Radiation battery

Abstract

A radiation battery according to an embodiment of the present disclosure comprises: a substrate; a wire layer spaced apart from the substrate with respect to a first direction perpendicular to the surface of the substrate; a plurality of layers disposed between the substrate and the wire layer and stacked in the first direction; and vias extending in the first direction and connecting at least some of the plurality of layers to the wire layer, wherein each of the plurality of layers may include a radiation source, a first semiconductor comprising one of P-type and N-type impurities, and a second semiconductor comprising one of P-type and N-type impurities, the first and second semiconductors having different types.

Description

radiation battery

[0001] This application claims the benefit of priority based on Korean Patent Application No. 2024-0184158 filed on December 11, 2024, and all contents disclosed in the document of said Korean Patent Application are incorporated herein as part of this specification.

[0002] A radioisotope is an element that decays into a stable isotope while emitting radiation. Known modes of radioisotope decay include alpha decay, beta decay, and gamma decay. Depending on the type of radioisotope, it emits alpha, beta, or gamma rays as it decays. Meanwhile, the time it takes for a radioisotope to decay and reduce its radioactivity to half of its initial level is called the half-life. The type of radiation emitted during decay and the half-life are determined by the type of radioisotope.

[0003] Generally, a betavoltaic cell is a battery that utilizes beta rays, which are radiation emitted from radioactive isotopes. Beta rays are absorbed by a PN junction semiconductor to form electron-hole pairs from the depletion layer, and the formed electrons and holes can be used as an electrical power source. In other words, a betavoltaic cell is a battery designed to convert the nuclear fission energy of a radioactive isotope into electrical energy for use as an electrical power source.

[0004] The problem to be solved in the embodiments of the present disclosure may be to provide a radiation cell with improved power conversion efficiency.

[0005] The problem to be solved in the embodiments of the present disclosure may be to provide a radiation cell with improved durability.

[0006] The problem to be solved in the embodiments of the present disclosure may be to provide a radiation battery with improved heat dissipation performance.

[0007] The problems to be solved in the embodiments of the present disclosure are not limited to those described above.

[0008] A radiation cell according to an embodiment of the present disclosure may include a substrate.

[0009] A radiation cell according to an embodiment of the present disclosure may include a wiring layer spaced apart in a first direction of the substrate.

[0010] A radiation cell according to an embodiment of the present disclosure may include a plurality of layers stacked together in the first direction between the substrate and the wiring layer, each comprising a radiation source, a first semiconductor which is a semiconductor of either type P or type N, and a second semiconductor which is a semiconductor of either type P or type N.

[0011] A radiation cell according to an embodiment of the present disclosure may include vias that extend in the first direction and connect each of the plurality of layers and the wiring layer.

[0012] According to an embodiment of the present disclosure, the plurality of layers may include a first layer extended by a first length in a second direction perpendicular to the first direction.

[0013] According to an embodiment of the present disclosure, the plurality of layers may include a second layer that is laminated with the first layer and extends in the second direction by a second length greater than the first length.

[0014] Each of the plurality of layers according to an embodiment of the present disclosure may include an edge spaced apart from the wiring layer in the first direction.

[0015] Each of the plurality of layers according to an embodiment of the present disclosure may include a pad that protrudes from the edge and is connected to the via.

[0016] The plurality of layers according to an embodiment of the present disclosure may include a first layer.

[0017] According to an embodiment of the present disclosure, the plurality of layers may include a second layer located further away from the wiring layer than the first layer.

[0018] The via according to an embodiment of the present disclosure may include a first via having a first height and connecting the first layer and the wiring layer.

[0019] The via according to an embodiment of the present disclosure may include a second via connecting the second layer and the wiring layer and having a second height greater than the first height.

[0020] According to an embodiment of the present disclosure, a plurality of vias may be arranged spaced apart from each other in a second direction perpendicular to the first direction and a third direction perpendicular to the first and second directions.

[0021] Each of the plurality of layers according to an embodiment of the present disclosure may include a plurality of cells, each comprising the radiation source, the first semiconductor, and the second semiconductor.

[0022] Each of the plurality of layers according to an embodiment of the present disclosure may include a cell layer comprising the radiation source, the first semiconductor, and the second semiconductor.

[0023] Each of the plurality of layers according to an embodiment of the present disclosure may include an insulating layer that is laminated with the cell layer and includes an insulating material.

[0024] A radiation cell according to an embodiment of the present disclosure may include the first semiconductor and a first electrode stacked in the first direction.

[0025] A radiation cell according to an embodiment of the present disclosure may include the second semiconductor and a second electrode stacked in the first direction.

[0026] The first electrode according to an embodiment of the present disclosure may include a first-1 electrode portion that extends in a second direction perpendicular to the first direction and is electrically connected to the second electrode adjacent in a third direction perpendicular to the first and second directions.

[0027] The first electrode according to an embodiment of the present disclosure may include a first-second electrode portion that extends in the third direction and is electrically connected to the second electrode adjacent in the second direction.

[0028] Each of the plurality of layers according to an embodiment of the present disclosure may include an electrode layer on which the first electrode and the second electrode are disposed.

[0029] Each of the plurality of layers according to an embodiment of the present disclosure may include the electrode layer and a base stacked in the first direction.

[0030] Each of the plurality of layers according to an embodiment of the present disclosure may include wiring that is disposed inside the base and connects the first electrode and the second electrode.

[0031] A radiation cell according to an embodiment of the present disclosure may include a wiring layer spaced apart with respect to a first direction perpendicular to the surface of the substrate.

[0032] A radiation cell according to an embodiment of the present disclosure may include a plurality of layers disposed between the substrate and the wiring layer and each stacked in the first direction.

[0033] A radiation cell according to an embodiment of the present disclosure may include vias that extend in the first direction and connect at least a portion of the plurality of layers to the wiring layer.

