Radiation battery

Abstract

A radiation battery according to an embodiment of the present disclosure may comprise: a core layer which includes a central core comprising a radiation source, and central fins; first layers, each including a first semiconductor which is a P-type semiconductor, a first core stacked on the central core in a first direction, and first fins protruding from the first core and stacked on the central fins; and second layers, each including a second semiconductor which is an N-type semiconductor, a second core stacked on the first core in the first direction, and second fins protruding from the second core and stacked on the first fins.

Description

radiation battery

[0001] This application claims the benefit of priority based on Korean Patent Application No. 2024-0184082 filed on December 11, 2024, and all contents disclosed in the document of said Korean Patent Application are incorporated herein as part of this specification.

[0002] A radioisotope is an element that decays into a stable isotope while emitting radiation. Known modes of radioisotope decay include alpha decay, beta decay, and gamma decay. Depending on the type of radioisotope, it emits alpha, beta, or gamma rays as it decays. Meanwhile, the time it takes for a radioisotope to decay and reduce its radioactivity to half of its initial level is called the half-life. The type of radiation emitted during decay and the half-life are determined by the type of radioisotope.

[0003] Generally, a betavoltaic cell is a battery that utilizes beta rays, which are radiation emitted from radioactive isotopes. Beta rays are absorbed by a PN junction semiconductor to form electron-hole pairs from the depletion layer, and the formed electrons and holes can be used as an electrical power source. In other words, a betavoltaic cell is a battery designed to convert the nuclear fission energy of a radioactive isotope into electrical energy for use as an electrical power source.

[0004] The problem to be solved in the embodiments of the present disclosure may be to provide a radiation cell with improved power conversion efficiency.

[0005] The problem to be solved in the embodiments of the present disclosure may be to provide a radiation cell with improved durability.

[0006] The problem to be solved in the embodiments of the present disclosure may be to provide a radiation battery with improved heat dissipation performance.

[0007] The problems to be solved in the embodiments of the present disclosure are not limited to those described above.

[0008] A radiation cell according to an embodiment of the present disclosure may include a core layer comprising a radiation source.

[0009] A radiation cell according to an embodiment of the present disclosure may include a first layer that is stacked in a first direction with the core layer and includes a first semiconductor that is a P-type semiconductor.

[0010] A radiation cell according to an embodiment of the present disclosure may include a second layer that is stacked in the first direction with the first layer and includes a second semiconductor that is an N-type semiconductor.

[0011] A radiation cell according to an embodiment of the present disclosure may include a core comprising the radiation source, the first semiconductor, and the second semiconductor stacked in the first direction.

[0012] A radiation cell according to an embodiment of the present disclosure may include a pin extending from the core in a second direction perpendicular to the first direction.

[0013] The first layer according to an embodiment of the present disclosure may include a first-1 layer disposed in the first direction of the core layer.

[0014] The first layer according to an embodiment of the present disclosure may include a first-2 layer disposed in a direction opposite to that of the first-1 layer with respect to the core layer.

[0015] The second layer according to an embodiment of the present disclosure may include a second-1 layer disposed in the first direction of the core layer.

[0016] The second layer according to an embodiment of the present disclosure may include a second-2 layer disposed in a direction opposite to that of the second-1 layer with respect to the core layer.

[0017] The first semiconductor according to an embodiment of the present disclosure may include a first-1 core semiconductor that is included in the first-1 layer and is in contact with the core layer.

[0018] The first semiconductor according to an embodiment of the present disclosure may include a first-2 core semiconductor that is included in the first-2 layer and contacts the core layer in a direction opposite to that of the first-1 core semiconductor with respect to the core layer.

[0019] The second semiconductor according to an embodiment of the present disclosure may include a second-1 core semiconductor that is included in the second-1 layer and is in contact with the first-1 core semiconductor.

[0020] The second semiconductor according to an embodiment of the present disclosure may include a second-2 core semiconductor that is included in the second-2 layer and contacts the first-2 core semiconductor in a direction opposite to that of the second-1 core semiconductor with respect to the core layer.

[0021] The core layer according to an embodiment of the present disclosure may include a first core pin semiconductor that is a P-type semiconductor, which extends from the radiation source in the second direction to form a part of the pin.

[0022] The core layer according to an embodiment of the present disclosure may include a second core pin semiconductor that extends in the second direction from the first core pin semiconductor to form a part of the pin and is an N-type semiconductor.

[0023] According to an embodiment of the present disclosure, the first layer may include a first pin semiconductor that extends in the second direction from the first semiconductor to form a part of the pin and is an N-type semiconductor.

[0024] The core layer according to an embodiment of the present disclosure may include a core electrode that forms a part of the core and is electrically connected to the first semiconductor of the first layer.

[0025] A radiation cell according to an embodiment of the present disclosure may include a shielding layer that surrounds the radiation source and extends in the first direction.

[0026] A radiation cell according to an embodiment of the present disclosure may include an insulating layer surrounding at least a portion of the pin.

[0027] A radiation cell according to an embodiment of the present disclosure may include a cover layer comprising a cover electrode that is stacked in the first direction with the core layer, the first layer, and the second layer, and is electrically connected to the second semiconductor.

[0028] A radiation cell according to an embodiment of the present disclosure may include a cover electrode and a core electrode spaced apart in the first direction.

[0029] A radiation cell according to an embodiment of the present disclosure may include a first wiring that extends in the first direction and connects the core electrode and the cover electrode.

[0030] A radiation cell according to an embodiment of the present disclosure may include a core layer including a central core including a radiation source and a central pin.

[0031] A radiation cell according to an embodiment of the present disclosure may include a first layer comprising a first core that is stacked in a first direction on the central core and a first pin that protrudes and extends from the first core and is stacked on the central pin.

[0032] A radiation cell according to an embodiment of the present disclosure may include a second semiconductor that is an N-type semiconductor, a second core that is stacked in the first direction on the first core, and a second fin that is extended and protrudes from the second core and is stacked on the first fin.

[0033] According to an embodiment of the present disclosure, the first layer may be a plurality of layers.

[0034] According to an embodiment of the present disclosure, a plurality of first layers may include a first-1 layer and a first-2 layer spaced apart from the first-1 layer.

[0035] The core layer according to an embodiment of the present disclosure may be disposed between the first-1 layer and the first-2 layer.

[0036] According to an embodiment of the present disclosure, the second layer may be a plurality of layers.

[0037] According to an embodiment of the present disclosure, a plurality of the second layers may include a second-1 layer and a second-2 layer spaced apart from the second-1 layer.

[0038] The core layer according to an embodiment of the present disclosure may be disposed between the second-1 layer and the second-2 layer.

