Isotope battery stack

Abstract

Provided is an isotope battery stack comprising: a plurality of isotope battery units stacked in a first direction; at least one cooling hole passing through the plurality of isotope battery units; and a refrigerant supply unit capable of supplying a refrigerant to the cooling hole. The isotope battery stack according to embodiments of the present invention has excellent heat dissipation and cooling performance.

Description

Isotope battery laminate

[0001] The present invention relates to an isotope battery laminate, and more specifically, to an isotope battery laminate with excellent heat dissipation and cooling performance.

[0002] The present application claims the benefit of priority based on Korean Patent Application No. 10-2024-0184397 dated December 12, 2024 and Korean Patent Application No. 10-2025-0195080 dated December 10, 2025, and all contents disclosed in the documents of said Korean patent applications are incorporated herein as part of the specification.

[0003] Radiation emitted by a radioactive isotope can be absorbed through the surface of a pn junction semiconductor and converted into electrical energy. Electron-hole pairs are generated in the space charge region within the pn junction semiconductor by the radiation, and the carriers generated at this time exhibit voltage-current characteristics. Nuclear battery units utilizing these properties have the advantage of being able to stably supply power for a long period, but improvements are required in terms of safety, efficiency, and stability.

[0004] The technical problem that the present invention aims to solve is to provide an isotope battery stack with excellent heat dissipation and cooling performance.

[0005] To achieve the above technical problem, the present invention provides a stack of isotope cells comprising: a plurality of isotope cell units stacked in a first direction; at least one cooling hole penetrating the plurality of isotope cell units; and a refrigerant supply unit capable of supplying a refrigerant to the cooling hole.

[0006] In some embodiments, the cooling hole may include an uneven surface on the side wall.

[0007] In some embodiments, the uneven surface may include a scallop structure.

[0008] In some embodiments, the uneven surface includes a plurality of concave portions arranged in a first direction, and each of the plurality of concave portions may extend along the side wall of the cooling hole in a plane perpendicular to the first direction.

[0009] In some embodiments, the plurality of concave portions may be adjacent to each other with a sharper crest portion between them compared to the bottom portions of the concave portions.

[0010] In some embodiments, each of the isotope cell units may include: a radiation source; a first conductivity semiconductor layer facing the radiation source; and a second conductivity semiconductor layer facing the radiation source with the first conductivity semiconductor layer in between.

[0011] In some embodiments, each of the isotope cell units may further include a photon generating layer between the radiation source and the first conductive semiconductor layer.

[0012] In some embodiments, the first conductivity type semiconductor layer and the second conductivity type semiconductor layer may be extended in a direction perpendicular to the first direction.

[0013] In some embodiments, the cooling hole may penetrate the plurality of isotope cell units in a first direction.

[0014] In some embodiments, the cooling holes may be provided in multiple numbers.

[0015] In some embodiments, at least one radiation source may be disposed between the edge of the isotope cell unit and the cooling hole.

[0016] In some embodiments, the cooling hole is positioned close to at least one edge of the isotope cell unit and may extend along said edge.

[0017] Another aspect of the present invention provides a isotope cell stack comprising a plurality of isotope cell units stacked in a first direction and at least one cooling member provided between two adjacent isotope cell units, wherein the cooling member comprises: a housing; a wick member provided within the housing; and a spacer provided within the housing to secure an internal space of the housing.

[0018] In some embodiments, each of the isotope cell units may include: a radiation source; a first conductivity semiconductor layer facing the radiation source; and a second conductivity semiconductor layer facing the radiation source with the first conductivity semiconductor layer in between.

[0019] In some embodiments, each of the isotope cell units may include: two or more radiation source structures distributed on a plane perpendicular to a first direction; two first conductive semiconductor layers facing the upper and lower surfaces of the radiation source structures, respectively; and two second conductive semiconductor layers facing the upper and lower surfaces of the radiation source structures, respectively, with the first conductive semiconductor layers in between.

[0020] In some embodiments, each of the isotope cell units may further include a photon generating layer between the radiation source and the first conductive semiconductor layer.

[0021] In some embodiments, the cooling member may further include a heat dissipation portion extending outward from the two adjacent isotope cell units.

[0022] The isotope battery laminate according to the embodiments of the present invention has the effect of excellent heat dissipation and cooling performance.