[0034] Each of the plurality of layers according to an embodiment of the present disclosure may include a radiation source, a first semiconductor which is one of a P-type and an N-type semiconductor, and a second semiconductor which is a semiconductor of a different type from the first semiconductor.

[0035] According to an embodiment of the present disclosure, the plurality of layers may include a first layer that is closest to the wiring layer and extends by a first length in a second direction parallel to the surface of the substrate.

[0036] According to an embodiment of the present disclosure, the plurality of layers may include a second layer that is stacked with the first layer in the first direction and extended in the second direction by a second length longer than the first length.

[0037] Each of the plurality of layers according to an embodiment of the present disclosure may include an edge spaced apart from the wiring layer with respect to the first direction.

[0038] Each of the plurality of layers according to an embodiment of the present disclosure may include a pad disposed at the edge and connected to the via.

[0039] The via according to an embodiment of the present disclosure may include a first via having a first height and connecting the first layer and the wiring layer.

[0040] The via according to an embodiment of the present disclosure may include a second via connecting the second layer and the wiring layer and having a second height longer than the first height.

[0041] According to an embodiment of the present disclosure, a plurality of vias are arranged, and the plurality of vias may be arranged to be spaced apart from each other based on a second direction horizontal to the surface of the substrate and a third direction horizontal to the surface of the substrate and intersecting the second direction.

[0042] Each of the plurality of layers according to an embodiment of the present disclosure may include a plurality of cells, each comprising the radiation source, the first semiconductor, and the second semiconductor.

[0043] Each of the plurality of layers according to an embodiment of the present disclosure may include a cell layer comprising the radiation source, the first semiconductor, and the second semiconductor.

[0044] Each of the plurality of layers according to an embodiment of the present disclosure may include an insulating layer disposed on the cell layer and comprising an insulating material.

[0045] A radiation cell according to an embodiment of the present disclosure may include a first electrode arranged to overlap with at least a portion of the first semiconductor when viewed from the first direction.

[0046] A radiation cell according to an embodiment of the present disclosure may include a second electrode arranged to overlap with at least a portion of the second semiconductor when viewed from the first direction.

[0047] The first electrode according to an embodiment of the present disclosure may include a first-1 electrode portion that extends in a second direction parallel to the surface of the substrate and is electrically connected to the second electrode adjacent in a third direction that is horizontal to the surface of the substrate and intersects the second direction.

[0048] The first electrode according to an embodiment of the present disclosure may include a first-second electrode portion that extends in the third direction and is electrically connected to the second electrode adjacent in the second direction.

[0049] Each of the plurality of layers according to an embodiment of the present disclosure may include a base comprising an insulating material.

[0050] Each of the plurality of layers according to an embodiment of the present disclosure may include an electrode layer that is laminated on the upper surface of the base and has at least a portion of the first electrode and at least a portion of the second electrode disposed thereon.

[0051] Each of the plurality of layers according to an embodiment of the present disclosure may include wiring connecting the first electrode and the second electrode, with at least a portion disposed inside the base.

[0052] A radiation cell according to an embodiment of the present disclosure can have its power conversion efficiency improved by stacking a plurality of layers, each comprising a plurality of cells, in a stepped structure.

[0053] A radiation cell according to an embodiment of the present disclosure can have improved durability by stacking a plurality of layers, each containing a plurality of cells, in a stepped structure.

[0054] A radiation cell according to an embodiment of the present disclosure can ensure heat dissipation performance through vias by means of a structure connected to a wiring layer through vias.

[0055] The effects according to the embodiments of the present disclosure are not limited to those described above.

[0056] The drawings shown in this disclosure are according to embodiments, and the ratios of the width, height, or height (or thickness) of each component are intended to explain this disclosure in detail and may differ from the actual. Additionally, in the coordinate system shown in the drawings, each axis (e.g., X-axis, Y-axis, and Z-axis) may have an arrow pointing in a positive direction (e.g., +X-axis direction, +Y-axis direction, and +Z-axis direction) and a direction exactly opposite to the direction pointed in by the arrow (a direction rotated 180 degrees) may be a negative direction (e.g., -X-axis direction, -Y-axis direction, and -Z-axis direction).

[0057] FIG. 1 is a perspective view of a radiation cell according to an embodiment of the present disclosure.

[0058] FIG. 2 is an exploded view of a part of a radiation cell according to an embodiment of the present disclosure.

[0059] FIG. 3 is an exploded view of a portion of a radiation cell according to an embodiment of the present disclosure.

[0060] FIG. 4 is an exploded view of a portion of a radiation cell according to an embodiment of the present disclosure.

[0061] FIG. 5 is a cross-sectional view of a portion of a radiation cell according to an embodiment of the present disclosure.

[0062] FIG. 6 is a cross-sectional view of a portion of a radiation cell according to an embodiment of the present disclosure.

[0063] Prior to the detailed description of the present invention, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings. Instead, they should be interpreted in a sense and concept consistent with the technical spirit of the present invention, based on the principle that the inventor may appropriately define the concept of the terms to best describe his invention. Accordingly, the embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of the present invention and do not represent all aspects of the technical spirit of the present invention. Therefore, it should be understood that various equivalents and modifications capable of replacing them may exist at the time of filing this application.

[0064] Identical reference numbers or symbols in each drawing attached to this specification represent parts or components that perform substantially the same function. For convenience of explanation and understanding, the same reference numbers or symbols may be used to describe different embodiments. That is, even if components having the same reference number are depicted in multiple drawings, the multiple drawings do not all represent a single embodiment.

[0065] In the following description, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "comprising" or "constituting" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0066] In addition, it should be noted in advance that expressions such as upper side, top, lower side, bottom, side, front, and rear in the following description are based on the direction depicted in the drawings, and may be expressed differently if the direction of the object changes.