[0039] The first semiconductor according to the embodiment of the present disclosure may be a plurality of such semiconductors.

[0040] According to an embodiment of the present disclosure, a plurality of first semiconductors may include a first-1 core semiconductor in contact with the core layer and a first-2 core semiconductor in contact with the core layer in a direction opposite to that of the first-1 core semiconductor with respect to the core layer.

[0041] According to an embodiment of the present disclosure, the second semiconductor may be in the number of cases.

[0042] According to an embodiment of the present disclosure, a plurality of second semiconductors may include a second-1 core semiconductor in contact with the first-1 core semiconductor and a second-2 core semiconductor in contact with the first-2 core semiconductor in a direction opposite to that of the second-1 core semiconductor with respect to the core layer.

[0043] According to an embodiment of the present disclosure, the core layer may include a first core pin semiconductor that is a P-type semiconductor, which extends from the radiation source in a second direction intersecting the first direction to form a part of the center pin.

[0044] The core layer according to an embodiment of the present disclosure may include a second core pin semiconductor that extends in the second direction from the first core pin semiconductor to form a part of the center pin and is an N-type semiconductor.

[0045] According to an embodiment of the present disclosure, the first layer may include a first pin semiconductor that is an N-type semiconductor, extending from the first semiconductor in a second direction intersecting the first direction to form a part of the first pin.

[0046] The core layer according to an embodiment of the present disclosure may include a core electrode that forms a part of the central core and is electrically connected to the first semiconductor of the first layer.

[0047] A radiation cell according to an embodiment of the present disclosure can have improved power conversion efficiency due to a stacked structure of layers including a radiation source, a first type semiconductor, and a second type semiconductor.

[0048] A radiation cell according to an embodiment of the present disclosure can have improved durability due to a stacked structure of layers including a core and a fin.

[0049] A radiation cell according to an embodiment of the present disclosure may have improved heat dissipation performance due to a fin extending from the core.

[0050] The effects according to the embodiments of the present disclosure are not limited to those described above.

[0051] The drawings shown in this disclosure are according to embodiments, and the ratios of the width, height, or height (or thickness) of each component are intended to explain this disclosure in detail and may differ from the actual. Additionally, in the coordinate system shown in the drawings, each axis (e.g., X-axis, Y-axis, and Z-axis) may have an arrow pointing in a positive direction (e.g., +X-axis direction, +Y-axis direction, and +Z-axis direction) and a direction exactly opposite to the direction pointed in by the arrow (a direction rotated 180 degrees) may be a negative direction (e.g., -X-axis direction, -Y-axis direction, and -Z-axis direction).

[0052] FIG. 1 is a perspective view of a radiation cell according to an embodiment of the present disclosure.

[0053] FIG. 2 is an exploded view of a radiation cell according to an embodiment of the present disclosure.

[0054] FIG. 3 is a cross-sectional view of a radiation cell according to an embodiment of the present disclosure.

[0055] FIG. 4 is a cross-sectional view of a radiation cell according to an embodiment of the present disclosure.

[0056] FIG. 5 is a perspective view of a part of a radiation cell according to an embodiment of the present disclosure.

[0057] FIG. 6 is a perspective view of a part of a radiation cell according to an embodiment of the present disclosure.

[0058] FIG. 7 is a perspective view of a part of a radiation cell according to an embodiment of the present disclosure.

[0059] FIG. 8 is a perspective view of a part of a radiation cell according to an embodiment of the present disclosure.

[0060] FIG. 9 is a part of an exploded view of a radiation cell according to an embodiment of the present disclosure.

[0061] FIG. 10 is a perspective view of a part of a radiation cell according to an embodiment of the present disclosure.

[0062] FIG. 11 is a part of an exploded view of a radiation cell according to an embodiment of the present disclosure.

[0063] Prior to the detailed description of the present invention, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings. Instead, they should be interpreted in a sense and concept consistent with the technical spirit of the present invention, based on the principle that the inventor may appropriately define the concept of the terms to best describe his invention. Accordingly, the embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of the present invention and do not represent all aspects of the technical spirit of the present invention. Therefore, it should be understood that various equivalents and modifications capable of replacing them may exist at the time of filing this application.

[0064] Identical reference numbers or symbols in each drawing attached to this specification represent parts or components that perform substantially the same function. For convenience of explanation and understanding, the same reference numbers or symbols may be used to describe different embodiments. That is, even if components having the same reference number are depicted in multiple drawings, the multiple drawings do not all represent a single embodiment.

[0065] In the following description, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "comprising" or "constituting" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0066] In addition, it should be noted in advance that expressions such as upper side, top, lower side, bottom, side, front, and rear in the following description are based on the direction depicted in the drawings, and may be expressed differently if the direction of the object changes.

[0067] Additionally, in this specification and claims, terms including ordinal numbers, such as "first," "second," etc., may be used to distinguish between components. These ordinal numbers are used to distinguish identical or similar components from one another, and the meaning of the terms should not be limited by the use of such ordinal numbers. For example, the order of use or arrangement of components combined with such ordinal numbers should not be limited by the number. If necessary, each ordinal number may be used interchangeably.

[0068] Embodiments of the present invention will be described below with reference to the attached drawings. However, the scope of the present invention is not limited to the embodiments presented. For example, a person skilled in the art who understands the scope of the present invention may propose other embodiments that fall within the scope of the concept of the present invention by adding, changing, or deleting components, and such embodiments shall also be deemed to be within the scope of the concept of the present invention. In the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0069] FIG. 1 is a perspective view of a radiation cell (1) according to one embodiment of the present disclosure.

[0070] A radiation cell (1) may include assemblies (100). Multiple assemblies (100) may be arranged. The radiation cell (1) may be a structure formed by stacking multiple assemblies (100). The radiation cell (1) may be a structure formed by stacking multiple assemblies (100) in one direction, but is not limited thereto. The radiation cell (1) may be a structure in which multiple assemblies (100) electrically connected to each other are packaged. Hereinafter, with reference to FIGS. 1 to 11, any one of the multiple assemblies (100) that are assembled together to form a radiation cell (1) will be described as an example. Multiple individual unit assemblies (100) described with reference to FIGS. 1 to 11 may be assembled together to form a radiation cell (1).

[0071] The radiation cell (1) may include a plurality of layers (110, 120, 130, 140, 150, 160, 170). The plurality of layers (110, 120, 130, 140, 150, 160, 170) may be stacked in one direction. One of the plurality of layers (110, 120, 130, 140, 150, 160, 170) may be a core layer (110).

