Radioactive cell

Abstract

The present application may provide a radioactive cell comprising: a semiconductor layer including a p-type semiconductor extending in a first direction and an n-type semiconductor extending in the first direction and disposed adjacent to the p-type semiconductor; a radiation source disposed to be spaced apart from the semiconductor layer and emitting radiation; an energy distribution layer disposed on the semiconductor layer and configured to decelerate the radiation; and an electrode including a cathode electrically connected to the p-type semiconductor and an anode electrically connected to the n-type semiconductor, wherein the energy distribution layer includes a first region which is a region adjacent to the radiation source and a second region which is a region other than the first region, and the thickness of the second region is smaller than the thickness of the first region.

Description

radioactive battery

[0001] Cross-citation with related applications

[0002] This application is based on Korean Patent Applications No. 10-2024-0184076 and No. 10-2025-0195114, which were filed with the Korean Intellectual Property Office on December 11, 2024 and December 10, 2025, respectively, and whose contents are incorporated in whole into this application by reference herein, and claims priority thereof.

[0003] Technology field

[0004] This application relates to a radioactive battery.

[0005] A radioisotope is an element that decays into a stable isotope while emitting radiation. Known modes of radioisotope decay include alpha decay, beta decay, and gamma decay. Depending on the type of radioisotope, it emits radiation such as alpha, beta, or gamma rays as it decays. Meanwhile, the time it takes for a radioisotope to decay and reduce its radioactivity to half of its initial level is called the half-life. The type of radiation emitted during decay and the half-life are determined by the type of radioisotope.

[0006] A betavoltaic cell, which is one type of radioactive battery, is a battery that utilizes beta rays, which are radiation emitted from radioactive isotopes. The radiation is absorbed by a semiconductor with a PN junction, forming electron-hole pairs from the depletion layer, and the formed electrons and holes can be used as an electrical power source. In other words, a radioactive battery is a battery designed to convert the nuclear fission energy of a radioactive isotope into electrical energy for use as an electrical power source.

[0007] The present application aims to provide a radioactive battery that can be applied to electronic products requiring high power by producing high-density power and improving durability.

[0008] A radioactive battery according to one embodiment of the present application comprises: a semiconductor layer including a p-type semiconductor extended in a first direction and an n-type semiconductor extended in the first direction and disposed adjacent to the p-type semiconductor; a radiation source disposed spaced apart from the semiconductor layer and emitting radiation; an energy distribution layer disposed on the semiconductor layer and slowing down the radiation; and an electrode including a cathode electrically connected to the p-type semiconductor and an anode electrically connected to the n-type semiconductor, wherein the energy distribution layer comprises a first region adjacent to the radiation source and a second region other than the first region, and the thickness of the second region may be smaller than the thickness of the first region.

[0009] In a radioactive battery according to one embodiment of the present application, the width of the radiation source in the first direction may be smaller than the width of the p-type semiconductor in the first direction and the width of the n-type semiconductor in the first direction.

[0010] In a radioactive battery according to one embodiment of the present application, the thickness of the energy distribution layer may decrease as it moves further away from the radiation source.

[0011] In a radioactive battery according to one embodiment of the present application, the thickness of the energy distribution layer may gradually decrease as it moves further away from the radiation source.

[0012] A radioactive battery according to one embodiment of the present application may further include a reflective layer that surrounds the radiation source together with the energy distribution layer and reflects the radiation while being spaced apart from the radiation source.

[0013] In a radioactive battery according to one embodiment of the present application, the reflective layer can reflect the radiation toward the semiconductor layer.

[0014] A radioactive battery according to one embodiment of the present application may further include a resin layer disposed between the energy distribution layer and the reflection layer.

[0015] In a radioactive battery according to one embodiment of the present application, the radiation source may be disposed within the resin layer.

[0016] A radioactive battery according to one embodiment of the present application may further include a magnetic field generator that applies a magnetic field to the semiconductor layer.