[0067] Additionally, in this specification and claims, terms including ordinal numbers, such as "first," "second," etc., may be used to distinguish between components. These ordinal numbers are used to distinguish identical or similar components from one another, and the meaning of the terms should not be limited by the use of such ordinal numbers. For example, the order of use or arrangement of components combined with such ordinal numbers should not be limited by the number. If necessary, each ordinal number may be used interchangeably.

[0068] Embodiments of the present invention will be described below with reference to the attached drawings. However, the scope of the present invention is not limited to the embodiments presented. For example, a person skilled in the art who understands the scope of the present invention may propose other embodiments that fall within the scope of the concept of the present invention by adding, changing, or deleting components, and such embodiments shall also be deemed to be within the scope of the concept of the present invention. In the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0069] FIG. 1 is a perspective view of a radiation cell (1) according to one embodiment of the present disclosure.

[0070] A radiation cell (1) may include assemblies (100). Multiple assemblies (100) may be arranged. The radiation cell (1) may be a structure formed by stacking multiple assemblies (100). The radiation cell (1) may be a structure formed by stacking multiple assemblies (100) in one direction, but is not limited thereto. The radiation cell (1) may be a structure in which multiple assemblies (100) electrically connected to each other are packaged. Hereinafter, with reference to FIGS. 1 to 6, any one of the multiple assemblies (100) that are assembled together to form a radiation cell (1) will be described as an example. Multiple individual unit assemblies (100) described with reference to FIGS. 1 to 6 may be assembled together to form a radiation cell (1).

[0071] The radiation cell (1) may include a plurality of layers (110, 120, 130, 140, 150), a wiring layer (160), a substrate (170), and vias (180). The assembly (100) may include a plurality of layers (110, 120, 130, 140, 150), a wiring layer (160), a substrate (170), and vias (180).

[0072] The radiation cell (1) may include a plurality of layers (110, 120, 130, 140, 150). The plurality of layers (110, 120, 130, 140, 150) may be stacked with a step structure relative to each other.

[0073] A plurality of layers (110, 120, 130, 140, 150) may include a first layer (110), a second layer (120), a third layer (130), a fourth layer (140), and a fifth layer (150). However, the number of the plurality of layers (110, 120, 130, 140, 150) is not limited to what is described above. For example, the number of the plurality of layers may be 5 as shown in FIG. 1, 3 as shown in FIG. 2, greater than 5, or less than 3.

[0074] In this specification, the first direction may refer to the Z-axis direction. The first direction (Z-axis direction) may refer to a direction perpendicular to the surface of the substrate (170). The second direction may refer to the X-axis direction. The second direction (X-axis direction) may refer to a direction parallel to the surface of the substrate (170) and may intersect with the first direction (Z-axis direction). For example, the second direction (X-axis direction) may be perpendicular to the first direction (Z-axis direction). The third direction (Y-axis direction) may refer to a direction parallel to the surface of the substrate (170) and intersect with the second direction (X-axis direction), and may intersect with the first direction (Z-axis direction). For example, the third direction (Y-axis direction) may be perpendicular to the first direction (Z-axis direction) and the second direction (X-axis direction).

[0075] A plurality of layers (110, 120, 130, 140, 150) may each be stacked in a first direction. The first layer (110), the second layer (120), the third layer (130), the fourth layer (140), and the fifth layer (150) may be stacked sequentially along the first direction (Z). The first direction (Z) may refer to a direction extended along the Z-axis. The first direction (Z) may refer to the direction in which a plurality of layers (110, 120, 130, 140, 150) are stacked. The first direction (Z) may be named the “stacking direction.” The first direction (Z) may be either the +Z direction or the -Z direction.

[0076] Multiple layers (110, 120, 130, 140, 150) may be extended in a second direction. The length of each of the multiple layers (110, 120, 130, 140, 150) extended in the second direction may differ from one another. The length of the first layer (110) extended in the second direction may be shorter than the length of the second layer (120) extended in the second direction. The length of the second layer (120) extended in the second direction may be shorter than the length of the third layer (130) extended in the second direction. The length of the third layer (130) extended in the second direction may be shorter than the length of the fourth layer (140) extended in the second direction. The length of the fourth layer (140) extended in the second direction may be shorter than the length of the fifth layer (150) extended in the second direction. As the number of stacked layers increases among the multiple layers (110, 120, 130, 140, 150), the length extended in the second direction may gradually become shorter. That is, among the multiple layers (110, 120, 130, 140, 150), the layer at the top (based on the first direction) (e.g., the first layer (110)) may have the shortest length extended in the second direction among the multiple layers (110, 120, 130, 140, 150). Among the multiple layers (110, 120, 130, 140, 150), the layer at the bottom (based on the first direction) (e.g., the fifth layer (150)) may have the longest length extended in the second direction among the multiple layers (110, 120, 130, 140, 150).

[0077] Among the plurality of layers (110, 120, 130, 140, 150), the differences in lengths extended in the second direction between two adjacent layers among the plurality of layers (110, 120, 130, 140, 150) may be substantially the same. For example, the difference in length extended in the second direction between the first layer (110) and the second layer (120) and the difference in length extended in the second direction between the second layer (120) and the third layer (130) may be substantially the same.

[0078] Since the lengths of each of the multiple layers (110, 120, 130, 140, 150) extended in the second direction are different, the multiple layers (110, 120, 130, 140, 150) can form a stepped structure. The stepped structure may include one or more steps depending on the number of the multiple layers (110, 120, 130, 140, 150). For example, referring to FIG. 1, five multiple layers (110, 120, 130, 140, 150) can form a stepped structure having four steps.

[0079] The radiation cell (1) may include a substrate (170). A plurality of layers (110, 120, 130, 140, 150) may be disposed on the substrate (170). The substrate (170) may include silicon (Si). In another example, the substrate (170) may include a group IV-IV compound semiconductor or a group III-V compound semiconductor, and more specifically, may include a binary compound, a ternary compound, a quaternary compound, or a compound doped with a group IV element, comprising at least two of carbon (C), silicon (Si), germanium (Ge), and tin (Sn). In one example, the group III-V compound semiconductor may be one of a binary compound, a ternary compound, or a quaternary compound formed by combining, for example, at least one of aluminum (Al), gallium (Ga), and indium (In) as a group III element with one of phosphorus (P), arsenic (As), and antimony (Sb) as a group V element.