[0072] In this specification, the first direction may refer to the Z-axis direction. The first direction (Z-axis direction) may refer to a direction perpendicular to the surface of a core layer (110) which is one of a plurality of layers (110, 120, 130, 140, 150, 160, 170). The second direction may refer to the X-axis direction. The second direction (X-axis direction) may refer to a direction parallel to the surface of the core layer (110) and may intersect with the first direction (Z-axis direction). For example, the second direction (X-axis direction) may be perpendicular to the first direction (Z-axis direction). The third direction (Y-axis direction) may refer to a direction parallel to the surface of the core layer (110) and intersect with the second direction (X-axis direction), and may intersect with the first direction (Z-axis direction). For example, the third direction (Y-axis direction) may be perpendicular to the first direction (Z-axis direction) and the second direction (X-axis direction). The first direction (Z) may mean a direction extended along the Z-axis. The first direction (Z) may mean a direction in which a plurality of layers (110, 120, 130, 140, 150) are stacked. The first direction (Z) may be named the “stacking direction.” The first direction (Z) may be either the +Z direction or the -Z direction.

[0073] A radiation cell (1) may include a core (101) and a fin (102) formed by a plurality of stacked layers (110, 120, 130, 140, 150, 160, 170). For example, the plurality of layers may be stacked in a first direction. The core (101) may be part of the plurality of stacked layers (110, 120, 130, 140, 150, 160, 170). The fin (102) may protrude and extend from the core (101). Specifically, the fin (102) may protrude and extend from the core (101) in another direction intersecting the first direction. For example, the fin (102) may protrude and extend from the core (101) in a second direction or a third direction.

[0074] The pins (102) may be arranged in multiple numbers. In one example, the multiple pins (102) may all protrude and extend toward the same direction. In another example, some of the multiple pins (102) may protrude and extend toward one direction, and some of the others may protrude and extend toward another direction. For example, some of the multiple pins (102) may protrude and extend toward the +2nd direction, and some of the others may protrude and extend toward the -2nd direction.

[0075] Among the plurality of pins (102), at least some of the pins (102) that protrude and extend in the same direction may be spaced apart from each other. For example, among the plurality of pins (102), at least some of the pins (102) that protrude and extend in the same direction may be spaced apart from each other with respect to the first direction or the third direction.

[0076] The cross-sectional area in a plane perpendicular to the first direction of the core (101) may be larger than the cross-sectional area in a plane perpendicular to the first direction of the pin (102). Accordingly, the contact area between structures disposed on the core (101) (e.g., a radiation source, a first type semiconductor, and a second type semiconductor to be described later) can be increased to improve power generation efficiency.

[0077] The surface area of ​​the pin (102) may be larger than the surface area of ​​the core (101). Accordingly, heat generated in the core (101) can be released to the outside of the radiation cell (1) through the pin (102).

[0078] The radiation cell (1) may include a core layer (110). The core layer (110) may be one of a plurality of layers (110, 120, 130, 140, 150, 160, 170).

[0079] The radiation cell (1) may include a first layer (120, 130). The first layer (120, 130) may be stacked on a core layer (110). At least some of the first layer (120, 130) may be in contact with the core layer (110). The first layer (120, 130) may include a P-type semiconductor. In this specification, the P-type semiconductor may include, for example, silicon or diamond doped with impurities such as boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or may include a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0080] The first layer (120, 130) may be multiple, and the multiple first layers (120, 130) may be stacked along the first direction. The multiple first layers (120, 130) may be spaced apart from each other with respect to the first direction. The first layer (120, 130) may include a first-1 layer (120) disposed on one side of the core layer (110) (e.g., +first direction) and a first-2 layer (130) disposed on the other side of the core layer (110). Here, the other side of the core layer (110) may be a side disposed opposite to the one side of the core layer (110), and, for example, the other side may mean -first direction. The core layer (110) may be disposed between the first-1 layer (120) and the first-2 layer (130).

[0081] The radiation cell (1) may include a second layer (140, 150). At least a portion of the second layer (140, 150) may be in contact with the first layer (120, 130). The second layer (140, 150) may include an N-type semiconductor. In this specification, the N-type semiconductor may include, for example, silicon or diamond doped with impurities such as nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table, or a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table. At least a portion of the second layer (140, 150) may be in contact with the first layer (120, 130) to form a bonding surface. At this time, the junction surface can be called a PN junction, and a depletion layer can be formed around the PN junction.

[0082] The second layer (140, 150) may be multiple, and the multiple second layers (140, 150) may be stacked along the first direction. The multiple second layers (140, 150) may be spaced apart from each other with respect to the first direction. The second layer (140, 150) may include a second-1 layer (140) disposed on one side of the core layer (110) (e.g., +first direction) and a second-2 layer (150) disposed on the other side of the core layer (110). Here, the other side of the core layer (110) may be a side disposed opposite to the one side of the core layer (110), and, for example, the other side may mean -first direction. The core layer (110) may be disposed between the second-1 layer (140) and the second-2 layer (150).

[0083] The first layer (120, 130) may be positioned adjacent to the core layer (110) relative to the second layer (140, 150). The first-1 layer (120) may be positioned between the core layer (110) and the second-1 layer (140). The first-2 layer (130) may be positioned between the core layer (110) and the second-2 layer (150).

[0084] The radiation cell (1) may include a cover layer (160, 170). A second layer (140, 150) may be laminated on the first layer (120, 130). At least a portion of the cover layer (160, 170) may be in contact with the second layer (140, 150). The cover layer (160, 170) may include a heat dissipation material or a shielding material. For example, the heat dissipation material may include one or more of a metal (e.g., copper, gold, silver, and aluminum, etc.), a ceramic (e.g., alumina and boron nitride, etc.), a heat dissipation resin, and a phase change material, but is not limited thereto. For example, the shielding material may include one or more of a resin, a metal (e.g., lead and aluminum), paper, and wood, but is not limited thereto.

[0085] There may be multiple cover layers (160, 170), and multiple cover layers (160, 170) may be stacked along a first direction. Multiple cover layers (160, 170) may be spaced apart from each other with respect to the first direction. The cover layers (160, 170) may include a first cover layer (160) disposed on one side of the core layer (110) (e.g., +first direction) and a second cover layer (170) disposed on the other side of the core layer (110). Here, the other side of the core layer (110) may be a side disposed opposite to the one side of the core layer (110), and, for example, the other side may mean -first direction. The core layer (110) may be disposed between the first cover layer (160) and the second cover layer (170).

[0086] The second layer (140, 150) may be positioned adjacent to the core layer (110) relative to the cover layer (160, 170). The second-1 layer (140) may be positioned between the first-1 layer (120) and the first cover layer (160). The second-2 layer (150) may be positioned between the first-2 layer (130) and the second cover layer (170).