[0017] In a radioactive battery according to one embodiment of the present application, the semiconductor layer is a plurality of times, and the plurality of semiconductor layers may be stacked in a second direction intersecting the first direction.

[0018] A radioactive battery according to one embodiment of the present application further includes a magnetic field generator that applies a magnetic field to the semiconductor layer, and the magnetic field generator can apply the magnetic field in a third direction that intersects the first direction and the second direction.

[0019] The present application can provide a radioactive battery that can be applied to electronic products requiring high power by producing high-density power and improving durability.

[0020] The drawings shown in this application are in accordance with embodiments of this application, and the ratios of the width, height, or thickness (or height) of each component are intended to explain this application in detail and may differ from the actual. Additionally, in the coordinate system shown in the drawings, each axis may be perpendicular to the others, the direction indicated by the arrow may be the + direction, and the direction exactly opposite to the direction indicated by the arrow (a direction rotated 180 degrees) may be the - direction.

[0021] FIG. 1 is a simplified drawing illustrating a radioactive battery according to one embodiment of the present application.

[0022] Prior to the detailed description of this application, terms and words used in this specification and claims may not be interpreted as being limited to their ordinary or dictionary meanings. Furthermore, based on the principle that the inventor may appropriately define the concept of terms to best describe their invention, they may be interpreted in a meaning and concept consistent with the technical spirit of the invention. The embodiments described in this specification and the configurations illustrated in the drawings are merely the most preferred embodiments of this application and may not represent all of the technical spirit of this application. Therefore, various equivalents and modifications that can replace them may exist at the time of filing this application.

[0023] Identical reference numbers or symbols in each drawing attached to this specification may represent parts or components that perform substantially the same function. For convenience of explanation and understanding, the same reference numbers or symbols may be used to describe different embodiments. That is, even if components having the same reference number are depicted in multiple drawings, the multiple drawings may not all represent a single embodiment.

[0024] In the following description, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "comprising" or "constituting" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0025] Additionally, in the following description, expressions such as upper side, top, lower side, bottom, side, front, and rear are based on the direction depicted in the drawing, and may be expressed differently if the direction of the object changes.

[0026] Additionally, in this specification and claims, terms including ordinal numbers, such as "first," "second," etc., may be used to distinguish between components. Such ordinal numbers are used to distinguish identical or similar components from one another, and the meaning of the terms should not be limited by the use of such ordinal numbers. For example, the order of use or arrangement of components combined with such ordinal numbers should not be limited by the number. If necessary, each ordinal number may be used interchangeably.

[0027] Hereinafter, embodiments of the present application will be described in detail with reference to the attached drawings. However, the scope of the present application is not limited to the embodiments presented. For example, a person skilled in the art who understands the scope of the present application may propose other embodiments that fall within the scope of the scope of the present application by adding, changing, or deleting components, and such are also to be considered to be within the scope of the scope of the present application. In the drawings, the shapes and sizes of elements may be exaggerated for clearer explanation.

[0028] FIG. 1 is a simplified drawing illustrating a radioactive battery (10) according to one embodiment of the present application.

[0029] The present application may provide a radioactive battery (10) that can be applied to electronic products requiring high power by generating high-density energy. Electronic products requiring high power may be, for example, semiconductor memory such as DRAM or NAND FLASH, processors, mobile devices, automobiles, drones, and computers, and any other products that consume power. In this specification, electronic products requiring high power may be referred to as loads.

[0030] In one example, the radioactive battery (10) may include a generator (100). The generator (100) may generate electron-hole pairs formed by irradiating radiation (120R) onto a depletion layer.

[0031] In one example, the generator (100) may include an electrode (110), a radiation source (120), a semiconductor layer (130), and an energy distribution layer (140). That is, the radioactive battery (10) may include an electrode (110), a radiation source (120), a semiconductor layer (130), and an energy distribution layer (140). In one example, the radiation source (120) may be a beta source that emits beta rays, and in this case, the radioactive battery (10) may be a beta battery.