[0023] The effects obtainable from the exemplary embodiments of the present invention are not limited to those mentioned above, and other unmentioned effects can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure belong from the following description. That is, unintended effects resulting from the implementation of the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0024] FIG. 1 is a side cross-sectional view showing an isotope battery stack according to one embodiment of the present invention.

[0025] FIG. 2 is a schematic plan view showing the arrangement of radiation sources of an isotope cell stack according to one embodiment of the present invention.

[0026] FIGS. 3a and FIGS. 3b are each enlarged views of portion A of FIG. 1 according to embodiments of the present invention.

[0027] FIG. 4a is a plan view showing an example in which a cooling hole is positioned close to the edge of an isotope cell unit.

[0028] Figure 4b is a cross-sectional view showing a section cut along the line IVb-IVb' of Figure 4a.

[0029] FIG. 4c is a plan view showing an example in which a cooling hole (120) is placed between radiation sources (111) according to another embodiment of the present invention.

[0030] FIG. 5 is a side cross-sectional view showing an isotope battery stack according to another embodiment of the present invention.

[0031] FIG. 6 is an exploded perspective view schematically showing the cooling member.

[0032] FIG. 7 is a microscopic image showing an exemplary surface shape of the first wick member and the second wick member.

[0033] FIG. 8 is a conceptual diagram showing the circulation of refrigerant in the refrigerant supply unit described with reference to FIG. 1 or the cooling member described with reference to FIG. 5.

[0034] Hereinafter, preferred embodiments of the concept of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the concept of the present invention may be modified in various different forms, and the scope of the concept of the present invention should not be interpreted as being limited by the embodiments described below. It is preferable to interpret the embodiments of the concept of the present invention as being provided to more completely explain the concept of the present invention to those with average knowledge in the art. Identical reference numerals denote identical elements throughout. Furthermore, various elements and areas in the drawings are depicted schematically. Accordingly, the concept of the present invention is not limited by the relative sizes or spacing depicted in the accompanying drawings.

[0035] Terms such as first, second, etc. may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the concept of the present invention, the first component may be named the second component, and conversely, the second component may be named the first component.

[0036] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the concept of the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, expressions such as “comprising” or “having” are intended to indicate the existence of the features, number, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, actions, components, parts, or combinations thereof.

[0037] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those skilled in the art to which the concept of the present invention pertains. Furthermore, it will be understood that commonly used terms, such as those defined in advance, should be interpreted as having meanings consistent with their intent in the context of the relevant technology, and should not be interpreted in an overly formal sense unless explicitly defined herein.

[0038] Where an embodiment can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order of the description.

[0039] In the accompanying drawings, variations of the depicted shapes may be expected, for example, depending on manufacturing technology and / or tolerances. Accordingly, embodiments of the present invention should not be interpreted as being limited to specific shapes of the areas depicted herein, but should include, for example, variations in shape resulting from the manufacturing process. All terms "and / or" used herein include each of the mentioned components and all combinations of one or more thereof. Additionally, the term "substrate" as used herein may refer to the substrate itself, or a laminated structure including the substrate and a certain layer or film formed on its surface. Furthermore, the term "surface of the substrate" in this specification may refer to the exposed surface of the substrate itself, or the outer surface of a certain layer or film formed on the substrate.

[0040]

[0041] (1st embodiment)

[0042] FIG. 1 is a side cross-sectional view showing an isotope battery stack (100) according to one embodiment of the present invention. FIG. 2 is a schematic plan view showing the arrangement of a radiation source (111) of an isotope battery stack (100) according to one embodiment of the present invention.

[0043] Referring to FIGS. 1 and 2, the isotope cell stack (100) may include a plurality of isotope cell units (110-1, 110-2, ..., 110-N) stacked in a first direction (e.g., x-axis direction). Each of the plurality of isotope cell units (110-1, 110-2, ..., 110-N) may include a radiation source (111), a first conductivity type semiconductor layer (113a, 113b), and a second conductivity type semiconductor layer (115a, 115b).

[0044] In some embodiments, the radiation source (111) may include a radioactive isotope that emits beta rays. For example, the radiation source (111) may be tritium ( 3H, tritium), calcium-45( 45 Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), thallium-204( 204 Tl), tantalum-182( 182 Ta), cadmium-115( 115 Cd), cadmium-113( 113 Cd), germanium-75( 75 Ge), cerium-141( 141 Ce), cerium-144( 144 Ce) and tungsten-185( 185 It may include one or more selected from the group consisting of W). However, the present invention is not limited to these.