[0087] FIG. 2 is an exploded view of a radiation cell (1) according to an embodiment of the present disclosure.

[0088] Each of the plurality of layers (110, 120, 130, 140, 150, 160, 170) may include a core (111, 121, 131, 141, 151, 161, 171) and a pin (112, 122, 132, 142, 152, 162, 172). The core (111, 121, 131, 141, 151, 161, 171) of each of the plurality of layers (110, 120, 130, 140, 150, 160, 170) may be stacked in a first direction. Each pin (112, 122, 132, 142, 152, 162, 172) of a plurality of layers (110, 120, 130, 140, 150, 160, 170) can be stacked in a first direction. For details regarding the core (111, 121, 131, 141, 151, 161, 171) and pin (112, 122, 132, 142, 152, 162, 172), the description of the core (101) and pin (102) of FIG. 1 may be referenced, provided there is no contradiction.

[0089] The core (101) of FIG. 1 may be a structure in which a core (111, 121, 131, 141, 151, 161, 171) of each of a plurality of layers (110, 120, 130, 140, 150, 160, 170) is stacked in a first direction.

[0090] The pin (102) of FIG. 1 may be a structure in which pins (112, 122, 132, 142, 152, 162, 172) of each of the plurality of layers (110, 120, 130, 140, 150, 160, 170) are stacked in a first direction.

[0091] The core layer (110) may include a central core (111). The core layer (110) may include a central fin (112) that protrudes and extends from the central core (111).

[0092] The first layer (120, 130) may include a first core (121, 131) and a first pin (122, 132) extending outward from the first core (121, 131). At least a portion of the first core (121, 131) may be in contact with the center core (111). At least a portion of the first pin (122, 132) may be in contact with the center pin (112).

[0093] The layer (120) may include a first-1 core (121). At least a portion of the first-1 core (121) may be in contact with the center core (111). The first-1 layer (120) may include a first-1 pin (122). At least a portion of the first-1 pin (122) may be in contact with the center pin (112).

[0094] The layer (130) may include a first-second core (131). At least a portion of the first-second core (131) may be in contact with the center core (111). The first-second layer (130) may include a first-second pin (132). At least a portion of the first-second pin (132) may be in contact with the center pin (112).

[0095] The center core (111) may be positioned between the first-1 core (121) and the first-2 core (131). The center pin (112) may be positioned between the first-1 pin (122) and the first-2 pin (132). The first-1 core (121) and the first-2 core (131) may be positioned in opposite directions relative to the center core (111). The first-1 pin (122) and the first-2 pin (132) may be positioned in opposite directions relative to the center pin (112).

[0096] Layers (140, 150) may include a second core (141, 151) and a second pin (142, 152) extending outward from the second core (141, 151). At least a portion of the second core (141, 151) may be in contact with the first core (121, 131). At least a portion of the second pin (142, 152) may be in contact with the first pin (122, 132). The second-1 layer (140) may include a second-1 core (141). At least a portion of the second-1 core (141) may be in contact with the first-1 core (121). The second-1 layer (140) may include a second-1 pin (142). At least a portion of the second-1 pin (142) may be in contact with the first-1 pin (122).

[0097] The second-2 layer (150) may include a second-2 core (151). At least a portion of the second-2 core (151) may be in contact with the first-2 core (131). The second-2 layer (150) may include a second-2 pin (152). At least a portion of the second-2 pin (152) may be in contact with the first-2 pin (132).

[0098] The center core (111) may be positioned between the second-1 core (141) and the second-2 core (151). The center pin (112) may be positioned between the second-1 pin (142) and the second-2 pin (152). The second-1 core (141) and the second-2 core (151) may be positioned in opposite directions relative to the center core (111). The second-1 pin (142) and the second-2 pin (152) may be positioned in opposite directions relative to the center pin (112).

[0099] The core (121) can be placed between the center core (111) and the second-1 core (141). The first-1 pin (122) can be placed between the center pin (112) and the second-1 pin (142).

[0100] The core (131) can be placed between the center core (111) and the second-second core (151). The first-second pin (132) can be placed between the center pin (112) and the second-second pin (152).

[0101] The first cover layer (160) may include a first cover core (161). At least a portion of the first cover core (161) may be in contact with the second-1 core (141). The first cover layer (160) may include a first cover pin (162). At least a portion of the first cover pin (162) may be in contact with the second-1 pin (142).

[0102] The cover layer (170) may include a second cover core (171). At least a portion of the second cover core (171) may be in contact with the second-2 core (151). The second cover layer (170) may include a second cover pin (172). At least a portion of the second cover pin (172) may be in contact with the second-2 pin (152).

[0103] The center core (111) may be positioned between the first cover core (161) and the second cover core (171). The center pin (112) may be positioned between the first cover pin (162) and the second cover pin (172). The first cover core (161) and the second cover core (171) may be positioned in opposite directions relative to the center core (111). The first cover pin (162) and the second cover pin (172) may be positioned in opposite directions relative to the center pin (112).

[0104] The core (141) may be placed between the first-1 core (121) and the first cover core (161). The second-1 pin (142) may be placed between the first-1 pin (122) and the first cover pin (162).

[0105] The core (151) may be positioned between the first-second core (131) and the second cover core (171). The second-second pin (152) may be positioned between the first-second pin (132) and the second cover pin (172).

[0106] FIG. 3 is a cross-sectional view of a radiation cell (1) according to an embodiment of the present disclosure, and is a cross-sectional view along the AA' reference line shown in FIG. 1. FIG. 4 is a cross-sectional view of a radiation cell (1) according to an embodiment of the present disclosure, and is a cross-sectional view along the BB' reference line shown in FIG. 1.

[0107] The core layer (110) may include a radiation source (113). The radiation source (113) may have a plate shape. The radiation source (113) may be placed at a position corresponding to the core (101). The radiation source (113) may include a radioactive isotope. The radioactive isotope is not particularly limited as long as it is a material that decays and emits radiation. The radiation (120R) may be alpha rays, beta rays, or gamma rays. For example, the radioactive isotope may be tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 It may include one or more selected from the group consisting of W).

[0108] The layer (120) may include a first-1 core semiconductor (123). The first-1 core semiconductor (123) may have a plate shape. The first-1 core semiconductor (123) may be placed at a position corresponding to the core (101). The first-1 core semiconductor (123) may be a P-type semiconductor. At least a portion of the first-1 core semiconductor (123) may be in contact with a radiation source (113).

