of a dry etching apparatus according to an embodiment of the present invention, has a significantly high vapor pressure even in the low-temperature region. On the other hand, it can be seen that AlCl3, which may be generated from Al-based materials, has a significantly low vapor pressure in the low-temperature region. Therefore, AlCl3 does not volatilize under low-temperature conditions and can easily contaminate the substrate to be etched. However, in the embodiment of the present invention, TiCl4, which may be generated through the use of a chlorine-based gas, has a high vapor pressure even at low temperatures, so the problem of substrate contamination can be effectively suppressed / prevented.

[0085] Additionally, according to another embodiment of the present invention, a protective liner member for a dry etching apparatus may be provided, wherein the protective liner member is disposed within a process chamber of the dry etching apparatus to protect at least an inner surface of the process chamber from an etching process environment, and the protective liner member comprises at least one of As (arsenic), B (boron), Cr (chromium), Ga (gallium), Ge (germanium), Nb (niobium), Sb (antimony), Se (selenium), Si (silicon), Sn (stannic), V (vanadium), W (tungsten), and Ti (titanium), and at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti is disposed to be exposed to or adjacent to the etching process environment. The above protective liner member may include any one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, or be composed of any one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, or include two or more materials among As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti.

[0086] Additionally, according to another embodiment of the present invention, a dry etching apparatus may be provided comprising: a process chamber; a process gas supply unit for supplying process gas to the process chamber; a substrate holder disposed within the process chamber on which a substrate structure to be etched is loaded; a temperature control unit for controlling the temperature of the substrate holder; and a protective liner member disposed within the process chamber to protect at least one inner surface of the process chamber from an etching process environment, comprising at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, wherein at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti is disposed to be exposed to or adjacent to the etching process environment. The above protective liner member may include any one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, or be composed of any one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, or include two or more materials among As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti.

[0087] The temperature control unit may be configured to control the temperature of the substrate holder to about 50°C or lower, and the dry etching device may be a low-temperature dry etching device. As a non-limiting example, the temperature control unit may be configured to control the temperature of the substrate holder within a range of about -50°C to 50°C or a range of about -30°C to 50°C. The process gas may include a chlorine-based gas. As a non-limiting example, the chlorine-based gas may include at least one of Cl2, CCl4, BCl3, and HCl.

[0088] At least one of the above-mentioned As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti can react with the chlorine-based gas in a dry etching process to produce a reaction product with a high vapor pressure. Therefore, when using a protective liner member comprising at least one of the above-mentioned As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, substrate contamination problems can be suppressed or prevented. In particular, substrate contamination problems can be effectively suppressed or prevented as a reaction product with a high vapor pressure is formed in a low-temperature dry etching process.

[0089] The reaction products that can be formed by the reaction of the above chlorine-based gas with the above As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, or Ti are summarized in Table 1 below.

[0090] Chemical formulaChemical nameAsCl3arsenic trichlorideBCl3boron trichlorideCrO2Cl2chromium oxychlorideGaCl3gallium trichlorideGeCl4germanium chlorideGeHCl3trichloro germaneNbCl5niobium chlorideSbCl3antimony trichlorideSbCl5antimony pentachlorideSeOCl2selenium oxychlorideSiCl4silicon tetrachlorideSnCl4stannic chlorideTiCl4titanium tetrachlorideVCl4vanadium tetrachlorideVOCl3vanadium oxytrichlorideWCl5tungsten chloride

[0091] FIG. 8 is a graph showing the vapor temperature characteristics of a reaction product (by-product) that can be formed by the reaction of a material of a protective liner member according to an embodiment of the present invention with a chlorine-based gas. FIG. 8 shows the vapor temperatures for pressures of 0.001 Torr, 0.0001 Torr, and 0.00001 Torr for each material. A low vapor temperature for a corresponding pressure may mean that the vapor pressure is high.

[0092] Referring to FIG. 8, it can be seen that reaction products (by-products) that can be formed by the reaction of a protective liner member material according to an embodiment of the present invention with a chlorine-based gas, namely AsCl3, BCl3, CrO2Cl2, GaCl3, GeCl4, GeHCl3, NbCl5, SbCl3, SbCl5, SeOCl2, SiCl4, SnCl4, TiCl4, VCl4, VOCl3, and WCl5, exhibit vapor temperature characteristics in the range of about -15°C to about -155°C. Accordingly, these materials can have high vapor pressure and can not cause or hardly cause substrate contamination problems in a dry etching (e.g., low-temperature dry etching) process.