[0045] In some embodiments, the radiation source (111) may include a radioactive isotope that emits alpha rays. For example, the radiation source (111) may be americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249(249 Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 252 Cf), and berkelium-249( 249 It may include one or more selected from the group consisting of Bk). However, the present invention is not limited to these.

[0046] The above radiation source (111) can be formed by any method known to a person skilled in the art. For example, the above radiation source (111) can be formed by various methods such as plating, vapor deposition, and atomic layer deposition (ALD).

[0047] In some embodiments, the radiation source (111) may be formed by plating. When the radiation source (111) is formed by plating, the radiation source (111) may be formed by performing electroplating after forming a seed layer. Optionally, the radiation source (111) may be formed by electroless plating.

[0048] In some embodiments, a first conductive semiconductor layer (113a, 113b) may be provided facing the radiation source (111). In some embodiments, the first conductive semiconductor layer may be provided only on one side of the radiation source (111). In other embodiments, the first conductive semiconductor layer (113a, 113b) may be provided on the upper and lower sides of the radiation source (111).

[0049] In some embodiments, a second conductive semiconductor layer (115a, 115b) may be provided to face the radiation source (111) with the first conductive semiconductor layer (113a, 113b) in between. In some embodiments, the second conductive semiconductor layer (115a, 115b) may be provided on the upper and lower sides of the radiation source (111).

[0050] In some embodiments, the first conductivity type semiconductor layer (113a, 113b) may be doped with first conductivity type dopants within the substrate.

[0051] The above description may include, for example, a III-V semiconductor material. The III-V semiconductor material may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, AlAsP, or yttria-stabilized zirconia (YSZ).

[0052] In some embodiments, the substrate may comprise a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be undoped substrates.

[0053] In some other embodiments, the substrate may comprise a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be substrates doped with a dopant.

[0054] In some other embodiments, the description may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0055] Specifically, the above description includes BaSnO3, BaHfO3, BaZrO3, and BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x It may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0056] In some embodiments, the substrate may include an insulating substrate. In some embodiments, the substrate may include a semiconductor substrate.

[0057] In some embodiments, the first conductivity type semiconductor layer (113a, 113b) may comprise a metal oxide having a bandgap energy of 2.7 eV or more. In some embodiments, the metal oxide may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0058] Specifically, the metal oxides are BaSnO3, BaHfO3, BaZrO3, and BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x It may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0059] The above metal oxide is not only stable even in high temperature and high humidity environments, but also has high carrier mobility, so it can efficiently absorb radiation emitted from a radiation source (111) and provide high energy conversion efficiency. In addition, there are no inelastic collisions during carrier movement, so there is no energy loss and it is advantageous for heat dissipation. For example, the above metal oxide is 45 cm 2 / (V·s) or more, 80 cm 2 / (V·s) or more, 120 cm 2 / (V·s) or more, furthermore 300 cm 2It can have a high carrier mobility of / (V·s) or higher.

[0060] These metal oxides are bidirectional doping materials and have the advantage of being able to provide high current or high voltage depending on the direction of the applied bias.

[0061] In some embodiments, the second conductivity type semiconductor layer (115a, 115b) may be doped with second conductivity type dopants within the substrate.

[0062] The substrate of the second conductivity type semiconductor layer (115a, 115b) may be the same as the substrate described in relation to the first conductivity type semiconductor layer (113a, 113b). In some embodiments, the substrate of the second conductivity type semiconductor layer (115a, 115b) may be the same as the substrate of the first conductivity type semiconductor layer (113a, 113b). In other embodiments, the substrate of the second conductivity type semiconductor layer (115a, 115b) may be different from the substrate of the first conductivity type semiconductor layer (113a, 113b).

[0063] In some embodiments, the first conductivity type semiconductor layer (113a, 113b) may be doped with a dopant of the first conductivity type. The second conductivity type semiconductor layer (115a, 115b) may be doped with a dopant of the second conductivity type. The first conductivity type semiconductor layer (113a, 113b) and the second conductivity type semiconductor layer (115a, 115b) may generate electron-hole pairs by radiation emitted from the radiation source (111).