[0032] In one example, the radioactive battery (10) may include a shielding layer (200) that covers at least a portion of the generator (100). The shielding layer (200) may shield radiation (120R) generated from a radiation source (120).

[0033] In one example, the shielding layer (200) may include a first shielding layer (210) that buries at least a portion of the generator (100) and a second shielding layer (220) that surrounds at least a portion of the first shielding layer (210).

[0034] In one example, the first shielding layer (210) may include a resin. In this specification, the resin is not particularly limited, but may include one or more selected from the group consisting of (meth)acrylic resin, epoxy resin, polyester resin, polyurethane resin and silicone resin.

[0035] In one example, the first shielding layer (210) can shield, for example, beta rays, which are one of the radiation (120R) generated from a radiation source (120).

[0036] In one example, the second shielding layer (220) may contain lead (Pb). The second shielding layer (220) may shield electromagnetic waves generated by, for example, bremsstrahlung. For example, if the radiation (120R) generated from the radiation source (120) is beta rays, when the beta rays pass through the first shielding layer (210), X-rays may be generated due to bremsstrahlung, and the X-rays generated therefrom can be shielded by the second shielding layer (220).

[0037] In one example, the semiconductor layer (130) can form electron-hole pairs by radiation (120R) emitted from a radiation source (120). In one example, the semiconductor layer (130) can be provided as an inorganic layer, an organic layer, an organic-inorganic hybrid layer, a dye-sensitized layer, or a combination thereof, and can generate electrical energy by forming electron-hole pairs by radiation (120R).

[0038] In another example, the semiconductor layer (130) may include an organic material used in an organic layer that receives light and generates electrical energy in the field of solar cells, etc. For example, the semiconductor layer (130) may include a thiophene-type compound. Meanwhile, the semiconductor layer (130) may be an organic-inorganic hybrid type in which the aforementioned inorganic material and organic material are mixed.

[0039] In one example, the inorganic layer may include an inorganic material that generates electrical energy upon receiving light. The inorganic material is not particularly limited but may include, for example, one or more of silicon, single-crystal silicon, polycrystalline silicon, amorphous silicon, InGaSe, CuSe, InSe, InGaP, GaAs, chalcopyrite compounds, perovskite compounds, and castoride compounds.

[0040] In one example, InGaSe may comprise one or more of In, In4Se3, InSe, In2Se3, GaSe, Ga2Se3, and Se, CuSe may comprise one or more of Cu, Cu2Se, CuSe2, and Se, and InSe may comprise one or more of In, In4Se3, InSe, In2Se3, and Se, or a mixture thereof. The chalcopyrite compound may comprise, for example, one of CuAlS2, CuAlSe2, CuAlTe2, CuGaS2, CuGaSe2, CuGaTe2, CuInS2, CuInSe2, CuInTe2, AgAlS2, AgAlSe2, AgAlTe2, AgGaS2, AgGaSe2, AgGaTe2, AgInS2, AgInSe2, and AgInTe2. The perovskite compound may comprise, for example, one or more of SrTiO3 and CaTiO3. The castorite compound may include, for example, a castorite compound of group I2-II-IV-VI4, and specifically may include one or more of Cu2ZnSnS4, Cu2ZnSnSe4, Cu2ZnGeS4, Cu2ZnGeSe4, Cu2MnSnS4, Cu2MnSnSe4, Cu2MnGeS4, Cu2MnGeSe4, Ag2ZnSnS4, Ag2ZnSnSe4, Ag2ZnGeS4, Ag2MnSnS4, Ag2MnSnSe4, Ag2MnGeS4, and Ag2MnGeSe4.

[0041] In one example, the organic layer may include an organic material that generates electrical energy upon receiving light. The organic material is not particularly limited, but for example, fullerene (C 60It may include one or more of the following: )-type compounds, phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), phenylpyridine derivatives such as 4,6-bis(3,5-di-4-pyridinylphenyl)-2-methylpyrimidine (B4PymPm) or tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), thiophene derivatives such as poly(3-hexylthiophene-2,5-diyl)(P3HT), phthalocyanine derivatives, porphyrin derivatives, triarylamine derivatives, carbazole derivatives, and oligothiophene.