[0109] The layer (130) may include a first-second core semiconductor (133). The first-second core semiconductor (133) may have a plate shape. The first-second core semiconductor (133) may be placed at a position corresponding to the core (101). The first-second core semiconductor (133) may be a P-type semiconductor. At least a portion of the first-second core semiconductor (133) may be in contact with a radiation source (113).

[0110] The layer (140) may include a second-1 core semiconductor (143). The second-1 core semiconductor (143) may have a plate shape. The second-1 core semiconductor (143) may be placed at a position corresponding to the core (101). The second-1 core semiconductor (143) may be an N-type semiconductor. At least a portion of the second-1 core semiconductor (143) may be in contact with the first-1 core semiconductor (123).

[0111] The layer (150) may include a second-2 core semiconductor (153). The second-2 core semiconductor (153) may have a plate shape. The second-2 core semiconductor (153) may be placed at a position corresponding to the core (101). The second-2 core semiconductor (153) may be an N-type semiconductor. At least a portion of the second-2 core semiconductor (153) may be in contact with the first-2 core semiconductor (133).

[0112] Each of the core semiconductor (123) and the first-second core semiconductor (133) may be referred to as the “first semiconductor.” The first semiconductor may be a P-type semiconductor. Each of the second-first core semiconductor (143) and the second-second core semiconductor (153) may be referred to as the “second semiconductor.” The second semiconductor may be an N-type semiconductor.

[0113] The first cover layer (160) may include a first cover electrode (163). The first cover electrode (163) may have a plate shape. The first cover electrode (163) may be positioned at a location corresponding to the core (101). The first cover electrode (163) may be electrically connected to the second-1 core semiconductor (143). At least a portion of the first cover electrode (163) may be in contact with the second-1 core semiconductor (143).

[0114] The cover layer (170) may include a second cover electrode (173). The second cover electrode (173) may have a plate shape. The second cover electrode (173) may be positioned at a location corresponding to the core (101). The second cover electrode (173) may be electrically connected to the second-2 core semiconductor (153). At least a portion of the second cover electrode (173) may be in contact with the second-2 core semiconductor (153).

[0115] The first cover electrode (163) and the second cover electrode (173) may each be referred to as a “cover electrode.” The cover electrodes (163, 173) may include a conductive material. In this specification, the conductive material has an electrical conductivity of 10 6It may be greater than S / m. For example, the conductive material may include at least one of a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, and a conductive metal oxynitride. For example, conductive materials include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride (TaCN), tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), It may include one or more selected from the group consisting of molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), and vanadium (V), but is not limited thereto. Conductive metal oxides and conductive metal oxynitrides may include oxidized forms of the materials described above, but are not limited thereto.

[0116] The core layer (110) may include a first core pin semiconductor (114). The first core pin semiconductor (114) may extend in a second direction from a radiation source (113). The first core pin semiconductor (114) may be positioned at a location corresponding to a pin (102). The first core pin semiconductor (114) may be a P-type semiconductor.

[0117] The core layer (110) may include a second core pin semiconductor (115). The second core pin semiconductor (115) may extend in a second direction from the first core pin semiconductor (114). The second core pin semiconductor (115) may be positioned at a location corresponding to the pin (102). The second core pin semiconductor (115) may be an N-type semiconductor.

[0118] The core layer (110) may include a second core pin electrode (116). The second core pin electrode (116) may extend in a second direction from the second core pin semiconductor (115). The second core pin electrode (116) may be positioned at a location corresponding to the pin (102). The second core pin electrode (116) may be electrically connected to the second core pin semiconductor (115). The second core pin electrode (116) may include a conductive material.

[0119] The layer (120) may include a first-1 pin semiconductor (124). The first-1 pin semiconductor (124) may extend in a second direction from the first-1 core semiconductor (123). The first-1 pin semiconductor (124) may be positioned at a location corresponding to the pin (102). The first-1 pin semiconductor (124) may be an N-type semiconductor. At least a portion of the first-1 pin semiconductor (124) may be in contact with the first core pin semiconductor (114). The first-1 pin semiconductor (124) may be stacked with the first core pin semiconductor (114) in a first direction. The first-1 pin semiconductor (124) may form a PN junction with the first core pin semiconductor (114). The first-1 pin semiconductor (124) may be referred to as the “first pin semiconductor.”

[0120] The layer (120) may include a first-1 pin electrode (125). The first-1 pin electrode (125) may extend in a second direction from the first-1 pin semiconductor (124). The first-1 pin electrode (125) may be positioned at a location corresponding to the pin (102). The first-1 pin electrode (125) may be electrically connected to the first-1 pin semiconductor (124). At least a portion of the first-1 pin electrode (125) may be in contact with the second core pin semiconductor (115). The first-1 pin electrode (125) may be stacked in a first direction with the second core pin semiconductor (115). The first-1 pin electrode (125) may be electrically connected to the second core pin semiconductor (115). The first-1 pin electrode (125) may be positioned offset from the first core pin semiconductor (114) in a first direction. The first-1 pin electrode (125) may include a conductive material.

[0121] The layer (120) may include a first-1 heat dissipation fin (126). The first-1 heat dissipation fin (126) may extend in a second direction from the first-1 fin electrode (125). The first-1 heat dissipation fin (126) may be positioned at a location corresponding to the fin (102). The first-1 heat dissipation fin (126) may include a heat dissipation material with high thermal conductivity. At least a portion of the first-1 heat dissipation fin (126) may be in contact with the second core fin semiconductor (115). The first-1 heat dissipation fin (126) may be stacked in a first direction with the second core fin semiconductor (115). The first-1 heat dissipation fin (126) may be in contact with the second core fin electrode (116). The first-1 heat dissipation fin (126) may be stacked in a first direction with the second core fin electrode (116).

[0122] The layer (130) may include a first-second pin semiconductor (134). The first-second pin semiconductor (134) may extend in a second direction from the first-second core semiconductor (133). The first-second pin semiconductor (134) may be positioned at a location corresponding to the pin (102). The first-second pin semiconductor (134) may be an N-type semiconductor. At least a portion of the first-second pin semiconductor (134) may be in contact with the first core pin semiconductor (114). The first-second pin semiconductor (134) may be stacked with the first core pin semiconductor (114) in a first direction (+Z). The first-second pin semiconductor (134) may form a PN junction with the first core pin semiconductor (114). The first-second pin semiconductor (134) may be referred to as the “first pin semiconductor.”