[0064] In some embodiments, the first conductivity type dopant may be an n-type dopant and the second conductivity type dopant may be a p-type dopant. In other embodiments, the first conductivity type dopant may be a p-type dopant and the second conductivity type dopant may be an n-type dopant. A person skilled in the art will understand that, depending on the conductivity type of the dopant doped in each region, one of the first conductivity type semiconductor layer (113a, 113b) and the second conductivity type semiconductor layer (115a, 115b) may operate as a cathode and the other as an anode. That is, if the first conductivity type dopant is an n-type dopant and the second conductivity type dopant is a p-type dopant, the first conductivity type semiconductor layer (113a, 113b) may act as an anode and the second conductivity type semiconductor layer (115a, 115b) may act as a cathode. Conversely, if the first conductivity type dopant is a p-type dopant and the second conductivity type dopant is an n-type dopant, the first conductivity type semiconductor layer (113a, 113b) can act as a cathode and the second conductivity type semiconductor layer (115a, 115b) can act as an anode.

[0065] The region doped with the above n-type dopant may be a semiconductor region doped with, for example, nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table, or a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are Group 15 elements of the periodic table. In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN).

[0066] The region doped with the above p-type dopant may be a semiconductor region doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0067] In some embodiments, the first conductivity semiconductor layer (113a, 113b) and / or the second conductivity semiconductor layer (115a, 115b) may include an organic material used in an organic layer that receives light and generates power in the field of solar cells, etc. For example, the first conductivity semiconductor layer (113a, 113b) and / or the second conductivity semiconductor layer (115a, 115b) may include a thiophene-type compound. Meanwhile, the first conductivity semiconductor layer (113a, 113b) and / or the second conductivity semiconductor layer (115a, 115b) may be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic material and organic material.

[0068] In some embodiments, a depletion region may be formed near the interface where the first conductivity type semiconductor layer (113a, 113b) and the second conductivity type semiconductor layer (115a, 115b) come into contact with each other.

[0069] In some embodiments, the first conductivity semiconductor layer (113a, 113b) and the second conductivity semiconductor layer (115a, 115b) may be extended in a direction perpendicular to the first direction (e.g., the x-axis direction). In some embodiments, the first conductivity semiconductor layer (113a, 113b) and the second conductivity semiconductor layer (115a, 115b) may be in the form of a flat plate extending in a direction perpendicular to the first direction (e.g., the x-axis direction).

[0070] Specifically, the radiation source (111) may include radiation source structures (111s) distributed in a direction perpendicular to a first direction (e.g., x-axis direction). The radiation source structures (111s) may have a point shape as shown in FIG. 2 and may be distributed spaced apart in a second direction (e.g., y-axis direction) and a third direction (e.g., z-axis direction). However, the present invention is not limited thereto. In some embodiments, the radiation source structures (111s) may have the form of straight lines that are spaced apart in a third direction (e.g., z-axis direction) or a second direction (e.g., y-axis direction) while extending in a second direction (e.g., y-axis direction) or a third direction (e.g., z-axis direction). In some embodiments, the radiation source structures (111s) may have the form of lines spaced apart in the third direction (e.g., z-axis direction) or the second direction (e.g., y-axis direction) while extending in a zigzag shape toward the second direction (e.g., y-axis direction).

[0071] The lower surface of the radiation source structures (111s) may face the lower first conductive semiconductor layer (113a). The upper surface of the radiation source structures (111s) may face the upper first conductive semiconductor layer (113b). The lower surface of the radiation source structures (111s) may face the lower second conductive semiconductor layer (115a) with the lower first conductive semiconductor layer (113a) in between. The upper surface of the radiation source structures (111s) may face the upper second conductive semiconductor layer (115b) with the upper first conductive semiconductor layer (113b) in between.

[0072] In some embodiments, each of the isotope cell units (110-1, 110-2, ..., 110-N) may further include a photon generating layer (112a, 112b). The photon generating layer (112a, 112b) may be any layer of material capable of emitting photons in response to radiation particles emitted from the radiation source (111).

[0073] For example, the photon generating layer (112a, 112b) may employ materials such as Ba2Ca(BO3)2, BaHfO3, BaI2:Ce, BeO, BaF2, BaMgF4, Cs2LiLuCi6:Ce, K2YF5, KCaF3, YI3:Ce, but is not limited to these. Various examples of the photon generating layer (112a, 112b) are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / . If the radiation source (111) is a species that emits beta rays, the photon generating layer (112a, 112b) may be omitted.