[0042] In one example, the organic-inorganic hybrid layer may include an organic-inorganic hybrid material that generates electrical energy upon receiving light. The organic-inorganic hybrid material is not particularly limited but may include organic-inorganic perovskite compounds, for example, halide-based organic-inorganic perovskite compounds. The organic-inorganic hybrid material may include CH3NH3PbI3, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3SnI3, CH3NH3SnBr3, CH3NH3SnCl3, and CH3NH3PbI3 (3-x) Cl x , CH3NH3PbI (3-x) Br x , CH3NH3PbBr (3-x) Cl x , CH3NH3Pb (1-y) Sn y I3, CH3NH3Pb (1-y) Sn y Br3, CH3NH3Pb (1-y) Sn y Cl3, CH3NH3Pb (1-y) Sn y I (3-x) Cl x , CH3NH3Pb (1-y) Sn y I (3-x) Br x and CH3NH3Pb (1-y) Sn y Br (3-x) Cl xIt may include one or more of the above compounds (0≤x≤3, 0≤y≤1), and may also include CFH2NH3, CF2HNH3, CF3NH3, or NH2CH=NH2 instead of CH3NH3 in the above compounds.

[0043] In one example, the dye-sensitized layer may include a dye that generates electrical energy upon receiving light. The dye may include one or more of ruthenium complexes, indoline organic dyes, and natural dyes, although it is not particularly limited. Ruthenium complexes may include one or more of, for example, N3 and N719. Indoline organic dyes may include, for example, D149. Natural dyes are those that can be extracted from fruits or vegetables, and may include one or more of, for example, anthocyanin, chlorophyll, beta-carotene, curcumin, betalain, and rosmarinic acid.

[0044] In one example, the semiconductor layer (130) may include a scintillator that absorbs the energy of radiation generated from a radiation source (120) and converts it into light energy or electrical energy.

[0045] For example, the semiconductor layer (130) may include at least a scintillator inside. In another example, the semiconductor layer (130) may include a thin film layer including a scintillator provided on at least one surface.

[0046] In one example, the scintillator may include one or more of inorganic and organic compounds, though not specifically limited. Inorganic compounds are, for example, NaI(Tl), CsI(Tl), GoS, CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), BGO, BaF2, CaF2(Eu), ZnS(Ag), CaWO4, CdWO4, YAG(Ce) (Y3Al5O12 It may include one or more of (Ce)), GSO, LSO, GAGG:Ce, ZnO(Ga), LaCl3(Ce), and LaBr3(Ce). Organic compounds may include, for example, one or more of anthracene, stilbene, naphthalene, and polyethylene naphthalate.

[0047] In one example, the semiconductor layer (130) may include a p-type semiconductor (131) extended in a first direction (D1) and an n-type semiconductor (132) extended in the first direction (D1) and disposed adjacent to the p-type semiconductor (131). In one example, the p-type semiconductor (131) may include silicon or diamond doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or may include a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0048] In one example, the n-type semiconductor (132) may include silicon or diamond doped with, for example, nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are group 15 elements of the periodic table, or may include a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are group 15 elements of the periodic table.

[0049] In this specification, a compound semiconductor means a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs) or gallium nitride (GaN).

[0050] In one example, the p-type semiconductor (131) and the n-type semiconductor (132) may each independently include a metal oxide having the chemical formula AMO3. Here, A is one selected from La, Ba, Sr, and K, and M may be one selected from Al, In, Ga, Ti, Sn, Hf, Ta, and Zr. In some cases, the p-type semiconductor (131) and the n-type semiconductor (132) may each independently include a plurality of metal oxides of different types. Different types may mean that the elements of A or M are different. In one example, the p-type semiconductor (131) and the n-type semiconductor (132) may form a homojunction with each other.