[0123] The layer (130) may include a first-second pin electrode (135). The first-second pin electrode (135) may extend in a second direction from the first-second pin semiconductor (134). The first-second pin electrode (135) may be positioned at a location corresponding to the pin (102). The first-second pin electrode (135) may be electrically connected to the first-second pin semiconductor (134). At least a portion of the first-second pin electrode (135) may be in contact with the second core pin semiconductor (115). The first-second pin electrode (135) may be stacked with the second core pin semiconductor (115) in a first direction. The first-second pin electrode (135) may be electrically connected to the second core pin semiconductor (115). The first-second pin electrode (135) may be positioned offset from the first core pin semiconductor (114) in a first direction (+Z). The first and second pin electrodes (135) may include a conductive material.

[0124] The layer (130) may include a first-second heat dissipation fin (136). The first-second heat dissipation fin (136) may extend in a second direction from the first-second fin electrode (135). The first-second heat dissipation fin (136) may be positioned at a location corresponding to the fin (102). The first-second heat dissipation fin (136) may include a heat dissipation material with high thermal conductivity. At least a portion of the first-second heat dissipation fin (136) may be in contact with the second core fin semiconductor (115). The first-second heat dissipation fin (136) may be stacked in a first direction with the second core fin semiconductor (115). The first-second heat dissipation fin (136) may be in contact with the second core fin electrode (116). The first-second heat dissipation fin (136) may be stacked in a first direction with the second core fin electrode (116).

[0125] The layer (140) may include a second-1 heat dissipation fin (144). The second-1 heat dissipation fin (144) may extend in a second direction from the second-1 core semiconductor (143). The second-1 heat dissipation fin (144) may be positioned at a location corresponding to the fin (102). The second-1 heat dissipation fin (144) may include a heat dissipation material with high thermal conductivity. At least a portion of the second-1 heat dissipation fin (144) may be in contact with the first-1 fin semiconductor (124), the first-1 fin electrode (125), and the first-1 heat dissipation fin (126). The second-1 heat dissipation fin (144) may be stacked in a first direction with the first-1 fin semiconductor (124), the first-1 fin electrode (125), and the first-1 heat dissipation fin (126).

[0126] The layer (150) may include a second-2 heat dissipation fin (154). The second-2 heat dissipation fin (154) may extend in a second direction from the second-2 core semiconductor (153). The second-2 heat dissipation fin (154) may be positioned at a location corresponding to the fin (102). The second-2 heat dissipation fin (154) may include a heat dissipation material with high thermal conductivity. At least a portion of the second-2 heat dissipation fin (154) may be in contact with the first-2 fin semiconductor (134), the first-2 fin electrode (135), and the first-2 heat dissipation fin (136). The second-2 heat dissipation fin (154) may be stacked in a first direction with the first-2 fin semiconductor (134), the first-2 fin electrode (135), and the first-2 heat dissipation fin (136).

[0127] The first cover layer (160) may include a first cover pin (164). The first cover pin (164) may extend in a second direction from the first cover electrode (163). The first cover pin (164) may be positioned at a location corresponding to the pin (102). The first cover pin (164) may include a heat dissipation material with high thermal conductivity. At least a portion of the first cover pin (164) may be in contact with the second-1 heat dissipation pin (144). The first cover pin (164) may be laminated with the second-1 heat dissipation pin (144) in a first direction. The first cover electrode (163) may include a conductive material.

[0128] The cover layer (170) may include a second cover pin (174). The second cover pin (174) may extend in a second direction from the second cover electrode (173). The second cover pin (174) may be positioned at a location corresponding to the pin (102). The second cover pin (174) may include a heat dissipation material with high thermal conductivity. At least a portion of the second cover pin (174) may be in contact with the second-2 heat dissipation fin (154). The second cover pin (174) may be laminated with the second-2 heat dissipation fin (154) in a first direction. The second cover electrode (173) may include a conductive material.

[0129] The core layer (110) may include a core shielding layer (117). The core shielding layer (117) may include an electromagnetic interface (EMI) shielding material. The core shielding layer (117) may be positioned in a second direction of the radiation source (113).

[0130] The layer (120) may include a first-1 shielding layer (127). The first-1 shielding layer (127) may include an EMI shielding material. The first-1 shielding layer (127) may be disposed in a second direction of the first-1 core semiconductor (123). The first-1 shielding layer (127) may be laminated with the core shielding film (117) in a first direction. The first-1 shielding layer (127) may be integral with the core shielding layer (117).

[0131] The layer (130) may include a first-second shielding layer (137). The first-second shielding layer (137) may include an EMI shielding material. The first-second shielding layer (137) may be disposed in a second direction of the first-second core semiconductor (133). The first-second shielding layer (137) may be laminated with the core shielding film (117) in a first direction. The first-second shielding layer (137) may be integral with the core shielding layer (117).

[0132] The second-1 layer (140) may include a second-1 shielding layer (147). The second-1 shielding layer (147) may include an EMI shielding material. The second-1 shielding layer (147) may be placed in a second direction of the second-1 core semiconductor (143). The second-1 shielding layer (147) may be laminated with the first-1 shielding film (127) in a first direction. The second-1 shielding layer (147) may be integral with the first-1 shielding layer (127).

[0133] The layer (150) may include a second-2 shielding layer (157). The second-2 shielding layer (157) may include an EMI shielding material. The second-2 shielding layer (157) may be placed in a second direction of the second-2 core semiconductor (153). The second-2 shielding layer (157) may be laminated with the first-2 shielding film (137) in a first direction. The second-2 shielding layer (157) may be integral with the first-2 shielding layer (137).

[0134] The radiation cell (1) may include a shielding layer (117, 127, 137, 147, 157). The shielding layer (117, 127, 137, 147, 157) may include a core shielding layer (117), a first-1 shielding layer (127), a first-2 shielding layer (137), a second-1 shielding layer (147), and a second-2 shielding layer (157). The shielding layer (117, 127, 137, 147, 157) may be a core shielding layer (117), a first-1 shielding layer (127), a first-2 shielding layer (137), a second-1 shielding layer (147), and a second-2 shielding layer (157) formed integrally.

[0135] FIG. 5 is a perspective view of a part of a radiation cell (1) according to an embodiment of the present disclosure, and is a drawing of a core layer (110).

[0136] The core layer (110) may include a central core (111), a central pin (112), a radiation source (113), a first core pin semiconductor (114), a second core pin semiconductor (115), a second core pin electrode (116), and a core shielding layer (117). The description of the components described above may be applied in the same way as the description of the components described with reference to FIG. 3 and FIG. 4, unless there is a contradiction.