[0074] In some embodiments, a lower photon generating layer (112a) may be disposed on the lower surface of the radiation source structures (111s), and an upper photon generating layer (112b) may be disposed on the upper surface of the radiation source structures (111s). In some embodiments, the radiation source structures (111s) may be surrounded by photon generating layers (112a, 112b).

[0075]

[0076] The above isotope cell stack (100) may include at least one cooling hole (120) penetrating the plurality of isotope cell units (110-1, 110-2, . . . , 110-N).

[0077] FIGS. 3a and FIGS. 3b are each enlarged views of portion A of FIG. 1 according to embodiments of the present invention.

[0078] Referring to FIG. 3a, the cooling hole (120) may include an uneven portion (122) on the side wall. The uneven portion (122) may include a concave portion and a convex portion that are continuous on the side wall.

[0079] In some embodiments, the uneven portion (122) may include a scallop structure. In some embodiments, the uneven portion (122) may be formed by deep reactive ion etching (DRIE). In some embodiments, the uneven portion (122) may be formed by a Bosch process. In some embodiments, the uneven portion (122) may include a plurality of concave portions (120r) arranged in a first direction (e.g., x-axis direction). Each of the plurality of concave portions (120r) may extend along the sidewall of the cooling hole (120) on a plane perpendicular to the first direction (e.g., yz plane). That is, each of the plurality of concave portions (120r) may have a ring shape while extending horizontally along the sidewall of the cooling hole (120).

[0080] In some embodiments, the plurality of concave portions (120r) may be adjacent to each other with a crest portion (120p) in between. In some embodiments, the crest portion (120p) may have a relatively sharp vertex. Specifically, the crest portion (120p) may have a sharper cross-sectional shape compared to the bottom portion of the concave portions (120r). As seen in FIG. 3a, the bottom portion of the concave portions (120r) has a smooth, rounded shape, whereas the crest portion (120p) may have a relatively sharper shape compared to the bottom portion. However, the crest portion (120p) does not necessarily have to be pointed and may have a sharper shape compared to the bottom portion of the concave portions (120r). In some other embodiments, the crest portion (120p) may have a pointed cross-section.

[0081] In another embodiment, the cooling hole (120) may have smooth sidewalls. Referring to FIG. 3b, the cooling hole (120) may have smooth sidewalls without concave or crest portions. In this case, the cross-section of the cooling hole (120) cut in a first direction (e.g., x-axis direction) may have a substantially straight shape. In some embodiments, the horizontal dimension of the cooling hole (120) (i.e., the direction perpendicular to the first direction) may increase monotonically in the first direction (e.g., x-axis direction). In some other embodiments, the horizontal dimension of the cooling hole (120) (i.e., the direction perpendicular to the first direction) may decrease monotonically in the first direction (e.g., x-axis direction).

[0082] As illustrated in FIG. 2, the isotope cell stack (100) may include a plurality of cooling holes (120). The plurality of cooling holes (120) may be appropriately distributed considering the cooling efficiency when viewed from a plane in a first direction (e.g., the x-axis direction).

[0083] The location of the cooling hole (120) can be determined such that at least one radiation source (111) is positioned between the edge (E) of the isotope cell unit (110) and the cooling hole (120). Efficient cooling is possible because the heat generated around the radiation source (111) can be partially emitted through the edge (E) of the isotope cell unit (110) and the remainder can be discharged through the cooling hole (120).

[0084] In some embodiments, the cooling hole (120) may be positioned close to the edge (E) of the isotope cell unit (110) and may extend along the edge (E). FIG. 4a is a plan view showing an example in which the cooling hole (120) is positioned close to the edge (E) of the isotope cell unit (110). FIG. 4b is a cross-sectional view showing a section cut along the line IVb-IVb' of FIG. 4a.

[0085] Referring to FIGS. 4a and 4b, the cooling hole (120) is positioned between the edge (E) of the isotope cell unit (110) and the outermost radiation source (111), and may extend along the edge (E) in a second direction (e.g., y-axis direction) and / or a third direction (e.g., z-axis direction). That is, the cooling hole (120) penetrates the plurality of isotope cell units (110-1, 110-2, ..., 110-N) in the vertical direction and may extend along the edge (E) in the horizontal direction in a second direction (e.g., y-axis direction) and / or a third direction (e.g., z-axis direction).