[0051] For example, the p-type semiconductor (131) and the n-type semiconductor (132) are each independently BaSnO3, BaHfO3, BaZrO3, BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x (Here 0 <x<1) 및 LaAlO3중 하나 이상을 포함할 수 있다.

[0052] In one example, the semiconductor layer (130) may be manufactured, for example, by deposition or epitaxial growth, but is not limited thereto. Here, the deposition may be one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0053] In one example, the semiconductor layer (130) may be multiple. The multiple semiconductor layers (130) may be stacked in a second direction (D2) that intersects the first direction (D1).

[0054] In the present specification, the first direction (D1) may mean a direction parallel to the surface of the semiconductor layer (130). The second direction (D2) may mean a direction perpendicular to the surface of the semiconductor layer (130) and may intersect the first direction (D1). The third direction (D3) may mean a direction parallel to the surface of the semiconductor layer (130) while intersecting the first direction (D1). The third direction (D3) may intersect the first direction (D1) and the second direction (D2). In one example, the first direction (D1) and the second direction (D2) may be perpendicular to each other, the second direction (D2) and the third direction (D3) may be perpendicular to each other, and the third direction (D3) and the first direction (D1) may be perpendicular to each other.

[0055] In one example, the width of the first direction (D1) of the p-type semiconductor (131) and the width of the first direction (D1) of the n-type semiconductor (132) may be the same. Here, being the same may mean being substantially the same. Being substantially the same may mean that the ratio of the difference between the width of the first direction (D1) of the p-type semiconductor (131) and the width of the first direction (D1) of the n-type semiconductor (132) is 5% or less, based on the width of the first direction (D1) of the p-type semiconductor (131).

[0056] In one example, the radiation source (120) may emit radiation (120R). The radiation source (120) may be spaced apart from the semiconductor layer (130). For example, the radiation source (120) may be spaced apart from the semiconductor layer (130) with respect to a second direction (D2).

[0057] In one example, the radiation source (120) may include a radioactive isotope. The radioactive isotope is not particularly limited as long as it is a material that decays to emit radiation (120R). The radiation (120R) may be alpha rays, beta rays, or gamma rays. For example, the radioactive isotope is americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 252 Cf) and berkelium-249( 249It may include alpha-emitting isotopes containing one or more of Bk). In another example, the radioactive isotope is tritium ( 3 H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 Os), Thulium-171( 171 Tm), tantalum-179( 179 Ta), cadmium-109( 109 Cd), germanium-68 68 Ge), cerium-159( 159 Ce) and tungsten-181( 181 It may include a beta-emitting isotope containing one or more of W). In another example, the radioactive isotope is cobalt-60 ( 60 Co), cesium-137 137 Cs), iodine-131( 131 I), Gallium-67( 67 Ga) and thallium-201( 201It may include a gamma-emitting isotope containing one or more of Tl). The radioactive isotope contained in the radiation source (120) may include an alpha-emitting isotope. The radioactive isotope contained in the radiation source (120) may include a beta-emitting isotope. The radioactive isotope contained in the radiation source (120) may include one or more of an alpha-emitting isotope and a beta-emitting isotope. The radioactive isotope contained in the radiation source (120) may include one or more of an alpha-emitting isotope, a beta-emitting isotope, and a gamma-emitting isotope. Preferably, the radioactive isotope contained in the radiation source (120) may include a beta-emitting isotope.

[0058] In one example, the radiation source (120) may be manufactured by one or more of, for example, electroplating, electroless plating, and chemical vapor deposition (CVD), but is not limited thereto. Among these, the electroplating method may be suitable for the radiation shielding and safety of the worker.