[0137] The core layer (110) may include a core electrode (118). The core electrode (118) may be positioned in a third direction of the radiation source (113). The core electrode (118) may extend in a second direction. The core electrode (118) may be positioned between core shielding layers (117) positioned on both sides. The core electrode (118) may be stacked in a first direction with the first-1 core semiconductor (the first-1 core semiconductor (123) of FIG. 3) of the first-1 layer (120) and the first-2 core semiconductor (the first-2 core semiconductor (133) of FIG. 3) of the first-2 layer (130). The core electrode (118) may be positioned between the first-1 core semiconductor (123) and the first-2 core semiconductor (133). The core electrode (118) may be electrically connected to the first-1 core semiconductor (123) and the first-2 core semiconductor (133). The core electrode (118) may be electrically connected to the first and second cover electrodes (the first and second cover electrodes (163, 173) of FIG. 3). The core electrode (118) may include a conductive material.

[0138] The core layer (110) may include a first core pin electrode (119). The first core pin electrode (119) may be disposed inside the core shielding layer (117). The first core pin electrode (119) may be electrically connected to a first core pin semiconductor (114). The first core pin electrode (119) may be electrically connected to a second core pin electrode (116). The first core pin electrode (119) may include a conductive material.

[0139] The first core pin semiconductor (114) may include a first core pin portion (1141) located outside the core shielding layer (117) and a second core pin portion (1142) located inside the core shielding layer (117). At least a portion of the first core pin electrode (119) may be in contact with the second core pin portion (1142) inside the core shielding layer (117) and may be electrically connected.

[0140] The core layer (110) may include a core insulating layer (1121). The core insulating layer (1121) may extend in a second direction from the central core (111). The core insulating layer (1121) may cover one side of the first core pin semiconductor (114), the second core pin semiconductor (115), and the second core pin electrode (116). The core insulating layer (1121) may include an insulating material. In this specification, the insulating material has an electrical conductivity of 10 -6It may be less than or equal to S / m. In this specification, electrical conductivity is not specifically limited but may be measured, for example, according to ASTM E 1004. For example, the insulating material may comprise one or more selected from the group consisting of silicon oxide, silicon-germanium oxide, germanium oxide, silicon oxynitride, silicon nitride, high dielectric constant material having a dielectric constant greater than that of silicon oxide, or low dielectric constant material having a dielectric constant lower than that of silicon oxide. High dielectric constant materials may include, for example, one or more from the group consisting of boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate, but are not limited thereto.Low-k materials include, for example, Fluorinated TetraEthylOrthoSilicate (FTEOS), Hydrogen SilsesQuioxane (HSQ), Bis-benzoCycloButene (BCB), TetraMethylOrthoSilicate (TMOS), OctaMethyleyCloTetraSiloxane (OMCTS), HexaMethylDiSiloxane (HMDS), and TriMethylSiloxane (HMDS). Borate (TMSB), DiAcetoxyDitertiaryButoSiloxane (DADBS), TriMethylSilil Phosphate (TMSP), PolyTetraFluoroEthylene (PTFE), TOSZ (Tonen SilaZen), FSG (Fluoride Silicate Glass), polyimide nanofoams such as polypropylene oxide, CDO (Carbon Doped Oxide), OSG (Organo) Silicate Glass), SiLK, Amorphous Fluorinated Carbon, silica aerogels, silica xerogels and It may include one or more materials from the group consisting of mesoporous silica, but is not limited thereto.

[0141] FIG. 6 is a perspective view of a part of a radiation cell (1) according to an embodiment of the present disclosure, and is a drawing of the first-1 layer (120). The description of the first-1 layer (120) described with reference to FIG. 6 may be applied in the same way to the first-2 layer (130). That is, the first-1 layer (120) and the first-2 layer (130) may have the same structure and shape.

[0142] The layer (120) may include a first-1 core (121), a first-1 fin (122), a first-1 core semiconductor (123), a first-1 fin semiconductor (124), a first-1 fin electrode (125), a first-1 heat dissipation fin (126), and a first-1 shielding layer (127). The description of the above-described components may be applied in the same way as the description of the components described with reference to FIG. 3 and FIG. 4.

[0143] The pin semiconductor (124) may include a first-1 pin portion (1241) located outside the first-1 shielding layer (127) and a first-2 pin portion (1242) located inside the first-1 shielding layer (127).

[0144] The layer (120) may include a first-1 insulating layer (1221). The first-1 insulating layer (1221) may extend in a second direction from the first-1 core (121). The first-1 insulating layer (1221) may cover one side of the first-1 pin semiconductor (124), the first-1 pin electrode (125), and the first-1 heat dissipation fin (126). The first-1 insulating layer (1221) may include an insulating material.

[0145] FIG. 7 is a perspective view of a part of a radiation cell (1) according to an embodiment of the present disclosure, and is a drawing of the second-1 layer (140). The description of the second-1 layer (140) described with reference to FIG. 7 can be applied in the same way to the second-2 layer (150). That is, the second-1 layer (140) and the second-2 layer (150) may have the same structure and shape.

[0146] The second-1 layer (140) may include a second-1 core (141), a second-1 fin (142), a second-1 core semiconductor (143), a second-1 heat dissipation fin (144), and a second-1 shielding layer (147). The description of the components described above may be applied in the same way as the description of the components described with reference to FIG. 3 and FIG. 4.

[0147] The second-1 heat dissipation fin (144) may include a second-1 fin portion (1441) located outside the second-1 shielding layer (147) and a second-2 fin portion (1442) located inside the second-1 shielding layer (147).

[0148] The second-1 layer (140) may include a second-1 insulating layer (1421). The second-1 insulating layer (1421) may extend in a second direction from the second-1 core (141). The second-1 insulating layer (1421) may cover one side of the second-1 heat dissipation fin (144). The second-1 insulating layer (1421) may include an insulating material.

[0149] FIG. 8 is a perspective view of a part of a radiation cell (1) according to an embodiment of the present disclosure, and is a drawing of a first cover layer (160). The description of the first cover layer (160) described with reference to FIG. 8 can be applied in the same way to the second cover layer (170). That is, the first cover layer (160) and the second cover layer (170) may have the same structure and shape.

[0150] The first cover layer (160) may include a first cover core (161), a first cover pin (162), a first cover electrode (163), and a first cover pin (164). The description of the components described above may be applied in the same way as the description of the components described with reference to FIG. 3 and FIG. 4.

[0151] FIG. 9 is a part of an exploded view of a radiation cell (1) according to an embodiment of the present disclosure, showing a core layer (110), a first-second layer (130), a second-second layer (150), and a second cover layer (170).

[0152] The radiation cell (1) may include a first wiring (103). The first wiring (103) may connect a core electrode (118) and a second cover electrode (173). The core electrode (118) may provide a cathode (+) electrode, and the second cover electrode (173) may provide an anode (-) electrode. The first wiring (103) may extend inside a shielding layer (117, 137, 157) and be connected to the second cover electrode (173).