[0086] Since the cooling hole (120) is filled with at least a portion of a refrigerant, the leakage of radiation from the radiation source (111) to the outside can be shielded. Furthermore, the vapor of the refrigerant is filled inside the cooling hole (120), and the vapor of the refrigerant filled inside the cooling hole (120) also has a certain degree of radiation shielding effect.

[0087] FIG. 4c is a plan view showing an example in which a cooling hole (120) is placed between radiation sources (111) according to another embodiment of the present invention.

[0088] Referring to FIG. 4c, the cooling hole (120) may extend along a second direction (e.g., y-axis direction) and / or a third direction (e.g., z-axis direction) between the radiation sources (111). Specifically, the cooling hole (120) may penetrate the plurality of isotope cell units (110-1, 110-2, ..., 110-N) in the vertical direction and extend along a second direction (e.g., y-axis direction) and / or a third direction (e.g., z-axis direction) between the radiation sources (111) in the horizontal direction.

[0089] Since the cooling hole (120) is not only positioned between the radiation sources (111) but also has a shape that extends linearly in the horizontal direction, heat generated near the radiation sources (111) can be efficiently released.

[0090] Referring to FIGS. 1 to 4c, the isotope cell stack (100) further includes a refrigerant supply unit (130) capable of supplying a refrigerant (132) to a cooling hole (120).

[0091] The above refrigerant supply unit (130) may be configured to supply a refrigerant (132) into a cooling hole (120) that penetrates the plurality of isotope cell units (110-1, 110-2, ..., 110-N). In some embodiments, the refrigerant (132) may rise to a predetermined height by capillary action within the cooling hole (120). That is, the refrigerant (132) may rise to a predetermined height by the surface tension it has within the cooling hole (120).

[0092] Furthermore, the refrigerant (132) may be vaporized within the cooling hole (120). In some embodiments, the refrigerant (132) may absorb heat from the wall of the cooling hole (120) and vaporize due to the absorbed heat. The refrigerant (132) may be vaporized within the cooling hole (120) until it reaches the saturated vapor pressure of the refrigerant (132), and the wall of the cooling hole (120) may be cooled by the vaporization of the refrigerant (132). That is, the wall of the cooling hole (120) may be cooled by the heat of vaporization of the refrigerant (132).

[0093] The vaporized refrigerant (132) can be condensed at the top where the temperature is relatively low. The refrigerant (132) condensed into liquid can flow down and be collected at the refrigerant supply unit (130).

[0094] The refrigerant supply unit (130) may have any shape and structure capable of supplying refrigerant (132) to the cooling hole (120). In some embodiments, the refrigerant supply unit (130) may at least partially enclose the isotope cell units. In some embodiments, the refrigerant (132) may include a liquid with a relatively low boiling point, such as water, alcohol, or ammonia, but the invention is not limited thereto.

[0095] The above-described isotope battery stack (100) may include a first electrode (105a) and a second electrode (105b) capable of transmitting generated electrical energy to the outside. The type, size, and shape thereof of the first electrode (105a) and the second electrode (105b) are not particularly limited as long as they possess electrical conductivity without causing physical and chemical changes in the isotope battery stack (100). For example, the first electrode (105a) and the second electrode (105b) may be cylindrical, tetrahedral, hexahedral, torus-shaped, or pad-shaped. In some embodiments, the first electrode (105a) and the second electrode (105b) may each independently include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium oxide (ITO, In2O3), or include a carbon-based compound such as a carbon nanotube, graphene, or graphene oxide.

[0096] The isotope cell laminate (100) illustrated in FIG. 1 can be obtained by manufacturing individual isotope cell units (110-1, 110-2, ..., 110-N) and then stacking them. When individual isotope cell units (110-1, 110-2, ..., 110-N) are manufactured and then stacked, only defective isotope cell units (110-1, 110-2, ..., 110-N) can be selected and excluded from the stacking process, thereby increasing the manufacturing yield of the isotope cell laminate (100) and reducing manufacturing costs.

[0097]

[0098] (2nd Example)

[0099] FIG. 5 is a side cross-sectional view showing an isotope battery stack (100a) according to another embodiment of the present invention.