[0080] The radiation cell (1) may include a wiring layer (160). The wiring layer (160) may be spaced apart from the substrate (170) with respect to a first direction and may be arranged parallel to the substrate (170). A plurality of layers (110, 120, 130, 140, 150) may be arranged between the substrate (170) and the wiring layer (160). The wiring layer (160) may be arranged on the plurality of layers (110, 120, 130, 140, 150). The wiring layer (160) may be electrically connected to each of the plurality of layers (110, 120, 130, 140, 150). Power generated from each of the plurality of layers (110, 120, 130, 140, 150) may be transferred to the wiring layer (160).

[0081] The wiring layer (160) may include a conductive material. In this specification, the conductive material has an electrical conductivity of 10 6It may be greater than S / m. For example, the conductive material may include at least one of a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, and a conductive metal oxynitride. For example, conductive materials include titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride (TaCN), tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), It may include one or more selected from the group consisting of molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), and vanadium (V), but is not limited thereto. Conductive metal oxides and conductive metal oxynitrides may include oxidized forms of the materials described above, but are not limited thereto.

[0082] The radiation cell (1) may include a via (180). The via (180) may extend in a first direction. The via (180) may include a conductive material. The via (180) may be placed in a stepped structure formed by a plurality of layers (110, 120, 130, 140, 150) and may be connected to at least some (120, 130, 140, 150) of the plurality of layers (110, 120, 130, 140, 150). A wiring layer (160) may be connected to at least some (120, 130, 140, 150) of the plurality of layers (110, 120, 130, 140, 150). Power generated in at least some (120, 130, 140, 150) of the plurality of layers (110, 120, 130, 140, 150) can be transmitted to the wiring layer (160) with minimal electrical loss through the via (180).

[0083] The via (180) may include a material with high thermal conductivity. For example, the via (180) may include a metallic material. Heat generated in the plurality of layers (110, 120, 130, 140, 150) can be released outside the radiation cell (1) through the via (180).

[0084] Multiple vias (180) may be arranged. Multiple vias (180) may be arranged so as to be spaced apart from each other with respect to a second direction and a third direction. One or more vias (180) may be arranged on each step in a stepped structure to be connected to at least some (120, 130, 140, 150) of the multiple layers (110, 120, 130, 140, 150). Among the multiple vias (180), a via (180) formed on one step and a via (180) formed on another step may be spaced apart from each other with respect to a second direction.

[0085] The via (180) can be connected to some (120, 130, 140, 150) of the plurality of layers (110, 120, 130, 140, 150) and can be unconnected to the layer closest to the wiring layer (160) among the plurality of layers (110, 120, 130, 140, 150) (e.g., the first layer (110)).

[0086] Multiple vias (180) may be arranged on a single step. For example, at least two of the multiple vias (180) may be arranged on a step formed by the first layer (110) and the second layer (120). Multiple vias (180) arranged on a single step may be spaced apart from each other in a third direction.

[0087] FIG. 2 is an exploded view of a portion of a radiation cell (1) according to an embodiment of the present disclosure. FIG. 2 illustrates, by way of example, that the number of multiple layers (110, 120, 130) is three, but the number of multiple layers (110, 120, 130) is not limited thereto.

[0088] Referring to FIG. 2, the radiation cell (1) may include a plurality of layers (110, 120, 130), a wiring layer (160), and a substrate (170). The plurality of layers (110, 120, 130) may be disposed between the wiring layer (160) and the substrate (170). The plurality of layers (110, 120, 130) may include a first layer (110), a second layer (120), and a third layer (130). The first layer (110), the second layer (120), and the third layer (130) may be stacked in a first direction.

[0089] The first layer (110), the second layer (120), and the third layer (130) may be extended in a second direction. The lengths of the first layer (110), the second layer (120), and the third layer (130) extended in the second direction may differ from each other. For example, the first length (L1), which is the length of the first layer (110) extended in the second direction, may be shorter than the second length (L2), which is the length of the second layer (120) extended in the second direction. For example, the second length (L2) of the second layer (120) may be shorter than the third length (L3), which is the length of the third layer (130) extended in the second direction.

[0090] Because the first length (L1), the second length (L2), and the third length (L3) are sequentially different from each other, the stacked structure of the first, second, and third layers (110, 120, 130) can form a stepped structure.

[0091] A plurality of layers (110, 120, 130) may each include a cell layer (111, 121, 131) and an insulating layer (112, 122, 132) disposed on the cell layer (111, 121, 131). The cell layer (111, 121, 131) may be laminated on the upper surface of the insulating layer (112, 122, 132).

[0092] The insulating layer (112, 122, 132) may include an insulating material. In this specification, the insulating material has an electrical conductivity of 10 -6It may be less than or equal to S / m. In this specification, electrical conductivity is not specifically limited but may be measured, for example, according to ASTM E 1004. For example, the insulating material may comprise one or more selected from the group consisting of silicon oxide, silicon-germanium oxide, germanium oxide, silicon oxynitride, silicon nitride, high dielectric constant material having a dielectric constant greater than that of silicon oxide, or low dielectric constant material having a dielectric constant lower than that of silicon oxide. High dielectric constant materials may include, for example, one or more from the group consisting of boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, or lead zinc niobate, but are not limited thereto.Low-k materials include, for example, Fluorinated TetraEthylOrthoSilicate (FTEOS), Hydrogen SilsesQuioxane (HSQ), Bis-benzoCycloButene (BCB), TetraMethylOrthoSilicate (TMOS), OctaMethyleyCloTetraSiloxane (OMCTS), HexaMethylDiSiloxane (HMDS), and TriMethylSiloxane (HMDS). Borate (TMSB), DiAcetoxyDitertiaryButoSiloxane (DADBS), TriMethylSilil Phosphate (TMSP), PolyTetraFluoroEthylene (PTFE), TOSZ (Tonen SilaZen), FSG (Fluoride Silicate Glass), polyimide nanofoams such as polypropylene oxide, CDO (Carbon Doped Oxide), OSG (Organo) Silicate Glass), SiLK, Amorphous Fluorinated Carbon, silica aerogels, silica xerogels and It may include one or more materials from the group consisting of mesoporous silica, but is not limited thereto.