[0059] In one example, the radiation source (120) can be prepared as a plating solution for electroplating. For example, nickel-63 ( 63 When using Ni), nickel-62 ( 62 Nickel-63 (Ni) by irradiating with neutrons 63 After manufacturing Ni), chlorinate it 63 Nickel-63 by generating NiCl2 ( 63 A plating solution for Ni can be prepared. Or Nickel-62 ( 62 First, chlorine (Ni) 62 After preparing NiCl2, irradiate with neutrons 63 Nickel-63 containing NiCl2 ( 63 A plating solution for Ni can be prepared, but is not limited thereto.

[0060] In one example, the plating solution may further include additives such as a pH regulator and a pH stabilizer, which can help in the uniform formation of the radiation source (120) by controlling the plating speed or growth rate.

[0061] In one example, the width of the radiation source (120) in the first direction (D1) may be smaller than the width of the p-type semiconductor (131) in the first direction (D1) and the width of the n-type semiconductor (132) in the first direction (D1). By optimizing the size of the radiation source (120), the absolute amount of radiation (120R) generated during the operation of the radioactive battery (10) can be relatively reduced while ensuring economic efficiency, thereby minimizing damage to the semiconductor layer (130) caused by radiation (120R).

[0062] In one example, the width of the radiation source (120) in the first direction (D1) may be 50% or less of the width of the p-type semiconductor (131) in the first direction (D1). In one example, the width of the radiation source (120) in the first direction (D1) may be 50% or less of the width of the n-type semiconductor (132) in the first direction (D1).

[0063] In one example, the electrode (110) may include a cathode (111) electrically connected to a p-type semiconductor (131) and an anode (112) electrically connected to an n-type semiconductor (132). In one example, the cathode (111) may be positioned on the opposite side of the anode (112) with respect to the first direction (D1).

[0064] In one example, the cathode (111) and the anode (112) are electrically conductive without causing physical and chemical changes, and their type, size, and shape are not particularly limited. For example, the cathode (111) and the anode (112) may each independently include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or a transparent oxide such as tin oxide (FTO) or indium oxide (ITO, In2O3) doped with fluorine (F), or a carbon-based compound such as a carbon nanotube, graphene, or graphene oxide.

[0065] In one example, the cathode (111) and the anode (112) may each be manufactured independently, for example, through deposition or epitaxial growth, but are not limited thereto.

[0066] In one example, the energy distribution layer (140) may be placed on the semiconductor layer (130) and may reduce radiation (120R). When viewed from a second direction (D2), the energy distribution layer (140) may overlap at least partially with the semiconductor layer (130).

[0067] In one example, the energy distribution layer (140) is not particularly limited as long as it can reduce the speed of the radiation (120R) and may include, for example, diamond. Through the energy distribution layer (140), the semiconductor layer (130) can minimize damage caused by the high energy of the radiation (120R) emitted from the radiation source (120). For example, if the radiation source (120) is a beta source, the radiation (120R) emitted from it may be high-speed beta rays, and if high-speed beta rays are applied directly to the semiconductor layer (130), the semiconductor layer (130) may easily deteriorate. The energy distribution layer (140) can slow down the high-speed beta rays but control them to have an appropriate energy sufficient for electron-hole pairs to be formed in the depletion layer, thereby allowing the radioactive battery (10) to produce high-density power and improve durability.

[0068] In one example, the energy distribution layer (140) may include a first region (141) which is an area adjacent to the radiation source (120) and a second region (142) which is an area other than the first region (141). The first region (141) may be an area that overlaps with the radiation source (120) when viewed from the second direction (D2), and the second region (142) may be an area that does not overlap with the radiation source (120) when viewed from the second direction (D2).

[0069] In one example, the thickness (H) of the second region (142) 142 ) is the thickness (H) of the first region (141) 141 It can be smaller than ). The thickness (H) of the second region (142) 142 ) may mean the thickness for a specific point in the second region (142), and the thickness (H) of the first region (141). 141 ) may mean the thickness for a specific point in the first region (141). For example, a second point (P), which is a specific point in the second region (142). 142 Thickness (H) for ) 142 ) is a specific point in the first area (141), which is the first point (P 141Thickness (H) for ) 141 It can be smaller than ). The thickness (H) of the first region (141) 141 ) and the thickness (H) of the second region (142) 142 ) may mean the width for the second direction (D2) of each area (141, 142).