[0093] For embodiments in which the protective liner member comprises at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, W, and Ti, the features described with reference to FIGS. 1 to 6 may be applied in the same or similarly.

[0094] According to the embodiments of the present invention described above, a protective liner member having excellent physical properties capable of effectively protecting the inner wall of a chamber, etc., from a dry etching process environment can be realized. Furthermore, according to the embodiments of the present invention, a protective liner member capable of preventing / suppressing substrate contamination problems caused by reaction products having low vapor pressure in low-temperature dry etching can be realized. Additionally, according to the embodiments of the present invention, a dry etching apparatus applying the above-described protective liner member can be provided.

[0095] According to one embodiment, excellent corrosion resistance, etch resistance, and other physical properties can be secured by applying at least one material among titanium and titanium hydride to a protective liner member and, if necessary, forming titanium hydride (e.g., TiH2) on the surface of the protective liner member using a hydrogen-based gas. According to one embodiment, by applying at least one material among titanium and titanium hydride to a protective liner member and using a chlorine-based gas to form a reaction product with a high vapor pressure such as TiCl4, the problem of substrate contamination caused by a reaction product with a low vapor pressure in low-temperature dry etching can be prevented or suppressed. According to one embodiment, the protective liner member is configured to form a reaction product with a high vapor pressure, such as at least one of AsCl3, BCl3, CrO2Cl2, GaCl3, GeCl4, GeHCl3, NbCl5, SbCl3, SbCl5, SeOCl2, SiCl4, SnCl4, TiCl4, VCl4, VOCl3, and WCl5, thereby preventing or suppressing substrate contamination problems caused by reaction products with a low vapor pressure during dry etching (low-temperature dry etching). By applying the protective liner member according to the embodiments, not only can excellent dry etching (e.g., low-temperature dry etching) characteristics be secured, but the PM (preventive maintenance) cycle of the etching device can also be increased, thereby reducing the burden of maintenance / management and achieving cost reduction effects.

[0096] A person skilled in the art will understand that the protective liner member for a dry etching apparatus according to the embodiments described with reference to FIGS. 1 to 8, the dry etching apparatus including the same, and the related method may be variously substituted, changed, and modified within the scope of the technical concept of the present invention. For example, it will be understood that the structure / shape of the protective liner member and the configuration of the dry etching apparatus are not limited to those described with reference to FIGS. 1 to 8 and may be varied in many ways. Therefore, the scope of the invention should not be determined by the described embodiments but by the technical concept described in the claims.

Claims

1. As a protective liner member for a dry etching apparatus, The above protective liner member is disposed within the process chamber of the dry etching device to protect at least the inner surface of the process chamber from the etching process environment, and The above protective liner member comprises at least one of titanium and titanium hydride, and A protective liner member for a dry etching apparatus, wherein at least one of the titanium and titanium hydride is disposed to be exposed to or adjacent to the etching process environment.

2. In Paragraph 1, The above titanium hydride is a protective liner member containing TiH2.

3. In Paragraph 1, A protective liner member in which 90% or more or the whole is composed of the titanium.

4. In Paragraph 1, A protective liner member in which 90% or more or the whole is composed of the titanium hydride.

5. In Paragraph 1, The above protective liner member includes a first layer and a second layer in contact with the first layer, and the second layer is positioned to be exposed to or adjacent to the etching process environment more than the first layer. A protective liner member in which the first layer comprises the titanium and the second layer comprises the titanium hydride.

6. In Paragraph 1, The above protective liner member comprises a liner substrate layer and a coating layer in contact with the liner substrate layer, and the coating layer is disposed to be exposed to or adjacent to the etching process environment than the liner substrate layer. A protective liner member in which the above-mentioned liner substrate layer comprises a metallic material, and the above-mentioned coating layer comprises at least one of titanium and titanium hydride.

7. In Paragraph 1, The above protective liner member comprises a liner substrate layer, a first coating layer portion in contact with the liner substrate layer, and a second coating layer portion in contact with the first coating layer portion, wherein the second coating layer portion is disposed to be exposed to or adjacent to the etching process environment than the first coating layer portion. A protective liner member comprising a liner substrate layer containing a metallic material, a first coating layer containing titanium, and a second coating layer containing titanium hydride.