[0093] The insulating layer (112, 122, 132) may protrude in a second direction from the cell layer (111, 121, 131). Each insulating layer (112, 122, 132) may include an edge (1126, 1226, 1326). The edge (1126, 1226, 1326) may be exposed from the cell layer (111, 121, 131) with respect to a second direction. The edge (1126, 1226, 1326) may be spaced apart from the wiring layer (160) with respect to a first direction.

[0094] Each of the multiple layers (110, 120, 130) may include a pad (1127, 1227, 1327) disposed at an edge (1126, 1226, 1326). The pad (1127, 1227, 1327) may be disposed facing the wiring layer (160). The pad (1127, 1227, 1327) may be disposed at the edge (1126, 1226, 1326) and may be connected to a via (180).

[0095] For example, the first layer (110) may include a first cell layer (111) and a first insulating layer (112). The first cell layer (111) may be laminated on the upper surface of the first insulating layer (112). The first insulating layer (112) may protrude in a second direction from the first cell layer (111). The first insulating layer (112) may include a first edge (1126). The first edge (1126) may be exposed with respect to the second direction of the first cell layer (111). The first layer (110) may include a first pad (1127). The first pad (1127) may be placed on the first edge (1126). The first pad (1127) may be placed facing the wiring layer (160).

[0096] For example, the second layer (120) may include a second cell layer (121) and a second insulating layer (122). The second cell layer (121) may be laminated on the upper surface of the second insulating layer (122). The second insulating layer (122) may protrude in a second direction from the second cell layer (121). The second insulating layer (122) may include a second edge (1226). The second edge (1226) may be exposed with respect to the second direction of the second cell layer (121). The second layer (120) may include a second pad (1227). The second pad (1227) may be placed on the second edge (1226). The second pad (1227) may be placed facing the wiring layer (160).

[0097] For example, the third layer (130) may include a third cell layer (131) and a third insulating layer (132). The third cell layer (131) may be laminated on the upper surface of the third insulating layer (132). The third insulating layer (132) may protrude in a second direction (+X) from the third cell layer (131). The third insulating layer (132) may include a third edge (1326). The third edge (1326) may be exposed with respect to the second direction of the third cell layer (131). The third layer (130) may include a third pad (1327). The third pad (1327) may be placed on the third edge (1326). The third pad (1327) may be placed facing the wiring layer (160).

[0098] A via (180, see FIG. 1) may include a first via (181), a second via (182), and a third via (183). The first via (181) of the radiation cell (1) may be connected to a first layer (110). The second via (182) may be connected to a second layer (120). The third via (183) may be connected to a third layer (130). The first via (181) may connect the first layer (110) and the wiring layer (160). The second via (182) may connect the second layer (120) and the wiring layer (160). The third via (183) may connect the third layer (130) and the wiring layer (160).

[0099] The wiring layer (160) may include a power circuit (161). The power circuit (161) may receive a signal regarding power transmitted from each of the plurality of layers (110, 120, 130). A first via (181) may extend in a first direction from the first layer (110) and be electrically connected to the power circuit (161) of the wiring layer (160). A second via (182) may extend in a first direction from the second layer (120) and be electrically connected to the power circuit (161) of the wiring layer (160). A third via (183) may extend in a first direction from the third layer (130) and be electrically connected to the power circuit (161) of the wiring layer (160).

[0100] The height of the via (180, see FIG. 1) may gradually increase as it moves away from the layer closest to the wiring layer (160) among the plurality of layers (110, 120, 130) with respect to the second direction (e.g., the first layer (110)). The height of the via (180, see FIG. 1) may refer to the length in the first direction. For example, the first height (H1), which is the height of the first via (181), may be shorter than the second height (H2), which is the height of the second via (182). The second height (H2) may be shorter than the third height (H3), which is the height of the third via (183).

[0101] FIG. 3 is an exploded view of a portion of a radiation cell (1) according to an embodiment of the present disclosure, specifically an exploded view of the first, second, and third layers (110, 120, 130).

[0102] Each of the plurality of layers (110, 120, 130) may include a plurality of cells (111a, 121a, 131a). Specifically, each of the cell layers (111, 121, 131) may include a plurality of cells (111a, 121a, 131a). The plurality of cells (111a, 121a, 131a) may be separated from each other by virtual boundary lines (e.g., first to fourth boundary lines (D1, D2, D3, D4) of the first layer (110)) within each layer (110, 120, 130).

[0103] For example, the first layer (110) may include a first cell layer (111) comprising a plurality of first cells (111a). Within the first cell layer (111), the plurality of first cells (111a) may be separated from each other by first to fourth boundary lines (D1, D2, D3, D4). For example, the first cell layer (111) may include nine first cells (111a), but the number of first cells (111a) is not limited thereto. The plurality of first cells (111a) may be in contact with each other. For example, the nine first cells (111a) may refer to an area separated by virtual boundary lines (D1, D2, D3, D4).

[0104] For example, the second layer (120) may include a second cell layer (121) comprising a plurality of second cells (121a). Within the second cell layer (121), the plurality of second cells (121a) may be partitioned from one another in the same way that the first cell (111a) is partitioned. For example, the second cell layer (121) may include 12 second cells (121a), but the number of second cells (121a) is not limited thereto. The plurality of second cells (121a) may be in contact with each other.