[0070] In one example, the energy distribution layer (140) has a thickness (H) as it gets further away from the radiation source (120). 140 ) can be reduced. The thickness (H) of the energy distribution layer (140) 140 ) may mean the width for the second direction (D2). The energy distribution layer (140) has a thickness (H) as it moves further away from the radiation source (120). 140 ) can gradually decrease.

[0071] In one example, the energy distribution layer (140) has a thickness (H) as it is closer to the radiation source (120). 140 ) can be large. Radiation (120R) emitted from a radiation source (120) can have its speed reduced when passing through an energy distribution layer (140), and the thicker the layer, the more the speed can be reduced relatively.

[0072] In one example, the radiation (120R) has higher energy the closer it is to the radiation source (120), and by making the thickness of the energy distribution layer (140) thicker in response, the energy distribution layer (140) can be made such that the energy of the radiation (120R) reaching the semiconductor layer (130) is relatively uniform.

[0073] In one example, the generator (100) may include a reflective layer (150) that surrounds a radiation source (120) together with an energy distribution layer (140) and reflects radiation (120R) while being spaced apart from the radiation source (120).

[0074] In one example, the reflective layer (150) can reflect radiation (120R) toward the semiconductor layer (130). That is, the radioactive battery (10) may include a reflective layer (150) that surrounds the radiation source (120) together with the energy distribution layer (140) and reflects radiation (120R) while being spaced apart from the radiation source (120).

[0075] In one example, the reflective layer (150) may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, or AlAsP, which are doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are group 15 elements of the periodic table (i.e., n-type dopants), or boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table (i.e., p-type dopants).

[0076] In one example, the reflective layer (150) may comprise one or more of fused silica, sapphire, calcium fluoride (CaF2), magnesium fluoride (MgF2), BK7 glass, zinc selenide (ZnSe), germanium telluride (GeTe), molybdenum (Mo), and silver (Ag) doped with an n-type dopant or a p-type dopant. The fused silica, sapphire, calcium fluoride (CaF2), magnesium fluoride (MgF2), BK7 glass, zinc selenide (ZnSe), germanium telluride (GeTe), molybdenum (Mo), and silver (Ag) included in the reflective layer (150) may be used as materials for optical devices such as Brewster's window. This allows the reflective layer (150) to reflect at least a portion of the radiation (120R), and in particular, to reflect beta rays.

[0077] In one example, the radioactive battery (10) may include a resin layer (160) disposed between an energy distribution layer (140) and a reflection layer (150). The resin layer (160) may fill the space between the energy distribution layer (140) and the reflection layer (150).

[0078] In one example, the resin layer (160) may include a resin that does not cause physical and chemical changes with the energy distribution layer (140) and the reflection layer (150). For example, the resin layer (160) may include one or more selected from the group consisting of (meth)acrylic resin, epoxy resin, polyester resin, polyurethane resin, and silicone resin. In one example, a radiation source (120) may be placed within the resin layer (160). That is, the resin layer (160) may fix the position of the radiation source (120).

[0079] In one example, the radioactive battery (10) may include a magnetic field generator (300) that applies a magnetic field (300B) to a semiconductor layer (130). The magnetic field generator (300) may apply the magnetic field (300B) not only to the semiconductor layer (130) but also to other components of the radioactive battery (10). The magnetic field generator (300) may include a permanent magnet, although it is not particularly limited as long as it can apply the magnetic field (300B) to the semiconductor layer (130).

[0080] In one example, the magnetic field generator (300) can promote the movement of electrons and holes formed in the semiconductor layer (130) by radiation (120R) to the cathode (111) and anode (112), respectively, through the Hall effect by applying a magnetic field (300B) to the semiconductor layer (130). This can improve the power efficiency of the radioactive battery (10).