[0100] Referring to FIG. 5, the isotope cell stack (100b) may include a plurality of isotope cell units (110-1, 110-2, ..., 110-N) stacked in a first direction (e.g., x-axis direction), and at least one cooling member (150) provided between two adjacent isotope cell units (110-1, 110-2, ..., 110-N).

[0101] The above plurality of isotope cell units (110-1, 110-2, . . . , 110-N) have been described with reference to FIGS. 1 to 4c, so a detailed description is omitted here.

[0102] FIG. 6 is an exploded perspective view schematically showing the cooling member (150). Referring to FIG. 6, the cooling member (150) includes a housing (151a, 151b), a wick member (153a, 153b) provided within the housing (151a, 151b), and a spacer (155) provided within the housing (151a, 151b) to secure an internal space of the housing (151a, 151b).

[0103] The above housing (151a, 151b) may include a first housing (151a) located at the bottom and a second housing (151b) located at the top.

[0104] The first housing (151a) and the second housing (151b) may be made of a material having high thermal conductivity, such as copper, SUS, aluminum, etc. In some embodiments, the first housing (151a) and the second housing (151b) may define a space capable of accommodating wick members (153a, 153b). To this end, the first housing (151a) and the second housing (151b) may have corresponding shapes and structures.

[0105] A wick member (153a, 153b) is disposed within the housing (151a, 151b). Although FIG. 5 is illustrated as providing two wick members (153a, 153b) within the housing (151a, 151b), the present invention is not limited thereto.

[0106] In some embodiments, the wick members (153a, 153b) may include a first wick member (153a) located at the bottom and a second wick member (153b) located at the top. In some embodiments, the first wick member (153a) and the second wick member (153b) may have a shape that overlaps each other.

[0107] FIG. 7 is a microscopic image showing an exemplary surface shape of the first wick member (153a) and the second wick member (153b).

[0108] Referring to FIG. 7, the first wick member (153a) and the second wick member (153b) may each independently have a mesh shape (Fig. 7(a)) or a sintered shape with fine particles randomly distributed (Fig. 7(b)). The first wick member (153a) and the second wick member (153b) may each independently include aluminum nitride, titanium, copper, aluminum, or a mixture thereof.

[0109] The spacer (155) may be positioned between the first housing (151a) and the second housing (151b) to secure a space between them. In some embodiments, the spacer (155) may be formed integrally with the first housing (151a) or the second housing (151b).

[0110] A refrigerant may be further provided inside the housing (151a, 151b). The refrigerant may include a liquid with a relatively low boiling point, such as water, alcohol, or ammonia.

[0111] FIG. 8 is a conceptual diagram showing the circulation of refrigerant in the refrigerant supply unit (130) described with reference to FIG. 1 or the cooling member (150) described with reference to FIG. 5.

[0112] Referring to FIG. 8, the refrigerant in the refrigerant supply unit (130) or cooling member (150) cools the isotope cell units (110-1, 110-2, ..., 110-N) and then its temperature rises. The refrigerant with the raised temperature can be cooled in the heat dissipation unit (140) and then circulated to the refrigerant supply unit (130) or cooling member (150).

[0113] In the embodiment described with reference to FIG. 1, the refrigerant (132) of the refrigerant supply unit (130) can be vaporized and then condensed into a liquid at a relatively low temperature within the cooling hole (120). Apart from this cooling process, the refrigerant (132) can be cooled in a separate heat dissipation unit (140).

[0114] In the embodiment described with reference to FIG. 5, the refrigerant of the cooling member (150) may condense into a liquid at a relatively low temperature location within the housing (153a, 153b). Apart from this cooling process, the refrigerant may be cooled in a separate heat dissipation unit (140).

[0115] In some embodiments, the heat dissipation unit (140) may include a fin cooling device. In some embodiments, the heat dissipation unit (140) may include a cooling fan. In some embodiments, the heat dissipation unit (140) may include a shell and tube heat exchanger. In some embodiments, the heat dissipation unit (140) may include a heat conduction unit capable of releasing heat through heat conduction.

[0116] In some embodiments, a transfer device (P) capable of forcibly transferring the refrigerant to promote the circulation of the refrigerant may be further provided.

[0117] As described above, although embodiments of the present invention have been described in detail, a person skilled in the art to which the present invention pertains will be able to modify and implement the present invention in various ways without departing from the spirit and scope of the present invention as defined in the appended claims. Therefore, future modifications to the embodiments of the present invention will not depart from the technology of the present invention.