[0105] For example, the third layer (130) may include a third cell layer (131) comprising a plurality of third cells (131a). Within the third cell layer (131), the plurality of third cells (131a) may be partitioned from one another in the same way that the first cells (111a) are partitioned. For example, the third cell layer (131) may include 15 third cells (131a), but the number of second cells (131a) is not limited thereto. The plurality of third cells (131a) may be in contact with each other.

[0106] The number of first cells (111a) may be smaller than the number of second cells (121a). The number of second cells (121a) may be smaller than the number of third cells (131a). At least some of the plurality of second cells (121a) may be exposed with respect to the second direction of the first cell layer (111). At least some of the plurality of third cells (131a) may be exposed with respect to the second direction of the second cell layer (121).

[0107] Each of the first, second, and third cells (111a, 121a, 131a) may have the same structure and shape. For example, the radiation cell (1) may include a standardized cell (101). Each of the first, second, and third cells (111a, 121a, 131a) may be composed of a single standardized cell (101). The cell (101) may include a first cell (111a) placed in a first layer (110), a second cell (121a) placed in a second layer (120), and a third cell (131a) placed in a third layer (130). Here, because the number of the first, second, and third cells (111a, 121a, 131a) is different, the first, second, and third layers (110, 120, 130) each have a different area and, for example, a difference in the length extended in the second direction, may have a stepped shape.

[0108] The cell (101) may include a plurality of radiation sources (1111), a plurality of first semiconductors (1112), and a plurality of second semiconductors (1113). The plurality of first semiconductors (1112) may be P-type semiconductors. The plurality of second semiconductors (1113) may be N-type semiconductors. The second semiconductors (1113) may have a different type from the first semiconductors (1112). At least a portion of the plurality of first semiconductors (1112) may be joined with at least a portion of the second semiconductors (1113) to form a junction surface. At this time, the junction surface may be a PN junction, and a depletion layer may be formed around the PN junction. The P-type semiconductor may include, for example, silicon or diamond doped with impurities such as boron (B), aluminum (Al), gallium (Ga), or indium (In), which are Group 13 elements of the periodic table, or may include a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are Group 13 elements of the periodic table. The N-type semiconductor may include, for example, silicon or diamond doped with impurities such as nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table, or may include a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table. The radiation source (1111) may include a radioactive isotope. The radioactive isotope is not particularly limited as long as it is a material that decays and emits radiation. Radiation (120R) can be alpha rays, beta rays, or gamma rays. For example, a radioactive isotope is tritium ( 3 H, tritium), potassium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 It may include one or more selected from the group consisting of W).

[0109] The cell (101) may include, for example, three radiation sources (1111), three first semiconductors (1112), and three second semiconductors (1113), but the number of each structure is not limited thereto.

[0110] The cell (101) may have the shape of a 3x3 matrix composed of three radiation sources (1111), three first semiconductors (1112), and three second semiconductors (1113) for example to improve integration density. Within the matrix, the arrangement of the radiation sources (1111), the first semiconductors (1112), and the second semiconductors (1113) may be the same in each of the plurality of cells (111a, 121a, 131a).

[0111] The radiation source (1111) may include a first radiation source (1111a), a second radiation source (1111b), and a third radiation source (1111c). The first, second, and third radiation sources (1111a, 1111b, 1111c) may be positioned offset from each other in the second direction and the third direction. For example, as shown in FIG. 3, the cell (101) may have a 3x3 matrix shape, the first radiation source (1111a) may be located in row 1, column 1, the second radiation source (1111b) may be located in row 2, column 3, and the third radiation source (1111c) may be located in row 3, column 2.

[0112] The first semiconductor (1112) may include a first-1 type semiconductor (1112a), a first-2 type semiconductor (1112b), and a first-3 type semiconductor (1112c). The first-1, first-2, and first-3 type semiconductors (1112a, 1112b, 1112c) may be positioned offset from each other in the second direction and the third direction. For example, as shown in FIG. 3, the cell (101) may have a 3x3 matrix shape, the first-1 type semiconductor (1112a) may be located in row 1, column 2, the first-2 type semiconductor (1112b) may be located in row 2, column 1, and the first-3 type semiconductor (1112c) may be located in row 3, column 3.

[0113] The second semiconductor (1113) may include a second-1 type semiconductor (1113a), a second-2 type semiconductor (1113b), and a second-3 type semiconductor (1113c). The second-1, second-2, and second-3 type semiconductors (1113a, 1113b, 1113c) may be positioned offset from each other in the second direction and the third direction. For example, as shown in FIG. 3, the cell (101) may have a 3x3 matrix shape, the second-1 type semiconductor (1113a) may be located in row 1, column 3, the second-2 type semiconductor (1113b) may be located in row 2, column 2, and the second-3 type semiconductor (1113c) may be located in row 3, column 1.

[0114] As each of the plurality of cells (101) has the same structure in the arrangement as described above, when the plurality of cells (101) are arranged in the second direction and the third direction in each of the first, second, and third layers (110, 120, 130), a plurality of power-producing arrays can be formed. The power-producing array may mean an arrangement in which a radiation source (1111), a first semiconductor (1112), and a second semiconductor (1113) are sequentially arranged in the second direction or the third direction.

[0115] FIG. 4 is an exploded view of a portion of a radiation cell (1) according to an embodiment of the present disclosure, specifically an exploded view of a first cell layer (111) and a first insulating layer (112).

[0116] The first cell layer (111) may be laminated on the upper surface of the first insulating layer (112). The first cell layer (111) may include a plurality of first cells (111a), and each of the plurality of first cells (111a) may include a radiation source (1111), a first semiconductor (1112), and a second semiconductor (1113).