[0081] In one example, the magnetic field generator (300) can apply a magnetic field (300B) in a third direction (D3). The magnetic field generator (300) can be arranged to extend in a first direction (D1) and can be arranged on the third direction (D3) of the generator (100).

[0082] In one example, the direction coming out through the ground can be called the +3rd direction (+D3), and the direction going into the ground can be called the -3rd direction (-D3).

[0083] For example, the magnetic field generator (300) may include a first magnetic field generator positioned so that its N pole faces the semiconductor layer (130) on the +3 direction (+D3) of the generator (100) so that the magnetic field (300B) is applied in the -3 direction (-D3), and a second magnetic field generator positioned so that its S pole faces the semiconductor layer (130) on the -3 direction (-D3) of the generator (100). In one example, the polarity of the first magnetic field generator facing the semiconductor layer (130) may be opposite to the polarity of the second magnetic field generator facing the semiconductor layer (130).

[0084] Although various embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and it will be obvious to those with average knowledge in the art that various modifications and variations are possible within the scope of the technical concept of the present invention as described in the claims. Furthermore, the above-described embodiments may be implemented by deleting some components, and each embodiment may be implemented in combination with one another.

[0085] [Explanation of the symbol]

[0086] 10... radioactive battery

[0087] 100... generator

[0088] 110... electrode

[0089] 111... Cathode

[0090] 112... anode

[0091] 120... radiation source

[0092] 130... semiconductor layer

[0093] 131... p-type semiconductor

[0094] 132... n-type semiconductor

[0095] 140... energy distribution layer

[0096] 141... First Zone

[0097] 142... Second Zone

[0098] 150... reflection layer

[0099] 160... resin layer

[0100] 200... shielding layer

[0101] 300... magnetic field generator

Claims

1. A semiconductor layer comprising a p-type semiconductor extended in a first direction and an n-type semiconductor extended in the first direction and disposed adjacent to the p-type semiconductor; A radiation source that is spaced apart from the semiconductor layer and emits radiation; An energy distribution layer disposed on the semiconductor layer and slowing down the radiation; and The electrode comprises a cathode electrically connected to the p-type semiconductor and an anode electrically connected to the n-type semiconductor, and The energy distribution layer includes a first region adjacent to the radiation source and a second region other than the first region, and The thickness of the second region is smaller than the thickness of the first region. Radioactive battery.

2. In Paragraph 1, The width of the radiation source in the first direction is smaller than the width of the p-type semiconductor in the first direction and the width of the n-type semiconductor in the first direction. Radioactive battery.

3. In Paragraph 1, The above energy distribution layer has a thickness that decreases as it moves further away from the radiation source, Radioactive battery.

4. In Paragraph 3, The above energy distribution layer has a thickness that gradually decreases as it moves further away from the radiation source. Radioactive battery.

5. In Paragraph 1, A reflection layer that surrounds the radiation source together with the energy distribution layer and reflects the radiation while spaced apart from the radiation source, further comprising Radioactive battery.

6. In Paragraph 5, The above reflection layer reflects the radiation toward the semiconductor layer, Radioactive battery.

7. In Paragraph 5, A resin layer further comprising the energy distribution layer and the reflection layer disposed between the above energy distribution layer and the above reflection layer, Radioactive battery.

8. In Paragraph 7, The above radiation source is disposed within the resin layer, Radioactive battery.

9. In Paragraph 1, A magnetic field generator further comprising a magnetic field generator that applies a magnetic field to the semiconductor layer. Radioactive battery.

10. In Paragraph 1, The above semiconductor layer is multiple, and A plurality of the above semiconductor layers are stacked in a second direction intersecting the first direction, Radioactive battery.

11. In Paragraph 10, It further includes a magnetic field generator that applies a magnetic field to the semiconductor layer, and The magnetic field generator applies the magnetic field in a third direction intersecting the first direction and the second direction, Radioactive battery.

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