[0153] Radiation (e.g., beta rays) generated from a radiation source (113) can be projected onto the junction surface of the first-2 core semiconductor (133) and the second-2 core semiconductor (153) to induce a flow of holes and electrons. A current can be formed through the first wiring (103) by the flow of holes and electrons from the junction surface of the first-2 core semiconductor (133) and the second-2 core semiconductor (153).

[0154] The description of the electrical flow described with reference to FIG. 9 can be equally applied to the description of the electrical flow through the core layer (110), the first-1 layer (120), the second-1 layer (140), and the first cover layer (160). For example, beta rays generated from a radiation source (113) can be projected onto the junction surface of the first-1 core semiconductor (123) and the second-1 core semiconductor (143) to induce a flow of holes and electrons. A current can be formed through the first wiring (103) which is extended in the first direction (+Z) by the flow of holes and electrons from the junction surface of the first-1 core semiconductor (123) and the second-1 core semiconductor (143). At this time, the core electrode (118) can be connected to the first cover electrode (163) through the first wiring (103).

[0155] FIG. 10 is a perspective view of a part of a beta battery according to an embodiment of the present disclosure, and is a drawing of a core layer (110).

[0156] The radiation cell (1) may include a second wiring (104). The second wiring (104) may connect the first core pin electrode (119) and the second core pin electrode (116). The first core pin electrode (119) may provide a cathode ((+) electrode), and the second core pin electrode (116) may provide an anode ((-) electrode). The second wiring (104) may extend inside the core insulating layer (1121) to connect the first core pin electrode (119) and the second core pin electrode (116).

[0157] Radiation (e.g., beta rays) generated from a radiation source (113) can be projected onto the junction surface of the first core pin semiconductor (114) and the second core pin semiconductor (115) to induce a flow of holes and electrons. A current can be formed through the second wiring (104) by the flow of holes and electrons from the junction surface of the first core pin semiconductor (114) and the second core pin semiconductor (115).

[0158] FIG. 11 is a partial exploded view of a beta battery according to an embodiment of the present disclosure, showing the core layer (110) and the first-second layer (130).

[0159] The radiation cell (1) may include a third wiring (105). The third wiring (105) may connect the first core pin electrode (119) and the first-second pin electrode (135). The first core pin electrode (119) may provide a cathode ((+) electrode), and the first-second pin electrode (135) may provide an anode ((-) electrode). The third wiring (105) may extend within the core insulating layer (1121) and the first-second insulating layer (1321) to connect the first core pin electrode (119) and the first-second pin electrode (135).

[0160] Radiation (e.g., beta rays) generated from a radiation source (113) can be projected onto the junction surface of the first core pin semiconductor (114) and the first-second pin semiconductor (134) to induce a flow of holes and electrons. A current can be formed through the third wiring (105) by the flow of holes and electrons from the junction surface of the first core pin semiconductor (114) and the first-second pin semiconductor (134).

[0161] The description of the electrical flow described with reference to FIG. 11 can be applied in the same way to the description of the electrical flow through the core layer (110) and the first-1 layer (120). For example, beta rays generated from a radiation source (113) can be projected onto the junction surface of the first core pin semiconductor (114) and the first-1 pin semiconductor (124) to induce a flow of holes and electrons. A current can be formed through the third wiring (105) which is extended in the first direction (+Z) by the flow of holes and electrons from the junction surface of the first core pin semiconductor (114) and the first-1 pin semiconductor (124). At this time, the first core pin electrode (119) can be connected to the first-1 pin electrode (125) through the third wiring (105).

[0162] Meanwhile, although terms indicating direction such as up and down have been used in this specification, these terms are used merely for convenience of explanation, and it is obvious to a person skilled in the art that they may vary depending on the location of the object or the position of the observer.

[0163] Although various embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those with average knowledge in the art that various modifications and variations are possible within the scope of the technical concept of the present invention as described in the claims. Furthermore, the above-described embodiments may be implemented by deleting some components, and each embodiment may be implemented in combination with one another.

Claims

1. A core layer including a central core containing a radiation source and a central pin; A first layer comprising a first semiconductor that is a P-type semiconductor, a first core stacked in a first direction on the central core, and a first pin extending and protruding from the first core and stacked on the central pin; and A radiation cell comprising a second layer including a second semiconductor that is an N-type semiconductor, a second core stacked in the first direction on the first core, and a second pin extending and protruding from the second core and stacked on the first pin.

2. In Paragraph 1, The first layer above includes a first-1 layer and a first-2 layer spaced apart from the first-1 layer, and The above core layer is positioned between the above 1-1 layer and the above 1-2 layer, and The above second layer includes a second-1 layer and a second-2 layer spaced apart from the second-1 layer, and The above core layer is a radiation cell disposed between the above 2-1 layer and the above 2-2 layer.

3. In Paragraph 1, The above-mentioned first semiconductor is, It includes a first-1 core semiconductor in contact with the core layer and a first-2 core semiconductor in contact with the core layer in a direction opposite to that of the first-1 core semiconductor with respect to the core layer. The above second semiconductor is, A radiation cell comprising a second-1 core semiconductor in contact with the first-1 core semiconductor and a second-2 core semiconductor in contact with the first-2 core semiconductor in a direction opposite to the second-1 core semiconductor based on the core layer.

4. In Paragraph 1, The above core layer is, A first core pin semiconductor that extends from the radiation source in a second direction intersecting the first direction and forms a part of the center pin, and is a P-type semiconductor; and A radiation cell comprising a second core pin semiconductor that extends in the second direction from the first core pin semiconductor to form another part of the center pin and is an N-type semiconductor.

5. In Paragraph 1, The above first layer is, A radiation cell comprising a first pin semiconductor that extends from the first semiconductor in a second direction intersecting the first direction to form a part of the first pin and is an N-type semiconductor.

6. In Paragraph 1, The above core layer is, A radiation cell comprising a core electrode that forms a part of the central core and is electrically connected to the first semiconductor of the first layer.

7. In Paragraph 1, A radiation cell comprising a shielding layer surrounding the radiation source and extending in the first direction.

8. In Paragraph 1, A radiation cell further comprising an insulating layer surrounding at least a portion of the central pin.

9. In Paragraph 1, A radiation cell further comprising a cover layer including a cover electrode that is laminated in the first direction on the second layer and is electrically connected to the second semiconductor.

10. In Paragraph 9, The cover electrode and the core electrode spaced apart in the first direction; and A radiation cell further comprising a first wiring extending in the first direction and connecting the core electrode and the cover electrode.

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