[0117] The first insulating layer (112) may include a first electrode layer (1121) and a first base (1122). The first electrode layer (1121) may be laminated on the upper surface of the first base (1122). The first electrode layer (1121) may be disposed between the first base (1122) and the first cell layer (111). The first electrode layer (1121) and the first base (1122) may include an insulating material.

[0118] Each of the plurality of layers (110, 120, 130) may include a base containing an insulating material. Among the plurality of layers (110, 120, 130), the base included in the first layer (110) may be referred to as the first base (1122). Similarly, the base included in the second layer (120) may be referred to as the second base (not shown), and the base included in the third layer (130) may be referred to as the third base (not shown).

[0119] Each of the plurality of layers (110, 120, 130) may include an electrode layer stacked on the upper surface of the base. Among the plurality of layers (110, 120, 130), the electrode layer included in the first layer (110) may be referred to as the first electrode layer (1121). Similarly, the electrode layer included in the second layer (120) may be referred to as the second electrode layer (not shown), and the electrode layer included in the third layer (130) may be referred to as the third electrode layer (not shown).

[0120] The first insulating layer (112) may include a first contact surface (1123). The first contact surface (1123) may be in contact with the first cell layer (111). The first contact surface (1123) may be in contact with a plurality of cells (111a).

[0121] The first layer (110) may include a first electrode (1124) and a second electrode (1125), at least a portion of which is disposed within the first electrode layer (1121). At least a portion of the first electrode (1124) and at least a portion of the second electrode (1125) may be disposed in the first electrode layer (1121). The first electrode (1124) and the second electrode (1125) may each independently include a conductive material.

[0122] The description of the first electrode (1124) and the second electrode (1125) given with the first layer (110) as an example may be applied equally to the second layer (120) and the third layer (130) unless there is a contradiction. For example, the second layer (120) may include a first electrode that overlaps with at least a portion of the first semiconductor included in the second layer (120) when viewed from the first direction. The second layer (120) may include a second electrode that overlaps with at least a portion of the second semiconductor included in the second layer (120) when viewed from the first direction. For example, the third layer (130) may include a first electrode that overlaps with at least a portion of the first semiconductor included in the third layer (130) when viewed from the first direction. The third layer (130) may include a second electrode that overlaps with at least a portion of the second semiconductor included in the third layer (130) when viewed from the first direction.

[0123] The first electrode (1124) may be connected to the first semiconductor (1112). The first electrode (1124) may be positioned to overlap with at least a portion of the first semiconductor (1112) when viewed from a first direction. A plurality of first electrodes (1124) may be positioned corresponding to each of the plurality of first semiconductors (1112). The first electrode (1124) may be exposed to contact outside the first contact surface (1123). The first electrode (1124) may contact the first semiconductor (1112).

[0124] The first electrode (1124) may have a curved shape. The first electrode (1124) may include a first-1 electrode portion (1124a) and a first-2 electrode portion (1124b). The first-1 electrode portion (1124a) may extend in a second direction and may be electrically connected to an adjacent second electrode (1125) in a third direction. The first-2 electrode portion (1124b) may extend in a third direction and may be electrically connected to an adjacent second electrode (1125) in a second direction.

[0125] The first layer (110) may include a second electrode (1125). The second electrode (1125) may be connected to the second semiconductor (1113). The second electrode (1125) may be arranged to overlap with at least a portion of the second semiconductor (1113) when viewed from a first direction. A plurality of second electrodes (1125) may be arranged to correspond to each of the plurality of second semiconductors (1113). The second electrode (1125) may be exposed to contact outside the first contact surface (1123). The second electrode (1125) may contact the second semiconductor (1113).

[0126] The second electrode (1125) may have a curved shape. The second electrode (1125) may include a second-1 electrode portion (1125a) and a second-2 electrode portion (1125b). The second-1 electrode portion (1125a) may extend in a second direction and may be electrically connected to an adjacent first electrode (1124) in a third direction. The second-2 electrode portion (1125b) may extend in a third direction and may be electrically connected to an adjacent first electrode (1124) in a second direction.

[0127] The first-1 electrode portion (1124a) and the second-1 electrode portion (1125a), which are spaced apart from each other in the third direction, can be electrically connected. The first-2 electrode portion (1124b) and the second-2 electrode portion (1125b), which are spaced apart from each other in the second direction, can be electrically connected.

[0128] The radiation cell (1) may include a first wiring (1128) connecting a first electrode (1124) and a second electrode (1125). The first electrode (1124) and the second electrode (1125) may be disposed inside a first electrode layer (1121), and the first wiring (1128) may extend inside a first base (1122) to connect the first electrode (1124) and the second electrode (1125).

[0129] The above description may be applied in the same way to the remaining layers (120, 130) excluding the first layer (110) among the multiple layers (110, 120, 130) as long as there is no contradiction.

[0130] A radiation cell (1) according to an embodiment of the present disclosure can improve power generation efficiency by arranging a first semiconductor (1112) and a second semiconductor (1113) adjacent to both the second direction and the third direction, and forming a PN junction in both the second direction and the third direction.

[0131] Each of the first, second, and third layers (110, 120, 130) may include first and second wiring (1128, 1129), and the first and second wiring (1128, 1129) included in each layer (110, 120, 130) may be named “wiring”.

[0132] The description of the structure of the first layer (110) described above with reference to FIG. 4 can be applied in the same way to the second layer (120) and the third layer (130).

[0133] FIG. 5 is a cross-sectional view of a portion of a radiation cell (1) according to an embodiment of the present disclosure, and is a cross-sectional view along the A-A' reference line shown in FIG. 2.

[0134] A plurality of cells (111a) may be arranged in a second direction. Each cell (111a) may include a radiation source (1111), a first semiconductor (1112), and a second semiconductor (1113). The radiation source (1111), the first semiconductor (1112), and the second semiconductor (1113) may be arranged sequentially in the second direction.