[0118]

[0119] [Explanation of the symbol]

[0120] 100, 100a: Isotope cell stack

[0121] 105a: First electrode

[0122] 105b: Second electrode

[0123] 110, 110-1, 110-2, 110-N: Isotope cell units

[0124] 111: Radiation source

[0125] 112a, 112b: Photon generation layer

[0126] 113a, 113b: First conductivity type semiconductor layer

[0127] 115a, 115b: Second conductivity type semiconductor layer

[0128] 120: Cooling hole

[0129] 120r: ​​Concave part

[0130] 120p: Marubu

[0131] 122: Uneven parts

[0132] 130: Refrigerant supply unit

[0133] 132: Refrigerant

[0134] 140: Heat dissipation section

[0135] 150: Cooling element

[0136] 151a, 151b: Housing

[0137] 153a, 153b: Wick absence

[0138] 155: Spacer

Claims

1. Multiple isotope cell units stacked in a first direction; At least one cooling hole penetrating the plurality of isotope cell units; and A refrigerant supply unit capable of supplying refrigerant to the above cooling hole; Isotope cell stack including 2. In Paragraph 1, The above-mentioned cooling hole is characterized by including an uneven surface on the side wall of the isotope cell stack.

3. In Paragraph 2, An isotope cell stack characterized by the above-mentioned uneven portion including a scallop structure.

4. In Paragraph 2, The above-mentioned uneven portion includes a plurality of concave portions arranged in a first direction, and An isotope cell stack characterized in that each of the plurality of concave portions extends along the side wall of the cooling hole in a plane perpendicular to the first direction.

5. In Paragraph 4, An isotope cell stack characterized in that the plurality of concave portions are adjacent to each other with a sharper crest portion between them compared to the bottom portions of the concave portions.

6. In Paragraph 4, Each of the above-mentioned isotope cell units is: Radiation source; A first conductive semiconductor layer facing the above radiation source; and A second conductivity type semiconductor layer facing the radiation source with the first conductivity type semiconductor layer in between; An isotope battery stack characterized by including 7. In Paragraph 6, An isotope battery stack characterized in that each of the above isotope battery units further comprises a photon generating layer between the radiation source and the first conductivity type semiconductor layer.

8. In Paragraph 6, An isotope cell stack characterized in that the first conductivity type semiconductor layer and the second conductivity type semiconductor layer extend in a direction perpendicular to the first direction.

9. In Paragraph 1, An isotope cell stack characterized in that the cooling hole penetrates the plurality of isotope cell units in a first direction.

10. In Paragraph 9, An isotope cell stack characterized by having multiple cooling holes.

11. In Paragraph 9, An isotope cell stack characterized by having at least one radiation source disposed between the edge of the isotope cell unit and the cooling hole.

12. In Paragraph 9, An isotope cell stack characterized in that the cooling hole is positioned in close proximity to at least one edge of the isotope cell unit and extends along the edge.

13. A plurality of isotope cell units stacked in a first direction; and At least one cooling member provided between two adjacent isotope cell units; Includes, The above cooling member is: Housing; A wick member provided within the above housing; and A spacer provided within the above housing and for securing the internal space of the above housing; Isotope cell stack including 14. In Paragraph 13, Each of the above-mentioned isotope cell units is: Radiation source; A first conductive semiconductor layer facing the above radiation source; and A second conductivity type semiconductor layer facing the radiation source with the first conductivity type semiconductor layer in between; An isotope battery stack characterized by including 15. In Paragraph 14, Each of the above-mentioned isotope cell units is: Two or more radiation source structures distributed on a plane perpendicular to the first direction; Two first conductive semiconductor layers facing the upper and lower surfaces, respectively, of the radiation source structure; and Two second conductivity semiconductor layers facing the upper and lower surfaces of the radiation source structure, respectively, with the first conductivity semiconductor layers in between; An isotope battery stack characterized by including 16. In Paragraph 15, An isotope battery stack characterized in that each of the above isotope battery units further comprises a photon generating layer between the radiation source and the first conductivity type semiconductor layer.

17. In Paragraph 13, The isotope cell stack is characterized in that the cooling member further includes a heat dissipation portion extending outwardly from the two adjacent isotope cell units.

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