8. In Paragraph 1, The above protective liner member is a protective liner member positioned to cover at least 80% of the inner surface of the process chamber.

9. In Paragraph 1, The above protective liner member is a protective liner member configured to be replaceable in the process chamber.

10. In Paragraph 1, The above dry etching device includes a substrate holder on which a substrate structure to be etched is loaded, and a temperature control unit for controlling the temperature of the substrate holder. The above temperature control unit is configured to control the temperature of the substrate holder to 50℃ or lower, and the dry etching device is a protective liner member that is a low-temperature dry etching device.

11. As a dry etching device, Process chamber; A process gas supply unit for supplying process gas to the above process chamber; A substrate holder disposed within the above-mentioned process chamber, on which a substrate structure to be etched is loaded; A temperature control unit for controlling the temperature of the above substrate holder; and A dry etching apparatus comprising: a protective liner member disposed within the process chamber to protect at least the inner surface of the process chamber from an etching process environment, the liner member comprising at least one of titanium and titanium hydride, wherein at least one of the titanium and titanium hydride is disposed to be exposed to or adjacent to the etching process environment.

12. In Paragraph 11, A dry etching device in which 90% or more or the entire portion of the above protective liner member is composed of the above titanium.

13. In Paragraph 11, A dry etching apparatus in which 90% or more or the entirety of the above protective liner member is composed of the above titanium hydride.

14. In Paragraph 11, The above protective liner member includes a first layer and a second layer in contact with the first layer, and the second layer is positioned to be exposed to or adjacent to the etching process environment more than the first layer. A dry etching apparatus in which the first layer comprises the titanium and the second layer comprises the titanium hydride.

15. In Paragraph 11, The above protective liner member comprises a liner substrate layer and a coating layer in contact with the liner substrate layer, and the coating layer is disposed to be exposed to or adjacent to the etching process environment than the liner substrate layer. A dry etching apparatus in which the above-mentioned liner substrate layer comprises a metallic material, and the above-mentioned coating layer comprises at least one of titanium and titanium hydride.

16. In Paragraph 11, The above protective liner member comprises a liner substrate layer, a first coating layer portion in contact with the liner substrate layer, and a second coating layer portion in contact with the first coating layer portion, wherein the second coating layer portion is disposed to be exposed to or adjacent to the etching process environment than the first coating layer portion. A dry etching apparatus in which the above-mentioned liner substrate layer comprises a metallic material, the above-mentioned first coating layer comprises titanium, and the above-mentioned second coating layer comprises titanium hydride.

17. In Paragraph 11, The above protective liner member is configured to be replaceable in the process chamber.

18. In Paragraph 11, The above temperature control unit is configured to control the temperature of the substrate holder to 50℃ or lower, and the dry etching device is a low-temperature dry etching device.

19. In Paragraph 11, The above process gas is a dry etching apparatus comprising at least one of a hydrogen-based gas and a chlorine-based gas.

20. In Paragraph 11, The above dry etching device is a dry etching device that is a plasma etching device using plasma for etching.

21. As a protective liner member for a dry etching apparatus, The above protective liner member is disposed within the process chamber of the dry etching device to protect at least the inner surface of the process chamber from the etching process environment, and The above protective liner member comprises at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W, and A protective liner member for a dry etching apparatus, wherein at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W is disposed to be exposed to or adjacent to the etching process environment.

22. As a dry etching device, Process chamber; A process gas supply unit for supplying process gas to the above process chamber; A substrate holder disposed within the above-mentioned process chamber, on which a substrate structure to be etched is loaded; A temperature control unit for controlling the temperature of the above substrate holder; and A dry etching apparatus comprising: a protective liner member disposed within the process chamber to protect at least the inner surface of the process chamber from an etching process environment, comprising at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W, wherein at least one of As, B, Cr, Ga, Ge, Nb, Sb, Se, Si, Sn, V, and W is disposed to be exposed to or adjacent to the etching process environment.

23. In Paragraph 22, The above temperature control unit is configured to control the temperature of the substrate holder to 50℃ or lower, and the dry etching device is a low-temperature dry etching device.

24. In Paragraph 22, The above process gas is a dry etching apparatus containing a chlorine-based gas.

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