[0135] The first electrode (1124) and the second electrode (1125) may be disposed inside the first electrode layer (1121). The radiation cell (1) may include a first wiring (1128) connecting the first electrode (1124) and the second electrode (1125). At least a portion of the first wiring (1128) may be disposed inside the first base (1122). The first wiring (1128) may extend in a second direction. The first wiring (1128) may extend inside the first base (1122) toward the first edge (1126) and be electrically connected to the first pad (1127).

[0136] Radiation generated from a radiation source (1111) is projected onto the junction surface of the first semiconductor (1112) and the second semiconductor (1113) to induce the movement of holes and electrons, and the holes and electrons can cause current to flow through the wiring (1128) connecting the first electrode (1124) and the second electrode (1125). The current flowing through the first wiring (1128) can be transmitted to the wiring layer (wiring layer (160) in FIG. 1) through the first pad (1127) and the first via (first via (181) in FIG. 2).

[0137] The description of the structure of the first layer (110) described above with reference to FIG. 5 can be applied in the same way to the second layer (120) and the third layer (130).

[0138] FIG. 6 is a cross-sectional view of a portion of a radiation cell (1) according to an embodiment of the present disclosure, and is a cross-sectional view along the B-B' reference line shown in FIG. 2.

[0139] A plurality of cells (111a) may be arranged in a third direction. Each cell (111a) may include a radiation source (1111), a first semiconductor (1112), and a second semiconductor (1113). The radiation source (1111), the second semiconductor (1113), and the first semiconductor (1112) may be arranged sequentially in the third direction.

[0140] The first electrode (1124) and the second electrode (1125) may be disposed inside the first electrode layer (1121). The radiation cell (1) may include a second wiring (1129) connecting the first electrode (1124) and the second electrode (1125). The second wiring (1129) may be disposed inside the first base (1122). The second wiring (1129) may extend in a third direction. The second wiring (1129) may extend inside the first base (1122) toward the first edge (the first edge (1126) in FIG. 5) and be electrically connected to the first pad (the first pad (1127) in FIG. 5).

[0141] Radiation generated from a radiation source (1111) is projected onto the junction surface of the first semiconductor (1112) and the second semiconductor (1113) to induce the movement of holes and electrons, and the holes and electrons can cause current to flow through the second wiring (1129) connecting the first electrode (1124) and the second electrode (1125). The current flowing through the second wiring (1129) can be transmitted to the wiring layer (wiring layer (160) in FIG. 1) through the first pad (first pad (1127) in FIG. 5) and the first via (first via (181) in FIG. 2).

[0142] The description of the structure of the first layer (110) described above with reference to FIG. 6 can be applied in the same way to the second layer (120) and the third layer (130).

[0143] Meanwhile, although terms indicating direction such as up and down have been used in this specification, these terms are used merely for convenience of explanation, and it is obvious to a person skilled in the art that they may vary depending on the location of the object or the position of the observer.

[0144] Although various embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those with average knowledge in the art that various modifications and variations are possible within the scope of the technical concept of the present invention as described in the claims. Furthermore, the above-described embodiments may be implemented by deleting some components, and each embodiment may be implemented in combination with one another.

Claims

1. Substrate; A wiring layer spaced apart with respect to a first direction perpendicular to the surface of the substrate; A plurality of layers disposed between the substrate and the wiring layer, each stacked in the first direction; and It includes vias that extend in the first direction and connect at least a portion of the plurality of layers to the wiring layer, A radiation cell comprising each of the above plurality of layers including a radiation source, a first semiconductor containing one of a P-type and an N-type impurity, and a second semiconductor containing one of a P-type and an N-type impurity having a different type from the first semiconductor.

2. In Paragraph 1, The above plurality of layers are, A first layer extending by a first length in a second direction parallel to the surface of the substrate and closest to the wiring layer among the plurality of layers; and A radiation cell comprising the above-mentioned first layer and a second layer stacked in the above-mentioned first direction and extended in the above-mentioned second direction by a second length longer than the first length.

3. In Paragraph 1, Each of the above plurality of layers is, An edge spaced apart from the wiring layer with respect to the first direction; and A radiation cell comprising a pad disposed at the above edge and connected to the above via.

4. In Paragraph 2, The above via is, A first via connecting the first layer and the wiring layer and having a first height; and A radiation cell comprising a second via connecting the second layer and the wiring layer, and having a second height longer than the first height.

5. In Paragraph 1, The above via is A radiation cell comprising a plurality of vias spaced apart from each other based on a second direction horizontal to the surface of the substrate and a third direction horizontal to the surface of the substrate and intersecting the second direction.

6. In Paragraph 1, Each of the above plurality of layers is, A radiation cell comprising a plurality of cells, each comprising the radiation source, the first semiconductor, and the second semiconductor.

7. In Paragraph 1, Each of the above plurality of layers is, A cell layer comprising the above radiation source, the above first semiconductor and the above second semiconductor; and A radiation cell comprising an insulating layer disposed on the cell layer and containing an insulating material.

8. In Paragraph 1, A first electrode disposed to overlap with at least a portion of the first semiconductor when viewed from the first direction; and A radiation cell further comprising a second electrode positioned to overlap with at least a portion of the second semiconductor when viewed from the first direction.

9. In Paragraph 8, The first electrode above is, A first-1 electrode portion extending in a second direction parallel to the surface of the substrate and electrically connected to the second electrode adjacent in a third direction horizontal to the surface of the substrate and intersecting the second direction; and A radiation cell comprising a first-second electrode portion that extends in the third direction and is electrically connected to the second electrode adjacent in the second direction.

10. In Paragraph 8, Each of the above plurality of layers is, A base containing an insulating material; An electrode layer laminated on the upper surface of the base, wherein at least a portion of the first electrode and at least a portion of the second electrode are disposed therein; and A radiation cell comprising wiring connecting the first electrode and the second electrode, wherein at least a portion thereof is disposed inside the base.

Images